WO2014202629A1 - Composant opto-électronique et son procédé de fabrication - Google Patents

Composant opto-électronique et son procédé de fabrication Download PDF

Info

Publication number
WO2014202629A1
WO2014202629A1 PCT/EP2014/062752 EP2014062752W WO2014202629A1 WO 2014202629 A1 WO2014202629 A1 WO 2014202629A1 EP 2014062752 W EP2014062752 W EP 2014062752W WO 2014202629 A1 WO2014202629 A1 WO 2014202629A1
Authority
WO
WIPO (PCT)
Prior art keywords
housing body
optoelectronic
semiconductor chip
solder
lead frame
Prior art date
Application number
PCT/EP2014/062752
Other languages
German (de)
English (en)
Inventor
Michael Zitzlsperger
Stephan Preuss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2014202629A1 publication Critical patent/WO2014202629A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to an optoelectronic component according to patent claim 1 and to a method for producing an optoelectronic component according to patent claim 10.
  • German priority application DE 10 2013 211 853.8 which explicitly forms part of the disclosure of the present application, also already describes an electro-opto ⁇ African device and a method for producing an optoelectronic component.
  • optoelectronic components for example light-emitting diode components
  • a lens formed by compression molding may be arranged, which may comprise silicone, for example.
  • the formation of the housing of several individual components is accompanied by high production costs.
  • An optoelectronic component comprising a first Lei ⁇ terrahmenabrough having a die receiving surface and an ers ⁇ te solder pad, and an optoelectronic Semiconductor chip, which is arranged on the chip receiving surface.
  • the first leadframe section and the opto ⁇ electronic semiconductor chip are embedded in a housing body.
  • the first solder pad is at least partially not covered by the housing body.
  • Solder contact surface on a first circumferential groove can by arranged in the first solder pad of the first lead frame portion first circumferential groove in the risk of high creep of solder along the first lead frame portion into the housing body of the opto ⁇ electronic component and to the die receiving surface of the first lead frame portion is reduced. This also reduces the risk of damage to the optoelectronic component during a soldering process.
  • the first circumferential groove interrupts during a soldering event possibly ⁇ in a liquid Lot ⁇ de capillary forces that could lead to a high creep of the solder along the outside of the first leadframe section ⁇ th. This remains the Lot on a circumscribed by the first circumferential groove Limited area of the first solder pad.
  • the optoelectronic semiconductor chip is completely embedded in the housing body.
  • no other housing ⁇ component for covering or encapsulating the optoelectronic semiconductor chip is required in the optoelectronic component thereby.
  • the optoelectronic component can advantageously be produced particularly inexpensively.
  • the housing body has an optically transparent material.
  • electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic component can thus escape from the housing body of the optoelectronic component, even if the optoelectronic component electronic semiconductor chip of the optoelectronic component is completely embedded in the housing body.
  • the housing body has silicone.
  • the housing body of the optoelectronic component can thereby be produced particularly inexpensively and simply.
  • a section of the housing body forms an optical lens.
  • the portion of the housing body may form a spherical lens.
  • the formed by the portion of the housing body of the optoelectronic construction ⁇ optical lens elements can cause a beam shaping an emitted by the optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation. Since the optical lens is formed by a portion of the Ge ⁇ pliuse stressess of the optoelectronic component can be dispensed to a provision of a separate component designed as optical lens. In this way, the optoelectronic component advantageously be ⁇ Sonder is available at low cost.
  • the first circumferential groove has a depth between 10 .mu.m and 1 mm, preferably a depth between 50 .mu.m and 200 .mu.m.
  • the first circumferential groove may have a depth of about 100 ym and a width of about 150 ym. It has been found that a configuration of the first circumferential groove with these dimensions can effectively interrupt a capillary force acting on a solder, whereby a lateral propagation of a solder is advantageously applied to a region of the first solder contact area of the first leadframe bordered by the first circumferential groove. section of the first optoelectronic component can be limited.
