WO2015062469A1 - 用于反应腔的屏蔽结构 - Google Patents

用于反应腔的屏蔽结构 Download PDF

Info

Publication number
WO2015062469A1
WO2015062469A1 PCT/CN2014/089667 CN2014089667W WO2015062469A1 WO 2015062469 A1 WO2015062469 A1 WO 2015062469A1 CN 2014089667 W CN2014089667 W CN 2014089667W WO 2015062469 A1 WO2015062469 A1 WO 2015062469A1
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
shield
shielding
shielding member
wall
Prior art date
Application number
PCT/CN2014/089667
Other languages
English (en)
French (fr)
Inventor
佘清
吕铀
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to KR1020167014590A priority Critical patent/KR20160079088A/ko
Publication of WO2015062469A1 publication Critical patent/WO2015062469A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Definitions

  • the present invention relates to semiconductor production technology, and more particularly to a shielding structure for a reaction chamber.
  • an ICP Inductively Coupled Plasma
  • a plasma In the field of semiconductor production, when performing PVD (Physical Vapor Deposition), an ICP (Inductively Coupled Plasma) method is usually used to excite a high-density plasma in a reaction chamber and bombarded by a plasma.
  • the sputtering source is such that the sputtering source sputters sputtered particles of molecules, atoms or ions and deposits on the substrate to form a thin film.
  • the inner wall of the reaction chamber is also bombarded.
  • a shielding member is generally disposed in the inner wall of the reaction chamber, and the shielding member is used for reducing the bombardment of charged ions or sputtered particles on the inner wall of the reaction chamber, thereby reducing sputtering generated on the inner wall of the reaction chamber and avoiding The deposition occurs, and at the same time, the shield does not affect the transmission of RF energy.
  • 1 is a view showing an example of a cross section of a conventional reaction chamber and a shield along the axial direction of the reaction chamber
  • FIG. 2 is a view showing an example of a cross section of the conventional reaction chamber and the shield in a direction perpendicular to the axial direction of the reaction chamber. As shown in FIG. 1 and FIG.
  • a discharge coil 4 is disposed outside the reaction chamber 1 below the sputtering source 3, and a shield 2 is disposed around the inner wall of the reaction chamber 1 on the inner side of the reaction chamber 1.
  • the shield member 2 has a cylindrical structure and is not closed in the circumferential direction. Specifically, a toothed groove 5 penetrating the shield member 2 in the axial direction of the shield member 2 is formed on the wall surface of the shield member 2, so-called toothed shape.
  • the groove means that the groove is perpendicular to
  • the projection in the axial plane of the shield 2 is similar to the shape of the character "Z", i.e., the portion of the projection that faces the inside of the reaction chamber and the portion of the groove that faces away from the inside of the reaction chamber is similar to the convex portion. Out of the teeth.
  • the shield 2 is usually made of a good conductor such as copper, aluminum or the like, which can prevent charged ions or sputtered particles from striking the inner wall of the reaction chamber 1.
  • the non-closed toothed groove 5 provided on the shield 2 can avoid the problem of affecting the radio frequency energy transmission due to the formation of a closed loop to some extent, the structure of the shield 2 is inevitable.
  • the problem is as follows: First, the shielding member 2 of the structure is difficult to process, which makes it difficult to ensure the accuracy of the toothed groove 5 in production, and it is easy to cause the shielding member 2 to close and generate a large result due to insufficient processing precision. The problem of circulation, thereby affecting the transmission of RF energy; second, the spattered particles are easily deposited in the toothed grooves 5 of the existing shield 2, which will cause the toothed grooves 5 to close and create a closed loop.
  • the present invention provides a shield structure for a reaction chamber that is placed in the reaction chamber and that includes a shield and a shield.
  • the shielding member is disposed around the inner wall of the reaction chamber, and the shielding member is provided with at least one notch extending through the shielding member in the axial direction; for each of the notches, a The shielding member is disposed opposite to each other, and the projection of the shielding member in the plane of the notch covers the notch, and the distance from the inner surface of the shielding member to the center of the reaction chamber is not equal to the inside of the shielding member A distance from the surface to the center of the reaction chamber to form a radio frequency energy transfer channel between the shield and the shield.
  • the shielding member is disposed on an inner wall of the reaction chamber.
  • the shielding member comprises a shielding layer
  • the shielding layer is a film layer coated on an inner wall of the reaction chamber.
  • the shielding member is disposed inside the inner wall of the reaction chamber.
  • the shielding member comprises a base body and a shielding layer, and the shielding layer is a film layer coated on an inner surface of the base body.
  • the material of the substrate is an insulating material.
  • the shielding layer has a thickness of 0.5-2 mm.
  • the distance from the inner surface of the shielding member to the center of the reaction chamber is smaller than the distance from the inner surface of the shielding member to the center of the reaction chamber.
  • the distance from the inner surface of the shielding member to the center of the reaction chamber is greater than the distance from the inner surface of the shielding member to the center of the reaction chamber.
  • the number of the gaps is plural.
  • a plurality of said notches are evenly distributed along the circumference of said reaction chamber.
  • the inner surface of the shielding member and/or the inner surface of the shielding member is made of a good metal conductor.
  • the inner surface of the shielding member and/or the shielding member is formed with protrusions and/or pits.
  • the shielding structure provided by the embodiment of the invention is disposed in the reaction chamber and includes a shielding member and a shielding member.
  • the shielding structure can shield the inner wall of the reaction chamber within a range of 360 degrees, thereby effectively preventing sputtering particles and/or charging.
  • the ions bombard the inner wall of the reaction chamber to form an effective protection for the inner wall of the reaction chamber, while avoiding a closed loop of the metal layer deposited by the sputtered particles on the inner wall of the reaction chamber.
  • the shielding member and the shielding member are two independent components, it can not only overcome the prior art shielding member, which causes the toothed groove to be closed due to the easy deposition of sputtered particles in the toothed groove. The problem is that the processing precision can be reduced and the cost can be saved.
  • the problem that the shield of the integrated structure in the prior art is closed due to thermal expansion or damage to the inner wall of the reaction chamber can be effectively avoided.
  • FIG. 1 is a view showing an example of a cross section of a conventional reaction chamber and a shield along an axial direction of a reaction chamber;
  • FIG. 2 is a view showing an example of a cross section of a conventional reaction chamber and a shield in a direction perpendicular to an axial direction of a reaction chamber;
  • FIG. 3 is a longitudinal view of a shielding structure that has been assembled in a reaction chamber according to an embodiment of the present invention.
  • Figure 4 is a transverse cross-sectional view of the shield structure assembled to the reaction chamber shown in Figure 3;
  • Figure 5 is a partial enlarged view of the shield structure of Figure 3;
  • FIG. 6 is a transverse cross-sectional view of a shield structure that has been assembled to a reaction chamber according to another embodiment of the present invention.
  • Figure 7 is a transverse cross-sectional view of a shield structure assembled to a reaction chamber according to still another embodiment of the present invention.
  • FIG. 8 is a transverse cross-sectional view of a shield structure that has been assembled to a reaction chamber according to still another embodiment of the present invention.
  • 1-reaction chamber 10-reaction chamber inner wall; 2-shield; 3, 40-sputter source; 4, 50-discharge coil; 5-toothed groove; 20-shield; 21-joint; Shielding portion; 30-shield; 31-shield; 32-matrix.
