WO2015016024A1 - 照明装置、照明用リフレクタ及びその製造方法 - Google Patents
照明装置、照明用リフレクタ及びその製造方法 Download PDFInfo
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- WO2015016024A1 WO2015016024A1 PCT/JP2014/068252 JP2014068252W WO2015016024A1 WO 2015016024 A1 WO2015016024 A1 WO 2015016024A1 JP 2014068252 W JP2014068252 W JP 2014068252W WO 2015016024 A1 WO2015016024 A1 WO 2015016024A1
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- thin film
- light
- film layer
- peripheral surface
- inner peripheral
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/16—Pretreatment, e.g. desmutting
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/04—Optical design
- F21V7/06—Optical design with parabolic curvature
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Definitions
- the present invention relates to an illumination reflector that reflects light emitted from a light source and a method for manufacturing the same.
- the present invention also relates to an illumination device including a light source and an illumination reflector that reflects light emitted from the light source.
- This illuminating device includes a light source composed of LEDs, and an illumination reflector (hereinafter referred to as “reflector”) that reflects and collects light emitted from the light source.
- the reflector is composed of a rotating body that rotates around an axis that coincides with the optical axis of the light source, and has a light exit opening at one end in the axial direction and an opening that faces the light source at the other end.
- the inner peripheral surface of the reflector is enlarged in diameter toward the light exit port.
- the light emitted radially from the light source is reflected on the inner peripheral surface of the reflector, and is collected and emitted as parallel light from the light exit port.
- Japanese Unexamined Patent Publication No. 2010-140673 pages 5 to 11, FIG. 1
- Japanese Patent Laying-Open No. 2005-190859 pages 4 to 9, FIG. 3
- JP 2012-234650 A pages 4 to 13 and FIG. 5
- LEDs and the like used as light sources have been increased in output and can be used for lighting devices such as spot lighting.
- a region having a strong yellow component (yellow ring) is formed in a ring shape centering on the optical axis, and there is a problem that it is visually recognized as color unevenness of illumination light.
- the LED element includes a light source sealed with a sealing resin containing a phosphor, a yellow ring appears remarkably.
- An object of the present invention is to provide an illumination reflector that can reduce color unevenness and an illumination device using the same. Another object of the present invention is to provide a method for manufacturing an illumination reflector that can reduce color unevenness.
- the present invention provides a lighting reflector including a metal base material having an inner peripheral surface whose diameter is increased toward a light exit opening that is open at one end in an axial direction, at least on the inner peripheral surface.
- a thin film layer that is formed of a thin film containing ceramics and that scatters light is provided at an end opposite to the light exit port.
- the present invention is characterized in that the illumination reflector having the above-described configuration has a non-formed portion of the thin film layer at least on an end portion on the light emitting port side on the inner peripheral surface.
- the inner peripheral surface is formed as a paraboloid, and an annular angle of 60 ° to 90 ° with respect to an axial direction from the focal point of the paraboloid toward the light exit port.
- the thin film layer is formed in a region, and the thin film layer is not formed on the light exit side of the annular region.
- the present invention is characterized in that, in the illumination reflector having the above-described configuration, the base material is formed in a cylindrical shape having an opening at an end opposite to the light exit port.
- the base material is formed in a cylindrical shape having an opening at an end opposite to the light emitting port, and the light emitting port is formed from the center of the opening.
- the thin film layer is formed in an annular region of 60 ° to 90 ° with respect to the direction of the axis, and the thin film layer is not formed on the light exit side of the annular region.
- the present invention is characterized in that the thin film layer is provided on the periphery of the opening in the illumination reflector having the above-described configuration.
- the present invention is also characterized in that, in the illumination reflector having the above-described configuration, the area occupancy of the thin film layer on the inner side is larger than the outer side of the annular region.
- the present invention is also characterized in that, in the illumination reflector having the above-described configuration, the thickness of the thin film layer outside the inside of the annular region is thinner.
- the present invention is also characterized in that, in the illumination reflector having the above-described configuration, the thin film layer is mainly composed of ceramics and glass.
- the present invention is also characterized in that, in the illumination reflector having the above-described configuration, the base material is made of an aluminum-based material.
- the present invention is characterized in that the illumination reflector having the above-described configuration is provided with a protective layer of an insulator of a light transmitting member or a high reflectance member that covers the inner peripheral surface excluding the thin film layer.
- a protective layer covering the inner peripheral surface excluding the thin film layer is provided, the base material is made of an aluminum-based material, and the protective layer is an anode of the base material. It is characterized by comprising an oxide film.
- the illumination device of the present invention includes the illumination reflector having the above-described configuration, and a light source disposed on an end opposite to the light exit port on the axis of the illumination reflector. It is a feature.
- the illumination device of the present invention is characterized by including the illumination reflector having the above-described configuration and a light source disposed near the focal point.
- the illumination device of the present invention is characterized by including the illumination reflector having the above-described configuration and a light source disposed near the center of the opening.
- the light source includes a light emitting element that emits light having a predetermined wavelength, and a phosphor that excites the light emitted from the light emitting element and converts the light into light having a different wavelength. It is characterized by.
- the input power of the light source exceeds 10 W.
- the present invention is also directed to a method of manufacturing a reflector for illumination comprising a metal substrate having an inner peripheral surface whose diameter is increased toward a light output port that is open at one end in the axial direction, and at least the light emission on the inner peripheral surface.
- the thin film layer is formed by applying to the inner peripheral surface and synthesizing glass from the glass raw material by a sol-gel method.
- the present invention is also directed to a method of manufacturing a reflector for illumination comprising a metal substrate having an inner peripheral surface whose diameter is increased toward a light output port that is open at one end in the axial direction, and at least the light emission on the inner peripheral surface.
- the present invention is a method for manufacturing an illumination reflector having the above-described configuration, and includes a protective layer forming step of forming a protective layer that covers a non-formation region of the thin film layer on the inner peripheral surface, and in the protective layer forming step,
- the protective layer made of an anodized film is formed by alumite treatment of the base material containing aluminum as a main component.
- the present invention is characterized in that the protective layer forming step is performed after the thin film layer forming step in the lighting reflector manufacturing method having the above configuration.
- a thin film layer containing ceramics and scatters light is provided at least on the opposite end of the light emitting surface on the inner peripheral surface of the base material formed of metal.
- a coating containing ceramic particles and a glass raw material is applied to the inner peripheral surface of a base material, and glass is synthesized from the glass raw material by a sol-gel method to form a thin film layer. Form.
- a thin film layer containing ceramics can be formed at a low temperature, and deterioration of accuracy of the reflector for illumination can be prevented.
- thermosetting resin containing ceramic particles is applied on the inner peripheral surface of the base material and cured to form a thin film layer.
