WO2015096662A1 - 一种聚合物波导光栅的制作方法 - Google Patents

一种聚合物波导光栅的制作方法 Download PDF

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WO2015096662A1
WO2015096662A1 PCT/CN2014/094323 CN2014094323W WO2015096662A1 WO 2015096662 A1 WO2015096662 A1 WO 2015096662A1 CN 2014094323 W CN2014094323 W CN 2014094323W WO 2015096662 A1 WO2015096662 A1 WO 2015096662A1
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grating
polymer waveguide
manufactured
waveguide
polymer
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PCT/CN2014/094323
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English (en)
French (fr)
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王攀
郝沁汾
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华为技术有限公司
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/124Geodesic lenses or integrated gratings

Definitions

  • the invention relates to the technical field of manufacturing polymer waveguide gratings, in particular to a method for manufacturing polymer waveguide gratings.
  • optical waveguides as the carrier for transmitting optical signals, are their basic components.
  • optical waveguides made of inorganic materials such as silicon and silicon dioxide, etc.
  • optical waveguides made of organic polymer materials have easy doping and functionalization, controllable refractive index, easy matching with optical fibers, and simple preparation process.
  • the advantages of good flexibility and low cost have become another effective choice for optical waveguide materials in integrated optical devices, especially in the field of flexible optical chips and optical interconnection applications, which have more prominent advantages. Therefore, organic polymer optical waveguides have broad application prospects.
  • the grating in the waveguide can realize the functions of reflection, filtering and coupling of guided light, and plays a very important role in various optical devices such as filters, wavelength division multiplexers/demultiplexers, lasers and optical sensors.
  • An indispensable functional unit in an optical chip or optical interconnection Therefore, the development of a simple and universal method for preparing gratings in polymer waveguides is of great significance to the development of flexible optical chips and optical interconnection applications.
  • the embodiments of the present invention provide a simple and versatile method for manufacturing a polymer waveguide grating.
  • a method for manufacturing a polymer waveguide grating which includes:
  • the electron beam exposure system is used to expose the polymer waveguide to form a polymer waveguide grating.
  • the grating period, the number of grating periods and the refractive index at the grating of the polymer waveguide grating to be manufactured are determined according to the type and performance parameters of the polymer waveguide grating to be manufactured Changes include:
  • the refractive index change amount and the grating period number at the grating in the polymer waveguide grating to be manufactured are determined.
  • the reflection wavelength and grating order of the polymer waveguide grating to be manufactured are the same as those of the polymer waveguide grating to be manufactured
  • the relationship between cycles is:
  • the reflectivity of the polymer waveguide grating to be manufactured is related to the number of grating periods and the grating period of the polymer waveguide grating to be manufactured.
  • the relationship between the refractive index of this variable is:
  • R is the reflectivity of the polymer waveguide grating to be manufactured
  • n is the refractive index of the polymer waveguide
  • ⁇ n max is the refractive index change at the grating in the polymer waveguide grating to be manufactured
  • N is the grating period number
  • the parameters of the electron beam exposure system include: acceleration voltage and exposure time.
  • the electron beam exposure dose ranges from 100 ⁇ C/cm2-500mC/cm2, including the endpoint value; the acceleration voltage ranges from 1kV -300kV, including the endpoint value.
  • the types of the polymer waveguide grating to be manufactured include: Bragg gratings, long-period gratings, and chirped gratings.
  • the polymer waveguide is a rectangular waveguide, a ridge waveguide or a circular waveguide.
  • the width of the rectangular waveguide or ridge waveguide is in the range of 200nm-50 ⁇ m , Including the endpoint value, the height range of the rectangular waveguide or ridge waveguide is 200nm-50 ⁇ m, including the endpoint value; when the polymer waveguide is a circular waveguide, the diameter range of the circular waveguide is 200nm-50 ⁇ m, including Endpoint value.
  • the material of the polymer waveguide is polymethylmethacrylate, polystyrene, polycarbonate, or polycarbonate. Imide.
  • the technical solution provided by the embodiment of the present invention includes: firstly, determining the grating period, the number of grating periods and the refractive index at the grating of the polymer waveguide grating to be manufactured according to the type and performance parameters of the polymer waveguide grating to be manufactured The amount of change; secondly, the exposure dose of the electron beam is determined according to the relationship between the amount of change in the refractive index of the polymer material of the polymer waveguide grating to be made and the exposure dose of the electron beam; again, according to the exposure dose of the electron beam , Set the parameters of the electron beam exposure system; then, put the substrate with the polymer waveguide formed on the surface into the electron beam exposure system, and according to the grating period and the number of grating periods of the polymer waveguide grating to be manufactured, The exposure path of the electron beam exposure system is set; finally, after the exposure path is set, the polymer waveguide is exposed by the electron beam exposure system to form a polymer waveguide grating.
  • the manufacturing method provided by the embodiment of the present invention uses an electron beam exposure system to expose the polymer waveguide, thereby forming a grating by changing the refractive index of the internal material of the polymer waveguide. Therefore, the embodiment of the present invention
  • the provided manufacturing method will neither form a periodic undulating structure on the surface of the polymer waveguide, nor will it have special restrictions on the material of the polymer waveguide, and when manufacturing waveguide gratings with different structural parameters, only the The parameters of the electron beam exposure system can be set without replacing the corresponding grating template or phase mask or re-adjusting the optical path system, thereby greatly improving the simplicity and versatility of the polymer waveguide grating manufacturing method.
  • FIG. 1 is a flowchart of a method for manufacturing a polymer waveguide grating provided by an embodiment of the present invention
  • FIG. 2 is a schematic diagram of an exposure route in a method for manufacturing a polymer waveguide grating provided by an embodiment of the present invention
  • FIG. 3 is a schematic diagram of an exposure route in a method for manufacturing a polymer waveguide grating provided by another embodiment of the present invention.
  • One is to use a soft etching method to press a template with a grating structure on the surface of the polymer waveguide, and then use ultraviolet curing or heating to transfer the periodic structure on the template to the polymer waveguide, so that the polymerization A periodic structure, namely a grating, is formed on the object waveguide.
  • this soft etching method is used, polymer waveguide gratings with the same structural parameter requirements can be prepared in a large area, which is time-consuming and low-cost.
  • the grating made on the polymer waveguide by this method will form a periodic undulating structure on the surface of the polymer waveguide, so that when the light is transmitted in the polymer waveguide, it will be scattered at the grating and increase the total amount of light.
  • the transmission loss of the polymer waveguide which in turn increases the insertion loss of the corresponding device.
  • the entire chip is usually heated or exposed to ultraviolet rays, because of its large range of action. To It will affect the performance of the devices around the waveguide.
  • the various parameters of the grating on the template are fixed values, the various parameters of the grating made by this method are also a single fixed value. If you want to obtain waveguide gratings with different structural parameters, you need to redesign and The corresponding grating template results in poor versatility of this method.
