WO2015079863A1 - 積層体、基材の処理方法、仮固定用組成物および半導体装置 - Google Patents
積層体、基材の処理方法、仮固定用組成物および半導体装置 Download PDFInfo
- Publication number
- WO2015079863A1 WO2015079863A1 PCT/JP2014/078908 JP2014078908W WO2015079863A1 WO 2015079863 A1 WO2015079863 A1 WO 2015079863A1 JP 2014078908 W JP2014078908 W JP 2014078908W WO 2015079863 A1 WO2015079863 A1 WO 2015079863A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- temporary fixing
- polymer
- release agent
- layer
- support
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 65
- 238000012545 processing Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000463 material Substances 0.000 claims abstract description 183
- 229920000642 polymer Polymers 0.000 claims abstract description 123
- 125000000524 functional group Chemical group 0.000 claims abstract description 83
- 239000000126 substance Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims description 91
- 239000003795 chemical substances by application Substances 0.000 claims description 82
- 229920001296 polysiloxane Polymers 0.000 claims description 58
- 229920005989 resin Polymers 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 51
- -1 polysiloxane Polymers 0.000 claims description 49
- 125000004432 carbon atom Chemical group C* 0.000 claims description 35
- 125000000217 alkyl group Chemical group 0.000 claims description 30
- 229920005992 thermoplastic resin Polymers 0.000 claims description 20
- 125000003342 alkenyl group Chemical group 0.000 claims description 13
- 239000006082 mold release agent Substances 0.000 claims description 13
- 150000001993 dienes Chemical class 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 125000001931 aliphatic group Chemical group 0.000 claims description 9
- 229920001187 thermosetting polymer Polymers 0.000 claims description 8
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 6
- 238000013508 migration Methods 0.000 abstract description 5
- 230000005012 migration Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 103
- 239000012790 adhesive layer Substances 0.000 description 39
- 206010040844 Skin exfoliation Diseases 0.000 description 31
- 235000012431 wafers Nutrition 0.000 description 26
- 150000001875 compounds Chemical class 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 229920002554 vinyl polymer Polymers 0.000 description 17
- 239000000178 monomer Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000003208 petroleum Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000005227 gel permeation chromatography Methods 0.000 description 11
- 239000004793 Polystyrene Substances 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 10
- 229920002223 polystyrene Polymers 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 229920003986 novolac Polymers 0.000 description 9
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 8
- 239000005062 Polybutadiene Substances 0.000 description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 229920002857 polybutadiene Polymers 0.000 description 8
- 229920003048 styrene butadiene rubber Polymers 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 7
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- 229920000058 polyacrylate Polymers 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 6
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- 150000001491 aromatic compounds Chemical class 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- GGBJHURWWWLEQH-UHFFFAOYSA-N butylcyclohexane Chemical compound CCCCC1CCCCC1 GGBJHURWWWLEQH-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000003566 oxetanyl group Chemical group 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- FZSPYHREEHYLCB-UHFFFAOYSA-N 1-tert-butyl-3,5-dimethylbenzene Chemical compound CC1=CC(C)=CC(C(C)(C)C)=C1 FZSPYHREEHYLCB-UHFFFAOYSA-N 0.000 description 2
- OGRAOKJKVGDSFR-UHFFFAOYSA-N 2,3,5-trimethylphenol Chemical compound CC1=CC(C)=C(C)C(O)=C1 OGRAOKJKVGDSFR-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- 238000006677 Appel reaction Methods 0.000 description 2
- 241000132023 Bellis perennis Species 0.000 description 2
- 235000005633 Chrysanthemum balsamita Nutrition 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 101000650578 Salmonella phage P22 Regulatory protein C3 Proteins 0.000 description 2
- 101001040920 Triticum aestivum Alpha-amylase inhibitor 0.28 Proteins 0.000 description 2
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- 125000001118 alkylidene group Chemical group 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- HYPABJGVBDSCIT-UPHRSURJSA-N cyclododecene Chemical compound C1CCCCC\C=C/CCCC1 HYPABJGVBDSCIT-UPHRSURJSA-N 0.000 description 2
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 2
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 2
- 239000004914 cyclooctane Substances 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000003951 lactams Chemical class 0.000 description 2
- 229940087305 limonene Drugs 0.000 description 2
- 235000001510 limonene Nutrition 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- 0 *[N+]([N-])[N+]([O-])O* Chemical compound *[N+]([N-])[N+]([O-])O* 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- HXJZEGBVQCRLOD-UHFFFAOYSA-N 1-triethoxysilylpropan-2-amine Chemical compound CCO[Si](CC(C)N)(OCC)OCC HXJZEGBVQCRLOD-UHFFFAOYSA-N 0.000 description 1
- KBRVQAUYZUFKAJ-UHFFFAOYSA-N 1-trimethoxysilylpropan-2-amine Chemical compound CO[Si](OC)(OC)CC(C)N KBRVQAUYZUFKAJ-UHFFFAOYSA-N 0.000 description 1
- JDVGNKIUXZQTFD-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)COC(=O)C=C JDVGNKIUXZQTFD-UHFFFAOYSA-N 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical compound CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 1
- GLUOGZCHYVWCAK-UHFFFAOYSA-N 2-[2-(3-triethoxysilylpropylamino)ethylamino]ethyl acetate Chemical compound CCO[Si](OCC)(OCC)CCCNCCNCCOC(C)=O GLUOGZCHYVWCAK-UHFFFAOYSA-N 0.000 description 1
- CYPTUSHYKRVMKI-UHFFFAOYSA-N 2-[2-(3-trimethoxysilylpropylamino)ethylamino]ethyl acetate Chemical compound CO[Si](OC)(OC)CCCNCCNCCOC(C)=O CYPTUSHYKRVMKI-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- QQOMQLYQAXGHSU-UHFFFAOYSA-N 236TMPh Natural products CC1=CC=C(C)C(O)=C1C QQOMQLYQAXGHSU-UHFFFAOYSA-N 0.000 description 1
- MQSXUKPGWMJYBT-UHFFFAOYSA-N 3-butylphenol Chemical compound CCCCC1=CC=CC(O)=C1 MQSXUKPGWMJYBT-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- CYYZDBDROVLTJU-UHFFFAOYSA-N 4-n-Butylphenol Chemical compound CCCCC1=CC=C(O)C=C1 CYYZDBDROVLTJU-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VHOQXEIFYTTXJU-UHFFFAOYSA-N Isobutylene-isoprene copolymer Chemical compound CC(C)=C.CC(=C)C=C VHOQXEIFYTTXJU-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229940118056 cresol / formaldehyde Drugs 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000005670 ethenylalkyl group Chemical group 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- MVUXVDIFQSGECB-UHFFFAOYSA-N ethyl n-(3-triethoxysilylpropyl)carbamate Chemical compound CCOC(=O)NCCC[Si](OCC)(OCC)OCC MVUXVDIFQSGECB-UHFFFAOYSA-N 0.000 description 1
- MHBPZEDIFIPGSX-UHFFFAOYSA-N ethyl n-(3-trimethoxysilylpropyl)carbamate Chemical compound CCOC(=O)NCCC[Si](OC)(OC)OC MHBPZEDIFIPGSX-UHFFFAOYSA-N 0.000 description 1
- VPASWAQPISSKJP-UHFFFAOYSA-N ethyl prop-2-enoate;isocyanic acid Chemical compound N=C=O.CCOC(=O)C=C VPASWAQPISSKJP-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- VNRDAMBPFDPXSM-UHFFFAOYSA-N n'-[2-(3-triethoxysilylpropylamino)ethyl]ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCNCCN VNRDAMBPFDPXSM-UHFFFAOYSA-N 0.000 description 1
- NHBRUUFBSBSTHM-UHFFFAOYSA-N n'-[2-(3-trimethoxysilylpropylamino)ethyl]ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCNCCN NHBRUUFBSBSTHM-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- LIBWSLLLJZULCP-UHFFFAOYSA-N n-(3-triethoxysilylpropyl)aniline Chemical compound CCO[Si](OCC)(OCC)CCCNC1=CC=CC=C1 LIBWSLLLJZULCP-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- ILRLVKWBBFWKTN-UHFFFAOYSA-N n-benzyl-3-triethoxysilylpropan-1-amine Chemical compound CCO[Si](OCC)(OCC)CCCNCC1=CC=CC=C1 ILRLVKWBBFWKTN-UHFFFAOYSA-N 0.000 description 1
- CLYWMXVFAMGARU-UHFFFAOYSA-N n-benzyl-3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCNCC1=CC=CC=C1 CLYWMXVFAMGARU-UHFFFAOYSA-N 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B37/1284—Application of adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J165/00—Adhesives based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Adhesives based on derivatives of such polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/26—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the lamination process, e.g. release layers or pressure equalising layers
- B32B2037/268—Release layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/748—Releasability
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
- C08G2261/332—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms
- C08G2261/3324—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms derived from norbornene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/40—Polymerisation processes
- C08G2261/41—Organometallic coupling reactions
- C08G2261/418—Ring opening metathesis polymerisation [ROMP]
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Definitions
- the present invention provides a laminate in which a base material is temporarily fixed on a support via a temporary fixing material, a method for processing the base material, and a temporary fixing of the base material on the support when the base material is processed.
- the present invention relates to a raw material composition for a temporarily fixing material and a semiconductor device that can be suitably used.
- a method has been proposed in which a base material such as a semiconductor wafer is bonded to a support such as a glass substrate via a temporary fixing material, and processes such as back surface grinding of the base material and back electrode formation are performed.
- This temporary fixing material needs to be able to temporarily fix the base material on the support during the processing, and to easily peel the base material from the support after the processing.
- two-layer or three-layer temporary fixing materials have been proposed in consideration of the adhesiveness, peelability, heat resistance, etc. of the temporary fixing materials (for example, Patent Documents 1 to 4). 3).
