WO2015098838A1 - Method for producing semiconductor device, and thermosetting resin sheet - Google Patents

Method for producing semiconductor device, and thermosetting resin sheet Download PDF

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Publication number
WO2015098838A1
WO2015098838A1 PCT/JP2014/083910 JP2014083910W WO2015098838A1 WO 2015098838 A1 WO2015098838 A1 WO 2015098838A1 JP 2014083910 W JP2014083910 W JP 2014083910W WO 2015098838 A1 WO2015098838 A1 WO 2015098838A1
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WO
WIPO (PCT)
Prior art keywords
thermosetting resin
resin sheet
substrate
chip
semiconductor device
Prior art date
Application number
PCT/JP2014/083910
Other languages
French (fr)
Japanese (ja)
Inventor
浩介 盛田
石坂　剛
石井　淳
豪士 志賀
智絵 飯野
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013270095A external-priority patent/JP2015126124A/en
Priority claimed from JP2014098068A external-priority patent/JP2015216229A/en
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to CN201480070680.2A priority Critical patent/CN105849879A/en
Priority to KR1020167018601A priority patent/KR20160101962A/en
Publication of WO2015098838A1 publication Critical patent/WO2015098838A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device and a thermosetting resin sheet.
  • Patent Document 1 discloses that a substrate on which a semiconductor chip is mounted by a flip-chip connection method is placed in a cavity of a mold, and then a molten epoxy resin composition is formed in the cavity.
  • a technique is described in which a gap under a chip and a whole chip are sealed together by injecting an object at a predetermined pressure.
  • a technique for collectively filling the gap under the chip and sealing the whole chip is sometimes called mold underfill.
  • This invention solves the said subject and aims at providing the manufacturing method and thermosetting resin sheet of a semiconductor device which can manufacture a semiconductor device with few voids.
  • the present invention provides a substrate and a semiconductor chip while covering the semiconductor chip with the thermosetting resin sheet by pressurizing under heating a chip mounting substrate and a laminate including the thermosetting resin sheet disposed on the chip mounting substrate.
  • the present invention relates to a method of manufacturing a semiconductor device including a step of filling a gap with a thermosetting resin sheet.
  • the chip mounting substrate includes a substrate and a semiconductor chip flip-chip mounted on the substrate.
  • the chip mounting substrate preferably includes a plurality of semiconductor chips.
  • the method for manufacturing a semiconductor device of the present invention includes a step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet by pressurizing the laminate under heating. It is not particularly limited as long as it is included.
  • the sealing body obtained by the step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet is heated.
  • the method for manufacturing a semiconductor device of the present invention includes, for example, a step of forming a cured body by heating a sealing body, a step of forming a rewiring body by forming a rewiring layer on the cured body, and a rewiring body A step of obtaining a semiconductor device by dicing can be further included.
  • thermosetting resin sheet In the step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet, it is preferable to pressurize the laminate under heating using a compression mold. . That is, it is preferable to pressurize the laminate disposed inside the mold for compression molding under heating.
  • the substrate is not particularly limited, and examples thereof include an organic substrate, a semiconductor wafer substrate, and a glass substrate.
  • An example of the semiconductor wafer substrate is a silicon wafer substrate.
  • the area of the substrate is preferably 10,000 mm 2 or more. In the present invention, even when a substrate with a large area of 10,000 mm 2 or more is employed, a semiconductor device with few voids can be manufactured.
  • the upper limit of the area of the substrate is not particularly limited, for example, 200000 mm 2.
  • the shape of the substrate is not particularly limited.
  • Examples of the shape of the substrate include a polygonal shape, a substantially polygonal shape, a circular shape, and a substantially circular shape.
  • the shape of the substrate is a shape when the substrate is viewed in plan.
  • Examples of the polygonal shape include a rectangular shape and a square shape.
  • the substantially polygonal shape includes a polygon-like shape having at least some rounded corners, a polygon-like shape having at least a part of a side or a part of the side being a curve, and the like.
  • Examples of the substantially polygonal shape include a substantially rectangular shape and a substantially square shape.
  • the length of at least one side of the polygonal substrate or the substantially polygonal substrate is preferably 100 mm or more.
  • the area of the polygonal substrate or the substantially polygonal substrate is preferably 10,000 mm 2 or more.
  • the substantially circular shape has an elliptical shape, a circular similar shape in which an uneven portion is formed on at least a part of the circumference, and a linear part (hereinafter, the linear part is also referred to as a linear part) on at least a part of the circumference.
  • a linear part hereinafter, the linear part is also referred to as a linear part
  • the circular substrate or the substantially circular substrate preferably has a diameter or a short diameter of 150 mm or more.
  • the minimum melt viscosity at 50 to 150 ° C. of the thermosetting resin sheet is preferably 10 Pa ⁇ S to 5000 Pa ⁇ S. Generation
  • production of the void by outgas can be suppressed as it is 10 Pa * S or more.
  • a thermosetting resin sheet can be made to follow a semiconductor chip as it is 5000 Pa * S or less. Further, the gap between the substrate and the semiconductor chip can be easily filled with the thermosetting resin sheet.
  • the thermosetting resin sheet preferably contains an inorganic filler.
  • the content of the inorganic filler in the thermosetting resin sheet is preferably 70% by weight to 90% by weight. When it is 70% by weight or more, the thermal expansion coefficient of the cured product of the thermosetting resin sheet can be reduced, and the heat cycle reliability of the semiconductor device can be improved. When it is 90% by weight or less, the fluidity of the thermosetting resin sheet can be improved, and the thermosetting resin sheet can follow the semiconductor chip. In addition, the gap between the substrate and the semiconductor chip can be satisfactorily filled.
  • the maximum particle size of the inorganic filler is 30 ⁇ m or less.
  • the thickness is 30 ⁇ m or less, the gap between the substrate and the semiconductor chip can be satisfactorily filled.
  • the thermosetting resin sheet preferably contains an epoxy resin.
  • the epoxy resin contains a bisphenol A type epoxy resin, and the content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is preferably 20% by weight to 70% by weight. Since it is excellent in the flexibility of a thermosetting resin sheet as it is 20 weight% or more, handling is easy. When it is 70% by weight or less, the Tg of the cured product of the thermosetting resin sheet can be increased, and the heat cycle reliability can be improved.
  • thermosetting resin sheet preferably contains a phenol novolac type curing agent and a curing accelerator.
  • the present invention also provides a method for manufacturing a semiconductor device including a step of filling a gap between a substrate and a semiconductor chip with a thermosetting resin sheet while covering the semiconductor chip with a thermosetting resin sheet by pressurizing the laminate under heating.
  • the present invention relates to a thermosetting resin sheet for use in the method.
  • the thermosetting resin sheet preferably has a minimum melt viscosity of 10 Pa ⁇ S to 5000 Pa ⁇ S at 50 ° C. to 150 ° C.
  • a semiconductor device with few voids can be manufactured.
  • a compression mold 200 includes a lower mold 2001 and an upper mold 2002.
  • the upper mold 2002 is provided on the outer periphery of the middle part 2002a and the middle part 2002a and includes an outer circumferential part 2002b extending in the thickness direction of the middle part 2002a.
  • the lower mold 2001 and the upper mold 2002 are heated in advance.
  • the temperature of the lower mold 2001 and the upper mold 2002 is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, and further preferably 85 ° C. or higher. It can be hardened after making the thermosetting resin sheet 12 flow as it is 70 degreeC or more.
  • the temperature of the lower mold 2001 and the upper mold 2002 is preferably 200 ° C. or lower, more preferably 180 ° C. or lower, and further preferably 170 ° C. or lower.
  • the laminate 201 is placed on the lower mold 2001.
  • the laminate 201 includes a chip mounting substrate 11 and a thermosetting resin sheet 12 disposed on the chip mounting substrate 11.
  • the chip mounting substrate 11 includes a substrate 11a and a semiconductor chip 11b flip-chip mounted on the substrate 11a.
  • the semiconductor chip 11b and the substrate 11a are electrically connected via bumps 11c.
  • the laminate 201 is heated under pressure and the semiconductor chip 11b is covered with the thermosetting resin sheet 12, while the gap between the substrate 11a and the semiconductor chip 11b is heated.
  • the curable resin sheet 12 is filled. Thereby, the sealing body 2 is obtained.
  • the cavity internal pressure is preferably 0.5 MPa or more, more preferably 1 MPa or more. If it is 0.5 MPa or more, the voids entrained during filling can be crushed.
  • the pressure in the cavity is preferably 10 MPa or less, more preferably 8 MPa or less. When the pressure is 10 MPa or less, damage to the semiconductor chip 11b can be suppressed, and high reliability can be ensured.
  • the sealing body 2 includes a chip mounting substrate 11 and a resin layer 21 disposed on the chip mounting substrate 11.
  • the resin layer 21 includes an underfill portion 21a sandwiched between the substrate 11a and the semiconductor chip 11b, and a sealing portion 21b disposed around the underfill portion 21a.
  • the semiconductor chip 11b is covered with a sealing portion 21b.
  • the resin layer 21 is cured and the cured body 3 is obtained.
  • the temperature and holding time for holding the sealing body 2 can be set as appropriate.
  • the cured body 3 includes a chip mounting substrate 11 and a cured layer 31 disposed on the chip mounting substrate 11.
  • the hardened layer 31 includes a connection protection part 31a sandwiched between the substrate 11a and the semiconductor chip 11b, and a chip protection part 31b disposed around the connection protection part 31a.
  • the semiconductor chip 11b is covered with a chip protection part 31b.
  • bumps 32 are provided on the substrate 11a.
  • the cured body 3 is separated (diced) to obtain the semiconductor device 4.
  • thermosetting resin sheet 12 The thermosetting resin sheet 12 will be described.
  • the minimum melt viscosity at 50 ° C. to 150 ° C. of the thermosetting resin sheet 12 is preferably 10 Pa ⁇ S or more, more preferably 15 Pa ⁇ S or more. Generation
  • the minimum melt viscosity at 50 ° C. to 150 ° C. of the thermosetting resin sheet 12 is preferably 5000 Pa ⁇ S or less, more preferably 4500 Pa ⁇ S or less. When it is 5000 Pa ⁇ S or less, the thermosetting resin sheet 12 can follow the semiconductor chip 11 b. Moreover, the thermosetting resin sheet 12 can be easily filled in the gap between the substrate 11a and the semiconductor chip 11b.
  • the minimum melt viscosity can be measured by the method described in Examples.
  • the minimum melt viscosity of the thermosetting resin sheet 12 can be controlled by the content of the inorganic filler, the average particle diameter of the inorganic filler, and the like.
  • the minimum melt viscosity can be reduced by reducing the amount of inorganic filler and using an inorganic filler having a large average particle diameter.
  • the thermosetting resin sheet 12 preferably contains a thermosetting resin.
  • a thermosetting resin an epoxy resin, a phenol resin, etc. can be used conveniently, for example.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • bisphenol A type epoxy resin is preferable because it can provide flexibility, and liquid at 23 ° C. is more preferable.
  • the epoxy equivalent of the bisphenol A type epoxy resin is preferably 150 g / eq to 250 g / eq.
  • a bisphenol F type epoxy resin together with a bisphenol A type epoxy resin because the viscosity can be lowered.
  • the softening point of the bisphenol F type epoxy resin is preferably 50 ° C. or higher. When it is 50 ° C. or higher, handling properties at room temperature can be improved.
  • the softening point of the bisphenol F type epoxy resin is preferably 100 ° C. or lower. Melt viscosity can be reduced as it is 100 degrees C or less.
  • the epoxy equivalent of the bisphenol F type epoxy resin is preferably 150 g / eq to 250 g / eq.
  • the content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is preferably 20% by weight or more, more preferably 25% by weight or more. Since it is excellent in the flexibility of the thermosetting resin sheet 12 as it is 20 weight% or more, handling is easy.
  • the content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is preferably 70% by weight or less, more preferably 65% by weight or less. When it is 70% by weight or less, the Tg of the cured product of the thermosetting resin sheet 12 can be increased, and the heat cycle reliability can be improved.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolak type curing agent hereinafter, the phenol novolak type curing agent is also referred to as a phenol novolak resin
  • a phenol aralkyl resin a phenol aralkyl resin
  • a biphenyl aralkyl resin a dicyclopentadiene type phenol resin
  • cresol novolak resin a cresol novolak resin
  • resole resin or the like
  • These phenolic resins may be used alone or in combination of two or more.
  • a phenol novolac type curing agent is preferable from the viewpoint of high curing reactivity.
  • the hydroxyl equivalent of the phenol resin is preferably 70 g / eq to 250 g / eq.
  • the softening point of the phenol resin is preferably 50 ° C. or higher. When it is 50 ° C. or higher, handling properties at room temperature can be improved.
  • the softening point of the phenol resin is preferably 120 ° C. or lower. Melt viscosity can be reduced as it is 120 degrees C or less.
  • the total content of the epoxy resin and the phenol resin in the thermosetting resin sheet 12 is preferably 5% by weight or more, more preferably 8% by weight or more. When it is 5% by weight or more, sufficient cured product strength can be obtained.
  • the total content of the epoxy resin and the phenol resin in the thermosetting resin sheet 12 is preferably 30% by weight or less, more preferably 25% by weight or less, further preferably 20% by weight or less, and particularly preferably 15% by weight or less. is there. When it is 30% by weight or less, the linear expansion coefficient of the cured product is small, and low water absorption is easily obtained.
  • the blending ratio of the epoxy resin and the phenol resin is such that the total of hydroxyl groups in the phenol resin is 0.7 equivalent to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin. It is preferably blended, more preferably 0.9 equivalent to 1.2 equivalent.
  • thermosetting resin sheet 12 preferably contains an inorganic filler.
  • the inorganic filler examples include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina (aluminum oxide), boron nitride, aluminum nitride, and silicon carbide.
  • silica is preferable because the thermal expansion coefficient can be satisfactorily reduced.
  • Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity.
  • a thermally conductive filler is preferable because of its high thermal conductivity, and alumina, boron nitride, and aluminum nitride are more preferable.
  • an electrically insulating thing is preferable.
  • the maximum particle size of the inorganic filler is preferably 30 ⁇ m or less, more preferably 20 ⁇ m or less. When the thickness is 30 ⁇ m or less, the gap between the substrate 11a and the semiconductor chip 11b can be satisfactorily filled. On the other hand, the maximum particle size of the inorganic filler is preferably 5 ⁇ m or more. The maximum particle size of the inorganic filler can be measured by the method described in the examples.
  • At least peak A and peak B exist in the particle size distribution of the inorganic filler. Specifically, it is preferable that the peak A exists in the particle size range of 0.01 ⁇ m to 10 ⁇ m and the peak B exists in the particle size range of 1 ⁇ m to 100 ⁇ m. Thereby, it becomes possible to fill the inorganic filler that forms the peak A between the inorganic fillers that form the peak B, and the inorganic filler can be highly filled.
  • the peak A exists in a particle size range of 0.1 ⁇ m or more. More preferably, the peak A exists in a particle size range of 1 ⁇ m or less.
  • the peak B is more preferably present in the particle size range of 2.5 ⁇ m or more, and more preferably in the particle size range of 4 ⁇ m or more. More preferably, the peak B exists in a particle size range of 10 ⁇ m or less.
  • peaks other than peak A and peak B may exist.
  • the particle size distribution of the inorganic filler can be measured by the following method.
  • Thermosetting resin sheet 12 is put in a crucible and ignited to incinerate thermosetting resin sheet 12.
  • the obtained ash was dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and the particle size distribution (volume basis) using a laser diffraction / scattering particle size distribution analyzer (“LS 13 320” manufactured by Beckman Coulter, Inc .; wet method). )
  • the inorganic filler may be treated (pretreated) with a silane coupling agent. Thereby, the wettability with resin can be improved and the dispersibility of an inorganic filler can be improved.
  • the silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.
  • hydrolyzable group examples include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group.
  • a methoxy group is preferable because it easily removes volatile components such as alcohol generated by hydrolysis.
  • organic functional group examples include vinyl group, epoxy group, styryl group, methacryl group, acrylic group, amino group, ureido group, mercapto group, sulfide group, and isocyanate group.
  • an epoxy group is preferable because it easily reacts with an epoxy resin or a phenol resin.
  • silane coupling agent examples include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane; p-styryltrimethoxysilane, etc.
  • vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane
  • 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyl
  • Styryl group-containing silane coupling agent 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltri Methacrylic group-containing silane coupling agents such as toxisilane; Acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N Amino group-containing silane coupling agents such as phenyl-3-a
  • the method for treating the inorganic filler with the silane coupling agent is not particularly limited, and is a wet method in which the inorganic filler and the silane coupling agent are mixed in a solvent, and the inorganic filler and the silane coupling agent are treated in a gas phase. And dry method.
  • the treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.1 part by weight to 1 part by weight of the silane coupling agent with respect to 100 parts by weight of the untreated inorganic filler.
  • the content of the inorganic filler in the thermosetting resin sheet 12 is preferably 70% by weight or more, more preferably 75% by weight or more. When it is 70% by weight or more, the thermal expansion coefficient of the cured product of the thermosetting resin sheet 12 can be reduced, and the heat resistance cycle reliability of the semiconductor device 4 can be improved.
  • the content of the inorganic filler in the thermosetting resin sheet 12 is preferably 90% by weight or less, more preferably 87% by weight or less. When it is 90% by weight or less, the fluidity of the thermosetting resin sheet 12 can be improved, and the thermosetting resin sheet 12 can follow the semiconductor chip 11b. Further, the gap between the substrate 11a and the semiconductor chip 11b can be satisfactorily filled.
  • thermosetting resin sheet 12 preferably contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Of these, 2-phenyl-4,5-dihydroxymethylimidazole is preferred because good storage stability can be obtained.
  • the content of the curing accelerator is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight or more with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin. When it is 0.1 parts by weight or more, curing is completed within a practical time. Further, the content of the curing accelerator is preferably 5 parts by weight or less, more preferably 2 parts by weight or less. When it is 5 parts by weight or less, good storage stability is obtained.
  • the thermosetting resin sheet 12 may include a thermoplastic resin.
  • Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
  • thermoplastic resin An elastomer is preferable as the thermoplastic resin.
  • a core-shell type acrylic resin having a core layer made of a rubber component and a shell layer made of an acrylic resin is particularly preferable because of dispersibility in an epoxy resin.
  • the rubber component of the core layer is not particularly limited, and examples thereof include butadiene rubber, isoprene rubber, chloroprene rubber, acrylic rubber, and silicon rubber.
  • the average particle diameter of the core-shell type acrylic resin is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more. Dispersibility is favorable in it being 0.1 micrometer or more.
  • the average particle diameter of the core-shell type acrylic resin is preferably 200 ⁇ m or less, more preferably 100 ⁇ m or less.
  • seat is favorable in it being 200 micrometers or less.
  • the average particle size can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the thermoplastic resin in the thermosetting resin sheet 12 is preferably 1% by weight or more, and more preferably 2% by weight or more. When it is 1% by weight or more, sufficient cured product strength can be obtained.
  • the content of the thermoplastic resin in the thermosetting resin sheet 12 is preferably 20% by weight or less, and more preferably 10% by weight or less. When it is 20% by weight or less, the linear expansion coefficient of the cured product is small, and low water absorption is easily obtained.
  • thermosetting resin sheet 12 may appropriately contain, in addition to the above-described components, a compounding agent generally used for producing a sealing resin, for example, a flame retardant component, a pigment, and the like.
  • thermosetting resin sheet 12 can be manufactured by a coating method.
  • a coating method For example, an adhesive composition solution containing each of the components described above is prepared, and the adhesive composition solution is applied on a base separator to a predetermined thickness to form a coating film, and then the coating film is dried.
  • the thermosetting resin sheet 12 can be manufactured.
  • the solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable.
  • organic solvent capable of uniformly dissolving, kneading or dispersing the above components.
  • examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.
  • polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used.
  • a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent
  • Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating.
  • the drying conditions for the coating film are not particularly limited, and for example, the drying can be performed at a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.
  • thermosetting resin sheet 12 the method of plastically processing the kneaded material obtained by kneading each said component (for example, an epoxy resin, a phenol resin, an inorganic filler, a hardening accelerator, etc.) in a sheet form is also preferable.
  • each said component for example, an epoxy resin, a phenol resin, an inorganic filler, a hardening accelerator, etc.
  • the inorganic filler can be highly filled and the thermal expansion coefficient can be designed low.
  • a kneaded material was prepared by melting and kneading an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and the like with a known kneader such as a mixing roll, a pressure kneader, and an extruder.
  • the kneaded product is plastically processed into a sheet.
  • the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less.
  • the lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher.
  • the kneading time is preferably 1 to 30 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
  • the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the thickness of the thermosetting resin sheet 12 is not particularly limited, but is preferably 100 ⁇ m or more, more preferably 150 ⁇ m or more.
  • the thickness of the thermosetting resin sheet 12 is preferably 2000 ⁇ m or less, more preferably 1000 ⁇ m or less. Within the above range, the semiconductor chip 11b can be satisfactorily sealed.
  • the thermosetting resin sheet 12 may have a single layer structure or a multilayer structure in which two or more thermosetting resin layers are laminated.
  • a single layer structure is preferred because there is no risk of delamination and the sheet thickness is highly uniform.
  • the upper mold 2002 includes a middle part 2002a and an outer peripheral part 2002b.
  • the lower mold 2001 is disposed on the outer periphery of the middle part and the middle part, and includes an outer circumferential part extending in the thickness direction of the middle part.
  • Modification 2 In the first embodiment, the laminate 201 is disposed on the lower mold 2001. However, in Modification 2, the chip mounting substrate 11 is disposed on the lower mold 2001, and then the thermosetting resin sheet 12 is fixed to the upper mold 2002. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
  • Modification 3 In the first embodiment, the laminate 201 is disposed on the lower mold 2001. However, in Modification 3, the thermosetting resin sheet 12 is fixed to the upper mold 2002, and then the chip mounting substrate 11 is disposed on the lower mold 2001. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
  • the gap between the substrate 11a and the semiconductor chip 11b is covered while the semiconductor chip 11b is covered with the thermosetting resin sheet 12 by pressurizing the laminate 201 under heating.
  • the step of filling the thermosetting resin sheet 12 is included.
  • the laminate 201 is heated using the compression molding die 200. Pressurize below.
  • the manufacturing method of the semiconductor device 4 of the first embodiment further includes a step of forming the cured body 3 by heating the sealing body 2 and a step of obtaining the semiconductor device 4 by dicing the cured body 3. .
  • the laminate 202 is placed on the lower mold 2001.
  • the laminate 202 includes a chip mounting wafer 61 and the thermosetting resin sheet 12 disposed on the chip mounting wafer 61.
