WO2015053124A1 - Substrat à électrode transparente, procédé d'évaluation de substrat à électrode transparente, procédé de fabrication de substrat à électrode transparente, panneau tactile et procédé de fabrication de panneau tactile - Google Patents

Substrat à électrode transparente, procédé d'évaluation de substrat à électrode transparente, procédé de fabrication de substrat à électrode transparente, panneau tactile et procédé de fabrication de panneau tactile Download PDF

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WO2015053124A1
WO2015053124A1 PCT/JP2014/075962 JP2014075962W WO2015053124A1 WO 2015053124 A1 WO2015053124 A1 WO 2015053124A1 JP 2014075962 W JP2014075962 W JP 2014075962W WO 2015053124 A1 WO2015053124 A1 WO 2015053124A1
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substrate
transparent electrode
transparent
wavelength
spectral reflectance
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PCT/JP2014/075962
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English (en)
Japanese (ja)
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弘毅 早川
崇 口山
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株式会社カネカ
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Priority to JP2015541530A priority Critical patent/JP6389466B2/ja
Publication of WO2015053124A1 publication Critical patent/WO2015053124A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a substrate with a transparent electrode, a method for evaluating a substrate with a transparent electrode, a method for manufacturing a substrate with a transparent electrode, a touch panel, and a method for manufacturing a touch panel.
  • a substrate with a transparent electrode for a touch panel is formed by forming a transparent electrode on a transparent insulating substrate, and is used as a position sensor for the touch panel.
  • the capacitance method requires an electrode pattern for capacitance detection in order to detect a position by detecting a change in capacitance.
  • the electrode pattern is generally formed by etching, and is composed of an etched portion (transparent electrode non-formed portion) from which the electrode has been removed by etching and a non-etched portion (transparent electrode forming portion) where the electrode remains without being etched.
  • a substrate with a transparent electrode on which a transparent electrode is patterned requires non-visibility of a so-called transparent electrode pattern (hereinafter, also simply referred to as a pattern) in which a patterned trace is not visible.
  • the main reason why the transparent electrode pattern is visually recognized is that an optical difference such as reflectance and color value occurs between the etched portion and the non-etched portion. Therefore, many substrates with transparent electrodes for touch panels have improved invisibility by designing a laminated structure such as adjusting the film thickness and refractive index of the transparent dielectric layer.
  • JP 2010-182528 A International Publication No. 2010/114056 JP 2013-84376 A JP 2010-76232 A
  • Patent Document 1 describes a technique using a color difference ⁇ E calculated according to JIS Z8701 from a reflection spectrum as an invisibility index.
  • Patent Document 2 describes a technique using an integrated value of a difference between reflectance spectra of an etched portion and a non-etched portion as an index of invisibility.
  • Patent Document 3 describes a technique using an absolute value of a difference between average values of reflection spectra.
  • Patent Document 4 describes a technique using a value obtained by multiplying and integrating the absolute value of the difference in reflection spectrum and the standard specific luminous efficiency.
  • the present invention relates to a method for evaluating a substrate with a transparent electrode.
  • the spectral reflectance R A ( ⁇ ) of the substrate with a transparent electrode (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on the transparent substrate, and the substrate with the transparent electrode (
  • the spectral reflectance R B ( ⁇ ) of the substrate (B) without the transparent conductive film layer of A) is measured, and the spectral reflectance R A ( ⁇ ) and the spectral reflectance R B ( ⁇ )
  • the absolute value ⁇ R ( ⁇ ) of the difference spectrum at each wavelength is calculated.
  • Equation 1 ⁇ R ( ⁇ ) and C 1 ( ⁇ ) that is the sum of the color matching functions x ( ⁇ ), y ( ⁇ ), and z ( ⁇ ) are calculated.
  • the value of ⁇ V 1 obtained by multiplying at each wavelength and integrating in the wavelength range of 380 to 780 nm, or ⁇ R ( ⁇ ) and C 1 ( ⁇ ) as shown in Equation 2 below.
  • the light source spectrum L ( ⁇ ) multiplied at each wavelength and integrated in the wavelength range of 380 to 780 nm, and the value of ⁇ S 1 is obtained on the transparent electrode-formed substrate with the transparent electrode patterned thereon. And a transparent electrode non-formation part, it is used for the difference in the visibility of reflected light, that is, the non-visibility index of the transparent electrode pattern.
  • the present invention relates to a method for manufacturing a substrate with a transparent electrode in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on a transparent substrate.
  • the above-described substrate with a transparent electrode is evaluated, and whether any one of the above ⁇ V 1 , ⁇ S 1 , ⁇ V 2, and ⁇ S 2 is within a predetermined range. It is characterized by determining.
  • One embodiment of the present invention relates to a substrate with a transparent electrode manufactured by the above manufacturing method.
