Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment

Definitions

• Embodiments of the invention generally relate to a gas distribution plate assembly and method for distributing gas in a processing chamber.
• PECVD Plasma enhanced chemical vapor deposition
• a substrate such as a transparent substrate for flat panel display or semiconductor wafer.
• PECVD is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber that contains a substrate.
• the precursor gas or gas mixture is typically directed downwardly through a distribution plate situated near the top of the chamber.
• the precursor gas or gas mixture in the chamber is energized (e.g., excited) into a plasma by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber.
• RF radio frequency
• the excited gas or gas mixture reacts to form a layer of material on a surface of the substrate that is positioned on a temperature controlled substrate support. Volatile byproducts produced during the reaction are pumped from the chamber through an exhaust system.
• Flat panels processed by PECVD techniques are typically large, often exceeding 4 square meters.
• Gas distribution plates (or gas diffuser plates) utilized to provide uniform process gas flow over flat panels are relatively large in size, particularly as compared to gas distribution plates utilized for 200mm and 300mm semiconductor wafer processing.
• edges of the substrate, such as sides and comers thereof experience conditions that may be different than the conditions experienced at other portions of the substrate. These different conditions affect processing parameters such as film thickness, deposition uniformity and/or film stress.
• film thickness and film uniformity control for large area PECVD becomes an issue.
• Thin film transistors TFT and active matrix organic light emitting diodes (AMOLED) are but two types of devices for forming flat panel displays.
• the present invention generally relates to a gas distribution plate designed to ensure substantially uniform deposition on a substrate.
• a diffuser for a deposition chamber is provided.
• the diffuser includes a plate having edge regions, comer regions and a center region, and plurality of gas passages comprising an orifice hole are formed between an upstream side and a downstream side of the plate, wherein one or more of a length or a diameter of the orifice holes in one or more of the corner regions or the edge regions of the plate is different than a corresponding length or a corresponding diameter of the orifice holes in the center region of the plate.
• a diffuser for a deposition chamber includes a plate having a first major edge region opposing a second major edge region, a minor edge region adjacent each of the first and second major edge regions, a corner region at the intersection of the major edge regions and the minor edge regions, and a plurality of gas passages formed between an upstream side and a downstream side of the plate, wherein a portion of gas passages formed in one or both of the major edge regions and the corner regions include a local flow gradient structure.
• a method of processing a substrate on a substrate support includes delivering a deposition gas through a diffuser with a first set of gas passages having choke holes with a uniform diameter and/or a uniform length and having a second set of gas passages having choke holes with a gradually increasing diameter and/or a gradually increasing length, dissociating the deposition gas between the diffuser and the substrate support, and forming a film over the substrate from the dissociated gas.
• Figure 1 is a schematic cross-section view of one embodiment of a PECVD chamber.
• Figure 2 is a cross-sectional view of a portion of the diffuser of Figure 1.
• Figure 3 is a cross-sectional plan view of the diffuser of Figures 1 and 2.
• Figure 4 is a cross-sectional plan view of a portion of the diffuser of Figure 3.
• Figure 5 is a cross-sectional plan view of a portion of the diffuser of Figure 3 showing one embodiment of a corner area.
• Figure 6 is a cross-sectional plan view of a portion of the diffuser of Figure 3 showing another embodiment of a corner area.
• Figures 7 and 8 are partial cross-sectional views of other embodiments of a diffuser that may be used in the chamber of Figure 1 .
• Figure 9 is a top plan view of a portion of a diffuser that may be used in the chamber of Figure 1.
• Figure 10 is a graph showing a flow conductance gradient according to test results.
• Figure 1 1 is a graph showing results of a test combining varying lengths and diameters of orifice holes in a diffuser.
• Embodiments of the invention generally relate to a gas distribution plate or diffuser designed to ensure substantially uniform deposition on a substrate.
