WO2014192118A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2014192118A1
WO2014192118A1 PCT/JP2013/065064 JP2013065064W WO2014192118A1 WO 2014192118 A1 WO2014192118 A1 WO 2014192118A1 JP 2013065064 W JP2013065064 W JP 2013065064W WO 2014192118 A1 WO2014192118 A1 WO 2014192118A1
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WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor chip
inductance
current path
main
Prior art date
Application number
PCT/JP2013/065064
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French (fr)
Japanese (ja)
Inventor
酒井　康裕
周一 北村
Original Assignee
三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2013/065064 priority Critical patent/WO2014192118A1/en
Publication of WO2014192118A1 publication Critical patent/WO2014192118A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • the present invention relates to a semiconductor device used for, for example, electric railway or wind power generation.
  • Patent Document 1 discloses a first semiconductor chip formed on a first insulating substrate 104a and a second semiconductor chip formed on a second insulating substrate 104b.
  • the first main electrode (main terminal 111) is connected to the first semiconductor chip and the second semiconductor chip.
  • the second main electrode (main terminal 112) is also connected to the first semiconductor chip and the second semiconductor chip.
  • a main electrode in which a first electrode part electrically connected to the first semiconductor chip and a second electrode part electrically connected to the second semiconductor chip are connected by a connecting part may be used.
  • the impedance of the current path passing through the first electrode part and the current path passing through the second electrode part Impedance is not uniform.
  • the current values of the first semiconductor chip and the second semiconductor chip become non-uniform, and the deterioration of either the first semiconductor chip or the second semiconductor chip is accelerated. was there.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device that can make inductances of a plurality of current paths of a main electrode uniform.
  • a semiconductor device includes a first semiconductor chip, a second semiconductor chip, and a main electrode electrically connected to the first semiconductor chip and the second semiconductor chip.
  • the main electrode has a first electrode portion whose one end is electrically connected to the first semiconductor chip, a second electrode portion whose one end is electrically connected to the second semiconductor chip, and the first electrode portion.
  • a connecting portion connecting the other end of the second electrode portion and the other end of the second electrode portion, a main body portion connected to the connecting portion, and an external connecting portion connected to a portion of the main body portion on the first electrode portion side.
  • the inductance of the current path from one end of the first electrode portion to the external connection portion when the influence of the magnetic field from the main body portion is eliminated is from the one end of the second electrode portion to the external connection portion. It is characterized by being larger than the inductance of the current path up to.
  • Another semiconductor device includes a first semiconductor chip, a second semiconductor chip, and a main electrode electrically connected to the first semiconductor chip and the second semiconductor chip.
  • the main electrode has a first electrode portion whose one end is electrically connected to the first semiconductor chip, a second electrode portion whose one end is electrically connected to the second semiconductor chip, and the first electrode portion.
  • the distance from the first electrode part to the reverse current part, which is the part of the main body part above which the current flows in the direction opposite to the first electrode part, is the second part. It is longer than the distance from the electrode part to the main body part above the second electrode part.
  • Another semiconductor device includes a first semiconductor chip, a second semiconductor chip, the first semiconductor chip, a first main electrode electrically connected to the second semiconductor chip, and the first semiconductor chip.
  • the first main electrode has a first electrode portion whose one end is electrically connected to the first semiconductor chip, a second electrode portion whose one end is electrically connected to the second semiconductor chip, and the first A connecting portion connecting the other end of the electrode portion and the other end of the second electrode portion, a main body portion connected to the connecting portion, and an external connection connected to a portion of the main body portion on the first electrode portion side And an inductance of a current path from one end of the first electrode portion to the external connection portion when the influence of the magnetic field from the second main electrode is eliminated, and from one end of the second electrode portion
  • the inductance of the current path to the external connection is non-uniform, and the inductance of the current path from one end of the first electrode to the external connection by the magnetic field from the second main electrode, and the second electrode
  • the inductance of the current path from one end of the part to the external connection part is made uniform That.
  • the inductance of the plurality of current paths of the main electrode can be made uniform.
  • FIG. 5 is a plan view of the inside of the semiconductor device of FIG. 4.
  • FIG. 5 is an internal side view of the semiconductor device of FIG. 4 when viewed from the arrow direction.
  • FIG. 5 is a perspective view of the main electrode of a comparative example. It is the figure which showed the flow of the electric current in the main electrode at the time of IGBT energization with the arrow.
  • FIG. 1 is a perspective view of a main electrode provided in the semiconductor device according to the first embodiment of the present invention.
  • the main electrode 10 includes a first electrode portion 12. The length from the one end 12a to the other end 12b of the first electrode portion 12 is a.
  • the main electrode 10 includes a second electrode portion 14. The length from the one end 14a to the other end 14b of the second electrode portion 14 is b. a (length from one end 12a to the other end 12b of the first electrode portion 12) is longer than b (length from one end 14a to the other end 14b of the second electrode portion 14).
  • the other end 12 b of the first electrode portion 12 and the other end 14 b of the second electrode portion 14 are connected by a connecting portion 16.
  • a main body 18 is connected to the connecting portion 16.
  • the main body portion 18 is a portion extending from the connecting portion 16 in the positive Z direction.
  • a part of the main body portion 18 is defined as a reverse current portion 18a.
  • the reverse current portion 18 a is a portion of the main body portion 18 where a current in the direction opposite to the first electrode portion 12 flows above the first electrode portion 12.
  • the external connection part 20 is connected to the upper end of the main body part 18.
  • the external connection unit 20 is a part connected to the outside.
  • the external connection unit 20 is connected to a portion of the main body unit 18 on the first electrode unit 12 side. That is, since the external connection portion 20 is not directly above the coupling portion 16 but directly above the first electrode portion 12, the X coordinate of the external connection portion 20 is a value obtained by shifting the X coordinate of the coupling portion 16 to the minus side. Note that the position (X coordinate) of the external connection unit 20 cannot be changed because it is determined by the standard package structure defined by the standard.
  • FIG. 2 is a perspective view showing electrical connection between the main electrode 10 and the semiconductor chip.
  • FIG. 2 shows a first insulating substrate 50 and a second insulating substrate 52.
  • Metal patterns 60, 62, and 64 are formed on the first insulating substrate 50.
  • the back surface of the three diodes 66 a is fixed to the metal pattern 60.
  • On the metal pattern 64 the back surfaces of the three IGBTs 66b are fixed.
  • the three diodes 66a and the three IGBTs 66b are collectively referred to as a first semiconductor chip 66.
  • the surface of the diode 66 a and the metal pattern 62 are connected by a wire 68.
  • the surface of the IGBT 66 b and the metal pattern 62 are connected by a wire 68.
  • Metal patterns 70, 72, and 74 are formed on the second insulating substrate 52.
  • the back surface of the three diodes 76 a is fixed to the metal pattern 70.
  • the back surfaces of the three IGBTs 76b are fixed.
  • the three diodes 76a and the three IGBTs 76b are collectively referred to as a second semiconductor chip 76.
  • the surface of the diode 76 a and the metal pattern 72 are connected by a wire 78.
  • the surface of the IGBT 76 b and the metal pattern 72 are connected by a wire 78.
  • the one end 12 a of the first electrode portion 12 is connected to the metal pattern 62. Thereby, the one end 12a of the 1st electrode part 12 is electrically connected to the surface of the diode 66a, and the surface of IGBT66b. Accordingly, one end 12 a of the first electrode portion 12 is electrically connected to the first semiconductor chip 66.
  • the one end 14 a of the second electrode portion 14 is connected to the metal pattern 72. Thereby, the one end 14a of the 2nd electrode part 14 is electrically connected to the surface of the diode 76a, and the surface of IGBT76b. Accordingly, one end 14 a of the second electrode portion 14 is electrically connected to the second semiconductor chip 76.
  • the main electrode 10 functions as an emitter electrode that is electrically connected to the first semiconductor chip 66 and the second semiconductor chip 76.
  • FIG. 3 is a perspective view showing another main electrode.
  • Another main electrode 80 is connected to the metal patterns 60, 64, 70, 74.
  • Another main electrode 80 functions as a collector electrode.
  • another main electrode 80 is patterned in order to distinguish the other main electrode 80 from the main electrode 10.
  • FIG. 4 is an external view of the semiconductor device according to the first embodiment of the present invention.
  • This semiconductor device includes a base plate 100.
  • the base plate 100 is formed with an attachment hole 100a for screwing the semiconductor device to an external member.
  • a case 102 is formed on the base plate 100.
  • the main electrodes 10 and 104 and the other main electrodes 80 and 106 are exposed to the outside from the case 102.
  • the main electrode 104 has the same shape as the main electrode 10.
  • Another main electrode 106 has the same shape as another main electrode 80.
  • the auxiliary terminal 108 is also exposed to the outside from the case 102.
  • FIG. 5 is a plan view of the inside of the semiconductor device of FIG. In order to supply a gate drive signal to the IGBT, an insulating substrate 90, a metal pattern 92, and a resistance portion 94 are formed. 6 is an internal side view of the semiconductor device of FIG. 4 when viewed from the direction of the arrow. Solder 110 is used to connect the main electrode 10 and the metal pattern 62. In the case 102, the first semiconductor chip 66 and the second semiconductor chip are sealed with a sealing material 112. A control substrate 114 is formed on the sealing material 112.
  • FIG. 7 is a perspective view of a main electrode of a comparative example.
  • the main electrode 200 of the comparative example is different from the main electrode 10 in that the length c of the first electrode portion 202 and the length d of the second electrode portion 204 are equal.
  • a current flows in the direction of the arrow in the main electrode 200.
  • the direction of the current flowing through the first electrode unit 202 is opposite to the direction of the current flowing through the reverse current unit 18a. Therefore, since the magnetic field generated by the current flowing through the first electrode portion 202 and the magnetic field generated by the current flowing through the reverse current portion 18a cancel each other, the inductance of the first electrode portion 202 decreases.
  • the inductance of the second electrode unit 204 is not reduced. In short, the inductance of the first electrode portion 202 is lowered, but the inductance of the second electrode portion 204 is not lowered.
  • the inductance of the current path from one end 202a of the first electrode part 202 to the external connection part 20 (hereinafter, the current path from one end of the first electrode part to the external connection part is referred to as the first current path), and the second electrode Since the inductance of the current path from one end 204a of the part 204 to the external connection part 20 (hereinafter, the current path from one end of the second electrode part to the external connection part is referred to as a second current path) is different from that of the first semiconductor chip. 2
  • the semiconductor chip cannot be operated evenly.
  • FIG. 8 is a diagram showing the flow of current in the main electrode 10 with arrows when the IGBT is energized.
  • the length a from the one end 12a to the other end 12b of the first electrode portion 12 is longer than the length b from the one end 14a to the other end 14b of the second electrode portion 14. That is, the inductance of the current path (first current path) from one end of the first electrode part to the external connection part when the influence of the magnetic field from the main body part 18 is excluded is from the one end of the second electrode part to the external connection part. It is larger than the inductance of the current path up to (second current path).
  • the inductance of the first electrode section 12 is reduced by the influence of the magnetic field generated by the current flowing through the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform. it can.
  • FIG. 9 is a diagram showing the flow of current in the main electrode when the diode is energized by arrows. Even when the diode is energized, the inductance of the first current path and the inductance of the second current path can be made uniform as in the case of the IGBT energization.
  • the present invention relates to a technique for making the inductances of a plurality of current paths of a main electrode uniform.
  • the main electrode in addition to the emitter electrode, for example, an IGBT collector electrode, a MOS-FET source / drain main electrode, or a main electrode of a power module such as a diode, transistor, or thyristor can be employed.
  • FIG. 10 is a perspective view showing a modification of the main electrode.
  • the main electrode 250 functions as a collector electrode.
  • the length from the one end 252a to the other end 252b of the first electrode portion 252 is longer than the length from the one end 254a to the other end 254b of the second electrode portion 254.
  • the other end 252 b of the first electrode portion 252 and the other end 254 b of the second electrode portion 254 are connected by a connecting portion 256.
