WO2015020445A1 - Photoresist resin composition for dry film photoresist - Google Patents

Photoresist resin composition for dry film photoresist Download PDF

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Publication number
WO2015020445A1
WO2015020445A1 PCT/KR2014/007306 KR2014007306W WO2015020445A1 WO 2015020445 A1 WO2015020445 A1 WO 2015020445A1 KR 2014007306 W KR2014007306 W KR 2014007306W WO 2015020445 A1 WO2015020445 A1 WO 2015020445A1
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WIPO (PCT)
Prior art keywords
resin composition
photosensitive resin
dry film
photoresist
formula
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PCT/KR2014/007306
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French (fr)
Korean (ko)
Inventor
봉동훈
최종욱
Original Assignee
코오롱인더스트리 주식회사
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Application filed by 코오롱인더스트리 주식회사 filed Critical 코오롱인더스트리 주식회사
Priority to CN201480044108.9A priority Critical patent/CN105705998B/en
Priority to JP2016515967A priority patent/JP6005327B2/en
Publication of WO2015020445A1 publication Critical patent/WO2015020445A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Definitions

  • the present invention relates to a photosensitive resin composition for dry film photoresist.
  • the photosensitive resin composition is used in the form of a dry film photoresist (DFR), a liquid photoresist ink, or the like used in a printed circuit board (PCB) or a lead frame. .
  • DFR dry film photoresist
  • PCB printed circuit board
  • ITO electrodes In addition to manufacturing printed circuit boards (PCBs) and lead frames, ITO electrodes, bus address electrodes and black matrix fabrication of rib barriers and other displays of plasma display panels (PDPs) Dry film photoresists are also widely used.
  • PCBs printed circuit boards
  • PDPs plasma display panels
  • dry film photoresists are widely used for lamination on copper clad laminates.
  • a pretreatment process is first performed in order to laminate copper clad laminate, which is a raw material of the PCB.
  • the pretreatment process is followed by drilling, deburring, and front in the outer layer process, and the front or pickling in the inner layer process.
  • Bristle brush and jet pumice processes are mainly used in the frontal process, and the pickling may be subjected to soft etching and 5 wt% sulfuric acid pickling.
  • a dry film photoresist (hereinafter referred to as DFR) is generally laminated on the copper layer of the copper-clad laminate.
  • the photoresist layer of the DFR is laminated onto the copper surface while using a laminator to peel off the protective film of the DFR.
  • lamination speed is 0.5 ⁇ 3.5m / min, temperature 100 ⁇ 130 °C, roller pressure heating roll pressure 10 ⁇ 90psi.
  • the printed circuit board is left to stand for at least 15 minutes to stabilize the substrate, and then exposed to the photoresist of the DFR using a photomask having a desired circuit pattern.
  • the photoresist irradiated with the ultraviolet ray is polymerized by the photoantagonist contained at the irradiated portion. Initially, oxygen in the photoresist is consumed, and then the activated monomer is polymerized to cause a crosslinking reaction, and then a large amount of monomer is consumed to proceed with the polymerization reaction. On the other hand, the unexposed portion is present in a state where the crosslinking reaction does not proceed.
  • a development process of removing unexposed portions of the photoresist is performed.
  • an aqueous solution of potassium carbonate and sodium carbonate of 0.8 to 1.2 wt% is used as a developer.
  • the photoresist of the unexposed portion is washed away by the saponification reaction of the developer polymer with the carboxylic acid of the binder polymer in the developer, and the cured photoresist remains on the copper surface.
  • a circuit is formed through different processes depending on the inner layer and outer layer processes.
  • a circuit is formed on the substrate through a corrosion and peeling process, and in the outer layer process, after the plating and tenting process, etching and solder peeling are performed to form a predetermined circuit.
  • the dry film photoresist exposed in the plating process is placed in a strong acid or strong alkaline liquid environment. For this reason, when the chemical resistance is insufficient, the phenomenon that the dry film photoresist is separated from the copper clad laminate occurs.
  • discoloration may occur on the appearance of the substrate to which the plating treatment is applied, or plating efficiency may be lowered, which may cause disconnection.
  • the peeling characteristic after hardening of the photosensitive resin composition is calculated
  • the peeling characteristic is insufficient, it is difficult to peel the resist between fine wirings in the resist stripping step after the plating treatment, and the peeling time increases, and the production efficiency decreases.
  • the main object of the present invention is to provide a photosensitive resin composition for dry film photoresist that has a high peeling speed and excellent resistance to plating solution while maintaining excellent fine wire adhesiveness and resolution.
  • one embodiment of the present invention [A] photopolymerization initiator; [B] alkali developable binder polymers; And [C] a photopolymerizable compound, wherein the [C] photopolymerizable compound includes a compound represented by the following Formula 1, wherein the weight ratio of the [C] photopolymerizable compound to the alkali developable binder polymer is 1: It is 0.1-1,
  • the photosensitive resin composition for dry film photoresists is provided.
  • l + n is an integer of 2 or 3
  • m is an integer of 12 to 18.
  • the photosensitive resin composition is based on solids
  • the [A] photopolymerization initiator may include 2 to 10% by weight
  • the compound represented by Formula 1 may include 5 to 40% by weight.
  • the photosensitive resin composition is based on solids
  • the [A] photopolymerization initiator may include 2 to 10% by weight
  • the compound represented by Formula 1 may include 10 to 35% by weight.
  • the photosensitive resin composition for a dry film photoresist according to the present invention can be improved in quality and productivity in PCB manufacturing due to the fast peeling speed and excellent resistance to plating solution while maintaining excellent thin wire adhesion and resolution.
  • the invention [A] photopolymerization initiator; [B] alkali developable binder polymers; And [C] a photopolymerizable compound, wherein the [C] photopolymerizable compound includes a compound represented by the following Formula 1, wherein the weight ratio of the [C] photopolymerizable compound to the alkali developable binder polymer is 1: It is 0.1-1, It is related with the photosensitive resin composition for dry film photoresists.
  • l + n is an integer of 2 to 3
  • m is an integer of 12 to 18.
  • the photosensitive resin composition for dry film photoresists comprises at least one or more compounds represented by the formula (1) in the [C] photopolymerizable compound, thereby maintaining a fine line adhesion and resolution of the excellent dry film photoresist while maintaining Is fast and can have excellent resistance to the plating liquid.
  • the photopolymerization initiator included in the photosensitive resin composition for dry film photoresists according to the present invention is a material that initiates a chain reaction of the photopolymerizable monomer by UV and other radiation, and plays an important role in curing the dry film photoresist.
  • Anthraquinone derivatives such as 2-methyl anthraquinone and 2-ethyl anthraquinone
  • benzoin derivatives such as benzoin methyl ether, benzophenone, phenanthrene quinone, and 4,4'-bis- (dimethylamino) benzophenone.
  • the content of the photopolymerization initiator is included in 2 to 10% by weight based on the total weight of the photosensitive resin composition. Sufficient sensitivity can be obtained when the content of the photopolymerization initiator is within the above range.
  • the alkali developable binder polymer of the present invention is a copolymer of (meth) acrylic acid and (meth) acrylic acid ester. Specifically, methyl acrylate, methyl methacrylate, ethyl acrylate, methyl methacrylate, butyl acrylate, butyl methacrylate, acrylic acid, methacrylic acid, 2-hydroxy ethyl acrylate, 2-hydroxy ethyl Copolymerization of two or more monomers selected from linear acrylic acid polymers synthesized with methacrylate, 2-hydroxy propyl acrylate, 2-hydroxy propyl methacrylate, acrylamide, methacrylamide, styrene, ⁇ -methyl styrene Copolymer acrylic polymer obtained through.
  • the alkali developable binder polymer of the present invention has a weight average molecular weight of 30,000 to 150,000 and a glass transition temperature of 20 to 150 ° C. in consideration of the coating property of the dry film photoresist, the followability, and the mechanical strength of the resist itself after circuit formation.
  • the weight ratio of the photopolymerizable compound to the alkali developable binder polymer is included in the photosensitive resin composition in an amount of 1: 0.1 to 1.
  • the weight average molecular weight was measured by using polystyrene in standard using Waters 450 GPC, Shodex 10 5 , 10 4 , 10 3 , and glass transition temperature was measured using DSC 7 of Perkin Elmer. .
  • the photopolymerizable compound of the present invention may be used alone or in combination with a monomer including at least two ethylene groups at the terminal.
  • l + n is an integer of 2 or 3
  • m is an integer of 12 to 18.
  • the compound represented by Formula 1 may improve hydrophobicity of the photosensitive resin composition to significantly increase resistance to a developer and a plating solution, and may shorten a peeling time of the cured film.
  • the excellent resistance to the plating liquid of the photosensitive resin composition means that the plating liquid is not contaminated and thus the effect on the form and color of the plating appearance is small.
  • the compound represented by Formula 1 in 5 to 40% by weight based on the total weight of the photosensitive resin composition solids, more preferably 10 to 35% by weight.
  • the content of the compound represented by the formula (1) is less than 5% by weight relative to the total weight of the photosensitive resin composition solids, the effect of the addition of the compound represented by the formula (1) is insufficient, and when the content exceeds 40% by weight The problem that time increases rapidly may occur.
  • the photopolymerizable compound of the present invention may include a monomer including at least two ethylene groups at the terminal in addition to the compound represented by Chemical Formula 1.
  • Monomers containing at least two ethylene groups at the terminals include ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, and tetraethylene glycol dimethacrylate.
  • the weight ratio of the [C] photopolymerizable compound with respect to the said [B] alkali developable binder polymer is 1: 0.1-1.
  • the weight ratio of the photopolymerizable compound is within the above range, an effect of enhancing light sensitivity, resolution, adhesion, and the like can be obtained.
  • a solvent of the photosensitive resin composition of the present invention a solvent selected from methyl ethyl ketone (MEK), methanol, THF, toluene and acetone is generally used and is not particularly limited to the above solvent.