  • the second is to adopt the method of ultraviolet exposure, using double-beam interferometry or phase mask, so that the ultraviolet laser forms periodic interference fringes with light and dark phases on the side of the polymer waveguide.
  • the light-sensitive polymer waveguide material occurs at the bright fringe.
  • the photochemical reaction increases the refractive index inside the corresponding waveguide, while the polymer waveguide material at the dark stripe does not undergo a photochemical reaction, and the refractive index inside the corresponding waveguide does not change, thereby forming a waveguide grating.
  • This method not only solves the problem of increased transmission loss caused by the periodic undulating structure of the waveguide surface in the first method, but also not only can control the period of the waveguide grating by controlling the period of the interference fringe, but also by controlling the exposure intensity. Controlling the refractive index change of the waveguide, with good controllability.
  • this method requires the material of the waveguide itself to have photosensitive properties, that is, its refractive index will change under ultraviolet light irradiation, which makes the choice of waveguide material smaller, resulting in poor versatility of this method. Moreover, the resolution of the waveguide grating fabricated by this method is limited by the diffraction limit of ultraviolet light, which makes it difficult to fabricate short-period waveguide gratings.
  • this method needs to adjust the parameters of the corresponding optical path or replace the corresponding phase mask when making waveguide gratings with different structural parameters, which is more cumbersome and further reduces the versatility of the method.
  • an embodiment of the present invention provides a method for manufacturing a polymer waveguide grating, including:
  • the electron beam exposure system is used to expose the polymer waveguide to form a polymer waveguide grating.
  • the manufacturing method provided by the embodiment of the present invention uses an electron beam exposure system to expose the polymer waveguide, thereby forming a grating by changing the refractive index of the material inside the polymer waveguide. Therefore, the manufacturing method provided by the embodiment of the present invention No periodic undulating structure is formed on the surface of the polymer waveguide, nor is there any special restriction on the material of the polymer waveguide, and when making waveguide gratings with different structural parameters, only the electron beam exposure system needs to be changed. It is not necessary to replace the corresponding grating template or phase mask, or readjust the optical path system, thereby greatly improving the simplicity and versatility of the polymer waveguide grating manufacturing method.
  • the embodiment of the present invention provides a method for manufacturing a polymer waveguide grating, as shown in FIG. 1, including:
  • Step S101 Determine the grating period, the number of grating periods, and the refractive index change amount at the grating of the polymer waveguide grating to be manufactured according to the type and performance parameters of the polymer waveguide grating to be manufactured.
  • the polymer waveguide grating may be a Bragg grating, and in another embodiment of the present invention, the polymer waveguide grating may be a long-period To In another embodiment of the present invention, the polymer waveguide grating may be a chirped grating, which is not limited in the present invention. In other embodiments of the present invention, the polymer waveguide grating is also It can also be other types of grating structures, depending on the production requirements.
  • the performance parameters of the polymer waveguide grating include: reflection wavelength and reflectivity, etc., which are not limited by the present invention.
  • theoretical calculation methods can be used to obtain the grating period, the number of grating periods and the grating position of the polymer waveguide grating to be manufactured according to the type and performance parameters of the polymer waveguide grating to be manufactured.
  • the amount of refractive index change can be used to obtain the grating period, the number of grating periods and the grating position of the polymer waveguide grating to be manufactured according to the type and performance parameters of the polymer waveguide grating to be manufactured.
  • step S1 includes:
  • Step S1011 Determine the grating period of the polymer waveguide grating to be manufactured according to the reflection wavelength and the grating order of the polymer waveguide grating to be manufactured. Specifically, using the relationship between the reflection wavelength of the polymer waveguide grating to be manufactured, the grating order and the grating period of the polymer waveguide grating to be manufactured:
  • is the grating period of the polymer waveguide grating to be manufactured
  • l is the grating order of the polymer waveguide grating to be manufactured
  • is the reflection wavelength of the polymer waveguide grating to be manufactured
  • n eff is the polymer The effective refractive index of the waveguide.
  • Step S1012 According to the reflectivity of the polymer waveguide grating to be manufactured, the refractive index change amount and the grating period number at the grating in the polymer waveguide grating to be manufactured are determined. Specifically, the relationship between the reflectivity of the polymer waveguide grating to be manufactured and the number of grating periods of the polymer waveguide grating to be manufactured and the refractive index at the grating are used as the following variables:
  • the product of the refractive index change at the grating in the polymer waveguide grating to be manufactured and the number of grating periods of the polymer waveguide grating to be manufactured is a fixed value, and The greater the refractive index change at the grating in the polymer waveguide grating to be manufactured, the smaller the grating period number of the polymer waveguide grating to be manufactured, and the smaller the grating period number of the polymer waveguide grating to be manufactured, the The smaller the size of the polymer waveguide grating to be made.
  • a simulation method can also be used to obtain the grating period, the number of grating periods, and the grating position of the polymer waveguide grating to be manufactured according to the type and performance parameters of the polymer waveguide grating to be manufactured.
  • the amount of refractive index change may be a beam propagation method, but the present invention does not limit this, and it depends on the situation.
  • Step S102 According to the relationship between the refractive index change of the polymer material of the polymer waveguide grating to be manufactured and the electron beam exposure dose, determine the electron beam required at the position where the grating is to be formed in the polymer waveguide grating to be manufactured Exposure dose.
  • the inventor’s research found that the use of electron beam exposure of polymer materials can cause changes in the molecular structure of the polymer, thereby increasing the refractive index of the polymer material in the electron beam exposure area, and the greater the exposure dose of the electron beam, the greater the exposure dose of the polymer material.
  • the relationship between the refractive index change of the polymer material of the polymer waveguide grating to be made and the electron beam exposure dose can be obtained by the following method: First, according to the polymer waveguide to be made The polymer material of the grating is exposed to the same polymer film material with different electron beam exposure doses; secondly, the refractive index change of the exposed area of the polymer film material before and after exposure is measured by a refractive index measuring instrument (such as an ellipsometer) Volume, established to change in refractive index To The one-to-one correspondence between the amount of exposure and the exposure dose of the electron beam; then, based on the one-to-one correspondence between the amount of refractive index change and the exposure dose of the electron beam, the electron beam exposure dose is used as the independent variable, and the refractive index The amount of change is a function of the dependent variable.
  • a refractive index measuring instrument such as an ellipsometer
  • the functional relationship can be used according to the required refractive index change at the grating in the polymer waveguide grating to be manufactured , To obtain the electron beam exposure dose required at the position where the grating is to be formed in the polymer waveguide grating to be manufactured.
  • Step S103 After the electron beam exposure dose is obtained, the parameters of the electron beam exposure system are set according to the electron beam exposure dose.
  • the required electron beam exposure dose can be obtained by setting the electron beam current and the electron beam exposure time of the electron beam exposure system.