  • a part of the main body 258 is a reverse current portion 258a.
  • An external connection portion 260 is connected to the first electrode portion 252 side of the main body portion 258.
  • the inductance of the first current path when the influence of the magnetic field from the main body is eliminated is larger than the inductance of the second current path. . Since the inductance of the first electrode portion is reduced due to the influence of the magnetic field generated by the current flowing through the reverse current portion, the inductance of the first current path and the inductance of the second current path can be made uniform.
  • the first semiconductor chip 66 and the second semiconductor chip 76 can be formed of, for example, Si, but are not limited thereto.
  • the first semiconductor chip 66 and the second semiconductor chip 76 may be formed of SiC to increase their switching speed. Since the impedance due to the inductance component increases when the switching speed is increased, it is particularly effective to make the inductances of the first current path and the second current path uniform.
  • the first semiconductor chip 66 and the second semiconductor chip 76 are not limited to IGBTs and diodes. These modifications can also be applied to semiconductor devices according to the following embodiments.
  • the semiconductor device according to the following embodiment is different from the first embodiment only in the shape of the main electrode. Therefore, in the following embodiments, only the shape of the main electrode will be described.
  • FIG. FIG. 11 is a perspective view of the main electrode 300 provided in the semiconductor device according to the second embodiment of the present invention.
  • the length from one end 302a to the other end 302b of the first electrode portion 302 is longer than the length from one end 204a to the other end 204b of the second electrode portion 204. Therefore, the inductance of the first current path and the inductance of the second current path can be made uniform.
  • the first electrode portion 302 is not limited to the shape shown in FIG.
  • the first electrode unit 302 may be longer than the second electrode unit 204 by making the first electrode unit 302 wave-shaped or comb-shaped.
  • FIG. FIG. 12 is a perspective view of the main electrode 350 provided in the semiconductor device according to the third embodiment of the present invention.
  • the length e from one end 202a of the first electrode portion 202 to the other end 202b is longer than the length f from one end 354a to the other end 354b of the second electrode portion 354. Therefore, the inductance of the first current path and the inductance of the second current path can be made uniform.
  • the length g of the connecting portion 356 is longer than the length f of the second electrode portion 354. Therefore, compared with the main electrode according to the first embodiment, the widths of the first current path and the second current path are widened, so that the inductances of the first current path and the second current path can be lowered.
  • the main electrodes according to Embodiment 1-3 are identical in that the first electrode part is made longer than the second electrode part. These utilize the property that the inductance increases as the current path becomes longer. Therefore, as long as this property can be used, the shapes of the first electrode portion and the second electrode portion are not particularly limited.
  • FIG. FIG. 13 is a perspective view of the main electrode 400 provided in the semiconductor device according to Embodiment 4 of the present invention.
  • the second electrode portion 404 is formed thicker than the first electrode portion 202.
  • the length from the one end 404a to the other end 404b of the second electrode portion 404 is equal to the length from the one end 202a to the other end 202b of the first electrode portion 202.
  • the inductance of the electrode part decreases as the thickness of the electrode part (referring to the first electrode part or the second electrode part, hereinafter the same) increases. Since the second electrode portion 404 is formed thicker than the first electrode portion 202, the inductance of the second current path when the influence of the magnetic field from the main body is eliminated is smaller than the inductance of the first current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • FIG. FIG. 14 is a perspective view of main electrode 450 provided in the semiconductor device according to the fifth embodiment of the present invention.
  • the second electrode part 454 is wider than the first electrode part 202.
  • the length from the one end 454a to the other end 454b of the second electrode portion 454 is equal to the length from the one end 202a to the other end 202b of the first electrode portion 202.
  • the inductance of the electrode part decreases as the width of the electrode part increases. Since the second electrode part 454 is formed wider than the first electrode part 202, the inductance of the second current path when the influence of the magnetic field from the main body part is eliminated is smaller than the inductance of the first current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • FIG. FIG. 15 is a perspective view of the main electrode 500 provided in the semiconductor device according to Embodiment 6 of the present invention.
  • a coating material 502 having a higher magnetic permeability than air is attached to the first electrode portion 202.
  • the covering material 502 is, for example, ferrite.
  • the inductance of the 1st electrode part 202 increases by attaching the coating material 502 whose permeability is higher than air to the 1st electrode part 202.
  • the inductance of the first current path when the influence of the magnetic field from the main body 18 is eliminated is larger than the inductance of the second current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • the covering material 502 is not limited to ferrite as long as it has a higher magnetic permeability than air. Further, a material having a higher magnetic permeability than air may be applied to the first electrode portion 202.
  • FIG. FIG. 16 is a perspective view of main electrode 550 provided in the semiconductor device according to Embodiment 7 of the present invention.
  • a part of the second electrode portion 204 and the main body portion 18 are connected by an auxiliary connecting portion 556.
  • the auxiliary connecting portion 556 connects the central portion of the second electrode portion 204 and the main body portion 18.
  • the width of the current path connecting the second electrode part 204 and the main body part 18 is widened by the auxiliary connecting part 556. Therefore, the inductance from the second electrode part 204 to the main body part 18 decreases. That is, the inductance of the second current path when the influence of the magnetic field from the main body 18 is eliminated is smaller than the inductance of the first current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • FIG. 17 is a perspective view of main electrode 600 provided in the semiconductor device according to Embodiment 8 of the present invention.
  • the connecting portion 606 has a thin connecting portion 606a and a thick connecting portion 606b.
  • the thin connecting portion 606 a is in contact with the other end 202 b of the first electrode portion 202.
  • the thick connecting portion 606 b is in contact with the other end 204 b of the second electrode portion 204.
  • the connecting portion 606 is thicker at the portion connected to the other end 204b of the second electrode portion 204 than at the portion connected to the other end 202b of the first electrode portion 202.
  • the current in the first current path mainly passes through the thin connecting portion 606a.
  • the current in the second current path mainly passes through the thick connecting portion 606b.
  • the inductance of the current path including the connecting portion decreases. Therefore, when the influence of the magnetic field from the main body portion 18 is eliminated, the inductance of the second current path including the thick coupling portion 606b is smaller than the inductance of the first current path. Therefore, when the inductance of the first electrode unit 202 is reduced by the magnetic field from the reverse current unit 18a, the inductance of the first current path and the inductance of the second current path can be made uniform.
  • FIG. FIG. 18 is a perspective view of main electrode 650 provided in the semiconductor device according to Embodiment 9 of the present invention.
  • the connecting portion 656 includes a first connecting portion 656 a connected to the other end 202 b of the first electrode portion 202 and a second connecting portion 656 b connected to the other end 204 b of the second electrode portion 204. Since the slit 656c is formed between the first connecting portion 656a and the second connecting portion 656b, the first connecting portion 656a and the second connecting portion 656b do not contact each other.
  • a slit 18b connected to the slit 656c is formed on the first electrode portion 202 side of the main body portion 18.
  • a slit 18c is formed above the slit 18b.
  • the slits 18 b and 18 c are formed in a direction parallel to the longitudinal direction of the first electrode portion 202.
  • the current path length from one end 202a of the first electrode part 202 to the external connection part 20 is reduced from the one end 204a of the second electrode part 204 to the external connection part by the slit 656c of the coupling part 656 and the slits 18b and 18c of the main body part 18. It is longer than the current path length up to 20. Therefore, the inductance of the first current path when the influence of the magnetic field from the main body 18 is eliminated is larger than the inductance of the second current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • a slit different from the slits 656c, 18b, and 18c shown in FIG. 18 may be formed.
  • FIG. FIG. 19 is a perspective view of main electrode 700 provided in the semiconductor device according to Embodiment 10 of the present invention.
  • An opening 206 a is formed on the first electrode portion 202 side of the connecting portion 206.
  • An opening 18d is formed in a portion of the main body portion 18 on the first electrode portion 202 side.
  • the opening 18 d is preferably formed on the first electrode portion 202 side of the main body 18 and on the lower portion of the main body 18.
  • the opening 206a and the opening 18d mainly narrow the width of the first current path. Therefore, the inductance of the first current path when the influence of the magnetic field from the main body 18 is eliminated is larger than the inductance of the second current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • the opening may be formed in the first electrode portion side of the connecting portion 206 or the first electrode portion side of the main body portion without forming the opening in both the connecting portion and the main body portion.
  • FIG. FIG. 20 is a perspective view of main electrode 750 provided in the semiconductor device according to Embodiment 11 of the present invention.
  • a slit 18e extending in parallel with the first electrode portion 202 is formed in a portion of the main body portion 18 on the first electrode portion 202 side.
  • the slit 18e forms a non-energized portion 18f through which almost no current flows.
  • the distance from the first electrode part 202 to the reverse current part 18a can be made longer than the distance from the first electrode part 202 to the reverse current part when the non-conductive part is not formed. it can. Further, the distance from the first electrode portion 202 to the reverse current portion 18 a is longer than the distance from the second electrode portion 204 to the main body portion 18 above the second electrode portion 204.
  • the distance between the reverse current portion 18a and the first electrode portion 202 is increased by the slit 18e, the influence of the magnetic field from the reverse current portion 18a on the inductance of the first electrode portion 202 can be suppressed.
  • the slit 18e is formed, the first current path and the second current path are longer than when the slit 18e is not formed, so that the inductance of the first current path and the second current path is increased. Accordingly, the influence of the reverse current portion on the inductance of the first electrode portion is further reduced. Therefore, the inductance of the first current path and the second current path can be made uniform.
  • FIG. 21 is a perspective view of a main electrode according to a modification.
  • the slit 18g is formed only directly above the first electrode portion 202.
  • the slit 18g forms a non-energized portion 18h through which almost no current flows.
  • the reverse current portion 18a is greatly separated from the first electrode portion 202 and hardly affects the inductance of the first electrode portion.
  • the slit 18g is shorter than the slit 18e, the length of the first current path and the length of the second current path can be shortened.
  • the slit of the main body portion does not have to be formed in a direction parallel to the first electrode portion 202.
  • the reverse current portion can be separated from the first electrode portion by forming the slit on the first electrode portion side of the main body portion and positioning the reverse current portion above the slit. As long as this effect is obtained, the shape of the slit is not limited.
  • FIG. FIG. 22 is a perspective view of main electrode 850 provided in the semiconductor device according to Embodiment 12 of the present invention.
  • a distance y1 from the first electrode portion 202 to the reverse current portion 18a is longer than a distance y2 from the second electrode portion 204 to the main body portion 18 above the second electrode portion 204.
  • the reverse current portion 18a is far away from the first electrode portion 202 and hardly affects the inductance of the first electrode portion 202. Therefore, the inductance of the first current path and the inductance of the second current path can be made uniform.
  • FIG. FIG. 23 is a perspective view of main electrodes 200 and 900 provided in the semiconductor device according to Embodiment 13 of the present invention.
  • the main electrode 200 is the main electrode 200 of the comparative example shown in FIG.
  • the main electrode 200 is referred to as a first main electrode.
  • the first main electrode functions as an emitter electrode.
  • the second main electrode 900 functions as a collector electrode.
  • the first main electrode and the second main electrode 900 are electrically connected to the first semiconductor chip and the second semiconductor chip, respectively.
  • the second main electrode 900 includes a third electrode portion 902 whose one end 902a is electrically connected to the first semiconductor chip.
  • the second main electrode 900 includes a fourth electrode portion 904 whose one end 904a is electrically connected to the second semiconductor chip.
  • the other end 902 b of the third electrode portion 902 and the other end 904 b of the fourth electrode portion 904 are connected to the connecting portion 906.
  • the connecting portion 906 is connected to the main body portion 908.
  • An external connection portion 910 is connected to the main body portion 908 on the fourth electrode portion 904 side.
  • the direction of the current flowing through the second electrode unit 204 is opposite to the direction of the current flowing through the fourth electrode unit 904.
  • the direction of current flowing through the first electrode unit 202 is opposite to the direction of current flowing through the third electrode unit 902.
