WO2015070485A1 - 基于有机p-n结的紫外探测器件及使用该器件的紫外图像探测器 - Google Patents

基于有机p-n结的紫外探测器件及使用该器件的紫外图像探测器 Download PDF

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WO2015070485A1
WO2015070485A1 PCT/CN2013/087884 CN2013087884W WO2015070485A1 WO 2015070485 A1 WO2015070485 A1 WO 2015070485A1 CN 2013087884 W CN2013087884 W CN 2013087884W WO 2015070485 A1 WO2015070485 A1 WO 2015070485A1
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organic
ultraviolet
glass substrate
disposed
junction
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French (fr)
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刘亚伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • UV detectors for organic P -11 junctions and UV image detection using the device UV detector element of p-n junction and ultraviolet image detector background using the same;
  • a solid substance can be used as a sensitive component for ultraviolet detection, such as silicon carbide (SiC) or aluminum nitrate ( ⁇ ( ⁇ 0 3 ) 3 ).
  • SiC silicon carbide
  • ⁇ ( ⁇ 0 3 ) 3 aluminum nitrate
  • the sensitive components can be divided into: explosion-proof and intrinsically safe. The use of these sensitive components are: 1 exploration, production, storage and unloading of oil and natural gas; 2 automobile, aircraft manufacturing, paint spray room; 3 explosives, munitions; 4 pharmaceutical industry; 5 waste incineration; Production, storage, transportation, etc. of industrial dyes.
  • Ultraviolet detection technology has a wide range of applications in medicine and biology, especially in recent years. It has a unique application effect in the diagnosis of skin diseases. Ultraviolet detection technology can directly detect the details of lesions when detecting and diagnosing skin diseases. It can also be used to detect cancer cells, microorganisms, hemoglobin, red blood cells, white blood cells, nucleus, etc. This detection is not only rapid, accurate, but also intuitive and clear.
  • infrared guidance is currently the mainstream guidance method for missiles, with the increasing maturity of infrared countermeasure technology, the effectiveness of infrared guided missiles has been seriously threatened.
  • guidance technology is developing towards two-color guidance, including infrared-ultraviolet sigh guidance.
  • the UV detector can still be used to detect the target's UV radiation and direct the missile to the target for attack.
  • UV communication is a new type of communication with great potential for development. It uses ultraviolet radiation for information transmission. Compared with ordinary radio communication, it has the advantages of low eavesdropping rate and high anti-interference ability, enabling close-range secure communication. Compared with advanced laser communication, it can be used in all directions. Multi-channel communication and directional communication.
  • UV imaging technology makes use of these substances.
  • Ultraviolet imager The ingested ultraviolet image is magnified and converted into a visible light image to expose the hidden information for the criminal investigator to conveniently observe in real time, and after finding the relevant important object, it can also be used for photo forensics.
  • the digital photography forensics model can also be used to conduct timely cross-checking of criminals through computer networking, which greatly shortens the time for handling cases and improves work efficiency.
  • the most important advantage of using the police UV imaging system is that it can perform fast observation, search, location, forensics and photography without any processing. It greatly improves the work efficiency, and because of its fast and intuitive search, it can also find some traces and physical evidence that can not be found by traditional methods in time. In addition, because this method does not touch the surface of the physical evidence, it greatly enhances the physical evidence. The extraction rate and utilization rate, all these advantages make it highly praised by the criminal investigation community.
  • Ultraviolet light can be divided into medium ultraviolet of 0.2-0.3. urn band and near ultraviolet of 0.3 ⁇ 0.4 ⁇ 3.
  • the mid-UV in the sun is almost completely absorbed by the ozone layer in the atmosphere, so the ultraviolet region of this wavelength is often called the “day blind zone”.
  • Ultraviolet detection technology uses the medium-ultraviolet band.
  • Ultraviolet spectral imaging detection technology is a new detection imaging technology developed by European and American countries for military purposes. It is used to observe and detect the "day blind zone” (240 ⁇ 280mn) ultraviolet signal, and convert the ultraviolet image signal into visible light image signal for observation and measurement. Using this technology, many physical, chemical, and biological phenomena that are not observed with conventional optical instruments can be observed. Because it works in the "day blind zone” band, its work is not disturbed by sunlight, that is, instruments using this technology. It can work in daylight, the image is cut off, the work is reliable, and the use is convenient. Such instruments have been put into use in developed countries and Russia. These instruments can be used in areas such as power system testing, space science, and environmental protection research.
  • the inorganic ultraviolet imaging detection system mainly includes: ultraviolet imaging objective lens, ultraviolet light filter, ultraviolet image enhancement system, charge coupled device (CCD), image display system and the like.
  • the working principle is as shown in FIG. 1.
  • the ultraviolet signal source 100 is irradiated by background light (including visible light, ultraviolet light, infrared light, etc.), and is transmitted from the ultraviolet signal source 100 to the ultraviolet imaging lens 200.
  • background light including visible light, ultraviolet light, infrared light, etc.
  • the transmitted ultraviolet filter 300 is irradiated onto the photocathode of the ultraviolet image intensifier 400.
  • the ultraviolet signal is amplified and converted into a visible light signal output, and then the imaging beam is passed through the CCD camera. 500, Finally, after signal processing, output to the display device, and prepare 600 to observe the record.
  • the materials of inorganic UV detectors are mainly: The first generation of elemental semiconductor materials, the second generation of compounds
  • the semiconductor materials and the third-generation wide-bandgap semiconductor materials, the first-generation elemental semiconductor materials mainly include silicon (Si), and the second-generation compound semiconductor materials mainly include gallium arsenide (GaAs), indium phosphide (InP), etc.
  • Generation of wide band gap semiconductor materials mainly include silicon carbide (SiC), gallium carbide (GaN), zinc oxide (ZnO) and diamond.
  • the first-generation elemental semiconductor materials and the second-cut compound semiconductor materials have many limitations due to their small forbidden band width, large long-wavelength cut-off wavelength, and low maximum operating temperature, which make the characteristics and use of UV detectors very limited. Claim.
  • the third-generation wide bandgap semiconductor material has the characteristics of large forbidden band width, high electron drift saturation speed, small dielectric constant and good thermal conductivity, and is suitable for making electronic devices with radiation resistance, high frequency, high power and high density integration; With its unique wide bandgap, it is also possible to produce blue, green and ultraviolet light-emitting devices and photodetector devices.
