WO2015064961A1 - Film conducteur anisotrope et dispositif à semi-conducteur l'utilisant - Google Patents

Film conducteur anisotrope et dispositif à semi-conducteur l'utilisant Download PDF

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WO2015064961A1
WO2015064961A1 PCT/KR2014/010041 KR2014010041W WO2015064961A1 WO 2015064961 A1 WO2015064961 A1 WO 2015064961A1 KR 2014010041 W KR2014010041 W KR 2014010041W WO 2015064961 A1 WO2015064961 A1 WO 2015064961A1
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conductive film
anisotropic conductive
electrode
particles
mpa
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PCT/KR2014/010041
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English (en)
Korean (ko)
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황자영
김지연
박경수
정광진
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삼성에스디아이 주식회사
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Priority to KR1020167007492A priority Critical patent/KR101943718B1/ko
Priority to CN201480059674.7A priority patent/CN105706183B/zh
Publication of WO2015064961A1 publication Critical patent/WO2015064961A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Definitions

  • the present invention relates to an anisotropic conductive film and a semiconductor device using the same.
  • Anisotropic conductive film is generally obtained by dispersing conductive particles such as metal particles such as nickel (Ni) and gold (Au), or polymer particles coated with such metals in a resin such as epoxy.
  • conductive particles such as metal particles such as nickel (Ni) and gold (Au)
  • polymer particles coated with such metals in a resin such as epoxy.
  • the film-shaped adhesive agent it means the polymer film
  • the space between the circuit electrodes is electrically connected by the conductive particles and is a space generated between the electrodes.
  • the insulating portion is filled with an insulating adhesive resin so that the conductive particles exist independently of each other, thereby providing high insulation.
  • the conductive particles are pressed and the connection characteristics are expressed.
  • the flow of the adhesive composition including the conductive particles is generated by the heat and pressure in the heat compression process.
  • the particles are not located between the circuit electrodes, and the particle efficiency for expressing connection characteristics between the electrodes is extremely low.
  • a portion of the adhesive composition including the conductive particles flows into an adjacent space (space portion), so that conductive particles are collected in a narrow area, causing short or increasing connection resistance.
  • the problem to be solved by the present invention is an ultra-low flow anisotropic conductive film that can prevent the short after improving the density of the conductive particles that are pressed to the electrode portion between the electrodes after the heat-compression step, the density of the conductive particles in the space portion and the same It is to provide a used semiconductor device.
  • the present invention also provides an ultra-low flow anisotropic conductive film having improved cost reduction effect and connection characteristics by controlling the conductive particle density of the electrode portion and the conductive particle density of the space portion, and a semiconductor device using the same.
  • the present invention is to provide an ultra-low flow anisotropic conductive film with improved connection characteristics by adjusting the content of the inorganic particles and a semiconductor device using the same.
  • the ratio (X: Y) of the electrode portion conductive particle density (X) and the space portion conductive particle density (Y) is 1: 1 to 1:10, and X is an anisotropic conductive film.
  • a glass substrate comprising a first electrode and a COF
  • an IC driver chip or an IC chip comprising a second electrode, at a condition of 50 °C to 90 °C, 1 second to 5 seconds, 1.0 MPa to 5.0 MPa
  • Y is a semiconductor device, wherein the density of the conductive particles present in the space portion measured after the main compression.
  • the total conductive particles 5 to 20% by weight based on the total weight of the anisotropic conductive film solids; And an insulating layer formed on one or both surfaces of the conductive layer, wherein the amount of the conductive particles and the insulating particles included in the conductive layer is included in the insulating layer. It provides an anisotropic conductive film more than the content of the insulating particles (% by weight).
  • the first connected member containing the first electrode; A second to-be-connected member containing a second electrode; And an anisotropic conductive film according to an embodiment of the present invention, wherein the anisotropic conductive film is disposed between the first to-be-connected member and the second to-be-connected member to connect the first electrode and the second electrode.
  • a semiconductor device is provided.
  • the present invention not only can provide an anisotropic conductive film including a conductive layer exhibiting ultra-low flow rate by controlling the content of the insulating particles, but also improves the flow of the insulating layer composition, thereby exhibiting an effect of preventing shorting of the electrode. .
  • this invention adjusts the density of the electroconductive particle of the electrode part, and the density of the electroconductive particle of the space part, and shows the effect which can improve the connection characteristic of an anisotropic conductive film.