• the gas distribution plate can compensate for non-uniformities in the comer regions of the substrate as well as edges of the substrate.
• the gas distribution plate compensates for the non-uniformities by adjusting flow of gases through the gas distribution plate in areas where deposition is non-uniform.
• a local flow gradient within one or more portions of the gas distribution plate may be adjusted to provide a greater flow rate though portions of the gas distribution plate relative to other portions of the gas distribution plate in order to compensate for non-uniformities.
• the gas passages can be sized differently as needed such that more gas is permitted to flow through certain, strategically placed gas passages to increase the deposition on the substrate in areas of the substrate that underlie the gas distribution plate.
• the size of the orifice holes of the gas passages can be varied to form a gradient of diameters or lengths, or a mixture of orifice diameters or lengths that result in substantially uniform deposition.
• Embodiments herein are illustratively described below in reference to a PECVD system configured to process large area substrates, such as a PECVD system, available from AKT, a division of Applied Materials, I nc. , Santa Clara, California.
• the invention has utility in other system configurations such as etch systems, other chemical vapor deposition systems and any other system in which distributing gas within a process chamber is desired, including those systems configured to process round substrates.
• Figure 1 is a schematic cross-section view of one embodiment of a chamber 100 for forming electronic devices, such as TFT and AMOLED by a PECVD process. It is noted that Figure 1 is just an exemplary apparatus that may be used to form electronic devices on a substrate.
• One suitable chamber for a PECVD process is available from Applied Materials, Inc., located in Santa Clara, CA. It is contemplated that other deposition chambers, including those from other manufacturers, may be utilized to practice the embodiments of the invention.
• the chamber 100 generally includes walls 102, a bottom 104, and a gas distribution plate or diffuser 1 10, and substrate support 130 which define a process volume 106.
• the process volume 106 is accessed through a sealable slit valve 108 formed through the walls 102 such that the substrate, may be transferred in and out of the chamber 100.
• the substrate support 130 includes a substrate receiving surface 132 for supporting a substrate 105 and a stem 134 is coupled to a lift system 136 to raise and lower the substrate support 130.
• a shadow frame 133 may be placed over periphery of the substrate 105 during processing.
• Lift pins 138 are moveably disposed through the substrate support 130 to move the substrate 105 to and from the substrate receiving surface 132 to facilitate substrate transfer.
• the substrate support includes a substrate receiving surface 132 for supporting a substrate 105 and a stem 134 is coupled to a lift system 136 to raise and lower the substrate support 130.
• a shadow frame 133 may be placed over periphery of the substrate 105 during processing.
• the substrate support 130 may also include heating and/or cooling elements 139 to maintain the substrate support 130 and substrate 105 positioned thereon at a desired temperature.
• the substrate support 130 may also include grounding straps
• the diffuser 1 10 is coupled to a backing plate 1 12 at its periphery by a suspension 1 14.
• the diffuser 110 may also be coupled to the backing plate 1 12 by one or more center supports 1 18 to help prevent sag and/or control the straightness/curvature of the diffuser 110.
• a gas source 120 is coupled to the backing plate 1 12 to provide gas through the backing plate 1 12 to a plurality of gas passages 1 11 formed in the diffuser 1 10 and to the substrate receiving surface 132.
• a vacuum pump 109 is coupled to the chamber 100 to control the pressure within the process volume 106.
• An RF power source 122 is coupled to the backing plate 1 12 and/or to the diffuser 1 10 to provide RF power to the diffuser 1 10 to generate an electric field between the diffuser 1 10 and the substrate support 130 so that a plasma may be formed from the gases present between the diffuser 1 10 and the substrate support 130.
• Various RF frequencies may be used, such as a frequency between about 0.3 MHz and about 200 MHz.
• the RF power source 122 provides power to the diffuser 1 10 at a frequency of 13.56 MHz.