  • the object of the present invention is to provide an ultraviolet detector component based on an organic P-n junction, which has the advantages of simple structure, small volume, light weight, simple manufacturing process and low production cost, and is made of organic materials, and the raw materials are cheap and various. Wide range of sources and can be prepared by chemical synthesis, and the UV detector device can be prepared on a flexible substrate, which can increase the wide angle of shooting.
  • the present invention provides an organic p-n junction based ultraviolet detector device, comprising: an active glass substrate and a package glass substrate disposed opposite to each other, and disposed between the active glass substrate and the package glass substrate The plurality of organic P-11 junctions and the encapsulation material disposed on the peripheral edge regions of the active glass substrate and the package glass substrate, wherein the plurality of organic pn junctions are distributed in a matrix on the active glass substrate.
  • Each of the organic p-n junctions includes: an anode disposed on the active glass substrate, an organic material layer disposed on the anode, and a cathode disposed on the organic material layer, the cathode and the package glass The substrates are against each other.
  • the organic material layer includes an organic p-type material and an organic n-type material, the organic p-type material is an ultraviolet light-emitting material; the organic n-type material is a fullerene derivative, and a molecular structure formula of the fullerene derivative for:
  • the carbazole ultraviolet luminescent material 3.25e ⁇ value is 394nnic, the ultraviolet luminescent material is a pentaphenyl light material, and the pentaphenyl violet
  • the molecular structure is: The band gap is 3,48 eV, and the emission peak value is 3 iOnm.
  • An organic pn junction-based ultraviolet detector device is provided, including: a relatively parallel source glass substrate and a package glass substrate, and is disposed on the active glass substrate and package. a plurality of pn junction between the organic glass substrate, and was provided on the glass substrate and the active region of the peripheral edge of the glass substrate package encapsulating material, the number of organic p "rl active junction on the glass substrate Matrix distribution
  • Each of the organic pn junctions includes: an anode disposed on the active glass substrate, an organic material layer disposed on the anode, and a cathode disposed on the organic material layer, the cathode and the package.
  • the glass substrate is close to the base.
  • the organic material layer includes an organic p-type material and an organic n-type material, the organic p-type material is an ultraviolet luminescent material; the organic n-type material is a fullerene derivative, the fullerene
  • the highest occupied orbital energy level of the fullerene derivative is 6.0 eV
  • the channel level is 4.2 eV
  • the carrier mobility is li ⁇ cm ⁇ V 's.
  • the ultraviolet luminescent material is an oxazole ultraviolet ray, the oxazole purple eve
  • the molecular structure is:
  • the pentaphenyl ultraviolet luminescent material has a band gap of 3.48 eV and an emission light "if peak of 3 i0 nm.
  • the present invention also provides an ultraviolet image detector using an organic p-n junction based ultraviolet detector, including: a shell a UV imaging lens mounted on the housing, an ultraviolet transmissive filter mounted on the housing and disposed opposite to the ultraviolet imaging lens, mounted in the housing and transparent to the ultraviolet light
  • An organic P-n junction based ultraviolet detector device disposed in the filter, a circuit structure mounted in the housing and electrically connected to the organic p-n junction based ultraviolet detector device, and mounted on the housing
  • a display device electrically connected to the circuit structure, the organic ⁇ - ⁇ junction-based ultraviolet detector device comprises: an active glass substrate and a package glass substrate disposed opposite to each other, and disposed on the active glass substrate a plurality of organic p ⁇ junctions between the package glass substrates, and encapsulation materials disposed on the peripheral edge regions of the
  • the active glass substrate of the organic ⁇ - ⁇ junction-based ultraviolet detector device is disposed toward the ultraviolet permeable filter, the housing is provided with a first opening and a second opening, and the ultraviolet imaging lens and the ultraviolet permeable filter
  • the light sheet is mounted on the first opening and the ultraviolet transparent filter is mounted behind the ultraviolet imaging lens, and the display device is mounted on the second opening;
  • the circuit structure includes: a photocurrent collecting and amplifying module electrically connected to the organic p-n junction based ultraviolet detecting device, and a display driving module electrically connected to the photocurrent collecting and amplifying module, the display driving The module is also electrically coupled to the display device.
  • Each of the organic ⁇ -n junctions includes: an anode disposed on the active glass substrate, an organic material layer disposed on the anode, and a cathode disposed on the organic material layer, the cathode and the package glass
  • the organic material layer comprises an organic p-type material and an organic n-type material, the organic p-type material is an ultraviolet light-emitting material; the organic n-type material is a fullerene derivative, and the fullerene is derived
  • the molecular structure of the object is:
  • the purple is carbazole purple 'the carbazole purple
  • the molecular structure is The pentaphenyl ultraviolet ray material has a band gap of 3.48 eV and an emission light "if peak value of 3 i0 nm.
  • Advantageous Effects of the Invention The organic pn junction-based ultraviolet detector device of the present invention and an ultraviolet image detector using the same
  • the organic P-11 junction absorbs ultraviolet radiation photons to form excitons (electron-hole pairs), exciton separation at the interface between the organic p material and the organic ri material, electrons flow to the cathode, holes flow to the anode, and light is formed
  • the current, the circuit structure collects the photocurrent, and after the large-scale, finally presents a monochrome human-visible image on the display device, the image has high contrast and strong detail resolution, and the ultraviolet detector has a simple structure and small volume.
  • the utility model has the advantages of light weight, simple manufacturing process, low production cost, low cost, large variety, wide source and can be prepared by chemical synthesis, and the ultraviolet detector component can be prepared on
  • FIG. 1 is a schematic view showing the working principle of a conventional inorganic ultraviolet imaging detection system
  • FIG. 2 is a schematic structural view of an ultraviolet detecting device based on an organic ⁇ - ⁇ junction according to the present invention
  • FIG. 3 is a schematic view showing a plurality of organic p-n junctions in an ultraviolet detecting device based on an organic p-n junction
  • FIG. 4 is a schematic view showing the principle of photocurrent generation of an ultraviolet detector element based on an organic p-n junction
  • Figure 5 is a perspective view of the ultraviolet image detector of the present invention.
  • FIG. 6 is a schematic view showing the connection and connection of circuit structures in the ultraviolet image detector of the present invention.
  • FIG. 7 is a schematic diagram of the operation of the ultraviolet image detector of the present invention. detailed description
  • the present invention provides an ultraviolet detector based on an organic P- ⁇ junction.
