WO2015043088A1 - 触控式有机发光二极管显示装置及其制作方法 - Google Patents
触控式有机发光二极管显示装置及其制作方法 Download PDFInfo
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- WO2015043088A1 WO2015043088A1 PCT/CN2013/089684 CN2013089684W WO2015043088A1 WO 2015043088 A1 WO2015043088 A1 WO 2015043088A1 CN 2013089684 W CN2013089684 W CN 2013089684W WO 2015043088 A1 WO2015043088 A1 WO 2015043088A1
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- organic light
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- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
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- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
- G06F3/0487—Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser
- G06F3/0488—Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures
- G06F3/04886—Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures by partitioning the display area of the touch-screen or the surface of the digitising tablet into independently controllable areas, e.g. virtual keyboards or menus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
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- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Definitions
- Embodiments of the present invention relate to a touch-sensitive organic light emitting diode (OLED) display device and a method of fabricating the same.
- OLED organic light emitting diode
- touch electronic products have undergone tremendous changes, and touch electronic products have been increasingly sought after by people. These touch electronic products not only save space, but also are easy to carry, and the user can directly operate by finger or stylus, and is comfortable and convenient.
- PDA personal digital processing
- touch-type mobile phones, portable notebook computers, etc. which are commonly used in the market
- touch devices will have various fields in the future. A wider range of applications.
- the OLED display is displayed in a different way than the conventional LCD (Liquid Crystal Display) display. It does not require a backlight and is formed by a very thin coating of organic material and a glass substrate. These organic materials illuminate when current is passed through. Therefore, the characteristics of the OLED are self-luminous, so that the visibility and the brightness are high, and the voltage demand is low and the power saving efficiency is high. Coupled with the advantages of fast response, light weight, thin thickness, simple construction, and low cost, OLED is regarded as one of the most promising products in the 21st century.
- the touch structure of the organic light emitting diode display device is mostly prepared by separately separating the touch screen and the display portion of the organic light emitting diode display device. This increases the weight and thickness of the display itself, and is light and thin compared to the advantages of the OLED display device itself. Summary of the invention
- the embodiment of the invention provides a touch-sensitive organic light-emitting diode display device and a manufacturing method thereof, so as to prevent the existing organic light-emitting diode display device from being prepared by separately separating the display portion of the touch screen and the organic light-emitting diode display device, thereby increasing the display The problem of its own weight and thickness.
- An aspect of the invention provides a touch-sensitive organic light-emitting diode display device, including: a thin film transistor formed on one side of a substrate, and a touch signal feedback layer formed on the thin film transistor, A light-emitting substrate disposed on the touch signal feedback layer is formed with a touch signal receiving layer on the other side of the substrate. An anode layer of the light emitting substrate is connected to a drain of the thin film transistor.
- a protective layer is formed on the thin film transistor; the touch signal feedback layer is formed on the protective layer; an interlayer insulating layer is formed on the touch signal feedback layer; and the interlayer insulating layer is formed on the interlayer insulating layer a first via hole is disposed, and a second via hole is disposed on the protective layer, the anode layer is formed on the interlayer insulating layer, and passes through the first via hole and the second via hole The drain of the thin film transistor is connected. Light layer and cathode layer.
- the thickness of the anode layer is 40 ⁇ -70 ⁇ .
- the touch signal receiving layer and the touch signal feedback layer are each made of at least one of indium gallium oxide, indium oxide, indium tin oxide, and indium gallium tin oxide.
- the thickness of the touch signal receiving layer is 400A-700A; for example, the thickness of the touch signal feedback layer is 40 ⁇ -70 ⁇ .
- the material of the protective layer is SiOx or SiNx.
- Another aspect of the present invention provides a method for fabricating a touch-sensitive OLED display device, including: forming a pattern of a touch signal receiving layer on one side of a substrate; and forming a drain on the other side of the substrate a thin film transistor pattern; a pattern of a touch signal feedback layer formed on the thin film transistor; a pattern of a light emitting substrate including an anode layer formed on the touch signal feedback layer, the anode layer being connected to the drain .
- a pattern of a protective layer having a second via hole is formed on a source and a drain of the thin film transistor; a pattern of the touch signal feedback layer is formed on the protective layer; and the touch signal is fed back Forming an interlayer insulating layer having a first via hole on the layer; forming a pattern of the anode layer on the interlayer insulating layer, and the anode layer passes through the first via hole and the second via hole and Drain connection.
