WO2014183339A1 - 基板清洗装置、系统及方法 - Google Patents

基板清洗装置、系统及方法 Download PDF

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Publication number
WO2014183339A1
WO2014183339A1 PCT/CN2013/080748 CN2013080748W WO2014183339A1 WO 2014183339 A1 WO2014183339 A1 WO 2014183339A1 CN 2013080748 W CN2013080748 W CN 2013080748W WO 2014183339 A1 WO2014183339 A1 WO 2014183339A1
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WO
WIPO (PCT)
Prior art keywords
substrate
nozzles
water
heated water
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/080748
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English (en)
French (fr)
Inventor
张毅
翁铭廷
郭知广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Publication of WO2014183339A1 publication Critical patent/WO2014183339A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • Substrate cleaning device system and method
  • Embodiments of the invention relate to a substrate cleaning apparatus, system, and method. Background technique
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • Oxide Thin Film Transistor has the advantages of ultra-thin, light weight, low power consumption, etc., and can be used not only for manufacturing liquid crystal display panels, but also as an organic light-emitting diode for a new generation of organic light-emitting display panels (Organic).
  • OLED Light-Emitting Diode
  • the application of display devices offers the possibility. This is because the OLED display device is more colorful and clearer than the existing TFT-LCD.
  • the cleaning process is an indispensable part of the substrate fabrication. Cleaning is a process technique that removes substrate contamination or particles in the process to improve product yield. By effectively cleaning the substrate, the adhesion between the layers can be improved.
  • the wet cleaning method currently used mainly in LCD and OLED processes is room temperature water washing. Washing is divided into pure water washing and water and gas two-fluid mixing and washing. The common principle of both is through the impact force of high-pressure water flow or high-pressure water-gas two-fluid or the impact of gas bubble blasting. However, the ability to remove fine d and organic foreign matter on the substrate is very limited, so it is easy. Causes the product's non-performing rate to increase the strength. Summary of the invention
  • Embodiments of the present invention provide a substrate cleaning apparatus, system, and method for improving the ability to remove fine d and organic foreign matter attached to a substrate, thereby improving product yield.
  • a substrate cleaning apparatus comprising: a water tank, A water pump connected to the water tank, a plurality of nozzles connected to the water pump, and a heater disposed in the substrate cleaning device to heat the fluid before the fluid flows out of the nozzle.
  • the heater may include a first heater disposed at the plurality of nozzles to heat an outflow fluid of the plurality of nozzles.
  • the outflow fluid of the plurality of nozzles may be sprayed on the substrate to be cleaned in transit
  • the plurality of nozzles may include at least one set of pre-spray nozzles and at least one set of hedging nozzles, each The set of the punching nozzles includes oppositely disposed two sets of spray nozzles opposite to each other, and the at least one set of pre-spray nozzles may be disposed upstream of the at least one set of the punching nozzles in the substrate conveying direction.
  • the heater may include a second heater disposed in the water tank to heat water in the water tank.
  • the substrate cleaning apparatus may further include a gas pump connected to the plurality of nozzles, the heater including a communication line disposed on the air pump and the plurality of nozzles to perform gas Heated gas heater.
  • the substrate cleaning apparatus may further include a pre-heater configured to pre-heat the substrate to be cleaned, the pre-heater being disposed upstream of the plurality of nozzles in a substrate transfer direction.
  • the preheater may be a light heater or a hot air heater.
  • a substrate cleaning system comprising: any one of the substrate cleaning devices described above; a temperature sensor disposed on a water outlet side of the nozzle, configured to detect an outflow of the nozzle a temperature information of the fluid; and a control device coupled to the temperature sensor signal, configured to control the heater to heat when the temperature of the outflow fluid of the nozzle is less than a set first temperature threshold, and to flow out of the nozzle When the temperature is not less than the set first temperature threshold, the control heater stops heating.
  • a substrate cleaning method comprising: spraying cleaning a substrate with heated water or a heated water-air mixed fluid.
  • the step of performing the spray cleaning on the substrate by using the heated water or the heated water-air mixed fluid may include: performing the cleaned substrate on the cleaned substrate by using the heated water or the heated water-air mixed fluid. Pre-spraying; and using the heated water or the heated water-air mixed fluid to perform a counter-spraying of the substrate to be cleaned.
  • the substrate cleaning method may further include: preheating the substrate to about 40 before performing the spray cleaning on the substrate to be cleaned by using heated water or a heated water-air mixed fluid. ⁇ 120 °C.
  • the substrate may be preheated to about 100 to 120 ° C before the spray cleaning of the substrate to be cleaned by using heated water or a heated water-air mixed fluid.
  • the substrate cleaning method of any one of the above methods may further include: cooling the substrate after performing the spray cleaning on the substrate to be cleaned by using heated water or a heated water-air mixed fluid. To the set temperature.
  • the temperature of the heated water or the heated water-air mixed fluid may be about 40 to 100 °C.
  • FIG. 1 is a schematic structural view of a substrate cleaning apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing a nozzle arrangement structure of a substrate cleaning apparatus according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a preheater distribution of a substrate cleaning apparatus according to an embodiment of the present invention
  • FIG. 4 is a substrate according to an embodiment of the present invention. Schematic diagram of the workflow of the cleaning system.
  • Connected or “connected” and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
  • "Upstream”, “downstream”, etc. are only used to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationship may also change accordingly.
  • embodiments of the present invention provide a substrate cleaning apparatus, system, and method.
  • the temperature of the fluid for cleaning the substrate can be increased, and the molecular motion in the fluid is intensified, thereby improving the solubility of the organic foreign matter in the fluid, thereby increasing the probability of removal of the organic foreign matter.
  • An embodiment of the substrate cleaning method of the present invention comprises: spraying and cleaning the substrate with heated water or a heated water-mixed fluid.
  • the substrate may be spray-cleaned with hot water, or the substrate may be spray-cleaned with a mixed fluid of hot water and hot gas.