  • the distance from the second electrode part 204 to the fourth electrode part 904 is smaller than the distance from the first electrode part 202 to the third electrode part 902.
  • the amount of inductance decrease of the second electrode unit 204 due to the magnetic field generated in the fourth electrode unit 904 is larger than the amount of inductance decrease of the first electrode unit 202 due to the magnetic field generated in the third electrode unit 902. That is, the inductance of the second current path when the influence of the magnetic field from the main body 18 is excluded is smaller than the inductance of the first current path. Therefore, when the inductance of the first electrode unit 202 is reduced by the magnetic field from the reverse current unit 18a, the inductance of the first current path and the inductance of the second current path can be made uniform.
  • FIG. FIG. 24 is a perspective view of main electrodes 200 and 950 included in the semiconductor device according to Embodiment 14 of the present invention.
  • the main electrode 200 is referred to as a first main electrode.
  • the first main electrode functions as an emitter electrode of the first semiconductor chip and the second semiconductor chip.
  • the second main electrode 950 functions as a collector electrode for the first semiconductor chip and the second semiconductor chip.
  • the second main electrode 950 has a third electrode portion 952 and a fourth electrode portion 954.
  • the connecting portion 956 connects the other end of the third electrode portion 952 and the other end of the fourth electrode portion 954.
  • the connecting portion 956 is connected to the main body portion 958.
  • An external connection portion 960 is connected to the fourth electrode portion 954 side of the main body portion 958.
  • the second main electrode 950 has a fifth electrode portion 958a through which a current in the same direction as the first electrode portion 202 flows. Accordingly, the magnetic field from the reverse current portion 18a decreases the inductance of the first electrode portion 202, but the magnetic field from the fifth electrode portion 958a increases the inductance of the first electrode portion 202. Eventually, the inductance of the first electrode unit 202 is not substantially affected by the outside, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
  • the second main electrode 950 according to the fourteenth embodiment of the present invention is arranged so that the magnetic field generated by the current flowing through the second main electrode 950 increases the inductance of the first electrode unit 202.
  • the important point is that the inductance increase amount of the first electrode portion 202 due to the magnetic field from the second main electrode 950 is made larger than the inductance increase amount of the second electrode portion 204 due to the magnetic field from the second main electrode 950. .
  • the second main electrode 900 is arranged such that the magnetic field generated by the current flowing through the second main electrode 900 reduces the inductance of the second electrode unit 204.
  • the important point is to increase the inductance reduction amount of the second electrode portion 204 due to the magnetic field from the second main electrode 900, rather than the inductance reduction amount of the first electrode portion 202 due to the magnetic field from the second main electrode 900. .
  • the thirteenth and fourteenth embodiments coincide with each other in that the inductance of the first current path and the inductance of the second current path when the influence of the magnetic field from the second main electrode is excluded (first characteristic). .
  • the thirteenth and fourteenth embodiments are identical in that this non-uniformity is eliminated by the magnetic field from the second main electrode (second feature). As long as it has the 1st characteristic and the 2nd characteristic, various deformation

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Abstract

This semiconductor device is provided with a first semiconductor chip, a second semiconductor chip, and a main electrode which is electrically connected to the first semiconductor chip and the second semiconductor chip. The main electrode is provided with a first electrode section having one end that is electrically connected to the first semiconductor chip, a second electrode section having one end that is electrically connected to the second semiconductor chip, a connection section that connects the other end of the first electrode section and the other end of the second electrode section, a body section connected to the connection section, and an external connection section connected to a portion of the body section on the first electrode section side. The inductance of a current path from the one end of the first electrode section to the external connection section is larger than the inductance of a current path from the one end of the second electrode section to the external connection section when the effect of a magnetic field from the body section is eliminated.

Description

半導体装置Semiconductor device
　この発明は、例えば、電鉄又は風力発電などに用いられる半導体装置に関する。 The present invention relates to a semiconductor device used for, for example, electric railway or wind power generation.
　特許文献１には、第１絶縁基板１０４ａの上に形成された第１半導体チップと第２絶縁基板１０４ｂの上に形成された第２半導体チップが開示されている。第１の主電極（主端子１１１）は第１半導体チップと第２半導体チップに接続されている。第２の主電極（主端子１１２）も第１半導体チップと第２半導体チップに接続されている。 Patent Document 1 discloses a first semiconductor chip formed on a first insulating substrate 104a and a second semiconductor chip formed on a second insulating substrate 104b. The first main electrode (main terminal 111) is connected to the first semiconductor chip and the second semiconductor chip. The second main electrode (main terminal 112) is also connected to the first semiconductor chip and the second semiconductor chip.
日本特開平１０－０９３０１６号公報Japanese Patent Laid-Open No. 10-093016
　第１半導体チップに電気的に接続された第１電極部と、第２半導体チップに電気的に接続された第２電極部とが連結部で接続された主電極を用いることがある。この場合、第１電極部を経由する電流経路のインダクタンスと、第２電極部を経由する電流経路のインダクタンスを一致させることが好ましい。 A main electrode in which a first electrode part electrically connected to the first semiconductor chip and a second electrode part electrically connected to the second semiconductor chip are connected by a connecting part may be used. In this case, it is preferable that the inductance of the current path passing through the first electrode portion and the inductance of the current path passing through the second electrode portion are matched.
　しかしながら、例えば第１電極部を流れる電流により生じる磁界と、第１電極部以外の部分を流れる電流により生じる磁界とが打ち消しあい、第１電極部のインダクタンスが低下することがある。そうすると、第１電極部を経由する電流経路のインダクタンスと、第２電極部を経由する電流経路のインダクタンスを一致させることができない問題があった。 However, for example, the magnetic field generated by the current flowing through the first electrode part and the magnetic field generated by the current flowing through the part other than the first electrode part cancel each other, and the inductance of the first electrode part may decrease. Then, there was a problem that the inductance of the current path passing through the first electrode part and the inductance of the current path passing through the second electrode part could not be matched.
　第１電極部を経由する電流経路のインダクタンスと、第２電極部を経由する電流経路のインダクタンスが一致しないと、第１電極部を経由する電流経路のインピーダンスと第２電極部を経由する電流経路のインピーダンスが不均一となる。これにより、電流を流し始める際及び電流を遮断する際に、第１半導体チップと第２半導体チップの電流値が不均一となり、第１半導体チップと第２半導体チップのいずれかの劣化が早まる問題があった。 If the inductance of the current path passing through the first electrode part and the inductance of the current path passing through the second electrode part do not match, the impedance of the current path passing through the first electrode part and the current path passing through the second electrode part Impedance is not uniform. As a result, when the current starts to flow and when the current is cut off, the current values of the first semiconductor chip and the second semiconductor chip become non-uniform, and the deterioration of either the first semiconductor chip or the second semiconductor chip is accelerated. was there.
　本発明は上述の問題を解決するためになされたものであり、主電極の複数の電流経路のインダクタンスを均一にすることができる半導体装置を提供することを目的とする。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device that can make inductances of a plurality of current paths of a main electrode uniform.
　本願の発明にかかる半導体装置は、第１半導体チップと、第２半導体チップと、該第１半導体チップと該第２半導体チップに電気的に接続された主電極と、を備える。該主電極は、一端が該第１半導体チップと電気的に接続された第１電極部と、一端が該第２半導体チップと電気的に接続された第２電極部と、該第１電極部の他端と該第２電極部の他端を接続する連結部と、該連結部と接続された本体部と、該本体部の該第１電極部側の部分と接続された外部接続部と、を備え、該本体部からの磁界の影響を排除したときの、該第１電極部の一端から該外部接続部までの電流経路のインダクタンスは、該第２電極部の一端から該外部接続部までの電流経路のインダクタンスより大きいことを特徴とする。 A semiconductor device according to the present invention includes a first semiconductor chip, a second semiconductor chip, and a main electrode electrically connected to the first semiconductor chip and the second semiconductor chip. The main electrode has a first electrode portion whose one end is electrically connected to the first semiconductor chip, a second electrode portion whose one end is electrically connected to the second semiconductor chip, and the first electrode portion. A connecting portion connecting the other end of the second electrode portion and the other end of the second electrode portion, a main body portion connected to the connecting portion, and an external connecting portion connected to a portion of the main body portion on the first electrode portion side. The inductance of the current path from one end of the first electrode portion to the external connection portion when the influence of the magnetic field from the main body portion is eliminated is from the one end of the second electrode portion to the external connection portion. It is characterized by being larger than the inductance of the current path up to.
　本願の発明に係る他の半導体装置は、第１半導体チップと、第２半導体チップと、該第１半導体チップと該第２半導体チップに電気的に接続された主電極と、を備える。該主電極は、一端が該第１半導体チップと電気的に接続された第１電極部と、一端が該第２半導体チップと電気的に接続された第２電極部と、該第１電極部の他端と該第２電極部の他端を接続する連結部と、該連結部と接続された本体部と、該本体部の該第１電極部側の部分と接続された外部接続部と、を備え、該第１電極部から、該本体部のうち該第１電極部の上方において該第１電極部と反対方向の電流が流れる部分である逆電流部までの距離は、該第２電極部から該第２電極部の上方の該本体部までの距離より長いことを特徴とする。 Another semiconductor device according to the present invention includes a first semiconductor chip, a second semiconductor chip, and a main electrode electrically connected to the first semiconductor chip and the second semiconductor chip. The main electrode has a first electrode portion whose one end is electrically connected to the first semiconductor chip, a second electrode portion whose one end is electrically connected to the second semiconductor chip, and the first electrode portion. A connecting portion connecting the other end of the second electrode portion and the other end of the second electrode portion, a main body portion connected to the connecting portion, and an external connecting portion connected to a portion of the main body portion on the first electrode portion side. The distance from the first electrode part to the reverse current part, which is the part of the main body part above which the current flows in the direction opposite to the first electrode part, is the second part. It is longer than the distance from the electrode part to the main body part above the second electrode part.
　本願の発明に係る他の半導体装置は、第１半導体チップと、第２半導体チップと、該第１半導体チップと該第２半導体チップに電気的に接続された第１主電極と、該第１半導体チップと該第２半導体チップに電気的に接続された第２主電極と、を備える。該第１主電極は、一端が該第１半導体チップと電気的に接続された第１電極部と、一端が該第２半導体チップと電気的に接続された第２電極部と、該第１電極部の他端と該第２電極部の他端を接続する連結部と、該連結部と接続された本体部と、該本体部の該第１電極部側の部分と接続された外部接続部と、を備え、該第２主電極からの磁界の影響を排除したときの、該第１電極部の一端から該外部接続部までの電流経路のインダクタンスと、該第２電極部の一端から該外部接続部までの電流経路のインダクタンスは不均一であり、該第２主電極からの磁界によって、該第１電極部の一端から該外部接続部までの電流経路のインダクタンスと、該第２電極部の一端から該外部接続部までの電流経路のインダクタンスを均一にすることを特徴とする。 Another semiconductor device according to the present invention includes a first semiconductor chip, a second semiconductor chip, the first semiconductor chip, a first main electrode electrically connected to the second semiconductor chip, and the first semiconductor chip. A semiconductor chip and a second main electrode electrically connected to the second semiconductor chip. The first main electrode has a first electrode portion whose one end is electrically connected to the first semiconductor chip, a second electrode portion whose one end is electrically connected to the second semiconductor chip, and the first A connecting portion connecting the other end of the electrode portion and the other end of the second electrode portion, a main body portion connected to the connecting portion, and an external connection connected to a portion of the main body portion on the first electrode portion side And an inductance of a current path from one end of the first electrode portion to the external connection portion when the influence of the magnetic field from the second main electrode is eliminated, and from one end of the second electrode portion The inductance of the current path to the external connection is non-uniform, and the inductance of the current path from one end of the first electrode to the external connection by the magnetic field from the second main electrode, and the second electrode The inductance of the current path from one end of the part to the external connection part is made uniform That.
　本発明のその他の特徴は以下に明らかにする。 Other features of the present invention will be clarified below.
