WO2015067665A1 - Dispositif de traitement sous vide de substrats dans une installation de revêtement sous vide et installation de revêtement sous vide équipée d'un dispositif - Google Patents

Dispositif de traitement sous vide de substrats dans une installation de revêtement sous vide et installation de revêtement sous vide équipée d'un dispositif Download PDF

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Publication number
WO2015067665A1
WO2015067665A1 PCT/EP2014/073833 EP2014073833W WO2015067665A1 WO 2015067665 A1 WO2015067665 A1 WO 2015067665A1 EP 2014073833 W EP2014073833 W EP 2014073833W WO 2015067665 A1 WO2015067665 A1 WO 2015067665A1
Authority
WO
WIPO (PCT)
Prior art keywords
vacuum
suction
substrates
coating system
substrate carrier
Prior art date
Application number
PCT/EP2014/073833
Other languages
German (de)
English (en)
Inventor
Andreas Caspari
Gerd Ickes
Torsten Schmauder
Urban LUDGER
André HERZOG
Peter Sauer
Original Assignee
Leybold Optics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics Gmbh filed Critical Leybold Optics Gmbh
Publication of WO2015067665A1 publication Critical patent/WO2015067665A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Definitions

  • the invention relates to a device for vacuum treatment of substrates in one
  • Devices for metallizing substrates with a vacuum chamber in which at least one evaporator source, and devices for applying plasma-polymerized
  • the evacuation of the vacuum chamber in particular the extraction of process gases and process emissions by means of vacuum pumps, which are connected via a central opening to the vacuum chamber, so that different substrates are exposed to significantly different process conditions and consequently coatings with different quality (different layer properties) are generated.
  • Object of the present invention is a device for vacuum treatment of
  • Layers can be applied homogeneously to substrates with high quality, short batch time and high productivity.
  • an object of the invention to provide a compact vacuum chamber, which allows a flexible process management by a space-saving design.
  • the object is achieved with the feature of the independent claims.
  • Advantageous embodiments can be found in the dependent claims, the description and the figures.
  • the device according to the invention for vacuum coating substrates in a vacuum chamber by means of at least one treatment source comprises at least one
  • Substrate carrier device for holding one or more substrates, wherein the
  • Substrate carrier device has a longitudinal axis, a supply device for process gas and at least one suction device having one or more suction openings for gases and at least one, connected to the one or more suction openings pump.
  • the one or more suction openings have an area of action which extends at least twice as far along a longitudinal axis of the substrate carrier device as in a direction perpendicular thereto.
  • the present invention allows to improve the uniformity of vacuum suction, process gas supply and coating flow over an elongated substrate support device over the known solutions.
  • the present invention allows to improve the uniformity of vacuum suction, process gas supply and coating flow over an elongated substrate support device over the known solutions.
  • Substrate support means comprise one or more cylindrical, rotating substrate carrier ("pylon"), whereby the cycle time of such a machine can be lowered with improved coating quality and thus their productivity can be increased.
  • pylon cylindrical, rotating substrate carrier
  • a coating of substrates can along with along the longitudinal extent of
  • the substrate carrier device can be arranged vertically, which spatially enables a relatively small-area vacuum coating system that can make good use of an existing room height. So can typical pylons as
  • Substrate carriers have heights in the meter range.
  • the term vertical refers to the vacuum chamber as a reference system.
  • quality refers to parameters of the properties of the coating, in particular a layer thickness, chemical resistance, a reflection factor and / or a color impression.
  • the device according to the invention is particularly suitable for use in so-called batch vacuum coating systems for carrying out a plurality of coating steps
  • Require pump configurations wherein to be coated substrates (workpieces) are arranged on an extended area of a substrate support means.
  • the device is particularly suitable for the vacuum metallization of three-dimensional molded parts, for example vehicle lamp reflectors or the like.
  • batch batch vacuum coating systems of this type are used in which all the steps necessary for coating are carried out in succession in a single vacuum chamber and the vacuum chamber is flooded after each process run.
  • such systems have several substrates to be coated in the same process run.
  • a suction power can be generated, which varies only slightly along the longitudinal extent of the substrate carrier device.
  • the invention makes it possible to realize the suction power of the vacuum pumps as uniformly as possible for all workpieces on the substrate carrier device. This can be achieved for various sequential coating steps, which may require different vacuum pumps, so that the suction power of each necessary
  • the suction device can be at least two
  • High vacuum pumps comprise, which are spatially distributed, in particular parallel to the longitudinal axis of the substrate support means, are arranged. Additionally or alternatively, at least two corresponding spatially distributed Vorvakuum boots be provided.
  • the suction device is associated with a suction surface, wherein the suction surface is arranged parallel to the longitudinal axis of the substrate carrier device.
  • the suction surface can be elongated parallel to the longitudinal direction of the substrate carrier device
