WO2015096744A1 - 一种用于高强度磁场的单芯片参考桥式磁传感器 - Google Patents

一种用于高强度磁场的单芯片参考桥式磁传感器 Download PDF

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Publication number
WO2015096744A1
WO2015096744A1 PCT/CN2014/094838 CN2014094838W WO2015096744A1 WO 2015096744 A1 WO2015096744 A1 WO 2015096744A1 CN 2014094838 W CN2014094838 W CN 2014094838W WO 2015096744 A1 WO2015096744 A1 WO 2015096744A1
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Prior art keywords
magnetic sensor
chip
bridge
string
sensing
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Ceased
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PCT/CN2014/094838
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English (en)
French (fr)
Chinese (zh)
Inventor
迪克詹姆斯·G
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MultiDimension Technology Co Ltd
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MultiDimension Technology Co Ltd
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Priority to US15/108,162 priority Critical patent/US10024930B2/en
Priority to JP2016542947A priority patent/JP6509231B2/ja
Priority to EP14874846.0A priority patent/EP3088908B1/en
Publication of WO2015096744A1 publication Critical patent/WO2015096744A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the present invention relates to the field of magnetic sensor technology, and in particular to a single-chip reference bridge magnetic sensor for use in a high-intensity magnetic field.
  • Magnetic sensors are widely used in modern industrial and electronic products to measure magnetic field strength to measure physical parameters such as current, position, and direction.
  • sensors for measuring magnetic fields and other parameters such as Hall elements, Anisotropic Magneto resistance (AMR) components or Giant Magneto resistance (Giant Magneto resistance,
  • the GMR component is a magnetic sensor of the sensitive component.
  • the Hall magnetic sensor can work in a high-intensity magnetic field, it has disadvantages such as low sensitivity, high power consumption, and poor linearity.
  • the sensitivity of the AMR sensor is higher than that of the Hall sensor, its manufacturing process is complicated, its power consumption is high, and it is not suitable for high-intensity magnetic fields.
  • GMR magnetic sensors have higher sensitivity than Hall magnetic sensors, but their linear range is low and they are not suitable for high-intensity magnetic fields.
  • the TMR (Tunnel Magneto Resistance) magnetic sensor is a new magnetoresistance effect sensor that has been industrially applied in recent years. It uses the tunnel magnetoresistance effect of the magnetic multilayer film material to sense the magnetic field, which is relative to the Hall magnetic sensor and AMR magnetic. Sensors and GMR magnetic sensors offer higher sensitivity, lower power consumption, better linearity and a wider operating range. However, existing TMR magnetic sensors are still not suitable for operation in high-intensity magnetic fields, and the linear range is not wide enough.
  • the present invention provides a single-chip reference bridge magnetic sensor for a high-intensity magnetic field, the sensor comprising:
  • At least one reference arm deposited on the substrate comprising a reference element string having at least one row/column electrically connected by one or at least two identical magnetoresistive sensing elements;
  • At least one sensing arm deposited on the substrate comprising a string of sensing elements having at least one row/column electrically connected by one or at least two identical magnetoresistive sensing elements;
  • At least one attenuator and at least two shielding structures the attenuators being arranged at a staggered interval from the shielding structure, the attenuator and the shielding structure having the same shape, the width and the area of the shielding structure being respectively compared The width and area of the attenuator are large;
  • the reference arm is connected to the sensing arm to form a bridge
  • Each of the reference component strings is correspondingly provided with a shielding structure, and each of the sensing component strings is correspondingly provided with an attenuator, the reference component string is located below or above the shielding structure, and the sensing component string is located at the Below or above the attenuator;
  • the reference element string and the sensing element string have the same number of rows/columns and are arranged in a longitudinal or lateral direction; the gain coefficient of the magnetic field at the sensing element string is greater than the gain coefficient of the magnetic field at the reference element string.
  • the reference element string and the magnetoresistive sensing element constituting the sensing element string are one selected from the group consisting of AMR, GMR, and TMR sensing elements.
  • the magnetoresistive sensing element is one of a GMR spin valve structure, a GMR multilayer film structure, a TMR spin valve structure, and a TMR three-layer film structure.
  • the bridge is a half bridge, a full bridge or a quasi bridge.
  • each of the sensing element strings and the adjacent reference element strings are spaced apart by a distance L.
  • L the number of the attenuators
  • two reference element strings are adjacent in the middle.
  • the spacing between the two is 2L.
  • the number of the attenuators is even, two of the sensing element strings are adjacent in the middle and the spacing between the two is 2L.