  • the present invention provides a substrate with a transparent electrode (A) in which a transparent dielectric layer and a transparent conductive film layer are laminated in this order on a transparent substrate, and a substrate in which the transparent conductive film layer of the substrate with a transparent electrode (A) does not exist.
  • A transparent dielectric layer
  • A transparent conductive film layer
  • B the transparent conductive film layer of the substrate with a transparent electrode
  • the value of ⁇ V 1 shown in the above formula 1 is 240% nm or less
  • the value of ⁇ S 1 shown in the above formula 2 is 7.0% nm or less.
  • the present invention relates to a touch panel comprising the above substrate with a transparent electrode.
  • This invention relates to the manufacturing method of the touchscreen characterized by performing the evaluation method of the said board
  • the present invention it becomes possible to quantitatively and accurately determine the non-visibility of the transparent electrode pattern on the substrate with a transparent electrode and the touch panel on which the transparent electrode is patterned.
  • the problem of the prior art of difference in sex determination does not occur.
  • the evaluation method according to the present invention as an index in the production of a substrate with a transparent electrode, it is possible to provide a substrate with a transparent electrode in which the non-visibility of the transparent electrode pattern is good.
  • a substrate with a transparent electrode used in the method for evaluating a substrate with a transparent electrode of the present invention (hereinafter also simply referred to as “the evaluation method of the present invention”) will be described.
  • FIG. 1 is a cross-sectional view of a substrate (A) with a transparent electrode in which a transparent dielectric layer 2 is formed on a transparent substrate 1 and a transparent conductive film layer 3 is formed thereon.
  • FIG. 2 is a cross-sectional view of the substrate (B) from which the transparent conductive film layer 3 has been removed from the substrate with transparent electrodes (A). Note that the dimensional relationship of the thicknesses in FIGS. 1 and 2 is changed as appropriate for the sake of clarity and simplification of the drawings, and does not represent the actual dimensional relationship. Moreover, in each figure, the same referential mark means the same technical matter.
  • the base material of the transparent substrate is not particularly limited as long as it is colorless and transparent at least in the visible light region, and any substrate can be used as long as a transparent electrode can be formed thereon.
  • examples thereof include polyester resins such as glass, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate (PEN), cycloolefin resins, polycarbonate resins, polyimide resins, and cellulose resins.
  • polyester resins and cycloolefin resins are preferably used, and polyethylene terephthalate is particularly preferably used.
  • the thickness of the substrate is not particularly limited, but a thickness of 0.01 to 0.4 mm is preferable. If it is in the said range, since durability of a transparent substrate can fully be improved and it has moderate softness
  • the material for the transparent dielectric layer examples include acrylic resins, silicone resins, materials mainly composed of oxides such as silicon oxide, titanium oxide, niobium oxide, zirconium oxide, aluminum oxide, and calcium fluoride / magnesium fluoride.
  • a material having a main component can be used.
  • the oxide constituting the transparent dielectric layer an oxide that is colorless and transparent at least in the visible light region and has a resistivity of 10 ⁇ ⁇ cm or more is preferable.
  • the thickness of the transparent dielectric layer may be any thickness as long as the resistivity is satisfied.
  • the transparent dielectric layer may be composed of only one layer or may be composed of two or more layers.
  • a hard coat layer which is also a transparent dielectric layer, may be previously laminated on one side or both sides of the transparent substrate for the purpose of enhancing the durability of the transparent electrode for touch panel.
  • a material for the hard coat layer an acrylic resin, a silicone resin, or the like can be used.
  • the film thickness of the hard coat is preferably 1 to 10 ⁇ m because it has moderate durability and flexibility.
  • the transparent substrate can be subjected to a surface treatment for the purpose of improving the adhesion between the transparent substrate and the transparent conductive film layer.
  • a surface treatment for example, there is a method of increasing the adhesion force by imparting electrical polarity to the surface of the substrate, and specific examples include corona discharge, plasma method and the like.
  • the material of the transparent conductive film layer is not particularly limited as long as it has both transparency and conductivity.
  • examples of such a material include materials mainly composed of indium oxide, zinc oxide, and tin oxide. Among these, from the viewpoint of low resistance, a material mainly composed of indium oxide is preferably used.
  • each layer may contain components other than the main component.
  • the method for forming the transparent conductive film layer is not particularly limited, and an appropriate method can be selected according to desired characteristics, such as a dry process such as sputtering or ion plating, or a wet process such as sol-gel coating.
  • a part of the surface of the transparent conductive film layer is patterned by etching or the like.
  • the pattern (transparent electrode pattern) of the transparent conductive film layer is, for example, a method of removing a part of the transparent conductive film layer of the substrate with a transparent electrode by etching, or a part of the transparent conductive film layer when forming the transparent conductive film layer. It is formed by a technique that does not form a film.
  • a method for removing the transparent conductive film layer by etching a method is known in which after applying a photosensitive resist, a resist pattern is formed by photolithography or the like, and the exposed transparent conductive film layer is removed with an etching solution. Even other methods may be used arbitrarily as long as the transparent conductive film layer is removed to form a predetermined pattern.