  • a second lead frame portion having a second solder ⁇ contact face is embedded in the housing body.
  • the second solder contact surface is at least partially not covered by the housing body.
  • the second solder contact surface ⁇ a second circumferential groove.
  • the second circumferential groove formed in the second solder contact surface effectively limits a lateral propagation of a solder to a region of the second solder contact area of the second leadframe section of the optoelectronic component delimited by the second circumferential groove.
  • the optoelectronic semiconductor chip is electrically conductively connected to the second leadframe section.
  • the optoelectronic semiconductor chip of the opto-electronic component characterized ⁇ be contacted via the second solder pad of the second lead frame portion and the first solder pad of the first lead frame portion electrically.
  • the optoelectronic semiconductor chip is connected to the second conductor frame section via a bonding wire embedded in the housing body.
  • a bonding wire embedded in the housing body.
  • a method for producing an optoelectronic component comprises steps for providing a first conductor the frame portion having a die receiving surface and an ers ⁇ th solder pad, which has a first circumferential groove on ⁇ , for arranging an optoelectronic semiconductor chip on the chip receiving surface, and for embedding the first LEI terrahmenabsacrificings and of the optoelectronic semiconductor chip in a housing body, wherein the first LötWalletflä ⁇ at least partially not covered by the housing body.
  • the opto-electronic semi-conductor chip in which ⁇ obtainable by this process opto-electronic device via the first Porterrahmenab can ⁇ cut are electrically contacted.
  • the arranged in the first solder pad of the first section Porterrahmenab ⁇ first circumferential groove advantageously prevents ⁇ , a high creep of solder along the outer surfaces of the first lead frame portion into the housing body of the optoelectronic component into it.
  • the first circumferential groove causes a lateral boundary of a propagation ei ⁇ nes solder during a Anlötvorgangs of the optoelectronic component to a circumferential groove through the first loading excluded lateral portion of the first solder pad of the first lead frame portion.
  • the housing body is formed by compression molding. Pre geous enough, this allows a low-cost mass production ⁇ .
  • the first umlau ⁇ Fende groove sets reasonable by etching on the first solder pad.
  • this enables a simple and cost-effective production of the first leadframe section.
  • the method of the opto-electro ⁇ African semiconductor chip embeds fully inserted into the housing body.
  • the method thereby requires no further steps for covering or otherwise
  • the housing body is formed so that a portion of the housing body ei ⁇ ne optical lens forms.
  • the optical lens of the optoelectronic component obtainable by the method can effect a beam shaping of an electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic component.
  • the method thereby requires no further steps for producing an optical lens and for arranging the optical lens on the optoelectronic component. As a result, the method is advantageously cost ⁇ low feasible.
  • a second leadframe section is provided with a second soldermating surface having a second circumferential groove.
  • the second lead frame portion is electrically conductively connected to the optoelectronic semiconductor chip and embedded together with the first lead frame portion and the optoelectronic semiconductor chip ⁇ rule in the housing body.
  • the second solder contact surface is at least partially not covered by the housing body.
  • the second peripheral groove arranged in the second solder contact area of the second leadframe section advantageously provides protection against creeping of a solder along the second leadframe section into the housing body of the optoelectronic device obtainable by the method during soldering of the optoelectronic component. This is achieved in that the second circumferential groove limits a lateral propagation of the solder to a region of the second solder contact area of the second leadframe section bounded by the second circumferential groove, in that the second circumferential groove interrupts a capillary force acting on the solder.
  • FIG. 1 is a sectional view of an optoelectronic compo ⁇ element; a plan view of an underside of the optoelectronic device ⁇ rule and FIG. 2.
  • Fig. 1 is a schematic sectional view of an opto-electronic component shows ⁇ 100.