  • the suction surface may have an extent along the longitudinal axis of at least 50% of a longitudinal extent of the substrate carrier device.
  • a pipe connection leading to the vacuum pumps can be elongated along the longitudinal axis of the substrate support device.
  • Substrate support means have opposite suction surface, which extends along a longitudinal axis of the substrate support means at least twice as far as in a direction perpendicular thereto.
  • the multiple suction openings of the Substrate support means have opposite suction surfaces, the total surface extends along a longitudinal axis of the substrate support means at least twice as far as in a direction perpendicular thereto.
  • a suction power can be generated by the suction device at the location of the substrate carrier device, so that the vacuum treatment of substrates of the substrate carrier device taking place by means of the treatment source along the longitudinal extension of the
  • Substrate carrier device can be made with the same quality.
  • quality refers to parameters of the properties of the coating, in particular a layer thickness, a reflection factor and / or a color impression.
  • the suction device may comprise at least two high-vacuum pumps and / or at least two pre-vacuum devices, which are arranged spatially distributed.
  • this elongated suction opening to the one or more vacuum pumps, they can preferably be divided into a plurality of small units and distributed over the length of the suction opening.
  • Both turbomolecular pumps and oil diffusion pumps can be used.
  • Several smaller pumps can be used, the possible additional costs can be overcompensated by cost savings on the system, such as saving large-volume equipment parts and valves, vacuum lines and the like.
  • Vorvakuumpumpen which can be used for pumping out of atmosphere and for plasma processes, similarly elongated distributed to the
  • Vacuum chamber be connected.
  • a space required by the elongate closure in the vacuum chamber can be advantageously used.
  • a vacuum coating system in which a device according to the invention for the vacuum treatment of substrates in one
  • Vacuum chamber wherein a suction device is provided which has a suction adapted to a structure of a substrate carrier device.
  • the suction means forms a flow sink for the process gas and the evacuation occurring gases - such as those desorbing from substrates or chamber walls, which extends along a longitudinal axis of a substrate support means at least twice as far as in a direction perpendicular thereto. This allows a uniform distribution of the supplied gases
  • the vacuum coating system may be a so-called batch vacuum coating system in which all steps necessary for coating are carried out in succession in a single vacuum chamber.
  • the vacuum chamber can after each
  • all the required coating tools can be located, such as a plasma source for smoldering or deposition of a plasma CVD topcoat, steam or sputter sources for the actual metallization, as well as connections for the process gas supply of the individual process steps and for - in particular for various Steps different - Vacuum pumps.
  • a plasma source for smoldering or deposition of a plasma CVD topcoat steam or sputter sources for the actual metallization
  • connections for the process gas supply of the individual process steps and for - in particular for various Steps different - Vacuum pumps can be arranged on the substrate carrier unit.
  • these - e.g. with the help of a rotating substrate carrier device - are moved past the respective active coating source.
  • the suction power of the suction device can be realized as uniformly as possible for all workpieces.
  • a gas supply can be realized as uniformly as possible along the longitudinal extension of the substrate carrier unit.
  • suction power coupling to the vacuum chamber in two coating phases is critical for a uniform layer quality:
  • PVD Physical Vapor Deposition, such as sputtering or thermal evaporation
  • Coating steps with plasma deposition (CVD, Chemical Vapor Deposition) with a process atmosphere of process gases and exhaust gases which is as uniform as possible in the region of the substrates.
  • a uniform connection of the vacuum suction capacity to the entire surface of the substrate carrier unit can be achieved. This can be prevented, for example, pumping times or a layer quality significantly by the most unfavorable Substrate can be influenced on the substrate carrier device.
  • PVD processes use high vacuum pumps.
  • Substrate surfaces escaping water vapor can be effectively pumped out.
  • Lateral surface of the substrate carrier device e.g. a pylon, which is also needed for the arrangement of the coating sources.
  • a single large pipe connection is provided for pumping in a high vacuum. This leads to uneven pumping of water vapor in particular - this condenses (adsorbed) on wall areas, which are far away from the pipe connection.
  • an extended pumping time is required, which extends the cycle time of the entire system and reduces its productivity.
  • plasma processes such as plasma CVD for depositing a corrosion protection layer
  • plasma CVD for depositing a corrosion protection layer
  • This process requires the inflow and outflow of process gas or process exhaust evenly for all substrates. Otherwise, there will be long residence times of reactive gas and ultimately the formation of dust deposits.
  • the suction device may comprise at least two high-vacuum pumps and / or Vorvakuum boots, which are arranged spatially distributed, in particular parallel to the longitudinal axis of the substrate carrier device.
  • the suction device may comprise at least one closure for a closable suction opening, wherein the closable suction opening is arranged parallel to the longitudinal axis of the substrate carrier device.
  • This allows an advantageous arrangement of the suction device.
