WO2014198082A1 - 一种检测刻蚀残留的方法 - Google Patents
一种检测刻蚀残留的方法 Download PDFInfo
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- WO2014198082A1 WO2014198082A1 PCT/CN2013/081147 CN2013081147W WO2014198082A1 WO 2014198082 A1 WO2014198082 A1 WO 2014198082A1 CN 2013081147 W CN2013081147 W CN 2013081147W WO 2014198082 A1 WO2014198082 A1 WO 2014198082A1
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- fourier transform
- infrared spectrum
- infrared
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title abstract description 17
- 238000002329 infrared spectrum Methods 0.000 claims abstract description 42
- 238000012360 testing method Methods 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims description 34
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 238000004566 IR spectroscopy Methods 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 5
- 230000004075 alteration Effects 0.000 claims description 4
- 210000001747 pupil Anatomy 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 25
- 239000000463 material Substances 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 76
- 229910021417 amorphous silicon Inorganic materials 0.000 description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 239000011241 protective layer Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 125000000524 functional group Chemical group 0.000 description 7
- 238000000059 patterning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000036541 health Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N2021/3595—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using FTIR
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95692—Patterns showing hole parts, e.g. honeycomb filtering structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
Definitions
- the present invention relates to the field of display technologies, and in particular, to a method for detecting an etch residue.
- the patterning process is an indispensable step in the preparation of the array substrate and the counter substrate.
- the general patterning process includes photoresist coating, exposure, development, and etching. If the etching uniformity is not in the etching process. It is often caused by the problem of etch residue; wherein the etch residue means that after the patterning process is finished, the film layer that needs to be completely removed is not completely removed, that is, there is still some residue.
- the forming process may include: sequentially forming a gate., a gate insulating layer, an active layer, a source and a drain, and a protective layer and a pixel electrode on the substrate, wherein the active The layer may include an amorphous silicon layer and an n+ amorphous silicon layer, and the pixel electrode is connected to the drain through a via provided on the protective layer.
- the n+ amorphous silicon layer when the n+ amorphous silicon layer is etched, the n+ amorphous silicon corresponding to the gap between the source and the drain needs to be completely etched away, but the 11+ amorphous portion often occurs after the etching process. Incomplete silicon etching, which will result in a change in the structure of the finally prepared array substrate, resulting in defective products.
- the protective layer material such as silicon nitride at the via hole also needs to be completely etched away, but the via etching is often incomplete after the etching process. Phenomenon, which causes the via to be unable to connect the pixel electrode and the drain, resulting in no
- Embodiments of the present invention provide a method for detecting etch residue, which can detect etch residue and thereby improve product yield.
- a method for detecting an etch residue including:
- determining, according to the infrared spectrum, whether the residual substance exists includes:
- Determining whether there is a characteristic peak of a functional group or a chemical bond characterizing the residual substance if the characteristic peak is present, the residual substance exists at the to-be-detected portion; if the characteristic peak is not present, the to-be-detected portion is not The residual substance is present.
- performing the infrared spectroscopy test on the pattern to be detected includes: performing infrared spectroscopy on the pattern to be detected by using a Fourier transform infrared spectrometer.
- the method further includes setting The pupil corresponding to the pattern to be detected is defined at the position to be detected by the incident light of the Fourier transform infrared spectrometer.
- the shape of the light transmitting portion of the diaphragm is the same as the shape of the pattern to be detected, and the area of the light transmitting portion of the light is less than or equal to the area of the pattern to be detected.
- the light is disposed in the Fourier transform infrared spectrometer or on the light exit side of the Fourier transform infrared spectrometer.
- the infrared spectrum test of the pattern to be detected by the Fourier transform infrared spectrometer includes: using Fourier transform infrared The reflection mode of the spectrometer performs an infrared spectroscopy test on the pattern to be detected.
