DE102013111736A1 - Organic light-emitting diode and method for producing an organic light-emitting diode - Google Patents

Abstract

In various embodiments, an organic light emitting diode (10) is provided. The organic light emitting diode (10) has a carrier (12). First beam-shaping elements (40) are formed above the carrier (12). A first low refractive layer (42) is formed over the first beam shaping elements (40). The first beam-shaping elements (40) are at least partially embedded in the first low-refraction layer (40). A first electrode (20) is formed over the first low refractive layer (40). An organic functional layer structure (22) is formed over the first electrode (20). A second electrode (23) is formed over the organic functional layer structure (22). A cover body (38) is formed over the second electrode (23).

Description

The invention relates to an organic light-emitting diode and a method for producing an organic light-emitting diode.

Organic light-emitting diodes, for example organic light-emitting diodes (OLEDs), are finding widespread application in general lighting, for example as surface light sources. For example, an OLED may include a stack of an anode, a cathode, and an organic functional layer system therebetween. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures each consisting of two or more charge generating layers (CGL) for charge carrier pair generation, and one or more emitter layers multiple electron block layers, also referred to as hole transport layer (HTL), and / or one or more hole block layers, also referred to as electron transport layer (s) (ETL), to direct current flow , exhibit.

The emission characteristics of OLEDs can only be influenced to a limited extent by a change in the OLED stack without reducing the efficiency of the OLED. In the case of OLEDs with efficient internal decoupling, it is no longer possible to influence the OLED emission through the stack since the internal decoupling generally involves a homogenization of the generated light and leads to a lambertian emission characteristic.

In the case of OLEDs, for example, microstructures, for example microlenses, with or without mirroring, can be arranged on outer surfaces of the OLEDs for beam shaping. These microstructures thus sit in front of or behind the OLEDs and influence the light that has already left the corresponding OLEDs. However, the externally exposed structures on the OLED can be adversely affected by contamination or mechanical impairment. Furthermore, these structures change the external appearance of the OLEDs.

In various embodiments, an organic light-emitting diode is provided which has a predetermined, for example non-homogeneous, radiation characteristic whose external appearance when switched off corresponds to the appearance of a homogeneously illuminating organic light-emitting diode, and / or which has a high efficiency.

In various embodiments, a method is provided for producing an organic light-emitting diode, which contributes to the organic light-emitting diode having a predetermined, for example non-homogeneous, radiation characteristic such that the external appearance of the organic light-emitting diode when switched off is the appearance of a homogeneously luminous organic light corresponds to light-emitting diode, and / or that the organic light-emitting diode has a high efficiency, and / or that is simple and / or inexpensive to carry out.

In various embodiments, an organic light emitting diode is provided. The organic light-emitting diode has a support. First beam-shaping elements of the organic light-emitting diode are formed above the carrier. A first low refractive index layer of the organic light emitting diode is formed over the first beam shaping elements. The first beam-shaping elements are at least partially embedded in the first low-refractive-index layer. A first electrode of the organic light emitting diode is formed over the low refractive index layer. An organic functional layer structure is formed over the first electrode. A refractive index of the organic functional layer structure is larger than a first refractive index of the first low-refractive layer. A second electrode of the organic light emitting diode is formed over the organic functional layer structure. A cover body of the organic light-emitting diode is formed over the second electrode.

In various embodiments, an organic light emitting diode is provided. The organic light-emitting diode has a support. A first electrode of the organic light emitting diode is formed over the carrier. An organic functional layer structure is formed over the first electrode. A second electrode is formed over the organic functional layer structure. A second low refractive layer is formed over the second electrode. A second refractive index of the second low refractive index layer is smaller than the refractive index of the organic functional layered structure. Second beam-shaping elements of the organic light-emitting diode are formed over the second low refractive index layer and partially embedded in the second low refractive index layer. A cover body of the organic light-emitting diode is formed over the second beam-shaping elements.

The organic light-emitting diode (OLED) with the internal jet-forming Elements makes it possible to influence the OLED emission characteristic without influencing the external appearance of the OLED when switched off and / or without influencing the efficiency of the OLED. In particular, an inhomogeneous emission characteristic, for example a directional emission characteristic, can be predetermined. In this context, a homogeneous emission characteristic denotes, for example, a Lambertian emission characteristic and an inhomogeneous emission characteristic designates a radiation characteristic deviating from the Lambertian emission characteristic. The beam-forming elements thus produce an inhomogeneous light distribution.

The beam-shaping elements are formed spaced apart from outer sides, for example an upper side and a lower side of the OLED. The upper side of the OLED can be formed, for example, by an outer side of the covering body. The underside of the OLED can be formed for example by an outer side of the carrier. The respective low-refractive-index layer can, for example, embed the corresponding beam-shaping elements on its one side and be planar on its other side and thus serve as a planarization layer. The fact that the beam-shaping elements are embedded in the corresponding low-refractive layer may mean, for example, that the beam-forming elements at least partially directly adjoin the corresponding low-refractive layer and / or are at least partially surrounded by the corresponding low-refractive layer, for example in the lateral direction.

In various embodiments, the organic light emitting diode comprises the first beam shaping elements and the first low refractive index layer and the second beam shaping elements and the second low refractive index layer.

In various embodiments, the beam-shaping elements directly adjoin the carrier and / or directly to the cover body. For example, the first beam-shaping elements are in direct contact with the carrier.

For example, the second beam-forming elements are in direct contact with the cover body.