  • the inner surface of the shielding member refers to the surface of the shielding member facing the center of the reaction chamber; the inner surface of the shielding member refers to the surface of the shielding member facing the center of the reaction chamber.
  • the term “inner” refers to the direction toward the center of the reaction chamber; the term “outer” refers to the direction away from the center of the reaction chamber.
  • the shielding structure for a reaction chamber is disposed in the reaction chamber and includes a shielding member and a shielding member, wherein the shielding member is disposed around an inner wall of the reaction chamber, and the shielding member is disposed at the shielding member
  • the upper opening is provided with at least one notch extending through the shielding member in the axial direction; for each of the notches, a shielding member disposed opposite to the shielding member is disposed, and the shielding member is projected in a plane of the notch Covering the gap, and the distance from the inner surface of the shutter to the center of the reaction chamber is not equal to the screen a distance from an inner surface of the shield to a center of the reaction chamber to form a radio frequency energy transfer passage between the shield and the shield.
  • FIG. 3 is a longitudinal cross-sectional view of a shield structure assembled to a reaction chamber according to an embodiment of the present invention
  • FIG. 4 is a transverse cross-sectional view of the shield structure assembled to the reaction chamber shown in FIG. 3
  • FIG. 5 is a shield view of FIG. A partial enlarged view of the structure.
  • the shielding structure provided in this embodiment is located in the reaction chamber, and includes a shielding member 20 and a shielding member 30 for preventing sputtered particles sputtered by the charged ions and/or the sputtering source 40.
  • the inner wall 10 of the reaction chamber is bombarded.
  • the shielding member 30 has a substantially cylindrical structure and is disposed thereon around the inner wall 10 of the reaction chamber.
  • the RF energy transmitted from the discharge coil 50 is transmitted into the reaction chamber, and the eddy current generated by the closed loop affects the magnetic field of the discharge coil 50 and consumes radio frequency energy
  • the shield can be constructed in this way. 30: That is, at least one notch that penetrates the shield member 30 in its axial direction is opened thereon, that is, the shield member 30 is not closed in the circumferential direction.
  • the shielding member 20 is disposed at the notch of the shielding member 30 for shielding the inner wall 10 of the reaction chamber exposed to the process environment through the notch to prevent the sputter particles or charged ions from bombarding the inner wall 10 of the reaction chamber at the notch.
  • the shutter 20 includes a connecting portion 21 and a blocking portion 22 that are connected to each other.
  • the connecting portion 21 penetrates the notch in the radial direction of the reaction chamber, and the outer end portion of the connecting portion 21 is fixed to the inner wall 10 of the reaction chamber, and the inner end portion of the connecting portion 21 protrudes from the inner surface of the shield member 30, that is, the connecting portion
  • the distance from the inner end of the 21 to the central axis of the reaction chamber is greater than the distance from the inner surface of the shield 30 to the central axis of the reaction chamber.
  • the shielding portion 22 is connected to the inner end portion of the connecting portion 21, and extends from the inner end portion of the connecting portion 21 to both sides in the clockwise and counterclockwise directions to cover the corresponding notch.
  • the projection of the shutter 20 in a plane parallel to the bottom of the chamber has a "T" configuration
  • the shutter 22 is the horizontal stroke portion therein
  • the joint portion 21 is the vertical stroke portion therein.
  • the shielding portion 22 is connected to the inner end portion of the connecting portion 21, because the distance from the inner end portion of the connecting portion 21 to the central axis of the reaction chamber is greater than the distance from the inner surface of the shield member 30 to the central axis of the reaction chamber, and thus the shielding portion 22 is There is a gap between the shields 30 to form a radio frequency energy transmission channel, thereby avoiding a closed loop in the inner wall 10 of the reaction chamber. The frequency energy cannot be completely transferred into the reaction chamber.
  • the shutter 20 can be fixed to the inner wall 10 of the reaction chamber by means of screws or the like, that is, the outer end of the connecting portion 21 can be fixed to the inner wall 10 of the reaction chamber by means of screws or the like.
  • the connection between the shielding portion 22 and the connecting portion 21 the two may be integrally formed, or may be screwed, riveted, welded, or the like.
  • a shielding structure formed by the shielding member 20 and the shielding member 30 is disposed on the inner wall 10 of the reaction chamber, and the shielding structure completely covers the inner surface of the inner wall 10 of the reaction chamber, so that the inside of the reaction chamber and the reaction chamber There is no direct path between the inner surfaces of the inner wall 10 to prevent sputtered particles and/or charged ions from bombarding the inner wall 10 of the reaction chamber.
  • the shielding structure provided by the embodiment includes two independent components of the shielding member 20 and the shielding member 30, and a gap is formed between the shielding member 20 and the shielding member 30, so that sputtering of sputtered particles in the shielding member can be effectively avoided.
  • 20 and the shield 30 deposit a metal layer and form a closed loop. Therefore, compared with the prior art, the present embodiment provides a separate shielding member 20 to block the gap of the shielding member 30, thereby avoiding the formation of a closed loop at the notch of the shielding member 30 during the process. Thereby, the problem that the sputtered particles are easily deposited in the toothed grooves of the shield structure in the prior art and the toothed grooves are closed is overcome.
  • the shielding structure provided by the embodiment is formed by assembling two independent components of the shielding member 20 and the shielding member 30, without the need for the shielding member to cover the inner wall of the reaction chamber without forming a closed loop, as in the prior art.
  • the shielding member is provided in the shape of a toothed groove, so that the shielding structure provided by the present embodiment reduces the processing precision requirement relative to the prior art, which not only facilitates manufacturing and installation, but also reduces the cost of manufacturing and installation.
  • the shielding portion 22 extends to the edge portion at the notch of the shield 30 to cover the gap on the shield 30 such that there is no direct path between the interior of the reaction chamber and the inner wall 10 of the reaction chamber, preventing sputtering particles and/or The charged ions bombard the inner wall 10 of the reaction chamber from the notch, thereby prolonging the service life of the inner wall 10 of the reaction chamber.
  • the number of the notches on the shielding member 30 is four, and the number of the shielding members 20 is also four, and the setting positions are in one-to-one correspondence with the notches. It can be understood that, in practical applications, the number of the notches and the shielding members 20 can be set to other numbers as needed, as long as the number of the two and the setting positions are in one-to-one correspondence, and each of the notches has a shielding member 20 for covering.
  • the block can also form an RF energy transfer channel at each of the notches.
  • the four notches on the shield 30 are uniformly distributed along the circumferential direction of the inner wall 10 of the reaction chamber, that is, the four gaps.
  • the orthographic projection on the shield 30 it is symmetrically distributed in a cross. It can be understood that when the number of the notches on the shield 30 is plural, it is preferable to uniformly distribute the notches along the circumferential direction of the inner wall 10 of the reaction chamber (for example, the embodiment shown in FIG. 4), that is, the shield 30 is parallel to the reaction.
  • the orthographic projection in the plane at the bottom of the cavity is a centrally symmetrical pattern.
  • the material of the inner surface of the shielding member 20 and/or the material of the inner surface of the shielding member 30 may be a good metal conductor.
  • the same metal as the sputtering source 40 may be used, or sputtering and sputtering may be employed.