　この発明によれば、主電極の複数の電流経路のインダクタンスを均一にすることができる。 According to this invention, the inductance of the plurality of current paths of the main electrode can be made uniform.
本発明の実施の形態１に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 1 of this invention is provided. 主電極と半導体チップとの電気的接続を示す斜視図である。It is a perspective view which shows the electrical connection of a main electrode and a semiconductor chip. 別の主電極を示す斜視図である。It is a perspective view which shows another main electrode. 本発明の実施の形態１に係る半導体装置の外観図である。1 is an external view of a semiconductor device according to a first embodiment of the present invention. 図４の半導体装置の内部の平面図である。FIG. 5 is a plan view of the inside of the semiconductor device of FIG. 4. 図４の半導体装置を矢印方向から見たときの内部側面図である。FIG. 5 is an internal side view of the semiconductor device of FIG. 4 when viewed from the arrow direction. 比較例の主電極の斜視図である。It is a perspective view of the main electrode of a comparative example. ＩＧＢＴ通電時における主電極内の電流の流れを矢印で示した図である。It is the figure which showed the flow of the electric current in the main electrode at the time of IGBT energization with the arrow. ダイオード通電時における主電極内の電流の流れを矢印で示した図である。It is the figure which showed the flow of the electric current in the main electrode at the time of diode energization with the arrow. 主電極の変形例を示す斜視図である。It is a perspective view which shows the modification of a main electrode. 本発明の実施の形態２に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 2 of this invention is provided. 本発明の実施の形態３に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 3 of this invention is provided. 本発明の実施の形態４に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 4 of this invention is provided. 本発明の実施の形態５に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 5 of this invention is provided. 本発明の実施の形態６に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 6 of this invention is provided. 本発明の実施の形態７に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 7 of this invention is provided. 本発明の実施の形態８に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 8 of this invention is provided. 本発明の実施の形態９に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 9 of this invention is provided. 本発明の実施の形態１０に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 10 of this invention is provided. 本発明の実施の形態１１に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 11 of this invention is provided. 変形例に係る主電極の斜視図である。It is a perspective view of the main electrode which concerns on a modification. 本発明の実施の形態１２に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 12 of this invention is provided. 本発明の実施の形態１３に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 13 of this invention is provided. 本発明の実施の形態１４に係る半導体装置が備える主電極の斜視図である。It is a perspective view of the main electrode with which the semiconductor device which concerns on Embodiment 14 of this invention is provided.
　本発明の実施の形態に係る半導体装置について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。 A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.
実施の形態１．
　図１は、本発明の実施の形態１に係る半導体装置が備える主電極の斜視図である。主電極１０は、第１電極部１２を備えている。第１電極部１２の一端１２ａから他端１２ｂまでの長さはａである。主電極１０は第２電極部１４を備えている。第２電極部１４の一端１４ａから他端１４ｂまでの長さはｂである。ａ（第１電極部１２の一端１２ａから他端１２ｂまでの長さ）は、ｂ（第２電極部１４の一端１４ａから他端１４ｂまでの長さ）より長い。 Embodiment 1 FIG.
FIG. 1 is a perspective view of a main electrode provided in the semiconductor device according to the first embodiment of the present invention. The main electrode 10 includes a first electrode portion 12. The length from the one end 12a to the other end 12b of the first electrode portion 12 is a. The main electrode 10 includes a second electrode portion 14. The length from the one end 14a to the other end 14b of the second electrode portion 14 is b. a (length from one end 12a to the other end 12b of the first electrode portion 12) is longer than b (length from one end 14a to the other end 14b of the second electrode portion 14).
　第１電極部１２の他端１２ｂと第２電極部１４の他端１４ｂは、連結部１６によって接続されている。連結部１６には本体部１８が接続されている。本体部１８は連結部１６からＺ正方向に伸びる部分である。本体部１８の一部を逆電流部１８ａと定義する。逆電流部１８ａとは、本体部１８のうち第１電極部１２の上方において第１電極部１２と反対方向の電流が流れる部分である。 The other end 12 b of the first electrode portion 12 and the other end 14 b of the second electrode portion 14 are connected by a connecting portion 16. A main body 18 is connected to the connecting portion 16. The main body portion 18 is a portion extending from the connecting portion 16 in the positive Z direction. A part of the main body portion 18 is defined as a reverse current portion 18a. The reverse current portion 18 a is a portion of the main body portion 18 where a current in the direction opposite to the first electrode portion 12 flows above the first electrode portion 12.
　本体部１８の上端には外部接続部２０が接続されている。外部接続部２０は外部と接続される部分である。外部接続部２０は、本体部１８の第１電極部１２側の部分に接続されている。つまり、外部接続部２０は連結部１６の直上ではなく第１電極部１２の直上にあるので、外部接続部２０のＸ座標は連結部１６のＸ座標をマイナス側にシフトした値となる。なお、外部接続部２０の位置（Ｘ座標）は、規格で定められた標準パッケージ構造によって決まるので変更できない。 The external connection part 20 is connected to the upper end of the main body part 18. The external connection unit 20 is a part connected to the outside. The external connection unit 20 is connected to a portion of the main body unit 18 on the first electrode unit 12 side. That is, since the external connection portion 20 is not directly above the coupling portion 16 but directly above the first electrode portion 12, the X coordinate of the external connection portion 20 is a value obtained by shifting the X coordinate of the coupling portion 16 to the minus side. Note that the position (X coordinate) of the external connection unit 20 cannot be changed because it is determined by the standard package structure defined by the standard.
　図２は、主電極１０と半導体チップとの電気的接続を示す斜視図である。図２には第１絶縁基板５０と第２絶縁基板５２が示されている。第１絶縁基板５０には金属パターン６０、６２、６４が形成されている。金属パターン６０には３つのダイオード６６ａの裏面が固着されている。金属パターン６４には３つのＩＧＢＴ６６ｂの裏面が固着されている。３つのダイオード６６ａと３つのＩＧＢＴ６６ｂをまとめて第１半導体チップ６６と称する。ダイオード６６ａの表面と金属パターン６２はワイヤ６８で接続されている。ＩＧＢＴ６６ｂの表面と金属パターン６２はワイヤ６８で接続されている。 FIG. 2 is a perspective view showing electrical connection between the main electrode 10 and the semiconductor chip. FIG. 2 shows a first insulating substrate 50 and a second insulating substrate 52. Metal patterns 60, 62, and 64 are formed on the first insulating substrate 50. The back surface of the three diodes 66 a is fixed to the metal pattern 60. On the metal pattern 64, the back surfaces of the three IGBTs 66b are fixed. The three diodes 66a and the three IGBTs 66b are collectively referred to as a first semiconductor chip 66. The surface of the diode 66 a and the metal pattern 62 are connected by a wire 68. The surface of the IGBT 66 b and the metal pattern 62 are connected by a wire 68.
　第２絶縁基板５２には金属パターン７０、７２、７４が形成されている。金属パターン７０には３つのダイオード７６ａの裏面が固着されている。金属パターン７４には３つのＩＧＢＴ７６ｂの裏面が固着されている。３つのダイオード７６ａと３つのＩＧＢＴ７６ｂをまとめて第２半導体チップ７６と称する。ダイオード７６ａの表面と金属パターン７２はワイヤ７８で接続されている。ＩＧＢＴ７６ｂの表面と金属パターン７２はワイヤ７８で接続されている。 Metal patterns 70, 72, and 74 are formed on the second insulating substrate 52. The back surface of the three diodes 76 a is fixed to the metal pattern 70. On the metal pattern 74, the back surfaces of the three IGBTs 76b are fixed. The three diodes 76a and the three IGBTs 76b are collectively referred to as a second semiconductor chip 76. The surface of the diode 76 a and the metal pattern 72 are connected by a wire 78. The surface of the IGBT 76 b and the metal pattern 72 are connected by a wire 78.
　第１電極部１２の一端１２ａは金属パターン６２に接続されている。これにより、第１電極部１２の一端１２ａは、ダイオード６６ａの表面とＩＧＢＴ６６ｂの表面に電気的に接続されている。従って、第１電極部１２の一端１２ａは第１半導体チップ６６と電気的に接続されている。 The one end 12 a of the first electrode portion 12 is connected to the metal pattern 62. Thereby, the one end 12a of the 1st electrode part 12 is electrically connected to the surface of the diode 66a, and the surface of IGBT66b. Accordingly, one end 12 a of the first electrode portion 12 is electrically connected to the first semiconductor chip 66.
　第２電極部１４の一端１４ａは金属パターン７２に接続されている。これにより、第２電極部１４の一端１４ａは、ダイオード７６ａの表面とＩＧＢＴ７６ｂの表面に電気的に接続されている。従って、第２電極部１４の一端１４ａは第２半導体チップ７６と電気的に接続されている。主電極１０は、第１半導体チップ６６と第２半導体チップ７６に電気的に接続されたエミッタ電極として機能する。 The one end 14 a of the second electrode portion 14 is connected to the metal pattern 72. Thereby, the one end 14a of the 2nd electrode part 14 is electrically connected to the surface of the diode 76a, and the surface of IGBT76b. Accordingly, one end 14 a of the second electrode portion 14 is electrically connected to the second semiconductor chip 76. The main electrode 10 functions as an emitter electrode that is electrically connected to the first semiconductor chip 66 and the second semiconductor chip 76.
　主電極１０に加えてもう１つの主電極（別の主電極）が第１絶縁基板５０と第２絶縁基板５２に固定される。図３は、別の主電極を示す斜視図である。別の主電極８０は金属パターン６０、６４、７０、７４に接続されている。別の主電極８０はコレクタ電極として機能する。なお、図３では別の主電極８０と主電極１０を区別するために、別の主電極８０に模様をつけた。 In addition to the main electrode 10, another main electrode (another main electrode) is fixed to the first insulating substrate 50 and the second insulating substrate 52. FIG. 3 is a perspective view showing another main electrode. Another main electrode 80 is connected to the metal patterns 60, 64, 70, 74. Another main electrode 80 functions as a collector electrode. In FIG. 3, another main electrode 80 is patterned in order to distinguish the other main electrode 80 from the main electrode 10.
　図４は、本発明の実施の形態１に係る半導体装置の外観図である。この半導体装置は、ベース板１００を備えている。ベース板１００には、半導体装置を外部の部材にねじ止めするための取り付け穴１００ａが形成されている。ベース板１００の上にはケース１０２が形成されている。ケース１０２から主電極１０、１０４、及び別の主電極８０、１０６が外部に露出している。主電極１０４は主電極１０と同じ形状である。別の主電極１０６は別の主電極８０と同じ形状である。ケース１０２からは補助端子１０８も外部に露出している。 FIG. 4 is an external view of the semiconductor device according to the first embodiment of the present invention. This semiconductor device includes a base plate 100. The base plate 100 is formed with an attachment hole 100a for screwing the semiconductor device to an external member. A case 102 is formed on the base plate 100. The main electrodes 10 and 104 and the other main electrodes 80 and 106 are exposed to the outside from the case 102. The main electrode 104 has the same shape as the main electrode 10. Another main electrode 106 has the same shape as another main electrode 80. The auxiliary terminal 108 is also exposed to the outside from the case 102.
　図５は、図４の半導体装置の内部の平面図である。ＩＧＢＴにゲート駆動信号を供給するために、絶縁基板９０、金属パターン９２、及び抵抗部９４が形成されている。図６は、図４の半導体装置を矢印方向から見たときの内部側面図である。主電極１０と金属パターン６２との接続等にははんだ１１０を用いる。ケース１０２内では、第１半導体チップ６６と第２半導体チップ等が封止材１１２で封止されている。封止材１１２の上に制御基板１１４が形成されている。 FIG. 5 is a plan view of the inside of the semiconductor device of FIG. In order to supply a gate drive signal to the IGBT, an insulating substrate 90, a metal pattern 92, and a resistance portion 94 are formed. 6 is an internal side view of the semiconductor device of FIG. 4 when viewed from the direction of the arrow. Solder 110 is used to connect the main electrode 10 and the metal pattern 62. In the case 102, the first semiconductor chip 66 and the second semiconductor chip are sealed with a sealing material 112. A control substrate 114 is formed on the sealing material 112.