- An embodiment of the present invention provides a method for detecting an etch residue, the method comprising: acquiring a pattern to be detected; performing an infrared spectrum test on the pattern to be detected to obtain an infrared spectrum; Determining whether there is a residual substance; thus, by judging whether the characteristic peak of the functional group or the chemical bond characterizing the residual substance is included in the infrared spectrum, it can be determined whether the residual substance exists, thereby realizing the detection of the etching residue. Purpose, and thus improve product yield.
- the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and those skilled in the art can obtain other figures according to these drawings without any creative work.
- FIG. 1 is a schematic flow chart of detecting etch residue according to an embodiment of the present invention
- FIG. 2 is a schematic structural view of residual silicon nitride at a via hole on a protective layer of an array substrate according to an embodiment of the present invention
- FIG. 3 is a schematic structural diagram of residual n+ amorphous silicon on an active layer corresponding to a gap between a source and a drain of an array substrate according to an embodiment of the present invention
- FIG. 4 is a top plan view of an array substrate thin film transistor in a pattern corresponding to the gap between the source and the drain without the 11+ amorphous silicon remaining according to the first embodiment of the present invention
- 4b is a schematic top plan view of an n + amorphous silicon residual H-inch array substrate thin film transistor in a pattern corresponding to the gap between the source and the drain according to the first embodiment of the present invention
- FIG. 5 is a top plan view showing the absence of 11 + amorphous silicon at a pattern corresponding to the gap between the source and the drain according to the first embodiment of the present invention
- FIG. 5b is a top plan view showing n+ amorphous silicon residual H in a pattern corresponding to a gap between the source and the drain according to Embodiment 1 of the present invention.
- FIG. 6 is a schematic view of a diaphragm including a U-shaped transparent portion according to Embodiment 1 of the present invention.
- FIG. 7 is a schematic diagram of infrared spectrum testing performed by a Fourier transform infrared spectrometer comprising an aperture of a U-shaped transparent portion according to Embodiment 1 of the present invention
- FIG. 8a is a top plan view showing the absence of silicon nitride remaining in the pattern under the via hole provided by the second embodiment of the present invention.
- FIG. 8b is a top plan view showing the residual silicon nitride in the pattern under the via hole provided by the second embodiment of the present invention.
- FIG. 9 is a schematic view of a diaphragm including a 0-shaped light transmitting portion according to Embodiment 2 of the present invention.
- FIG. 10 is a diagram showing the use of a diaphragm including a 0-type light transmitting portion according to Embodiment 2 of the present invention.
- FIG. A schematic diagram of the infrared spectrum test performed by a Fourier transform infrared spectrometer.
- An embodiment of the present invention provides a method for detecting an etch residue. As shown in FIG. 1, the method includes the following steps:
- S 10 acquires a pattern to be detected.
- the step may be: using a film color difference to fit a boundary of the pattern to be detected, and positioning the pattern to be detected to obtain a pattern to be detected.
- fitting refers to the use of a thin layer color layer method to identify the pattern of the position to be detected in order to form a photopole
- the to-be-detected portion referred to in all the embodiments of the present invention may be a residual material that should be etched away after being etched, and the etching residue is as shown in FIG. 2, and the bottom gate array may be fabricated.
- the protective layer material such as silicon nitride remains 601a; or, for example, as shown in FIG.
- 11+ amorphous silicon remains 402a and the like on the active layer 40 corresponding to the gap between the source and the drain, wherein the active layer 40
- An amorphous silicon layer 401 and an 11+ amorphous silicon layer 402 are included.
- the bottom gate type array substrate described in the following figures includes, in order from bottom to top, a substrate 10, a gate electrode 20 disposed on the substrate, a gate insulating layer 30, A semiconductor active layer 40, a source/drain metal layer including a source 501 and a drain 502, and a protective layer.
- the active layer 40 includes an amorphous silicon layer 401 and an 11+ amorphous silicon layer 402;
- the gate electrode 20, the gate insulating layer 30, the semiconductor active layer 40, the source electrode 501, and the drain electrode 502 constitute a thin film transistor of the array substrate. For the pixel electrode, it is not shown in the drawing.