  • MEK methyl ethyl ketone
  • the content is also a photopolymerization initiator and alkali developability. It can be contained according to the content of the binder polymer and the photopolymerizable compound.
  • the photosensitive resin composition of the present invention may further include other additives as necessary, and other additives include, as plasticizers, dibutyl phthalate, diheptyl phthalate, dioctyl phthalate, diallyl phthalate in the form of phthalic acid ester; Triethylene glycol diacetate, tetraethylene glycol diacetate in the glycol ester form; P-toluene sulfonamide, benzenesulfonamide, n-butylbenzenesulfonamide in acid amide form; Triphenyl phosphate and the like can be used.
  • a leuco dye and a coloring substance examples include tris (4-dimethylamino-2-methylphenyl) methane, tris (4-dimethylamino-2methylphenyl) methane, fluorane dye and the like.
  • a leuco crystal violet is used, contrast is favorable and preferable.
  • content in the case of containing a leuco dye 0.1-10 weight% is preferable in the photosensitive resin composition. 0.1 weight% or more is preferable from a viewpoint of contrast expression, and 10 weight% or less is preferable from a viewpoint of maintaining storage stability.
  • coloring substance examples include toluenesulfonic acid monohydrate, fuxin, phthalocyanine green, oramin base, paramagenta, crystal violet, methyl orange, nile blue 2B, victorian blue, malachite green, diamond green, basic blue 20, and the like. Can be mentioned.
  • 0.001 to 1 weight% is preferable in the photosensitive resin composition. The content of 0.001% by weight or more has the effect of improving handleability, and the content of 1% by weight or less has the effect of maintaining storage stability.
  • additives may further include a thermal polymerization inhibitor, a dye, a discoloring agent, an adhesion promoter, and the like.
  • the photosensitive resin composition having the composition as described above may be prepared as a photosensitive resin composition for dry film photoresist, and has a thickness of 5 to 200 ⁇ m using a conventional coating method on a conventional base film such as polyethylene terephthalate.
  • the photosensitive resin layer may be coated and then dried, and the dried photosensitive resin layer may be laminated on an upper surface thereof using a conventional protective film such as polyethylene to prepare a dry film.
  • the dry film thus prepared is subjected to exposure and development by a method of evaluating the respective physical properties.
  • a four-neck round bottom flask was equipped with a mechanical stirrer and reflux, and then purged inside the flask with nitrogen.
  • 90 g of MEK (Methyl Ethyl Ketone) and 10 g of Propylene Glycol Monomehtyl Ether Acetate (PGMEA) were added to the flask purged with nitrogen, followed by 0.8 g of azobisisobutyronitrile (AIBN) to completely dissolve the flask.
  • MEK Metal Ethyl Ketone
  • PGMEA Propylene Glycol Monomehtyl Ether Acetate
  • the compound represented by Formula 1 of the present invention was prepared by the following method.
  • Table 1 shows the poly (propylene glycol) used in Preparation Examples 2 to 4.
  • Table 2 below shows the compounds represented by Formula 1 prepared according to Preparation Examples 2 to 4.
  • Polystyrene reduced weight average molecular weight (Mw) was determined by gel permeation chromatography (GPC) (Waters Alliance e2695 + Waters 2414 RI Detector). The polymer to be measured was dissolved in tetrahydrofuran to a concentration of 0.2%, filtered through a 0.45 ⁇ m PTFE syringe filter, and 10 ⁇ L was injected into the GPC. The mobile phase of GPC used tetrahydrofuran and was introduced at a flow rate of 1.0 mL / min and the analysis was performed at 30 ° C. The column connected two Agilent Plgel Mixed D in series. As a detector, it measured at 40 degreeC using the RI detector. The calibration curve was prepared by dissolving polystyrene standard in THF at a concentration of 0.1%.
  • the photosensitive resin composition for dry film photoresist was evaluated by combining and coating according to the composition shown in Table 3 and Table 4. First, photopolymerization initiators were dissolved in methyl ethyl ketone (MEK) as a solvent, and then the photopolymerizable compound and the alkali developable binder polymer of Preparation Example 1 were added and mixed for about 1 hour using a mechanical stirrer to obtain a photosensitive resin composition. .
  • the obtained photosensitive resin composition was coated on a 40 ⁇ m PET film using a coating bar.
  • the coated photosensitive resin composition layer was dried using a hot air oven, wherein the drying temperature was 80 ° C., the drying time was 5 minutes, and the thickness of the photosensitive resin composition layer after drying was 40 ⁇ m.
  • the dried film was laminated using a protective film (polyethylene) on the photosensitive resin layer.
  • Table 4 shows the contents of the photopolymerizable compounds carried out in Examples 6 to 13, respectively. Except for the photopolymerizable compound, the remaining composition is the same as in Example 1.
  • the dry film photoresist prepared using the photosensitive resin composition prepared by the above composition was performed by the following process.
  • the dry film photoresist is brush-polished 1.6 mm thick copper clad laminate with a substrate preheat roll temperature of 120 ° C., laminator roll temperature of 115 ° C., roll pressure of 4.0 kgf / cm 2 and roll speed of 2.5 min / m. Lamination was performed using 610i.
  • the dry film photoresist laminated on the copper clad laminate was left to stand for 20 minutes after irradiating ultraviolet rays at an exposure dose of 40 mJ using a Perkin-Elmer OB7120 (parallel light exposure machine) using a photomask for circuit evaluation. Then, development was carried out under the development conditions of the spray injection method with 1.0 wt% aqueous solution of Na 2 CO 3 . The time required for the dry film photoresist of the unexposed portion on the copper clad laminate to be completely washed in the developer was measured using a stopwatch (minimum development time). The product was fixed at a break point of 50% (2 of minimum development time). stomach).
  • the space between the circuit line and the circuit line was measured at 1: 1 and measured with a ZEISS AXIOPHOT Microscope.
  • the dry film photoresist made of the photosensitive resin composition was cut to a size of 40 cm ⁇ 50 cm, the protective film was removed, the exposure was performed at an exposure amount of 20 steps, and then the PET film was peeled off to obtain a cured film.
  • This cured film was immersed in 1 L of plating liquid of copper sulfate / sulfuric acid aqueous solution for 3 days. Electrolytic copper plating was performed on a copper plate for 15 minutes at a current of 2 A using a Halssel test bath (manufactured by the Quality Test Laboratory).
  • the peeling rate was removed by removing the PE film of the photosensitive dry film resist, and then laminated on a copper plate using a heat-compression roller, the photosensitive resin composition was exposed and developed to produce a photocured film having a size of 50mm x 50mm. And it peeled using 3% sodium hydroxide aqueous solution (temperature 50 degreeC).
  • the evaluation of the peeling speed measured the time when the photocured film fell from the copper plate.
  • Examples 1 to 13 was compared to Comparative Examples 1 to 3 while maintaining a similar level of thin line adhesion and resolution, it was found that the peeling rate is fast, the resistance to the plating solution is remarkably excellent.
  • the lamination step could not be performed because the photosensitive resin composition layer was too sticky and did not properly maintain the film form.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The present invention relates to a photoresist resin composition to be contained in a dry film photoresist. More specifically, quality and productivity can be improved in the preparation of a printed circuit board (PCB) since the strip speed is rapid while remarkable fine line adhesion and resolution are maintained, the strip speed is rapid, and resistance against a plating solution is excellent.

Description

드라이 필름 포토 레지스트용 감광성 수지 조성물Photosensitive resin composition for dry film photoresist
본 발명은 드라이 필름 포토 레지스트용 감광성 수지 조성물에 관한 것이다.The present invention relates to a photosensitive resin composition for dry film photoresist.
감광성 수지 조성물은 인쇄회로기판(Printed Circuit Board; PCB)이나 리드 프레임(Lead Frame)에 사용되고 있는 드라이 필름 포토 레지스트(Dry Film Photoresist, DFR), 액상 포토 레지스트(Liquid Photoresist Ink) 등의 형태로 사용되고 있다. The photosensitive resin composition is used in the form of a dry film photoresist (DFR), a liquid photoresist ink, or the like used in a printed circuit board (PCB) or a lead frame. .
현재는 인쇄회로기판(PCB)나 리드 프레임 제조뿐만 아니라, 플라즈마 디스플레이 패널(PDP)의 립 베리어(Rib barrier)나 기타 디스플레이의 ITO 전극, 버스 어드레스(Bus Address) 전극, 블랙 매트릭스(Black Matrix) 제조 등에도 드라이 필름 포토 레지스트가 널리 사용되고 있다. In addition to manufacturing printed circuit boards (PCBs) and lead frames, ITO electrodes, bus address electrodes and black matrix fabrication of rib barriers and other displays of plasma display panels (PDPs) Dry film photoresists are also widely used.
이러한, 일반적으로 드라이 필름 포토레지스트는 동장적층판(Copper Clad Laminates) 상에 적층되는 용도로 많이 사용된다. 이와 관련하여 인쇄회로기판(Printed Circuit Board, PCB)의 제조과정의 일 예로는, PCB의 원판소재인 동장적층판을 라미네이션하기 위해 먼저 전처리 공정을 거친다. 전처리공정은 외층공정에서는 드릴링, 디버링(deburing), 정면 등의 순이며, 내층공정에서는 정면 또는 산세를 거친다. 정면공정에서는 bristle brush 및 jet pumice 공정이 주로 사용되며, 산세는 soft etching 및 5wt% 황산 산세를 거칠 수 있다.In general, dry film photoresists are widely used for lamination on copper clad laminates. In this regard, as an example of manufacturing a printed circuit board (PCB), a pretreatment process is first performed in order to laminate copper clad laminate, which is a raw material of the PCB. The pretreatment process is followed by drilling, deburring, and front in the outer layer process, and the front or pickling in the inner layer process. Bristle brush and jet pumice processes are mainly used in the frontal process, and the pickling may be subjected to soft etching and 5 wt% sulfuric acid pickling.