  • the chip mounting wafer 61 includes a semiconductor wafer 61a and a semiconductor chip 61b flip-chip mounted (flip chip bonding) on the semiconductor wafer 61a.
  • the semiconductor wafer 61a includes an electrode 601a and a through electrode 601b electrically connected to the electrode 601a. That is, the semiconductor wafer 61a includes a through electrode 601b extending in the thickness direction of the semiconductor wafer 61a and an electrode 601a electrically connected to the through electrode 601b. Both sides of the semiconductor wafer 61a can be defined by a circuit forming surface provided with the electrode 601a and a surface facing the circuit forming surface.
  • the semiconductor chip 61b has a circuit formation surface (active surface). Bumps 62 are arranged on the circuit formation surface of the semiconductor chip 61b.
  • the semiconductor chip 61 b and the semiconductor wafer 61 a are electrically connected via bumps 62.
  • the lower mold 2001 and the upper mold 2002 are heated in advance. Suitable temperatures of the lower mold 2001 and the upper mold 2002 are the same as those described in the first embodiment.
  • the laminate 202 is heated under pressure, While covering the semiconductor chip 61b with the thermosetting resin sheet 12, the gap between the semiconductor wafer 61a and the semiconductor chip 61b is filled with the thermosetting resin sheet 12. Thereby, the sealing body 7 is obtained.
  • Suitable heating time is the same as the heating time described in the first embodiment.
  • a suitable intracavity pressure is the same as the intracavity pressure described in the first embodiment.
  • the sealing body 7 includes a chip mounting wafer 61 and a resin layer 71 disposed on the chip mounting wafer 61.
  • the resin layer 71 includes an underfill portion 71a sandwiched between the semiconductor wafer 61a and the semiconductor chip 61b, and a sealing portion 71b disposed around the underfill portion 71a.
  • the semiconductor chip 61b is covered with a sealing portion 71b.
  • the resin layer 71 is cured and the cured body 8 is obtained.
  • the temperature and holding time for holding the sealing body 7 can be set as appropriate.
  • the cured body 8 includes a chip mounting wafer 61 and a hardened layer 81 disposed on the chip mounting wafer 61.
  • the hardened layer 81 includes a connection protection part 81a sandwiched between the semiconductor wafer 61a and the semiconductor chip 61b, and a chip protection part 81b disposed around the connection protection part 81a.
  • the semiconductor chip 61b is covered with a chip protection part 81b.
  • Both sides of the cured body 8 can be defined by a wafer surface on which the semiconductor wafer 61a is disposed and a cured surface facing the wafer surface.
  • a cured layer 81 is disposed on the cured surface.
  • the hardened layer 81 of the hardened body 8 is ground.
  • the semiconductor wafer 61a of the cured body 8 is ground to expose the through electrode 601b. That is, the through electrode 601b is exposed on the ground surface 82 obtained by grinding the wafer surface.
  • the rewiring layer 83 is formed on the grinding surface 82 by using a semi-additive method or the like, and the rewiring body 84 is formed.
  • the rewiring layer 83 includes a rewiring 83a.
  • bumps 85 are formed on the rewiring layer 83.
  • the bump 85 is electrically connected to the semiconductor chip 61b through the rewiring 83a, the through electrode 601b, the electrode 601a, and the bump 62.
  • the rewiring body 84 is separated (diced) to obtain the semiconductor device 9.
  • the upper mold 2002 includes a middle part 2002a and an outer peripheral part 2002b.
  • the lower mold 2001 is disposed on the outer periphery of the middle part and the middle part, and includes an outer circumferential part extending in the thickness direction of the middle part.
  • Modification 2 In the second embodiment, the laminate 202 is disposed on the lower mold 2001. However, in Modification 2, the chip mounting wafer 61 is disposed on the lower mold 2001, and then the thermosetting resin sheet 12 is fixed to the upper mold 2002. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
  • Modification 3 In the second embodiment, the laminate 202 is disposed on the lower mold 2001. However, in Modification 3, the thermosetting resin sheet 12 is fixed to the upper mold 2002, and then the chip mounting wafer 61 is disposed on the lower mold 2001. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
  • the stacked body 202 is pressed under heat, so that the semiconductor chip 61b is covered with the thermosetting resin sheet 12, and the semiconductor wafer 61a and the semiconductor chip 61b are covered.
  • a step of filling the gap with the thermosetting resin sheet 12 is included.
  • the laminate 202 is formed using the compression mold 200. Pressurize under heating.
  • the manufacturing method of the semiconductor device 9 according to the second embodiment includes a step of forming the cured body 8 by heating the sealing body 7 and a step of forming the rewiring body 84 by forming the rewiring layer 83 on the cured body 8. And a step of obtaining the semiconductor device 9 by dicing the rewiring body 84.
  • a vacuum heat bonding apparatus (hereinafter also referred to as a vacuum heat press apparatus) will be described.
  • a vacuum heat bonding apparatus for example, a vacuum heat bonding apparatus described in JP2013-52424A can be suitably used.
  • a pressurizing cylinder lower plate 102 is disposed on a base 101, and a slide moving table 103 is vacuumed by a slide cylinder 104 on the pressurizing cylinder lower plate 102. It is arranged so as to be movable inside and outside the heat and pressure apparatus.
  • a lower heater plate 105 is disposed above the slide moving table 103, a lower plate member 106 is disposed on the upper surface of the lower heater plate 105, and a stage (hereinafter also referred to as a substrate mounting table) is disposed on the upper surface of the lower plate member 106. 107) is arranged.
  • a plurality of support columns 108 are arranged and erected on the pressure cylinder lower plate 102, and a pressure cylinder upper plate 109 is fixed to the upper end portion of the support column 108.
  • An intermediate moving member (intermediate member) 110 is disposed below the pressure cylinder upper plate 109 through a support column 108, and an upper heater plate 111 is fixed below the intermediate moving member 110 via a heat insulating plate.
  • An upper frame member 112 is airtightly fixed to the outer peripheral portion of the lower surface of the plate 111 and extends downward.
  • an inner frame 113 is fixed to the inner surface of the upper frame member 112 on the lower surface of the upper heater plate 111.
  • a flat plate 117 is fixed on the lower surface of the upper heater plate 111 inside the inner frame 113.
  • the inner frame body 113 includes a frame-shaped pressing portion 113a at the lower end portion and a rod 113b extending upward therefrom, a spring is disposed around the rod 113b, and the rod 113b is heat-insulated and fixed to the lower surface of the upper heater plate 111. ing.
  • the frame-shaped presser portion 113a is biased downward by a spring with respect to the rod 113b.
  • the frame-shaped presser portion 113 a can hold the film 13 in an airtight manner with the stage 107.
  • a pressure cylinder 114 is disposed on the upper surface of the pressure cylinder upper plate 109, and the cylinder rod 115 of the pressure cylinder 114 passes through the pressure cylinder upper plate 109 and is fixed to the upper surface of the intermediate moving member 110.
  • S is a stopper that restricts the downward movement of the intermediate moving member 110, the upper heater plate 111, and the upper frame member 112 by the pressure cylinder 114.
  • the stopper plate descends and stops on the upper surface of the main body of the pressure cylinder 114. It comes to contact with.
  • As the pressurizing cylinder 114 a hydraulic cylinder, a pneumatic cylinder, a servo cylinder, or the like is used.
  • the pressurizing cylinder 114 is lowered from the state where the upper frame member 112 is pulled up, and the lower end portion of the upper frame member 112 slides in an airtight manner on the stepped portion provided at the outer peripheral end portion of the lower plate member 106, and is once pressurized there.
  • the cylinder 114 is stopped.
  • a storage container including the upper heater plate 111, the upper frame member 112, and the lower plate member 106 is formed.
  • the upper frame member 112 is provided with a vacuum / pressure port 116 for evacuating and pressurizing the inside of the storage container (hereinafter also referred to as a chamber).
  • the slide cylinder 104 can pull out the slide moving table 103, the lower heater plate 105, the lower plate member 106, and the stage 107 as a unit.
  • the laminated body 1 etc. can be arrange
  • the laminated body 1 is placed on the stage 107.
  • the laminate 1 includes a chip mounting substrate 11, a thermosetting resin sheet 12 disposed on the chip mounting substrate 11, and a film 13 disposed on the thermosetting resin sheet 12.
  • thermosetting resin sheet 12 is a size capable of sealing the semiconductor chip 11b.
  • the film 13 includes a central portion 13a that is in contact with the thermosetting resin sheet 12 and a peripheral portion 13b that is disposed around the central portion 13a.
  • the outer dimension of the film 13 is a size that can cover the chip mounting substrate 11 and the thermosetting resin sheet 12.
  • the film 13 is not particularly limited, and examples thereof include a fluorine film, a polyolefin film, and a polyethylene terephthalate (PET) film.
  • the tensile elongation at break of the film 13 at 23 ° C. is preferably 30% or more, more preferably 40% or more. When it is 30% or more, the unevenness followability at the time of molding is good.
  • the tensile elongation at break of the film 13 at 23 ° C. is preferably 300% or less, more preferably 100% or less. If it is 300% or less, peeling work is easy.
  • the tensile elongation at break can be measured according to ASTM D882.
  • the softening temperature of the film 13 is not specifically limited, Preferably it is 80 degrees C or less, More preferably, it is 60 degrees C or less. When the temperature is 80 ° C. or less, the unevenness followability at the time of molding is good.
  • the softening temperature of the film 13 is preferably 0 ° C. or higher.
  • the temperature at which the tensile elastic modulus is 300 MPa is defined as the softening temperature.
  • the thickness of the film 13 is not particularly limited, but is preferably 10 ⁇ m to 200 ⁇ m.
  • the stage 107 has been heated in advance.
  • the temperature of the stage 107 is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, and further preferably 85 ° C. or higher. When it is 70 ° C. or higher, the thermosetting resin sheet 12 can be melted and fluidized.
  • the temperature of the stage 107 is preferably 120 ° C. or lower, more preferably 110 ° C. or lower. When the temperature is 120 ° C. or lower, the progress of thermosetting of the thermosetting resin sheet 12 can be suppressed, and an increase in viscosity can be suppressed.
  • the upper heater plate 111 and the upper frame member 112 are lowered, and the lower end portion of the upper frame member 112 is slid in an airtight manner along the outer edge portion of the lower plate member 106.
  • a chamber hermetically surrounded by the frame member 112 and the lower plate member 106 is formed. At the stage where the chamber is formed, the lowering of the upper heater plate 111 and the upper frame member 112 is stopped.
  • the pressure in the chamber is preferably 500 Pa or less.
  • the outer periphery 13 b of the film 13 is pressed against the stage 107 by lowering the frame-shaped presser 113 a to form the sealed container 121.
  • the sealed container 121 includes a stage 107 and a film 13. Inside the airtight container 121, the chip mounting substrate 11 and the thermosetting resin sheet 12 disposed on the chip mounting substrate 11 are disposed. In addition, in order to form the airtight container 121 after making the inside of a chamber into the pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
  • the pressure in the chamber is set to atmospheric pressure by opening the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
  • the pressure in the chamber is increased by introducing a gas into the vacuum / pressurizing port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure.
  • the thermosetting resin sheet 12 is filled in the gap between the substrate 11a and the semiconductor chip 11b while covering the semiconductor chip 11b with the thermosetting resin sheet 12.
  • the sealing body 2 is obtained.
  • the gas is not particularly limited, and examples thereof include air and nitrogen.
  • the pressure outside the sealed container 121 after the gas introduction is preferably 0.5 MPa or more, more preferably 0.6 MPa or more, and further preferably 0.7 MPa or more.
  • the upper limit of the pressure outside the sealed container 121 is not particularly limited, but is preferably 0.99 MPa or less, more preferably 0.9 MPa or less.
  • Sealing body 2 is in contact with film 13.
  • a spacer 131 is disposed beside the sealing body 2.
  • the sealing body 2 is pressed and the thickness of the sealing body 2 is adjusted by lowering the flat plate 117 until it hits the spacer 131. Thereby, the thickness of the sealing body 2 can be made uniform.
  • the pressure when pressing the sealing body 2 with the flat plate 117 is preferably 0.1 MPa to 80 MPa.
  • the resin layer 21 is cured by heating the sealing body 2 to form the cured body 3.
  • the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • bumps 32 are provided on the substrate 11a.
  • the cured body 3 is separated (diced) to obtain the semiconductor device 4.
  • the laminate 1 is disposed on the stage 107.
  • the chip mounting substrate 11 is disposed on the stage 107, and then the thermosetting resin sheet 12 is disposed on the chip mounting substrate 11. Then, the film 13 is disposed on the thermosetting resin sheet 12.
  • Modification 2 In the third embodiment, the laminate 1 is disposed on the stage 107.
  • the laminate 201 including the chip mounting substrate 11 and the thermosetting resin sheet 12 disposed on the chip mounting substrate 11 is disposed on the stage 107. Then, the film 13 is placed on the laminate 201.
  • the gap between the substrate 11a and the semiconductor chip 11b is covered while the semiconductor chip 11b is covered with the thermosetting resin sheet 12 by pressurizing the laminate 201 under heating.
  • the step of filling the thermosetting resin sheet 12 is included.
  • the process of filling the gap between the substrate 11a and the semiconductor chip 11b with the thermosetting resin sheet 12 while covering the semiconductor chip 11b with the thermosetting resin sheet 12 is performed by pressing the outer peripheral portion 13b of the laminate 1 against the stage 107.
  • the step of forming the sealed container 121 and the pressure outside the sealed container 121 are made higher than the pressure inside the sealed container 121, so that the semiconductor chip 11b is covered with the thermosetting resin sheet 12 and the substrate 11a and the semiconductor chip 11b are covered. Filling the gap with the thermosetting resin sheet 12.
  • the manufacturing method of the semiconductor device 4 of the third embodiment further includes a step of forming the cured body 3 by heating the sealing body 2 and a step of obtaining the semiconductor device 4 by dicing the cured body 3. .
  • the laminated film 10 is fixed to the frame-shaped presser portion 113a.
  • the laminated film 10 includes a thermosetting resin sheet 12 and a film 13 disposed on the thermosetting resin sheet 12.
  • a fixing method for example, a method of adsorbing the laminated film 10 to the frame-shaped presser portion 113a, a method of fixing the laminated film 10 to the frame-shaped presser portion 113a with an adhesive, and a method of winding the film 13 around the frame-shaped presser portion 113a and so on.
  • the chip mounting substrate 11 is placed on the stage 107.
  • the stage 107 has been heated in advance. Suitable temperature conditions for the stage 107 are the same as those described in the third embodiment.
  • the upper heater plate 111 and the upper frame member 112 are lowered, and the lower end portion of the upper frame member 112 is airtightly slid along the outer edge portion of the lower plate member 106, A chamber hermetically surrounded by the frame member 112 and the lower plate member 106 is formed. At the stage where the chamber is formed, the lowering of the upper heater plate 111 and the upper frame member 112 is stopped.
  • the pressure in the chamber is preferably 500 Pa or less.
  • the laminated film 10 is disposed on the chip mounting substrate 11 by lowering the frame-shaped pressing part 113a, and the laminated body 1 is formed.
  • the sealed container 121 includes a stage 107 and a film 13. Inside the airtight container 121, the chip mounting substrate 11 and the thermosetting resin sheet 12 disposed on the chip mounting substrate 11 are disposed. In addition, in order to form the airtight container 121 after making the inside of a chamber into the pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
  • the pressure in the chamber is set to atmospheric pressure by opening the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
  • the pressure in the chamber is increased by introducing gas into the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure.
  • the thermosetting resin sheet 12 is filled in the gap between the substrate 11a and the semiconductor chip 11b while covering the semiconductor chip 11b with the thermosetting resin sheet 12.
  • the sealing body 2 is obtained.
  • the gas is not particularly limited, and examples thereof include air and nitrogen.
  • a suitable pressure outside the sealed container 121 is the same as the pressure described in the third embodiment.
  • a spacer 131 is disposed beside the sealing body 2.
  • the sealing body 2 is pressed by lowering the flat plate 117 until it hits the spacer 131, and the thickness of the sealing body 2 is adjusted. Thereby, the thickness of the sealing body 2 can be made uniform.
  • the pressure when pressing the sealing body 2 with the flat plate 117 is preferably 0.1 MPa to 80 MPa.
  • the resin layer 21 is cured by heating the sealing body 2 to form the cured body 3.
  • Suitable heating temperature is the same as the heating temperature described in the third embodiment.
  • a suitable heating time is the same as the heating time described in the third embodiment.
  • bumps 32 are provided on the substrate 11a.
  • the hardened body 3 is separated into pieces (dicing) to obtain the semiconductor device 4.
  • Modification 1 In the fourth embodiment, after the laminated film 10 is fixed to the frame-shaped pressing portion 113a, the chip mounting substrate 11 is disposed on the stage 107. However, in Modification 1, after the chip mounting substrate 11 is disposed on the stage 107, The laminated film 10 is fixed to the frame-shaped presser portion 113a.
  • the gap between the substrate 11a and the semiconductor chip 11b is obtained by covering the semiconductor chip 11b with the thermosetting resin sheet 12 by pressurizing the laminate 201 under heating.
  • the step of filling the thermosetting resin sheet 12 is included.
  • the laminated film 10 is disposed on the chip mounting substrate 11 in a reduced pressure atmosphere.
  • the step of forming the laminated body 1 the step of forming the sealed container 121 by pressing the outer peripheral portion 13 b of the laminated body 1 against the stage 107, and the pressure outside the sealed container 121 are set inside the sealed container 121.
  • the manufacturing method of the semiconductor device 4 of the fourth embodiment further includes a step of forming the cured body 3 by heating the sealing body 2, a step of obtaining the semiconductor device 4 by dicing the cured body 3, and the like. .
  • the laminate 6 includes a chip mounting wafer 61, a thermosetting resin sheet 12 disposed on the chip mounting wafer 61, and a film 13 disposed on the thermosetting resin sheet 12.
  • the film 13 includes a central portion 13a that is in contact with the thermosetting resin sheet 12 and a peripheral portion 13b that is disposed around the central portion 13a.
  • the stage 107 has been heated in advance. Suitable temperature conditions for the stage 107 are the same as those described in the third embodiment.
  • the upper heater plate 111 and the upper frame member 112 are lowered by the pressure cylinder 114, and the lower end portion of the upper frame member 112 is slid in an air-tight manner along the outer edge portion of the lower plate member 106.
  • a chamber that is hermetically surrounded by the heater plate 111, the upper frame member 112, and the lower plate member 106 is formed.
  • the lowering of the upper heater plate 111 and the upper frame member 112 is stopped.
  • the pressure in the chamber is preferably 500 Pa or less.
  • the sealed container 121 includes a stage 107 and a film 13. Inside the sealed container 121, the chip mounting wafer 61 and the thermosetting resin sheet 12 disposed on the chip mounting wafer 61 are disposed. In addition, in order to form the airtight container 121 after making the inside of a vacuum chamber into a pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
  • the pressure in the chamber is set to atmospheric pressure by opening the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
  • the pressure in the chamber is increased by introducing gas into the vacuum / pressurizing port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure.
  • the thermosetting resin sheet 12 is filled in the gap between the semiconductor wafer 61a and the semiconductor chip 61b while covering the semiconductor chip 61b with the thermosetting resin sheet 12. Thereby, the sealing body 7 is obtained.
  • the gas is not particularly limited, and examples thereof include air and nitrogen.
  • a suitable pressure outside the sealed container 121 is the same as the pressure described in the third embodiment.
  • Seal 7 is in contact with film 13.
  • a spacer 131 is disposed beside the sealing body 2.
  • the sealing body 2 is pressed by lowering the flat plate 117 until it hits the spacer 131, and the thickness of the sealing body 2 is adjusted. Thereby, the thickness of the sealing body 2 can be made uniform.
  • the pressure when pressing the sealing body 2 with the flat plate 117 is preferably 0.1 MPa to 80 MPa.
  • the sealing body 7 is heated to cure the resin layer 71 and form the cured body 8.
  • Suitable heating temperature is the same as the heating temperature described in the third embodiment.
  • a suitable heating time is the same as the heating time described in the third embodiment.
  • the hardened layer 81 of the hardened body 8 is ground.
  • the semiconductor wafer 61a of the cured body 8 is ground to expose the through electrode 601b. That is, the through electrode 601b is exposed on the ground surface 82 obtained by grinding the wafer surface.
  • the rewiring layer 83 is formed on the grinding surface 82 by using a semi-additive method or the like, and the rewiring body 84 is formed.
  • the rewiring layer 83 includes a rewiring 83a.
  • bumps 85 are formed on the rewiring layer 83.
  • the bump 85 is electrically connected to the semiconductor chip 61b through the rewiring 83a, the through electrode 601b, the electrode 601a, and the bump 62.
  • the rewiring body 84 is separated into pieces (dicing), and the semiconductor device 9 is obtained.
  • the laminated body 6 is disposed on the stage 107.
  • the chip mounting wafer 61 is disposed on the stage 107, and then the thermosetting resin sheet 12 is disposed on the chip mounting wafer 61. Then, the film 13 is disposed on the thermosetting resin sheet 12.
  • Modification 2 In the fifth embodiment, the stacked body 6 is disposed on the stage 107.
  • the stacked body 202 including the chip mounted wafer 61 and the thermosetting resin sheet 12 disposed on the chip mounted wafer 61 is disposed on the stage 107.
  • the film 13 is then placed on the laminate 202.
  • the semiconductor chip 61b is covered with the thermosetting resin sheet 12 by pressurizing the laminate 202 under heating, and the semiconductor wafer 61a and the semiconductor chip 61b are covered. Filling the gap with the thermosetting resin sheet 12.
  • the process of filling the gap between the semiconductor wafer 61 a and the semiconductor chip 61 b with the thermosetting resin sheet 12 while covering the semiconductor chip 61 b with the thermosetting resin sheet 12 is performed by pressing the outer peripheral portion 13 b of the stacked body 6 against the stage 107.
  • the semiconductor wafer 61a and the semiconductor chip are formed while covering the semiconductor chip 61b with the thermosetting resin sheet 12 by forming the sealed container 121 and increasing the pressure outside the sealed container 121 to be higher than the pressure inside the sealed container 121. Filling the gap 61b with the thermosetting resin sheet 12.
  • the manufacturing method of the semiconductor device 9 according to the fifth embodiment includes a step of forming the cured body 8 by heating the sealing body 7 and a step of forming the rewiring body 84 by forming the rewiring layer 83 on the cured body 8. And a step of obtaining the semiconductor device 9 by dicing the rewiring body 84.
