WO2015028512A1 - Module optoélectronique et procédé de fabrication de celui-ci - Google Patents

Module optoélectronique et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2015028512A1
WO2015028512A1 PCT/EP2014/068177 EP2014068177W WO2015028512A1 WO 2015028512 A1 WO2015028512 A1 WO 2015028512A1 EP 2014068177 W EP2014068177 W EP 2014068177W WO 2015028512 A1 WO2015028512 A1 WO 2015028512A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
conversion layer
aperture
diaphragm
converter
Prior art date
Application number
PCT/EP2014/068177
Other languages
German (de)
English (en)
Inventor
Boris Eichenberg
Michael Zitzlsperger
Christian Ziereis
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2015028512A1 publication Critical patent/WO2015028512A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
    • F21S41/151—Light emitting diodes [LED] arranged in one or more lines
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/19—Attachment of light sources or lamp holders
    • F21S41/192—Details of lamp holders, terminals or connectors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/40—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
    • F21S41/43—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades characterised by the shape thereof
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/40—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
    • F21S41/47—Attachment thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • An opto-electronic module and method for its manufacture The present invention relates to an optoelectronic Mo ⁇ dul according to claim 1 and a method for producing such an optoelectronic module according to claim 10 degrees.
  • the German priority application DE 10 2013 217 410.1 which expressly forms part of the disclosure of the present application, also describes an optoelectronic module and a method for producing such an optoelectronic module laser component.
  • Light emitting semiconductor modules are used in a variety of technical applications. Among other things, semiconductor modules, which comprise one or more semiconductor light-emitting diode ⁇ , increasingly being used as replacements for conventional Be ⁇ leuchtungssch in various fields of application, for example as the light source in a front slip ⁇ bowler a motor vehicle.
  • LED devices require a high contrast ratio between light emitting areas and non-light emitting areas adjacent thereto. This is the case, for example, in the realization of a low beam based on LED technology in a motor vehicle.
  • ⁇ de contacts are provided which are electrically contacted by means of a bonding wire.
  • one of a luminescent Leucht ⁇ material material existing converter plate is glued to the LED chips, which converts at least a portion of the light emitted by the LED chip light radiation by Lumineszenkonversion in a desired second light radiation.
  • part of the blue light excites the phosphor in the converter plate , which converts part of the blue light into yellow light.
  • conversion layers may contain mixtures of various luminescent phosphor materials which together produce white light with a broader spectrum.
  • the converter plates have a recess (notch) for the bonding wire (wire bond) at one corner. Because of this recess, the bonding wire is therefore not mechanically protected from above. Also, the subsequent casting with titanium oxide-filled silicone, which is intended to bring about a homogeneous radiation image of the chip or the chip arrangement, not sufficient mechanical protection of the bonding wires, especially since it can not be ensured that the bonding wires are sufficiently covered with titanium oxide to not be visible from above or even protrude from the titanium oxide potting.
  • a carrier substrate and at least one disposed on the Trä ⁇ gersubstrat semiconductor chip according to the invention is an optoelectronic module umfas sending provided for emitting a light radiation.
  • a conversion layer is arranged for converting at least part of the light radiation emitted by the semiconductor chip.
  • a arranged on the support substrate and a receiving space for the semiconductor chip and the conversion layer forming frame element is arranged.
  • a diaphragm element delimiting the receiving space is arranged on the frame element with at least one diaphragm opening which releases the conversion layer.
  • an edge region of the conversion layer is at least partially overlapped by a non-transparent edge region of the diaphragm element adjoining the diaphragm opening. Due to the special arrangement of the diaphragm element with respect to the conversion layer, wherein the edge region of the conversion layer is arranged outside the diaphragm opening and is therefore covered by the non-transparent region of the diaphragm element, the material defects typically occurring in the edge region of the conversion layer, such as. As clam outbreaks, chipping or Chamber, etc., as well as other inhomogeneities occurring in these border areas outside the surface defined by the aperture Leuchtflä.
  • a luminous surface is achieved with a particularly ho mogeneous luminance, the geometry is not determined by the conversion layer but only by the shape of the aperture.
  • the Cover B ⁇ ckung or overlap the conversion layer in its edge region further mechanical protection is typically located in that areas of electrical connections of the semiconductor chip, such as a semiconductor chip above con- tactile bonding wire, to be improved.