전처리 공정을 거친 동장적층판에 회로를 형성시키기 위해서는 일반적으로 동장적층판의 구리층 위에 드라이 필름 포토레지스트(이하, DFR이라 함)을 라미네이션한다. 이 공정에서는 라미네이터를 이용하여 DFR의 보호 필름을 벗겨내면서 DFR의 포토레지스트층을 구리 표면 위에 라미네이션시킨다. 일반적으로 라미네이션 속도 0.5~3.5m/min, 온도 100~130℃, 로울러 압력 가열롤압력 10~90psi에서 진행한다.In order to form a circuit on the copper-clad laminate after the pretreatment process, a dry film photoresist (hereinafter referred to as DFR) is generally laminated on the copper layer of the copper-clad laminate. In this process, the photoresist layer of the DFR is laminated onto the copper surface while using a laminator to peel off the protective film of the DFR. Generally lamination speed is 0.5 ~ 3.5m / min, temperature 100 ~ 130 ℃, roller pressure heating roll pressure 10 ~ 90psi.
라미네이션 공정을 거친 인쇄회로기판은 기판의 안정화를 위하여 15분 이상 방치한 후 원하는 회로패턴이 형성된 포토마스크를 이용하여 DFR의 포토레지스트에 대해 노광을 진행한다. 이 과정에서 포토마스크에 자외선을 조사하면 자외선이 조사된 포토레지스트는 조사된 부위에서 함유된 광개지제에 의해 중합이 개시된다. 먼저 초기에는 포토레지스트내의 산소가 소모되고, 다음 활성화된 모노머가 중합되어 가교반응이 일어나고 그 후 많은 양의 모노머가 소모되면서 중합반응이 진행된다. 한편 미노광부위는 가교 반응이 진행되지 않은 상태로 존재하게 된다.After the lamination process, the printed circuit board is left to stand for at least 15 minutes to stabilize the substrate, and then exposed to the photoresist of the DFR using a photomask having a desired circuit pattern. In this process, when the ultraviolet ray is irradiated to the photomask, the photoresist irradiated with the ultraviolet ray is polymerized by the photoantagonist contained at the irradiated portion. Initially, oxygen in the photoresist is consumed, and then the activated monomer is polymerized to cause a crosslinking reaction, and then a large amount of monomer is consumed to proceed with the polymerization reaction. On the other hand, the unexposed portion is present in a state where the crosslinking reaction does not proceed.
다음 포토레지스트의 미노광 부분을 제거하는 현상공정을 진행하는데, 알카리 현상성 DFR인 경우 현상액으로 0.8~1.2wt%의 포타슘카보네이트 및 소듐카보네이트 수용액이 사용된다. 이 공정에서 미노광 부분의 포토레지스트는 현상액내에서 결합제 고분자의 카르복시산과 현상액의 비누화 반응에 의해서 씻겨나가고, 경화된 포토레지스트는 구리표면 위에 잔류하게 된다.Next, a development process of removing unexposed portions of the photoresist is performed. In the case of alkaline developable DFR, an aqueous solution of potassium carbonate and sodium carbonate of 0.8 to 1.2 wt% is used as a developer. In this process, the photoresist of the unexposed portion is washed away by the saponification reaction of the developer polymer with the carboxylic acid of the binder polymer in the developer, and the cured photoresist remains on the copper surface.
다음 내층 및 외층 공정에 따라 다른 공정을 거쳐 회로가 형성된다. 내층공정에서는 부식과 박리공정을 통하여 기판상에 회로가 형성되며 외층공정에서는 도금 및 텐팅공정을 거친 후 에칭과 솔더 박리를 진행하고 소정의 회로를 형성시킨다.Next, a circuit is formed through different processes depending on the inner layer and outer layer processes. In the inner layer process, a circuit is formed on the substrate through a corrosion and peeling process, and in the outer layer process, after the plating and tenting process, etching and solder peeling are performed to form a predetermined circuit.
일반적으로 도금 공정에서 노광된 드라이 필름 포토레지스트는 강산 혹은 강알카리 액 환경에 놓이게 된다. 이러한 이유로 인해 내화학성이 부족할 경우, 드라이 필름 포토레지스트가 동장 적층판으로부터 이탈하는 현상이 발생한다.Generally, the dry film photoresist exposed in the plating process is placed in a strong acid or strong alkaline liquid environment. For this reason, when the chemical resistance is insufficient, the phenomenon that the dry film photoresist is separated from the copper clad laminate occurs.
특히, 드라이 필름 포토레지스트의 감광성 수지 조성물이 도금액을 오염시키면 도금 처리를 가한 기판 외관에 변색이 생기거나 도금 효율이 저하되어 단선의 원인이 될 수 있다. In particular, when the photosensitive resin composition of the dry film photoresist contaminates the plating solution, discoloration may occur on the appearance of the substrate to which the plating treatment is applied, or plating efficiency may be lowered, which may cause disconnection.
또한, 감광성 수지 조성물은 경화 후의 박리 특성이 요구된다. 박리 특성이 부족한 경우, 도금 처리 후의 레지스트 박리 공정에 있어서 미세한 배선 간의 레지스트를 박리하는 것이 곤란해져 박리시간이 늘어나 생산효율이 저하된다.Moreover, the peeling characteristic after hardening of the photosensitive resin composition is calculated | required. When the peeling characteristic is insufficient, it is difficult to peel the resist between fine wirings in the resist stripping step after the plating treatment, and the peeling time increases, and the production efficiency decreases.
본 발명의 주된 목적은 우수한 세선 밀착성과 해상도를 유지하면서도 박리속도가 빠르고, 도금액에 대한 내성이 뛰어난 드라이 필름 포토레지스트용 감광성 수지 조성물을 제공하는데 있다.The main object of the present invention is to provide a photosensitive resin composition for dry film photoresist that has a high peeling speed and excellent resistance to plating solution while maintaining excellent fine wire adhesiveness and resolution.
상기의 목적을 달성하기 위하여, 본 발명의 일 구현예는 [A] 광중합 개시제; [B] 알카리 현상성 바인더 폴리머; 및 [C] 광중합성 화합물을 포함하고, 상기 [C] 광중합 화합물은 하기 화학식 1로 표시되는 화합물을 포함하며, [B] 알카리 현상성 바인더 폴리머에 대한 [C] 광중합성 화합물의 중량비는 1 : 0.1 내지 1인 것을 특징으로 하는 드라이 필름 포토레지스트용 감광성 수지 조성물을 제공한다.In order to achieve the above object, one embodiment of the present invention [A] photopolymerization initiator; [B] alkali developable binder polymers; And [C] a photopolymerizable compound, wherein the [C] photopolymerizable compound includes a compound represented by the following Formula 1, wherein the weight ratio of the [C] photopolymerizable compound to the alkali developable binder polymer is 1: It is 0.1-1, The photosensitive resin composition for dry film photoresists is provided.
<화학식 1><Formula 1>
Figure PCTKR2014007306-appb-I000001
Figure PCTKR2014007306-appb-I000001
상기 화학식 1에서, l+n은 2 또는 3의 정수이고, m은 12 내지 18의 정수이다.In Formula 1, l + n is an integer of 2 or 3, and m is an integer of 12 to 18.
본 발명의 바람직한 일 구현예에서, 상기 감광성 수지 조성물은 고형분 기준으로, 상기 [A] 광중합 개시제는 2 내지 10중량%, 상기 화학식 1로 표시되는 화합물은 5 내지 40중량%를 포함할 수 있다. In a preferred embodiment of the present invention, the photosensitive resin composition is based on solids, the [A] photopolymerization initiator may include 2 to 10% by weight, the compound represented by Formula 1 may include 5 to 40% by weight.
본 발명의 바람직한 일 구현예에서, 상기 감광성 수지 조성물은 고형분 기준으로, 상기 [A] 광중합 개시제는 2 내지 10중량%, 상기 화학식 1로 표시되는 화합물은 10 내지 35중량%를 포함할 수 있다. In a preferred embodiment of the present invention, the photosensitive resin composition is based on solids, the [A] photopolymerization initiator may include 2 to 10% by weight, the compound represented by Formula 1 may include 10 to 35% by weight.
본 발명에 따른 드라이 필름 포토 레지스트용 감광성 수지 조성물은 우수한 세선 밀착성과 해상도를 유지하면서도 박리속도가 빠르고, 도금액에 대한 내성이 뛰어나 PCB 제조에 있어 품질과 생산성을 향상시킬 수 있다.The photosensitive resin composition for a dry film photoresist according to the present invention can be improved in quality and productivity in PCB manufacturing due to the fast peeling speed and excellent resistance to plating solution while maintaining excellent thin wire adhesion and resolution.
다른 식으로 정의되지 않는 한, 본 명세서에서 사용된 모든 기술적 및 과학적 용어들은 본 발명이 속하는 기술분야에서 숙련된 전문가에 의해서 통상적으로 이해되는 것과 동일한 의미를 가진다. 일반적으로, 본 명세서에서 사용된 명명법 은 본 기술분야에서 잘 알려져 있고 통상적으로 사용되는 것이다.Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In general, the nomenclature used herein is well known and commonly used in the art.
본원 명세서 전체에서, 어떤 부분이 어떤 구성 요소를 "포함" 한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성 요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다. Throughout this specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding the other components unless otherwise stated.
