WO2014201777A1 - 真空干燥装置、真空干燥方法以及光刻方法 - Google Patents

真空干燥装置、真空干燥方法以及光刻方法 Download PDF

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Publication number
WO2014201777A1
WO2014201777A1 PCT/CN2013/083907 CN2013083907W WO2014201777A1 WO 2014201777 A1 WO2014201777 A1 WO 2014201777A1 CN 2013083907 W CN2013083907 W CN 2013083907W WO 2014201777 A1 WO2014201777 A1 WO 2014201777A1
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Prior art keywords
photoresist
vacuum
vacuum drying
chamber
solvent
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PCT/CN2013/083907
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English (en)
French (fr)
Inventor
陆忠
王军才
陈巍
李炳天
黄丽娟
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum

Definitions

  • the present invention relates to the field of substrate manufacturing technology, and in particular, to a vacuum drying device, a vacuum drying method, and a photolithography method. Background technique
  • the pattern on the substrate is generally formed by a photolithography process.
  • the specific process flow is: first, coating a photoresist on the substrate, then vacuum drying the photoresist on the substrate, and finally pre-baking, exposing, and developing. A desired pattern is formed on the substrate.
  • Vacuum drying is an intermediate part of the lithography process for removing the solvent in the photoresist. Therefore, the drying effect of the photoresist directly affects the properties of the photoresist and the subsequent exposure and development effects.
  • vacuum drying is generally performed in a vacuum drying apparatus.
  • the inventors of the present invention have found that when the photoresist is dried by the existing vacuum drying apparatus, since vacuum drying is performed from the surface of the photoresist, it is easy to The surface of the photoresist forms a cured film, so that the solvent in the photoresist in the cured film is hard to be volatilized, thereby affecting the slope angle of the dried photoresist. For example, FIG.
  • FIG. 1 shows a slope angle profile of a photoresist during vacuum drying at room temperature; as shown in FIG. 1, the photoresist 2 is located on the substrate 1, and the solvent remains in the photoresist 2 after drying.
  • the slope angle a of the engraved glue is 20° ⁇ 30°. It can be seen that the slope angle of the photoresist is small, which affects the lithography precision. Summary of the invention
  • An object of the present invention is to provide a vacuum drying apparatus and a vacuum drying method for removing a solvent in a photoresist, and a photolithography method using the vacuum drying method for improving lithography precision.
  • the present invention provides the following technical solutions:
  • a vacuum drying device for removing a solvent in a photoresist comprising: a vacuum chamber having a vent hole and a chamber door, and a vacuuming device in communication with the vent hole, the vacuum drying device being characterized by A heating assembly is provided in the vacuum chamber.
  • the heating assembly is located at the bottom of the vacuum chamber, and the chamber door is located at The top of the vacuum chamber is opened on the side wall of the vacuum chamber.
  • the heating component is a microwave heating component, an infrared heating component or a resistance heating component.
  • the vacuum drying apparatus further includes: a lead screw fixedly connected to the chamber door, and a motor connected to the lead screw drive, wherein the lead screw drives the chamber door under the driving of the motor, so that The chamber door opens or closes.
  • the vacuum chamber has a degree of vacuum of 500 Pa to 26 Pa.
  • the heating element has a heating temperature of 30 ° C to 90 ° C.
  • the present invention also provides a vacuum drying method for removing a solvent in a photoresist, comprising the steps of: placing a substrate coated with a photoresist into a vacuum chamber; and drawing a vacuum chamber into a vacuum, the vacuum
  • the drying method is characterized in that the photoresist is heated while evacuating the vacuum chamber.
  • the vacuum degree of the vacuum chamber is controlled to be 500 Pa to 26 Pa.
  • the heating temperature of the photoresist is from 30 ° C to 90 ° C.
  • the heating temperature is 70 ° C ⁇ 9 (TC.
  • the heating temperature is 30 ° C to 40 ° C.
  • the invention also provides a photolithography method comprising: coating a photoresist on a substrate; removing the solvent in the photoresist by the vacuum drying method; and performing prebaking on the solvent-removed photoresist , exposure, development and post-baking procedures.