  • the exposure dose of the electron beam can be controlled by fixing the current of the electron beam and controlling the exposure time of the electron beam.
  • the electron beam current of the electron beam exposure system is related to the acceleration voltage of the electron beam in the electron beam exposure system, in a specific implementation of the present invention, the parameters of the electron beam exposure system include the acceleration voltage and Exposure time, so that the required electron beam exposure dose can be obtained by setting the electron beam acceleration voltage and the exposure time of the electron beam exposure system.
  • the electron beam exposure dose is preferably in the range of 100 ⁇ C/cm2-500 mC/cm2, including the end value; the acceleration voltage of the electron beam is in the range of 1 kV-300 kV, including the end value.
  • the present invention does not limit this.
  • the exposure dose of the electron beam and the acceleration voltage of the electron beam may also have other values, depending on the situation.
  • the exposure time of the electron beam exposure system can also be fixed, and the exposure dose of the electron beam can be controlled by controlling the electron beam current, which is not limited in the present invention. , It depends on the situation.
  • the change in the refractive index of the polymer caused by ultraviolet exposure is generally between 10-4 and 10-2, and the change in the refractive index of the polymer caused by the electron beam exposure can reach 0.1, which is visible, and it is caused by the electron beam exposure.
  • the change in the refractive index of the polymer material is significantly greater than the change in the refractive index of the polymer material caused by methods such as ultraviolet exposure. Therefore, using the manufacturing method provided by the embodiment of the present invention can significantly reduce the number of grating periods of the polymer waveguide grating manufactured, thereby significantly reducing the size of the polymer waveguide grating, so as to improve the integration degree of the corresponding optical device. .
  • Step S104 Put the substrate with the polymer waveguide formed on the surface into the electron beam exposure system, and set the electron beam exposure system according to the grating period and the number of grating periods of the polymer waveguide grating to be manufactured Exposure path.
  • the substrate with the polymer waveguide formed on the surface into the electron beam exposure system After setting the parameters of the electron beam exposure system, put the substrate with the polymer waveguide formed on the surface into the electron beam exposure system, and according to the position of the polymer waveguide and the grating to be formed in the polymer waveguide The starting position at, the position of the substrate is positioned. After positioning, the exposure path of the electron beam exposure system is set according to the grating period and the number of grating periods of the polymer waveguide grating to be manufactured.
  • Step S105 After the exposure path is set, use the electron beam exposure system to expose the polymer waveguide to form a polymer waveguide grating.
  • the electron beam exposure system is turned on, and the electron beam 3 generated by the electron beam exposure system is used to apply the electron beam 3 on the substrate 1 along the exposure path ( Figure 2) by exposure, the refractive index of the exposed area of the polymer waveguide (corresponding to the area 4 shown in FIG. 2) can be modulated, thereby forming the polymer waveguide grating 4.
  • the electron beam exposure system may be an electron beam lithography machine or a scanning electron microscope, but the present invention is not limited to this, as long as it is a device capable of generating electron beams.
  • the polymer waveguide may be a rectangular waveguide, a ridge waveguide or a circular waveguide. In other embodiments of the present invention, the polymer waveguide may also be a rectangular waveguide. It may have other shapes, and the present invention does not limit this, and it depends on the situation.
  • the cross-sectional dimension of the polymer waveguide is 200 nm-50 ⁇ m, including the endpoint value.
  • the cross-sectional dimension of the polymer waveguide includes the width (that is, the direction perpendicular to the paper in FIG. 2) and the height (that is, the direction perpendicular to the paper in FIG. 2) of the polymer waveguide.
  • the vertical direction in Figure 2) that is, the width of the rectangular waveguide or ridge waveguide is 200nm-50 ⁇ m, including the endpoint value, and the height of the rectangular waveguide or ridge waveguide is 200nm-50 ⁇ m, including the endpoint value; when When the polymer waveguide is a circular waveguide, the cross-sectional dimension of the polymer waveguide is the diameter of the circle, that is, the diameter of the circular waveguide ranges from 200 nm to 50 ⁇ m, including the endpoint value.
  • the material of the polymer waveguide includes: polymethylmethacrylate, polystyrene, polycarbonate and polyimide, but in other embodiments of the present invention, The material of the polymer waveguide can also be other polymer materials, which is not limited in the present invention.
  • the manufacturing method provided by the embodiments of the present invention can conveniently control the exposure dose of the electron beam exposure system.
  • the exposure path precisely control the position of the exposure area in the polymer waveguide and the refractive index change of the exposure area, so as to precisely control the processing parameters such as the grating period and the number of grating periods of the polymer waveguide grating to be manufactured, so that the embodiment of the present invention
  • the provided manufacturing method can precisely control various processing parameters of polymer waveguide gratings, and manufacture various complex polymer waveguide gratings.
  • the manufacturing method provided by the embodiment of the present invention uses the electron beam generated by the electron beam exposure system to directly in the polymer waveguide Exposure on the upper surface to form a grating, so that the surrounding devices will not be affected during the process of making the polymer waveguide grating.
  • the electron beam exposure system has a very high resolution. Therefore, the manufacturing method provided by the embodiment of the present invention can also manufacture various fine grating structures.
  • the manufacturing method provided by the embodiment of the present invention does not form a periodic undulating structure on the surface of the polymer waveguide, so that it does not cause light to be scattered at the grating when it is transmitted in the polymer waveguide. Further increase the transmission loss of the polymer waveguide, and will not require the polymerization To
  • the material of the object waveguide has photosensitive characteristics, so that the manufacturing method provided by the embodiment of the present invention reduces the transmission loss of the polymer waveguide compared with the prior art one, and improves the transmission loss compared with the prior art two.
  • the versatility of the polymer waveguide manufacturing method is described.
  • the electron beam exposure system has high-precision controllability for electron beams.
  • the following takes the polymer waveguide grating as a Bragg grating and the polymer material is polymethyl methacrylate as an example to describe in detail the manufacturing method of the polymer waveguide grating provided by the embodiment of the present invention, but the manufacturing method provided by the present invention The method is also applicable to grating types such as long-period gratings or chirped gratings.
  • the material of the polymer waveguide can also be polymer materials such as polymethylmethacrylate, polystyrene, polycarbonate, or polyimide. The invention does not limit this.
  • is the grating period of the polymer waveguide Bragg grating
  • l is the grating order of the polymer waveguide Bragg grating, which is artificially set according to production requirements
  • is the reflection wavelength of the polymer waveguide Bragg grating
  • n eff is the effective refractive index of the polymer waveguide.
  • Step 203 Use the formula Calculate the number of grating periods of the polymer waveguide Bragg grating and the refractive index change at the grating.
  • R is the reflectivity of the polymer waveguide Bragg grating
  • n is the refractive index of the polymer waveguide
  • ⁇ n max is the refractive index change at the grating in the polymer waveguide Bragg grating
  • N is the number of grating periods
  • Step S204 According to the relationship between the refractive index change of the polymer material polymethyl methacrylate of the polymer waveguide Bragg grating and the electron beam exposure dose, determine where the grating is to be formed in the polymer waveguide grating to be manufactured The required electron beam exposure dose.