  • a method of not forming the transparent conductive film layer partially, a method of forming a transparent conductive film layer after forming a mask pattern on the substrate and removing the mask portion, or the like can be given.
  • the evaluation method of the substrate with a transparent electrode of the present invention will be described.
  • the spectral reflectance R B ( ⁇ ) of the substrate (B) of the substrate (A) with the transparent electrode without the transparent conductive film layer is measured, and the spectral reflectance R A ( ⁇ ) and the spectral reflectance are measured.
  • the absolute value ⁇ R ( ⁇ ) of the spectrum of the difference at each wavelength with R B ( ⁇ ) is calculated.
  • the substrate with a transparent electrode (A) As the substrate with a transparent electrode (A), after forming a transparent conductive film layer on the dielectric layer, the substrate before pattern formation or the non-etched portion of the substrate with transparent electrode after pattern formation can be used.
  • the pattern may be too fine to perform reflectance measurement. In such a case, as a sampling sample for reflectance measurement, the pattern shape is changed so that measurement is possible, or the substrate with the transparent electrode (A) in which the transparent electrode is present on the entire surface without performing patterning or etching is used.
  • An evaluation substrate may be formed.
  • the transparent conductive film layer may be crystallized by annealing after forming the transparent conductive film layer. Since the refractive index of the material (such as ITO) constituting the transparent conductive film layer changes before and after crystallization, the invisibility of the transparent electrode pattern also changes before and after crystallization. Therefore, optical design is usually performed based on the optical characteristics of the transparent conductive film layer after crystallization. Moreover, in the transparent conductive film layer before crystallization, since ITO etc. itself absorbs light easily, a transparent electrode pattern becomes easy to visually recognize. For the above reason, when crystallization of a transparent conductive film layer is performed, highly accurate evaluation becomes possible by using what crystallized a transparent conductive film layer as a substrate (A) with a transparent electrode.
  • substrate (B) is a thing of the state in which the transparent conductive film layer of the said board
  • substrate of the stage before forming a transparent conductive film layer can be used as a board
  • the etched portion of the substrate with a transparent electrode after pattern formation can also be used as the substrate (B).
  • the substrate (B) for measuring the reflectivity is used as the substrate (B) that has been subjected to the etching process, so that the actual accuracy can be obtained. High evaluation is possible.
  • an etching method an appropriate method can be selected according to the touch panel manufacturing process, such as a wet process using an acid or a dry process using plasma.
  • the pattern When evaluating as a touch panel, as in the case of the substrate with a transparent electrode (A), the pattern may be too fine to measure the reflectance. In such a case, as an extraction sample for reflectance measurement, the pattern shape may be changed so that measurement is possible, or the evaluation substrate may be formed using the substrate (B) from which the entire transparent electrode has been removed. .
  • the reflection spectrum can be measured by a method according to the standard of JIS Z8722.
  • a method for measuring the reflection spectrum an in-line spectral reflectometer is used for in-line measurement during the film forming process, an off-line spectrophotometer is used for measurement after film formation, and a simple touch panel is used for inspection. And a method of measuring a completed touch panel product.
  • the spectral reflectance R A ( ⁇ ) and the spectral reflectance R B ( ⁇ ) are preferably measured in the same process, such as “measure with an off-line spectrophotometer after film formation”.
  • the reflection spectrum As a measuring method, it is preferable to measure using a spectral reflectometer or a spectrophotometer during the film forming process or after the film formation is completed, and it is particularly preferable to measure after the film formation is completed.
  • Equation 1 the sum of ⁇ R ( ⁇ ) and color matching functions x ( ⁇ ), y ( ⁇ ), and z ( ⁇ ) is calculated. Is multiplied by C 1 ( ⁇ ) at each wavelength and integrated in a wavelength range of 380 to 780 nm to obtain a value of ⁇ V 1 .
  • Equation 2 the ⁇ R ( ⁇ ), the C 1 ( ⁇ ), and the light source spectrum L ( ⁇ ) are multiplied at each wavelength and integrated in a wavelength range of 380 to 780 nm. To obtain the value of ⁇ S 1 .
  • the light source spectrum L ( ⁇ ) is a light source spectrum in the environment where the final product is used, and the spectrum of the light source used for measuring the spectral reflectance R A ( ⁇ ) and the spectral reflectance R B ( ⁇ ). Is not necessarily the same as L ( ⁇ ).
  • ⁇ R ( ⁇ ) and C 2 ( ⁇ ) are multiplied at each wavelength to obtain a lower limit wavelength ⁇ 1 (nm) to visible light region.
  • the value of ⁇ V 2 is obtained by integration in the wavelength range of the upper limit wavelength ⁇ 2 (nm).