  • Epoxy resin A EP828 manufactured by Mitsubishi Chemical Corporation (bisphenol A type epoxy resin, epkin equivalent of 184 g / eq to 194 g / eq, liquid at 23 ° C.)
  • Epoxy resin B YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, Epokin equivalent: 200 g / eq, softening point: 80 ° C.)
  • Epoxy resin C EPPN-501HY manufactured by Nippon Kayaku Co., Ltd.
  • Phenol novolac type curing agent A MEH-7500-3S manufactured by Meiwa Kasei Co., Ltd. (phenol novolak type curing agent, hydroxyl group equivalent 103 g / eq, softening point 83 ° C.)
  • Phenol novolac type curing agent B H-4 manufactured by Meiwa Kasei Co., Ltd. (phenol novolac type curing agent, hydroxyl group equivalent 105 g / eq, softening point 71 ° C.)
  • Acrylic resin Metablene J-5800 manufactured by Mitsubishi Rayon Co., Ltd.
  • Inorganic filler A FB-5SDC manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica, average particle size 5 ⁇ m, maximum particle size 20 ⁇ m)
  • Inorganic filler B SO-25R manufactured by Admatechs (fused spherical silica, average particle size 0.5 ⁇ m, maximum particle size 5 ⁇ m)
  • Inorganic filler C FB-3SDC manufactured by Denki Kagaku Kogyo Co., Ltd.
  • Semiconductor chip chip thickness 200 ⁇ m, chip size 10 mm ⁇ 10 mm, solder bump pitch 400 ⁇ m (full array), solder diameter 100 ⁇ m semiconductor chip Chip mounting substrate A: organic substrate (substrate size 240 mm ⁇ 190 mm, substrate thickness 240 ⁇ m organic substrate) and organic Chip mounting substrate comprising 48 semiconductor chips flip-chip mounted on the substrate Chip mounting substrate B: Flip to silicon wafer substrate (silicon wafer substrate with a substrate size of 8 inch diameter (200 mm diameter) and substrate thickness of 200 ⁇ m) and silicon wafer substrate Chip mounting substrate comprising 40 semiconductor chips mounted on a chip
  • the gap between the semiconductor chip and the organic substrate was 75 ⁇ m.
  • the gap between the semiconductor chip and the silicon wafer substrate was 75 ⁇ m.
  • thermosetting resin sheet Preparation of thermosetting resin sheet
  • each component is blended with a mixer, melt kneaded at 120 ° C. for 2 minutes with a twin-screw kneader, and then extruded from a T-die to give a thermosetting resin having a thickness of 400 ⁇ m.
  • a sheet was produced.
  • a compression mold was attached to a compression molding machine (WCM-300 manufactured by Apic Yamada). The mold was preheated to the temperature shown in Table 1.
  • the chip mounting substrate A was disposed on the lower mold, and then a thermosetting resin sheet (230 mm long ⁇ 180 mm wide ⁇ 400 ⁇ m thick thermosetting resin sheet) was disposed on the chip mounting substrate A. Subsequently, the sealing body was obtained by clamping with the pressure shown in Table 1 for 180 seconds.
  • a package was obtained by holding the sealed body at 175 ° C. for 6 hours.
  • the package includes a chip mounting substrate A and a hardened layer disposed on the chip mounting substrate A.
  • the hardened layer includes a connection protection unit sandwiched between the substrate and the semiconductor chip, and a chip protection unit disposed around the connection protection unit.
  • thermosetting resin sheet (Preparation of thermosetting resin sheet) A thermosetting resin sheet was produced in the same manner as in Example 1.
  • a compression mold was attached to a compression molding machine (WCM-300 manufactured by Apic Yamada). The mold was preheated to the temperature shown in Table 1. The chip mounting substrate B was placed on the lower mold, and then a thermosetting resin sheet (8 inch diameter, 400 ⁇ m thick thermosetting resin sheet) was placed on the chip mounting substrate B. Subsequently, the sealing body was obtained by clamping with the pressure shown in Table 1 for 180 seconds. A package was obtained by holding the sealed body at 175 ° C. for 6 hours.
  • thermosetting resin sheet was produced in the same manner as in Example 1. The obtained thermosetting resin sheet was freeze-ground and a powdery thermosetting resin was obtained.
  • thermosetting resin sheet The following evaluation was performed on the thermosetting resin sheet, the powdery thermosetting resin, and the package. The results are shown in Table 1.
  • a cured sheet was obtained by holding the thermosetting resin sheet at 150 ° C. for 1 hour.
  • the cured sheet was polished by an IP (ion polish) method. Subsequently, the diameter of the largest particle

Abstract

Provided is a semiconductor device production method with which it is possible to produce a semiconductor device with few voids. The present invention relates to a method for producing a semiconductor device, the method comprising a step for pressurizing, while heating, a laminate including a chip-mounted substrate and a thermosetting resin sheet arranged on the chip-mounted substrate, to thereby fill a gap between the substrate and a semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet.

Description

半導体装置の製造方法及び熱硬化性樹脂シートSemiconductor device manufacturing method and thermosetting resin sheet
　本発明は、半導体装置の製造方法及び熱硬化性樹脂シートに関する。 The present invention relates to a method for manufacturing a semiconductor device and a thermosetting resin sheet.
　フリップチップ接続方式の半導体装置の製造技術に関して、特許文献１には、半導体チップがフリップチップ接続方式で実装された基板を金型のキャビティ内に配置した後、キャビティ内に溶融状態のエポキシ樹脂組成物を所定の圧力で注入することにより、チップ下のギャップの充填とチップ全体の封止とを一括して行う技術が記載されている。チップ下のギャップの充填とチップ全体の封止とを一括して行う技術は、モールドアンダーフィルと呼ばれることがある。 Regarding the manufacturing technology of a flip-chip connection type semiconductor device, Patent Document 1 discloses that a substrate on which a semiconductor chip is mounted by a flip-chip connection method is placed in a cavity of a mold, and then a molten epoxy resin composition is formed in the cavity. A technique is described in which a gap under a chip and a whole chip are sealed together by injecting an object at a predetermined pressure. A technique for collectively filling the gap under the chip and sealing the whole chip is sometimes called mold underfill.
　一方、大面積の有機基板上に配置された多数のチップを一括して封止する技術、シリコンインターポーザー上に配置された多数のチップを一括して封止する技術に対する需要が、近年増している。 On the other hand, in recent years, there has been an increasing demand for a technique for collectively sealing a large number of chips arranged on a large-area organic substrate and a technique for collectively sealing a large number of chips arranged on a silicon interposer. Yes.
特許第５２５６１８５号公報Japanese Patent No. 5256185
　特許文献１に記載の技術により、大面積の基板上に配置された多数のチップを一括して封止すると、半導体装置内にボイドが生じやすい。キャビティを充填中にエポキシ樹脂組成物の粘度が上昇し、キャビティ全体を充填することが難しいためである。また、特許文献１に記載の技術では、エポキシ樹脂組成物中に配合されたフィラーのうち小粒径のフィラーが流れやすいため、フィラーの偏析が起こりやすい。 If a large number of chips arranged on a large-area substrate are sealed together by the technique described in Patent Document 1, voids are likely to be generated in the semiconductor device. This is because the viscosity of the epoxy resin composition increases during the filling of the cavity and it is difficult to fill the entire cavity. Moreover, in the technique of patent document 1, since the filler with a small particle diameter tends to flow among the fillers mix | blended in the epoxy resin composition, segregation of a filler tends to occur.
　本発明は前記課題を解決し、ボイドが少ない半導体装置を製造できる半導体装置の製造方法及び熱硬化性樹脂シートを提供することを目的とする。 This invention solves the said subject and aims at providing the manufacturing method and thermosetting resin sheet of a semiconductor device which can manufacture a semiconductor device with few voids.
　本発明は、チップ実装基板及びチップ実装基板上に配置された熱硬化性樹脂シートを備える積層物を加熱下で加圧することにより、半導体チップを熱硬化性樹脂シートで覆いつつ、基板と半導体チップのギャップに熱硬化性樹脂シートを充填する工程を含む半導体装置の製造方法に関する。チップ実装基板は、基板及び基板にフリップチップ実装された半導体チップを備える。チップ実装基板は、半導体チップを複数備えることが好ましい。 The present invention provides a substrate and a semiconductor chip while covering the semiconductor chip with the thermosetting resin sheet by pressurizing under heating a chip mounting substrate and a laminate including the thermosetting resin sheet disposed on the chip mounting substrate. The present invention relates to a method of manufacturing a semiconductor device including a step of filling a gap with a thermosetting resin sheet. The chip mounting substrate includes a substrate and a semiconductor chip flip-chip mounted on the substrate. The chip mounting substrate preferably includes a plurality of semiconductor chips.
　本発明では、樹脂シートを使用するため、樹脂を注入する工程が必要がない。したがって、トランスファ成型方式のモールドアンダーフィルに比べて、ボイドが少ない半導体装置を製造できる。また、トランスファ成型方式のモールドアンダーフィルに比べて、フィラーの偏析が生じ難い。 In the present invention, since a resin sheet is used, there is no need to inject a resin. Therefore, it is possible to manufacture a semiconductor device with fewer voids as compared with a transfer molding type mold underfill. Further, the segregation of the filler is less likely to occur as compared to the transfer molding type mold underfill.
　本発明の半導体装置の製造方法は、積層物を加熱下で加圧することにより、半導体チップを熱硬化性樹脂シートで覆いつつ、基板と半導体チップのギャップに熱硬化性樹脂シートを充填する工程を含む限り特に限定されない。本発明の半導体装置の製造方法は、例えば、半導体チップを熱硬化性樹脂シートで覆いつつ、基板と半導体チップのギャップに熱硬化性樹脂シートを充填する工程により得られた封止体を加熱することにより、硬化体を形成する工程、及び硬化体をダイシングすることにより、半導体装置を得る工程などをさらに含むことができる。本発明の半導体装置の製造方法は、例えば、封止体を加熱することにより硬化体を形成する工程、硬化体に再配線層を形成することにより再配線体を形成する工程、及び再配線体をダイシングすることにより半導体装置を得る工程などをさらに含むことができる。 The method for manufacturing a semiconductor device of the present invention includes a step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet by pressurizing the laminate under heating. It is not particularly limited as long as it is included. In the method for manufacturing a semiconductor device of the present invention, for example, the sealing body obtained by the step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet is heated. By this, the process of forming a hardening body, the process of obtaining a semiconductor device by dicing a hardening body, etc. can further be included. The method for manufacturing a semiconductor device of the present invention includes, for example, a step of forming a cured body by heating a sealing body, a step of forming a rewiring body by forming a rewiring layer on the cured body, and a rewiring body A step of obtaining a semiconductor device by dicing can be further included.
　半導体チップを熱硬化性樹脂シートで覆いつつ、基板と半導体チップのギャップに熱硬化性樹脂シートを充填する工程では、圧縮成型用の金型を用いて積層物を加熱下で加圧することが好ましい。すなわち、圧縮成型用の金型の内部に配置された積層物を加熱下で加圧することが好ましい。 In the step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering the semiconductor chip with the thermosetting resin sheet, it is preferable to pressurize the laminate under heating using a compression mold. . That is, it is preferable to pressurize the laminate disposed inside the mold for compression molding under heating.
　基板としては特に限定されず、例えば、有機基板、半導体ウェハ基板、ガラス基板などが挙げられる。半導体ウェハ基板としては、シリコンウェハ基板などが挙げられる。 The substrate is not particularly limited, and examples thereof include an organic substrate, a semiconductor wafer substrate, and a glass substrate. An example of the semiconductor wafer substrate is a silicon wafer substrate.
　基板の面積は、好ましくは１００００ｍｍ２以上である。本発明では１００００ｍｍ２以上の大面積の基板を採用する場合でも、ボイドが少ない半導体装置を製造できる。基板の面積の上限は特に限定されないが、例えば、２０００００ｍｍ２である。 The area of the substrate is preferably 10,000 mm 2 or more. In the present invention, even when a substrate with a large area of 10,000 mm 2 or more is employed, a semiconductor device with few voids can be manufactured. The upper limit of the area of the substrate is not particularly limited, for example, 200000 mm 2.
　基板の形状としては特に限定されない。基板の形状としては、例えば、多角形状、略多角形状、円形状、略円形状などが挙げられる。ここで、基板の形状とは、基板を平面視したときの形状である。 The shape of the substrate is not particularly limited. Examples of the shape of the substrate include a polygonal shape, a substantially polygonal shape, a circular shape, and a substantially circular shape. Here, the shape of the substrate is a shape when the substrate is viewed in plan.
　多角形状としては、例えば、長方形状、正方形状などが挙げられる。 Examples of the polygonal shape include a rectangular shape and a square shape.
　略多角形状には、少なくとも一部の角が丸みを帯びた多角形類似形状、少なくとも一部の辺又はその辺の一部が曲線の多角形類似形状などが含まれる。略多角形状としては、略長方形状、略正方形状などが挙げられる。 The substantially polygonal shape includes a polygon-like shape having at least some rounded corners, a polygon-like shape having at least a part of a side or a part of the side being a curve, and the like. Examples of the substantially polygonal shape include a substantially rectangular shape and a substantially square shape.
　多角形状の基板又は略多角形状の基板は、少なくとも１辺の長さが好ましくは１００ｍｍ以上である。多角形状の基板又は略多角形状の基板の面積は、好ましくは１００００ｍｍ２以上である。 The length of at least one side of the polygonal substrate or the substantially polygonal substrate is preferably 100 mm or more. The area of the polygonal substrate or the substantially polygonal substrate is preferably 10,000 mm 2 or more.
　略円形状には、楕円形状、周の少なくとも一部に凹凸部が形成された円形類似形状、周の少なくとも一部に線状部（以下、線状部を直線状部ともいう）が形成された円形類似形状、周の少なくとも一部に波線状部が形成された円形類似形状などが含まれる。 The substantially circular shape has an elliptical shape, a circular similar shape in which an uneven portion is formed on at least a part of the circumference, and a linear part (hereinafter, the linear part is also referred to as a linear part) on at least a part of the circumference. A circular similar shape, and a circular similar shape in which a wavy line portion is formed at least at a part of the circumference.
　円形状の基板又は略円形状の基板は、直径又は短径が好ましくは１５０ｍｍ以上である。 The circular substrate or the substantially circular substrate preferably has a diameter or a short diameter of 150 mm or more.
　熱硬化性樹脂シートの５０℃～１５０℃における最低溶融粘度が１０Ｐａ・Ｓ～５０００Ｐａ・Ｓであることが好ましい。１０Ｐａ・Ｓ以上であると、アウトガスによるボイドの発生を抑えることができる。５０００Ｐａ・Ｓ以下であると、半導体チップに対して熱硬化性樹脂シートを追従させることができる。また、基板と半導体チップのギャップに熱硬化性樹脂シートを容易に充填できる。 The minimum melt viscosity at 50 to 150 ° C. of the thermosetting resin sheet is preferably 10 Pa · S to 5000 Pa · S. Generation | occurrence | production of the void by outgas can be suppressed as it is 10 Pa * S or more. A thermosetting resin sheet can be made to follow a semiconductor chip as it is 5000 Pa * S or less. Further, the gap between the substrate and the semiconductor chip can be easily filled with the thermosetting resin sheet.
　熱硬化性樹脂シートは無機充填剤を含むことが好ましい。熱硬化性樹脂シート中の無機充填剤の含有量が７０重量％～９０重量％であることが好ましい。７０重量％以上であると、熱硬化性樹脂シートの硬化物の熱膨張係数を低下させることが可能で、半導体装置の耐熱サイクル信頼性を高められる。９０重量％以下であると、熱硬化性樹脂シートの流動性を向上させることが可能で、半導体チップに対して熱硬化性樹脂シートを追従させることができる。また、基板と半導体チップのギャップを良好に充填できる。 The thermosetting resin sheet preferably contains an inorganic filler. The content of the inorganic filler in the thermosetting resin sheet is preferably 70% by weight to 90% by weight. When it is 70% by weight or more, the thermal expansion coefficient of the cured product of the thermosetting resin sheet can be reduced, and the heat cycle reliability of the semiconductor device can be improved. When it is 90% by weight or less, the fluidity of the thermosetting resin sheet can be improved, and the thermosetting resin sheet can follow the semiconductor chip. In addition, the gap between the substrate and the semiconductor chip can be satisfactorily filled.
　無機充填剤の最大粒子径が３０μｍ以下であることが好ましい。３０μｍ以下であると、基板と半導体チップのギャップを良好に充填できる。 It is preferable that the maximum particle size of the inorganic filler is 30 μm or less. When the thickness is 30 μm or less, the gap between the substrate and the semiconductor chip can be satisfactorily filled.
　熱硬化性樹脂シートはエポキシ樹脂を含むことが好ましい。エポキシ樹脂はビスフェノールＡ型エポキシ樹脂を含み、エポキシ樹脂１００重量％中のビスフェノールＡ型エポキシ樹脂の含有量が２０重量％～７０重量％であることが好ましい。２０重量％以上であると、熱硬化性樹脂シートの可撓性に優れるため、取扱が容易である。７０重量％以下であると、熱硬化性樹脂シートの硬化物のＴｇを高めることが可能で、耐熱サイクル信頼性を高められる。 The thermosetting resin sheet preferably contains an epoxy resin. The epoxy resin contains a bisphenol A type epoxy resin, and the content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is preferably 20% by weight to 70% by weight. Since it is excellent in the flexibility of a thermosetting resin sheet as it is 20 weight% or more, handling is easy. When it is 70% by weight or less, the Tg of the cured product of the thermosetting resin sheet can be increased, and the heat cycle reliability can be improved.
　熱硬化性樹脂シートはフェノールノボラック型硬化剤及び硬化促進剤を含むことが好ましい。 The thermosetting resin sheet preferably contains a phenol novolac type curing agent and a curing accelerator.
　本発明はまた、積層物を加熱下で加圧することにより、半導体チップを熱硬化性樹脂シートで覆いつつ、基板と半導体チップのギャップに熱硬化性樹脂シートを充填する工程を含む半導体装置の製造方法に使用するための熱硬化性樹脂シートに関する。熱硬化性樹脂シートは、５０℃～１５０℃における最低溶融粘度が１０Ｐａ・Ｓ～５０００Ｐａ・Ｓであることが好ましい。 The present invention also provides a method for manufacturing a semiconductor device including a step of filling a gap between a substrate and a semiconductor chip with a thermosetting resin sheet while covering the semiconductor chip with a thermosetting resin sheet by pressurizing the laminate under heating. The present invention relates to a thermosetting resin sheet for use in the method. The thermosetting resin sheet preferably has a minimum melt viscosity of 10 Pa · S to 5000 Pa · S at 50 ° C. to 150 ° C.
　本発明によれば、ボイドが少ない半導体装置を製造できる。 According to the present invention, a semiconductor device with few voids can be manufactured.
積層物を下型上に配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the laminated body has been arrange | positioned on the lower mold | type. 封止体を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was formed. 硬化体の概略断面図である。It is a schematic sectional drawing of a hardening body. 硬化体の基板上にバンプを設けた様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the bump was provided on the board | substrate of a hardening body. 硬化体をダイシングすることにより得られた半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device obtained by dicing a hardening body. 積層物を下型上に配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the laminated body has been arrange | positioned on the lower mold | type. 封止体を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was formed. 硬化体の概略断面図である。It is a schematic sectional drawing of a hardening body. 硬化層を研削した後の硬化体の概略断面図である。It is a schematic sectional drawing of the hardening body after grinding a hardening layer. 半導体ウェハを研削した後の硬化体の概略断面図である。It is a schematic sectional drawing of the hardening body after grinding a semiconductor wafer. 再配線体の概略断面図である。It is a schematic sectional drawing of a rewiring body. 再配線体をダイシングすることにより得られた半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device obtained by dicing a rewiring body. 真空加熱接合装置の概略断面図である。It is a schematic sectional drawing of a vacuum heating joining apparatus. ステージ上に積層体を配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the laminated body has been arrange | positioned on the stage. チェンバーを形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the chamber was formed. チップ実装基板及び熱硬化性樹脂シートを格納する密閉容器を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the airtight container which stores a chip mounting substrate and a thermosetting resin sheet was formed. 密閉容器の外部の圧力を大気圧にした様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the external pressure of the airtight container was made into atmospheric pressure. 密閉容器の内外の圧力差を利用して封止体を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was formed using the pressure difference inside and outside of an airtight container. 封止体の横にスペーサーを配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the spacer was arrange | positioned beside the sealing body. 封止体を平板で押さえつけた様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was pressed down with the flat plate. 硬化体の概略断面図である。It is a schematic sectional drawing of a hardening body. 硬化体の基板上にバンプを設けた様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the bump was provided on the board | substrate of a hardening body. 硬化体をダイシングすることにより得られた半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device obtained by dicing a hardening body. 積層フィルムを枠状押え部に固定することによりチップ実装基板の上方に積層フィルムを配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the laminated | multilayer film was arrange | positioned above a chip mounting board | substrate by fixing a laminated | multilayer film to a frame-shaped holding part. チェンバーを形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the chamber was formed. チップ実装基板及び熱硬化性樹脂シートを格納する密閉容器を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the airtight container which stores a chip mounting substrate and a thermosetting resin sheet was formed. 密閉容器の外部の圧力を大気圧にした様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the external pressure of the airtight container was made into atmospheric pressure. 密閉容器の内外の圧力差を利用して封止体を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was formed using the pressure difference inside and outside of an airtight container. 封止体の横にスペーサーを配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the spacer was arrange | positioned beside the sealing body. 封止体を平板で押さえつけた様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was pressed down with the flat plate. 硬化体の概略断面図である。It is a schematic sectional drawing of a hardening body. 硬化体の基板上にバンプを設けた様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the bump was provided on the board | substrate of a hardening body. 硬化体をダイシングすることにより得られた半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device obtained by dicing a hardening body. ステージ上に積層体を配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the laminated body has been arrange | positioned on the stage. チェンバーを形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the chamber was formed. チップ実装ウェハ及び熱硬化性樹脂シートを格納する密閉容器を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the airtight container which stores a chip mounting wafer and a thermosetting resin sheet was formed. 密閉容器の外部の圧力を大気圧にした様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the external pressure of the airtight container was made into atmospheric pressure. 密閉容器の内外の圧力差を利用して封止体を形成した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was formed using the pressure difference inside and outside of an airtight container. 封止体の横にスペーサーを配置した様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the spacer was arrange | positioned beside the sealing body. 封止体を平板で押さえつけた様子の概略を示す断面図である。It is sectional drawing which shows the outline of a mode that the sealing body was pressed down with the flat plate. 硬化体の概略断面図である。It is a schematic sectional drawing of a hardening body. 硬化層を研削した後の硬化体の概略断面図である。It is a schematic sectional drawing of the hardening body after grinding a hardening layer. 半導体ウェハを研削した後の硬化体の概略断面図である。It is a schematic sectional drawing of the hardening body after grinding a semiconductor wafer. 再配線体の概略断面図である。It is a schematic sectional drawing of a rewiring body. 再配線体をダイシングすることにより得られた半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device obtained by dicing a rewiring body.