  • protective valves are required between the vacuum chamber flooded after each process run and the high-vacuum pumps or cold traps to be protected. These valves are usually very expensive for large pipe sections and thus expensive, as well as cumbersome and bulky.
  • valve plate If the valve plate is swiveled out perpendicularly to the cross-section to be blocked, the arrangement consumes at least twice the tube cross-sectional area on said, scarce lateral surface of the substrate carrier device, if the valve plate is rotated perpendicular to the surface to be blocked, it stands in the chamber and reduces the usable volume for the substrate carrier device.
  • the at least one closure may be formed by a flap which is elongated in the longitudinal direction of the substrate carrier device and which in the opened state projects only slightly into the chamber volume.
  • the flap can also be divided into two or more longitudinally divided wings. It is also conceivable a slide or more slide as a closure.
  • the same closure can advantageously - if the process control provided permits - at the same time shut off a high-vacuum pump and / or a cold trap when the vacuum chamber is vented.
  • Vacuum cleaning be provided on the substrate support means arranged substrates, wherein preferably the treatment source is one of the substrate support means
  • Substrate support means arranged substrates may be provided, wherein preferably the material source has a longitudinal extent corresponding to the substrate support means.
  • the emission characteristic of the material source can advantageously correspond to the longitudinal extent of the substrate carrier device and / or the extent of the flow depression of the suction device.
  • the material source can be arranged in consideration of their spatial radiation characteristics.
  • an evaporator element is here understood the angular dependence of the current density of the vaporized material of a built-in the evaporator bank.
  • the at least one source of material may be interchangeable with another source of material.
  • various sputter sources can be used, such as planar cathodes and tube cathodes, which can be exchanged between coating steps.
  • At least two different types of vacuum pump may be provided to at least two coating steps, each with different
  • Vacuum pump types such as high vacuum pumps for sputter coatings and backing pumps for CVD processes.
  • at least two different material sources can be provided in the vacuum chamber. Due to the elongated connection of the suction device is more space on the lateral surface of the particular about its longitudinal axis rotatable substrate support means, so that additional material sources can be provided, such as additional plasma source electrodes for accelerating plasma processes, additional sputtering sources to increase the flexibility of the vacuum coating system and the like.
  • Substrate support means arranged substrates may be provided, e.g. for accelerating the release of water vapor bound to the substrate surfaces for faster achievement of a suitable base pressure for the metallization of the substrates.
  • Suction power distribution of the suction device are formed at the location of the substrate carrier device.
  • Material sources may be designed to be elongate analogous to the suction power distribution on the substrate carrier device, in particular the lateral surface of a pylon
  • FIG. 1 shows a vacuum coating system according to the invention in longitudinal section with a
  • Figure 2 is a view of a substrate support means in the form of a pylon, with plasma electrodes, suction and radiation heating.
  • FIG. 1 shows a vacuum coating system 100 with a device 1 for the vacuum treatment of substrates in a vacuum chamber 10 with a cut-open housing 11 in order to explain the invention.
  • the device 1 comprises at least one substrate carrier device 60 and a suction device 19.
  • the suction device (19) has a suction opening 80 for gases and pumps 12, 16 connected to the suction opening 80.
  • the suction opening 80 has an effective area which extends parallel to a longitudinal axis 70 of the substrate carrier device 60 at least twice as far as in a direction perpendicular thereto.
  • the pumps are designed as a pre-vacuum device 12 and as a high-vacuum device 16.
  • the substrates are preferably three-dimensional substrates, for example for applications in the automotive sector, computers, communication or consumer electronics or the like.
  • the substrates are preferably made of a plastic material, but other materials are conceivable.
  • a cylindrical substrate support 60 in the form of a pylon serves to receive substrates (not shown).
  • the substrate carrier device 60 has a longitudinal extension 72 in the vertical direction.
  • the longitudinal extent 72 is typically in the range of 150 cm to 200 cm.
  • the substrate carrier device 60 is rotatable about a drivable longitudinal axis 70 as a rotation axis 74 and as a pylon, that is to say as a columnar framework structure.
  • FIG. 1 shows, for the sake of simplicity, no further details of the substrate carrier device 60 and also no substrates recorded by the device 60.
  • the substrate carrier device 60 forms a lateral surface 62. Adjacent to the lateral surface 62, a material source 50 in the form of a planar sputtering cathode 51 is arranged with its longitudinal axis parallel to the longitudinal axis 70 of the substrate carrier device 60. Between the longitudinal axis of the material source 50 and the axis of rotation 74 of the pylon
  • substrate carrier 60 an angular offset of less than 10 ° is provided.
  • material sources 50 in addition to sputtering cathodes also
  • Material source 50 are moved past.
  • the invention also includes devices with more than one substrate support means 60, each with a pylon with support means for substrates. It is advantageous if an angular offset of less than 10 ° is provided between the longitudinal axis of the material source and the axes of rotation of the pylons.