- Patent Document 1 discloses a wafer processed body in which a temporary adhesive layer is formed on a support, and a wafer having a circuit surface on the front surface and a back surface processed is laminated on the temporary adhesive layer.
- the temporary adhesive layer includes a first temporary adhesive layer made of a non-reactive thermoplastic organopolysiloxane polymer layer (A) that is detachably bonded to the surface of the wafer, and the first temporary adhesive layer.
- a second temporary adhesive layer made of a thermosetting modified siloxane polymer layer (B) laminated on the layer and releasably adhered to the support.
- the release agent contained in the layer in contact with the base material moves to another layer such as a layer in contact with the support.
- a layer in contact with the support As a result, it was found that the peelability was lowered and peeling at an undesired location occurred, and a lot of temporary fixing materials remained on the substrate. In this case, it takes a lot of time to remove the residue of the temporarily fixing material.
- An object of the present invention is to prevent a release agent contained in a layer in contact with a base material from moving to another layer such as a layer in contact with a support in a multi-layer temporary fixing material such as a two-layer system.
- the purpose is to reduce the amount of the temporary fixing material remaining on the base material when the base material is peeled from the body.
- the present inventors have intensively studied to solve the above problems. As a result, the present inventors have found that the above problems can be solved by a laminate having the following configuration and a processing method, and have completed the present invention.
- the present invention relates to the following [1] to [10], for example.
- a laminate comprising a temporary fixing composition containing a release agent (B) having a functional group capable of reacting with and forming a chemical bond.
- the release agent (B) is at least one selected from a silicone release agent (B1), a fluorine release agent (B2), and an aliphatic release agent (B3).
- the release agent (B) is at least one structure selected from a diaryl silicone structure, a dialkyl silicone structure, a fluorinated alkyl structure, a fluorinated alkenyl structure, and an alkyl structure having 8 or more carbon atoms, and the polymer.
- the functional groups that the release agent (B) can react with the polymer (A) to form a chemical bond are groups having a polymerizable double bond.
- the polymer (A) is a diene polymer having a polymerizable double bond, a (meth) acrylic acid alkyl ester polymer having a polymerizable double bond, and a poly having a polymerizable double bond.
- the temporary fixing material layer (II) contains at least one resin selected from a thermoplastic resin (C) and a thermosetting resin (D), and reacts with the polymer (A) to form a chemistry.
- Temporary fixing material layer (I) in contact with a support-side surface of the base material on the support, and a temporary surface formed on the support-side surface of the layer (I) A mold release agent having a fixing material layer (II), the temporary fixing material layer (I) having a functional group capable of forming a chemical bond by reacting with the polymer (A) and the polymer (A).
- (2) a step of obtaining a laminate by temporarily fixing via a temporary fixing material formed from a temporary fixing composition comprising: ⁇ 2> processing the base material and / or A method for treating a substrate, comprising: a step of moving the laminate; and ⁇ 3> a step of peeling the substrate from the support.
- a composition for temporary fixing comprising (A) a polymer and (B) a release agent having a functional group capable of reacting with the polymer (A) to form a chemical bond.
- the release agent (B) is at least one structure selected from a diaryl silicone structure, a dialkyl silicone structure, a fluorinated alkyl structure, a fluorinated alkenyl structure, and an alkyl structure having 8 or more carbon atoms, and the polymer.
- the release agent contained in the layer in contact with the base material is prevented from moving to another layer such as a layer in contact with the support, and supported.
- the amount of the temporary fixing material remaining on the base material can be reduced.
- FIG. 1 is a cross-sectional view of an embodiment according to the laminate of the present invention.
- FIG. 2 is a view for explaining temporarily fixing material residues when the substrate is peeled from the support.
- the temporary fixing material and the temporary fixing composition which is a raw material composition thereof, it is obtained by the substrate processing method using the temporary fixing material and the substrate processing method.
- a semiconductor device to be manufactured will be described.
- the temporary fixing material refers to a material used for temporarily fixing a base material on a support so that the base material is not displaced and moved when the base material is processed and / or moved. is there.
- the processing include dicing; back surface grinding; resist pattern formation, metal bump formation by plating, film formation by chemical vapor deposition, and processing by photofabrication such as reactive ion etching (RIE).
- RIE reactive ion etching
- Examples of the movement include moving the base material from one apparatus to another apparatus.
- the laminated body of the present invention is a laminated body in which a base material is temporarily fixed on a support via a temporary fixing material, and the temporary fixing material is a surface on the support side of the base material. It has a temporary fixing material layer (I) in contact with the temporary fixing material layer (II) formed on the surface of the layer (I) on the support side.
- the temporary fixing material layer (I) contains a polymer (A), which will be described later, and a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond. It can be formed using the fixing composition (I).
- a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond. It can be formed using the fixing composition (I).
- peeling a base material from a support body peeling by the interface of a base material and layer (I) and peeling by the cohesive failure in layer (I) mainly occur.
- the layer (I) is also referred to as “release layer (I)”.
- the temporary fixing material layer (II) is a layer for temporarily fixing a base material to a support, and a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond. Is substantially not contained.
- the layer (II) can be formed using a temporary fixing composition (II) that does not substantially contain the release agent (B), which will be described later.
- the layer (II) is also referred to as “adhesive layer (II)”.
- the temporary fixing material has an adhesive layer (II) and a release layer (I) formed on this layer (II).
- the temporary fixing material satisfying all the functions that are in contradiction such as adhesiveness, peelability and heat resistance necessary for the temporary fixing material. There is an advantage that.
- the laminated body 1 includes a support body 10, a temporary fixing material 20 formed on the support body 10, and a base material 30 having bumps 31 that are temporarily fixed to the support body 10 by the temporary fixing material 20.
- the temporary fixing material 20 includes an adhesive layer 21 in contact with the support 10, and a release layer 22 formed on the adhesive layer 21 and in contact with the base material 30.
- FIG. 1 shows an example of the laminate of the present invention.
- other layers may be provided.
- FIG. 1 An example of a peeling form when peeling the substrate from the support is shown in FIG.
- the release layer 22 is formed from a temporary fixing composition containing a polymer (A) and a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond.
- the release agent 22 contained in the release layer 22 reacts with the release agent (B) when the release layer 22 is formed or when high temperature is applied during the processing of the substrate. It is presumed that the component is suppressed from moving to the adhesive layer 21 and the release property of the release layer 22 is maintained. Therefore, as shown in FIG.
- the release layer 22 has a functional group capable of forming a chemical bond by reacting with the polymer (A) and the polymer (A) as a release agent (B ′).
- the mold release agent component contained in the mold release layer 22 moves to the adhesive layer 21, and the peelability of the mold release layer 22 is lowered.
- FIG. 2 (ii) for example, when the base material 30 is peeled in a direction perpendicular to the base material surface, peeling at the interface between the support 10 and the adhesive layer 21 or aggregation at the adhesive layer 21 Peeling due to destruction occurs, and the residue 102 derived from the temporarily fixed material on the base material 30 increases. Therefore, it tends to require a lot of time to remove the residue using the solvent.
- the temporary fixing material may have any other layer in addition to the release layer (I) and the adhesive layer (II), but includes the release layer (I) and the adhesive layer (II).
- a two-layer temporary fixing material is preferred.
- the total thickness of the temporary fixing material can be arbitrarily selected according to the size of the temporary fixing surface of the base material, the degree of adhesion required for processing, and the like.
- the total thickness of the temporary fixing material is usually more than 0.1 ⁇ m and 2 mm or less, preferably more than 0.1 ⁇ m and 1 mm or less, more preferably more than 0.1 ⁇ m and 0.5 mm or less.
- the thicknesses of the release layer (I) and the adhesive layer (II) are usually 0.1 to 200 ⁇ m, preferably 1 to 150 ⁇ m, more preferably 10 to 120 ⁇ m. When these thicknesses are in the above-mentioned range, the holding power of the base material is sufficient, and the base material does not peel off from the temporarily fixed surface during the processing or moving process.
- the substrate can be temporarily fixed on the support at a temperature of 300 ° C. or lower, for example, and in a high temperature environment such as solder reflow (eg, 225 ° C.).
- a high temperature environment such as solder reflow (eg, 225 ° C.).
- the substrate can be held on the support even at 225 to 300 ° C.
- the temporary fixing material can withstand a shearing force applied by a back grind performed in a temperature range of 0 to 100 ° C., for example, and can hold the substrate on the support.
- the temporary fixing material is formed by reducing the thickness of a base material and photofabrication performed around 25 ° C., for example, etching processing or sputtering film formation performed at a temperature range of 25 to 300 ° C., and temperature range of 225 to 300 ° C.
- the substrate can be held on the support also in the plating process, the plating reflow process, and the like performed in (1).
- the temporary fixing material is used in various processing processes required in the context of modern economic activities, such as miniaturization processing of various material surfaces, various surface mounting, transportation of semiconductor wafers and semiconductor elements, etc. It is suitably used as a temporary fixing material.
- the temporary fixing composition release layer (I) includes, for example, a polymer (A) and a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond. It can form using the composition (I) for temporary fixing of this invention which contains.
- the adhesive layer (II) includes, for example, a temporary fixing composition (II) that substantially does not contain a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond. Can be formed.
- Temporary fixing composition (I) contains a polymer (A) and a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond. . More preferably, the temporary fixing composition (I) of the present invention comprises a polymer (A) having a functional group and a functional group capable of reacting with the functional group of the polymer (A) to form a chemical bond. And a release agent (B) having a group.
- the temporary fixing composition (I) may contain a thermoplastic resin (C) that does not form a chemical bond with the release agent (B) by the reaction.
- the polymer (A) examples include a polymer having a functional group capable of forming a chemical bond by reacting with the functional group of the release agent (B) by heating and / or light irradiation (however, the release agent ( The polymer is not particularly limited as long as the polymer falls under B). Examples thereof include rubber, acrylic resin, vinyl alkyl ether resin, polyester resin, polysiloxane resin, polyamide resin, urethane resin, and the like, and polymers having the above functional groups.