- obtaining the pattern to be detected may be, for example, acquiring a pattern under the via hole; or acquiring a pattern below the gap between the source and the drain.
- S102 Perform infrared spectrum test on the pattern to be detected to obtain an infrared spectrum.
- the step may specifically be: performing infrared spectrum test on the pattern to be detected by using a Fourier transform infrared spectrometer to obtain an infrared spectrum.
- the Fourier Transform Infrared Spectrometer is an instrument that analyzes the molecular structure and chemical composition of a substance by utilizing the absorption characteristics of the substance for different wavelengths of infrared radiation.
- the principle is: When the substance is irradiated by infrared light whose frequency is continuously changed, the molecules constituting the substance absorb the radiation of certain frequencies, and the dipole moment is changed by the vibrational motion or the rotational motion, and the molecular vibration and the rotational energy level are generated. From the ground state to the excited state transition, the molecular absorption spectrum formed thereby is called infrared light #.
- the method further comprises: moving away from the setting and the pattern to be detected Corresponding apertures, the incident light of the Fourier transform infrared spectrometer is limited to the location to be detected.
- the light transmitting portion of the diaphragm The shape is the same as the shape of the pattern to be detected, and the area is less than or equal to the area of the pattern to be detected. Preferably, for the area, the area of the light transmitting portion of the diaphragm is slightly smaller than the area of the pattern to be detected.
- the position of the light transmitting portion of the diaphragm must correspond exactly to the pattern to be detected.
- the aperture may be included in the Fourier's Infrared Spectrometer, or may be separately provided, which is not limited herein.
- the array substrate includes a gate metal layer, and the source and drain gold a genus layer, and the metal layer is opaque, therefore, optionally, in the case where a gate metal layer and a drain metal are disposed directly under the portion to be detected, a Fourier transform red ray spectrometer may be employed.
- the reflection mode performs an infrared spectroscopy test on the pattern to be detected.
- the principle of the infrared spectrum is obtained.
- the incident light of the Fourier transform infrared spectrometer is irradiated to the pattern corresponding to the gap between the source 501 and the drain 502
- the infrared light passes through the possibly residual film layer where n + amorphous silicon residue 402a, and then wears After passing through the amorphous silicon layer 401, it reaches the underlying metal layer of the gate electrode 20, and the light is reflected by the metal layer.
- each film layer absorbs some specific frequency of infrared light, and the Fourier transform infrared spectrometer collects and detects the reflected light. The signal is converted to the corresponding infrared spectrum.
- the infrared spectrum is obtained by using a Fourier transform infrared spectrometer to determine whether there is etch residue, mainly utilizing the characteristic characteristics of the infrared spectrum, that is, the infrared spectrum is being A characteristic peak appears at the wavelength or wavenumber position of the absorbed light.
- each characteristic peak on the infrared spectrum represents a specific vibrational form of a certain functional group or chemical bond, and each characteristic peak corresponds to a specific wavelength or wave number in the infrared spectrum.
- the step may be: determining, according to the infrared spectrum, a characteristic peak at a spectral wave number corresponding to a functional group or a chemical bond of the residual substance; if the characteristic peak is present, the portion to be detected exists Residual substance; if the characteristic peak is not present, the residual substance is not present at the place to be detected.
- An embodiment of the present invention provides a method for detecting an etch residue, the method comprising: acquiring a pattern to be detected; performing an infrared spectrum test on the pattern to be detected to obtain an infrared spectrum; Determining whether there is a residual substance; thus, by judging whether the characteristic peak of the functional group or the chemical bond characterizing the residual substance in the etching residue is included in the infrared spectrum, it can be determined whether the residual substance exists, thereby realizing detection
- the purpose of etching residues is to improve product yield.
