WO2015041435A1 - Vertical-type light-emitting device package - Google Patents

Vertical-type light-emitting device package Download PDF

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Publication number
WO2015041435A1
WO2015041435A1 PCT/KR2014/008576 KR2014008576W WO2015041435A1 WO 2015041435 A1 WO2015041435 A1 WO 2015041435A1 KR 2014008576 W KR2014008576 W KR 2014008576W WO 2015041435 A1 WO2015041435 A1 WO 2015041435A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
vertical light
phosphor plate
vertical
Prior art date
Application number
PCT/KR2014/008576
Other languages
French (fr)
Korean (ko)
Inventor
마츠다슈헤이
삼페이토모히로
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR20130111963A external-priority patent/KR20150032007A/en
Priority claimed from KR20130115428A external-priority patent/KR20150035176A/en
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Publication of WO2015041435A1 publication Critical patent/WO2015041435A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • An embodiment relates to a vertical light emitting device package.
  • a lamp is a device that supplies or regulates light for a specific purpose.
  • a light source of a lamp an incandescent bulb, a fluorescent lamp, a neon lamp, or the like may be used. Recently, a light emitting diode (LED) has been used.
  • LED light emitting diode
  • LED is a device that changes the electric signal to infrared or light by using the compound semiconductor characteristics, unlike fluorescent lamps do not use harmful substances such as mercury, so there is little cause of environmental pollution.
  • LEDs have a longer life and consume less power than incandescent, fluorescent, and neon lights.
  • the LED may have the advantage of excellent visibility and less glare due to the high color temperature.
  • Lamp units using LEDs are widely adopted by the above advantages, and are used, for example, in backlights, display devices, lighting lamps, or head lamps.
  • Lamp units using LEDs are suitable for use in vehicle lamps due to their excellent visibility and low glare. Because the vehicle can recognize the vehicle or the driving state of the vehicle from the outside by using the light emission of the lamp unit, if the visibility of the lamp unit is excellent and the glare is small, the driver or the pedestrian of another adjacent vehicle can recognize the vehicle or This is because the driving state can be clearly identified.
  • Such LEDs of a vehicle lamp are generally of the flip type or of the vertical type.
  • the flip type light emitting device refers to a chip in which a bump is formed on the light emitting device without wire bonding and then the bump is contacted with the mounting substrate to connect the chip and the circuit of the substrate.
  • the flip type light emitting device is advantageous in size and weight because the package size is the same as the size of the light emitting device, but the light emitting efficiency is not as good as that of the vertical light emitting device.
  • the vertical light emitting device has a structure suitable for high output and good heat dissipation characteristics, but the yield is not high yet, in particular, there is a problem that the electrode is contaminated due to the adhesive used to adhere the plate to the light emitting device.
  • Embodiments provide a vertical light emitting device package in which the concentration of current is relaxed to improve reliability and reduce light emission unevenness.
  • the embodiment provides a vertical light emitting device package having low thermal resistance and improved luminous flux maintenance.
  • the embodiment provides a vertical light emitting device package with uniform color distribution.
  • the embodiment provides a vertical light emitting device package capable of preventing contamination of the light emitting device by the adhesive material.
  • the present invention provides a vertical light emitting package capable of protecting resin encapsulation and wire bonding.
  • the embodiment provides a vertical light emitting device package with low light loss and capable of alleviating stress applied to a wire neck portion.
  • a vertical light emitting device package includes a substrate; A vertical light emitting device disposed on the substrate; A phosphor plate disposed on the vertical light emitting device and having a space formed along at least one side of a bottom portion thereof; And an adhesive disposed between the vertical light emitting device and the phosphor plate and disposed in a space of the phosphor plate.
  • the space may be a recessed groove along the side of the bottom of the phosphor plate.
  • the space may have a square cross section along the side of the bottom of the phosphor plate.
  • the space may be a groove in which a cross section is concave in an arc shape along the side of the bottom of the phosphor plate.
  • the space may have a right triangle along a side of the bottom of the phosphor plate.
  • the space may be formed in plural, with a predetermined interval along the side of the bottom of the phosphor plate.
  • the space may be formed with a predetermined width along the edge of the bottom portion.
  • the bottom surface of the phosphor plate may have a smaller area than the top surface of the vertical light emitting device, and may have a larger area than the light emitting part of the vertical light emitting device.
  • the phosphor plate may be a glass plate containing phosphor.
  • the substrate includes a first power supply lead and a second power supply lead electrically separated from each other, and the vertical light emitting device is formed on an upper portion of each of the first power supply lead and a pair of wires.
  • an antistatic treatment layer may be disposed on the surface of the phosphor plate.
  • the vertical light emitting device package according to the embodiment can improve the reliability and reduce the light emission unevenness by relaxing the concentration of the current.
  • the thermal resistance is low, and the luminous flux maintenance rate can be improved.
  • the color distribution may be uniform.
  • optical loss is small, and the stress applied to the wire neck portion can be alleviated.
  • FIG. 1 is a perspective view of a vertical light emitting device package according to the first embodiment.
  • FIG. 2 is a perspective view of a light emitting device and a phosphor plate of the light emitting device package shown in FIG. 1.
  • 3 is a table showing the appearance and luminance distribution of the double wire vertical light emitting device, the single wire vertical light emitting device, and the flip type light emitting device.
  • FIG. 4A and 4B are side and plan views of the vertical light emitting device package shown in FIG. 1.
  • FIG. 5A is a bottom perspective view of the phosphor plate of the vertical light emitting device package shown in FIG. 1, and FIGS. 5B to 5E illustrate various embodiments of a drawing space capable of accommodating an adhesive.
  • 6A and 6B are side and top views of the phosphor plate shown in FIG. 5A.
  • FIG. 7A is a block diagram of a general lighting device
  • FIG. 7B is a block diagram of a lighting device including a vertical light emitting device package according to an embodiment.
  • FIG 8 is a plan view showing a state after the test before the test of the vertical light emitting device package including the resin-type phosphor.
  • 9A and 9B are a perspective view and a side view of a vertical light emitting device package according to the second embodiment.
  • FIGS. 10A and 10C are plan views of the vertical light emitting device package of FIG. 10A.
  • FIG. 11A is a perspective view of a vertical light emitting device package according to a third embodiment used for an illumination device
  • FIGS. 11B and 11C are plan views of the vertical light emitting device package of FIG. 11A.
  • FIGS. 12A and 12C are plan and side views of the vertical light emitting device package of FIG. 11A.
  • each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description.
  • the size of each component does not necessarily reflect the actual size.
  • FIG. 1 is a perspective view of a vertical light emitting device package according to a first embodiment
  • FIG. 2 is an exploded perspective view of a light emitting device and a phosphor separated from the vertical light emitting device package shown in FIG. 1.
  • the vertical light emitting device package 10 may include a substrate 100, a vertical light emitting device 200, and a phosphor plate 300.
  • At least one vertical light emitting device 200 may be disposed on the substrate 100.
  • the phosphor plate 300 may be attached to the light emitting device 200 by the adhesive material 500.
  • the substrate 100 serves as a body of the light emitting device package 10 and may be various kinds such as a printed circuit board (PCB), a silicon wafer, and a resin. In addition, depending on the material used as the substrate 100 may be classified into a plastic package, a ceramic package, a metal package.
  • An insulating layer (not shown) may be disposed on the substrate 100.
  • the insulating layer serves to block electrical connections between the substrate 100 and other components. However, when the substrate 100 is made of a nonconductive material, the insulating layer may not be disposed.
  • the first power supply lead 110 and the second power supply lead 120 may be disposed on the substrate 100.
  • the first power supply lead 110 and the second power supply lead 120 are electrically separated from each other and electrically connected to the vertical light emitting device 200, respectively. Since at least one vertical light emitting device 200 is present, the first power supply lead 110 and the second power supply lead 120 may also be formed in one or more so that each vertical light emitting device 200 is connected. have.
  • At least one vertical light emitting device 200 may be disposed on the substrate 100.
  • the vertical light emitting device 200 may be a light emitting diode (LED), but is not limited thereto.
  • the light emitting diode may be a red, green, blue, or white light emitting diode emitting red, green, blue, or white light, respectively, but is not limited thereto.
  • Light emitting diodes are a type of solid state device that converts electrical energy into light and generally comprise an active layer of semiconductor material sandwiched between two opposing doped layers. When a bias is applied across the two doped layers, holes and electrons are injected into the active layer and then recombined therein to generate light, and the light generated in the active layer is emitted in all directions or in specific directions to emit light through the exposed surface. Will be released out.
  • the vertical light emitting device 200 may include an upper electrode 210 and a lower electrode (not shown).
  • the upper electrode 210 of the vertical light emitting device 200 may be connected to the first power supply lead 110, and the lower electrode (not shown) may be connected to the second power supply lead 120.
  • the upper electrode 210 may be connected to the second power supply lead 120, and the lower electrode (not shown) may be connected to the first power supply lead 120.
  • the upper electrode 210 of the vertical light emitting device 200 may be connected to the first power supply lead 110 by a wire 400, and the lower electrode (not shown) may be directly connected to the second power supply lead 120. have.
  • two upper electrodes 210a and 210b may include a first power supply lead 110 and two wires 400a and 400b. It may be a double wire vertical light emitting device connected to). By using the double wire vertical light emitting device, it is possible to prevent current from being concentrated than the single wire vertical light emitting device or the flip type light emitting device. This improves the reliability and has the effect of reducing unevenness caused by light emission.
  • Table 1 and Figure 3 shows a flip-type light emitting device, a single wire vertical light emitting device, a double wire vertical light emitting device.
  • the double-wire vertical light emitting device can be seen that the luminance distribution is evenly distributed throughout the light emitting device than the single-wire vertical light emitting device and flip-type light emitting device. Therefore, there is an advantage that the light emission reliability is increased and the color deviation is reduced.
  • the double-wire vertical light emitting device has excellent heat dissipation, light emission efficiency, and good heat resistance.
  • the thermal resistance of the flip type light emitting device is 2.3 ° C./W
  • the thermal resistance of the vertical type light emitting device 200 is 1.5 ° C./W. Therefore, the vertical light emitting device 200 has an effect of improving reliability compared to the flip light emitting device.
  • the upper electrode 210 of the vertical light emitting device 200 may be connected to the first power supply lead 110 and the wire 400. That is, the upper electrode 210 may include two electrodes 210a and 210b and may be connected to the first power supply lead 110 and two wires 400a and 400b.
  • the phosphor plate 300 is a plate containing a phosphor for dispersing light generated in the active layer of the vertical light emitting device 200, and is disposed above the vertical light emitting device 200.
  • the adhesive 500 is applied to the lower portion of the phosphor plate 300, and the phosphor plate 300 is disposed on the vertical light emitting device 200 by the adhesive 500.
  • the phosphor plate 300 may be disposed to cover the remaining portions except for the two upper electrodes 210a and 210b of the upper portion of the vertical light emitting device 200.
  • Two upper electrodes 210a and 210b of the vertical light emitting device 200 may be formed at corners close to the first power supply lead 110.
  • the length of the wire connecting the first power supply lead 110 may be reduced.
  • Two corners close to the first power supply lead 110 among the corners of the phosphor plate 300 may be formed so as not to cover the upper electrodes 210a and 210b.
  • 4A and 4B are a side view and a plan view showing the standards of the vertical light emitting device 200 and the phosphor plate 300 according to the first embodiment.
  • the height of the vertical light emitting device 200 is 0.12 and the height of the phosphor plate 300 may be 0.2. have.
  • the light emitting device 200 may have a square shape, and the phosphor plate 300 may basically have a square shape having a width and length of 0.98, but two edges thereof may not cover the upper electrodes 210a and 210b.
  • Concave recesses 320a and 320b may be formed toward the center of the recess.
  • the light emitting unit 240 that emits substantially the light from the vertical light emitting device 200 may also be formed to concave toward the center of the light emitting unit 240 at two corners in a square having a vertical width of 0.935. .
  • the size of the light emitting device 200, the phosphor plate 300, and the light emitting unit 240 may be the light emitting device 200> the phosphor plate 300> the light emitting unit 240.
  • the vertical light emitting device 200 when the size of the vertical light emitting device 200 is larger than the size of the phosphor plate 300, the vertical light emitting device 200 can stably support the phosphor plate 300.
  • the size of the phosphor plate 300 is larger than the size of the light emitter 240, the entire light generated in the active layer of the vertical light emitting device 200 may be emitted through the phosphor plate 300. Therefore, according to 1st Embodiment, there exists an effect which can achieve uniformity of color distribution, aiming at stability of the whole structure. Therefore, the light emitting device package according to the first embodiment has high reliability and small color deviation.
  • the light emitting device package according to the first embodiment may implement an LED light source having low thermal resistance.
  • the wire 400 may be selected in consideration of product reliability, productivity, cost, performance, and the like.
  • the material of the wire 400 may be a metal such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), or the like.
  • the adhesive material 500 may use a heat resistant and light resistant material.
  • a heat resistant and light resistant material may be silicon, a fluororesin, and an inorganic (glass) paste.
  • the adhesive 500 is heat resistant and light resistant, the reliability of the light emitting device package may be improved, and thus the luminous flux maintenance rate may be improved.
  • the phosphor plate 300 When the phosphor plate 300 is bonded to the vertical light emitting device 200 by the adhesive 500, the phosphor plate 300 is lighted by a gap between the phosphor plate 300 and the vertical light emitting device 200. Can prevent leakage. When the phosphor plate 300 is adhered to the vertical light emitting device 200, the phosphor plate 300 may stably guide the light of the vertical light emitting device 200.
  • FIG 5A is a bottom perspective view of the phosphor plate 300 according to the first embodiment
  • FIGS. 6A and 6B are side views and a plan view of the phosphor plate 300.
  • the phosphor plate 300 may have a space 310 formed along at least one side of the phosphor plate 300.
  • the adhesive 500 may be introduced into the space 310.