- Front sectional drawing which shows the illuminating device of 1st Embodiment of this invention.
- the perspective view which shows the heat sink of the illuminating device of 1st Embodiment of this invention.
- the top view which shows the light source of the illuminating device of 1st Embodiment of this invention.
- Front sectional drawing which shows the light source of the illuminating device of 1st Embodiment of this invention.
- Front sectional drawing which shows the other light source of the illuminating device of 1st Embodiment of this invention.
- the top view which shows the further another light source of the illuminating device of 1st Embodiment of this invention.
- Front sectional drawing which shows the further another light source of the illuminating device of 1st Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 1st Embodiment of this invention.
- Diagram showing the light distribution characteristics of emitted light from a general light source in polar coordinates The figure which shows the light distribution characteristic of the emitted light of a general light source with Cartesian coordinates
- the figure which shows the intensity ratio of blue light and yellow light of the emitted light of a general light source The perspective view explaining the light intensity of the emitted light of a reflector
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 2nd Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 3rd Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 4th Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 5th Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 6th Embodiment of this invention.
- the perspective view which shows the inner surface shape of the reflector of the illuminating device of 7th Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 7th Embodiment of this invention.
- the perspective view which shows the inner surface shape of the reflector of the illuminating device of 8th Embodiment of this invention.
- Front sectional drawing which shows the inner surface shape of the reflector of the illuminating device of 8th Embodiment of this invention.
- the perspective view which shows the inner surface shape of the reflector of the illumina
- FIG. 1 and 2 show a perspective view and a front sectional view of the illumination device of the first embodiment.
- a light source 3 and a reflector 10 are installed on a heat sink 2.
- the reflector 10 includes a base material 11 made of metal such as aluminum.
- the base material 11 has an outer frame portion 12 attached to the heat sink 2 and a light reflecting portion 13 disposed on the inner peripheral side of the outer frame portion 12.
- An insertion hole 12 a through which the light source 3 is inserted is provided on the bottom surface of the outer frame portion 12.
- the light reflecting portion 13 is formed in a cylindrical shape having a light exit port 14 at one end in the direction of the axis of symmetry (axis C) and an opening 15 at the other end.
- the light source 3 faces the opening 15 and is arranged on the axis C. The light emitted from the light source 3 is reflected by the inner surface of the reflector 10 and the illumination light is emitted from the light exit port 14.
- FIG. 3 shows a perspective view of the heat sink 2 in which the light source 3 is installed.
- the heat sink 2 is formed of a metal such as aluminum, and has a columnar columnar portion 2a and a plurality of radiating fins 2b protruding radially from the peripheral surface of the columnar portion 2a.
- the light source 3 is disposed in close contact with one end surface of the columnar portion 2a.
- the light source 3 is formed by a COB (chip on board) type light emitting module 4 in which a plurality of light emitting elements 6 such as LED elements and EL elements are mounted on a ceramic substrate 5.
- COB chip on board
- a frame body 8 surrounding the periphery of the plurality of light emitting elements 6 is provided on the substrate 5, and the light emitting elements 6 are sealed by filling the inside of the frame body 8 with a sealing resin 7.
- the sealing resin 7 includes a phosphor that excites the light emitted from the light emitting element 6 and converts it into light of different wavelengths. Thereby, the light source 3 emits light on the surface of the sealing resin 7.
- the light source 3 By integrating the light emitting elements 6, the light source 3 has a large output power of 10W, 50W, 100W or 100W or more, and high-luminance outgoing light can be obtained. Thereby, since the heat generation of the light source 3 is increased, high heat dissipation is ensured by the heat sink 2 (see FIG. 3) having a very large volume as compared with the light source 3.
- a blue LED, a purple LED, an ultraviolet LED or the like can be used as the light emitting element 6.
- the phosphor any one of blue, green, yellow, orange, and red, or any combination of a plurality of phosphors can be used. Thereby, the emitted light of a desired color can be emitted from the light source 3.
- the phosphor of the sealing resin 7 may be omitted, and the light emitting elements 6 of three colors of blue, green and red having different emission wavelengths may be arranged on the substrate 5.
- the light source 3 is not limited to the above configuration. 6 and 7 show a plan view and a front sectional view of the light source 3 having another configuration.
- the light source 3 is formed by laying a plurality of light emitting modules 4 on a base 9.
- the light emitting modules 4 are evenly arranged around the axis C (see FIG. 2), and the center of gravity of the light source 3 is arranged on the axis C.
- the light source 3 is formed by a light emitting module 4 in which each light emitting element 6 mounted on a substrate 5 is covered with a hemispherical sealing resin 7. A plurality of the light emitting modules 4 may be laid to constitute the light source 3.
- the inner peripheral surface 13a of the light reflecting portion 13 formed by the metal base 11 is formed by a parabolic surface obtained by rotating a parabola around an axis C.
- the inner peripheral surface 13a is expanded in the direction of the axis C toward the light exit port 14.
- the inner peripheral surface 13a is formed in a mirror surface and has a high reflectance.
- a thin film layer 17 is provided on the inner peripheral surface 13a in a predetermined area whose details will be described later.
- An insulating protective layer 19 is provided on the non-formed portion 18 of the thin film layer 17 on the inner peripheral surface 13a.
- the thin film layer 17 is formed of a thin film containing ceramics, and the inner peripheral surface 13a is roughened to scatter light. Thereby, the color unevenness of the illumination light emitted from the light exit 14 can be reduced, as will be described later.
- ceramic has high electrostatic pressure resistance, it is more desirable to form the thin film layer 17 on the periphery of the opening 15 (the lower surface of the light reflecting portion 13). Thereby, the short circuit with the light source 3 and the reflector 10 which adjoins to the opening part 15 can be prevented.
- the film thickness of the thin film layer 17 is about 10 ⁇ m, for example, it has an effect of reducing color unevenness. Considering the mechanical strength of the thin film layer 17 by further improving the effect of reducing color unevenness, the film thickness of the thin film layer 17 is preferably about 50 ⁇ m to 500 ⁇ m. In addition, since it will become easy to produce a crack in the thin film layer 17 when the film thickness of the thin film layer 17 exceeds 1 mm, it is desirable to make a film thickness into 1 mm or less.
- the thin film layer 17 is formed by a thin film layer forming step.
- the thin film layer 17 can be formed by applying a ceramic raw material on the base material 11 and then baking at a high temperature. At this time, since the firing temperature of the ceramic becomes 1200 to 1400 ° C., it is necessary to form the base material 11 with a refractory metal.
- the thin film layer 17 may be formed by applying a ceramic paint containing ceramic particles fired at a high temperature in a glass binder to the base material 11 and then firing it.
