WO2015098502A1 - Electronic device - Google Patents

Electronic device Download PDF

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Publication number
WO2015098502A1
WO2015098502A1 PCT/JP2014/082573 JP2014082573W WO2015098502A1 WO 2015098502 A1 WO2015098502 A1 WO 2015098502A1 JP 2014082573 W JP2014082573 W JP 2014082573W WO 2015098502 A1 WO2015098502 A1 WO 2015098502A1
Authority
WO
WIPO (PCT)
Prior art keywords
wiring pattern
substrate
heat
hole
layer
Prior art date
Application number
PCT/JP2014/082573
Other languages
French (fr)
Japanese (ja)
Inventor
公教 尾崎
Original Assignee
株式会社 豊田自動織機
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 豊田自動織機 filed Critical 株式会社 豊田自動織機
Publication of WO2015098502A1 publication Critical patent/WO2015098502A1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/205—Heat-dissipating body thermally connected to heat generating element via thermal paths through printed circuit board [PCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0215—Grounding of printed circuits by connection to external grounding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4062—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to or through board or cabinet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/0999—Circuit printed on or in housing, e.g. housing as PCB; Circuit printed on the case of a component; PCB affixed to housing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10409—Screws

Definitions

  • the present invention relates to an electronic device.
  • the electronic device has, for example, a housing that is a heat dissipation member connected to the ground, and a substrate that is fastened to the housing with bolts and on which electronic components are mounted.
  • the substrate has a first wiring pattern electrically connected to the plus electrode of the electronic component, a second wiring pattern electrically connected to the ground electrode of the electronic component, and the first wiring pattern insulated from the second wiring pattern. And an insulating layer.
  • the housing has a ground potential. For this reason, the first wiring pattern is brought into contact with the casing, and the heat generated from the electronic component and transmitted to the plus electrode and the first wiring pattern cannot be transmitted to the casing and dissipated.
  • Patent Document 1 discloses an electronic circuit device as shown in FIG.
  • the electronic circuit device includes a multilayer substrate 100 and a heat generating electronic element 101 (electronic component) disposed on the multilayer substrate 100.
  • the heat radiation electrode 101 a (plus electrode) of the heat generating electronic element 101 is electrically connected to the surface conductor layer 102 (first wiring pattern) of the multilayer substrate 100.
  • An inner layer heat transfer conductor 104 is provided on the inner layer of the insulating member 103 (insulating layer) so as to overlap the surface conductor layer 102 in the thickness direction of the multilayer substrate 100. That is, the insulating member 103 is interposed between the surface conductor layer 102 and the inner layer heat transfer conductor 104, and the surface conductor layer 102 is insulated from the inner layer heat transfer conductor 104 by the insulating member 103.
  • a ground conductor 107 that is electrically connected to the housing 106 is provided around the bolt 105 on one surface of the multilayer substrate 100. Contact between the housing 106 and the ground conductor 107 is ensured by fastening the multilayer substrate 100 and the housing 106 with bolts 105. Further, in the multilayer substrate 100, a via 108 is formed between the ground conductor 107 and the inner layer heat transfer conductor 104. The ground conductor 107 and the inner layer heat transfer conductor 104 are electrically connected to each other through the via 108. The heat generated from the heat generating electronic element 101 is transmitted to the heat radiation electrode 101a and the surface conductor layer 102. The heat is transmitted to the housing 106 through the insulating member 103, the inner layer heat transfer conductor 104, the via 108, and the ground conductor 107, and is radiated by the housing 106.
  • the via 108 is formed in the multilayer substrate 100 as in the electronic circuit device of Patent Document 1, the strength of the peripheral portion where the via 108 is formed in the multilayer substrate 100 is lower than that in other portions. To do. For this reason, in the configuration in which the multilayer substrate 100 is fastened to the housing 106 with the bolts 105, if the vias 108 are formed around the bolts 105, the deformation of the multilayer substrate 100 is caused by the axial force associated with the fastening of the bolts 105. May occur.
  • the via 108 In order to cope with such a problem, it is conceivable to form the via 108 at a position where the axial force does not reach when the bolt 105 is fastened in the multilayer substrate 100.
  • the via 108 is formed at a position where the axial force does not reach when the bolt 105 is fastened, it is necessary to extend the ground conductor 107 to the position where the via 108 is formed.
  • the arrangement position of the surface conductor layer 102 is a position away from the periphery of the bolt 105 by the extent that the ground conductor 107 extends. Therefore, the arrangement position of the heat generating electronic element 101 is also arranged at a position away from the periphery of the bolt 105.
  • the multilayer substrate 100 is increased in size, and the heat transfer path from the heat generating electronic element 101 to the housing 106 is lengthened, so that the heat radiation efficiency of the heat generated from the heat generating electronic element 101 is deteriorated.
  • An object of the present invention is to provide an electronic device that can efficiently dissipate heat generated from an electronic component without increasing the size of a substrate.
  • One aspect for achieving the above object provides an electronic apparatus having a heat radiating member connected to a ground and a substrate on which electronic parts are mounted while being fastened to the heat radiating member by bolts.
  • the substrate includes a metal layer that is thermally coupled to the electronic component, a through hole through which the bolt can pass, and a heat transfer unit that is provided inside the through hole and has conductivity.
  • the heat transfer part and the metal layer are connected to each other.
  • the heat transfer part and the heat dissipation member are in contact with each other.
  • Sectional drawing which shows the electronic device in one Embodiment Sectional drawing which shows the electronic device in another embodiment. Sectional drawing which shows the conventional electronic device.
  • an electronic device 10 includes a casing 11 as a heat dissipation member connected to a ground, and a control as a board that is fastened to the casing 11 by a bolt 12 and on which an electronic component 13 is mounted. And a substrate 20.
  • the housing 11 is made of aluminum.
  • the housing 11 includes a cylindrical base portion 11a having a surface having an opening and a closed bottom portion, and a lid portion 11b that closes the opening of the base portion 11a.
  • a boss portion 11f into which the bolt 12 is screwed is provided so as to protrude.
  • the control board 20 is accommodated in the housing 11.
  • the electronic device 10 includes a power board 40 having a different type from the control board 20, that is, a different structure.
  • the power substrate 40 is a thick copper substrate.