  • the groove 310 serving as an insertion space of the adhesive material is processed on the adhesive surface of the phosphor plate 300 to which the adhesive material 500 is applied.
  • the groove 310 is formed to be concave along at least one or more sides of the bottom of the phosphor plate 300.
  • the adhesive material 500 may be accommodated in the groove 310.
  • the drawing space 310 of the phosphor plate 300 according to the first embodiment is not limited to the shape of the groove 310 shown in FIG. 5A, and may have various shapes that may form a space for accommodating the adhesive material 500. It includes the structure of.
  • FIGS. 5B to 5E illustrate various embodiments 300 ', 300', 300 ', 300' and 300 'of an entrance space capable of accommodating an adhesive.
  • the cross section of the retraction space 310 ′ has a square shape. Since the cross section is square, the storage efficiency of adhesive material is high.
  • the inlet space 310 ′ ′ has an arc shape in cross section. Since the cross section is arc-shaped, there is no risk of cracking because there is no angled portion.
  • the inlet space 310 ′ ′ ′ has a straight line shape inclined in cross section, such as by cutting with a knife. That is, the cross section has the shape of a right triangle.
  • a plurality of lead spaces 310 ′ ′ ′ ′ ′ ′ may be formed in at least one side of the bottom of the phosphor plate 300 ′ ′ ′ ′ at regular or non-uniform intervals. Since the pulling space is not formed on at least one side of the bottom as a whole, it is possible to design a conflict between the efficiency reduction and the effect of receiving the adhesive due to the formation of the pulling space (310 '' '').
  • the inlet space 310 may be formed along the edge of the bottom surface of the phosphor plate 300.
  • the retraction space 310 may be formed to have a predetermined width, and the predetermined width may be a constant value.
  • the width and length of the vertical light emitting device 200 are 1, the height of the phosphor plate 300, that is, the thickness is 0.2, the width and length is 0.98, and the height of the inlet space 310 is 0.02.
  • the width may be 0.04.
  • the height of the inlet space 310 is 0.02 and the width is 0.04, it is stable and efficient for accommodating the adhesive material.
  • the height of the drawing space 310 in which the adhesive 500 is accommodated is preferably 0.01 mm or more.
  • the width of the inlet space 310 may be 0.04 mm so as to be approximately equal to the amount of the adhesive 500 exceeded when the phosphor plate 300 is mounted.
  • the size of the phosphor plate 300 and the lead-in space 310 is not limited to the above-described numerical values, but may vary depending on the size of the light emitting device 200 and the characteristics of the adhesive 500.
  • the drawing space 310 may be formed to accommodate the adhesive 500. If the amount of the applied adhesive 500 is greater than an appropriate amount or the adhesive 500 is not properly applied, before bonding the wire 400 to the upper electrodes 210a and 210b shown in FIG. 2, while the phosphor plate 300 is disposed on the vertical light emitting device 200, the adhesive 500 may contaminate the upper electrodes 210a and 210b of the vertical light emitting device 200.
  • the retraction space 310 may accommodate the adhesive 500 exceeding an appropriate amount or the adhesive 500 that is not properly applied to prevent the adhesive 500 from leaking to the outside of the phosphor plate 300. Accordingly, the upper electrodes 210a and 210b may be protected from the adhesive 500 applied to the plate 300. In addition, by preventing contamination of the upper electrodes 210a and 210b of the vertical light emitting device 200, the bonding performance (W / B) of the wires 400a and 400b is improved.
  • the phosphor plate 300 according to the first embodiment may be a glass plate containing the phosphor. Therefore, since the glass plate 300 contains the phosphor without dispersing the phosphor in the plate or using an encapsulant including the phosphor, the luminous flux maintenance rate can be improved. Therefore, the reliability of the light emitting device package is improved.
  • FIG. 7A is a schematic view of a lighting device including a general vertical light emitting device package 1
  • FIG. 7B is a schematic view of a lighting device including a vertical light emitting device package 10 according to the first embodiment.
  • a light emitting device package 1 is disposed on a substrate MCPCB, and an AR glass is formed on the light emitting device package 1. Is disposed, and the inside of the light emitting device package 1 is filled with a resin containing a phosphor).
  • the phosphor plate 300 according to the first embodiment may have a thickness of 80 ⁇ m or more, and may have a resin bag having no permeability. Therefore, since the AR glass does not need to be used, the cost can be reduced, and since the vertical light emitting device 200 and the phosphor plate 300 are in close contact, there is an effect of preventing the leakage of blue light.
  • an antistatic layer having an antistatic treatment may be disposed on the surface of the phosphor plate 300 according to the first embodiment.
  • the surface resistance of the phosphor plate 300 may be 1010 ⁇ or less by the antistatic treatment.
  • the surface resistance of general glass is 1010 to 1012 ⁇ . Therefore, the phosphor plate 300 according to the first embodiment can prevent contaminants such as dust from adhering to the glass surface.
  • FIG. 8 illustrates a resin type phosphor layer used in a general light emitting device package. Specifically, FIG. 8A is an actual photograph of the phosphor layer before the predetermined test, and FIG. 8B is an actual photograph of the phosphor layer after the predetermined test.
  • the light emitting device package 11 may include a substrate 100, a vertical light emitting device 200, and a phosphor plate 300.
  • the substrate 100, the vertical light emitting device 200, and the phosphor plate 300 are as described in the first embodiment, detailed description thereof will be omitted.
  • 9A and 9B are a perspective view and a side view of the light emitting device package 11 according to the second embodiment.
  • bumps 230 may be formed on the upper electrodes 210 of the vertical light emitting device 200 to prevent contamination of the upper electrodes 210 by the adhesive 500. Can be deployed.
  • bumps 230a and 230b may be disposed on the two upper electrodes 210a and 210b formed on the vertical light emitting device 200.
  • the phosphor plate 300 is disposed on the upper portion of the vertical light emitting device 200.
  • the adhesive 500 may contaminate the upper electrodes 210a and 210b of the vertical light emitting device 200.
  • the bump 230 may surround the upper electrode 210 to which the wire 400 is connected, thereby preventing the upper electrode 210 from being contaminated by the adhesive 500.
  • the bumps 230 may be formed to surround a part of the upper electrode 210, and the bumps 230 may be formed to surround the entire upper electrode 210 to completely block the contamination by the adhesive 500. It may be.
  • the vertical light emitting device package according to the second embodiment is connected to the upper electrode 210 of the vertical light emitting device 200 to which the wire 400 is connected before attaching the phosphor plate 300 to the vertical light emitting device 200.
  • a bump 230 is formed to surround the bonding portion. Therefore, the upper electrode 210 is prevented from being contaminated by the adhesive 500 in the process of attaching the phosphor plate 300 to the vertical light emitting device 200. In addition, since the contamination of the electrode of the vertical light emitting device 200 is prevented, there is an effect that the wire bonding performance (W / B) is improved.
  • the bumps 230 may be formed in various shapes.
  • bump 230 may be spherical or polyhedral.
  • the bumps may be spherical or regular polyhedral structures with regular polygons in cross section.
  • the bump 230 may be formed by bump plating, but is not necessarily limited thereto.
  • the bump 230 may be made of metal.
  • the bump 230 may be formed of gold having good oxidation resistance, but is not necessarily limited thereto.
  • 10A to 10C illustrate a vertical light emitting device package 1 used in a general vehicle lamp.
  • the short side of the light exit port of the vehicle lamp used as the headlamp in the optical design is 1mm
  • the long side is suitable 4 ⁇ 6mm
  • the size is determined according to the vehicle.
  • the light exit port has a short side of 1 mm and a long side of 5 mm.
  • the vehicle lamp is driven at a high temperature, inorganic materialization of the vertical light emitting device package, in particular, the phosphor layer is inorganicized, and the size of the phosphor plate is increasing.
  • a general vertical light emitting device package 1 may have a shape in which five square light emitting devices each having a width and a length of 1 mm are arranged in a line. That is, the vertical light emitting device package 1 is mounted in accordance with the size of the light exit port of the vehicle lamp. In this case, however, light is not emitted from the upper electrodes 2a and 2b of the light emitting element. This can be seen in the luminance distribution diagram of the double wire vertical light emitting device of Table 1 and FIG.
  • the vertical light emitting device package 1 used for a general vehicle lamp light is emitted from the upper electrodes 2a and 2b of each light emitting device to which wires are connected while light generated by the light emitting device is emitted through the phosphor. I can't. Therefore, the vertical light emitting device package 1 used for a general vehicle lamp does not emit light from the entire light exit port. In addition, the electrode processing and the precision mounting device of the vertical light emitting device is required for mounting the phosphor plate.
  • 11A to 11C show a vertical light emitting device package 10 according to the third embodiment.
  • the vertical light emitting device package 10 according to the third embodiment may mount a light emitting device having a larger size than the light emitting device shown in FIGS. 10A to 10C, as shown in FIGS. 11A to 11C to increase light efficiency. have. That is, the vertical light emitting device package according to the third embodiment may have a form in which four vertical light emitting devices are arranged.
  • an upper portion of the vertical light emitting device 200 may be formed in a square.
  • An upper portion of each of the vertical light emitting devices 200 according to the embodiment of the present invention may have a square shape, and the long side of the light exiting device specification may be approximately an integer multiple of one side of the square of the upper portion of the vertical light emitting device 200. In addition, the short side of the light exit port specification may be longer than one side of the square.
  • the phosphor plate 300 is attached to the upper portion of the vertical light emitting device 200.
  • the second light emitter 242 except for the first light emitter 241 and the first light emitter 241, through which the light emitter 240 of the vertical light emitting device 200 emits light through the light exit port of the vehicle lamp. In this case, since the phosphor plate 300 of the vertical light emitting device package 10 according to the third embodiment may be formed only on the upper portion of the first light emitting portion 241, the electrode processing and precision mounting are not necessary.
  • the second light emitting unit 242 is disposed between the first and second upper electrodes 210a and 210b, and the first light emitting unit 241 is the second light emitting unit 242.
  • the first and second upper electrodes 210a and 210b may have a rectangular shape. Since the light exit port of the vehicle lamp according to the third embodiment is formed to fit the first light emitting part 241, light emitted from the entire area of the first light emitting part 241 is emitted through the light exit port, so that the light efficiency is high. There is.
  • the vertical light emitting device package 1 of FIGS. 10A to 10C has five light emitting devices, there are four intervals between the light emitting devices, which are portions in which light is not emitted. Since the package 10 has four light emitting devices, the spacing between the light emitting devices is also reduced to four, so that the light efficiency is higher.
  • the vertical light emitting device 200 has a square shape, but is not necessarily limited to the square shape. That is, as illustrated in FIGS. 11D and 11E, the vertical light emitting device 200 may have a rectangular shape. For example, as illustrated in FIGS. 11D and 11E, the vertical light emitting device 200 may be a rectangle having a long side in the long side direction of the light exit port or a rectangle having a long side in the short side direction. In this case, the number of light emitting devices may also vary according to the shape of the light emitting devices. In addition, as illustrated in FIG. 11F, the vertical light emitting device of FIG. 11D and the vertical light emitting device of FIG. 11E may be mixed and disposed.
  • FIGS. 12A to 12C illustrate a vertical light emitting device package 10 in which a light guide layer 700 is formed on the second light emitting unit 242 of the vertical light emitting device package 10 shown in FIGS. 11A to 11C.
  • the light of the first light emitting part 241 of the phosphor plate 300 is emitted through the light exit port, but the light of the second light emitting part 242 is It cannot be released.
  • the vertical light emitting device package 10 may be a fluorescent layer 300 for dispersing light on the light emitting device 200, it is not necessarily limited to a plate.
  • the vertical light emitting device package 10 may further include a light guide layer 700 that guides the light of the second light emitting part 242 through the light exit port. It may include.
  • the light guide layer 700 may be disposed above the second light emitting part 242. Therefore, since the light emitted from the second light emitting part 242 is stably emitted by the light guide layer 700, the light efficiency is further increased.
  • the vertical light emitting device package 10 is disposed on the substrate 100, and has a side surface of the phosphor plate 300 and a light guide layer 700.
  • a reflection and wire protection layer 800 surrounding the wire 400 may reflect at least a portion of the light emitted from the phosphor plate 300 or the light guide layer 700, and may protect the wire 400.
  • the vertical light emitting device package 10 includes a substrate 100, a vertical light emitting device 200 positioned on the substrate, and a phosphor plate 300 formed on the vertical light emitting device 200.
  • the vertical light emitting device 200 may be connected to the first power supply lead 110 and the second power supply lead 120 formed on the substrate 100.
  • the upper electrode 210 is formed on the vertical light emitting device 200, and the wire 400 may connect the upper electrode 210 and the first power supply lead 110. Since the structure of the vertical light emitting device package 10 is as described above, a detailed description thereof will be omitted.
  • the light guide layer 700 may reflect or refract the light emitted from the second light emitter 242 to the light exit port.
  • the phosphor plate 300 may include gallium nitride (GaN). Therefore, when the refractive index of the light guide layer 700 is greater than the refractive index of the reflection and wire protection layer 800, the light guide layer 700 may totally reflect the light incident from the second light emitting part 242. For example, since the refractive index of the phosphor plate 300 is 1.4 and the refractive index of gallium nitride (GaN) constituting the reflection and wire protection layer 800 is 2.5, the refractive index range of the light guide layer 700 is 1.4 or more and 2.5 or less. desirable.
  • the incident angle from the second light emitting part 242 to the light guide layer 700 may be greater than or equal to a predetermined angle according to the refractive index ratio between the light guide layer 700 and the reflection and wire protection layer 800.
  • the light guide layer 700 may be formed in an arc shape, as shown in FIG. 12C, but is not necessarily limited thereto.
  • the light guide layer 700 may be an inclined straight line having an inclined cross section because the light from the second light emitting part 242 needs to be totally reflected to the light exit port.