  • the formation of special recesses for electrical contacts of the semiconductor chip can be dispensed with, which simplifies manufacturing as a whole.
  • the diaphragm opening along at least part of its circumference forms a defined diaphragm edge for generating a defined bright-dark boundary for the light radiation emitted by the semiconductor chip and by the conversion layer.
  • the edge region of the diaphragm element adjoining the diaphragm edge overlaps the edge region of the conversion layer.
  • shutter edge extends at least about a portion of the circumference of an aperture.
  • the conversion layer is formed in the form of at least one converter plate attached to the underside of the panel element. Due to its attachment to the diaphragm element eliminates the costly placement and attachment of the converter plate on the semiconductor chip. By the spaced Anord ⁇ tion of the converter plate from the semiconductor chip is omitted This concept, also referred to as "remote phosphor", further calls for special notches (notch), thereby simplifying the manufacture of converter wafers.
  • the attachment of the converter plate on the diaphragm element is carried out such that material defects and inhomogeneities in the edge region of the converter plates are located below the non-transparent edge regions of the diaphragm element and therefore are not visible through the corresponding aperture. As a result, inhomogeneities in the illuminated image of the optoelectronic module can be avoided.
  • the semiconductor chip is part of a semiconductor chip arrangement which comprises a plurality of semiconductor chips arranged next to one another on the carrier substrate.
  • the semiconductor chips each indi vidual ⁇ converter plate and apertures are assigned.
  • the combination of a plurality of semiconductor chips to semiconductor chip arrangements enables the realization of light sources with higher light intensity.
  • the individual assignment of the semiconductor chip to the individual semiconductor chips makes it possible to adapt the light-emitting profile along the semiconductor chip arrangement.
  • the individual aperture openings for the semiconductor chips represent individual diaphragms with which it is possible to achieve defined light-dark transitions for each semiconductor chip while shading inhomogeneous edge regions of the respective converter wafer.
  • Layer thickness, material compositions and / or color aufwei ⁇ sen This makes it possible to vary the light radiation emitted by the luminous spots formed by a respective semiconductor chip and a converter wafer with regard to their intensity and color composition along the semiconductor chip arrangement.
  • the luminous profile of the semiconductor chip arrangement can be adapted to individual needs.
  • a further embodiment further provides that the converter plates assigned to the outer semiconductor chips of the semiconductor chip arrangement have a greater layer thickness than the converter plates which are assigned to the middle semiconductor chips of the semiconductor chip arrangement. This makes it possible to increase the proportion of light radiation emitted by the converter platelets in the edge region of the semiconductor chip arrangement and thus to compensate for the luminous intensity drop typical in the edge regions of the semiconductor chip arrangement.
  • the luminous areas thus formed are always at the same height with respect to the main beam direction of the module, so that the different thickness converter platelets do not lead to any loss in image quality.
  • the frame element is designed as a molded plastic part produced by means of an injection molding process on the diaphragm element. Since the frame in this concept has no iris function, it can be manufactured inexpensively using the Spritzgussver ⁇ proceedings of plastic material, through these so-called Moldrahmen results in a reduction of manufacturing cost position.
  • At least one bond connection is provided for the electrical connection of a semiconductor chip, wherein the bond connection is arranged in a region of the diaphragm element not covered by the associated diaphragm opening. Since the bonding ⁇ connection is below a non-transparent portion of the screen member and hence the bonding wire and, where ⁇ appropriate, an existing recess in the plane formed by the aperture luminous area are not visible in the conversion layer due to the bonding wire, will by this arrangement a particularly homogeneous light distribution over the entire surface of the aperture. On the other hand will so that the mechanical protection of the bonding wire improves because the covered by the non-transparent region of the diaphragm element bonding wire via the aperture is not immediacy ⁇ bar accessible.
  • the semiconductor chip is surrounded by a filling compound filling the receiving space in a lower region from a material which reflects the light radiation of the semiconductor chip.
  • a filling compound filling the receiving space in a lower region from a material which reflects the light radiation of the semiconductor chip.
  • the semiconductor chip assembly is achieved by means of the reflective material, which in turn total in each converter platelets to a reduction in the induced by adjacent semiconductor chips foreign stimulation and successful ⁇ Lich to homogenization of the light intensity along the Semiconductor chip assembly leads.