- the baking temperature of glass will be about 900 degreeC, and the base material 11 with low melting
- the glass component has high electrostatic pressure resistance as well as ceramics, the thin film layer 17 can be formed without lowering the insulation.
- the glass binder consists of low melting point glass particles hardened with an organic binder.
- the organic binder evaporates at a high temperature, leaving only the vitreous layer containing the ceramic particles.
- the particles of the low melting point glass have a low melting point, but in order to remelt, it is necessary to heat to a firing temperature of 800 to 900 ° C. Since this firing temperature exceeds 660 ° C., which is the melting point of aluminum, an aluminum alloy material that is made to have a high melting point by appropriately adding impurities to aluminum may be used for the substrate 11.
- the thin film layer forming step it is more desirable to form a glass binder by a sol / gel method. That is, after applying ceramic paint containing ceramic particles and glass raw material fired at high temperature to the base material 11, glass is synthesized from the glass raw material by a sol-gel method to form the thin film layer 17.
- a glass binder can be formed at 200 to 500 ° C., and the substrate 11 having a lower melting point can be used. Therefore, the choice of the material of the base material 11 can be increased, and damage to the base material 11 due to heat (for example, accuracy degradation, oxidation, etc.) can be reduced.
- the thin film layer 17 can be formed on the base material 11 of an aluminum-based material mainly composed of aluminum by the above-described process using the sol-gel method.
- Aluminum-based materials are inexpensive and easy to process, are lightweight and can have high reflectivity and high heat dissipation. Therefore, it is more desirable to use the aluminum-based material as the base material 11 and form the thin film layer 17 by the above-described process using the sol-gel method.
- the thin film layer 17 containing a glass binder and ceramics can be thinned to the diameter of ceramic particles. For example, if the particle size of ceramic particles is 10 ⁇ m or less, the thin film layer 17 can be thinned to 10 ⁇ m. If a sufficient amount of ceramic particles are contained even if the thin film layer 17 is thinned, light can be scattered on the thin film layer 17.
- the glass component used as a binder has heat resistance, light resistance, and electrostatic pressure resistance like ceramics, it is desirable as a reflective material for lighting devices.
- the light source 3 having an input power of 10 W to 100 W or more since heat generation and light emission of the light source 3 are severe conditions, a stable substance such as glass is desirable.
- the ceramic particles contained in the ceramic paint for example, zirconia having high light reflectivity is used. Further, silica may be mixed with a part of the ceramic particles as a strength reinforcing agent for the thin film layer 17 formed by firing the ceramic paint.
- typical inorganic white materials such as titanium oxide, alumina, magnesium oxide, zinc oxide, barium sulfate, zinc sulfate, magnesium carbonate, calcium carbonate, wollastonite, etc. may be used as ceramic particles having high light reflectivity. it can.
- aluminum nitride particles or the like may be used as a high thermal conductive ceramic material.
- Other highly reflective or highly thermally conductive ceramic materials may be used, and particles of these ceramic materials may be appropriately selected and used in combination.
- the ceramic material is not limited to the metal oxide, and may be an insulating material that reflects light from the light emitting element.
- the ceramic material includes a wide range of ceramics including, for example, aluminum nitride, that is, all inorganic solid materials. Among these inorganic solid materials, any substance can be used as long as it is a stable substance excellent in heat resistance, light resistance, light reflectivity, and light scattering.
- silicon nitride, silicon carbide, and the like are generally black and are inappropriate as a material for the thin film layer 17 that reflects light.
- the thin film layer forming process using the sol-gel method will be described in more detail.
- a ceramic paint containing ceramic particles is applied to a predetermined portion of the inner peripheral surface 13a of the light reflecting portion 13 formed by the metal base 11 by spray coating or the like.
- glass is synthesized by a sol-gel method to form the thin film layer 17.
- the firing temperature of the glass binder used in the sol-gel method is usually 200 to 500 ° C., but it is effective to set the firing temperature to 400 to 500 ° C. Thereby, a hole can be reduced from the porous film
- a ceramic paint using a sol that synthesizes glass by a sol-gel reaction as a binder of zirconia particles is applied to the inner peripheral surface 13a by spray coating, and the binder is dried at 200 to 300 ° C. to 400 to 500 ° C. It is more preferable to bake with. Thereby, the highly insulating thin film layer 17 can be easily formed.
- the thin film layer 17 may be formed by applying a thermosetting resin containing ceramic particles to the substrate 11 and then drying and curing the resin.
- a thermosetting resin a resin having high heat resistance and high light resistance is used in order to prevent deterioration and discoloration of the thermosetting resin generated by the heat generation of the light source 3 or strong light irradiation by blue light or the like.
- An epoxy resin, a silicone resin, a polyimide resin, a fluororesin, or the like can be used as a thermosetting resin that is excellent in heat resistance and light resistance and has high transparency.
- the thin film layer 17 fixed on the base material 11 by the thermosetting resin is lower than that of the thin film layer 17 fixed by the glass binder, the thin film layer 17 is easily formed at a low temperature. be able to.
- the curing temperature of many silicone resins is as low as about 200 ° C.
- the thin film layer 17 may be formed by another method.
- the thin film layer 17 can be formed by thermal spraying, AD method (aerosol deposition method), or the like.
- the thermal spraying and the AD method the ceramic particles are sprayed at a high speed toward the substrate 11 to form the thin film layer 17.
- thermal spraying and AD methods there are various derivative methods distinguished by particle acceleration methods, particle diameters used, particle temperatures, etc., but the thin film layer 17 is formed by jetting ceramic particles at high speed. The part to do is common.
- ceramic particles may be sprayed after the surface of the base material 11 is roughened by sandblasting as a pretreatment.
- a buffer layer may be inserted between the base material 11 and the thin film layer 17 to prevent peeling of the thin film layer 17 due to thermal expansion or thermal contraction.
- a material having a linear expansion coefficient smaller than that of the substrate 11 can be used as the buffer layer. More preferably, a material having a linear expansion coefficient smaller than that of the base material 11 and larger than that of the thin film layer 17 may be used as the buffer layer.
- the buffer layer when aluminum is used for the base material 11 and alumina is used for the thin film layer 17, it is desirable to use a NiAl alloy as the buffer layer.
- a NiAl alloy When the weight ratio of Ni in the NiAl alloy is set to 90% or more, for example, a buffer layer having a linear expansion coefficient approximately halfway between aluminum and alumina can be formed. Thereby, even if the base material 11 made of aluminum undergoes expansion and contraction due to the thermal history, this influence is suppressed by the buffer layer, and the peeling of the thin film layer 17 made of alumina can be prevented.
- Such a buffer layer is not limited to a metal material including an alloy, and may be another material (for example, resin). That is, after considering the linear expansion coefficient of the material actually used for the base material 11 and the thin film layer 17, the material having the appropriate linear expansion coefficient may be selected as the buffer layer. At this time, it is more preferable if the buffer layer is a material excellent in heat resistance and heat dissipation.