  • the metal conductors of the source 40 are made of a relatively good metal conductor to form the shield 20 and the shield 30.
  • the shielding member 20 and the shielding member 30 are made of a good metal conductor, so that the shielding member 20 and the shielding member 30 can more easily adsorb the sputtered particles sputtered thereon, and the particle contamination caused by the sputtered particles can be effectively avoided.
  • the deposited layer can also be stabilized during the PVD process, avoiding re-peeling. It should be understood that the above is only a preferred embodiment of the present invention, and the material of the shielding member 20 and the shielding member 30 in the present invention is not limited thereto.
  • the shielding member 30 may be formed by coating a good metal conductor on the inner wall 10 of the reaction chamber, and may be coated by a method such as dipping, spraying or spin coating.
  • a high-temperature spray method can be used to spray a good metal conductor onto the inner wall 10 of the reaction chamber to form the shield member 30.
  • the metal spraying method is prior art, and will not be described here.
  • the metal spraying method can relatively easily form the shield 30 on the inner wall 10 of the reaction chamber without the need to manufacture a separate component as the shield 30, which can further simplify the process of processing the shield 30 and save cost.
  • the shielding member 30 may not be provided in advance, but the shielding member 20 may be first disposed, and then the metal layer deposited on the inner surface of the inner wall 10 of the reaction chamber by the sputter particles during the PVD process may be disposed. As the shield 30.
  • the thickness of the shield 30 formed by the coating method may be Between 0.5-2mm.
  • a metal spraying method may be employed and controlled such that a metal layer having a thickness of 0.5 to 2 mm is sprayed on the inner surface of the inner wall 10 of the reaction chamber as the shield member 30.
  • the structure of the shield member 30 can be made thinner, so that the amount of thermal expansion of the shield member 30 is small during the PVD process, and the shield member 30 and the shield member 20 are prevented from being inside the reaction chamber inner wall 10 due to thermal expansion.
  • a closed loop is formed on the surface, and at the same time, the damage of the inner wall of the reaction chamber after the shield member 30 is thermally expanded can be prevented as compared with the prior art.
  • the inner surfaces of the shield 30 and the shutter 20 may be formed with protrusions and/or recesses, that is, the inner surfaces of the shield 30 and the shutter 20 may be roughened.
  • the metal coating obtained by the metal spraying method is roughened, the metal can be sprayed on the inner wall 10 of the reaction chamber to form the shield 30 and naturally roughen the surface of the shield 30, and can also be shielded.
  • the surface of the member 20 is sprayed with a metal coating by a metal spraying method to roughen the surface of the shutter 20.
  • the surface roughening of the shield member 30 and the shutter member 20 can more effectively adsorb the sputtered particles sputtered onto the shield member 30 and the shutter member 20, avoiding particle contamination caused by the spattering of the sputtered particles.
  • FIG. 6 is a transverse cross-sectional view of a shield structure that has been assembled to a reaction chamber according to another embodiment of the present invention.
  • the shield structure provided in this embodiment is similar to the shield structure provided in the embodiment shown in FIG. 3 to FIG. 5.
  • the difference between the two is that the shield member 30 is not disposed on the inner wall 10 of the reaction chamber but on the inner side of the inner wall 10 of the reaction chamber. That is, a shield 30 is disposed in the chamber of the reaction chamber at a distance from the inner wall 10 of the reaction chamber and around the inner wall 10 of the reaction chamber.
  • the shield 30 is no longer a film layer formed by the coating process, but a liner having a certain wall thickness that can be independently placed in the chamber of the reaction chamber.
  • the processing material of the shielding member 30, the notch thereon, and the corresponding number and arrangement positions of the shielding member 20 corresponding thereto are similar to those of the foregoing embodiment shown in FIG. 3 to FIG. 5, and details are not described herein again.
  • the fixing manner of the shielding member 20 it may be fixed to the inner wall 10 of the reaction chamber similarly to the foregoing embodiment; or it may be fixed to the outer surface of the shielding member 30 as long as the two are fixed while being insulated without being formed. It is sufficient to close the loop.
  • an insulated connector can be used instead of a metal screw or rivet.
  • the shielding structure provided by the embodiment has the advantages of the foregoing embodiments, and has the advantages that: first, the shielding member can be arbitrarily set according to the process requirements; Secondly, a shield made of a more suitable material can be selected according to different sputtering targets; and third, since the shield is not disposed on the inner wall, it is easy to assemble and replace.
  • FIG. 7 is a transverse cross-sectional view of a shielding structure assembled to a reaction chamber according to still another embodiment of the present invention.
  • the shielding structure provided in this embodiment is similar to the shielding structure in the embodiment shown in FIG. 6. The difference between the two is that the shielding member 20 is disposed on the outer side of the notch on the shielding member 30, that is, the inner surface of the shielding member 20 is reacted. The distance from the central axis of the cavity is greater than the distance from the inner surface of the shield 30 to the central axis of the reaction chamber such that the shield 20 shields the gap above it from the outside of the shield 30.
  • the shielding structure provided by the embodiment also has the advantages of being easy to assemble and replace, being able to adapt to different processes and sputtering targets, and the like.
  • FIG. 8 is a transverse cross-sectional view of a shielding structure that has been assembled to a reaction chamber according to still another embodiment of the present invention.
  • the shielding structure provided in this embodiment is similar to the shielding structure in the embodiment shown in FIG. 7, and the difference is that the shielding member 30 includes the base body 32 and the shielding layer 31 disposed on the inner wall of the base body 32.
  • the base 32 is preferably made of a non-metallic material such as ceramics.
  • the material of the shielding layer 31 and the arrangement between the substrate 32 and the substrate 32 the embodiment described in the foregoing embodiments of FIGS. 3 to 5 can be used.
  • the shielding structure provided by the embodiment also has the advantages of being easy to assemble and replace, being able to adapt to different processes and sputtering targets, and the like.
  • the shielding structure provided by the embodiments of the present invention is disposed in the reaction chamber and includes a shielding member and a shielding member, by which the reaction chamber can be in a range of 360 degrees.
  • the inner wall is shielded, effectively preventing the sputtered particles and/or charged ions from bombarding the inner wall of the reaction chamber, thereby effectively protecting the inner wall of the reaction chamber, and avoiding a closed loop of the metal layer deposited by the sputtered particles on the inner wall of the reaction chamber.
  • the shielding member and the shielding member are two independent components, it can not only overcome the prior art shielding member, which causes the toothed groove to be closed due to the easy deposition of sputtered particles in the toothed groove.
  • the problem is that the processing precision can be reduced and the cost can be saved.
  • the problem that the shield of the integrated structure in the prior art is closed due to thermal expansion or damage to the inner wall of the reaction chamber can be effectively avoided.
  • the shield is a shielding film layer coated on the inner wall of the reaction chamber
  • the thickness of the film layer is compared to the screen in the prior art.
  • the shielding member is thin. Therefore, the shielding structure provided by the embodiment of the present invention is more thermally expanded than the shielding of the prior art when the temperature is increased by the bombardment of the charged ions and/or the sputtered particles. To the extent that closed loops due to expansion are less likely to occur.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