  • FIG. 1 illustrates a semiconductor device connected by an anisotropic conductive film according to an example of the present invention.
  • FIG. 2 is a micrograph showing an electrode portion A and a space portion B, and conductive particles 1 present in the space portion B without being pressed against the conductive particles 1 'compressed on the electrode A.
  • FIG. '' Is a photomicrograph.
  • FIG. 3 is a micrograph showing the conductive particles 1 '' existing in the space portion B without being compressed by enlarging the space portion B of the micrograph of FIG. 2.
  • FIG. 4 is a conceptual diagram illustrating a minimum melt viscosity of an arbitrary layer of an anisotropic conductive film according to an example of the present invention and a method of measuring the same.
  • the first to-be-connected member 50 containing the first electrode 70 and the second to-be-connected member 60 including the second electrode 80 are anisotropic conductive films 10 containing conductive particles 40. Is connected by.
  • connection is attached so that one surface of the anisotropic conductive film 10 is in contact with the first electrode 70 formed on the first to-be-connected member 50, and the other surface of the anisotropic conductive film 10 is the second electrode.
  • the first electrode 60 is loaded through the conductive particles 40 contained in the anisotropic conductive film 10 by loading, heating and pressurizing the second to-be-connected member 60 having the second electrode 80 to contact the 80. 70 and the second electrode 80 are electrically connected.
  • the first to-be-connected member and the second to-be-connected member are not particularly limited, and those known in the art may be used.
  • the first to-be-connected member may be a glass substrate, a printed circuit board (PCB) or a flexible printed circuit board (fPCB), and the second to-be-connected member may be, for example, a semiconductor silicon chip or a chip on film), an IC chip, or an IC driver chip.
  • PCB printed circuit board
  • fPCB flexible printed circuit board
  • the second to-be-connected member may be, for example, a semiconductor silicon chip or a chip on film), an IC chip, or an IC driver chip.
  • the first electrode or the second electrode may be in the form of a protruding electrode or a planar electrode, and each of the first electrode or the second electrode may independently be indium tin oxide (ITO), copper, silicon, or indium zinc oxide (IZO). ), But is not limited thereto.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the method of manufacturing the semiconductor device according to an embodiment of the present invention is not particularly limited and may be performed by a method known in the art.
  • the ratio (X: Y) of the electrode portion conductive particle density (X) and the space portion conductive particle density (Y) is 1: 1 to 1:10, and X is an anisotropic conductive film.
  • a glass substrate comprising a first electrode and a COF
  • an IC driver chip or an IC chip comprising a second electrode, at a condition of 50 °C to 90 °C, 1 second to 5 seconds, 1.0 MPa to 5.0 MPa
  • the Y may be a semiconductor device having a density of conductive particles present in the space portion measured after the main compression.
  • X: Y may be 1: 1 to 1: 9, may be 1: 1 to 1: 8, may be 1: 1 to 1: 7, more specifically, 1: 1 to 1 : 6, and may be 1: 1 to 1: 5, for example, 1: 1 to 1: 4.
  • the conductive particles are mainly positioned between the first electrode and the second electrode (electrode part) to be compressed (A). At this time, the flow of each layer is generated by the heat and pressure applied during the connection process, so that the conductive particles B leaked into the next space (space portion) which are not compressed and do not face the first electrode and the second electrode. Can be.
  • the density of the conductive particles (B) present in the space portion without being pressed against the conductive particles (A) present in the electrode portion between the first electrode and the second electrode and pressed between the electrodes (piece / ⁇ 2 ) By measuring X and Y, respectively, the density ratio (X: Y) can be calculated (see FIGS. 2 and 3).
  • the pressing temperature may be 50 °C to 80 °C, for example 50 °C to 70 °C
  • the pressing time may be 1 second to 3 seconds, for example, 1 second to 2 seconds
  • pressurized Optical illusion pressure conditions may be 1.0 MPa to 3.0 MPa, for example, 1 MPa to 2 MPa.
  • the main compression temperature may be 175 ° C. to 185 ° C.
  • the main compression time may be 5.5 seconds to 6.5 seconds
  • the pressure conditions at the time of main compression may be 65 MPa to 75 MPa.
  • a non-limiting example of how to measure) is as follows: Each anisotropic conductive film was subjected to a glass substrate with an indium tin oxide (ITO) circuit having a bump area of 2000 ⁇ m 2 and a thickness of 5000 ⁇ s and a bump area of 2000 ⁇ m 2 , thickness 1.7
  • ITO indium tin oxide
  • the microscope observes the microscope to measure the number of particles on the bump per unit area ( ⁇ m 2 ) and the number of particles present in the inter-electrode space to measure the density X and Y, respectively.