  • the number N of the attenuators is not less than the number of rows/columns of the sensing element strings
  • the number M of the shielding structures is not less than the number of rows/columns of the reference component strings, and N ⁇ M, where N and M are positive integers.
  • the substrate comprises an integrated circuit or is connected to other substrates including integrated circuits.
  • the integrated circuit is one of CMOS, BiCMOS, Bipolar, BCDMOS and SOI, and the reference arm and the sensing arm are directly deposited on the integrated circuit of the substrate.
  • the substrate is an ASIC chip
  • the ASIC chip includes any one or at least two of an offset circuit, a gain circuit, a calibration circuit, a temperature compensation circuit, and a logic circuit.
  • the logic circuit is a digital switch circuit or a rotation angle calculation circuit.
  • the shape of the shielding structure and the attenuator are both elongated arrays extending in the transverse/longitudinal direction.
  • the shielding structure and the attenuator have the same constituent materials, all of which are soft ferromagnetic alloys, and the soft ferromagnetic alloy contains one element or at least two elements of Ni, Fe and Co.
  • the input/output connection end of the single-chip reference bridge magnetic sensor is electrically connected to the input/output connection end of the semiconductor package, and the method of the semiconductor package includes pad wire bonding, flip chip, ball grid array package, Wafer-level package or chip-on-board package.
  • the single-chip reference bridge magnetic sensor has a working magnetic field strength of 20 to 500 Gauss.
  • the shielding structure completely covers the reference element string.
  • the present invention has the following beneficial effects: low power consumption, good linearity, wide working range, and high magnetic field.
  • FIG. 1 is a schematic structural view of a single-chip bridge type magnetic sensor in the prior art.
  • FIG. 2 is a schematic structural view of a single-chip reference bridge type magnetic sensor of the present invention.
  • FIG. 4 is a magnetic field distribution diagram of a single-chip reference bridge magnetic sensor of the present invention in an external magnetic field.
  • Figure 5 is a graph showing the relationship between the position of the reference element string and the sensing element string and the corresponding gain coefficient in the present invention.
  • FIG. 6 is a graph showing the relationship between the position of the reference element string and the sensing element string and the corresponding gain coefficient in the prior art.
  • Figure 7 is a response curve of the magnetoresistive sensing element of the TMR and GMR spin valve structures.
  • Fig. 8 is a response curve of a magnetoresistive sensing element of a TMR three-layer film structure and a GMR multilayer film structure.
  • Figure 9 is a response curve of a magnetoresistive sensing element of the AMR Barber-pole (similar to a rotating color column at the door of a barbershop).
  • Fig. 10 is a graph showing the conversion characteristic of the magnetic sensor with or without an attenuator of the TMR spin valve structure of the present invention.
  • Figure 11 is a graph showing the conversion characteristics of a magnetic sensor with or without an attenuator of the TMR three-layer film structure of the present invention.
  • FIG. 1 is a schematic structural view of a single-chip bridge type magnetic sensor disclosed in the prior art patent application 201310203311.3.
  • the sensor comprises a substrate 1, a sensing element string 2, a reference element string 3, a shielding structure 4, an electrical connection conductor 6, and four pads 7-10 for input and output connections, respectively as a power supply terminal Vbias, a ground terminal GND , voltage output terminal V+, V-.
  • the sensing element string 2 and the reference element string 3 are alternately discharged, the sensing element string 2 is located at the gap of the two shielding structures 4, and the reference element string 3 is located below the shielding structure 4.
  • the sensing arm, the reference arm and the pads 7-10 are connected by an electrical connection conductor 6.
  • the sensor has the advantages of high sensitivity, good linearity, small offset, etc., but it is easy to be saturated, and its applicable maximum magnetic field strength is about 100 Gauss, which cannot be used in a higher-intensity magnetic field.
  • FIG. 2 is a schematic structural view of a single-chip reference bridge type magnetic sensor in the present invention. It differs from the sensor shown in FIG. 1 in that the sensor further includes an attenuator 5, which is arranged spaced apart from the shielding structure 4, and the number N of the attenuators 5 is not less than the row of the sensing element string 2. / the number of columns, the number M of the shield structure 4 is not less than the number of rows/columns of the reference element string 3, and N ⁇ M, N and M are both positive integers, and N in FIG. 2 is 5 and M is 6.
  • the attenuator 5 has the same shape as the shielding structure 4, preferably an elongated array extending in the horizontal/longitudinal direction, and the constituent materials thereof are also the same, and are all composed of one element or several elements selected from the group consisting of Ni, Fe and Co.