本发明提供一种用于反应腔的屏蔽结构，其置于反应腔内且包括遮挡件和屏蔽件。其中，屏蔽件环绕反应腔内壁而设置，在屏蔽件上开设有至少一个沿轴向贯穿该屏蔽件的缺口；对于每一个缺口而言，均配置有一个与之相对设置的遮挡件，并且该遮挡件在该缺口所在平面内的投影覆盖该缺口，且该遮挡件的内表面到反应腔的中心的距离不等于屏蔽件的内表面到反应腔的中心的距离，以使遮挡件与屏蔽件之间形成射频能量传送通道。本发明提供的屏蔽结构能够防止溅射粒子和/或带电离子轰击反应腔内壁，避免溅射粒子沉积出的金属层产生闭合环路，以及避免溅射粒子剥落后造成的颗粒污染。此外，本发明提供的屏蔽结构还能够降低加工精度的要求，节约制造和安装成本。

Description

用于反应腔的屏蔽结构 技术领域
本发明涉及半导体生产技术，尤其涉及一种用于反应腔的屏蔽结构。
背景技术
在半导体生产领域中，进行PVD(Physical Vapor Deposition，物理气相沉积)时，通常采用ICP(Inductively Coupled Plasma，电感耦合等离子体)的方法在反应腔内激发高密度的等离子体，并由等离子体轰击溅射源，使得溅射源溅射出分子、原子或离子等溅射粒子并沉积在基片上形成薄膜。通常，带电离子或溅射粒子做无规则运动时也会轰击反应腔的内壁，此外，设置在腔室外的用于传输射频能量的放电线圈与反应腔内的等离子体之间存在容性耦合，这会进一步吸引高能量带电离子轰击反应腔的内壁，导致反应腔的使用寿命缩短。此外，带电离子或溅射粒子轰击反应腔的内壁时还会产生沉积或溅射，若在反应腔的内壁上沉积出闭合的金属层，则会影响射频能量的耦合；另一方面，撞击反应腔的内壁后剥落的颗粒会造成污染，需要频繁清洗，这又会提高成本。
为解决上述问题，通常会在反应腔的内壁内设置一个屏蔽件，该屏蔽件用于减少带电离子或溅射粒子对反应腔的内壁的轰击，以此减少反应腔内壁产生的溅射并避免产生沉积，同时，该屏蔽件也不会对射频能量的传输产生影响。图1为现有的反应腔及屏蔽件沿反应腔的轴向的剖面示例图，图2为现有的反应腔及屏蔽件沿垂直于反应腔的轴向的方向的剖面示例图。如图1和图2所示，现有技术中，位于溅射源3下方的反应腔1的外侧设置有放电线圈4，在反应腔1的内侧环绕该反应腔1的内壁设置有屏蔽件2，该屏蔽件2呈筒状结构且在周向上不闭合，具体地，在屏蔽件2的壁面上开设有沿屏蔽件2的轴向贯穿该屏蔽件2的齿状沟槽5，所谓齿状沟槽是指该沟槽在垂直于 屏蔽件2的轴向的平面内的投影呈类似于字符“Z”的形状，即，该沟槽的投影中的朝向反应腔内侧的部分和该沟槽的背离反应腔内侧的部分类似于凸出的齿。屏蔽件2通常选用诸如铜、铝等的良导体制成，其能够避免带电离子或溅射粒子撞击反应腔1的内壁。
在实际应用中，尽管屏蔽件2上设置的非闭合的齿状沟槽5能够在一定程度上避免出现因形成闭合环路而影响射频能量传输的问题，但是该屏蔽件2的结构仍然不可避免地存在如下问题：其一，该结构的屏蔽件2加工困难，这将使得在生产中难以保证该齿状沟槽5的精度，容易出现因加工精度不够而造成屏蔽件2闭合并产生较大环流的问题，从而影响射频能量的传输；其二，现有的屏蔽件2的齿状沟槽5中容易沉积溅射粒子，这将导致齿状沟槽5闭合而产生闭合环路。
发明内容
有鉴于此，本发明的目的在于提供一种用于反应腔的屏蔽结构，以克服现有技术中屏蔽件结构的齿状沟槽中容易沉积溅射粒子并导致齿状沟槽闭合的问题。
为实现上述目的，本发明提供一种用于反应腔的屏蔽结构，其置于所述反应腔内且包括遮挡件和屏蔽件。其中，所述屏蔽件环绕所述反应腔的内壁而设置，在所述屏蔽件上开设有至少一个沿轴向贯穿该屏蔽件的缺口；对于每一个所述缺口而言，均配置有一个与之相对设置的所述遮挡件，并且该遮挡件在该缺口所在平面内的投影覆盖所述缺口，且该遮挡件的内表面到所述反应腔的中心的距离不等于所述屏蔽件的内表面到所述反应腔的中心的距离，以使所述遮挡件与所述屏蔽件之间形成射频能量传送通道。
其中，所述屏蔽件设置在所述反应腔的内壁上。
其中，所述屏蔽件包括屏蔽层，所述屏蔽层为涂覆在所述反应腔的内壁上的膜层。
其中，所述屏蔽件设置在所述反应腔的内壁的内侧。
其中，所述屏蔽件包括基体和屏蔽层，所述屏蔽层为涂覆在所述基体的内表面的膜层。
其中，所述基体的材料为绝缘材料。
其中，所述屏蔽层的厚度为0.5-2mm。
其中，所述遮挡件的内表面到所述反应腔中心的距离小于所述屏蔽件的内表面到所述反应腔中心的距离。
其中，所述遮挡件的内表面到所述反应腔中心的距离大于所述屏蔽件的内表面到所述反应腔中心的距离。
其中，所述缺口的数量为多个。优选地，多个所述缺口沿所述反应腔的周向均匀分布。
其中，所述屏蔽件的内表面和/或所述遮挡件的内表面的材质为金属良导体。
其中，所述屏蔽件和/或所述遮挡件的内表面形成有凸起和/或凹坑。
本发明提供的屏蔽结构具有下述有益效果：