- the protective layer 19 is provided to prevent a decrease in reflectance and light collecting performance due to oxidation of the inner peripheral surface 13a of the substrate 11, and to ensure electrostatic withstand voltage. For this reason, the protective layer 19 has a low gas permeability and is formed of an insulator of a light transmission member or a high reflectance member.
- the protective layer 19 is formed by a protective layer forming step.
- the protective layer 19 made of glass can be formed by applying a paint containing a glass component to the base material 11 and then baking it.
- the protective film 19 may be formed by applying a transparent resin having low gas permeability and high light resistance and high heat resistance and then curing.
- the protective layer 19 made of an anodized film may be formed by anodizing the substrate 11 in the protective layer forming step. Thereby, it is possible to form the protective layer 19 made of an anodized film of aluminum that is very hard and excellent in durability.
- the protective layer forming step it is more desirable to perform the protective layer forming step after the thin film layer forming step. If it does in this way, the thin film layer 17 containing a ceramic will become a protective film with respect to an alumite process in a protective layer formation process. Thereby, only the non-formed part 18 where the aluminum-based material except the thin film layer 17 on the inner peripheral surface 13a is exposed is covered with the protective film 19 of the anodized film.
- the thin film layer forming step is performed after the protective layer forming step, it is necessary to partially alumite the substrate 11 in the protective layer forming step. Alternatively, it is necessary to remove the anodized film in the region where the thin film layer 17 is formed after the entire base material 11 is anodized in the protective layer forming step. Thereby, the man-hour of a protective layer formation process becomes large. For this reason, a protective layer formation process can be performed after a thin film layer formation process, and the manufacturing man-hour of the reflector 10 can be reduced.
- FIG. 10 is a front sectional view showing the shape of the inner peripheral surface 13 a of the light reflecting portion 13.
- the inner peripheral surface 13a is formed by a parabolic surface obtained by rotating a parabola.
- the general formula of the paraboloid is expressed by the formula (1) when the focal position is (0, ⁇ ).
- the z′-axis and the z-axis are parabolic symmetry axes that coincide with the axis C (see FIG. 2), and the ⁇ ′-axis and the ⁇ -axis are radial axes.
- FIG. 10 shows the coordinates of the inner peripheral surface 13a based on the formula (2), and the apex of the paraboloid is arranged at the origin. At this time, the distance between the apex of the paraboloid and the focal point F is ⁇ .
- the opening 15 of the reflector 10 (see FIG. 2) is provided on the focal point F, and the light emitting surface of the light source 3 (see FIG. 2) is arranged in the vicinity of the focal point F.
- the thin film layer 17 is formed at the end on the opposite side (opening 15 side) with respect to the light exit port 14. More specifically, the thin film layer 17 is formed in the entire annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the paraboloid toward the light exit port 14. At this time, the axial length of the thin film layer 17 is 2 ⁇ .
- the entire inner peripheral surface 13 a on the light exit port 14 side with respect to the thin film layer 17 is a non-formed portion 18 of the thin film layer 17.
- the non-formation part 18 is provided in the edge part by the side of the light-projection opening 14 at least on the internal peripheral surface 13a.
- the light collecting portion 13 can be improved in light collecting performance by making the axial length of the light reflecting portion 13 sufficiently larger than the thin film layer 17.
- the axial length of the light reflecting portion 13 is preferably 4 ⁇ or more, more preferably 8 ⁇ or more.
- the axial length of the light reflecting portion 13 is 15 ⁇ , and the diameter of the light exit port 14 is 16 ⁇ .
- 11 and 12 show the light distribution characteristics of a general light source 3 including a light emitting element 6 made of a blue LED and a sealing resin 7 containing a yellow phosphor.
- FIG. 11 shows the light distribution characteristics in polar coordinates, and the vertical axis and the horizontal axis show the light intensity normalized with the light intensity on the vertical axis being 1.
- FIG. 12 shows light distribution characteristics in orthogonal coordinates, where the vertical axis represents the light intensity and the horizontal axis represents the angle ⁇ (unit: °) with respect to the optical axis.
- Ib ( ⁇ ) is the emission intensity of 450 nm that is the emission peak wavelength of the blue LED
- Iy ( ⁇ ) is the emission intensity of 560 nm that is the emission peak wavelength of the yellow phosphor.
- the light emitted from the light source 3 is dispersed to measure the light emission intensities Ib ( ⁇ ) and Iy ( ⁇ ).
- the emission intensities Ib ( ⁇ ) and Iy ( ⁇ ) in FIG. 12 are standardized so that the total luminous fluxes obtained from the integral values with respect to the angle ⁇ coincide.
- the half width at half maximum (HWHM) of the light distribution characteristic of light having a wavelength of 450 nm is about 62 °.
- the half-value half width (HWHM) of the light distribution characteristic of light having a wavelength of 560 nm is about 64 °.
- the light distribution characteristic measured at the emission peak wavelength (560 nm) of the phosphor is slightly wider.
- the directivity is slightly narrowed with light having a wavelength of 450 nm, and the directivity is slightly widened with light having a wavelength of 560 nm, but the difference is slight as shown in FIG.
- FIG. 13 is a graph showing the intensity ratio Iy ( ⁇ ) / Ib ( ⁇ ) of the emission intensities Ib ( ⁇ ) and Iy ( ⁇ ).
- the vertical axis indicates the intensity ratio
- the horizontal axis indicates the angle ⁇ (unit: °).
- An increase in the intensity ratio Iy ( ⁇ ) / Ib ( ⁇ ) corresponds to an increase in the proportion of the yellow light component at a high angle. That is, the color of the light emitted from the light source 3 is shifted to yellow at a high angle. This is a cause of color unevenness due to the light source 3.
- FIG. 14 is a diagram for explaining the light intensity of the emitted light from the reflector 10, and shows a perspective view of the inner peripheral surface 13 a of the light reflecting portion 13 of the reflector 10.
- a point light source with a light intensity per unit solid angle of I ( ⁇ ) is arranged on the focal point F of the paraboloid forming the inner peripheral surface 13a.
- the angle ⁇ is an angle with respect to the axial direction from the focal point F of the paraboloid toward the light exit port 14 and coincides with the angle with respect to the optical axis of the point light source.
- the light emission intensities Ib ( ⁇ ) and Iy ( ⁇ ) shown in FIG. 12 are substituted into the light intensity I ( ⁇ ) in the equation (5), respectively, and the light intensity Iring ⁇ of the light having a wavelength of 450 nm on the plane perpendicular to the z-axis is obtained.