  • the conversion layer is designed in the form of a volume converter deposited on the semiconductor chip in the receiving space.
  • a volume conversion eliminates the costly production and assembly of individual converter plates, which is reflected in a reduction of the production cost and thus also in a reduction of manufacturing costs.
  • Due to the preferably to a central region of the receiving space concen ⁇ anti-cross aperture remain inhomogeneities of the conversion layer, such as material on litters and Schichtdickenva ⁇ riationen arising reinforced in the edge regions of the deposited layer during deposition of the volume converter, hidden under the non-transparent areas of the panel element and thus do not or do not lent to the luminous image of the light aperture defined by the aperture.
  • a method of manufacturing an optoelectronic module further comprising a disposed on a carrier substrate the semiconductor chip to emit a light radiation and is arranged above the semiconductor chip conversion layer for converting we ⁇ antes a portion of the light emitted from the semiconductor chip light radiation and is at least above the conversion layer ⁇ arranged aperture element provided with at least one the conversion ⁇ layer releasing aperture.
  • a frame member enclosing the aperture and forming a receiving space for the semiconductor chip and the conversion layer is produced on the diaphragm element.
  • the frame member having the panel element is so mounted on the Trä ⁇ gersubstrat that the semiconductor chip inside the receiving space is arranged and an adjoining to the Blendenöff ⁇ voltage edge region of the panel element an edge portion of the conversion layer at least partially ⁇ overlaps.
  • the generation of the frame member to the panel element before the assembly of the frame member on the carrier substrate ⁇ it enables the use of a plastic injection molding process without the risk of contamination or exposure of the mounted on the carrier substrate the semiconductor chip.
  • the art ⁇ material injection molding process in turn allows a cost and time efficient production of the frame element.
  • At least one the aperture ver ⁇ closing converter chip is fixed on the underside of the Blen ⁇ denelements for producing the conversion layer.
  • the frame element is produced by depositing a plastic material with ⁇ means of an injection molding process on the underside of Blen ⁇ denelements. It turns the plastic injection molding process is a relatively simple, fast and inexpensive production process for the manufacture of the frame member. Further, the material costs are significantly re prised ⁇ can be by the use of a plastic or Moldrahmens.
  • the conversion coating is produced in the form of a on the semiconductor chip is arranged ⁇ volume Converter by the receiving ⁇ space is partially filled through the aperture with at least one conversion material.
  • volume ⁇ converter provides an economical alternative for the manufacture of converter ⁇ lung platelets. In this case, a desired layer thickness of the converter layer relatively easily be created by varying the filling level of the conversion material within the receiving space.
  • FIG. 2 shows a detailed representation of the optoelectronic module from FIG. 1;
  • FIG. 3 shows a cross section through an aperture element with five apertures.
  • 4 shows the diaphragm element from FIG. 3 in a plan view;
  • FIG. 5 shows a first step in which an adhesive is applied along the edges of the apertures on a Be ⁇ te of the panel element.
  • Figure 6 is a plan view of the shutter member with the adhesive ⁇ mass from FIG. 5;
  • FIG. 7 shows a further method step in which a plurality of converter flakes are fastened in the region of the aperture openings on the blen ⁇ denelement
  • FIG. 8 shows a plan view of the diaphragm element with the converter plates of FIG. 7 fastened thereon;
  • FIG. Fig. 9 a further process step in which denelement on the Blen a ⁇ a receiving chamber forming frame member it is ⁇ testifies;
  • FIG. 10 shows a plan view of the diaphragm element from FIG. 9 with the frame element produced thereon;
  • FIG. 11 is a cross section through the pre-processed ⁇ aperture element of Figure 10 taken along section line XI-XI.
  • FIG. 12 shows the frame element preassembled on the panel element when mounted on a carrier substrate with a total of five light-emitting semiconductor chips;
  • FIG. 14 is a plan view of the finished module of Fig. 13;
  • FIG. 15 shows an alternative embodiment of the light-emitting module from FIG. 14, in which the semiconductor chips are embedded in a reflective filling compound;
  • FIG. 16 shows an alternative embodiment of the light-emitting module from FIG. 15 with a converter plate extending over a plurality of aperture openings;
  • FIG. 17 shows a cross section through a precursor of a diaphragm element with an elongated diaphragm opening, an elongate converter plate and a frame element produced on the diaphragm element;
  • Fig. 18 is a plan view of the precursor of Fig. 17;
  • FIG. 19 shows a finished optoelectronic module according to the al ⁇ ternatives embodiment, wherein said plurality of semiconductor chips ei ⁇ ne common aperture.