  • the organic pn junction-based ultraviolet detector device 40 specifically includes: an active glass substrate 42 and a package glass substrate disposed in parallel with each other. 44. Several organic elements disposed between the active glass substrate 42 and the package glass substrate 44 a -n junction 43 and an encapsulation material 48 disposed on the peripheral edge regions of the active glass substrate 42 and the package glass substrate 44.
  • the plurality of organic pn junctions 43 are distributed in a matrix, which is advantageous for improving the application of the organic pn-based Sensing the sensitivity of the ultraviolet image detector of the ultraviolet detector component 40; sealing and bonding the active glass substrate 42 and the package glass substrate 44 together with the encapsulation material 48 prevents water and oxygen from intruding into the packaged outer detector component 40.
  • the interior of the ultraviolet detector element 40 is maintained, and the lifetime of the organic-n junction 43 is extended.
  • the anode 45 is disposed on the active glass substrate 42 and the organic material layer 46 is disposed on the anode 45.
  • a cathode 47 disposed on the organic material layer 46, the cathode 47 abutting the package glass substrate 44.
  • the organic material layer 46 includes an organic p-type material and an organic n-type material. Referring to FIG. 4, an interface 87 is formed between the organic p-type material and the organic n-type material, and the organic material layer 46 absorbs the external ultraviolet light 70.
  • Excitons 82 (electron-hole pairs) are formed, and the excitons 82 are separated into holes 84 and electrons 86 at the interface 87 by external voltage, electrons 86 flow to the cathode 47, and holes 84 flow to the anode 45. Thereby a photocurrent is formed.
  • the organic p-type material is an ultraviolet luminescent material, and the ultraviolet luminescent material is preferably carbazole.
  • the electron transport capability and the high electron affinity have a maximum occupied orbital (HOMO) level of 6.0 eV, a minimum unoccupied orbital (LUMO) level of 4.2 eV, and a carrier mobility of i0- /V ⁇ . s, is an excellent solar cell electronic transmission material.
  • the present invention also provides an ultraviolet image detector using an organic pn junction-based ultraviolet detector device, comprising: a housing 10.
  • An ultraviolet imaging lens 20 mounted on the housing 10, an ultraviolet transmissive filter 30 mounted on the housing 10 and disposed opposite to the ultraviolet imaging lens 20, mounted in the housing 10 and oppositely
  • the organic p-n junction based ultraviolet detector component 40 disposed in the ultraviolet transmission filter 30 is mounted in the housing 10 and a circuit structure 50 electrically connected to the ultraviolet detecting device 40 of the organic p- 11 junction, and a display device 60 mounted on the housing 10 and electrically connected to the circuit structure 50, the organic pn junction
  • the ultraviolet detector device 40 includes: an active glass substrate 42 and a package glass substrate 44 disposed opposite to each other, a plurality of organic pn junctions 43 disposed between the active glass substrate 42 and the package glass substrate 44, and The active glass substrate 42 and the encapsulating material 48 of the peripheral edge region of the encapsulating glass substrate 44, the plurality of organic p-n junctions 43 are distributed in
  • the active glass substrate 42 of the organic pn junction-based ultraviolet detector device 40 is disposed toward the ultraviolet permeable filter 30, and the external ultraviolet ray 70 is filtered through the ultraviolet imaging lens 20 and the ultraviolet permeable filter 30.
  • the side of the active glass substrate 42 is incident into the ultraviolet detecting element 40 based on the organic p-n junction.
  • the housing 10 is correspondingly provided with a first opening 12 and a second opening 14 , and the ultraviolet imaging lens 20 and the ultraviolet permeable filter 30 are both mounted on the first opening 12 and the ultraviolet transparent filter
  • the sheet 30 is mounted behind the ultraviolet imaging lens 20, and the external ultraviolet light 70 can be directly irradiated onto the surface of the ultraviolet imaging lens 20; the display device 60 can be selectively mounted on the second opening 14 for displaying the ultraviolet image.
  • the intensity of the ultraviolet light 70 detected by the detector that is, an image that is visible to the human eye in a single color.
  • the display device 60 can be separated from the casing 10, and separately provided, and can be installed in a place convenient for the user to observe, thereby improving operability.
  • the circuit structure 50 includes: a photocurrent collecting and amplifying module 52 electrically connected to the organic p-n junction based ultraviolet detecting device 40, and a display driving module 54 electrically connected to the photocurrent collecting and amplifying module 52.
  • the ultraviolet detector element 40 of the organic p-n junction generates excitons 82 (electron-hole pairs) under ultraviolet light irradiation, and the excitons 82 are finally separated to form a photocurrent, and the photocurrent is collected and amplified.
  • the module 52 collects the magnitude of the photocurrent, that is, collects the intensity of the ultraviolet light 70 that is irradiated onto the ultraviolet detector element 40 based on the organic pn junction, and amplifies the photocurrent to be transmitted to the display driving module 54.
  • the display driving module 54 is further electrically connected to the display device 60, and drives the display device 60 to display a monochrome image according to the photocurrent signal.
  • the brightness of the monochrome image corresponds to the ultraviolet light irradiated to the organic p-n junction.
  • Each of the organic pn junctions 43 includes: an anode 45 disposed on the active glass substrate 42, an organic material layer 46 disposed on the anode 45, and a cathode 47 disposed on the organic material layer 46, the cathode 47 abuts against the package glass substrate 44.
  • the organic material layer 46 includes Organic n-profile ⁇ As shown in Figure 4, the organic p-type material and the organic n-type interface 87, there is; 'layer 46 absorbs the external purple Sub-82 (electron-hole pair), the excitons 82 are separated into holes 84 and electrons 86 at the interface 87 by external voltage, electrons 86 flow to the cathode 47, and holes 84 flow to the anode 45, thereby forming light. Current.
  • the photocurrent flows through the circuit to the photocurrent collection and amplification module 52, and the photocurrent is amplified.
  • the photocurrent on each of the organic p II junctions 43 is collected and amplified, and finally output to the display device 60 to form a monochrome image.
  • the magnitude of the current formed by each of the organic pn junctions 43 corresponds to the intensity of the corresponding regions on the display device 60.
  • the organic p-type material is ultraviolet light
  • the violet can be selected from a pentaphenyl ultraviolet luminescent material, and its molecular structure
  • the band gap is 3 48 eV and the m3 ⁇ 4T value is 310 ⁇ .