- the light intensity Iring-y ( ⁇ ) of light having b ( ⁇ ) and a wavelength of 560 nm was derived.
- FIG. 15 is a diagram showing line profiles of light intensity Iring-b ( ⁇ ), Iring-y ( ⁇ ) and intensity ratio Iring-y ( ⁇ ) / Iring-b ( ⁇ ).
- the vertical axis indicates the light intensity and the intensity ratio
- the horizontal axis indicates the radius ⁇ .
- the intensity ratio Iring-y ( ⁇ ) / Iring-b ( ⁇ ) represents a color shift and increases rapidly in the vicinity of the focal point F.
- the half width at half maximum (HWHM) of a light source having an ideal Lambertian light distribution characteristic in which the emission intensity corresponding to FIG. 12 is given by cos ⁇ is 60 °.
- the light emitted in the region having a large angle ⁇ and close to the 90 ° direction (perpendicular to the z-axis) is condensed at a position near the radial center after being reflected by the inner peripheral surface 13a.
- the half-widths of the emission intensities Ib ( ⁇ ) and Iy ( ⁇ ) are slightly wider than in the case of Lambertian and are about 62 ° and about 64 °, respectively. Therefore, the radii ⁇ at which the light intensities Iring-b ( ⁇ ) and Iring-y ( ⁇ ) have the maximum values approach the z axis, and ⁇ 2.7 ( ⁇ 73 °) and ⁇ 2.6 ( ⁇ 76 °).
- the light emission intensities Ib ( ⁇ ) and Iy ( ⁇ ) of the light distribution characteristics shown in the orthogonal coordinate system of FIG. 12 are normalized so that the integrated values (total light fluxes) of the obtained light fluxes coincide with each other. For this reason, when the intensity ratio Iring-y ( ⁇ ) / Iring-b ( ⁇ ) shown in FIG. 15 is 1, this corresponds to a reference value with no bias in chromaticity. When the intensity ratio Iring-y ( ⁇ ) / Iring-b ( ⁇ ) is greater than 1, the reference value shifts to the yellow side, and when it is less than 1, the reference value shifts to the blue side.
- the intensity ratio Iring ⁇ y ( ⁇ ) / Iring ⁇ b ( ⁇ ) is smaller than 1 and the blue side There is a slight shift.
- the line profiles of the light intensities Iring-b ( ⁇ ) and Iring-y ( ⁇ ) both monotonously decrease.
- the above shows an ideal case in which a point light source is arranged at the focal point F of the inner peripheral surface 13a of the paraboloid for easy understanding.
- the light source 3 has a finite extent, and the shape of the inner peripheral surface 13a is formed with a deviation from the parabola when the light source 3 is arranged with a deviation from the focal point F or according to the processing accuracy of the reflector 10.
- these cases are also approximated to an ideal state, and yellow rings occur due to similar factors.
- the yellow ring for the light source having the blue LED and the yellow phosphor is described, the light distribution characteristic of yellow light has a spread with respect to the light distribution characteristic of blue light in other light sources as shown in FIG. In this case, yellow ring occurs similarly.
- the light distribution characteristic of blue light may be broader than the light distribution characteristic of yellow light. In this case as well, due to the same factors as described above, blue ring in which blue light is emphasized occurs, and color unevenness of illumination light occurs.
- a thin film layer 17 that scatters light is provided on the inner peripheral surface 13a of the light reflecting portion 13 of the reflector 10.
- the thin film layer 17 is formed in the entire annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the paraboloid forming the inner peripheral surface 13a toward the light exit 14.
- the reflected light having an angle ⁇ in the range of 60 ° to 90 °, which causes yellow rings, is scattered by the thin film layer 17.
- the light distribution characteristics of light having different wavelengths can be made closer to suppress the color shift of the illumination light to the yellow side, and the peak of the light intensity in this range can be reduced. Therefore, the occurrence of yellow ring can be suppressed.
- the inner peripheral surface 13a of the light reflecting portion 13 of the base material 11 formed of metal is formed on the parabolic surface, and the thin film layer 17 that scatters light is provided on the inner peripheral surface 13a.
- the thin film layer 17 is formed over the entire annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the symmetry axis (z axis) in the direction from the focal point F of the paraboloid forming the inner peripheral surface 13a toward the light exit 14. It is formed.
- the axial length of the annular region D is 2 ⁇ , where ⁇ is the distance from the focal point F to the apex of the paraboloid forming the inner peripheral surface 13a.
- the thin film layer 17 contains ceramics, the reflectance can be increased, and the light absorption loss by the thin film layer 17 can be suppressed.
- ceramics are excellent in heat resistance and light resistance, the reflector 10 having the thin film layer 17 can be used even under severe conditions due to heat generation or light emission of the high-power light source 3.
- the non-formed portion 18 of the thin film layer 17 is provided on the entire light emission port 14 side from the annular region D where the thin film layer 17 is formed. Thereby, the light absorption loss of the reflected light on the non-formation part 18 is small, and the condensing property of the reflector 10 can be improved.
- the film thickness of the thin film layer 17 it is possible to reliably reduce the color unevenness of the illumination light.
- the thin film layer 17 includes a glass binder and is mainly composed of ceramics and glass
- the thin film layer 17 can be formed at a low temperature, and the substrate 11 having a low melting point can be used.
- the thin film layer 17 can be formed at a lower temperature by applying a ceramic paint containing ceramic particles and glass raw material to the base material 11 and synthesizing the glass by a sol-gel method. Accordingly, it is possible to reduce damage due to heat such as deterioration in accuracy of the reflector 10 and oxidation.
- the base material 11 of the reflector 10 can be formed of an aluminum-based material that is inexpensive and easy to process. Therefore, the cost of the reflector 10 and the illuminating device 1 can be reduced.
- a thin film layer 17 is formed by applying a thermosetting resin containing ceramic particles to the base material 11 and then drying and curing, the damage of the reflector 10 due to heat can be reduced, and the reflector 10 and the lighting device 1 can be reduced. The cost can be further reduced.
- the protective layer 19 of the insulator of the light transmissive member or the high reflectivity member covering the inner peripheral surface 13a excluding the thin film layer 17 is provided, the reflectance and the light collecting performance are reduced due to the oxidation of the inner peripheral surface 13a. While preventing, the electrostatic withstand voltage property of the reflector 10 can be ensured.
- the protective film 19 is formed of an anodized film obtained by anodizing the base material 11 made of an aluminum-based material, a hard and excellent protective layer 19 can be formed. At this time, if the protective film 19 is formed after the thin film layer 17 is formed, the number of manufacturing steps of the reflector 10 can be reduced.
- FIG. 16 is a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the illumination device 1 according to the second embodiment.
- the same reference numerals are assigned to the same parts as those in the first embodiment shown in FIGS.