  • an anisotropic conductive film between any one of a glass substrate including a first electrode and a COF, an IC driver chip or an IC chip comprising a second electrode, 50 °C to 90 °C,
  • the connection resistance of the anisotropic conductive film measured after the main compression under the conditions of 1 second to 5 seconds, 1.0 MPa to 5.0 MPa, followed by pressing at 170 ° C to 190 ° C, 5 seconds to 7 seconds, and 60 MPa to 80 MPa.
  • This may be less than 0.5 ⁇ , specifically, may be greater than 0 ⁇ to less than 0.5 ⁇ , for example, greater than 0 ⁇ to less than 0.3 ⁇ .
  • the method for measuring the connection resistance is not particularly limited, and non-limiting examples are as follows: After each of the anisotropic conductive films is left at room temperature (25 ° C.) for 1 hour, the ITO layer is coated at 1000 t with 0.5 t glass. Using COF (Samsung Electronics) in which a 4-terminal measurement pattern was formed on a glass without a pattern, the upper and lower interfaces of the anisotropic conductive film were pressed at a measurement temperature of 60 ° C. for 1 second, 1 MPa, and 180 ° C. for 6 seconds. 7 specimens of each of the above specimens were prepared by crimping under the crimping condition of 70 MPa, and each of them was measured five times by a four-point probe method (ASTM F43-64T) to calculate an average value.
  • the anisotropic conductive film included in the semiconductor device according to an embodiment of the present invention is 250 hours under the conditions of 85 °C and 85% relative humidity after pressing and main compression under the same conditions and methods as the connection resistance measuring method.
  • the connection resistance may be 7 ⁇ or less. Specifically, it may be greater than 0 ⁇ to 6 ⁇ or less, more specifically, greater than 0 ⁇ to 5 ⁇ or less, for example, greater than 0 ⁇ to 4 ⁇ or less.
  • the anisotropic conductive film included in the semiconductor device according to an embodiment of the present invention is 500 hours under the conditions of 85 ° C and 85% relative humidity after pressing and main bonding under the same conditions and methods as the connection resistance measuring method.
  • the connection resistance may be 15 ⁇ or less. Specifically, it may be greater than 0 ⁇ to 10 ⁇ or less, and more specifically, greater than 0 ⁇ to 7 ⁇ or less.
  • connection resistance even under high temperature and high humidity conditions in the above range, and to improve connection reliability, and to provide a semiconductor device connected by an anisotropic conductive film having a stable reliability resistance, under high temperature and / or high humidity conditions.
  • anisotropic conductive film having a stable reliability resistance, under high temperature and / or high humidity conditions.
  • the method for measuring the connection resistance after the reliability evaluation is not particularly limited and non-limiting examples are as follows: after performing crimping and main compression under the connection resistance measurement conditions, 250 under the conditions of a temperature of 85 ° C. and a relative humidity of 85%. After leaving for a period of time and 500 hours to conduct high temperature and high humidity reliability evaluation, the connection resistance is measured after each of these reliability evaluations, and an average value is calculated.
  • the anisotropic conductive film includes a conductive layer containing conductive particles; And an insulating layer.
  • the conductive layer includes conductive particles to electrically connect the first electrode and the second electrode during main compression, and the insulating layer does not contain conductive particles, and each of the first substrate on which the first electrode is formed
  • the second electrode is disposed to be in contact with the second substrate on which the second electrode is formed and serves to secure insulation between adjacent electrodes.
  • the anisotropic conductive film according to an embodiment of the present invention may have a structure in which an insulating layer is laminated on one or both surfaces of the conductive layer. That is, a two-layer structure in which a conductive layer and an insulating layer are laminated or a conductive layer may be laminated in an insulating layer, and the insulating layer may be a three-layer structure in which the insulating layer is laminated. It may be a multilayer structure laminated in layers or more.
  • laminate means that another layer is formed on one surface of an arbitrary layer, and may be used in combination with a coating or lamination.
  • an anisotropic conductive film having a multilayer structure including a conductive layer and an insulating layer separately even if the content of the insulating particles (eg, silica) is high because the layers are separated, it does not interfere with the crimping of the conductive particles, thus affecting the conductivity. Without affecting the flowability of the adhesive composition, an ultra low flow anisotropic conductive film can be produced.