- polymer (A) as functional groups capable of reacting with the release agent (B) to form chemical bonds, for example, polymerization of alkenyl groups such as vinyl groups and allyl groups, (meth) acryloyl groups, maleimide groups, etc.
- alkenyl groups such as vinyl groups and allyl groups, (meth) acryloyl groups, maleimide groups, etc.
- a group having a polymerizable double bond; an epoxy group and an oxetanyl group are mentioned.
- a group having a polymerizable double bond is preferred, and an alkenyl group is more preferred.
- Examples of the polymer (A) having a polymerizable double bond include polyisoprene, polybutadiene, butadiene-isoprene copolymer, isobutylene-isoprene copolymer, acrylonitrile-butadiene copolymer, styrene-butadiene copolymer, Examples thereof include diene polymers such as a styrene-isoprene copolymer and a styrene-isoprene-butadiene copolymer.
- the diene polymer preferably has a vinyl bond content of 10 to 100%, more preferably 20 to 80%.
- the diene polymer having a vinyl bond content in the above range easily reacts with the release agent (B) to form a release layer (I) in which the release agent component is inhibited from transferring to other layers. be able to.
- the vinyl bond content refers to 1,2-bond and conjugated diene compound units incorporated in a diene polymer in a 1,2-bond, 3,4-bond, and 1,4-bond bond mode. This is the total proportion of units incorporated by 3,4-bond (based on mol%).
- the vinyl bond content can be determined by an infrared absorption spectrum method (Morero method).
- the polystyrene-reduced number average molecular weight (Mn) of the diene polymer by gel permeation chromatography (GPC) method is usually 1,000 to 100,000, preferably 1,500 to 10,000.
- the content of the structural unit derived from a conjugated diene such as isoprene or 1,3-butadiene is preferably 30% by mass or more from the viewpoint of reactivity with the release agent (B). More preferably, it is 50 mass% or more.
- Examples of the polymer (A) having a polymerizable double bond include (meth) acrylic acid alkyl ester polymers having a polymerizable double bond.
- the polymer synthesizes a (meth) acrylic polymer having a functional group in the molecule (hereinafter also referred to as “functional group-containing (meth) acrylic polymer”) and reacts with the functional group in the molecule. It can be obtained by reacting a compound having a functional group and a polymerizable double bond (hereinafter also referred to as “functional group-containing unsaturated compound”) with the polymer.
- the functional group-containing (meth) acrylic polymer is obtained by, for example, copolymerizing a (meth) acrylic acid alkyl ester whose alkyl group usually has 2 to 18 carbon atoms and a functional group-containing monomer by a conventional method. Can be obtained.
- the weight average molecular weight (Mw) in terms of polystyrene by the GPC method of the functional group-containing (meth) acrylic polymer is usually about 200,000 to 2,000,000.
- Examples of functional group-containing monomers include: carboxyl group-containing monomers such as (meth) acrylic acid; hydroxyl group-containing monomers such as hydroxyethyl (meth) acrylate; epoxy group-containing monomers such as glycidyl (meth) acrylate; Examples include isocyanate group-containing monomers such as isocyanate ethyl acrylate; amino group-containing monomers such as aminoethyl (meth) acrylate.
- the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer is the same as the functional group-containing monomer described above depending on the functional group of the functional group-containing (meth) acrylic polymer. can do.
- the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group
- an epoxy group-containing monomer or an isocyanate group-containing monomer can be used.
- the functional group is a hydroxyl group
- an isocyanate group-containing monomer is used.
- the functional group is an epoxy group
- a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide can be used.
- an amino group an epoxy group-containing monomer can be used. .
- Examples of the polymer (A) having a polymerizable double bond include polysiloxanes having a polymerizable double bond such as alkenyl group-containing polysiloxane.
- Examples of the polymer include polymers described in JP2013-179135A and JP2013-232459A.
- a diene polymer is preferable from the viewpoint of storage stability of the temporary fixing composition.
- a polymer (A) may be used individually by 1 type, and may use 2 or more types together.
- the content of the polymer (A) is usually 1 to 90% by mass, preferably 100% by mass with respect to the total solid content of the temporary fixing composition (I). Is 5 to 60% by mass, more preferably 10 to 40% by mass. When the content of the polymer (A) is in the above range, it is preferable from the viewpoint of adhesiveness, peelability and heat resistance of the temporary fixing material.
- the release agent (B) moves to the coating surface from the inside of the coating until the temporary fixing composition (I) containing the release agent (B) is applied and dried. Are also present on the surface of the coating film, thereby imparting releasability to the coating film.
- the release agent (B) has a functional group capable of reacting with the polymer (A) to form a chemical bond, thereby reacting with the polymer (A) by heating and / or light irradiation to release the mold. Since it is taken into the layer (I), there is little possibility that the release agent component in the release layer (I) will migrate to other layers such as the adhesive layer (II). For this reason, when peeling the substrate from the support, there is little risk of peeling at the interface between the adhesive layer (II) and the support or due to cohesive failure at the adhesive layer (II). Peeling at the interface with the mold layer (I) and peeling due to cohesive failure at the release layer (I) mainly occur. Therefore, there is little residue derived from the temporary fixing material on the substrate after peeling, and even if there is a residue, it can be removed in a short time using a solvent.
- an appropriate group can be selected according to the type of the polymer (A).
- alkenyl groups such as vinyl and allyl groups, groups having a polymerizable double bond such as (meth) acryloyl group; epoxy groups, oxetanyl groups; acidic groups such as phenolic hydroxyl groups and carboxyl groups.
- the functional group of the release agent (B) is preferably a group having a polymerizable double bond, and more preferably a (meth) acryloyl group.
- acidic groups such as a phenolic hydroxyl group and a carboxyl group, are preferable.
- the release agent (B) has a functional group capable of reacting with the polymer (A) to form a chemical bond, and includes a silicone release agent (B1), a fluorine release agent (B2), and an aliphatic release agent.
- the mold agent (B3) is preferred. These may be used alone or in combination of two or more.
- the content of the release agent (B) is preferably 0.001 to 10 with respect to 100% by mass of the total solid content of the temporary fixing composition (I).
- the mass is more preferably 0.01 to 8 mass%, still more preferably 0.03 to 6 mass%.
- the content of the release agent (B) is preferably 0.001 to 10 parts by mass, more preferably 0.01 to 8 parts by mass, and still more preferably 0 with respect to 100 parts by mass of the polymer (A). 1 to 5 parts by mass.
- the release agent (B) is used within the above range, for example, the adhesive force of the temporary fixing material with respect to the force of pulling up the substrate or the support in a direction substantially perpendicular to the substrate surface is sufficiently reduced. It can peel without being damaged.
- Examples of the release agent (B) include at least one structure selected from a diaryl silicone structure, a dialkyl silicone structure, a fluorinated alkyl structure, a fluorinated alkenyl structure, and an alkyl structure having 8 or more carbon atoms, and the polymer ( And compounds having a functional group capable of reacting with A) to form a chemical bond.
- Silicone mold release agent (B1) has a functional group that can react with the polymer (A) to form a chemical bond. Since the silicone release agent (B1) has a functional group capable of reacting with the polymer (A) to form a chemical bond, the silicone release agent (B1) can be well incorporated into the release layer (I). The transfer of (B1) to another layer such as (II) can be prevented, and contamination of the base material by (B1) can also be prevented. Moreover, since it is excellent in heat resistance, the release layer (I) can be prevented from being burnt even after high-temperature processing at, for example, 200 ° C. or higher.
- the silicone release agent (B1) preferably has a functional group capable of reacting with the polymer (A) to form a chemical bond at the side chain or terminal of the silicone skeleton.
- a silicone-based mold release agent having a functional group capable of reacting with the polymer (A) to form a chemical bond at the terminal is preferable because it can easily achieve both high initial adhesiveness and peelability after high-temperature processing. .
- the number of functional groups which the silicone release agent (B1) can react with the polymer (A) to form a chemical bond is preferably 1 to 20, more preferably 2 to 10, still more preferably 2 to 8. is there.
- the silicone release agent (B1) can be prevented from being taken into the release layer (I) and transferred to other layers such as the adhesive layer (II).
- Release properties can be imparted to the release layer (I).
- the release layer (I) tends to exhibit a sufficient holding power with respect to the substrate.
- the weight average molecular weight in terms of polystyrene by the GPC method of the silicone-based mold release agent (B1) is not particularly limited, but is preferably 300 to 50000, more preferably 400 to 10,000, and still more preferably 500 to 5000.
- the molecular weight is not less than the lower limit of the above range, the heat resistance of the release layer (I) tends to be sufficient.
- the molecular weight is not more than the upper limit of the above range, mixing of the polymer (A) and the silicone-based release agent (B1) is easy.
- the method for synthesizing the silicone release agent (B1) is not particularly limited. For example, by reacting a silicone resin having a SiH group with a vinyl compound having a functional group capable of forming a chemical bond by reacting with the polymer (A), the functional group is allowed to react with the silicone resin.
- the silicone release agent (B1) examples include a silicone compound having at least one structure selected from a diaryl silicone structure and a dialkyl silicone structure.
- the silicone mold release agent (B1) includes a formula (I), a formula (II) or a formula A silicone compound represented by (III), in which a group having a functional group capable of reacting with the polymer (A) to form a chemical bond is introduced into the side chain and / or terminal of the silicone skeleton, is preferable.
- a silicone compound in which a group having a functional group capable of forming a chemical bond by reacting with the polymer (A) is introduced into the polydimethylsiloxane skeleton is particularly preferable.
- each R 1 is independently an aryl group having 6 to 15 carbon atoms or an alkyl group having 1 to 30 carbon atoms.