- a pattern of the light-emitting layer and a pattern of the cathode layer are sequentially formed on the anode layer by a patterning process.
- FIG. 1 is a schematic structural view of a touch-type organic light emitting diode display device after the first photolithography process is completed in the first embodiment of the present invention
- FIG. 2 is a schematic structural view of a touch-type organic light emitting diode display device after the second photolithography process is completed in the first embodiment of the present invention
- FIG. 3 is a schematic structural view of a touch-type organic light emitting diode display device after the third photolithography process is completed in the first embodiment of the present invention
- FIG. 4 is a schematic structural view of a touch-type organic light-emitting diode display device after the fourth photolithography process is completed in the first embodiment of the present invention
- FIG. 5 is a schematic structural view of a touch-type organic light emitting diode display device after the fifth photolithography process is completed in the first embodiment of the present invention
- FIG. 6 is a schematic structural view of a touch-type organic light-emitting diode display device after the sixth photolithography process is completed in the first embodiment of the present invention
- FIG. 7 is a schematic structural view of a touch-type organic light-emitting diode display device after the seventh photolithography process is completed in the first embodiment of the present invention
- FIG. 8 is a schematic structural view of a touch-type organic light-emitting diode display device after the eighth photolithography process is completed in the first embodiment of the present invention
- FIG. 9 is a schematic structural view of a touch-type organic light emitting diode display device after the ninth photolithography process is completed in the first embodiment of the present invention.
- FIG. 10 is a schematic structural view of a touch-type organic light emitting diode display device after the tenth photolithography process is completed in the first embodiment of the present invention
- FIG. 11 is a schematic structural view of a touch-type organic light emitting diode display device after the eleventh photolithography process is completed in the first embodiment of the present invention
- FIG. 12 is a schematic structural view of a touch-type organic light emitting diode display device after the twelfth photolithography process is completed in the first embodiment of the present invention
- FIG. 13 is a cross-sectional view showing a tubular organic light emitting diode display device according to an embodiment of the present invention.
- FIG. 14 is a schematic diagram of a touch electrode orthogonal strip electrode according to an embodiment of the invention.
- Figure 15 is a schematic view showing the structure of a touch type organic light emitting diode display device according to a second embodiment of the present invention.
- a touch-type organic light-emitting diode display device is a bottom-gate structure.
- the touch-sensitive organic light-emitting diode display device includes a thin film transistor A formed on one side of the substrate 2, and a touch signal feedback layer 9 is formed on the thin film transistor A, and the touch signal is fed back.
- the light-emitting substrate B is provided on the layer 9, for example, the anode layer 11 of the light-emitting substrate B is connected to the drain 72 of the thin film transistor A, and the touch signal receiving layer 1 is formed on the other side of the substrate 2.
- the touch type organic light emitting diode display device of the embodiment includes a pixel array defined by a gate line, a data line (and a power line), each pixel in the array having at least one thin film transistor as a switching element and a driving element, and as a light emitting element Organic light-emitting diodes.
- the organic light emitting diode may emit red light, green light, blue light or white light, etc., as needed.
- the touch-sensitive OLED display device of the present embodiment forms a touch signal receiving layer 1 on one side of the substrate 2, and forms a touch signal feedback layer 9 on the thin film transistor A.
- the anode layer 11 and the thin film transistor of the light-emitting substrate B are formed.
- the drain 72 of A is connected, and the touch signal feedback layer 11 is disposed inside the thin film transistor A, thereby realizing the integration of the touch screen and the display portion of the organic light emitting diode, thereby greatly reducing the weight and thickness of the display itself.
- the thin film transistor includes: a gate electrode 3 formed on the substrate 2; a gate insulating layer 4 covering the gate electrode 3 and extending onto the substrate 2; An active layer 5 formed on the gate insulating layer 4 and above the gate electrode 2; overlying the active layer 5 and a barrier layer 6 extending on the gate insulating layer 4; a source electrode 71 and a drain electrode 72 are formed on the barrier layer 6, and the source electrode 71 and the drain electrode 72 are connected to the active layer 5; a protective layer 8 formed on the source 71 and the drain 72; the touch signal feedback layer 9 is formed on the protective layer 8; and an interlayer insulating layer 10 is formed on the touch signal feedback layer 9; a first via hole is disposed on the interlayer insulating layer 10, and a second via hole is disposed on the protective layer 8.
