WO2014194653A1 - Cavité chauffante et dispositif de traitement de semi-conducteur - Google Patents

Cavité chauffante et dispositif de traitement de semi-conducteur Download PDF

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Publication number
WO2014194653A1
WO2014194653A1 PCT/CN2013/090223 CN2013090223W WO2014194653A1 WO 2014194653 A1 WO2014194653 A1 WO 2014194653A1 CN 2013090223 W CN2013090223 W CN 2013090223W WO 2014194653 A1 WO2014194653 A1 WO 2014194653A1
Authority
WO
WIPO (PCT)
Prior art keywords
heating chamber
lifting unit
workpiece
ejector
processed
Prior art date
Application number
PCT/CN2013/090223
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English (en)
Chinese (zh)
Inventor
武学伟
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Publication of WO2014194653A1 publication Critical patent/WO2014194653A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention relates to the field of microelectronic processing technology, and in particular to a heating chamber and a semiconductor processing apparatus. Background technique
  • PVD Physical Vapor Deposition
  • the copper interconnect layer mainly includes steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition, wherein the degassing step is to remove water vapor and other volatile impurities on the workpiece to be processed such as a substrate.
  • the degassing step it is not only necessary to rapidly heat the substrate to about 350 ° C, but also to ensure that the substrate is heated uniformly, otherwise the volatile impurities generated in a part of the substrate may be removed uncleanly, thereby giving a follow-up
  • the process has an adverse effect, and the severe substrate temperature unevenness may even cause the substrate to chip.
  • FIG. 1 is a schematic structural view of a conventional PVD device.
  • the PVD device includes a degassing chamber 1 having a circular inner peripheral wall, and a plurality of supporting pins 2 (usually three) are fixed in the degassing chamber 1 for carrying the substrate 3, and A film opening la is provided on the inner peripheral wall of the degassing chamber 1, and a gate valve (not shown) for opening or closing the film opening la, when the substrate 3 is loaded and unloaded, the robot is to be processed via the film opening la
  • the processed substrate is transferred to the top end of the support pin 2 in the degassing chamber 1, and the processed substrate is removed from the tip end of the support pin 2 out of the air chamber 1.
  • an upper body cover 5 is provided at the top of the degassing chamber 1, and a quartz window 7 is provided between the inner space of the upper body cover 5 and the degassing chamber 1, the quartz window 7 of which will be the upper body cover 5
  • the inner space and the degassing chamber 1 are separated into two separate closed spaces, and in the process, the inner space of the upper body cover 5 is an atmospheric environment, and the degassing chamber 1 is a vacuum environment.
  • a plurality of heating bulbs 6 are disposed in the upper body cover 5 to heat the substrate 3 placed at the top end of the supporting pins 2 by radiation.
  • the above PVD equipment inevitably has the following problems in practical applications, namely:
  • the inner peripheral wall of the air chamber 1 is provided with a film opening la, which destroys the symmetry of the circular inner peripheral wall of the degassing chamber 1, so that the inner peripheral wall cannot uniformly reflect the heat radiated by the heating bulb 6, thereby
  • the temperature distribution in the degassing chamber 1 is uneven; moreover, since most of the heat radiated from the bulb 6 to the film opening la is hard to be reflected onto the substrate 3, this causes the substrate 3 to correspond to the film opening la
  • the heat obtained in the region differs from the heat obtained in the region corresponding to the other positions of the inner peripheral wall, thereby causing the temperature of the substrate 3 to be uneven, thereby reducing the uniformity of the process.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a heating chamber and a semiconductor processing apparatus which can uniformly heat a workpiece to be processed, thereby improving the temperature uniformity of the workpiece to be processed, and further Can improve the uniformity of the process.
  • a heating chamber having a heating unit disposed at a top thereof for radiating heat toward the interior of the heating chamber by means of heat radiation; on an inner peripheral wall of the heating chamber A film opening is provided for moving the workpiece to and from the heating chamber.