- the preparation method comprises sequentially forming a gate electrode, a gate insulating layer, an active layer, a source/drain metal layer, a protective layer, and a pixel electrode on the protective layer on the substrate, wherein
- the active layer includes an amorphous silicon layer and an 11 + amorphous silicon layer
- the source/drain metal layer includes a source and a drain
- the protective layer includes a via
- the pixel electrode is formed on the protective layer
- the via is electrically connected to the drain; the gate, the gate insulating layer, the active layer, the source and the drain constitute a thin film transistor of the array substrate.
- the detecting etch residue includes the following steps:
- the source 501 and the drain 502 are The pattern corresponding to the gap is as shown in FIG. 5a, and only a partial pattern of the active layer is included, that is, a partial pattern including the amorphous silicon layer 401 and the n+ amorphous silicon layer 402.
- FIG. 4b when there is 11+ amorphous silicon residue 402a in the pattern corresponding to the gap between the source 501 and the drain 502, the gap between the source 501 and the drain 502 is The corresponding pattern is shown in Fig. 5b, and includes not only a partial pattern of the active layer but also n+ amorphous silicon residue 402a.
- FIG. 5b is a plan view, only a partial pattern of the n+ amorphous silicon layer 402 of the active layer can be seen in FIG. 5b for a partial pattern of the active layer.
- n+ amorphous silicon layer 402 of the active layer is also at the source 501 and the drain 502 on the pattern corresponding to the gap between the source 501 and the drain 502 even when there is no n+ amorphous silicon residue 402a.
- the lower boundary of the opposite boundary includes an ⁇ + amorphous silicon layer 402 pattern of about 0,4 ⁇ m width, so that the portion of the ⁇ + amorphous silicon layer 402 pattern needs to be excluded during actual testing.
- a diaphragm including a light transmitting portion corresponding to the shape of the pattern is disposed, and the incident light of the Fourier transform infrared spectrometer is limited to The pattern is at the place.
- a diaphragm 100 including a light-transmitting portion corresponding to the shape of the pattern is disposed, wherein
- 3 ⁇ 4 100 is as shown in FIG. 6, and its area may be slightly smaller than the pattern corresponding to the gap between the source 501 and the drain 502 as shown in FIG. 5a or 5b.
- n+4 amorphous silicon layer 402 having a width of about 0,4 ⁇ is subtracted, that is, the area is slightly smaller than 401 as shown in Fig. 5a, or at 402a as shown in Fig. 5b.
- the Fourier transform infrared spectrometer 200 including the light of the U-shaped transparent portion 100a and 100 may be used to make the Fourier transform
- the incident light of the infrared spectrometer is entirely irradiated at a pattern corresponding to the gap between the source 501 and the drain 502.
- the active layer is under the gate 20 and the gate 20 is made of metal, the metal can reflect light. Therefore, the reflection mode of the Fourier transform infrared spectrometer is used here to match the source.
- the pattern corresponding to the gap between 501 and the drain 502 is subjected to infrared spectroscopy to obtain an infrared spectrum including information on various functional groups or chemical bonds.
- the pattern of each layer of the array substrate in Fig. 7 is a cross-sectional view taken along line A-A of Fig. 4b, and the inclusion of the 11+ amorphous silicon residue 402a in Fig. 7 is merely illustrative here.
- the number of P- H may be in the spectral wave corresponding to health, i.e. wavenumber 2265 2455cm 'Pf ⁇ near or between 1 determines whether characteristic peaks. If there is no characteristic peak, it can be concluded that there is no ⁇ amorphous silicon residue in the pattern corresponding to the gap between the source 501 and the drain 502; if there is a characteristic peak, the source can be obtained ⁇ + amorphous silicon remains at the pattern corresponding to the gap between 501 and drain 502.
- 11+ amorphous can be measured according to the intensity and peak area of the characteristic peak corresponding to P-H The residual amount of silicon.
- the protective layer for example, the material is silicon nitride
- the method for detecting the etching residue includes the following steps:
- the pattern under the via 601 is a partial pattern of the drain 502 of the source/drain metal layer.