  • step S204 includes: using different electron beam exposure doses to expose the same polymethyl methacrylate film material; secondly, using a refractive index measuring instrument (such as an ellipsometer) to measure The refractive index change amount of the exposed area of the polymethyl methacrylate film material before and after exposure is established as a one-to-one correspondence between the refractive index change amount and the electron beam exposure dose; then, the refractive index change amount is determined by the electron beam exposure dose. Based on the one-to-one correspondence between the exposure doses, the polymethyl methacrylate material has the electron beam exposure dose as the independent variable and the refractive index change as a function of the strain.
  • a refractive index measuring instrument such as an ellipsometer
  • the required value at the grating in the polymethyl methacrylate waveguide grating to be manufactured can be obtained.
  • the change in refractive index of, using this function to obtain the to-be-made polymethyl propylene To The electron beam exposure dose required for the methyl enoate waveguide grating where the grating is to be formed.
  • Step 205 After obtaining the electron beam exposure dose, set the parameters of the electron beam exposure system according to the electron beam exposure dose.
  • the exposure dose of the electron beam is in the range of 100 ⁇ C/cm2-500 mC/cm2, including the end value; the acceleration voltage of the electron beam is in the range of 1 kV-300 kV, including the end value.
  • Step S206 Put the substrate with the polymer waveguide formed on the surface into the electron beam exposure system, and set the exposure of the electron beam exposure system according to the grating period and the number of grating periods of the polymer waveguide Bragg grating path.
  • the substrate with the polymer waveguide formed on the surface into the electron beam exposure system After setting the parameters of the electron beam exposure system, put the substrate with the polymer waveguide formed on the surface into the electron beam exposure system, and according to the position of the polymer waveguide and the grating to be formed in the polymer waveguide The starting position at, the position of the substrate is positioned. After positioning, the exposure path of the electron beam exposure system is set according to the grating period and the number of grating periods of the polymer waveguide grating to be manufactured.
  • the method for fabricating a polymer waveguide grating uses an electron beam exposure system to expose the polymer waveguide, so that the grating is formed by changing the refractive index of the inner material of the polymer waveguide. Therefore,
  • the manufacturing method provided by the embodiment of the present invention does not form a periodic undulating structure on the surface of the polymer waveguide, nor does it require the material of the polymer waveguide to have photosensitive characteristics, and when manufacturing waveguide gratings with different structural parameters, Only need to change the setting parameters of the electron beam exposure system, without replacing the corresponding grating template or phase mask, or re-adjusting the optical path system, thereby greatly improving the simplicity of the polymer waveguide grating manufacturing method And versatility.