  • the method further includes: performing a cleaning and dehydration drying process on the substrate.
  • the vacuum drying is performed under heating conditions, wherein preferably, the degree of vacuum can be controlled between 500 Pa and 26 Pa, The heating temperature is controlled between 30 ° C and 90 ° C, so that heating and vacuum drying act on the photoresist at the same time to reduce the generation of the photoresist on the surface of the photoresist, thereby facilitating the evaporation of the solvent in the photoresist, thereby reducing the The amount of solvent remaining in the photoresist increases the resist slope angle, which in turn improves the lithography accuracy.
  • the vacuum drying device provided by the present invention, after drying The residual amount of solvent in the photoresist is small, so that the adhesion of the photoresist can be improved; and, because the residual amount of the solvent in the photoresist after drying is small, the solvent in the photoresist after drying is absorbed. The amount of exposure is reduced, so that the amount of exposure required in the exposure process can be reduced.
  • Figure 1 is a topographical view of the slope of a photoresist during vacuum drying at room temperature
  • FIG. 2 is a schematic structural view of a vacuum drying device according to an embodiment of the present invention
  • FIG. 3 is a flow chart of a vacuum drying method according to an embodiment of the present invention
  • Figure 4 is a topographical view of the slope of the photoresist after vacuum drying at a heating temperature of 30 ° C ⁇ 9 (TC);
  • FIG. 5 is a flowchart of a photolithography method according to an embodiment of the present invention.
  • the present invention provides a vacuum drying device and a vacuum drying method, and the vacuum drying device is used to vacuum dry the photoresist.
  • the photoresist is heated to reduce the generation of a surface-hardened film of the photoresist, thereby reducing the amount of residual solvent in the photoresist, thereby improving the lithography precision.
  • the vacuum drying apparatus includes: a vacuum chamber 20 having a vent hole 21 and a chamber door 22, a vacuuming device (not shown) communicating with the vent hole 21, and a heating assembly 30 disposed in the vacuum chamber 20.
  • the heating assembly 30 is located at the bottom of the vacuum chamber 20, the chamber door 22 is located at the top of the vacuum chamber 20, and the venting opening 21 is opened on the side wall of the vacuum chamber 20.
  • the substrate coated with the photoresist is placed in the vacuum chamber 20 through the chamber door 22, and the vacuum chamber is evacuated by a vacuuming device, so that the vacuum in the vacuum chamber is preferably introduced.
  • the photoresist is heated by the heating assembly 30, and the heating temperature is preferably between 30 ° C and 90 ° C, so that heating and vacuum drying simultaneously act on the photoresist to reduce light.
  • the same vacuum pumping device withdraws the solvent volatilized from the photoresist through the vent hole 21 out of the vacuum chamber 20, and thus, while heating the photoresist on the substrate, it will also The solvent volatilized in the photoresist is extracted from the vacuum chamber 20, and the solvent in the photoresist can be quickly removed, the solvent residue in the photoresist is reduced, and the gradient angle of the photoresist is increased. Since the gradient angle of the photoresist is larger, that is, the closer the edge contours of the upper and lower surfaces of the photoresist are, the increased photoresist slope angle can improve the lithography precision.
  • the heating assembly is a microwave heating assembly, an infrared heating assembly or a resistance heating assembly.
  • the vacuum drying apparatus further includes: a lead screw 40 fixedly coupled to the chamber door 22, and a motor 41 drivingly coupled to the lead screw 40, the wire
  • the lever 40 drives the chamber door 22 under the driving of the motor 41 to open or close the chamber door 22.
  • the present invention also provides a vacuum drying method, which uses the vacuum drying device provided in the above embodiment to vacuum dry the photoresist.
  • a vacuum drying method for removing a solvent in a photoresist includes: Step 10: placing a substrate coated with a photoresist into a vacuum chamber;
  • Step 1 Vacuum the vacuum chamber while heating the photoresist.
  • the vacuum drying is under heating conditions.