본 발명은 [A] 광중합 개시제; [B] 알카리 현상성 바인더 폴리머; 및 [C] 광중합성 화합물을 포함하고, 상기 [C] 광중합 화합물은 하기 화학식 1로 표시되는 화합물을 포함하며, [B] 알카리 현상성 바인더 폴리머에 대한 [C] 광중합성 화합물의 중량비는 1 : 0.1 내지 1인 것을 특징으로 하는 드라이 필름 포토레지스트용 감광성 수지 조성물에 관한 것이다.The invention [A] photopolymerization initiator; [B] alkali developable binder polymers; And [C] a photopolymerizable compound, wherein the [C] photopolymerizable compound includes a compound represented by the following Formula 1, wherein the weight ratio of the [C] photopolymerizable compound to the alkali developable binder polymer is 1: It is 0.1-1, It is related with the photosensitive resin composition for dry film photoresists.
[화학식 1][Formula 1]
Figure PCTKR2014007306-appb-I000002
Figure PCTKR2014007306-appb-I000002
상기 화학식 1에서, l+n은 2 내지 3의 정수이고, m은 12 내지 18의 정수이다.In Formula 1, l + n is an integer of 2 to 3, and m is an integer of 12 to 18.
본 발명에 따른 드라이 필름 포토레지스트용 감광성 수지 조성물은 [C] 광중합성 화합물에 상기 화학식 1로 표시되는 화합물을 적어도 1종 이상 포함함으로써, 우수한 드라이 필름 포토레지스트의 세선 밀착성과 해상도를 유지하면서도 박리속도가 빠르고, 도금액에 대한 뛰어난 내성을 가질 수 있다.The photosensitive resin composition for dry film photoresists according to the present invention comprises at least one or more compounds represented by the formula (1) in the [C] photopolymerizable compound, thereby maintaining a fine line adhesion and resolution of the excellent dry film photoresist while maintaining Is fast and can have excellent resistance to the plating liquid.
이하, 본 발명을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
[A] 광중합 개시제[A] photopolymerization initiator
본 발명에 따른 드라이 필름 포토레지스트용 감광성 수지 조성물에 포함되는 광중합 개시제는 UV 및 기타 radiation에 의해서 광중합성 모노머의 연쇄반응을 개시시키는 물질로서, 드라이 필름 포토레지스트의 경화에 중요한 역할을 한다. The photopolymerization initiator included in the photosensitive resin composition for dry film photoresists according to the present invention is a material that initiates a chain reaction of the photopolymerizable monomer by UV and other radiation, and plays an important role in curing the dry film photoresist.
상기 광중합 개시제로 사용할 수 있는 화합물로는 2-메틸 안트라퀴논, 2-에틸 안트라퀴논 등의 안트라퀴논 유도체; 벤조인 메틸 에테르, 벤조페논, 페난트렌 퀴논, 4,4'-비스-(디메틸아미노)벤조페논 등의 벤조인 유도체를 들 수 있다.As a compound which can be used as said photoinitiator, Anthraquinone derivatives, such as 2-methyl anthraquinone and 2-ethyl anthraquinone; And benzoin derivatives such as benzoin methyl ether, benzophenone, phenanthrene quinone, and 4,4'-bis- (dimethylamino) benzophenone.
이외에도 2,2'-비스(2-클로로페닐)-4,4'-5,5'-테트라페닐비스이미다졸, 1-히드록시시클로헥실페닐케톤, 2,2-디메톡시-1,2-디페닐에탄-1-온, 2-메틸-1-[4-(메틸티오)페닐]-2-모르폴리노프로판-1-온, 2-벤질-2-디메틸아미노-1-[4-모르폴리노페닐] 부탄-1-온, 2-히드록시-2-메틸-1-페닐프로판-1-온, 2,4,6-트리메틸벤조일디페닐포스핀옥사이드, 1-[4-(2-히드록시메톡시)페닐]-2-히드록시-2-메틸프로판-1-온, 2,4-디에틸티옥산톤, 2-클로로티옥산톤, 2,4-디메틸티옥산톤, 3,3-디메틸-4-메톡시벤조페논, 벤조페논, 1-클로로-4-프로폭시티옥산톤, 1-(4-이소프로필페닐)2-히드록시-2-메틸프로판-1-온, 1-(4-도데실페닐)-2하이드록시-2-메틸프로판-1-온, 4-벤조일-4'-메틸디메틸설파이드, 4-디메틸아미노벤조산, 메틸 4-디메틸아미노벤조에이트, 에틸 4-디메틸아미노벤조에이트, 부틸 4-디메틸아미노벤조에이트, 2-에틸헥실 4-디메틸아미노벤조에이트, 2-이소아밀 4-디메틸아미노벤조에이트, 2,2-디에톡시아세토페논, 벤질케톤 디메틸아세탈, 벤질케톤 β-메톡시 디에틸아세탈, 1-페닐-1,2-프로필디옥심-o,o'-(2-카르보닐)에톡시에테르, 메틸 o-벤조일벤조에이트, 비스[4-디메틸아미노페닐)케톤, 4,4'-비스(디에틸아미노)벤조페논, 4,4'-디클로로벤조페논, 벤질, 벤조인, 메톡시벤조인, 에톡시벤조인, 이소프로폭시벤조인, n-부톡시벤조인, 이소부톡시벤조인, tert-부톡시벤조인, p-디메틸아미노아세토페논, p-tert-부틸트리클로로아세토페논, p-tert-부틸디클로로아세토페논, 티옥산톤, 2-메틸티옥산톤, 2-이소프로필티옥산톤, 디벤조수베론, α,α-디클로로-4-페녹시아세토페논, 펜틸 4-디메틸아미노벤조에이트 중에서 선택된 화합물을 광중합 개시제로 사용할 수 있으나, 이에 한정되는 것은 아니다.In addition to 2,2'-bis (2-chlorophenyl) -4,4'-5,5'-tetraphenylbisimidazole, 1-hydroxycyclohexylphenyl ketone, 2,2-dimethoxy-1,2- Diphenylethan-1-one, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane-1-one, 2-benzyl-2-dimethylamino-1- [4-morph Polynophenyl] butan-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, 1- [4- (2- Hydroxymethoxy) phenyl] -2-hydroxy-2-methylpropan-1-one, 2,4-diethyl thioxanthone, 2-chlorothioxanthone, 2,4-dimethyl thioxanthone, 3, 3-dimethyl-4-methoxybenzophenone, benzophenone, 1-chloro-4-propoxycyxanthone, 1- (4-isopropylphenyl) 2-hydroxy-2-methylpropan-1-one, 1 -(4-dodecylphenyl) -2hydroxy-2-methylpropan-1-one, 4-benzoyl-4'-methyldimethylsulfide, 4-dimethylaminobenzoic acid, methyl 4-dimethylaminobenzoate, ethyl 4- Dimethylaminobenzoate, Butyl 4-dimethylaminoben Zoate, 2-ethylhexyl 4-dimethylaminobenzoate, 2-isoamyl 4-dimethylaminobenzoate, 2,2-diethoxyacetophenone, benzylketone dimethylacetal, benzylketone β-methoxy diethylacetal, 1 -Phenyl-1,2-propyldioxime-o, o '-(2-carbonyl) ethoxyether, methyl o-benzoylbenzoate, bis [4-dimethylaminophenyl) ketone, 4,4'-bis ( Diethylamino) benzophenone, 4,4'-dichlorobenzophenone, benzyl, benzoin, methoxybenzoin, ethoxybenzoin, isopropoxybenzoin, n-butoxybenzoin, isobutoxybenzoin, tert -Butoxybenzoin, p-dimethylaminoacetophenone, p-tert-butyltrichloroacetophenone, p-tert-butyldichloroacetophenone, thioxanthone, 2-methyl thioxanthone, 2-isopropyl thioxanthone , A compound selected from dibenzosuberon, α, α-dichloro-4-phenoxyacetophenone, pentyl 4-dimethylaminobenzoate may be used as a photopolymerization initiator, In it not limited.
상기 광중합 개시제의 함량은 고형분 기준으로, 감광성 수지 조성물 총 중량에 대하여 2 내지 10중량%로 포함된다. 상기 광중합 개시제의 함량이 상기 범위 내에 있는 경우 충분한 감도를 얻을 수 있다. The content of the photopolymerization initiator is included in 2 to 10% by weight based on the total weight of the photosensitive resin composition. Sufficient sensitivity can be obtained when the content of the photopolymerization initiator is within the above range.
[B] 알카리 현상성 바인더 폴리머[B] Alkaline Developable Binder Polymer
본 발명의 알카리 현상성 바인더 폴리머는 (메타)아크릴산과 (메타)아크릴산에스테르의 공중합체이다. 구체적으로는, 메틸 아크릴레이트, 메틸 메타크릴레이트, 에틸아크릴레이트, 메틸 메타크릴레이트, 부틸 아크릴레이트, 부틸 메타크릴레이트, 아크릴산, 메타크릴산, 2-히드록시 에틸 아크릴레이트, 2-히드록시 에틸 메타크릴레이트, 2-히드록시 프로필 아크릴레이트, 2-히드록시 프로필 메타크릴레이트, 아크릴아마이드, 메타크릴아마이드, 스타이렌, α-메틸 스타이렌으로 합성된 선형 아크릴산 고분자 중에서 선택된 둘 이상의 모노머들의 공중합을 통해 얻어진 공중합 아크릴산 고분자이다.The alkali developable binder polymer of the present invention is a copolymer of (meth) acrylic acid and (meth) acrylic acid ester. Specifically, methyl acrylate, methyl methacrylate, ethyl acrylate, methyl methacrylate, butyl acrylate, butyl methacrylate, acrylic acid, methacrylic acid, 2-hydroxy ethyl acrylate, 2-hydroxy ethyl Copolymerization of two or more monomers selected from linear acrylic acid polymers synthesized with methacrylate, 2-hydroxy propyl acrylate, 2-hydroxy propyl methacrylate, acrylamide, methacrylamide, styrene, α-methyl styrene Copolymer acrylic polymer obtained through.