In various embodiments, the beam-shaping elements are formed by the carrier and / or by the cover body. In other words, the beam-shaping elements are formed integrally with the carrier and / or with the cover body. For example, the carrier forms on its outside the underside of the OLED and on its inside the first beam-shaping elements. For example, the cover body forms on its outer side the upper side of the OLED and on its inner side the second beam-forming elements.

In various embodiments, the beam-shaping elements form an inside of the carrier and / or an inside of the cover body.

In various embodiments, a first coupling-out layer is formed between the first low-refractive-index layer and the first electrode. Alternatively or additionally, a second coupling-out layer is formed between the second low-refractive-index layer and the second electrode. The coupling-out layers each serve to increase the light extraction and thus to increase the efficiency of the OLED. For example, the coupling-out layers homogenize the generated light in each case and produce a homogenous light distribution in the OLED before influencing the light generated by the beam-shaping elements. In other words, the light generated in the OLED can first be homogenized by means of one or more outcoupling layers and subsequently be directed by means of the beam-shaping elements. The high efficiency caused by the coupling-out layers remains unimpaired by the beam shaping of the beam-shaping elements. Thus, the combination of the coupling-out layer, the low-refraction layer and the beam-shaping elements results in an OLED having a directional and / or inhomogeneous emission characteristic and a particularly high efficiency.

In various embodiments, the first coupling-out layer and / or the second coupling-out layer has a refractive index that is matched to the refractive index of the organic functional layer structure. In other words, the coupling-out layers and the organic functional layer structure can be indexed. In contrast, the low-index layers have a refractive index which differs from that of the coupling-out layers and / or the organic functional layer structure. For example, the refractive indices of the coupling-out layers and the organic functional layer structure are in a range between 1.7 and 1.8.

In various embodiments, the first coupling-out layer and / or the second coupling-out layer has light-scattering elements. The light-scattering elements may be, for example, particles or cavities.

In various embodiments, the first and / or second low refractive index layer has a refractive index in a range between 1 and 1.6.

In various embodiments, the beam-shaping elements are half-lens-shaped, pyramid-shaped, truncated pyramidal, conical, frusto-conical, designed in the manner of Fresnel lenses and / or spherical sectional shape.

In various embodiments, a beam-shaping layer is formed by the beam-shaping elements. In other words, the beam-shaping elements may be related such that they form a closed layer.

In various embodiments, the outer dimensions of the first and / or second beam-forming elements are smaller than 1 mm in at least two dimensions.

In various embodiments, the first and / or second beam-shaping elements are completely or partially mirrored.

In various embodiments, a method of fabricating an organic light emitting diode, such as one of the organic light emitting diodes discussed above, is provided. In the method, the carrier and the first beam-shaping elements are formed spaced from an outside of the carrier. The first low refractive index layer is formed over the beam shaping elements. The first beam-shaping elements are at least partially embedded in the first low-refractive-index layer. The first electrode is formed over the low refractive index layer. The organic functional layer structure is formed over the first electrode. The refractive index of the organic functional layer structure is larger than a first refractive index of the low-refractive layer. The second electrode is formed over the organic functional layer structure. The cover body is formed over the second electrode.

In various embodiments, a method of fabricating an organic light emitting diode, such as one of the organic light emitting diodes discussed above, is provided. In the method, the carrier is provided. The first electrode is formed over the carrier. The organic functional layer structure is formed over the first electrode. The second electrode is formed over the organic functional layer structure. The second low refractive index layer whose second refractive index is smaller than the refractive index of the organic functional layered structure is formed over the second electrode. The second beam-shaping elements and the cover body are formed. The second beam-shaping elements are formed spaced from an outer side of the cover body between the outside of the cover body and the second electrode. The second beam-shaping elements are at least partially embedded in the second low-refractive-index layer.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 a sectional view of a conventional organic light-emitting diode;

2 a sectional view of a layer structure of the conventional organic light-emitting diode according to 1 ;

3 a sectional view of a layer structure of an embodiment of an organic light emitting diode;

4 a sectional view of a layer structure of an embodiment of an organic light emitting diode;

5 a sectional view of a layer structure of an embodiment of an organic light emitting diode;

6 a flow diagram of an embodiment of a method for producing an organic light-emitting diode;

7 a flowchart of an embodiment of a method for producing an organic light-emitting diode.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein are consistent with each other can be combined, unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

The fact that a layer or elements are completely or partially mirrored may mean, for example, that only partial areas of the layer or elements are mirrored and / or that the layer or elements are at least partially permeable and / or that the corresponding layer or layers corresponding elements are translucent only in one direction and reflective in another direction.

1 shows a conventional organic light-emitting diode 1 , The conventional organic light-emitting diode 1 has a carrier 12 , For example, a substrate on. On the carrier 12 an optoelectronic layer structure is formed.

The optoelectronic layer structure has a first electrode layer 14 on that a first contact section 16 , a second contact section 18 and a first electrode 20 having. The second contact section 18 is with the first electrode 20 the optoelectronic layer structure electrically coupled. The first electrode 20 is from the first contact section 16 by means of an electrical insulation barrier 21 electrically isolated. Above the first electrode 20 is an organic functional, in particular optically functional, layer structure 22 , the optoelectronic layer structure formed. The organic functional layer structure 22 For example, it may have one, two or more sublayers, as discussed below with reference to FIG 2 explained in more detail. Over the organic functional layer structure 22 is a second electrode 23 of the optoelectronic layer structure, which is electrically connected to the first contact section 16 is coupled. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23 serves corresponding to the first electrode as the cathode or anode of the optoelectronic layer structure.