  • ⁇ R ( ⁇ ), C 2 ( ⁇ ), and light source spectrum L ( ⁇ ) are multiplied at each wavelength to obtain ⁇ 1 (nm) to ⁇ 2 (nm determine the value of [Delta] S 2 integrating in the wavelength range of).
  • CIE International Commission on Illumination
  • the color matching functions are defined as three functions x ( ⁇ ), y ( ⁇ ), and z ( ⁇ ), reflecting that humans have three-dimensional color coordinates.
  • C 1 ( ⁇ ) is a function obtained by adding x ( ⁇ ), y ( ⁇ ), and z ( ⁇ ), and expresses what wavelength light can be perceived by humans.
  • C 1 ( ⁇ ) is a function with an emphasis on color. Therefore, by using C 1 ( ⁇ ), the color difference can be reflected more accurately, and as a result, the non-visibility evaluation accuracy can be improved.
  • CIE (1964) 10-deg color matching functions which are values of a 10 degree field of view, as the values of x ( ⁇ ), y ( ⁇ ), and z ( ⁇ ).
  • FIG. 3 shows C 1 ( ⁇ ) obtained from the color matching function of the 10 ° field of view. Note that as the values of x ( ⁇ ), y ( ⁇ ), and z ( ⁇ ), the value of the double field of view can be used reflecting the use environment of the final product.
  • C 2 ( ⁇ ) is used, even when C 2 ( ⁇ ) is used, the non-visibility evaluation accuracy can be improved.
  • the light source spectrum used for the calculation of ⁇ S 1 or ⁇ S 2 can be set according to the usage environment of the final product and the like. For example, various light sources, such as sunlight, D65 light source, and a fluorescent lamp, are mentioned. When it is assumed that the final product is used outdoors, a method using a spectrum obtained by referring to an actual measurement value of a sunlight spectrum or a literature value of a D65 light source is preferable. In addition, when it is assumed that the final product is used indoors, a method of using an illumination spectrum as a light source spectrum is preferable, and a daylight color fluorescent light source or a D65 light source spectrum is preferable.
  • FIG. 4 shows a spectrum of a daylight fluorescent light source
  • FIG. 5 shows a spectrum of a D65 light source.
  • ⁇ V 1 [Calculation of ⁇ V 1 and ⁇ S 1 ]
  • ⁇ V 1 can be obtained by multiplying ⁇ R ( ⁇ ) and C 1 ( ⁇ ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 1 above.
  • ⁇ S 1 is obtained by multiplying ⁇ R ( ⁇ ), C 1 ( ⁇ ), and L ( ⁇ ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 2 above.
  • ⁇ V 1 and ⁇ S 1 may be calculated by piecewise quadrature using values at constant wavelength intervals (for example, every 10 nm) as in the examples described later. The same applies to the calculation of ⁇ V 2 and ⁇ S 2 .
  • ⁇ V 2 is obtained by multiplying ⁇ R ( ⁇ ) and C 2 ( ⁇ ) at each wavelength, as expressed in Equation 3 above, from the lower limit wavelength ⁇ 1 (nm) to the upper limit wavelength ⁇ 2 (nm) in the visible light region. ) Is obtained by integration in the wavelength range.
  • ⁇ S 2 is obtained by multiplying ⁇ R ( ⁇ ), C 2 ( ⁇ ), and L ( ⁇ ) at each wavelength, as expressed in Equation 4 above, to obtain a wavelength of ⁇ 1 (nm) to ⁇ 2 (nm). Obtained by integrating over a range.
  • the light source spectrum L ( ⁇ ) used for the calculation of ⁇ S 1 or ⁇ S 2 can be arbitrarily set, but the calculation result changes if light sources having different intensities are used. Therefore, it is necessary to standardize the intensity of the light source spectrum.
  • C 1 ( ⁇ ) and L ( ⁇ ) are multiplied by each wavelength and integrated in a wavelength range of 380 to 780 nm, and C 2 ( ⁇ ) and L ( ⁇ ) are Normalization is performed so that the result becomes 10 when integrated in the wavelength range of ⁇ 1 (nm) to ⁇ 2 (nm).
  • the normalization of the light source intensity may be performed by integrating only the light source spectrum, but in the present invention, it is necessary to normalize in consideration of human sensitivity, which is 380 to 780 nm (or ⁇ ). 1 (nm) to ⁇ 2 (nm)), the above integrated value was adopted. This is the same reason that the k value described in JIS Z8701 is normalized by the integral value of light source spectrum ⁇ color matching function.
  • the values of ⁇ V 1 , ⁇ S 1 , ⁇ V 2, and ⁇ S 2 obtained as described above can be used as indicators of the invisibility of the transparent electrode pattern, respectively.
  • ⁇ V 1 , ⁇ S 1 , ⁇ V 2 and ⁇ S 2 are preferably low.
  • the value of ⁇ V 1 is preferably 240% nm or less, more preferably 220% nm or less, and further preferably 200% nm or less.