  • the power substrate 40 includes a first metal plate 41 on which the power element 40 a is mounted, an insulating substrate 43 laminated on a part of the upper surface of the first metal plate 41, and a second metal laminated on the upper surface of the insulating substrate 43. And plate 42.
  • the first metal plate 41 is in contact with the base portion 11a and is thermally coupled to the base portion 11a.
  • the first metal plate 41 is made of a flat copper plate having a thickness of 0.5 mm.
  • the first metal plate 41 is patterned into a predetermined shape. A part of the first metal plate 41 is bent.
  • the second metal plate 42 is made of a flat copper plate having a thickness of 0.5 mm.
  • the second metal plate 42 is patterned into a predetermined shape.
  • the 1st metal plate 41 and the 2nd metal plate 42 comprise the circuit pattern which can respond to a large current, for example, 120A.
  • the insulating substrate 43 insulates the second metal plate 42 from the first metal plate 41.
  • the base 11a dissipates heat by removing the heat transmitted from the control board 20 and the power board 40 to the base 11a by the fluid passing through the fluid path 11c.
  • the control board 20 includes a first wiring pattern 21 electrically connected to the plus electrode 13a of the electronic component 13, a second wiring pattern 22 electrically connected to the ground electrode 13b of the electronic component 13, and a first wiring. And an insulating layer 23 for insulating the pattern 21 from the second wiring pattern 22.
  • Each of the first wiring pattern 21 and the second wiring pattern 22 is made of a sheet-like copper foil having a thickness of 70 ⁇ m to 105 ⁇ m.
  • Each of the first wiring pattern 21 and the second wiring pattern 22 is patterned into a predetermined shape.
  • the first wiring pattern 21 and the second wiring pattern 22 are provided on the surface (one surface) of the insulating layer 23.
  • the insulating layer 23 is made of a plate-like glass epoxy resin having a thickness of 1.6 mm.
  • the control board 20 has a through hole 30 through which the bolt 12 can pass.
  • a metal film 31 as a heat transfer portion is provided on the inner peripheral surface of the through hole 30, the front surface and the back surface of the insulating layer 23 around the through hole 30.
  • the metal film 31 is made of copper.
  • the metal film 31 is connected to the inner peripheral portion 31a formed on the inner peripheral surface of the through-hole 30, the back surface portion 31b continuous to the inner peripheral portion 31a and exposed to the back surface of the insulating layer 23, and connected to the inner peripheral portion 31a. And a surface portion 31 c exposed on the surface of the layer 23.
  • the metal film 31 is formed by performing metal plating on the inner peripheral surface of the through hole 30, the surface of the insulating layer 23, and the portion around the through hole 30 on the back surface. Specifically, first, electroless plating is performed to form a plating layer on the inner peripheral surface of the through hole 30, the surface of the insulating layer 23, and the portion around the through hole 30 on the back surface. Then, the metal film 31 is formed by further electrolytically plating the plated layer.
  • a metal layer 24 is embedded inside the insulating layer 23 so as to overlap the electronic component 13 in the thickness direction of the control board 20. Therefore, the insulating layer 23 is interposed between the first wiring pattern 21 and the metal layer 24.
  • the first wiring pattern 21 is insulated from the metal layer 24 by the insulating layer 23.
  • the metal layer 24 is made of a sheet-like copper foil having a thickness of 70 ⁇ m to 105 ⁇ m.
  • the metal layer 24 is thermally coupled to the first wiring pattern 21 (electronic component 13) via the insulating layer 23.
  • the metal layer 24 extends toward the through hole 30 from a position overlapping the electronic component 13 in the thickness direction of the control board 20.
  • An end portion of the metal layer 24 adjacent to the through hole 30 is connected to the inner peripheral portion 31 a of the metal film 31. Therefore, the metal layer 24 and the inner peripheral portion 31a of the metal film 31 are electrically connected to each other.
  • the control board 20 is placed on the boss portion 11f.
  • the opening of the base portion 11a is closed by the lid portion 11b. Since the bolt 12 is screwed into the boss portion 11f, the control board 20 and the lid portion 11b are attached to the base portion 11a.
  • the bolt 12 By fastening the bolt 12, contact between the back surface portion 31b of the metal film 31 and the boss portion 11f of the base portion 11a is secured, and contact between the surface portion 31c of the metal film 31 and the lid portion 11b is secured. . Therefore, the back surface portion 31b of the metal film 31 and the boss portion 11f of the base portion 11a are in contact with each other, and the surface portion 31c of the metal film 31 and the lid portion 11b are in contact with each other. Therefore, the metal film 31 and the metal layer 24 have a ground potential.
  • Heat generated from the electronic component 13 is transmitted to the plus electrode 13 a and the first wiring pattern 21.
  • the heat is transmitted to the boss portion 11f of the base portion 11a through the insulating layer 23, the metal layer 24, the inner peripheral portion 31a and the back surface portion 31b of the metal film 31, and is radiated by the base portion 11a.
  • the heat generated from the electronic component 13 is transmitted to the plus electrode 13 a and the first wiring pattern 21.
  • the heat is transmitted to the lid portion 11b through the insulating layer 23, the metal layer 24, the inner peripheral portion 31a and the surface portion 31c of the metal film 31, and is radiated by the lid portion 11b. That is, the heat generated from the electronic component 13 is radiated using the metal film 31 as a heat transfer path.
  • a metal film 31 as a heat transfer portion is provided on the inner peripheral surface of the through hole 30, and on the front and back surfaces of the insulating layer 23 around the through hole 30.
  • the metal film 31 and the metal layer 24 are connected to each other, and the metal film 31 and the housing 11 are in contact with each other. According to this, heat generated from the electronic component 13 is transmitted to the housing 11 through the metal layer 24 and the metal film 31 and is radiated by the housing 11. Therefore, since the metal film 31 provided on the inside of the through hole 30 and the portion around the through hole 30 on the front and back surfaces of the insulating layer 23 is used as a heat transfer path, the heat generated from the electronic component 13 is radiated.
