WO2015059200A1

WO2015059200A1 - Organic light-emitting diode and method for producing an organic light-emitting diode

Info

Publication number: WO2015059200A1
Application number: PCT/EP2014/072668
Authority: WO
Inventors: Thomas Wehlus
Original assignee: Osram Oled Gmbh
Priority date: 2013-10-24
Filing date: 2014-10-22
Publication date: 2015-04-30
Also published as: DE102013111736A1

Abstract

The invention relates to an organic light-emitting diode (10) in various exemplary embodiments. The organic light-emitting diode (10) has a carrier (12). First beam-shaping elements (40) are formed above the carrier (12). A first low-refraction layer (42) is formed above the first beam-shaping elements (40). The first beam-shaping elements (14) are at least partly embedded in the first low-refraction layer (40). A first electrode (20) is formed above the first low-refraction layer (40). An organic functional layer structure (22) is formed above the first electrode (20). A second electrode (23) is formed above the organic functional layer structure (22). A covering body (38) is formed above the second electrode (23).

Description

description

Organic light emitting diode and method for

Producing an organic light-emitting diode

The invention relates to an organic light-emitting diode and a method for producing an organic light-emitting diode. Organic light-emitting diodes, for example organic

Light emitting diodes (organic light emitting diode - OLED), find increasingly widespread application in the

General lighting, for example as a surface light source. For example, an OLED may be a stack of an anode, a cathode, and an organic functional one

Have layer system in between. The organic

functional layer system can be one or more

Emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures of two or more

Charge pair generation charge generating layer (CGL) and one or more electron block layers, also referred to as hole transport layer (HT), and / or one or more hole block layers, also called As an electron transport layer (s) ("electron transport layer" - ETL) to direct the current flow, the emission characteristic of OLEDs can only limitedly influenced by a change in the OLED stack without reducing the efficiency of the OLED internal decoupling is no influence on the OLED emission through the stack more possible because the internal

Decoupling is usually accompanied by a homogenization of the generated light and to a Lambertian

Radiation characteristic leads. For beam shaping, for example, in OLEDs

Microstructures, such as microlenses, with or without mirroring, are arranged on outer surfaces of the OLEDs. These microstructures thus sit in front of or behind the OLEDs and influence the light that has already left the corresponding OLEDs. However, the externally exposed structures on the OLED can be adversely affected by contamination or mechanical impairment. Furthermore, these structures change the outer

Appearance of the OLEDs.

In various embodiments, an organic light-emitting diode is provided which has a predetermined, for example non-homogeneous, radiation characteristic

whose external appearance when switched off corresponds to the appearance of a homogeneously illuminating organic light-emitting diode, and / or which has a high efficiency. In various embodiments, a method of making an organic light emitting diode is disclosed

which contributes to the organic light-emitting diode having a predetermined, for example non-homogeneous, radiation characteristic such that the external appearance of the organic light-emitting diode when switched off corresponds to the appearance of a homogeneously illuminating organic light-emitting diode, and / or the organic light-emitting diode has high efficiency, and / or that is easy and / or inexpensive to carry out.

In various embodiments, an organic light emitting diode is provided. The organic light-emitting diode has a support. First

Beam-forming elements of the organic light-emitting diode are formed over the carrier. A first

low refractive index layer of the organic light emitting diode is over the first beam shaping elements educated. The first beam-shaping elements are

at least partially embedded in the first low refractive layer. A first electrode of organic

light emitting diode is above the low refractive index

Layer formed. An organic functional

Layer structure is formed over the first electrode. A refractive index of the organic functional

Layer structure is larger than a first

Refractive index of the first low refractive index layer. A second electrode of the organic light emitting diode is over the organic functional layer structure

educated. A cover body of organic

light emitting diode is formed over the second electrode.

In various embodiments, an organic light emitting diode is provided. The organic light-emitting diode has a support. A first electrode of the organic light emitting diode is formed over the carrier. An organic functional

Layer structure is formed over the first electrode. A second electrode is formed over the organic functional layer structure. A second low refractive layer is formed over the second electrode. A second refractive index of the second low refractive index layer is smaller than the refractive index of the organic functional layered structure. Second beam-forming

Elements of the organic light emitting diode are formed over the second low refractive index layer and

partially embedded in the second low refractive layer. A cover body of the organic light-emitting diode is formed over the second beam-shaping elements.

The organic light-emitting diode (OLED) with the internal beam-forming elements allows a

Influencing the OLED emission characteristic without influencing the external appearance of the OLED when switched off and / or without the efficiency of the OLED influence. In particular, an inhomogeneous

Abstrahlcharakteristik, for example, a directional, radiation characteristic can be specified. In this

A relationship denotes a homogeneous emission characteristic, for example a lambertian emission characteristic, and an inhomogeneous emission characteristic denotes a deviation from the Lambertian emission characteristic

Radiation. The beam-forming elements thus produce an inhomogeneous light distribution.

The beam-forming elements are from outside,

formed, for example, a top and a bottom of the OLED spaced. The top of the OLED can

be formed for example by an outer side of the cover. The underside of the OLED can be formed for example by an outer side of the carrier. The respective low-refractive-index layer can, for example, embed the corresponding beam-shaping elements on one side and be planar on its other side and thus as

Planarisierungsschicht serve. That the jet-forming

Elements embedded in the corresponding low-index layer may mean, for example, that the beam-forming elements at least partially directly adjoin the corresponding low-refractive layer and / or are at least partially surrounded by the corresponding low-refractive layer, for example in the lateral direction.

In various embodiments, the organic light emitting diode comprises the first beam shaping elements and the first low refractive index layer and the second beam shaping elements and the second low refractive index layer.

In various embodiments, the limit

beam-forming elements directly to the carrier and / or directly to the cover body. For example, the first ones

beam-shaping elements in direct contact with the carrier. For example, the second beam-forming elements are in direct contact with the cover body.

In various embodiments, the beam-shaping elements are from the carrier and / or from the cover body

educated. In other words, the beam-shaping elements are formed integrally with the carrier and / or with the cover body. For example, the carrier forms on his

Outside the bottom of the OLED and on its inside the first beam-forming elements. For example, the cover body forms on its outer side the upper side of the OLED and on its inner side the second jet-forming

Elements .