  • the value of ⁇ S 1 is preferably 7.0% nm or less, more preferably 6.3% nm or less, and even more preferably 5.6% nm or less.
  • the value of ⁇ V 2 is preferably 280% nm or less, more preferably 260% nm or less, and further preferably 190% nm or less.
  • the value of ⁇ S 2 is preferably 9.0% nm or less, more preferably 7.5% nm or less, and even more preferably 5.7% nm or less.
  • the method for evaluating a substrate with a transparent electrode according to the present invention can be incorporated into the manufacturing process of the substrate with a transparent electrode.
  • the above evaluation is performed at the time of setting the manufacturing conditions of the substrate with a transparent electrode, for example, and various manufacturing conditions are determined by adjusting the manufacturing conditions (film forming conditions of the transparent dielectric layer and the transparent conductive film layer) based on the evaluation results. be able to.
  • substrate with a transparent electrode can also be performed by implementing the said evaluation in a production line.
  • a method for producing a substrate with a transparent electrode including the evaluation method of the present invention is also one aspect of the present invention.
  • the manufacturing method of the substrate with a transparent electrode of the present invention is the same as the manufacturing method of the conventional substrate with a transparent electrode except that the above-described evaluation method is incorporated.
  • the method for manufacturing a substrate with a transparent electrode it is determined whether any one of the above ⁇ V 1 , ⁇ S 1 , ⁇ V 2 and ⁇ S 2 is within a predetermined range. For example, if the evaluation method of the present invention is performed on the substrate with a transparent electrode after the transparent conductive film layer is formed, and the value of ⁇ V 1 or the like exceeds a predetermined value, the non-visibility of the transparent electrode pattern Is not within the acceptable range.
  • the determination result of the value of ⁇ V 1 or ⁇ V 2 is fed back, and the manufacturing conditions are adjusted so that the value falls within a predetermined range, whereby the non-visibility of the pattern on the substrate with the transparent electrode after patterning the transparent electrode Can be improved. If the determination result of the value of ⁇ S 1 or ⁇ S 2 is fed back to the manufacturing conditions, the invisibility in the usage environment of the final product can be improved. That is, as the light source spectrum L ( ⁇ ) used when calculating ⁇ S 1 or ⁇ S 2 , by using the light source spectrum in the use environment of the final product or the light source spectrum close to the use environment, the pattern in the use environment of the final product is determined. It becomes possible to evaluate non-visibility more accurately.
  • ⁇ S 1 or ⁇ S 2 is preferably obtained.
  • Examples of the production conditions to be adjusted include film formation conditions (material, thickness, gas flow rate, etc.) of the transparent dielectric layer, film formation conditions (material, thickness, gas flow rate, etc.) of the transparent conductive layer, and the like. Two or more manufacturing conditions may be adjusted simultaneously. For example, when the values of ⁇ V 1 , ⁇ S 1, etc. are higher than the target values, reducing the thickness of at least one of the transparent dielectric layer and the transparent conductive film layer, or at least one of the transparent dielectric layer and the transparent conductive film layer These values can be lowered by increasing the amount of oxygen during film formation.
  • quality control of a substrate with a transparent electrode can be performed by adding the determination result to the substrate with a transparent electrode.
  • the yield of the final product can be increased by selectively using a substrate with a transparent electrode whose values of ⁇ V 1 , ⁇ S 1 and the like are equal to or less than target values.
  • a method of adding a determination result to a substrate with a transparent electrode a method of printing a label printed with the determination result or a medium such as an IC chip on which the determination result is recorded is attached to a substrate with a transparent electrode or packed together with a substrate with a transparent electrode, the determination result And a method of printing or printing directly on a substrate with a transparent electrode.
  • the determination result can be expressed by letters, numbers, symbols, barcodes, two-dimensional codes, etc., or may be expressed in combination.
  • the above-mentioned method is mentioned as a measuring method of a reflection spectrum.
  • the method of measuring the reflection spectrum in-line during the film forming process is preferable, and the spectral reflectance R B ( ⁇ ) is preferably measured after the transparent dielectric layer is formed and before the transparent conductive film layer is formed. More preferably, the spectral reflectance of the substrate and the spectral reflectance of the substrate with a transparent electrode after the transparent conductive film layer is formed are measured in-line as the spectral reflectance R A ( ⁇ ).
  • ⁇ V 1 is preferably 240% nm or less, more preferably 220% nm or less, and even more preferably 200% nm or less
  • ⁇ S 1 is preferably 7.0% nm or less, more preferably 6.3. % V or less, more preferably 5.6% nm or less
  • ⁇ V 2 is preferably 280% nm or less, more preferably 260% nm or less, more preferably 190% nm or less
  • ⁇ S 2 is
  • the transparent electrode pattern should be a substrate with a transparent electrode having high non-visibility, respectively. Can do. By managing the manufacturing conditions so as to be in such a numerical range, it is possible to manufacture a substrate with a transparent electrode with good non-visibility.