  • the metal film 31 is provided by performing metal plating on the inner peripheral surface of the through hole 30, the front surface and the back surface of the insulating layer 23 around the through hole 30. According to this, compared with the case where the cylindrical member which has electroconductivity as a heat transfer part is arrange
  • the metal layer 24 Since the metal layer 24 has a ground potential, for example, the first wiring pattern 21 is brought into contact with the metal layer 24, and the heat transferred to the positive electrode 13 a and the first wiring pattern 21 is transferred to the metal layer 24. It is not possible. However, in the present embodiment, the insulating layer 23 is interposed between the first wiring pattern 21 and the metal layer 24. Therefore, heat generated from the electronic component 13 is transmitted to the plus electrode 13 a and the first wiring pattern 21 in a state where the first wiring pattern 21 is insulated from the metal layer 24 by the insulating layer 23. The heat can be transferred to the housing 11 through the insulating layer 23, the metal layer 24, and the metal film 31, and can be radiated by the housing 11.
  • the back surface portion 31b and the front surface portion 31c of the metal film 31 are formed at portions around the through hole 30 on the front surface and the back surface of the insulating layer 23. According to this, without forming the back surface portion 31b and the surface portion 31c of the metal film 31, the end portions of the front surface and the back surface of the insulating layer 23 in the inner peripheral portion 31a of the metal film 31 are connected to the lid portion 11b and the boss portion 11f. As compared with the case where they are brought into contact with each other, it is easy to secure a contact area with the lid portion 11b and the boss portion 11f.
  • the second wiring pattern 22 electrically connected to the ground electrode 13 b of the electronic component 13 may contact the metal film 31. Thereby, heat generated from the electronic component 13 is transmitted to the ground electrode 13 b and the second wiring pattern 22. The heat may be transmitted to the housing 11 through the metal film 31 and radiated by the housing 11.
  • the second wiring pattern 22 functions as a metal layer that is thermally coupled to the electronic component 13 and connected to the metal film 31.
  • the back surface portion 31b and the front surface portion 31c of the metal film 31 may be omitted. It is only necessary that the inner peripheral portion 31 a of the metal film 31 is formed on the inner peripheral surface of the through hole 30 by performing metal plating on at least the inner peripheral surface of the through hole 30. In this case, the front and back end portions of the insulating layer 23 in the inner peripheral portion 31a of the metal film 31 need to be in contact with the lid portion 11b and the boss portion 11f, respectively.
  • a conductive adhesive may be applied as a heat transfer portion instead of the metal film 31 on the inner peripheral surface of the through hole 30, the front surface and the back surface of the insulating layer 23 around the through hole 30. Good.
  • FIG. instead of the metal film 31, you may arrange
  • the metal film 31 may be formed of a conductive material other than copper.
  • casing 11 may be formed with electroconductive materials other than aluminum.
  • the first wiring pattern 21 and the second wiring pattern 22 may be formed of a conductive material other than copper foil.
  • the insulating layer 23 may be formed of a resin material other than the glass epoxy resin.
  • the thicknesses of the first wiring pattern 21, the second wiring pattern 22, and the insulating layer 23 are not particularly limited.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

This electronic device contains a grounded heat-dissipating member and a substrate. An electronic component is mounted on the substrate, and the substrate is fastened to the heat-dissipating member by a bolt. The substrate has the following: a metal layer that is thermally coupled to the electronic component; a through-hole through which the bolt can pass; and an electrically conductive heat-transmitting part provided on the inside of said through-hole. The heat-transmitting part is connected to the metal layer and contacts the heat-dissipating member.

Description

電子機器Electronics
　本発明は、電子機器に関する。 The present invention relates to an electronic device.
　電子機器は、例えば、グランドに接続される放熱部材である筐体と、筐体に対してボルトにより締結されるとともに電子部品が搭載される基板とを有している。基板は、電子部品のプラス電極と電気的に接続される第１配線パターンと、電子部品のグランド電極と電気的に接続される第２配線パターンと、第１配線パターンを第２配線パターンから絶縁する絶縁層とを有する。ここで、筐体はグランド電位を有する。そのため、第１配線パターンを筐体に接触させて、電子部品から発せられてプラス電極及び第１配線パターンに伝達された熱を、筐体に伝達させて放熱することができない。 The electronic device has, for example, a housing that is a heat dissipation member connected to the ground, and a substrate that is fastened to the housing with bolts and on which electronic components are mounted. The substrate has a first wiring pattern electrically connected to the plus electrode of the electronic component, a second wiring pattern electrically connected to the ground electrode of the electronic component, and the first wiring pattern insulated from the second wiring pattern. And an insulating layer. Here, the housing has a ground potential. For this reason, the first wiring pattern is brought into contact with the casing, and the heat generated from the electronic component and transmitted to the plus electrode and the first wiring pattern cannot be transmitted to the casing and dissipated.
　特許文献１では、図３に示すような電子回路装置を開示している。該電子回路装置は、多層基板１００と、該多層基板１００上に配置された発熱電子素子１０１（電子部品）とを備える。発熱電子素子１０１の放熱用電極１０１ａ（プラス電極）は、多層基板１００の表面導体層１０２（第１配線パターン）と電気的に接続されている。多層基板１００の厚さ方向において、表面導体層１０２と重なるように絶縁部材１０３（絶縁層）の内層に内層伝熱導体１０４が設けられている。すなわち、表面導体層１０２と内層伝熱導体１０４との間には、絶縁部材１０３が介在されており、表面導体層１０２は内層伝熱導体１０４から絶縁部材１０３により絶縁されている。 Patent Document 1 discloses an electronic circuit device as shown in FIG. The electronic circuit device includes a multilayer substrate 100 and a heat generating electronic element 101 (electronic component) disposed on the multilayer substrate 100. The heat radiation electrode 101 a (plus electrode) of the heat generating electronic element 101 is electrically connected to the surface conductor layer 102 (first wiring pattern) of the multilayer substrate 100. An inner layer heat transfer conductor 104 is provided on the inner layer of the insulating member 103 (insulating layer) so as to overlap the surface conductor layer 102 in the thickness direction of the multilayer substrate 100. That is, the insulating member 103 is interposed between the surface conductor layer 102 and the inner layer heat transfer conductor 104, and the surface conductor layer 102 is insulated from the inner layer heat transfer conductor 104 by the insulating member 103.