  • the organic n-type material is preferably selected from Fuller Bio (PCBM),
  • the electron transport capability and the high electron affinity have a maximum occupied orbital (HOMO) level of 6.0 eV and a minimum unoccupied orbital (LUMO) level of 4. 2 eV and a carrier mobility of 10 - 3 cm. 2 /V ⁇ s, is an excellent solar cell electronic transmission material.
  • HOMO maximum occupied orbital
  • LUMO minimum unoccupied orbital
  • the ultraviolet imaging lens 20 first filters out a portion of the external ultraviolet light 70, and then uses the ultraviolet transmission filter 30 to transmit visible light (wavelength range 390 nm to 760 nm) and infrared radiation. Only the ultraviolet rays of the "day blind zone” band (240mn ⁇ 280nm) are left, and the ultraviolet detector element 40 based on the organic pn junction absorbs the radiation photons of the "blinding zone” band ultraviolet rays, forming excitons 82 (electron-hole pairs), The exciton 82 is separated from the interface of the organic p material and the organic n material.
  • the electrons 86 flow to the cathode, and the holes 84 flow to the anode.
  • the circuit structure 50 collects the photocurrent and, after amplification, finally presents a monochromatic color on the display device 60.
  • the image has high contrast and strong detail resolution;
  • the ultraviolet detector 40 has a simple structure, small volume, light weight, simple manufacturing process, low production cost, low cost, large variety, wide source and can be prepared by chemical synthesis, and
  • the ultraviolet detector element 40 can be prepared on a flexible substrate to increase the wide angle of shooting.
  • the organic P-junction-based ultraviolet detector of the present invention and the ultraviolet image detector using the same absorb ultraviolet photons by an organic pn junction to form excitons (electron-hole pairs), in organic
  • the exciton at the interface between the p material and the organic n material is separated, the electrons flow to the cathode, the holes flow to the anode, thereby forming a photocurrent, and the circuit structure collects the photocurrent, and after amplification, finally presents a monochrome person on the display device.
  • the image visible in the eye has high contrast and strong detail resolution.
  • the UV detector has simple structure, small volume, light weight, simple manufacturing process, low production cost, low cost, variety, wide source and chemistry. Synthetic preparation, and the ultraviolet detector member can be prepared on a flexible substrate, which can increase the wide angle of shooting.

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Abstract

一种基于有机p-n结（43）的紫外探测器件（40）及使用该器件的紫外图像探测器，该基于有机p-n结（43）的紫外探测器件（40）包括：相对设置的有源玻璃基板（42）与封装玻璃基板（44）、设于该有源玻璃基板（42）与封装玻璃基板（44）之间的数个有机p-n结（43）、及设于该有源玻璃基板（42）与封装玻璃基板（44）的四周边缘区域的封装材料（48），该有机p-n结（43）在有源玻璃基板（42）上呈矩阵式分布。该基于有机p-n结（43）的紫外探测器件（40）及使用该器件的紫外图像探测器，制作工艺简单，生产成本低，原料便宜、种类多、来源广泛且可以通过化学合成制备，并且该紫外探测器件（40）结构简单、体积小、重量轻，可制备在柔性衬底上，可以增大拍摄广角。

