WO2015085639A1 - 一种量子点透镜及其制造方法 - Google Patents

一种量子点透镜及其制造方法 Download PDF

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Publication number
WO2015085639A1
WO2015085639A1 PCT/CN2013/091093 CN2013091093W WO2015085639A1 WO 2015085639 A1 WO2015085639 A1 WO 2015085639A1 CN 2013091093 W CN2013091093 W CN 2013091093W WO 2015085639 A1 WO2015085639 A1 WO 2015085639A1
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Prior art keywords
quantum dot
lens
light exit
exit surface
lens body
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PCT/CN2013/091093
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English (en)
French (fr)
Inventor
丘永元
康志聪
张简圣哲
苏赞加
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/235,787 priority Critical patent/US9335023B2/en
Publication of WO2015085639A1 publication Critical patent/WO2015085639A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

Definitions

  • the present invention relates to the field of backlight illumination technology, and more particularly to a quantum dot lens for use with a single LED and a method of fabricating the same.
  • Quantum dot Dot also known as nanocrystals, is a nanoparticle composed of II-VI or III-V elements. Since the band gap of a quantum dot is inversely proportional to the size, quantum dots having different emission spectra can be prepared by controlling the size of the quantum dots. In addition, the half-width of the quantum dot luminescence spectrum (about 50-60 nm) is narrower than that of the current LED (green half-width of about 80 nm), and the red phosphor (half-peak width is about 100 nm) is narrower. Using the above two features, when used in TV, it can be well matched with light resistance (color Filter, CF), achieve high penetration while ensuring high color gamut (NTSC).
  • color Filter, CF color Filter
  • quantum dot materials mainly use CdSe as the core and CdS as the shell.
  • Quantum dot materials are subject to high temperature and oxygen, which can cause their failure. Therefore, the application of quantum dots in commercial fields needs to protect quantum dot materials.
  • Quantum dot materials need to use more quantum dot materials, and the limitation of the illumination angle of the quantum strips leads to the use of quantum dots in the backlight of the display field, which requires a large number of quantum strips, which is not economical.
  • the object of the present invention is to provide a quantum dot lens that can be used with a single LED in order to meet the demand defect when the backlight is used in the prior art. To solve the above problem.
  • a quantum dot lens comprising a lens body shaped as a rotating body, the lens body having a light incident surface and a light exit surface, a light incident surface and a light exit surface They are all located on the central axis of the lens body; the lens body is filled with quantum dot material.
  • the light exit surface is a hemispherical surface or a semi-ellipsoidal surface.
  • the lens body is further provided with a conical diffusion hole for increasing the illumination angle at the center of the light exit surface, and the diameter of the diffusion hole is gradually enlarged from the inside of the lens main body to the outside.
  • the light exit surface is a double sphere butterfly surface.
  • the light exit surface is a flat surface
  • the lens body is further provided with a conical diffusion hole at the center of the light exit surface for increasing the illumination angle.
  • the diameter of the expansion hole is from the inside of the lens main body. The outside is gradually expanding.
  • the lens body comprises a package tube made of glass, and a cavity corresponding to the shape of the rotating body is formed in the package tube, and the quantum dot material is filled in the inner cavity.
  • the lens body comprises a filling cavity at the bottom of the rotating body and a silica gel layer enclosing the filling cavity, and the filling cavity is filled with the quantum dot material.
  • a method of manufacturing a quantum dot lens comprising the steps of:
  • the mold is controlled to mold the silicone into a lens body;
  • the lens body is a rotating body, and the light incident surface and the light exit surface are formed on the lens body, and the center of the light incident surface and the light exit surface are located on the central axis of the lens body; Forming a filling cavity at the bottom;
  • a quantum dot material is injected into the filling cavity.
  • the light exit surface is a hemispherical surface or a semi-ellipsoidal surface.
  • the lens body is further provided with a conical diffusion hole for increasing the illumination angle at the center of the light exit surface, and the diameter of the diffusion hole is gradually enlarged from the inside of the lens main body to the outside.
  • the light exit surface is a double sphere butterfly surface.
  • the light exit surface is a flat surface, and a conical diffusion hole is formed in the center of the light exit surface, and the diameter of the diffusion hole is gradually enlarged from the inside of the lens main body to the outside.
  • a method of manufacturing a quantum dot lens comprising the steps of:
  • the quantum dot material is wrapped into a lens body using a silica gel, the lens body is a rotating body, and the lens body is formed with a light incident surface and a light exit surface, and the light incident surface and the light are emitted.
  • the center of the face is located on the central axis of the lens body; the quantum dot material is located at the bottom of the lens body.
  • the light exit surface is a hemispherical surface or a semi-ellipsoidal surface.
  • the lens body is further provided with a conical diffusion hole for increasing the illumination angle at the center of the light exit surface, and the diameter of the diffusion hole is gradually enlarged from the inside of the lens main body to the outside.
  • the light exit surface is a double sphere butterfly surface.
  • the light exit surface is a flat surface, and a conical diffusion hole is formed in the center of the light exit surface, and the diameter of the diffusion hole is gradually enlarged from the inside of the lens main body to the outside.
