WO2014148726A1 - Procédé de fabrication d'une électrode en métal - Google Patents

Procédé de fabrication d'une électrode en métal Download PDF

Info

Publication number
WO2014148726A1
WO2014148726A1 PCT/KR2013/011658 KR2013011658W WO2014148726A1 WO 2014148726 A1 WO2014148726 A1 WO 2014148726A1 KR 2013011658 W KR2013011658 W KR 2013011658W WO 2014148726 A1 WO2014148726 A1 WO 2014148726A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
pattern
salt
grain
forming
Prior art date
Application number
PCT/KR2013/011658
Other languages
English (en)
Korean (ko)
Inventor
이동현
이동은
Original Assignee
단국대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 단국대학교 산학협력단 filed Critical 단국대학교 산학협력단
Publication of WO2014148726A1 publication Critical patent/WO2014148726A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the present invention relates to a method of manufacturing a metal electrode, and more particularly, to a method of manufacturing a metal electrode that can ensure a light transmittance using a fine pattern, and can secure excellent conductivity.
  • Electrodes are used as channels for supplying electrical energy to various electronic devices such as semiconductors, cells, solar cells, or light emitting diodes.
  • a bias is applied between at least two electrodes to initiate operation, or the electronic devices are operated in such a manner that a constant voltage is induced at the two electrodes.
  • Electrodes applied to these electronic devices have various material and configuration features.
  • the characteristics required for the electrode may require high processability, light transmittance or surface roughness depending on the inherent characteristics of the electronic device along with high conductivity.
  • a metal mesh structure may be used as the electrode applied to the solar cell, or may be used in the form of nanowires.
  • a conductive oxide is used as the electrode material in order to ensure high light transmittance in addition to the metal electrode.
  • Representative conductive oxides include ITO and the like. ITO has a high light transmittance, but has a relatively low conductivity compared to a metal material, and the unevenness of the bonding with the bonding wire made of gold is a problem during wire bonding due to the roughness of the surface.
  • electrodes have been employed in electronic devices with various materials and various configurations.
  • metal electrode it is difficult to secure the light transmittance.
  • a mesh-type metal pattern should be formed, which requires a separate lithography process.
  • a plurality of wires are sequentially stacked to form a mesh-type wire layer, there is a considerable difficulty in applying a metal pattern on a minute area.
  • transparent oxide conductive oxide is used to secure light transmittance.
  • conductive oxide is difficult to be applied to devices due to deposition process and patterning process, and it has lower conductivity than metal material. It is a weak point.
  • the technical problem to be achieved by the present invention is to provide a method of forming a metal electrode having a fine pattern, high conductivity and light transmittance.
  • the present invention for achieving the above technical problem, forming a grain pattern of the salt on the first substrate; Transferring the grain pattern of the salt to a second substrate to form a grain transfer pattern; Embedding a conductive ink in the grain transfer pattern of the second substrate; And transferring the conductive ink embedded in the grain transfer pattern to the third substrate.
  • the technical problem of the present invention forming a grain pattern of the salt on the first substrate; Forming a metal layer on the first substrate to fill the grain pattern; And forming a through pattern for dissolving the grain pattern to expose a portion of the surface of the first substrate.
  • a salt having a high solubility in water is crystallized to form a fine pattern.
  • the formed micropattern has a tree shape or root shape of nano size or micro size.
  • the metal electrode formed by using the formed micropattern has a high light transmittance and secures the inherent conductivity of the metal, which is a conductive material.
  • the crystal grain pattern may be dissolved using moisture to form the pattern. Therefore, the micropattern can be formed at low cost, and the pattern can be formed in a short time, thereby ensuring productivity.
  • FIG. 1 is a flowchart illustrating a method of forming a metal electrode according to a first embodiment of the present invention.
  • FIGS. 2 to 8 are perspective views and images for explaining a process of forming a metal electrode according to the manufacturing example of the present invention.
  • FIG. 9 is a graph showing the light transmittance of the metal electrode prepared according to the preparation example of the present invention.
  • 10 to 12 are cross-sectional views illustrating a method of forming a metal electrode according to a second embodiment of the present invention.
  • FIG. 1 is a flowchart illustrating a method of forming a metal electrode according to a first embodiment of the present invention.
  • a grain pattern of salt is formed on a first substrate (S110).
  • Grain patterns are formed by recrystallization of salts and have a tree shape or root shape.
  • the salt is dissolved in water to form an aqueous solution, and the aqueous solution is coated on the first substrate.
  • the salt dissolved through the drying of water is recrystallized to form a grain pattern having a specific shape.