  • the light guide layer 700 of the vertical light emitting device package 10 according to the fourth embodiment may be formed to have high ductility. Therefore, the stress applied to the wire 400 positioned in the light guide layer 700 can be reduced.
  • the light guide layer 700 of the vertical light emitting device package 10 may be formed of a flexible material.
  • the light guide layer 700 may be formed of at least one of a high refractive index silicone gel and a silicone rubber.
  • the flexible light guide layer 700 may be formed on the upper electrode 210 and the second light emitting part 242 to relieve stress applied to the wire neck part.
  • the light guide layer 700 of the vertical light emitting device package 10 according to the fourth embodiment has a low hardness in order to prevent problems such as disconnection of the wire due to stress that may occur in the wire 400. It is preferable to use a resin.
  • the hardness of the resin may vary depending on the configuration of the package, but is generally preferred to be less than shore hardness A50.
  • the wire 400 for bonding with the upper electrodes 210a and 210b is susceptible to breaking, and in particular, the stress applied to the wire neck portion is highest. Therefore, in the vertical light emitting device package 10 according to the fourth embodiment, the ductility of the light guide layer 700 may be increased, thereby reducing the stress applied to the wire neck portion. Therefore, the breakage of the wire 400 is prevented, thereby increasing the life of the wire 400.
  • forming the flexible light guide layer 700 on the vertical light emitting device 200 is not necessarily applied to the vertical light emitting device, but a light emitting device in which the light guide layer is formed has a different shape than the vertical light emitting device. It can be applied to a light emitting device. That is, by adding a resin of low hardness, the stress applied to the wire bonded to the upper electrode of the light emitting element can be alleviated.
  • the light emitting device package may include a substrate including at least one power supply lead, a light emitting device disposed on the substrate and at least one electrode connected to the at least one power supply lead through a wire, and It may include a light guide layer disposed on the light emitting device to guide the light from the light emitting device, and comprises a low hardness resin.

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Abstract

One embodiment relates to a vertical-type light-emitting device package. The vertical-type light-emitting device package, according to one embodiment, comprises: a substrate; a vertical-type light-emitting device disposed on the substrate; a fluorescent substance plate disposed on the vertical-type light-emitting device and having a space formed along at least one side of a lower part thereof; and an adhesive material disposed between the vertical-type light-emitting device and the fluorescent substance plate and in the space of the fluorescent substance plate.

Description

수직형 발광소자 패키지Vertical LED Package
실시 형태는 수직형 발광소자 패키지에 관한 것이다.An embodiment relates to a vertical light emitting device package.
일반적으로 램프는 특정한 목적을 위하여 빛을 공급하거나 조절하는 장치를 말한다. 램프의 광원으로는 백열 전구, 형광등, 네온등과 같은 것이 사용될 수 있으며, 최근에는 LED(Light Emitting Diode)가 사용되고 있다.Generally a lamp is a device that supplies or regulates light for a specific purpose. As a light source of a lamp, an incandescent bulb, a fluorescent lamp, a neon lamp, or the like may be used. Recently, a light emitting diode (LED) has been used.
LED는 화합물 반도체 특성을 이용하여 전기 신호를 적외선 또는 빛으로 변화시키는 소자로서, 형광등과 달리 수은 등의 유해 물질을 사용하지 않아 환경 오염 유발 원인이 적다. 또한, LED는 백열 전구, 형광등, 네온등 보다 수명이 더 길고 소비전력이 적다. 또한, LED는 높은 색온도로 인하여 시인성이 우수하고 눈부심이 적은 장점이 있을 수 있다.LED is a device that changes the electric signal to infrared or light by using the compound semiconductor characteristics, unlike fluorescent lamps do not use harmful substances such as mercury, so there is little cause of environmental pollution. In addition, LEDs have a longer life and consume less power than incandescent, fluorescent, and neon lights. In addition, the LED may have the advantage of excellent visibility and less glare due to the high color temperature.
LED를 이용한 램프 유닛은 상기의 장점에 의해 널리 채용되고 있으며, 예를 들어 백라이트(backlight), 표시 장치, 조명등 또는 헤드 램프(head lamp) 등에 사용되고 있다.Lamp units using LEDs are widely adopted by the above advantages, and are used, for example, in backlights, display devices, lighting lamps, or head lamps.
LED를 이용한 램프 유닛은 시인성이 우수하고 눈부심이 적은 장점에 의해 차량용 램프에 사용되기 적합하다. 왜냐하면, 차량은 램프 유닛의 발광을 이용하여 차량을 인식 또는 차량의 운행상태를 외부에서 알 수 있어 램프 유닛의 시인성이 우수하고 눈부심이 적으면 인접한 다른 차량의 운전자 또는 보행자가 차량의 인식 또는 차량의 운행상태를 명확하게 식별할 수 있기 때문이다. Lamp units using LEDs are suitable for use in vehicle lamps due to their excellent visibility and low glare. Because the vehicle can recognize the vehicle or the driving state of the vehicle from the outside by using the light emission of the lamp unit, if the visibility of the lamp unit is excellent and the glare is small, the driver or the pedestrian of another adjacent vehicle can recognize the vehicle or This is because the driving state can be clearly identified.
이러한, 차량용 램프의 LED는 일반적으로 플립(flip)형이거나, 수직(vertical)형 타입이다. 플립형 발광소자는 와이어 본딩(wire bonding)을 하지 않고 발광소자위에 범프(bump)를 형성한 뒤 그 범프를 실장기판에 접촉시켜 칩과 기판의 회로를 연결한 칩을 말한다. 플립형 발광소자는 패키지의 크기가 발광소자 크기와 같아 소형, 경량화에 유리하나 수직형 발광소자에 비하여 발광 효율이 좋지 않다. 한편, 수직형 발광소자는 고출력용으로 적합한 구조를 가지고 있으며 열 방출 특성도 좋으나, 아직은 양산 수율이 높지 않으며, 특히 발광소자에 플레이트를 접착할 때 사용하는 접착재로 인하여 전극이 오염되는 문제점이 있었다.Such LEDs of a vehicle lamp are generally of the flip type or of the vertical type. The flip type light emitting device refers to a chip in which a bump is formed on the light emitting device without wire bonding and then the bump is contacted with the mounting substrate to connect the chip and the circuit of the substrate. The flip type light emitting device is advantageous in size and weight because the package size is the same as the size of the light emitting device, but the light emitting efficiency is not as good as that of the vertical light emitting device. On the other hand, the vertical light emitting device has a structure suitable for high output and good heat dissipation characteristics, but the yield is not high yet, in particular, there is a problem that the electrode is contaminated due to the adhesive used to adhere the plate to the light emitting device.
실시 형태는 전류의 집중을 완화하여 신뢰성이 향상되고 발광 얼룩짐이 저감된 수직형 발광소자 패키지를 제공한다.Embodiments provide a vertical light emitting device package in which the concentration of current is relaxed to improve reliability and reduce light emission unevenness.
또한, 실시 형태는 열저항성이 적고, 광속유지율이 향상된 수직형 발광소자 패키지를 제공한다.In addition, the embodiment provides a vertical light emitting device package having low thermal resistance and improved luminous flux maintenance.
또한, 실시 형태는 색분포가 균일한 수직형 발광소자 패키지를 제공한다.In addition, the embodiment provides a vertical light emitting device package with uniform color distribution.
또한, 실시 형태는 접착재에 의한 발광소자의 오염을 방지할 수 있는 수직형 발광소자 패키지를 제공한다.In addition, the embodiment provides a vertical light emitting device package capable of preventing contamination of the light emitting device by the adhesive material.
또한, 수지 봉지성 및 와이어 본딩을 보호할 수 있는 수직형 발광소파 패키지를 제공한다.In addition, the present invention provides a vertical light emitting package capable of protecting resin encapsulation and wire bonding.
또한, 실시 형태는 광손실이 적고, 와이어 넥(neck)부에 인가되는 응력을 완화할 수 있는 수직형 발광소자 패키지를 제공한다.In addition, the embodiment provides a vertical light emitting device package with low light loss and capable of alleviating stress applied to a wire neck portion.
실시 형태에 따른 수직형 발광소자 패키지는, 기판; 상기 기판 상에 배치되는 수직형 발광소자; 상기 수직형 발광소자 상에 배치되고, 저부의 적어도 하나 이상의 변을 따라 형성된 공간을 갖는, 형광체 플레이트; 및 상기 수직형 발광 소자와 상기 형광체 플레이트 사이에 배치되고, 상기 형광체 플레이트의 공간에 배치된 접착재;를 포함한다.In one embodiment, a vertical light emitting device package includes a substrate; A vertical light emitting device disposed on the substrate; A phosphor plate disposed on the vertical light emitting device and having a space formed along at least one side of a bottom portion thereof; And an adhesive disposed between the vertical light emitting device and the phosphor plate and disposed in a space of the phosphor plate.
여기서, 상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 오목진 홈일 수 있다.Here, the space may be a recessed groove along the side of the bottom of the phosphor plate.
여기서, 상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 그 단면이 정방형일 수 있다.Here, the space may have a square cross section along the side of the bottom of the phosphor plate.
여기서, 상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 그 단면이 원호상으로 오목진 홈일 수 있다.Here, the space may be a groove in which a cross section is concave in an arc shape along the side of the bottom of the phosphor plate.
여기서, 상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 그 단면이 직각삼각형일 수 있다.Here, the space may have a right triangle along a side of the bottom of the phosphor plate.
여기서, 상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라 소정의 간격을 두고 복수 개로 형성될 수 있다.Here, the space may be formed in plural, with a predetermined interval along the side of the bottom of the phosphor plate.
여기서, 상기 공간은, 상기 저부의 테두리를 따라 소정의 폭을 갖고 형성될 수 있다.Here, the space may be formed with a predetermined width along the edge of the bottom portion.
여기서, 상기 형광체 플레이트의 저부면은 상기 수직형 발광소자의 상부면보다 면적이 좁고, 상기 수직형 발광소자의 발광부보다 면적이 넓을 수 있다.Here, the bottom surface of the phosphor plate may have a smaller area than the top surface of the vertical light emitting device, and may have a larger area than the light emitting part of the vertical light emitting device.
여기서, 상기 형광체 플레이트는 형광체를 함유한 유리 플레이트일 수 있다.Here, the phosphor plate may be a glass plate containing phosphor.
여기서, 상기 기판은 서로 전기적으로 분리된 제1 전원공급리드와 제2 전원공급리드를 포함하고, 상기 수직형 발광소자는, 상부에 형성되고 상기 제1 전원공급리드와 한 쌍의 와이어를 통하여 각각 연결되는 한 쌍의 제1 전극, 및 하부에 형성되고 상기 제2 전원공급리드와 직접 연결되는 제2 전극을 포함할 수 있다.Herein, the substrate includes a first power supply lead and a second power supply lead electrically separated from each other, and the vertical light emitting device is formed on an upper portion of each of the first power supply lead and a pair of wires. A pair of first electrodes connected to each other, and a second electrode formed on the lower portion and directly connected to the second power supply lead.
여기서, 상기 형광체 플레이트의 표면에는 대전방지처리층이 배치될 수 있다.Here, an antistatic treatment layer may be disposed on the surface of the phosphor plate.
실시 형태에 따른 수직형 발광소자 패키지는 전류의 집중을 완화하여 신뢰성이 향상되고 발광 얼룩짐이 저감시킬 수 있다.The vertical light emitting device package according to the embodiment can improve the reliability and reduce the light emission unevenness by relaxing the concentration of the current.
또한, 열저항성이 적고, 광속유지율이 향상될 수 있다.In addition, the thermal resistance is low, and the luminous flux maintenance rate can be improved.
또한, 색분포가 균일해질 수 있다.In addition, the color distribution may be uniform.
또한, 접착재에 의한 발광소자의 오염을 방지할 수 있다.In addition, it is possible to prevent contamination of the light emitting device by the adhesive material.
또한, 수지 봉지성 및 와이어 본딩을 보호할 수 있다.In addition, resin encapsulation and wire bonding can be protected.
또한, 광손실이 적고, 와이어 넥(neck)부에 인가되는 응력을 완화할 수 있다.In addition, the optical loss is small, and the stress applied to the wire neck portion can be alleviated.
도 1은 제1 실시 형태에 따른 수직형 발광소자 패키지의 사시도이다.1 is a perspective view of a vertical light emitting device package according to the first embodiment.
도 2는 도 1에 도시된 발광소자 패키지의 발광소자와 형광체 플레이트를 분리시킨 사시도이다.FIG. 2 is a perspective view of a light emitting device and a phosphor plate of the light emitting device package shown in FIG. 1.
도 3은 더블 와이어 수직형 발광소자, 싱글 와이어 수직형 발광소자, 플립형 발광소자의 외관 및 휘도분포도를 나타내는 표이다.3 is a table showing the appearance and luminance distribution of the double wire vertical light emitting device, the single wire vertical light emitting device, and the flip type light emitting device.
도 4a 및 도 4b는 도 1에 도시된 수직형 발광소자 패키지의 측면도 및 평면도이다.4A and 4B are side and plan views of the vertical light emitting device package shown in FIG. 1.
도 5a는 도 1에 도시된 수직형 발광소자 패키지의 형광체 플레이트의 저면사시도이고, 도 5b 내지 도 5e는 접착재를 수용할 수 있는 인입공간의 다양한 실시 형태를 도시한 것이다.5A is a bottom perspective view of the phosphor plate of the vertical light emitting device package shown in FIG. 1, and FIGS. 5B to 5E illustrate various embodiments of a drawing space capable of accommodating an adhesive.
도 6a 및 도 6b는 도 5a에 도시된 형광체 플레이트의 측면도 및 평면도이다.6A and 6B are side and top views of the phosphor plate shown in FIG. 5A.
도 7a는 일반적인 조명장치의 구성도이며, 도 7b는 실시 형태에 따른 수직형 발광소자 패키지를 포함하는 조명장치의 구성도이다.7A is a block diagram of a general lighting device, and FIG. 7B is a block diagram of a lighting device including a vertical light emitting device package according to an embodiment.