  • Figure 20 is a plan view of the finished optoelectronic Mo ⁇ dul from FIG. 19;
  • 21 shows a production method for producing the frame element by means of an injection molding tool on the panel element
  • FIG. 22 shows an alternative manufacturing process for creating the frame member by using a modified injection molding ⁇ tool on the panel element.
  • FIG. 23 shows an alternative embodiment of the shutter element with a reduced structural height, in which the converter plate is arranged in a depression of the diaphragm element;
  • FIG. Figure 24 is a further alternative embodiment of the Vorpro ⁇ domestic product, wherein the converter plate is held by the frame member on the aperture element.
  • Figure 25 is an alternative embodiment of the opto-electro ⁇ African module having formed in the form of a volume converter from ⁇ conversion layer.
  • Fig. 26 shows a variation of the optoelectronic module of Fig. 25 with a thinner conversion layer.
  • the optoelectronic module according to the invention comprises a spe cial ⁇ diaphragm element, which is provided with a, preferably consisting of plastic or epoxy frame member and the intermediate product thus produced subsequently on a (for example, in the form of a printed circuit board Engl.
  • Printed Ciruit Board, PCB be ⁇ solidifies, on which already a Halbleiterchipanord ⁇ tion is arranged with at least one light-emitting semiconductor chip.
  • the diaphragm element and the frame element thereby form a receiving space for the semiconductor chips and the conversion layer arranged above them.
  • Which consists of a luminescence material neszenten conversion layer can be formed in the form of a secured to the underside of the panel element in the rich Be ⁇ an aperture converter plate. In the case of multiple apertures, a separate converter plate may be provided for each aperture.
  • the conversion layer may be in the form of a deposited in the receiving space on the light emitting semiconductor chip volume converter realized ⁇ the.
  • the Kon ⁇ version layer and the diaphragm element are arranged to each other to ⁇ such that an opening formed in the diaphragm element Blen ⁇ denö réelle preferably only a central region of the Konver- version layer releases, while the edge region or the
  • FIG. 1 shows schematically a cross section through an inventive opto-electronic module 100.
  • the module 100 in this case comprises a support substrate 110 with three subsequent montier ⁇ th light emitting semiconductor chips 121, 122, 123, which by means of metallization 112, 113, 114, 115 and bonding connections 118 are electrically connected.
  • the respective semiconductor chips 121, 122, 123 formed in the form of a light-emitting diode (LED) and forming a semiconductor chip arrangement 120 are comprised of a plastic frame element 150 fastened on the carrier substrate 110 or on a layer formed thereon, which laterally surrounds a cavity serving as a receiving space 154 limited.
  • a plate-shaped panel member 160 is arranged, wel ⁇ ches the receiving space 154 closes at the top.
  • the aperture member 160 has three apertures 161, 162, 163, which are respectively arranged above a semiconductor light-emitting ⁇ semiconductor chip 121, 122, 123, and each forming an exit window for the light emitted from the respective semiconductor chips light radiation.
  • Each semiconductor chip 121, 122, 123 is associated with a separate converter plates 131, 132, 133, which also each located in the receiving space 154 ⁇ wells at the bottom of the screen member 160 in the area assigned to the respective semiconductor chip aperture 161, 162, 163rd
  • a metallic stamped or etched part can be used as the diaphragm element 160.
  • a metal such as copper or a copper alloy, but can be used as material for the aperture element 160 in principle, any other stampable or etchable material used kom ⁇ men, such as polycrystalline silicon or ceramic Mate ⁇ rials.
  • the use of a metallic diaphragm element 160 allows a particularly good dissipation of the heat generated by the light-emitting semiconductor chips 121, 122, 123.
  • Anisotropic etching processes which are known, for example, from micromechanical structuring, can be used to produce a particularly precise diaphragm edge or diaphragm edge 166 (shutter edge).