Above the second electrode 23 and partially over the first contact portion 16 and partially over the second contact portion 18 is an encapsulation layer 24 the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. In the encapsulation layer 24 are above the first contact section 16 a first recess of the encapsulation layer 24 and over the second contact portion 18 a second recess of the encapsulation layer 24 educated. In the first recess of the encapsulation layer 24 is a first contact area 32 exposed and in the second recess of the encapsulation layer 24 is a second contact area 34 exposed. The first contact area 32 serves for electrically contacting the first contact section 16 and the second contact area 34 serves for electrically contacting the second contact section 18 ,

Above the encapsulation layer 24 is an adhesive layer 36 educated. The adhesive layer 36 has, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a lacquer and / or a resin. Over the adhesive layer 36 is a cover body 38 educated. The adhesive layer 36 serves to fasten the cover body 38 at the encapsulation layer 24 , The cover body 38 has, for example, glass and / or metal. For example, the cover body 38 may be formed essentially of glass and a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional organic light-emitting diode 1 , for example, from mechanical forces from the outside. Furthermore, the cover body 38 for distributing and / or dissipating heat, which in the conventional organic light-emitting diode 1 is produced. For example, the glass of the cover body 38 serve as protection against external influences and the metal layer of the cover body 38 can be used to distribute and / or dissipate the operation of the conventional organic light-emitting diode 1 serve arising heat.

The conventional organic light-emitting diode 1 For example, can be separated from a composite component by the carrier 12 along its in 1 laterally outlined edges and then broken and by the cover body 38 equally along its in 1 shown side edges scratched and then broken. In this scribing and breaking becomes the encapsulation layer 24 over the contact areas 32 . 34 exposed. Following can be the first contact area 32 and the second contact area 34 in a further process step be exposed, for example by means of an ablation process, for example by means of laser ablation, mechanical scratching or an etching process.

Optionally, the cover body 38 even to the edge of the carrier 12 extend and / or the cover body 38 and the carrier 12 may be formed flush with each other at their sides. The contact areas 32 . 34 can then in corresponding contact recesses of the cover body 38 and / or the vehicle 12 be exposed.

2 shows a sectional view of a layer structure of the conventional organic light-emitting diode 1 according to 1 , The conventional organic light-emitting diode 1 can be designed as a top emitter and / or bottom emitter. If the conventional organic light emitting diode 1 is designed as a top emitter and bottom emitter, the conventional organic light emitting diode 1 be referred to as optically transparent component, such as a transparent organic light-emitting diode.

The conventional organic light-emitting diode 1 indicates the carrier 12 and an active area over the carrier 12 on. Between the carrier 12 and the active region, a first barrier layer, not shown, for example, a first barrier layer, be formed. The active area has the first electrode 20 , the organic functional layer structure 22 and the second electrode 23 on. Above the active area is the encapsulation layer 24 educated. The encapsulation layer 24 may be formed as a second barrier layer, for example as a second barrier thin layer. Above the active area and optionally above the encapsulation layer 24 , is the cover body 38 arranged. The cover body 38 For example, by means of an adhesive layer 36 on the encapsulation layer 24 be arranged.

The active region is an electrically and / or optically active region. The active region is, for example, the range of the conventional organic light-emitting diode 1 in which electrical current for operation of the conventional organic light-emitting diode 1 flows.

The organic functional layer structure 22 may comprise one, two or more functional layered structure units and one, two or more intermediate layers between the layered structure units.

The carrier 12 can be translucent or transparent. The carrier 12 serves as a carrier element for electronic elements or layers, for example light-emitting elements. The carrier 12 For example, it may include or be formed from glass, quartz, and / or a semiconductor material, or any other suitable material. Furthermore, the carrier can 12 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may have one or more polyolefins. Further, the plastic may include polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 12 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel. The carrier 12 may be formed as a metal foil or metal-coated foil. The carrier 12 may be part of or form part of a mirror structure. The carrier 12 may have a mechanically rigid region and / or a mechanically flexible region or be formed.

The first electrode 20 may be formed as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 has an electrically conductive material, for example metal and / or a conductive transparent oxide (TCO) or a layer stack of several layers comprising metals or TCOs. The first electrode 20 For example, a layer stack may comprise a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

As the metal, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials can be used.

Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO2 or In2O3, ternary metal oxygen compounds such as AlZnO, Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5 or In4Sn3O12 or mixtures of different transparent conductive oxides also belong to the group of TCOs.

The first electrode 20 may alternatively or in addition to the materials mentioned include: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires. For example, the first electrode 20 have or consist of one of the following structures: a network of metallic nanowires, such as Ag, combined with conductive polymers, a network of carbon nanotubes combined with conductive polymers, and / or graphene layers and composites. Furthermore, the first electrode 20 having electrically conductive polymers or transition metal oxides.

The first electrode 20 may for example have a layer thickness in a range of 10 nm to 500 nm, for example from 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 20 may have a first electrical connection to which a first electrical potential can be applied. The first electrical potential may be provided by a power source (not shown), such as a power source or a voltage source. Alternatively, the first electrical potential to the carrier 12 be created and the first electrode 20 over the carrier 12 be supplied indirectly. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

The organic functional layer structure 22 may comprise a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and / or an electron injection layer. The organic functional layer structure 22 may have a refractive index in a range between 1.7 and 1.8.

The hole injection layer may be on or over the first electrode 20 be educated. The hole injection layer may comprise or be formed from one or more of the following materials: HAT-CN, Cu (I) pFBz, MoOx, WOx, VOx, ReOx, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz , F16CuPc; NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (N, N-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N 'bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2.7 bis [N, N-bis (9,9-spiro-bifluorene-2-yl) -amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and / or N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.