도 8은 수지형 형광체를 포함하는 수직형 발광소자 패키지의 시험전 시험후의 상태를 나타내는 평면도이다.8 is a plan view showing a state after the test before the test of the vertical light emitting device package including the resin-type phosphor.
도 9a 및 도 9b는 제2 실시 형태에 따른 수직형 발광소자 패키지의 사시도 및 측면도이다.9A and 9B are a perspective view and a side view of a vertical light emitting device package according to the second embodiment.
도 10a 일반적인 일반적인 차량용 램프에 사용되는 수직형 발광소자 패키지의 사시도이며, 도 10b 및 도 10c는 도 10a의 수직형 발광소자 패키지의 평면도이다.10A is a perspective view of a vertical light emitting device package used in a general general vehicle lamp, and FIGS. 10B and 10C are plan views of the vertical light emitting device package of FIG. 10A.
도 11a는 조명장치에 이용되는 제3 실시 형태에 따른 수직형 발광소자 패키지를 사시도이며, 도 11b 및 도 11c는 도 11a의 수직형 발광소자 패키지의 평면도이다.FIG. 11A is a perspective view of a vertical light emitting device package according to a third embodiment used for an illumination device, and FIGS. 11B and 11C are plan views of the vertical light emitting device package of FIG. 11A.
도 12a는 조명장치에 이용되는 제4 실시 형태에 따른 수직형 발광소자 패키지의 사시도이며, 도 12b 및 도 12c는 도 11a의 수직형 발광소자 패키지의 평면도 및 측면도이다.12A is a perspective view of a vertical light emitting device package according to a fourth embodiment used for an illumination device, and FIGS. 12B and 12C are plan and side views of the vertical light emitting device package of FIG. 11A.
도면에서 각층의 두께나 크기는 설명의 편의 및 명확성을 위하여 과장되거나 생략되거나 또는 개략적으로 도시되었다. 또한 각 구성요소의 크기는 실제크기를 전적으로 반영하는 것은 아니다.In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.
본 발명에 따른 실시 형태의 설명에 있어서, 어느 한 element가 다른 element의 ‘상(위) 또는 하(아래)(on or under)’에 형성되는 것으로 기재되는 경우에 있어, 상(위) 또는 하(아래)(on or under)는 두 개의 element가 서로 직접(directly)접촉되거나 하나 이상의 다른 element가 상기 두 element사이에 배치되어(indirectly) 형성되는 것을 모두 포함한다. 또한 ‘상(위) 또는 하(아래)(on or under)’으로 표현되는 경우 하나의 element를 기준으로 위쪽 방향뿐만 아니라 아래쪽 방향의 의미도 포함할 수 있다.In the description of the embodiment according to the present invention, when one element is described as being formed 'on or under' of another element, it is either upper or lower. (On or under) includes both two elements are directly in contact with each other (directly) or one or more other elements are formed indirectly between the two elements (indirectly). In addition, when expressed as 'on or under', it may include the meaning of the downward direction as well as the upward direction based on one element.
이하 첨부된 도면을 참조하여 실시 형태에 따른 수직형 발광소자 패키지를 설명한다.Hereinafter, a vertical light emitting device package according to an embodiment will be described with reference to the accompanying drawings.
<제1 실시 형태><1st embodiment>
도 1은 제1 실시 형태에 따른 수직형 발광소자 패키지의 사시도이고, 도 2는 도 1에 도시된 수직형 발광소자 패키지의 발광소자와 형광체가 분리된 분리 사시도이다.1 is a perspective view of a vertical light emitting device package according to a first embodiment, and FIG. 2 is an exploded perspective view of a light emitting device and a phosphor separated from the vertical light emitting device package shown in FIG. 1.
도 1 및 도 2를 참조하면, 제1 실시 형태에 따른 수직형 발광소자 패키지(10)는, 기판(100), 수직형 발광소자(200), 및 형광체 플레이트(300)를 포함할 수 있다.1 and 2, the vertical light emitting device package 10 according to the first embodiment may include a substrate 100, a vertical light emitting device 200, and a phosphor plate 300.
도 1 및 도 2에 도시된 바와 같이, 기판(100) 상에는 적어도 하나의 수직형 발광소자(200)가 배치될 수 있다. 형광체 플레이트(300)는 발광소자(200) 상에 접착재(500)에 의하여 부착될 수 있다.As illustrated in FIGS. 1 and 2, at least one vertical light emitting device 200 may be disposed on the substrate 100. The phosphor plate 300 may be attached to the light emitting device 200 by the adhesive material 500.
기판(100)은 발광소자 패키지(10)의 몸체 역할을 하는 것으로서 PCB (Printed Circuit Board), 실리콘 웨이퍼, 수지와 같은 다양한 것이 될 수 있다. 또한, 기판(100)으로 사용된 소재에 따라 플라스틱 패키지, 세라믹 패키지, 금속 패키지 등으로 분류되기도 한다. The substrate 100 serves as a body of the light emitting device package 10 and may be various kinds such as a printed circuit board (PCB), a silicon wafer, and a resin. In addition, depending on the material used as the substrate 100 may be classified into a plastic package, a ceramic package, a metal package.
기판(100) 위에는 절연층(미도시)이 배치될 수 있다. 절연층은 기판(100)과 다른 구성요소 사이의 전기적 연결을 차단하는 역할을 한다. 다만, 기판(100)이 비전도성 물질로 이루어져 있는 경우에는 절연층을 배치하지 않아도 무방하다.An insulating layer (not shown) may be disposed on the substrate 100. The insulating layer serves to block electrical connections between the substrate 100 and other components. However, when the substrate 100 is made of a nonconductive material, the insulating layer may not be disposed.
기판(100) 위에는 제1 전원공급리드(110) 및 제2 전원공급리드(120)가 배치될 수 있다. 제1 전원공급리드(110) 및 제2 전원공급리드(120)는 서로 전기적으로 분리되며 수직형 발광소자(200)와 각각 전기적으로 연결된다. 수직형 발광소자(200)가 적어도 한 개 이상이므로, 제1 전원공급리드(110) 및 제2 전원공급리드(120)도 각각의 수직형 발광소자(200)가 연결되도록 하나 이상으로 형성될 수 있다.The first power supply lead 110 and the second power supply lead 120 may be disposed on the substrate 100. The first power supply lead 110 and the second power supply lead 120 are electrically separated from each other and electrically connected to the vertical light emitting device 200, respectively. Since at least one vertical light emitting device 200 is present, the first power supply lead 110 and the second power supply lead 120 may also be formed in one or more so that each vertical light emitting device 200 is connected. have.
적어도 하나 이상의 수직형 발광소자(200)는 기판(100) 위에 배치될 수 있다. 수직형 발광소자(200)는 발광 다이오드(LED)일 수 있으나 이에 한정되는 것은 아니다. 발광 다이오드는 적색, 녹색, 청색 또는 백색의 빛을 각각 발광하는 적색, 녹색, 청색 또는 백색 발광 다이오드일 수 있으나, 그 종류에 한정되지는 않는다.At least one vertical light emitting device 200 may be disposed on the substrate 100. The vertical light emitting device 200 may be a light emitting diode (LED), but is not limited thereto. The light emitting diode may be a red, green, blue, or white light emitting diode emitting red, green, blue, or white light, respectively, but is not limited thereto.
발광 다이오드는 전기 에너지를 빛으로 변환시키는 고체 소자의 일종으로서, 일반적으로 2개의 상반된 도핑층 사이에 개재된 반도체 재료의 활성층을 포함한다. 2개의 도핑층 양단에 바이어스가 인가되면, 정공과 전자가 활성층으로 주입된 후 그 곳에서 재결합되어 빛이 발생되며, 활성층에서 발생된 빛은 모든 방향 또는 특정 방향으로 방출되어 노출 표면을 통해 발광 다이오드 밖으로 방출되게 된다.Light emitting diodes are a type of solid state device that converts electrical energy into light and generally comprise an active layer of semiconductor material sandwiched between two opposing doped layers. When a bias is applied across the two doped layers, holes and electrons are injected into the active layer and then recombined therein to generate light, and the light generated in the active layer is emitted in all directions or in specific directions to emit light through the exposed surface. Will be released out.
수직형 발광소자(200)는 상부 전극(210) 및 하부 전극(미도시)을 구비할 수 있다. 수직형 발광소자(200)의 상부전극(210)은 제1 전원공급리드(110)에 연결되고, 하부 전극(미도시)은 제2 전원공급리드(120)에 연결될 수 있다. 이와 반대로, 도면에는 나타나 있지 않았지만, 상부전극(210)이 제2 전원공급리드(120)에 연결되고, 하부 전극(미도시)이 제1 전원공급리드(120)에 연결될 수 있다.The vertical light emitting device 200 may include an upper electrode 210 and a lower electrode (not shown). The upper electrode 210 of the vertical light emitting device 200 may be connected to the first power supply lead 110, and the lower electrode (not shown) may be connected to the second power supply lead 120. On the contrary, although not shown in the drawing, the upper electrode 210 may be connected to the second power supply lead 120, and the lower electrode (not shown) may be connected to the first power supply lead 120.
수직형 발광소자(200)의 상부 전극(210)은 제1 전원공급리드(110)에 와이어(400)로 연결되고, 하부 전극(미도시)은 제2 전원공급리드(120)에 직접 연결될 수 있다. The upper electrode 210 of the vertical light emitting device 200 may be connected to the first power supply lead 110 by a wire 400, and the lower electrode (not shown) may be directly connected to the second power supply lead 120. have.
제1 실시 형태에 따른 수직형 발광소자 패키지(10)의 수직형 발광소자(200)는, 두 개의 상부 전극(210a, 210b)이 제1 전원공급리드(110)와 두 개의 와이어(400a, 400b)로 연결되는 더블 와이어 수직형 발광소자일 수 있다. 더블 와이어 수직형 발광소자를 이용하면 싱글 와이어 수직형 발광소자나 플립형 발광소자보다 전류가 집중되는 것을 방지할 수 있다. 이로써, 신뢰성이 향상되고 발광에 의한 얼룩짐을 저감시킬 수 있는 효과가 있다.In the vertical light emitting device 200 of the vertical light emitting device package 10 according to the first embodiment, two upper electrodes 210a and 210b may include a first power supply lead 110 and two wires 400a and 400b. It may be a double wire vertical light emitting device connected to). By using the double wire vertical light emitting device, it is possible to prevent current from being concentrated than the single wire vertical light emitting device or the flip type light emitting device. This improves the reliability and has the effect of reducing unevenness caused by light emission.
더블 와이어 수직형 발광소자와 싱글 와이어 수직형 발광소자, 플립형 발광소자에 대하여 구체적으로 살펴보도록 한다. 표 1 및 도 3은 플립형 발광소자, 싱글 와이어 수직형 발광소자, 더블 와이어 수직형 발광소자를 대비하여 보여준다.The double wire vertical light emitting device, the single wire vertical light emitting device, and the flip type light emitting device will be described in detail. Table 1 and Figure 3 shows a flip-type light emitting device, a single wire vertical light emitting device, a double wire vertical light emitting device.
표 1
수직형 발광소자(더블 와이어) 수직형 발광소자(싱글 와이어) 플립형 발광소자
플레이트 장착 X O
저항성 O O X
전류확산 O X O
Table 1
Vertical light emitting device (double wire) Vertical light emitting device (single wire) Flip type light emitting element
Plate mounting X O
Resistance O O X
Current diffusion O X O
표 1 및 도 3을 보면 알 수 있듯이, 더블 와이어 수직형 발광소자는 싱글 와이어 수직형 발광소자 및 플립형 발광소자보다 휘도분포가 발광소자 전체에 고르게 분포되는 것을 알 수 있다. 따라서, 발광의 신뢰성이 높아지고 색편차가 줄어드는 장점이 있다. 또한, 더블 와이어 수직형 발광소자는 방열성, 발광효율이 우수하고, 열저항성이 좋은 효과가 있다. 예를 들면, 플립형 발광소자의 열저항은 2.3℃/W이나, 수직형 발광소자(200)의 열저항은 1.5℃/W이다. 따라서, 수직형 발광소자(200)는 플립형 발광소자에 비하여 신뢰성이 향상되는 효과가 있다.As can be seen from Table 1 and Figure 3, the double-wire vertical light emitting device can be seen that the luminance distribution is evenly distributed throughout the light emitting device than the single-wire vertical light emitting device and flip-type light emitting device. Therefore, there is an advantage that the light emission reliability is increased and the color deviation is reduced. In addition, the double-wire vertical light emitting device has excellent heat dissipation, light emission efficiency, and good heat resistance. For example, the thermal resistance of the flip type light emitting device is 2.3 ° C./W, whereas the thermal resistance of the vertical type light emitting device 200 is 1.5 ° C./W. Therefore, the vertical light emitting device 200 has an effect of improving reliability compared to the flip light emitting device.
도 1 및 도 2에 도시된 바와 같이, 수직형 발광소자(200)의 상부 전극(210)은 제1 전원공급리드(110)와 와이어(400)로 연결될 수 있다. 즉, 상부 전극(210)은 두 개의 전극(210a, 210b)을 포함하고, 제1 전원공급리드(110)와 두 개의 와이어(400a, 400b)로 연결될 수 있다.As illustrated in FIGS. 1 and 2, the upper electrode 210 of the vertical light emitting device 200 may be connected to the first power supply lead 110 and the wire 400. That is, the upper electrode 210 may include two electrodes 210a and 210b and may be connected to the first power supply lead 110 and two wires 400a and 400b.