- the anode layer 11 is formed on the interlayer insulating layer 10, and passes through the A via hole and a second via hole are connected to the drain electrode 72 of the thin film transistor A; a light emitting layer and a cathode layer are sequentially formed on the anode layer 11.
- the anode layer 11, the light emitting layer, and the cathode layer constitute an organic light emitting diode.
- FIG. 1-12 is a schematic diagram of a method for fabricating a touch-sensitive organic light-emitting diode display device according to the present invention, which may further illustrate the technical solution of the embodiment.
- the patterning process referred to in the present invention includes a process of photoresist coating, masking, exposure, etching, and photoresist stripping, and the photoresist is exemplified by a positive photo-stretched strand.
- the substrate 2 may be a transparent alkali-free glass substrate or a quartz substrate, or a transparent substrate having a certain hardness.
- the touch-type organic light-emitting diode display device of the first embodiment is formed by using a plurality of patterning processes, and the process flow of the plurality of patterning processes is as follows.
- Step 1 sputtering the touch signal receiving layer 1 on the side of the cleaned substrate 2, for example, it may be at least one of indium gallium zinc oxide, indium oxide, indium tin oxide, and indium gallium tin oxide.
- a material is made, for example, made of Indium Tin Oxides (ITO), for example, its thickness can be controlled at 40 ⁇ -70 ⁇ .
- Step 2 as shown in FIG. 2, the substrate 2 prepared in step 1 is turned over, and the gate 3 is formed on the other side of the cleaned substrate 2 by magnetron sputtering or thermal evaporation.
- the material may be Mo or AlNd/Mo is selected, for example, its thickness can be controlled at 200 ⁇ -300 ⁇ .
- Step 3 depositing a gate insulating layer 4 on the substrate 2 on which the step 2 is completed, the gate insulating layer 4 covering the gate 3 and extending onto the substrate 2, such as a gate
- the pole insulating layer 4 is made of SiOx or SiNx and has a thickness of about 4000A.
- Step 4 as shown in FIG. 4, an active layer 5 is formed by sputtering on the substrate 2 on which the step 3 is completed, for example, it is made of indium gallium zinc oxide (IGZO), and the sputtering thickness is 40nm-60nm.
- IGZO indium gallium zinc oxide
- the material of the active layer 5 is not limited to, for example, an oxide semiconductor material of IGZO, and may be, for example, amorphous silicon or the like.
- Step 5 depositing a barrier layer 6 on the substrate 2 of step 4, the barrier layer 6 covering the active layer 5 and extending onto the gate insulating layer 4, for example, a material thereof It may be SiOx and the thickness is controlled to be around ⁇ . After annealing for one hour, it is then subjected to gluing, exposure, development, wet etching, and peeling to form contact vias.
- Step 6 as shown in FIG. 6, sputtering a conductive layer for forming the source 71 and the drain 72 on the substrate 2 of the step 5, after being glued, exposed, developed, wet-etched, and stripped to complete the source 71 and the drain
- the figure of the pole 72 the material of the conductive layers of the source 71 and the drain 72 may be selected from Mo or AlNd/Mo, and the thickness is controlled between 2000 A and 3000 A.
- Step 7 as shown in FIG. 7, a photoresist is applied on the substrate 2 of the step 6 to form a protective layer 8, for example, the material of the protective layer may be SiOx or SiNx, and then exposed to develop a second via.
- a photoresist is applied on the substrate 2 of the step 6 to form a protective layer 8, for example, the material of the protective layer may be SiOx or SiNx, and then exposed to develop a second via.
- Step 8 as shown in FIG. 8, sputtering the touch signal feedback layer 9 on the substrate 2 of the step 7, for example, at least one of indium gallium oxide, indium oxide, indium tin oxide, and indium gallium tin oxide.
- the thickness can be controlled at 40 ⁇ -70 ⁇ .
- Step 9 as shown in Fig. 9, an interlayer insulating layer 10 is formed on the substrate 2 of the step 8, and is cured, developed, and exposed to form a first via hole.
- Step 10 as shown in FIG. 10, sputtering the anode layer 11 on the substrate 2 of the step 9, for example,
- the thickness is controlled at around 400A-700A.
- the anode pattern is completed by gluing, exposing, developing, wet etching, and stripping.
- the light-emitting layer 12 is evaporated on the substrate 2 of the step 10.
