WO2014141991A1

WO2014141991A1 - Solid-state image-pickup device, method for producing same, and electronic equipment

Info

Publication number: WO2014141991A1
Application number: PCT/JP2014/055739
Authority: WO
Inventors: 納土　晋一郎; 大塚　洋一
Original assignee: ソニー株式会社
Priority date: 2013-03-15
Filing date: 2014-03-06
Publication date: 2014-09-18
Also published as: TW201436186A; KR20150130974A; CN105308746A; JP6314969B2; US9985066B2; TWI636557B; US20160013233A1; CN105308746B; KR102210008B1; CN110957338A; JPWO2014141991A1

Abstract

The present technique pertains to a solid-state image-pickup device configured so that oblique incidence light properties of image pickup pixels and AF properties of phase difference detection pixels can be made excellent, to a method for producing the same, and to electronic equipment. A solid-state image-pickup device includes: a plurality of image pickup pixels arranged two-dimensionally in matrix; and phase difference detection pixels that are scattered among the image pickup pixels. The solid-state image-pickup device further includes: first microlenses that are formed so as to correspond to the image pickup pixels, respectively; a flattening film that is formed on the first microlenses and has a refractive index lower than that of the first microlenses; and second microlenses that are formed on the flattening film, only at positions above the phase difference detection pixels. The present technique can be applied to, for example, a CMOS solid-state image-pickup device.

Description

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

The present technology relates to a solid-state imaging device, a manufacturing method thereof, and an electronic device, and in particular, a solid-state imaging device capable of improving both oblique incident light characteristics of imaging pixels and AF characteristics of phase difference detection pixels and The present invention relates to a manufacturing method and an electronic device.

Since the back-illuminated solid-state imaging device has a wiring layer on the opposite side of the light-receiving surface, the condensing structure can be reduced in height compared to the front-illuminated solid-state imaging device, and excellent oblique incident light characteristics can be obtained. It is known that it can be realized.

Also, a solid-state imaging device that performs phase difference detection by providing a phase difference detection pixel in which a part of the photoelectric conversion unit is shielded from light in a normal imaging pixel is known. In the phase difference detection pixel, it is necessary to increase the distance between the microlens and the light-shielding film, that is, to increase the height of the light-collecting structure in order to align the light collection point with the light-shielding film.

Here, when a phase difference detection pixel is provided in a back-illuminated solid-state imaging device, a low profile is required to obtain the oblique incident light characteristic of the imaging pixel, while to obtain the AF characteristic of the phase difference detection pixel. There is a trade-off that heightening is required.

In order to eliminate this trade-off, there has been proposed an image pickup device in which the light receiving element of the phase difference detection pixel is formed low while the height of the microlens is aligned between the image pickup pixel and the phase difference detection pixel ( Patent Document 1). In addition, it is disclosed that an imaging distance of the phase difference detection pixel is secured by providing a step in the micro lens of the phase difference detection pixel (see Patent Document 2).

JP 2008-71920 A JP 2007-281296 A

However, in the structure of Patent Document 1, since the film thickness of the Si substrate is different between the imaging pixel and the phase difference detection pixel, it is necessary to separate the potential design and the ion implantation process between the imaging pixel and the phase difference detection pixel. In addition, the interface state is disturbed due to etching damage when the light receiving element is dug, which may affect the characteristics in the dark.

Further, Patent Document 2 does not disclose a specific method for providing a step in the microlens of the phase difference detection pixel, and vignetting occurs due to reflection at a wall portion formed by the step. Degradation of the oblique incident light characteristics of the imaging pixels is inevitable.

The present technology has been made in view of such a situation, and makes it possible to improve both the oblique incident light characteristic of the imaging pixel and the AF characteristic of the phase difference detection pixel.

A solid-state imaging device according to an aspect of the present technology is a solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels. , A first microlens formed for each imaging pixel, a planarization film having a refractive index lower than that of the first microlens formed on the first microlens, and a phase difference detection pixel A second microlens formed only on the planarizing film.

The first microlens can be formed also on the phase difference detection pixel.

The refractive index of the planarizing film can be 1.5 or less, and the refractive index of the first and second microlenses can be 1.4 or more.

The second microlens may have the same composition as the planarizing film.

The planarization film may be made by adding fluorine or hollow silica to an acrylic resin or a siloxane resin.

The first and second microlenses can be made of an organic material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin.

The first and second microlenses are made of an organic / inorganic hybrid material in which TiO fine particles are dispersed in a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, a siloxane resin, or a polyimide resin. Can be.