• a remote plasma source 124 such as an inductively coupled remote plasma source, may also be coupled between the gas source 120 and the backing plate 1 12. Between processing substrates, a cleaning gas may be provided to the remote plasma source 124 and excited to form a remote plasma from which dissociated cleaning gas species are generated and provided to clean chamber components. The cleaning gas may be further excited by the RF power source 122 provided to flow through the diffuser 1 10 to reduce recombination of the dissociated cleaning gas species. Suitable cleaning gases include but are not limited to NF 3 , F 2 , and SF 6 .
• the heating and/or cooling elements 139 may be utilized to maintain the temperature of the substrate support 130 and substrate 105 thereon during deposition at about 400 degrees Celsius or less, in one embodiment, the heating and/or cooling elements 139 may used to control the substrate temperature to less than 100 degrees Celsius, such as between about 20 degrees Celsius and about 90 degrees Celsius.
• the spacing during deposition between a top surface of the substrate 105 disposed on the substrate receiving surface 132 and a bottom surface 140 of the d iff user 1 10 may be between 400 mil and about 1 ,200 mil, for example between 400 mil and about 800 mil.
• the bottom surface 140 of the diffuser 1 10 may include a concave curvature wherein the center region is thinner than a peripheral region thereof, as shown in the cross-sectional view of Figure 1 .
• the bottom surface 140 is shown to be concave facing the substrate 105. It is to be understood that the bottom surface 140 may be flat and substantially parallel to an upper surface 142 of the diffuser 1 10 in some embodiments.
• the upper surface 142 of the diffuser 1 10 may include a tapered or concave curvature such that the center region is thinner than a peripheral region thereof.
• the chamber 100 may be used to deposit silicon oxide (SiO x ) with tetraethyl orthosilicate ⁇ C-8H20O4S! gas and/or silane (S1H4) gas diluted in nitrous oxide (N2O) by a PECVD process which is used as gate insulator films, buffer layer for heat dissipation and etch stop layers in TFT's and AMOLED's.
• the uniformity (i.e., thickness) of the oxide film has significant impact on the final device performance, such as mobility and drain current uniformity, and therefore is critical in the development of the process.
• edges of the substrate such as comer regions and sides of the substrate, experience a lower deposition rate which results in film thicknesses at these regions that are less than other regions.
• the cause of the lower deposition rate in the edge regions is attributed to electromagnetic field variations and/or gas distribution adjacent these areas.
• the inventive diffuser 1 10 has been developed and tested to overcome these effects and minimize non- uniformities in films formed on the substrate 105.
• Figure 2 is a cross-sectional view of a portion of the diffuser 1 10 of Figure 1.
• the diffuser 1 10 includes a first or upstream side 202 facing the backing plate 1 12 (shown in Figure 1 ) corresponding to the upper surface 142 of the diffuser 110 of Figure 1 , and an opposing second or downstream side 204 that faces the substrate support 130 (shown in Figure 1 ) corresponding to the bottom surface 140 of the diffuser 1 10 of Figure 1 .
• Each gas passage 1 11 is defined by a first bore 210 coupled by an orifice hole 214 to a second bore 212 that combine to form a fluid path through the diffuser 1 10.
• the first bore 210 extends a first depth 230 from the upstream side 202 of the diffuser 1 10 to a bottom 218,
• the bottom 218 of the first bore 210 may be tapered, beveled, chamfered or rounded to minimize the flow restriction as gases flow from the first bore 210 into the orifice hole 214.
• the first bore 210 generally has a diameter of about 0.093 to about 0.218 inches, and in one embodiment is about 0.156 inches.
• the thickness of the diffuser 1 10 may be between about 0.8 inch to about 3.0 inches, for example, between about 0.8 inch to about 2.0 inch.
• the second bore 212 is formed in the diffuser 1 10 and extends from the downstream side (or end) 204 to a depth 232 of about 0.10 inch to about 2.0 inches. In one embodiment, the depth 232 may be between about 0.1 inch to about 1.0 inch.