- the present embodiment is different from the first embodiment in the formation region of the thin film layer 17. Other parts are the same as those in the first embodiment.
- FIG. 16 shows the coordinates of the inner peripheral surface 13a based on the equation (2) as in FIG. 10, and the apex of the paraboloid forming the inner peripheral surface 13a is arranged at the origin.
- the thin film layer 17 is formed in the entire annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the paraboloid forming the inner peripheral surface 13a toward the light exit port. Further, the thin film layer 17 extends from the annular region D to the light emission port 14 side by a distance ⁇ .
- the entire inner peripheral surface 13 a on the light exit port 14 side with respect to the thin film layer 17 is a non-formed portion 18 of the thin film layer 17.
- the non-formation part 18 is provided in the edge part by the side of the light-projection opening 14 at least on the internal peripheral surface 13a.
- a protective layer 19 (see FIG. 2) is provided on the non-formed portion 18.
- the color unevenness of the illumination light emitted from the light exit port 14 can be reduced.
- the thin film layer 17 extends outside the annular region D, the light condensing performance of the reflector 10 is lower than that in the first embodiment, but the spot diameter of the illumination light emitted from the light exit port 14 is increased. be able to.
- the area occupancy of the thin film layer 17 inside the annular region D is larger than the outside, it is possible to suppress a decrease in light condensing performance and reduce color unevenness of illumination light.
- the thin film layer 17 outside the annular region D may be formed thinner than the inside. Thereby, the light absorption loss by the thin film layer 17 outside the annular region D can be reduced, and the decrease in the light condensing property of the reflector 10 can be suppressed.
- FIG. 17 is a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the illumination device 1 according to the third embodiment.
- the same reference numerals are assigned to the same parts as those in the first embodiment shown in FIGS.
- the present embodiment is different from the first embodiment in the formation region of the thin film layer 17. Other parts are the same as those in the first embodiment.
- FIG. 17 shows the coordinates of the inner peripheral surface 13a based on the equation (2) as in FIG. 10, and the apex of the paraboloid forming the inner peripheral surface 13a is arranged at the origin.
- the thin film layer 17 is formed in the annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the paraboloid forming the inner peripheral surface 13a toward the light exit port 14, and light from the annular region D A distance ⁇ is extended on the exit 14 side.
- the thin film layer 17 is formed in a plurality of strips arranged in parallel in the axial direction.
- the entire inner peripheral surface 13 a on the light emission port 14 side and the space between the thin film layers 17 with respect to the thin film layer 17 are non-formed portions 18 of the thin film layer 17.
- a protective layer 19 (see FIG. 2) is provided on the non-formed portion 18.
- the non-formation part 18 is provided in the edge part by the side of the light-projection opening 14 at least on the internal peripheral surface 13a.
- the color unevenness of the illumination light can be reduced as in the first embodiment. Further, since the thin film layer 17 extends outside the annular region D, the spot diameter of the illumination light emitted from the light exit port 14 can be increased.
- the area occupancy of the thin film layer 17 inside the annular region D is larger than the outside, it is possible to suppress the deterioration of the light collecting property and reduce the color unevenness of the illumination light.
- a plurality of strip-shaped thin film layers 17 may be formed only inside the annular region D, and the area occupation ratio of the thin film layer 17 outside the annular region D may be set to 0%. Further, the thin film layer 17 outside the annular region D may be formed thinner than the inside.
- FIG. 18 is a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the illumination device 1 according to the fourth embodiment.
- the same reference numerals are assigned to the same parts as those in the first embodiment shown in FIGS.
- the present embodiment is different from the first embodiment in the formation region of the thin film layer 17. Other parts are the same as those in the first embodiment.
- FIG. 18 shows the coordinates of the inner peripheral surface 13a based on the equation (2), as in FIG. 10, and the apex of the paraboloid forming the inner peripheral surface 13a is arranged at the origin.
- the thin film layer 17 is formed in the annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the paraboloid forming the inner peripheral surface 13a toward the light exit port 14, and light from the annular region D A distance ⁇ is extended on the exit 14 side.
- the thin film layer 17 is formed in a plurality of strips arranged side by side in the circumferential direction.
- the entire inner peripheral surface 13 a on the light emission port 14 side and the space between the thin film layers 17 with respect to the thin film layer 17 are non-formed portions 18 of the thin film layer 17.
- the non-formation part 18 is provided in the edge part by the side of the light-projection opening 14 at least on the internal peripheral surface 13a.
- a protective layer 19 (see FIG. 2) is provided on the non-formed portion 18.
- the color unevenness of the illumination light can be reduced as in the first embodiment. Further, since the thin film layer 17 extends outside the annular region D, the spot diameter of the illumination light emitted from the light exit port 14 can be increased.
- the area occupancy of the thin film layer 17 inside the annular region D is larger than the outside, it is possible to suppress the deterioration of the light collecting property and reduce the color unevenness of the illumination light.
- a plurality of strip-shaped thin film layers 17 may be formed only inside the annular region D, and the area occupation ratio of the thin film layer 17 outside the annular region D may be set to 0%. Further, the thin film layer 17 outside the annular region D may be formed thinner than the inside.
- FIG. 19 is a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the illumination device 1 according to the fifth embodiment.
- the same reference numerals are assigned to the same parts as those in the first embodiment shown in FIGS.
- the present embodiment is different from the first embodiment in the formation region of the thin film layer 17. Other parts are the same as those in the first embodiment.
- FIG. 19 shows the coordinates of the inner peripheral surface 13a based on the equation (2), as in FIG. 10, and the apex of the paraboloid forming the inner peripheral surface 13a is placed at the origin.
- the thin film layer 17 is formed in the annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the paraboloid forming the inner peripheral surface 13a toward the light exit port 14, and light from the annular region D A distance ⁇ is extended on the exit 14 side.
- the thin film layer 17 is formed in a plurality of dots.
- the entire inner peripheral surface 13 a on the light emission port 14 side and the space between the thin film layers 17 with respect to the thin film layer 17 are non-formed portions 18 of the thin film layer 17.
- the non-formation part 18 is provided in the edge part by the side of the light-projection opening 14 at least on the internal peripheral surface 13a.
- a protective layer 19 (see FIG. 2) is provided on the non-formed portion 18.
- the color unevenness of the illumination light can be reduced as in the first embodiment. Further, since the thin film layer 17 extends outside the annular region D, the spot diameter of the illumination light emitted from the light exit port 14 can be increased.
- the area occupancy of the thin film layer 17 inside the annular region D is larger than the outside, it is possible to suppress the deterioration of the light collecting property and reduce the color unevenness of the illumination light.