  • the quantum dot lens and the method for fabricating the same according to the present invention can be used in combination with a single LED, and a quantum dot lens is formed by controlling quantum dots to amplify the light-emitting angle, thereby reducing the use of the quantum dot material and reducing the manufacturing cost. Since the light excited from the quantum dot material can directly satisfy the requirement of a large illumination angle, it is not necessary to cooperate with the secondary lens for light distribution, thereby improving the backlight taste in the backlight use, and realizing a high color in the direct backlight. Domain requirements.
  • 1 is a schematic view showing an assembly structure of a conventional quantum strip and an LED
  • FIG. 2 is a schematic view showing a quantum dot lens and an LED assembled together according to a first embodiment of the present invention
  • Figure 3 is a schematic view of the quantum dot lens shown in Figure 2;
  • FIG. 4 is a schematic view of a quantum dot lens according to a second embodiment of the present invention.
  • Figure 5 is a schematic view of a quantum dot lens according to a third embodiment of the present invention.
  • FIG. 6 is a schematic view of a quantum dot lens according to a fourth embodiment of the present invention.
  • Figure 7 is a schematic view of a quantum dot lens according to a fifth embodiment of the present invention.
  • Figure 8 is a schematic view of a quantum dot lens according to a sixth embodiment of the present invention.
  • Figure 9 is a schematic view of a quantum dot lens according to a seventh embodiment of the present invention.
  • Figure 10 is a schematic view of a quantum dot lens according to an eighth embodiment of the present invention.
  • FIG. 11 is a flow chart of a first embodiment of a method of fabricating a quantum dot lens of the present invention.
  • Figure 12 is a flow chart showing a second embodiment of the method of fabricating a quantum dot lens of the present invention.
  • Figure 1 shows a side view of the display structure of the existing LED with quantum dots.
  • the mixing cup 4 is extended upward (mixing Cup)
  • a cavity for carrying the blue LED 2 and the wafer 3 is left in the middle of the mixing cup 4, and a quantum bar 5 having a rectangular parallelepiped structure is placed on the top of the cavity.
  • the blue LED is excited 2 generates blue light
  • the blue light-excited quantum strip 5 emits light having a wavelength corresponding to the size of the quantum material in the quantum strip 5.
  • the LED in Figure 1 has a small illumination angle and can only reach a range of about 120°. If used as a backlight, it requires a large amount of LEDs in Figure 1 to achieve a sufficient illumination area. It will consume more quantum dot materials and cost more.
  • the present invention provides a quantum dot lens for use with a single LED as shown in FIG. 2 to increase the angle of illumination of the outgoing light, thereby reducing the number of LEDs, thereby achieving a reduction in manufacturing cost.
  • the existing quantum strip 5 is replaced with a quantum dot lens 6.
  • the lens body of the quantum dot lens 6 is a rotating body, the bottom surface of the rotating body is a plane light incident surface, and the light exit surface is a hemispherical or semi-ellipsoidal diffusing exit surface, and the central axis of the rotating body passes through the light incident surface and the light exit surface.
  • the quantum dot lens 6 is filled with a quantum dot material.
  • the structure of the quantum dot lens 6 is as shown in FIG.
  • the outer layer of the quantum dot lens 6 is a thin glass tube 61 for encapsulating the quantum dot material, and the inside is a filling cavity 62 conforming to the shape of the quantum dot lens 6, and the filling cavity 62 is used for filling the quantum dot material.
  • the filled quantum dot material is a semiconductor material having a refractive index of about 2.45, and the quantum dot material is first dissolved in methanol having a refractive index of 1.328 or hexane having a refractive index of 1.375 to form a liquid form, and then The mixed liquid is injected into the filling chamber 62 to form a quantum dot lens 6. Due to the difference in refractive index, when the light of the LED passes through the flat incident surface and the spherical or ellipsoidal diffused exit surface in turn, the illumination angle can be increased, which is especially suitable for the direct backlight (backlight). Used in unit, BLU), it can ensure the brightness distribution of BLU is uniform, and reduce the number of LEDs and quantum dot lenses.
  • BLU direct backlight
  • the present invention provides a second embodiment of the quantum dot lens as shown in FIG.
  • This embodiment is based on a modification of the first embodiment.
  • a tapered diffusion hole 63 is opened to the inside, and the expansion hole 63 is gradually enlarged from the inside of the lens body to the outside.
  • the function of the diffusion hole 63 is to reflect the light in the middle of the diffusion surface to the edge position of the diffusion surface, thereby expanding the illumination angle to make the overall light-emitting effect more uniform.
  • the diffusing surface of the glass tube 61 is a double-ball butterfly shape, and the light incident on the middle of the double-ball butterfly surface is mostly refracted to the periphery of the double-ball butterfly surface, thereby making the overall light-emitting effect. More even.
  • the diffusing surfaces are all arched, but the present invention is not limited thereto.
  • the diffusion surface of the glass tube 61 is a flat surface, and a conical diffusion hole is formed in the center of the plane. The light illuminating the diffusion hole is reflected to the edge position of the diffusion surface, so that the overall light-emitting effect is more even.
  • the specific size of the quantum dot lens in each of the above embodiments is flexibly adjusted according to the specific size of the LED, as long as the quantum dot lens can be embedded in the top of the mixing cup 4 and stabilized;