　以下に実施形態を掲げ、本発明を詳細に説明するが、本発明はこれらの実施形態のみに限定されるものではない。 Hereinafter, the present invention will be described in detail with reference to embodiments, but the present invention is not limited only to these embodiments.
　［実施形態１］
　（半導体装置４の製造方法）
　実施形態１では、圧縮成型用の金型２００を使用する。 [Embodiment 1]
(Method for Manufacturing Semiconductor Device 4)
In the first embodiment, a compression molding die 200 is used.
　図１に示すように、圧縮成型用の金型２００は、下型２００１及び上型２００２を備える。上型２００２は、中部２００２ａ及び中部２００２ａの外周に配置され、中部２００２ａの厚み方向に延びた外周部２００２ｂを備える。金型２００を閉じることにより、下型２００１及び上型２００２に挟まれたキャビティを形成する。 As shown in FIG. 1, a compression mold 200 includes a lower mold 2001 and an upper mold 2002. The upper mold 2002 is provided on the outer periphery of the middle part 2002a and the middle part 2002a and includes an outer circumferential part 2002b extending in the thickness direction of the middle part 2002a. By closing the mold 200, a cavity sandwiched between the lower mold 2001 and the upper mold 2002 is formed.
　下型２００１及び上型２００２はあらかじめ加熱されている。下型２００１及び上型２００２の温度は、好ましくは７０℃以上、より好ましくは８０℃以上、さらに好ましくは８５℃以上である。７０℃以上であると、熱硬化性樹脂シート１２を流動させた後、硬化させることができる。下型２００１及び上型２００２の温度は好ましくは２００℃以下、より好ましくは１８０℃以下、さらに好ましくは１７０℃以下である。 The lower mold 2001 and the upper mold 2002 are heated in advance. The temperature of the lower mold 2001 and the upper mold 2002 is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, and further preferably 85 ° C. or higher. It can be hardened after making the thermosetting resin sheet 12 flow as it is 70 degreeC or more. The temperature of the lower mold 2001 and the upper mold 2002 is preferably 200 ° C. or lower, more preferably 180 ° C. or lower, and further preferably 170 ° C. or lower.
　積層物２０１を下型２００１上に配置する。積層物２０１は、チップ実装基板１１及びチップ実装基板１１上に配置された熱硬化性樹脂シート１２を備える。 The laminate 201 is placed on the lower mold 2001. The laminate 201 includes a chip mounting substrate 11 and a thermosetting resin sheet 12 disposed on the chip mounting substrate 11.
　チップ実装基板１１は、基板１１ａ、基板１１ａにフリップチップ実装された半導体チップ１１ｂを備える。半導体チップ１１ｂと基板１１ａは、バンプ１１ｃを介して電気的に接続されている。 The chip mounting substrate 11 includes a substrate 11a and a semiconductor chip 11b flip-chip mounted on the substrate 11a. The semiconductor chip 11b and the substrate 11a are electrically connected via bumps 11c.
　図２に示すように、金型２００を閉じることにより、積層物２０１を加圧下で加熱して、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する。これにより、封止体２を得る。 As shown in FIG. 2, by closing the mold 200, the laminate 201 is heated under pressure and the semiconductor chip 11b is covered with the thermosetting resin sheet 12, while the gap between the substrate 11a and the semiconductor chip 11b is heated. The curable resin sheet 12 is filled. Thereby, the sealing body 2 is obtained.
　キャビティ内圧力は、好ましくは０．５ＭＰａ以上、より好ましくは１ＭＰａ以上である。０．５ＭＰａ以上であると、充填時に巻き込んだボイドを潰すことができる。キャビティ内圧力は、好ましくは１０ＭＰａ以下、より好ましくは８ＭＰａ以下である。１０ＭＰａ以下であると、半導体チップ１１ｂへのダメージを抑制することが可能で、高い信頼性を確保できる。 The cavity internal pressure is preferably 0.5 MPa or more, more preferably 1 MPa or more. If it is 0.5 MPa or more, the voids entrained during filling can be crushed. The pressure in the cavity is preferably 10 MPa or less, more preferably 8 MPa or less. When the pressure is 10 MPa or less, damage to the semiconductor chip 11b can be suppressed, and high reliability can be ensured.
　封止体２は、チップ実装基板１１及びチップ実装基板１１上に配置された樹脂層２１を備える。樹脂層２１は、基板１１ａと半導体チップ１１ｂの間に挟まれたアンダーフィル部２１ａ、及びアンダーフィル部２１ａの周辺に配置された封止部２１ｂを備える。半導体チップ１１ｂは、封止部２１ｂにより覆われている。 The sealing body 2 includes a chip mounting substrate 11 and a resin layer 21 disposed on the chip mounting substrate 11. The resin layer 21 includes an underfill portion 21a sandwiched between the substrate 11a and the semiconductor chip 11b, and a sealing portion 21b disposed around the underfill portion 21a. The semiconductor chip 11b is covered with a sealing portion 21b.
　キャビティに封止体２を保持することにより、樹脂層２１を硬化させて、硬化体３を得る。封止体２を保持する温度、保持時間は適宜設定できる。 By holding the sealing body 2 in the cavity, the resin layer 21 is cured and the cured body 3 is obtained. The temperature and holding time for holding the sealing body 2 can be set as appropriate.
　図３に示すように、硬化体３は、チップ実装基板１１及びチップ実装基板１１上に配置された硬化層３１を備える。硬化層３１は、基板１１ａと半導体チップ１１ｂの間に挟まれた接続保護部３１ａ、及び接続保護部３１ａの周辺に配置されたチップ保護部３１ｂを備える。半導体チップ１１ｂは、チップ保護部３１ｂにより覆われている。 As shown in FIG. 3, the cured body 3 includes a chip mounting substrate 11 and a cured layer 31 disposed on the chip mounting substrate 11. The hardened layer 31 includes a connection protection part 31a sandwiched between the substrate 11a and the semiconductor chip 11b, and a chip protection part 31b disposed around the connection protection part 31a. The semiconductor chip 11b is covered with a chip protection part 31b.
　図４に示すように、基板１１ａ上にバンプ３２を設ける。 As shown in FIG. 4, bumps 32 are provided on the substrate 11a.
　図５に示すように、硬化体３を個片化（ダイシング）して、半導体装置４を得る。 As shown in FIG. 5, the cured body 3 is separated (diced) to obtain the semiconductor device 4.
　（熱硬化性樹脂シート１２）
　熱硬化性樹脂シート１２について説明する。 (Thermosetting resin sheet 12)
The thermosetting resin sheet 12 will be described.
　熱硬化性樹脂シート１２の５０℃～１５０℃における最低溶融粘度は、好ましくは１０Ｐａ・Ｓ以上、より好ましくは１５Ｐａ・Ｓ以上である。１０Ｐａ・Ｓ以上であると、アウトガスによるボイドの発生を抑えることができる。熱硬化性樹脂シート１２の５０℃～１５０℃における最低溶融粘度は、好ましくは５０００Ｐａ・Ｓ以下、より好ましくは４５００Ｐａ・Ｓ以下である。５０００Ｐａ・Ｓ以下であると、半導体チップ１１ｂに対して熱硬化性樹脂シート１２を追従させることができる。また、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を容易に充填できる。
　最低溶融粘度は、実施例に記載の方法で測定できる。 The minimum melt viscosity at 50 ° C. to 150 ° C. of the thermosetting resin sheet 12 is preferably 10 Pa · S or more, more preferably 15 Pa · S or more. Generation | occurrence | production of the void by outgas can be suppressed as it is 10 Pa * S or more. The minimum melt viscosity at 50 ° C. to 150 ° C. of the thermosetting resin sheet 12 is preferably 5000 Pa · S or less, more preferably 4500 Pa · S or less. When it is 5000 Pa · S or less, the thermosetting resin sheet 12 can follow the semiconductor chip 11 b. Moreover, the thermosetting resin sheet 12 can be easily filled in the gap between the substrate 11a and the semiconductor chip 11b.
The minimum melt viscosity can be measured by the method described in Examples.
　熱硬化性樹脂シート１２の最低溶融粘度は、無機充填剤の含有量、無機充填剤の平均粒子径などによりコントロールできる。例えば、無機充填剤を減量すること、平均粒子径の大きい無機充填剤を使用することにより、最低溶融粘度を低減できる。 The minimum melt viscosity of the thermosetting resin sheet 12 can be controlled by the content of the inorganic filler, the average particle diameter of the inorganic filler, and the like. For example, the minimum melt viscosity can be reduced by reducing the amount of inorganic filler and using an inorganic filler having a large average particle diameter.
　熱硬化性樹脂シート１２は、熱硬化性樹脂を含むことが好ましい。熱硬化性樹脂としては、例えば、エポキシ樹脂、フェノール樹脂などを好適に使用できる。 The thermosetting resin sheet 12 preferably contains a thermosetting resin. As a thermosetting resin, an epoxy resin, a phenol resin, etc. can be used conveniently, for example.
　エポキシ樹脂としては、特に限定されるものではない。例えば、トリフェニルメタン型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、変性ビスフェノールＡ型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、変性ビスフェノールＦ型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、フェノキシ樹脂などの各種のエポキシ樹脂を用いることができる。これらエポキシ樹脂は単独で用いてもよいし２種以上併用してもよい。 The epoxy resin is not particularly limited. For example, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
　なかでも、可撓性を付与できるという理由から、ビスフェノールＡ型エポキシ樹脂が好ましく、２３℃で液状のものがより好ましい。ビスフェノールＡ型エポキシ樹脂のエポキシ当量は、１５０ｇ／ｅｑ～２５０ｇ／ｅｑが好ましい。 Among these, bisphenol A type epoxy resin is preferable because it can provide flexibility, and liquid at 23 ° C. is more preferable. The epoxy equivalent of the bisphenol A type epoxy resin is preferably 150 g / eq to 250 g / eq.
　また、低粘度化させることができるという理由から、ビスフェノールＡ型エポキシ樹脂とともに、ビスフェノールＦ型エポキシ樹脂を使用することが好ましい。ビスフェノールＦ型エポキシ樹脂の軟化点は、好ましくは５０℃以上である。５０℃以上であると、常温でのハンドリング性を向上できる。ビスフェノールＦ型エポキシ樹脂の軟化点は、好ましくは１００℃以下である。１００℃以下であると、溶融粘度を低下させることができる。ビスフェノールＦ型エポキシ樹脂のエポキシ当量は、１５０ｇ／ｅｑ～２５０ｇ／ｅｑが好ましい。 Moreover, it is preferable to use a bisphenol F type epoxy resin together with a bisphenol A type epoxy resin because the viscosity can be lowered. The softening point of the bisphenol F type epoxy resin is preferably 50 ° C. or higher. When it is 50 ° C. or higher, handling properties at room temperature can be improved. The softening point of the bisphenol F type epoxy resin is preferably 100 ° C. or lower. Melt viscosity can be reduced as it is 100 degrees C or less. The epoxy equivalent of the bisphenol F type epoxy resin is preferably 150 g / eq to 250 g / eq.
　エポキシ樹脂１００重量％中のビスフェノールＡ型エポキシ樹脂の含有量は、好ましくは２０重量％以上、より好ましくは２５重量％以上である。２０重量％以上であると、熱硬化性樹脂シート１２の可撓性に優れるため、取扱が容易である。エポキシ樹脂１００重量％中のビスフェノールＡ型エポキシ樹脂の含有量は、好ましくは７０重量％以下、より好ましくは６５重量％以下である。７０重量％以下であると、熱硬化性樹脂シート１２の硬化物のＴｇを高めることが可能で、耐熱サイクル信頼性を高められる。 The content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is preferably 20% by weight or more, more preferably 25% by weight or more. Since it is excellent in the flexibility of the thermosetting resin sheet 12 as it is 20 weight% or more, handling is easy. The content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is preferably 70% by weight or less, more preferably 65% by weight or less. When it is 70% by weight or less, the Tg of the cured product of the thermosetting resin sheet 12 can be increased, and the heat cycle reliability can be improved.
　フェノール樹脂は、エポキシ樹脂との間で硬化反応を生起するものであれば特に限定されるものではない。例えば、フェノールノボラック型硬化剤（以下、フェノールノボラック型硬化剤をフェノールノボラック樹脂ともいう）、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ジシクロペンタジエン型フェノール樹脂、クレゾールノボラック樹脂、レゾール樹脂などが用いられる。これらフェノール樹脂は単独で用いてもよいし、２種以上併用してもよい。なかでも、硬化反応性が高いという観点から、フェノールノボラック型硬化剤が好ましい。 The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, a phenol novolak type curing agent (hereinafter, the phenol novolak type curing agent is also referred to as a phenol novolak resin), a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more. Among these, a phenol novolac type curing agent is preferable from the viewpoint of high curing reactivity.
　エポキシ樹脂との反応性の観点から、フェノール樹脂の水酸基当量は、７０ｇ／ｅｑ～２５０ｇ／ｅｑが好ましい。フェノール樹脂の軟化点は、好ましくは５０℃以上である。５０℃以上であると、常温でのハンドリング性を向上することができる。フェノール樹脂の軟化点は、好ましくは１２０℃以下である。１２０℃以下であると、溶融粘度を低下させることができる。 From the viewpoint of reactivity with the epoxy resin, the hydroxyl equivalent of the phenol resin is preferably 70 g / eq to 250 g / eq. The softening point of the phenol resin is preferably 50 ° C. or higher. When it is 50 ° C. or higher, handling properties at room temperature can be improved. The softening point of the phenol resin is preferably 120 ° C. or lower. Melt viscosity can be reduced as it is 120 degrees C or less.
　熱硬化性樹脂シート１２中のエポキシ樹脂及びフェノール樹脂の合計含有量は、好ましくは５重量％以上、より好ましくは８重量％以上である。５重量％以上であると、充分な硬化物強度が得られる。熱硬化性樹脂シート１２中のエポキシ樹脂及びフェノール樹脂の合計含有量は、好ましくは３０重量％以下、より好ましくは２５重量％以下、さらに好ましくは２０重量％以下、特に好ましくは１５重量％以下である。３０重量％以下であると、硬化物の線膨張係数が小さく、かつ低吸水性が得られやすい。 The total content of the epoxy resin and the phenol resin in the thermosetting resin sheet 12 is preferably 5% by weight or more, more preferably 8% by weight or more. When it is 5% by weight or more, sufficient cured product strength can be obtained. The total content of the epoxy resin and the phenol resin in the thermosetting resin sheet 12 is preferably 30% by weight or less, more preferably 25% by weight or less, further preferably 20% by weight or less, and particularly preferably 15% by weight or less. is there. When it is 30% by weight or less, the linear expansion coefficient of the cured product is small, and low water absorption is easily obtained.
　エポキシ樹脂とフェノール樹脂の配合割合は、硬化反応性という観点から、エポキシ樹脂中のエポキシ基１当量に対して、フェノール樹脂中の水酸基の合計が０．７当量～１．５当量となるように配合することが好ましく、より好ましくは０．９当量～１．２当量である。 From the viewpoint of curing reactivity, the blending ratio of the epoxy resin and the phenol resin is such that the total of hydroxyl groups in the phenol resin is 0.7 equivalent to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin. It is preferably blended, more preferably 0.9 equivalent to 1.2 equivalent.
　熱硬化性樹脂シート１２は、無機充填剤を含むことが好ましい。 The thermosetting resin sheet 12 preferably contains an inorganic filler.
　無機充填剤としては、例えば、石英ガラス、タルク、シリカ（溶融シリカや結晶性シリカなど）、アルミナ（酸化アルミニウム）、窒化ホウ素、窒化アルミニウム、炭化珪素などが挙げられる。なかでも、熱膨張係数を良好に低減できるという理由から、シリカが好ましい。シリカとしては、流動性に優れるという理由から、溶融シリカが好ましく、球状溶融シリカがより好ましい。また、熱伝導率が高いという理由から、熱伝導性フィラーが好ましく、アルミナ、窒化ホウ素、窒化アルミニウムがより好ましい。なお、無機充填剤としては、電気絶縁性のものが好ましい。 Examples of the inorganic filler include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina (aluminum oxide), boron nitride, aluminum nitride, and silicon carbide. Among these, silica is preferable because the thermal expansion coefficient can be satisfactorily reduced. Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity. In addition, a thermally conductive filler is preferable because of its high thermal conductivity, and alumina, boron nitride, and aluminum nitride are more preferable. In addition, as an inorganic filler, an electrically insulating thing is preferable.
　無機充填剤の最大粒子径は、好ましくは３０μｍ以下、より好ましくは２０μｍ以下である。３０μｍ以下であると、基板１１ａと半導体チップ１１ｂのギャップを良好に充填できる。一方、無機充填剤の最大粒子径は、好ましくは５μｍ以上である。
　無機充填剤の最大粒子径は、実施例に記載の方法で測定できる。 The maximum particle size of the inorganic filler is preferably 30 μm or less, more preferably 20 μm or less. When the thickness is 30 μm or less, the gap between the substrate 11a and the semiconductor chip 11b can be satisfactorily filled. On the other hand, the maximum particle size of the inorganic filler is preferably 5 μm or more.
The maximum particle size of the inorganic filler can be measured by the method described in the examples.
　無機充填剤の粒度分布において、ピークＡ及びピークＢが少なくとも存在することが好ましい。具体的には、０．０１μｍ～１０μｍの粒径範囲にピークＡが存在し、１μｍ～１００μｍの粒径範囲にピークＢが存在することが好ましい。これにより、ピークＢを形成する無機充填剤の間に、ピークＡを形成する無機充填剤を充填することが可能となり、無機充填剤を高充填できる。 It is preferable that at least peak A and peak B exist in the particle size distribution of the inorganic filler. Specifically, it is preferable that the peak A exists in the particle size range of 0.01 μm to 10 μm and the peak B exists in the particle size range of 1 μm to 100 μm. Thereby, it becomes possible to fill the inorganic filler that forms the peak A between the inorganic fillers that form the peak B, and the inorganic filler can be highly filled.
　ピークＡは０．１μｍ以上の粒径範囲に存在することがより好ましい。ピークＡは１μｍ以下の粒径範囲に存在することがより好ましい。 More preferably, the peak A exists in a particle size range of 0.1 μm or more. More preferably, the peak A exists in a particle size range of 1 μm or less.
　ピークＢは２．５μｍ以上の粒径範囲に存在することがより好ましく、４μｍ以上の粒径範囲に存在することがさらに好ましい。ピークＢは１０μｍ以下の粒径範囲に存在することがより好ましい。 The peak B is more preferably present in the particle size range of 2.5 μm or more, and more preferably in the particle size range of 4 μm or more. More preferably, the peak B exists in a particle size range of 10 μm or less.
　無機充填剤の粒度分布において、ピークＡ及びピークＢ以外のピークが存在してもよい。 In the particle size distribution of the inorganic filler, peaks other than peak A and peak B may exist.
　なお、無機充填剤の粒度分布は、以下の方法で測定できる。 In addition, the particle size distribution of the inorganic filler can be measured by the following method.
　無機充填剤の粒度分布の測定方法
　熱硬化性樹脂シート１２をるつぼに入れ、強熱して熱硬化性樹脂シート１２を灰化させる。得られた灰分を純水中に分散させて１０分間超音波処理し、レーザー回折散乱式粒度分布測定装置（ベックマンコールター社製、「ＬＳ　１３　３２０」；湿式法）を用いて粒度分布（体積基準）を求める。 Method for Measuring Particle Size Distribution of Inorganic Filler Thermosetting resin sheet 12 is put in a crucible and ignited to incinerate thermosetting resin sheet 12. The obtained ash was dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and the particle size distribution (volume basis) using a laser diffraction / scattering particle size distribution analyzer (“LS 13 320” manufactured by Beckman Coulter, Inc .; wet method). )
　無機充填剤は、シランカップリング剤により処理（前処理）されていてもよい。これにより、樹脂との濡れ性を向上でき、無機充填剤の分散性を高めることができる。 The inorganic filler may be treated (pretreated) with a silane coupling agent. Thereby, the wettability with resin can be improved and the dispersibility of an inorganic filler can be improved.
　シランカップリング剤は、分子中に加水分解性基及び有機官能基を有する化合物である。 The silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.
　加水分解性基としては、例えば、メトキシ基、エトキシ基などの炭素数１～６のアルコキシ基、アセトキシ基、２－メトキシエトキシ基などが挙げられる。なかでも、加水分解によって生じるアルコールなどの揮発成分を除去し易いという理由から、メトキシ基が好ましい。 Examples of the hydrolyzable group include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group. Among these, a methoxy group is preferable because it easily removes volatile components such as alcohol generated by hydrolysis.
　有機官能基としては、ビニル基、エポキシ基、スチリル基、メタクリル基、アクリル基、アミノ基、ウレイド基、メルカプト基、スルフィド基、イソシアネート基などが挙げられる。なかでも、エポキシ樹脂、フェノール樹脂と反応し易いという理由から、エポキシ基が好ましい。 Examples of the organic functional group include vinyl group, epoxy group, styryl group, methacryl group, acrylic group, amino group, ureido group, mercapto group, sulfide group, and isocyanate group. Among these, an epoxy group is preferable because it easily reacts with an epoxy resin or a phenol resin.