형광체 플레이트(300)는 수직형 발광소자(200)의 활성층에서 발생한 빛을 분산시키는 형광체를 함유한 플레이트로서, 수직형 발광소자(200)의 상부에 배치된다. 형광체 플레이트(300)의 하부에 접착재(500)가 도포되고, 형광체 플레이트(300)는 접착재(500)에 의하여 수직형 발광소자(200)의 상부에 배치된다. The phosphor plate 300 is a plate containing a phosphor for dispersing light generated in the active layer of the vertical light emitting device 200, and is disposed above the vertical light emitting device 200. The adhesive 500 is applied to the lower portion of the phosphor plate 300, and the phosphor plate 300 is disposed on the vertical light emitting device 200 by the adhesive 500.
도 1 및 도 2에 도시된 바와 같이, 형광체 플레이트(300)는 수직형 발광소자(200)의 상부 중 두 개의 상부 전극(210a, 210b)을 제외한 나머지 부분을 덮도록 배치될 수 있다. 수직형 발광소자(200)의 두 개의 상부 전극(210a, 210b)은 제1 전원공급리드(110)와 가까운 모서리에 형성될 수 있다. 두 개의 상부 전극(210a, 210b)이 제1 전원공급리드(110)와 가까운 모서리에 형성되면 제1 전원공급리드(110)를 연결하는 와이어의 길이를 줄일 수 있는 효과가 있다. 형광체 플레이트(300)의 모서리 중 제1 전원공급리드(110)와 가까운 두 모서리는 상부 전극(210a, 210b)을 덮지 않도록 형성될 수 있다.As illustrated in FIGS. 1 and 2, the phosphor plate 300 may be disposed to cover the remaining portions except for the two upper electrodes 210a and 210b of the upper portion of the vertical light emitting device 200. Two upper electrodes 210a and 210b of the vertical light emitting device 200 may be formed at corners close to the first power supply lead 110. When the two upper electrodes 210a and 210b are formed at edges close to the first power supply lead 110, the length of the wire connecting the first power supply lead 110 may be reduced. Two corners close to the first power supply lead 110 among the corners of the phosphor plate 300 may be formed so as not to cover the upper electrodes 210a and 210b.
도 4a 및 도 4b는 제1 실시 형태에 따른 수직형 발광소자(200)와 형광체 플레이트(300)의 규격을 나타내는 측면도 및 평면도이다.4A and 4B are a side view and a plan view showing the standards of the vertical light emitting device 200 and the phosphor plate 300 according to the first embodiment.
도 4a 및 도 4b를 참조하면, 수직형 발광소자(200)의 가로 및 세로 크기를 각각 1이라고 할 때, 수직형 발광소자(200)의 높이는 0.12이고, 형광체 플레이트(300)의 높이는 0.2일 수 있다. 또한, 발광소자(200)는 정사각형 형상일 수 있으며, 형광체 플레이트(300)는 기본적으로 가로 및 세로가 0.98인 정사각형 형상이나, 상부 전극(210a, 210b)을 덮지 않도록 두 모서리가 형광체 플레이트(300)의 중심을 향하여 오목진 오목부(320a, 320b)가 형성될 수 있다. 또한, 수직형 발광소자(200)에서 실질적으로 빛이 방출되는 발광부(240)도 기본적으로 가로 및 세로가 0.935인 정사각형에서 두 모서리가 발광부(240)의 중심을 향하여 오목지게 형성될 수 있다.4A and 4B, when the horizontal and vertical sizes of the vertical light emitting device 200 are 1, respectively, the height of the vertical light emitting device 200 is 0.12 and the height of the phosphor plate 300 may be 0.2. have. In addition, the light emitting device 200 may have a square shape, and the phosphor plate 300 may basically have a square shape having a width and length of 0.98, but two edges thereof may not cover the upper electrodes 210a and 210b. Concave recesses 320a and 320b may be formed toward the center of the recess. In addition, the light emitting unit 240 that emits substantially the light from the vertical light emitting device 200 may also be formed to concave toward the center of the light emitting unit 240 at two corners in a square having a vertical width of 0.935. .
도 4a 및 도 4b에 도시된 바와 같이, 발광소자(200), 형광체 플레이트(300) 및 발광부(240)의 사이즈는 발광소자(200) > 형광체 플레이트(300) > 발광부(240) 일 수 있으나, 반드시 전술한 수치로 한정되는 것은 아니다.As shown in FIGS. 4A and 4B, the size of the light emitting device 200, the phosphor plate 300, and the light emitting unit 240 may be the light emitting device 200> the phosphor plate 300> the light emitting unit 240. However, it is not necessarily limited to the above numerical values.
제1 실시 형태와 같이, 수직형 발광소자(200)의 사이즈가 형광체 플레이트(300)의 사이즈보다 크면, 수직형 발광소자(200)가 형광체 플레이트(300)를 안정적으로 지지할 수 있다. 또한, 형광체 플레이트(300)의 사이즈가 발광부(240)의 사이즈보다 크면, 수직형 발광소자(200)의 활성층에서 발생한 빛 전체가 형광체 플레이트(300)를 통하여 방출될 수 있다. 따라서, 제1 실시 형태에 따르면, 전체적인 구조의 안정성을 도모하면서, 색분포의 균일화를 이룰 수 있는 효과가 있다. 따라서, 제1 실시 형태에 따른 발광소자 패키지는 높은 신뢰성을 가지며 색편차가 적다. 또한, 제1 실시 형태에 따른 발광소자 패키지는 열저항성이 적은 LED 광원을 구현할 수 있다.As in the first embodiment, when the size of the vertical light emitting device 200 is larger than the size of the phosphor plate 300, the vertical light emitting device 200 can stably support the phosphor plate 300. In addition, when the size of the phosphor plate 300 is larger than the size of the light emitter 240, the entire light generated in the active layer of the vertical light emitting device 200 may be emitted through the phosphor plate 300. Therefore, according to 1st Embodiment, there exists an effect which can achieve uniformity of color distribution, aiming at stability of the whole structure. Therefore, the light emitting device package according to the first embodiment has high reliability and small color deviation. In addition, the light emitting device package according to the first embodiment may implement an LED light source having low thermal resistance.
다시, 도 1 내지 도 2를 참조하면, 와이어(400)는 제품의 신뢰성, 생산성, 원가, 성능 등을 고려하여 선택될 수 있다. 와이어(400)의 소재로는 금(Au), 은(Ag), 구리(Cu), 알루미늄(Al) 등의 금속이 사용될 수 있다.Again, referring to FIGS. 1 and 2, the wire 400 may be selected in consideration of product reliability, productivity, cost, performance, and the like. The material of the wire 400 may be a metal such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), or the like.
접착재(500)는 내열, 내광성의 재료를 사용할 수 있다. 예를 들면, 실리콘(silicon), 불소 수지, 무기(유리) 페이스트(paste) 일 수 있다. The adhesive material 500 may use a heat resistant and light resistant material. For example, it may be silicon, a fluororesin, and an inorganic (glass) paste.
접착재(500)가 내열, 내광성이 높아지면 발광소자 패키지의 신뢰성이 향상되므로, 광속유지율을 향상시킬 수 있는 효과가 있다.When the adhesive 500 is heat resistant and light resistant, the reliability of the light emitting device package may be improved, and thus the luminous flux maintenance rate may be improved.
접착재(500)에 의하여 형광체 플레이트(300)가 수직형 발광소자(200)에 접착되는 것에 의하여, 형광체 플레이트(300)는 형광체 플레이트(300)와 수직형 발광소자(200) 사이의 틈으로 빛이 새는 것을 방지할 수 있다. 형광체 플레이트(300)가 수직형 발광소자(200)에 접착되는 것에 의하여, 형광체 플레이트(300)는 수직형 발광소자(200)의 빛을 안정적으로 도광할 수 있다.When the phosphor plate 300 is bonded to the vertical light emitting device 200 by the adhesive 500, the phosphor plate 300 is lighted by a gap between the phosphor plate 300 and the vertical light emitting device 200. Can prevent leakage. When the phosphor plate 300 is adhered to the vertical light emitting device 200, the phosphor plate 300 may stably guide the light of the vertical light emitting device 200.
도 5a는 제1 실시 형태에 따른 형광체 플레이트(300)의 저면 사시도이고, 도 6a 및 도 6b는 형광체 플레이트(300)의 측면도 및 평면도이다.5A is a bottom perspective view of the phosphor plate 300 according to the first embodiment, and FIGS. 6A and 6B are side views and a plan view of the phosphor plate 300.
도 5a, 도 6a 및 도 6b를 참조하면, 형광체 플레이트(300)는 형광체 플레이트(300)의 적어도 하나 이상의 변을 따라 형성된 공간(310)을 가질 수 있다. 상기 공간(310)에는 형광체 플레이트(300)가 접착재(500)에 의하여 도포될 때, 접착재(500)가 인입될 수 있다. 도 5a에 도시된 실시 형태에 의하면, 접착재(500)가 도포되는 형광체 플레이트(300)의 접착면에 접착재의 인입공간으로서의 홈(310)이 가공된다. 홈(310)은 형광체 플레이트(300)의 저부의 적어도 하나 이상의 변을 따라 오목지게 형성된다. 홈(310)에는 접착재(500)가 수용될 수 있다. 제1 실시 형태에 따른 형광체 플레이트(300)의 인입공간(310)은 도 5a에 도시된 홈(310)의 형태에 국한되지 않고 접착재(500)를 수용할 수 있는 공간을 형성할 수 있는 다양한 형태의 구조를 포함한다. 5A, 6A, and 6B, the phosphor plate 300 may have a space 310 formed along at least one side of the phosphor plate 300. When the phosphor plate 300 is applied by the adhesive 500, the adhesive 500 may be introduced into the space 310. According to the embodiment shown in FIG. 5A, the groove 310 serving as an insertion space of the adhesive material is processed on the adhesive surface of the phosphor plate 300 to which the adhesive material 500 is applied. The groove 310 is formed to be concave along at least one or more sides of the bottom of the phosphor plate 300. The adhesive material 500 may be accommodated in the groove 310. The drawing space 310 of the phosphor plate 300 according to the first embodiment is not limited to the shape of the groove 310 shown in FIG. 5A, and may have various shapes that may form a space for accommodating the adhesive material 500. It includes the structure of.
구체적으로, 도 5b 내지 도 5e는 접착재를 수용할 수 있는 인입공간의 다양한 실시 형태들(300’, 300’’, 300’’’, 300’’’’)를 도시한 것이다. 도 5b에 도시된 바에 따르면, 인입공간(310’)의 단면은 정방형 형상을 가진다. 단면이 정방형이므로 면적대비 접착재의 수용효율이 높다. 도 5c에 도시된 바에 따르면, 인입공간(310’’)은 단면이 원호형 형상을 가진다. 단면이 원호형이므로 각진 부분이 없어 크랙이 발생할 우려가 적다. 도 5d에 도시된 바에 따르면, 인입공간(310’’’)은 칼로 자르듯 단면이 경사진 직선의 형상을 가진다. 즉, 단면이 직각삼각형의 형상을 가진다. 인입공간(310’’’)의 단면이 직선이므로 가공이 용이하다. 도 5e에 도시된 바에 따르면, 인입공간(310’’’’)은 형광체 플레이트(300’’’’)의 저부의 적어도 하나 이상의 변에 일정한 또는 일정하지 않은 간격을 두고 복수 개가 형성될 수 있다. 인입공간이 저부의 적어도 하나 이상의 변에 전체적으로 형성되지 않기 때문에, 인입공간(310’’’’)의 형성으로 인한 효율저하와 접착재 수용의 효과를 상충하는 설계가 가능하다.Specifically, FIGS. 5B to 5E illustrate various embodiments 300 ', 300', 300 ', 300' and 300 'of an entrance space capable of accommodating an adhesive. As shown in FIG. 5B, the cross section of the retraction space 310 ′ has a square shape. Since the cross section is square, the storage efficiency of adhesive material is high. As shown in FIG. 5C, the inlet space 310 ′ ′ has an arc shape in cross section. Since the cross section is arc-shaped, there is no risk of cracking because there is no angled portion. As shown in FIG. 5D, the inlet space 310 ′ ′ ′ has a straight line shape inclined in cross section, such as by cutting with a knife. That is, the cross section has the shape of a right triangle. Since the cross section of the retraction space 310 '' is straight, processing is easy. As illustrated in FIG. 5E, a plurality of lead spaces 310 ′ ′ ′ ′ ′ may be formed in at least one side of the bottom of the phosphor plate 300 ′ ′ ′ ′ at regular or non-uniform intervals. Since the pulling space is not formed on at least one side of the bottom as a whole, it is possible to design a conflict between the efficiency reduction and the effect of receiving the adhesive due to the formation of the pulling space (310 '' '').
다시, 도 5a, 도 6a 및 도 6b를 참조하면, 인입공간(310)은 형광체 플레이트(300)의 저면의 테두리를 따라 형성될 수 있다. 또한, 인입공간(310)는 소정의 폭을 가지고 형성될 수 있으며, 소정의 폭은 일정한 값일 수 있다. 예를 들면, 수직형 발광소자(200)의 가로 및 세로를 1이라고 할 때, 형광체 플레이트(300)의 높이, 즉 두께는 0.2이고 가로 및 세로가 0.98이며, 인입공간(310)의 높이는 0.02이고 폭은 0.04일 수 있다. 인입공간(310)의 높이가 0.02이고 폭은 0.04일 때 안정적이면서 접착재의 수용에 효율적이다. 예를 들면, 접착재(500)의 두께는 약 0.003mm 내지 0.006mm이므로 접착재(500)가 수용되는 인입공간(310)의 높이는 0.01mm이상이 바람직하다. 인입공간(310)의 폭은 형광체 플레이트(300)를 실장했을 경우에 접착재(500)가 초과하는 양과 대략 같도록 0.04mm일 수 있다. 그러나, 형광체 플레이트(300)와 인입공간(310)의 사이즈는 전술한 수치로 한정되는 것은 아니며, 발광소자(200)의 크기와 접착재(500)의 특성에 따라 달라질 수 있다.5A, 6A, and 6B, the inlet space 310 may be formed along the edge of the bottom surface of the phosphor plate 300. In addition, the retraction space 310 may be formed to have a predetermined width, and the predetermined width may be a constant value. For example, when the width and length of the vertical light emitting device 200 are 1, the height of the phosphor plate 300, that is, the thickness is 0.2, the width and length is 0.98, and the height of the inlet space 310 is 0.02. The width may be 0.04. When the height of the inlet space 310 is 0.02 and the width is 0.04, it is stable and efficient for accommodating the adhesive material. For example, since the thickness of the adhesive 500 is about 0.003 mm to 0.006 mm, the height of the drawing space 310 in which the adhesive 500 is accommodated is preferably 0.01 mm or more. The width of the inlet space 310 may be 0.04 mm so as to be approximately equal to the amount of the adhesive 500 exceeded when the phosphor plate 300 is mounted. However, the size of the phosphor plate 300 and the lead-in space 310 is not limited to the above-described numerical values, but may vary depending on the size of the light emitting device 200 and the characteristics of the adhesive 500.