  • the specific shape of the surface such as the radius of curvature of the hemispherical surface, the depth of the tapered hole, the size of the apex angle of the tapered hole, etc., are adaptively selected according to the angle at which the specific diffusion is required.
  • the quantum strips filled into the interior are formed into different shapes by changing the shape of the glass tube 61; in other embodiments of the present invention, it is also possible to pass the quantum strips in the existing rectangular parallelepiped shape.
  • the processing was carried out to obtain the same effect of diffusing light as the above four examples.
  • the quantum dot material used is filled into a rectangular cavity-shaped filling cavity 62 to form a quantum strip, and then a silica gel layer is wrapped on the outside of the quantum strip. 64 (silicone), forming a lens body.
  • the bottom surface of the silica gel layer 64 is a flat light incident surface, and the light exit surface is a hemispherical or semi-ellipsoidal diffusing exit surface.
  • the quantum strip is located at the bottom of the quantum dot lens.
  • the quantum dot lens of the present embodiment when the quantum dot lens is mounted on the mixing cup 4, the light emitted from the LED first passes through the flat incident surface at the bottom of the silica gel layer 64, and then enters into the quantum strip, and the quantum strip receives the light of the LED. Excitation, generating excitation light corresponding to the size of the quantum material, and then expanding through the hemispherical or semi-ellipsoidal diffusion exit surface at the top of the silica gel layer 64.
  • FIG. 8 is a sixth embodiment of the present invention.
  • This embodiment is a modification of the fifth embodiment.
  • a tapered opening is formed in the center of the top of the hemispherical or semi-ellipsoidal exit surface.
  • FIG. 9 shows a seventh embodiment of the present invention.
  • the light exit surface of the top portion of the silicone layer 64 is a double-ball butterfly surface, and the light incident surface of the bottom surface is a smooth plane.
  • the quantum strip inside the silica gel layer 64 is located on the side close to the bottom surface. When the emitted light of the LED is incident from the bottom surface, it will pass through the quantum strip, and the quantum strip is excited to generate light which matches the size of the quantum dot material, due to the refractive index of the silica gel.
  • Fig. 10 shows an eighth embodiment of the present invention.
  • the top exit surface of the silicone layer 64 is a plane having a conical reflection hole, and the diffusion hole is gradually enlarged from the inside of the lens main body to the outside.
  • a glass tube 61 is employed as the outer casing, and the four embodiments are prepared in a similar manner: first, a mold is used for shaping, and a glass casing having a filling chamber 62 is prepared.
  • the shape of the filling cavity 62 matches the outer shape of the glass envelope; the quantum dot material is then dissolved in a solution, for example, dissolved in methanol having a refractive index of 1.328 or hexane having a refractive index of 1.375 to form a liquid form, and then The mixed liquid is injected into the cavity to form a quantum dot lens.
  • the bottom surface of the prepared glass casing is a smooth plane, and the light exit surface corresponds to the fourth embodiment of the first embodiment, which is a hemispherical or semi-ellipsoidal shape, a hemispherical or semi-ellipsoid with a tapered hole. Spherical, double-ball butterfly and flat with tapered holes.
  • the thickness of the glass is controlled to be equal, or the thickness of the bottom surface is equal, and the thickness of the light exit surface is equal to ensure uniform light emission.
  • the quantum dot lenses of the fifth to eighth embodiments can be prepared in two different ways. Taking the fifth embodiment as an example, the first manufacturing method is as shown in FIG. 11. First, the mold is controlled to inject the silicone into a silicone layer 64 of a rotating body; the bottom surface of the rotating body is a plane light incident surface, and the light exit surface is a hemisphere. a diffuse exit surface of a shape or a semi-ellipsoid; a rectangular cavity filling cavity 62 is formed at the bottom of the rotating body. The quantum dot material is then injected into the filling cavity 62 at the bottom of the rotating body to form a quantum dot lens. That is, the method firstly molds the outside of the quantum dot lens, and leaves a cavity for injecting the quantum dot material inside, and finally injects the quantum dot material into the cavity.
  • Another method is to prepare the inner quantum dot material before preparing the outer silica gel layer.
  • the specific method is shown in Figure 12: firstly, the mold is controlled to form a rectangular parallelepiped filling cavity 62, and the quantum dot material is molded into a square body.
  • the quantum dot material is wrapped into a silica gel layer 64 of a rotating body by using a silica gel.
  • the bottom surface of the rotating body is a plane light incident surface, and the light exiting surface is a hemispherical or semi-ellipsoidal diffusion.
  • the quantum dot material is located at the bottom of the rotating body.
  • the above two methods can be used not only for manufacturing a hemispherical or semi-ellipsoidal diffusing exit surface, but also for a hemispherical or semi-ellipsoidal, double-ball butterfly with a tapered diffusing hole in the sixth to eighth embodiments.
  • Both the profile and the plane with the tapered diffuser can be made using these two methods, the only difference being that the molds that diffuse the exit face are controlled differently.
  • a plurality of different shapes of diffusion exit surfaces are provided for increasing the illumination angle, so that the illumination is more uniform, and the luminance of the center position is prevented from being too high.