  • Fig. 2 shows a schematic plan view of a see underside of the optoelectronic ⁇ construction elements 100.
  • the opto-electronic device 100 may be at ⁇ play, a light-emitting diode device.
  • the optoelekt ⁇ elec- tronic device 100 is configured as a SMD component which is suitable for surface mounting, for example for surface mounting by reflow soldering (reflow soldering).
  • the optoelectronic device 100 includes a optoelekt ⁇ tronic semiconductor chip 200.
  • the optoelectronic semiconductor chip 200 may be for example a light emitting diode chip (LED chip).
  • the optoelectronic semiconductor chip 200 is designed to emit electromagnetic radiation during operation of the optoelectronic component 100.
  • Technologiesswei ⁇ se may be the optoelectronic semiconductor chip is excluded 200 to emit visible light.
  • the optoelectronic semiconductor chip 200 has a top side 210 and a bottom side opposite the top side 210 220 on.
  • the upper side 210 of the optoelectronic semiconductor chip 200 forms a radiation emission surface of the opto ⁇ electronic semiconductor chip 200. Electromagnetic radiation emitted by the optoelectronic semiconductor chip 200 is emitted at the radiation emission surface formed by the upper side 210.
  • a first electrical contact surface 230 is arranged at the upper side 210 of the optoelectronic semiconductor chip 200.
  • a second electrical contact surface 240 is arranged on the underside 220 of the optoelectronic semiconductor chip 200.
  • the first electrical contact surface 230 and the second elekt ⁇ generic contact surface 240 are used for electrically contacting of the optoelectronic semiconductor chip 200 via the first electrical contact surface 230 and the second electrical ⁇ specific contact surface 240, an electrical voltage to the optoelectronic semiconductor chip 200 are applied, to cause emission of electromagnetic radiation through the optoelectronic semiconductor chip 200.
  • the optoelectronic device 100 further comprises a lead frame having a first lead frame portion 400 and a second lead frame portion 500.
  • the first Porterrah ⁇ menab mustard 400 and the second lead frame portion 500 of the lead frame have an electrically conductive material.
  • first lead frame portion 400 and the second lead frame portion 500 may include copper.
  • the first conductor frame portion 400 and the second lead frame ⁇ section 500 may also include a solderable corneanme- metallization.
  • the first leadframe section 400 and the second leadframe section 500 may have surface metallization with an alloy comprising nickel, palladium, and gold. The first lead frame portion 400 and the second lead frame portion 500 are physically separated from each other and
  • the first Porterrahmenab ⁇ section 400 and the second conductor frame section 500 of the LEI terrahmens can be made for example by punching and / or etching.
  • the first conductor frame portion 400 has a die receiving surface 410 and the chip seating surface 410 against ⁇ opposed first solder pad 420 on.
  • the optoelectronic ⁇ specific semiconductor chip 200 is disposed on the die receiving surface 410 of the first lead frame portion 400th In this case, the underside 220 of the optoelectronic semiconductor chip 200 faces the chip receiving surface 410 of the first leadframe section 400 and is connected thereto via an electrically conductive connection means 260.
  • the connecting means 260 may be, for example, a solder or a conductive adhesive.
  • the second leadframe section 500 has a bonding surface 510 and a second soldering contact surface 520 lying opposite the bonding surface 510. Which is arranged on the upper side 210 of the opto ⁇ electronic semiconductor chip 200 first electrical ⁇ specific contact surface 230 of the optoelectronic semiconductor chip 200 is electrically connected with the bonding surface 510 of the second lead frame portion 500 by means of a bonding wire 250th This provides an electrically conductive connection between the second solder pad 520 of the second lead frame portion 500 and the first electrical Kon ⁇ clock face 230 of the optoelectronic semiconductor chip 200.
  • the first conductor frame portion 400, the second lead frame ⁇ portion 500 and the optoelectronic semiconductor chip 200 are in a housing body 300 of the embedded optoelectronic device 100.
  • the housing body 300 has a Top 310 and one of the top 310 opposite bottom 320 on.
  • the first solder contact surface 420 of the first leadframe section 400 is at least partially not covered by the housing body 300 and accessible on the underside 320 of the housing body 300.