  • the water temperature increases, the movement of water molecules increases, which increases the solubility of organic foreign matter in water, thereby increasing the probability of organic foreign matter removal.
  • the cleaning time is shortened relative to the existing normal temperature cleaning time, thereby improving the production efficiency.
  • the temperature of the heated water or the heated water-gas mixture fluid is about 25 to 100 ° C.
  • the temperature of the heated water or the heated water-gas mixture fluid is about 40 ⁇ 100 °C.
  • the temperature of the heated water or the heated water-gas mixture fluid may vary within a range of about 25 to 100 ° C according to the needs of the cleaning process.
  • the temperature may be about 25 °C, 30 ° C, 40 ° C, 50 ° C, 60 ° C, 70 ° C, 80 ° C, 90 ° C or 100 ° C, the temperature can also be a small range, such as about 40 ⁇ 45 ° C , 80 ⁇ 83 °C.
  • the step of performing spray cleaning on the substrate by using the heated water or the heated water-air mixed fluid comprises: pre-preparing the substrate to be cleaned by using heated water or heated water-air mixed fluid Spraying; Thereafter, the substrate is subjected to a counter-spraying using heated water or a heated mixed gas.
  • the substrate is pre-sprayed by using the heated water or the heated water-gas mixed fluid, so that a complete high-temperature water film can be formed on the surface of the substrate to complete the covering and wetting of the substrate;
  • the counter-spraying of the substrate can achieve fine cleaning of fine organic foreign matter remaining on the uneven position of the cleaning substrate, thereby improving the cleanliness of cleaning and further reducing the defect rate of the product.
  • the method before the spray cleaning of the substrate to be cleaned by using the heated water or the heated water-air mixed fluid, the method further comprises: preheating the substrate to about 25 to 120 °C.
  • the molecular activity of the organic polymer foreign matter can be increased, and the gradient of the water temperature at the nozzle and the water temperature reaching the surface of the substrate during the post-spray cleaning can be reduced, thereby further improving the organic The removal rate of foreign matter.
  • Preheating the substrate can be used to heat the substrate during illumination (such as infrared heat source, heating lamp, etc.) or other heat source (such as hot air) during substrate transfer.
  • the temperature of the substrate is controlled at about 25 ⁇ 120 °C. .
  • the method may further include: preheating the substrate to about 40 to 120 ° C, for example, preheating the substrate. Up to about 100 ⁇ 120 °C.
  • the preheating temperature of the substrate is generally higher than the water temperature during the post-spray cleaning. This is because the substrate temperature may be lowered when the substrate is transferred to the position of the spray cleaning, and the substrate temperature is slightly higher than the water temperature of the spray cleaning. It is also conducive to the evaporation of spray water.
  • the preheating temperature of the substrate can be adjusted according to the needs of the cleaning process.
  • the substrate can be heated to about 40 ° C, 50 ° C, 60 ° C, 70 ° C, 80 ° C, 90. °C, 100 ° C, 110 ° C or 120 ° C.
  • the higher the heating temperature of the substrate the higher the molecular activity of the organic foreign matter, and the easier it is to be washed by the hot water or water-air mixed fluid.
  • the method further comprises: cooling the substrate to a set temperature.
  • the substrate after cleaning needs to be reduced to a suitable temperature, which is determined according to the requirements of the cleaning process, and may also be determined according to the temperature requirements of the subsequent process of the cleaning process. For example, it is generally required to lower the temperature of the substrate to a normal temperature.
  • an embodiment of the present invention provides a substrate cleaning apparatus including: a water tank 1, a water pump 2 connected to the water tank 1, and a plurality of nozzles 3 connected to the water pump 2.
  • the effluent fluid (which may be a water or a water-gas mixed fluid, and the lower cylinder is referred to as effluent) of the plurality of nozzles 3 is sprayed on the substrate 5.
  • a heater configured to heat the fluid before the fluid flows out of the plurality of nozzles 3 is disposed in the substrate cleaning device.
  • two water tanks 1 are illustrated in Figure 1, however, those skilled in the art will appreciate that Depending on the actual needs, you can also set up a water tank, or more than two water tanks.
  • a heater is provided in the substrate cleaning apparatus, the heater being configured to heat the substrate or to heat the fluid in the substrate cleaning apparatus for cleaning the substrate, preferably a water or a water-air mixed fluid.
  • the description is as follows. Due to the action of the heater, the temperature of the substrate or the water used for cleaning the substrate is increased, so that the molecular activity of the organic foreign matter on the substrate is increased or the movement of the water molecules is intensified, the water solubility is improved, and the fine organic foreign matter is dissolved in the water. Thereby, the fine organic foreign matter can be effectively removed, thereby improving the yield of the product.
  • the water pump may be a conventional water pump or a high pressure water pump.
  • the substrate may be a stationary substrate (requires nozzle movement) or a substrate in transit.
  • the conveying device 6 transports the substrate 5 to the cleaning process position, and is also in the conveying state during the cleaning process, and the conveying device 6 may be a roller conveyor or a conveyor belt.
  • the heater includes a first heater 12 disposed at the plurality of nozzles 3 to heat the effluent of the plurality of nozzles, as shown in FIG.
  • the first heater 12 since the first heater 12 is provided at the nozzle 3, it can be used to heat the nozzle
  • the effluent of 3 causes the water temperature of the nozzle 3 to increase, and the movement of the water molecules is intensified, so that the water solubility is improved, and the fine organic foreign matter can be dissolved in the water, thereby effectively removing fine organic foreign matter, thereby improving the yield of the product.
  • the water discharged from the plurality of nozzles 3 is sprayed on the substrate 5 being cleaned, the plurality of nozzles including at least one set of pre-spray nozzles 31 and at least one set of counter-nozzles 32.
  • Each set of the hedging nozzles 32 includes oppositely disposed nozzles in which the two sets of spray directions are opposed to each other.
  • the at least one set of pre-spray nozzles 31 are disposed upstream of the at least one set of hedging nozzles 32 in the substrate transport direction.