본 발명의 알카리 현상성 바인더 폴리머는 드라이 필름 포토레지스트의 코팅성, 추종성, 그리고 회로형성 후 레지스트 자체의 기계적 강도를 고려해서 중량평균분자량이 30,000 내지 150,000이며, 유리전이온도는 20 내지 150℃인 고분자 화합물로서, 알카리 현상성 바인더 폴리머에 대한 광중합성 화합물의 중량비가 1 : 0.1 내지 1인 함량으로 감광성 수지 조성물에 포함되는 것이 바람직하다. 상기 알카리 현상성 바인더 폴리머가 상기 광중합성 화합물의 중량비를 만족하는 경우 회로형성 후, 세선 밀착력을 강화시키는 효과를 얻을 수 있다.The alkali developable binder polymer of the present invention has a weight average molecular weight of 30,000 to 150,000 and a glass transition temperature of 20 to 150 ° C. in consideration of the coating property of the dry film photoresist, the followability, and the mechanical strength of the resist itself after circuit formation. As the compound, it is preferable that the weight ratio of the photopolymerizable compound to the alkali developable binder polymer is included in the photosensitive resin composition in an amount of 1: 0.1 to 1. When the alkali developable binder polymer satisfies the weight ratio of the photopolymerizable compound, after the circuit formation, it is possible to obtain an effect of strengthening the fine wire adhesion.
이상 또는 이하에서 중량평균분자량은 Waters 450 GPC를 이용하여 폴리스타이렌을 스텐다드로 측정하였고, 컬럼은 Shodex 105, 104, 103을 사용하였으며, 유리전이온도는 Perkin Elmer사의 DSC 7을 이용하여 측정하였다. Above or below, the weight average molecular weight was measured by using polystyrene in standard using Waters 450 GPC, Shodex 10 5 , 10 4 , 10 3 , and glass transition temperature was measured using DSC 7 of Perkin Elmer. .
[C] 광중합성 화합물[C] photopolymerizable compounds
본 발명의 광중합성 화합물은 하기 화학식 1로 표시되는 화합물을 단독으로 사용하거나, 또는 말단에 적어도 2 개 이상의 에틸렌기를 포함하는 단량체와 함께 사용할 수 있다.The photopolymerizable compound of the present invention may be used alone or in combination with a monomer including at least two ethylene groups at the terminal.
[화학식 1][Formula 1]
Figure PCTKR2014007306-appb-I000003
Figure PCTKR2014007306-appb-I000003
상기 화학식 1에서, l+n은 2 또는 3의 정수이고, m은 12 내지 18의 정수이다.In Formula 1, l + n is an integer of 2 or 3, and m is an integer of 12 to 18.
상기 화학식 1로 표시되는 화합물은 감광성 수지 조성물의 소수성을 향상시켜 현상액 및 도금액에 대한 내성을 현격히 증가시키고, 경화막의 박리 시간을 단축시킬 수 있다. 감광성 수지 조성물의 도금액에 대한 내성이 우수하다는 것은 도금액을 오염시키지 않아서 도금 외관의 형태나 색깔에 미치는 영향이 적다는 의미이다.The compound represented by Formula 1 may improve hydrophobicity of the photosensitive resin composition to significantly increase resistance to a developer and a plating solution, and may shorten a peeling time of the cured film. The excellent resistance to the plating liquid of the photosensitive resin composition means that the plating liquid is not contaminated and thus the effect on the form and color of the plating appearance is small.
본 발명에서는 상기 화학식 1로 표시되는 화합물을 감광성 수지 조성물 고형분 총 중량에 대하여 5 ~ 40중량%로 포함하는 것이 바람직하며, 더욱 바람직하게는 10 ~ 35중량%일 수 있다. In the present invention, it is preferable to include the compound represented by Formula 1 in 5 to 40% by weight based on the total weight of the photosensitive resin composition solids, more preferably 10 to 35% by weight.
만일 상기 화학식 1로 표시되는 화합물의 함량이 감광성 수지 조성물 고형분 총 중량에 대하여, 5중량% 미만일 경우, 화학식 1로 표시되는 화합물의 첨가에 따른 효과가 미흡하고, 40중량%를 초과할 경우에는 박리시간이 급격히 증가하는 문제점이 발생될 수 있다.If the content of the compound represented by the formula (1) is less than 5% by weight relative to the total weight of the photosensitive resin composition solids, the effect of the addition of the compound represented by the formula (1) is insufficient, and when the content exceeds 40% by weight The problem that time increases rapidly may occur.
본 발명의 광중합성 화합물은 상기 화학식 1로 표시되는 화합물 이외에도 말단에 적어도 2개의 에틸렌기를 포함하는 단량체를 포함할 수 있다.The photopolymerizable compound of the present invention may include a monomer including at least two ethylene groups at the terminal in addition to the compound represented by Chemical Formula 1.
상기 말단에 적어도 2개의 에틸렌기를 포함하는 단량체로는 에틸렌글리콜디메타크릴레이트(ethylene glycol dimethacrylate), 디에틸렌글리콜디메타크릴레이트(diethylene glycol dimethacrylate), 테트라에틸렌글리콜디메타크릴레이트(tetraethylene glycol dimethacrylate), 프로필렌글리콜디메타크릴레이트(propylene glycol dimethacrylate), 폴리프로필렌글리콜디메타크릴레이트(polypropylene glycol dimethacrylate), 부틸렌글리콜디메타크릴레이트(butylene glycol dimethacrylate), 네오펜틸글리콜디메타크릴레이트(neopentyl glycol dimethacrylate), 1,6-헥산글리콜디메타크릴레이트(1,6-hexane glycol dimethacrylate), 트리메틸올프로판 트리메타크릴레이트(trimethyolpropane trimethacrylate), 트리메틸올프로판 트리아크릴레이트(trimethyolpropane triacrylate), 글리세린 디메타크릴레이트(glycerin dimethacrylate), 펜타에리트리톨 디메타크릴레이트(pentaerythritol dimethacrylate), 펜타에리트리톨 트리메타크릴레이트(pentaerythritol trimethacrylate), 디펜타에리트리톨 펜타메타크릴레이트(dipentaerythritol pentamethacrylate), 2,2-비스(4-메타크릴옥시디에톡시페닐)프로판(2,2-bis(4-methacryloxydiethoxyphenyl)propane), 2,2-비스(4-메타크릴옥시폴리에톡시페닐)프로판(2,2-bis(4-methacryloxypolyethoxyphenyl)propane), 2-히드록시-3-메타크릴로일옥시프로필 메타크릴레이트(2-hydroxy-3-methacryloyloxypropyl methacrylate), 에틸렌글리콜 디글리시딜에테르 디메타크릴레이트(ethylene glycol diglycidyl ether dimethacrylate), 디에틸렌글리콜 디글리시딜에테르 디메타크릴레이트(diethylene glycol diglycidyl ether dimethacrylate), 프탈산 디글리시딜에스테르 디메타크릴레이트(phthalic acid diglycidyl ester dimethacrylate), 글리세린 폴리글리시딜에테르 폴리메타크릴레이트(glycerin polyglycidyl ether polymethacrylate), 우레탄기를 함유한 다관능 (메트)아크릴레이트 등을 들 수 있다.Monomers containing at least two ethylene groups at the terminals include ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, and tetraethylene glycol dimethacrylate. , Propylene glycol dimethacrylate, propylene glycol dimethacrylate, polypropylene glycol dimethacrylate, butylene glycol dimethacrylate, neopentyl glycol dimethacrylate (neopentyl glycol dimethacrylate) ), 1,6-hexane glycol dimethacrylate (1,6-hexane glycol dimethacrylate), trimethylolpropane trimethacrylate, trimethyolpropane triacrylate, glycerin dimethacrylate (glycerin dimethacrylate), pentaerythritol dimetha Pentaerythritol dimethacrylate, pentaerythritol trimethacrylate, dipentaerythritol pentamethacrylate, 2,2-bis (4-methacryloxydiethoxyphenyl) propane , 2-bis (4-methacryloxydiethoxyphenyl) propane), 2,2-bis (4-methacryloxypolyethoxyphenyl) propane (2,2-bis (4-methacryloxypolyethoxyphenyl) propane), 2-hydroxy-3- Methacryloyloxypropyl methacrylate (2-hydroxy-3-methacryloyloxypropyl methacrylate), ethylene glycol diglycidyl ether dimethacrylate, ethylene glycol diglycidyl ether dimethacrylate, diethylene glycol diglycidyl ether dimethacryl Diethylene glycol diglycidyl ether dimethacrylate, phthalic acid diglycidyl ester dimethacrylate, glycerin polyglycidyl ether polymethacrylate lycidyl ether polymethacrylate), polyfunctional (meth) acrylate containing a urethane group, etc. are mentioned.
또한, 상기 [B] 알카리 현상성 바인더 폴리머에 대한 [C] 광중합성 화합물의 중량비는 1 : 0.1 내지 1인 것이 바람직하다. 상기 광중합성 화합물의 중량비가 상기 범위 내에 있는 경우 광감도와 해상도, 밀착성 등을 강화시키는 효과를 얻을 수 있다. Moreover, it is preferable that the weight ratio of the [C] photopolymerizable compound with respect to the said [B] alkali developable binder polymer is 1: 0.1-1. When the weight ratio of the photopolymerizable compound is within the above range, an effect of enhancing light sensitivity, resolution, adhesion, and the like can be obtained.
[D] 용제 및 기타 첨가제[D] solvents and other additives
본 발명의 감광성 수지 조성물의 용제로는 일반적으로 메틸에틸케톤(MEK), 메탄올, THF, 톨루엔, 아세톤 중에서 선택된 것을 사용하며 상기 용제로 특별히 한정되어지는 것은 아니며, 함량 역시, 광중합 개시제, 알카리 현상성 바인더 폴리머 및 광중합성 화합물의 함량에 따라 조절하여 함유될 수 있다.As a solvent of the photosensitive resin composition of the present invention, a solvent selected from methyl ethyl ketone (MEK), methanol, THF, toluene and acetone is generally used and is not particularly limited to the above solvent. The content is also a photopolymerization initiator and alkali developability. It can be contained according to the content of the binder polymer and the photopolymerizable compound.