In various embodiments form the

beam-forming elements an inside of the carrier and / or an inside of the cover body.

In various embodiments, a first coupling-out layer is formed between the first low-refractive-index layer and the first electrode. Alternatively or additionally, a second coupling-out layer is formed between the second low-refractive-index layer and the second electrode. The decoupling layers each serve to increase the

Lichtauskopplung and thus to increase the efficiency of the OLED. For example, the coupling-out layers homogenize the generated light in each case and produce a homogenous light distribution in the OLED before influencing the light generated by the beam-shaping elements. In other words, the light generated in the OLED can first be homogenized by means of one or more outcoupling layers and subsequently be directed by means of the beam-shaping elements. The high efficiency caused by the coupling-out layers remains unimpaired by the beam shaping of the beam-shaping elements. Thus, the combination of the outcoupling layer, the low-refractive layer and the beam-shaping elements results in an OLED that is directional and / or inhomogeneous radiation characteristics and a particularly high efficiency.

In various embodiments, the first

Decoupling layer and / or second decoupling one

Refractive index adapted to the refractive index of the organic functional layer structure. In other words, the coupling-out layers and the organic functional layer structure can be indexed. in the

In contrast, the low-index layers have a refractive index which differs from that of the coupling-out layers and / or the organic functional layer structure. For example, the refractive indices of the coupling-out layers and the organic functional layers are

Layer structure in a range between 1.7 and 1.8.

In various embodiments, the first

Decoupling layer and / or the second coupling-out layer

light scattering elements on. The light-scattering elements may be, for example, particles or cavities.

In various embodiments, the first and / or second low refractive index layer has a refractive index in a range between 1 and 1.6.

In various embodiments, the beam-shaping elements are half-lenticular, pyramidal,

truncated pyramidal, conical, frusto-conical, in the manner of Fresnel lenses and / or spherical sectional shape

educated .

In various embodiments, of the

beam-shaping elements, a beam-shaping layer

educated. In other words, the jet-forming

Elements are so related that one of you

closed layer is formed. In various embodiments, the outer dimensions of the first and / or second beam-shaping elements in

at least two dimensions smaller than 1 mm. In various embodiments, the first and / or second beam-shaping elements are completely or partially mirrored.

In various embodiments, a method of making an organic light emitting diode is disclosed

provided, for example, one of the above-explained organic light-emitting diodes. In the method, the carrier and the first beam-shaping elements are spaced from an outside of the carrier

educated. The first low refractive index layer is formed over the beam shaping elements. The first

Beam-forming elements are at least partially embedded in the first low refractive index layer. The first

Electrode gets over the low refractive layer

educated. The organic functional layer structure is formed over the first electrode. Of the

Refractive index of the organic functional

Layer structure is larger than a first refractive index of the low-refractive layer. The second electrode is formed over the organic functional layer structure. The cover body is formed over the second electrode.

provided, for example, one of the above-explained organic light-emitting diodes. In the method, the carrier is provided. The first electrode is formed over the carrier. The organic functional layer structure is formed over the first electrode. The second electrode is formed over the organic functional layer structure. The second low refractive index layer whose second refractive index is smaller than the refractive index of the organic functional one Layer structure, is over the second electrode

educated. The second beam-shaping elements and the cover body are formed. The second beam-shaping elements are formed spaced from an outer side of the cover body between the outside of the cover body and the second electrode. The second beam-forming elements are at least partially in the second

embedded low-refractive layer. Embodiments of the invention are illustrated in the figures and are explained in more detail below.

1 shows a sectional view of a conventional

organic light emitting diode; a sectional view of a layer structure of the conventional organic light-emitting diode according to Figure 1; a sectional view of a layer structure of an embodiment of an organic light emitting diode; a sectional view of a layer structure of an embodiment of an organic light emitting diode; Figure 5 is a sectional view of a layer structure

an embodiment of an organic light emitting diode;

FIG. 6 is a flowchart of an embodiment of a

Method for producing an organic light-emitting diode; FIG. 7 shows a flow diagram of an embodiment of a method for producing an organic light-emitting diode. In the following detailed description, reference is made to the accompanying drawings, which are part of this

In the description, specific embodiments are shown in which the invention may be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

For example, components of embodiments may be positioned in a number of different orientations, directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

That a layer or elements in whole or in part

may be, for example, mean that

only subregions of the layer or elements are mirrored and / or that the layer or the elements are at least partially transparent and / or that the corresponding layer or the corresponding elements are translucent only in one direction and reflective in another direction.

Fig. 1 shows a conventional organic light-emitting diode 1. The conventional organic light-emitting diode 1 has a support 12, for example, a substrate. On the carrier 12 is an opto-electronic

Layer structure formed.

The optoelectronic layer structure has a first electrode layer 14, which has a first contact section 16, a second contact section 18 and a first

Having electrode 20. The second contact section 18 is connected to the first electrode 20 of the optoelectronic

Layer structure electrically coupled. The first electrode 20 is electrically insulated from the first contact portion 16 by means of an electrical insulation barrier 21. Above the first electrode 20, an organic functional, in particular optically functional, layer structure 22 of the optoelectronic layer structure is formed. The

organic functional layer structure 22 may

For example, have one, two or more sub-layers, as explained in more detail below with reference to Figure 2. Over the organic functional layer structure 22, a second electrode 23 of the optoelectronic layer structure is formed, which is electrically coupled to the first contact section 16. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic

Layer structure. The second electrode 23 serves

corresponding to the first electrode as the cathode or anode of the optoelectronic layer structure.