  • the determination result can be fed back to the film forming process of the transparent conductive film layer without being affected by the difference in determination of the visibility of the transparent electrode pattern due to the evaluator's skill level, etc. Can be detected at an early stage, and can contribute to productivity improvement.
  • substrate with a transparent electrode of this invention can be used as transparent electrodes, such as a display, a light emitting element, a photoelectric conversion element, and is used suitably as a transparent electrode for touchscreens.
  • a transparent conductive film layer is low resistance, it is preferably used for a capacitive touch panel.
  • a conductive ink or paste is applied on a substrate with a transparent electrode, and heat treatment is performed, whereby a collecting electrode as a wiring for a routing circuit is formed.
  • the method for the heat treatment is not particularly limited, and examples thereof include a heating method using an oven or an IR heater.
  • the temperature and time of the heat treatment are appropriately set in consideration of the temperature and time at which the conductive paste adheres to the transparent electrode. For example, examples include heating at 120 to 150 ° C. for 30 to 60 minutes for heating by an oven and heating at 150 ° C. for 5 minutes for heating by an IR heater.
  • the formation method of the circuit wiring is not limited to the above, and may be formed by a dry coating method.
  • the wiring for the routing circuit is formed by photolithography, the wiring can be thinned.
  • substrate 1 As a substrate (A) 1 with a transparent electrode, a transparent dielectric layer (high refractive index layer, low refractive index layer) and a transparent conductive film layer were sequentially laminated on a base material (transparent substrate). Nb 2 O 5 was used as the high refractive index layer, SiO 2 was used as the low refractive index layer, and ITO in which tin oxide was doped into indium oxide was used as the transparent conductive film layer.
  • a film having a hard coat layer (urethane resin) formed on both sides of a PET film (thickness 125 ⁇ m) was used as a substrate, and Nb 2 O 5 , SiO 2 , and ITO were sequentially formed thereon by sputtering.
  • the thickness of the hard coat layer was 5 ⁇ m
  • the thickness of Nb 2 O 5 was 8 nm
  • the thickness of SiO 2 was 50 nm
  • the thickness of ITO was 28 nm.
  • substrate (A) 1 Since ITO immediately after sputtering is amorphous, the ITO was crystallized by annealing in an oven at 150 ° C. for 30 minutes. The substrate with a transparent electrode thus obtained was designated as substrate (A) 1 .
  • Substrate (B) 1 was produced by wet etching the transparent conductive film layer of substrate (A) 1 with a transparent electrode using an etching solution (ITO-02 manufactured by Kanto Chemical).
  • the substrate (A) 1 with a transparent electrode was patterned by photolithography to prepare a patterning sample 1.
  • the non-visibility of the transparent electrode pattern was evaluated in five levels from level 1 to level 5 under a daylight fluorescent lamp. It shows that non-visibility is so favorable that a number is large.
  • the visual invisibility level of the patterning sample 1 was 1.
  • a substrate (A) 2 with a transparent electrode was prepared in the same manner as in Example 1 except that the thickness of SiO 2 was 40 nm and the thickness of ITO was 25 nm.
  • B) 2 and patterning sample 2 were prepared. The visual invisibility level of the patterning sample 2 was 2.
  • Substrate 3 Except that the thickness of Nb 2 O 5 was 7 nm and the thickness of ITO was 26 nm, a substrate with a transparent electrode (A) 3 was prepared in the same manner as in Example 1, and the transparent conductive film layer was wet etched. Substrate (B) 3 and patterning sample 3 were produced. The visual invisibility level of the patterning sample 3 was 3.
  • a substrate (A) 4 with a transparent electrode was produced in the same manner as in Example 1 except that the thickness of ITO was set to 26 nm, and the transparent conductive film layer was wet-etched to obtain the substrate (B) 4 and the patterning sample 4 Was made.
  • the visual invisibility level of the patterning sample 4 was 4.
  • a substrate (A) 5 with a transparent electrode was prepared in the same manner as in Example 1 except that the thickness of Nb 2 O 5 was 6 nm, the thickness of SiO 2 was 34 nm, and the thickness of ITO was 10 nm.
  • the substrate (B) 5 and the patterning sample 5 were produced by wet etching. The visual invisibility level of the patterning sample 5 was 5.
  • a transparent electrode substrate (A) 6 was prepared in the same manner as in Example 1 except that the thickness of Nb 2 O 5 was 6 nm, the thickness of SiO 2 was 30 nm, and the thickness of ITO was 10 nm.
  • the substrate (B) 6 and the patterning sample 6 were produced by wet etching. The visual invisibility level of the patterning sample 5 was 5.
  • Example 1 The reflection spectra of the substrates with transparent electrodes (A) 1 to (A) 5 and substrates (B) 1 to (B) 5 prepared above were measured, and ⁇ V 1 was calculated based on Equation 1.