本发明实施例提供的屏蔽结构设置于反应腔内且包括遮挡件和屏蔽件，借助该屏蔽结构能够在360度的范围内对反应腔内壁进行遮蔽，有效地防止了溅射粒子和/或带电离子轰击反应腔内壁，从而对反应腔内壁形成有效保护，同时避免了溅射粒子在反应腔内壁上沉积出的金属层产生闭合环路。进一步地，由于遮挡件和屏蔽件为两个彼此独立的部件，因此，其不仅能够克服现有技术中的屏蔽件因其齿状沟槽中容易沉积溅射粒子而导致齿状沟槽闭合的问题，而且能够降低加工精度的要求，节约成本；此外，还能够有效避免现有技术中的一体结构的屏蔽件因受热膨胀而产生闭合环路或者对反应腔内壁造成损毁的问题。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为现有的反应腔及屏蔽件沿反应腔的轴向的剖面示例图；
图2为现有的反应腔及屏蔽件沿垂直于反应腔的轴向的方向的剖面示例图；
图3为本发明一个实施例提供的已装配于反应腔的屏蔽结构的纵 向剖视图；
图4为图3所示的已装配于反应腔的屏蔽结构的横向剖视图；
图5为图3中的屏蔽结构的局部放大图；
图6为本发明另一实施例提供的已装配于反应腔的屏蔽结构的横向剖视图；
图7为本发明又一实施例提供的已装配于反应腔的屏蔽结构的横向剖视图；以及
图8为本发明再一实施例提供的已装配于反应腔的屏蔽结构的横向剖视图。
附图标记说明
1-反应腔；10-反应腔内壁；2-屏蔽件；3、40-溅射源；4、50-放电线圈；5-齿状沟槽；20-遮挡件；21-连接部；22-遮挡部；30-屏蔽件；31-屏蔽层；32-基体。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。并且本申请中，所谓遮挡件的内表面指的是遮挡件的朝向反应腔中心的表面；所谓屏蔽件的内表面指的是屏蔽件的朝向反应腔中心的表面。本申请中，所谓“内”指的是朝向反应腔中心的方向；所谓“外”指的是背离反应腔中心的方向。
本发明的实质是提供一种用于反应腔的屏蔽结构，该结构能够用于在PVD工艺过程中，防止溅射源溅射出的溅射粒子或者带电离子轰击反应腔的内壁。具体地，本发明提供的用于反应腔的屏蔽结构设置于所述反应腔内且包括遮挡件和屏蔽件，其中，所述屏蔽件环绕所述反应腔的内壁而设置，在所述屏蔽件上开设有至少一个沿轴向贯穿该屏蔽件的缺口；对于每一个所述缺口而言，均配置有一个与之相对设置的所述遮挡件，并且该遮挡件在该缺口所在平面内的投影覆盖所述缺口，且该遮挡件的内表面到所述反应腔的中心的距离不等于所述屏 蔽件的内表面到所述反应腔的中心的距离，以使所述遮挡件与所述屏蔽件之间形成射频能量传送通道。
下面结合附图详细说明本发明实施例提供的用于反应腔的屏蔽结构。
图3为本发明一个实施例提供的已装配于反应腔的屏蔽结构的纵向剖视图；图4为图3所示的已装配于反应腔的屏蔽结构的横向剖视图；图5为图3中的屏蔽结构的局部放大图。请一并参阅图3至图5，本实施例提供的屏蔽结构位于反应腔内，且包括遮挡件20和屏蔽件30，用于防止带电离子和/或溅射源40溅射出的溅射粒子轰击反应腔内壁10。
其中，屏蔽件30呈大致筒状结构，且环绕反应腔内壁10而设置于其上。为避免在反应腔内壁10形成闭合环路而影响放电线圈50发送的射频能量传送至反应腔内，以及因闭合环路产生涡流而影响放电线圈50的磁场并消耗射频能量，可以这样构造屏蔽件30：即，在其上开设至少一个沿其轴向贯穿该屏蔽件30的缺口，也就是说，屏蔽件30在周向上不闭合。
遮挡件20设置于屏蔽件30的缺口处，用以遮挡经由该缺口而暴露于工艺环境的反应腔内壁10，以防止溅射粒子或者带电离子在缺口处轰击反应腔内壁10。
具体地，遮挡件20包括彼此连接的连接部21和遮挡部22。其中，连接部21在反应腔的径向上贯穿缺口，且连接部21的外端部固定于反应腔内壁10，连接部21的内端部凸出于屏蔽件30的内表面，即，连接部21的内端部到反应腔的中心轴线的距离大于屏蔽件30的内表面到反应腔的中心轴线的距离。遮挡部22与连接部21的内端部相连，且自连接部21的内端部起沿顺时针和逆时针方向向两侧延伸，以遮盖对应的缺口。可以理解，遮挡件20在平行于腔室底部的平面内的投影呈“T”型结构，遮挡部22为其中的横笔画部分，连接部21为其中的竖笔画部分。遮挡部22连接在连接部21的内端部，因连接部21的内端部到反应腔的中心轴线的距离大于屏蔽件30的内表面到反应腔的中心轴线的距离，因而遮挡部22与屏蔽件30之间具有间隙，以此形成射频能量传送通道，从而避免在反应腔内壁10形成闭合环路导致射 频能量无法完全传送至反应腔内。
在实际应用中，遮挡件20可以通过螺钉等方式固定在反应腔内壁10上，即，可以通过螺钉等方式将连接部21的外端部固定在反应腔内壁10上。至于遮挡部22和连接部21之间的连接，可以采用二者一体成型的方式，或者采用螺接、铆接、焊接等方式。