　ここで、比較例について説明する。図７は、比較例の主電極の斜視図である。比較例の主電極２００は、第１電極部２０２の長さｃと第２電極部２０４の長さｄが等しい点で主電極１０と相違している。例えばＩＧＢＴ通電時には、主電極２００内の矢印の方向に電流が流れる。 Here, a comparative example will be described. FIG. 7 is a perspective view of a main electrode of a comparative example. The main electrode 200 of the comparative example is different from the main electrode 10 in that the length c of the first electrode portion 202 and the length d of the second electrode portion 204 are equal. For example, when the IGBT is energized, a current flows in the direction of the arrow in the main electrode 200.
　第１電極部２０２を流れる電流の向きと逆電流部１８ａを流れる電流の向きは逆方向になる。従って第１電極部２０２を流れる電流によって生じた磁界と、逆電流部１８ａを流れる電流によって生じた磁界が打ち消し合うので、第１電極部２０２のインダクタンスが低下する。 The direction of the current flowing through the first electrode unit 202 is opposite to the direction of the current flowing through the reverse current unit 18a. Therefore, since the magnetic field generated by the current flowing through the first electrode portion 202 and the magnetic field generated by the current flowing through the reverse current portion 18a cancel each other, the inductance of the first electrode portion 202 decreases.
　他方、第２電極部２０４の近くには第２電極部２０４を流れる電流と逆方向の電流はないので、第２電極部２０４を流れる電流によって生じる磁界の打ち消しはない。そのため、第２電極部２０４のインダクタンスの低下はない。要するに、第１電極部２０２のインダクタンスは低下するが、第２電極部２０４のインダクタンスは低下しない。よって、第１電極部２０２の一端２０２ａから外部接続部２０までの電流経路（以後、第１電極部の一端から外部接続部までの電流経路を第１電流経路という）のインダクタンスと、第２電極部２０４の一端２０４ａから外部接続部２０までの電流経路（以後、第２電極部の一端から外部接続部までの電流経路を第２電流経路という）のインダクタンスが異なるので、第１半導体チップと第２半導体チップの均等動作ができない。 On the other hand, since there is no current in the direction opposite to the current flowing through the second electrode portion 204 near the second electrode portion 204, there is no cancellation of the magnetic field caused by the current flowing through the second electrode portion 204. Therefore, the inductance of the second electrode unit 204 is not reduced. In short, the inductance of the first electrode portion 202 is lowered, but the inductance of the second electrode portion 204 is not lowered. Therefore, the inductance of the current path from one end 202a of the first electrode part 202 to the external connection part 20 (hereinafter, the current path from one end of the first electrode part to the external connection part is referred to as the first current path), and the second electrode Since the inductance of the current path from one end 204a of the part 204 to the external connection part 20 (hereinafter, the current path from one end of the second electrode part to the external connection part is referred to as a second current path) is different from that of the first semiconductor chip. 2 The semiconductor chip cannot be operated evenly.
　次いで、本発明の実施の形態１に係る半導体装置の動作について説明する。図８は、ＩＧＢＴ通電時における主電極１０内の電流の流れを矢印で示した図である。第１電極部１２の一端１２ａから他端１２ｂまでの長さａは、第２電極部１４の一端１４ａから他端１４ｂまでの長さｂより長い。つまり、本体部１８からの磁界の影響を排除したときの、第１電極部の一端から外部接続部までの電流経路（第１電流経路）のインダクタンスは、第２電極部の一端から外部接続部までの電流経路（第２電流経路）のインダクタンスより大きくなっている。従って、逆電流部１８ａを流れる電流により生じた磁界の影響を受けて第１電極部１２のインダクタンスが低下することにより、第１電流経路のインダクタンスと第２電流経路のインダクタンスを均一にすることができる。 Next, the operation of the semiconductor device according to the first embodiment of the present invention will be described. FIG. 8 is a diagram showing the flow of current in the main electrode 10 with arrows when the IGBT is energized. The length a from the one end 12a to the other end 12b of the first electrode portion 12 is longer than the length b from the one end 14a to the other end 14b of the second electrode portion 14. That is, the inductance of the current path (first current path) from one end of the first electrode part to the external connection part when the influence of the magnetic field from the main body part 18 is excluded is from the one end of the second electrode part to the external connection part. It is larger than the inductance of the current path up to (second current path). Accordingly, the inductance of the first electrode section 12 is reduced by the influence of the magnetic field generated by the current flowing through the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform. it can.
　図９は、ダイオード通電時における主電極内の電流の流れを矢印で示した図である。ダイオード通電時においても、ＩＧＢＴ通電時と同様に、第１電流経路のインダクタンスと第２電流経路のインダクタンスを均一にすることができる。 FIG. 9 is a diagram showing the flow of current in the main electrode when the diode is energized by arrows. Even when the diode is energized, the inductance of the first current path and the inductance of the second current path can be made uniform as in the case of the IGBT energization.
　本発明は、主電極の複数の電流経路のインダクタンスを均一にする技術に関する。そのため、主電極としては、エミッタ電極以外に、例えばＩＧＢＴのコレクタ電極、ＭＯＳ－ＦＥＴのソース・ドレイン主電極、又はダイオード、トランジスタ、若しくはサイリスタ等のパワーモジュールの主電極に採用することができる。 The present invention relates to a technique for making the inductances of a plurality of current paths of a main electrode uniform. For this reason, as the main electrode, in addition to the emitter electrode, for example, an IGBT collector electrode, a MOS-FET source / drain main electrode, or a main electrode of a power module such as a diode, transistor, or thyristor can be employed.
　図１０は、主電極の変形例を示す斜視図である。主電極２５０はコレクタ電極として機能する。第１電極部２５２の一端２５２ａから他端２５２ｂまでの長さは、第２電極部２５４の一端２５４ａから他端２５４ｂまでの長さより長い。第１電極部２５２の他端２５２ｂと第２電極部２５４の他端２５４ｂは連結部２５６で接続されている。また、本体部２５８の一部は逆電流部２５８ａとなっている。本体部２５８の第１電極部２５２側には外部接続部２６０が接続されている。 FIG. 10 is a perspective view showing a modification of the main electrode. The main electrode 250 functions as a collector electrode. The length from the one end 252a to the other end 252b of the first electrode portion 252 is longer than the length from the one end 254a to the other end 254b of the second electrode portion 254. The other end 252 b of the first electrode portion 252 and the other end 254 b of the second electrode portion 254 are connected by a connecting portion 256. A part of the main body 258 is a reverse current portion 258a. An external connection portion 260 is connected to the first electrode portion 252 side of the main body portion 258.
　第１電極部２５２は第２電極部２５４より長く形成されているので、本体部からの磁界の影響を排除したときの第１電流経路のインダクタンスは、第２電流経路のインダクタンスより大きくなっている。そして、逆電流部を流れる電流によって生じた磁界の影響を受けて第１電極部のインダクタンスは低下するので、第１電流経路のインダクタンスと第２電流経路のインダクタンスを均一にすることができる。 Since the first electrode portion 252 is formed longer than the second electrode portion 254, the inductance of the first current path when the influence of the magnetic field from the main body is eliminated is larger than the inductance of the second current path. . Since the inductance of the first electrode portion is reduced due to the influence of the magnetic field generated by the current flowing through the reverse current portion, the inductance of the first current path and the inductance of the second current path can be made uniform.
　第１半導体チップ６６と第２半導体チップ７６は例えばＳｉで形成することができるがこれに限定されない。第１半導体チップ６６と第２半導体チップ７６をＳｉＣで形成してこれらのスイッチング速度を速くしてもよい。スイッチング速度を早くするとインダクタンス成分によるインピーダンスが増大するので、第１電流経路と第２電流経路のインダクタンスを均一にすることが特に有効である。 The first semiconductor chip 66 and the second semiconductor chip 76 can be formed of, for example, Si, but are not limited thereto. The first semiconductor chip 66 and the second semiconductor chip 76 may be formed of SiC to increase their switching speed. Since the impedance due to the inductance component increases when the switching speed is increased, it is particularly effective to make the inductances of the first current path and the second current path uniform.
　第１半導体チップ６６と第２半導体チップ７６は、ＩＧＢＴとダイオードに限定されない。なお、これらの変形は以下の実施の形態に係る半導体装置にも応用できる。 The first semiconductor chip 66 and the second semiconductor chip 76 are not limited to IGBTs and diodes. These modifications can also be applied to semiconductor devices according to the following embodiments.
　以下の実施の形態に係る半導体装置は、主電極の形状だけが実施の形態１と相違する。そのため、以下の実施の形態では主電極の形状についてのみ説明する。 The semiconductor device according to the following embodiment is different from the first embodiment only in the shape of the main electrode. Therefore, in the following embodiments, only the shape of the main electrode will be described.
実施の形態２．
　図１１は、本発明の実施の形態２に係る半導体装置が備える主電極３００の斜視図である。第１電極部３０２の一端３０２ａから他端３０２ｂまでの長さは、第２電極部２０４の一端２０４ａから他端２０４ｂまでの長さより長い。従って、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 Embodiment 2. FIG.
FIG. 11 is a perspective view of the main electrode 300 provided in the semiconductor device according to the second embodiment of the present invention. The length from one end 302a to the other end 302b of the first electrode portion 302 is longer than the length from one end 204a to the other end 204b of the second electrode portion 204. Therefore, the inductance of the first current path and the inductance of the second current path can be made uniform.
　第１電極部３０２は図１１の形状に限定されない。第１電極部３０２を波型又は櫛型とすることで、第１電極部３０２を第２電極部２０４よりも長くしても良い。 The first electrode portion 302 is not limited to the shape shown in FIG. The first electrode unit 302 may be longer than the second electrode unit 204 by making the first electrode unit 302 wave-shaped or comb-shaped.
実施の形態３．
　図１２は、本発明の実施の形態３に係る半導体装置が備える主電極３５０の斜視図である。第１電極部２０２の一端２０２ａから他端２０２ｂまでの長さｅは、第２電極部３５４の一端３５４ａから他端３５４ｂまでの長さｆより長い。従って、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 Embodiment 3 FIG.
FIG. 12 is a perspective view of the main electrode 350 provided in the semiconductor device according to the third embodiment of the present invention. The length e from one end 202a of the first electrode portion 202 to the other end 202b is longer than the length f from one end 354a to the other end 354b of the second electrode portion 354. Therefore, the inductance of the first current path and the inductance of the second current path can be made uniform.
　また、連結部３５６の長さｇは第２電極部３５４の長さｆより長い。従って、実施の形態１に係る主電極と比較して、第１電流経路と第２電流経路の幅が広くなるので、第１電流経路と第２電流経路のインダクタンスを下げることができる。 Also, the length g of the connecting portion 356 is longer than the length f of the second electrode portion 354. Therefore, compared with the main electrode according to the first embodiment, the widths of the first current path and the second current path are widened, so that the inductances of the first current path and the second current path can be lowered.
　実施の形態１－３に係る主電極は、第１電極部を第２電極部よりも長くするという点で一致している。これらは、電流経路が長いほどインダクタンスが増加する性質を利用したものである。従って、この性質を利用できる限りにおいて、第１電極部と第２電極部の形状は特に限定されない。 The main electrodes according to Embodiment 1-3 are identical in that the first electrode part is made longer than the second electrode part. These utilize the property that the inductance increases as the current path becomes longer. Therefore, as long as this property can be used, the shapes of the first electrode portion and the second electrode portion are not particularly limited.
実施の形態４．
　図１３は、本発明の実施の形態４に係る半導体装置が備える主電極４００の斜視図である。第２電極部４０４は、第１電極部２０２より厚く形成されている。なお第２電極部４０４の一端４０４ａから他端４０４ｂまでの長さは、第１電極部２０２の一端２０２ａから他端２０２ｂまでの長さと等しい。 Embodiment 4 FIG.