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Abstract

一种量子点透镜（6）及其制造方法，量子点透镜（6）包括形状为旋转体的透镜主体，透镜主体上形成有光线入射面和光线出射面，光线入射面和光线出射面的中心均位于透镜主体的中心轴线上；透镜主体内填充有量子点材料。以及一种量子点透镜（6）的制造方法。该量子点透镜（6）能够配合单颗的LED使用，通过控制量子点形成量子点透镜（6），使得发光角度得到放大，进而减少了量子点材料的使用，降低了制造成本。

Description

一种量子点透镜及其制造方法 技术领域
本发明涉及背光照明技术领域，更具体的说，涉及一种搭配单颗LED使用的量子点透镜及其制造方法。
背景技术
量子点（Quantum Dot，QD）又可以称为纳米晶体，是一种由II－VI族或III－V族元素组成的纳米颗粒。由于量子点的能带带隙与尺寸成反比，通过控制量子点的尺寸就能制备出具有不同发射光谱的量子点。此外，量子点发光光谱半峰宽（约50-60nm）相较于目前LED常用的绿色（半峰宽约80nm），红色荧光粉（半峰宽约100nm）半峰宽更窄。利用上面两个特性，在电视中使用时，能很好的搭配光阻（color filter，CF），实现高穿透率，同时保证高色域（NTSC）。
目前商业量子点材料主要以CdSe为核，CdS为壳。量子点材料受高温及氧气的影响会导致其失效，因此目前商业上量子点的运用都需保护量子点材料。做法主要分为两种，一为采用量子点膜片（QD-film）的形式，通过PET将量子点材料封装起来；另一种形式为量子条形式（QD-rail），采用空心玻璃管封装量子点材料；量子点膜片需要使用较多的量子点材料，而量子条的发光角度的限制，导致了在显示领域的背光使用量子点的话，需要大量的量子条，不符合经济效益。
发明内容
本发明的目的在于，针对现有的量子条的发光角度较小，在进行背光使用的时候，需要大量的量子点材料才能满足需求的缺陷，提供一种可以搭配单颗LED使用的量子点透镜，以解决上述问题。
本发明解决上述问题的方案是，构造一种量子点透镜，量子点透镜包括形状为旋转体的透镜主体，透镜主体上形成有光线入射面和光线出射面，光线入射面和光线出射面的中心均位于透镜主体的中心轴线上；透镜主体内填充有量子点材料。
本发明的量子点透镜，光线出射面为半球面或半椭球面。
本发明的量子点透镜，透镜主体还开设有位于光线出射面中心、用于增大发光角度的锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
本发明的量子点透镜，光线出射面为双球蝴蝶面。
本发明的量子点透镜，光线出射面为平面，透镜主体还开设有位于所述光线出射面中心，用于增大发光角度的锥形的扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
本发明的量子点透镜，透镜主体包括玻璃制成的封装管，封装管内形成与旋转体形状一致的内腔，在内腔中填充有量子点材料。
本发明的量子点透镜，透镜主体包括位于旋转体底部的填充腔和包裹填充腔的硅胶层，在填充腔中填充有量子点材料。
一种量子点透镜制造方法，包括以下步骤：
控制模具，将硅胶注塑成透镜主体；透镜主体为旋转体，透镜主体上形成有光线入射面和光线出射面，光线入射面和光线出射面的中心均位于透镜主体的中心轴线上；在旋转体底部形成填充腔；
在填充腔内注入量子点材料。
本发明的量子点透镜制造方法，光线出射面为半球面或半椭球面。
本发明的量子点透镜制造方法，透镜主体还开设有位于光线出射面中心、用于增大发光角度的锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
本发明的量子点透镜制造方法，光线出射面为双球蝴蝶面。
本发明的量子点透镜制造方法，光线出射面为平面，位于光线出射面中心开设有锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
一种量子点透镜制造方法，包括以下步骤：
控制模具，将量子点材料注塑成预定的形状；
在量子点材料外，使用硅胶将量子点材料包裹成透镜主体，所述透镜主体为旋转体，所述透镜主体上形成有光线入射面和光线出射面，所述光线入射面和所述光线出射面的中心均位于所述透镜主体的中心轴线上；量子点材料位于透镜主体的底部。
本发明的量子点透镜制造方法，光线出射面为半球面或半椭球面。
本发明的量子点透镜制造方法，透镜主体还开设有位于光线出射面中心、用于增大发光角度的锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