  • the soft ferromagnetic alloy may also be a non-ferromagnetic material, but is not limited to the above materials.
  • the sensing element string 2 and the reference element string 3 are each formed by at least one row/column electrically connected by one or at least two identical magnetoresistive sensing elements.
  • the magnetoresistive sensing element is an AMR, GMR or TMR sensing element.
  • the sensing element string 2 and the reference element string 3 are alternately discharged, and each sensing element string 2 and the adjacent reference element string 3 are spaced apart by a distance L, but for an odd number of attenuators 5 as shown in FIG.
  • two sensing element strings 2 are adjacent in the middle with a spacing of 2L therebetween.
  • the pitch L is small, preferably 20 to 100 ⁇ m.
  • Each of the sensing element strings 2 is correspondingly provided with an attenuator 5, and each of the reference element strings 3 is correspondingly provided with a shielding structure 4, and the sensing element string 2 and the reference element string 3 are respectively placed above the attenuator 5 and the shielding structure 4. Or below, the situation shown below is shown in Figure 2.
  • the width and area of the shielding structure 4 are larger than the width and area of the attenuator 5, which is large enough to be able to reference elements
  • the string 3 is completely covered, so that the magnetic field at the reference element string 3 can be largely attenuated or even completely shielded, and the magnetic field sensed by the sensing element string 2 is attenuated by the attenuator 5, but The attenuation amplitude is not so large that the gain coefficient Asns of the magnetic field at the inductive element string 2 is greater than the gain coefficient Aref of the magnetic field at the reference element string 3.
  • the sensing arm formed by interconnecting the sensing element string 2 and the reference element string 3 are electrically connected to each other to form a bridge.
  • the input and output terminals of the bridge are respectively the power supply terminal Vbias 7, the ground terminal GND 8, and the voltage. Output V+9, V-10.
  • the components on the sensor are connected by an electrical connection conductor 6.
  • An integrated circuit may also be printed on the substrate 1 or may be connected to another substrate printed with an integrated circuit.
  • the printed integrated circuit may be a CMOS or BiCMOS (bipolar complementary metal oxide semiconductor). Bipolar complementary metal oxide semiconductor), Bipolar, BCDMOS (bipolar-CMOS-DMOS structure) or SOI (Silicon-On-Insulator), reference arm and sensor arm It is deposited directly on the integrated circuit of the substrate 1.
  • the substrate 1 may also be an application specific integrated circuit ASIC chip, which includes any one or several application circuits of an offset circuit, a gain circuit, a calibration circuit, a temperature compensation circuit, and a logic circuit, wherein the logic circuit may also be a digital circuit.
  • the switching circuit or the rotation angle calculating circuit is not limited to the above circuit.
  • pads are used for input/output connection, and semiconductor package methods such as flip chip, ball grid array package, wafer level package, and chip package are also available.
  • the sensor is suitable for use in magnetic fields from 20 to 500 Gauss.
  • FIG. 4 is a magnetic field distribution diagram of the sensing element string 2 and the reference element string 3 in an applied magnetic field.
  • the direction of the applied magnetic field is 11.
  • the magnetoresistive sensing element constituting the inductive element string 2 and the reference element string 3 is a TMR sensing element.
  • the magnetic field at the reference element string 3 is greatly attenuated by the shielding structure, and the attenuation of the magnetic field at the sensing element string 2 is smaller than that of the former.
  • Fig. 5 is a graph showing the relationship between the position of the inductive element string 2 and the reference element string 3 corresponding to Fig. 4 and the gain coefficient at the corresponding position.
  • the gain coefficient Asns of the magnetic field amplitude at the sensing element string 2 and the gain coefficient Aref of the magnetic field amplitude at the reference element string 3 are both between 0 and 1, wherein the gain coefficient Asns is greater than Aref, That is to say, the amplitude of the attenuation of the magnetic field at the reference element string 3 is larger than that of the magnetic field at the sensing element string 2, which is consistent with the conclusion obtained from FIG.
  • FIG. 6 is a graph showing the relationship between the position of the sensing element string 2 and the reference element string 3 of the sensor structure corresponding to FIG. 1 and the gain coefficient at the corresponding position.
  • the number of reference element strings 3 and sensing element strings 2 is the same as in FIG. Comparing the two curves 12 and 13 in Figs. 5 and 6, it can be found that the amplitude of the magnetic field at the sensing element string 2 in the present invention is greatly attenuated, so that even the single-chip reference bridge magnetic sensor of the present invention is placed at a high level.
  • the magnitude of the magnetic field sensed by the sensor is the attenuated magnetic field, and the sensor can still work normally as long as it is within its saturation range.