  • the insulating particles eg, silica
  • the minimum melt viscosity of the conductive layer included in the anisotropic conductive film according to an embodiment of the present invention may be higher than the minimum melt viscosity of the insulating layer included in the anisotropic conductive film.
  • the lowest melt viscosity of the conductive layer may be 10 3 Pa.s to 10 7 Pa.s, and specifically, may range from 10 5 Pa.s to 10 6 Pa.s.
  • the outflow of the conductive particles in the conductive layer is reduced to the space portion between the electrodes in the crimping process, and thus the connection resistance can be improved, and the insulating layer between the terminals can be sufficiently filled to improve the connection reliability.
  • the minimum melt viscosity of the insulating layer may be lower than the minimum melt viscosity of the conductive layer, specifically, the minimum melt viscosity of the insulating layer may be 10 2 Pa.s to 10 4 Pa.s.
  • the viscosity gradually decreases due to the temperature rise in the initial stage (A 1 section), and when a certain time (T 0 ) is reached, the adhesive melts to exhibit the lowest viscosity ( ⁇ 0 ).
  • T 0 time
  • the viscosity gradually increases, and when the curing is completed (A 3 sections), the viscosity is generally kept constant.
  • the viscosity at the temperature T 0 ⁇ 0 means "lowest melt viscosity".
  • melt viscosity means the lowest melt viscosity value of the melt viscosity values of any layer measured using ARES (Advanced Rheometric Expansion System).
  • the lowest melt viscosity of each layer can be controlled by the composition of each layer, specifically by the content of the insulating particles.
  • the conductive layer according to an embodiment of the present invention may include a binder resin, an epoxy resin, a curing agent, conductive particles, and insulating particles
  • the insulating layer may include a binder resin, an epoxy resin, a curing agent, and insulating particles.
  • the binder resin used in one embodiment of the present invention is not particularly limited, and resins commonly used in the art may be used.
  • Non-limiting examples of the binder resin include polyimide resin, polyamide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, polyester resin, polyester urethane resin, polyvinyl butyral resin , Styrene-butylene-styrene (SBS) resin and epoxy modified body, styrene-ethylene-butylene-styrene (SEBS) resin and its modified body, or acrylonitrile butadiene rubber (NBR) and its hydrogenated body Etc.
  • SBS Styrene-butylene-styrene
  • SEBS styrene-ethylene-butylene-styrene
  • NBR acrylonitrile butadiene rubber
  • the binder resin may be contained in an amount of 1 wt% to 60 wt%, specifically 1 wt% to 50 wt%, and more specifically 5 wt% to 40 wt%, based on the total weight of the insulating layer solids. For example, it may be contained in 10% by weight to 30% by weight.
  • the conductive layer solids may be contained in 1% by weight to 50% by weight, specifically 5% by weight to 50% by weight, more specifically 5% by weight to 40% by weight, for example For example, it may be contained in 5% by weight to 30% by weight.
  • the flowability and adhesion of the layer may be improved and the melt viscosity of each layer may be adjusted.
  • the epoxy resin may include one or more epoxy monomers, epoxy oligomers and epoxy polymers selected from the group consisting of bisphenol, novolak, glycidyl, aliphatic and cycloaliphatic.
  • epoxy resins can be used without particular limitation as long as they include at least one bond structure that can be selected from among the known epoxy-based molecular structures such as bisphenol, novolak, glycidyl, aliphatic and alicyclic. have.
  • Epoxy resins that are solid at room temperature include phenol novolac epoxy resins, cresol novolac epoxy resins, and dicyclo pentadiene epoxy resins, bisphenol A Type or F-type polymer or modified epoxy resin, but is not limited thereto.
  • liquid epoxy resin at room temperature examples include bisphenol A or F or mixed epoxy resin, but are not necessarily limited thereto.
  • Non-limiting examples of the flexible epoxy resins include dimer acid-modified epoxy resins, epoxy resins based on propylene glycol, urethane (urethane) modified epoxy resins, and the like.
  • one or more selected from the group consisting of naphthalene-based, anthracene-based and pyrene-based resins may be used as the aromatic epoxy resin, but the present invention is not limited thereto. Specifically, the epoxy and the slow epoxy react rapidly with the molecular weight and the functional group. Can be used.