  • the formed crystal pattern is formed in a convex shape protruding on the first substrate.
  • the grain pattern of the salt formed on the first substrate is transferred to the second substrate (S120).
  • Transfer to the second substrate is accomplished by forming a polymer substrate on the first substrate on which the grain pattern of the salt is formed and dissolving the salt through the supply of moisture.
  • the patterned salt is dissolved and removed through the supply of moisture, and the second substrate is peeled off from the first substrate. Since the crystal grain pattern of the salt is transferred on the peeled second substrate, a pattern transferred in a concave shape recessed from the second substrate is formed.
  • the conductive ink is embedded in the recessed concave shape of the second substrate (S130).
  • the conductive ink includes conductive metal particles.
  • conductive particles of silver or gold are included in the conductive ink and filled in the recessed pattern.
  • the second substrate filled with the conductive ink is bonded to the third substrate, and the pattern of the conductive ink filled through the imprinting process is transferred to the third substrate (S140).
  • the conductive pattern formed on the third substrate has the same shape as the crystal grain pattern of the salt formed on the first substrate and is transferred onto the third substrate.
  • FIGS. 2 to 8 are perspective views and images for explaining a process of forming a metal electrode according to the manufacturing example of the present invention.
  • an aqueous solution in which salt is dissolved is prepared.
  • the salt is Na 2 CO 3 .
  • the concentration is set at 0.01 wt% to 5 wt%.
  • the concentration of the salt is less than 0.01wt%, excessive time is required for the formation of the grain pattern of the salt, or the spacing between the grain patterns becomes wider and difficult to use as an electrode.
  • the concentration of the salt is more than 5wt%, the gap between the patterns is very narrow due to the high concentration, there is a problem that the connection between the patterns can not be secured to secure a predetermined light transmittance.
  • the prepared aqueous solution is coated on the first substrate 100. Coating is carried out by various methods such as spraying an aqueous solution or spin coating.
  • the material of the first substrate 100 is not particularly limited, and various materials may be applied. Therefore, any material may be used as long as the material has a surface flatness for formation of a grain pattern of the salt in the drying process of water. In this manufacturing example, a silicon substrate is used.
  • a drying process is performed on the aqueous solution coated on the first substrate 100.
  • the drying process is for evaporation of moisture is carried out at room temperature or less than 100 °C.
  • the recrystallization of the salt is induced on the first substrate 100 with the evaporation of moisture.
  • a tree-shaped or root-shaped crystal grain pattern 110 is formed.
  • FIG. 3 is an image showing a state in which Na 2 CO 3 is coated on a first substrate made of silicon at a concentration of 0.15 wt% and recrystallized.
  • the salt crystal pattern 110 is formed on the first substrate 100 made of silicon through a drying process of about 30 minutes at a room temperature of 25 ° C.
  • the grain pattern 110 of the formed salt has a root shape or a tree shape in a state of being physically connected to each other.
  • a second substrate 200 is formed on the first substrate 100 on which the grain pattern 110 is formed.
  • the second substrate 200 serves as a mold for transferring the pattern.
  • poly (dimethyl siloxane) (PDMS) and a curing agent are mixed on the first substrate 100, and the mixed solution is dropped onto the first substrate 100 and cured.
  • the flexible second substrate 200 of the PDMS material may be formed.
  • grain transfer patterns are formed on the second substrate 200 of the PDMS material in an intaglio form.
  • the first substrate 100 and the second substrate 200 are supplied with water to separate the first substrate 100 and the second substrate 200 from each other. Since the grain grain pattern of the salt is water-soluble, the grain grain pattern of the salt formed between the first substrate 100 and the second substrate 200 is dissolved by supplying moisture. Therefore, the second substrate 200 can be easily separated from the first substrate 100.
  • the supply of moisture may be achieved by immersing the first substrate 100 and the second substrate 200 in moisture.
  • a grain transfer pattern 210 formed in an intaglio pattern is formed on the second substrate 200 by bonding the first substrate 100 and the second substrate 200.
  • the grain transfer pattern 210 is a molten grain pattern is transferred to the second substrate 200.
  • FIG. 6 is an image of a second substrate separated from the first substrate in FIG. 5.
  • the second substrate 200 has a negative grain transfer pattern 210 recessed from the surface due to the dissolved grain pattern.
  • the conductive ink 220 is embedded on the negative grain transfer pattern of the separated second substrate 200.
  • the conductive ink 220 includes silver.
  • the conductive ink 220 is coated on the separated second substrate 200.
  • the conductive ink 220 is applied to the entire surface of the second substrate 200 through the coating.