• the diameter 236 of the second bore 212 may be generally about 0.1 inch to about 1 .0 inch and may be flared at an angle 216 of about 10 degrees to about 50 degrees. In one embodiment, the diameter 236 may be between about 0.1 inch to about 0.5 inch and the flaring angle 218 may be between 20 degrees to about 40 degrees.
• the surface of the second bore 212 may be between about 0.05 inch 2 to about 10 inch and in one embodiment may be between about 0.05 inch 2 to about 5 inch 2 .
• the diameter of second bore 212 refers to the diameter intersecting the downstream side 204.
• An example of diffuser 110, used to process 1500 mm by 1850 mm substrates, has second bores 212 at a diameter of 0.250 inch and at a flare angle 216 of about 22 degrees.
• the distances 280 between rims 282 of adjacent second bores 212 are between about 0.0 inch to about 0.6 inch, and in one embodiment, may be between about 0.0 inch to about 0.4 inch.
• the diameter of the first bore 210 is usually, but not limited to, being at least equal to or smaller than the diameter of the second bore 212.
• a bottom 220 of the second bore 212 may be tapered, beveled, chamfered or rounded to minimize the pressure loss of gases flowing out from the orifice hole 214 and into the second bore 212. Moreover, as the proximity of the orifice hole 214 to the downstream side 204 serves to minimize the exposed surface area of the second bore 212 and the downstream side 204 that face the substrate, the downstream area of the diffuser 1 10 exposed to fluorine provided during chamber cleaning is reduced, thereby reducing the occurrence of fluorine contamination of deposited films.
• the volumes of the second bores 212 may comprise hollow cathode cavities 250.
• the orifice holes 214 generate a back pressure on the upstream side 202 of the diffuser 1 10. Due to the back pressure, process gases may evenly distribute on the upstream side 202 of the diffuser 1 10 before passing through the gas passages 1 1 1 .
• the volumes of the hollow cathode cavities 250 permit a plasma to be generated within the gas passages 1 1 1 , specifically within the hollow cathode cavities 250.
• the variations of the volume of the hollow cathode cavities 250 permit greater control of plasma distribution as opposed to the situation where no hollow cathode cavities are present.
• At least a portion of the hollow cathode cavities 250 at the downstream side 204 may have a larger diameter 238 or width than the orifice holes 214.
• the first bore 210 has a width or diameter less than the plasma dark space and thus, plasma is not formed above the hollow cathode cavities 250.
• the orifice hole 214 generally couples the bottom 218 of the first bore 210 and the bottom 220 of the second bore 212.
• the orifice hole 214 may include a diameter of about 0.01 inch to about 0.3 inch, for example, about 0.01 inch to about 0.1 inch, and may include a length 234 of about 0.02 inch to about 1 .0 inch, for example, about 0.02 inch to about 0.5 inch.
• the orifice hole 214 may be a choke hole and the length 234 and diameter (or other geometric attribute) of the orifice hole 214 is the primary source of back pressure in the volume between the diffuser 1 10 and the backing plate 1 12 (shown in Figure 1 ) which promotes even distribution of gas across the upstream side 202 of the diffuser 110.
• the orifice hole 214 is typically configured uniformly among the plurality of gas passages 1 1 1 ; however, the restriction through the orifice hole 214 may be configured differently among the gas passages 1 1 1 to promote more gas flow through one area or region of the diffuser 1 10 relative to another area or region.
• the orifice hole 214 may have a larger diameter and/or a shorter length 234 in those gas passages 11 1 , of the diffuser 1 10, closer to the wall 102 (shown in Figure 1 ) of the chamber 100 so that more gas flows through the edges of the diffuser 1 10 to increase the deposition rate at portions of the perimeter areas of the substrate 105.
• Figure 3 is a cross-sectional plan view of the diffuser 1 10 of Figures 1 and 2 showing the orifice holes 214 formed therein.