本发明的量子点透镜制造方法，光线出射面为双球蝴蝶面。
本发明的量子点透镜制造方法，光线出射面为平面，位于光线出射面中心开设有锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
实施本发明的量子点透镜及其制造方法，能够配合单颗的LED使用，通过控制量子点形成量子点透镜，使得发光角度得到放大，进而减少了量子点材料的使用，降低了制造成本。由于从量子点材料中激发出来的光能够直接满足大发光角度的需要，无需再配合二次透镜进行配光，从而提高了在背光使用中的背光品味，实现了在直下式背光中的高色域要求。
附图说明
以下结合附图对本发明进行说明，其中：
图1为现有的量子条与LED的组装结构示意图；
图2为本发明第一实施例的量子点透镜与LED组装在一起时的示意图；
图3为图2所示的量子点透镜的示意图；
图4为本发明第二实施例的量子点透镜的示意图；
图5为本发明第三实施例的量子点透镜的示意图；
图6为本发明第四实施例的量子点透镜的示意图；
图7为本发明第五实施例的量子点透镜的示意图；
图8为本发明第六实施例的量子点透镜的示意图；
图9为本发明第七实施例的量子点透镜的示意图；
图10为本发明第八实施例的量子点透镜的示意图；
图11为本发明量子点透镜制造方法的第一实施例的流程图；
图12为本发明量子点透镜制造方法的第二实施例的流程图。
具体实施方式
以下结合附图和具体实施方式对本发明进行详细说明。
如图1所示为现有的LED配合量子点进行显示组织结构图侧视图。在铝基板1的其中一个面上，向上延伸出混合杯4（mixing cup），混合杯4的中部留有用于承载蓝色LED 2（Blue LED）和晶片3的空腔，该空腔的顶部安放有长方体结构的量子条5。电流流过晶片3时，激发蓝色LED 2产生蓝光，蓝光激发量子条5发出与量子条5中与量子材料尺寸对应波长的光线。
受限于LED的尺寸，图1中的LED发光角度较小，只能达到约120°的发光范围，若作为背光使用时，需要大量的使用图1中的LED才能达到足够的发光面积，这样将会耗费较多的量子点材料，成本较高。为此，本发明提供如图2所示的一种搭配单颗LED使用的量子点透镜，来提高出射光的发光角度，进而减少LED的数量，从而实现降低制造成本。在本实施例中，将现有的量子条5替换为量子点透镜6。量子点透镜6的透镜主体为旋转体，旋转体的底面为平面的光线入射面，光线出射面为半球形或半椭球形的扩散出射面，旋转体的中心轴经过光线入射面和光线出射面中心，量子点透镜6内填充有量子点材料。在本实施例中，量子点透镜6的结构如图3所示。量子点透镜6的外层为一层薄的玻璃管61，用于封装量子点材料，内部为与量子点透镜6形状一致的填充腔62，填充腔62用于灌入量子点材料。在本实施例中，填充的量子点材料为折射率约2.45的半导体材料，该量子点材料首先溶解在折射率为1.328的甲醇或者折射率为1.375的己烷中，形成液态形式，然后再将混合好的液体注入到填充腔62中，形成量子点透镜6。由于折射率的差异，当LED的光线依次经过平整的入射面和球形或者椭球形的扩散出射面后，能够实现发光角度的增大，尤其适合直下式的背光（backlight unit， BLU）中使用，能够保证BLU的亮度分布均匀，同时减少LED以及量子点透镜的使用数量。
为了进一步增加量子点透镜在四周的亮度，使得整体发光效果更为平均，本发明提供了如图4所示的量子点透镜的第二实施例。本实施例是基于第一实施例的一种改进形式。在半球形或者半椭球型的顶部中心位置，向内部开设一个锥形的扩射孔63，扩射孔63从透镜主体内部向外部逐渐扩大。该扩射孔63的作用是将扩散面中部的光线反射到扩散面的边缘位置，从而扩大发光角度使得整体的出光效果更为平均。
如图5为基于本发明量子点透镜的第三实施例，同样是为了增加量子点透镜在四周的亮度，使得整体发光效果更为平均，对扩散面的形状进行改进。在图5的实施例中，玻璃管61的扩散面为双球蝴蝶形，入射到双球蝴蝶形面中部的光线将会大部分折射到双球蝴蝶形面的四周，从而使得整体的出光效果更为平均。
上述的三个实施例中，扩散面均为拱形，但本发明并不限定于此。如图6本发明量子点透镜的第四实施例，在本实施例中，玻璃管61的扩散面为平面，位于该平面的中心开设有锥形的扩射孔。对于照射在扩射孔的光线反射到扩散面的边缘位置，从而使得整体的出光效果更为平均。
本领域的技术人员应当理解，上述的各个实施例中的量子点透镜的具体尺寸大小依据LED的具体尺寸来进行灵活调整，只要量子点透镜能嵌入混合杯4的顶部并稳定即可；而扩散面的具体形状，例如半球面的曲率半径、锥形孔的深度、锥形孔顶角大小等则依据具体需要扩散的角度进行适应性的选择。