- the pattern under the via 601 is a pattern of silicon nitride residual 601a.
- the silicon nitride remains 60 ia at the via 601 since the etched silicon nitride remains, the thickness thereof is relatively small; therefore, the source and drain metal layers can also pass through the protection.
- the film chromatic aberration between the layers fits the boundaries of the vias.
- the incident light of the Fourier transform infrared spectrometer is defined under the via 601 At the pattern.
- a light 100 including a light transmitting portion corresponding to the shape of the via 601 is provided, wherein the aperture 100
- the shape of the 0-type light transmitting portion 100b is as shown in Fig. 9, and its area may be slightly smaller than the area of the pattern under the via hole 601 as shown in Fig. 8a or 8b.
- the via 601 is etched, the area of the surface away from the source/drain metal layer on the protective layer 60 is larger than the area of the surface close to the source/drain metal layer, and therefore, the pattern under the via 601 referred to herein is The area is the area of the via 601 near the surface of the source/drain metal layer.
- a Fourier transform infrared spectrometer 200 including an aperture 100 (not shown in FIG. 10) including a 0-type light transmitting portion 100b may be employed, such that the Fourier transform infrared spectrometer The incident light is entirely irradiated at the pattern below the via 601.
- the via 601 is below the drain 502, and the drain is made of metal, the metal can be reflective, therefore,
- the pattern under the via 601 is subjected to infrared spectroscopy using a reflection mode of a Fourier transform infrared spectrometer to obtain an infrared spectrum including various functional groups or chemical bonds.
- each layer of the array substrate in Fig. 10 is a cross-sectional view taken along line A-A of Fig. 8b, and the silicon nitride residue 601a in Fig. 10 is merely illustrative here.
- the silicon nitride comprising Si H, Si N, NH three chemically characterized may be Si H, Si ⁇ , ⁇ H spectrum corresponding to the wave number, i.e. wavenumber 2100cin 3 ⁇ 4, 840 cm, 3350cm near , to determine whether there are this series of feature peaks. If there is no such characteristic peak, it can be concluded that there is no residual silicon nitride at the via; if there are such series of characteristic peaks, it can be found that there is residual silicon nitride at the via.
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US14/349,008 US9176053B1 (en) | 2013-06-13 | 2013-08-09 | Method for detecting an etching residue |
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CN201310233393.6A CN103337465B (zh) | 2013-06-13 | 2013-06-13 | 一种检测刻蚀残留的方法 |
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CN102354665A (zh) * | 2011-09-28 | 2012-02-15 | 上海宏力半导体制造有限公司 | 内置光刻胶检测单元的退火装置、光刻胶的检测方法 |
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US20040168709A1 (en) * | 2003-02-27 | 2004-09-02 | Drumm James M. | Process control, monitoring and end point detection for semiconductor wafers processed with supercritical fluids |
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JP2001141657A (ja) * | 1999-10-29 | 2001-05-25 | Internatl Business Mach Corp <Ibm> | マクロ検査用照明装置、マクロ検査装置及び該方法 |
CN1596368A (zh) * | 2001-11-30 | 2005-03-16 | 国际商业机器公司 | 图形轮廓的检查装置和检查方法、曝光装置 |
CN102073227A (zh) * | 2009-11-25 | 2011-05-25 | 无锡华润上华半导体有限公司 | 光刻胶的去除方法 |
CN102566327A (zh) * | 2010-12-08 | 2012-07-11 | 无锡华润上华科技有限公司 | 显影均匀性调试方法 |
CN102354665A (zh) * | 2011-09-28 | 2012-02-15 | 上海宏力半导体制造有限公司 | 内置光刻胶检测单元的退火装置、光刻胶的检测方法 |
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US9176053B1 (en) | 2015-11-03 |
US20150300950A1 (en) | 2015-10-22 |
CN103337465A (zh) | 2013-10-02 |
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