　さらに、多層基板１００の一面におけるボルト１０５の周辺には、筐体１０６に電気的に接続される接地導体１０７が設けられている。筐体１０６と接地導体１０７との接触は、ボルト１０５によって多層基板１００と筐体１０６とが締結されることにより確保されている。さらに、多層基板１００において、接地導体１０７と内層伝熱導体１０４との間にはビア１０８が形成されている。接地導体１０７と内層伝熱導体１０４とがビア１０８を介して互いに電気的に接続されている。そして、発熱電子素子１０１から発せられる熱は放熱用電極１０１ａ及び表面導体層１０２に伝達される。その熱は、絶縁部材１０３、内層伝熱導体１０４、ビア１０８及び接地導体１０７を介して筐体１０６に伝達され、筐体１０６により放熱される。 Furthermore, a ground conductor 107 that is electrically connected to the housing 106 is provided around the bolt 105 on one surface of the multilayer substrate 100. Contact between the housing 106 and the ground conductor 107 is ensured by fastening the multilayer substrate 100 and the housing 106 with bolts 105. Further, in the multilayer substrate 100, a via 108 is formed between the ground conductor 107 and the inner layer heat transfer conductor 104. The ground conductor 107 and the inner layer heat transfer conductor 104 are electrically connected to each other through the via 108. The heat generated from the heat generating electronic element 101 is transmitted to the heat radiation electrode 101a and the surface conductor layer 102. The heat is transmitted to the housing 106 through the insulating member 103, the inner layer heat transfer conductor 104, the via 108, and the ground conductor 107, and is radiated by the housing 106.
特開２００８－１３０６８４号公報JP 2008-130684 A
　しかしながら、特許文献１の電子回路装置のように、多層基板１００にビア１０８が形成されると、多層基板１００において、ビア１０８が形成された周辺の部位の強度は、その他の部位に比べて低下する。このため、多層基板１００を筐体１０６に対してボルト１０５で締結する構成において、ボルト１０５の周辺にビア１０８が形成されていると、ボルト１０５の締結に伴う軸力によって、多層基板１００の変形が生じる虞がある。 However, when the via 108 is formed in the multilayer substrate 100 as in the electronic circuit device of Patent Document 1, the strength of the peripheral portion where the via 108 is formed in the multilayer substrate 100 is lower than that in other portions. To do. For this reason, in the configuration in which the multilayer substrate 100 is fastened to the housing 106 with the bolts 105, if the vias 108 are formed around the bolts 105, the deformation of the multilayer substrate 100 is caused by the axial force associated with the fastening of the bolts 105. May occur.
　そういった問題に対処するために、多層基板１００において、ボルト１０５の締結時の軸力が及ばない位置にビア１０８を形成することが考えられる。しかし、ボルト１０５の締結時の軸力が及ばない位置にビア１０８を形成すると、接地導体１０７をビア１０８の形成位置まで延ばす必要がある。さらに、表面導体層１０２の配置位置が、接地導体１０７が延びた分だけ、ボルト１０５の周辺から離れた位置となる。そのため、発熱電子素子１０１の配置位置も、ボルト１０５の周辺から離れた位置に配置されることになる。その結果、多層基板１００が大型化するとともに、発熱電子素子１０１から筐体１０６までの熱伝達経路も長くなって発熱電子素子１０１から発せられる熱の放熱効率が悪化する。 In order to cope with such a problem, it is conceivable to form the via 108 at a position where the axial force does not reach when the bolt 105 is fastened in the multilayer substrate 100. However, if the via 108 is formed at a position where the axial force does not reach when the bolt 105 is fastened, it is necessary to extend the ground conductor 107 to the position where the via 108 is formed. Further, the arrangement position of the surface conductor layer 102 is a position away from the periphery of the bolt 105 by the extent that the ground conductor 107 extends. Therefore, the arrangement position of the heat generating electronic element 101 is also arranged at a position away from the periphery of the bolt 105. As a result, the multilayer substrate 100 is increased in size, and the heat transfer path from the heat generating electronic element 101 to the housing 106 is lengthened, so that the heat radiation efficiency of the heat generated from the heat generating electronic element 101 is deteriorated.
　本発明の目的は、基板が大型化することなく、電子部品から発せられる熱を効率良く放熱することができる電子機器を提供することにある。 An object of the present invention is to provide an electronic device that can efficiently dissipate heat generated from an electronic component without increasing the size of a substrate.
　上記目的を達成する一態様は、グランドに接続される放熱部材と、前記放熱部材に対してボルトにより締結されるとともに電子部品が搭載される基板と、を有する電子機器を提供する。前記基板は、前記電子部品と熱的に結合される金属層と、前記ボルトが通過可能な貫通孔と、前記貫通孔の内側に設けられ導電性を有する熱伝達部とを有する。前記熱伝達部と前記金属層とが互いに連結されている。前記熱伝達部と前記放熱部材とが互いに接触している。 One aspect for achieving the above object provides an electronic apparatus having a heat radiating member connected to a ground and a substrate on which electronic parts are mounted while being fastened to the heat radiating member by bolts. The substrate includes a metal layer that is thermally coupled to the electronic component, a through hole through which the bolt can pass, and a heat transfer unit that is provided inside the through hole and has conductivity. The heat transfer part and the metal layer are connected to each other. The heat transfer part and the heat dissipation member are in contact with each other.
一実施形態における電子機器を示す断面図。Sectional drawing which shows the electronic device in one Embodiment. 別の実施形態における電子機器を示す断面図。Sectional drawing which shows the electronic device in another embodiment. 従来の電子機器を示す断面図。Sectional drawing which shows the conventional electronic device.
　以下、電子機器を具体化した一実施形態を図１にしたがって説明する。
　図１に示すように、電子機器１０は、グランドに接続される放熱部材としての筐体１１と、筐体１１に対してボルト１２により締結されるとともに電子部品１３が搭載される基板としての制御基板２０とを有する。筐体１１は、アルミニウムにより形成される。筐体１１は、開口を有する一面と閉塞された底部とを備える筒状の基部１１ａと、基部１１ａの開口を塞ぐ蓋部１１ｂとから構成されている。基部１１ａの内底面には、ボルト１２がねじ込まれるボス部１１ｆが突出するように設けられている。制御基板２０は、筐体１１の内部に収容されている。 Hereinafter, an embodiment embodying an electronic device will be described with reference to FIG.