  • the photoresist-coated substrate is vacuumed in a vacuum chamber having a degree of vacuum of 500 Pa to 26 Pa and a heating temperature of 30 to 90 ° C. Drying, heating facilitates evaporation of the solvent in the photoresist, and the solvent volatilized from the photoresist is evacuated from the vacuum chamber by vacuum drying.
  • the generation of the surface hardening film of the photoresist can be reduced, the solvent evaporation in the photoresist can be facilitated, the solvent residue in the photoresist can be reduced, and the photoresist slope angle is increased. Thereby, the lithography precision is improved. It should be noted that the setting of the above vacuum degree may be set according to the process requirements, and is well known to those skilled in the art, and details are not described herein again.
  • the slope angle topography of the photoresist after the vacuum drying is performed at a temperature of 30 ° C to 9 (the TC is shown; wherein the photoresist 2 is located on the substrate 1 and is used Between 30 ° C and 9 (the heating temperature of TC is vacuum dried after the photoresist is applied, the slope angle b of the photoresist is 50 ° ⁇ 60 °, and the vacuum is dried at room temperature in the prior art, and the photoresist is dried after drying.
  • the slope angle a is 20° to 30°, and the solvent residual amount in the photoresist is significantly reduced after drying, thereby significantly increasing the slope angle of the photoresist, thereby improving the lithography precision. Further, the embodiment is adopted.
  • the vacuum drying method is provided, since the residual amount of the solvent in the photoresist after drying is small, thereby improving the adhesion of the photoresist; and at the same time, the residual solvent in the photoresist after drying is small, so that the lithography after drying The amount of exposure absorbed by the solvent in the gel is reduced, so that the amount of exposure required in the exposure process can be reduced.
  • the heating temperature can be selected according to the different composition and process requirements of the photoresist, and the heating temperature of the photoresist of different compositions is also different; preferably, when the photosensitive resin in the photoresist is a polypropylene resin, the heating temperature is preferred.
  • the temperature is 70 ° C ⁇ 90 ° C
  • the specific heating temperature can be 70 ° C, 75 ° C, 80. C, 85 ° C and 90 ° C
  • the preferred heating temperature is 30 ° C ⁇ 4 (TC, the specific heating temperature can be 30 V, 35 ° C, 40 ° C.
  • the solvent in the photoresist can be quickly volatilized under the action of vacuum and heating.
  • the photoresist has a slope angle b of 50° to 60°, which is a significant increase in the slope angle of the photoresist compared to the photoresist gradient angle of 20° to 30° in the background art.
  • the edges of the upper and lower surfaces of the photoresist are similar in profile, which improves the precision of the lithography.
  • the photoresist generally includes: a photosensitive resin, a sensitizer, and a solvent. After the photosensitive resin is exposed to light, a curing reaction occurs in the exposed region to change the solubility and affinity of the photosensitive resin.
  • the photolithography process further comprises: cleaning the substrate 12 and dehydrating the 13 steps to facilitate subsequent coating of the photoresist; after vacuum drying the photoresist, the photolithography process is further The method includes: prebaking 14, exposure 15, development 16 and post-baking 17 steps to form a desired photoresist pattern on the substrate.
  • vacuum drying is performed under heating conditions, such that the vacuum in the vacuum chamber is between 500 Pa and 26 Pa, and the heating temperature is between 30 ° C and 9 ( Between TC, heating and vacuum drying are applied to the photoresist at the same time to reduce the generation of the photoresist on the surface of the photoresist, facilitating the evaporation of the solvent in the photoresist, thereby reducing the solvent residue in the photoresist and increasing the lithography.
  • the rubber slope angle improves the lithography precision.