- the light-emitting layer 12 is an organic light-emitting layer, and may further include a functional layer such as a hole transport layer (HTL) and an electron transport layer (ETL).
- HTL hole transport layer
- ETL electron transport layer
- Step 12 as shown in Fig. 12, the cathode layer 13 is evaporated on the substrate 2 of the step 11.
- the cathode layer 13 is evaporated on the substrate 2 of the step 11.
- it is made of a metal such as Ag, Al, Ca, In, Li, and Mg having a low work function, or a composite metal having a low work function (e.g., Mg-Ag).
- the choice of materials made by the organic light emitting diode display device has a wide range of flexibility, and embodiments of the present invention do not require it.
- the touch signal receiving layer 1 is formed on one side of the substrate 2, the touch signal feedback layer 9 is formed on the thin film transistor A, and then the light emitting substrate B is further disposed on the thin film transistor A, and then the external total is
- the control circuit connects the touch signal receiving layer 1 and the touch signal feedback layer 9 to achieve touch display.
- Fig. 14 is a view showing the strip electrodes in the touch signal receiving layer 1 and the touch signal feedback layer 9.
- the touch signal receiving layer 1 can receive the pulse signal in the X direction
- the touch signal feedback layer 9 can receive the pulse signal in the Y direction.
- a pulse signal of the Y direction is applied to the touch electrodes on one of the touch signal feedback layers 9, the other columns are grounded, and at the same time, the sensing electrodes on the touch signal receiving layer 1 are detected line by line.
- the touch display is touched, the capacitance of the touched position is changed, and after the above scanning, the intersection of the position where the capacitance is changed can be determined, and the control circuit C can obtain the touch screen by algorithm calculation.
- the control circuit C can send the result to, for example, a central processing unit (CPU) to display the display position on the touch screen or perform corresponding operations according to predetermined settings to achieve the touch purpose.
- a finger touches it is equivalent to a change in capacitance, and a voltage or a charge can be detected.
- the touch signal feedback layer can also be interchanged with the touch signal receiving layer, that is, the touch signal feedback layer can also receive the X-direction pulse signal, and the corresponding touch on the touch signal receiving layer.
- the control electrode is added with a pulse signal in the Y direction, which can also achieve the purpose of touch.
- the design signals commonly used for the touch signal receiving layer 1 and the touch signal feedback layer 9 may be a bar graph, a rhombic graph, and a triangle graph, and a rhombic pattern is commonly used.
- the design generally requires that the connection between the patterns be too long. If the connection is too long, the line resistance will be too large, thus prolonging the scan time.
- the diamond shape for each row and column should be complete, and if the space allows it, it can be expanded outward to increase the sensitivity of the edge. Semi-diamonds are used at the end of each row and column, but the semi-diamonds should not be too large, so as to avoid different sensing areas of rows and columns, resulting in inconsistent scanning detection.
- the connection between the touch pattern and the external total control circuit can be made of metal such as nano silver, Al, Cu, etc., and the length can be controlled between 50um and 200um.
- a touch-type organic light-emitting diode display device is a top-gate structure.
- the touch-sensitive OLED display device of the second embodiment includes: a touch signal receiving layer 1 formed on the side of the substrate 2; and formed on the other side of the substrate 2 a buffer layer 14; an active layer 5 formed on the buffer layer 14; a gate insulating layer 4 covering the active layer 5 and extending over the buffer layer 14, and having a contact on the gate insulating layer 4 a hole 3; a gate electrode 3 formed on the gate insulating layer 4 and above the active layer 5; a flat layer 15 covering the gate electrode 3 and extending over the gate insulating layer 4, in the interlayer insulating layer 10 a contact via is formed thereon; a source 71 and a drain 72 are formed on the interlayer insulating layer 10, and the source 71 and the drain 72 are connected to the gate 5 through the contact via; covering the source 71 and the drain a protective layer 8 on the interlayer 72
- the manufacturing method of this embodiment is similar to that of the first embodiment, and the process flow is as follows.
- Step 1 sputtering a touch signal receiving layer 1 on one side of the cleaned substrate 2 , for example, it may be made of at least one of indium gallium oxide, indium oxide, indium tin oxide, and indium gallium tin oxide.
- the thickness can be controlled at 40 ⁇ -70 ⁇ .
- step 2 the substrate 2 prepared in the step 1 is turned over, and the buffer layer 14 is sputtered on the other side of the cleaned substrate 2.