On or above the hole injection layer, the hole transport layer may be formed. The hole transport layer may comprise or be formed from one or more of the following materials: NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl,) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (N, N-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N 'bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the hole transport layer, the one or more emitter layers may be formed, for example with fluorescent and / or phosphorescent emitters. The emitter layer may be organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules ("small molecules") or a Combination of these materials. The emitter layer may comprise or be formed from one or more of the following materials: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, For example, iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtbbpy) 3 * 2 (PF6) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4 , 4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di (p-toyl) amino] anthracene) and red fluorescent DCM2 (4 Dicyanomethylene) -2-methyl-6-ylolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited, for example, by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating). The emitter materials may be suitably embedded in a matrix material, for example a technical ceramic or a polymer, for example an epoxy, or a silicone.

The first emitter layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials. Alternatively, the emitter layer may comprise a plurality of sub-layers which emit light of different colors. By mixing the different colors, the emission of light may result in a white color impression. Alternatively or additionally, it may be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, resulting in a (not yet white) primary radiation by the combination of primary radiation and secondary radiation Radiation produces a white color impression.

On or above the emitter layer, the electron transport layer may be formed, for example deposited. The electron transport layer may include or be formed from one or more of the following materials: NET-18; 2,2 ', 2' '- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluorene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron transport layer may have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the electron transport layer, the electron injection layer may be formed. The electron injection layer may include or be formed from one or more of the following materials: NDN-26, MgAg, Cs 2 CO 3, CS 3 PO 4, Na, Ca, K, Mg, Cs, Li, LiF; 2,2 ', 2' '- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluorene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.

For an organic functional layer structure 22 With two or more organic functional layer structure units, corresponding intermediate layers may be formed between the organic functional layer structure units. The organic functional layer structure units may each be individually separated according to an embodiment of the above-explained organic functional layer structure 22 be educated. The intermediate layer may be formed as an intermediate electrode. The intermediate electrode may be electrically connected to an external voltage source. The external voltage source may provide, for example, a third electrical potential at the intermediate electrode. However, the intermediate electrode can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.

The organic functional layer structure unit may for example have a layer thickness of at most approximately 3 .mu.m, for example a layer thickness of at most approximately 1 .mu.m, for example a layer thickness of approximately approximately 300 nm.

The conventional organic light-emitting diode 1 Optionally, it may further comprise functional layers, for example, disposed on or over the one or more emitter layers or on or above the electron transport layer. The further functional layers can be, for example, internal or external input / output coupling structures that improve the functionality and thus the efficiency of the conventional organic light-emitting diode 1 can continue to improve.

The second electrode 23 may according to one of the embodiments of the first electrode 20 be formed, wherein the first electrode 20 and the second electrode 23 may be the same or different. The second electrode 23 may be formed as an anode or as a cathode. The second electrode 23 may have a second electrical connection to which a second electrical potential can be applied. The second electrical potential may be provided by the same or a different energy source as the first electrical potential. The second electrical potential may be different than the first electrical potential. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

The encapsulation layer 24 can also be referred to as thin-layer encapsulation. The encapsulation layer 24 can be designed as a translucent or transparent layer. The encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the encapsulation layer 24 such that they can not be penetrated by substances which can damage the organic light-emitting diode, for example water, oxygen or solvents, or at most to very small proportions. The encapsulation layer 24 may be formed as a single layer, a layer stack or a layer structure.

The encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66 , as well as mixtures and alloys thereof.

The encapsulation layer 24 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm, for example about 40 nm.

The encapsulation layer 24 may comprise a high refractive index material, for example one or more materials having a high refractive index, for example having a refractive index of from 1.5 to 3, for example from 1.7 to 2.5, for example from 1.8 to 2.

Optionally, the first barrier layer on the carrier 12 corresponding to a configuration of the encapsulation layer 24 be educated.

The encapsulation layer 24 can be formed for example by means of a suitable deposition method, for. Example by means of a Atomschichtabscheideverfahrens (Atomic Layer Deposition (ALD)), z. A plasma-enhanced atomic layer deposition (PEALD) process or a plasma-less atomic layer deposition process (PLALD), or by means of a chemical vapor deposition process (Chemical Vapor Deposition (CVD)), e.g. A plasma enhanced chemical vapor deposition (PECVD) or plasma-less chemical vapor deposition (PLCVD) process, or alternatively by other suitable deposition techniques.

Optionally, a coupling or decoupling layer, for example, as an external film (not shown) on the support 12 or as an internal coupling-out layer (not shown) in the layer cross-section of the conventional organic light-emitting diode 1 be educated. The input / outcoupling layer may have a matrix and scattering centers distributed therein, wherein the mean refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the electromagnetic radiation is provided. Furthermore, one or more antireflection coatings may additionally be formed.

The adhesive layer 36 may for example comprise adhesive and / or paint, by means of which the cover body 38 for example, on the encapsulation layer 24 arranged, for example glued, is. The adhesive layer 36 can be transparent or translucent. The adhesive layer 36 For example, it may comprise particles which scatter electromagnetic radiation, for example light-scattering particles. As a result, the adhesive layer 36 act as a scattering layer and lead to an improvement of the color angle distortion and the Auskoppeleffizienz.

Dielectric scattering particles may be provided as light-scattering particles, for example of a metal oxide, for example silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide ( Ga2Ox) alumina, or titania. Other particles may also be suitable, provided that they have a refractive index that is equal to the effective refractive index of the matrix of the adhesive layer 36 is different, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

The adhesive layer 36 may have a layer thickness greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the adhesive may be a lamination adhesive.