Above the second electrode 23 and partially over the first contact portion 16 and partially over the second one

Contact portion 18 is an encapsulation layer 24 of FIG formed optoelectronic layer structure, which encapsulates the optoelectronic layer structure. In the

Encapsulation layer 24 are above the first contact portion 16, a first recess of the encapsulation layer 24 and the second contact portion 18, a second recess of the

Encapsulation layer 24 is formed. In the first recess of the encapsulation layer 24, a first contact region 32 is exposed and in the second recess of the

Encapsulation layer 24, a second contact region 34 is exposed. The first contact region 32 serves for

electrical contacting of the first contact portion 16 and the second contact portion 34 is for electrical

Contacting the second contact portion 18. Over the encapsulation layer 24 is an adhesive layer

36 trained. The adhesive layer 36 comprises, for example, an adhesive, for example an adhesive,

For example, a laminating adhesive, a paint and / or a resin. Above the adhesive layer 36 is a

Cover body 38 is formed. The adhesive layer 36 serves to attach the cover body 38 to the

Encapsulation layer 24. The cover body 38 has

For example, glass and / or metal. For example, the cover body 38 may be formed substantially of glass and a thin metal layer, such as a

Metal foil, and / or a graphite layer, such as a graphite laminate, have on the glass body. Of the

Cover body 38 serves to protect the conventional

organic light-emitting diode 1, for example against mechanical forces from the outside. Further, the cover body 38 may serve for distributing and / or dissipating heat, which in the conventional organic

light-emitting diode 1 is generated. For example, the glass of the cover body 38 as protection against external

Serve actions and the metal layer of the cover body 38 can for distributing and / or removing the operation of the conventional organic light-emitting diode. 1

serve arising heat. The conventional organic light-emitting diode 1 can for example be separated from a composite component by the carrier 12 along its in Fig. 1 laterally

shown outer edges are scored and then broken and by the cover body 38 is equally scratched along its lateral outer edges shown in Fig. 1 and then broken. In this cracking and breaking is the

Encapsulation layer 24 over the contact areas 32, 34 exposed. Subsequently, the first contact region 32 and the second contact region 34 in another

Process step are exposed, for example by means of an ablation process, for example by means of

Laser ablation, mechanical scratching or a

Etching method.

Optionally, the cover body 38 may also extend to an edge of the carrier 12 and / or the cover body 38 and the carrier 12 may be formed flush with each other at their sides. The contact regions 32, 34 can then be exposed in corresponding contact recesses of the cover body 38 and / or the carrier 12.

2 shows a sectional view of a layer structure of the conventional organic light-emitting diode 1 according to FIG. 1. The conventional organic light-emitting diode 1 may be in the form of a top emitter and / or a bottom emitter

be educated. If the conventional organic

light-emitting diode 1 is formed as a top emitter and bottom emitter, the conventional organic

light-emitting diode 1 as optically transparent

Component, for example, a transparent organic

LED, be designated. The conventional organic light emitting diode 1 has the carrier 12 and an active region over the carrier 12. Between the carrier 12 and the active region, a first, not shown, barrier layer, for example a first barrier thin film, be formed. The active one

Area has the first electrode 20, the organic

functional layer structure 22 and the second electrode 23 on. Over the active region, the encapsulation layer 24 is formed. The encapsulation layer 24 may serve as a second barrier layer, for example as a second barrier layer

Barrier thin film, be formed. About the active

Area and optionally over the encapsulation layer 24, the cover body 38 is arranged. The covering body 38 can be arranged, for example, by means of an adhesive layer 36 on the encapsulation layer 24.

The active region is an electrically and / or optically active region. The active region is, for example, the region of the conventional organic light-emitting diode 1, in which electric current for the operation of the

conventional organic light-emitting diode 1 flows.

The organic functional layer structure 22 may include one, two or more functional layered structure units and one, two or more intermediate layers between them

Have layer structure units.

The carrier 12 may be translucent or transparent. The carrier 12 serves as a carrier element for electronic elements or layers, for example light-emitting elements. The carrier 12 may comprise or be formed, for example, glass, quartz, and / or a semiconductor material or any other suitable material.

Further, the carrier 12 may be a plastic film or a

Laminate with one or more plastic films

have or be formed from it. The plastic may have one or more polyolefins. Furthermore, the

Plastic polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 12 may comprise or be formed from a metal, for example copper, silver, gold, Platinum, iron, for example a metal compound,

for example steel. The carrier 12 may be formed as a metal foil or metal-coated foil. The carrier 12 may be part of or form part of a mirror structure. The carrier 12 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way.

The first electrode 20 may be formed as an anode or as a cathode. The first electrode 20 may be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example metal and / or a conductive transparent oxide

(transparent conductive oxide, TCO) or a

Layer stacks of multiple layers comprising metals or TCOs. For example, the first electrode 20 may comprise a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

As the metal, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or

Alloys of these materials are used.

Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO 2 or In 2 O 3, ternary metal oxygen compounds such as AlZnO, Zn 2 SnO 4, Cd SnO 3, Zn SnO 3, Mgln 204, GalnO 3, Zn 2 In 2 O 5 or In 4 Sn 3 O 12 or mixtures are also included

different transparent conductive oxides to the group of TCOs. The first electrode 20 may comprise, as an alternative or in addition to the materials mentioned: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

By way of example, the first electrode 20 may have or be formed from one of the following structures: a network of metallic nanowires, for example of Ag, which are combined with conductive polymers

Carbon nanotubes made with conductive polymers

combined and / or graphene layers and composites. Furthermore, the first electrode 20 may comprise electrically conductive polymers or transition metal oxides. The first electrode 20 may, for example, have a layer thickness in a range of 10 nm to 500 nm,

For example, from 25 nm to 250 nm, for example, from 50 nm to 100 nm. The first electrode 20 may be a first electrical

Have connection to which a first electrical potential can be applied. The first electrical potential may be provided by a power source (not shown), such as a power source or a power source

Voltage source. Alternatively, the first electrical

Potential to be applied to the carrier 12 and the first

Electrode 20 are indirectly fed via the carrier 12. The first electrical potential may be, for example, the

Ground potential or another predetermined reference potential.