  • the expressions here and below are defined as follows: In the substrate transport direction, the position where the substrate passes first is upstream, and the position after passing is downstream.
  • the substrate 5 is conveyed by the transfer of the transport device 6.
  • a set of pre-spray nozzles 31 are first provided to pre-spray the surface of the substrate 5; at least one set of hedges is provided after the pre-spray nozzles 31.
  • the nozzles 32 are sprayable with respect to the conveying direction and the reverse conveying direction, respectively, and are particularly thorough for the foreign matter cleaning in the conveying direction and the reverse conveying direction, and can be used for cleaning fine foreign matter at the uneven position on the surface of the substrate.
  • the pair of nozzles 32 may be a group, as shown in FIG.
  • the hedging nozzle 32 is divided into two columns of nozzle A and nozzle B, one of which The spray direction of the column nozzle A is opposite to the substrate transfer direction, and the spray direction of the other row of nozzles B coincides with the substrate transfer direction.
  • the position of the organic foreign matter at the concave and convex portions of the substrate can be obtained, and according to the position of the organic foreign matter, one row of nozzles A can be controlled to open or one row of nozzles B can be opened, for example, the substrate conveying direction is the front side of the convex portion
  • one row of nozzles A is controlled to be opened, and the spray direction of one row of nozzles A is opposite to the direction in which the substrate is conveyed, and the organic side located at the front side of the protrusions can be washed away.
  • the transfer speed of the substrate is generally about 3600 to 7200 mm/min.
  • the speed of the water flow velocity of the oppositely disposed punching nozzles may be made to coincide with the substrate. Therefore, the conveying speed of the substrate can be appropriately adjusted so that the speed at which the effluent of the two groups of nozzles reaches the substrate is uniform.
  • the heater further includes a second heater 11 disposed in the water tank 1 to heat the water in the water tank 1.
  • the second heater 11 is added to the water tank so that the water entering the water pump is hot water, and the problem that the water temperature caused by the insufficient heating time at the nozzle is still relatively low is avoided.
  • the substrate cleaning apparatus may further include an air pump 4 connected to the plurality of nozzles 3, the heater including a communication line disposed on the air pump 4 and the plurality of nozzles 3 to align the gas The gas heater 13 is heated.
  • a gas passage is added and a gas heater 13 is disposed on the air passage to cause the hot gas and the hot water mixed fluid formed by the hot water to be sprayed from the nozzle to clean the substrate. Due to the impact of the hot air bubbles formed by the mixing of the hot air and the water, the foreign matter adhering to the surface of the substrate is more easily washed away, thereby improving the cleaning ability of the substrate cleaning device to the substrate.
  • the heater in the substrate cleaning apparatus of the embodiment of the present invention, includes a preheater 14 that preheats the substrate, and the preheater 14 is disposed in the plurality of nozzles 3 in the conveying direction of the substrate 5. Upstream.
  • the pre-heater 14 is disposed on the line before the transfer substrate 5 enters the nozzle spray, and the substrate to be cleaned may be irradiated by illumination (for example, an infrared heat source or other heat lamps or the like) or hot air. Preheating in progress.
  • the conveying device 6 can be, for example, a roller table.
  • the preheater 14 is a light heater or a hot air heater.
  • heating of the substrate 5 can be conveniently achieved during the transfer of the substrate 5 by using a light heater or a hot air heater.
  • the embodiment of the invention further provides a substrate cleaning system using the above substrate cleaning device, which comprises:
  • a temperature sensor 7 disposed on the water outlet side of the nozzle and configured to detect the water outlet temperature information of the nozzle; the control device 8 is signally coupled to the temperature sensor 7 and configured to when the nozzle water temperature is less than the set first temperature threshold When the heater is controlled to heat.
  • control device is used to realize automatic control of the spray.
  • the heater is controlled to be heated so that the effluent reaches a suitable temperature for cleaning the substrate.
  • the control device can realize the control function through hardware or the control function through software.
  • the set first temperature threshold may be set according to experience, and the specific value thereof is not limited, and may be adjusted within a suitable range according to the needs of the cleaning process. If the set value of the first temperature threshold is about [25 ° C - 100 ° C], the set first temperature threshold may be about 25 ° C, 40 ° C, 70 ° C, 80 ° C, 90 ° C or 100 ° C.
  • control means 8 controls the heater to stop heating when the outlet water temperature of the nozzle is not less than the set first temperature threshold.
  • the automatic control of the spray is realized by the control device 8.
  • the control device 8 When the water temperature of the nozzle is not less than the set first temperature threshold, the temperature can meet the requirement of cleaning the substrate, and the heater is controlled at this time. Stop heating.
  • a substrate cleaning apparatus as shown in Fig. 1 is included, i.e., the system includes a first heater 12, a second heater 11, a gas heater 13, and an air pump 4.
  • the substrate cleaning device cleans the substrate 5 transported by the transfer device 6.
  • the control flow of the control device 8 will be described below.
  • FIG. 4 it is a schematic diagram of the working process of the substrate cleaning system according to the embodiment of the present invention.
  • the workflow of the substrate cleaning system according to an embodiment of the present invention includes:
  • Step 101 Obtain water temperature information in the water tank
  • Step 102 Determine whether the water temperature in the water tank is less than a set first temperature threshold; if not, execute step 103; if yes, the control device 8 controls the water pump to be turned off, does not supply water, and continues to obtain water temperature information in the water tank (ie, Returning to step 101);
  • Step 103 The control device 8 controls the water pump to be turned on to realize water supply;
  • Step 104 After the water pump is turned on, obtain temperature information of the nozzle water outlet;
  • Step 105 Determine whether the temperature of the nozzle water is less than a set first temperature threshold; If no, go to step 106; if yes, go to step 107;
  • Step 106 Control the first heater 12 to stop heating
  • Step 107 Control the first heater 12 to perform heating
  • Step 108 obtaining heating information of the first heater 12, including feeding back information of the heating by the first heater 12 to the control device 8;
  • Step 109 the control device 8 controls the second heater 11 and the gas heater 13 to perform heating.