As shown in FIG. 1, an electronic device 10 includes a casing 11 as a heat dissipation member connected to a ground, and a control as a board that is fastened to the casing 11 by a bolt 12 and on which an electronic component 13 is mounted. And a substrate 20. The housing 11 is made of aluminum. The housing 11 includes a cylindrical base portion 11a having a surface having an opening and a closed bottom portion, and a lid portion 11b that closes the opening of the base portion 11a. On the inner bottom surface of the base portion 11a, a boss portion 11f into which the bolt 12 is screwed is provided so as to protrude. The control board 20 is accommodated in the housing 11.
　また、電子機器１０は、制御基板２０とは異なる種類、即ち異なる構造を有するパワー基板４０を備えている。パワー基板４０は、厚銅基板である。パワー基板４０は、パワー素子４０ａが搭載される第１金属板４１と、第１金属板４１の一部の上面に積層される絶縁基板４３と、絶縁基板４３の上面に積層される第２金属板４２とからなる。 The electronic device 10 includes a power board 40 having a different type from the control board 20, that is, a different structure. The power substrate 40 is a thick copper substrate. The power substrate 40 includes a first metal plate 41 on which the power element 40 a is mounted, an insulating substrate 43 laminated on a part of the upper surface of the first metal plate 41, and a second metal laminated on the upper surface of the insulating substrate 43. And plate 42.
　第１金属板４１は、基部１１ａと接触しており、基部１１ａと熱的に結合されている。第１金属板４１は、厚さ０．５ｍｍの平板状の銅板からなる。第１金属板４１は、所定の形状にパターニングされている。また、第１金属板４１の一部は、折り曲げられている。第２金属板４２は厚さ０．５ｍｍの平板状の銅板からなる。第２金属板４２は、所定の形状にパターニングされている。そして、第１金属板４１及び第２金属板４２は、大電流、例えば１２０Ａに対応可能な回路パターンを構成している。絶縁基板４３は、第１金属板４１から第２金属板４２を絶縁している。 The first metal plate 41 is in contact with the base portion 11a and is thermally coupled to the base portion 11a. The first metal plate 41 is made of a flat copper plate having a thickness of 0.5 mm. The first metal plate 41 is patterned into a predetermined shape. A part of the first metal plate 41 is bent. The second metal plate 42 is made of a flat copper plate having a thickness of 0.5 mm. The second metal plate 42 is patterned into a predetermined shape. And the 1st metal plate 41 and the 2nd metal plate 42 comprise the circuit pattern which can respond to a large current, for example, 120A. The insulating substrate 43 insulates the second metal plate 42 from the first metal plate 41.
　基部１１ａの底部の内部には、冷却媒体としての流体、例えば水が通過する流体経路１１ｃが形成されている。基部１１ａは、制御基板２０及びパワー基板４０から基部１１ａに伝達される熱を、流体経路１１ｃを通過する流体により奪うことで放熱する。 A fluid path 11c through which a fluid as a cooling medium, for example, water passes, is formed inside the bottom of the base 11a. The base 11a dissipates heat by removing the heat transmitted from the control board 20 and the power board 40 to the base 11a by the fluid passing through the fluid path 11c.
　制御基板２０は、電子部品１３のプラス電極１３ａと電気的に接続される第１配線パターン２１と、電子部品１３のグランド電極１３ｂと電気的に接続される第２配線パターン２２と、第１配線パターン２１を第２配線パターン２２から絶縁する絶縁層２３とを有する。第１配線パターン２１及び第２配線パターン２２の各々は、厚さ７０μｍ～１０５μｍのシート状の銅箔からなる。第１配線パターン２１及び第２配線パターン２２の各々は、所定の形状にパターニングされている。第１配線パターン２１及び第２配線パターン２２は、絶縁層２３の表面（一面）に設けられている。絶縁層２３は、厚さ１．６ｍｍの板状のガラスエポキシ樹脂からなる。 The control board 20 includes a first wiring pattern 21 electrically connected to the plus electrode 13a of the electronic component 13, a second wiring pattern 22 electrically connected to the ground electrode 13b of the electronic component 13, and a first wiring. And an insulating layer 23 for insulating the pattern 21 from the second wiring pattern 22. Each of the first wiring pattern 21 and the second wiring pattern 22 is made of a sheet-like copper foil having a thickness of 70 μm to 105 μm. Each of the first wiring pattern 21 and the second wiring pattern 22 is patterned into a predetermined shape. The first wiring pattern 21 and the second wiring pattern 22 are provided on the surface (one surface) of the insulating layer 23. The insulating layer 23 is made of a plate-like glass epoxy resin having a thickness of 1.6 mm.
　制御基板２０は、ボルト１２が通過可能な貫通孔３０を有する。貫通孔３０の内周面、絶縁層２３の表面及び裏面における貫通孔３０周りの部位には、熱伝達部としての金属膜３１が設けられている。金属膜３１は銅からなる。金属膜３１は、貫通孔３０の内周面に形成される内周部３１ａと、内周部３１ａに連なるとともに絶縁層２３の裏面に露出する裏面部３１ｂと、内周部３１ａに連なるとともに絶縁層２３の表面に露出する表面部３１ｃとを含む。 The control board 20 has a through hole 30 through which the bolt 12 can pass. A metal film 31 as a heat transfer portion is provided on the inner peripheral surface of the through hole 30, the front surface and the back surface of the insulating layer 23 around the through hole 30. The metal film 31 is made of copper. The metal film 31 is connected to the inner peripheral portion 31a formed on the inner peripheral surface of the through-hole 30, the back surface portion 31b continuous to the inner peripheral portion 31a and exposed to the back surface of the insulating layer 23, and connected to the inner peripheral portion 31a. And a surface portion 31 c exposed on the surface of the layer 23.
　金属膜３１は、貫通孔３０の内周面、絶縁層２３の表面及び裏面における貫通孔３０周りの部位に金属メッキを施すことにより形成されている。具体的には、まず、無電解メッキを施して貫通孔３０の内周面、絶縁層２３の表面及び裏面における貫通孔３０周りの部位にメッキ層が形成される。その後、メッキ層に対してさらに電解メッキを施すことで金属膜３１が形成される。 The metal film 31 is formed by performing metal plating on the inner peripheral surface of the through hole 30, the surface of the insulating layer 23, and the portion around the through hole 30 on the back surface. Specifically, first, electroless plating is performed to form a plating layer on the inner peripheral surface of the through hole 30, the surface of the insulating layer 23, and the portion around the through hole 30 on the back surface. Then, the metal film 31 is formed by further electrolytically plating the plated layer.