  • the residual amount of the solvent in the photoresist after drying is small, so that the adhesion of the photoresist can be improved; Since the residual amount of the solvent in the photoresist after drying is small, the amount of exposure absorbed by the solvent in the photoresist after drying is reduced, thereby reducing the exposure required in the exposure process, and those skilled in the art can carry out various kinds of the present invention. Modifications and variations are possible without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and the modifications

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

一种真空干燥装置，包括：具有排气孔和室门的真空室，与排气孔联通的抽真空装置，以及设置于真空室内的加热组件；一种利用干燥装置进行真空干燥的方法，在对涂覆有光刻胶的基板进行真空干燥时，使加热和真空干燥同时作用在光刻胶上，干燥过程中优选真空度为500Pa-26Pa，优选加热温度为30°C-90°C，以减少硬化膜的产生，从而减少光刻胶中溶剂的残留量，提高光刻精度。

Description

真空干燥装置、 真空干燥方法以及光刻方法 技术领域
本发明涉及基板制造技术领域， 特别涉及一种真空干燥装置、 真空干燥方法以及光刻方法。 背景技术
目前， 基板上图案一般是通过光刻工艺形成的， 具体工艺流程 为：首先在基板上涂覆光刻胶，然后对基板上的光刻胶进行真空干燥， 最后经过预烘、 曝光、 显影后在基板上形成所需的图案。
真空干燥是光刻工艺中的一个中间环节， 用于去除光刻胶中的 溶剂， 因此， 对光刻胶的干燥效果将直接影响光刻胶的性质以及后续 曝光、显影的效果。 目前，真空干燥一般是在真空干燥装置中完成的， 本申请发明人发现， 采用现有的真空干燥装置对光刻胶进行干燥时， 因真空干燥是从光刻胶表面作用的，因此易在光刻胶的表面形成硬化 膜， 使处于硬化膜内的光刻胶中的溶剂很难挥发出去， 从而影响经干 燥后的光刻胶的坡度角 （Prof i l e ) 。 例如， 图 1示出了常温真空干 燥时光刻胶的坡度角形貌图； 如图 1所示， 光刻胶 2位于基板 1上， 因干燥后光刻胶 2中的溶剂残留较多，光刻胶的坡度角 a为 20° ~30° ， 可见， 光刻胶的坡度角较小， 导致影响光刻精度。 发明内容
本发明的目的在于提供一种用于去除光刻胶中的溶剂的真空干 燥装置和真空干燥方法， 以及利用该真空干燥方法的光刻方法， 用以 提高光刻精度。
为了实现上述目的， 本发明提供以下技术方案：
一种用于去除光刻胶中的溶剂的真空干燥装置， 包括： 具有排 气孔和室门的真空室， 以及与所述排气孔连通的抽真空装置， 该真空 干燥装置的特征在于在所述真空室内设置加热组件。
优选地， 所述加热组件位于所述真空室底部， 所述室门位于所 述真空室的顶部， 所述排气孔开设在所述真空室的侧壁上。
优选地， 所述加热组件为微波加热组件、 红外加热组件或电阻 加热组件。
进一步地， 上述真空干燥装置还包括： 与所述室门固定连接的 丝杠， 以及与所述丝杠传动连接的电机， 所述丝杠在所述电机的驱动 下带动所述室门， 使所述室门打开或闭合。