또한, 본 발명의 감광성 수지 조성물은 필요에 따라 기타 첨가제를 더 포함할 수 있는데, 기타 첨가제로는 가소제로서 프탈산 에스테르 형태의 디부틸 프탈레이트, 디헵틸 프탈레이트, 디옥틸 프탈레이트, 디알릴 프탈레이트; 글리콜 에스테르 형태인 트리에틸렌 글리콜 디아세테이트, 테트라에틸렌 글리콜 디아세테이트; 산 아미드 형태인 p-톨루엔 설폰아미드, 벤젠설폰아미드, n-부틸벤젠설폰아미드; 트리페닐 포스페이트 등을 사용할 수 있다. In addition, the photosensitive resin composition of the present invention may further include other additives as necessary, and other additives include, as plasticizers, dibutyl phthalate, diheptyl phthalate, dioctyl phthalate, diallyl phthalate in the form of phthalic acid ester; Triethylene glycol diacetate, tetraethylene glycol diacetate in the glycol ester form; P-toluene sulfonamide, benzenesulfonamide, n-butylbenzenesulfonamide in acid amide form; Triphenyl phosphate and the like can be used.
본 발명에 있어서 감광성 수지 조성물의 취급성을 향상시키기 위해서 루이코 염료나 착색 물질을 넣을 수도 있다. 상기 루이코 염료로는, 트리스(4-디메틸아미노-2-메틸페닐)메탄, 트리스(4-디메틸아미노-2메틸페닐)메탄, 플루오란 염료 등을 들 수 있다. 그중에서도, 루이코 크리스탈 바이올렛을 사용한 경우, 콘트라스트가 양호하여 바람직하다. 루이코 염료를 함유하는 경우의 함유량은 감광성 수지 조성물 중에 0.1 내지 10 중량%가 바람직하다. 콘트라스트의 발현이라는 관점에서, 0.1중량% 이상이 바람직하고, 보존 안정성을 유지한다는 관점에서는 10 중량% 이하가 바람직하다.In order to improve the handleability of the photosensitive resin composition in this invention, you may add a leuco dye and a coloring substance. Examples of the leuco dyes include tris (4-dimethylamino-2-methylphenyl) methane, tris (4-dimethylamino-2methylphenyl) methane, fluorane dye and the like. Especially, when a leuco crystal violet is used, contrast is favorable and preferable. As for content in the case of containing a leuco dye, 0.1-10 weight% is preferable in the photosensitive resin composition. 0.1 weight% or more is preferable from a viewpoint of contrast expression, and 10 weight% or less is preferable from a viewpoint of maintaining storage stability.
착색 물질로는, 예를 들어 톨루엔술폰산1수화물, 푸크신, 프탈로시아닌 그린, 오라민 염기, 파라마젠타, 크리스탈 바이올렛, 메틸 오렌지, 나일 블루 2B, 빅토리아 블루, 말라카이트 그린, 다이아몬드 그린, 베이직 블루 20 등을 들 수 있다. 상기 착색 물질을 함유하는 경우의 첨가량은 감광성 수지 조성물 중에 0.001 내지 1중량%가 바람직하다. 0.001중량% 이상의 함량에서는 취급성 향상이라는 효과가 있고, 1중량% 이하의 함량에서는 보존 안정성을 유지한다는 효과가 있다.Examples of the coloring substance include toluenesulfonic acid monohydrate, fuxin, phthalocyanine green, oramin base, paramagenta, crystal violet, methyl orange, nile blue 2B, victorian blue, malachite green, diamond green, basic blue 20, and the like. Can be mentioned. As for the addition amount in the case of containing the said coloring substance, 0.001 to 1 weight% is preferable in the photosensitive resin composition. The content of 0.001% by weight or more has the effect of improving handleability, and the content of 1% by weight or less has the effect of maintaining storage stability.
그 외에 기타 첨가제로는 열중합 방지제, 염료, 변색제(discoloring agent), 밀착력 촉진제 등을 더 포함할 수 있다. In addition, other additives may further include a thermal polymerization inhibitor, a dye, a discoloring agent, an adhesion promoter, and the like.
본 발명에서는 상기와 같은 조성으로 된 감광성 수지 조성물은 드라이 필름 포토레지스트용 감광성 수지 조성물로 제조할 수 있으며, 폴리에틸렌테레프탈레이트와 같은 통상의 기재 필름 위에 통상의 코팅 방법을 이용하여 두께 5 내지 200㎛로 감광성 수지층을 코팅시킨 다음, 건조시키고, 상기 건조된 감광성 수지층은 상면에 폴리에틸렌과 같은 통상의 보호 필름을 이용하여 라미네이션시켜 드라이 필름을 제조할 수 있다. 이와 같이 제조된 드라이 필름은 노광, 현상시켜 각각의 물성을 평가하는 방법으로 수행한다. In the present invention, the photosensitive resin composition having the composition as described above may be prepared as a photosensitive resin composition for dry film photoresist, and has a thickness of 5 to 200 μm using a conventional coating method on a conventional base film such as polyethylene terephthalate. The photosensitive resin layer may be coated and then dried, and the dried photosensitive resin layer may be laminated on an upper surface thereof using a conventional protective film such as polyethylene to prepare a dry film. The dry film thus prepared is subjected to exposure and development by a method of evaluating the respective physical properties.
이하 본 발명의 바람직한 실시예 및 비교예를 설명한다. 그러나 하기한 실시예는 본 발명의 바람직한 일 실시예일 뿐, 본 발명이 하기한 실시예에 한정되는 것은 아니다. Hereinafter, preferred examples and comparative examples of the present invention will be described. However, the following examples are only preferred embodiments of the present invention, and the present invention is not limited to the following examples.
[제조예 1][Production Example 1]
4구 둥근바닥 플라스크에 기계식 교반기(mechanical stirrer)와 환류장치를 장착한 다음, 질소로 플라스크 내부를 퍼지하였다. 상기 질소로 퍼지된 플라스크에 MEK(Methyl Ethyl Ketone) 90g 및 PGMEA(Propylene Glycol Monomehtyl Ether Acetate) 10g를 투입한 다음, 아조비스이소부티로니트릴(azobisisobutyronitrile, AIBN) 0.8g을 투입하여 완전히 용해시켰다. 여기에 메틸메타크릴산 20g, 메틸메타크릴레이트 70g 및 스티렌모노머 10g 단량체 혼합물을 투입하고, 80℃까지 승온한 다음 6시간 동안 중합하여 알칼리 현상성 바인더 폴리머를 제조하였다.A four-neck round bottom flask was equipped with a mechanical stirrer and reflux, and then purged inside the flask with nitrogen. 90 g of MEK (Methyl Ethyl Ketone) and 10 g of Propylene Glycol Monomehtyl Ether Acetate (PGMEA) were added to the flask purged with nitrogen, followed by 0.8 g of azobisisobutyronitrile (AIBN) to completely dissolve the flask. 20 g of methyl methacrylate, 70 g of methyl methacrylate, and 10 g of a monomer of styrene monomer were added thereto, and the temperature was raised to 80 ° C., followed by polymerization for 6 hours to prepare an alkali developable binder polymer.
[제조예 2 내지 4][Production Examples 2 to 4]
본 발명의 화학식 1로 표시되는 화합물을 아래와 같은 방법으로 제조하였다. The compound represented by Formula 1 of the present invention was prepared by the following method.
1) Synthesis of PEO-PPO-PEO block copolymer1) Synthesis of PEO-PPO-PEO block copolymer
오토클레이브에 poly(propylene glycol) [40mmol]과 염기성 촉매로 KOH [6g]를 넣고 N2 분위기 하에서 120℃로 가열한 후, ethylene oxide solution [제조예2~3은 132mL, 제조예 4는 88mL]를 한방울씩 적가하여 PEO-PPO-PEO block copolymer를 합성하였으며, 반응이 완료된 후 감압여과하여 용매와 물을 제거하였다. Put KOH [6g] with poly (propylene glycol) [40 mmol] and a basic catalyst in an autoclave, heat to 120 ° C. under N2 atmosphere, and then prepare an ethylene oxide solution [132 mL for Production Examples 2 to 3, 88 mL for Preparation Example 4]. Dropwise dropwise to synthesize the PEO-PPO-PEO block copolymer, and after completion of the reaction to remove the solvent and water by filtration under reduced pressure.
하기 표 1은 제조예 2 내지 4에서 사용된 poly(propylene glycol)을 나타낸 것이다. Table 1 shows the poly (propylene glycol) used in Preparation Examples 2 to 4.
표 1
poly(propylene glycol)의 종류
Figure PCTKR2014007306-appb-I000004
제조예 2 a=18
제조예 3 a=15
제조예 4 a=12
Table 1
Type of poly (propylene glycol)
Figure PCTKR2014007306-appb-I000004
Preparation Example 2 a = 18
Preparation Example 3 a = 15
Preparation Example 4 a = 12
2) Synthesis of Pluronic Diacrylate2) Synthesis of Pluronic Diacrylate
깔대기와 질소주입구가 설치된 round-bottomed flask를 ice bath에 넣고, 이 round-bottomed flask에 앞서 합성한 PEO-PPO-PEO block copolymer (30 mmol)과 triethylamine (71.4 mmol, 7.22 g)과 methylene chloride (150 mL)를 넣었다. 그리고, methacryloyl chloride (73.78 mmol, 7.71 g)을 한방울씩 3시간에 걸쳐 적가하였고, 추가로 20시간을 반응하도록 두었다. 그 동안, 플라스크 내부는 0℃~25℃의 온도로 유지하면서 계속해서 질소를 purge해주었다. 염 형태의 부산물을 제거하기 위해서 감압여과하고, 동결건조하여 물을 제거하였다. Place a round-bottomed flask equipped with a funnel and nitrogen inlet in an ice bath, and then synthesize the PEO-PPO-PEO block copolymer (30 mmol), triethylamine (71.4 mmol, 7.22 g) and methylene chloride (150). mL) was added. Then, methacryloyl chloride (73.78 mmol, 7.71 g) was added dropwise over 3 hours, and the reaction was allowed to react for another 20 hours. In the meantime, the inside of the flask continued to purge nitrogen, maintaining the temperature of 0 degreeC-25 degreeC. Filtration under reduced pressure to remove by-products in salt form and lyophilized to remove water.