- a plurality of dot-like thin film layers 17 may be formed only inside the annular region D, and the area occupation ratio of the thin film layer 17 outside the annular region D may be set to 0%. Further, the thin film layer 17 outside the annular region D may be formed thinner than the inside.
- FIG. 20 is a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the illumination device 1 according to the sixth embodiment.
- the same reference numerals are assigned to the same parts as those in the first embodiment shown in FIGS.
- the present embodiment is different from the first embodiment in the formation region of the thin film layer 17. Other parts are the same as those in the first embodiment.
- FIG. 20 shows the coordinates of the inner peripheral surface 13a based on the equation (2) as in FIG. 10, and the apex of the paraboloid forming the inner peripheral surface 13a is arranged at the origin.
- the thin film layer 17 is formed on the entire inner peripheral surface 13a including the annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the focal point F of the parabolic surface forming the inner peripheral surface 13a toward the light exit port 14. .
- the area occupation ratio of the thin film layer 17 outside the annular region D is 100%, and the area occupation ratio of the thin film layer 17 inside the annular region D is also 100%.
- the color unevenness of the illumination light can be reduced as in the first embodiment. Further, since the thin film layer 17 extends outside the annular region D, the spot diameter of the illumination light emitted from the light exit port 14 can be increased.
- the thin film layer 17 outside the annular region D may be formed thinner than the inside.
- the focal point F of the paraboloid that forms the inner peripheral surface 13a of the light reflecting portion 13 of the reflector 10 is disposed on the opening 15, but the axial direction with respect to the opening 15 You may arrange
- the same effect can be obtained by providing the thin film layer 17 in the annular region D whose angle ⁇ with respect to the axial direction from the focal point F toward the light exit port 14 is 60 ° to 90 °. That is, by providing the thin film layer 17 at least at the end opposite to the light exit port 14 (opening 15 side), the color unevenness of the illumination light can be reduced.
- the non-formed portion 18 of the thin film layer 17 may be provided in a region opposite to the light exit port 14 with respect to the annular region D.
- the inner peripheral surface 13a is formed in a shape in which the opposite side of the light emitting port 14 is closed, and the light source 3 is installed inside the light reflecting portion 13 and near the focal point F. You may arrange in.
- FIG. 21, FIG. 22 is the perspective view and front sectional drawing which show the shape of the internal peripheral surface 13a of the light reflection part 13 of the illuminating device 1 of 7th Embodiment.
- the same reference numerals are assigned to the same parts as those in the first embodiment shown in FIGS.
- the shape of the inner peripheral surface 13a of the light reflecting portion 13 is different from that of the first embodiment.
- Other parts are the same as those in the first embodiment.
- the light reflecting portion 13 is formed in a cylindrical shape having a light exit port 14 at one end in the direction of the axis of symmetry (axis C) and an opening 15 at the other end.
- the inner peripheral surface 13 a of the light reflecting portion 13 is formed by a conical surface that rotates a straight line around the axis C.
- the light source 3 (see FIG. 2) is disposed near the center of the opening 15.
- the thin film layer 17 is formed in the entire annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the center of the opening 15 toward the light exit port 14. At this time, the area occupation ratio of the thin film layer 17 outside the annular area D is 0%, and the area occupation ratio of the thin film layer 17 inside the annular area D is 100%.
- the shape of the inner peripheral surface 13a is based on a paraboloid (shown by a broken line in FIG. 22) expressed by the equation (2) with the center of the opening 15 as the focal point F. Can be approximated.
- the distance from the focal point F of the paraboloid approximated to the inner peripheral surface 13a to the apex is ⁇ shown in Expression (1).
- the thin film layer 17 may extend from the annular region D to the light exit port 14 side, and the non-formed portion 18 is provided between the plurality of thin film layers 17. It may be provided.
- FIGS. 23 and 24 are a perspective view and a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the lighting apparatus 1 according to the eighth embodiment.
- the same reference numerals are given to the same parts as those in the seventh embodiment shown in FIGS.
- the shape of the inner peripheral surface 13a of the light reflecting portion 13 is different from that of the seventh embodiment.
- Other parts are the same as those of the seventh embodiment.
- the light reflecting portion 13 is formed in a cylindrical shape having a light exit port 14 at one end in the direction of the axis of symmetry (axis C) and an opening 15 at the other end.
- the inner peripheral surface 13a of the light reflecting portion 13 is formed in a shape in which a plurality of conical surfaces whose straight lines are rotated around the axis C are connected in the axial direction.
- the light source 3 (see FIG. 2) is disposed near the center of the opening 15.
- the thin film layer 17 is formed in the entire annular region D having an angle ⁇ of 60 ° to 90 ° with respect to the axial direction from the center of the opening 15 toward the light exit port 14.
- the shape of the inner peripheral surface 13a is based on a paraboloid (shown by a broken line in FIG. 24) expressed by the equation (2) with the center of the opening 15 as the focal point F. Can be approximated. For this reason, the reflected light having an angle ⁇ in the range of 60 ° to 90 °, which causes yellow rings, is scattered by the thin film layer 17. Therefore, color unevenness of illumination light can be reduced.
- the inner peripheral surface 13a is formed by a plurality of conical surfaces, the shape of the inner peripheral surface 13a can be made closer to a paraboloid than in the seventh embodiment, and the light collecting property can be improved.
- the thin film layer 17 may extend from the annular region D to the light exit port 14 side, and the non-formed portion 18 is provided between the plurality of thin film layers 17. It may be provided.
- FIG. 25 is a perspective view and a front sectional view showing the shape of the inner peripheral surface 13a of the light reflecting portion 13 of the illumination device 1 of the ninth embodiment.
- the same reference numerals are given to the same parts as those in the eighth embodiment shown in FIGS.
- the shape of the inner peripheral surface 13a of the light reflecting portion 13 is different from that of the eighth embodiment.
- Other parts are the same as those in the eighth embodiment.
- the inner peripheral surface 13a of the light reflecting portion 13 is formed in a shape in which a plurality of polygonal frustums are connected in the axial direction. Further, the cross-sectional shape including the symmetry axis (axis C) of the inner peripheral surface 13a is the same as that of the eighth embodiment. Thereby, the effect similar to 8th Embodiment can be acquired.
- the cross-sectional shape of the inner peripheral surface 13a can be made closer to a parabola than in the seventh embodiment, and the light collecting property can be improved.
- the thin film layer 17 may extend from the annular region D to the light exit port 14 side, and the non-formed portion 18 is provided between the plurality of thin film layers 17. It may be provided.
- the center of the opening 15 of the light reflecting portion 13 is set as the origin of the angle ⁇ indicating the range of the annular region D.
- the shifted position may be the origin of the angle ⁇ . Accordingly, the same effect can be obtained by arranging the light source 3 in the vicinity of the origin. That is, by providing the thin film layer 17 at least at the end opposite to the light exit port 14 (opening 15 side), the color unevenness of the illumination light can be reduced.