The adhesive layer 36 may have a refractive index that is less than the refractive index of the cover body 38 , The adhesive layer 36 For example, it may have a low refractive index adhesive such as an acrylate having a refractive index of about 1.3. The adhesive layer 36 however, it may also have a high refractive index adhesive, for example comprising high refractive index non-diffusing particles and having a coating thickness average refractive index approximately equal to the average refractive index of the organically functional layered structure 22 corresponds, for example, in a range of about 1.6 to 2.5, for example, from 1.7 to about 2.0.

A so-called getter layer or getter structure, ie a laterally structured getter layer (not shown) may be arranged on or above the active region. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area. For example, a getter layer may include or be formed from a zeolite derivative. The getter layer may have a layer thickness greater than 1 micron, for example, a layer thickness of several microns. In various embodiments, the getter layer may include a lamination adhesive or in the adhesive layer 36 be embedded.

The cover body 38 For example, it can be formed by a glass body, a metal foil or a sealed plastic foil covering body. The cover body 38 For example, by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the conventional organic light-emitting diode 1 on the encapsulation layer 24 or the active area. The cover body 38 For example, it may have a refractive index (for example, at a wavelength of 633 nm) of, for example, 1.3 to 3, for example, 1.4 to 2, for example, 1.5 to 1.8. The cover body 38 , the adhesive layer 36 and / or the encapsulation layer 24 can also be called a cover.

3 shows a layer structure of an embodiment of an organic light emitting diode 10 wherein the organic light emitting diode 10 For example, much of the above-explained conventional organic light-emitting diode 1 can correspond and / or wherein the layer structure, for example, can largely correspond to the layer structure explained above.

The organic light-emitting diode 10 points over the carrier 12 first beam-shaping elements 40 on. The first beam-forming elements 40 are at least partially, for example, in a lateral direction in a first low-refractive layer 42 embedded. The first low refractive layer 42 is above the vehicle 12 and over the first beam-shaping elements 40 educated. The first low refractive layer 42 For example, it is in direct contact with the first beam-shaping elements 40 ,

Optionally, the first low refractive layer 42 partly in direct physical contact with the wearer 12 be. For example, the first low refractive layer 42 in an edge region of the organic light emitting diode 10 outside the first beam-shaping elements 40 in direct contact with the carrier 12 be.

The first low refractive layer 42 has a first refractive index less than the refractive index of the organic functional layer structure 22 , For example, the first refractive index is in a range between 1 and 1.6. A refractive index of the material of the beam-shaping elements 40 can, for example, the refractive index of the organic functional layer structure 22 be adapted or at least in the same range, for example in a range between 1.7 and 1.8. Alternatively or additionally, the refractive index of the first beam-shaping elements 40 to a refractive index of the carrier 12 be adjusted or at least in a similar area.

The first beam-forming elements 40 are from an outside of the vehicle 12 , in 3 the bottom of the organic light emitting diode 10 , formed spaced. The first beam-forming elements 40 For example, they may also be referred to as a burying beam-forming structure. For example, the first beam-shaping elements 40 directly on the carrier 12 be educated. The first beam-forming elements 40 may possibly be on a barrier layer above the carrier 12 be educated. Optionally, the first beam-shaping elements 40 integral with the carrier 12 be educated. In other words, the first beam-shaping elements 40 from the carrier 12 , in particular of the material of the carrier 12 be formed. For example, the carrier 12 be structured on its inside so that the corresponding structure, the first beam-forming elements 40 having. Alternatively, the first beam-shaping elements 40 regardless of the carrier 12 be trained and then on the carrier 12 to be ordered.

The first beam-forming elements 40 For example, they may be formed as three-dimensional bodies. For example, the first beam-shaping elements 40 semi-lenticular, pyramidal, truncated pyramidal, conical, frustoconical, be designed in the manner of Fresnel lenses and / or spherical sectional shape. The first beam-forming elements 40 For example, they may be integrally formed and / or form a continuous beam-shaping layer. Optionally, the first beam-shaping elements 40 be completely or partially mirrored. The dimensions of the first beam-forming elements 40 For example, they may be less than one millimeter in two dimensions, for example, on the order of a few to a few microns. For example, the beam-shaping elements can be smaller than one millimeter in the lateral direction.

The first beam-forming elements 40 serve that in the organic functional layer structure 22 To form generated light, for example, to focus and / or to direct in a preferred direction. For example, the first beam-shaping elements 40 help make the organic light-emitting diode 10 has an inhomogeneous radiation pattern and / or beam distribution. For example, the first beam-shaping elements 40 help make the organic light-emitting diode 10 has no Lambertian radiation and / or beam distribution. For example, the organic light emitting diode 10 serve as a light spot.

The first low refractive layer 42 For example, an adhesive, such as an adhesive, for example, a laminating adhesive, and / or an embedding material.

Optionally, over the first low refractive layer 42 a first coupling-out layer 44 be educated. The first coupling-out layer 44 has a refractive index that matches the refractive index of the organic functional layer structure 22 is adjusted. For example, the refractive index of the first coupling-out layer is 44 in a range between 1.7 and 1.8.