The organic functional layer structure 22 may include a hole injection layer, a hole transport layer, a

Emitter layer, an electron transport layer and / or an electron injection layer. The organic

Functional layer structure 22 may have a refractive index in a range between 1.7 and 1.8. The hole injection layer may be on or above the first

Electrode 20 may be formed. The hole injection layer may comprise or be formed from one or more of the following materials: HAT-CN, Cu (I) pFBz, MoOx, WOx, VOx, ReOx, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz , F16CuPc; NPB (Ν, Ν'-bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, '-bis (phenyl) -benzidine); TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro-NPB (N, 'bis (naphthalen-1-yl) -N,' -bis (phenyl) -spiro); DMFL-TPD Ν, Ν'-bis (3-methylphenyl) -Ν, Ν'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene); DPFL-NPB (Ν, Ν'-bis (naphthalen-1-yl) -Ν, Ν'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2, 2 ', 7, 7' tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro; Ν, Ν '

bis (phenanthrene-9-yl) -N, N'-bis (phenyl) -benzidine; 2.7 bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenylamino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolylamino) -phenyl] cyclohexane; 2, 2 ', 7, 7' tetra (N, N-di-tolyl) amino-spiro-bifluorene; and / or N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm. On or above the hole injection layer the

Hole transport layer may be formed. The

Hole transport layer may comprise or be formed from one or more of the following materials: NPB (Ν, Ν'- Bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, '-bis (phenyl) -benzidine); TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro-NPB (N, 'bis (naphthalen-1-yl) -N,' -bis (phenyl) -spiro); DMFL-TPD Ν, Ν'-bis (3-methylphenyl) -Ν, Ν'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene); DPFL-NPB (Ν, Ν'-bis (naphthalen-1-yl) -Ν, Ν'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2, 2 ', 7, 7' tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro; Ν, Ν '

bis (phenanthrene-9-yl) -N, '-bis (phenyl) -benzidine; 2, 7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, -di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolylamino) -phenyl] cyclohexane; 2, 2 ', 7, 7' -tetra (N, N-diol-tolyl) amino-spiro-bifluorene; and N, Ν, Ν ', Ν'-tetra-naphthalene-2-yl-benzidine.

The hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm,

for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the hole transport layer, the one or more emitter layers may be formed, for example with fluorescent and / or phosphorescent emitters. The emitter layer may be organic polymers, organic

Oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials The emitter layer may comprise or be formed from one or more of the following materials: organic or organometallic

Compounds such as derivatives of polyfluorene, polythiophene and Polyphenylene (eg 2- or 2, 5-substituted poly-p-phenylenevinylene) and metal complexes, for example

Iridium complexes such as blue phosphorescent FIrPic

(Bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red phosphorescent Ru ( dtb-bpy) 3 * 2 (PF6) (tris [4, 4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, 4-bis [ 4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9, 10-bis [N, -di (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2 -methyl-6-j ulolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited, for example by means of a wet-chemical process, for example a process

Spin-on method (also referred to as spin coating). The emitter materials may suitably be in one

Embedded matrix material, for example a technical ceramic or a polymer, for example an epoxy, or a silicone.

The first emitter layer may have a layer thickness in a range of about 5 nm to about 50 nm,

for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials. Alternatively, the

Emitter layer have multiple sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression. Alternatively or additionally, it can be provided in the beam path of the primary emission generated by these layers

To arrange converter material that the primary radiation At least partially absorbed and emitted a secondary radiation of different wavelengths, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary radiation, a white

Color impression results.

On or above the emitter layer, the

Be formed electron transport layer, for example, be deposited. The electron transport layer may include or be formed from one or more of the following materials: NET-18; 2, 2 ', 2 "- (1, 3, 5-benzyltriyl) tris (1-phenyl-1H-benzimidazoles); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1, 3 , 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthrolines (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2, 4-triazoles; 1, 3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1 , 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles; bis (2-methyl-8-quinolinolates) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalene 2-yl) -anthracenes; 2, 7-bis [2- (2,2'-bipyridine-6-yl) -1, 3, 4-oxadiazo-5-yl] -9,9-dimethylfluorene; 1, 3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazol-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthrolines;

Tris (2, 4, 6-trimethyl-3- (pyridin-3-yl) phenyl) boranes; 1-methyl-2 - (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides;

Naphthalenetetracarboxylic dianhydride or its imides;

Perylenetetracarboxylic dianhydride or its imides; and fabrics based on siloles with a

Silacyclopentadiene unit.

The electron transport layer may have a layer thickness

in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example about 20 nm. On or above the electron transport layer, the

Electron injection layer may be formed. The

Electron injection layer may include or may be formed of one or more of the following materials: NDN-26, MgAg, Cs 2 CO 3, Cs 3 PO 4, Na, Ca, K, Mg, Cs, Li, LiF; 2, 2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1H-benzimidazoles); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3 , 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthrolines (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2, 4-triazoles; 1, 3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1 , 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles; bis (2-methyl-8-quinolinolates) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalene 2-yl) -anthracenes; 2, 7-bis [2- (2,2'-bipyridine-6-yl) -1, 3, 4-oxadiazo-5-yl] -9,9-dimethylfluorene; 1, 3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazol-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthrolines;

Tris (2, 4, 6-trimethyl-3- (pyridin-3-yl) phenyl) boranes; 1-methyl-2 - (4 - (naphthalen-2-yl) phenyl) -1H-imidazo [4,5- f] [1,10] phenanthrolines; Phenyl-dipyrenylphosphine oxides;

Naphthalenetetracarboxylic dianhydride or its imides;

Silacyclopentadiene unit.

The electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.

In an organic functional layer structure 22 having two or more organic functional layer structure units, corresponding intermediate layers may be interposed between the organic functional layer structure units

be educated. The organic functional Layered structure units may each be formed individually according to one embodiment of the above-described organic functional layered structure 22. The intermediate layer may be formed as an intermediate electrode. The intermediate electrode may be electrically connected to an external voltage source. The external voltage source can be at the intermediate electrode

for example, a third electrical potential

provide. However, the intermediate electrode can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.

The organic functional layer structure unit may for example have a layer thickness of at most approximately 3 μm, for example a layer thickness of not more than approximately 1 μm, for example a layer thickness of approximately approximately 300 nm. The conventional organic light-emitting diode 1 may optionally have further functional layers.

For example, arranged on or over the one or more emitter layers or on or above the

Electron transport layer. The other functional

Layers can be internal or external, for example.

/ Decoupling structures, the functionality and thus the efficiency of the conventional organic

light emitting diode 1 can further improve. The second electrode 23 may be formed according to any one of the configurations of the first electrode 20, wherein the first electrode 20 and the second electrode 23 are the same or

can be designed differently. The second electrode 23 may be formed as an anode or as a cathode. The second electrode 23 may have a second electrical connection to which a second electrical potential can be applied. The second electrical potential may be provided by the same or a different source of energy as the first electrical potential. The second electrical

Potential may be different from the first electrical potential. The second electrical potential can

For example, have a value such that the

Difference from the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V. up to about 12 V.