- the aryl group is preferably an aryl group having 6 to 10 carbon atoms
- the alkyl group is preferably an alkyl group having 1 to 20 carbon atoms.
- R 1 is particularly preferably a methyl group.
- R 2 is a group having a functional group capable of reacting with the polymer (A) to form a chemical bond, and is, for example, a polyether-modified or alkyl-modified (meth) acryloyloxy group.
- m is a natural number and is a value in which the weight average molecular weight of the compound represented by the above formula falls within the above-described range.
- n is an integer of 1 or more, preferably 2 to 10, more preferably an integer of 2 to 8.
- n is an integer of 0 or more, preferably 0 to 8, more preferably an integer of 0 to 6.
- n is an integer of 0 or more, preferably 1 to 9, more preferably an integer of 1 to 7.
- the —Si (R 1 ) 2 O— unit and the —Si (R 1 ) (R 2 ) O— unit may be a random structure or a block structure. Also good.
- silicone release agents (B1) examples include X-22-164, X-22-164AS, X-22-164A, X-22-164B, and X-22 manufactured by Shin-Etsu Chemical Co., Ltd. Silicone compounds having methacryloyloxy groups at both ends, such as 164C, X-22-164E; methacryloyloxy at one end, such as X-22-174DX, X-22-2426, X-22-2475, manufactured by Shin-Etsu Chemical Co., Ltd.
- Silicone compounds having a group silicone compounds having an acryloyloxy group such as EBECRYL350 and EBECRYL1360 manufactured by Daicel Cytec; silicones having an acryloyloxy group such as AC-SQ TA-100 and AC-SQ SI-20 manufactured by Toagosei Co., Ltd. Compound: MAC-SQ TM-100, MAC manufactured by Toagosei Co., Ltd. Silicone compound having an SQ SI-20, a methacryloyloxy group, such as MAC-SQ HDM and the like.
- Tego Rad2100 penentafunctional reactive silicone having an alkyl-modified acryloyloxy group as a functional group
- Tego Rad2010 penentafunctional reaction having an acryloyloxy group as a functional group
- the fluorine-based mold release agent (B2) has a functional group that can react with the polymer (A) to form a chemical bond.
- the fluorine-based mold release agent (B2) includes, for example, at least one group selected from a fluorinated alkyl structure and a fluorinated alkenyl structure, and a functional group capable of forming a chemical bond by reacting with the polymer (A). The compound which has is mentioned.
- the fluorinated alkyl structure is, for example, a fluorinated alkyl group having 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms (a group in which one or more hydrogen atoms in the alkyl group are replaced by fluorine), and particularly preferably perfluoro It is an alkyl group.
- the fluorinated alkenyl structure is, for example, a fluorinated alkenyl group having 3 to 25 carbon atoms, preferably 5 to 20 carbon atoms (a group in which one or more hydrogen atoms in the alkenyl group are replaced by fluorine atoms), and particularly preferably a compound of the formula ( a perfluoroalkenyl group such as a group represented by b2-1) or (b2-2).
- the group represented by the formula (b2-1) or (b2-2) has low polymerization reactivity, and when the polymer (A) has a polymerizable double bond, the double bond It is not included in the functional group capable of reacting with and forming a chemical bond.
- fluorine-based release agent (B2) for example, a fluorine-based release agent having a fluorinated alkyl structure and a (meth) acryloyl group is preferable, and a compound represented by the formula (b2-3) is more preferable.
- R 1 is a hydrogen atom or a methyl group
- R 2 is a direct bond or an alkylene group having 1 to 20 carbon atoms
- R 3 is 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms. And is more preferably a perfluoroalkyl group.
- Examples of the compound represented by the formula (b2-3) include 2,2,3,3,3-pentafluoropropyl acrylate and 2- (perfluorobutylethyl) acrylate.
- Aliphatic release agent (B3) has a functional group that can react with the polymer (A) to form a chemical bond.
- Examples of the aliphatic release agent (B3) include a compound having an alkyl structure having 8 or more carbon atoms and a functional group capable of forming a chemical bond by reacting with the polymer (A).
- the alkyl structure is, for example, an alkyl group having 8 or more carbon atoms, preferably 8 to 40 carbon atoms, and specific examples include an octyl group, a decanyl group, a dodecyl group, and an octadecyl group.
- an aliphatic release agent having an alkyl structure having 8 or more carbon atoms and a (meth) acryloyl group is preferable, and a compound represented by the formula (b3-1) is more preferable. preferable.
- R 4 is a hydrogen atom or a methyl group
- R 5 is an alkyl group having 8 or more carbon atoms, preferably 8 to 40 carbon atoms.
- Examples of the compound represented by the formula (b3-1) include light ester L (n-lauryl methacrylate) and light ester S (n-stearyl methacrylate) manufactured by Kyoeisha Chemical Co., Ltd.
- the temporary fixing composition (I) of the present invention preferably further contains a thermoplastic resin (C).
- thermoplastic resin (C) include cycloolefin polymers, petroleum resins, novolak resins, and mixtures thereof.
- cycloolefin polymers are preferred.
- the layer containing a cycloolefin polymer is excellent in heat resistance and has high resistance to chemicals used in photofabrication. For this reason, when the work process in a high temperature environment exists in the processing of a base material, damage to members, such as base material itself and the bump formed in the base material, can be prevented.
- the content of the polymer (A) in the temporary fixing composition (I) of the present invention is preferably 1 to 50 mass with respect to 100 parts by mass of the resin (C). Part, more preferably 5 to 40 parts by weight, particularly preferably 10 to 30 parts by weight.
- the content of the thermoplastic resin (C) is within the above range, the temperature when the substrate is temporarily fixed on the support is lowered, and when the substrate is processed or moved, the support is changed from the support to the substrate. It is preferable in that it does not move by shifting.
- cycloolefin polymer that is a suitable example of the thermoplastic resin (C) include, for example, an addition copolymer of a cyclic olefin compound and an acyclic olefin compound, or one or more cyclic olefin compounds.
- examples thereof include a ring-opening metathesis polymer and a polymer obtained by hydrogenating the ring-opening metathesis polymer. Methods for synthesizing such cycloolefin polymers are conventionally known.
- cyclic olefin compounds include norbornene olefins, tetracyclododecene olefins, dicyclopentadiene olefins, and derivatives thereof.
- the derivatives include alkyl groups, alkylidene groups, aralkyl groups, cycloalkyl groups, hydroxy groups, alkoxy groups, acetyl groups, cyano groups, amide groups, imide groups, silyl groups, aromatic rings, ether bonds, and ester bonds.
- the substituted derivative which has 1 type, or 2 or more types chosen from is mentioned.
- the preferable carbon number of each group in the derivative is as follows.
- the number of carbon atoms in the alkyl group is preferably 1-20, more preferably 1-10.
- the number of carbon atoms of the alkylidene group is preferably 1-20, more preferably 1-10.
- the number of carbon atoms in the aralkyl group is preferably 7-30, more preferably 7-18.
- the carbon number of the cycloalkyl group is preferably 3 to 30, more preferably 3 to 18.
- the number of carbon atoms of the alkoxy group is preferably 1-10.
- a preferred example of the cyclic olefin compound is a compound represented by the formula (C1).
- R 1 to R 3 in the formula (C1) are as follows.
- R 1 and R 2 are each independently hydrogen or an alkyl group.
- R 3 is independently hydrogen, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an alkoxycarbonyl group, an aldehyde group, an acetyl group, or a nitrile group.
- two R ⁇ 3 > may couple
- the preferable carbon number of each group in the formula (C1) is as follows.
- the alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms.
- the carbon number of the cycloalkyl group is preferably 3 to 30, more preferably 3 to 18.
- the number of carbon atoms of the aryl group is preferably 6-18.
- the number of carbon atoms in the aralkyl group is preferably 7-30, more preferably 7-18.
- the number of carbon atoms of the alkoxy group is preferably 1-10.
- the number of carbon atoms of the alkoxycarbonyl group is preferably 2-11.
- acyclic olefin compound examples include linear or branched olefins having 2 to 20 carbon atoms, preferably 2 to 10 carbon atoms, more preferably ethylene, propylene and butene, and particularly preferably ethylene. .
- the addition copolymer of a cyclic olefin compound and an acyclic olefin compound includes, for example, a structural unit represented by the formula (CI) and a structural unit derived from the acyclic olefin compound (polymerization of an acyclic olefin). A structural unit based on the reaction of a heavy bond).
- R 1 to R 3 in formula (CI) have the same meanings as the same symbols in formula (C1).
- addition copolymers examples include “TOPAS (Topas)” manufactured by TOPAS ADVANCED POLYMERS, and “APEL (Appel)” manufactured by Mitsui Chemicals, Inc.
- ring-opening metathesis polymer and hydrogenated product thereof examples include a polymer having a structural unit represented by the formula (CII), and are obtained by hydrogenating the ring-opening metathesis polymer.
- the polymer to be obtained examples include a polymer having a structural unit represented by the formula (CIII).
- R 1 to R 3 in the formulas (CII) and (CIII) are synonymous with the same symbols in the formula (1).
- ring-opening metathesis polymers examples include “ZEONOR” and “ZEONEX” manufactured by Nippon Zeon Co., Ltd., and “ARTON” manufactured by JSR Corporation.
- the weight average molecular weight (Mw) in terms of polystyrene by the GPC method of the cycloolefin polymer is usually 10,000 to 100,000, preferably 30,000 to 100,000.
- Mn the number average molecular weight in terms of polystyrene by GPC method
- Mw / Mn the molecular weight distribution represented by Mw / Mn is usually 2 to 4, preferably 3 to 4.
- thermoplastic resin (C) examples include C5 petroleum resins, C9 petroleum resins, C5 / C9 mixed petroleum resins, cyclopentadiene resins, and vinyl substituted aromatic compounds.