  • FIG. 2 shows a detailed representation of the optoelectronic module 100 from FIG. 1. It can be seen that the edge regions 171 of the diaphragm element immediately adjacent to the diaphragm opening 161 overlap the underlying edge regions 136 of the converter plate 131, so that at the edges of the converter plates 131 existing material defects, such as mussel outbreaks, chipping and other inhomogeneities which, for example, during Aussä ⁇ conditions or breaking out of the converter plate 131 from a larger piece may arise, outside of the defined by the aperture 161 window area.
  • the edge regions 171 of the diaphragm element immediately adjacent to the diaphragm opening 161 overlap the underlying edge regions 136 of the converter plate 131, so that at the edges of the converter plates 131 existing material defects, such as mussel outbreaks, chipping and other inhomogeneities which, for example, during Aussä ⁇ conditions or breaking out of the converter plate 131 from a larger piece may arise, outside of the defined by the aperture 161 window area
  • the diaphragm opening 161 can furthermore be arranged in relation to the associated semiconductor chip 121 in such a way that the sensitive bond connections 118 of the semiconductor chip 121 are completely or at least, as is the case in FIG. 2, largely ⁇ of the non-transparent edge regions 171 of the diaphragm element 160 are covered.
  • the plastic frame member 150 is attached by an adhesive 155 on the Trä ⁇ gersubstrat 110 or on a layer thereon 112, 115th
  • the frame element 150 which is preferably formed from a white, light or reflective plastic material, may, as shown in FIG. 2, have an asymmetrical cross-sectional profile with a bevel 153 tapering upwards towards the receiving space 154. As a result, light radiation, which is emitted laterally by the semiconductor chip, is better guided into the conversion layer 130 formed by the converter platelets 131-135.
  • the converter plate 131 is arranged in a specific and depending on the application variable distance to the underlying semiconductor chip 121 and the associated bonding wire 118. This eliminates the need to form a special recess (notch) in the converter plate 131.
  • a plate-Miges panel element is first generated 160 with the desired number and An ⁇ arrangement of apertures.
  • a metal, silicon or ceramic plate can be used, in principle, any ge ⁇ suitable material for this purpose is eligible.
  • a suitable method such as stamping or etching in the plate then aperture openings in the desired number, shape ,,
  • FIG. 3 shows a cross section through a correspondingly finished diaphragm element 160 with IMP EXP ⁇ including five uniformly over the length of the panel element ver ⁇ shared aperture holes 161 - 165.
  • the figure 4 shows a plan view of the shutter member 160 with the cut ⁇ plane III-III , which corresponds to the representation of Figure 3. It can be seen that the apertures 161 - 165 are each rectangular in shape and that the respective upper edge of an aperture each forms a defined aperture edge 166, which is made with a special recuperzisi ⁇ on in a Proj emiesbeleuchtungssystem a sharp demarcation between illuminated and to allow not illuminated areas.
  • an adhesive or an adhesive 170 is first applied along the circumference of the apertures 161 - 165.
  • the application of the adhesive 170 is preferably carried out at a certain distance from the edges of the apertures 161-165, in order to prevent the adhesive 170 from entering the window areas defined by the aperture 161-165 as a result of the subsequent adhesion process.
  • FIG. 5 shows the corresponding state of the process in a sectional illustration along the sectional plane V-V.
  • FIG. 6 shows the corresponding state of the process in a plan view of the underside 168 of the panel element 160.
  • a preferably made of plastic before ⁇ frame member 150 will now he attests to the ⁇ equipped with the converter plate aperture element 160th
  • the frame element 150 preferably surrounds the apertures 161 - 165 with the associated converter plates 131 - 135 completely. This is apparent from the figure 10 which represents a plan view of the representation of the underside 168 of the converter plate with 131- 135 and frame member 150 out ⁇ endowed panel element 160th
  • FIG. 10 A cross-sectional view along the sectional plane XI-XI of FIG. 10 is shown in FIG.
  • the intermediate product 101 formed by the diaphragm element 160, the converter plates 131-135 and the frame element 150 is then mounted on a carrier substrate 110 equipped with a total of five light-emitting semiconductor chips 121-135.
  • a carrier substrate 110 equipped with a total of five light-emitting semiconductor chips 121-135.