  • the heating chamber further includes a carrying device, the carrying device includes a lifting unit and a ejector device, wherein: the ejector device is located in the heating chamber, the top end thereof is used to support the workpiece to be processed;
  • the thimble device is fixedly connected to drive the thimble device to rise or fall to drive the top end of the thimble device to rise from the loading and unloading area to the process area, or to descend from the process area to the loading and unloading area, where the lower edge of the process area is located Above the upper edge of the flap, the upper edge of the loading area corresponds to the upper edge of the flap.
  • the lifting unit includes a transmission assembly and a rotary drive source, wherein: the rotary drive source is configured to provide rotational power to the transmission assembly; the transmission assembly is configured to convert rotational power provided by the rotary drive source into The lifting moves linearly and is transmitted to the thimble device to raise or lower the thimble device.
  • the transmission assembly comprises a lead screw assembly or a rack and pinion assembly.
  • the lifting unit includes: a linear driving source for driving the ejector device to rise Or drop.
  • the linear driving source comprises a linear gas rainbow, a linear motor or a linear hydraulic cylinder.
  • the thimble device includes: a ring bracket and at least three thimbles, wherein: the at least three thimbles are used to support a workpiece to be processed; the annular bracket is horizontally disposed in the heating chamber, and is located in the Below at least three thimbles, and the at least three thimbles are uniformly distributed along the circumference of the annular support, and the bottom ends of the at least three thimbles are fixed on the annular support; the annular support and the lifting unit Connecting, driven by the lifting unit, the annular bracket drives the at least three thimbles to rise or fall simultaneously.
  • a through hole is disposed in a bottom wall of the heating chamber, and the lifting unit includes a connecting rod, wherein: a top end of the connecting rod is fixedly connected with the ejector device, and a bottom end of the connecting rod Through the through hole and extending to the outside of the heating chamber, and fixedly connected to the transmission assembly.
  • the bellows is sleeved with a bellows, the top end of the bellows is sealingly connected with the bottom wall of the heating chamber, and the bottom end of the bellows is sealingly connected with the connecting rod to The inside of the bellows forms a sealed space that communicates with the through hole.
  • the height of the heating chamber in the vertical direction is 155 ⁇ 165 mm.
  • the lifting unit further comprises a support frame fixed to an outer side of the bottom wall of the heating chamber for respectively supporting the transmission component and the rotary driving source.
  • the present invention also provides a semiconductor processing apparatus including a heating chamber and a robot, wherein the heating chamber employs the above-described heating chamber provided by the present invention.
  • the heating chamber provided by the present invention can raise the workpiece to be processed on the thimble device to a predetermined process above the film opening by raising or lowering the ejector device for supporting the workpiece to be processed by the lifting unit.
  • the zone performs the process, or descends to a preset loading area corresponding to the transfer port for unloading. Since the inner peripheral wall of the heating chamber corresponding to the process zone is not provided with an opening such as a film opening, but is a closed cylindrical structure, it can uniformly reflect the heat radiated by the heating unit.
  • the transfer port of the loading area can be prevented from adversely affecting the temperature of the workpiece to be processed, so that the temperature of the workpiece to be processed is uniform, thereby improving the uniformity of the process. Further, by lowering the workpiece to be processed to the above-described loading and unloading area, loading and unloading of the workpiece to be processed can be achieved.
  • the semiconductor processing apparatus provided by the present invention can uniformly heat the workpiece to be processed by using the above-described heating chamber provided by the present invention, thereby improving the temperature uniformity of the workpiece to be processed, thereby improving the uniformity of the process.
  • FIG. 1 is a schematic structural view of a conventional PVD device
  • FIG. 2A is a cross-sectional view of a heating chamber according to an embodiment of the present invention when a workpiece to be processed is in a loading and unloading area;
  • 2B is a cross-sectional view of the heating chamber according to an embodiment of the present invention when the workpiece to be processed is in the process area;
  • FIG 3 is a top plan view of an annular bracket applied to a heating chamber provided by an embodiment of the present invention. detailed description
  • 2A is a cross-sectional view of a heating chamber provided with a workpiece in a loading and unloading area according to an embodiment of the present invention.