The first coupling-out layer 44 serves that in the organic functional layer structure 22 generated and in the direction of the carrier 12 Homogenize radiated light. For example, the first coupling-out layer 44 help make that move towards the first low-refractive layer 42 leaving light has a Lambertian beam distribution. This can help improve the efficiency of the organic light-emitting diode 10 to increase. If the first coupling-out layer 44 is formed, so have the first beam-forming elements 40 no effect on the efficiency of the organic light-emitting diode 10 and the first beam-shaping elements 40 transform the homogeneous light that is the first decoupling 44 in the direction of the first beam-shaping elements 40 leaves, inhomogeneous and / or directional light.

The first coupling-out layer 44 may for example comprise a plastic, silicone, a metal oxide, for example TiO 2 or Al 2 O 3, and / or air inclusions, for example with a fixed predetermined shape. Optionally, the first coupling-out layer 44 be completely or partially mirrored.

4 shows an embodiment of an organic light emitting diode 10 , For example, the largely one of the above-explained organic light-emitting diodes 10 can correspond. The organic light-emitting diode 10 has a layered structure that may, for example, largely correspond to one of the layer structures explained above.

The organic light-emitting diode 10 Optionally has over the encapsulation layer 24 a second coupling-out layer 54 on. The second coupling-out layer 54 can, for example, an embodiment of the first coupling-out layer 44 where, if the first and the second coupling-out layer 44 . 54 are formed, the first and the second coupling-out layer 44 . 54 may be the same or different. The second coupling-out layer 54 has a refractive index that matches the refractive index of the organic functional layer structure 22 is adjusted. For example, the refractive index of the second coupling-out layer is 54 in a range between 1.7 and 1.8.

The second coupling-out layer 54 Can contribute to that in the organic functional layer structure 22 generated and towards the cover body 38 Homogenize radiated light. For example, the second coupling-out layer 54 contribute to that of the organic functional layer structure 22 generated and in the direction of the cover body 38 radiated light has a Lambertian beam distribution.

The second coupling-out layer 54 may for example comprise a plastic, silicone, a metal oxide, for example TiO 2 or Al 2 O 3, and / or air inclusions, for example with a fixed predetermined shape. Optionally, the second coupling-out layer 54 be completely or partially mirrored.

Above the encapsulation layer 24 and optionally over the second coupling-out layer 54 is a second low refractive layer 52 educated. The second low refractive layer 52 For example, according to one embodiment of the first low-refractive layer 22 be formed, wherein, if the first and the second low-refractive layer 42 . 52 are formed, the first and the second low-refractive layer 42 . 52 may be the same or different.

The second low refractive layer 52 has a second refractive index less than the refractive index of the organic functional layer structure 22 , For example, the second refractive index is in a range between 1 and 1.6. For example, the second refractive index may be equal to the first refractive index.

The second low refractive layer 52 For example, an adhesive, such as an adhesive, for example, a laminating adhesive, and / or an embedding material.

The organic light-emitting diode 10 indicates over and at least partially in the second low refractive index layer 52 second beam-forming element 50 on. The second beam-forming element 50 are from an outside, in 4 the top of the organic light emitting diode 10 , the cover body 38 formed spaced. The second beam-forming elements 50 are at least partially in the second low refractive index layer 52 embedded, for example in a lateral direction. The second low refractive layer 52 For example, it is in direct contact with the second beam-shaping elements 50 ,

Optionally, the second low refractive layer 52 partly in direct physical contact with the cover body 38 be. For example, the second low refractive layer 52 in an edge region of the organic light emitting diode 10 outside the second beam-forming elements 50 in direct contact with the cover body 38 be.

The first beam-forming elements 40 are from an outside of the vehicle 12 , in 3 the bottom of the organic light emitting diode 10 , formed spaced. The second beam-forming elements 50 For example, they may also be referred to as a burying beam-forming structure. For example, the second beam-shaping elements 50 directly under the cover body 38 be educated. The second beam-forming elements 50 may possibly be on a barrier layer under the cover body 38 be educated. Optionally, the second beam-shaping elements 50 integral with the cover body 38 be educated. In other words, the second beam-shaping elements 50 from the cover body 38 , in particular of the material of the cover body 38 be formed. For example, the cover body 38 be structured on its inside so that the corresponding structure, the second beam-forming elements 50 having. Alternatively, you can the second beam-forming elements 50 independent of the cover body 38 be formed and then on the cover body 38 to be ordered.

The second beam-forming elements 50 For example, they may be formed as three-dimensional bodies. For example, the second beam-shaping elements 50 semi-lenticular, pyramidal, truncated pyramidal, conical, frustoconical, be designed in the manner of Fresnel lenses and / or spherical sectional shape. The second beam-forming elements 50 For example, they may be integrally formed and / or form a continuous beam-shaping layer. Optionally, the second beam-shaping elements 50 be completely or partially mirrored. The dimensions of the second beam-forming elements 50 For example, they may be less than one millimeter in two dimensions, for example, on the order of a few to a few microns. For example, the second beam-shaping elements 50 be less than one millimeter in the lateral direction.

A refractive index of the material of the second beam-shaping elements 50 can, for example, the refractive index of the organic functional layer structure 22 be adapted or at least in the same range, for example in a range between 1.7 and 1.8. Alternatively or additionally, the refractive index of the second beam-forming elements 50 to a refractive index of the cover body 38 be adjusted or at least in a similar area.

The second beam-forming elements 50 serve that in the organic functional layer structure 22 To form generated light, for example, to focus and / or to direct in a preferred direction. For example, the second beam-shaping elements 50 help make the organic light-emitting diode 10 has an inhomogeneous radiation pattern and / or beam distribution. For example, the first beam-shaping elements 50 help make the organic light-emitting diode 10 has no Lambertian radiation and / or beam distribution. For example, the organic light emitting diode 10 serve as a light spot.