  • the reflection spectrum was measured over a wavelength range of 380 nm to 780 nm every wavelength interval of 10 nm using a LAMBDA750 manufactured by PerkinElmer, Inc., which is a spectrophotometer equipped with an integrating sphere. The measurement was performed in a room temperature environment with an air temperature of 25 ° C. and a humidity of 40%. In the measurement of the reflection spectrum, a sample was placed so that the monochromatic light that was split was incident on the film-forming surface, and all transmitted light was measured with an integrating sphere. At the time of measuring the reflection spectrum, the reflectance including the back surface reflection was measured without performing any special treatment such as black coating on the back surface. The sample was fixed by pressing the outside of the portion in contact with the integrating sphere opening, and the measurement was performed with the back surface in contact with air.
  • Equation 1 [Calculation of ⁇ V 1 ] ⁇ V 1 was obtained by multiplying ⁇ R ( ⁇ ) and C 1 ( ⁇ ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 1.
  • ⁇ R ( ⁇ ) is the absolute value of the difference between the reflection spectra of the substrate with transparent electrode (A) and the substrate (B) obtained by the reflection spectrum measurement.
  • the color matching function was adjusted to the measurement wavelength of the reflection spectrum, and a wavelength range of 380 nm to 780 nm was used for each wavelength interval of 10 nm. The same applies to the calculation of ⁇ S 1 , ⁇ V 1 and ⁇ S 2 .
  • Example 2 In Example 1, the invisibility was evaluated using ⁇ S 1 instead of the evaluation function ⁇ V 1 .
  • ⁇ S 1 the same daylight color fluorescent lamp light source spectrum as the light source used for visual evaluation was used.
  • Equation 2 [Calculation of ⁇ S 1 ] ⁇ S 1 is obtained by multiplying ⁇ R ( ⁇ ), C 1 ( ⁇ ), and the light source spectrum L ( ⁇ ) at each wavelength and integrating in the wavelength range of 380 to 780 nm, as expressed in Equation 2. It was. In this example, normalization was performed so that the result was 10 when C 1 ( ⁇ ) and L ( ⁇ ) were multiplied by each wavelength and integrated in a wavelength range of 380 to 780 nm.
  • Example 2 [Reference Example 1] In Example 2, ⁇ S 1 was calculated using the D65 light source spectrum as the light source spectrum L ( ⁇ ) instead of the daylight fluorescent lamp light source spectrum.
  • FIG. 8 The result obtained by this calculation is shown in FIG. In FIG. 8, for reference, it is compared with the invisibility level evaluated under a daylight color fluorescent lamp. It was confirmed that ⁇ S 1 can be calculated even when the light source is changed.
  • Example 1 From the reflection spectrum obtained in Example 1, using CIE (1964) 10-deg color matching functions as the color matching function and the D65 light source spectrum as the light source spectrum, the L * a * b * color system described in JIS Z8701 The color difference ⁇ E was calculated. The obtained results are shown in FIG. The correlation between ⁇ E and visual invisibility evaluation results is poor, and ⁇ E cannot represent invisibility with sufficient accuracy.
  • Table 1 shows the results of the patterning sample 6 (substrate (A) 6 with transparent electrode and substrate (B) 6 ).
  • ⁇ V 1 and ⁇ S 1 Examples 1 and 2 completely correspond to the order of visual evaluation
  • the conventional index Comparative Examples 1 to 4 has a visual evaluation. The order is reversed. Thus, the non-visibility cannot be quantified with sufficient accuracy by the conventional index.
  • Example 3 In Example 1, the invisibility was evaluated using ⁇ V 2 instead of the evaluation function ⁇ V 1 . In Examples 3 to 24, the reflection spectra of the substrates with transparent electrodes (A) 1 to (A) 4 and the substrates (B) 1 to (B) 4 were measured.
  • Equation 3 [Calculation of ⁇ V 2 ] ⁇ V 2 was obtained by multiplying ⁇ R ( ⁇ ) and C 2 ( ⁇ ) at each wavelength and integrating in a wavelength range of 380 to 780 nm, as expressed in Equation 3.
  • Example 25 the invisibility was evaluated using ⁇ S 2 instead of the evaluation function ⁇ S 1 .
  • ⁇ S 2 the same daylight color fluorescent light source spectrum as that used for the visual evaluation was used.
  • the reflection spectra of the substrates with transparent electrodes (A) 1 to (A) 4 and the substrates (B) 1 to (B) 4 were measured.
  • Table 3 shows the results obtained by this calculation. It can be seen that ⁇ S 2 corresponds to the order of visual evaluation as well as ⁇ S 1 .
  • Table 2 shows correlation coefficients between ⁇ V 2 (Examples 3 to 24) and visual results (levels 1 to 4).