- C5 petroleum resins C9 petroleum resins, C5 / C9 mixed petroleum resins, cyclopentadiene resins, polymers of vinyl-substituted aromatic compounds, hydrogenated products thereof, and mixtures thereof are preferable.
- the C5 petroleum resin an aliphatic resin is preferable
- the C9 petroleum resin an alicyclic resin is preferable.
- C9 petroleum resins, cyclopentadiene resins, hydrogenated products thereof, and mixtures thereof are particularly preferable.
- the weight average molecular weight (Mw) in terms of polystyrene by the GPC method of the petroleum resin is usually 20000 or less, preferably 100 to 20000, more preferably 200 to 10,000, and particularly preferably 300 to 5000.
- a novolak resin which is a suitable example of the thermoplastic resin (C) can be obtained, for example, by condensing phenols and aldehydes in the presence of a catalyst (eg, oxalic acid).
- a catalyst eg, oxalic acid
- phenols examples include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2, 3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethyl
- examples thereof include phenol, catechol, resorcinol, pyrogallol, ⁇ -naphthol, and ⁇ -naphthol.
- aldehydes examples include formaldehyde, paraformaldehyde, acetaldehyde, and benzaldehyde.
- the novolak resin include phenol / formaldehyde condensed novolak resin, cresol / formaldehyde condensed novolak resin, and phenol-naphthol / formaldehyde condensed novolak resin.
- the weight average molecular weight (Mw) in terms of polystyrene by GPC method of the novolak resin is usually 2000 or more, preferably 2000 to 20000.
- Mn the number average molecular weight of novolak resin in terms of polystyrene by GPC is Mn
- the molecular weight distribution represented by Mw / Mn is usually 1 to 10, preferably 1.5 to 5.
- Temporary fixing composition (II) The temporary fixing composition (II) substantially does not contain a release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond.
- the temporary fixing composition (II) preferably contains at least one resin selected from the thermoplastic resin (C) and the thermosetting resin (D), and preferably contains the thermoplastic resin (C). Is more preferable.
- the composition for temporary fixing (II) may further contain the polymer (A).
- the fact that the release agent (B) is substantially not included means that the content of the release agent (B) is 100 mass of the total solid content of the temporary fixing composition (II). It means that it is 0.0005 mass% or less normally with respect to%.
- the content of the release agent (B) is more preferably 0.0001% by mass or less, and particularly preferably 0% by mass.
- the content of the release agent (B) is usually 0.0005% by mass relative to the total mass of the adhesive layer (II).
- it is more preferably 0.0001% by mass or less, particularly preferably 0% by mass.
- the content of the thermoplastic resin (C) is preferably 10 to 100% by mass, more preferably 100% by mass with respect to 100% by mass of the total solid content of the temporary fixing composition (II). Is 30 to 95% by mass, more preferably 50 to 90% by mass.
- the content of the thermoplastic resin (C) is within the above range, the temperature when the substrate is temporarily fixed on the support is lowered, and when the substrate is processed or moved, the support is changed from the support to the substrate. It is preferable in that it does not move by shifting.
- the content of the thermosetting resin (D) is preferably 0 to 90% by mass with respect to 100% by mass of the total solid content of the temporary fixing composition (II). .
- the blending ratio of the polymer (A) to the thermoplastic resin (C) and / or the thermosetting resin (D) ((A) :( C) + (D); mass)
- the standard) is preferably 70:30 to 0: 100, more preferably 50:50 to 10:90.
- the temperature when the substrate is temporarily fixed on the support can be lowered. In terms of processing and moving the base material, this is preferable in that the base material is not displaced and moved from the support.
- Temporary fixing composition (I) It is as follows.
- thermosetting resin (D) examples include an epoxy resin.
- thermoplastic resins such as a twin screw extruder, A screw extruder, a continuous kneader, a roll kneader, a pressure kneader, or a Banbury mixer can be used.
- a solvent (E) may be used in that the viscosity of the composition is set in a range suitable for coating.
- the solvent (E) include xylene, limonene, mesitylene, dipentene, pinene, bicyclohexyl, cyclododecene, 1-tert-butyl-3,5-dimethylbenzene, butylcyclohexane, cyclooctane, cycloheptane, cyclohexane, and methylcyclohexane.
- Hydrocarbons such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, diglyme and other alcohols / ethers, ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, 3-ethoxypropion Esters such as ethyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, ⁇ -butyrolactone Ton class, cyclopentanone, cyclohexanone, methyl isobutyl ketone and 2-heptanone, amide / lactam such as N- methyl-2-pyrrolidinone.
- Hydrocarbons such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, diglyme and other alcohols /
- the total concentration of all components other than the solvent (E) in the temporary fixing compositions (I) and (II) is usually 5 to 70% by mass, more preferably 15 to 50% by mass. It can be used in the range.
- the temporary fixing compositions (I) and (II) may be prepared from metal oxide particles such as aluminum oxide, zirconium oxide, titanium oxide, and silicon oxide, an antioxidant, a polymerization inhibitor, and an ultraviolet absorber, if necessary.
- Adhesion aids, polystyrene cross-linked particles may be contained.
- the temporary fixing composition (I) is obtained by reacting the polymer (A) with the release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond.
- the release agent (B) having a functional group capable of reacting with the polymer (A) to form a chemical bond In order to accelerate
- the substrate treatment method of the present invention includes ⁇ 1> a step of obtaining a laminate by temporarily fixing a substrate on a support via the temporary fixing material, ⁇ 2> the base Processing the material and / or moving the laminate, and ⁇ 3> peeling the substrate from the support, and if necessary, ⁇ 4> on the peeled substrate. A step of removing the remaining temporary fixing material;
- step ⁇ 1> to step ⁇ 4>.
- step ⁇ 1> for example, (1-1) the temporary fixing material is formed on the surface of the support and / or the base material, and the base material and the support are bonded to each other through the temporary fixing material.
- the substrate can be temporarily fixed on the support.
- the base material may be surface-treated as necessary.
- Examples of the method for forming the temporary fixing material include, for example, (i) a method in which each layer of the temporary fixing material is directly formed on the support and / or the substrate, and (ii) each layer of the temporary fixing material is released from the mold.
- Examples thereof include a method of forming a film with a certain thickness on a treated film such as a polyethylene terephthalate film and then transferring the film to a support and / or a substrate by a laminating method. From the viewpoint of film thickness uniformity, the method (i) is preferred.
- Examples of the method for applying the temporary fixing composition for forming each layer of the temporary fixing material include a spin coating method and an ink jet method.
- the spin coating method for example, for temporary fixing under the conditions that the rotation speed is 300 to 3,500 rpm, preferably 500 to 1,500 rpm, the acceleration is 500 to 15,000 rpm / second, and the rotation time is 30 to 300 seconds.
- the method of spin-coating a composition is mentioned.
- the solvent can be evaporated by heating with a hot plate or the like, for example.
- the heating conditions are, for example, a temperature of usually 150 to 275 ° C., preferably 150 to 260 ° C., and a time of usually 2 to 15 minutes, more preferably 3 to 15 minutes.
- the heating conditions for forming the release layer (I) are more preferably 150 to 250 ° C. from the viewpoint of efficiently promoting the reaction between the polymer (A) and the release agent (B). .
- a release layer (I) is formed on the substrate, and an adhesive layer (II) is formed on the support, A method of bonding them so that the release layer (I) and the adhesive layer (II) are in contact with each other; forming the release layer (I) and the adhesive layer (II) on the substrate, and forming the adhesive layer (II) on the adhesive layer (II)
- the temperature at this time is appropriately selected according to the components contained in the temporary fixing composition, the coating method, and the like.
- the pressure-bonding condition between the substrate and the support may be performed, for example, by applying a pressure of 0.01 to 5 MPa at 150 to 300 ° C. for 1 to 5 minutes.
- Examples of the base material that is an object to be processed (moved) include a semiconductor wafer, a glass substrate, a resin substrate, a metal substrate, a metal foil, a polishing pad, and a resin coating film.
- a semiconductor wafer is usually formed with bumps, wirings, insulating films, and the like.
- Examples of the resin coating include a layer containing an organic component as a main component; specifically, a photosensitive resin layer formed from a photosensitive material, an insulating resin layer formed from an insulating material, Examples thereof include a photosensitive insulating resin layer formed from a photosensitive insulating resin material.
- Examples of the support include a glass substrate, a silicon wafer, and the like that are easy to handle and have a hard and flat surface.
- the surface of the substrate can be surface-treated in advance in order to make the temporary fixing material spread in the plane.
- the surface treatment method include a method of previously applying a surface treatment agent to the surface of the substrate.
- Examples of the surface treatment agent include 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminopropyltrimethoxysilane, 2-aminopropyltriethoxysilane, N- (2-aminoethyl)- 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N-ethoxycarbonyl-3-aminopropyl Trimethoxysilane, N-ethoxycarbonyl-3-aminopropyltriethoxysilane, N-triethoxysilylpropyltriethylenetriamine, N-trimethoxysilylpropyltriethylenetriamine, 10-trimethoxysilyl-1,4,7 Triazade
- Step ⁇ 2> is a step of processing the substrate temporarily fixed on the support as described above and / or moving the obtained laminate.
- the moving process is a process of moving a substrate such as a semiconductor wafer together with a support from one apparatus to another apparatus.
- Examples of the processing of the substrate temporarily fixed on the support as described above include, for example, dicing; thinning of the substrate such as back grinding; etching processing, formation of a sputtered film, plating processing, and plating reflow.
- Examples include photofabrication including one or more processes selected from the processes.
- the processing of the base material is not particularly limited as long as it is performed at a temperature at which the holding force of the temporarily fixed material is not lost.
- the substrate is peeled from the support by applying a force to the substrate or the support.