FIG. 13 is a perspective view of the main electrode 400 provided in the semiconductor device according to Embodiment 4 of the present invention. The second electrode portion 404 is formed thicker than the first electrode portion 202. The length from the one end 404a to the other end 404b of the second electrode portion 404 is equal to the length from the one end 202a to the other end 202b of the first electrode portion 202.
　電極部（第１電極部又は第２電極部のことをいう、以後同じ）の厚みが厚いほどその電極部のインダクタンスが減少する。第２電極部４０４は第１電極部２０２より厚く形成されているので、本体部からの磁界の影響を排除したときの、第２電流経路のインダクタンスは第１電流経路のインダクタンスより小さい。従って、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 The inductance of the electrode part decreases as the thickness of the electrode part (referring to the first electrode part or the second electrode part, hereinafter the same) increases. Since the second electrode portion 404 is formed thicker than the first electrode portion 202, the inductance of the second current path when the influence of the magnetic field from the main body is eliminated is smaller than the inductance of the first current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
実施の形態５．
　図１４は、本発明の実施の形態５に係る半導体装置が備える主電極４５０の斜視図である。第２電極部４５４は、第１電極部２０２よりも幅が広い。なお第２電極部４５４の一端４５４ａから他端４５４ｂまでの長さは、第１電極部２０２の一端２０２ａから他端２０２ｂまでの長さと等しい。 Embodiment 5 FIG.
FIG. 14 is a perspective view of main electrode 450 provided in the semiconductor device according to the fifth embodiment of the present invention. The second electrode part 454 is wider than the first electrode part 202. The length from the one end 454a to the other end 454b of the second electrode portion 454 is equal to the length from the one end 202a to the other end 202b of the first electrode portion 202.
　電極部の幅が広いほどその電極部のインダクタンスが減少する。第２電極部４５４は第１電極部２０２より幅が広く形成されているので、本体部からの磁界の影響を排除したときの、第２電流経路のインダクタンスは第１電流経路のインダクタンスより小さい。従って、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 The inductance of the electrode part decreases as the width of the electrode part increases. Since the second electrode part 454 is formed wider than the first electrode part 202, the inductance of the second current path when the influence of the magnetic field from the main body part is eliminated is smaller than the inductance of the first current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
実施の形態６．
　図１５は、本発明の実施の形態６に係る半導体装置が備える主電極５００の斜視図である。第１電極部２０２に空気より透磁率の高い被覆材料５０２が取り付けられている。被覆材料５０２は例えばフェライトである。 Embodiment 6 FIG.
FIG. 15 is a perspective view of the main electrode 500 provided in the semiconductor device according to Embodiment 6 of the present invention. A coating material 502 having a higher magnetic permeability than air is attached to the first electrode portion 202. The covering material 502 is, for example, ferrite.
　第１電極部２０２に空気より透磁率の高い被覆材料５０２を取り付けたことで、第１電極部２０２のインダクタンスが増加する。これにより、本体部１８からの磁界の影響を排除したときの第１電流経路のインダクタンスは第２電流経路のインダクタンスより大きくなっている。従って、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 The inductance of the 1st electrode part 202 increases by attaching the coating material 502 whose permeability is higher than air to the 1st electrode part 202. Thus, the inductance of the first current path when the influence of the magnetic field from the main body 18 is eliminated is larger than the inductance of the second current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
　被覆材料５０２は、空気より透磁率の高い材料であればフェライトに限定されない。また、第１電極部２０２に空気よりも透磁率の高い材料を塗布してもよい。 The covering material 502 is not limited to ferrite as long as it has a higher magnetic permeability than air. Further, a material having a higher magnetic permeability than air may be applied to the first electrode portion 202.
実施の形態７．
　図１６は、本発明の実施の形態７に係る半導体装置が備える主電極５５０の斜視図である。第２電極部２０４の一部と本体部１８は補助連結部５５６で接続されている。補助連結部５５６は、第２電極部２０４の中央部と本体部１８を接続する。 Embodiment 7 FIG.
FIG. 16 is a perspective view of main electrode 550 provided in the semiconductor device according to Embodiment 7 of the present invention. A part of the second electrode portion 204 and the main body portion 18 are connected by an auxiliary connecting portion 556. The auxiliary connecting portion 556 connects the central portion of the second electrode portion 204 and the main body portion 18.
　第２電極部２０４と本体部１８を結ぶ電流経路の幅は補助連結部５５６により広げられている。そのため、第２電極部２０４から本体部１８にかけてのインダクタンスが減少する。つまり、本体部１８からの磁界の影響を排除したときの、第２電流経路のインダクタンスは第１電流経路のインダクタンスより小さくなっている。従って、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 The width of the current path connecting the second electrode part 204 and the main body part 18 is widened by the auxiliary connecting part 556. Therefore, the inductance from the second electrode part 204 to the main body part 18 decreases. That is, the inductance of the second current path when the influence of the magnetic field from the main body 18 is eliminated is smaller than the inductance of the first current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
実施の形態８．
　図１７は、本発明の実施の形態８に係る半導体装置が備える主電極６００の斜視図である。連結部６０６は、薄い連結部６０６ａと厚い連結部６０６ｂを有している。薄い連結部６０６ａは第１電極部２０２の他端２０２ｂに接している。厚い連結部６０６ｂは第２電極部２０４の他端２０４ｂに接している。つまり、連結部６０６は、第１電極部２０２の他端２０２ｂと接続される部分より、第２電極部２０４の他端２０４ｂと接続される部分の方が厚くなっている。 Embodiment 8 FIG.
FIG. 17 is a perspective view of main electrode 600 provided in the semiconductor device according to Embodiment 8 of the present invention. The connecting portion 606 has a thin connecting portion 606a and a thick connecting portion 606b. The thin connecting portion 606 a is in contact with the other end 202 b of the first electrode portion 202. The thick connecting portion 606 b is in contact with the other end 204 b of the second electrode portion 204. In other words, the connecting portion 606 is thicker at the portion connected to the other end 204b of the second electrode portion 204 than at the portion connected to the other end 202b of the first electrode portion 202.
　第１電流経路の電流は主として薄い連結部６０６ａを通る。他方、第２電流経路の電流は主として厚い連結部６０６ｂを通る。ここで、連結部の厚みが厚いほどその連結部を含む電流経路のインダクタンスが減少する。従って、本体部１８からの磁界の影響を排除したときの、厚い連結部６０６ｂを含む第２電流経路のインダクタンスは第１電流経路のインダクタンスより小さい。よって、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 The current in the first current path mainly passes through the thin connecting portion 606a. On the other hand, the current in the second current path mainly passes through the thick connecting portion 606b. Here, as the thickness of the connecting portion increases, the inductance of the current path including the connecting portion decreases. Therefore, when the influence of the magnetic field from the main body portion 18 is eliminated, the inductance of the second current path including the thick coupling portion 606b is smaller than the inductance of the first current path. Therefore, when the inductance of the first electrode unit 202 is reduced by the magnetic field from the reverse current unit 18a, the inductance of the first current path and the inductance of the second current path can be made uniform.
実施の形態９．
　図１８は、本発明の実施の形態９に係る半導体装置が備える主電極６５０の斜視図である。連結部６５６は、第１電極部２０２の他端２０２ｂと接続された第１連結部６５６ａと、第２電極部２０４の他端２０４ｂと接続された第２連結部６５６ｂを有している。第１連結部６５６ａと第２連結部６５６ｂの間にはスリット６５６ｃが形成されているため、第１連結部６５６ａと第２連結部６５６ｂは接しない。 Embodiment 9 FIG.
FIG. 18 is a perspective view of main electrode 650 provided in the semiconductor device according to Embodiment 9 of the present invention. The connecting portion 656 includes a first connecting portion 656 a connected to the other end 202 b of the first electrode portion 202 and a second connecting portion 656 b connected to the other end 204 b of the second electrode portion 204. Since the slit 656c is formed between the first connecting portion 656a and the second connecting portion 656b, the first connecting portion 656a and the second connecting portion 656b do not contact each other.
　本体部１８の第１電極部２０２側には、スリット６５６ｃとつながるスリット１８ｂが形成されている。スリット１８ｂの上方にはスリット１８ｃが形成されている。スリット１８ｂ、１８ｃは、第１電極部２０２の長手方向と平行方向に形成されている。 A slit 18b connected to the slit 656c is formed on the first electrode portion 202 side of the main body portion 18. A slit 18c is formed above the slit 18b. The slits 18 b and 18 c are formed in a direction parallel to the longitudinal direction of the first electrode portion 202.
　連結部６５６のスリット６５６ｃと、本体部１８のスリット１８ｂ、１８ｃにより、第１電極部２０２の一端２０２ａから外部接続部２０までの電流経路長が、第２電極部２０４の一端２０４ａから外部接続部２０までの電流経路長より長くなっている。そのため、本体部１８からの磁界の影響を排除したときの、第１電流経路のインダクタンスは第２電流経路のインダクタンスよりも大きい。従って、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 The current path length from one end 202a of the first electrode part 202 to the external connection part 20 is reduced from the one end 204a of the second electrode part 204 to the external connection part by the slit 656c of the coupling part 656 and the slits 18b and 18c of the main body part 18. It is longer than the current path length up to 20. Therefore, the inductance of the first current path when the influence of the magnetic field from the main body 18 is eliminated is larger than the inductance of the second current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
　第１電流経路の長さを第２電流経路の長さよりも長くできれば、図１８に示すスリット６５６ｃ、１８ｂ、１８ｃとは異なるスリットを形成しても良い。 As long as the length of the first current path can be made longer than the length of the second current path, a slit different from the slits 656c, 18b, and 18c shown in FIG. 18 may be formed.
実施の形態１０．
　図１９は、本発明の実施の形態１０に係る半導体装置が備える主電極７００の斜視図である。連結部２０６の第１電極部２０２側には開口２０６ａが形成されている。本体部１８の第１電極部２０２側の部分には開口１８ｄが形成されている。開口１８ｄは、本体部１８の第１電極部２０２側、かつ本体部１８の下部に形成することが好ましい。 Embodiment 10 FIG.
FIG. 19 is a perspective view of main electrode 700 provided in the semiconductor device according to Embodiment 10 of the present invention. An opening 206 a is formed on the first electrode portion 202 side of the connecting portion 206. An opening 18d is formed in a portion of the main body portion 18 on the first electrode portion 202 side. The opening 18 d is preferably formed on the first electrode portion 202 side of the main body 18 and on the lower portion of the main body 18.
　電流経路の幅が狭いほどその電流経路のインダクタンスが増加する。開口２０６ａと開口１８ｄは、主として第１電流経路の幅を狭めるものである。そのため、本体部１８からの磁界の影響を排除したときの、第１電流経路のインダクタンスは第２電流経路のインダクタンスより大きい。従って、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 ¡The narrower the current path, the greater the inductance of the current path. The opening 206a and the opening 18d mainly narrow the width of the first current path. Therefore, the inductance of the first current path when the influence of the magnetic field from the main body 18 is eliminated is larger than the inductance of the second current path. Accordingly, the inductance of the first current path is reduced by the magnetic field from the reverse current section 18a, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
　連結部と本体部の両方に開口を形成せず、連結部２０６の第１電極部側、又は本体部の第１電極部側の部分に開口を形成しても良い。 The opening may be formed in the first electrode portion side of the connecting portion 206 or the first electrode portion side of the main body portion without forming the opening in both the connecting portion and the main body portion.
実施の形態１１．
　図２０は、本発明の実施の形態１１に係る半導体装置が備える主電極７５０の斜視図である。本体部１８の第１電極部２０２側の部分には第１電極部２０２と平行に伸びるスリット１８ｅが形成されている。スリット１８ｅにより、殆ど電流が流れない非通電部１８ｆが形成されている。非通電部１８ｆを形成することにより、第１電極部２０２から逆電流部１８ａまでの距離を、非通電部が形成されない場合の第１電極部２０２から逆電流部までの距離より長くすることができる。また、第１電極部２０２から逆電流部１８ａまでの距離は、第２電極部２０４から第２電極部２０４の上方の本体部１８までの距離より長い。 Embodiment 11 FIG.