Description

.于有机 P- 11结的紫外探测器件及使用该器件的紫外图像探测.
Figure imgf000003_0001
p- n结的紫外 探测器件及使用该器件的紫外图像探测器 背景; 制、
Figure imgf000003_0002
消毒 紫外线激光器控制、 分光镜、 电弧探测等方 对于火焰燃烧中产生的 0,185〜0.260mm波长的紫外线， 可以采用一种 固态物质作为紫外探测的敏感元件， 如碳化硅 （ SiC ) 或者硝酸铝 ( ΑΙ(Ν03)3 ) 。 根据防爆类型， 该敏感元件可分为： 隔爆型及本安型。 这 些敏感元件的使用场合有： ①石油和天然气的勘探、 生产、 储存与卸料； ②汽车、 飞机的制造、 油漆喷雾房； ③炸药、 军需品； ④医药业； ⑤废品 焚烧； ⑥粉房等高岚险工业染料的生产、 储存、 运输等。
紫外探测技术在医学、 生物学方面也有着广泛的应用， 特别是近几年 在皮肤病诊断方面有着独特的应用效杲。 利用紫外探测技术在检测诊断皮 肤病时可直接看到病变细节， 也可用来检测癌细胞、 微生物、 血色素、 红 血球、 白血球、 细胞核等， 这种检测不但迅速、 准确， 而且直观、 清楚。
在军用方面， 如紫外制导等， 尽管红外制导是目前导弹的主流制导方 式， 但随着红外对抗技术的日趋成熟， 红外制导导弹的攻击效果受到了严 重的威胁。 为了反红外对抗技术， 制导技术正在向双色制导方面发展， 这 其中也包括红外-紫外.叹色制导方式。 在受到红外千扰时， 仍可使用紫外探 测器探测目标的紫外辐射， 并把导弹引至目标进行攻击。
在通信方面， 紫外通信是一种具有极大发展潜力的新型通讯方式。 它 是利用紫外辐射进行信息传递， 与普通的无线电通讯相比， 具有低窃听 率、 高抗千扰性的优点， 能实现近距离保密通讯； 与先进的激光通讯相 比， 具有可进行全方位多路通讯和定向通讯等优点。
另外， 人体的指纹印、 体液 （血液、 精液、 唾液） 以及违禁的火药、 麻醉品等物质对紫外线具有特殊的吸收、 反射、 散射及荧光特性， 警用紫 外成像技术正是利用了这些物质对紫外光所呈现出的特性， 用紫外成像仪 将所摄取的紫外图像放大并转化为可见光图像使其隐藏的信息得以暴露， 以供刑侦人员方便地进行实时的观察， 在找到相关重要被检物后， 还可利 用其进行照相取证。 数字化照相取证样板， 又可以通过计算机联网对罪犯 进行及时地对照查寻， 大大地缩短了办案时间， 提高了工作效率。 与传统 的现场侦查痕迹提取工作相比， 用警用紫外成像系统来进行同样工作的 话， 其最大的优点就在于它不必进行任何处理即可进行快速观察、 搜索、 定位、 取证及照相， 这不仅大大地提高了工作效率， 同时也由于其搜索的 快速、 直观， 它还能及时地发现传统方法所不能发现的一些痕迹和物证； 另外， 由于这种方法不接触物证表面， 从而大大提高了物证的提取率和利 用率， 所有这些优点使得它深受刑侦界的好评。
紫外线可以分为 0.2-0.3.urn波段的中紫外与 0.3~0.4μιτ3的近紫外。 太 阳光中的中紫外， 几乎完全被大气中的臭氧层吸收掉了， 所以这段波长的 紫外光区域常被称为 "日盲区" 。 紫外探测技术使用的就是中紫外这一个 波段。
紫外光谱成像检测技术是欧美国家为军事目的发展起来的新型检测成 像技术。 它的特点是用于观察和检测 "日盲区" （240〜280mn ) 紫外光信 号， 并将紫外图像信号转换成可见光图像信号， 进行观察和测量。 利用该 技术可以观察到许多用传统光学仪器观察不到的物理、 化学、 生物现象； 又因为其工作在 "日盲区" 波段， 所以它的工作不受日光的千扰， 即采用 该技术的仪器可以在日光下工作， 图像清斷、 工作可靠、 使用方便。 欧美 发达国家和俄罗斯均已有这类仪器投入使用。 这类仪器可用于电力系统检 测、 太空科学和环境保护研究等领域。
无机紫外成像检测系统主要包括： 紫外成像物镜、 紫外光滤光镜、 紫 外像增强系统、 电荷耦合元件 （Charge Coupled Device, CCD ) 、 图像显 示系统等。 其工作原理如图 1所示， 紫外信号源 100被背景光（包括可见 光、 紫外光和红外光等） 照射， 从紫外信号源 100 传输到紫外成像镜头 200的有紫外信号源 100 自身辐射的紫外光， 也有紫外信号源 100反射的 背景光； 成像光束经过紫外成像镜头 200后， 有一部分背景光被滤除， 有 一部分背景光仍然存在； 其后光束再通过只允许 "日盲区" 波段的光透过 的紫外光滤光片 300， 照射到紫外像增强器 400 的光电阴极上， 经过紫外 像增强器 400 后， 紫外信号被增强放大并被转化为可见光信号输出， 然 后， 成像光束经 CCD相机 500， 最后， 经信号处理后输出到显示设,备 600 以观察记录。
无机紫外探测器的材料主要有： 第一代元素半导体材料、 第二代化合 物半导体材料等以及第三代宽带隙半导体材料 第一代元素半导体材料主 要包括硅（Si ) , 第二代化合物半导体材料主要包括砷化镓（GaAs ) 、 磷 化铟 （InP ) 等， 第三代宽带隙半导体材料主要包括破化硅（SiC ) 、 碳化 镓（GaN ) 、 氧化锌 （ZnO ) 和金刚石等。 第一代元素半导体材料及第二 伐化合物半导体材料由于具有禁带宽度小、 器件长波截止波长大、 最高工 作温度低等特点 使得紫外探测器件的特性及使用存在很大局限性， 满足 不了实用的要求。 第三代宽带隙半导体材料具有禁带宽度大、 电子漂移饱 和速度高、 介电常数小、 导热性能好等特点， 适合于制作抗辐射、 高频、 大功率和高密度集成的电子器件； 而利用其特有的宽禁带， 还可以制作 蓝、 绿光和紫外的发光器件和光探测器件。
尽管如此， 无机紫外探测器仍存在制备成本高、 工艺复杂、 材料昂 贵， 不能柔性塑料衬底上制备薄膜等问题。 发明内容
本发明的目的在于提供一种基于有机 P- n 结的紫外探测器件， 其结构 简单、 体积小、 重量轻、 制作工艺简单、 生产成本低， 采用有机材料制作 而成， 原料便宜、 种类多、 来源广泛且可以通过化学合成制备， 并且该紫 外探测器件可制备在柔性衬底上， 可以增大拍摄广角„
本发明的又一目的在于提供一种紫外图像探测器， 其结构简单、 体积 小。 重量轻， 其采用基于有机 p-n结的紫外探测器件， 制作工艺简单， 生 产成本低， 且釆用的原料便宜、 种类多、 来源广泛且可以通过化学合成制 备， 该紫外图像探测器拍摄广角大。