  • the epoxy resin may be contained in an amount of 10% by weight to 80% by weight, specifically 20% by weight to 80% by weight, and more specifically 30% by weight to 80% by weight, based on the total weight of the insulating layer solids. For example, it may contain 40% to 60% by weight.
  • the conductive layer solids may be contained in 1% by weight to 50% by weight, specifically 5% by weight to 50% by weight, more specifically 5% by weight to 40% by weight, for example For example, it may be contained in 5% by weight to 30% by weight.
  • the curing agent may be used without particular limitation as long as it is a curing agent of the epoxy curing type known in the art, and non-limiting examples include acid anhydride, amine, imidazole, isocyanate, amide, hydrazide, phenol, Cationic systems and the like can be used, and these can be used alone or in combination of two or more.
  • the curing agent may be cationic, and examples thereof include ammonium / antimony hexafluoride and the like.
  • the curing agent Since the curing agent is used by mixing with the epoxy resin at room temperature, it should not have reactivity with the epoxy resin at room temperature after mixing, it has to be active at a certain temperature or more to be active with the epoxy resin to be expressed physical properties.
  • the curing agent can be used as long as it is a compound capable of generating a cation by thermal activation energy, without limitation, for example, a cationic latent curing agent can be used.
  • the cationic latent curing agent includes onium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic sulfonium salts, aromatic iodine aluminum salts, phosphonium salts, pyridinium salts, and serenium salts; Complex compounds such as metal arene complexes and silanol / aluminum complexes; Compounds having an electron capturing function, including tosyreto groups such as benzoin tosylato- and o-nitrobenzyl tosylato-, may be used.
  • onium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic sulfonium salts, aromatic iodine aluminum salts, phosphonium salts, pyridinium salts, and serenium salts
  • Complex compounds such as metal arene complexes and silanol / aluminum complexes
  • sulfonium salt compounds such as aromatic sulfonium salt compounds or aliphatic sulfonium salt compounds having high cation generation efficiency can be used.
  • a cationic latent curing agent forms a salt structure
  • hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt.
  • hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt.
  • hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenyl borate, or the like may be used as a counter ion when forming a reactive side salt.
  • the curing agent may be contained in an amount of 1% to 30% by weight, specifically 1% to 20% by weight, and more specifically 1% to 10% by weight, based on the total weight of solids of the insulating layer. It may be contained as.
  • the curing agent may be contained in an amount of 1% to 30% by weight, specifically 1% to 20% by weight, and more specifically 1% to 1% by weight, based on the total weight of solids of the conductive layer. It may be contained in 10% by weight.
  • the insulating particles may be inorganic particles, organic particles, or organic / inorganic mixed particles, and may be included in the insulating layer and the conductive layer.
  • the insulating particles may impart recognizability to the anisotropic conductive film and prevent a short between the conductive particles.
  • Non-limiting examples of the inorganic particles silica (Si, SiO 2 ), Al 2 O 3 , TiO 2 , ZnO, MgO, ZrO 2 , PbO, Bi 2 O 3 , MoO 3 , V 2 O 5 , Nb 2 O 5 , Ta 2 O 5 , WO 3 and In 2 O 3 It may be one or more selected from the group consisting of, non-limiting examples of the organic particles include acrylic beads, etc., the organic material on the surface of the inorganic particles Coated organic / inorganic mixed particles may also be used.
  • the insulating particles may be inorganic particles, specifically silica.
  • the silica may be a silica produced by a liquid phase method, such as a sol gel method, a precipitation method, or a gas phase method such as flame oxidation, a non-pulverized silica obtained by pulverizing silica gel, or fumed silica.
  • a liquid phase method such as a sol gel method, a precipitation method, or a gas phase method such as flame oxidation, a non-pulverized silica obtained by pulverizing silica gel, or fumed silica.
  • fused silica may be used, and the shape may be spherical, crushed, edgeless, or the like, but is not limited thereto.
  • Fused silica includes natural silica glass made by melting natural crystal or silica with arc (flame) discharge or oxyhydrogen flame, and synthetic silica glass that synthesizes gaseous materials such as silicon tetrachloride or silane by pyrolysis in oxyhydrogen flame or oxygen plasma. It may include any one or more of.
  • the insulating particles have a larger size (average particle diameter) than the conductive particles, problems may occur in the energization, and thus the insulating particles may be smaller than the conductive particles.
  • the insulating particles may be contained in an amount of 1% to 50% by weight, specifically 5% to 50% by weight, and more specifically 5% to 40% by weight, based on the total weight of solids of the insulating layer. For example, it may be contained in 10 to 40% by weight, 20 to 35% by weight.