  • Embodiments of the present invention also provide a display device including a substrate cleaned by any of the embodiments.
  • the organic foreign matter of the substrate obtained by using the cleaning device, system and method of the embodiment of the invention is obviously reduced, and the yield of the product is greatly improved.
  • the display device may be: a product or a component having any display function such as a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • the substrate cleaning apparatus, system and method of the present invention can effectively remove organic foreign matter remaining on the convex surface of the substrate, thereby improving the yield of the product, and the technical solution of the present invention can effectively save the cleaning time. Improve the production efficiency of the product.

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  • Cleaning By Liquid Or Steam (AREA)

Abstract

公开了一种基板清洗装置。该基板清洗装置包括：水箱（1），与水箱（1）相连的水泵（2），与水泵（2）相连的多个喷嘴（3），多个喷嘴（3）的流出流体喷淋于基板（5），还包括设置于基板清洗装置内的用于在流体流出喷嘴（3）之前对流体进行加热的加热器（11，12）。还公开了一种包括该清洗装置的清洗系统和清洗方法。由于加热器的加热作用，可以提高清洗基板的流体的温度，流体中的分子运动加剧，因此，提高了有机异物在流体中的溶解度，增大了有机异物的去除几率，进而提高了产品的良率。

Description

基板清洗装置、 系统及方法
技术领域
本发明的实施例涉及一种基板清洗装置、 系统及方法。 背景技术
在平板显示装置中， 薄膜晶体管液晶显示器（ Thin Film Transistor Liquid Crystal Display, TFT-LCD )具有体积小、 功耗低、 制造成本相对较低和无辐 射等特点， 在当前的平板显示器市场占据着主导地位。
氧化物薄膜晶体管（ Oxide Thin Film Transistor, OTFT )具有超薄、 重量 轻、 低耗电等优势， 不仅可以用于制造液晶显示面板， 而且还为作为新一代 有机发光显示面板的有机发光二极管 （Organic Light-Emitting Diode, OLED ) 显示装置的应用提供了可能。 这是因为 OLED显示装置较现有的 TFT-LCD, 其色彩更艳丽并且影像更清晰。
在诸如上述显示面板的制造工艺中， 涉及多种有机材料， 特别是高分子 材料， 在制作时都有可能产生碎屑残留在基板上。 因此， 清洗工艺是基板制 作时不可或缺的环节。 清洗是一种事前去除工艺中的基板污染或微粒 ( Particle ) 以提高产品良率的工艺技术。 通过对基板的有效清洗， 可以提高 膜层间的粘附力 （adhesion ) 。
目前在 LCD和 OLED工艺过程中主要使用的湿洗方法为常温水洗。水洗 又分为纯水洗和水气二流体混合洗两种方式。 二者共同的原理都是通过高压 水流或高压水气二流体的沖击力或气体气泡（Bubble )爆破的沖击力， 实施 但去除基板上细 d、有机异物的能力却十分有限， 因而容易造成产品的不良率 增力口。 发明内容
本发明的实施例提供一种基板清洗装置、 系统及方法， 用以提高去除附 着在基板的细 d、有机异物的能力， 提高产品的良率。
根据本发明的一个方面， 提供一种基板清洗装置， 其包括： 水箱， 与所 述水箱相连的水泵， 与所述水泵相连的多个喷嘴， 以及设置于所述基板清洗 装置内的配置来在流体流出所述喷嘴之前对流体进行加热的加热器。 根据本 发明的一个实施例， 所述加热器可以包括设置于所述多个喷嘴处以对所述多 个喷嘴的流出流体进行加热的第一加热器。
根据本发明的一个实施例， 所述多个喷嘴的流出流体可以喷淋于传送中 的被清洗基板， 所述多个喷嘴可以包括至少一组预喷淋喷嘴和至少一组对沖 喷嘴， 每组所述对沖喷嘴包括相对设置的两组喷淋方向相对的喷嘴， 所述至 少一组预喷淋喷嘴可以在基板传送方向上设置于所述至少一组对沖喷嘴的上 游。
根据本发明的一个实施例， 所述加热器可以包括设置于所述水箱内以对 水箱内的水进行加热的第二加热器。
根据本发明的一个实施例， 所述基板清洗装置还可以包括与所述多个喷 嘴相连的气泵， 所述加热器包括设置于所述气泵和所述多个喷嘴的连通管路 上以对气体进行加热的气体加热器。
根据本发明的一个实施例， 所述基板清洗装置还可以包括配置来对被清 洗基板进行预加热的预加热器， 所述预加热器在基板传送方向上设置于所述 多个喷嘴的上游。
根据本发明的一个实施例， 所述预加热器可以为光照加热器或热风加热 器。
根据本发明的另一个方面， 提供一种基板清洗系统， 其包括： 如上所述 的任一种基板清洗装置； 温度传感器， 其设置于所述喷嘴的出水侧， 配置来 检测所述喷嘴的流出流体的温度信息； 以及控制装置， 其与所述温度传感器 信号连接， 配置成当所述喷嘴的流出流体温度小于设定的第一温度阈值时， 控制加热器进行加热， 并且当喷嘴的流出流体温度不小于设定的第一温度阈 值时， 控制加热器停止加热。