  • the second clock Lötkon ⁇ surface 520 of the second lead frame portion 500 is ⁇ least partially not covered by the housing body 300 and accessible at the bottom 320 of the housing body 300th
  • the first solder pad 420 of the first lead frame section 400 and the second solder pad 520 of the second lead frame section 500 terminate approximately flush with the underside 320 of the housing body 300.
  • the remaining parts of the first lead frame section 400 and the second lead frame section 500 are preferably completely embedded in the housing body 300.
  • Semiconductor chip 200 is preferably completely embedded in the housing ⁇ body 300.
  • the housing body 300 preferably has a material that is transparent to electromagnetic radiation emitted by the optoelectronic semiconductor chip 200 of the optoelectronic component 100.
  • the housing body 300 may include, for example, silicone.
  • the housing body 300 may be produced, for example, by an injection molding process, by a transfer molding process, or by a compression molding process.
  • the first leadframe section 400, the second leadframe section 500, the optoelectronic semiconductor chip 200 and the bonding wire 250 extending between the first electrical contact surface 230 of the optoelectronic semiconductor chip 200 and the bonding surface 510 of the second leadframe section 500 have already been formed during the production of the housing body 300 embedded the material of the housing body 300.
  • the material of the housing body 300 also covers the radiation emission area of the optoelectronic semiconductor device. chips 200 forming upper surface 210 of the optoelectronic semiconductor ⁇ semiconductor chip 200. A over the top 210 of the opto-electro ⁇ African semiconductor chips 200 arranged in part of the case body 300 at the top 310 of the housing body 300 forms an optical lens 330.
  • the optical lens 330 is the top 310 of the housing body 300 convex. So that the optical lens 330 of the forming portion GeHousekör ⁇ pers 300 above the top surface 201 of the optoelectronic semiconductor chip 200 ⁇ forms a plano-convex convergent lens.
  • the optical lens 330 can also be formed with another form ⁇ or omitted entirely.
  • the optoelectronic component 100 can be produced particularly inexpensively. Since the optical lens 330 of the optoelectronic component 100 is formed by a portion of the housing body 300, the optoelectronic device 100 advantageously may be also formed with particularly com pact ⁇ dimensions.
  • gaps may be formed in the region of the interfaces between the lead frame sections 400, 500 and the material of the package body 300. This is the case in particular when the material of the housing body 300 comprises silicone.
  • the first solder pad point 420 of the first lead frame portion 400 and the second Lötkon ⁇ clock face 520 of the second lead frame portion 500 structural turing on which a penetration of solder to any gaps formed between the lead frame portions 400, 500 and the material of the Prevent housing body 300.
  • a first circumferential groove 430 is formed.
  • the first circumferential groove 430 divides the first solder contact surface 420 into an inner region 440 and an outer region 450.
  • the inner region 440 of the first solder contact surface 420 is surrounded by the first circumferential groove 430 in an annular manner.
  • the outer region 450 of the first solder contact area 420 adjoins the outer edges of the first solder contact area 420.
  • the first circumferential groove 430 extends mög ⁇ as near at the outer edges of the first solder pad 420 so that the inner portion 440 as large a part of the first solder pad 420 and the outer portion
  • the first circumferential groove 430 has a width 431 in the direction parallel to the first solder contact area 420. In the direction perpendicular to the first solder contact surface 420, the first circumferential groove 430 has a depth 432.
  • the depth 432 of the ERS ⁇ th circumferential groove is preferably between 10 .mu.m and 1 mm, more preferably between 50 .mu.m and 200 .mu.m.
  • the depth 432 of the first circumferential groove 430 may be 100 ym.
  • the width 431 of the first circumferential groove 430 may be 150 ym, for example.
  • the second solder contact surface 520 of the second Porterrahmenab ⁇ section 500 has a second circumferential groove 530.
  • the second circumferential groove 530 divides the second solder contact ⁇ surface 520 in an inner region 540 and an outer region 550.
  • the inner region 540 is surrounded annularly by the second order ⁇ running groove 530th
  • the second groove 530 preferably runs as close as possible to the outer edges of the second solder contact area 520, so that the inner area 540 forms as large a part of the second solder contact area 520 and the outer area 550 forms the smallest possible part of the second solder contact area 520.