  • This is done before ⁇ preferably by means of a bonding technique to form an adhesive pre preferably on the flat top 152 of the frame member 150 is applied and the thus prepared intermediate 101 with the face down on the top 111 of the Trä ⁇ gersubstrats 110 having disposed thereon Halbleiterchi- pan angel 120 is applied.
  • This process situation is shown in FIG.
  • each aperture opening 161 - 165 having the underlying converter plates 131-135 in the desired position above the respective associated semiconductor chips 121 - is the 125th
  • a simplified representation of ⁇ friendliness Trä ⁇ gersubstrats 110 and the semiconductor chip 121 has been here - 125 is used without a separate representation of the electrical connections and Sons ⁇ tiger structures.
  • FIG. 13 shows the prefabricated optoelectronic module 100 with the carrier substrate 110, the semiconductor chip arrangement 120 arranged thereon comprising a total of five semiconductor chips 121-125, the converter platelets 131-135 mounted over the individual semiconductor chips, the one attached to the top 111 of the carrier substrate 110, and FIG Half ⁇ conductor chips and the converter platelet comprising frame element 150 and the side of the frame member 150 laterally limited receiving space 154 upwards closing element 160th
  • FIG. 14 shows a plan view of the finished optoelectronic module 100 with the sectional plane XIII-XIII of the sectional view from FIG. 13 shown by a dashed line.
  • the bonding wire 118 of a semiconductor chip 121-125 is preferably located on the defined aperture edge 166 of the respective aperture opening 161 - 165 arranged opposite side. In this way, light scattering caused by the bonding wire 118 can be prevented at this diaphragm edge 166, which could lead to a deterioration of the imaging.
  • each converter plate having the same characteristics can depending on the application in principle, different converters platelets in an opto electronic module are used. In this case, converter plates with different colors, material compositions and layer thicknesses can be combined in one array. As a result, the emitted from the individual converter plates and the respective underlying semiconductor chips
  • Figure 15 shows an alternative to the Figure 14 embodiment in which the two outer Converter plate 331, are formed thicker than the converter 335 ⁇ platelet 332-334 in the middle of the Konverterplättchenano ⁇ rdnung 120.
  • This light attenuation is due to the fact that the outer converter plates 131, 135 experience an additional excitation of only one adjacent semiconductor chip, while the converter plates 132, 133, 134 are additionally excited in the middle region of the arrangement of two adjacent semiconductor chips.
  • the figure 16 shows an embodiment in which the middle three converter plates 132, 133, 134 in contrast to the embodiment of Figure 15 have a common converter plate 132.
  • Die beiden Konverterplättchen 132, 133 , 133 . In addition to the possibility of providing an individual diaphragm opening for each semiconductor chip of the semiconductor chip arrangement, it is also possible to use diaphragm openings which extend over a plurality of semiconductor chips of the semiconductor chip arrangement.
  • the figures 17 to 20 the production of an optoelectronic module is shown, which uses a ⁇ a Zige aperture for a total of semiconductor chips.
  • the figure shows a section through a entspre ⁇ and fair intermediate 101 whose an aperture member 160, in contrast to the embodiment of FIG 9 comprises a to 120 extending over the entire length of the semiconductor chip assembly elongate aperture 161st
  • a converter plate 131 extending over the entire diaphragm opening is already fastened.
  • Figure 18 shows a corresponding plan view of the underside of the intermediate Un ⁇ 101.
  • the sectional plane XVII-XVII of the sectional view of Figure 17 indicated by a dash-dot line.
  • FIG. 19 shows the finished optoelectronic module with the frame element 150 adhesively bonded to the carrier substrate 110 and the aperture element 160 arranged thereon, which terminates the receiving space 154 defined by the frame element upwards.
  • the common diaphragm opening 161 and the common converter plate 131 arranged underneath extend over the entire length of the semiconductor chip arrangement 120.
  • FIG. 20 shows a plan view of the upper side of the optoelectronic module 100 from FIG. 19.
  • the sectional plane XIX-XIX of the sectional view from FIG. 19 is indicated by means of a dashed-dotted line.