在上述的4个实施例中，通过改变玻璃管61的形状使得填充到内部的量子条形成不同的形状；在本发明的其他实施例中，还可以通过在现有的长方体形状的量子条上进行加工得到与上述4个实施例相同的扩散光线的效果。
如图7为本发明的第五实施例，在本实施例中，使用到的量子点材料将填充到长方体形状的填充腔62中，形成量子条，然后在量子条的外部包裹一层硅胶层64（silicone），形成透镜主体。硅胶层64的底面为平整的光线入射面，光线出射面为半球或者半椭球面的扩散出射面。并且形成量子点透镜中，量子条位于量子点透镜的底部。使用本实施例的量子点透镜，量子点透镜安装在混合杯4上时，从LED发出的光首先经过硅胶层64底部的平整入射面，然后入射到量子条中，量子条受到LED的光线的激发，产生对应于量子材料尺寸的激发光，然后经过硅胶层64顶部的半球形或者半椭球形的扩散出射面进行发光角度的扩大。
对应于本发明的第二至四实施例，在使用硅胶层64包裹长方体的量子条的时候，可以采用多种方式提高出射光的扩散角度。例如，图8为本发明的第六实施例，本实施例为第五实施例的一种改进，在半球形或者半椭球形的出射面的顶部中心，开设一个锥形的扩射孔，来自量子条的激发光在照射到位于中部的锥形扩射孔时，将会反射到扩散面的边缘位置，从而使得整体的出光效果更为平均。
图9为本发明的第七实施例，硅胶层64的顶部的光线出射面为双球蝴蝶形面，底面的光线入射面为光滑平面。硅胶层64内部的量子条位于靠近底面的一侧，当LED的发射光从底面入射后，将会经过量子条，量子条受到激发，产生与其量子点材料尺寸相配的光线，由于硅胶的折射率为1.45至1.55的高折射率，当光线从双球蝴蝶形面出射的时候，发射光线的发光角度将会扩大，并且位于中部位置的光线更多的向四周偏折，从而使得出光更加平均。
图10为本发明的第八实施例，硅胶层64的顶部出射面为带有锥形反射孔的平面，扩射孔从透镜主体内部向外部逐渐扩大。当光线照射在锥形孔位于硅胶层内的侧壁上时，由于硅胶的高折射率，光线将会发生全反射，进而从量子点透镜的两侧出射，实现了大角度的出光。
在制备上述各个实施例的量子点透镜时，依据量子点透镜的形状结构，会有不同的制备方式。对于本发明的第一至第四实施例，采用了玻璃管61作为外部壳体，这四个实施例的制备方式相似：首先使用模具进行塑形，制备出具有填充腔62的玻璃壳体，填充腔62的形状与玻璃壳体的外部形状相匹配；然后将量子点材料溶解在溶液中，例如溶解在折射率为1.328的甲醇或者折射率为1.375的己烷中，形成液态形式，然后再将混合好的液体注入到空腔中，形成量子点透镜。其中，制备出来的玻璃壳体的底面为光滑平面，而光线出射面则对应于第一实施例第四实施例，分别为半球形或半椭球形、带有锥形孔的半球形或半椭球形、双球蝴蝶形以及带有锥形孔的平面。
一般的在制备玻璃管61的时候，控制其玻璃厚度相等，或者是底面的厚度处处相等，光线出射面的厚度处处相等，以保证发出的光线均匀。
而第五至第八实施例的量子点透镜可以通过两种不同的方式制备出来。以第五实施例作为例子，第一种制造方法如图11所示，首先控制模具，将硅胶注塑成旋转体的硅胶层64；旋转体的底面为平面的光线入射面，光线出射面为半球形或者半椭球形的扩散出射面；在旋转体底部形成长方体的填充腔62。然后将量子点材料注入到旋转体底部的填充腔62中，形成量子点透镜。即，该方法是先将量子点透镜的外部注塑好，并在内部留有用于注入量子点材料的空腔，最后才将量子点材料注入到空腔。
另一种方法是先将内部的量子点材料制备好，然后才制备外部的硅胶层，具体的方法如图12所示：首先控制模具形成一个长方体的填充腔62，将量子点材料注塑成长方体；在制备好的长方体量子点材料外，使用硅胶将量子点材料包裹成旋转体的硅胶层64，旋转体的底面为平面的光线入射面，光线出射面为半球形或者半椭球形的扩散出射面；量子点材料位于旋转体的底部。
上面的两种方法并不仅可以用于制造半球形或者半椭球形的扩散出射面，对于第六至第八实施例中的带有锥形扩射孔的半球形或者半椭球形、双球蝴蝶形面以及带有锥形扩射孔的平面，均可使用这两种方法制造出来，其区别仅在于扩散出射面的模具控制方式不同。
在以上的各个实施例中，给出了多种不同形状的扩散出射面，用于增大发光角度，使得发光更加均匀，避免中心位置的发光亮度过高。本领域的技术人员可以依据光学原理的进行一般替换设计。
以上仅为本发明具体实施方式，不能以此来限定本发明的范围，本技术领域内的一般技术人员根据本创作所作的均等变化，以及本领域内技术人员熟知的改变，都应仍属本发明涵盖的范围。