  • dragging the second substrate 200 through a brush or planarized glass removes the conductive ink on the second substrate 200 except the negative grain transfer pattern. Therefore, the conductive ink 220 is embedded on the negative grain pattern.
  • a separate drying process for the embedded conductive ink 220 may be performed.
  • the second substrate 200 of FIG. 7 is applied to the third substrate 300.
  • the conductive ink 220 filling the negative grain transfer pattern of the second substrate 200 through the imprinting process may be embossed on the surface of the third substrate 300.
  • the shape of the crystal grain pattern 110 of the salt of FIG. 3 is transferred onto the third substrate 300.
  • the third substrate 300 is combined with the conductive ink 220 to bury the negative grain transfer pattern of the second substrate 200 through a compression or thermocompression process.
  • an embossed pattern of silver material is formed on the third substrate 300, and the formed embossed pattern maintains the same shape as the crystal grain pattern 110 of the salt formed on the first substrate 100.
  • a conductive pattern of a metal material formed on the third substrate 300 may be obtained. The formation of can be completed.
  • the third substrate 300 may be a film that performs a specific function and may be a component of a light emitting diode or a component of a solar cell.
  • FIG. 9 is a graph showing the light transmittance of the metal electrode prepared according to the present preparation.
  • a red curve is a graph showing light transmittance when silver is uniformly coated with a thickness of 3 nm on a glass substrate.
  • the blue curve is a graph showing the light transmittance when the glass substrate is used as the third substrate and the transfer is performed at a concentration of 0.15 wt% of Na 2 CO 3 .
  • the electrode when the electrode is formed in the shape of a tree or root of silver, it can be seen that the light transmittance is higher than that of the thin film having a thickness of 3 nm.
  • 10 to 12 are cross-sectional views illustrating a method of forming a metal electrode according to a second embodiment of the present invention.
  • a grain pattern 410 of salt is formed on the first substrate 400.
  • the grain pattern 410 is formed by recrystallization of salts and has a tree shape or a root shape.
  • the salt is dissolved in water to form an aqueous solution, and the aqueous solution is coated on the first substrate 400.
  • the salt dissolved through the drying of water is recrystallized to form a grain pattern 410 having a specific shape.
  • the formed crystal pattern 410 is formed in the shape of an embossed protrusion on the first substrate 400.
  • a metal layer 420 is formed on the first substrate 400.
  • the metal layer 420 is formed by filling the crystal grain pattern 410 protruding in an embossed shape on the first substrate 400.
  • the metal layer 410 is preferably formed through a solution process such as spin coating or spraying of conductive ink.
  • the metal layer 420 may not be formed on the side of the crystal pattern 410 having an embossed shape, and may be partially exposed.
  • a dissolution process for the first substrate 400 on which the metal layer 420 is formed is performed. Since the grain pattern of the salt formed in FIG. 10 has high solubility in water, the grain pattern of the salt is removed by supplying water to the first substrate 400. Therefore, the metal layer formed on the crystal grain pattern is also removed. As a result, a part of the first substrate 400 below the dissolved crystal grain pattern is exposed, and a through pattern 430 in which the metal layer is not formed is formed. In addition, the metal layer 420 on which the grain pattern is not formed remains.
  • the grain pattern of the salt formed on the first substrate is removed, and the remaining portion on the first substrate is formed of a metal layer.
  • the formed metal layer has a tree-shaped or root-shaped space.
  • the metal electrode can secure a predetermined light transmittance.
  • a salt having high solubility in water is crystallized to form a fine pattern.
  • the formed micropattern has a tree shape or root shape of nano size or micro size.
  • the metal electrode formed by using the formed micropattern has a high light transmittance and secures the inherent conductivity of the metal, which is a conductive material.
  • the crystal grain pattern may be dissolved using moisture to form the pattern. Therefore, the micropattern can be formed at low cost, and the pattern can be formed in a short time, thereby ensuring productivity.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé permettant de former une électrode en métal ayant une forme d'arbre ou une forme de racine. Un motif de grains de cristal est formé en recristallisant une solution aqueuse d'un sel dissous. Le motif de grain de cristal est transcrit sur un deuxième substrat, et les grains de cristal du sel sont dissous dans une fraction aqueuse. Le deuxième substrat est détaché du premier substrat avec la dissolution dans la fraction aqueuse. Le deuxième substrat, sur lequel le motif a été transcrit, est rempli d'une encre conductrice comprenant un métal et le motif est transcrit sur un troisième substrat par un processus d'empreinte.
PCT/KR2013/011658 2013-03-18 2013-12-16 Procédé de fabrication d'une électrode en métal WO2014148726A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130028625A KR101270803B1 (ko) 2013-03-18 2013-03-18 금속 전극의 제조방법
KR10-2013-0028625 2013-03-18