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Abstract

一种聚合物波导光栅的制作方法,包括:(S101)根据待制作聚合物波导光栅(4)的类型和性能参数,确定待制作聚合物波导光栅(4)的光栅周期、光栅周期数及其光栅处的折射率改变量;(S102)根据待制作聚合物波导光栅(4)的聚合物材料的折射率改变量与电子束曝光剂量之间的关系,确定待形成光栅处所需的电子束曝光剂量;(S103)根据电子束(3)的曝光剂量,设定电子束曝光系统的参数;(S104)将表面形成有聚合物波导(2)的基片放入电子束曝光系统中,并根据光栅周期和光栅周期数,设定电子束曝光系统的曝光路径;(S105)利用电子束曝光系统对聚合物波导(2)进行曝光,形成聚合物波导光栅(4)。

Description

一种聚合物波导光栅的制作方法
本申请要求于2013年12月24日提交中国专利局、申请号为201310724408.9、发明名称为“一种聚合物波导光栅的制作方法”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。
技术领域
本发明涉及制造聚合物波导光栅技术领域,尤其涉及一种聚合物波导光栅的制作方法。
背景技术
随着高速信息化技术的发展,集成光学器件正逐步取代传统的微光学器件,成为未来光通信、光计算和光传感器等领域的核心结构单元。在这些集成光学器件中,光波导作为传输光信号的载体,是其基本的组成部分。
与无机材料(如硅和二氧化硅等)制备的光波导相比,有机聚合物材料制备的光波导由于具有易于掺杂和功能化、折射率可控、易与光纤匹配、制备过程简单、柔韧性好和成本低等优点,成为集成光学器件中光波导材料的另一种有效选择,尤其是在柔性光芯片和光互连应用领域,具有更加凸显的优势。因此,有机聚合物光波导有着广泛的应用前景。
波导中的光栅可以实现对导波光的反射、滤波和耦合等功能,在滤波器、波分复用/解复用器、激光器和光学传感器等各类光学器件中起着非常重要的作用,是光芯片或光互连中必不可少的功能单元。因此,研制一种简便、通用的在聚合物波导中制备光栅的方法,对柔性光芯片和光互连应用领域的发展具有十分重要的意义。
发明内容
为解决上述技术问题,本发明实施例提供了一种简便、通用的聚合物波导光栅的制作方法。
为解决上述问题,本发明实施例提供了如下技术方案:
第一方面,提出了一种聚合物波导光栅的制作方法,包括:
根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量;
根据所述待制作聚合物波导光栅的聚合物材料的折射率改变量与电子束曝光剂量之间的关系,确定所述待制作聚合物波导光栅中待形成光栅处所需的电子束曝光剂量;
根据所述电子束的曝光剂量,设定电子束曝光系统的参数;
将表面形成有聚合物波导的基片放入所述电子束曝光系统中,并根据所述待制作聚合物波导光栅的光栅周期及光栅周期数,设定所述电子束曝光系统的曝光路径;
曝光路径设置好以后,利用所述电子束曝光系统对所述聚合物波导进行曝光,形成聚合物波导光栅。
在第一方面的第一种可能的实现方式中,根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量包括:
根据待制作聚合物波导光栅的反射波长和光栅阶数,确定所述待制作聚合物波导光栅的光栅周期;
根据所述待制作聚合物波导光栅的反射率,确定所述待制作聚合物波导光栅中光栅处的折射率改变量和光栅周期数。
结合所述第一方面的第一种可能实现方式,在第二种可能的实现方式中,所述待制作聚合物波导光栅的反射波长、光栅阶数与所述待制作聚合物波导光栅的光栅周期之间的关系为:
Λ=lλ/2neff
其中,Λ为所述待制作聚合物波导光栅的光栅周期;l为所述待制作聚合物波导光栅的光栅阶数;λ为所述待制作聚合物波导光栅的反射波长,neff为聚合物波导的有效折射率。
结合所述第一方面的第一种可能实现方式,在第三种可能的实现方式中,所述待制作聚合物波导光栅的反射率与所述待制作聚合物波导光栅的光栅周期数、光栅处的折射率该变量之间的关系为:
Figure PCTCN2014094323-appb-000001
其中,R为所述待制作聚合物波导光栅的反射率;n为聚合物波导的折射率,△nmax为所述待制作聚合物波导光栅中光栅处的折射率变化量;N为光栅周期数;
Figure PCTCN2014094323-appb-000002
为所述待制作聚合物波导光栅传输的光强。
结合第一方面或上述第一方面的任一可能的实现方式,在第四种可能实现方式中,所述电子束曝光系统的参数包括:加速电压和曝光时间。
结合第一方面的第四种可能实现方式,在第五种可能实现方式中,所述电子束曝光剂量的范围为100μC/cm2-500mC/cm2,包括端点值;所述加速电压的范围为1kV-300kV,包括端点值。
在第一方面的第六种可能实现方式中,所述待制作聚合物波导光栅的类型包括:布拉格光栅、长周期光栅和啁啾光栅。
在第一方面的第七种可能实现方式中,所述聚合物波导为矩形波导、脊型波导或圆形波导。
结合第一方面的第七种可能实现方式,在第八种可能实现方式中,所述聚合物波导为矩形波导或脊型波导时,所述矩形波导或脊型波导的宽度范围为200nm–50μm,包括端点值,所述矩形波导或脊型波导的高度范围为200nm–50μm,包括端点值;所述聚合物波导为圆形波导时,所述圆形波导的直径范围为200nm–50μm,包括端点值。
结合第一方面或上述第一方面的任一可能的实现方式,在第九种可能实现方式中,所述聚合物波导的材料为聚甲基丙烯酸甲酯、聚苯乙烯、聚碳酸酯或聚酰亚胺。
与现有技术相比,上述技术方案具有以下优点:
本发明实施例所提供的技术方案,包括:首先,根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量;其次,根据所述待制作聚合物波导光栅的聚合物材料的折射率改变量与电子束曝光剂量之间的关系,确定电子束的曝光剂量;再次,根据所述电子束的曝光剂量,设定电子束曝光系统的参数;然后,将表面形成有聚合物波导的基片放入所述电子束曝光系统中,并根据所述待制作聚合物波导光栅的光栅周期及光栅周期数,设定所述电子束曝光系统的曝光路径;最后,曝光路径设置好以后,利用所述电子束曝光系统对所述聚合物波导进行曝光,形成聚合物波导光栅。
由此可见,本发明实施例所提供的制作方法,是采用电子束曝光系统对聚合物波导进行曝光,从而通过改变所述聚合物波导内部材料的折射率形成光栅,因此,本发明实施例所提供的制作方法既不会在聚合物波导表面形成周期性的起伏结构,也不会对所述聚合物波导的材料有特殊限制,而且在制作不同结构参数的波导光栅时,只需改变所述电子束曝光系统的设置参数即可,而无需替换与之相应的光栅模板或相位掩膜版,或者重新调节光路系统,从而大大提高了所述聚合物波导光栅制作方法的简便性和通用性。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例所提供的聚合物波导光栅制作方法的流程图;
图2为本发明一个实施例所提供的聚合物波导光栅制作方法中,曝光路线示意图;