  • the content of the insulating particles included in the conductive layer with respect to the total weight of the conductive layer solids may be contained 20% by weight or more, specifically 25% to 85% by weight, more specifically 25% by weight To 80% by weight, for example 25% to 75% by weight, 25% to 65% by weight.
  • the total amount of the insulating particles included in the anisotropic conductive film based on the total weight of the anisotropic conductive film solid content may be 20% by weight or more.
  • the content of the total insulating particles included in the anisotropic conductive film may be 20% by weight to 60% by weight based on the total weight of the anisotropic conductive film solids, specifically, may be 21% by weight to 60% by weight, For example, it may be 22% to 50% by weight.
  • the content of the insulating particles included in the conductive layer based on the total weight of the anisotropic conductive film may be equal to or greater than the content of the included insulating particles of the insulating layer.
  • the thickness of the conductive layer and the insulating layer is taken into account for the total thickness of the anisotropic conductive film having a multilayer structure (for example, the sum of the thicknesses of the conductive layer and the insulating layer).
  • Equation 1 Ac is the content (% by weight) of the insulating particles in the conductive layer, Ai is the content (% by weight) of the insulating particles in the insulating layer, Tc is the thickness of the conductive layer ( ⁇ m), Ti is the thickness of the insulating layer ( ⁇ m) respectively.
  • the percentage of the total insulating particle content is calculated in consideration of the thickness of each layer.
  • the total insulating particle content calculation method is equally applied to the contents of other compositions with respect to the total weight of the anisotropic conductive film solid content, even if not specifically mentioned below.
  • melt viscosity of each layer through the content of the insulating particles in the above range can represent the density ratio according to an embodiment of the present invention, by controlling the fluidity of each layer can not only prevent the outflow of the conductive particles to the space portion. In addition, the short between the electrodes can be prevented.
  • the insulation reliability can be improved due to the insulation of the particles.
  • the conductive layer included in the anisotropic conductive film according to an embodiment of the present invention may include conductive particles.
  • the conductive particles may be contained in the conductive layer for conduction between terminals, and the conductive particles used in the example of the present invention are not particularly limited, and conductive particles commonly used in the art may be used.
  • Non-limiting examples of the conductive particles include metal particles including Au, Ag, Ni, Cu, solder and the like; carbon; Particles coated with a metal containing Au, Ag, Ni, etc., using resins containing polyethylene, polypropylene, polyester, polystyrene, polyvinyl alcohol, and the like, and modified resins thereof as particles; Insulated electroconductive particle etc. which coat
  • the average particle size of the conductive particles may vary by the pitch of the circuit to be applied, and specifically, may be selected and used depending on the use in the range of 1 ⁇ m to 10 ⁇ m.
  • the conductive particles may be contained in the conductive layer in an amount of 1% by weight to 40% by weight, specifically, 5% by weight to 40% by weight, for example, 10% by weight to the total weight of the conductive layer solids. 30 weight percent.
  • the entire conductive particles in the anisotropic conductive film may be contained in an amount of 5 wt% to 20 wt%, and specifically 5 wt% to 15 wt%.
  • the content of the conductive particles contained in the conductive layer is expressed as the total weight of the anisotropic conductive film solid content
  • the conductive layer and the insulating layer with respect to the total thickness (eg, the sum of the thicknesses of the conductive layer and the insulating layer) of the anisotropic conductive film of the multilayer structure.
  • the percentage of the total conductive particle content is calculated.
  • Equation 2 Cc is the content (% by weight) of the insulating particles in the conductive layer, Ci is the content (% by weight) of the insulating particles in the insulating layer, Tc is the thickness of the conductive layer ( ⁇ m), Ti is the thickness of the insulating layer ( ⁇ m) respectively.
  • the conductive particles may be easily pressed between the terminals to ensure stable connection reliability, and the connection resistance may be reduced by improving conduction.
  • the content (weight%) of the conductive particles and the insulating particles included in the conductive layer of the example of the present invention may be greater than the content (weight%) of the insulating particles included in the insulating layer.
  • the content of the conductive particles and the insulating particles included in the conductive layer may be 40 wt% to 90 wt%, specifically 40 wt% to 80 wt%, based on the total weight of the conductive layer solids, more specifically 45 Weight percent to 75 weight percent.
  • the content of the insulating particles included in the insulating layer is substantially the same as described in the above-mentioned insulating particle section, it will be omitted below.