The encapsulation layer 24 may also be referred to as

Thin-layer encapsulation may be referred to. The

Encapsulation layer 24 may be translucent or

be formed transparent layer. The

Encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric agents, especially to water (moisture) and oxygen. In other words, the encapsulation layer 24 is formed so as to be comprised of substances that are organic

can damage light-emitting diode, for example

Water, oxygen or solvents, not or at most can be penetrated at very low levels. The

Encapsulation layer 24 may be formed as a single layer, a layer stack, or a layered structure.

The encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia,

Titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide,

Silicon oxide, silicon nitride, silicon oxynitride,

Indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.

The encapsulation layer 24 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm

For example, a layer thickness of about 10 nm to about 100 nm, for example about 40 nm. The encapsulation layer 24 may comprise a high refractive index material, for example, one or more high refractive index materials, such as one

Refractive index of 1.5 to 3, for example from 1.7 to 2.5, for example from 1.8 to 2.

Optionally, the first barrier layer on the carrier 12 corresponding to a configuration of

Encapsulation layer 24 may be formed.

The encapsulation layer 24 may be formed, for example, by a suitable deposition method, e.g. by atomic layer deposition (ALD), e.g. a plasma-assisted

Plasma Enhanced Atomic Layer Deposition (PEALD)) or a plasmaless

Atomic deposition method (Plasma-less Atomic Layer

Deposition (PLALD)), or by means of a chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)), e.g. a plasma-assisted

Plasma Enhanced Chemical Vapor Deposition (PECVD) or a plasmalase

Gas phase deposition process (Plasma-less Chemical Vapor Deposition (PLCVD)), or alternatively by other means

suitable deposition method.

Optionally, a coupling or decoupling layer, for example as an external film (not shown) on the support 12 or as an internal coupling-out layer (not shown) in

Layer cross-section of the conventional organic

be formed light-emitting diode 1. The coupling / decoupling layer can be a matrix and distributed therein

Have scattering centers, wherein the average refractive index of the input / output coupling layer is greater than the average

Refractive index of the layer from which the electromagnetic

Radiation is provided. Furthermore, one or more antireflection coatings may additionally be formed. The adhesive layer 36 may include, for example, adhesive and / or paint, by means of which the cover body 38, for example, arranged on the encapsulation layer 24, for example glued, is. The adhesive layer 36 may be transparent or translucent. The

Adhesive layer 36 may, for example, comprise particles which scatter electromagnetic radiation, for example light-scattering particles. As a result, the adhesive layer 36 can act as a scattering layer and lead to an improvement in the color angle distortion and the coupling-out efficiency.

As light-scattering particles, dielectric

Be provided scattering particles, for example, from a

Metal oxide, for example silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or

Indium zinc oxide (IZO), gallium oxide (Ga20x) aluminum oxide, or titanium oxide. Other particles may also be suitable provided they have a refractive index that is different from the effective refractive index of the matrix of the adhesive layer 36

is different, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles. The adhesive layer 36 may have a layer thickness greater than 1 ym, for example, a layer thickness of several ym. In various embodiments, the adhesive may be a lamination adhesive. The adhesive layer 36 may have a refractive index that is less than the refractive index of the cover body 38. The adhesive layer 36 may include, for example, a

low-refractive adhesive, such as an acrylate having a refractive index of about 1.3. However, the adhesive layer 36 may also have a

Having high refractive adhesive, for example, has high refractive, non-diffusing particles and has a coating thickness-averaged refractive index, the about the mean refractive index of the organic

functional layer structure 22, for example in a range of about 1.6 to 2.5, for example from 1.7 to about 2.0.

On or above the active area may be a so-called

Getter layer or getter structure, i. a laterally structured getter layer (not shown) may be arranged. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed from a material that includes fabrics

are harmful to the active area, absorbs and binds. For example, a getter layer may include or be formed from a zeolite derivative. The getter layer may have a layer thickness greater than 1 ym,

for example, a layer thickness of several ym. In

According to various embodiments, the getter layer may comprise a lamination adhesive or in the

Adhesive layer 36 embedded.

The covering body 38 can be formed, for example, by a glass body, a metal foil or a sealed plastic film covering body. The cover body 38 can

For example, by means of a frit bonding (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric

Border areas of conventional organic

be arranged on the encapsulation layer 24 and the active region. The covering body 38 may, for example, have a refractive index (for example at a wavelength of 633 nm) of, for example, 1.3 to 3, for example 1.4 to 2, for example 1.5 to 1.8. The cover body 38, the adhesive layer 36 and / or the encapsulation layer 24 can also be used as

Cover be designated.

Fig. 3 shows a layer structure of a

Embodiment of an organic light-emitting Diode 10, wherein the organic light-emitting diode 10, for example, largely the above-explained conventional organic light-emitting diode. 1

may correspond and / or wherein the layer structure

For example, can largely correspond to the above-explained layer structure.

The organic light-emitting diode 10 has first beam-shaping elements 40 above the carrier 12. The first beam-shaping elements 40 are at least partially,

for example, in a lateral direction in a first

low-refractive layer 42 embedded. The first

Low refractive layer 42 is formed over the carrier 12 and over the first beam shaping elements 40. For example, the first low-refractive-index layer 42 is in direct contact with the first beam-shaping elements 40.

Optionally, the first low refractive layer 42 may be partially in direct physical contact with the carrier 12.