If the second coupling-out layer 54 is formed, so have the second beam-forming elements 50 no effect on the efficiency of the organic light-emitting diode 10 and the second beam-shaping elements 50 convert the homogeneous light, which is the second decoupling layer 54 in the direction of the second beam-shaping elements 50 leaves, inhomogeneous and / or directional light.

5 shows an embodiment of an organic light emitting diode 10 , For example, the largely one of the above-explained organic light-emitting diodes 10 can correspond. In particular shows 5 a layered structure of the light emitting diode 10 which, for example, can largely correspond to one of the layer structures explained above. The organic light-emitting diode 10 has the first beam-shaping elements 40 , the first low refractive layer 42 , the second beam-forming elements 50 and the second low refractive index layer 52 on. Optionally, the light emitting diode 10 the first coupling-out layer 44 and / or the second coupling-out layer 54 exhibit.

The beam-shaping elements 40 , the first low refractive layer 42 , if necessary, the first coupling-out layer 44 , the two beam-forming elements 50 , the second low refractive layer 52 and / or optionally the second coupling-out layer 54 For example, according to a respective embodiment of the corresponding beam-forming elements explained above 40 . 50 and / or layers 42 . 44 . 52 . 54 be educated.

5 shows a flowchart of an embodiment of a method for producing an organic light-emitting diode, for example, one of the above-explained organic light-emitting diodes 10 ,

In a step S2, a carrier is provided and / or formed, for example the carrier explained above 12 ,

In a step S4, beam-shaping elements are formed, for example the first beam-shaping elements 40 over the carrier 12 , For example, the first beam-shaping elements 40 integral with the carrier 12 educated. Alternatively, the first beam-shaping elements 40 regardless of the carrier 12 formed and on this or optionally on a barrier layer above the carrier 12 arranged.

In a step S6, a low refractive index layer is formed, for example, the first low refractive index layer 42 over the beam-shaping elements 40 , For example, the first beam-shaping elements 40 in the first low refractive layer 42 embedded. The first low refractive layer 42 For example, it can be designed so that it faces away from the first beam-shaping elements 40 a flat surface for the application of the subsequent layer and that it thus serves as a planarization layer. Alternatively or additionally, the first low-refractive-index layer 42 serve as an adhesive and / or as a primer for the subsequent layer.

In an optional step S8, a coupling-out layer can be formed, for example, the first coupling-out layer 44 over the first low refractive layer 42 be formed.

In a step S10, a first electrode is formed, for example, the first electrode 20 over the first low refractive layer 42 and / or optionally over the first coupling-out layer 44 educated.

In a step S12, an organic functional layer structure is formed. For example, the organic functional layer structure becomes 22 above the first electrode 20 educated.

In a step S14, a second electrode is formed. For example, the second electrode becomes 23 over the organic functional layer structure 22 educated.

In a step S16, a cover is formed. For example, the cover is formed by the encapsulation layer 24 over the second electrode 23 is formed and / or by the cover body 38 by means of the adhesive layer 36 over the second electrode 23 on the encapsulation layer, for example 24 is arranged.

7 shows a flowchart of an embodiment of a method for producing an organic light-emitting diode, for example, one of the above-explained organic light-emitting diodes 10 ,

In a step S20, a carrier is formed. For example, the carrier becomes 12 trained and / or provided.

In a step S22, a first electrode is formed. For example, the first electrode 20 over the carrier 12 educated.

In step S24, an organic functional layer structure is formed. For example, the organic functional layer structure becomes 22 above the first electrode 20 educated.

In a step S26, a second electrode is formed. For example, the second electrode becomes 23 over the organic functional layer structure 22 educated.

In an optional step S28, a decoupling layer can be formed. For example, the second coupling-out layer 54 over the second electrode 23 be formed.

In a step S30, a low refractive layer is formed. For example, the second low refractive index layer becomes 52 over the second electrode 23 and / or possibly over the second coupling-out layer 54 educated. The second low refractive layer 54 may serve as an adhesive and / or as a primer for the subsequent elements and / or layers.

In a step S32, beam-forming elements are formed. For example, the second beam-shaping elements 50 over and / or at least partially in the second low refractive index layer 52 educated. The second beam-forming elements 50 For example, on or inside the cover body 38 be formed. The second beam-forming elements 50 For example, integral with the cover body 38 be formed.

In a step S34, a cover is formed. The cover may, for example, the cover body 38 and / or the adhesive layer 36 exhibit. For example, the cover body 38 with or without the second beam-forming elements 50 to be ordered. Alternatively or additionally, the cover body 38 with the help of the second low refractive layer 52 above the encapsulation layer 24 and / or possibly over the second coupling-out layer 54 to be ordered. In this case, the second low-refractive layer 52 For example, serve as an adhesive and / or as a planarization layer.

Optionally, in the 6 and 7 illustrated methods are combined such that the first and the second beam-forming elements 40 . 50 , the first and the second low refractive layer 52 . 54 and / or optionally the first and the second coupling-out layer 44 . 54 in a single organic light emitting diode 10 For example, the organic light-emitting diode 10 according to 5 , are formed. Accordingly, for example, steps S2-S14 of FIG 6 illustrated method with the steps S28-S34 of in 7 be combined illustrated method.

The invention is not limited to the specified embodiments. For example, the illustrated organic light-emitting diodes 10 have less or additional layers, for example barrier layers and / or coupling-out layers. Furthermore, the corresponding methods may correspondingly have more or fewer steps for forming additional or fewer layers, in particular barrier layers and / or coupling-out layers.