　シランカップリング剤としては、例えば、ビニルトリメトキシシラン、ビニルトリエトキシシランなどのビニル基含有シランカップリング剤；２－（３，４－エポキシシクロヘキシル）エチルトリメトキシシラン、３－グリシドキシプロピルメチルジメトキシシラン、３－グリシドキシプロピルトリメトキシシラン、３－グリシドキシプロピルメチルジエトキシシラン、３－グリシドキシプロピルトリエトキシシランなどのエポキシ基含有シランカップリング剤；ｐ－スチリルトリメトキシシランなどのスチリル基含有シランカップリング剤；３－メタクリロキシプロピルメチルジメトキシシラン、３－メタクリロキシプロピルトリメトキシシラン、３－メタクリロキシプロピルメチルジエトキシシラン、３－メタクリロキシプロピルトリエトキシシランなどのメタクリル基含有シランカップリング剤；３－アクリロキシプロピルトリメトキシシランなどのアクリル基含有シランカップリング剤；Ｎ－２－（アミノエチル）－３－アミノプロピルメチルジメトキシシラン、Ｎ－２－（アミノエチル）－３－アミノプロピルトリメトキシシラン、３－アミノプロピルトリメトキシシラン、３－アミノプロピルトリエトキシシラン、３－トリエトキシシリル－Ｎ－（１，３－ジメチル－ブチリデン）プロピルアミン、Ｎ－フェニル－３－アミノプロピルトリメトキシシラン、Ｎ－（ビニルベンジル）－２－アミノエチル－３－アミノプロピルトリメトキシシランなどのアミノ基含有シランカップリング剤；３－ウレイドプロピルトリエトキシシランなどのウレイド基含有シランカップリング剤；３－メルカプトプロピルメチルジメトキシシラン、３－メルカプトプロピルトリメトキシシランなどのメルカプト基含有シランカップリング剤；ビス（トリエトキシシリルプロピル）テトラスルフィドなどのスルフィド基含有シランカップリング剤；３－イソシアネートプロピルトリエトキシシランなどのイソシアネート基含有シランカップリング剤などが挙げられる。 Examples of the silane coupling agent include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane; p-styryltrimethoxysilane, etc. Styryl group-containing silane coupling agent: 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltri Methacrylic group-containing silane coupling agents such as toxisilane; Acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N Amino group-containing silane coupling agents such as phenyl-3-aminopropyltrimethoxysilane and N- (vinylbenzyl) -2-aminoethyl-3-aminopropyltrimethoxysilane; ureido such as 3-ureidopropyltriethoxysilane Group-containing silane cup A mercapto group-containing silane coupling agent such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; a sulfide group-containing silane coupling agent such as bis (triethoxysilylpropyl) tetrasulfide; 3-isocyanate Examples include isocyanate group-containing silane coupling agents such as propyltriethoxysilane.
　シランカップリング剤により無機充填剤を処理する方法としては特に限定されず、溶媒中で無機充填剤とシランカップリング剤を混合する湿式法、気相中で無機充填剤とシランカップリング剤を処理させる乾式法などが挙げられる。 The method for treating the inorganic filler with the silane coupling agent is not particularly limited, and is a wet method in which the inorganic filler and the silane coupling agent are mixed in a solvent, and the inorganic filler and the silane coupling agent are treated in a gas phase. And dry method.
　シランカップリング剤の処理量は特に限定されないが、未処理の無機充填剤１００重量部に対して、シランカップリング剤を０．１重量部～１重量部処理することが好ましい。 The treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.1 part by weight to 1 part by weight of the silane coupling agent with respect to 100 parts by weight of the untreated inorganic filler.
　熱硬化性樹脂シート１２中の無機充填剤の含有量は、好ましくは７０重量％以上、より好ましくは７５重量％以上である。７０重量％以上であると、熱硬化性樹脂シート１２の硬化物の熱膨張係数を低下させることが可能で、半導体装置４の耐熱サイクル信頼性を高められる。熱硬化性樹脂シート１２中の無機充填剤の含有量は、好ましくは９０重量％以下、より好ましくは８７重量％以下である。９０重量％以下であると、熱硬化性樹脂シート１２の流動性を向上させることが可能で、半導体チップ１１ｂに対して熱硬化性樹脂シート１２を追従させることができる。また、基板１１ａと半導体チップ１１ｂのギャップを良好に充填できる。 The content of the inorganic filler in the thermosetting resin sheet 12 is preferably 70% by weight or more, more preferably 75% by weight or more. When it is 70% by weight or more, the thermal expansion coefficient of the cured product of the thermosetting resin sheet 12 can be reduced, and the heat resistance cycle reliability of the semiconductor device 4 can be improved. The content of the inorganic filler in the thermosetting resin sheet 12 is preferably 90% by weight or less, more preferably 87% by weight or less. When it is 90% by weight or less, the fluidity of the thermosetting resin sheet 12 can be improved, and the thermosetting resin sheet 12 can follow the semiconductor chip 11b. Further, the gap between the substrate 11a and the semiconductor chip 11b can be satisfactorily filled.
　熱硬化性樹脂シート１２は、硬化促進剤を含むことが好ましい。 The thermosetting resin sheet 12 preferably contains a curing accelerator.
　硬化促進剤としては、エポキシ樹脂とフェノール樹脂の硬化を進行させるものであれば特に限定されず、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレートなどの有機リン系化合物；２－フェニル－４，５－ジヒドロキシメチルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾールなどのイミダゾール系化合物；などが挙げられる。なかでも、良好な保存性が得られるという理由から、２－フェニル－４，５－ジヒドロキシメチルイミダゾールが好ましい。 The curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Of these, 2-phenyl-4,5-dihydroxymethylimidazole is preferred because good storage stability can be obtained.
　硬化促進剤の含有量は、エポキシ樹脂及びフェノール樹脂の合計１００重量部に対して、好ましくは０．１重量部以上、より好ましくは０．５重量部以上である。０．１重量部以上であると、実用的な時間内で硬化が完了する。また、硬化促進剤の含有量は、好ましくは５重量部以下、より好ましくは２重量部以下である。５重量部以下であると、良好な保存性が得られる。 The content of the curing accelerator is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight or more with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin. When it is 0.1 parts by weight or more, curing is completed within a practical time. Further, the content of the curing accelerator is preferably 5 parts by weight or less, more preferably 2 parts by weight or less. When it is 5 parts by weight or less, good storage stability is obtained.
　熱硬化性樹脂シート１２は、熱可塑性樹脂を含んでもよい。 The thermosetting resin sheet 12 may include a thermoplastic resin.
　熱可塑性樹脂としては、天然ゴム、ブチルゴム、イソプレンゴム、クロロプレンゴム、エチレン－酢酸ビニル共重合体、エチレン－アクリル酸共重合体、エチレン－アクリル酸エステル共重合体、ポリブタジエン樹脂、ポリカーボネート樹脂、熱可塑性ポリイミド樹脂、６－ナイロンや６，６－ナイロンなどのポリアミド樹脂、フェノキシ樹脂、アクリル樹脂、ＰＥＴやＰＢＴなどの飽和ポリエステル樹脂、ポリアミドイミド樹脂、フッ素樹脂、スチレン－イソブチレン－スチレンブロック共重合体、メチルメタクリレート－ブタジエン－スチレン共重合体（ＭＢＳ樹脂）などが挙げられる。 Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity. Polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluorine resin, styrene-isobutylene-styrene block copolymer, methyl And methacrylate-butadiene-styrene copolymer (MBS resin).
　熱可塑性樹脂としては、エラストマーが好ましい。エポキシ樹脂への分散性という理由から、ゴム成分からなるコア層とアクリル樹脂からなるシェル層とを有するコアシェル型アクリル樹脂が特に好ましい。 An elastomer is preferable as the thermoplastic resin. A core-shell type acrylic resin having a core layer made of a rubber component and a shell layer made of an acrylic resin is particularly preferable because of dispersibility in an epoxy resin.
　コア層のゴム成分は特に限定されず、例えば、ブタジエンゴム、イソプレンゴム、クロロプレンゴム、アクリルゴム、シリコンゴムなどが挙げられる。 The rubber component of the core layer is not particularly limited, and examples thereof include butadiene rubber, isoprene rubber, chloroprene rubber, acrylic rubber, and silicon rubber.
　コアシェル型アクリル樹脂の平均粒子径は、好ましくは０．１μｍ以上、より好ましくは０．５μｍ以上である。０．１μｍ以上であると、分散性が良好である。コアシェル型アクリル樹脂の平均粒子径は、好ましくは２００μｍ以下、より好ましくは１００μｍ以下である。２００μｍ以下であると、作製したシートの平坦性が良好である。
　なお、平均粒子径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。 The average particle diameter of the core-shell type acrylic resin is preferably 0.1 μm or more, more preferably 0.5 μm or more. Dispersibility is favorable in it being 0.1 micrometer or more. The average particle diameter of the core-shell type acrylic resin is preferably 200 μm or less, more preferably 100 μm or less. The flatness of the produced sheet | seat is favorable in it being 200 micrometers or less.
The average particle size can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
　熱硬化性樹脂シート１２中の熱可塑性樹脂の含有量は、１重量％以上が好ましく、２重量％以上がより好ましい。１重量％以上であると、充分な硬化物強度が得られる。熱硬化性樹脂シート１２中の熱可塑性樹脂の含有量は、２０重量％以下が好ましく、１０重量％以下がより好ましい。２０重量％以下であると、硬化物の線膨張係数が小さく、かつ低吸水性が得られやすい。 The content of the thermoplastic resin in the thermosetting resin sheet 12 is preferably 1% by weight or more, and more preferably 2% by weight or more. When it is 1% by weight or more, sufficient cured product strength can be obtained. The content of the thermoplastic resin in the thermosetting resin sheet 12 is preferably 20% by weight or less, and more preferably 10% by weight or less. When it is 20% by weight or less, the linear expansion coefficient of the cured product is small, and low water absorption is easily obtained.
　熱硬化性樹脂シート１２は、前記成分以外にも、封止樹脂の製造に一般に使用される配合剤、例えば、難燃剤成分、顔料などを適宜含有してよい。 The thermosetting resin sheet 12 may appropriately contain, in addition to the above-described components, a compounding agent generally used for producing a sealing resin, for example, a flame retardant component, a pigment, and the like.
　熱硬化性樹脂シート１２の製造方法は特に限定されない。例えば、熱硬化性樹脂シート１２を塗工方式で製造することができる。例えば、前記各成分を含有する接着剤組成物溶液を作製し、接着剤組成物溶液を基材セパレータ上に所定厚みとなる様に塗布して塗布膜を形成した後、塗布膜を乾燥させることで、熱硬化性樹脂シート１２を製造できる。 The manufacturing method of the thermosetting resin sheet 12 is not particularly limited. For example, the thermosetting resin sheet 12 can be manufactured by a coating method. For example, an adhesive composition solution containing each of the components described above is prepared, and the adhesive composition solution is applied on a base separator to a predetermined thickness to form a coating film, and then the coating film is dried. Thus, the thermosetting resin sheet 12 can be manufactured.
　接着剤組成物溶液に用いる溶媒としては特に限定されないが、前記各成分を均一に溶解、混練又は分散できる有機溶媒が好ましい。例えば、ジメチルホルムアミド、ジメチルアセトアミド、Ｎ-メチルピロリドン、アセトン、メチルエチルケトン、シクロヘキサノンなどのケトン系溶媒、トルエン、キシレンなどが挙げられる。 The solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.
　基材セパレータとしては、ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレン、ポリプロピレンや、フッ素系剥離剤、長鎖アルキルアクリレート系剥離剤などの剥離剤により表面コートされたプラスチックフィルムや紙などが使用可能である。接着剤組成物溶液の塗布方法としては、例えば、ロール塗工、スクリーン塗工、グラビア塗工などが挙げられる。また、塗布膜の乾燥条件は特に限定されず、例えば、乾燥温度７０～１６０℃、乾燥時間１～５分間で行うことができる。 As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. The drying conditions for the coating film are not particularly limited, and for example, the drying can be performed at a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.
　熱硬化性樹脂シート１２の製造方法について、前記各成分（例えば、エポキシ樹脂、フェノール樹脂、無機充填剤及び硬化促進剤など）を混練して得られる混練物をシート状に塑性加工する方法も好ましい。これにより、無機充填剤を高充填でき、熱膨張係数を低く設計できる。 About the manufacturing method of the thermosetting resin sheet 12, the method of plastically processing the kneaded material obtained by kneading each said component (for example, an epoxy resin, a phenol resin, an inorganic filler, a hardening accelerator, etc.) in a sheet form is also preferable. . Thereby, the inorganic filler can be highly filled and the thermal expansion coefficient can be designed low.
　具体的には、エポキシ樹脂、フェノール樹脂、無機充填剤及び硬化促進剤などをミキシングロール、加圧式ニーダー、押出機などの公知の混練機で溶融混練することにより混練物を調製し、得られた混練物をシート状に塑性加工する。混練条件として、温度の上限は、１４０℃以下が好ましく、１３０℃以下がより好ましい。温度の下限は、上述の各成分の軟化点以上であることが好ましく、例えば３０℃以上、好ましくは５０℃以上である。混練の時間は、好ましくは１～３０分である。また、混練は、減圧条件下（減圧雰囲気下）で行うことが好ましく、減圧条件下の圧力は、例えば、１×１０－４～０．１ｋｇ／ｃｍ２である。 Specifically, a kneaded material was prepared by melting and kneading an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and the like with a known kneader such as a mixing roll, a pressure kneader, and an extruder. The kneaded product is plastically processed into a sheet. As kneading conditions, the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less. The lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher. The kneading time is preferably 1 to 30 minutes. The kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 × 10 −4 to 0.1 kg / cm 2 .
　溶融混練後の混練物は、冷却することなく高温状態のままで塑性加工することが好ましい。塑性加工方法としては特に制限されず、平板プレス法、Ｔダイ押出法、スクリューダイ押出法、ロール圧延法、ロール混練法、インフレーション押出法、共押出法、カレンダー成形法などが挙げられる。塑性加工温度としては上述の各成分の軟化点以上が好ましく、エポキシ樹脂の熱硬化性および成形性を考慮すると、例えば４０～１５０℃、好ましくは５０～１４０℃、さらに好ましくは７０～１２０℃である。 The kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling. The plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method. The plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
　熱硬化性樹脂シート１２の厚みは特に限定されないが、好ましくは１００μｍ以上、より好ましくは１５０μｍ以上である。また、熱硬化性樹脂シート１２の厚みは、好ましくは２０００μｍ以下、より好ましくは１０００μｍ以下である。上記範囲内であると、半導体チップ１１ｂを良好に封止できる。 The thickness of the thermosetting resin sheet 12 is not particularly limited, but is preferably 100 μm or more, more preferably 150 μm or more. The thickness of the thermosetting resin sheet 12 is preferably 2000 μm or less, more preferably 1000 μm or less. Within the above range, the semiconductor chip 11b can be satisfactorily sealed.
　熱硬化性樹脂シート１２は、単層構造であってもよいし、２以上の熱硬化性樹脂層を積層した多層構造であってもよい。しかしながら、層間剥離のおそれがなく、シート厚の均一性が高いという理由から、単層構造が好ましい。 The thermosetting resin sheet 12 may have a single layer structure or a multilayer structure in which two or more thermosetting resin layers are laminated. However, a single layer structure is preferred because there is no risk of delamination and the sheet thickness is highly uniform.
　（変形例１）
　実施形態１では、上型２００２が中部２００２ａ及び外周部２００２ｂを備える。しかし、変形例１では、下型２００１が、中部及び中部の外周に配置され、中部の厚み方向に延びた外周部を備える。 (Modification 1)
In the first embodiment, the upper mold 2002 includes a middle part 2002a and an outer peripheral part 2002b. However, in the first modification, the lower mold 2001 is disposed on the outer periphery of the middle part and the middle part, and includes an outer circumferential part extending in the thickness direction of the middle part.
　（変形例２）
　実施形態１では、積層物２０１を下型２００１上に配置する。しかし、変形例２では、チップ実装基板１１を下型２００１上に配置し、次いで上型２００２に熱硬化性樹脂シート１２を固定する。固定方法としては、例えば、上型２００２に熱硬化性樹脂シート１２を吸着させる方法などがある。 (Modification 2)
In the first embodiment, the laminate 201 is disposed on the lower mold 2001. However, in Modification 2, the chip mounting substrate 11 is disposed on the lower mold 2001, and then the thermosetting resin sheet 12 is fixed to the upper mold 2002. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
　（変形例３）
　実施形態１では、積層物２０１を下型２００１上に配置する。しかし、変形例３では、上型２００２に熱硬化性樹脂シート１２を固定し、次いでチップ実装基板１１を下型２００１上に配置する。固定方法としては、例えば、上型２００２に熱硬化性樹脂シート１２を吸着させる方法などがある。 (Modification 3)
In the first embodiment, the laminate 201 is disposed on the lower mold 2001. However, in Modification 3, the thermosetting resin sheet 12 is fixed to the upper mold 2002, and then the chip mounting substrate 11 is disposed on the lower mold 2001. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
　以上のとおり、実施形態１の半導体装置４の製造方法は、積層物２０１を加熱下で加圧することにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する工程を含む。半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する工程では、圧縮成型用の金型２００を用いて積層物２０１を加熱下で加圧する。 As described above, in the method for manufacturing the semiconductor device 4 according to the first embodiment, the gap between the substrate 11a and the semiconductor chip 11b is covered while the semiconductor chip 11b is covered with the thermosetting resin sheet 12 by pressurizing the laminate 201 under heating. The step of filling the thermosetting resin sheet 12 is included. In the process of filling the gap between the substrate 11a and the semiconductor chip 11b with the thermosetting resin sheet 12 while covering the semiconductor chip 11b with the thermosetting resin sheet 12, the laminate 201 is heated using the compression molding die 200. Pressurize below.
　実施形態１の半導体装置４の製造方法は、封止体２を加熱することにより、硬化体３を形成する工程、及び硬化体３をダイシングすることにより、半導体装置４を得る工程などをさらに含む。 The manufacturing method of the semiconductor device 4 of the first embodiment further includes a step of forming the cured body 3 by heating the sealing body 2 and a step of obtaining the semiconductor device 4 by dicing the cured body 3. .
　［実施形態２］ [Embodiment 2]
　図６に示すように、積層物２０２を下型２００１上に配置する。積層物２０２は、チップ実装ウェハ６１及びチップ実装ウェハ６１上に配置された熱硬化性樹脂シート１２を備える。 As shown in FIG. 6, the laminate 202 is placed on the lower mold 2001. The laminate 202 includes a chip mounting wafer 61 and the thermosetting resin sheet 12 disposed on the chip mounting wafer 61.
　チップ実装ウェハ６１は、半導体ウェハ６１ａ及び半導体ウェハ６１ａにフリップチップ実装（フリップチップボンディング）された半導体チップ６１ｂを備える。 The chip mounting wafer 61 includes a semiconductor wafer 61a and a semiconductor chip 61b flip-chip mounted (flip chip bonding) on the semiconductor wafer 61a.
　半導体ウェハ６１ａは、電極６０１ａ、及び電極６０１ａと電気的に接続された貫通電極６０１ｂを備える。すなわち、半導体ウェハ６１ａは、半導体ウェハ６１ａの厚み方向に延びる貫通電極６０１ｂ、及び貫通電極６０１ｂと電気的に接続された電極６０１ａを備える。半導体ウェハ６１ａは、電極６０１ａが設けられた回路形成面、及び回路形成面に対向した面で両面を定義できる。 The semiconductor wafer 61a includes an electrode 601a and a through electrode 601b electrically connected to the electrode 601a. That is, the semiconductor wafer 61a includes a through electrode 601b extending in the thickness direction of the semiconductor wafer 61a and an electrode 601a electrically connected to the through electrode 601b. Both sides of the semiconductor wafer 61a can be defined by a circuit forming surface provided with the electrode 601a and a surface facing the circuit forming surface.
　半導体チップ６１ｂは回路形成面（活性面）を備える。半導体チップ６１ｂの回路形成面上には、バンプ６２が配置されている。 The semiconductor chip 61b has a circuit formation surface (active surface). Bumps 62 are arranged on the circuit formation surface of the semiconductor chip 61b.
　半導体チップ６１ｂと半導体ウェハ６１ａは、バンプ６２を介して電気的に接続されている。 The semiconductor chip 61 b and the semiconductor wafer 61 a are electrically connected via bumps 62.
　下型２００１及び上型２００２はあらかじめ加熱されている。下型２００１及び上型２００２の好適な温度は、実施形態１で説明した温度と同様である。 The lower mold 2001 and the upper mold 2002 are heated in advance. Suitable temperatures of the lower mold 2001 and the upper mold 2002 are the same as those described in the first embodiment.
　図７に示すように、金型２００を閉じることにより、積層物２０２を加圧下で加熱して、
半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填する。これにより、封止体７を得る。 As shown in FIG. 7, by closing the mold 200, the laminate 202 is heated under pressure,
While covering the semiconductor chip 61b with the thermosetting resin sheet 12, the gap between the semiconductor wafer 61a and the semiconductor chip 61b is filled with the thermosetting resin sheet 12. Thereby, the sealing body 7 is obtained.
　好適な加熱時間は、実施形態１で説明した加熱時間と同様である。好適なキャビティ内圧力は、実施形態１で説明したキャビティ内圧力と同様である。 Suitable heating time is the same as the heating time described in the first embodiment. A suitable intracavity pressure is the same as the intracavity pressure described in the first embodiment.
　封止体７は、チップ実装ウェハ６１及びチップ実装ウェハ６１上に配置された樹脂層７１を備える。樹脂層７１は、半導体ウェハ６１ａと半導体チップ６１ｂの間に挟まれたアンダーフィル部７１ａ、及びアンダーフィル部７１ａの周辺に配置された封止部７１ｂを備える。半導体チップ６１ｂは、封止部７１ｂにより覆われている。 The sealing body 7 includes a chip mounting wafer 61 and a resin layer 71 disposed on the chip mounting wafer 61. The resin layer 71 includes an underfill portion 71a sandwiched between the semiconductor wafer 61a and the semiconductor chip 61b, and a sealing portion 71b disposed around the underfill portion 71a. The semiconductor chip 61b is covered with a sealing portion 71b.
　キャビティに封止体７を保持することにより、樹脂層７１を硬化させて、硬化体８を得る。封止体７を保持する温度、保持時間は適宜設定できる。 By holding the sealing body 7 in the cavity, the resin layer 71 is cured and the cured body 8 is obtained. The temperature and holding time for holding the sealing body 7 can be set as appropriate.
　図８に示すように、硬化体８は、チップ実装ウェハ６１及びチップ実装ウェハ６１上に配置された硬化層８１を備える。硬化層８１は、半導体ウェハ６１ａと半導体チップ６１ｂの間に挟まれた接続保護部８１ａ、及び接続保護部８１ａの周辺に配置されたチップ保護部８１ｂを備える。半導体チップ６１ｂは、チップ保護部８１ｂにより覆われている。 As shown in FIG. 8, the cured body 8 includes a chip mounting wafer 61 and a hardened layer 81 disposed on the chip mounting wafer 61. The hardened layer 81 includes a connection protection part 81a sandwiched between the semiconductor wafer 61a and the semiconductor chip 61b, and a chip protection part 81b disposed around the connection protection part 81a. The semiconductor chip 61b is covered with a chip protection part 81b.
　硬化体８は、半導体ウェハ６１ａが配置されたウェハ面、及びウェハ面に対向した硬化面で両面を定義できる。硬化面には、硬化層８１が配置されている。 Both sides of the cured body 8 can be defined by a wafer surface on which the semiconductor wafer 61a is disposed and a cured surface facing the wafer surface. A cured layer 81 is disposed on the cured surface.