  • 2B is a cross-sectional view of the heating chamber according to an embodiment of the present invention when the workpiece to be processed is in the process area.
  • 3 is a top plan view of an annular bracket applied to a heating chamber provided by an embodiment of the present invention. Referring to FIG. 2A, FIG. 2B and FIG.
  • a heating unit is disposed at the top of the heating chamber 20, and the heating unit includes an upper body cover 22 disposed at the top of the heating chamber 20, and is located above a heat lamp 23 in the body cover 22, wherein the inner space 221 and the heating chamber of the upper body cover 22
  • a quartz window 39 is disposed between the two, and the quartz window 39 separates the inner space 221 of the upper body cover 22 from the heating chamber 20 into two independent closed spaces; and in the process, the inner space 221 of the upper body cover 22 is atmospheric.
  • the environment, while the heating chamber 20 is a vacuum environment.
  • the heat lamp 23 is used to radiate heat toward the inside of the heating chamber 20 by means of heat radiation.
  • the heat lamp 23 may be an infrared heat lamp such as a tungsten wire or a quartz, and the heat lamp 23 may be configured as a bulb or a tube of any shape. .
  • a film opening 201 is provided in the inner peripheral wall of the heating chamber 20 for moving the workpiece 21 into or out of the heating chamber 20.
  • the process area I the area above the upper edge of the film opening 201
  • the loading area ⁇ the area below the upper edge of the film opening 201
  • the upper edge of the loading area II corresponds to the transfer The upper edge of the opening 201.
  • the heating chamber 20 further includes a carrying device including a lifting unit and a thimble device, wherein the thimble device is located in the heating chamber 20, the top end of which is used to support the workpiece 21 to be processed; and the lifting unit is used to drive the ejector device to rise Or descending to drive the top end of the thimble device from the loading area II to the process area I, or from the process area I to the loading area II.
  • the workpiece 21 placed on the thimble device can be lifted to the process zone I located above the film opening 201 by the lifting unit to perform the process, or can be lowered to the loading area corresponding to the film opening 201. Loading and unloading.
  • the ejector device includes three thimbles 24 and a ring bracket 25, wherein the three thimbles 24 are used to support the workpiece 21 to be processed. It is easy to understand that the top ends of the three thimbles 24 need to be flush with each other so that the workpiece 21 can be processed. It is placed horizontally and stably.
  • the annular bracket 25 is horizontally disposed in the heating chamber 20 and located under the three thimbles 24, and the three thimbles 24 are uniformly distributed along the circumferential direction of the annular bracket 25, and the bottom end thereof is fixed on the annular bracket 25, as shown in FIG. Show.
  • the lifting unit includes a transmission assembly 29 and a rotary drive source 30, wherein the rotary drive source 30 is configured to provide rotational power to the transmission assembly 29, and the rotary drive source 30 can be a rotary electric machine or a rotary hydraulic motion and transmitted to the thimble device to The thimble device is raised or lowered, and the transmission assembly 29 can A component capable of converting rotational power into a lifting linear motion such as a screw nut assembly or a rack and pinion assembly is employed.
  • the transmission assembly 29 and the thimble device are connected by the following connection.
  • the lifting unit further includes a link 26 and a support frame 28, wherein the support frame 28 is fixed to the outside of the bottom wall of the heating chamber 20 for supporting the transmission assembly 29 and the rotary drive source 30, respectively.
  • a through hole 202 is provided in the bottom wall of the heating chamber 20, and the top end of the connecting rod 26 is fixedly coupled to the annular bracket 25, and the bottom end of the connecting rod 26 passes through the through hole 202 and extends to the heating chamber 20 The exterior is fixedly coupled to the transmission assembly 29.