根据本发明的又一方面， 提供一种基板清洗方法， 其包括： 采用加热后 的水或加热后的水气混合流体对基板进行喷淋清洗。
根据本发明的一个实施例， 所述采用加热后的水或加热后的水气混合流 体对基板进行喷淋清洗可以包括： 采用加热后的水或加热后的水气混合流体 对被清洗基板进行预喷淋； 以及采用加热后的水或加热后的水气混合流体对 被清洗基板进行对沖喷淋。 根据本发明的一个实施例， 所述基板清洗方法还可以包括： 在采用加热 后的水或加热后的水气混合流体对被清洗基板进行所述喷淋清洗之前， 将基 板预加热至约 40~120°C。
根据本发明的一个实施例， 在采用加热后的水或加热后的水气混合流体 对被清洗基板进行所述喷淋清洗之前， 可以将基板预加热至约 100~120°C。
根据本发明的一个实施例， 上述任一种所述基板清洗方法还可以包括： 在采用加热后的水或加热后的水气混合流体对被清洗基板进行所述喷淋清洗 之后， 将基板降温至设定温度。
根据本发明的一个实施例， 在上述任一种所述基板清洗方法中， 所述加 热后的水或加热后的水气混合流体的温度可以为约 40~100°C。 附图说明
以下将结合附图对本发明的实施例进行更详细的说明， 以使本领域普通 技术人员更加清楚地理解本发明， 其中：
图 1为本发明的一个实施例的基板清洗装置结构示意图；
图 2为本发明的一个实施例的基板清洗装置的喷嘴排列结构示意图； 图 3为本发明的一个实施例的基板清洗装置的预加热器分布示意图； 图 4为本发明的一个实施例的基板清洗系统的工作流程示意图。
附图标记：
1-水箱 2-水泵 3-喷嘴 4-气泵 5-基板
6-传送装置 11-第二加热器 12-第一加热器 13-气体加热器
14-预加热器 31-—组预喷淋喷嘴 32-—组对沖喷嘴 具体实施方式
为使本发明的实施例的目的、 技术方案和优点更加清楚， 下面将结合本 发明实施例的附图对本发明的实施例的技术方案进行清楚、 完整的描述。 显 然， 所描述的实施例仅是本发明的一部分示例性实施例， 而不是全部的实施 例。 基于所描述的本发明的示例性实施例， 本领域普通技术人员在无需创造 性劳动的前提下所获得的所有其它实施例都属于本发明的保护范围。
除非另作定义， 此处使用的技术术语或者科学术语应当为本发明所属领 域内具有一般技能的人士所理解的通常意义。 本发明专利申请说明书以及权 利要求书中使用的 "第一"、 "第二" 以及类似的词语并不表示任何顺序、 数 量或者重要性， 而只是用来区分不同的组成部分。 同样， "一个"、 "一" 或者 "该" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "包括" 或者 "包含" 等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后 面列举的元件或者物件及其等同， 而不排除其他元件或者物件。 "连接" 或者 "相连" 等类似的词语并非限定于物理的或者机械的连接， 而是可以包括电 性的连接， 不管是直接的还是间接的。 "上游"、 "下游" 等仅用于表示相对位 置关系， 当被描述对象的绝对位置改变后， 则该相对位置关系也可能相应地 改变。
为了提高细小有机异物的去除几率， 本发明实施例提供了一种基板清洗 装置、 系统及方法。 在该技术方案中， 由于加热器的加热作用， 可以提高清 洗基板的流体的温度， 而使流体中的分子运动加剧， 以此可以提高有机异物 在流体中的溶解度， 从而增大有机异物去除几率。
本发明基板清洗方法的一实施例， 包括： 采用加热后的水或加热后的水 气混合流体对基板进行喷淋清洗。
在本发明实施例中， 可以采用热水对基板进行喷淋清洗， 也可以采用热 水和热气体形成的混合流体对基板进行喷淋清洗。 由于水温的提高， 水分子 运动加剧， 以此可以提高有机异物在水中的溶解度， 从而增大有机异物去除 几率。 此外， 在本发明实施例的清洗方法中， 由于水温的提高， 清洗时间相 对现有的常温清洗时间缩短， 进而提高了生产效率。
根据本发明的实施例， 所述加热后的水或加热后的水气混合流体的温度 为约 25~100°C , 例如， 所述加热后的水或加热后的水气混合流体的温度为约 40~100°C。
在本发明实施例中， 所述加热后的水或加热后的水气混合流体的温度可 以根据清洗的工艺的需要在约 25~100°C的范围内变化， 例如， 该温度可以为 约 25°C、 30°C、 40°C、 50°C、 60°C、 70°C、 80°C、 90°C或 100°C , 该温度也 可以为一个小范围， 如约 40~45°C , 80~83°C。
根据本发明的一个实施例， 所述采用加热后的水或加热后的水气混合流 体对基板进行喷淋清洗包括： 采用加热后的水或加热后的水气混合流体对被 清洗基板进行预喷淋； 之后， 采用加热后的水或加热后的水气混合流体对基 板进行对沖喷淋。 在本发明实施例中， 首先采用加热后的水或加热后的水气混合流体对基 板进行预喷淋， 这样可以在基板表面形成完整的高温水膜， 完成对基板的覆 盖和润湿； 再对基板进行对沖喷淋， 可以实现对清洗基板凹凸位置残留的细 小有机异物的精细清洗， 提高了清洗的洁净度， 进而降低了产品的不良率。
根据本发明的一个实施例， 采用加热后的水或加热后的水气混合流体对 被清洗基板进行喷淋清洗之前还包括： 将基板预加热至约 25~120°C。
在本发明实施例中， 通过对基板进行预加热， 可以增加有机高分子异物 的分子活性， 并降低在后期喷淋清洗时喷嘴处水温和到达基板表面的水温的 梯度差， 因此能进一步提高有机异物的去除率。 对基板进行预加热可以在喷 淋清洗前在基板传送过程中， 通过光照 （例如红外热源、 加热灯等）或其他 热源 （如热风）给基板加热， 控制基板的温度在约 25~120°C。 根据本发明的 一个实施例， 采用加热后的水或加热后的水气混合流体对基板进行喷淋清洗 之前还可以包括： 将基板预加热至约 40~120°C , 例如， 将基板预加热至约 100~120°C。