  • Fig. 7 is a response curve when the magnetoresistive sensing element is a TMR and GMR spin valve structure.
  • the direction of the applied magnetic field 11 is parallel to the magnetization direction 19 of the pinned layer, and the intensity of the applied magnetic field is greater than -Bs+Bo 25, the magnetization direction 18 of the magnetic free layer is parallel to the direction of the applied magnetic field 11, and thus the pinned layer
  • the magnetization direction 19 is parallel, and the magnetoresistance of the TMR element is the smallest, that is, R L 21 .
  • the magnetization direction 18 of the magnetic free layer is parallel to the direction of the applied magnetic field 11, and thus the pinned layer
  • the magnetization direction 19 is anti-parallel, and the magnetoresistance of the TMR element is the largest, that is, R H 22.
  • the intensity of the applied magnetic field 11 is Bo 23
  • the magnetization direction 18 of the magnetic free layer is perpendicular to the magnetization direction 19 of the pinned layer.
  • the magnetic resistance of the TMR element is the intermediate value of R L 21 and R H 22, that is ( R L +R H )/2.
  • the magnetic field between -Bs+Bo 25 and Bs+Bo 26 is the measurement range of a single-chip linear bridge magnetic field sensor. As can be seen from the figure, the curve 20 is linear between -Bs+Bo 25 and Bs+Bo 26.
  • the resistance change rate can be up to 200%, and for the GMR spin valve, the resistance change rate is only 10%.
  • Fig. 8 is a response curve when the magnetoresistive sensing element is a TMR three-layer film structure and a GMR multilayer film structure.
  • the direction of the applied magnetic field 11 is parallel to the magnetization direction 19 of the pinning layer, and the intensity of the applied magnetic field is greater than -Bs31 or Bs32
  • the magnetization direction 18 of the magnetic free layer is parallel to the direction of the applied magnetic field 11, and thus the pinned layer
  • the magnetization direction 19 is parallel, and the magnetic resistance of the MTJ element is the smallest, that is, R L 28 .
  • the magnetization direction 18 of the magnetic free layer is anti-parallel to the magnetization direction 19 of the pinned layer, and the magnetoresistance of the MTJ element is the largest, that is, R H 27.
  • the magnetic field between -Bs 31 and Bs 32 is the measuring range of the sensor.
  • the curves 29, 30 are linear between -Bs 31 and Bs 32, and the resistance change rate of the magnetoresistive element can be up to 200%.
  • Figure 9 is a response curve of the magnetoresistive sensing element in the AMR Barber-pole configuration. As can be seen from the figure, the resistance change rate of the magnetoresistive element is approximately 1%.
  • Fig. 10 is a conversion characteristic curve when the magnetoresistive sensing element is a single-chip reference bridge sensor of the TMR spin valve structure with or without an attenuator.
  • Curve 15 shows the absence of an attenuator
  • curve 16 shows the use of an attenuator
  • the horizontal axis is the magnitude of the applied magnetic field
  • the vertical axis is the ratio of the sensor output voltage to the supply voltage. Comparing the two curves, it can be seen that the linear range of the magnetic field corresponding to the curve 15 is about 35 oersted, and the linear range of the magnetic field corresponding to the curve 16 is about 150 oersted.
  • the sensor The linear working range is significantly wider.
  • Fig. 11 is a conversion characteristic curve when the magnetoresistive sensing element is a single-chip reference bridge sensor of the TMR three-layer film structure with or without an attenuator.