• the diffuser 1 10 includes four adjacent sides 300A-300D connected at corners 305A-305D.
• the sides 300A and 300C define major edges of the diffuser 1 10 while the sides 300B and 300D define minor edges of the diffuser 1 10.
• An area 310 is indicated by a curved, dashed line on side 300A of the diffuser 1 10.
• the area 310 includes a region of the diffuser 1 10 where the orifice holes 214 include a flow restricting attribute that is different than other orifice holes 214 in the diffuser 110. While the area 310 is shown only on side 300A, one or all of the sides 300B-300D may include the area 310.
• the diffuser 110 also includes area 315 indicated by a curved, dashed line adjacent the corner 305A.
• the area 315 includes a region of the diffuser 1 10 where the orifice holes 214 include a flow restricting attribute that is different than other orifice holes 214 in the diffuser 1 10. While the area 315 is shown adjacent corner 305A, one or all of the corners 305B-305D may include the area 315.
• the areas 310, 315 may define portions of the diffuser 1 10 where a local flow gradient is provided according to embodiments described herein.
• the local flow gradient may comprise a structure consisting of one or more orifice holes 214 having a flow restricting attribute that is different than other orifice holes 214 in the diffuser 110.
• the local flow gradient may be provided by one or more orifice holes 214 having a diameter and/or a length that is different than a diameter of other orifice holes 214 in the diffuser 1 10.
• the local flow gradient may comprise a structure consisting of one orifice hole 214 having a first diameter and/or length surrounded by other orifice holes 214 having a second diameter, the second diameter and/or length being different than the first diameter and/or length.
• the local flow gradient may also comprise a structure consisting of a group of orifice holes 214 having a first diameter and/or length adjacent other orifice holes 214 having a second diameter and/or length, the second diameter and/or length being different than the first diameter and/or length. Additionally, the local flow gradient may comprise a structure consisting of groups of one or more orifice holes 214 having a first diameter and/or length interspersed within other orifice holes 214 having a second diameter and/or length, the second diameter and/or length being different than the first diameter and/or length.
• the diffuser 1 10 may be configured to provide a hollow cathode gradient from the center to the edge(s) and/or the corner(s).
• the gas passages 1 1 1 (each consisting of the first bore 210, the orifice hole 214 and the second bore 212 as described in Figure 2) may be configured to have a varying volumes, particularly with respect to volumes of the hollow cathode cavities 250 (shown in Figure 2).
• the diffuser 110 includes a hollow cathode gradient comprising gas passages 1 11 with an increasing volume from a center of the diffuser 1 10 to an edge of the diffuser 1 10.
• the diffuser 110 includes a hollow cathode gradient comprising gas passages 11 1 with an increasing volume from a center of the diffuser 1 10 to a corner of the diffuser 110.
• the hollow cathode cavities 250 may include a volume that is greater at one or all of the sides 300A-300D, one or all of the comers 305A-305D, and combinations thereof, as compared to the hollow cathode cavities 250 in a center region of the diffuser 1 10.
• the volumes of the orifice holes 214 may increase from the center to one or all of the sides 300A-300D, one or all of the corners 305A-305D, and combinations thereof
• the volumes of the orifice holes 214 and/or the hollow cathode cavities 250 may gradually increase from a center of the diffuser 1 10 to a corner of the diffuser 1 10.
• Figure 4 is a cross-sectional plan view of a portion of the area 310 of the diffuser 1 10 of Figure 3.
• a plurality of orifice holes 405, 410, 415, 420, 425 and 430 are shown which represent one embodiment of the orifice holes 214 shown in Figure 3.
• Rows 1-8 are shown as a sub-area 400 of the area 310 and include the orifice holes 405, 410, 415, 420, 425 and 430 having differing flow restriction attributes, which comprises one embodiment of a local flow gradient structure.
• Orifice holes 405 are included in row 1 and may include a first diameter that is larger than a diameter of the orifice holes 410 of row 2.