Claims (17)

  1. 一种量子点透镜，其中，所述量子点透镜包括形状为旋转体的透镜主体，所述透镜主体上形成有光线入射面和光线出射面，所述光线入射面和所述光线出射面的中心均位于所述透镜主体的中心轴线上；所述透镜主体内填充有量子点材料。
  2. 根据权利要求1所述的量子点透镜，其中，所述光线入射面为平面，所述光线出射面为半球面或半椭球面。
  3. 根据权利要求2所述的量子点透镜，其中，所述透镜主体还开设有位于光线出射面中心，用于增大发光角度的锥形的扩射孔，所述扩射孔的直径从透镜主体内部向外部逐渐扩大。
  4. 根据权利要求1所述的量子点透镜，其中，所述光线出射面为双球蝴蝶面。
  5. 根据权利要求1所述的量子点透镜，其中，所述光线出射面为平面，所述透镜主体还开设有位于所述光线出射面中心，用于增大发光角度的锥形的扩射孔，所述扩射孔的直径从透镜主体内部向外部逐渐扩大。
  6. 根据权利要求1所述的量子点透镜，其中，所述透镜主体包括玻璃制成的封装管，所述封装管内形成与所述旋转体形状一致的填充腔，在所述填充腔中填充有所述量子点材料。
  7. 根据权利要求1所述的量子点透镜，其中，所述透镜主体包括位于所述旋转体底部的填充腔和包裹所述填充腔的硅胶层，在所述填充腔中填充有所述量子点材料。
  8. 一种量子点透镜的制造方法，包括以下步骤：
    控制模具，将硅胶注塑成透镜主体；所述透镜主体为旋转体，所述透镜主体上形成有光线入射面和光线出射面，所述光线入射面和所述光线出射面的中心均位于所述透镜主体的中心轴线上；在所述旋转体底部形成填充腔；
    在所述填充腔内注入量子点材料。
  9. 根据权利要求8所述量子点透镜制造方法，其中，光线出射面为半球面或半椭球面。
  10. 根据权利要求9所述量子点透镜制造方法，其中，透镜主体还开设有位于光线出射面中心、用于增大发光角度的锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
  11. 根据权利要求8所述的量子点透镜制造方法，其中，光线出射面为双球蝴蝶面。
  12. 根据权利要求8所述的量子点透镜制造方法，其中，光线出射面为平面，位于光线出射面中心开设有锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
  13. 一种量子点透镜的制造方法，包括以下步骤：
    控制模具，将量子点材料注塑成预定的形状；
    在所述量子点材料外，使用硅胶将量子点材料包裹成透镜主体，所述透镜主体为旋转体，所述透镜主体上形成有光线入射面和光线出射面，所述光线入射面和所述光线出射面的中心均位于所述透镜主体的中心轴线上；量子点材料位于所述透镜主体的底部。
  14. 根据权利要求13所述的量子点透镜制造方法，其中，光线出射面为半球面或半椭球面。
  15. 根据权利要求14所述的量子点透镜制造方法，其中，透镜主体还开设有位于光线出射面中心、用于增大发光角度的锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
  16. 根据权利要求13所述的量子点透镜制造方法，其中，光线出射面为双球蝴蝶面。
  17. 根据权利要求13所述的量子点透镜制造方法，其中，光线出射面为平面，位于光线出射面中心开设有锥形扩射孔，扩射孔的直径从透镜主体内部向外部逐渐扩大。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112128644A (zh) * 2020-09-26 2020-12-25 深圳市莱盎科技有限公司 均匀混光硅胶挤出cob灯带