基板预加热的温度一般要高于后期喷淋清洗时的水温， 这是由于在基板 传送至喷淋清洗的位置时， 基板温度可能会有所降低， 并且基板温度略高于 喷淋清洗的水温， 也利于喷淋水的蒸发。
在本发明实施例中，基板的预加热温度可以根据清洗工艺的需要来调整， 例如， 可以将基板加热至约 40°C、 50°C、 60°C、 70°C、 80°C、 90°C、 100°C、 110°C或 120°C。 基板的加热温度越高， 有机异物的分子活性越高， 越容易被 热水或水气混合流体沖洗下来。
根据本发明的一个实施例， 采用加热后的水或加热后的水气混合流体对 被清洗基板进行喷淋清洗之后还可以包括： 将基板降温至设定温度。
在本发明实施例中， 由于基板制作工艺的需要， 对清洗完毕后的基板需 要降至合适的温度， 该温度根据清洗工艺的要求确定， 也可以根据清洗工艺 的后续工艺对温度要求而确定， 例如， 一般需要降低基板的温度至常温。
如图 1所示， 本发明的一个实施例提供了一种基板清洗装置， 其包括： 水箱 1、 与水箱 1相连的水泵 2与水泵 2相连的多个喷嘴 3。 多个喷嘴 3的流 出流体（可以为水或水气混合流体， 以下筒称为出水）喷淋于基板 5。 配置来 在流体流出多个喷嘴 3之前对流体进行加热的加热器设置于该基板清洗装置 内。作为示例， 图 1中图示了两个水箱 1 , 然而，本领域的技术人员应当明白， 视实际需要， 也可以设置一个水箱， 或者多于两个水箱。
在本发明实施例中， 在基板清洗装置内设置加热器， 该加热器配置来加 热基板或加热基板清洗装置内的用于清洗基板的流体， 该流体优选为水或水 气混合流体。 以水为例进行说明如下。 由于加热器的作用， 使得基板或用于 清洗基板的水的温度升高， 使得基板上有机异物的分子活性增高或水分子运 动加剧， 水溶解度提高， 进而可以使细小的有机异物溶解在水中， 从而可有 效去除细小的有机异物， 进而提高了产品的良率。 在本实施例的技术方案中， 水泵可以为常规水泵， 也可以为高压水泵。 当采用高压水泵时， 从喷嘴喷出 的水流的沖击力更大， 对异物的清洗效果更好。 在本发明技术方案中， 基板 可以是静止的基板（需要喷嘴移动）， 也可以为传送中的基板。 例如， 如图 1 所示， 传送装置 6传送基板 5至清洗工艺进行位置， 在清洗过程中也是处于 传送状态， 传送装置 6可以为辊道， 也可以为传送带。
根据本发明的一个实施例， 加热器包括设置于多个喷嘴 3处以对多个喷 嘴的出水进行加热的第一加热器 12, 如图 1所示。
在本实施例中， 由于在喷嘴 3处设置了第一加热器 12, 可用于加热喷嘴
3的出水，使得喷嘴 3的出水温度提高，水分子运动加剧，使得水溶解度提高， 进而可以使细小的有机异物溶解在水中， 从而可有效去除细小的有机异物， 进而提高了产品的良率。
如图 2所示， 根据本发明的一个实施例， 多个喷嘴 3的出水喷淋于传送 中的被清洗基板 5, 多个喷嘴包括至少一组预喷淋喷嘴 31和至少一组对沖喷 嘴 32。每组对沖喷嘴 32包括相对设置的两组喷淋方向彼此相对的喷嘴。所述 至少一组预喷淋喷嘴 31在基板传送方向上设置于所述至少一组对沖喷嘴 32 的上游。 这里的表述上游及下游定义为： 在基板传送方向上， 基板先经过的 位置为上游， 后经过的位置为下游。
在本发明的实施例中， 基板 5在传送装置 6的传送作用下被传送。 在基 板 5的传送方向上， 即图 2的箭头方向， 首先设置一组预喷淋喷嘴 31 , 配置 来对基板 5的表面进行预喷淋； 在预喷淋喷嘴 31之后设置至少一组对沖喷嘴 32, 这组喷嘴可分别相对传送方向和反传送方向进行喷水， 特别对于传送方 向和反传送方向的异物清洗较为彻底， 可以用于清洗基板表面凹凸位置的细 小的异物。 对沖喷嘴 32可以为一组， 如图 2所示， 也可以多设置几组， 如两 组， 三组等。 如图 2所示， 对沖喷嘴 32分为喷嘴 A和喷嘴 B两列， 其中一 列喷嘴 A的喷淋方向与基板传送方向相反， 另一列喷嘴 B的喷淋方向与基板 传送方向一致。 根据清洗前序工艺的产品信息， 可以获得基板凹凸处的有机 异物的位置， 根据该有机异物的位置可以控制一列喷嘴 A开启或一列喷嘴 B 开启， 例如， 以基板传送方向为凸起处前侧为例， 若清洗前序工艺的有机异 物位于凸起处前侧， 则控制一列喷嘴 A开启， 一列喷嘴 A喷淋方向与基板传 送方向相反， 这时可以沖洗掉位于凸起处前侧的有机异物； 同理， 若清洗前 序工艺的有机异物位于凸起处后侧， 则控制一列喷嘴 B开启。 在清洗工艺中， 一般基板的传送速度为约 3600~7200mm/min。 为了不影响清洗工艺的清洗效 果， 可以使相对设置的对沖喷嘴的水流速度到达基板的速度一致。 因此， 可 以对基板的传送速度进行合适地调整， 以使两组喷嘴的出水到达基板的速度 一致。
根据本发明实施例的基板清洗装置中， 所述加热器还包括设置于水箱 1 内对水箱 1内的水进行加热的第二加热器 11。
在本发明实施例中， 在水箱中增加第二加热器 11 , 使得进入水泵的水为 热水， 避免在喷嘴处加热时间不够引起的水温仍相对较低的问题。
根据本发明实施例的基板清洗装置， 如图 1所示， 还可以包括与多个喷 嘴 3相连的气泵 4,所述加热器包括设置于气泵 4和多个喷嘴 3的连通管路上 以对气体进行加热的气体加热器 13。
在本发明实施例中， 增加一路气体通道并在气路通道上设置气体加热器 13, 使热气和热水形成的水气混合流体一起从喷嘴喷出对基板进行清洗。 由 于热气与水混合形成的热气泡的沖击力， 使得附着在基板表面的异物更易被 沖洗掉， 因此， 提高了基板清洗装置对基板的清洗能力。
例如， 如图 3所示， 本发明实施例的基板清洗装置， 所述加热器包括对 基板进行预加热的预加热器 14,预加热器 14在基板 5的传送方向上设置于多 个喷嘴 3的上游。
在本发明实施例中，预加热器 14设置在传送基板 5进入喷嘴喷淋之前的 线路上， 可以采用光照 （例如为红外热源或者其他加热灯等）或热风等方式 对待清洗的基板在传送过程中进行预加热。 传送装置 6例如可以为辊道。