FIG. 20 is a perspective view of main electrode 750 provided in the semiconductor device according to Embodiment 11 of the present invention. A slit 18e extending in parallel with the first electrode portion 202 is formed in a portion of the main body portion 18 on the first electrode portion 202 side. The slit 18e forms a non-energized portion 18f through which almost no current flows. By forming the non-energized part 18f, the distance from the first electrode part 202 to the reverse current part 18a can be made longer than the distance from the first electrode part 202 to the reverse current part when the non-conductive part is not formed. it can. Further, the distance from the first electrode portion 202 to the reverse current portion 18 a is longer than the distance from the second electrode portion 204 to the main body portion 18 above the second electrode portion 204.
　スリット１８ｅにより逆電流部１８ａと第１電極部２０２の距離が大きくなるので、逆電流部１８ａからの磁界による第１電極部２０２のインダクタンスへの影響を抑制できる。また、スリット１８ｅが形成されたことでスリット１８ｅが形成されない場合よりも第１電流経路と第２電流経路は長くなるので、第１電流経路と第２電流経路のインダクタンスが増加する。従って、逆電流部が第１電極部のインダクタンスに与える影響は更に低下する。よって、第１電流経路と第２電流経路のインダクタンスを均一にできる。 Since the distance between the reverse current portion 18a and the first electrode portion 202 is increased by the slit 18e, the influence of the magnetic field from the reverse current portion 18a on the inductance of the first electrode portion 202 can be suppressed. In addition, since the slit 18e is formed, the first current path and the second current path are longer than when the slit 18e is not formed, so that the inductance of the first current path and the second current path is increased. Accordingly, the influence of the reverse current portion on the inductance of the first electrode portion is further reduced. Therefore, the inductance of the first current path and the second current path can be made uniform.
　図２１は、変形例に係る主電極の斜視図である。スリット１８ｇは第１電極部２０２の直上のみに形成されている。スリット１８ｇにより、殆ど電流が流れない非通電部１８ｈが形成されている。これにより逆電流部１８ａは第１電極部２０２と大きく離れ、第１電極部のインダクタンスに殆ど影響を与えない。また、スリット１８ｇは前述のスリット１８ｅより短いので、第１電流経路の長さと第２電流経路の長さを短くできる。 FIG. 21 is a perspective view of a main electrode according to a modification. The slit 18g is formed only directly above the first electrode portion 202. The slit 18g forms a non-energized portion 18h through which almost no current flows. As a result, the reverse current portion 18a is greatly separated from the first electrode portion 202 and hardly affects the inductance of the first electrode portion. Moreover, since the slit 18g is shorter than the slit 18e, the length of the first current path and the length of the second current path can be shortened.
　本体部のスリットは第１電極部２０２と平行方向に形成しなくてもよい。スリットを本体部の第１電極部側に形成し、スリットの上方に逆電流部が位置するようにすることで逆電流部を第１電極部から離すことができる。この効果が得られる限り、スリットの形状は限定されない。 The slit of the main body portion does not have to be formed in a direction parallel to the first electrode portion 202. The reverse current portion can be separated from the first electrode portion by forming the slit on the first electrode portion side of the main body portion and positioning the reverse current portion above the slit. As long as this effect is obtained, the shape of the slit is not limited.
実施の形態１２．
　図２２は、本発明の実施の形態１２に係る半導体装置が備える主電極８５０の斜視図である。第１電極部２０２から逆電流部１８ａまでの距離ｙ１は、第２電極部２０４から第２電極部２０４の上方の本体部１８までの距離ｙ２より長い。 Embodiment 12 FIG.
FIG. 22 is a perspective view of main electrode 850 provided in the semiconductor device according to Embodiment 12 of the present invention. A distance y1 from the first electrode portion 202 to the reverse current portion 18a is longer than a distance y2 from the second electrode portion 204 to the main body portion 18 above the second electrode portion 204.
　逆電流部１８ａは第１電極部２０２と大きく離れ、第１電極部２０２のインダクタンスに殆ど影響を与えない。従って、第１電流経路のインダクタンスと第２電流経路のインダクタンスを均一にすることができる。 The reverse current portion 18a is far away from the first electrode portion 202 and hardly affects the inductance of the first electrode portion 202. Therefore, the inductance of the first current path and the inductance of the second current path can be made uniform.
実施の形態１３．
　図２３は、本発明の実施の形態１３に係る半導体装置が備える主電極２００、９００の斜視図である。主電極２００は図７に示す比較例の主電極２００である。主電極２００は第１主電極と称する。第１主電極はエミッタ電極として機能する。 Embodiment 13 FIG.
FIG. 23 is a perspective view of main electrodes 200 and 900 provided in the semiconductor device according to Embodiment 13 of the present invention. The main electrode 200 is the main electrode 200 of the comparative example shown in FIG. The main electrode 200 is referred to as a first main electrode. The first main electrode functions as an emitter electrode.
　第２主電極９００はコレクタ電極として機能する。第１主電極と第２主電極９００は、それぞれが第１半導体チップと第２半導体チップに電気的に接続される。第２主電極９００は一端９０２ａが第１半導体チップと電気的に接続される第３電極部９０２を備えている。第２主電極９００は一端９０４ａが第２半導体チップと電気的に接続される第４電極部９０４を備えている。第３電極部９０２の他端９０２ｂと第４電極部９０４の他端９０４ｂは連結部９０６に接続されている。連結部９０６は本体部９０８に接続されている。本体部９０８の第４電極部９０４側には外部接続部９１０が接続されている。 The second main electrode 900 functions as a collector electrode. The first main electrode and the second main electrode 900 are electrically connected to the first semiconductor chip and the second semiconductor chip, respectively. The second main electrode 900 includes a third electrode portion 902 whose one end 902a is electrically connected to the first semiconductor chip. The second main electrode 900 includes a fourth electrode portion 904 whose one end 904a is electrically connected to the second semiconductor chip. The other end 902 b of the third electrode portion 902 and the other end 904 b of the fourth electrode portion 904 are connected to the connecting portion 906. The connecting portion 906 is connected to the main body portion 908. An external connection portion 910 is connected to the main body portion 908 on the fourth electrode portion 904 side.
　第２電極部２０４を流れる電流の向きは、第４電極部９０４を流れる電流の向きと反対方向である。第１電極部２０２を流れる電流の向きは、第３電極部９０２を流れる電流の向きと反対方向である。第２電極部２０４から第４電極部９０４までの距離は、第１電極部２０２から第３電極部９０２までの距離より小さい。 The direction of the current flowing through the second electrode unit 204 is opposite to the direction of the current flowing through the fourth electrode unit 904. The direction of current flowing through the first electrode unit 202 is opposite to the direction of current flowing through the third electrode unit 902. The distance from the second electrode part 204 to the fourth electrode part 904 is smaller than the distance from the first electrode part 202 to the third electrode part 902.
　従って、第４電極部９０４で生じた磁界による第２電極部２０４のインダクタンス低下量は、第３電極部９０２で生じた磁界による第１電極部２０２のインダクタンス低下量より大きい。つまり、本体部１８からの磁界の影響を排除したときの第２電流経路のインダクタンスは第１電流経路のインダクタンスより小さい。よって、第１電極部２０２のインダクタンスが逆電流部１８ａからの磁界によって低下することにより、第１電流経路のインダクタンスと、第２電流経路のインダクタンスを均一にすることができる。 Therefore, the amount of inductance decrease of the second electrode unit 204 due to the magnetic field generated in the fourth electrode unit 904 is larger than the amount of inductance decrease of the first electrode unit 202 due to the magnetic field generated in the third electrode unit 902. That is, the inductance of the second current path when the influence of the magnetic field from the main body 18 is excluded is smaller than the inductance of the first current path. Therefore, when the inductance of the first electrode unit 202 is reduced by the magnetic field from the reverse current unit 18a, the inductance of the first current path and the inductance of the second current path can be made uniform.
実施の形態１４．
　図２４は、本発明の実施の形態１４に係る半導体装置が備える主電極２００、９５０の斜視図である。主電極２００を第１主電極と称する。第１主電極は第１半導体チップと第２半導体チップのエミッタ電極として機能する。第２主電極９５０は第１半導体チップと第２半導体チップのコレクタ電極として機能する。第２主電極９５０は、第３電極部９５２と第４電極部９５４を有している。連結部９５６は、第３電極部９５２の他端と第４電極部９５４の他端を接続している。連結部９５６は本体部９５８に接続されている。本体部９５８の第４電極部９５４側に外部接続部９６０が接続されている。 Embodiment 14 FIG.
FIG. 24 is a perspective view of main electrodes 200 and 950 included in the semiconductor device according to Embodiment 14 of the present invention. The main electrode 200 is referred to as a first main electrode. The first main electrode functions as an emitter electrode of the first semiconductor chip and the second semiconductor chip. The second main electrode 950 functions as a collector electrode for the first semiconductor chip and the second semiconductor chip. The second main electrode 950 has a third electrode portion 952 and a fourth electrode portion 954. The connecting portion 956 connects the other end of the third electrode portion 952 and the other end of the fourth electrode portion 954. The connecting portion 956 is connected to the main body portion 958. An external connection portion 960 is connected to the fourth electrode portion 954 side of the main body portion 958.
　第２主電極９５０は、第１電極部２０２と同一方向の電流が流れる第５電極部９５８ａを有している。従って、逆電流部１８ａからの磁界は第１電極部２０２のインダクタンスを低下させるが、第５電極部９５８ａからの磁界は第１電極部２０２のインダクタンスを大きくする。結局、第１電極部２０２のインダクタンスは実質的に外部からの影響を受けないので、第１電流経路のインダクタンスと第２電流経路のインダクタンスを均一にできる。 The second main electrode 950 has a fifth electrode portion 958a through which a current in the same direction as the first electrode portion 202 flows. Accordingly, the magnetic field from the reverse current portion 18a decreases the inductance of the first electrode portion 202, but the magnetic field from the fifth electrode portion 958a increases the inductance of the first electrode portion 202. Eventually, the inductance of the first electrode unit 202 is not substantially affected by the outside, so that the inductance of the first current path and the inductance of the second current path can be made uniform.
　本発明の実施の形態１４に係る第２主電極９５０は、第２主電極９５０を流れる電流によって生じる磁界が第１電極部２０２のインダクタンスを増加させるように配置される。重要な点は、第２主電極９５０からの磁界による第２電極部２０４のインダクタンス増加量よりも、第２主電極９５０からの磁界による第１電極部２０２のインダクタンス増加量を大きくすることである。 The second main electrode 950 according to the fourteenth embodiment of the present invention is arranged so that the magnetic field generated by the current flowing through the second main electrode 950 increases the inductance of the first electrode unit 202. The important point is that the inductance increase amount of the first electrode portion 202 due to the magnetic field from the second main electrode 950 is made larger than the inductance increase amount of the second electrode portion 204 due to the magnetic field from the second main electrode 950. .
　前述の実施の形態１３に係る第２主電極９００は、第２主電極９００を流れる電流によって生じる磁界が第２電極部２０４のインダクタンスを低下させるように配置される。重要な点は、第２主電極９００からの磁界による第１電極部２０２のインダクタンス低下量よりも、第２主電極９００からの磁界による第２電極部２０４のインダクタンス低下量を大きくすることである。 The second main electrode 900 according to the above-described thirteenth embodiment is arranged such that the magnetic field generated by the current flowing through the second main electrode 900 reduces the inductance of the second electrode unit 204. The important point is to increase the inductance reduction amount of the second electrode portion 204 due to the magnetic field from the second main electrode 900, rather than the inductance reduction amount of the first electrode portion 202 due to the magnetic field from the second main electrode 900. .