图3为本发明另一个实施例所提供的聚合物波导光栅制作方法中,曝光路线示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明实施方式作进一步地详细描述。
以下所述是本发明实施例的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明实施例原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明实施例的保护范围。
正如背景技术部分所述,研制一种简便、通用的在聚合物波导中制备光栅的方法,对柔性光芯片和光互连应用领域的发展具有十分重要的意义。
发明人研究发现,现有技术中在聚合物波导中制备光栅的方法主要有以下两种:
一种是采用软刻蚀的方法,利用表面带光栅结构的模板压在聚合物波导上,然后采用紫外固化或加热等方式,使模板上的周期性结构转移到聚合物波导上,从而在聚合物波导上形成周期性的结构,即光栅。虽然采用这种软刻蚀方法,可以大面积的制备具有相同结构参数要求的聚合物波导光栅,耗时短且成本低。
但是,利用这种方法在聚合物波导上制作的光栅,会在聚合物波导表面形成周期性的起伏结构,从而使得光在所述聚合物波导内传输时,会在光栅处发生散射,增加所述聚合物波导的传输损耗,进而增加其相应器件的插入损耗。而且,在利用紫外线或加热的方式,使聚合物波导上的周期性结构定型时,通常是对整个芯片一起加热或进行紫外线曝光,因其作用范围较大, 会对波导周围器件的性能造成影响。
此外,由于模板上光栅的各参数值为固定值,因此,采用这种方法制作的光栅的各项参数也为单一的固定值,如果想要获得不同结构参数的波导光栅,则需要重新设计与之相应的光栅模板,导致这种方法通用性较差。
二是采用紫外曝光的方法,利用双光束干涉法或者相位掩膜版,使紫外激光在聚合物波导侧面形成明暗相间的周期性干涉条纹,其中,明条纹处具有光敏特性的聚合物波导材料发生光化学反应,使得其相应的波导内部的折射率增加,而暗条纹处的聚合物波导材料不发生光化学反应,其相应的波导内部的折射率不发生变化,从而形成波导光栅。这种方法不但解决了方法一中由于波导表面具有周期性起伏结构而引起的传输损耗增加的问题,而且,不仅可以通过控制干涉条纹的周期来控制波导光栅的周期,还可以通过控制曝光强度来控制波导的折射率变化量,可控性好。
但是,这种方法要求波导本身的材料具有光敏特性,即在紫外光照射下,其折射率会发生变化,使得波导材料的选择范围较小,导致这种方法的通用性也较差。而且,这种方法制作的波导光栅的分辨率受紫外光的衍射极限的限制,在制作短周期的波导光栅时具有一定的难度。
此外,这种方法在制作不同结构参数的波导光栅时,需要调节对应光路的参数或者替换相应的相位掩膜版,较为繁琐,进一步降低了该方法的通用性。
基于上述研究的基础上,本发明实施例提供了聚合物波导光栅的制作方法,包括:
根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量;
根据所述待制作聚合物波导光栅的聚合物材料的折射率改变量与电子束曝光剂量之间的关系,确定所述待制作聚合物波导光栅中待形成光栅处所需的电子束曝光剂量;
根据所述电子束的曝光剂量,设定电子束曝光系统的参数;
将表面形成有聚合物波导的基片放入所述电子束曝光系统中,并根据所述待制作聚合物波导光栅的光栅周期及光栅周期数,设定所述电子束曝光系统的曝光路径;
曝光路径设置好以后,利用所述电子束曝光系统对所述聚合物波导进行曝光,形成聚合物波导光栅。
本发明实施例所提供的制作方法,是采用电子束曝光系统对聚合物波导进行曝光,从而通过改变所述聚合物波导内部材料的折射率形成光栅,因此,本发明实施例所提供的制作方法既不会在聚合物波导表面形成周期性的起伏结构,也不会对所述聚合物波导的材料有特殊限制,而且在制作不同结构参数的波导光栅时,只需改变所述电子束曝光系统的设置参数即可,而无需替换与之相应的光栅模板或相位掩膜版,或者重新调节光路系统,从而大大提高所述聚合物波导光栅制作方法的简便性和通用性。
为使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。
在以下描述中阐述了具体细节以便于充分理解本发明。但是本发明能够以多种不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广。因此本发明不受下面公开的具体实施的限制。
本发明实施例提供了一种聚合物波导光栅的制作方法,如图1所示,包括:
步骤S101:根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量。
需要说明的是,在本发明的一个实施例中,所述聚合物波导光栅可以为布拉格光栅,在本发明的另一个实施例中,所述聚合物波导光栅可以为长周 期光栅,在本发明的又一个实施例中,所述聚合物波导光栅可以为啁啾光栅,本发明对此并不做限定,在本发明的其他实施例中,所述聚合物波导光栅还还可以为其他类型的光栅结构,具体视制作需求而定。而所述聚合物波导光栅的性能参数包括:反射波长和反射率等,本发明对此也不做限定。
在本发明的一个实施例中,可以利用理论计算的方法,根据待制作聚合物波导光栅的类型和性能参数,获得所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量。
在该实施例的一个具体实施例中,步骤S1包括:
步骤S1011:根据待制作聚合物波导光栅的反射波长和光栅阶数,确定所述待制作聚合物波导光栅的光栅周期。具体的,利用所述待制作聚合物波导光栅的反射波长、光栅阶数与所述待制作聚合物波导光栅的光栅周期之间的关系:
Λ=lλ/2neff
计算所述待制作聚合物波导光栅的光栅周期。其中,Λ为所述待制作聚合物波导光栅的光栅周期;l为所述待制作聚合物波导光栅的光栅阶数;λ为所述待制作聚合物波导光栅的反射波长,neff为聚合物波导的有效折射率。
步骤S1012:根据所述待制作聚合物波导光栅的反射率,确定所述待制作聚合物波导光栅中光栅处的折射率改变量和光栅周期数。具体的,利用所述待制作聚合物波导光栅的反射率与所述待制作聚合物波导光栅的光栅周期数、光栅处的折射率该变量之间的关系:
Figure PCTCN2014094323-appb-000003
计算所述待制作聚合物波导光栅的光栅周期数及其光栅处的折射率该变量。其中,R为所述待制作聚合物波导光栅的反射率;n为聚合物波导的折射率,△nmax为所述待制作聚合物波导光栅中光栅处的折射率变化量;N为光栅周 期数;
Figure PCTCN2014094323-appb-000004
为所述待制作聚合物波导光栅传输的光强。
由上式可知,在相同反射率的条件下,所述待制作聚合物波导光栅中光栅处的折射率变化量与所述待制作聚合物波导光栅的光栅周期数的乘积为定值,所述待制作聚合物波导光栅中光栅处的折射率改变量越大,所述待制作聚合物波导光栅的光栅周期数越小,而所述待制作聚合物波导光栅的光栅周期数越小,所述待制作聚合物波导光栅的尺寸越小。
在本发明的另一个实施例中,也可以利用模拟方法,根据待制作聚合物波导光栅的类型和性能参数,获得所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量。在本实施例的一个具体实施例中,所述模拟方法可以为光束传播法,但本发明对此并不做限定,具体视情况而定。
步骤S102:根据所述待制作聚合物波导光栅的聚合物材料的折射率改变量与电子束曝光剂量之间的关系,确定所述待制作聚合物波导光栅中待形成光栅处所需的电子束曝光剂量。