- a force is applied to a substrate or a support in a direction parallel to the substrate surface to separate them; one of the substrate or the support is fixed and the other is parallel to the substrate surface
- a force in a direction substantially perpendicular to the substrate surface means usually in the range of 0 ° to 60 °, preferably 0 ° to the z-axis, which is an axis perpendicular to the substrate surface. Applying a force in the range of 45 °, more preferably in the range of 0 ° to 30 °, even more preferably in the range of 0 ° to 5 °, even more preferably 0 °, ie perpendicular to the substrate surface. means.
- a pressure of 0.0001 to 100 MPa, preferably 0.001 to 30 MPa, more preferably 0.005 to 1 MPa is applied in a direction substantially perpendicular to the substrate surface, and the substrate or The method of peeling a support body is mentioned.
- the peeling method for example, the base material or the support is lifted up (a part or all of the peripheral edge is peeled off from the temporary fixing material), and a force is applied in a direction substantially perpendicular to the base material surface. Or it can carry out with the method (hook pull system) which peels in order toward the center from the periphery of a support body.
- a base material and a support body can be peeled with such peeling force and peeling method.
- the peeling of the substrate or the support can be usually performed at 5 to 100 ° C., preferably 10 to 45 ° C., more preferably 15 to 30 ° C.
- the temperature here means the temperature of the support.
- a reinforcing tape for example, a commercially available dicing tape, can be applied to the surface of the base material opposite to the temporary fixing surface with the support, and the base material can be peeled off.
- the temporary fixing material has the release layer (I) and the adhesive layer (II), and peeling occurs mainly in the release layer (I). There are few residues derived from wood. For this reason, even if the residue derived from the temporary fixing material exists on the substrate, the residue can be removed in a short time using the solvent.
- the temporarily fixing material remains on the substrate after peeling, it can be removed by washing with a solvent.
- the cleaning method include a method of immersing the substrate in the cleaning solution, a method of spraying the cleaning solution on the substrate, and a method of applying ultrasonic waves while immersing the substrate in the cleaning solution.
- the temperature of the cleaning liquid is not particularly limited, but is preferably 10 to 80 ° C., more preferably 20 to 50 ° C.
- solvent examples include carbonization such as xylene, limonene, mesitylene, dipentene, pinene, bicyclohexyl, cyclododecene, 1-tert-butyl-3,5-dimethylbenzene, butylcyclohexane, cyclooctane, cycloheptane, cyclohexane, and methylcyclohexane.
- alcohol / ethers such as diglyme, ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxy
- the substrate can be peeled from the support.
- the semiconductor device of the present invention is obtained by the substrate processing method of the present invention. Since the temporary fixing material is easily removed when the semiconductor device (e.g., semiconductor element) is peeled off, the semiconductor device is greatly reduced in contamination (e.g., stains and burns) due to the temporary fixing material. .
- the weight average molecular weight (Mw) and number average molecular weight (Mn) of the polymer or resin are, for example, using GPC columns (2 G2000HXL, 1 G3000HXL, 1 G4000HXL) manufactured by Tosoh Corporation in terms of polystyrene.
- the measurement was performed using a measuring apparatus “HLC-8220-GPC” (manufactured by Tosoh Corporation).
- Example 1A 100 parts cycloolefin polymer (trade name “ARTON R5300”, manufactured by JSR Corporation), 20 parts liquid styrene-butadiene rubber (trade name “RICON 100”, manufactured by SARTOMER), and 0.1 part acrylate Modified polysiloxane (trade name “Tego Rad2010”, manufactured by Evonik Degussa Japan Co., Ltd.) and 300 parts of xylene were mixed at 25 ° C. to prepare a temporary fixing composition of Example 1A.
- cycloolefin polymer trade name “ARTON R5300”, manufactured by JSR Corporation
- 20 parts liquid styrene-butadiene rubber trade name “RICON 100”, manufactured by SARTOMER
- 0.1 part acrylate Modified polysiloxane trade name “Tego Rad2010”, manufactured by Evonik Degussa Japan Co., Ltd.
- Example 1A the temporary fixing compositions 2 to 8 of Examples 2A to 5A and Preparation Examples 1A to 3A were changed in the same manner as Example 1A, except that the ingredients were changed as shown in Table 1. Prepared.
- a compound having a dialkyl silicone structure and a polyoxyalkylene structure BR2: Fluorine-based resin (trade name “Factent 209F”, manufactured by Neos Co., Ltd., does not have a functional group capable of forming a chemical bond by reacting with a polymerizable double bond contained in the polymer (A1), Compound having hexafluoropropene structure and polyoxyalkylene structure)
- Thermoplastic resin (C) AR1 Trade name “ARTON R5300”, manufactured by JSR Corporation AR2: Trade name “ZEONEX 480R”, manufactured by Nippon Zeon Co., Ltd.
- Example 1B A temporary fixing composition 1 is applied onto a 4-inch silicon wafer (base material) provided with a plurality of bumps by a spin coating method, and heated at 160 ° C. for 5 minutes in the air using a hot plate, and then Then, the substrate was heated at 230 ° C. for 10 minutes in a nitrogen atmosphere to obtain a substrate having a 10 ⁇ m thick coating film (release layer). The obtained substrate was cut into a length of 2 cm and a width of 2 cm to obtain a substrate 1A having a release layer.
- the bump has a size of 10 ⁇ m in length, 10 ⁇ m in width, and 5 ⁇ m in height.
- the lower half of the silicon wafer side is a pillar portion made of copper, and the upper half has a solder portion made of Sn—Ag alloy.
- the temporary fixing composition 6 was applied onto a 4-inch silicon wafer (support) by a spin coating method, heated at 160 ° C. for 5 minutes in the air using a hot plate, and then in a nitrogen atmosphere, The substrate was heated at 230 ° C. for 10 minutes to obtain a substrate having a coating film (adhesive layer) having a thickness of 40 ⁇ m. The obtained substrate was cut into a length of 1.5 cm and a width of 1.5 cm to obtain a substrate 1B having an adhesive layer.