　絶縁層２３の内側には、制御基板２０の厚さ方向において電子部品１３と重なるように金属層２４が埋設されている。よって、第１配線パターン２１と金属層２４との間には、絶縁層２３が介在されている。第１配線パターン２１は、金属層２４から絶縁層２３により絶縁されている。金属層２４は、厚さ７０μｍ～１０５μｍのシート状の銅箔からなる。金属層２４は、絶縁層２３を介して第１配線パターン２１（電子部品１３）と熱的に結合されている。金属層２４は、制御基板２０の厚さ方向において電子部品１３と重なる位置から貫通孔３０に向けて延びている。金属層２４における貫通孔３０に近接する端部は金属膜３１の内周部３１ａに連結されている。よって、金属層２４と金属膜３１の内周部３１ａとは互いに電気的に接続されている。 A metal layer 24 is embedded inside the insulating layer 23 so as to overlap the electronic component 13 in the thickness direction of the control board 20. Therefore, the insulating layer 23 is interposed between the first wiring pattern 21 and the metal layer 24. The first wiring pattern 21 is insulated from the metal layer 24 by the insulating layer 23. The metal layer 24 is made of a sheet-like copper foil having a thickness of 70 μm to 105 μm. The metal layer 24 is thermally coupled to the first wiring pattern 21 (electronic component 13) via the insulating layer 23. The metal layer 24 extends toward the through hole 30 from a position overlapping the electronic component 13 in the thickness direction of the control board 20. An end portion of the metal layer 24 adjacent to the through hole 30 is connected to the inner peripheral portion 31 a of the metal film 31. Therefore, the metal layer 24 and the inner peripheral portion 31a of the metal film 31 are electrically connected to each other.
　電子機器１０において、ボス部１１ｆ上には制御基板２０が載置される。蓋部１１ｂによって基部１１ａの開口が閉鎖される。ボルト１２がボス部１１ｆにねじ込まれることより、制御基板２０及び蓋部１１ｂが基部１１ａに対して取り付けられている。そして、ボルト１２の締結によって、金属膜３１の裏面部３１ｂと基部１１ａのボス部１１ｆとの接触が確保されるとともに、金属膜３１の表面部３１ｃと蓋部１１ｂとの接触が確保されている。よって、金属膜３１の裏面部３１ｂと基部１１ａのボス部１１ｆとが互いに接触しているとともに、金属膜３１の表面部３１ｃと蓋部１１ｂとが互いに接触している。よって、金属膜３１及び金属層２４はグランド電位を有する。 In the electronic device 10, the control board 20 is placed on the boss portion 11f. The opening of the base portion 11a is closed by the lid portion 11b. Since the bolt 12 is screwed into the boss portion 11f, the control board 20 and the lid portion 11b are attached to the base portion 11a. By fastening the bolt 12, contact between the back surface portion 31b of the metal film 31 and the boss portion 11f of the base portion 11a is secured, and contact between the surface portion 31c of the metal film 31 and the lid portion 11b is secured. . Therefore, the back surface portion 31b of the metal film 31 and the boss portion 11f of the base portion 11a are in contact with each other, and the surface portion 31c of the metal film 31 and the lid portion 11b are in contact with each other. Therefore, the metal film 31 and the metal layer 24 have a ground potential.
　次に、本実施形態の作用について説明する。
　電子部品１３から発せられた熱は、プラス電極１３ａ及び第１配線パターン２１に伝達される。その熱は、絶縁層２３、金属層２４、金属膜３１の内周部３１ａ及び裏面部３１ｂを介して基部１１ａのボス部１１ｆに伝達され、基部１１ａにより放熱される。また、電子部品１３から発せられた熱は、プラス電極１３ａ及び第１配線パターン２１に伝達される。その熱は、絶縁層２３、金属層２４、金属膜３１の内周部３１ａ及び表面部３１ｃを介して蓋部１１ｂに伝達され、蓋部１１ｂにより放熱される。すなわち、金属膜３１を熱伝達経路として、電子部品１３から発せられる熱が放熱される。 Next, the operation of this embodiment will be described.
Heat generated from the electronic component 13 is transmitted to the plus electrode 13 a and the first wiring pattern 21. The heat is transmitted to the boss portion 11f of the base portion 11a through the insulating layer 23, the metal layer 24, the inner peripheral portion 31a and the back surface portion 31b of the metal film 31, and is radiated by the base portion 11a. The heat generated from the electronic component 13 is transmitted to the plus electrode 13 a and the first wiring pattern 21. The heat is transmitted to the lid portion 11b through the insulating layer 23, the metal layer 24, the inner peripheral portion 31a and the surface portion 31c of the metal film 31, and is radiated by the lid portion 11b. That is, the heat generated from the electronic component 13 is radiated using the metal film 31 as a heat transfer path.
　上記実施形態では以下の効果を得ることができる。
　（１）貫通孔３０の内周面、絶縁層２３の表面及び裏面における貫通孔３０周りの部位に、熱伝達部としての金属膜３１が設けられている。そして、金属膜３１と金属層２４とが互いに連結され、金属膜３１と筐体１１とが互いに接触する。これによれば、電子部品１３から発せられる熱が、金属層２４及び金属膜３１を介して筐体１１に伝達され、筐体１１により放熱される。よって、貫通孔３０の内側、絶縁層２３の表面及び裏面における貫通孔３０周りの部位に設けられた金属膜３１が熱伝達経路として利用されるため、電子部品１３から発せられる熱を放熱するために、制御基板２０にビアを形成する必要が無い。しがたって、制御基板２０にビアを形成して電子部品１３から発せられる熱を放熱する構成に比べると、制御基板２０が大型化することなく、電子部品１３から発せられる熱を効率良く放熱することができる。 In the above embodiment, the following effects can be obtained.