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015220330A (ja) * 2014-05-16 2015-12-07 日本電気硝子株式会社 発光デバイス及びその製造方法
CN105444045A (zh) * 2014-09-24 2016-03-30 青岛海信电器股份有限公司 一种发光二极管led发光器件、背光模组及显示面板
CN104864313A (zh) 2015-05-22 2015-08-26 北京京东方茶谷电子有限公司 一种背光模组、显示模组和显示装置
CN106383420A (zh) * 2016-08-31 2017-02-08 张家港康得新光电材料有限公司 一种量子点发光器件及背光模组
CN106299090A (zh) * 2016-10-10 2017-01-04 天津中环电子照明科技有限公司 一种远程量子点白光led封装器件
CN106340579A (zh) * 2016-10-10 2017-01-18 天津中环电子照明科技有限公司 一种基于蓝光led芯片的远程量子点led器件
CN107093661A (zh) * 2017-04-11 2017-08-25 安徽芯瑞达科技股份有限公司 一种新型的全无机钙钛矿量子点材料薄膜涂覆的光学透镜及其制备方法
CN107093662A (zh) * 2017-04-11 2017-08-25 安徽芯瑞达科技股份有限公司 一种新型的全无机钙钛矿量子点硅胶透镜及其制备方法
CN107246563A (zh) * 2017-07-26 2017-10-13 合肥惠科金扬科技有限公司 量子点背光模组、显示器及量子点透镜制作方法
CN108227291B (zh) * 2018-02-01 2022-04-12 京东方科技集团股份有限公司 一种彩色滤光片、其制作方法、显示面板及显示装置
CN108506794A (zh) * 2018-02-28 2018-09-07 惠州市华星光电技术有限公司 一种量子点灯管及显示装置
CN109407400A (zh) * 2018-11-23 2019-03-01 深圳Tcl新技术有限公司 直下式背光模组及显示设备
CN109860717B (zh) * 2019-01-23 2020-10-16 清华大学深圳研究生院 一种锂离子电池的原位拉曼检测方法及其专用锂离子电池
CN111627345B (zh) * 2020-06-09 2022-05-03 上海天马微电子有限公司 显示面板及其制作方法、显示装置
CN113514982A (zh) * 2021-04-12 2021-10-19 惠州市华星光电技术有限公司 量子点透镜及背光模组
CN114777078B (zh) * 2022-04-19 2024-07-12 东莞雷笛克光学有限公司 一种led量子点透镜

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280565A (zh) * 2010-06-14 2011-12-14 三星Led株式会社 使用量子点的发光装置封装件、照明设备和显示设备
CN202216173U (zh) * 2011-08-08 2012-05-09 浙江生辉照明有限公司 一种用于led灯具的透镜
CN202493960U (zh) * 2012-04-01 2012-10-17 德清新明辉电光源有限公司 大角度光输出led灯
CN202493959U (zh) * 2012-04-01 2012-10-17 德清新明辉电光源有限公司 白光led发光模组
CN103328605A (zh) * 2011-01-28 2013-09-25 昭和电工株式会社 包含量子点荧光体的组合物、量子点荧光体分散树脂成型体、包含量子点荧光体的结构物、发光装置、电子设备、机械装置及量子点荧光体分散树脂成型体的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982991B1 (ko) * 2008-09-03 2010-09-17 삼성엘이디 주식회사 양자점 파장변환체, 양자점 파장변환체의 제조방법 및 양자점 파장변환체를 포함하는 발광장치
WO2012088404A1 (en) * 2010-12-23 2012-06-28 Qd Vision, Inc. Quantum dot containing optical element
CN102537836B (zh) * 2010-12-31 2013-10-09 海洋王照明科技股份有限公司 泛光全反射透镜以及led灯具
CN102748707B (zh) * 2011-04-21 2014-05-14 海洋王照明科技股份有限公司 一种泛光全反射透镜及使用该透镜的led灯具
CN102570283B (zh) * 2012-01-11 2013-06-19 中国人民解放军国防科学技术大学 激光泵浦的流动纳米颗粒稀土离子激光器
CN102818216B (zh) * 2012-06-05 2014-08-06 佛山市国星光电股份有限公司 一种大角度透镜及大角度出光的led光源模块

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280565A (zh) * 2010-06-14 2011-12-14 三星Led株式会社 使用量子点的发光装置封装件、照明设备和显示设备
CN103328605A (zh) * 2011-01-28 2013-09-25 昭和电工株式会社 包含量子点荧光体的组合物、量子点荧光体分散树脂成型体、包含量子点荧光体的结构物、发光装置、电子设备、机械装置及量子点荧光体分散树脂成型体的制造方法
CN202216173U (zh) * 2011-08-08 2012-05-09 浙江生辉照明有限公司 一种用于led灯具的透镜
CN202493960U (zh) * 2012-04-01 2012-10-17 德清新明辉电光源有限公司 大角度光输出led灯
CN202493959U (zh) * 2012-04-01 2012-10-17 德清新明辉电光源有限公司 白光led发光模组

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112128644A (zh) * 2020-09-26 2020-12-25 深圳市莱盎科技有限公司 均匀混光硅胶挤出cob灯带

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