Publications (1)

Publication Number Publication Date
WO2014148726A1 true WO2014148726A1 (fr) 2014-09-25

Family

ID=48866117

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/011658 WO2014148726A1 (fr) 2013-03-18 2013-12-16 Procédé de fabrication d'une électrode en métal

Country Status (2)

Country Link
KR (1) KR101270803B1 (fr)
WO (1) WO2014148726A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314266A (zh) * 2020-02-26 2021-08-27 中国科学院长春光学精密机械与物理研究所 一种高电导效率的自然仿生学脉网状电极制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3152236B2 (ja) * 1993-09-21 2001-04-03 松下電器産業株式会社 電子部品の製造方法
JP2009302432A (ja) * 2008-06-17 2009-12-24 Bridgestone Corp 導電性部材の製造方法
KR101043307B1 (ko) * 2002-06-13 2011-06-22 시마 나노 테크 이스라엘 리미티드 전도성 투명 나노-코팅 및 나노-잉크를 제조하는 방법과 이에 의하여 제조된 나노-분말 코팅 및 잉크

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3152236B2 (ja) * 1993-09-21 2001-04-03 松下電器産業株式会社 電子部品の製造方法
KR101043307B1 (ko) * 2002-06-13 2011-06-22 시마 나노 테크 이스라엘 리미티드 전도성 투명 나노-코팅 및 나노-잉크를 제조하는 방법과 이에 의하여 제조된 나노-분말 코팅 및 잉크
JP2009302432A (ja) * 2008-06-17 2009-12-24 Bridgestone Corp 導電性部材の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314266A (zh) * 2020-02-26 2021-08-27 中国科学院长春光学精密机械与物理研究所 一种高电导效率的自然仿生学脉网状电极制备方法

Also Published As

Publication number Publication date
KR101270803B1 (ko) 2013-06-05

Similar Documents

Publication Publication Date Title
CN111607234B (zh) 一种量子点组合物及其制备方法、量子点图案化方法以及图案化量子点固态膜
KR102302407B1 (ko) 전극 구조체 및 그것의 터치 패널
US20150313022A1 (en) Grid and nanostructure transparent conductor for low sheet resistance applications
TWI602333B (zh) 光電裝置及製造光電裝置之方法
US9603240B2 (en) Making Z-fold micro-wire substrate structure
WO2009151203A1 (fr) Élément chauffant et procédé de fabrication de celui-ci
TWI383479B (zh) 使用晶片載置器控制電子裝置
CN102576818A (zh) 制造光电设备的方法
WO2012134200A2 (fr) Substrat pour dispositif d'électrode organique
CN103021532A (zh) 透明电极层积体
WO2019066336A1 (fr) Substrat d'électrode pour unité d'affichage à diode électroluminescente transparente et son procédé de fabrication
WO2020040516A1 (fr) Substrat d'électrode pour dispositif d'affichage à diodes électroluminescentes transparent, et dispositif d'affichage à diodes électroluminescentes transparent le comprenant
US20150346876A1 (en) Z-fold micro-wire substrate structure
CN111354508A (zh) 一种柔性电极薄膜及应用
WO2012177102A2 (fr) Procédé de préparation d'un film à base de nanotubes de carbone
WO2020040518A1 (fr) Substrat d'électrode incorporé pour affichage à élément électroluminescent transparent et son procédé de fabrication
CN109950380A (zh) 发光二极管封装
WO2011043580A2 (fr) Procédé de fabrication d'un film d'électrode en matière plastique
US9195358B1 (en) Z-fold multi-element substrate structure
WO2017082699A1 (fr) Procédé de préparation de piles solaires
WO2014148726A1 (fr) Procédé de fabrication d'une électrode en métal
CN105948023A (zh) 图形化石墨烯及其制备方法
CN112670248B (zh) 柔性显示面板及其制备方法
WO2015009059A1 (fr) Procédé de fabrication d'un dispositif électroluminescent organique ultramince
WO2015182832A1 (fr) Procédé de fabrication de microstructure et microstructure ainsi fabriquée

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13879048

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13879048

Country of ref document: EP

Kind code of ref document: A1