  • the second circumferential groove 530 in the second solder pad 520 of the second lead frame portion 500 may have a width and a depth whose values are in the width 431 and the depth 432 of the first circumferential groove 430 in the first solder pad 420 of the first lead frame portion 400 are angege ⁇ given size ranges.
  • the first circumferential groove 430 of the first Porterrahmenab- section 400 and the second circumferential groove 530 of the second lead frame portion 500 are free from the material of Ge ⁇ koruse stresses 300, so do not be ⁇ covered by the housing body 300th
  • the first circumferential groove 430 of the first Porterrahmenab ⁇ section 400 and the second circumferential groove 530 of the second lead frame portion 500 may have been created for example by an etching process.
  • the first circumferential groove 430 and the second circumferential groove 530 may have been set at 500 ⁇ already during manufacture of the first lead frame portion 400 and the second lead frame portion.
  • FIG. 1 shows a schematic sectional view of a printed circuit board 600.
  • the printed circuit board 600 can also be referred to as a PCB.
  • a first soldering surface 610 and a second soldering surface 620 are arranged on the upper side of the printed circuit board 600.
  • the first soldering surface 610 and the second soldering surface 620 are respectively with further electrical connection elements, such as tracks, the circuit board 600 electrically connected, which is not shown in the schematic representation of FIG.
  • the first solder pad 610 points in the direction parallel to the top side of the printed circuit board 600 ⁇ lateral dimensions which correspond approximately to the lateral dimensions of the inner region 440 of the first solder pad 420 of the first lead frame portion 400 of the optoelectronic component 100th
  • the second solder pad 620 of the printed circuit board 600 has in direction pa ⁇ rallel to the top surface of the circuit board 600 lateral Abmessun ⁇ gene, which portion is approximately the lateral dimensions of the inner region 540 of the second solder pad 520 of the lead frame 500 of the optoelectronic device 100 speak ent ⁇ .
  • the distance between the first solder pad 610 and the second solder pad 620 of the printed circuit board 600 corresponds et ⁇ wa to the distance between the inner portion 440 of the first solder pad 420 of the optoelectronic component 100 and the inner portion 540 of the second solder pad 520 of the optoelectronic component 100.
  • a solder stop material 630 is arranged on the upper side of the printed circuit board 600.
  • the optoelectronic component 100 is mounted on an upper side of the printed circuit board 600.
  • the optoelectronic ⁇ specific component 100 is such arranged on the upper side of the circuit board 600, that the inner region 440 of the first solder pad 420 through the first solder pad 610 and the inherent re ⁇ area 540, the second solder pad 520 on the second soldering surface 620 disposed is. Then, the first solder pad 420 and the second solder pad 520 at ⁇ example by means of reflow soldering at the first
  • Soldering surface 610 and the second soldering surface 620 attached.
  • first soldering surface 610 and the inner region 440 of the first soldering contact surface 420 as well as between the second soldering surface 620 and the inner region 540 of FIG second solder contact surface 520 each come to the formation of Ka ⁇ pillar practicen that promote a lateral spread of the liquid solder.
  • the optoelectronic component 100 first the first leadframe section 400 and the second leadframe section 500 are provided.
  • the optoelectronic ⁇ specific semiconductor chip 200 is arranged in the described manner on the die receiving surface 410 of the first lead frame portion 400 and connected by means of the connecting means 260 with this.
  • the first electrical contact surface 230 arranged on the upper side 210 of the optoelectronic semiconductor chip 200 is electrically conductively connected to the bonding surface 510 of the second conductor frame section 500 by means of the bonding wire 250.
  • the optoelectronic ⁇ African semiconductor chip 200, the first lead frame portion 400 and the second lead frame portion 500 are embedded in the housing ⁇ body 300.
  • the invention has been further illustrated and described with reference to the preferredariessbei ⁇ games. However, the invention is not limited to the disclosed examples. Rather, other variations can be deducted from this by the expert. ,