  • the drive assembly 29 converts the rotational power provided by the rotary drive source 30 into a lifting linear motion, and in turn drives the link 26, the annular bracket 25 and the three ejector pins 24 to simultaneously raise or lower, thereby enabling the drive
  • the workpiece 21 placed on the three thimbles 24 is raised to the process zone I above the film opening 201, as shown in Fig. 2B, to the position where the workpiece 21 is machined; or lowered to the loading area corresponding to the film opening 201, such as The position of the workpiece 21 to be processed shown in Fig. 2A.
  • a bellows 27 is sleeved on the connecting rod 26, and the top end of the bellows 27 is sealingly connected with the bottom wall of the heating chamber 20, and the bottom end of the bellows 27 is sealingly connected with the lower portion of the connecting rod 26 to
  • the inside of the tube 27 forms a sealed space in communication with the through hole 202, so that the heating chamber 20 can maintain a vacuum state upon heating.
  • the inner peripheral wall of the heating chamber 20 corresponding to the above-described process zone I is not provided with an opening such as the film opening 201, it is a closed cylindrical structure which can uniformly reflect the radiation radiated by the heat lamp 23 when heated.
  • heat By heat, by raising the workpiece 21 to the process zone I during the process, it is possible to prevent the film opening 201 from adversely affecting the temperature of the workpiece 21 to be processed, and to make the temperature of the workpiece 21 to be uniform, thereby improving the process. Uniformity. Further, by lowering the workpiece 21 to the above-mentioned loading and unloading area ⁇ , attachment and detachment of the workpiece 21 can be realized.
  • the above process area I determines the vertical spacing between the workpiece 21 to be processed and the heating lamp 23, and the vertical spacing determines the heating rate of the workpiece 21 to be processed, and therefore, in practical applications, according to different processes Process area for different requirements of the heating rate of the workpiece 21 to be processed I make the corresponding settings.
  • the height of the heating chamber 20 in the vertical direction needs to satisfy the following conditions: that the process area I can be located at the transfer port under the premise that the process area I satisfies the requirement of the process for the temperature increase rate of the workpiece 21 to be processed.
  • the height of the heating chamber 20 in the vertical direction is 155 to 165 mm.
  • the lifting unit includes the transmission component 29 and the rotary driving source 30, but the present invention is not limited thereto. In practical applications, a linear cylinder, a linear motor, a linear hydraulic cylinder, or the like may also be used.
  • the linear drive source replaces the transmission assembly 29 and the rotary drive source 30, so that the three ejector pins 24 can be driven to rise or fall simultaneously without converting the rotational power provided by the rotary drive source 30 into a lifting linear motion.
  • the number of thimbles 24 is three, but the present invention is not limited thereto. In practical applications, the number of thimbles may be four or more, and four or more thimbles. It is evenly distributed with respect to the circumferential direction of the annular support 25.
  • annular bracket 25 adopts a ring structure in this embodiment, the present invention is not limited thereto. In practical applications, other structures may be used instead of the ring bracket, such as a plate and a strip. Other arbitrarily shaped brackets, as long as the bracket can support at least three thimbles in the heating chamber 20, and can simultaneously drive them for lifting movement without defining the structure of the bracket.
  • the embodiment further provides a semiconductor processing apparatus, including a heating chamber and a robot, wherein the heating chamber adopts the above heating chamber provided by the embodiment of the invention; the robot is used for at least three thimbles When the top end is in the loading area, the workpiece is transported into the heating chamber, and finally placed on the top end of at least three thimbles, and the workpiece to be processed is removed from the top of at least three thimbles out of the heating chamber.
  • the heating method for heating the workpiece to be processed by the above-described semiconductor processing apparatus provided by the embodiment of the present invention will be described in detail below.