• Orifice holes 415 are included in row 3 and may include a second diameter that is larger than a diameter of the orifice holes 420 of row 4.
• the orifice holes the first diameter may be about 30 % larger than a diameter of an orifice hole n of the diffuser 1 10 having the smallest diameter.
• the second diameter may be about 20 % larger than a diameter of an orifice hole n of the diffuser 110 having the smallest diameter.
• the diameter of the orifice hole n of the diffuser 1 10 i.e., the smallest diameter
• Patterns of diametrical differences of the orifice holes 405, 410, 415, 420, 425 and 430 may vary within the area 310.
• the diameter of the orifice holes 405, 410, 415, 420, 425 and 430 decreases from the side 300A to the center of the diffuser 1 10 within the area 310.
• the orifice holes 405 include a first diameter that is larger than the diameter of one or a combination of the orifice holes 410, 415, 420, 425 and 430.
• a number of select rows in the sub-area 400 may include one or more orifice holes having a diameter similar to the diameter of the orifice holes 405, which is greater than the orifice holes 410, 415, 420, 425 and 430.
• the orifice holes 405, 410, 415, 420, 425 and 430 having different diameters may be mixed within each of the rows 1 -6.
• the lengths of one or more of the plurality of orifice holes 405, 410, 415, 420, 425 and 430 may be different.
• lengths of the plurality of orifice holes 405, 410, 415, 420, 425 and 430 may be decrease from rows 1 -6, increase from rows 1 -6, or the lengths of the plurality of orifice holes 405, 410, 415, 420, 425 and 430 may be mixed within the area.
• Figure 5 is a cross-sectional plan view of a portion of the diffuser 1 10 of Figure 3 showing one embodiment of the area 315.
• a plurality of first orifice holes 505A are shown amidst a plurality of second orifice holes 505B having a second diameter, which comprises another embodiment of a local flow gradient structure.
• the second diameter is less than the first diameter.
• the diameters of the first orifice holes 505A is about 20 % to about 30 % greater than the diameter of the second orifice holes 505B.
• the plurality of first orifice holes 505A comprise a cluster 510 and one or more of these clusters 510 may be included in the area 315.
• the lengths of the plurality of first orifice holes 505A may be different than the plurality of second orifice holes 505B. Additionally, the lengths of the plurality of second orifice holes 505B may increase or decrease from a center to an edge of the diffuser 1 10, depending on desired conductance values in different low pressure regimes.
• Figure 6 is a cross-sectional plan view of a portion of the diffuser 1 10 of Figure 3 showing another embodiment of the area 315.
• a plurality of first orifice holes 605A are shown disposed about a plurality of second orifice holes 605B, 605C and 605D, which comprises another embodiment of a local flow gradient structure.
• each of the first orifice holes 605A include a diameter and/or length that is less than a diameter and/or length of each of the second orifice holes 605B, 605C and 605D.
• a portion of the second orifice holes have a diameter and/or length that is about 20 % to about 30 % greater than the diameter and/or length of the first orifice holes 605A.
• the diameter and/or length of a portion of the second orifice holes, such as second orifice holes 605B, are greater than a diameter and/or length of both of the first orifice holes 605A and the remainder of the second orifice holes 605C and 605D.
• the diameter and/or length of a portion of the second orifice holes are greater than a diameter and/or length of the first orifice holes 605A and the remainder of the second orifice holes 605C and 805D, and the remainder of the second orifice holes 805C and 805D are the same size.
• Figures 7 and 8 are partial cross-sectional views of other embodiments of a diffuser 1 10 that may be used in the chamber 100 of Figure 1 .
• the diffuser 1 10 includes gas passages 1 11 and each gas passage 11 1 is defined by a first bore 210 coupled by an orifice hole 214 to a second bore 212 that combine to form a fluid path through the diffuser 1 10.