优选地， 所述真空室的真空度为 500Pa~26Pa。
优选地， 所述加热组件的加热温度为 30°C ~90°C。
本发明同时还提供了一种用于去除光刻胶中的溶剂的真空干燥 方法， 包括步骤： 将涂覆有光刻胶的基板放入真空室； 以及将真空室 抽成真空， 所述真空干燥方法的特征在于， 在将真空室抽成真空的同 时对光刻胶进行加热。
优选地， 将真空室的真空度控制在 500Pa~26Pa。
优选地， 对光刻胶的加热温度为 30°C ~90°C。
优选地， 当所述光刻胶中感光树脂为聚丙烯树脂时， 所述加热 温度为 70°C ~9(TC。
优选地， 当所述光刻胶中感光树脂为酚醛树脂时， 所述加热温 度为 30°C ~40 °C。
本发明同时还提供了一种光刻方法， 包括： 在基板上涂覆光刻 胶； 采用上述的真空干燥方法来去除光刻胶中的溶剂； 以及对去除了 溶剂的光刻胶执行预烘、 曝光、 显影和后烘工序。
进一步地， 在基板上涂覆光刻胶之前， 还包括： 对基板进行清 洗和脱水干燥工序。
采用本发明提供的真空干燥装置对涂覆在基板上的光刻胶进行 干燥时， 真空干燥是在加热的条件下进行的， 其中， 优选地可以将真 空度控制在 500Pa~26Pa之间， 将加热温度控制在 30°C ~90°C之间， 使得加热和真空干燥同时作用在光刻胶上，以减少光刻胶表面硬化膜 的产生， 便于光刻胶中溶剂的挥发， 从而减少了光刻胶中的溶剂残留 量， 增加了光刻胶坡度角， 进而提高了光刻精度。 此外， 采用本发明 提供的真空干燥装置对涂覆在基板上的光刻胶进行干燥时，因干燥后 光刻胶中的溶剂残留量很少， 从而可以改善光刻胶的粘附性； 而且， 因干燥后光刻胶中的溶剂残留量很少，使得干燥后光刻胶中的溶剂所 吸收的曝光量减少， 从而可以减少曝光工序中所需的曝光量。 附图说明
图 1为常温真空干燥时光刻胶的坡度角形貌图；
图 2为本发明实施例提供的一种真空干燥装置的结构示意图； 图 3为本发明实施例提供的真空干燥方法的流程图；
图 4 为在加热温度为 30°C ~9(TC的情况下进行真空干燥后的光 刻胶的坡度角形貌图；
图 5为本发明具体实施例提供的光刻方法的流程图。
附图标记：
1-基板， 2光刻胶， 20-真空室， 21 -抽气孔， 22-室门， 30-加热 组件，
40-丝杆， 41-电机。 具体实施方式
为了减少真空干燥后光刻胶中溶剂的残留量， 提高光刻精度， 本发明提供了一种真空干燥装置及真空干燥方法，采用该真空干燥装 置， 在对光刻胶进行真空干燥的同时对该光刻胶进行加热， 以减少光 刻胶表面硬化膜的产生， 从而减少光刻胶中溶剂的残留量， 进而提高 光刻精度。
为了使本领域技术人员更好的理解本发明的技术方案， 下面结 合说明书附图对本发明实施例进行详细的描述。
请参阅图 2，示出了本发明实施例提供的一种真空干燥装置的结 构示意图。该真空干燥装置包括： 具有排气孔 21和室门 22的真空室 20， 与排气孔 21连通的抽真空装置 （图中未画出） ， 以及设置于真 空室 20内的加热组件 30。
在本实施例中， 加热组件 30位于真空室 20底部， 室门 22位于 真空室 20的顶部， 排气孔 21开设在真空室 20的侧壁上。 当需要对 基板上的光刻胶进行干燥时， 将涂覆有光刻胶的基板经室门 22放入 真空室 20后， 通过抽真空装置将真空室抽成真空， 使真空室内的真 空度优选地介于 500Pa~26Pa之间； 通过加热组件 30对光刻胶进行 加热， 加热温度优选地介于 30°C ~ 90°C之间， 使得加热和真空干燥 同时作用在光刻胶上， 以减少光刻胶表面硬化膜的产生， 同吋抽真空 装置通过排气孔 21将从光刻胶中挥发出的溶剂抽出真空室 20， 如此 设置， 在对基板上光刻胶加热的同时， 也将从光刻胶中挥发出的溶剂 抽出真空室 20， 可以快速的去除光刻胶中溶剂， 减少光刻胶中溶剂 残留量， 增加了光刻胶的坡度角。 由于光刻胶的坡度角越大， 即表明 光刻胶上、下表面的边缘轮廓越相近， 因此增大了的光刻胶坡度角可 实现光刻精度的提高。