제1 실시 형태에 따른 인입공간(310)은 접착재(500)를 수용할 수 있도록 형성될 수 있다. 도포된 접착재(500)의 양이 적정량보다 많거나 접착재(500)가 적절하게 도포되지 않은 경우, 도 2에 도시된 상부 전극(210a, 210b)에 와이어(400)를 본딩(bonding)하기 전에, 형광체 플레이트(300)가 수직형 발광소자(200)의 상부에 배치되는 과정에서 접착재(500)가 수직형 발광소자(200)의 상부 전극(210a, 210b)을 오염시킬 수 있다. 인입공간(310)은 적정량보다 초과된 접착재(500) 또는 적절하게 도포되지 않은 접착재(500)를 수용하여 접착재(500)가 형광체 플레이트(300)의 외부로 새는 것을 막을 수 있다. 따라서, 상부 전극(210a, 210b)은 플레이트(300)에 도포된 접착재(500)로부터 보호될 수 있다. 또한, 수직형 발광소자(200)의 상부 전극(210a, 210b)의 오염을 방지하는 것에 의하여, 와이어(400a, 400b) 본딩성능(W/B)이 향상되는 효과가 있다.The drawing space 310 according to the first embodiment may be formed to accommodate the adhesive 500. If the amount of the applied adhesive 500 is greater than an appropriate amount or the adhesive 500 is not properly applied, before bonding the wire 400 to the upper electrodes 210a and 210b shown in FIG. 2, While the phosphor plate 300 is disposed on the vertical light emitting device 200, the adhesive 500 may contaminate the upper electrodes 210a and 210b of the vertical light emitting device 200. The retraction space 310 may accommodate the adhesive 500 exceeding an appropriate amount or the adhesive 500 that is not properly applied to prevent the adhesive 500 from leaking to the outside of the phosphor plate 300. Accordingly, the upper electrodes 210a and 210b may be protected from the adhesive 500 applied to the plate 300. In addition, by preventing contamination of the upper electrodes 210a and 210b of the vertical light emitting device 200, the bonding performance (W / B) of the wires 400a and 400b is improved.
한편, 도 4a 내지 6b에 도시된 바와 같이, 수직형 발광소자(200)의 사이즈, 형광체 플레이트(300)의 사이즈 및 발광부(240)의 사이즈 간에는 발광부(240)의 사이즈 < 형광체 플레이트(300)의 사이즈 < 수직형 발광소자(200)의 사이즈의 관계가 성립할 수 있다. 따라서, 수지의 봉지성이 향상되고, W/B 성능이 보장된다.On the other hand, as shown in Figures 4a to 6b, between the size of the vertical light emitting device 200, the size of the phosphor plate 300 and the size of the light emitting unit 240 the size of the light emitting unit 240 <phosphor plate 300 ) &Lt; size of the vertical light emitting device 200 can be established. Therefore, the sealing property of resin is improved and W / B performance is ensured.
한편, 제1 실시 형태에 따른 형광체 플레이트(300)는 형광체를 함유하는 유리 플레이트일 수 있다. 따라서, 플레이트 내에 형광체가 분산되거나 형광체를 포함하는 봉지재를 이용하지 않고 유리 플레이트(300)가 형광체를 함유하므로 광속유지율이 향상될 수 있다. 따라서, 발광소자 패키지의 신뢰성이 향상되는 효과가 있다.On the other hand, the phosphor plate 300 according to the first embodiment may be a glass plate containing the phosphor. Therefore, since the glass plate 300 contains the phosphor without dispersing the phosphor in the plate or using an encapsulant including the phosphor, the luminous flux maintenance rate can be improved. Therefore, the reliability of the light emitting device package is improved.
도 7a는 일반적인 수직형 발광소자 패키지(1)를 포함하는 조명장치의 간략도이고, 도 7b는 제1 실시 형태에 따른 수직형 발광소자 패키지(10)를 포함하는 조명장치의 간략도이다.FIG. 7A is a schematic view of a lighting device including a general vertical light emitting device package 1, and FIG. 7B is a schematic view of a lighting device including a vertical light emitting device package 10 according to the first embodiment.
도 7a를 참조하면, 조명장치에 사용되는 수직형 발광소자 패키지(1)는 기판(MCPCB) 상에 발광소자 패키지(1)가 배치되고 발광소자 패키지(1)의 상부에 AR(anti glare) 유리가 배치되고, 발광소자 패키지(1) 내부는 형광체를 포함하는 수지)로 채워진다. Referring to FIG. 7A, in the vertical light emitting device package 1 used in the lighting apparatus, a light emitting device package 1 is disposed on a substrate MCPCB, and an AR glass is formed on the light emitting device package 1. Is disposed, and the inside of the light emitting device package 1 is filled with a resin containing a phosphor).
그러나, 도 7b를 참조하면, 제1 실시 형태에 따른 형광체 플레이트(300)는 두께가 80μm 이상일 수 있으며, 투과성이 없는 수지 봉지를 가질 수 있다. 따라서, AR 유리를 사용하지 않아도 되므로 비용을 절감할 수 있으며, 수직형 발광소자(200)와 형광체 플레이트(300)가 밀접하게 접촉하고 있으므로, 청색광의 누출을 방지할 수 있는 효과가 있다.However, referring to FIG. 7B, the phosphor plate 300 according to the first embodiment may have a thickness of 80 μm or more, and may have a resin bag having no permeability. Therefore, since the AR glass does not need to be used, the cost can be reduced, and since the vertical light emitting device 200 and the phosphor plate 300 are in close contact, there is an effect of preventing the leakage of blue light.
추가적으로, 제1 실시 형태에 따른 형광체 플레이트(300)의 표면에는 대전방지처리가 된 대전방지층이 배치될 수 있다. 대전방지처리에 의하여 형광체 플레이트(300)의 표면저항값은 1010 Ω 이하일 수 있다. 참고로, 일반적인 유리의 표면저항값은 1010~1012 Ω 이다. 따라서, 제1 실시 형태에 따른 형광체 플레이트(300)는 먼지 등의 오염물질이 유리면에 부착되는 것을 방지할 수 있다.In addition, an antistatic layer having an antistatic treatment may be disposed on the surface of the phosphor plate 300 according to the first embodiment. The surface resistance of the phosphor plate 300 may be 1010 Ω or less by the antistatic treatment. For reference, the surface resistance of general glass is 1010 to 1012 Ω. Therefore, the phosphor plate 300 according to the first embodiment can prevent contaminants such as dust from adhering to the glass surface.
도 8은 일반적인 발광소자 패키지에 사용된 수지 타입의 형광체층을 나타낸다. 구체적으로, 도 8의 (a)는 소정의 시험 전의 형광체층의 실제 사진이고, 도 8의 (b)는 소정의 시험 후의 형광체층의 실제 사진이다.8 illustrates a resin type phosphor layer used in a general light emitting device package. Specifically, FIG. 8A is an actual photograph of the phosphor layer before the predetermined test, and FIG. 8B is an actual photograph of the phosphor layer after the predetermined test.
주위 온도 Ta=85℃, 접합부의 온도 Tj=150℃, 습도 = 85%, 순방향 전류 If = 1000mA인 시험 조건 하에서 1000시간 동안의 소정의 시험을 거치면, 시험 전(a)의 형광체는 시험 후(b)의 형광체층에서 볼 수 있듯이, 형광체층에 크랙이 발생하는 것을 알 수 있다. 그러나, 제1 실시 형태에 따른 형광체 플레이트(300)는 수지가 아니라, 유리 플레이트이기 때문에, 크랙이 발생하지 않아 신뢰성이 향상되는 효과가 있다.After a predetermined test for 1000 hours under test conditions of ambient temperature Ta = 85 ° C., junction temperature Tj = 150 ° C., humidity = 85%, forward current If = 1000 mA, the phosphor before test (a) was tested after ( As can be seen in the phosphor layer of b), it can be seen that cracks occur in the phosphor layer. However, since the phosphor plate 300 according to the first embodiment is not a resin but a glass plate, cracks do not occur and thus the reliability is improved.
다음으로 제2 실시 형태에 대하여 설명하도록 한다.Next, 2nd Embodiment is described.
<제2 실시 형태><2nd embodiment>
제2 실시 형태에 따른 발광소자 패키지(11)는 기판(100), 수직형 발광소자(200), 및 형광체 플레이트(300)를 포함할 수 있다.The light emitting device package 11 according to the second embodiment may include a substrate 100, a vertical light emitting device 200, and a phosphor plate 300.
기판(100), 수직형 발광소자(200), 및 형광체 플레이트(300)는 제1 실시 형태에서 기술한 바와 같으므로, 자세한 설명은 생략하도록 한다.Since the substrate 100, the vertical light emitting device 200, and the phosphor plate 300 are as described in the first embodiment, detailed description thereof will be omitted.
도 9a 및 도 9b는 제2 실시 형태에 따른 발광소자 패키지(11)의 사시도 및 측면도이다.9A and 9B are a perspective view and a side view of the light emitting device package 11 according to the second embodiment.
도 1, 도 2, 도 9a 및 도 9b를 참조하면, 수직형 발광소자(200)의 상부 전극(210)에는 접착재(500)에 의한 상부 전극(210)의 오염을 방지하는 범프(230)가 배치될 수 있다.1, 2, 9A, and 9B, bumps 230 may be formed on the upper electrodes 210 of the vertical light emitting device 200 to prevent contamination of the upper electrodes 210 by the adhesive 500. Can be deployed.
도 1, 도 2, 도 9a 및 도 9b에 도시된 바와 같이, 수직형 발광소자(200)의 상부에 형성된 두 상부 전극(210a, 210b)에는 범프(230a, 230b)가 배치될 수 있다. 형광체 플레이트(300)의 저면에 도포된 접착재(500)의 양이 적정량보다 많거나 접착재(500)가 적절하게 도포되지 않은 경우, 형광체 플레이트(300)가 수직형 발광소자(200)의 상부에 배치되는 과정에서 접착재(500)가 수직형 발광소자(200)의 상부 전극(210a, 210b)을 오염시킬 수 있다. 범프(230)는 와이어(400)가 연결되는 상부 전극(210)을 에워싸는 것에 의하여, 접착재(500)에 의하여 상부 전극(210)이 오염되는 것을 방지할 수 있다. 범프(230)는 상부 전극(210)의 일부를 에워싸도록 형성될 수 있으며, 접착재(500)에 의한 오염을 완전히 차단하기 위해서 범프(230)는 상부 전극(210) 전체를 에워싸도록 형성될 수도 있다.1, 2, 9A, and 9B, bumps 230a and 230b may be disposed on the two upper electrodes 210a and 210b formed on the vertical light emitting device 200. When the amount of the adhesive 500 applied to the bottom of the phosphor plate 300 is greater than an appropriate amount or the adhesive 500 is not properly applied, the phosphor plate 300 is disposed on the upper portion of the vertical light emitting device 200. In the process, the adhesive 500 may contaminate the upper electrodes 210a and 210b of the vertical light emitting device 200. The bump 230 may surround the upper electrode 210 to which the wire 400 is connected, thereby preventing the upper electrode 210 from being contaminated by the adhesive 500. The bumps 230 may be formed to surround a part of the upper electrode 210, and the bumps 230 may be formed to surround the entire upper electrode 210 to completely block the contamination by the adhesive 500. It may be.
제2 실시 형태에 따른 수직형 발광소자 패키지는 수직형 발광소자(200)에 형광체 플레이트(300)를 부착하기 전에 와이어(400)가 연결되는 수직형 발광소자(200)의 상부 전극(210)에 범프(230)를 형성하여 본딩 부위를 둘러싼다. 따라서, 형광체 플레이트(300)가 수직형 발광소자(200)에 부착되는 과정에서 상부 전극(210)이 접착재(500)에 의하여 오염되는 것이 방지된다. 또한, 수직형 발광소자(200)의 전극의 오염을 방지되므로, 와이어 본딩성능(W/B)이 향상되는 효과가 있다.The vertical light emitting device package according to the second embodiment is connected to the upper electrode 210 of the vertical light emitting device 200 to which the wire 400 is connected before attaching the phosphor plate 300 to the vertical light emitting device 200. A bump 230 is formed to surround the bonding portion. Therefore, the upper electrode 210 is prevented from being contaminated by the adhesive 500 in the process of attaching the phosphor plate 300 to the vertical light emitting device 200. In addition, since the contamination of the electrode of the vertical light emitting device 200 is prevented, there is an effect that the wire bonding performance (W / B) is improved.
범프(230)는 다양한 형상으로 형성될 수 있다. 예를 들면, 범프(230)는 구형이거나 다면체 형상일 수 있다. 예를 들면, 범프는 구형이거나 단면이 정다각형인 정다면체 구조일 수도 있다. 범프는(230)는 범프 도금에 의하여 형성될 수 있으나, 반드시 이에 한정되는 것은 아니다. 범프(230)는 금속으로 이루어질 수 있다. 특히, 범프(230)는 내산화성이 좋은 금으로 형성될 수 있으나, 반드시 이에 한정되는 것은 아니다.The bumps 230 may be formed in various shapes. For example, bump 230 may be spherical or polyhedral. For example, the bumps may be spherical or regular polyhedral structures with regular polygons in cross section. The bump 230 may be formed by bump plating, but is not necessarily limited thereto. The bump 230 may be made of metal. In particular, the bump 230 may be formed of gold having good oxidation resistance, but is not necessarily limited thereto.