  • the flow of the composition can be reduced to produce an ultra-low flow anisotropic conductive film, and in the case of thermally compressing the anisotropic conductive film, the ratio of the density (X) of the conductive particles of the electrode portion and the density (Y) of the conductive particles of the space portion (X: Y) can be adjusted from 1: 1 to 1:10.
  • Examples of the conductive layer and the insulating layer of the present invention may add other additives in addition to the above-described components to further impart additional physical properties to the film without inhibiting the basic physical properties of the anisotropic conductive film.
  • the anisotropic conductive film of the present invention may further include other additives such as an polymerization inhibitor, an antioxidant, a heat stabilizer, a peeling agent and the like to add additional physical properties without inhibiting basic physical properties.
  • additives such as an polymerization inhibitor, an antioxidant, a heat stabilizer, a peeling agent and the like to add additional physical properties without inhibiting basic physical properties.
  • the addition amount of the other additives may vary depending on the use of the film, the desired effect, and the like, and the preferred content thereof is not particularly limited, and is well known to those skilled in the art.
  • the method for forming the anisotropic conductive film of the present invention using the anisotropic conductive film composition is not particularly limited and may be a method commonly used in the art.
  • a non-limiting example of forming an anisotropic conductive film is as follows: The binder resin is dissolved in an organic solvent and liquefied, followed by stirring for a predetermined time by adding the remaining components, which is applied on a release film to a thickness of 10 ⁇ m to 50 ⁇ m. After drying for a certain time, the organic solvent is volatilized to obtain an anisotropic conductive film having a single layer structure.
  • a conventional organic solvent can be used as the organic solvent without limitation, and in the present invention, by repeating the above procedure two or more times, an anisotropic conductive film having a two-layer or more multilayer structure can be obtained.
  • a semiconductor device connected to any one of the above-described anisotropic conductive films of the present invention is provided.
  • a semiconductor device includes a first to-be-connected member containing a first electrode, a second to-be-connected member containing a second electrode, and an anisotropic conductive film according to an embodiment of the present invention.
  • the anisotropic conductive film may be a semiconductor device positioned between the first to-be-connected member and the second to-be-connected member to connect the first electrode and the second electrode.
  • the anisotropic conductive film contains conductive particles, and the first electrode and the second electrode can be electrically connected by the conductive particles contained between the first circuit member and the second circuit member and contained in the anisotropic conductive film.
  • the first to-be-connected member may be a glass substrate, and the second to-be-connected member may be any one of a COF, an IC driver chip, or an IC chip.
  • the anisotropic conductive film is placed between the glass substrate and any one of the COF, IC driver chip or IC chip, and press-bonded under the conditions of 50 °C to 90 °C, 1 second to 5 seconds, 1.0 MPa to 5.0 MPa After the main compression under the conditions of 170 ° C. to 190 ° C., 5 seconds to 7 seconds, and 60 MPa to 80 MPa, it was left to stand for 250 hours under a temperature of 85 ° C. and a relative humidity of 85%.
  • the resistance may be 7 k ⁇ or less.
  • connection resistance may be 15 kPa or less after the reliability evaluation measured by standing for 500 hours under the conditions of 85 °C and 85% relative humidity.
  • a semiconductor device has the advantage that it can be used for a long time under high temperature and / or high humidity conditions.
  • the specific conditions of the pressure bonding and the main compression are substantially the same as those mentioned in the method for measuring the density ratio (X: Y) of the conductive particles described above, and thus the description thereof is omitted.
  • Binder resin acting as a matrix for film formation 20 parts by weight of phenoxy resin (PKHH, Inchemrez, USA) dissolved in a xylene / ethyl acetate azeotrope mixed solvent at 40% by volume, cured propylene oxide based curing reaction 15 parts by weight of epoxy resin (EP-4000S, Adeka, Japan), 10 parts by weight of propylene oxide epoxy resin (EP-4010S, Adeka, Japan), as a thermosetting cationic curing agent (Si-60L, Sanshin Chemical, Japan) 5 30 parts by weight of insulating particles (SFP-20M, DENKA, Japan) and 20 parts by weight of conductive particles (AUL-704, 4um average diameter, SEKISUI, Japan) as insulation particles for imparting weight, flowability and insulation. After mixing to prepare a conductive layer composition.