本实施例中，通过在反应腔内壁10上设置一个由遮挡件20和屏蔽件30形成的屏蔽结构，且使该屏蔽结构完全覆盖反应腔内壁10的内表面，以使得反应腔内部与反应腔内壁10的内表面之间没有直视路径，以此防止溅射粒子和/或带电离子轰击反应腔内壁10。同时，还可以利用遮挡件20和屏蔽件30吸附溅射到遮挡件20和屏蔽件30上的溅射粒子，避免因溅射粒子和/或带电离子的撞击造成颗粒剥落并形成污染。进一步地，本实施例提供的屏蔽结构包括遮挡件20和屏蔽件30两个独立部件，且遮挡件20和屏蔽件30之间形成有间隙，因此能够有效避免因溅射粒子溅射在遮挡件20和屏蔽件30上而沉积出金属层并形成闭合环路。因此，与现有技术相比，本实施例因设置了单独的遮挡件20来遮挡屏蔽件30的缺口，因而能够避免工艺过程中溅射粒子沉积到屏蔽件30的缺口处产生闭合环路，从而克服了现有技术中屏蔽件结构的齿状沟槽中容易沉积溅射粒子而导致齿状沟槽闭合的问题。此外，本实施例提供的屏蔽结构由遮挡件20和屏蔽件30两个独立部件装配形成，无需像现有技术那样，为了使屏蔽件能够在遮盖反应腔内壁的同时不构成闭合环路而将遮蔽件设置成齿状沟槽的形状，因此相对于现有技术，本实施例提供的屏蔽结构降低了加工精度的要求，这不仅便于制造和安装，而且还降低了制造和安装的成本。
优选地，遮挡部22延伸至屏蔽件30的缺口处的边缘部分，以覆盖屏蔽件30上的缺口，使得反应腔内部与反应腔内壁10之间没有直视路径，防止溅射粒子和/或带电离子从缺口处轰击反应腔内壁10，从而延长反应腔内壁10的使用寿命。
本实施例中，屏蔽件30上的缺口的数量为4个，遮挡件20的数量也为4个，并且设置位置与缺口一一对应。可以理解，在实际应用中，缺口和遮挡件20的数量可以根据需要设置成其他数目，只要二者数量和设置位置一一对应，并使每一个缺口处都有遮挡件20进行遮 挡，同时能够在每一个缺口处均能形成射频能量传送通道。
本实施例中，为使放电线圈50发送的射频能量均匀的传送至反应腔内，将屏蔽件30上的4个缺口设置为沿反应腔内壁10的周向均匀分布，即，这4个缺口在屏蔽件30上的正投影中呈十字对称分布。可以理解，当屏蔽件30上的缺口的数量为多个时，优选使这些缺口沿反应腔内壁10的周向均匀分布(例如图4所示实施例)，即，屏蔽件30在平行于反应腔底部的平面中的正投影为中心对称图形。这样可以使得在每个缺口处由遮挡件20和屏蔽件30形成的射频能量传送通道也能沿反应腔内壁10的周向均匀分布，从而使得放电线圈50发送的射频能量均匀的传送至反应腔内，从而能够进一步使得被激发的等离子体也较为均匀。
更进一步地，遮挡件20的内表面的材质和/或屏蔽件30的内表面的材质可以为金属良导体，具体地，可以采用与溅射源40相同的金属，或者，可以采用与溅射源40的属性较为接近的金属良导体制成遮挡件20和屏蔽件30。采用金属良导体制成遮挡件20和屏蔽件30，能够使得遮挡件20和屏蔽件30更加容易吸附溅射到其上的溅射粒子，能够有效避免溅射粒子剥落后造成的颗粒污染，同时，当溅射粒子沉积到遮挡件20和屏蔽件30上时，所形成的沉积层也能在PVD工艺过程中较为稳定，避免了再次剥落。可以理解的是，上述仅为本发明的优选实施方式，本发明中遮挡件20和屏蔽件30的材质不限于此。
更进一步地，屏蔽件30可以是由金属良导体涂覆在反应腔内壁10上形成的，具体可以采用浸渍、喷涂或旋涂等方法进行涂覆。例如，可以采用高温喷涂的方法，将金属良导体喷涂在反应腔内壁10上以形成屏蔽件30，金属的喷涂方法为现有技术，在此不过多赘述。采用金属的喷涂方法能够较为简便地在反应腔内壁10上形成屏蔽件30，而不需要制造单独的部件作为屏蔽件30，能够进一步简化加工屏蔽件30的工艺流程，节约了成本。需要说明的是，在实际应用中，也可以不预先设置屏蔽件30，而是先设置遮挡件20，之后通过PVD工艺过程中溅射粒子在反应腔内壁10的内表面上沉积出的金属层作为屏蔽件30。
更进一步地，采用涂覆方法形成的屏蔽件30的厚度可以在 0.5-2mm之间。具体地，可以采用并控制金属的喷涂方法，使得在反应腔内壁10的内表面上喷涂上厚度为0.5-2mm的金属层作为屏蔽件30。采用上述方式，可以使得屏蔽件30的结构较薄，因而在PVD工艺过程中，屏蔽件30的热膨胀量较小，避免了由于受热膨胀导致屏蔽件30与遮挡件20在反应腔内壁10的内表面上形成闭合环路，同时，与现有技术相比，能够避免屏蔽件30受热膨胀后对反应腔内壁造成破坏。
更进一步地，屏蔽件30和遮挡件20的内表面可以形成有凸起和/或凹坑，即，屏蔽件30和遮挡件20的内表面可以为粗糙化的。具体地，由于采用金属喷涂方法所得到的金属涂层表面为粗糙化的，因此可以在反应腔内壁10上喷涂金属形成屏蔽件30并自然使得屏蔽件30的表面粗糙化，同样，可以在遮挡件20的表面采用金属喷涂方法喷涂上金属涂层，以使遮挡件20的表面粗糙化。屏蔽件30和遮挡件20的表面粗糙化能够更加有效地吸附溅射到屏蔽件30和遮挡件20上的溅射粒子，避免了溅射粒子剥落造成的颗粒污染。
请参阅图6，为本发明另一实施例提供的已装配于反应腔的屏蔽结构的横向剖视图。本实施例提供的屏蔽结构与图3至图5所示实施例提供的屏蔽结构类似，二者的区别在于：屏蔽件30不是设置于反应腔内壁10，而是设置于反应腔内壁10的内侧，即，在反应腔的腔室中与反应腔内壁10间隔一定距离且环绕该反应腔内壁10设置有屏蔽件30。
本实施例中，屏蔽件30不再是涂覆工艺形成的膜层，而是一个具有一定壁厚的可独立地在放置于反应腔的腔室中的衬筒。该屏蔽件30的加工材料、其上的缺口以及与之对应的遮挡件20的设置数量和设置位置与前述图3至图5所示实施例类似，在此不再赘述。至于遮挡件20的固定方式，可以类似于前述实施例而将其固定于反应腔内壁10上；也可以将其固定于屏蔽件30的外表面上，只要使二者固定时保持绝缘而不构成闭合环路即可，例如，可以采用绝缘的连接件代替金属的螺钉或铆钉等。