例如， 所述预加热器 14为光照加热器或热风加热器。
在本发明实施例中， 采用光照加热器或热风加热器可以方便地在基板 5 的传送过程中实现对基板 5的加热。 本发明实施例还提供一种应用上述基板清洗装置的基板清洗系统， 其包 括：
温度传感器 7,其设置于喷嘴的出水侧，配置来检测喷嘴的出水温度信息； 控制装置 8,其与所述温度传感器 7信号连接， 配置成当喷嘴的出水温度 小于设定的第一温度阈值时， 控制加热器进行加热。
在本发明实施例中， 采用控制装置实现对喷淋的自动化控制。 当喷嘴的 出水温度小于设定的第一温度阈值时， 控制加热器加热， 使得出水达到清洗 基板的合适的温度。
该控制装置既可以通过硬件实现控制功能， 也可以通过软件实现控制功 能。 所述设定的第一温度阈值可以根据经验进行设定， 其具体值不受限制， 根据清洗工艺的需要可以在合适的范围内进行调整。 如设定的第一温度阈值 的取值区间约为 [25°C-100°C] , 设定的第一温度阈值可以为约 25°C、 40°C、 70°C、 80°C、 90°C或 100 °C。
根据本发明的一个实施例， 当喷嘴的出水温度不小于设定的第一温度阈 值时， 所述控制装置 8控制加热器停止加热。
在本发明实施例中， 采用控制装置 8 实现对喷淋的自动化控制， 当喷嘴 的出水温度不小于设定的第一温度阈值时， 该温度即可满足清洗基板的需要， 这时控制加热器停止加热。
为了更详细描述本发明的基板清洗系统， 以下举一个具体实施例进行说 明。 在该实施例中， 包括如图 1所示的基板清洗装置， 即该系统包括第一加 热器 12、 第二加热器 11、 气体加热器 13以及气泵 4。 该基板清洗装置对传送 装置 6传送的基板 5进行清洗。 以下对控制装置 8的控制流程进行说明。
如图 4所示， 为本发明实施例的基板清洗系统的工作流程示意图， 根据 此图， 本发明一个实施例的基板清洗系统的工作流程包括：
步骤 101、 获取水箱内的水温信息；
步骤 102、 判断水箱内的水温是否小于设定的第一温度阈值； 如果否， 则 执行步骤 103; 如果是， 则控制装置 8控制水泵关闭， 不供给水， 继续获取水 箱内的水温信息（即返回步骤 101 );
步骤 103、 控制装置 8控制水泵开启， 实现水供给；
步骤 104、 水泵开启后， 获取喷嘴出水的温度信息；
步骤 105、 判断喷嘴出水的温度是否小于设定的第一温度阈值； 如果否， 则执行步骤 106; 如果是， 则执行步骤 107;
步骤 106、 控制第一加热器 12停止加热；
步骤 107、 控制第一加热器 12进行加热；
步骤 108、获取第一加热器 12的加热信息， 包括将第一加热器 12进行加 热的信息反馈给控制装置 8;
步骤 109、 控制装置 8控制第二加热器 11和气体加热器 13进行加热。 本发明实施例还提供了一种显示装置， 其包括采用任一实施例清洗得到 的基板。 采用本发明实施例清洗装置、 系统及方法得到的基板的有机异物明 显减少， 产品的良率得到了大大提升。
所述显示装置可以为： 液晶面板、 电子纸、 OLED面板、 液晶电视、 液晶显示器、 数码相框、 手机、 平板电脑等具有任何显示功能的产品或 部件。
在上述实施例中， 采用本发明基板清洗装置、 系统及方法， 可以有 效去除残留在基板 凸表面的有机异物， 提高了产品的良率， 并且， 采 用本发明的技术方案可以有效节约清洗时间， 提高了产品的生产效率。
尽管上述实施例中， 以水和水气混合流体为清洗剂的例子进行了说明， 然而也可以采用其他清洗剂对基板进行清洗， 此时， 各个加热器的加热温度 范围可以做适应性改动。 发明的精神和范围。 本发明也意图包含属于本发明权利要求范围之内的这些 修改和变型及其任何等同物。

Claims

权利要求书
1、 一种基板清洗装置， 包括：
水箱，
与所述水箱相连的水泵，
与所述水泵相连的多个喷嘴， 以及
设置于所述基板清洗装置内的配置来在流体流出所述多个喷嘴之前对流 体进行加热的加热器。
2、 如权利要求 1所述的基板清洗装置， 其中所述加热器包括设置于所述 多个喷嘴处以对所述多个喷嘴的流出流体进行加热的第一加热器。
3、 如权利要求 1或 2所述的基板清洗装置， 其中所述多个喷嘴的流出流 体喷淋于传送中的被清洗的基板， 所述多个喷嘴包括至少一组预喷淋喷嘴和 至少一组对沖喷嘴， 每组所述对沖喷嘴包括相对设置的两组喷淋方向相对的 喷嘴， 所述至少一组预喷淋喷嘴在基板传送方向上设置于所述至少一组对沖 喷嘴的上游。
4、 如权利要求 1-3任一项所述的基板清洗装置， 其中所述加热器包括设 置于所述水箱内以对水箱内的水进行加热的第二加热器。
5、 如权利要求 1-4任一项所述的基板清洗装置， 还包括与所述多个喷嘴 相连的气泵， 其中所述加热器包括设置于所述气泵和所述多个喷嘴的连通管 路上以对气体进行加热的气体加热器。
6、 如权利要求 1至 5任一项所述的基板清洗装置， 还包括配置来对被清 洗基板进行预加热的预加热器， 其中所述预加热器在基板传送方向上设置于 所述多个喷嘴的上游。
7、 如权利要求 6所述的基板清洗装置， 其中所述预加热器为光照加热器 或热风加热器。
8、 一种基板清洗系统， 包括：
如权利要求 1至 7之任一项所述的基板清洗装置；
温度传感器， 其设置于所述喷嘴的出水侧， 配置来检测喷嘴的流出流体 温度信息； 以及
控制装置， 其与所述温度传感器信号连接， 配置成当所述喷嘴的流出流 体温度小于设定的第一温度阈值时， 控制加热器进行加热， 并且当喷嘴的流 出流体温度不小于设定的第一温度阈值时， 控制所述加热器停止加热。
9、 一种基板清洗方法， 包括：
采用加热后的水或加热后的水气混合流体对被清洗基板进行喷淋清洗。
10、 如权利要求 9所述的基板清洗方法， 其中所述采用加热后的水或加 热后的水气混合流体对被清洗基板进行喷淋清洗包括：
采用加热后的水或加热后的水气混合流体对被清洗基板进行预喷淋； 以 及
采用加热后的水或加热后的水气混合流体对被清洗基板进行对沖喷淋。