For example, the first low-refractive-index layer 42 in an edge region of the organic light-emitting diode 10 outside the first beam-shaping elements 40 may be in direct contact with the carrier 12. The first low refractive layer 42 has a first one

Refractive index which is smaller than the refractive index of the organic functional layer structure 22nd

For example, the first refractive index is in one

Range between 1 and 1.6. A refractive index of the material of the beam-shaping elements 40 may, for example, the refractive index of the organic functional

Layer structure 22 adapted to be or at least in the same range, for example in a range between 1.7 and 1.8. Alternatively or additionally, the refractive index of the first beam-shaping elements 40 may be matched to a refractive index of the carrier 12 or at least in a similar range. The first beam-shaping elements 40 are of a

Outside of the carrier 12, in Figure 3, the bottom of the organic light-emitting diode 10, spaced

educated. For example, the first beam-shaping elements 40 may also be referred to as a buried beam-forming structure. For example, the first

beam-forming elements 40 directly on the support 12th

be educated. The first beam-shaping elements 40 may optionally be formed on a barrier layer above the carrier 12. Optionally, the first beam-shaping elements 40 may be formed integrally with the carrier 12. In other words, the first beam-shaping elements 40 may be formed by the carrier 12, in particular by the material of the carrier 12. For example, the carrier 12 may be structured on its inside such that the

corresponding structure, the first beam-forming elements 40 has. Alternatively, the first beam-shaping elements 40 may be formed independently of the carrier 12 and then placed on the carrier 12.

The first beam-shaping elements 40 may be formed, for example, as three-dimensional bodies. For example, the first beam-shaping elements 40

semi-lenticular, pyramidal, truncated pyramidal, conical, frustoconical, be designed in the manner of Fresnel lenses and / or spherical sectional shape. The first beam-shaping elements 40 may be, for example

be formed coherent and / or one

form a coherent jet-forming layer. Optionally, the first beam-shaping elements 40 may be wholly or partially mirrored. The dimensions of the first

For example, beamforming elements 40 may be less than one millimeter in two dimensions, for example, on the order of a few to a few microns. For example, the beam-shaping elements in

lateral direction be less than a millimeter. The first beam-shaping elements 40 serve to shape the light generated in the organic functional layer structure 22, for example to focus and / or to direct it in a preferred direction. For example, the first beam-shaping elements 40 may contribute to the

organic light emitting diode 10 is an inhomogeneous one

Has emission characteristic and / or beam distribution. For example, the first beam-shaping elements 40 can contribute to the fact that the organic light-emitting diode 10 does not have a Lambertian radiation characteristic and / or

Has beam distribution. For example, the organic light emitting diode 10 may serve as a light spot.

The first low-refractive-index layer 42 may comprise, for example, an adhesive, for example an adhesive, for example a laminating adhesive, and / or an embedding material.

Optionally, a first coupling-out layer 44 may be formed over the first low-refractive-index layer 42. The first coupling-out layer 44 has a refractive index which corresponds to the refractive index of the organic functional

Layer structure 22 is adapted. For example, the refractive index of the first coupling-out layer 44 is in one

Range between 1.7 and 1.8.

The first coupling-out layer 44 is used in the

organic functional layer structure 22 generated and emitted in the direction of the carrier 12 to light

homogenize. For example, the first

Decoupling layer 44 help that the light leaving in the direction of the first low-refractive layer 42 has a Lambert 'see beam distribution. This can help to increase the efficiency of the organic

to increase light-emitting diode 10. If the first

Decoupling layer 44 is formed, so the first beam-forming elements 40 have no effect on the

Efficiency of the organic light emitting diode 10 and the first beam-shaping elements 40 convert the homogeneous

Light, which leaves the first coupling layer 44 in the direction of the first beam-forming elements 40, in inhomogeneous and / or directed light.

The first coupling-out layer 44 may, for example, a

Plastic, silicone, a metal oxide, for example, Ti02 or A1203, and / or air inclusions, for example, with fixed predetermined shape, have. Optionally, the first

Decoupling layer 44 to be wholly or partially mirrored.

FIG. 4 shows an exemplary embodiment of an organic light-emitting diode 10, which for example largely corresponds to one of the above-described organic ones

light emitting diodes 10 may correspond. The organic light-emitting diode 10 has a layer structure which, for example, can largely correspond to one of the layer structures explained above. The organic light-emitting diode 10 optionally has a second coupling-out layer 54 over the encapsulation layer 24. The second coupling-out layer 54 may, for example, correspond to a configuration of the first coupling-out layer 44, wherein, if the first and the second coupling-out layer 44, 54 are formed, the first and second coupling-out layers 44, 54 may be identical or different. The second coupling-out layer 54 has a refractive index which is adapted to the refractive index of the organic functional layer structure 22. For example, the refractive index of the second coupling-out layer 54 is in one

Range between 1.7 and 1.8.

The second coupling-out layer 54 can contribute to homogenizing the light generated in the organic functional layer structure 22 and radiated toward the covering body 38. For example, the second

Decoupling layer 54 contribute to that of the

organic functional layer structure 22 produced and in the direction of the covering body 38 radiated light has a Lambert 'see beam distribution.

The second coupling-out layer 54 may comprise, for example, a plastic, silicone, a metal oxide, for example TiO 2 or Al 2 O 3, and / or air inclusions, for example with a fixed predetermined shape. Optionally, the second

Decoupling layer 54 to be wholly or partially mirrored. Over the encapsulation layer 24 and possibly over the second

Decoupling layer 54 is a second low-refractive layer 52 is formed. The second low-refraction layer 52 may, for example, according to an embodiment of the first

low-refractive layer 22 may be formed, wherein, if the first and the second low-refractive layer 42, 52 are formed, the first and the second low-refractive layer 42, 52 may be formed the same or different. The second low refractive index layer 52 has a second refractive index which is smaller than the refractive index of the organic functional layered structure 22.

For example, the second refractive index lies in one

Range between 1 and 1.6. For example, the second refractive index may be equal to the first refractive index.

The second low-refractive-index layer 52 may be, for example, an adhesive, for example an adhesive,

For example, a laminating adhesive, and / or a

Have embedding material.

The organic light-emitting diode 10 has second beam-shaping elements 50 above and at least partially in the second low-refractive-index layer 52. The second

Beam-forming elements 50 are formed from an outer side, in Figure 4, the top of the organic light-emitting diode 10, the cover 38 spaced. The second beam-shaping elements 50 are at least partially embedded in the second low refractive layer 52, for example in the lateral direction. The second

For example, low-refractive-index layer 52 is in direct contact with the second beam-shaping elements 50.

Optionally, the second low refractive layer 52

partly in direct physical contact with the

Cover body 38 be. For example, the second

low refractive layer 52 in an edge region of

organic light-emitting diode 10 outside the second beam-shaping elements 50 in direct contact with the

Cover body 38 be.