值得一提的是， 上述加热组件 30也可以设置于真空室 20 的侧 壁或顶壁上， 室门 22也可以设置于真空室 20的侧壁上； 排气孔的数 量在此不做限定， 可以是一个， 也可以是多个， 可以开设在真空室 20的侧壁， 和 /或， 顶壁上。
优选地， 上述加热组件为微波加热组件、 红外加热组件或电阻 加热组件。
继续参见图 2， 为了便于打开或关闭真空室 20的室门 22， 优选 地， 真空干燥装置还包括： 与室门 22固定连接的丝杠 40， 以及与丝 杠 40传动连接的电机 41， 丝杠 40在电机 41的驱动下带动室门 22， 使室门 22打开或闭合。
本发明同时还提供了一种真空干燥方法， 采用上述实施例提供 的真空干燥装置对光刻胶进行真空干燥， 具体地， 一种优选实施方式 中， 请参阅图 3， 为本发明实施例提供的真空干燥方法的流程图； 本 发明实施例提供的用于去除光刻胶中的溶剂的真空干燥方法包括： 步骤 10， 将涂覆有光刻胶的基板放入真空室；
步骤 1 1， 将真空室抽成真空， 同时对光刻胶进行加热。 在该步 骤 1 1中优选的是将真空室的真空度控制在 500Pa~26Pa， 而且优选的 加热温度为 30°C ~90°C。
本实施例提供的真空干燥方法中， 真空干燥是在加热的条件下 进行的， 通过上述技术方案中所提供的任一种真空干燥装置， 使涂覆 有光刻胶的基板在真空度为 500Pa~26Pa， 加热温度为 30°C~90°C的 真空室内进行真空干燥， 加热利于光刻胶中溶剂挥发， 并且通过真空 干燥作用将从光刻胶中挥发的溶剂抽出真空室。因加热和真空干燥同 时作用在光刻胶上， 可以减少光刻胶表面硬化膜的产生， 便于光刻胶 中溶剂挥发， 从而减少光刻胶中溶剂残留量， 增加了光刻胶坡度角， 进而提高了光刻精度。需要说明的是， 上述真空度的设定可以根据工 艺需要来设定， 具体为本领域技术人员所熟知， 这里不再赘述了。
请参阅图 4， 示出了加热温度介于 30°C~9(TC的情况下进行真空 干燥后的光刻胶的坡度角形貌图； 其中， 光刻胶 2位于基板 1上， 在 采用介于 30°C~9(TC的加热温度对光刻胶进行真空干燥后， 光刻胶的 坡度角 b为 50° ~60° ， 与现有技术中采用常温真空干燥， 干燥后光 刻胶的坡度角 a为 20° ~30° 相比， 因干燥后光刻胶中溶剂残留量明 显减少， 明显增加了了光刻胶的坡度角，从而提高了光刻精度。此外， 采用本实施例提供的真空干燥方法，因干燥后光刻胶中溶剂残留量很 少， 从而可以改善光刻胶的粘附性； 同时， 因干燥后光刻胶中溶剂残 留量很少， 使得干燥后光刻胶中的溶剂所吸收的曝光量减少， 从而可 以减少曝光工序中所需的曝光量。
加热温度可以根据光刻胶的不同组成成分和工艺需要进行选 择， 不同组成的光刻胶， 加热温度也不同； 优选地， 当光刻胶中感光 树脂为聚丙烯树脂时， 较佳的加热温度为 70°C~90°C， 具体加热温度 可以为 70°C、 75°C、 80。C、 85°C和 90°C; 当光刻胶中感光树脂为酚 醛树脂时， 较佳的加热温度为 30°C~4(TC， 具体加热温度可以为 30 V、 35°C、 40°C。 例如， 继续参阅图 4， 采用加热温度为 70°C对感光 树脂为聚丙烯树脂的光刻胶进行加热时，光刻胶中的溶剂在真空和加 热的同时作用下， 可以快速地挥发出， 光刻胶的坡度角 b可达到 50° ~60° ， 相对于背景技术中所提的光刻胶坡度角为 20° ~30° 而言， 明显增加了光刻胶的坡度角， 即光刻胶上、 下表面的边缘轮廓相近， 进而提高了光刻精度。
需要说明的是， 光刻胶一般包括： 感光树脂、 增感剂和溶剂， 感光树脂经过光照后， 在曝光区域发生固化反应， 使感光树脂的溶解 性和亲和性发生变化。