(1) A metal film 31 as a heat transfer portion is provided on the inner peripheral surface of the through hole 30, and on the front and back surfaces of the insulating layer 23 around the through hole 30. The metal film 31 and the metal layer 24 are connected to each other, and the metal film 31 and the housing 11 are in contact with each other. According to this, heat generated from the electronic component 13 is transmitted to the housing 11 through the metal layer 24 and the metal film 31 and is radiated by the housing 11. Therefore, since the metal film 31 provided on the inside of the through hole 30 and the portion around the through hole 30 on the front and back surfaces of the insulating layer 23 is used as a heat transfer path, the heat generated from the electronic component 13 is radiated. In addition, there is no need to form a via in the control board 20. Therefore, compared to a configuration in which vias are formed in the control board 20 and heat generated from the electronic component 13 is radiated, heat generated from the electronic component 13 is efficiently radiated without increasing the size of the control board 20. be able to.
　（２）金属膜３１は、貫通孔３０の内周面、絶縁層２３の表面及び裏面における貫通孔３０周りの部位に金属メッキを施すことにより設けられている。これによれば、例えば、貫通孔３０の内側に、熱伝達部として、導電性を有する筒部材を配置する場合に比べると、熱伝達経路を確保し易くすることができる。 (2) The metal film 31 is provided by performing metal plating on the inner peripheral surface of the through hole 30, the front surface and the back surface of the insulating layer 23 around the through hole 30. According to this, compared with the case where the cylindrical member which has electroconductivity as a heat transfer part is arrange | positioned inside the through-hole 30, for example, it can make it easy to ensure a heat transfer path | route.
　（３）金属層２４はグランド電位を有するため、例えば、第１配線パターン２１を金属層２４に接触させて、プラス電極１３ａ及び第１配線パターン２１に伝達した熱を、金属層２４に伝達させることはできない。しかし、本実施形態では、第１配線パターン２１と金属層２４との間に絶縁層２３が介在されている。このため、第１配線パターン２１を金属層２４から絶縁層２３により絶縁した状態で、電子部品１３から発せられた熱がプラス電極１３ａ及び第１配線パターン２１に伝達される。その熱を、絶縁層２３、金属層２４及び金属膜３１を介して筐体１１に伝達させて、筐体１１により放熱することができる。 (3) Since the metal layer 24 has a ground potential, for example, the first wiring pattern 21 is brought into contact with the metal layer 24, and the heat transferred to the positive electrode 13 a and the first wiring pattern 21 is transferred to the metal layer 24. It is not possible. However, in the present embodiment, the insulating layer 23 is interposed between the first wiring pattern 21 and the metal layer 24. Therefore, heat generated from the electronic component 13 is transmitted to the plus electrode 13 a and the first wiring pattern 21 in a state where the first wiring pattern 21 is insulated from the metal layer 24 by the insulating layer 23. The heat can be transferred to the housing 11 through the insulating layer 23, the metal layer 24, and the metal film 31, and can be radiated by the housing 11.
　（４）絶縁層２３の表面及び裏面における貫通孔３０周りの部位に、金属膜３１の裏面部３１ｂ及び表面部３１ｃが形成されている。これによれば、金属膜３１の裏面部３１ｂ及び表面部３１ｃを形成せずに、金属膜３１の内周部３１ａにおける絶縁層２３の表面及び裏面の端部を、蓋部１１ｂ及びボス部１１ｆにそれぞれ接触させる場合に比べると、蓋部１１ｂ及びボス部１１ｆに対する接触面積を確保し易くなる。 (4) The back surface portion 31b and the front surface portion 31c of the metal film 31 are formed at portions around the through hole 30 on the front surface and the back surface of the insulating layer 23. According to this, without forming the back surface portion 31b and the surface portion 31c of the metal film 31, the end portions of the front surface and the back surface of the insulating layer 23 in the inner peripheral portion 31a of the metal film 31 are connected to the lid portion 11b and the boss portion 11f. As compared with the case where they are brought into contact with each other, it is easy to secure a contact area with the lid portion 11b and the boss portion 11f.
　（５）本実施形態では、電子部品１３から発せられる熱を放熱するための熱伝達経路を確保するために、制御基板２０にビアが形成されていない。そのため、制御基板２０自体の十分な強度を確保することができる。 (5) In the present embodiment, no via is formed in the control board 20 in order to secure a heat transfer path for radiating the heat generated from the electronic component 13. Therefore, sufficient strength of the control board 20 itself can be ensured.
　なお、上記実施形態は以下のように変更してもよい。
　○　図２に示すように、電子部品１３のグランド電極１３ｂに電気的に接続される第２配線パターン２２が、金属膜３１に接触してもよい。それにより、電子部品１３から発せられた熱がグランド電極１３ｂ及び第２配線パターン２２に伝達される。その熱が、金属膜３１を介して筐体１１に伝達され、筐体１１により放熱されてもよい。この場合、第２配線パターン２２は、電子部品１３と熱的に結合されるとともに金属膜３１と連結される金属層として機能する。 In addition, you may change the said embodiment as follows.
As shown in FIG. 2, the second wiring pattern 22 electrically connected to the ground electrode 13 b of the electronic component 13 may contact the metal film 31. Thereby, heat generated from the electronic component 13 is transmitted to the ground electrode 13 b and the second wiring pattern 22. The heat may be transmitted to the housing 11 through the metal film 31 and radiated by the housing 11. In this case, the second wiring pattern 22 functions as a metal layer that is thermally coupled to the electronic component 13 and connected to the metal film 31.
　○　実施形態において、金属膜３１の裏面部３１ｂ及び表面部３１ｃが省略されてもよい。少なくとも貫通孔３０の内周面に金属メッキを施すことにより、貫通孔３０の内周面に金属膜３１の内周部３１ａが形成されていればよい。この場合、金属膜３１の内周部３１ａにおける絶縁層２３の表面及び裏面の端部が、蓋部１１ｂ及びボス部１１ｆにそれぞれ接触している必要がある。 In the embodiment, the back surface portion 31b and the front surface portion 31c of the metal film 31 may be omitted. It is only necessary that the inner peripheral portion 31 a of the metal film 31 is formed on the inner peripheral surface of the through hole 30 by performing metal plating on at least the inner peripheral surface of the through hole 30. In this case, the front and back end portions of the insulating layer 23 in the inner peripheral portion 31a of the metal film 31 need to be in contact with the lid portion 11b and the boss portion 11f, respectively.