  • the frame element 150 is preferably used as an injection-molded part directly on the diaphragm element. ment 160 generated. This is done, as the figure 21 shows, in ⁇ preferably by means of a special injection mold 200, which is placed in the injection molding process on the upper surface 168 of the converter plate 131 equipped with the panel element 160th
  • the injection molding tool 200 has a first cavity 201, which represents a negative impression of the frame element 150 to be manufactured. By injecting egg ⁇ ner plastic material into the first cavity 201, the frame member 150 is formed.
  • 200 includes the injection molding tool to a second cavity 202 for receiving the wafer, converter 131, which enables the generation of the frame member 150 on the already with the converter plate 131 equipped kitchens ⁇ ended aperture element 160th
  • the frame member 150 may also be created prior to attachment of the converter pads to the aperture member 160.
  • FIG. 22 shows a possible scenario in which the frame element 150 is injection-molded on the upper side 168 of the diaphragm element 160 by means of an injection molding tool 200.
  • the shutter member 160 may be provided with step-like recesses 169, in which then the platelet Converter be glued 131st Such an alternative embodiment is shown in FIG.
  • a fastening of a converter plate 131 on the diaphragm element 160 can take place by means of the injection-molded frame element 150.
  • the converter plate 131 is over-molded in its edge region 136 with plastic compound.
  • the resulting heel structures 156 the converter plate 131 is fixed to the aperture element 160.
  • the conversion layer 130 can also be realized as a volume converter.
  • the diaphragm element 160 is equipped with a corre ⁇ chenden frame member 150 and the case ⁇ te intermediate product, for example by means of an adhesive technique attached to the carrier substrate 110. Subsequently, the receiving space thus formed is filled over at least 154 an aperture 161 with a preferably liquid conversion mate rial ⁇ up to a desired level.
  • such an embodiment is shown with a signal generated by filling the receiving space 154 with a conversion material Vo ⁇ lumen convertor 130th
  • the layer thickness fluctuations 138 which usually occur in the edge regions 136 of the conversion layer 130 are covered by the non-transparent regions of the diaphragm element 160.
  • the receiving space 154 can be filled up to the upper edge of the light-emitting semiconductor chip 121 with a suitable filling compound 180 made of a reflective material, for example titanium oxide.
  • FIG. 26 shows an electro-optical module in which, unlike the embodiment from FIG. 25, the receiving space 154 is only partially filled with the volume converter 130. Since the Volu ⁇ menkonverter 130 is already a certain mechanical protection of the bonding wire 118, the aperture 161, as in the embodiment of Figue 25 of the case to be relatively large, so that there is a large light emitting area as possible.
  • an adjustment of the size of the aperture 161 may be useful so that the bonding wire 118 at least for the most part below an adjacent to the aperture 161 non-transparent edge region 171 of the shutter member 160 is located.
  • the frame element may also be designed as a separately produced molded part and subsequently bonded to the underside of the panel element.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un module optoélectronique comprenant : un substrat de support (110), au moins une puce à semi-conducteur (121 à 125) disposée sur le substrat de support (110) et servant à émettre un rayonnement lumineux, une couche de conversion (130) disposée au-dessus de la puce à semi-conducteur (121 à 125) et servant à convertir au moins une partie du rayonnement lumineux émis par la puce à semi-conductrice (121 à 125). La couche de conversion (130) possède une surface lumineuse supérieure opposée à la puce à semi-conducteur, un élément de cadre (150) disposé sur le substrat de support (110) et formant un espace de réception (154) destiné à la puce à semi-conducteur (121 à 125) et à la couche de conversion (130), et un élément de diaphragme (160) disposé sur l'élément de cadre (150), délimitant l'espace de réception (154) et comportant au moins une ouverture de diaphragme (161 à 165) qui libère une zone de la surface lumineuse supérieure de la couche de conversion (130). Une zone en bordure (171), non transparente, de l'élément de diaphragme, qui est adjacente à l'ouverture de diaphragme (161 à 165), chevauche au moins partiellement une zone en bordure (136) de la surface lumineuse supérieure de la couche de conversion (30) de sorte qu'un bord de diaphragme (166), qui est défini par au moins une partie de la périphérie de l'ouverture de diaphragme (161 à 165), forme une limite clair-obscur pour le rayonnement lumineux émis par la surface lumineuse de la couche de conversion (130).
PCT/EP2014/068177 2013-09-02 2014-08-27 Module optoélectronique et procédé de fabrication de celui-ci WO2015028512A1 (fr)

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