本实施例提供的屏蔽结构在具有前述实施例所述的有益效果的同时，还具有这样的优点：其一，能够根据工艺需要而任意设置屏蔽件； 其二，可以根据不同的溅射靶材，选择更合适的材料制成的屏蔽件；其三，由于其中的屏蔽件不是设置于内壁上的，因而便于装配和更换。
请参阅图7，为本发明又一实施例提供的已装配于反应腔的屏蔽结构的横向剖视图。本实施例提供的屏蔽结构与图6所示实施例中的屏蔽结构类似，二者的区别在于：遮挡件20设置于屏蔽件30上的缺口的外侧，即，遮挡件20的内表面到反应腔的中心轴线的距离大于屏蔽件30的内表面到反应腔的中心轴线的距离，以使遮挡件20在屏蔽件30的外侧遮挡覆盖其上的缺口。
类似于图6所示，本实施例提供的屏蔽结构同样具有便于装配和更换、能够适应不同工艺和溅射靶材等优点。
请参阅图8，为本发明再一实施例提供的已装配于反应腔的屏蔽结构的横向剖视图。本实施例提供的屏蔽结构与图7所示实施例中的屏蔽结构类似，二者的区别在于：屏蔽件30包括基体32和设置于基体32内壁上的屏蔽层31。其中，基体32优选采用陶瓷等非金属材料，至于屏蔽层31的材料及其与基体32之间的设置方式，可以采用前述图3至图5所示实施例所述方式。
类似于图7所示，本实施例提供的屏蔽结构同样具有便于装配和更换、能够适应不同工艺和溅射靶材等优点。
通过对本发明提供的屏蔽结构的上述描述可以看出，本发明各实施例提供的屏蔽结构设置于反应腔内且包括遮挡件和屏蔽件，借助该屏蔽结构能够在360度的范围内对反应腔内壁进行遮蔽，有效地防止了溅射粒子和/或带电离子轰击反应腔内壁，从而对反应腔内壁形成有效保护，避免了溅射粒子在反应腔内壁上沉积出的金属层产生闭合环路，同时能够吸附溅射到其上的溅射粒子，避免了溅射粒子剥落后造成的颗粒污染。进一步地，由于遮挡件和屏蔽件为两个彼此独立的部件，因此，其不仅能够克服现有技术中的屏蔽件因其齿状沟槽中容易沉积溅射粒子而导致齿状沟槽闭合的问题，而且能够降低加工精度的要求，节约成本；此外，还能够有效避免现有技术中的一体结构的屏蔽件因受热膨胀而产生闭合环路或者对反应腔内壁造成损毁的问题。
此外，当屏蔽件为涂覆在反应腔内壁上的屏蔽膜层时，者包括涂覆在基体上的屏蔽膜层时，由于该膜层的厚度相比于现有技术中的屏 蔽件薄，因此，本发明实施例提供的屏蔽结构在不断受到带电离子和/或溅射粒子的轰击而导致温度升高时，其热膨胀的程度要远小于现有技术中的屏蔽件的膨胀程度，因此，不易出现因膨胀而导致的闭合环路现象。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种用于反应腔的屏蔽结构，其特征在于，所述屏蔽结构置于所述反应腔内且包括遮挡件和屏蔽件，其中
    所述屏蔽件环绕所述反应腔的内壁而设置，在所述屏蔽件上开设有至少一个沿轴向贯穿该屏蔽件的缺口；对于每一个所述缺口而言，均配置有一个与之相对设置的所述遮挡件，并且该遮挡件在该缺口所在平面内的投影覆盖所述缺口，且该遮挡件的内表面到所述反应腔的中心的距离不等于所述屏蔽件的内表面到所述反应腔的中心的距离，以使所述遮挡件与所述屏蔽件之间形成射频能量传送通道。
  2. 根据权利要求1所述的屏蔽结构，其特征在于，所述屏蔽件设置在所述反应腔的内壁上。
  3. 根据权利要求1所述的屏蔽结构，其特征在于，所述屏蔽件包括屏蔽层，所述屏蔽层为涂覆在所述反应腔的内壁上的膜层。
  4. 根据权利要求1所述的屏蔽结构，其特征在于，所述屏蔽件设置在所述反应腔的内壁的内侧。
  5. 根据权利要求4所述的屏蔽结构，其特征在于，所述屏蔽件包括基体和屏蔽层，所述屏蔽层为涂覆在所述基体的内表面的膜层。
  6. 根据权利要求5所述的屏蔽结构，其特征在于，所述基体的材料为绝缘材料。
  7. 根据权利要求3、5或6所述的屏蔽结构，其特征在于，所述屏蔽层的厚度为0.5-2mm。
  8. 根据权利要求2-7中任一项所述的屏蔽结构，其特征在于，所 述遮挡件的内表面到所述反应腔中心的距离小于所述屏蔽件的内表面到所述反应腔中心的距离。
  9. 根据权利要求4-7中任一项所述的屏蔽结构，其特征在于，所述遮挡件的内表面到所述反应腔中心的距离大于所述屏蔽件的内表面到所述反应腔中心的距离。
  10. 根据权利要求1所述的屏蔽结构，其特征在于，所述缺口的数量为多个，且沿所述反应腔的周向均匀分布。
  11. 根据权利要求1所述的屏蔽结构，其特征在于，所述屏蔽件的内表面和/或所述遮挡件的内表面的材质为金属良导体。
  12. 根据权利要求1所述的屏蔽结构，其特征在于，所述屏蔽件和/或所述遮挡件的内表面形成有凸起和/或凹坑。
PCT/CN2014/089667 2013-11-01 2014-10-28 用于反应腔的屏蔽结构 WO2015062469A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020167014590A KR20160079088A (ko) 2013-11-01 2014-10-28 반응챔버에 사용되는 차폐구조