　実施の形態１３、１４は、第２主電極からの磁界の影響を排除したときの第１電流経路のインダクタンスと第２電流経路のインダクタンスが不均一である点（第１の特徴）で一致する。また、実施の形態１３、１４は、この不均一を第２主電極からの磁界によって解消する点（第２の特徴）で一致する。第１の特徴と第２の特徴を有する限り、第１主電極と第２主電極の形状及び配置は様々な変形が可能である。 The thirteenth and fourteenth embodiments coincide with each other in that the inductance of the first current path and the inductance of the second current path when the influence of the magnetic field from the second main electrode is excluded (first characteristic). . The thirteenth and fourteenth embodiments are identical in that this non-uniformity is eliminated by the magnetic field from the second main electrode (second feature). As long as it has the 1st characteristic and the 2nd characteristic, various deformation | transformation is possible for the shape and arrangement | positioning of a 1st main electrode and a 2nd main electrode.
　なお、上記の各実施の形態に係る半導体装置の特徴を適宜に組み合わせて、本発明の効果を高めても良い。 Note that the advantages of the present invention may be enhanced by appropriately combining the features of the semiconductor devices according to the above embodiments.
　１０　主電極、　１２　第１電極部、　１２ａ　一端、　１２ｂ　他端、　１４　第２電極部、　１４ａ　一端、　１４ｂ　他端、　１６　連結部、　１８　本体部、　１８ａ　逆電流部、　１８ｂ,１８ｃ,１８ｅ,１８ｇ　スリット、　１８ｄ　開口、　１８ｆ,１８ｈ　非通電部、　２０　外部接続部、　５０　第１絶縁基板、　５２　第２絶縁基板、　６０,６２,６４,７０,７２,７４,９２　金属パターン、　６６ａ,７６ａ　ダイオード、　６６ｂ,７６ｂ　ＩＧＢＴ、　６６　第１半導体チップ、　７６　第２半導体チップ、　８０　別の主電極、　９０　絶縁基板、　９４　抵抗部、　１００　ベース板、　１０２　ケース、　１０４　主電極、　１０６　別の主電極、　１０８　補助端子、　１１２　封止材、　１１４　制御基板、　２００,２５０,３００,３５０,４００,４５０,５００,５５０,６００,６５０、７００,７５０,８００,８５０　主電極、　２０２,２５２,３０２　第１電極部、　２０４,２５４,３５４,４０４,４５４　第２電極部、　２０６　連結部、　２０６ａ　開口、　５０２　被覆材料、　５５６　補助連結部、　６５６　連結部、　６００ａ　薄い連結部、　６００ｂ　厚い連結部、　６５６ａ　第１連結部、　６５６ｂ　第２連結部、　９００,９５０　第２主電極、　９０２,９５２　第３電極部、　９０４,９５４　第４電極部、　９５８ａ　第５電極部 10 main electrode, 12 first electrode part, 12a one end, 12b other end, 14 second electrode part, 14a one end, 14b other end, 16 connecting part, 18 body part, 18a reverse current part, 18b, 18c, 18e, 18g Slit, 18d opening, 18f, 18h non-energized part, 20 external connection part, 50 first insulating substrate, 52 second insulating substrate, 60, 62, 64, 70, 72, 74, 92 metal pattern, 66a, 76a diode, 66b, 76b IGBT, 66 first semiconductor chip, 76 second semiconductor chip, 80 different main electrode, 90 insulating substrate, 94 resistor, 100 base plate, 102 case, 104 main electrode, 106 different main electrode, 108 auxiliary Terminal, 112 sealing material, 114 control board, 200,250,300,350,400,450,500,550,600,650, 700,750,800,850 Main electrode, 202,252,302 First electrode part, 204,254,354,404,454 No. 2-electrode part, 206 connecting part, 206a opening, 502 coating material, 556 auxiliary connecting part, 656 connecting part, 600a thin connecting part, 600b thick connecting part, 656a first connecting part, 656b second connecting part, 900,950th 2 main electrodes, 902,952 third electrode part, 904,954 fourth electrode part, 958a fifth electrode part

Claims (13)

  1. 　第１半導体チップと、
    　第２半導体チップと、
    　前記第１半導体チップと前記第２半導体チップに電気的に接続された主電極と、を備え、
    　前記主電極は、
    　一端が前記第１半導体チップと電気的に接続された第１電極部と、
    　一端が前記第２半導体チップと電気的に接続された第２電極部と、
    　前記第１電極部の他端と前記第２電極部の他端を接続する連結部と、
    　前記連結部と接続された本体部と、
    　前記本体部の前記第１電極部側の部分と接続された外部接続部と、を備え、
    　前記本体部からの磁界の影響を排除したときの、前記第１電極部の一端から前記外部接続部までの電流経路のインダクタンスは、前記第２電極部の一端から前記外部接続部までの電流経路のインダクタンスより大きいことを特徴とする半導体装置。     A first semiconductor chip;
    A second semiconductor chip;
    A main electrode electrically connected to the first semiconductor chip and the second semiconductor chip,
    The main electrode is
    A first electrode part having one end electrically connected to the first semiconductor chip;
    A second electrode part having one end electrically connected to the second semiconductor chip;
    A connecting portion connecting the other end of the first electrode portion and the other end of the second electrode portion;
    A main body connected to the connecting portion;
    An external connection portion connected to a portion of the main body portion on the first electrode portion side,
    The inductance of the current path from one end of the first electrode part to the external connection part when the influence of the magnetic field from the main body part is eliminated is the current path from one end of the second electrode part to the external connection part A semiconductor device characterized by being larger than the inductance.
  2. 　前記第１電極部の一端から他端までの長さは、前記第２電極部の一端から他端までの長さより長いことを特徴とする請求項１に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein a length from one end to the other end of the first electrode portion is longer than a length from one end to the other end of the second electrode portion.
  3. 　前記連結部の長さが前記第２電極部の長さより長いことを特徴とする請求項２に記載の半導体装置。 3. The semiconductor device according to claim 2, wherein a length of the connecting portion is longer than a length of the second electrode portion.
  4. 　前記第２電極部は、前記第１電極部より厚く形成されたことを特徴とする請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein the second electrode portion is formed thicker than the first electrode portion.
  5. 　前記第２電極部は、前記第１電極部よりも幅が広いことを特徴とする請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein the second electrode portion is wider than the first electrode portion.
  6. 　前記第１電極部に塗布又は取り付けられた、空気より透磁率の高い被覆材料を備えたことを特徴とする請求項１に記載の半導体装置。 2. The semiconductor device according to claim 1, further comprising a coating material applied or attached to the first electrode portion and having a higher magnetic permeability than air.
  7. 　前記第２電極部の一部と前記本体部を接続する補助連結部を備えたことを特徴とする請求項１に記載の半導体装置。 The semiconductor device according to claim 1, further comprising an auxiliary connecting portion that connects a part of the second electrode portion and the main body portion.
  8. 　前記連結部は、前記第１電極部の他端と接続される部分より、前記第２電極部の他端と接続される部分の方が厚く形成されたことを特徴とする請求項１に記載の半導体装置。 2. The connection portion according to claim 1, wherein a portion connected to the other end of the second electrode portion is formed thicker than a portion connected to the other end of the first electrode portion. Semiconductor device.
  9. 　前記連結部と前記本体部は、前記第１電極部の一端から前記外部接続部までの電流経路長が、前記第２電極部の一端から前記外部接続部までの電流経路長より長くなるように形成されたスリットを有することを特徴とする請求項１に記載の半導体装置。 The connection part and the main body part have a current path length from one end of the first electrode part to the external connection part longer than a current path length from one end of the second electrode part to the external connection part. The semiconductor device according to claim 1, further comprising a formed slit.
  10. 　前記連結部の前記第１電極部側、又は前記本体部の前記第１電極部側の部分には開口が形成されたことを特徴とする請求項１に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein an opening is formed in a portion of the connecting portion on the first electrode portion side or a portion of the main body portion on the first electrode portion side.
  11. 　第１半導体チップと、
    　第２半導体チップと、
    　前記第１半導体チップと前記第２半導体チップに電気的に接続された主電極と、を備え、
    　前記主電極は、
    　一端が前記第１半導体チップと電気的に接続された第１電極部と、
    　一端が前記第２半導体チップと電気的に接続された第２電極部と、
    　前記第１電極部の他端と前記第２電極部の他端を接続する連結部と、
    　前記連結部と接続された本体部と、
    　前記本体部の前記第１電極部側の部分と接続された外部接続部と、を備え、
    　前記第１電極部から、前記本体部のうち前記第１電極部の上方において前記第１電極部と反対方向の電流が流れる部分である逆電流部までの距離は、前記第２電極部から前記第２電極部の上方の前記本体部までの距離より長いことを特徴とする半導体装置。     A first semiconductor chip;
    A second semiconductor chip;
    A main electrode electrically connected to the first semiconductor chip and the second semiconductor chip,
    The main electrode is
    A first electrode part having one end electrically connected to the first semiconductor chip;
    A second electrode part having one end electrically connected to the second semiconductor chip;
    A connecting portion connecting the other end of the first electrode portion and the other end of the second electrode portion;
    A main body connected to the connecting portion;
    An external connection portion connected to a portion of the main body portion on the first electrode portion side,
    The distance from the first electrode part to the reverse current part, which is the part of the main body part above which the current in the direction opposite to the first electrode part flows, is above the first electrode part. A semiconductor device characterized by being longer than a distance to the main body above the second electrode part.
  12. 　前記本体部の前記第１電極部側にはスリットが形成され、
    　前記スリットの上方に前記逆電流部が位置することを特徴とする請求項１１に記載の半導体装置。     A slit is formed on the first electrode part side of the main body part,
    The semiconductor device according to claim 11, wherein the reverse current portion is located above the slit.
  13. 　第１半導体チップと、
    　第２半導体チップと、
    　前記第１半導体チップと前記第２半導体チップに電気的に接続された第１主電極と、
    　前記第１半導体チップと前記第２半導体チップに電気的に接続された第２主電極と、を備え、
    　前記第１主電極は、
    　一端が前記第１半導体チップと電気的に接続された第１電極部と、
    　一端が前記第２半導体チップと電気的に接続された第２電極部と、
    　前記第１電極部の他端と前記第２電極部の他端を接続する連結部と、
    　前記連結部と接続された本体部と、
    　前記本体部の前記第１電極部側の部分と接続された外部接続部と、を備え、
    　前記第２主電極からの磁界の影響を排除したときの、前記第１電極部の一端から前記外部接続部までの電流経路のインダクタンスと、前記第２電極部の一端から前記外部接続部までの電流経路のインダクタンスは不均一であり、
    　前記第２主電極からの磁界によって、前記第１電極部の一端から前記外部接続部までの電流経路のインダクタンスと、前記第２電極部の一端から前記外部接続部までの電流経路のインダクタンスを均一にすることを特徴とする半導体装置。     A first semiconductor chip;
    A second semiconductor chip;
    A first main electrode electrically connected to the first semiconductor chip and the second semiconductor chip;
    A second main electrode electrically connected to the first semiconductor chip and the second semiconductor chip;
    The first main electrode is
    A first electrode part having one end electrically connected to the first semiconductor chip;
    A second electrode part having one end electrically connected to the second semiconductor chip;
    A connecting portion connecting the other end of the first electrode portion and the other end of the second electrode portion;
    A main body connected to the connecting portion;
    An external connection portion connected to a portion of the main body portion on the first electrode portion side,
    When the influence of the magnetic field from the second main electrode is eliminated, the inductance of the current path from one end of the first electrode part to the external connection part, and from one end of the second electrode part to the external connection part The current path inductance is uneven,
    Due to the magnetic field from the second main electrode, the inductance of the current path from one end of the first electrode part to the external connection part and the inductance of the current path from one end of the second electrode part to the external connection part are made uniform. A semiconductor device characterized by the above.
PCT/JP2013/065064 2013-05-30 2013-05-30 Semiconductor device WO2014192118A1 (en)

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