- substrate 1A and substrate 1B are bonded together so that the release layer and the adhesive layer are in contact with each other, and using a die bonder device, a pressure of 0.02 MPa is applied at 180 ° C. for 60 seconds, and a silicon wafer (base material) And a silicon wafer (support) were temporarily fixed via a temporary fixing material composed of a release layer and an adhesive layer.
- a universal bond tester (trade name “Daily 4000”, manufactured by Daisy) was used to apply a shearing force (at a speed of 500 ⁇ m / second, 23 ° C.) in a direction parallel to the substrate surface. However, it was confirmed that the silicon wafer (base material) and the silicon wafer (support) were held (temporarily fixed) without being displaced.
- Example 1B was the same as Example 1B except that the temporary fixing composition was changed as shown in Table 2. The results are shown in Table 2.
- the migration test of Comparative Examples 1B to 2B was performed on a sample that could be peeled without residue in the peelability test.
- the temporary fixing material adhering to the silicon wafer (support) was 0 square out of 100 squares, so that the release agent in the release layer was transferred to the adhesive layer. it is conceivable that.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Laminated Bodies (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
本発明の積層体は、支持体上に仮固定材を介して基材が仮固定された積層体であり、前記仮固定材が、前記基材における支持体側の面と接した仮固定材層(I)と、前記層(I)における支持体側の面上に形成された仮固定材層(II)とを有する。
離型層(I)は、例えば、重合体(A)と、前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)とを含有する本発明の仮固定用組成物(I)を用いて形成することができる。接着層(II)は、例えば、前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)を実質的に含有しない仮固定用組成物(II)を用いて形成することができる。
本発明の仮固定用組成物(I)は、重合体(A)と、前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)とを含有する。より好適には、本発明の仮固定用組成物(I)は、官能基を有する重合体(A)と、前記重合体(A)が有する官能基と反応して化学結合を形成可能な官能基を有する離型剤(B)とを含有する。また、仮固定用組成物(I)は、離型剤(B)とは前記反応により化学結合を形成しない熱可塑性樹脂(C)を含有してもよい。
重合体(A)としては、例えば、加熱および/または光照射により離型剤(B)が有する官能基と反応して化学結合を形成可能な官能基を有する重合体(ただし、離型剤(B)に該当する重合体を除く)であれば特に限定されない。例えば、ゴム、アクリル系樹脂、ビニルアルキルエーテル系樹脂、ポリエステル系樹脂、ポリシロキサン系樹脂、ポリアミド系樹脂、ウレタン系樹脂などであって、前記官能基を有する重合体が挙げられる。
本発明において、離型剤(B)を含有する仮固定用組成物(I)を塗布して、乾燥させるまでの間に、離型剤(B)が被膜表面に移行して、被膜内部よりも被膜表面に多く存在することになり、これにより、前記被膜に離型性が付与される。
シリコーン系離型剤(B1)は、重合体(A)と反応して化学結合を形成可能な官能基を有する。シリコーン系離型剤(B1)は、重合体(A)と反応して化学結合を形成可能な官能基を有することから、離型層(I)中に良好に取り込まれることができ、接着層(II)等の他の層への前記(B1)の移行を防止でき、かつ前記(B1)による基材の汚染も防止できる。また、耐熱性に優れることから、例えば200℃以上の高温加工処理を経ても離型層(I)の焦げ付きを防止することができる。
フッ素系離型剤(B2)は、重合体(A)と反応して化学結合を形成可能な官能基を有する。フッ素系離型剤(B2)は、例えば、フッ素化アルキル構造およびフッ素化アルケニル構造から選ばれる少なくとも1種の基と、重合体(A)と反応して化学結合を形成可能な官能基とを有する化合物が挙げられる。
脂肪族系離型剤(B1)は、重合体(A)と反応して化学結合を形成可能な官能基を有する。脂肪族系離型剤(B3)は、例えば、炭素数8以上のアルキル構造と、重合体(A)と反応して化学結合を形成可能な官能基とを有する化合物が挙げられる。アルキル構造は、例えば、炭素数8以上、好ましくは8~40のアルキル基であり、具体的には、オクチル基、デカニル基、ドデシル基、オクタデシル基が挙げられる。
本発明の仮固定用組成物(I)は、さらに熱可塑性樹脂(C)を含有することが好ましい。熱可塑性樹脂(C)としては、例えば、シクロオレフィン系重合体、石油樹脂、ノボラック樹脂、およびこれらの混合物が挙げられる。
熱可塑性樹脂(C)の好適例であるシクロオレフィン系重合体としては、例えば、環状オレフィン系化合物と非環状オレフィン系化合物との付加共重合体、1種または2種以上の環状オレフィン系化合物の開環メタセシス重合体、前記開環メタセシス重合体を水素化して得られる重合体が挙げられる。このようなシクロオレフィン系重合体の合成方法は従来公知である。
環状オレフィン系化合物と非環状オレフィン系化合物との付加共重合体は、例えば、式(CI)で表される構成単位と、非環状オレフィン系化合物に由来する構成単位(非環状オレフィンの重合性二重結合の反応に基づく構成単位)とを有する重合体である。
1種または2種以上の環状オレフィン系化合物の開環メタセシス重合体は、例えば、式(CII)で表される構成単位を有する重合体が挙げられ、前記開環メタセシス重合体を水素化して得られる重合体は、例えば、式(CIII)で表される構成単位を有する重合体が挙げられる。
熱可塑性樹脂(C)の好適例である石油樹脂としては、例えば、C5系石油樹脂、C9系石油樹脂、C5系/C9系混合石油樹脂、シクロペンタジエン系樹脂、ビニル置換芳香族化合物の重合体、オレフィンとビニル置換芳香族化合物との共重合体、シクロペンタジエン系化合物とビニル置換芳香族化合物との共重合体、これらの水素添加物、およびこれらの混合物が挙げられる。これらの中でも、C5系石油樹脂、C9系石油樹脂、C5系/C9系混合石油樹脂、シクロペンタジエン系樹脂、ビニル置換芳香族化合物の重合体、これらの水素添加物、およびこれらの混合物が好ましい。C5系石油樹脂としては脂肪族系樹脂が好ましく、C9系石油樹脂としては脂環族系樹脂が好ましい。これらの中でも、C9系石油樹脂、シクロペンタジエン系樹脂、これらの水素添加物、およびこれらの混合物が特に好ましい。
熱可塑性樹脂(C)の好適例であるノボラック樹脂は、例えば、フェノール類とアルデヒド類とを触媒(例:シュウ酸)の存在下で縮合させることにより得ることができる。
仮固定用組成物(II)は、重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)を実質的に含有しない。仮固定用組成物(II)は、少なくとも熱可塑性樹脂(C)および熱硬化性樹脂(D)から選ばれる少なくとも1種の樹脂を含有することが好ましく、熱可塑性樹脂(C)を含有することがより好ましい。また、仮固定用組成物(II)は、重合体(A)をさらに含有していてもよい。
仮固定用組成物(I)および(II)の調製には、熱可塑性樹脂の加工に用いる公知の装置、例えば、二軸押出機、単軸押出機、連続ニーダー、ロール混練機、加圧ニーダー、バンバリーミキサーを用いることができる。
本発明の基材の処理方法は、〈1〉支持体上に基材を、上記仮固定材を介して仮固定することにより、積層体を得る工程、〈2〉前記基材を加工し、および/または前記積層体を移動する工程、ならびに〈3〉前記支持体から前記基材を剥離する工程を有し、必要に応じて、〈4〉剥離後の基材上に残存する仮固定材を除去する工程を有する。
工程〈1〉では、例えば、(1-1)支持体および/または基材の表面に、上記仮固定材を形成し、前記仮固定材を介して基材と支持体とを貼り合せることにより、基材を支持体上に仮固定することができる。また、(1-2)支持体の表面に、上記仮固定材を形成し、前記仮固定材上に樹脂塗膜等の基材を形成することにより、基材を支持体上に仮固定することもできる。基材は、必要に応じて表面処理されていてもよい。
工程〈2〉は、上記のように支持体上に仮固定された基材を加工し、および/または得られた積層体を移動する工程である。移動工程は、半導体ウエハ等の基材を、ある装置から別の装置へ支持体とともに移動する工程である。また、上記のようにして支持体上に仮固定された基材の加工処理としては、例えば、ダイシング;裏面研削等の基材の薄膜化;エッチング加工、スパッタ膜の形成、メッキ処理およびメッキリフロー処理から選ばれる一以上の処理を含むフォトファブリケーションが挙げられる。
基材の加工処理または移動処理後は、基材または支持体に力を付加することで、前記支持体から前記基材を剥離する。例えば、基材面に対して平行方向に基材または支持体に力を付加して両者を分離する方法;基材または支持体の一方を固定し、他方を基材面に対して平行方向から一定の角度を付けて持ち上げることで両者を分離する方法が挙げられる。仮固定材の離型層(I)での剥離が良好に起こること、室温程度での剥離が可能であることから、後者の方法が好ましい。
このため、基材上に仮固定材由来の残渣が存在しても、溶剤を用いて短時間で残渣を除去することができる。
剥離後の基材上に仮固定材が残存している場合は、溶剤で洗浄して除去することができる。洗浄方法としては、例えば、基材を洗浄液に浸漬する方法、基材に洗浄液をスプレーする方法、基材を洗浄液に浸漬しながら超音波を加える方法が挙げられる。洗浄液の温度は特に限定されないが、好ましくは10~80℃、より好ましくは20~50℃である。
本発明の半導体装置は、本発明の基材の処理方法によって得られる。上記仮固定材は、半導体装置(例:半導体素子)の剥離時に容易に除去されるため、前記半導体装置は仮固定材による汚染(例:シミ、焦げ)が極めて低減されたものとなっている。
100部のシクロオレフィン重合体(商品名「ARTON R5300」、JSR(株)製)と、20部の液状スチレン-ブタジエンゴム(商品名「RICON100」、SARTOMER社製)と、0.1部のアクリレート変性ポリシロキサン(商品名「Tego Rad2010」、エボニックデグサジャパン(株)製)と、300部のキシレンとを25℃で混合して、実施例1Aの仮固定用組成物を調製した。
実施例1Aにおいて、配合成分を表1に記載のとおりに変更したこと以外は実施例1Aと同様にして、実施例2A~5Aおよび調製例1A~3Aの仮固定用組成物2~8をそれぞれ調製した。
A1:液状スチレン-ブタジエンゴム(商品名「RICON100」、SARTOMER社製、数平均分子量=4500、スチレン含量=25質量%、ブタジエン部分のビニル結合含量=70%)
A2:液状スチレン-ブタジエンゴム(商品名「RICON181」、SARTOMER社製、数平均分子量=3200、スチレン含量=28質量%、ブタジエン部分のビニル結合含量=30%)
A3:液状スチレン-ブタジエンゴム(商品名「L-SBR-820」、クラレ(株)製、エチレン性不飽和二重結合を有する樹脂、数平均分子量=8500)
離型剤(B)
B1-1:アクリレート変性ポリシロキサン(商品名「Tego Rad2010」、エボニックデグサジャパン(株)製、アクリロイルオキシ基を有する5官能の反応性シリコーン)
B1-2:アクリレート変性ポリシロキサン(商品名「Tego Rad2100」、エボニックデグサジャパン(株)製、アルキル変性アクリロイルオキシ基を有する5官能の反応性シリコーン)
BR1:ポリエーテル変性ポリシロキサン(商品名「Tego Wet270」、エボニックデグサジャパン(株)製、重合体(A1)に含まれる重合性二重結合と反応して化学結合を形成可能な官能基を有さず、ジアルキルシリコーン構造とポリオキシアルキレン構造とを有する化合物)
BR2:フッ素系樹脂(商品名「フタージェント209F」、ネオス(株)製、重合体(A1)に含まれる重合性二重結合と反応して化学結合を形成可能な官能基を有さず、ヘキサフルオロプロペン構造とポリオキシアルキレン構造とを有する化合物)
熱可塑性樹脂(C)
AR1:商品名「ARTON R5300」、JSR(株)製
AR2:商品名「ZEONEX 480R」、日本ゼオン(株)製
[実施例1B]
複数のバンプが設けられた4インチシリコンウエハ(基材)上に、仮固定用組成物1をスピンコート法により塗布し、ホットプレートを用いて、大気下、160℃で5分間加熱し、次いで、窒素雰囲気下、230℃で10分間加熱し、厚さ10μmの塗膜(離型層)を有する基板を得た。得られた基板を縦2cm、横2cmに切断し、離型層を有する基板1Aを得た。
次いで、剥離性試験を行った。万能ボンドテスター(商品名「デイジ4000」、デイジ社製)を用いて、基材面に対して垂直な軸(z軸)方向にフックプル方式(z軸に対して0°)で力(500μm/秒の速度、23℃)を加えた。その結果、0.2MPa未満の圧力で、シリコンウエハ(支持体)からシリコンウエハ(基材)を剥離することができた。剥離後のシリコンウエハ(基材)上の仮固定材残渣はなく、シリコンウエハ(基材)と離型層との界面で剥離を行えたことがわかった。また、バンプの状態を目視にて観察した。その結果、バンプには変形がなく、良好に剥離を行えたことがわかった。この剥離性試験を10回行い、10回のうち、シリコンウエハ(基材)上に仮固定材の残渣なく剥離を行えた回数を評価結果として表2に示す。