The first beam-shaping elements 40 are of a

educated. For example, the second beam-shaping elements 50 may also be referred to as a burying beam-forming structure. For example, the second

Beam-forming elements 50 may be formed directly under the cover 38. The second beam-shaping elements 50 may optionally be formed on a barrier layer below the cover body 38. Optionally, the second

Beam-forming elements 50 may be integrally formed with the cover body 38. In other words, the second beam-shaping elements 50 may be separated from the cover body 38,

in particular of the material of the cover 38, be formed. For example, the cover body 38 may be structured on its inside so that the corresponding

Structure has the second beam-forming elements 50. Alternatively, the second beam-shaping elements 50 may be formed independently of the cover body 38 and then placed on the cover body 38. The second beam-shaping elements 50 may be formed, for example, as three-dimensional bodies. For example, the second beam-shaping elements 50

semi-lenticular, pyramidal, truncated pyramid, cone-shaped, frusto-conical, be designed in the manner of Fresnel lenses and / or spherical sectional shape. The second beam-shaping elements 50 may be, for example

be formed coherent and / or one

form a coherent jet-forming layer. Optionally, the second beam-forming elements 50 may be wholly or partially mirrored. The dimensions of the second

For example, beamforming elements 50 may be less than one millimeter in two dimensions, for example, on the order of a few to a few microns.

For example, the second beam-shaping elements 50 may be smaller than one millimeter in the lateral direction.

A refractive index of the material of the second beam-shaping elements 50 may, for example, be matched to the refractive index of the organic functional layer structure 22 or at least in the same range, for example in a range between 1.7 and 1.8. Alternatively or additionally, the refractive index of the second

beam-shaping elements 50 to a refractive index of

Cover body 38 adapted to be or at least lie in a similar area.

The second beam-shaping elements 50 serve to shape the light generated in the organic functional layer structure 22, for example to focus and / or to direct it in a preferred direction. For example, the second beam-shaping elements 50 may contribute to the

organic light emitting diode 10 is an inhomogeneous one

Has emission characteristic and / or beam distribution.

For example, the first beam-shaping elements 50 can contribute to the fact that the organic light-emitting diode 10 does not have Lambertian radiation characteristics and / or

If the second coupling-out layer 54 is formed, then the second beam-shaping elements 50 have no Effects on the efficiency of the organic light emitting diode 10 and the second beam shaping elements 50 convert the homogeneous light leaving the second coupling layer 54 towards the second beam shaping elements 50 into inhomogeneous and / or directed light.

Fig. 5 shows an embodiment of an organic light-emitting diode 10, for example, largely one of the above-explained organic

light emitting diodes 10 may correspond. In particular, FIG. 5 shows a layer structure of the light-emitting diode 10, which for example largely corresponds to one of those in the art

Previous explained layer structures may correspond. The organic light-emitting diode 10 has the first beam-shaping elements 40, the first one

low-refractive-index layer 42, the second beam-shaping elements 50, and the second low-refractive-index layer 52. Optionally, the light-emitting diode 10 may have the first coupling-out layer 44 and / or the second coupling-out layer 54.

The beam-shaping elements 40, the first low-refractive-index layer 42, optionally the first coupling-out layer 44, the two beam-shaping elements 50, the second low-refractive-index layer 52 and / or possibly the second coupling-out layer 54 can be explained, for example, according to a respective embodiment of the corresponding above

beam-forming elements 40, 50 and / or layers 42, 44, 52, 54 may be formed.

6 shows a flow chart of an embodiment of a method for producing an organic

light emitting diode, for example one of the

Previously explained organic light emitting diodes 10. In a step S2, a carrier is provided and / or formed, for example the carrier 12 explained above. In a step S4, beam-forming elements are formed

formed, for example, the first jet-forming

Elements 40 above the carrier 12. For example, the first beam-forming elements 40 are formed integrally with the carrier 12. Alternatively, the first

beam-forming elements 40 formed independently of the carrier 12 and arranged on this or optionally on a barrier layer above the carrier 12.

In a step S6, a low refractive index layer is formed, for example the first low refractive index

Layer 42 over the beam-forming elements 40th

For example, the first beam-shaping elements 40 are embedded in the first low-refractive-index layer 42. For example, the first low refractive layer 42 may be formed facing away from the first

Beam-forming elements 40 provides a flat surface for the application of the subsequent layer and thus that it serves as a planarization layer. Alternatively or additionally, the first low-index layer 42 can serve as an adhesive and / or as a bonding agent for the subsequent layer.

In an optional step S8, a decoupling layer may be formed, for example, the first

Decoupling layer 44 are formed over the first low-refractive-index layer 42.

In a step S10, a first electrode is formed, for example, the first electrode 20 is formed over the first low-refractive-index layer 42 and / or possibly above the first coupling-out layer 44. In a step S12 becomes an organic functional

Layer structure formed. For example, the organic functional layer structure 22 is formed over the first electrode 20.

In a step S14, a second electrode is formed. For example, the second electrode 23 is above the

organic functional layer structure 22 is formed. In a step S16, a cover is formed.

By way of example, the cover is formed by forming the encapsulation layer 24 over the second electrode 23 and / or by placing the cover body 38 over the second electrode 23, for example on the encapsulation layer 24, by means of the adhesive layer 36.

FIG. 7 shows a flow chart of an embodiment of a method for producing an organic

light emitting diode, for example one of the

Previously explained organic light emitting diodes 10.

In a step S20, a carrier is formed.

For example, the carrier 12 is formed and / or provided.

In a step S22, a first electrode is formed. For example, the first electrode 20 is formed above the carrier 12.

In a step S24 becomes an organic functional

In a step S26, a second electrode is formed. For example, the second electrode 23 is above the

organic functional layer structure 22 is formed. In an optional step S28, a decoupling layer can be formed. For example, the second

Decoupling layer 54 are formed over the second electrode 23.