다음으로 제1 및 제2 실시 형태에 따른 수직형 발광소자를 포함하는 조명장치인 제3 실시 형태에 대하여 설명하도록 한다.Next, a third embodiment, which is an illumination device including the vertical light emitting device according to the first and second embodiments, will be described.
<제3 실시 형태>Third Embodiment
도 10a 내지 도 10c는 일반적인 차량용 램프에 사용되는 수직형 발광소자 패키지(1)를 나타낸다.10A to 10C illustrate a vertical light emitting device package 1 used in a general vehicle lamp.
도 10a 내지 도 10c에 도시된 바와 같이, 광학설계상 전조등으로 이용되는 차량용 램프의 광출사구의 짧은 변은 1mm, 긴 변은 4~6mm가 적당하며, 차량에 따라 규격이 정해진다. 본 명세서에서는, 광출사구가 짧은 변이 1mm, 긴 변이 5mm인 경우에 대하여 설명하도록 한다. 10A to 10C, the short side of the light exit port of the vehicle lamp used as the headlamp in the optical design is 1mm, the long side is suitable 4 ~ 6mm, the size is determined according to the vehicle. In the present specification, a case where the light exit port has a short side of 1 mm and a long side of 5 mm will be described.
한편, 차량용 램프는 고온에서 구동되기 때문에, 수직형 발광소자 패키지의 무기(無機)재료화, 특히 형광체층이 무기화되고 있으며, 또한 형광체 플레이트의 사이즈가 커지고 있다.On the other hand, since the vehicle lamp is driven at a high temperature, inorganic materialization of the vertical light emitting device package, in particular, the phosphor layer is inorganicized, and the size of the phosphor plate is increasing.
도 10a 내지 도 10c를 참조하면, 일반적인 수직형 발광소자 패키지(1)는 가로 및 세로가 각각 1mm인 정사각형의 발광소자 5개가 일렬로 배열된 형태를 가질 수 있음을 알 수 있다. 즉, 차량용 램프의 광출사구의 사이즈에 맞게 수직형 발광소자 패키지(1)를 실장한 것이다. 그러나, 이 경우에는 발광소자의 상부 전극(2a, 2b)에서는 빛이 방출되지 못한다. 이는 표 1 및 도 3의 더블 와이어 수직형 발광소자의 휘도분포도에서도 알 수 있다. 즉, 일반적인 차량용 램프에 사용되는 수직형 발광소자 패키지(1)는 발광소자에서 발생된 빛이 형광체를 거쳐 방출되는 과정에서 와이어가 연결되는 각 발광소자의 상부 전극(2a, 2b)에서는 빛이 방출되지 못한다. 따라서, 일반적인 차량용 램프에 사용되는 수직형 발광소자 패키지(1)는 광출사구 전체에서 빛이 출사되지 못한다. 또한, 형광체 플레이트의 탑재를 위해 수직형 발광소자의 전극가공 및 정밀 탑재기가 필요하다.10A to 10C, it can be seen that a general vertical light emitting device package 1 may have a shape in which five square light emitting devices each having a width and a length of 1 mm are arranged in a line. That is, the vertical light emitting device package 1 is mounted in accordance with the size of the light exit port of the vehicle lamp. In this case, however, light is not emitted from the upper electrodes 2a and 2b of the light emitting element. This can be seen in the luminance distribution diagram of the double wire vertical light emitting device of Table 1 and FIG. That is, in the vertical light emitting device package 1 used for a general vehicle lamp, light is emitted from the upper electrodes 2a and 2b of each light emitting device to which wires are connected while light generated by the light emitting device is emitted through the phosphor. I can't. Therefore, the vertical light emitting device package 1 used for a general vehicle lamp does not emit light from the entire light exit port. In addition, the electrode processing and the precision mounting device of the vertical light emitting device is required for mounting the phosphor plate.
도 11a 내지 도 11c는 제3 실시 형태에 따른 수직형 발광소자 패키지(10)를 나타낸다.11A to 11C show a vertical light emitting device package 10 according to the third embodiment.
제3 실시 형태에 따른 수직형 발광소자 패키지(10)는 광효율을 높이기 위하여 도 11a 내지 도 11c에 도시된 바와 같이, 도 10a 내지 도 10c에 도시된 발광소자보다 큰 사이즈의 발광소자를 실장할 수 있다. 즉, 제3 실시 형태에 따른 수직형 발광소자 패키지는 4개의 수직형 발광소자가 배열된 형태를 가질 수 있다.The vertical light emitting device package 10 according to the third embodiment may mount a light emitting device having a larger size than the light emitting device shown in FIGS. 10A to 10C, as shown in FIGS. 11A to 11C to increase light efficiency. have. That is, the vertical light emitting device package according to the third embodiment may have a form in which four vertical light emitting devices are arranged.
도 11a 내지 도 11c에 도시된 바와 같이, 수직형 발광소자(200)의 상부가 정사각형으로 형성될 수 있다. 본 발명의 실시 형태에 따른 수직형 발광소자(200) 각각의 상부는 정사각형 형상이며, 상기 광출사구 규격의 장변은 수직형 발광소자(200) 상부의 정사각형의 한 변의 대략 정수배일 수 있다. 또한, 광출사구 규격의 단변은 상기 정사각형의 한 변보다 길 수 있다. 그리고, 수직형 발광소자(200)의 상부에는 형광체 플레이트(300)가 부착된다. 수직형 발광소자(200)의 발광부(240)를 차량용 램프의 광출사구를 통해 빛이 출사되는 제1 발광부(241)와 제1 발광부(241)를 제외한 제2 발광부(242)로 나누면, 제3 실시 형태에 따른 수직형 발광소자 패키지(10)의 형광체 플레이트(300)는 제1 발광부(241)의 상부에만 형성되어도 충분하므로, 전극가공 및 정밀 탑재가 필요없다.11A to 11C, an upper portion of the vertical light emitting device 200 may be formed in a square. An upper portion of each of the vertical light emitting devices 200 according to the embodiment of the present invention may have a square shape, and the long side of the light exiting device specification may be approximately an integer multiple of one side of the square of the upper portion of the vertical light emitting device 200. In addition, the short side of the light exit port specification may be longer than one side of the square. The phosphor plate 300 is attached to the upper portion of the vertical light emitting device 200. The second light emitter 242 except for the first light emitter 241 and the first light emitter 241, through which the light emitter 240 of the vertical light emitting device 200 emits light through the light exit port of the vehicle lamp. In this case, since the phosphor plate 300 of the vertical light emitting device package 10 according to the third embodiment may be formed only on the upper portion of the first light emitting portion 241, the electrode processing and precision mounting are not necessary.
도 11a 내지 도 11c에 도시된 바와 같이, 제2 발광부(242)는 제1 및 제2 상부 전극(210a, 210b) 사이에 배치되고, 제1 발광부(241)는 제2 발광부(242) 및 제1 및 제2 상부 전극(210a, 210b)를 제외한 직사각형 형상일 수 있다. 제3 실시 형태에 따른 차량용 램프의 광출사구는 제1 발광부(241)에 꼭 맞게 형성되므로, 제1 발광부(241) 전 영역에서 나온 빛이 광출사구를 통해 출사되므로, 광효율이 높은 효과가 있다. 또한, 도 10a 내지 도 10c의 수직형 발광소자 패키지(1)는 발광소자가 5개이므로 빛이 방출되지 않는 부분인 발광소자 사이의 간격이 4개이다 그러나, 제3 실시 형태에 따른 수직형 발광소자 패키지(10)는 발광소자가 4개이므로 발광소자 사이의 간격도 4개로 줄어들어 광효율이 더욱 높은 효과가 있다.11A to 11C, the second light emitting unit 242 is disposed between the first and second upper electrodes 210a and 210b, and the first light emitting unit 241 is the second light emitting unit 242. ) And the first and second upper electrodes 210a and 210b may have a rectangular shape. Since the light exit port of the vehicle lamp according to the third embodiment is formed to fit the first light emitting part 241, light emitted from the entire area of the first light emitting part 241 is emitted through the light exit port, so that the light efficiency is high. There is. In addition, since the vertical light emitting device package 1 of FIGS. 10A to 10C has five light emitting devices, there are four intervals between the light emitting devices, which are portions in which light is not emitted. Since the package 10 has four light emitting devices, the spacing between the light emitting devices is also reduced to four, so that the light efficiency is higher.
한편, 도 11a 내지 도 11c는 수직형 발광소자(200)가 정사각형 형상인 실시 형태에 대해서 도시하고 있으나, 반드시 정사각형 형상으로 한정되는 것은 아니다. 즉, 도 11d 및 도 11e에 도시된 바와 같이, 수직형 발광소자(200)는 직사각형 형상일 수 있다. 예를 들면, 도 11d 및 도 11e와 같이 수직형 발광소자(200)는 광출사구의 장변 방향의 변이 긴 직사각형이거나 단변 방향의 변이 긴 직사각형일 수 있다. 이 때, 발광소자의 형상에 따라 발광소자의 개수도 달라질 수 있다. 또한, 도 11f에 도시된 바와 같이, 도 11d의 수직형 발광소자와 도 11e의 수직형 발광소자가 혼합되어 배치될 수도 있다.11A to 11C illustrate an embodiment in which the vertical light emitting device 200 has a square shape, but is not necessarily limited to the square shape. That is, as illustrated in FIGS. 11D and 11E, the vertical light emitting device 200 may have a rectangular shape. For example, as illustrated in FIGS. 11D and 11E, the vertical light emitting device 200 may be a rectangle having a long side in the long side direction of the light exit port or a rectangle having a long side in the short side direction. In this case, the number of light emitting devices may also vary according to the shape of the light emitting devices. In addition, as illustrated in FIG. 11F, the vertical light emitting device of FIG. 11D and the vertical light emitting device of FIG. 11E may be mixed and disposed.
<제 4실시 형태>Fourth Embodiment
도 12a 내지 도 12c는 도 11a 내지 도 11c에 도시된 수직형 발광소자 패키지(10)의 제2 발광부(242) 상부에 도광층(700)이 형성된 수직형 발광소자 패키지(10)를 나타낸다. 도 11a 내지 도 11c에 따른 수직형 발광소자 패키지(10)는 광출사구를 통해 형광체 플레이트(300)의 제1 발광부(241)의 빛이 방출되나, 제2 발광부(242)의 빛은 방출되지 못한다. 12A to 12C illustrate a vertical light emitting device package 10 in which a light guide layer 700 is formed on the second light emitting unit 242 of the vertical light emitting device package 10 shown in FIGS. 11A to 11C. In the vertical light emitting device package 10 according to FIGS. 11A to 11C, the light of the first light emitting part 241 of the phosphor plate 300 is emitted through the light exit port, but the light of the second light emitting part 242 is It cannot be released.
한편, 제4 실시 형태에 따른 수직형 발광소자 패키지(10)는 발광소자(200) 상에 빛을 분산시키는 형광층(300)일 수 있으며, 반드시 플레이트로 한정되는 것은 아니다. On the other hand, the vertical light emitting device package 10 according to the fourth embodiment may be a fluorescent layer 300 for dispersing light on the light emitting device 200, it is not necessarily limited to a plate.
도 12a 내지 도 12c를 참조하면, 제4 실시 형태에 따른 수직형 발광소자 패키지(10)는 제2 발광부(242)의 빛이 광출사구를 통해 출사되도록 도광하는 도광층(700)을 더 포함할 수 있다. 도광층(700)은 제2 발광부(242)의 상부에 배치될 수 있다. 따라서, 제2 발광부(242)에서 방출된 빛도 도광층(700)에 의하여 안정적으로 출사되므로 더욱 광효율이 높아지는 효과가 있다.12A to 12C, the vertical light emitting device package 10 according to the fourth embodiment may further include a light guide layer 700 that guides the light of the second light emitting part 242 through the light exit port. It may include. The light guide layer 700 may be disposed above the second light emitting part 242. Therefore, since the light emitted from the second light emitting part 242 is stably emitted by the light guide layer 700, the light efficiency is further increased.
또한, 도 12a 내지 도 12c에 도시된 바와 같이, 제4 실시 형태에 따른 수직형 발광소자 패키지(10)는, 기판(100) 상에 배치되고, 형광체 플레이트(300)의 측면과 도광층(700) 및 와이어(400)를 둘러싸는 반사 및 와이어 보호층(800)을 더 포함할 수 있다. 반사 및 와이어 보호층(800)은 형광체 플레이트(300) 또는 도광층(700)에서 방출되는 빛의 적어도 일부를 반사하고, 와이어(400)를 보호할 수 있다. 12A to 12C, the vertical light emitting device package 10 according to the fourth embodiment is disposed on the substrate 100, and has a side surface of the phosphor plate 300 and a light guide layer 700. ) And a reflection and wire protection layer 800 surrounding the wire 400. The reflective and wire protective layer 800 may reflect at least a portion of the light emitted from the phosphor plate 300 or the light guide layer 700, and may protect the wire 400.