次いで、移行性試験を行った。剥離後のシリコンウエハ(支持体)上にある仮固定材と、シリコンウエハ(支持体)との付着性について、JIS K5600-5-6に従い評価した。シリコンウエハ(支持体)上にある仮固定材がシリコンウエハ(支持体)に100マス中100マス付着していることから、離型層中の離型剤は接着層に移行していないものと考えられる。
実施例1Bにおいて、表2に記載のとおりに仮固定用組成物を変更したこと以外は実施例1Bと同様にした。結果を表2に示す。なお、比較例1B~2Bの移行性試験は、剥離性試験において、残渣なく剥離を行えたものに対して行った。比較例1B~2Bの移行性試験では、シリコンウエハ(支持体)に付着した仮固定材が100マス中0マスであったことから、離型層中の離型剤は接着層に移行したものと考えられる。
10・・・支持体
20・・・仮固定材
21・・・接着層(II)
22・・・離型層(I)
30・・・基材
31・・・バンプ
101,102・・・仮固定材由来の残渣
Claims (10)
- 支持体上に仮固定材を介して基材が仮固定された積層体であり、
前記仮固定材が、
前記基材における支持体側の面と接した仮固定材層(I)と、
前記層(I)における支持体側の面上に形成された仮固定材層(II)と
を有し、
仮固定材層(I)が、重合体(A)と、前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)とを含有する仮固定用組成物から形成されてなる
ことを特徴とする積層体。 - 前記離型剤(B)が、シリコーン系離型剤(B1)、フッ素系離型剤(B2)、および脂肪族系離型剤(B3)から選ばれる少なくとも1種である、請求項1の積層体。
- 前記離型剤(B)が、ジアリールシリコーン構造、ジアルキルシリコーン構造、フッ素化アルキル構造、フッ素化アルケニル構造および炭素数8以上のアルキル構造から選ばれる少なくとも1種の構造と、前記重合体(A)と反応して化学結合を形成可能な官能基とを有する、請求項1または2の積層体。
- 前記離型剤(B)が有する、前記重合体(A)と反応して化学結合を形成可能な官能基が、重合性二重結合を有する基である、請求項1~3のいずれか1項の積層体。
- 前記重合体(A)が、重合性二重結合を有するジエン系重合体、重合性二重結合を有する(メタ)アクリル酸アルキルエステル系重合体、および重合性二重結合を有するポリシロキサンから選ばれる少なくとも1種である、請求項4の積層体。
- 前記仮固定材層(II)が、熱可塑性樹脂(C)および熱硬化性樹脂(D)から選ばれる少なくとも1種の樹脂を含有し、前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)を実質的に含有しない仮固定用組成物から形成されてなる、請求項1~5のいずれか1項の積層体。
- 〈1〉支持体上に基材を、前記基材における支持体側の面と接した仮固定材層(I)と、前記層(I)における支持体側の面上に形成された仮固定材層(II)とを有し、仮固定材層(I)が、重合体(A)と、前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤(B)とを含有する仮固定用組成物から形成されてなる仮固定材を介して、仮固定することにより、積層体を得る工程;
〈2〉前記基材を加工し、および/または前記積層体を移動する工程;ならびに
〈3〉前記支持体から前記基材を剥離する工程
を有することを特徴とする、基材の処理方法。 - (A)重合体と、
(B)前記重合体(A)と反応して化学結合を形成可能な官能基を有する離型剤と
を含有することを特徴とする仮固定用組成物。 - 前記離型剤(B)が、ジアリールシリコーン構造、ジアルキルシリコーン構造、フッ素化アルキル構造、フッ素化アルケニル構造および炭素数8以上のアルキル構造から選ばれる少なくとも1種の構造と、前記重合体(A)と反応して化学結合を形成可能な官能基とを有する、請求項8の仮固定用組成物。
- 請求項7の基材の処理方法により得られる半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/038,738 US10086583B2 (en) | 2013-11-26 | 2014-10-30 | Stack, method for treating substrate material, temporary fixing composition, and semiconductor device |
KR1020167013714A KR102204589B1 (ko) | 2013-11-26 | 2014-10-30 | 적층체, 기재의 처리 방법, 가고정용 조성물 및 반도체 장치 |
JP2015550621A JP6256478B2 (ja) | 2013-11-26 | 2014-10-30 | 積層体、基材の処理方法、仮固定用組成物および半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-243800 | 2013-11-26 | ||
JP2013243800 | 2013-11-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015079863A1 true WO2015079863A1 (ja) | 2015-06-04 |
Family
ID=53198811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/078908 WO2015079863A1 (ja) | 2013-11-26 | 2014-10-30 | 積層体、基材の処理方法、仮固定用組成物および半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10086583B2 (ja) |
JP (1) | JP6256478B2 (ja) |
KR (1) | KR102204589B1 (ja) |
WO (1) | WO2015079863A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015190479A1 (ja) * | 2014-06-13 | 2015-12-17 | 富士フイルム株式会社 | 仮接着用積層体、仮接着用積層体の製造方法およびデバイスウェハ付き積層体 |
JP2017092138A (ja) * | 2015-11-05 | 2017-05-25 | Jsr株式会社 | 基材の処理方法、積層体、半導体装置およびその製造方法、ならびに仮固定用組成物 |
JPWO2017191815A1 (ja) * | 2016-05-02 | 2018-11-08 | 日立化成株式会社 | 仮固定用樹脂フィルム |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6023737B2 (ja) * | 2014-03-18 | 2016-11-09 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01168996A (ja) * | 1987-12-24 | 1989-07-04 | Goyo Shiko Kk | 剥離剤及び剥離紙の製造方法 |
JP2013222761A (ja) * | 2012-04-13 | 2013-10-28 | Shin Etsu Chem Co Ltd | ウエハ加工体、支持体の再生方法及びウエハ加工用仮接着材 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5846060B2 (ja) | 2011-07-27 | 2016-01-20 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP5958262B2 (ja) | 2011-10-28 | 2016-07-27 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP5687230B2 (ja) | 2012-02-28 | 2015-03-18 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP5767159B2 (ja) | 2012-04-27 | 2015-08-19 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
US8999817B2 (en) | 2012-02-28 | 2015-04-07 | Shin-Etsu Chemical Co., Ltd. | Wafer process body, wafer processing member, wafer processing temporary adhesive material, and method for manufacturing thin wafer |
JP5767161B2 (ja) * | 2012-05-08 | 2015-08-19 | 信越化学工業株式会社 | ウエハ加工用仮接着材、それを用いたウエハ加工用部材、ウエハ加工体、及び薄型ウエハの作製方法 |
-
2014
- 2014-10-30 JP JP2015550621A patent/JP6256478B2/ja active Active
- 2014-10-30 US US15/038,738 patent/US10086583B2/en active Active
- 2014-10-30 WO PCT/JP2014/078908 patent/WO2015079863A1/ja active Application Filing
- 2014-10-30 KR KR1020167013714A patent/KR102204589B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01168996A (ja) * | 1987-12-24 | 1989-07-04 | Goyo Shiko Kk | 剥離剤及び剥離紙の製造方法 |
JP2013222761A (ja) * | 2012-04-13 | 2013-10-28 | Shin Etsu Chem Co Ltd | ウエハ加工体、支持体の再生方法及びウエハ加工用仮接着材 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015190479A1 (ja) * | 2014-06-13 | 2015-12-17 | 富士フイルム株式会社 | 仮接着用積層体、仮接着用積層体の製造方法およびデバイスウェハ付き積層体 |
JPWO2015190479A1 (ja) * | 2014-06-13 | 2017-06-08 | 富士フイルム株式会社 | 仮接着用積層体、仮接着用積層体の製造方法およびデバイスウェハ付き積層体 |
JP2017092138A (ja) * | 2015-11-05 | 2017-05-25 | Jsr株式会社 | 基材の処理方法、積層体、半導体装置およびその製造方法、ならびに仮固定用組成物 |
JPWO2017191815A1 (ja) * | 2016-05-02 | 2018-11-08 | 日立化成株式会社 | 仮固定用樹脂フィルム |
Also Published As
Publication number | Publication date |
---|---|
JPWO2015079863A1 (ja) | 2017-03-16 |
KR20160090819A (ko) | 2016-08-01 |
US20160375652A1 (en) | 2016-12-29 |
US10086583B2 (en) | 2018-10-02 |
JP6256478B2 (ja) | 2018-01-10 |
KR102204589B1 (ko) | 2021-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5348341B1 (ja) | 基材の処理方法、仮固定用組成物および半導体装置 | |
US9263333B2 (en) | Wafer processing laminate, wafer processing member, temporary adhering material for processing wafer, and manufacturing method of thin wafer | |
JP6589766B2 (ja) | ウエハ加工用接着材、ウエハ積層体及び薄型ウエハの製造方法 | |
JP6023737B2 (ja) | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 | |
JP6060479B2 (ja) | 基材の処理方法、半導体装置および仮固定用組成物 | |
JP6325432B2 (ja) | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 | |
JP5360260B2 (ja) | 基材の処理方法、積層体および半導体装置 | |
JP6156443B2 (ja) | 積層体および基材の処理方法 | |
JP6443241B2 (ja) | ウエハ加工用仮接着材、ウエハ加工体、及び薄型ウエハの製造方法 | |
TWI693158B (zh) | 層合體之製造方法及支撐體分離方法 | |
JP6588404B2 (ja) | 仮接着方法及び薄型ウエハの製造方法 | |
KR20150122068A (ko) | 접착제 조성물, 적층체 및 박리 방법 | |
JP5861304B2 (ja) | 基材の処理方法、半導体装置および仮固定用組成物 | |
JP6256478B2 (ja) | 積層体、基材の処理方法、仮固定用組成物および半導体装置 | |
JP2023052354A (ja) | 基板加工用仮接着材料及び積層体の製造方法 | |
JP2017092138A (ja) | 基材の処理方法、積層体、半導体装置およびその製造方法、ならびに仮固定用組成物 | |
JP6103817B2 (ja) | 基材の処理方法、積層体、仮固定材、仮固定用組成物および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14866102 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2015550621 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20167013714 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15038738 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14866102 Country of ref document: EP Kind code of ref document: A1 |