In a step S30, a low refractive layer is formed. By way of example, the second low-refractive-index layer 52 is formed over the second electrode 23 and / or optionally over the second coupling-out layer 54. The second low-refractive-index layer 54 can act as an adhesive and / or as a bonding agent for the following elements and / or

Layers serve. In a step S32, beam-shaping elements

educated. For example, the second

beam-forming elements 50 formed over and / or at least partially in the second low-refractive layer 52. The second beam-shaping elements 50 may be formed on or on an inner side of the cover body 38, for example. The second beam-shaping elements 50 may, for example, be formed integrally with the cover body 38. In a step S34, a cover is formed. The cover may, for example, have the covering body 38 and / or the adhesive layer 36. For example, the cover body 38 can be arranged with or without the second beam-forming elements 50. Alternatively or additionally, the cover body 38 by means of the second

low-refractive layer 52 may be disposed over the encapsulation layer 24 and / or optionally over the second outcoupling layer 54. In this case, the second low-refractive-index layer 52 can be used, for example, as an adhesive and / or as an adhesive

Planarisierungsschicht serve.

Optionally, the methods illustrated in FIGS. 6 and 7 may be combined such that the first and second second beam-shaping elements 40, 50, the first and the second low-refractive-index layer 52, 54 and / or optionally the first and the second coupling-out layer 44, 54 in a single organic light-emitting diode 10,

For example, the organic light-emitting diode 10 according to Figure 5, are formed. Accordingly, for example, the steps S2 - S14 of FIG. 6

illustrated method may be combined with steps S28-S34 of the method illustrated in FIG.

The invention is not limited to those specified

Embodiments limited. For example, the organic light emitting diodes 10 shown may have fewer or additional layers, for example

Barrier layers and / or decoupling layers. Furthermore, the corresponding methods may correspondingly have more or fewer steps for forming additional or fewer layers, in particular barrier layers and / or coupling-out layers.

Claims

claims

1. Organic light emitting diode (10), with

a support (12),

- First beam-shaping elements (40), above the

Carrier (12) are formed

a first low-refraction layer (42) formed over the first beam-shaping elements (40), the first beam-shaping elements (40) at least partially projecting into the first low-refractive layer (40).

are embedded,

a first electrode (20) formed over the first low refractive index layer (40),

an organic functional layer structure (22) formed over the first electrode (20), wherein a refractive index of the organic functional

Layer structure (22) is greater than the refractive index of the first low-refractive layer (42),

a second electrode (23) formed over the organic functional layer structure (22)

a cover body (38) overlying the second

Electrode (23) is formed.

2. Organic light emitting diode (10), with

a support (12),

a first electrode (20) formed over the support (12),

an organic functional layer structure formed over the first electrode, a second electrode formed over the organic functional layer structure

- A second low-refractive layer (52) which is formed over the second electrode (23) and whose

Refractive index is smaller than the refractive index of the organic functional layer structure (22),

- Second beam-forming elements (50) which are formed over the second low-refractive layer (52) and partially embedded in the second low refractive layer (52),

- A cover body (38) over the second

beam-forming elements (50) is formed.

3. Organic light-emitting diode (10) according to any one of the preceding claims, wherein the beam-forming elements (40, 50) directly adjacent to the carrier (12) and / or directly to the cover body (38).

4. Organic light-emitting diode (10) according to any one of claims 1 or 2, wherein the beam-forming elements (40, 50) of the carrier (12) and / or of the cover body (38) are formed.

5. Organic light emitting diode (10) according to claim 4, wherein the beam-forming elements (40, 50) form an inside of the carrier and / or an inside of the cover body s (38).

6. Organic light emitting diode (10) according to any one of the preceding claims, wherein between the first

low-refractive layer (42) and the first electrode (20), a first coupling-out layer (44) is formed and / or in which between the second low-refractive layer (52) and the second electrode (23), a second coupling-out layer (54) is formed.

7. Organic light-emitting diode (10) according to claim 6, wherein the first outcoupling layer (44) and / or second

Decoupling layer (54) has a refractive index that matches the refractive index of the organic functional

Layer structure (22) is adjusted.

8. Organic light-emitting diode (10) according to one of claims 6 or 7, in which the first coupling-out layer (44) and / or the second coupling-out layer (54) has light-scattering elements.

The organic light emitting diode (10) of any one of the preceding claims, wherein the first low refractive index layer (42) and / or the second low refractive index layer (52) has a refractive index in a range between 1 and 1.6.

10. Organic light-emitting diode (10) according to one of the preceding claims, in which the beam-shaping elements (40, 50) are in the form of a half-lobe, pyramid,

truncated pyramidal, conical, frusto-conical, designed in the manner of Fresnel lenses and / or spherical sectional shape.

11. An organic light emitting diode (10) according to any one of the preceding claims, wherein the beam-forming

Elements (40, 50) is formed a beam-shaping layer.

12. Organic light emitting diode (10) according to any one of the preceding claims, wherein the outer dimensions of the

beam-forming elements (40, 50) at least in two

Dimensions are smaller than 1 mm.

13. Organic light emitting diode (10) according to any one of the preceding claims, wherein a surface of the

beam-forming elements (40, 50) is completely or partially mirrored.

14. Method for producing an organic

light emitting diode (10), wherein

a carrier (12) and first beam-shaping elements (40) are formed at a distance from an outer side of the carrier (12),

a first low refractive layer (42) is formed over the first beam shaping elements (40), the first beam shaping elements (40) being at least partially embedded in the first low refractive layer (42), a first electrode (20) is formed over the first low refractive index layer (42),

- An organic functional layer structure (22) over the first electrode (20) is formed, wherein a refractive index of the organic functional

Layer structure (22) is greater than a first

Refractive index of the first low refractive index layer (42),

a second electrode (23) is formed over the organic functional layer structure (22),

- A cover body (38) over the second electrode (23) is formed.

15. Process for producing an organic

light emitting diode (10), wherein

a support (12) is provided,

a first electrode (20) is formed over the support (12),

an organic functional layer structure (22) is formed over the first electrode (20),

a second low refractive index layer (52) whose second refractive index is smaller than the refractive index of the organic functional layered structure (22) is formed over the second electrode (23), and

- Second beam-forming elements (50) and a

Cover body (38) are formed, wherein the second beam-forming elements (50) from an outer side of the

Cover body (38) spaced between the outside of the cover body (38) and the second electrode (23) are formed and wherein the second beam-forming elements (50) at least partially embedded in the second low-refractive layer (52).