请参阅图 5， 示出了本发明具体实施例提供的光刻工艺流程图。 在基板上涂覆光刻胶之前， 光刻工艺还包括： 对基板进行清洗 12和 脱水干燥 13工序， 以便于后续涂覆光刻胶； 在对光刻胶进行真空干 燥后， 光刻工艺还包括： 预烘 14、 曝光 15、 显影 16以及后烘 17工 序， 以便在基板上形成所需的光刻胶图案。
综上所述， 在本发明提供的真空干燥装置中， 真空干燥是在加 热的条件下进行的， 使真空室内的真空度介于 500Pa~26Pa之间、 加 热温度介于 30°C ~9(TC之间， 使得加热和真空干燥同时作用在光刻胶 上， 以减少光刻胶表面硬化膜的产生， 便于光刻胶中溶剂挥发， 从而 减少光刻胶中溶剂残留量， 增加了光刻胶坡度角， 进而提高了光刻精 度。
此外， 采用本发明提供的真空干燥装置对涂覆在基板上的光刻 胶进行干燥时， 因干燥后光刻胶中溶剂残留量很少， 从而可以改善光 刻胶的粘附性； 而且， 因干燥后光刻胶中溶剂残留量很少， 使得干燥 后光刻胶中溶剂所吸收的曝光量减少，从而减少曝光工序中所需的曝 显然， 本领域的技术人员可以对本发明进行各种改动和变型而 不脱离本发明的精神和范围。这样， 倘若本发明的这些修改和变型属 于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这 些改动和变型在内。

Claims

权利要求
1. 一种用于去除光刻胶中的溶剂的真空干燥装置， 包括： 具有 排气孔和室门的真空室， 以及与所述排气孔连通的抽真空装置， 所述 真空干燥装置的特征在于， 在所述真空室内设置加热组件。
2. 如权利要求 1所述的真空干燥装置， 其特征在于， 所述加热 组件位于所述真空室底部， 所述室门位于所述真空室的顶部， 所述排 气孔开设在所述真空室的侧壁上。
3. 如权利要求 1所述的真空干燥装置， 其特征在于， 所述加热 组件为微波加热组件、 红外加热组件或电阻加热组件。
4. 如权利要求 1至 3任一所述的真空干燥装置， 其特征在于， 还包括： 与所述室门固定连接的丝杠， 以及与所述丝杠传动连接的电 机， 所述丝杠在所述电机的驱动下带动所述室门， 使所述室门打开或 闭合。
5. 如权利要求 1所述的真空干燥装置， 其中， 所述真空室的真 空度为 500Pa~26Pa。
6. 如权利要求 1所述的真空干燥装置， 其中， 所述加热组件的 加热温度为 30°C ~90°C。
7. 一种用于去除光刻胶中的溶剂的真空干燥方法， 包括步骤： 将涂覆有光刻胶的基板放入真空室； 以及
将真空室抽成真空，
所述真空干燥方法的特征在于， 在将真空室抽成真空的同时对 光刻胶进行加热。
8. 如权利要求 7所述的真空干燥方法， 其中将真空室的真空度 控制在 500Pa~26Pa。
9. 如权利要求 7所述的真空干燥方法， 其中对光刻胶的加热温 度为 30 °C ~90 °C。
10. 如权利要求 9 所述的真空干燥方法， 其特征在于， 当所述 光刻胶中感光树脂为聚丙烯树脂时， 所述加热温度为 70°C ~9(TC。
1 1. 如权利要求 9 所述的真空干燥方法， 其特征在于， 当所述 光刻胶中感光树脂为酚醛树脂时， 所述加热温度为 30°C ~4(TC。
12. 一种光刻方法， 包括：
在基板上涂覆光刻胶；
采用如权利要求 7至 1 1任一所述的真空干燥方法来去除光刻胶 中的溶剂； 以及
对去除了溶剂的光刻胶执行预烘、 曝光、 显影和后烘工序。
13. 如权利要求 12所述的光刻方法， 其特征在于， 在基板上涂 覆光刻胶之前， 还包括： 对基板进行清洗和脱水干燥工序。
PCT/CN2013/083907 2013-06-20 2013-09-22 真空干燥装置、真空干燥方法以及光刻方法 Ceased WO2014201777A1 (zh)

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