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant opto-électronique comprenant une première partie de grille de connexion, qui présente une surface de réception de puce et une première surface de contact à braser, ainsi qu'une puce à semi-conducteur opto-électronique qui est disposée sur la surface de réception de puce. Selon l'invention, la première partie de grille de connexion et la puce à semi-conducteur opto-électronique sont insérées dans un corps de boîtier. La première surface de contact à braser n'est pas recouverte, au moins partiellement, par le corps de boîtier. En outre, la première surface de contact à braser présente une première rainure périphérique.
PCT/EP2014/062752 2013-06-21 2014-06-17 Composant opto-électronique et son procédé de fabrication WO2014202629A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201310211853 DE102013211853A1 (de) 2013-06-21 2013-06-21 Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102013211853.8 2013-06-21

Publications (1)

Publication Number Publication Date
WO2014202629A1 true WO2014202629A1 (fr) 2014-12-24

Family

ID=50943331

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2014/062752 WO2014202629A1 (fr) 2013-06-21 2014-06-17 Composant opto-électronique et son procédé de fabrication

Country Status (2)

Country Link
DE (1) DE102013211853A1 (fr)
WO (1) WO2014202629A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020031869A1 (en) * 1999-09-01 2002-03-14 Masanori Minamio Leadframe and method for manufacturing resin-molded semiconductor device
US20080290485A1 (en) * 2007-05-25 2008-11-27 Il Kwon Shim Integrated circuit package system with relief
JP2009049352A (ja) * 2007-08-22 2009-03-05 Yiguang Electronic Ind Co Ltd 電子デバイス装置およびその製造方法
US20090091007A1 (en) * 2007-10-05 2009-04-09 Texas Instruments Incorporated Semiconductor Device Having Grooved Leads to Confine Solder Wicking
US20120080674A1 (en) * 2010-01-29 2012-04-05 Kabushiki Kaisha Toshiba Led package

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183588B2 (en) * 2004-01-08 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emission device
US8625053B2 (en) * 2010-06-28 2014-01-07 Lg Display Co., Ltd. Light emitting diode and backlight unit and liquid crystal display device with the same
TWM400099U (en) * 2010-09-27 2011-03-11 Silitek Electronic Guangzhou Lead frame, package structure and lighting device thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020031869A1 (en) * 1999-09-01 2002-03-14 Masanori Minamio Leadframe and method for manufacturing resin-molded semiconductor device
US20080290485A1 (en) * 2007-05-25 2008-11-27 Il Kwon Shim Integrated circuit package system with relief
JP2009049352A (ja) * 2007-08-22 2009-03-05 Yiguang Electronic Ind Co Ltd 電子デバイス装置およびその製造方法
US20090091007A1 (en) * 2007-10-05 2009-04-09 Texas Instruments Incorporated Semiconductor Device Having Grooved Leads to Confine Solder Wicking
US20120080674A1 (en) * 2010-01-29 2012-04-05 Kabushiki Kaisha Toshiba Led package

Also Published As

Publication number Publication date
DE102013211853A1 (de) 2014-12-24

Similar Documents

Publication Publication Date Title
EP2396832B1 (fr) Dispositif semi-conducteur optoélectronique encapsulé à couche d'arrêt brasée, et procédé correspondant
DE102016119002B4 (de) Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
WO2015189216A1 (fr) Composant semi-conducteur apte à être monté en surface et son procédé de fabrication
DE10243247A1 (de) Leadframe-basiertes Bauelement-Gehäuse, Leadframe-Band, oberflächenmontierbares elektronisches Bauelement und Verfahren zur Herstellung
WO2011157522A1 (fr) Composant optoélectronique pouvant être monté en surface et procédé de fabrication d'un composant optoélectronique pouvant être monté en surface
WO2017032772A1 (fr) Composant laser et procédé de réalisation
DE112014004347B4 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2015024860A1 (fr) Diode laser se refroidissant également le long de ses faces latérales
WO2017060280A1 (fr) Élément optoélectronique doté d'un châssis de connexion pourvu d'une structure de renforcement
WO2016202917A1 (fr) Procédé de fabrication d'un composant optoélectronique et composant optoélectronique
WO2014122021A1 (fr) Composant laser et procédé de production
EP2452547B1 (fr) Composant électronique
WO2012007271A2 (fr) Dispositif support pour une puce semi-conductrice, composant électronique comportant un dispositif support et composant optoélectronique comportant un dispositif support
WO2014127953A1 (fr) Composant semi-conducteur optoélectronique et son procédé de fabrication
DE102013207111B4 (de) Optoelektronisches Bauelement
EP2260511B1 (fr) Agencement de composants et procédé de fabrication d un agencement de composants
DE112014005124B4 (de) Optoelektronisches Bauelement
WO2014202629A1 (fr) Composant opto-électronique et son procédé de fabrication
WO2015117947A1 (fr) Composant optoélectronique et procédé de fabrication dudit composant
DE102014116080A1 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE10319782B4 (de) Optoelektronisches Halbleiterbauelement mit einem Chipträgerelement
WO2015117946A1 (fr) Composant optoélectronique et procédé de fabrication dudit composant
DE102006015241A1 (de) Halbleiterbauteil mit einem Kunststoffgehäuse und teilweise in Kunststoff eingebetteten Außenkontakten sowie Verfahren zur Herstellung des Halbleiterbauteils
DE102010046088A1 (de) Gehäuse und Verfahren zum Herstellen eines Gehäuses
WO2015114063A1 (fr) Composant optoélectronique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14730554

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14730554

Country of ref document: EP

Kind code of ref document: A1