  • the vacuum coating system 100 further comprises a plasma source
  • Treatment source 40 for substrates The plasma source comprises means for exciting a
  • the treatment source 40 in particular plasma source, can be designed for the pretreatment of the substrate surfaces and / or for plasma coating, in particular by means of plasma CVD.
  • an inlet for Reaction gases 64 may be provided.
  • the treatment source 40 comprises an electrode 41 and a counter-electrode 42 and a grounded vacuum container (not shown) for generating a plasma, in particular a glow discharge for treating a surface of one or more substrates to be treated.
  • the electrodes 41, 42 are designed like a plate with a geometry that is essentially elongated parallel to the axis of rotation 74.
  • the treatment source 40 is operated with an alternating voltage, in particular a frequency between 1 Hz and 350 MHz, particularly preferably at 40 kHz.
  • the invention also includes further embodiments, as well as a further number of treatment sources, in particular for performing a plasma CVD process formed plasma sources, with which, for example, a top coat can be applied to a metal layer. It should also be understood that the invention may also include dedicated, separate plasma sources for certain treatments of the substrates. Furthermore, one of the treatment sources for more than one treatment process, such as glow discharge and PECVD can be provided.
  • the dimensioning of the material source 50 and the treatment source 40 in the direction of the axis of rotation 74 is tuned to compensate for spatial end effects, i. In the present case by a certain supernatant of sputter source 51 and treatment source 40 over the end portions of the substrate support means 60. Further, a drop, for example, a coating rate in the end regions of the material source 50 and the substrate support means 60 can be compensated by a corresponding measures, for example by diaphragms in a middle area between the end areas.
  • the suction device 19 forms a flow depression for process gas 64 and provides a suction system adapted to the structure of the substrate carrier device 60, in particular a pylon structure.
  • the flow sink extends at least twice as far along the longitudinal axis 70 of the substrate carrier device 60 as in a direction perpendicular thereto.
  • the flow sink substantially corresponds to a parallel to the longitudinal axis 70 of the
  • Substrate carrier elongated pumping channel 18 to the pumps 16 a, 16 b and
  • Vacuum connections 12a, 12b are connected.
  • the suction device 19 of the embodiment comprises at least two
  • High vacuum pumps 16a, 16b which are spatially distributed parallel to the longitudinal axis 70 and are mounted at the end of the pumping channel 18.
  • a Cold trap 20 provided with openings 21, 22 which release the pump cross-section of the individual pumps 16a, 16b.
  • pre-vacuum ports 12 are provided with outlets 12 a, 12 b at the upper and lower ends of the pumping channel 18.
  • the pumping channel 18 is connected to a
  • the suction opening 80 has one of the substrate support means 60 opposite
  • Extraction surface which extends parallel to the longitudinal axis 70 of the substrate support means 60 at least twice as far as in a direction perpendicular thereto.
  • the suction device has a plurality of suction openings with suction surfaces opposite the substrate support device 60 whose total surface extends at least twice as far parallel to the longitudinal axis 70 of the substrate support device 60 as in a direction perpendicular thereto.
  • the suction device 19 comprises at least one closure 30 for a closable cross section 31, wherein the closable cross section 31 is arranged parallel to the longitudinal axis 70.
  • the cross section 31 preferably corresponds to the cross section of the pumping channel 18.
  • the closure 30 is formed by a plurality of longitudinally divided flaps (only one of which can be seen in the figure), which can close the pumping channel 18 vacuum-tight, if the
  • Vacuum chamber 10 is vented between two process steps.
  • a suction power can be generated at the location of the substrate carrier device 60 which varies along the longitudinal extension 72 of the substrate carrier device 60 by at most 10%.
  • FIG. 2 shows a simplified representation of a view of a substrate support device 60 in the form of a pylon, with electrodes 41, 42 of a treatment source 40 and a suction device 60 and a radiant heater 90, the longitudinal axis 91 parallel to the longitudinal axis 70 of
  • Substrate carrier 60 is arranged.
  • the radiant heater 90 is used for thermal application of the
  • Substrate carrier 60 arranged substrates and accelerated by heating the substrates, the release of bound to the substrate surfaces of water vapor for faster achievement of a suitable base pressure for the metallization of the substrates.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de revêtement sous vide de substrats dans une chambre à vide. L'invention est caractérisée par un dispositif d'aspiration (19) qui comporte un ou plusieurs orifices (80) d'aspiration de gaz et au moins une pompe (12, 16) reliée à l'orifice ou aux orifices d'aspiration (80). L'orifice ou les orifices d'aspiration (80) comportent une zone d'action qui s'étend parallèlement à un axe longitudinal (70) du moyen de support de substrat (60) sur une distance qui est au moins double de celle dans une direction perpendiculaire audit axe longitudinal. En outre, l'invention concerne un moyen de revêtement sous vide servant à effectuer le revêtement sous vide à l'aide du dispositif.
PCT/EP2014/073833 2013-11-06 2014-11-05 Dispositif de traitement sous vide de substrats dans une installation de revêtement sous vide et installation de revêtement sous vide équipée d'un dispositif WO2015067665A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013112180.2 2013-11-06
DE102013112180 2013-11-06