  • Table 3 shows ⁇ S 2 (Examples 25 to 47) and visual results (levels 1 to 4).
  • the correlation coefficient with 4) is shown.
  • the correlation coefficient is a statistical index indicating the correlation between two variables, and the covariance of two variables ( ⁇ V 2 -level in Table 2 and ⁇ S 2 -level in Table 3), respectively. It can be obtained by dividing by the standard deviation. The closer the correlation coefficient is to ⁇ 1, the more the ⁇ V 2 or ⁇ S 2 matches with the visual evaluation.
  • FIG. 13 is a plane triangular coordinate showing the relationship between the values of the coefficients l, m and n of the color matching function C 2 ( ⁇ ) and visual evaluation in ⁇ V 2 (Examples 3 to 24).
  • FIG. 14 is a plane triangular coordinate showing the relationship between the values of the coefficients l, m and n of the color matching function C 2 ( ⁇ ) and visual evaluation in ⁇ S 2 (Examples 25 to 47).
  • 13 and 14 show the correlation coefficient between ⁇ V 2 or ⁇ S 2 and the visual results (levels 1 to 4), and “ ⁇ ” indicates that the correlation coefficient is ⁇ 1 or more and ⁇ 0.99 or less. , “ ⁇ ” for a value greater than ⁇ 0.99 and ⁇ 0.97 or less, “ ⁇ ” for a value greater than ⁇ 0.97 and ⁇ 0.95 or less, and “ ⁇ ” for a value greater than ⁇ 0.95 Is shown.

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Abstract

La présente invention concerne un procédé d'évaluation d'un substrat à électrode transparente pour lequel on mesure la réflexivité spectrale (RA(λ)) d'un substrat à électrode transparente (A) et la réflexivité spectrale (RB(λ)) d'un substrat (B) sur lequel la couche transparente de film conducteur du substrat à électrode transparente (A) est absente, et l'on calcule la valeur absolue (ΔR(λ)) du spectre de la différence entre la réflexivité spectrale (RA(λ)) et la réflexivité spectrale (RB(λ)) à chaque longueur d'onde. Un mode de réalisation est caractérisé en ce que, en tant qu'index de non-visibilité d'un motif d'électrode transparente, on utilise soit la valeur de ΔV1, qui est obtenue par multiplication de ΔR(λ) et de la somme (C1(λ)) de fonctions isochromatiques à chaque longueur d'onde et par intégration du résultat sur une région de longueur d'onde de 380 à 780 nm, soit la valeur de ΔS1, qui est obtenue par multiplication de ΔR(λ) et de C1(λ) par un spectre de source de lumière (L(λ)) à chaque longueur d'onde et par intégration du résultat sur la région de longueur d'onde de 380 à 780 nm.
PCT/JP2014/075962 2013-10-10 2014-09-29 Substrat à électrode transparente, procédé d'évaluation de substrat à électrode transparente, procédé de fabrication de substrat à électrode transparente, panneau tactile et procédé de fabrication de panneau tactile WO2015053124A1 (fr)

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JP2017033034A (ja) * 2015-07-17 2017-02-09 大日本印刷株式会社 タッチパネル用積層体、及び、折り畳み式画像表示装置

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JP2006200960A (ja) * 2005-01-19 2006-08-03 Seiko Epson Corp 異なる観察条件下で測色した測色値の補正
JP2010041651A (ja) * 2008-08-08 2010-02-18 Ricoh Co Ltd 色再現範囲評価法、色再現範囲評価装置及び画像形成装置
JP2010076232A (ja) * 2008-09-25 2010-04-08 Gunze Ltd 透明面状体及び透明タッチスイッチ
JP2010182528A (ja) * 2009-02-05 2010-08-19 Toppan Printing Co Ltd 透明導電性フィルム
JP2011243102A (ja) * 2010-05-20 2011-12-01 Dainippon Printing Co Ltd タッチパネルセンサ、およびタッチパネルセンサを作製するための積層体

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Publication number Priority date Publication date Assignee Title
JP2006200960A (ja) * 2005-01-19 2006-08-03 Seiko Epson Corp 異なる観察条件下で測色した測色値の補正
JP2010041651A (ja) * 2008-08-08 2010-02-18 Ricoh Co Ltd 色再現範囲評価法、色再現範囲評価装置及び画像形成装置
JP2010076232A (ja) * 2008-09-25 2010-04-08 Gunze Ltd 透明面状体及び透明タッチスイッチ
JP2010182528A (ja) * 2009-02-05 2010-08-19 Toppan Printing Co Ltd 透明導電性フィルム
JP2011243102A (ja) * 2010-05-20 2011-12-01 Dainippon Printing Co Ltd タッチパネルセンサ、およびタッチパネルセンサを作製するための積層体

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017033034A (ja) * 2015-07-17 2017-02-09 大日本印刷株式会社 タッチパネル用積層体、及び、折り畳み式画像表示装置

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