Claims (15)

Organic light-emitting diode ( 10 ), with - a carrier ( 12 ), - first beam-shaping elements ( 40 ) above the support ( 12 ), - a first low refractive index layer ( 42 ) above the first beam-shaping elements ( 40 ), wherein the first beam-shaping elements ( 40 ) at least partially into the first low refractive layer ( 40 ), - a first electrode ( 20 ) above the first low refractive layer ( 40 ), - an organic functional layer structure ( 22 ) above the first electrode ( 20 ), wherein a refractive index of the organic functional layer structure ( 22 ) is greater than the refractive index of the first low refractive index layer ( 42 ), - a second electrode ( 23 ) above the organic functional layer structure ( 22 ), - a cover body ( 38 ) located above the second electrode ( 23 ) is trained. Organic light-emitting diode ( 10 ), with - a carrier ( 12 ), - a first electrode ( 20 ) above the support ( 12 ), - an organic functional layer structure ( 22 ) above the first electrode ( 20 ), - a second electrode ( 23 ) above the organic functional layer structure ( 22 ) is formed - a second low refractive index layer ( 52 ) located above the second electrode ( 23 ) and whose refractive index is smaller than the refractive index of the organic functional layer structure ( 22 ), Second beam-shaping elements ( 50 ) above the second low refractive index layer ( 52 ) are formed and partially in the second low-refractive layer ( 52 ), - a cover body ( 38 ) projecting above the second beam-shaping elements ( 50 ) is trained. Organic light-emitting diode ( 10 ) according to one of the preceding claims, in which the beam-shaping elements ( 40 . 50 ) directly to the carrier ( 12 ) and / or directly to the cover body ( 38 ). Organic light-emitting diode ( 10 ) according to one of claims 1 or 2, in which the beam-shaping elements ( 40 . 50 ) of the carrier ( 12 ) and / or from the cover body ( 38 ) are formed. Organic light-emitting diode ( 10 ) according to claim 4, wherein the beam-shaping elements ( 40 . 50 ) an inside of the carrier and / or an inside of the cover body s ( 38 ) form. Organic light-emitting diode ( 10 ) according to any one of the preceding claims, wherein between the first low refractive index layer ( 42 ) and the first electrode ( 20 ) a first decoupling layer ( 44 ) is formed and / or in between the second low-refractive layer ( 52 ) and the second electrode ( 23 ) a second coupling-out layer ( 54 ) is trained. Organic light-emitting diode ( 10 ) according to claim 6, in which the first coupling-out layer ( 44 ) and / or second decoupling layer ( 54 ) has a refractive index which corresponds to the refractive index of the organic functional layer structure ( 22 ) is adjusted. Organic light-emitting diode ( 10 ) according to one of claims 6 or 7, in which the first coupling-out layer ( 44 ) and / or the second coupling-out layer ( 54 ) has light-scattering elements. Organic light-emitting diode ( 10 ) according to any one of the preceding claims, wherein the first low refractive index layer ( 42 ) and / or the second low refractive index layer ( 52 ) has a refractive index in a range between 1 and 1.6. Organic light-emitting diode ( 10 ) according to one of the preceding claims, in which the beam-shaping elements ( 40 . 50 ) are half-lenticular, pyramidal, truncated pyramid-shaped, conical, frusto-conical, designed in the manner of Fresnel lenses and / or spherical sectional shape. Organic light-emitting diode ( 10 ) according to any one of the preceding claims, wherein of the beam-shaping elements ( 40 . 50 ) is formed a jet-forming layer. Organic light-emitting diode ( 10 ) according to one of the preceding claims, in which the external dimensions of the beam-shaping elements ( 40 . 50 ) are smaller than 1 mm in at least two dimensions. Organic light-emitting diode ( 10 ) according to one of the preceding claims, in which a surface of the beam-shaping elements ( 40 . 50 ) is completely or partially mirrored. Method for producing an organic light-emitting diode ( 10 ), in which - a carrier ( 12 ) and first beam-shaping elements ( 40 ) from an outside of the carrier ( 12 ) are formed spaced apart, A first low refractive layer ( 42 ), over the first beam-shaping elements ( 40 ), wherein the first beam-shaping elements ( 40 ) at least partially into the first low refractive layer ( 42 ), - a first electrode ( 20 ) over the first low refractive layer ( 42 ), - an organic functional layer structure ( 22 ) over the first electrode ( 20 ), wherein a refractive index of the organic functional layer structure ( 22 ) is greater than a first refractive index of the first low refractive index layer ( 42 ), - a second electrode ( 23 ) over the organic functional layer structure ( 22 ), - a cover body ( 38 ) over the second electrode ( 23 ) is formed. Method for producing an organic light-emitting diode ( 10 ), in which - a carrier ( 12 ), - a first electrode ( 20 ) above the carrier ( 12 ), - an organic functional layer structure ( 22 ) over the first electrode ( 20 ), - a second electrode ( 23 ) over the organic functional layer structure ( 22 ), - a second low refractive index layer ( 52 ) whose second refractive index is smaller than the refractive index of the organic functional layer structure ( 22 ), over the second electrode ( 23 ), and - second beam-shaping element ( 50 ) and a cover body ( 38 ), wherein the second beam-shaping elements ( 50 ) from an outside of the cover body ( 38 ) spaced between the outside of the cover body ( 38 ) and the second electrode ( 23 ) and wherein the second beam-shaping element ( 50 ) at least partially into the second low refractive index layer ( 52 ) are embedded.

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