Publications (1)

Publication Number Publication Date
WO2015067665A1 true WO2015067665A1 (fr) 2015-05-14

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TW (1) TW201522693A (fr)
WO (1) WO2015067665A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017077106A1 (fr) * 2015-11-05 2017-05-11 Bühler Alzenau Gmbh Dispositif et procédé de dépôt sous vide

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731688A1 (de) 1987-09-21 1989-03-30 Degussa Verfahren zur katalytischen umsetzung von kohlenwasserstoff, halogenkohlenwasserstoff und kohlenmonoxid enthaltenden abgasen
US20050074983A1 (en) * 2002-03-26 2005-04-07 Tokyo Electron Limited Substrate processing apparatus and substrate processing method, high speed rotary valve, and cleaning method
EP1947211A1 (fr) 2006-12-05 2008-07-23 Galileo Vacuum Systems S.p.A. Dispositif de métallisation sous vide
CN201971892U (zh) * 2011-01-17 2011-09-14 东莞市汇成真空科技有限公司 一种用于真空镀膜机均匀抽气的抽气口及其接头
US20110312188A1 (en) * 2010-06-18 2011-12-22 Tokyo Electron Limited Processing apparatus and film forming method
WO2012010318A1 (fr) 2010-07-23 2012-01-26 Leybold Optics Gmbh Dispositif et procédé de dépôt sous vide

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731688A1 (de) 1987-09-21 1989-03-30 Degussa Verfahren zur katalytischen umsetzung von kohlenwasserstoff, halogenkohlenwasserstoff und kohlenmonoxid enthaltenden abgasen
US20050074983A1 (en) * 2002-03-26 2005-04-07 Tokyo Electron Limited Substrate processing apparatus and substrate processing method, high speed rotary valve, and cleaning method
EP1947211A1 (fr) 2006-12-05 2008-07-23 Galileo Vacuum Systems S.p.A. Dispositif de métallisation sous vide
US20110312188A1 (en) * 2010-06-18 2011-12-22 Tokyo Electron Limited Processing apparatus and film forming method
WO2012010318A1 (fr) 2010-07-23 2012-01-26 Leybold Optics Gmbh Dispositif et procédé de dépôt sous vide
CN201971892U (zh) * 2011-01-17 2011-09-14 东莞市汇成真空科技有限公司 一种用于真空镀膜机均匀抽气的抽气口及其接头

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017077106A1 (fr) * 2015-11-05 2017-05-11 Bühler Alzenau Gmbh Dispositif et procédé de dépôt sous vide
CN108699690A (zh) * 2015-11-05 2018-10-23 布勒阿尔策瑙有限责任公司 用于真空涂覆的装置和方法
CN108699690B (zh) * 2015-11-05 2021-07-09 布勒阿尔策瑙有限责任公司 用于真空涂覆的装置和方法
US11155921B2 (en) 2015-11-05 2021-10-26 Bühler Alzenau Gmbh Device and method for vacuum coating

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