The first and second microlenses can be made of an SiN-based or SiON-based inorganic material.

A light shielding wall can be formed at a boundary portion between the phase difference pixel and the imaging pixel in the planarization film.

The gap on the light receiving surface side can be sealed with seal glass and seal resin.

A planarizing film having a refractive index lower than that of the first and second microlenses is further formed on the second microlens, and the gap on the planarizing film is sealed with the sealing glass and the sealing resin. It can be stopped.

The gap on the second microlens is sealed with the sealing glass and the sealing resin, and the refractive index of the second microlens is sufficiently higher than the refractive index of the sealing resin. Can do.

The second microlens may be formed by sealing the sealing resin having a higher refractive index than the planarizing film in a recess formed on the planarizing film.

The sealing resin can be made of acrylic resin, silicone resin, or epoxy resin.

A method of manufacturing a solid-state imaging device according to one aspect of the present technology includes a plurality of imaging pixels that are two-dimensionally arranged in a matrix, and phase difference detection pixels that are scattered and arranged in the imaging pixels. A first microlens is formed for each of the imaging pixels, and a planarizing film having a refractive index lower than that of the first microlens is formed on the first microlens. Forming a second microlens only on the planarizing film of the phase difference detection pixel.

An electronic apparatus according to an aspect of the present technology is a solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels, A first microlens formed for each imaging pixel; a planarization film having a refractive index lower than that of the first microlens formed on the first microlens; and the phase difference detection pixel. A solid-state imaging device including a second microlens formed only on a planarizing film, a signal processing circuit that processes an output signal output from the solid-state imaging device, and incident light is incident on the solid-state imaging device And a lens.

The signal processing circuit can correct shading that occurs in the imaging pixels arranged in the vicinity of the phase difference pixels.

The signal processing circuit can correct the shading using a shading function, which is obtained in advance and represents a degree of shading corresponding to the arrangement of the imaging pixels to be subjected to shading correction.

The shading function can be obtained according to a lens parameter of the lens unit.

The signal processing circuit can correct the shading by using the output of the imaging pixel of the same color closest to the imaging pixel to be subjected to shading correction.

In one aspect of the present technology, in a solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels, the first microlens Is formed for each imaging pixel, a planarizing film having a lower refractive index than the first microlens is formed on the first microlens, and a second microlens is formed only on the planarizing film of the phase difference detection pixel. Is done.

According to one aspect of the present technology, both the oblique incident light characteristic of the imaging pixel and the AF characteristic of the phase difference detection pixel can be improved.

It is a block diagram which shows the schematic structural example of the solid-state imaging device to which this technique is applied. It is sectional drawing which shows the structural example of the solid-state imaging device of 1st Embodiment of this technique. It is a figure which shows the example of the shape of a light shielding film. 3 is a flowchart illustrating a manufacturing process of the solid-state imaging device in FIG. 2. It is a figure explaining the manufacturing process of a solid-state imaging device. It is a figure explaining the manufacturing process of a solid-state imaging device. It is a figure explaining the manufacturing process of a solid-state imaging device. It is sectional drawing which shows the modification of a solid-state imaging device. It is sectional drawing which shows the modification of a solid-state imaging device. It is sectional drawing which shows the modification of a solid-state imaging device. It is sectional drawing which shows the structural example of the solid-state imaging device of 2nd Embodiment of this technique. 12 is a flowchart illustrating a manufacturing process for the solid-state imaging device in FIG. 11. It is sectional drawing which shows the structural example of the solid-state imaging device of 3rd Embodiment of this technique. It is a flowchart explaining the manufacturing process of the solid-state imaging device of FIG. It is sectional drawing which shows the modification of a solid-state imaging device. It is sectional drawing which shows the modification of a solid-state imaging device. It is sectional drawing which shows the modification of a solid-state imaging device. It is sectional drawing which shows the modification of a solid-state imaging device. It is a flowchart explaining the manufacturing process of the solid-state imaging device of FIG. It is sectional drawing which shows the modification of a solid-state imaging device. It is a block diagram showing an example of composition of electronic equipment of a 4th embodiment of this art. It is a figure explaining a shading.