11、 如权利要求 9或 10所述的基板清洗方法， 还包括： 在采用加热后的 水或加热后的水气混合流体对被清洗基板进行所述喷淋清洗之前， 将被清洗 基板预加热至约 40~120°C。
12、 如权利要求 9-11任一项所述的基板清洗方法， 其中， 在采用加热后 的水或加热后的水气混合流体对被清洗基板进行所述喷淋清洗之前， 将被清 洗基板预加热至约 100~ 120 °C。
13、 如权利要求 9至 12任一项所述的基板清洗方法， 还包括： 在采用加 热后的水或加热后的水气混合流体对被清洗基板进行所述喷淋清洗之后， 将 被清洗基板降至设定温度。
14、 如权利要求 9至 12任一项所述的基板清洗方法， 其中所述加热后 的水或加热后的水气混合流体的温度为约 40~100°C。
PCT/CN2013/080748 2013-05-15 2013-08-02 基板清洗装置、系统及方法 Ceased WO2014183339A1 (zh)

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Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
CN103286091B (zh) * 2013-06-09 2017-09-19 京东方科技集团股份有限公司 一种基板的清洗方法
CN103480622B (zh) * 2013-09-18 2016-06-08 合肥京东方光电科技有限公司 基板清洗装置及其工作方法、基板清洗系统
CN105957822B (zh) * 2016-06-22 2018-09-21 贵州雅光电子科技股份有限公司 一种二极管自动清洗系统及清洗方法
KR101966648B1 (ko) * 2016-09-05 2019-08-14 주식회사 디엠에스 기판세정장치
CN106623228A (zh) * 2017-01-09 2017-05-10 京东方科技集团股份有限公司 基板清洗用水箱、水箱加热系统、方法以及基板清洗装置
CN107755346B (zh) * 2017-10-31 2024-02-27 上海格尔恒精材料科技有限公司 一种高效的工件表面清洗系统及其清洗方法
CN120727600A (zh) * 2024-03-27 2025-09-30 盛美半导体设备(上海)股份有限公司 基板清洗装置及湿法设备
CN120152582A (zh) * 2025-05-15 2025-06-13 合肥维信诺科技有限公司 显示面板的制备方法、显示面板的冲洗装置及显示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297385A (zh) * 1998-04-16 2001-05-30 塞米特公司 用于处理诸如半导体晶片之类的工件的工艺和设备
JP2003045844A (ja) * 2001-07-26 2003-02-14 Advanced Display Inc 基板処理装置
CN1485150A (zh) * 2002-08-19 2004-03-31 �ձ�������ʽ���� 基板处理装置及基板清洗设备
CN1891358A (zh) * 2005-06-27 2007-01-10 岛田理化工业株式会社 基板清洗装置及基板清洗方法
CN101130188A (zh) * 2006-08-23 2008-02-27 株式会社细美事 基板清洗装置
JP2010092921A (ja) * 2008-10-03 2010-04-22 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
CN102099900A (zh) * 2008-07-31 2011-06-15 东京毅力科创株式会社 基板清洗方法、基板清洗装置和存储介质

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048983A (ja) * 2005-08-10 2007-02-22 Sony Corp 基板処理方法および基板処理装置
JP4986566B2 (ja) * 2005-10-14 2012-07-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP2007207941A (ja) * 2006-01-31 2007-08-16 Matsushita Electric Ind Co Ltd 基板洗浄方法、基板洗浄装置、およびそれを用いた電子デバイスの製造方法
CN201655759U (zh) * 2010-01-07 2010-11-24 扬发实业有限公司 半导体连续式清洗机

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297385A (zh) * 1998-04-16 2001-05-30 塞米特公司 用于处理诸如半导体晶片之类的工件的工艺和设备
JP2003045844A (ja) * 2001-07-26 2003-02-14 Advanced Display Inc 基板処理装置
CN1485150A (zh) * 2002-08-19 2004-03-31 �ձ�������ʽ���� 基板处理装置及基板清洗设备
CN1891358A (zh) * 2005-06-27 2007-01-10 岛田理化工业株式会社 基板清洗装置及基板清洗方法
CN101130188A (zh) * 2006-08-23 2008-02-27 株式会社细美事 基板清洗装置
CN102099900A (zh) * 2008-07-31 2011-06-15 东京毅力科创株式会社 基板清洗方法、基板清洗装置和存储介质
JP2010092921A (ja) * 2008-10-03 2010-04-22 Shibaura Mechatronics Corp 基板の処理装置及び処理方法

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