도 12c에 도시된 바와 같이, 수직형 발광소자 패키지(10)는 기판(100), 기판 상에 위치하는 수직형 발광소자(200), 수직형 발광소자(200) 상에 형성되는 형광체 플레이트(300)를 포함하고, 수직형 발광소자(200)는 기판(100) 상에 형성되는 제1 전원공급리드(110) 및 제2 전원공급리드(120)과 연결될 수 있다. 수직형 발광소자(200) 상에 상부 전극(210)이 형성되고, 와이어(400)는 상부전극(210)과 제1 전원공급리드(110)를 연결할 수 있다. 이러한 수직형 발광소자 패키지(10)의 구조는 전술한 바와 같으므로 자세한 설명은 생략한다. As shown in FIG. 12C, the vertical light emitting device package 10 includes a substrate 100, a vertical light emitting device 200 positioned on the substrate, and a phosphor plate 300 formed on the vertical light emitting device 200. The vertical light emitting device 200 may be connected to the first power supply lead 110 and the second power supply lead 120 formed on the substrate 100. The upper electrode 210 is formed on the vertical light emitting device 200, and the wire 400 may connect the upper electrode 210 and the first power supply lead 110. Since the structure of the vertical light emitting device package 10 is as described above, a detailed description thereof will be omitted.
도광층(700)은 제2 발광부(242)에서 방출된 빛을 반사 또는 굴절시켜 광출사구로 보낼 수 있다. 형광체 플레이트(300)는 질화갈륨(GaN)을 포함할 수 있다. 따라서, 도광층(700)의 굴절율은 반사 및 와이어 보호층(800)의 굴절률보다 크면, 도광층(700)은 제2 발광부(242)로부터 입사된 빛을 전반사시킬 수 있다. 예를 들면, 형광체 플레이트(300)의 굴절률은 1.4이고 반사 및 와이어 보호층(800)을 이루는 질화갈륨(GaN)의 굴절률이 2.5이므로, 도광층(700)의 굴절률의 범위는 1.4 이상 2.5 이하가 바람직하다. 도광층(700)과 반사 및 와이어 보호층(800)의 굴절율 비에 따라 제2 발광부(242)로부터 도광층(700)으로의 입사각은 소정각도 이상일 수 있다. The light guide layer 700 may reflect or refract the light emitted from the second light emitter 242 to the light exit port. The phosphor plate 300 may include gallium nitride (GaN). Therefore, when the refractive index of the light guide layer 700 is greater than the refractive index of the reflection and wire protection layer 800, the light guide layer 700 may totally reflect the light incident from the second light emitting part 242. For example, since the refractive index of the phosphor plate 300 is 1.4 and the refractive index of gallium nitride (GaN) constituting the reflection and wire protection layer 800 is 2.5, the refractive index range of the light guide layer 700 is 1.4 or more and 2.5 or less. desirable. The incident angle from the second light emitting part 242 to the light guide layer 700 may be greater than or equal to a predetermined angle according to the refractive index ratio between the light guide layer 700 and the reflection and wire protection layer 800.
또한, 도광층(700)은 도 12c에 도시된 바와 같이, 원호형상으로 형성될 수 있으나, 반드시 이에 한정되는 것은 아니다. 예를 들면, 도광층(700)은 제2 발광부(242)로부터의 빛이 광출사구로 전반사되면 되므로, 단면이 기울기를 갖는 경사진 직선일 수도 있다.In addition, the light guide layer 700 may be formed in an arc shape, as shown in FIG. 12C, but is not necessarily limited thereto. For example, the light guide layer 700 may be an inclined straight line having an inclined cross section because the light from the second light emitting part 242 needs to be totally reflected to the light exit port.
제4 실시 형태에 따른 수직형 발광소자 패키지(10)의 도광층(700)은 연성이 높도록 형성될 수 있다. 따라서, 도광층(700)에 위치하는 와이어(400)에 가해지는 응력을 줄일 수 있다.The light guide layer 700 of the vertical light emitting device package 10 according to the fourth embodiment may be formed to have high ductility. Therefore, the stress applied to the wire 400 positioned in the light guide layer 700 can be reduced.
제4 실시 형태에 따른 수직형 발광소자 패키지(10)의 도광층(700)은 연성재질로 형성될 수 있다. 예를 들면, 도광층(700)은 고굴절률의 실리콘 젤, 실리콘 고무 중 적어도 하나로 이루어질 수 있다. 연성재질의 도광층(700)은 상부전극(210) 및 제2 발광부(242) 상에 형성되어 와이어 넥(wire neck)부에 가해지는 응력을 완화시킬 수 있다.The light guide layer 700 of the vertical light emitting device package 10 according to the fourth embodiment may be formed of a flexible material. For example, the light guide layer 700 may be formed of at least one of a high refractive index silicone gel and a silicone rubber. The flexible light guide layer 700 may be formed on the upper electrode 210 and the second light emitting part 242 to relieve stress applied to the wire neck part.
예를 들면, 제4 실시 형태에 따른 수직형 발광소자 패키지(10)의 도광층(700)은 와이어(400)에 발생할 수 있는 응력으로 인해 와이어가 단선되는 등의 문제를 방지하기 위하여 경도가 낮은 수지를 쓰는 것이 바람직하다. 수지의 경도는 패키지의 구성에 따라 달라질 수 있지만, 대체로 쇼어(shore) 경도 A50 이하인 것이 바람직하다.For example, the light guide layer 700 of the vertical light emitting device package 10 according to the fourth embodiment has a low hardness in order to prevent problems such as disconnection of the wire due to stress that may occur in the wire 400. It is preferable to use a resin. The hardness of the resin may vary depending on the configuration of the package, but is generally preferred to be less than shore hardness A50.
일반적으로, 상부 전극(210a, 210b)과의 본딩을 위한 와이어(400)는 끊어짐에 약하고, 특히, 와이어 넥(wire neck)부에 가해지는 응력이 가장 높다. 따라서, 제4 실시 형태에 따른 수직형 발광소자 패키지(10)는 도광층(700)의 연성을 높임으로써, 와이어 넥부에 가해지는 응력을 완화시킬 수 있다. 따라서, 와이어(400)의 끊어짐을 방지하여 와이어(400)의 수명을 늘리는 효과가 있다.In general, the wire 400 for bonding with the upper electrodes 210a and 210b is susceptible to breaking, and in particular, the stress applied to the wire neck portion is highest. Therefore, in the vertical light emitting device package 10 according to the fourth embodiment, the ductility of the light guide layer 700 may be increased, thereby reducing the stress applied to the wire neck portion. Therefore, the breakage of the wire 400 is prevented, thereby increasing the life of the wire 400.
한편, 수직형 발광소자(200) 상에 연성의 도광층(700)을 형성하는 것은 반드시 수직형 발광소자에 적용되는 것이 아니라, 도광층이 형성되는 발광소자라면 수직형 발광소자 이외의 다른 형태의 발광소자에도 적용될 수 있다. 즉, 경도가 낮은 수지를 첨가하는 것에 의하여, 발광소자의 상부 전극에 본딩되는 와이어에 가해지는 응력을 완화시킬 수 있다.On the other hand, forming the flexible light guide layer 700 on the vertical light emitting device 200 is not necessarily applied to the vertical light emitting device, but a light emitting device in which the light guide layer is formed has a different shape than the vertical light emitting device. It can be applied to a light emitting device. That is, by adding a resin of low hardness, the stress applied to the wire bonded to the upper electrode of the light emitting element can be alleviated.
예를 들면, 발광소자 패키지는, 적어도 하나의 전원공급리드를 포함하는 기판, 기판 상에 배치되고, 와이어를 통하여 상기 적어도 하나의 전원공급리드와 연결되는 적어도 하나의 전극을 포함하는 발광소자, 및 발광소자 상에 배치되고 발광소자로부터의 빛을 도광하고, 저경도의 수지를 포함하는 도광층을 포함할 수 있다.For example, the light emitting device package may include a substrate including at least one power supply lead, a light emitting device disposed on the substrate and at least one electrode connected to the at least one power supply lead through a wire, and It may include a light guide layer disposed on the light emitting device to guide the light from the light emitting device, and comprises a low hardness resin.
이상에서 실시 형태를 중심으로 설명하였으나 이는 단지 예시일 뿐 본 발명을 한정하는 것이 아니며, 본 발명이 속하는 분야의 통상의 지식을 가진 자라면 본 실시 형태의 본질적인 특성을 벗어나지 않는 범위에서 이상에 예시되지 않은 여러 가지의 변형과 응용이 가능함을 알 수 있을 것이다. 예를 들어, 실시 형태에 구체적으로 나타난 각 구성 요소는 변형하여 실시할 수 있는 것이다. 그리고 이러한 변형과 응용에 관계된 차이점들은 첨부된 청구 범위에서 규정하는 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.Although the above has been described with reference to the embodiments, these are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains are not illustrated above in the range without departing from the essential characteristics of the present embodiment. It will be understood that various modifications and applications are possible. For example, each component specifically shown in embodiment can be modified and implemented. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (11)

  1. 기판;Board;
    상기 기판 상에 배치되는 수직형 발광소자;A vertical light emitting device disposed on the substrate;
    상기 수직형 발광소자 상에 배치되고, 저부의 적어도 하나 이상의 변을 따라 형성된 공간을 갖는, 형광체 플레이트; 및A phosphor plate disposed on the vertical light emitting device and having a space formed along at least one side of a bottom portion thereof; And
    상기 수직형 발광 소자와 상기 형광체 플레이트 사이에 배치되고, 상기 형광체 플레이트의 공간에 배치된 접착재;를 포함하는, 수직형 발광소자 패키지.And an adhesive disposed between the vertical light emitting device and the phosphor plate and disposed in a space of the phosphor plate.
  2. 제1항에 있어서,The method of claim 1,
    상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 오목진 홈인, 수직형 발광소자 패키지.And the space is a recessed groove along the side of the bottom of the phosphor plate.
  3. 제1항에 있어서,The method of claim 1,
    상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 그 단면이 정방형인, 수직형 발광소자 패키지.The space is a vertical light emitting device package, the cross-section is square along the side of the bottom of the phosphor plate.
  4. 제1항에 있어서,The method of claim 1,
    상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 그 단면이 원호상으로 오목진 홈인, 수직형 발광소자 패키지.The space is a vertical light emitting device package, the cross-section along the side of the bottom of the phosphor plate is a groove concave arcuate.
  5. 제1항에 있어서,The method of claim 1,
    상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라서 그 단면이 직각삼각형인, 수직형 발광소자 패키지.The space is a vertical light emitting device package, the cross-section is a right triangle along the side of the bottom of the phosphor plate.
  6. 제1항에 있어서,The method of claim 1,
    상기 공간은, 상기 형광체 플레이트의 상기 저부의 변을 따라 소정의 간격을 두고 복수 개로 형성되는, 수직형 발광소자 패키지.And a plurality of spaces are formed along a side of the bottom of the phosphor plate at predetermined intervals.
  7. 제1항에 있어서,The method of claim 1,
    상기 공간은, 상기 저부의 테두리를 따라 소정의 폭을 갖고 형성된, 수직형 발광소자 패키지.The space is a vertical light emitting device package formed with a predetermined width along the edge of the bottom.
  8. 제1항에 있어서,The method of claim 1,
    상기 형광체 플레이트의 저부면은 상기 수직형 발광소자의 상부면보다 면적이 좁고, 상기 수직형 발광소자의 발광부보다 면적이 넓은, 수직형 발광소자 패키지.The bottom surface of the phosphor plate is narrower than the upper surface of the vertical light emitting device, the area of the vertical light emitting device is larger than the light emitting portion of the vertical light emitting device package.
  9. 제1항에 있어서,The method of claim 1,
    상기 형광체 플레이트는 형광체를 함유한 유리 플레이트인, 수직형 발광소자 패키지.The phosphor plate is a glass plate containing a phosphor, the vertical light emitting device package.
  10. 제1항에 있어서,The method of claim 1,
    상기 기판은 서로 전기적으로 분리된 제1 전원공급리드와 제2 전원공급리드를 포함하고,The substrate includes a first power supply lead and a second power supply lead electrically separated from each other,
    상기 수직형 발광소자는,The vertical light emitting device,
    상부에 형성되고 상기 제1 전원공급리드와 한 쌍의 와이어를 통하여 각각 연결되는 한 쌍의 제1 전극, 및 하부에 형성되고 상기 제2 전원공급리드와 직접 연결되는 제2 전극을 포함하는, 수직형 발광소자 패키지.A vertical electrode including a pair of first electrodes formed on the upper side and respectively connected to the first power supply lead through a pair of wires, and a second electrode formed on the lower side and directly connected to the second power supply lead. Light emitting device package.
  11. 제1항에 있어서,The method of claim 1,
    상기 형광체 플레이트의 표면에는 대전방지처리층이 배치된, 수직형 발광소자 패키지.An antistatic treatment layer is disposed on the surface of the phosphor plate, the vertical light emitting device package.
PCT/KR2014/008576 2013-09-17 2014-09-15 Vertical-type light-emitting device package WO2015041435A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20130111963A KR20150032007A (en) 2013-09-17 2013-09-17 Vertical led package and lighting deviece using the same
KR10-2013-0111963 2013-09-17
KR20130115428A KR20150035176A (en) 2013-09-27 2013-09-27 Vertical led package and lighting device using the same
KR10-2013-0115428 2013-09-27

Publications (1)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006116809A (en) * 2004-10-21 2006-05-11 Nitto Denko Corp Antistatic adhesion type optical film and image display
JP2008294224A (en) * 2007-05-24 2008-12-04 Stanley Electric Co Ltd Semiconductor light emitting device
KR20120032780A (en) * 2010-09-29 2012-04-06 서울반도체 주식회사 Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
WO2012081411A1 (en) * 2010-12-13 2012-06-21 東レ株式会社 Phosphor sheet, led and light emitting device using same and method for producing led

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006116809A (en) * 2004-10-21 2006-05-11 Nitto Denko Corp Antistatic adhesion type optical film and image display
JP2008294224A (en) * 2007-05-24 2008-12-04 Stanley Electric Co Ltd Semiconductor light emitting device
KR20120032780A (en) * 2010-09-29 2012-04-06 서울반도체 주식회사 Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
WO2012081411A1 (en) * 2010-12-13 2012-06-21 東レ株式会社 Phosphor sheet, led and light emitting device using same and method for producing led

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