　図９に示すように、硬化体８の硬化層８１を研削する。 As shown in FIG. 9, the hardened layer 81 of the hardened body 8 is ground.
　図１０に示すように、硬化体８の半導体ウェハ６１ａを研削して、貫通電極６０１ｂを露出させる。すなわち、ウェハ面を研削して得られた研削面８２では、貫通電極６０１ｂが露出している。 As shown in FIG. 10, the semiconductor wafer 61a of the cured body 8 is ground to expose the through electrode 601b. That is, the through electrode 601b is exposed on the ground surface 82 obtained by grinding the wafer surface.
　図１１に示すように、セミアディティブ法などを利用して、研削面８２上に再配線層８３を形成して、再配線体８４を形成する。再配線層８３は、再配線８３ａを備える。次いで、再配線層８３上にバンプ８５を形成する。バンプ８５は再配線８３ａ、貫通電極６０１ｂ、電極６０１ａ及びバンプ６２を介して半導体チップ６１ｂと電気的に接続している。 As shown in FIG. 11, the rewiring layer 83 is formed on the grinding surface 82 by using a semi-additive method or the like, and the rewiring body 84 is formed. The rewiring layer 83 includes a rewiring 83a. Next, bumps 85 are formed on the rewiring layer 83. The bump 85 is electrically connected to the semiconductor chip 61b through the rewiring 83a, the through electrode 601b, the electrode 601a, and the bump 62.
　図１２に示すように、再配線体８４を個片化（ダイシング）して、半導体装置９を得る。 As shown in FIG. 12, the rewiring body 84 is separated (diced) to obtain the semiconductor device 9.
　（変形例１）
　実施形態２では、上型２００２が中部２００２ａ及び外周部２００２ｂを備える。しかし、変形例１では、下型２００１が、中部及び中部の外周に配置され、中部の厚み方向に延びた外周部を備える。 (Modification 1)
In the second embodiment, the upper mold 2002 includes a middle part 2002a and an outer peripheral part 2002b. However, in the first modification, the lower mold 2001 is disposed on the outer periphery of the middle part and the middle part, and includes an outer circumferential part extending in the thickness direction of the middle part.
　（変形例２）
　実施形態２では、積層物２０２を下型２００１上に配置する。しかし、変形例２では、チップ実装ウェハ６１を下型２００１上に配置し、次いで上型２００２に熱硬化性樹脂シート１２を固定する。固定方法としては、例えば、上型２００２に熱硬化性樹脂シート１２を吸着させる方法などがある。 (Modification 2)
In the second embodiment, the laminate 202 is disposed on the lower mold 2001. However, in Modification 2, the chip mounting wafer 61 is disposed on the lower mold 2001, and then the thermosetting resin sheet 12 is fixed to the upper mold 2002. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
　（変形例３）
　実施形態２では、積層物２０２を下型２００１上に配置する。しかし、変形例３では、上型２００２に熱硬化性樹脂シート１２を固定し、次いでチップ実装ウェハ６１を下型２００１上に配置する。固定方法としては、例えば、上型２００２に熱硬化性樹脂シート１２を吸着させる方法などがある。 (Modification 3)
In the second embodiment, the laminate 202 is disposed on the lower mold 2001. However, in Modification 3, the thermosetting resin sheet 12 is fixed to the upper mold 2002, and then the chip mounting wafer 61 is disposed on the lower mold 2001. Examples of the fixing method include a method of adsorbing the thermosetting resin sheet 12 to the upper mold 2002.
　（変形例４）
　実施形態２では、硬化体８の硬化層８１を研削するが、変形例４では、硬化層８１を研削しない。 (Modification 4)
In the second embodiment, the hardened layer 81 of the hardened body 8 is ground, but in the fourth modification, the hardened layer 81 is not ground.
　以上のとおり、実施形態２の半導体装置９の製造方法は、積層物２０２を加熱下で加圧することにより、半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填する工程を含む。半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填する工程では、圧縮成型用の金型２００を用いて積層物２０２を加熱下で加圧する。 As described above, in the method for manufacturing the semiconductor device 9 according to the second embodiment, the stacked body 202 is pressed under heat, so that the semiconductor chip 61b is covered with the thermosetting resin sheet 12, and the semiconductor wafer 61a and the semiconductor chip 61b are covered. A step of filling the gap with the thermosetting resin sheet 12 is included. In the step of filling the gap between the semiconductor wafer 61a and the semiconductor chip 61b with the thermosetting resin sheet 12 while covering the semiconductor chip 61b with the thermosetting resin sheet 12, the laminate 202 is formed using the compression mold 200. Pressurize under heating.
　実施形態２の半導体装置９の製造方法は、封止体７を加熱することにより硬化体８を形成する工程、硬化体８に再配線層８３を形成することにより再配線体８４を形成する工程、及び再配線体８４をダイシングすることにより半導体装置９を得る工程などをさらに含む。 The manufacturing method of the semiconductor device 9 according to the second embodiment includes a step of forming the cured body 8 by heating the sealing body 7 and a step of forming the rewiring body 84 by forming the rewiring layer 83 on the cured body 8. And a step of obtaining the semiconductor device 9 by dicing the rewiring body 84.
　［実施形態３］
　まず、真空加熱接合装置（以下、真空熱加圧装置ともいう）について説明する。真空加熱接合装置としては、例えば、特開２０１３－５２４２４号公報に記載の真空加熱接合装置などを好適に使用できる。 [Embodiment 3]
First, a vacuum heat bonding apparatus (hereinafter also referred to as a vacuum heat press apparatus) will be described. As the vacuum heat bonding apparatus, for example, a vacuum heat bonding apparatus described in JP2013-52424A can be suitably used.
　（真空加熱接合装置）
　図１３に示すように、真空熱加圧装置においては、基台１０１上に加圧シリンダ下板１０２が配置され、加圧シリンダ下板１０２の上にはスライド移動テーブル１０３がスライドシリンダ１０４によって真空熱加圧装置内外を移動可能に配置されている。スライド移動テーブル１０３の上方には、下ヒータ板１０５が配置されており、下ヒータ板１０５の上面には下板部材１０６が配置され、下板部材１０６の上面にはステージ（以下、基板置台ともいう）１０７が配置されている。 (Vacuum heating bonding equipment)
As shown in FIG. 13, in the vacuum heat pressurizing apparatus, a pressurizing cylinder lower plate 102 is disposed on a base 101, and a slide moving table 103 is vacuumed by a slide cylinder 104 on the pressurizing cylinder lower plate 102. It is arranged so as to be movable inside and outside the heat and pressure apparatus. A lower heater plate 105 is disposed above the slide moving table 103, a lower plate member 106 is disposed on the upper surface of the lower heater plate 105, and a stage (hereinafter also referred to as a substrate mounting table) is disposed on the upper surface of the lower plate member 106. 107) is arranged.
　加圧シリンダ下板１０２の上には複数の支柱１０８が配置立設され、支柱１０８の上端部には加圧シリンダ上板１０９が固定されている。加圧シリンダ上板１０９の下方には支柱１０８を通して中間移動部材（中間部材）１１０が配置されており、中間移動部材１１０の下方には断熱板を介して上ヒータ板１１１が固定され、上ヒータ板１１１の下面の外周部には上枠部材１１２が気密に固定され下方に延びている。また、上ヒータ板１１１の下面で上枠部材１１２の内方には内方枠体１１３が固定されている。また、上ヒータ板１１１の下面上で内方枠体１１３の内方には平板１１７が固定されている。 A plurality of support columns 108 are arranged and erected on the pressure cylinder lower plate 102, and a pressure cylinder upper plate 109 is fixed to the upper end portion of the support column 108. An intermediate moving member (intermediate member) 110 is disposed below the pressure cylinder upper plate 109 through a support column 108, and an upper heater plate 111 is fixed below the intermediate moving member 110 via a heat insulating plate. An upper frame member 112 is airtightly fixed to the outer peripheral portion of the lower surface of the plate 111 and extends downward. Further, an inner frame 113 is fixed to the inner surface of the upper frame member 112 on the lower surface of the upper heater plate 111. A flat plate 117 is fixed on the lower surface of the upper heater plate 111 inside the inner frame 113.
　内方枠体１１３は、下端部の枠状押え部１１３ａとそれから上方に延びるロッド１１３ｂとを備え、ロッド１１３ｂの周りにはスプリングが配置され、ロッド１１３ｂは上ヒータ板１１１の下面に断熱固定されている。枠状押え部１１３ａはロッド１１３ｂに対してスプリングにより下方に付勢されている。枠状押え部１１３ａは、ステージ１０７との間にフィルム１３を気密に保持できる。 The inner frame body 113 includes a frame-shaped pressing portion 113a at the lower end portion and a rod 113b extending upward therefrom, a spring is disposed around the rod 113b, and the rod 113b is heat-insulated and fixed to the lower surface of the upper heater plate 111. ing. The frame-shaped presser portion 113a is biased downward by a spring with respect to the rod 113b. The frame-shaped presser portion 113 a can hold the film 13 in an airtight manner with the stage 107.
　加圧シリンダ上板１０９の上面には加圧シリンダ１１４が配置され、加圧シリンダ１１４のシリンダロッド１１５は加圧シリンダ上板１０９を通って中間移動部材１１０の上面に固定され、加圧シリンダ１１４によって、中間移動部材１１０と上ヒータ板１１１と上枠部材１１２とが上下に一体的に移動可能となっている。図１において、Ｓは、加圧シリンダ１１４による中間移動部材１１０と上ヒータ板１１１と上枠部材１１２の下方の移動を規制するストッパーであり、下降して加圧シリンダ１１４本体の上面のストッパープレートに当接するようになっている。加圧シリンダ１１４としては、油圧シリンダ、空圧シリンダ、サーボシリンダなどが使用される。 A pressure cylinder 114 is disposed on the upper surface of the pressure cylinder upper plate 109, and the cylinder rod 115 of the pressure cylinder 114 passes through the pressure cylinder upper plate 109 and is fixed to the upper surface of the intermediate moving member 110. Thus, the intermediate moving member 110, the upper heater plate 111, and the upper frame member 112 can be moved integrally in the vertical direction. In FIG. 1, S is a stopper that restricts the downward movement of the intermediate moving member 110, the upper heater plate 111, and the upper frame member 112 by the pressure cylinder 114. The stopper plate descends and stops on the upper surface of the main body of the pressure cylinder 114. It comes to contact with. As the pressurizing cylinder 114, a hydraulic cylinder, a pneumatic cylinder, a servo cylinder, or the like is used.
　加圧シリンダ１１４が上枠部材１１２を引き上げた状態から下降させ、上枠部材１１２の下端部が下板部材１０６の外周部端部に設けた段差部に気密に摺動し、そこで一旦加圧シリンダ１１４を停止させる。これにより、上ヒータ板１１１、上枠部材１１２及び下板部材１０６を備える格納容器が形成される。なお、上枠部材１１２には格納容器の内部（以下、チェンバーともいう）を真空引きし、加圧するための真空・加圧口１１６が設けられている。 The pressurizing cylinder 114 is lowered from the state where the upper frame member 112 is pulled up, and the lower end portion of the upper frame member 112 slides in an airtight manner on the stepped portion provided at the outer peripheral end portion of the lower plate member 106, and is once pressurized there. The cylinder 114 is stopped. Thus, a storage container including the upper heater plate 111, the upper frame member 112, and the lower plate member 106 is formed. The upper frame member 112 is provided with a vacuum / pressure port 116 for evacuating and pressurizing the inside of the storage container (hereinafter also referred to as a chamber).
　チェンバーを開いた状態で、スライドシリンダ１０４によって、スライド移動テーブル１０３、下ヒータ板１０５、下板部材１０６及びステージ１０７を一体として外部に引き出すことができる。これらを引き出した状態で、ステージ１０７の上に、積層体１などを配置できる。 With the chamber open, the slide cylinder 104 can pull out the slide moving table 103, the lower heater plate 105, the lower plate member 106, and the stage 107 as a unit. The laminated body 1 etc. can be arrange | positioned on the stage 107 in the state pulled out.
　（半導体装置４の製造方法）
　次に、半導体装置４の製造方法について説明する。 (Method for Manufacturing Semiconductor Device 4)
Next, a method for manufacturing the semiconductor device 4 will be described.
　図１４に示すように、積層体１をステージ１０７上に配置する。積層体１は、チップ実装基板１１、チップ実装基板１１上に配置された熱硬化性樹脂シート１２及び熱硬化性樹脂シート１２上に配置されたフィルム１３を備える。 As shown in FIG. 14, the laminated body 1 is placed on the stage 107. The laminate 1 includes a chip mounting substrate 11, a thermosetting resin sheet 12 disposed on the chip mounting substrate 11, and a film 13 disposed on the thermosetting resin sheet 12.
　熱硬化性樹脂シート１２の外形寸法は、半導体チップ１１ｂを封止可能な大きさである。 The outer dimension of the thermosetting resin sheet 12 is a size capable of sealing the semiconductor chip 11b.
　フィルム１３は、熱硬化性樹脂シート１２と接する中央部１３ａ及び中央部１３ａの周辺に配置された周辺部１３ｂを備える。フィルム１３の外形寸法は、チップ実装基板１１及び熱硬化性樹脂シート１２を覆うことが可能な大きさである。 The film 13 includes a central portion 13a that is in contact with the thermosetting resin sheet 12 and a peripheral portion 13b that is disposed around the central portion 13a. The outer dimension of the film 13 is a size that can cover the chip mounting substrate 11 and the thermosetting resin sheet 12.
　フィルム１３としては特に限定されず、例えば、フッ素系フィルム、ポリオレフィン系フィルム、ポリエチレンテレフタレート（ＰＥＴ）フィルムなどが挙げられる。 The film 13 is not particularly limited, and examples thereof include a fluorine film, a polyolefin film, and a polyethylene terephthalate (PET) film.
　フィルム１３の２３℃における引張破断伸びは好ましくは３０％以上、より好ましくは４０％以上である。３０％以上であると、成型時の凹凸追従性が良い。フィルム１３の２３℃における引張破断伸びは好ましくは３００％以下、より好ましくは１００％以下である。３００％以下であると、剥離作業がし易い。
　引張破断伸びは、ＡＳＴＭ　Ｄ８８２に従って測定できる。 The tensile elongation at break of the film 13 at 23 ° C. is preferably 30% or more, more preferably 40% or more. When it is 30% or more, the unevenness followability at the time of molding is good. The tensile elongation at break of the film 13 at 23 ° C. is preferably 300% or less, more preferably 100% or less. If it is 300% or less, peeling work is easy.
The tensile elongation at break can be measured according to ASTM D882.
　フィルム１３の軟化温度は特に限定されないが、好ましくは８０℃以下、より好ましくは６０℃以下である。８０℃以下であると、成型時の凹凸追従性が良い。また、フィルム１３の軟化温度は、好ましくは０℃以上である。
　なお、引っ張り弾性率が３００ＭＰａとなる温度を軟化温度とする。 Although the softening temperature of the film 13 is not specifically limited, Preferably it is 80 degrees C or less, More preferably, it is 60 degrees C or less. When the temperature is 80 ° C. or less, the unevenness followability at the time of molding is good. The softening temperature of the film 13 is preferably 0 ° C. or higher.
The temperature at which the tensile elastic modulus is 300 MPa is defined as the softening temperature.
　フィルム１３の厚さは特に限定されないが、好ましくは１０μｍ～２００μｍである。 The thickness of the film 13 is not particularly limited, but is preferably 10 μm to 200 μm.
　ステージ１０７はあらかじめ加熱されている。ステージ１０７の温度は、好ましくは７０℃以上、より好ましくは８０℃以上、さらに好ましくは８５℃以上である。７０℃以上であると、熱硬化性樹脂シート１２を溶融させ、流動させることが可能である。ステージ１０７の温度は好ましくは１２０℃以下、より好ましくは１１０℃以下である。１２０℃以下であると、熱硬化性樹脂シート１２の熱硬化の進行を抑制することが可能で、粘度上昇を抑えることができる。 The stage 107 has been heated in advance. The temperature of the stage 107 is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, and further preferably 85 ° C. or higher. When it is 70 ° C. or higher, the thermosetting resin sheet 12 can be melted and fluidized. The temperature of the stage 107 is preferably 120 ° C. or lower, more preferably 110 ° C. or lower. When the temperature is 120 ° C. or lower, the progress of thermosetting of the thermosetting resin sheet 12 can be suppressed, and an increase in viscosity can be suppressed.
　図１５に示すように、上ヒータ板１１１及び上枠部材１１２を下降させ、上枠部材１１２の下端部を下板部材１０６の外縁部に沿って気密に摺動させ、上ヒータ板１１１、上枠部材１１２及び下板部材１０６によって気密に囲われたチェンバーを形成する。チェンバーを形成した段階で、上ヒータ板１１１及び上枠部材１１２の下降を停止する。 As shown in FIG. 15, the upper heater plate 111 and the upper frame member 112 are lowered, and the lower end portion of the upper frame member 112 is slid in an airtight manner along the outer edge portion of the lower plate member 106. A chamber hermetically surrounded by the frame member 112 and the lower plate member 106 is formed. At the stage where the chamber is formed, the lowering of the upper heater plate 111 and the upper frame member 112 is stopped.
　次いで、真空引きを行い、チェンバー内を減圧状態とする。チェンバー内の圧力は、好ましくは５００Ｐａ以下である。 Next, evacuation is performed, and the chamber is depressurized. The pressure in the chamber is preferably 500 Pa or less.
　図１６に示すように、枠状押え部１１３ａを下降させることにより、フィルム１３の外周部１３ｂをステージ１０７に押さえつけて、密閉容器１２１を形成する。密閉容器１２１は、ステージ１０７及びフィルム１３を備える。密閉容器１２１の内部には、チップ実装基板１１及びチップ実装基板１１上に配置された熱硬化性樹脂シート１２が配置されている。なお、チェンバー内を減圧状態にした後に密閉容器１２１を形成するため、密閉容器１２１の内部及び外部は減圧状態である。 As shown in FIG. 16, the outer periphery 13 b of the film 13 is pressed against the stage 107 by lowering the frame-shaped presser 113 a to form the sealed container 121. The sealed container 121 includes a stage 107 and a film 13. Inside the airtight container 121, the chip mounting substrate 11 and the thermosetting resin sheet 12 disposed on the chip mounting substrate 11 are disposed. In addition, in order to form the airtight container 121 after making the inside of a chamber into the pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
　図１７に示すように、真空・加圧口１１６を開放することにより、チェンバー内の圧力を大気圧にする。すなわち、密閉容器１２１の外部の圧力を大気圧にする。 As shown in FIG. 17, the pressure in the chamber is set to atmospheric pressure by opening the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
　図１８に示すように、真空・加圧口１１６にガスを導入することによりチェンバー内の圧力を高める。すなわち、密閉容器１２１の外部の圧力を大気圧よりも高める。これにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する。これにより、封止体２を得る。 As shown in FIG. 18, the pressure in the chamber is increased by introducing a gas into the vacuum / pressurizing port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure. Thereby, the thermosetting resin sheet 12 is filled in the gap between the substrate 11a and the semiconductor chip 11b while covering the semiconductor chip 11b with the thermosetting resin sheet 12. Thereby, the sealing body 2 is obtained.
　ガスとしては特に限定されず、空気、窒素などが挙げられる。 The gas is not particularly limited, and examples thereof include air and nitrogen.
　ガス導入後の密閉容器１２１の外部の圧力は、好ましくは０．５ＭＰａ以上、より好ましくは０．６ＭＰａ以上、さらに好ましくは０．７ＭＰａ以上である。密閉容器１２１の外部の圧力の上限は特に限定されないが、好ましくは０．９９ＭＰａ以下、より好ましくは０．９ＭＰａ以下である。 The pressure outside the sealed container 121 after the gas introduction is preferably 0.5 MPa or more, more preferably 0.6 MPa or more, and further preferably 0.7 MPa or more. The upper limit of the pressure outside the sealed container 121 is not particularly limited, but is preferably 0.99 MPa or less, more preferably 0.9 MPa or less.
　封止体２は、フィルム１３と接している。 Sealing body 2 is in contact with film 13.
　図１９に示すように、封止体２の横にスペーサー１３１を配置する。 As shown in FIG. 19, a spacer 131 is disposed beside the sealing body 2.
　図２０に示すように、平板１１７をスペーサー１３１に当たるまで下降させることにより、封止体２をプレスし、封止体２の厚みを調整する。これにより、封止体２の厚みを均一化することができる。平板１１７で封止体２を押す際の圧力としては、０．１ＭＰａ～８０ＭＰａが好ましい。 As shown in FIG. 20, the sealing body 2 is pressed and the thickness of the sealing body 2 is adjusted by lowering the flat plate 117 until it hits the spacer 131. Thereby, the thickness of the sealing body 2 can be made uniform. The pressure when pressing the sealing body 2 with the flat plate 117 is preferably 0.1 MPa to 80 MPa.
　次いで、フィルム１３を取り除く。 Next, the film 13 is removed.
　次いで、封止部２１ｂのうち基板１１ａから側方にはみ出した部分を切り離す。 Next, the portion of the sealing portion 21b that protrudes laterally from the substrate 11a is cut off.
　図２１に示すように、封止体２を加熱することで樹脂層２１を硬化させて、硬化体３を形成する。 As shown in FIG. 21, the resin layer 21 is cured by heating the sealing body 2 to form the cured body 3.
　加熱温度は、好ましくは１００℃以上、より好ましくは１２０℃以上である。一方、加熱温度の上限は、好ましくは２００℃以下、より好ましくは１８０℃以下である。加熱時間は、好ましくは１０分以上、より好ましくは３０分以上である。一方、加熱時間の上限は、好ましくは１８０分以下、より好ましくは１２０分以下である。 The heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The heating time is preferably 10 minutes or more, more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
　図２２に示すように、基板１１ａ上にバンプ３２を設ける。 As shown in FIG. 22, bumps 32 are provided on the substrate 11a.
　図２３に示すように、硬化体３を個片化（ダイシング）して、半導体装置４を得る。 23, as shown in FIG. 23, the cured body 3 is separated (diced) to obtain the semiconductor device 4.
　（変形例１）
　実施形態３では、積層体１をステージ１０７上に配置するが、変形例１では、チップ実装基板１１をステージ１０７上に配置し、次いでチップ実装基板１１上に熱硬化性樹脂シート１２を配置し、次いで熱硬化性樹脂シート１２上にフィルム１３を配置する。 (Modification 1)
In the third embodiment, the laminate 1 is disposed on the stage 107. In the first modification, the chip mounting substrate 11 is disposed on the stage 107, and then the thermosetting resin sheet 12 is disposed on the chip mounting substrate 11. Then, the film 13 is disposed on the thermosetting resin sheet 12.