　○　実施形態において、貫通孔３０の内周面、絶縁層２３の表面及び裏面における貫通孔３０周りの部位に、金属膜３１に代えて、熱伝達部として、導電性接着剤を塗布してもよい。 ○ In the embodiment, a conductive adhesive may be applied as a heat transfer portion instead of the metal film 31 on the inner peripheral surface of the through hole 30, the front surface and the back surface of the insulating layer 23 around the through hole 30. Good.
　○　実施形態において、金属膜３１の内側に、熱伝達部として、導電性を有する筒部材を配置してもよい。
　○　実施形態において、金属膜３１に代えて、熱伝達部として、導電性を有する筒部材を配置してもよい。 In embodiment, you may arrange | position the cylindrical member which has electroconductivity as a heat transfer part inside the metal film 31. FIG.
In embodiment, instead of the metal film 31, you may arrange | position the cylindrical member which has electroconductivity as a heat transfer part.
　○　実施形態において、金属膜３１は、銅以外の導電性を有する材料で形成されていてもよい。
　○　実施形態において、筐体１１は、アルミニウム以外の導電性材料により形成されていてもよい。 In the embodiment, the metal film 31 may be formed of a conductive material other than copper.
(Circle) in embodiment, the housing | casing 11 may be formed with electroconductive materials other than aluminum.
　○　実施形態において、第１配線パターン２１及び第２配線パターン２２は、銅箔以外の導電性材料により形成されていてもよい。
　○　実施形態において、絶縁層２３は、ガラスエポキシ樹脂以外の樹脂材料により形成されていてもよい。 In the embodiment, the first wiring pattern 21 and the second wiring pattern 22 may be formed of a conductive material other than copper foil.
In the embodiment, the insulating layer 23 may be formed of a resin material other than the glass epoxy resin.
　○　実施形態において、第１配線パターン２１、第２配線パターン２２及び絶縁層２３の厚さは、特に限定されるものではない。 In the embodiment, the thicknesses of the first wiring pattern 21, the second wiring pattern 22, and the insulating layer 23 are not particularly limited.

Claims (6)

  1. 　グランドに接続される放熱部材と、
    　前記放熱部材に対してボルトにより締結されるとともに電子部品が搭載される基板と、を有し、
    　前記基板は、
    　前記電子部品と熱的に結合される金属層と、
    　前記ボルトが通過可能な貫通孔と、
    　前記貫通孔の内側に設けられ導電性を有する熱伝達部とを有し、
    　前記熱伝達部と前記金属層とが互いに連結されているとともに、前記熱伝達部と前記放熱部材とが互いに接触している、電子機器。     A heat dissipating member connected to the ground;
    A substrate that is fastened with bolts to the heat dissipation member and on which electronic components are mounted;
    The substrate is
    A metal layer thermally coupled to the electronic component;
    A through hole through which the bolt can pass;
    A heat transfer portion provided inside the through hole and having conductivity,
    The electronic device, wherein the heat transfer unit and the metal layer are connected to each other, and the heat transfer unit and the heat dissipation member are in contact with each other.
  2. 　前記熱伝達部は、少なくとも前記貫通孔の内周面に設けられた金属膜である、請求項１に記載の電子機器。 2. The electronic device according to claim 1, wherein the heat transfer part is a metal film provided on at least an inner peripheral surface of the through hole.
  3. 　前記金属膜は金属メッキを施すことにより形成される、請求項１に記載の電子機器。 The electronic device according to claim 1, wherein the metal film is formed by performing metal plating.
  4. 　前記基板は、
    　前記電子部品のプラス電極と電気的に接続される第１配線パターンと、
    　前記電子部品のグランド電極と電気的に接続される第２配線パターンと、
    　前記第１配線パターンと前記第２配線パターンとを絶縁する絶縁層とを有し、
    　前記第１配線パターンと前記金属層との間には、前記絶縁層が介在されている、請求項１～３の何れか一項に記載の電子機器。     The substrate is
    A first wiring pattern electrically connected to the plus electrode of the electronic component;
    A second wiring pattern electrically connected to a ground electrode of the electronic component;
    An insulating layer that insulates the first wiring pattern and the second wiring pattern;
    The electronic device according to any one of claims 1 to 3, wherein the insulating layer is interposed between the first wiring pattern and the metal layer.
  5. 　前熱伝達部は、前記貫通孔の内周面に形成される内周部と、前記内周部に連なるとともに前記絶縁層の裏面に露出する裏面部と、前記内周部に連なるとともに前記絶縁層の表面に露出する表面部とを含む、請求項１～４の何れか一項に記載の電子機器。 The front heat transfer portion is connected to the inner peripheral portion formed on the inner peripheral surface of the through hole, the back surface portion connected to the inner peripheral portion and exposed to the back surface of the insulating layer, and connected to the inner peripheral portion and the insulating portion. The electronic device according to any one of claims 1 to 4, further comprising a surface portion exposed on a surface of the layer.
  6. 　前記基板は制御基板である、請求項１～５の何れか一項に記載の電子機器。 The electronic device according to any one of claims 1 to 5, wherein the substrate is a control substrate.
PCT/JP2014/082573 2013-12-26 2014-12-09 Electronic device WO2015098502A1 (en)

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KR20210155648A (en) * 2020-06-16 2021-12-23 삼성전자주식회사 Electronic device including a structure for ground connection

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JPH10150283A (en) * 1996-11-19 1998-06-02 Nec Eng Ltd Heat radiation structure of printed-wiring board
JP2008130684A (en) * 2006-11-17 2008-06-05 Denso Corp Electronic circuit apparatus
JP2010263138A (en) * 2009-05-11 2010-11-18 Panasonic Corp Electronic circuit apparatus

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JPH10150283A (en) * 1996-11-19 1998-06-02 Nec Eng Ltd Heat radiation structure of printed-wiring board
JP2008130684A (en) * 2006-11-17 2008-06-05 Denso Corp Electronic circuit apparatus
JP2010263138A (en) * 2009-05-11 2010-11-18 Panasonic Corp Electronic circuit apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108347824A (en) * 2018-02-07 2018-07-31 青岛海信宽带多媒体技术有限公司 A kind of optical module

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