• the length of the orifice holes and/or a length of the first bores 210 vary from a center to an edge of the diffuser 110, For example, as shown in Figure 7, the first orifice hole length 700A may be greater than a second orifice hole length 700B.
• the volumes of the hollow cathode cavities 250 vary from a center to an edge of the diffuser 110.
• a second orifice hole length 800B is greater than a first orifice hole length 800A.
• a length of the first bores 210 may decrease from edge to center.
• controlling the length of the first bores 210 may be utilized to control the length of the orifice holes 214.
• a variation in flow attributes of the gas passages 1 1 1 may be desired for different flow regimes and/or different gases flowing therethrough for formation of uniform films on a substrate.
• variations in length and/or size of the orifices holes 214, as well as the volumes of the hollow cathode cavities 250 may be utilized to tune gas flow and conductance that may enhance a particular film formation process.
• variations in the lengths of the orifices holes 214 as described herein may promote formation of a uniform oxide layer.
• variations in the volumes of the hollow cathode cavities 250 as described herein may promote formation of a uniform nitride layer.
• a baffle (typically disposed between a gas inlet into the chamber and the upper surface of a diffuser) may have been used to tune flow through the diffuser.
• a baffle may not be utilized to vary flow between individual gas passages or groups of gas passages, as well as create zones of gas passages having a graded or varied flow attribute as provided by embodiments described herein.
• a baffle is not necessary.
• utilizing embodiments of the diffuser 1 10 as described herein may provide a greater margin of repeatability in the formation of films on substrates.
• Figure 9 is a top plan view of a portion of a diffuser 110 that may be used in the chamber 100 of Figure 1.
• a plurality of gas passages 1 1 1 are shown as viewed from the upstream side 202.
• a first zone 900A of the gas passages 1 1 1 includes a flow attribute that is different from a second zone 900B or a third zone 900C (from edge to center or corner to center) of the diffuser 110.
• the flow attribute may be one or a combination of orifice holes 214 having a different length and/or a different diameter with each zone 900A- 900C.
• the orifice holes 214 in the first zone 900A may include a length that is less than a length of the orifice holes 214 in one or both of the second zone and the third zone 900C.
• the orifice holes 214 in the second zone 900B may include a length that is less than a length of the orifice holes 214 in the third zone 900C.
• the orifice holes 214 in the first zone 900A may include a length that is greater than a length of the orifice holes 214 in one or both of the second zone and the third zone 900C
• the orifice holes 214 in the second zone 900B may include a length that is greater than a length of the orifice holes 214 in the third zone 900C.
• the orifice holes 214 in the first zone 900A may include a diameter that is less than a diameter of the orifice holes 214 in one or both of the second zone and the third zone 900C.
• the orifice holes 214 in the second zone 900B may include a diameter that is less than a diameter of the orifice holes 214 in the third zone 900C.
• the orifice holes 214 in the first zone 900A may include a diameter that is greater than a diameter of the orifice holes 214 in one or both of the second zone and the third zone 900C
• the orifice holes 214 in the second zone 900B may include a diameter that is greater than a diameter of the orifice holes 214 in the third zone 900C.
• varied lengths of the orifice holes 214 may be used as described above.
• the length of the orifice holes 214 may be varied from about 0.2 inch in length to about 0.5 inch in length to obtain a flow gradient from about 20% to about 415%, for example about 50% to about 200% across the area of the diffuser 1 10.
• the flow gradient may be center to edge, edge to center, center to corners, or diagonally.
• the flow gradient may be about 20% to about 415% from center to edge with an average flow rate being somewhere between the center and the edge of the diffuser 1 10.
• the flow gradient may be formed using a drill bit of a specific diameter. The diameter of the drill bit may produce an orifice hole 214 having about a 0.015 inch diameter or produce an orifice hole 214 having about a 0.023 inch diameter.