  • PKHH phenoxy resin
  • EP-4010S Adeka, Japan
  • thermosetting cationic curing agent Si-60L, Sanshin Chemical, Japan
  • an insulating layer composition was prepared using the same method as the composition and content shown in Table 1 below.
  • Each of the insulating layer compositions was coated on a white release film, and then the solvent was volatilized for 5 minutes in a 70 ° C. dryer to obtain a conductive layer and an insulating layer film dried to a thickness of 6 ⁇ m and 12 ⁇ m of the conductive layer, respectively.
  • Each of the prepared conductive layer and insulating layer film was laminated at a temperature of 40 ° C. using a laminator to obtain an anisotropic conductive film.
  • the total insulating particle content is a value calculated based on the total weight of the anisotropic conductive film solid content, and the percentage of the total insulating particles was calculated in consideration of the thickness of each layer.
  • Example 2 In Example 1, except that the content of each composition was adjusted to Table 1, the anisotropic conductive film of Example 2 was prepared in the same manner and conditions as in Example 1.
  • Example 1 except that the content of each composition was adjusted to Table 1, the anisotropic conductive film of Example 3 was prepared in the same manner and conditions as in Example 1.
  • Example 1 except that the content of each composition was adjusted to Table 1, the anisotropic conductive film of Comparative Example 1 was prepared in the same manner and conditions as in Example 1.
  • Example 1 except that the content of each composition was adjusted to Table 1, the anisotropic conductive film of Comparative Example 2 was prepared in the same manner and conditions as in Example 1.
  • Example 1 except that the content of each composition was adjusted to Table 1, the anisotropic conductive film of Comparative Example 3 was prepared in the same manner and conditions as in Example 1.
  • the sample of the connection was observed under a microscope as follows to measure the number of particles on the bump and the number of particles present in the inter-electrode space, and the density X, Y (number of particles on the bump ( ⁇ m 2 ) per bump and the number of electrodes between the electrodes).
  • the number of particles present in the space portion (ea / ⁇ m 2 ) and X: Y were measured, and the results are shown in Table 2 below.
  • the anisotropic film was formed by using a driver-IC chip in which a 4-terminal measurement pattern was formed on a patternless glass in which an ITO layer was coated with 1000 ⁇ on 0.5 t glass.
  • the upper and lower interfaces of the conductive film were pressed at a measured temperature of 60 ° C. for 1 second at 1 MPa and 180 ° C., 6 seconds at 70 MPa in the main compression conditions to prepare 7 pieces of each of the above specimens.
  • the connection value was measured five times by a four point probe method (ASTM F43-64T) to calculate an average value.
  • the density ratio is in the range of 1: 1 to 1:10, the connection resistance is 0.5 ⁇ or less, and the connection resistance is 7 ⁇ or less after the reliability evaluation after 250 hours. After 500 hours, after the reliability evaluation, the connection resistance was 15 ⁇ or less, and it was confirmed that the outflow of the conductive particles was small and the connection resistance and the connection reliability were excellent in the density range.
  • the density ratio exceeds 1:10, the connection resistance is more than 0.5 ⁇ , the connection resistance is more than 7 ⁇ after 250 hours reliability evaluation, and the connection resistance is 15 ⁇ after 500 hours reliability evaluation. If the density ratio is not satisfied, it can be confirmed that not only the connection resistance but also the connection resistance after the reliability evaluation are not improved.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Insulated Conductors (AREA)
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  • Conductive Materials (AREA)

Abstract

La présente invention concerne un film conducteur anisotrope qui peut empêcher un court circuit par ajustement de la densité des particules conductrices poussées contre des parties d'électrode entre des électrodes et la densité des particules conductrices dans un espace séparant les électrodes. Ledit film conducteur anisotrope présente des effets de réduction du coût et des caractéristiques de connexion améliorés. L'invention concerne en outre un dispositif à semi-conducteur connecté au moyen dudit film conducteur anisotrope.
PCT/KR2014/010041 2013-10-29 2014-10-24 Film conducteur anisotrope et dispositif à semi-conducteur l'utilisant WO2015064961A1 (fr)

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CN201480059674.7A CN105706183B (zh) 2013-10-29 2014-10-24 各向异性导电膜及利用其的半导体装置

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CN112054105A (zh) * 2019-06-06 2020-12-08 錼创显示科技股份有限公司 微型发光二极管显示器的制造方法

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CN108291121B (zh) * 2015-11-26 2020-12-29 国都化学株式会社 非等向性导电膜及使用其的连接结构

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