  • the heating method comprises the following steps: S1, the robot carrying the workpiece to be processed is horizontally moved into the heating chamber by the film opening, and is located above the top end of the at least three thimbles; 52, the lifting unit drives at least three thimbles to rise until the top ends of the at least three thimbles lift the workpiece to be processed from the robot;
  • the lifting unit drives at least three thimbles carrying the workpiece to be processed up until the workpiece is located in the process area;
  • the heating lamp heats the workpiece to be processed to the temperature required for the process
  • the unloaded robot is moved horizontally into the heating chamber by the transfer port and below the top end of at least three thimbles;
  • the lifting unit drives at least three thimbles carrying the workpiece to be processed down until the workpiece is placed on the robot;
  • the robot can move only horizontally, that is, horizontally into the heating chamber via the transfer opening, and above or below the top end of at least three thimbles, and horizontally removed and heated via the transfer opening.
  • the chamber can be loaded and unloaded without lifting movement, which can improve the loading and unloading speed and improve the process efficiency.
  • the semiconductor processing apparatus provided in this embodiment can uniformly heat the workpiece to be processed by using the above-described heating chamber provided in the embodiment, so that the temperature uniformity of the workpiece to be processed can be improved, and the uniformity of the process can be improved.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention porte sur une cavité chauffante. Une unité de chauffage est disposée sur un sommet de la cavité chauffante, et une ouverture de transfert de pièce est disposée sur une paroi interne et est utilisée pour déplacer une pièce à travailler traitée à l'intérieur ou à l'extérieur. La cavité chauffante comprend également un appareil de support. L'appareil de support comprend une unité d'élévation et un appareil de centre. L'appareil de centre est localisé dans la cavité chauffante, et une extrémité de l'appareil de centre est utilisée pour porter la pièce à travailler traitée. L'unité d'élévation est connectée de manière fixe à l'appareil de centre, et est utilisée pour piloter l'appareil de centre pour être élevé et abaissé, afin de piloter le pic de l'appareil de centre pour s'élever depuis une région de chargement et de déchargement vers une région de traitement ou descendre depuis la région de traitement vers la région de chargement et de déchargement. Un bord inférieur de la région de traitement est localisé au-dessus d'un bord supérieur de l'ouverture de transfert de pièce, et un bord supérieur de la région de chargement et de déchargement correspond à un bord supérieur de l'ouverture de transfert de pièce. La présente invention porte également sur un dispositif de traitement de semi-conducteur. La cavité chauffante et le dispositif de traitement de semi-conducteur décrits dans la présente invention peuvent chauffer uniformément une pièce à travailler traitée, de telle sorte qu'une uniformité de température de la pièce à travailler traitée peut être améliorée, et en outre, la qualité d'un traitement peut être améliorée.
PCT/CN2013/090223 2013-06-08 2013-12-23 Cavité chauffante et dispositif de traitement de semi-conducteur WO2014194653A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310228234.7A CN104233191A (zh) 2013-06-08 2013-06-08 加热腔室及等离子体加工设备
CN201310228234.7 2013-06-08

Publications (1)

Publication Number Publication Date
WO2014194653A1 true WO2014194653A1 (fr) 2014-12-11

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CN (1) CN104233191A (fr)
TW (1) TWI510655B (fr)
WO (1) WO2014194653A1 (fr)

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CN105789013B (zh) * 2014-12-25 2017-09-19 中微半导体设备(上海)有限公司 用于晶圆切片的等离子体刻蚀装置及其装载、卸载晶圆的方法
CN105990181A (zh) * 2015-01-28 2016-10-05 北京北方微电子基地设备工艺研究中心有限责任公司 顶针机构和除气腔室
CN106548916B (zh) * 2015-09-16 2018-11-06 北京北方华创微电子装备有限公司 工艺腔室、半导体加工设备及去气和预清洗的方法
CN108010838B (zh) * 2016-10-27 2020-09-04 中微半导体设备(上海)股份有限公司 等离子体处理装置及硅片温度测量方法
CN108315694B (zh) * 2018-05-04 2023-11-10 成都国泰真空设备有限公司 一种自动化镀膜机构
CN112663026B (zh) * 2020-11-25 2022-10-21 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及加热控制方法

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CN104233191A (zh) 2014-12-24
TWI510655B (zh) 2015-12-01

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