  • Curve 33 shows the absence of an attenuator
  • curve 34 shows the use of an attenuator
  • the horizontal axis is the magnitude of the applied magnetic field
  • the vertical axis is the ratio of the sensor output voltage to the supply voltage. Comparing these two curves shows that after using the attenuator, the sensor's working range is significantly wider.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
PCT/CN2014/094838 2013-12-24 2014-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器 Ceased WO2015096744A1 (zh)

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US15/108,162 US10024930B2 (en) 2013-12-24 2014-12-24 Single chip referenced bridge magnetic sensor for high-intensity magnetic field
JP2016542947A JP6509231B2 (ja) 2013-12-24 2014-12-24 強磁場用のシングルチップ基準ブリッジ磁気センサ
EP14874846.0A EP3088908B1 (en) 2013-12-24 2014-12-24 Single chip reference bridge type magnetic sensor for high-intensity magnetic field

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CN201310719255.9A CN103645449B (zh) 2013-12-24 2013-12-24 一种用于高强度磁场的单芯片参考桥式磁传感器
CN201310719255.9 2013-12-24

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* Cited by examiner, † Cited by third party
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US10024930B2 (en) 2013-12-24 2018-07-17 MultiDimension Technology Co., Ltd. Single chip referenced bridge magnetic sensor for high-intensity magnetic field

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217010A (en) * 1991-05-28 1993-06-08 The Johns Hopkins University Ecg amplifier and cardiac pacemaker for use during magnetic resonance imaging
CN101587174A (zh) * 2008-05-14 2009-11-25 新科实业有限公司 磁传感器
CN102323554A (zh) * 2011-05-17 2012-01-18 杭州电子科技大学 集成线圈偏置的巨磁电阻磁敏传感器
JP2013053903A (ja) * 2011-09-02 2013-03-21 Alps Green Devices Co Ltd 電流センサ
CN103267955A (zh) * 2013-05-28 2013-08-28 江苏多维科技有限公司 单芯片桥式磁场传感器
CN203337808U (zh) * 2013-05-28 2013-12-11 江苏多维科技有限公司 单芯片桥式磁场传感器
CN103592608A (zh) * 2013-10-21 2014-02-19 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN103645449A (zh) * 2013-12-24 2014-03-19 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器
CN203587786U (zh) * 2013-10-21 2014-05-07 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN203658561U (zh) * 2013-12-24 2014-06-18 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887944A (en) * 1973-06-29 1975-06-03 Ibm Method for eliminating part of magnetic crosstalk in magnetoresistive sensors
JP2663460B2 (ja) * 1987-10-09 1997-10-15 株式会社デンソー 磁気方位センサ
US6185078B1 (en) * 1998-08-21 2001-02-06 International Business Machines Corporation Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap
US6771472B1 (en) * 2001-12-07 2004-08-03 Seagate Technology Llc Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
JP4977378B2 (ja) * 2006-02-23 2012-07-18 山梨日本電気株式会社 磁気センサ、回転検出装置及び位置検出装置
CN101421635B (zh) * 2006-04-13 2012-05-30 旭化成电子材料元件株式会社 磁传感器及其制造方法
US7639005B2 (en) * 2007-06-15 2009-12-29 Advanced Microsensors, Inc. Giant magnetoresistive resistor and sensor apparatus and method
US7795862B2 (en) * 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
WO2010143718A1 (ja) * 2009-06-12 2010-12-16 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
CN202230192U (zh) * 2011-03-03 2012-05-23 江苏多维科技有限公司 推挽桥式磁电阻传感器
WO2012120940A1 (ja) * 2011-03-07 2012-09-13 アルプス電気株式会社 電流センサ
CN102621504B (zh) * 2011-04-21 2013-09-04 江苏多维科技有限公司 单片参考全桥磁场传感器
CN102565727B (zh) * 2012-02-20 2016-01-20 江苏多维科技有限公司 用于测量磁场的磁电阻传感器
JP2013210335A (ja) * 2012-03-30 2013-10-10 Alps Electric Co Ltd 磁気センサ
CN103630855B (zh) * 2013-12-24 2016-04-13 江苏多维科技有限公司 一种高灵敏度推挽桥式磁传感器

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217010A (en) * 1991-05-28 1993-06-08 The Johns Hopkins University Ecg amplifier and cardiac pacemaker for use during magnetic resonance imaging
CN101587174A (zh) * 2008-05-14 2009-11-25 新科实业有限公司 磁传感器
CN102323554A (zh) * 2011-05-17 2012-01-18 杭州电子科技大学 集成线圈偏置的巨磁电阻磁敏传感器
JP2013053903A (ja) * 2011-09-02 2013-03-21 Alps Green Devices Co Ltd 電流センサ
CN103267955A (zh) * 2013-05-28 2013-08-28 江苏多维科技有限公司 单芯片桥式磁场传感器
CN203337808U (zh) * 2013-05-28 2013-12-11 江苏多维科技有限公司 单芯片桥式磁场传感器
CN103592608A (zh) * 2013-10-21 2014-02-19 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN203587786U (zh) * 2013-10-21 2014-05-07 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
CN103645449A (zh) * 2013-12-24 2014-03-19 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器
CN203658561U (zh) * 2013-12-24 2014-06-18 江苏多维科技有限公司 一种用于高强度磁场的单芯片参考桥式磁传感器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3088908A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10024930B2 (en) 2013-12-24 2018-07-17 MultiDimension Technology Co., Ltd. Single chip referenced bridge magnetic sensor for high-intensity magnetic field

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EP3088908B1 (en) 2021-10-20
EP3088908A4 (en) 2017-09-20
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