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Abstract
Description
以下に図面を参照して本発明の実施形態を説明する。図1、図2は第1実施形態の照明装置の斜視図及び正面断面図を示している。照明装置1はヒートシンク2上に光源3及びリフレクタ10が設置される。
4z=ρ2 ・・・(2)
ρ/2=cot(θ/2) ・・・(4)
=sin4(θ/2)・I(θ) ・・・(5)
次に、図16は第2実施形態の照明装置1の光反射部13の内周面13aの形状を示す正面断面図である。説明の便宜上、前述の図1~図10に示す第1実施形態と同様の部分には同一の符号を付している。本実施形態は第1実施形態に対して薄膜層17の形成領域が異なっている。その他の部分は第1実施形態と同様である。
次に、図17は第3実施形態の照明装置1の光反射部13の内周面13aの形状を示す正面断面図である。説明の便宜上、前述の図1~図10に示す第1実施形態と同様の部分には同一の符号を付している。本実施形態は第1実施形態に対して薄膜層17の形成領域が異なっている。その他の部分は第1実施形態と同様である。
次に、図18は第4実施形態の照明装置1の光反射部13の内周面13aの形状を示す正面断面図である。説明の便宜上、前述の図1~図10に示す第1実施形態と同様の部分には同一の符号を付している。本実施形態は第1実施形態に対して薄膜層17の形成領域が異なっている。その他の部分は第1実施形態と同様である。
次に、図19は第5実施形態の照明装置1の光反射部13の内周面13aの形状を示す正面断面図である。説明の便宜上、前述の図1~図10に示す第1実施形態と同様の部分には同一の符号を付している。本実施形態は第1実施形態に対して薄膜層17の形成領域が異なっている。その他の部分は第1実施形態と同様である。
次に、図20は第6実施形態の照明装置1の光反射部13の内周面13aの形状を示す正面断面図である。説明の便宜上、前述の図1~図10に示す第1実施形態と同様の部分には同一の符号を付している。本実施形態は第1実施形態に対して薄膜層17の形成領域が異なっている。その他の部分は第1実施形態と同様である。
次に、図21、図22は第7実施形態の照明装置1の光反射部13の内周面13aの形状を示す斜視図及び正面断面図である。説明の便宜上、前述の図1~図10に示す第1実施形態と同様の部分には同一の符号を付している。本実施形態は第1実施形態に対して光反射部13の内周面13aの形状が異なっている。その他の部分は第1実施形態と同様である。
次に、図23、図24は第8実施形態の照明装置1の光反射部13の内周面13aの形状を示す斜視図及び正面断面図である。説明の便宜上、前述の図21、図22に示す第7実施形態と同様の部分には同一の符号を付している。本実施形態は第7実施形態に対して光反射部13の内周面13aの形状が異なっている。その他の部分は第7実施形態と同様である。
次に、図25は第9実施形態の照明装置1の光反射部13の内周面13aの形状を示す斜視図及び正面断面図である。説明の便宜上、前述の図23、図24に示す第8実施形態と同様の部分には同一の符号を付している。本実施形態は第8実施形態に対して光反射部13の内周面13aの形状が異なっている。その他の部分は第8実施形態と同様である。
2 ヒートシンク
3 光源
4 発光モジュール
5 基板
6 発光素子
7 封止樹脂
8 枠体
10 リフレクタ
11 基材
12 外枠部
13 光反射部
13a 内周面
14 光出射口
15 開口部
17 薄膜層
18 非形成部
19 保護層
C 軸
D 環状領域
F 焦点
Claims (10)
- 軸方向の一端に開口した光出射口に向かって内周面を拡径した金属製の基材を備える照明用リフレクタにおいて、前記内周面上の少なくとも前記光出射口に対して反対側の端部にセラミックスを含む薄膜により形成されるとともに光を散乱させる薄膜層を設けたことを特徴とする照明用リフレクタ。
- 前記内周面上の少なくとも前記光出射口側の端部に前記薄膜層の非形成部を有することを特徴とする請求項1に記載の照明用リフレクタ。
- 前記内周面が放物面に形成され、該放物面の焦点から前記光出射口に向かう軸方向に対して60゜~90゜の環状領域内に前記薄膜層を形成するとともに、前記環状領域よりも前記光出射口側に前記薄膜層の非形成部を有することを特徴とする請求項1または請求項2に記載の照明用リフレクタ。
- 前記基材が前記光出射口の反対側の端部に開口部を有した筒状に形成され、前記開口部の中心から前記光出射口に向かう軸方向に対して60゜~90゜の環状領域内に前記薄膜層を形成するとともに、前記環状領域よりも前記光出射口側に前記薄膜層の非形成部を有することを特徴とする請求項1または請求項2に記載の照明用リフレクタ。
- 前記薄膜層がセラミックス及びガラスを主成分とすることを特徴とする請求項1~請求項4のいずれか記載の照明用リフレクタ。
- 前記薄膜層を除く前記内周面を被覆する保護層を設け、前記基材がアルミニウム系材料から成るとともに、前記保護層が前記基材の陽極酸化皮膜から成ることを特徴とする請求項1~請求項5のいずれかに記載の照明用リフレクタ。
- 請求項1~請求項6のいずれかに記載の照明用リフレクタと、前記照明用リフレクタの軸上であって前記光出射口に対して反対側の端部に配される光源とを備えたことを特徴とする照明装置。
- 軸方向の一端に開口した光出射口に向かって内周面を拡径した金属製の基材を備える照明用リフレクタの製造方法において、前記内周面上の少なくとも前記光出射口に対して反対側の端部に光を散乱させるガラス及びセラミックスを主成分とした薄膜層を形成する薄膜層形成工程を備え、前記薄膜層形成工程においてセラミックスの粒子及びガラス原料を含む塗料を前記内周面に塗布し、該ガラス原料からゾル・ゲル法によりガラスを合成して前記薄膜層を形成することを特徴とする照明用リフレクタの製造方法。
- 前記内周面上の前記薄膜層の非形成領域を被覆する保護層を形成する保護層形成工程を備え、前記保護層形成工程において、アルミニウムを主成分とする前記基材のアルマイト処理により陽極酸化皮膜から成る前記保護層を形成することを特徴とする請求項8に記載の照明用リフレクタの製造方法。
- 前記薄膜層形成工程の後に前記保護層形成工程を行うことを特徴とする請求項9に記載の照明用リフレクタの製造方法。
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CN201480037880.8A CN105358898B (zh) | 2013-07-30 | 2014-07-09 | 照明装置、照明用反射器及其制造方法 |
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US20160178162A1 (en) | 2016-06-23 |
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