为实现上述目的， 本发明提供一种基于有机 p- n结的紫外探测器件， 包括： 相对平行设置的有源玻璃基板与封装玻璃基板、 设于所述有源玻璃 基板与封装玻璃基板之间的数个有机 P-11结、 及设于所述有源玻璃基板与 封装玻璃基板的 周边缘区域的封装材料， 所述数个有机 p n结在所述有 源玻璃基板上呈矩阵式分布。
每一所述有机 p- n结包括： 设于有源玻璃基板上的阳极、 设于所述阳 极上的有机材料层、 及设于有机材料层上的阴极， 所述阴极与所述封装玻 璃基板相抵靠。
所述有机材料层包括有机 p型材料和有机 η型材料， 所述有机 ρ型材 料为紫外发光材料； 所述有机 η型材料为富勒烯衍生物， 所述富勒烯衍生 物的分子结构式为：
Figure imgf000006_0001
所述富勒 ？ 最高已占轨道能级为 6,0eV, 最低未占轨道能级 为 4.2eV, 载流子 i 率为 iO^cm^V^
所述紫 咔唑类紫外发光材料， 所述咔唑类紫外发^ 的
Figure imgf000006_0002
所述咔唑类紫外发光材料 3.25e\ 值为 394nnic 所述紫外发光材料为五联苯 光材料， 所述五联苯紫
的分子结构式为：
Figure imgf000006_0003
的带隙为 3,48eV， 发射光潘峰值为 3 iOnm„ 提供一种基于有机 p n结的紫外探测器件， 包括： 相对平行 源玻璃基板与封装玻璃基板、 设于所述有源玻璃基板与封装玻璃 基板之间的数个有机 p-n结、 及设于所述有源玻璃基板与封装玻璃基板的 周边缘区域的封装材料， 所述数个有机 p„rl结在所述有源玻璃基板上呈 矩阵式分布； 其中， 每一所述有机 p-n结包括： 设于有源玻璃基板上的阳极、 设于 所述阳极上的有机材料层、 及设于有机材料层上的阴极， 所述阴极与所述. 封装玻璃基板相^!氏靠。
所述有机材料层包括有机 p型材料和有机 n型材料， 所述有机 p型材 料为紫外发光材料； 所述有机 n型材料为富勒烯衍生物， 所述富勒 物的
Figure imgf000007_0001
所述富勒烯衍生物的最高已占轨道能级为 6.0eV， ,道能级 为 4.2eV， 载流子迁移率为 li^cm^V ' s。
所述紫外发光材料为咔唑类紫外发 所述咔唑类紫夕
的分
为 3.25eV,
Figure imgf000007_0002
所述紫夕
的分子结构式为：
Figure imgf000007_0003
所述五联苯紫外发光材料的带隙为 3.48eV, 发射光 "if峰值为 3 i0nm。 本发明还提供一种使用基于有机 p- n结的紫外探测器件的紫外图像探 测器， 包括： 壳体、 安装于所述壳体上的紫外成像镜头、 安装于所述壳体 上且相对所述紫外成像镜头设置的紫外透过滤光片、 安装于所述壳体内并 相对所述紫外透过滤光片设置的基于有机 P- n 结的紫外探测器件、 安装于 所述壳体内并与所述基于有机 p- η 结的紫外探测器件电性连接的电路结 构、 及安装于所述壳体上并与所述电路结构电性连接的显示器件， 所述基 于有机 ρ- η结的紫外探测器件包括： 相对平行设置的有源玻璃基板与封装 玻璃基板、 设于所述有源玻璃基板与封装玻璃基板之间的数个有机 ρ η 结、 及设于所述有源玻璃基板与封装玻璃基板的四周边缘区域的封装材 料， 所述数个有机 ρ η结在所述有源玻璃基板上呈矩阵式分布。
所述基于有机 ρ- η 结的紫外探测器件的有源玻璃基板朝向紫外透过滤 光片设置， 所述壳体设有第一开口及第二开口， 所述紫外成像镜头与紫外 透过滤光片均安装于所述第一开口上且所述紫外透过滤光片安装于所述紫 外成像镜头后方， 所述显示器件安装于所述第二开口上；
所述电路结构包括： 与所述基于有机 ρ- η结的紫外探测器件电性连接 的光电流收集并放大模块、 及与光电流收集并放大模块电性连接的显示驱 动模块， 所述显示驱动模块还与所述显示器件电性连接。
每一所述有机 Ρ- η结包括： 设于有源玻璃基板上的阳极、 设于所述阳 极上的有机材料层、 及设于有机材料层上的阴极， 所述阴极与所述封装玻 璃基板相抵靠； 所述有机材料层包括有机 ρ型材料和有机 η型材料， 所述 有机 ρ型材料为紫外发光材料； 所述有机 η型材料为富勒婦衍生物， 所述 富勒烯衍生物的分子结构式为：
Figure imgf000008_0001
为 4。2eV, 为 l T3enfZV - s
所述紫 为咔唑类紫' 所述咔唑类紫
的
发射光潘峰值为 394nm。
Figure imgf000009_0001
所述五联苯紫
的分子结构式为
Figure imgf000009_0002
所述五联苯紫外发光材料的带隙为 3.48eV, 发射光 "if峰值为 3 i0nm。 本发明的有益效果： 本发明的基于有机 p n结的紫外探测器件及使用 该器件的紫外图像探测器， 通过有机 P-11结吸收紫外线的辐射光子， 形成 激子 （电子空穴对） ， 在有机 p材料与有机 ri材料的界面处激子分离， 电 子流向阴极， 空穴流向阳极， 从 形成光电流， 电路结构收集该光电流， 并经过^大后， 最终在显示器件上呈现出单色的人眼可见的图像， 该图像 对比度高， 分辨细节能力强， 该紫外探测器件结构简单、 体积小、 重量 轻、 制作工艺简单， 生产成本低， 所需材料便宜、 种类多、 来源广泛且可 以通过化学合成制备， 并且该紫外探测器件可制备在柔性衬底上， 可以增 大拍摄广角。
为了能更进一步了解本发明的特征以及技术内容， 请参阅以下有关本 发明的详细说明与附图， 然而附图仅提供参考与说明用， 并非用来对本发 明加以限制。 附图说明
下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见。 附图中，
图 1为现有的无机紫外成像检测系统的工作原理示意图；
图 2为本发明基于有机 ρ-ΐί结的紫外探测器件的结构示意图； 图 3为本发明基于有机 p-n结的紫外探测器件中的数个有机 p- n结设 置示意图；
图 4为本发明基于有机 p- n结的紫外探测器件的光电流产生原理示意 图；
图 5为本发明紫外图像探测器的立体图；
图 6为本发明紫外图像探测器中电路结构连.接示意图；
图 7为本发明紫外图像探测器的工作原理图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果， 以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 2 至 3， 本发明提供一种基于有机 P- Ώ 结的紫外探测器件