하기 표 2는 제조예 2 내지 4에 따라 제조된 화학식 1로 표시되는 화합물을 나타낸 것이다. Table 2 below shows the compounds represented by Formula 1 prepared according to Preparation Examples 2 to 4.
표 2
Figure PCTKR2014007306-appb-I000005
제조예 2 m=18, l+n=3 (Mw=1300)
제조예 3 m=15, l+n=3 (Mw=1150)
제조예 4 m=15, l+n=3 (Mw=1150)
TABLE 2
Figure PCTKR2014007306-appb-I000005
Preparation Example 2 m = 18, l + n = 3 (Mw = 1300)
Preparation Example 3 m = 15, l + n = 3 (Mw = 1150)
Preparation Example 4 m = 15, l + n = 3 (Mw = 1150)
3) 제조예 2 내지 4에 따라 제조된 화합물의 분자량은 아래와 같이 GPC를 통해 측정하였다. 3) The molecular weight of the compound prepared according to Preparation Examples 2 to 4 was measured by GPC as follows.
<GPC를 통한 분자량 측정 방법><Method of measuring molecular weight through GPC>
겔 투과 크로마토그래피 (GPC) (Waters Alliance e2695 + Waters 2414 RI Detector)에 의해 폴리스티렌 환산 중량평균분자량(Mw)을 구하였다. 측정하는 중합체는 0.2%의 농도가 되도록 테트라히드로푸란에 녹인 후, 0.45μm PTFE syringe filter로 여과하여 GPC에 10μL를 주입하였다. GPC의 이동상은 테트라히드로푸란을사용하고, 1.0mL/분의 유속으로 유입하였으며, 분석은 30℃에서 수행하였다. 컬럼은 에이질런트사 Plgel Mixed D를 직렬로 두개 연결하였다. 검출기로는 RI 검출기를 이용하여 40℃에서 측정하였다. 검량선은 폴리스티렌 Standard를 0.1%농도로 THF에 녹여 주입하여 검량선을 작성하였다.Polystyrene reduced weight average molecular weight (Mw) was determined by gel permeation chromatography (GPC) (Waters Alliance e2695 + Waters 2414 RI Detector). The polymer to be measured was dissolved in tetrahydrofuran to a concentration of 0.2%, filtered through a 0.45 μm PTFE syringe filter, and 10 μL was injected into the GPC. The mobile phase of GPC used tetrahydrofuran and was introduced at a flow rate of 1.0 mL / min and the analysis was performed at 30 ° C. The column connected two Agilent Plgel Mixed D in series. As a detector, it measured at 40 degreeC using the RI detector. The calibration curve was prepared by dissolving polystyrene standard in THF at a concentration of 0.1%.
[실시예 1 내지 13 및 비교예 1 내지 3][Examples 1 to 13 and Comparative Examples 1 to 3]
드라이 필름 포토레지스트용 감광성 수지 조성물은 하기 표 3 및 표 4와 같은 조성에 따라 조합 및 코팅하여 평가하였다. 우선 광중합 개시제류들을 용제인 메틸에틸케톤(MEK)에 녹인 후, 광중합성 화합물과 제조예 1의 알칼리 현상성 바인더 폴리머를 첨가하여 기계적 교반기를 이용하여 약 1시간 정도 혼합하여 감광성 수지 조성물을 수득하였다. 상기 수득된 감광성 수지 조성물을 40㎛의 PET 필름 위에 코팅 바(bar)를 이용하여 코팅시켰다. 코팅된 감광성 수지 조성물층은 열풍오븐을 이용하여 건조시키는데, 이때 건조 온도는 80℃이고, 건조 시간은 5분이며, 건조후 감광성 수지 조성물층 두께는 40㎛이였다. 건조가 완료된 필름은 감광성 수지층 위에 보호필름(폴리에틸렌)를 이용하여 라미네이션하였다.The photosensitive resin composition for dry film photoresist was evaluated by combining and coating according to the composition shown in Table 3 and Table 4. First, photopolymerization initiators were dissolved in methyl ethyl ketone (MEK) as a solvent, and then the photopolymerizable compound and the alkali developable binder polymer of Preparation Example 1 were added and mixed for about 1 hour using a mechanical stirrer to obtain a photosensitive resin composition. . The obtained photosensitive resin composition was coated on a 40 μm PET film using a coating bar. The coated photosensitive resin composition layer was dried using a hot air oven, wherein the drying temperature was 80 ° C., the drying time was 5 minutes, and the thickness of the photosensitive resin composition layer after drying was 40 μm. The dried film was laminated using a protective film (polyethylene) on the photosensitive resin layer.
표 3
성분(함량 중량%) 실시예 1 실시예 2 실시예 3 실시예4 실시예5 비교예 1 비교예 2 비교예3
광중합 개시제 EAB(1) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
BCIM(2) 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5
알카리 현상성 바인더 폴리머* 52 52 52 52 52 52 52 37
광중합성 화합물 제조예 2(3) 25 15 15 10 5 - - 40
M-2053(4) 10 25
BPE-500(5) 10 15 20 25
첨가제 톨루엔술포산1수화물 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
루이코 크리스탈 바이올렛(6) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
다이아몬드 그린 GH(7) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
용제 메틸에틸케톤(MEK) 20 20 20 20 20 20 20 20
(주)(1) EAB: 4,4-(비스디에틸아미노)벤조페논(Aldrich Chemical)(2) BCIM: 2,2-비스-(2-클로로페틸-4,5,4,5-테트라페닐비스이미다졸(Aldrich Chemical)*메틸메타크릴산/메틸메타크릴레이트/스타이렌모너머 공중합체(20:70:10 중량비) 중량평균분자량 60,000 (3) 제조예 2:본 발명의 화학식 1에서, l+n는 3이며, m는 18임(4) M-2053: 본 발명의 화학식 1에서, l+n는 6이며, m는 12임 (미원스페셜티케미칼)(5) BPE-500: 2,2-bis[4-(methacryloxypolyethoxy)phenyl]propane (신나카무라)(6) 루이코 크리스탈 바이올렛: 일본 Hodogaya Co.(7) 다이아몬드 그린 GH: 일본 Hodogaya Co.
TABLE 3
Component (wt%) Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 Comparative Example 3
Photopolymerization initiator EAB (1) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
BCIM (2) 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5
Alkaline Developable Binder Polymer * 52 52 52 52 52 52 52 37
Photopolymerizable compound Preparation Example 2 (3) 25 15 15 10 5 - - 40
M-2053 (4) 10 25
BPE-500 (5) 10 15 20 25
additive Toluene Sulfoic Acid Monohydrate 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
Ruico Crystal Violet (6) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
Diamond Green GH (7) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
solvent Methyl ethyl ketone (MEK) 20 20 20 20 20 20 20 20
(1) EAB: 4,4- (bisdiethylamino) benzophenone (Aldrich Chemical) (2) BCIM: 2,2-bis- (2-chlorofetyl-4,5,4,5-tetra Phenylbisimidazole (Aldrich Chemical) * methylmethacrylic acid / methylmethacrylate / styrene monomer (20:70:10 weight ratio) Weight average molecular weight 60,000 (3) Preparation Example 2: In Chemical Formula 1 of the present invention, l + n is 3, m is 18 (4) M-2053: In the general formula (1) of the present invention, l + n is 6 and m is 12 (mione specialty chemical) (5) BPE-500: 2, 2-bis [4- (methacryloxypolyethoxy) phenyl] propane (Shinkakamura) (6) Ruiko Crystal Violet: Japan Hodogaya Co. (7) Diamond Green GH: Japan Hodogaya Co.
하기 표 4는 실시예 6 내지 13에서 실시한 광중합성 화합물의 함량을 각각 나타낸 것이다. 상기 광중합성 화합물을 제외한 나머지 조성은 실시예 1과 같다. Table 4 shows the contents of the photopolymerizable compounds carried out in Examples 6 to 13, respectively. Except for the photopolymerizable compound, the remaining composition is the same as in Example 1.
표 4
광중합성 화합물 실시예(함량 중량%)
6 7 8 9 10 11 12 13
제조예 3 25  15 15 10
제조예 4         25 15 15 10
M-2053     10   10
BEP-500 10   15 10 15
Table 4
Photopolymerizable compound Example (content% by weight)
6 7 8 9 10 11 12 13
Preparation Example 3 25 15 15 10
Preparation Example 4 25 15 15 10
M-2053 10 10
BEP-500 10 15 10 15
상기 조성에 의해 제조된 감광성 수지 조성물을 사용하여 제조된 드라이 필름 포토레지스트는 다음과 같은 공정으로 수행하였다.The dry film photoresist prepared using the photosensitive resin composition prepared by the above composition was performed by the following process.
<라미네이션><Lamination>
드라이 필름 포토레지스트를 브러시(brush) 연마 처리된 1.6mm 두께의 동장적층판에 기판 예열롤 온도 120℃, 라미네이터 롤 온도 115℃, 롤 압력 4.0kgf/㎠, 롤 속도 2.5min/m의 조건으로 HAKUTO MACH 610i를 이용하여 라미네이션을 수행하였다. The dry film photoresist is brush-polished 1.6 mm thick copper clad laminate with a substrate preheat roll temperature of 120 ° C., laminator roll temperature of 115 ° C., roll pressure of 4.0 kgf / cm 2 and roll speed of 2.5 min / m. Lamination was performed using 610i.