- the active layer 5 is partially sputter-deposited on the substrate 2 on which the step 2 is completed.
- it may be made of IGZO and sputtered to a thickness of 40 nm to 60 nm. After being glued, exposed, developed, wet-etched, peeled, cured, the active layer is completed.
- Step 4 depositing a gate insulating layer 4 on the substrate 2 on which the step 3 is completed, the gate insulating layer 4 covering the active layer 5 and extending onto the buffer layer 14, for example, the material adopts SiOx and SiNx, thickness can be controlled at about 4000A, cured, developed, and exposed to form contact vias.
- Step 5 sputtering the gate 3 on the substrate 2 on which the step 4 is completed.
- the material may be Mo or AlNd/Mo, and the thickness may be controlled at 200 ⁇ -300 ⁇ . After the glue is applied, exposed, developed, wet-etched, and peeled off, the first layer of the gate pattern is completed.
- Step 6 forming a flat layer 15 on the substrate 2 on which the step 5 is completed, the interlayer insulating layer 10 It covers the gate electrode 3 and extends onto the gate insulating layer 4, which is cured, developed, and exposed to form an ITO contact via.
- Step 7 On the substrate 2 on which the step 6 is completed, a conductive layer for forming the source 71 and the drain 72 is sputtered, and the source and drain patterns are completed by coating, exposing, developing, wet etching, and stripping.
- the conductive layer may be selected from materials of Mo or AlNd/Mo, and the thickness is controlled between 2000 A and 3000 A.
- Step 8 Applying a photoresist to the substrate 2 on which the step 7 is completed to form a protective layer 8, for example, the material of the protective layer may be SiOx or SiNx, and then exposed to develop a second via hole.
- the material of the protective layer may be SiOx or SiNx
- Step 9 Sputtering the touch signal feedback layer 9 on the substrate 2 on which the step 8 is completed.
- it may be made of at least one of indium gallium oxide, indium oxide, indium tin oxide, and indium gallium tin oxide. It can be controlled at 400A-700A, and the touch signal feedback layer pattern is completed after being glued, exposed, developed, etched and peeled off.
- step 10 a photoresist is coated on the substrate 2 on which the step 9 is completed to form an interlayer insulating layer 10, which is then exposed and developed to form a first via.
- Step 11 Sputtering the anode layer 11 on the substrate 2 on which the step 10 is completed, for example, it is made of ITO, and the thickness is controlled to be about 400A-700A. After the glue is applied, exposed, developed, wet-etched, and peeled off to complete the anode pattern.
- the light-emitting layer 12 is evaporated on the substrate 2 on which the step 11 is completed.
- the light-emitting layer 12 is an organic light-emitting layer, and may further include a functional layer such as a hole transport layer (HTL) and an electron transport layer (ETL).
- HTL hole transport layer
- ETL electron transport layer
- the cathode layer 13 is evaporated on the substrate 2 on which the step 12 is completed.
- it is made of a metal such as Ag, Al, Ca, In, Li, and Mg having a low work function, or a composite metal having a low work function (for example, Mg-Ag).
- the package can be packaged, and after the package is completed, the fabrication of the device is completed.
- the touch display can be realized after subsequent circuit wiring.
- the thin film transistor of the embodiment of the present invention may be a P-type field effect transistor or an N-type field effect transistor.
- the touch-sensitive organic light-emitting diode display device of the embodiment of the present invention includes a thin film transistor formed on one side of the substrate, and a touch signal feedback layer is formed on the thin film transistor.
- a light-emitting substrate is disposed on the feedback layer, an anode layer of the light-emitting substrate is connected to a drain of the thin film transistor, and a touch signal receiving layer is formed on the other side of the substrate.
- the touch signal feedback layer is disposed inside the thin film transistor, and realizes the integration of the touch screen and the display portion of the organic light emitting diode, thereby solving the problem that the touch screen and the display portion of the organic light emitting diode need to be separated, thereby greatly reducing the display. Its own weight and thickness saves production costs.
- the manufacturing method of the touch-sensitive organic light-emitting diode display device of the embodiment of the invention enables the touch signal feedback layer to be located in the thin film transistor, and the manufacturing step is completed, which saves the manufacturing cost and reduces the fabrication method by the method.
- the thickness of the display device is not limited to the thickness of the display device.
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CN106298859B (zh) * | 2016-09-30 | 2018-09-04 | 京东方科技集团股份有限公司 | 触控面板及显示装置 |
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