　（変形例２）
　実施形態３では、積層体１をステージ１０７上に配置するが、変形例２では、チップ実装基板１１及びチップ実装基板１１上に配置された熱硬化性樹脂シート１２を備える積層物２０１をステージ１０７上に配置し、次いで積層物２０１上にフィルム１３を配置する。 (Modification 2)
In the third embodiment, the laminate 1 is disposed on the stage 107. In the second modification, the laminate 201 including the chip mounting substrate 11 and the thermosetting resin sheet 12 disposed on the chip mounting substrate 11 is disposed on the stage 107. Then, the film 13 is placed on the laminate 201.
　（変形例３）
　実施形態３では、平板１１７で封止体２をプレスするが、変形例３では封止体２をプレスしない。 (Modification 3)
In the third embodiment, the sealing body 2 is pressed by the flat plate 117, but in the third modification, the sealing body 2 is not pressed.
　以上のとおり、実施形態３の半導体装置４の製造方法は、積層物２０１を加熱下で加圧することにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する工程を含む。 As described above, in the manufacturing method of the semiconductor device 4 according to the third embodiment, the gap between the substrate 11a and the semiconductor chip 11b is covered while the semiconductor chip 11b is covered with the thermosetting resin sheet 12 by pressurizing the laminate 201 under heating. The step of filling the thermosetting resin sheet 12 is included.
　半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する工程は、積層体１の外周部１３ｂをステージ１０７に押し付けることにより、密閉容器１２１を形成するステップと、密閉容器１２１の外部の圧力を密閉容器１２１の内部の圧力より高めることにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填するステップとを含む。 The process of filling the gap between the substrate 11a and the semiconductor chip 11b with the thermosetting resin sheet 12 while covering the semiconductor chip 11b with the thermosetting resin sheet 12 is performed by pressing the outer peripheral portion 13b of the laminate 1 against the stage 107. The step of forming the sealed container 121 and the pressure outside the sealed container 121 are made higher than the pressure inside the sealed container 121, so that the semiconductor chip 11b is covered with the thermosetting resin sheet 12 and the substrate 11a and the semiconductor chip 11b are covered. Filling the gap with the thermosetting resin sheet 12.
　実施形態３の半導体装置４の製造方法は、封止体２を加熱することにより、硬化体３を形成する工程、及び硬化体３をダイシングすることにより、半導体装置４を得る工程などをさらに含む。 The manufacturing method of the semiconductor device 4 of the third embodiment further includes a step of forming the cured body 3 by heating the sealing body 2 and a step of obtaining the semiconductor device 4 by dicing the cured body 3. .
　［実施形態４］
　図２４に示すように、積層フィルム１０を枠状押え部１１３ａに固定する。積層フィルム１０は、熱硬化性樹脂シート１２及び熱硬化性樹脂シート１２上に配置されたフィルム１３を備える。固定方法としては、例えば、枠状押え部１１３ａに積層フィルム１０を吸着させる方法、接着剤で枠状押え部１１３ａに積層フィルム１０を固定する方法、枠状押え部１１３ａにフィルム１３を巻きつける方法などがある。次いで、チップ実装基板１１をステージ１０７上に配置する。 [Embodiment 4]
As shown in FIG. 24, the laminated film 10 is fixed to the frame-shaped presser portion 113a. The laminated film 10 includes a thermosetting resin sheet 12 and a film 13 disposed on the thermosetting resin sheet 12. As a fixing method, for example, a method of adsorbing the laminated film 10 to the frame-shaped presser portion 113a, a method of fixing the laminated film 10 to the frame-shaped presser portion 113a with an adhesive, and a method of winding the film 13 around the frame-shaped presser portion 113a and so on. Next, the chip mounting substrate 11 is placed on the stage 107.
　ステージ１０７はあらかじめ加熱されている。ステージ１０７の好適な温度条件は、実施形態３で説明した温度条件と同様である。 The stage 107 has been heated in advance. Suitable temperature conditions for the stage 107 are the same as those described in the third embodiment.
　図２５に示すように、上ヒータ板１１１及び上枠部材１１２を下降させ、上枠部材１１２の下端部を下板部材１０６の外縁部に沿って気密に摺動させ、上ヒータ板１１１、上枠部材１１２及び下板部材１０６によって気密に囲われたチェンバーを形成する。チェンバーを形成した段階で、上ヒータ板１１１及び上枠部材１１２の下降を停止する。 As shown in FIG. 25, the upper heater plate 111 and the upper frame member 112 are lowered, and the lower end portion of the upper frame member 112 is airtightly slid along the outer edge portion of the lower plate member 106, A chamber hermetically surrounded by the frame member 112 and the lower plate member 106 is formed. At the stage where the chamber is formed, the lowering of the upper heater plate 111 and the upper frame member 112 is stopped.
　次いで、真空引きを行い、チェンバー内を減圧状態とする。チェンバー内の圧力は、好ましくは５００Ｐａ以下である。 Next, evacuation is performed, and the chamber is depressurized. The pressure in the chamber is preferably 500 Pa or less.
　枠状押え部１１３ａを下降させることにより、積層フィルム１０をチップ実装基板１１上に配置して、積層体１を形成する。 The laminated film 10 is disposed on the chip mounting substrate 11 by lowering the frame-shaped pressing part 113a, and the laminated body 1 is formed.
　図２６に示すように、積層体１を形成した後も枠状押え部１１３ａの下降を続けることにより、フィルム１３の外周部１３ｂをステージ１０７に押さえつけて、密閉容器１２１を形成する。密閉容器１２１は、ステージ１０７及びフィルム１３を備える。密閉容器１２１の内部には、チップ実装基板１１及びチップ実装基板１１上に配置された熱硬化性樹脂シート１２が配置されている。なお、チェンバー内を減圧状態にした後に密閉容器１２１を形成するため、密閉容器１２１の内部及び外部は減圧状態である。 As shown in FIG. 26, after the laminated body 1 is formed, the frame-shaped pressing portion 113a continues to descend, thereby pressing the outer peripheral portion 13b of the film 13 against the stage 107 to form the sealed container 121. The sealed container 121 includes a stage 107 and a film 13. Inside the airtight container 121, the chip mounting substrate 11 and the thermosetting resin sheet 12 disposed on the chip mounting substrate 11 are disposed. In addition, in order to form the airtight container 121 after making the inside of a chamber into the pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
　図２７に示すように、真空・加圧口１１６を開放することにより、チェンバー内の圧力を大気圧にする。すなわち、密閉容器１２１の外部の圧力を大気圧にする。 As shown in FIG. 27, the pressure in the chamber is set to atmospheric pressure by opening the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
　図２８に示すように、真空・加圧口１１６にガスを導入することによりチェンバー内の圧力を高める。すなわち、密閉容器１２１の外部の圧力を大気圧よりも高める。これにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する。これにより、封止体２を得る。 As shown in FIG. 28, the pressure in the chamber is increased by introducing gas into the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure. Thereby, the thermosetting resin sheet 12 is filled in the gap between the substrate 11a and the semiconductor chip 11b while covering the semiconductor chip 11b with the thermosetting resin sheet 12. Thereby, the sealing body 2 is obtained.
　ガスとしては特に限定されず、空気、窒素などが挙げられる。 The gas is not particularly limited, and examples thereof include air and nitrogen.
　密閉容器１２１の外部の好適な圧力は、実施形態３で説明した圧力と同様である。 A suitable pressure outside the sealed container 121 is the same as the pressure described in the third embodiment.
　図２９に示すように、封止体２の横にスペーサー１３１を配置する。 As shown in FIG. 29, a spacer 131 is disposed beside the sealing body 2.
　図３０に示すように、平板１１７をスペーサー１３１に当たるまで下降させることにより、封止体２をプレスし、封止体２の厚みを調整する。これにより、封止体２の厚みを均一化することができる。平板１１７で封止体２を押す際の圧力としては、０．１ＭＰａ～８０ＭＰａが好ましい。 30, the sealing body 2 is pressed by lowering the flat plate 117 until it hits the spacer 131, and the thickness of the sealing body 2 is adjusted. Thereby, the thickness of the sealing body 2 can be made uniform. The pressure when pressing the sealing body 2 with the flat plate 117 is preferably 0.1 MPa to 80 MPa.
　次いで、フィルム１３を取り除く。 Next, the film 13 is removed.
　次いで、封止部２１ｂのうち基板１１ａから側方にはみ出した部分を切り離す。 Next, the portion of the sealing portion 21b that protrudes laterally from the substrate 11a is cut off.
　図３１に示すように、封止体２を加熱することで樹脂層２１を硬化させて、硬化体３を形成する。 As shown in FIG. 31, the resin layer 21 is cured by heating the sealing body 2 to form the cured body 3.
　好適な加熱温度は、実施形態３で説明した加熱温度と同様である。好適な加熱時間は、実施形態３で説明した加熱時間と同様である。 Suitable heating temperature is the same as the heating temperature described in the third embodiment. A suitable heating time is the same as the heating time described in the third embodiment.
　図３２に示すように、基板１１ａ上にバンプ３２を設ける。 As shown in FIG. 32, bumps 32 are provided on the substrate 11a.
　図３３に示すように、硬化体３を個片化（ダイシング）して、半導体装置４を得る。 33, the hardened body 3 is separated into pieces (dicing) to obtain the semiconductor device 4.
　（変形例１）
　実施形態４では、積層フィルム１０を枠状押え部１１３ａに固定した後、チップ実装基板１１をステージ１０７上に配置するが、変形例１では、チップ実装基板１１をステージ１０７上に配置した後、積層フィルム１０を枠状押え部１１３ａに固定する。 (Modification 1)
In the fourth embodiment, after the laminated film 10 is fixed to the frame-shaped pressing portion 113a, the chip mounting substrate 11 is disposed on the stage 107. However, in Modification 1, after the chip mounting substrate 11 is disposed on the stage 107, The laminated film 10 is fixed to the frame-shaped presser portion 113a.
　（変形例２）
　実施形態４では、平板１１７で封止体２をプレスするが、変形例２では封止体２をプレスしない。 (Modification 2)
In the fourth embodiment, the sealing body 2 is pressed by the flat plate 117, but in the second modification, the sealing body 2 is not pressed.
　以上のとおり、実施形態４の半導体装置４の製造方法は、積層物２０１を加熱下で加圧することにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する工程を含む。 As described above, in the manufacturing method of the semiconductor device 4 according to the fourth embodiment, the gap between the substrate 11a and the semiconductor chip 11b is obtained by covering the semiconductor chip 11b with the thermosetting resin sheet 12 by pressurizing the laminate 201 under heating. The step of filling the thermosetting resin sheet 12 is included.
　半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填する工程は、減圧雰囲気下で積層フィルム１０をチップ実装基板１１上に配置することにより、積層体１を形成するステップと、積層体１の外周部１３ｂをステージ１０７に押し付けることにより、密閉容器１２１を形成するステップと、密閉容器１２１の外部の圧力を密閉容器１２１の内部の圧力より高めることにより、半導体チップ１１ｂを熱硬化性樹脂シート１２で覆いつつ、基板１１ａと半導体チップ１１ｂのギャップに熱硬化性樹脂シート１２を充填するステップとを含む。減圧雰囲気下で積層フィルム１０をチップ実装基板１１上に配置するので、半導体チップ１１ｂ周辺にボイドが生じることを防止できる。 In the process of filling the gap between the substrate 11a and the semiconductor chip 11b with the thermosetting resin sheet 12 while covering the semiconductor chip 11b with the thermosetting resin sheet 12, the laminated film 10 is disposed on the chip mounting substrate 11 in a reduced pressure atmosphere. By doing so, the step of forming the laminated body 1, the step of forming the sealed container 121 by pressing the outer peripheral portion 13 b of the laminated body 1 against the stage 107, and the pressure outside the sealed container 121 are set inside the sealed container 121. And the step of filling the gap between the substrate 11a and the semiconductor chip 11b with the thermosetting resin sheet 12 while covering the semiconductor chip 11b with the thermosetting resin sheet 12. Since the laminated film 10 is disposed on the chip mounting substrate 11 under a reduced pressure atmosphere, it is possible to prevent voids from being generated around the semiconductor chip 11b.
　実施形態４の半導体装置４の製造方法は、封止体２を加熱することにより、硬化体３を形成する工程、及び硬化体３をダイシングすることにより、半導体装置４を得る工程などをさらに含む。 The manufacturing method of the semiconductor device 4 of the fourth embodiment further includes a step of forming the cured body 3 by heating the sealing body 2, a step of obtaining the semiconductor device 4 by dicing the cured body 3, and the like. .
　［実施形態５］
　図３４に示すように、積層体６をステージ１０７上に配置する。積層体６は、チップ実装ウェハ６１、チップ実装ウェハ６１上に配置された熱硬化性樹脂シート１２及び熱硬化性樹脂シート１２上に配置されたフィルム１３を備える。 [Embodiment 5]
As shown in FIG. 34, the stacked body 6 is disposed on the stage 107. The laminate 6 includes a chip mounting wafer 61, a thermosetting resin sheet 12 disposed on the chip mounting wafer 61, and a film 13 disposed on the thermosetting resin sheet 12.
　フィルム１３は、熱硬化性樹脂シート１２と接する中央部１３ａ及び中央部１３ａの周辺に配置された周辺部１３ｂを備える。 The film 13 includes a central portion 13a that is in contact with the thermosetting resin sheet 12 and a peripheral portion 13b that is disposed around the central portion 13a.
　ステージ１０７はあらかじめ加熱されている。ステージ１０７の好適な温度条件は、実施形態３で説明した温度条件と同様である。 The stage 107 has been heated in advance. Suitable temperature conditions for the stage 107 are the same as those described in the third embodiment.
　図３５に示すように、加圧シリンダ１１４により上ヒータ板１１１及び上枠部材１１２を下降させ、上枠部材１１２の下端部を下板部材１０６の外縁部に沿って気密に摺動させ、上ヒータ板１１１、上枠部材１１２及び下板部材１０６によって気密に囲われたチェンバーを形成する。チェンバーを形成した段階で、上ヒータ板１１１及び上枠部材１１２の下降を停止する。 As shown in FIG. 35, the upper heater plate 111 and the upper frame member 112 are lowered by the pressure cylinder 114, and the lower end portion of the upper frame member 112 is slid in an air-tight manner along the outer edge portion of the lower plate member 106. A chamber that is hermetically surrounded by the heater plate 111, the upper frame member 112, and the lower plate member 106 is formed. At the stage where the chamber is formed, the lowering of the upper heater plate 111 and the upper frame member 112 is stopped.
　次いで、真空引きを行い、チェンバー内を減圧状態とする。チェンバー内の圧力は、好ましくは５００Ｐａ以下である。 Next, evacuation is performed, and the chamber is depressurized. The pressure in the chamber is preferably 500 Pa or less.
　図３６に示すように、枠状押え部１１３ａを下降させることにより、フィルム１３の外周部１３ｂをステージ１０７に押さえつけて、密閉容器１２１を形成する。密閉容器１２１は、ステージ１０７及びフィルム１３を備える。密閉容器１２１の内部には、チップ実装ウェハ６１及びチップ実装ウェハ６１上に配置された熱硬化性樹脂シート１２が配置されている。なお、真空チェンバー内を減圧状態にした後に密閉容器１２１を形成するため、密閉容器１２１の内部及び外部は減圧状態である。 As shown in FIG. 36, the outer periphery 13b of the film 13 is pressed against the stage 107 by lowering the frame-shaped presser 113a, thereby forming the sealed container 121. The sealed container 121 includes a stage 107 and a film 13. Inside the sealed container 121, the chip mounting wafer 61 and the thermosetting resin sheet 12 disposed on the chip mounting wafer 61 are disposed. In addition, in order to form the airtight container 121 after making the inside of a vacuum chamber into a pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
　図３７に示すように、真空・加圧口１１６を開放することにより、チェンバー内の圧力を大気圧にする。すなわち、密閉容器１２１の外部の圧力を大気圧にする。 As shown in FIG. 37, the pressure in the chamber is set to atmospheric pressure by opening the vacuum / pressure port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
　図３８に示すように、真空・加圧口１１６にガスを導入することによりチェンバー内の圧力を高める。すなわち、密閉容器１２１の外部の圧力を大気圧よりも高める。これにより、半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填する。これにより、封止体７を得る。 As shown in FIG. 38, the pressure in the chamber is increased by introducing gas into the vacuum / pressurizing port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure. Thus, the thermosetting resin sheet 12 is filled in the gap between the semiconductor wafer 61a and the semiconductor chip 61b while covering the semiconductor chip 61b with the thermosetting resin sheet 12. Thereby, the sealing body 7 is obtained.
　ガスとしては特に限定されず、空気、窒素などが挙げられる。 The gas is not particularly limited, and examples thereof include air and nitrogen.
　密閉容器１２１の外部の好適な圧力は、実施形態３で説明した圧力と同様である。 A suitable pressure outside the sealed container 121 is the same as the pressure described in the third embodiment.
　封止体７は、フィルム１３と接している。 Seal 7 is in contact with film 13.
　図３９に示すように、封止体２の横にスペーサー１３１を配置する。 As shown in FIG. 39, a spacer 131 is disposed beside the sealing body 2.
　図４０に示すように、平板１１７をスペーサー１３１に当たるまで下降させることにより、封止体２をプレスし、封止体２の厚みを調整する。これにより、封止体２の厚みを均一化することができる。平板１１７で封止体２を押す際の圧力としては、０．１ＭＰａ～８０ＭＰａが好ましい。 As shown in FIG. 40, the sealing body 2 is pressed by lowering the flat plate 117 until it hits the spacer 131, and the thickness of the sealing body 2 is adjusted. Thereby, the thickness of the sealing body 2 can be made uniform. The pressure when pressing the sealing body 2 with the flat plate 117 is preferably 0.1 MPa to 80 MPa.
　次いで、フィルム１３を取り除く。 Next, the film 13 is removed.
　次いで、封止部７１ｂのうち半導体ウェハ６１ａから側方にはみ出した部分を切り離す。 Next, the portion of the sealing portion 71b that protrudes laterally from the semiconductor wafer 61a is cut off.
　図４１に示すように、封止体７を加熱することで樹脂層７１を硬化させて、硬化体８を形成する。 As shown in FIG. 41, the sealing body 7 is heated to cure the resin layer 71 and form the cured body 8.
　好適な加熱温度は、実施形態３で説明した加熱温度と同様である。好適な加熱時間は、実施形態３で説明した加熱時間と同様である。 Suitable heating temperature is the same as the heating temperature described in the third embodiment. A suitable heating time is the same as the heating time described in the third embodiment.
　図４２に示すように、硬化体８の硬化層８１を研削する。 42, the hardened layer 81 of the hardened body 8 is ground.
　図４３に示すように、硬化体８の半導体ウェハ６１ａを研削して、貫通電極６０１ｂを露出させる。すなわち、ウェハ面を研削して得られた研削面８２では、貫通電極６０１ｂが露出している。 43, the semiconductor wafer 61a of the cured body 8 is ground to expose the through electrode 601b. That is, the through electrode 601b is exposed on the ground surface 82 obtained by grinding the wafer surface.
　図４４に示すように、セミアディティブ法などを利用して、研削面８２上に再配線層８３を形成して、再配線体８４を形成する。再配線層８３は、再配線８３ａを備える。次いで、再配線層８３上にバンプ８５を形成する。バンプ８５は再配線８３ａ、貫通電極６０１ｂ、電極６０１ａ及びバンプ６２を介して半導体チップ６１ｂと電気的に接続している。 As shown in FIG. 44, the rewiring layer 83 is formed on the grinding surface 82 by using a semi-additive method or the like, and the rewiring body 84 is formed. The rewiring layer 83 includes a rewiring 83a. Next, bumps 85 are formed on the rewiring layer 83. The bump 85 is electrically connected to the semiconductor chip 61b through the rewiring 83a, the through electrode 601b, the electrode 601a, and the bump 62.
　図４５に示すように、再配線体８４を個片化（ダイシング）して、半導体装置９を得る。 45, the rewiring body 84 is separated into pieces (dicing), and the semiconductor device 9 is obtained.
　（変形例１）
　実施形態５では、積層体６をステージ１０７上に配置するが、変形例１では、チップ実装ウェハ６１をステージ１０７上に配置し、次いでチップ実装ウェハ６１上に熱硬化性樹脂シート１２を配置し、次いで熱硬化性樹脂シート１２上にフィルム１３を配置する。 (Modification 1)
In the fifth embodiment, the laminated body 6 is disposed on the stage 107. However, in the first modification, the chip mounting wafer 61 is disposed on the stage 107, and then the thermosetting resin sheet 12 is disposed on the chip mounting wafer 61. Then, the film 13 is disposed on the thermosetting resin sheet 12.
　（変形例２）
　実施形態５では、積層体６をステージ１０７上に配置するが、変形例２では、チップ実装ウェハ６１及びチップ実装ウェハ６１上に配置された熱硬化性樹脂シート１２を備える積層物２０２をステージ１０７上に配置し、次いで積層物２０２上にフィルム１３を配置する。 (Modification 2)
In the fifth embodiment, the stacked body 6 is disposed on the stage 107. In the second modification, the stacked body 202 including the chip mounted wafer 61 and the thermosetting resin sheet 12 disposed on the chip mounted wafer 61 is disposed on the stage 107. The film 13 is then placed on the laminate 202.
　（変形例３）
　実施形態５では、平板１１７で封止体２をプレスするが、変形例３では封止体２をプレスしない。 (Modification 3)
In the fifth embodiment, the sealing body 2 is pressed by the flat plate 117, but in the third modification, the sealing body 2 is not pressed.
　（変形例４）
　実施形態５では、硬化体８の硬化層８１を研削するが、変形例４では、硬化層８１を研削しない。 (Modification 4)
In the fifth embodiment, the hardened layer 81 of the hardened body 8 is ground, but in the fourth modification, the hardened layer 81 is not ground.
　以上のとおり、実施形態５の半導体装置４の製造方法は、積層物２０２を加熱下で加圧することにより、半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填する工程とを含む。 As described above, in the method for manufacturing the semiconductor device 4 according to the fifth embodiment, the semiconductor chip 61b is covered with the thermosetting resin sheet 12 by pressurizing the laminate 202 under heating, and the semiconductor wafer 61a and the semiconductor chip 61b are covered. Filling the gap with the thermosetting resin sheet 12.