<현상 및 해상도><Development and Resolution>
동장적층판에 라미네이션한 드라이 필름 포토레지스트를 회로평가용 포토마스크를 사용하여 Perkin-ElmerTM OB7120(평행광 노광기)을 이용하여 40mJ의 노광량으로 자외선을 조사한 후 20분 방치하였다. 그 후 Na2CO3 1.0wt% 수용액으로 Spray 분사 방식의 현상조건으로 현상을 실시하였다. 동장 적층판 상의 미노광 부위의 드라이 필름 포토레지스트가 현상액에 완전히 씻겨지기까지 소요된 시간을 초시계를 이용하여 측정하였으며(최소현상시간) 제품 평가시는 브레이크 포인트 50%로 고정하였다(최소현상시간의 2배).The dry film photoresist laminated on the copper clad laminate was left to stand for 20 minutes after irradiating ultraviolet rays at an exposure dose of 40 mJ using a Perkin-Elmer OB7120 (parallel light exposure machine) using a photomask for circuit evaluation. Then, development was carried out under the development conditions of the spray injection method with 1.0 wt% aqueous solution of Na 2 CO 3 . The time required for the dry film photoresist of the unexposed portion on the copper clad laminate to be completely washed in the developer was measured using a stopwatch (minimum development time). The product was fixed at a break point of 50% (2 of minimum development time). stomach).
상기 실시예 1 내지 13 및 비교예 1 내지 3에서 제조한 감광성 수지 조성물을 사용하여 제조된 드라이 필름 포토레지스트의 물성을 아래 방법으로 측정하여 그 결과를 하기 표 5에 나타내었다.The physical properties of the dry film photoresist prepared using the photosensitive resin compositions prepared in Examples 1 to 13 and Comparative Examples 1 to 3 were measured by the following methods, and the results are shown in Table 5 below.
<세선 밀착력(단위: ㎛)><Wire adhesion (unit: μm)>
현상 후 독립된 레지스트가 살아남아 있는 최소선폭으로 ZEISS AXIOPHOT Microscope으로 측정하였다.After development, the minimum line width of independent resist was measured by ZEISS AXIOPHOT Microscope.
<해상도(단위: ㎛)><Resolution (Unit: µm)>
회로라인과 회로라인 사이의 공간을 1:1로 하여 측정한 값으로, ZEISS AXIOPHOT Microscope으로 측정하였다.The space between the circuit line and the circuit line was measured at 1: 1 and measured with a ZEISS AXIOPHOT Microscope.
<도금에 대한 오염 평가>Pollution Assessment for Plating
상기 감광성 수지 조성물로 제조된 드라이 필름 포토레지스트를 40cm×50cm 크기로 자르고, 보호필름을 제거하여 스텝 타블렛이 20단이 되는 노광량으로 노광을 실시한 다음, PET 필름을 박리하여 경화막을 얻었다. 이 경화막을 황산구리/황산 수용액의 도금액 1L에 3일간 침지하였다. 할셀 시험 욕조(정도시험기연구소 제품)를 이용하여 동판에 전류 2A로 15분간 전해 동도금을 실시하였다. The dry film photoresist made of the photosensitive resin composition was cut to a size of 40 cm × 50 cm, the protective film was removed, the exposure was performed at an exposure amount of 20 steps, and then the PET film was peeled off to obtain a cured film. This cured film was immersed in 1 L of plating liquid of copper sulfate / sulfuric acid aqueous solution for 3 days. Electrolytic copper plating was performed on a copper plate for 15 minutes at a current of 2 A using a Halssel test bath (manufactured by the Quality Test Laboratory).
경화막을 침지하지 않은 도금액을 레퍼런스로 하여 경화막을 침지한 도금액으로 도금했을 때 도금의 외관을 눈으로 관찰하여 도금 외관에 이상이 있거나 변색이 발생한 경우 X, 레퍼런스와 동일하여 전혀 이상이 없는 경우 ○로 판단하였다.When plating with the plating solution immersed in the cured film with reference to the plating solution without immersing the cured film, the appearance of plating is visually observed. If there is an abnormality in the plating appearance or discoloration occurs, X is the same as the reference. Judging
< 박리속도(단위: 초)><Peeling rate (unit: second)>
박리속도는 제조된 감광성 드라이 필름 레지스트의 PE 필름을 제거하고 난 후, 가열압착롤러를 이용하여 동판에 라미네이션시키고, 감광성 수지 조성물을 노광하고 현상하여, 50mm×50mm의 크기의 광경화막을 제작하였다. 그리고 3% 수산화나트륨 수용액(온도 50℃)을 사용하여 박리를 하였다. 박리속도의 평가는 광경화막이 동판에서 떨어지는 시간을 측정하였다.The peeling rate was removed by removing the PE film of the photosensitive dry film resist, and then laminated on a copper plate using a heat-compression roller, the photosensitive resin composition was exposed and developed to produce a photocured film having a size of 50mm x 50mm. And it peeled using 3% sodium hydroxide aqueous solution (temperature 50 degreeC). The evaluation of the peeling speed measured the time when the photocured film fell from the copper plate.
표 5
실시예 비교예
1 2 3 4 5 6 7 8 9 10 11 12 13 1 2 3
세선밀착력*1 30 25 30 25 25 35 30 35 30 35 33 35 30 30 25 -
해상도*2 30 33 33 33 33 30 33 33 33 30 33 33 33 33 33 -
도금에 대한 오염 O O O O O O O O O O O O O X O -
박리속도 40 60 50 60 75 45 60 55 65 50 65 60 65 55 80 -
*1 세센 밀착력은 현상 후, 독립된 선폭이 살아남아 있는 최소선폭이다.*2 해상도는 회로라인과 회로라인 사이의 공간을 1:1로 하여 측정한 값이다.
Table 5
Example Comparative example
One 2 3 4 5 6 7 8 9 10 11 12 13 One 2 3
Fine wire adhesion * 1 30 25 30 25 25 35 30 35 30 35 33 35 30 30 25 -
Resolution * 2 30 33 33 33 33 30 33 33 33 30 33 33 33 33 33 -
Contamination for plating O O O O O O O O O O O O O X O -
Peeling Speed 40 60 50 60 75 45 60 55 65 50 65 60 65 55 80 -
* 1 Cesene adhesion is the minimum line width where independent line widths survive after development. * 2 Resolution is a value measured with a space of 1: 1 between a circuit line and a circuit line.
상기 표 5에 나타난 바와 같이, 실시예 1 내지 13은 비교예 1 내지 3에 비해 유사 수준의 세선 밀착력 및 해상도를 유지하면서도 박리속도가 빠르고, 도금액에 대한 내성이 현저히 우수함을 알 수 있었다. 특히, 비교예 3의 경우, 감광성 수지 조성물층이 지나치게 끈끈하고 필름 형태를 제대로 유지하지 못하여 라미네이션 단계를 수행할 수 없었다.As shown in Table 5, Examples 1 to 13 was compared to Comparative Examples 1 to 3 while maintaining a similar level of thin line adhesion and resolution, it was found that the peeling rate is fast, the resistance to the plating solution is remarkably excellent. In particular, in the case of Comparative Example 3, the lamination step could not be performed because the photosensitive resin composition layer was too sticky and did not properly maintain the film form.
본 발명의 단순한 변형 또는 변경은 모두 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.All simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.

Claims (3)

  1. [A] 광중합 개시제; [B] 알카리 현상성 바인더 폴리머; 및 [C] 광중합성 화합물을 포함하고, 상기 [C] 광중합 화합물은 하기 화학식 1로 표시되는 화합물을 포함하며, [B] 알카리 현상성 바인더 폴리머에 대한 [C] 광중합성 화합물의 중량비는 1 : 0.1 내지 1인 것을 특징으로 하는 드라이 필름 포토레지스트용 감광성 수지 조성물.[A] photopolymerization initiator; [B] alkali developable binder polymers; And [C] a photopolymerizable compound, wherein the [C] photopolymerizable compound includes a compound represented by the following Formula 1, wherein the weight ratio of the [C] photopolymerizable compound to the alkali developable binder polymer is 1: It is 0.1-1, The photosensitive resin composition for dry film photoresists.
    [화학식 1][Formula 1]
    Figure PCTKR2014007306-appb-I000006
    Figure PCTKR2014007306-appb-I000006
    상기 화학식 1에서, l+n은 2 또는 3의 정수이고, m은 12 내지 18의 정수임.In Formula 1, l + n is an integer of 2 or 3, m is an integer of 12 to 18.
  2. 제1항에 있어서, 상기 감광성 수지 조성물은 고형분 기준으로, [A] 광중합 개시제는 2 내지 10 중량%, 화학식 1로 표시되는 화합물은 5 내지 40 중량%를 포함하는 것을 특징으로 하는 드라이 필름 포토레지스트용 감광성 수지 조성물.The dry film photoresist of claim 1, wherein the photosensitive resin composition comprises 2 to 10 wt% of the [A] photopolymerization initiator and 5 to 40 wt% of the compound represented by Formula 1 based on a solid content. Photosensitive resin composition for.
  3. 제1항에 있어서, 상기 감광성 수지 조성물은 고형분 기준으로, [A] 광중합 개시제는 2 내지 10 중량%, 화학식 1로 표시되는 화합물은 10 내지 35 중량%를 포함하는 것을 특징으로 하는 드라이 필름 포토레지스트용 감광성 수지 조성물. The dry film photoresist of claim 1, wherein the photosensitive resin composition comprises 2 to 10 wt% of the photopolymerization initiator [A] and 10 to 35 wt% of the compound represented by Formula 1, based on a solid content. Photosensitive resin composition for.
PCT/KR2014/007306 2013-08-07 2014-08-07 Photoresist resin composition for dry film photoresist WO2015020445A1 (en)

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