40， 利用新一代太阳能电池技术 -有机太阳能电池的技术， 制备出具有像素 点矩阵的器件结构。 所述基于有机 p-n结的紫外探测器件 40具体包括： 相 对平行设置的有源玻璃基板 42与封装玻璃基板. 44、 设于所述有源玻璃基 板 42与封装玻璃基板 44之间的数个有机 -n结 43、 及设于所述有源玻璃 基板 42与封装玻璃基板 44的四周边缘区域的封装材料 48， 所述数个有机 p-n结 43呈矩阵式分布， 有利于提高应用该基于有机 p n结紫外探测器件 40的紫外图像探测器的灵敏度； 利用封装材料 48将所述有源玻璃基板 42 与封装玻璃基板 44 密封粘接在一起， 可以阻止水、 氧气侵入该封装后的 外探测器件 40的内部， 保持紫外探测器件 40的性能， 并且延长使用寿 每一所述有机 -n结 43包括： 设于有源玻璃基板 42上的阳极 45、 设 于所述阳极 45上的有机材料层 46、 及设于有机材料层 46上的阴极 47， 所述阴极 47与所述封装玻璃基板 44相抵靠。
所述有机材料层 46包括有机 p型材料和有机 n型材料， 请参阅图 4 , 所述有机 p型材料与有机 n型材料之间形成一界面 87 , 该有机材料层 46 吸收外界紫外线 70后会形成激子 82 (电子空穴对） ， 所述激子 82在外 界电压的作用下于该界面 87处分离成空穴 84与电子 86, 电子 86流向阴 极 47 , 空穴 84流向阳极 45 , 从而形成光电流。
所述有机 p型材料为紫外发光材料， 所述紫外发光材料优先选用咔唑
Figure imgf000011_0001
Figure imgf000011_0002
Figure imgf000011_0003
电子传输能力及较高的电子亲和势， 其最高已占轨道（HOMO ) 能级为 6.0eV , 最低未占轨道 （ LUMO ) 能级为 4.2eV， 载流子迁移率为 i0- /V^s, 是优良的太阳能电池电子传输材料。
请参阅图 2至图 6, 本发明还提供一种使用基于有机 p-n结的紫外探 测器件的紫外图像探测器， 其包括： 壳体 10。 安装于所述壳体 10上的紫 外成像镜头 20、 安装于所述壳体 10上且相对所述紫外成像镜头 20设置的 紫外透过滤光片 30、 安装于所述壳体 10内并相对所述紫外透过滤光片 30 设置的基于有机 p— n结的紫外探测器件 40、 安装于所述壳体 10 内并与所 述 于有机 p- 11结的紫外探测器件 40 电性连接的电路结构 50、 及安装于 所述壳体 10上并与所述电路结构 50电性连接的显示器件 60, 所述基于有 机 p n结的紫外探测器件 40包括： 相对设置的有源玻璃基板 42与封装玻 璃基板 44、 设于所述有源玻璃基板 42与封装玻璃基板 44之间的数个有机 p-n结 43、 及设于所述有源玻璃基板 42与封装玻璃基板 44的四周边缘区 域的封装材料 48， 所述数个有机 p- η结 43呈矩阵式分布， 有利于提高紫 外图像探测器性能； 利用封装材料 48将所述有源玻璃基板 42与封装玻璃 基板 44 密封粘接在一起， 可以阻止水， 氧气侵入该封装后的紫外探测器 件 40内部， 保持紫外探测器件 40性能， 并且延长基于有机 Ρ- Ώ结的紫外 探测器件 40的寿命。
所述基于有机 p-n结的紫外探测器件 40的有源玻璃基板 42朝向紫外 透过滤光片 30设置， 外界的紫外线 70经过所述紫外成像镜头 20以及紫 外透过滤光片 30过滤后, 从有源玻璃基板 42侧入射到基于有机 ρ- η结的 紫外探测器件 40内。 所述壳体 10对应设有第一开口 12及第二开口 14， 所述紫外成像镜头 20与紫外透过滤光片 30均安装于所述第一开口 12上 且所述紫外透过滤光片 30安装于所述紫外成像镜头 20后方， 外界的紫外 线 70可以直接照射至紫外成像镜头 20的表面； 所述显示器件 60可以选 择安装于所述第二开口 14 上， 用于显示该紫外图像探测器探测到的紫外 线 70的强度， 即显示单色的人眼可见的图像。 另外， 该显示器件 60也可 以与壳体 10 分离， 另外单独设置， 进而可以安装在方便用户观察到的地 方， 提高可操作性。
所述电路结构 50包括： 与所述基于有机 ρ- η结的紫外探测器件 40电 性连接的光电流收集并放大模块 52、 及与光电流收集并放大模块 52 电性 连接的显示驱动模块 54, 所述 于有机 p- n结的紫外探测器件 40在紫外 线 70照射下会产生激子 82 (电子-空穴对） ， 该些激子 82最后分离形成 光电流， 所述光电流收集并放大模块 52 收集该光电流的大小， 即采集照 射至基于有机 p n结的紫外探测器件 40上的紫外线 70强弱， 并对该光电 流进行放大， 传输给显示驱动模块 54。 所述显示驱动模块 54还与所述显 示器件 60 电性连接， 进 根据光电流信号驱动显示器件 60 显示单色图 像， 该单色图像的明暗强度对应于照射至基于有机 p- n结的紫外探测器件 40上相应区域的紫外线 70的强弱。
每一所述有机 p-n结 43包括： 设于有源玻璃基板 42上的阳极 45、 设 于所述阳极 45上的有机材料层 46、 及设于有机材料层 46上的阴极 47， 所述阴极 47与所述封装玻璃基板 44相抵靠。 所述有机材料层 46 包括有 有机 n型材^ 如图 4所示， 所述有机 p型材料与有机 n型 界面 87, 该有； '层 46吸收外界紫
Figure imgf000013_0001
子 82 (电子空穴对） ， 所述激子 82在外界电压的作用下于该界面 87处 分离成空穴 84与电子 86， 电子 86流向阴极 47， 空穴 84流向阳极 45 , 从 而形成光电流。 光电流经电路流向光电流收集并放大模块 52， 光电流被放 大。 每一所述有机 p II结 43上的光电流经收集并放大后， 最终输出到显示 器件 60上， 形成单色图像。 每一所述有机 p-n结 43形成的电流大小， 对 应于显示器件 60上对应区域的明暗强度。 所述有机 p型材料为紫外发光
Figure imgf000013_0002
394mii; 所述紫 可以选用五联苯紫外发光材料， 其分子结构
Figure imgf000013_0003
其带隙为 3 48eV， 发 m¾T值为 310誦。
所述有机 n型材料优先选用富勒 生物 （PCBM ) ， 其
Figure imgf000013_0004
电子传输能力及较高的电子亲和势， 其最高已占轨道（HOMO ) 能级为 6.0eV , 最低未占轨道 （LUMO ) 能级为 4。2eV , 载流子迁移率为 10— 3cm2/V · s， 是优良的太阳能电池电子传输材料。