发明人研究发现,利用电子束曝光聚合物材料,可以引起聚合物分子结构的改变,从而增加电子束曝光区域聚合物材料的折射率,且所述电子束的曝光剂量越大,所述聚合物曝光区域的折射率增加量越大。因此,可以根据所述待制作聚合物波导光栅的聚合物材料的折射率改变量和电子束曝光剂量之间的关系,通过控制电子束的曝光剂量来控制所述待制作聚合物波导光栅中光栅处的折射率改变量。
在本发明的一个具体实施例中,所述待制作聚合物波导光栅的聚合物材料的折射率改变量和电子束曝光剂量之间的关系可以通过以下方法获得:首先,根据待制作聚合物波导光栅的聚合物材料,利用不同的电子束曝光剂量曝光同一聚合物薄膜材料;其次,利用折射率测量仪器(如椭偏仪)测得所述聚合物薄膜材料曝光区域在曝光前后的折射率改变量,建立以折射率改变 量和电子束曝光剂量之间的一一对应关系;然后,以折射率改变量和电子束曝光剂量之间的一一对应关系为基础,获得以所述电子束曝光剂量为自变量,折射率改变量为应变量的函数关系。
获得以所述电子束曝光剂量为自变量,折射率改变量为应变量的函数关系后,即可根据所述待制作聚合物波导光栅中光栅处所需的折射率改变量,利用该函数关系,获得所述待制作聚合物波导光栅中待形成光栅处所需的电子束曝光剂量。
步骤S103:获得所述电子束曝光剂量后,根据所述电子束曝光剂量,设定电子束曝光系统的参数。
由于所述电子束曝光剂量为电子束束流与电子束曝光时间的乘积,因此,可以通过设置电子束曝光系统的电子束束流和电子束曝光时间来获得所需的电子束曝光剂量。
在本发明的一个优选实施例中,可以通过固定电子束束流,控制所述电子束的曝光时间来控制电子束的曝光剂量。由于所述电子束曝光系统的电子束束流与所述电子束曝光系统中电子束的加速电压有关,因此,在本发明的一个具体实施中,所述电子束曝光系统的参数包括加速电压和曝光时间,从而可以通过设置所述电子束曝光系统的电子束加速电压和曝光时间来获得所需的电子束曝光剂量。
在本发明的一个具体实施例中,所述电子束曝光剂量的范围优选为100μC/cm2-500mC/cm2,包括端点值;所述电子束的加速电压的范围为1kV-300kV,包括端点值。但本发明对此并不做限定,在本发明的其他实施例中,所述电子束的曝光剂量与所述电子束的加速电压也可以为其他值,具体视情况而定。
在本发明的另一个实施例中,还可以通过固定所述电子束曝光系统的曝光时间,通过控制所述电子束束流来控制所述电子束的曝光剂量,本发明对此并不做限定,具体视情况而定。
一般情况下,紫外曝光方式引起的聚合物折射率改变量一般在10-4-10-2之间,而电子束曝光引起的聚合物折射率改变量可达0.1,可见,电子束曝光引起的聚合物材料折射率改变量明显大于紫外曝光等方法引起的聚合物材料的折射率改变量。因此,利用本发明实施例所提供的制作方法,可以明显减少所制作的聚合物波导光栅的光栅周期数,从而显著降低所述聚合物波导光栅的尺寸,以便于提高其相应光学器件的集成度。
步骤S104:将表面形成有聚合物波导的基片放入所述电子束曝光系统中,并根据所述待制作聚合物波导光栅的光栅周期及光栅周期数,设定所述电子束曝光系统的曝光路径。
设定好所述电子束曝光系统的参数后,将表面形成有聚合物波导的基片放入电子束曝光系统中,并根据所述聚合物波导的位置及所述聚合物波导中待形成光栅处的起始位置,对所述基片的位置进行定位。定位好以后,根据所述待制作聚合物波导光栅的光栅周期和光栅周期数,设定所述电子束曝光系统的曝光路径。
步骤S105:曝光路径设置好以后,利用所述电子束曝光系统对所述聚合物波导进行曝光,形成聚合物波导光栅。
如图2所示,曝光路径设置好以后,打开所述电子束曝光系统,利用所述电子束曝光系统产生的电子束3对所述基片1上的聚合物波导2沿着曝光路径(图2中的黑色箭头方向)进行曝光,即可使所述聚合物波导曝光区域(对应图2中所示的区域4)的折射率发生调制,从而形成聚合物波导光栅4。优选的,所述电子束曝光系统可以为电子束光刻机或者扫描电子显微镜,但本发明对此并不做限定,只要为能产生电子束的装置即可。
需要说明的是,在本发明的一个实施例中,所述聚合物波导可以为矩形波导,也可以为脊型波导或圆形波导,在本发明的其他实施例中,所述聚合物波导还可以为其他形状,本发明对此并不做限定,具体视情况而定。优选的,所述聚合物波导的横截面尺寸为200nm–50μm,包括端点值。
具体的,当所述聚合物波导为矩形波导或脊型波导时,所述聚合物波导的横截面尺寸包括所述聚合物波导的宽(即图2中垂直于纸面方向)和高(即图2中竖直方向),即所述矩形波导或脊型波导的宽度范围为200nm–50μm,包括端点值,所述矩形波导或脊型波导的高度范围为200nm–50μm,包括端点值;当所述聚合物波导为圆形波导时,所述聚合物波导的横截面尺寸为所述圆形的直径尺寸,即所述圆形波导的直径范围为200nm–50μm,包括端点值。
而且,在本发明的一个实施例中,所述聚合物波导的材料包括:聚甲基丙烯酸甲酯、聚苯乙烯、聚碳酸酯和聚酰亚胺,但在本发明的其他实施例中,所述聚合物波导的材料还可以为其他聚合物材料,本发明对此也不做限定。
由于电子束曝光系统对电子束焦点的大小、聚焦位置和曝光路径均具有良好的控制性,因此,本发明实施例所提供的制作方法,可以方便的通过控制所述电子束曝光系统的曝光剂量和曝光路径,精确控制所述聚合物波导中曝光区域的位置及曝光区域的折射率改变量,从而精确控制待制作聚合物波导光栅的光栅周期、光栅周期数等加工参数,使得本发明实施例所提供的制作方法,可以精确控制聚合物波导光栅的各种加工参数,制作各种复杂的聚合物波导光栅。
又由于电子束的聚焦很小,一般在100nm以下,是一种局域性的加工方式,而本发明实施例所提供的制作方法,是利用电子束曝光系统产生的电子束直接在聚合物波导上进行曝光形成光栅,从而在制作聚合物波导光栅的过程中,不会对其周围的器件造成影响。而且,所述电子束曝光系统具有很高的分辨率,因此,本发明实施例所提供的制作方法还可以制作各种精细的光栅结构。
此外,本发明实施例所提供的制作方法,既不会在所述聚合物波导表面形成周期性的起伏结构,从而不会导致光在所述聚合物波导内传输时,在光栅处发生散射,进而增加所述聚合物波导的传输损耗,也不会要求所述聚合 物波导的材料具有光敏特性,从而使得本发明实施例所提供的制作方法,相较于现有技术一,降低了所述聚合物波导的传输损耗,相较于现有技术二,提高了所述聚合物波导制作方法的通用性。
而且,本发明实施例所提供的制作方法,在制作不同结构参数的聚合物波导光栅时,只需更改所述电子束曝光系统的设置参数即可,而不需要更改与之相匹配的光栅模板或相位掩膜版,也省略了现有技术二中重新调节光路系统的繁琐步骤,从而使得本发明实施例所提供的制作方法不仅简便,而且通用性强。
除此之外,在高集成密度的光芯片上,通常存在弯曲波导结构以提高空间的利用率,从而提高器件的集成度,故通常需要用到在弯曲聚合物波导上制作光栅结构。利用现有技术中的软刻蚀方法或紫外曝光方式较难实现弯曲聚合物波导光栅的制备,而本发明实施例所提供的方法中,由于电子束曝光系统对电子束具有高精度的可控性,因此,可以通过设置电子束的曝光路径,如图3所示,使其沿着弯曲聚合物波导中需要制作光栅结构的方向曝光所述聚合物波导(即图3中黑色箭头方向),从而在弯曲聚合物波导上形成光栅结构。
下面以所述聚合物波导光栅为布拉格光栅,其聚合物材料为聚甲基丙烯酸甲酯为例对本发明实施例所提供的聚合物波导光栅的制作方法进行详细描述,但本发明所提供的制作方法同样适用于长周期光栅或啁啾光栅等光栅类型,所述聚合物波导的材料也可以为聚甲基丙烯酸甲酯、聚苯乙烯、聚碳酸酯或聚酰亚胺等聚合物材料,本发明对此并不做限定。
本发明实施例所提供的聚合物波导光栅的制作方法包括:
步骤201:在基片表面形成聚合物波导。在本发明的一个实施例中,步骤S201包括:首先,在SO I(silicon-on-insulator,绝缘衬底上的硅)基片上旋涂一层厚度约为2μm的聚甲基丙烯酸甲酯薄膜,然后,利用光刻或电子 束曝光等方法,在所述基片上制备一宽度和高度均为2μm的矩形聚甲基丙烯酸甲酯波导。
步骤202:利用公式Λ=lλ/2neff,计算所述聚甲基丙烯酸甲酯波导布拉格光栅的光栅周期。其中,Λ为所述聚合物波导布拉格光栅的光栅周期;l为所述聚合物波导布拉格光栅的光栅阶数,根据制作需求人为设定;λ为所述聚合物波导布拉格光栅的反射波长,neff为聚合物波导的有效折射率。
步骤203:利用公式
Figure PCTCN2014094323-appb-000005
计算所述聚合物波导布拉格光栅的光栅周期数及其光栅处的折射率改变量。其中,R为所述聚合物波导布拉格光栅的反射率;n为聚合物波导的折射率,△nmax为所述聚合物波导布拉格光栅中光栅处的折射率变化量;N为光栅周期数;
Figure PCTCN2014094323-appb-000006
为所述聚合物波导布拉格光栅传输的光强。
步骤S204:根据所述聚合物波导布拉格光栅的聚合物材料聚甲基丙烯酸甲酯的折射率改变量与电子束曝光剂量之间的关系,确定所述待制作聚合物波导光栅中待形成光栅处所需的电子束曝光剂量。
具体的,在本发明的一个具体实施例中,步骤S204包括:利用不同的电子束曝光剂量曝光同一聚甲基丙烯酸甲酯薄膜材料;其次,利用折射率测量仪器(如椭偏仪)测得所述聚甲基丙烯酸甲酯薄膜材料曝光区域在曝光前后的折射率改变量,建立以折射率改变量和电子束曝光剂量之间的一一对应关系;然后,以折射率改变量和电子束曝光剂量之间的一一对应关系为基础,获得聚甲基丙烯酸甲酯材料的以电子束曝光剂量为自变量,折射率改变量为应变量的函数关系。
获得聚甲基丙烯酸甲酯材料的以电子束曝光剂量为自变量,折射率改变量为应变量的函数关系后,即可根据所述待制作聚甲基丙烯酸甲酯波导光栅中光栅处所需的折射率改变量,利用该函数关系,获得所述待制作聚甲基丙 烯酸甲酯波导光栅中待形成光栅处所需的电子束曝光剂量。
步骤205:获得所述电子束曝光剂量后,根据所述电子束曝光剂量,设定电子束曝光系统的参数。
优选的,所述电子束曝光剂量的范围为100μC/cm2-500mC/cm2,包括端点值;所述电子束的加速电压的范围为1kV-300kV,包括端点值。
步骤S206:将表面形成有聚合物波导的基片放入所述电子束曝光系统中,并根据所述聚合物波导布拉格光栅的光栅周期及光栅周期数,设定所述电子束曝光系统的曝光路径。
设定好所述电子束曝光系统的参数后,将表面形成有聚合物波导的基片放入电子束曝光系统中,并根据所述聚合物波导的位置及所述聚合物波导中待形成光栅处的起始位置,对所述基片的位置进行定位。定位好以后,根据所述待制作聚合物波导光栅的光栅周期和光栅周期数,设定所述电子束曝光系统的曝光路径。
步骤207:曝光路径设置好以后,利用所述电子束曝光系统对所述聚合物波导进行曝光,形成聚合物波导布拉格光栅。
综上所述,本发明实施例所提供的聚合物波导光栅的制作方法,采用电子束曝光系统对聚合物波导进行曝光,从而通过改变所述聚合物波导内部材料的折射率形成光栅,因此,本发明实施例所提供的制作方法既不会在聚合物波导表面形成周期性的起伏结构,也不会要求所述聚合物波导的材料具有光敏特性,而且在制作不同结构参数的波导光栅时,只需改变所述电子束曝光系统的设置参数即可,而无需替换与之相应的光栅模板或相位掩膜版,或者重新调节光路系统,从而大大提高所述聚合物波导光栅制作方法的简便性和通用性。
本说明书中各个部分采用递进的方式描述,每个部分重点说明的都是与其他部分的不同之处,各个部分之间相同相似部分互相参见即可。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (10)

  1. 一种聚合物波导光栅的制作方法,其特征在于,包括:
    根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量;
    根据所述待制作聚合物波导光栅的聚合物材料的折射率改变量与电子束曝光剂量之间的关系,确定所述待制作聚合物波导光栅中待形成光栅处所需的电子束曝光剂量;
    根据所述电子束的曝光剂量,设定电子束曝光系统的参数;
    将表面形成有聚合物波导的基片放入所述电子束曝光系统中,并根据所述待制作聚合物波导光栅的光栅周期及光栅周期数,设定所述电子束曝光系统的曝光路径;
    曝光路径设置好以后,利用所述电子束曝光系统对所述聚合物波导进行曝光,形成聚合物波导光栅。
  2. 根据权利要求1所述的制作方法,其特征在于,根据待制作聚合物波导光栅的类型和性能参数,确定所述待制作聚合物波导光栅的光栅周期、光栅周期数及其光栅处的折射率改变量包括:
    根据待制作聚合物波导光栅的反射波长和光栅阶数,确定所述待制作聚合物波导光栅的光栅周期;
    根据所述待制作聚合物波导光栅的反射率,确定所述待制作聚合物波导光栅中光栅处的折射率改变量和光栅周期数。
  3. 根据权利要求2所述的制作方法,其特征在于,所述待制作聚合物波导光栅的反射波长、光栅阶数与所述待制作聚合物波导光栅的光栅周期之间的关系为:
    Λ=lλ/2neff
    其中,Λ为所述待制作聚合物波导光栅的光栅周期;l为所述待制作聚合物波导光栅的光栅阶数;λ为所述待制作聚合物波导光栅的反射波长,neff为聚合物 波导的有效折射率。
  4. 根据权利要求2所述的制作方法,其特征在于,所述待制作聚合物波导光栅的反射率与所述待制作聚合物波导光栅的光栅周期数、光栅处的折射率该变量之间的关系为:
    Figure PCTCN2014094323-appb-100001
    其中,R为所述待制作聚合物波导光栅的反射率;n为聚合物波导的折射率,△nmax为所述待制作聚合物波导光栅中光栅处的折射率变化量;N为光栅周期数;
    Figure PCTCN2014094323-appb-100002
    为所述待制作聚合物波导光栅传输的光强。
  5. 根据权利要求1-4任一项所述的制作方法,其特征在于,所述电子束曝光系统的参数包括:加速电压和曝光时间。
  6. 根据权利要求5所述的制作方法,其特征在于,所述电子束曝光剂量的范围为100μC/cm2-500mC/cm2,包括端点值;所述加速电压的范围为1kV-300kV,包括端点值。
  7. 根据权利要求1所述的制作方法,其特征在于,所述待制作聚合物波导光栅的类型包括:布拉格光栅、长周期光栅和啁啾光栅。
  8. 根据权利要求1所述的制作方法,其特征在于,所述聚合物波导为矩形波导、脊型波导或圆形波导。
  9. 根据权利要求8所述的制作方法,其特征在于,所述聚合物波导为矩形波导或脊型波导时,所述矩形波导或脊型波导的宽度范围为200nm–50μm,包括端点值,所述矩形波导或脊型波导的高度范围为200nm–50μm,包括端点值;所述聚合物波导为圆形波导时,所述圆形波导的直径范围为200nm–50μm,包括端点值。
  10. 根据权利要求1-9任一项所述的制作方法,其特征在于,所述聚合物波导的材料为聚甲基丙烯酸甲酯、聚苯乙烯、聚碳酸酯或聚酰亚胺。
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CN112526661B (zh) * 2020-12-08 2022-06-21 北京信息科技大学 一种基于电子束曝光机的变栅距光栅传感器制备方法
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