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310533349.7A CN104593735B (zh) 2013-11-01 2013-11-01 一种用于反应腔的屏蔽结构
CN201310533349.7 2013-11-01

Publications (1)

Publication Number Publication Date
WO2015062469A1 true WO2015062469A1 (zh) 2015-05-07

Family

ID=53003341

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/089667 WO2015062469A1 (zh) 2013-11-01 2014-10-28 用于反应腔的屏蔽结构

Country Status (4)

Country Link
KR (1) KR20160079088A (zh)
CN (1) CN104593735B (zh)
TW (1) TWI530576B (zh)
WO (1) WO2015062469A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108461372B (zh) * 2017-02-21 2020-03-31 北京北方华创微电子装备有限公司 一种介质窗和等离子体处理装置
CN109801824B (zh) * 2017-11-15 2022-07-22 北京北方华创微电子装备有限公司 介质窗组件及反应腔室

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
EP0801413A1 (en) * 1996-03-12 1997-10-15 Varian Associates, Inc. Inductively coupled plasma reactor with faraday-sputter shield
JPH1018043A (ja) * 1996-07-03 1998-01-20 Applied Materials Inc プラズマ蒸着システム用スロット付ｒｆコイル
WO2000003055A1 (en) * 1998-07-13 2000-01-20 Tokyo Electron Arizona, Inc. Shield for ionized physical vapor deposition apparatus
CN1619011A (zh) * 2003-11-17 2005-05-25 三星电子株式会社 使用螺旋自谐振线圈的电离物理汽相沉积装置
CN1656243A (zh) * 2001-11-14 2005-08-17 应用材料有限公司 用于溅射和再溅射的自离子化及电感耦合等离子体
CN102543636A (zh) * 2010-12-27 2012-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 法拉第屏蔽及等离子体加工设备
CN103107055A (zh) * 2011-10-19 2013-05-15 Fei公司 用于电感耦合等离子体源的内部分离法拉第屏蔽

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124137A (ja) * 1998-10-13 2000-04-28 Hitachi Ltd プラズマ処理装置
US6730174B2 (en) * 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
KR101456810B1 (ko) * 2010-09-27 2014-10-31 베이징 엔엠씨 씨오., 엘티디. 플라즈마 가공 설비
CN102465260A (zh) * 2010-11-17 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 腔室组件及应用该腔室组件的半导体处理设备

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
EP0801413A1 (en) * 1996-03-12 1997-10-15 Varian Associates, Inc. Inductively coupled plasma reactor with faraday-sputter shield
JPH1018043A (ja) * 1996-07-03 1998-01-20 Applied Materials Inc プラズマ蒸着システム用スロット付ｒｆコイル
WO2000003055A1 (en) * 1998-07-13 2000-01-20 Tokyo Electron Arizona, Inc. Shield for ionized physical vapor deposition apparatus
CN1656243A (zh) * 2001-11-14 2005-08-17 应用材料有限公司 用于溅射和再溅射的自离子化及电感耦合等离子体
CN1619011A (zh) * 2003-11-17 2005-05-25 三星电子株式会社 使用螺旋自谐振线圈的电离物理汽相沉积装置
CN102543636A (zh) * 2010-12-27 2012-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 法拉第屏蔽及等离子体加工设备
CN103107055A (zh) * 2011-10-19 2013-05-15 Fei公司 用于电感耦合等离子体源的内部分离法拉第屏蔽

Also Published As

Publication number Publication date
CN104593735B (zh) 2017-10-13
TWI530576B (zh) 2016-04-21
TW201518530A (zh) 2015-05-16
CN104593735A (zh) 2015-05-06
KR20160079088A (ko) 2016-07-05

Similar Documents

Publication Publication Date Title
KR102020010B1 (ko) 웨이퍼 프로세싱 증착 차폐 부품
US20090308739A1 (en) Wafer processing deposition shielding components
TW201734237A (zh) 用於vhf-rf物理氣相沉積腔室內之預塗佈屏障
WO2001037310A3 (en) Method and apparatus for ionized physical vapor deposition
WO2012040986A1 (zh) 等离子体加工设备
EP1489643A3 (en) Method and apparatus for ionized physical vapor deposition
TWI686491B (zh) 用於沉積材料在基板上的方法及製程腔室
JP5654939B2 (ja) 成膜装置
KR20140108263A (ko) 스퍼터링 장치 및 실드
CN109075008A (zh) 与介电沉积一起使用的非消失的阳极
TW202018113A (zh) Pvd濺射沉積腔室中的傾斜磁控管
WO2015062469A1 (zh) 用于反应腔的屏蔽结构
TW202120722A (zh) 用於物理氣相沉積(pvd)介電質沉積的方法及設備
CN108779548B (zh) 成膜装置及压板环
TWI579880B (zh) 陽極層離子源與陽極層離子源離子束濺鍍模組
AU2016232864A1 (en) Anode shield
JP2007291477A (ja) スパッタリング装置
US9373485B2 (en) Apparatus and method for improved darkspace gap design in RF sputtering chamber
US10072330B2 (en) Shield mask mounting fitting for a sputtering apparatus
JP3031364B1 (ja) スパッタリング装置
JP2020186426A (ja) スパッタ成膜装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14858642

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20167014590

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 14858642

Country of ref document: EP

Kind code of ref document: A1