请参阅图 7, 本发明具体的实现过程如下： 紫外成像镜头 20首先滤除 一部分外界紫外光线 70， 然后利用紫外透过滤光片 30将可见光（波长范 围 390nm〜760nm ) 及红外波段的辐射滤 ， 仅剩下 "日盲区" 波段 ( 240mn〜280nm ) 的紫外线， 基于有机 p-n 结的紫外探测器件 40 吸收 "曰盲区" 波段紫外线的辐射光子， 形成激子 82 (电子 -空穴对） ， 在有 机 p材料与有机 n材料的界面处激子 82分离， 电子 86流向阴极， 空穴 84 流向阳极， 电路结构 50 收集该光电流， 并经过放大后， 最终在显示器件 60上呈现出单色的人眼可见的图像。 该图像对比度高， 分辨细节能力强； 该紫外探测器件 40 结构简单、 体积小、 重量轻 制作工艺简单， 生产成 本低， 所需材料便宜， 种类多、 来源广泛且可以通过化学合成制备， 并且 该紫外探测器件 40可制备在柔性衬底上， 可以增大拍摄广角„
综上所述， 本发明的基于有机 P- Ώ 结的紫外探测器件及使用该器件的 紫外图像探测器， 通过有机 p n结吸收紫外线的辐射光子， 形成激子 （电 子空穴对） ， 在有机 p材料与有机 n材料的界面处激子分离， 电子流向阴 极， 空穴流向阳极， 从而形成光电流， 电路结构收集该光电流， 并经过放 大后， 最终在显示器件上呈现出单色的人眼可见的图像， 该图像对比度 高， 分辨细节能力强， 该紫外探测器件结构简单、 体积小、 重量轻、 制作 工艺简单， 生产成本低， 所需材料便宜、 种类多、 来源广泛且可以通过化 学合成制备， 并且该紫外探测器件可制备在柔性衬底上， 可以增大拍摄广 角。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

Figure imgf000015_0001
】、 一种基于有机 p n结的紫外探测器件， 包括： 相对平行设置的有源 玻璃基板与封装玻璃基板、 设于所述有源玻璃基板与封装玻璃基板之间的 数个有机 p- η结、 及设于所述有源玻璃基板与封装玻璃基板的四周边缘区 域的封装材料， 所述数个有机 ρ- η 结在所述有源玻璃基板上呈矩阵式分 布。
2、 如权利要求 1所述的基于有机 ρ η结的紫外探测器件， 其中， 每一 所述有机 ρ η 结包括： 设于有源玻璃基板上的阳极、 设于所述阳极上的有 机材料层、 及设于有机材料层上的阴极， 所述阴极与所述封装玻璃基板相 抵靠。
3 , 如权利要求 2所述的基于有机 ρ-η结的紫外探测器件， 其中， 所述 有机材料层包括有机 ρ型材料和有机 η型材料， 所述有机 ρ型材料为紫外 发光材料； 所述有机 η型材料为富勒烯衍生物， 所述富勒烯衍生物的分子 结构
Figure imgf000015_0002
所述富勒烯衍生物的最高已占轨道能级为 6.0eV, 最低未占轨道能级 为 4.2eV, 载流子迁移率为 I0"3cm2/V ' s。
4、 如权利要求 3所述的基于有机 p-n结的紫外探测器件， 其中， 所述 紫外发光材料为咔唑类紫外发光材料， 所述咔唑类紫外发光材料的分子结 构式为：
Figure imgf000016_0001
咔唑类紫外发光材料的带隙为 3，25eV， 发射光傅峰值为 394nm。
5、 如权利要求 3所述的基于有机 p-n结的紫外探测器件， 其中， 所述
Figure imgf000016_0002
玻璃基板与封装玻璃基板、 设于所述有源玻璃基板与封装玻璃基
数个有机 p- n结、 及设于所述.有源玻璃基板与封装玻璃基板的四周边缘区 ¾ ^τ^¾ ·* 所述数个有机 ρ— 11 结在所述有源玻璃基板上呈. 有机 ρ— η结包括： 设于有源玻璃基板上的阳极、 设于 ,的有机材料层、 及设于有机材料层上的阴极， 所述阴极与所述 封装玻璃基板相抵靠。
7、 如权利要求 6所述的基于有机 ρ-η结的紫外探测器件， 其中， 所述 有机材料层包括有机 型材料和有机 η型材料， 所述有机 ρ型材料为紫外 发光材料； 所述有机 η型材料为富勒烯衍生物， 所述富勒烯衍生物的分子 结构式为：
Figure imgf000017_0001
所述五联苯紫外发光材料的带隙为 3，48eV: 发 .4†光 鋒值为 310nm。
10、 一种使用基于有机 P- 11 U '外图像探测器， 包
Figure imgf000017_0002
安装于所述壳体上的紫外成像镜头 对 像镜头设置的紫外透过滤光片、 安装于 .壳体内并相对所述 紫外透过滤光片设置的基于有机 p n结的紫外探测器件、 安装于所述壳体 内并与所述基于有机 p- n结的紫外探测器件电性连接的电路结构、 及安装 于所述壳体上并与所述电路结构电性连接的显示器件， 所述基于有机 P- 11 结的紫外探测器件包括： 相对平行设置的有源玻璃基板与封装玻璃基板、 设于所述有源玻璃基板与封装玻璃基板之间的数个有机 p n 结、 及设于所 述有源玻璃基板与封装玻璃基板的四周边缘区域的封装材料， 所述数个有 机 p- n结在所述.有源玻璃基板上呈矩阵式分布。
11、 如权利要求 10所述的使用基于有机 p-n结的紫外探测器件的紫外 图像探测器， 其中， 所述基于有机 p-n 结的紫外探测器件的有源玻璃基板 朝向紫外透过滤光片设置， 所述壳体设有第一开口及第二开口， 所述紫外 成像镜头与紫外透过滤光片均安装于所述第一开口上且所述紫外透过滤光 片安装于所述紫外成像镜头后方， 所述显示器件安装于所述第二开口上； 所述电路结构包括： 与所述 于有机 p- n结的紫外探测器件电性连接 的光电流收集并放大模块、 及与光电流收集并放大模块电性连接的显示驱 动模块， 所述显示驱动模块还与所述显示器件电性连.接。
】2、 如权利要求 10所述的使用基于有机 p n结的紫外探测器件的紫外 图像探测器， 其中， 每一所述有机 P- n 结包括： 设于有源玻璃基板上的阳 极， 设于所述阳极上的有机材料层、 及设于有机材料层上的阴极， 所述阴 极与所述封装玻璃基板相抵靠； 所述有机材料层包括有机 型材料和有机 n型材料， 所述有机 p型材料为紫外发光材料； 所述有机 n型材料为富勒 烯衍生 ， 所述富勒烯衍生物的分子结构式为：
Figure imgf000018_0001
所述富勒烯衍生物的最高已占轨道能级为 6,0eV, 最低未占轨道能级 为 4.2eV, 载流子迁移率为 iO—3cm2/'V ' s。 13、 如权利要求
图像探测器， 其中， 所述 唾 类紫
Figure imgf000019_0001
3,25eV, 发射光潘峰值为 394nm。
14、 如权利要求
图像探测器， 其中，
Figure imgf000019_0002
， 所述五联 苯紫外发光材料的分子结构式为:
Figure imgf000019_0003
所述五联苯紫外发光 隙为 3.48eV, 发射光借峰值为 310謹。
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