　半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填する工程は、積層体６の外周部１３ｂをステージ１０７に押し付けることにより、密閉容器１２１を形成するステップと、密閉容器１２１の外部の圧力を密閉容器１２１の内部の圧力より高めることにより、半導体チップ６１ｂを熱硬化性樹脂シート１２で覆いつつ、半導体ウェハ６１ａと半導体チップ６１ｂのギャップに熱硬化性樹脂シート１２を充填するステップとを含む。 The process of filling the gap between the semiconductor wafer 61 a and the semiconductor chip 61 b with the thermosetting resin sheet 12 while covering the semiconductor chip 61 b with the thermosetting resin sheet 12 is performed by pressing the outer peripheral portion 13 b of the stacked body 6 against the stage 107. The semiconductor wafer 61a and the semiconductor chip are formed while covering the semiconductor chip 61b with the thermosetting resin sheet 12 by forming the sealed container 121 and increasing the pressure outside the sealed container 121 to be higher than the pressure inside the sealed container 121. Filling the gap 61b with the thermosetting resin sheet 12.
　実施形態５の半導体装置９の製造方法は、封止体７を加熱することにより硬化体８を形成する工程、硬化体８に再配線層８３を形成することにより再配線体８４を形成する工程、及び再配線体８４をダイシングすることにより半導体装置９を得る工程などをさらに含む。 The manufacturing method of the semiconductor device 9 according to the fifth embodiment includes a step of forming the cured body 8 by heating the sealing body 7 and a step of forming the rewiring body 84 by forming the rewiring layer 83 on the cured body 8. And a step of obtaining the semiconductor device 9 by dicing the rewiring body 84.
　以下に、この発明の好適な実施例を例示的に詳しく説明する。ただし、この実施例に記載されている材料や配合量などは、特に限定的な記載がない限りは、この発明の範囲をそれらのみに限定する趣旨のものではない。 Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified.
　熱硬化性樹脂シートを作製するために使用した成分について説明する。
　エポキシ樹脂Ａ：三菱化学社製のＥＰ８２８（ビスフェノールＡ型エポキシ樹脂、エポキン当量１８４ｇ／ｅｑ～１９４ｇ／ｅｑ、２３℃で液状）
　エポキシ樹脂Ｂ：新日鐵化学社製のＹＳＬＶ－８０ＸＹ（ビスフェノールＦ型エポキシ樹脂、エポキン当量：２００ｇ／ｅｑ、軟化点：８０℃）
　エポキシ樹脂Ｃ：日本化薬社製のＥＰＰＮ－５０１ＨＹ（フェノールノボラック変性型エポキシ樹脂、エポキン当量：１６９ｇ／ｅｑ、軟化点：６０℃）
　フェノールノボラック型硬化剤Ａ：明和化成社製のＭＥＨ－７５００－３Ｓ（フェノールノボラック型硬化剤、水酸基当量１０３ｇ／ｅｑ、軟化点８３℃）
　フェノールノボラック型硬化剤Ｂ：明和化成社製のＨ－４（フェノールノボラック型硬化剤、水酸基当量１０５ｇ／ｅｑ、軟化点７１℃）
　アクリル樹脂：三菱レイヨン社製のメタブレン　Ｊ-５８００（コアシェル型アクリル樹脂、平均粒子径１μｍ）
　無機充填剤Ａ：電気化学工業社製のＦＢ－５ＳＤＣ（溶融球状シリカ、平均粒子径５μｍ、最大粒子径２０μｍ）
　無機充填剤Ｂ：アドマテックス社製のＳＯ－２５Ｒ（溶融球状シリカ、平均粒子径０．５μｍ、最大粒子径５μｍ）
　無機充填剤Ｃ：電気化学工業社製のＦＢ－３ＳＤＣ（溶融球状シリカ、平均粒子径３μｍ、最大粒子径１０μｍ）
　硬化促進剤：四国化成工業社製の２ＰＨＺ－ＰＷ（２－フェニル－４，５－ジヒドロキシメチルイミダゾール）
　カーボンブラック：三菱化学社製の＃２０（粒子径５０ｎｍ） The component used in order to produce a thermosetting resin sheet is demonstrated.
Epoxy resin A: EP828 manufactured by Mitsubishi Chemical Corporation (bisphenol A type epoxy resin, epkin equivalent of 184 g / eq to 194 g / eq, liquid at 23 ° C.)
Epoxy resin B: YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, Epokin equivalent: 200 g / eq, softening point: 80 ° C.)
Epoxy resin C: EPPN-501HY manufactured by Nippon Kayaku Co., Ltd. (phenol novolak modified epoxy resin, epkin equivalent: 169 g / eq, softening point: 60 ° C.)
Phenol novolac type curing agent A: MEH-7500-3S manufactured by Meiwa Kasei Co., Ltd. (phenol novolak type curing agent, hydroxyl group equivalent 103 g / eq, softening point 83 ° C.)
Phenol novolac type curing agent B: H-4 manufactured by Meiwa Kasei Co., Ltd. (phenol novolac type curing agent, hydroxyl group equivalent 105 g / eq, softening point 71 ° C.)
Acrylic resin: Metablene J-5800 manufactured by Mitsubishi Rayon Co., Ltd. (core-shell type acrylic resin, average particle diameter 1 μm)
Inorganic filler A: FB-5SDC manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica, average particle size 5 μm, maximum particle size 20 μm)
Inorganic filler B: SO-25R manufactured by Admatechs (fused spherical silica, average particle size 0.5 μm, maximum particle size 5 μm)
Inorganic filler C: FB-3SDC manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica, average particle size 3 μm, maximum particle size 10 μm)
Curing accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
Carbon black: # 20 (particle size 50 nm) manufactured by Mitsubishi Chemical Corporation
　パッケージを作製するために使用した部品について説明する。
　半導体チップ：チップ厚み　２００μｍ、チップサイズ　１０ｍｍ×１０ｍｍ、はんだバンプピッチ　４００μｍ（フルアレイ）、はんだ径　１００μｍの半導体チップ
　チップ実装基板Ａ：有機基板（基板サイズ　２４０ｍｍ×１９０ｍｍ、基板厚み　２４０μｍの有機基板）及び有機基板にフリップチップ実装された４８個の半導体チップを備えるチップ実装基板
　チップ実装基板Ｂ：シリコンウェハ基板（基板サイズ　８インチ直径（２００ｍｍ直径）、基板厚み　２００μｍのシリコンウェハ基板）及びシリコンウェハ基板にフリップチップ実装された４０個の半導体チップを備えるチップ実装基板 The parts used for manufacturing the package will be described.
Semiconductor chip: chip thickness 200 μm, chip size 10 mm × 10 mm, solder bump pitch 400 μm (full array), solder diameter 100 μm semiconductor chip Chip mounting substrate A: organic substrate (substrate size 240 mm × 190 mm, substrate thickness 240 μm organic substrate) and organic Chip mounting substrate comprising 48 semiconductor chips flip-chip mounted on the substrate Chip mounting substrate B: Flip to silicon wafer substrate (silicon wafer substrate with a substrate size of 8 inch diameter (200 mm diameter) and substrate thickness of 200 μm) and silicon wafer substrate Chip mounting substrate comprising 40 semiconductor chips mounted on a chip
　チップ実装基板Ａにおいて、半導体チップと有機基板のギャップは７５μｍであった。
　チップ実装基板Ｂにおいて、半導体チップとシリコンウェハ基板のギャップは７５μｍであった。 In the chip mounting substrate A, the gap between the semiconductor chip and the organic substrate was 75 μm.
In the chip mounting substrate B, the gap between the semiconductor chip and the silicon wafer substrate was 75 μm.
　［実施例１～５及び実施例７～９］
　（熱硬化性樹脂シートの作製）
　表１に記載の配合比に従い、各成分をミキサーにてブレンドし、２軸混練機により１２０℃で２分間溶融混練し、続いてＴダイから押出しすることにより、厚さ４００μｍの熱硬化性樹脂シートを作製した。 [Examples 1 to 5 and Examples 7 to 9]
(Preparation of thermosetting resin sheet)
According to the blending ratio shown in Table 1, each component is blended with a mixer, melt kneaded at 120 ° C. for 2 minutes with a twin-screw kneader, and then extruded from a T-die to give a thermosetting resin having a thickness of 400 μm. A sheet was produced.
　（パッケージの作製）
　圧縮成型機（アピックヤマダ社製の　ＷＣＭ－３００）に圧縮成型用の金型を取り付けた。金型を表１に示す温度に予備加熱した。下型上にチップ実装基板Ａを配置し、次いでチップ実装基板Ａ上に熱硬化性樹脂シート（縦２３０ｍｍ×横１８０ｍｍ×厚さ４００μｍの熱硬化性樹脂シート）を配置した。次いで、１８０秒間、表１に示す圧力で型締めすることにより、封止体を得た。６時間、１７５℃で封止体を保持することにより、パッケージを得た。なお、パッケージは、チップ実装基板Ａ及びチップ実装基板Ａ上に配置された硬化層を備える。硬化層は、基板と半導体チップの間に挟まれた接続保護部、及び接続保護部の周辺に配置されたチップ保護部を備える。 (Production of package)
A compression mold was attached to a compression molding machine (WCM-300 manufactured by Apic Yamada). The mold was preheated to the temperature shown in Table 1. The chip mounting substrate A was disposed on the lower mold, and then a thermosetting resin sheet (230 mm long × 180 mm wide × 400 μm thick thermosetting resin sheet) was disposed on the chip mounting substrate A. Subsequently, the sealing body was obtained by clamping with the pressure shown in Table 1 for 180 seconds. A package was obtained by holding the sealed body at 175 ° C. for 6 hours. The package includes a chip mounting substrate A and a hardened layer disposed on the chip mounting substrate A. The hardened layer includes a connection protection unit sandwiched between the substrate and the semiconductor chip, and a chip protection unit disposed around the connection protection unit.
　［実施例６］
　（熱硬化性樹脂シートの作製）
　実施例１と同様の方法で、熱硬化性樹脂シートを作製した。 [Example 6]
(Preparation of thermosetting resin sheet)
A thermosetting resin sheet was produced in the same manner as in Example 1.
　（パッケージの作製）
　圧縮成型機（アピックヤマダ社製の　ＷＣＭ－３００）に圧縮成型用の金型を取り付けた。金型を表１に示す温度に予備加熱した。下型上にチップ実装基板Ｂを配置し、次いでチップ実装基板Ｂ上に熱硬化性樹脂シート（８インチ直径、厚さ４００μｍの熱硬化性樹脂シート）を配置した。次いで、１８０秒間、表１に示す圧力で型締めすることにより、封止体を得た。６時間、１７５℃で封止体を保持することにより、パッケージを得た。 (Production of package)
A compression mold was attached to a compression molding machine (WCM-300 manufactured by Apic Yamada). The mold was preheated to the temperature shown in Table 1. The chip mounting substrate B was placed on the lower mold, and then a thermosetting resin sheet (8 inch diameter, 400 μm thick thermosetting resin sheet) was placed on the chip mounting substrate B. Subsequently, the sealing body was obtained by clamping with the pressure shown in Table 1 for 180 seconds. A package was obtained by holding the sealed body at 175 ° C. for 6 hours.
　［比較例１］
　（粉末状の熱硬化性樹脂の作製）
　実施例１と同様の方法で、熱硬化性樹脂シートを作製した。得られた熱硬化性樹脂シートを冷凍粉砕し、粉末状の熱硬化性樹脂を得た。 [Comparative Example 1]
(Preparation of powdered thermosetting resin)
A thermosetting resin sheet was produced in the same manner as in Example 1. The obtained thermosetting resin sheet was freeze-ground and a powdery thermosetting resin was obtained.
　（パッケージの作製）
　粉末状の熱硬化性樹脂を用い、以下の条件でトランスファー成型を行うことにより、パッケージを得た。
　　　金型温度：１７５℃
　　　注入圧力：６．０ＭＰａ
　　　成形時間：１８０秒
　　　後硬化：１７５℃で６時間保持 (Production of package)
A package was obtained by performing transfer molding under the following conditions using a powdered thermosetting resin.
Mold temperature: 175 ° C
Injection pressure: 6.0 MPa
Molding time: 180 seconds Post-curing: Hold at 175 ° C for 6 hours
　［評価］
　熱硬化性樹脂シート、粉末状の熱硬化性樹脂及びパッケージについて、以下の評価を行った。結果を表１に示す。 [Evaluation]
The following evaluation was performed on the thermosetting resin sheet, the powdery thermosetting resin, and the package. The results are shown in Table 1.
　（無機充填剤の最大粒子径）
　熱硬化性樹脂シートを１５０℃で１時間保持することにより、硬化シートを得た。硬化シートをＩＰ（イオンポリッシュ）法により研磨した。次いで、硬化シートの断面をＳＥＭで観察することにより、無機充填剤の最大粒子の径を測定した。 (Maximum particle size of inorganic filler)
A cured sheet was obtained by holding the thermosetting resin sheet at 150 ° C. for 1 hour. The cured sheet was polished by an IP (ion polish) method. Subsequently, the diameter of the largest particle | grains of the inorganic filler was measured by observing the cross section of a cured sheet with SEM.
　（最低溶融粘度）
　ロールラミネーターを用いて、厚み４００μｍの熱硬化性樹脂シートを９０℃にて２枚積層し、厚み８００μｍの積層シートを得た。積層シートを直径２５ｍｍに打ち抜くことにより、直径２５ｍｍの試験片を得た。試験片について、レオメーター（サーモフィッシャーサイエンティフィック社製のＭａｒｓ　ＩＩＩ）を用いて、１Ｈｚ、歪み５％、昇温速度１０℃／分で５０℃～１５０℃で粘度を測定した。測定された粘度の最低値を最低溶融粘度とした。 (Minimum melt viscosity)
Two rolls of 400 μm thick thermosetting resin sheets were laminated at 90 ° C. using a roll laminator to obtain a laminated sheet having a thickness of 800 μm. A test piece having a diameter of 25 mm was obtained by punching the laminated sheet to a diameter of 25 mm. The viscosity of the test piece was measured at 50 ° C. to 150 ° C. using a rheometer (Mars III manufactured by Thermo Fisher Scientific) at 1 Hz, a strain of 5%, and a heating rate of 10 ° C./min. The lowest measured viscosity was taken as the lowest melt viscosity.
　（充填性）
　流動性、充填性を評価するために、超音波探査装置を用いて、チップ下ギャップのボイドの有無を調べた。全パッケージについてボイドの有無を調べて、ボイドがあったパッケージの個数をカウントした。 (Fillability)
In order to evaluate fluidity and filling properties, the presence of voids in the gap under the chip was examined using an ultrasonic probe. All packages were examined for the presence of voids, and the number of packages with voids was counted.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　　　　２００　　　金型
　　　２００１　　　下型
　　　２００２　　　上型
　　　２００２ａ　　中部
　　　２００２ｂ　　外周部
　　　　２０１　　　積層物
　　　　　１１　　　チップ実装基板
　　　　　１１ａ　　基板
　　　　　１１ｂ　　半導体チップ
　　　　　１１ｃ　　バンプ
　　　　　１２　　　熱硬化性樹脂シート
　　　　　　２　　　封止体
　　　　　２１　　　樹脂層
　　　　　２１ａ　　アンダーフィル部
　　　　　２１ｂ　　封止部
　　　　　　３　　　硬化体
　　　　　３１　　　硬化層
　　　　　３１ａ　　接続保護部
　　　　　３１ｂ　　チップ保護部
　　　　　３２　　　バンプ
　　　　　　４　　　半導体装置 200 Mold 2001 Lower mold 2002 Upper mold 2002a Middle part 2002b Outer peripheral part 201 Laminate 11 Chip mounting substrate 11a Substrate 11b Semiconductor chip 11c Bump 12 Thermosetting resin sheet 2 Sealing body 21 Resin layer 21a Underfill part 21b Sealing part 3 Hardened body 31 Hardened layer 31a Connection protection part 31b Chip protection part 32 Bump 4 Semiconductor device
　　　　２０２　　　積層物
　　　　　６１　　　チップ実装ウェハ
　　　　　６１ａ　　半導体ウェハ
　　　　６０１ａ　　電極
　　　　６０１ｂ　　貫通電極
　　　　　６１ｂ　　半導体チップ
　　　　　６２　　　バンプ
　　　　　　７　　　封止体
　　　　　７１　　　樹脂層
　　　　　７１ａ　　アンダーフィル部
　　　　　７１ｂ　　封止部
　　　　　　８　　　硬化体
　　　　　８１　　　硬化層
　　　　　８１ａ　　接続保護部
　　　　　８１ｂ　　チップ保護部
　　　　　８２　　　研削面
　　　　　８３　　　再配線層
　　　　　８３ａ　　再配線
　　　　　８４　　　再配線体
　　　　　８５　　　バンプ
　　　　　　９　　　半導体装置 202 Laminate 61 Chip mounting wafer 61a Semiconductor wafer 601a Electrode 601b Through electrode 61b Semiconductor chip 62 Bump 7 Sealing body 71 Resin layer 71a Underfill part 71b Sealing part 8 Curing body 81 Curing layer 81a Connection protection part 81b Chip protection part 82 Grinding surface 83 Rewiring layer 83a Rewiring 84 Rewiring body 85 Bump 9 Semiconductor device
　　　　　　１　　　積層体
　　　　　１３　　　フィルム
　　　　　１３ａ　　中央部
　　　　　１３ｂ　　周辺部 1 Laminated body 13 Film 13a Central part 13b Peripheral part
　　　　１０１　　　基台
　　　　１０２　　　加圧シリンダ下板
　　　　１０３　　　スライド移動テーブル
　　　　１０４　　　スライドシリンダ
　　　　１０５　　　下ヒータ板
　　　　１０６　　　下板部材
　　　　１０７　　　ステージ
　　　　１０８　　　支柱
　　　　１０９　　　加圧シリンダ上板
　　　　１１０　　　中間移動部材
　　　　１１１　　　上ヒータ板
　　　　１１２　　　上枠部材
　　　　１１３　　　内方枠体
　　　　１１３ａ　　枠状押え部
　　　　１１３ｂ　　ロッド
　　　　１１４　　　加圧シリンダ
　　　　１１５　　　シリンダロッド
　　　　１１６　　　真空・加圧口
　　　　１１７　　　平板
　　　　　Ｓ　　　　ストッパー
　　　　１２１　　　密閉容器
　　　　１３１　　　スペーサー 101 Base 102 Pressurizing cylinder lower plate 103 Slide moving table 104 Slide cylinder 105 Lower heater plate 106 Lower plate member 107 Stage 108 Post 109 Pressure cylinder upper plate 110 Intermediate moving member 111 Upper heater plate 112 Upper frame member 113 Inner frame Body 113a Frame-shaped presser 113b Rod 114 Pressure cylinder 115 Cylinder rod 116 Vacuum / pressure port 117 Flat plate S Stopper 121 Sealed container 131 Spacer
　　　　　　６　　　積層体 6. 6 laminates

Claims (10)

  1. 　基板及び前記基板にフリップチップ実装された半導体チップを備えるチップ実装基板並びに前記チップ実装基板上に配置された熱硬化性樹脂シートを備える積層物を加熱下で加圧することにより、前記半導体チップを前記熱硬化性樹脂シートで覆いつつ、前記基板と前記半導体チップのギャップに前記熱硬化性樹脂シートを充填する工程を含む半導体装置の製造方法。 Pressurizing under heating a chip mounting substrate comprising a substrate and a semiconductor chip flip-chip mounted on the substrate, and a thermosetting resin sheet disposed on the chip mounting substrate, the semiconductor chip A method for manufacturing a semiconductor device, comprising a step of filling the gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering with a thermosetting resin sheet.
  2. 　前記チップ実装基板は、前記半導体チップを複数備える請求項１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the chip mounting substrate includes a plurality of the semiconductor chips.
  3. 　前記熱硬化性樹脂シートの５０℃～１５０℃における最低溶融粘度が１０Ｐａ・Ｓ～５０００Ｐａ・Ｓである請求項１又は２に記載の半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin sheet has a minimum melt viscosity at 50 ° C. to 150 ° C. of 10 Pa · S to 5000 Pa · S.
  4. 　前記熱硬化性樹脂シートは無機充填剤を含む請求項１～３のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the thermosetting resin sheet contains an inorganic filler.
  5. 　前記熱硬化性樹脂シート中の前記無機充填剤の含有量が７０重量％～９０重量％である請求項４に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 4, wherein the content of the inorganic filler in the thermosetting resin sheet is 70 wt% to 90 wt%.
  6. 　前記無機充填剤の最大粒子径が３０μｍ以下である請求項４又は５に記載の半導体装置の製造方法。 6. The method of manufacturing a semiconductor device according to claim 4, wherein the inorganic filler has a maximum particle size of 30 [mu] m or less.
  7. 　前記熱硬化性樹脂シートはエポキシ樹脂を含む請求項１～６のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin sheet contains an epoxy resin.
  8. 　前記エポキシ樹脂はビスフェノールＡ型エポキシ樹脂を含み、
    　前記エポキシ樹脂１００重量％中の前記ビスフェノールＡ型エポキシ樹脂の含有量が２０重量％～７０重量％である請求項７に記載の半導体装置の製造方法。     The epoxy resin includes a bisphenol A type epoxy resin,
    The method of manufacturing a semiconductor device according to claim 7, wherein a content of the bisphenol A type epoxy resin in 100% by weight of the epoxy resin is 20% by weight to 70% by weight.
  9. 　前記熱硬化性樹脂シートはフェノールノボラック型硬化剤及び硬化促進剤を含む請求項１～８のいずれかに記載の半導体装置の製造方法。 9. The method of manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin sheet includes a phenol novolac type curing agent and a curing accelerator.
  10. 　５０℃～１５０℃における最低溶融粘度が１０Ｐａ・Ｓ～５０００Ｐａ・Ｓであり、
    　基板及び前記基板にフリップチップ実装された半導体チップを備えるチップ実装基板並びに前記チップ実装基板上に配置された熱硬化性樹脂シートを備える積層物を加熱下で加圧することにより、前記半導体チップを前記熱硬化性樹脂シートで覆いつつ、前記基板と前記半導体チップのギャップに前記熱硬化性樹脂シートを充填する工程を含む半導体装置の製造方法に使用するための熱硬化性樹脂シート。
     
          The minimum melt viscosity at 50 ° C. to 150 ° C. is 10 Pa · S to 5000 Pa · S,
    Pressurizing under heating a chip mounting substrate comprising a substrate and a semiconductor chip flip-chip mounted on the substrate, and a thermosetting resin sheet disposed on the chip mounting substrate, the semiconductor chip A thermosetting resin sheet for use in a method for manufacturing a semiconductor device, comprising a step of filling a gap between the substrate and the semiconductor chip with the thermosetting resin sheet while covering with a thermosetting resin sheet.

PCT/JP2014/083910 2013-12-26 2014-12-22 Method for producing semiconductor device, and thermosetting resin sheet WO2015098838A1 (en)

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