• the flow gradient may be formed using either size of these drill bits by varying the length of the formed orifice hole. For example, when a drill bit having a 0.015 inch diameter is used, only the length of the hole produced will need to be varied in order to provide the flow gradient between the gas passages 1 1 1.
• Manufacture of a diffuser such as the diffuser 1 10 of Figures 7-9 may be performed at a low cost as the same drill bit size may be used to form each of the orifice holes.
• an automated milling or drilling machine may be provided with a drill bit (or multiple drill bits, depending on the capability of the machine) of a desired size for formation of
• the orifice holes 214 and programmed to drill the orifice holes in a first side of the plate.
• a computer numerical control (CNC) machine may be programmed to drill the orifice holes in the first side of the plate at a predefined pitch using the same size drill bit,
• CNC computer numerical control
• a drill bit (or multiple drill bits, depending on the capability of the machine) of a single size may be used to form each of the orifice holes. This saves time as drill bits would not be changed during the manufacture of the diffuser.
• a second drill bit (or multiple drill bits, depending on the capability of the machine) of a desired size may be provided to the automated machine for formation of the first bores in the upstream side.
• a drill bit for forming first bores having a diameter of about 0.093 inch to about 0.25 inch may be used.
• a 0.1 inch drill bit may be used and the machine is programmed to drill holes of a desired depth in each of the orifice holes. Only the depth of the first bores would need to be controlled in order to control the length of the orifice holes previously formed therein.
• the depth of each of the first bores would be the same.
• the gas passages 1 11 of Figure 8 are desired, the depth of the first bores would be varied.
• a drill bit or multiple drill bits, depending on the capability of the machine) of a single size may be used to form the first bores concentric with each of the orifice holes.
• the plate may be flipped such that the downstream side may be drilled in order to form the second bores.
• a third drill bit or mill (or multiple drill bits or mills, depending on the capability of the machine) of a desired size may be provided to the automated machine for formation of the second bores in the downstream side.
• a drill bit or mill for forming the second bores having a diameter of about 0.1 inch to about 1 .0 inch (and a flare angle as described in Figure 2) may be used.
• a 0.1 inch drill bit (or mill with the desired flare angle) may be used and the machine is programmed to drill holes of a desired depth in each of the orifice holes opposing the first bores. Only the depth of the second bores would need to be controlled In order to control the length of the orifice holes previously formed therein. For example, if the gas passages 1 1 1 of Figure 7 are desired, the depth of each of the first bores would be the same. On the other hand, if the gas passages 1 1 1 of Figure 8 are desired, the depth of the first bores would be varied.
• a drill bit (or multiple drill bits or mills, depending on the capability of the machine) of a single size may be used to form the second bores concentric with each of the orifice holes.
• Method A includes varying the diameters of the orifice holes and method B includes varying the length of the orifice holes.
• the table also shows the flow conductance as well as the flow gradient achieved by both methods.
• a 50% to 200% flow gradient can be achieved by either varying diameters of the orifice holes or varying the length of the orifice holes.
• Method A requires drilling orifice holes having multiple diameters which typically requires more time since drill bits must be changed.
• varying the length oniy uses a single drill bit (in this case, in method B, a drill bit of about a 19.7 mil diameter was used), which requires less time as the same drill bit is used.
• Figure 10 is a graph 1000 showing a flow conductance gradient achieved for both of Method A and Method B according to Table 1 above.
• Figure 1 1 is a graph 1 100 showing Methods A and B combined. As can be seen, a flow gradient from about 20% (with a 15.8 mil diameter drill bit) to about 415% (with a 23.6 mil diameter drill bit) may be achieved.
• Embodiments of the diffuser 1 10 having the varied orifice holes as described herein increase the gas flow and compensate for low deposition rates on corner regions and/or edge regions of substrates. Thereby, overall film thickness uniformity is improved.
• the diffuser 1 10 may be manufactured according the embodiments described herein or the orifice holes as described herein may be added to an existing diffuser in a retrofit process.

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