Hereinafter, embodiments of the present technology will be described with reference to the drawings. The description will be given in the following order.
1. 1. Schematic configuration example of solid-state imaging device First embodiment (example of basic solid-state imaging device of the present technology)
3. Second embodiment (an example of a solid-state imaging device having a light-shielding wall at a pixel boundary)
4). Third Embodiment (Example of Solid-State Imaging Device with Cavityless CSP Structure)
5. Fourth embodiment (an example of an electronic apparatus including a solid-state imaging device of the present technology)

<1. Schematic configuration example of solid-state imaging device>
FIG. 1 illustrates a schematic configuration example of an example of a complementary metal oxide semiconductor (CMOS) solid-state imaging device applied to each embodiment of the present technology.

As shown in FIG. 1, the solid-state imaging device 1 includes a pixel region (so-called imaging region) in which pixels 2 including a plurality of photoelectric conversion elements are regularly arranged in a two-dimensional manner on a semiconductor substrate 11 (for example, a silicon substrate). 3 and a peripheral circuit portion.

The pixel 2 includes a photoelectric conversion element (for example, a photodiode) and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors can be constituted by three transistors, for example, a transfer transistor, a reset transistor, and an amplifying transistor, and can further be constituted by four transistors by adding a selection transistor. Since the equivalent circuit of each pixel 2 (unit pixel) is the same as a general one, detailed description thereof is omitted here.

Also, the pixel 2 can have a shared pixel structure. The pixel sharing structure includes a plurality of photodiodes, a plurality of transfer transistors, one shared floating diffusion, and one other pixel transistor that is shared.

The peripheral circuit section includes a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, and a control circuit 8.

The control circuit 8 receives data for instructing an input clock, an operation mode, and the like, and outputs data such as internal information of the solid-state imaging device 1. Specifically, the control circuit 8 is based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, and the clock signal or the reference signal for the operations of the vertical drive circuit 4, the column signal processing circuit 5, and the horizontal drive circuit 6 Generate a control signal. The control circuit 8 inputs these signals to the vertical drive circuit 4, the column signal processing circuit 5, and the horizontal drive circuit 6.

The vertical drive circuit 4 is composed of, for example, a shift register, selects a pixel drive wiring, supplies a pulse for driving the pixel 2 to the selected pixel drive wiring, and drives the pixels 2 in units of rows. Specifically, the vertical drive circuit 4 selectively scans each pixel 2 in the pixel region 3 sequentially in the vertical direction in units of rows, and generates the signal according to the amount of light received by the photoelectric conversion element of each pixel 2 through the vertical signal line 9. A pixel signal based on the signal charge is supplied to the column signal processing circuit 5.

The column signal processing circuit 5 is disposed, for example, for each column of the pixels 2 and performs signal processing such as noise removal on the signal output from the pixels 2 for one row for each pixel column. Specifically, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise specific to the pixel 2, signal amplification, A / D (Analog / Digital) conversion, and the like. . At the output stage of the column signal processing circuit 5, a horizontal selection switch (not shown) is provided connected to the horizontal signal line 10.

The horizontal drive circuit 6 is constituted by, for example, a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in order, and the pixel signal is output from each of the column signal processing circuits 5 to the horizontal signal line. 10 to output.

The output circuit 7 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 10 and outputs the signals. For example, the output circuit 7 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.

The input / output terminal 12 is provided for exchanging signals with the outside.

<2. First Embodiment>
[Configuration of solid-state imaging device]
FIG. 2 shows a configuration example of the first embodiment of the solid-state imaging device of the present technology. The solid-state imaging device according to each embodiment of the present technology is configured as a backside illumination type CMOS solid-state imaging device.

In the solid-state imaging device 20 according to the first embodiment, for example, a pixel region (so-called imaging region) in which a plurality of pixels are arranged on a semiconductor substrate 21 made of silicon, and a peripheral circuit unit ( (Not shown).

The unit pixel 22 (hereinafter simply referred to as the pixel 22) includes a photodiode PD which is a photoelectric conversion unit and a plurality of pixel transistors Tr. The photodiode PD is formed so as to cover the entire area of the semiconductor substrate 21 in the thickness direction, and the first conductivity type (n-type in this example) semiconductor region 25 and the second conductivity type (p in this example) facing both the front and back surfaces of the substrate. A pn junction type photodiode with the semiconductor region 26. The p-type semiconductor regions facing both the front and back surfaces of the substrate also serve as hole charge accumulation regions for dark current suppression.

The pixel 22 including the photodiode PD and the pixel transistor Tr includes an imaging pixel 23 that generates a signal for generating an image based on the received subject light, and AF (Auto-Focus) (phase difference AF) of a phase difference detection method. The phase difference detection pixel 24 generates a signal for performing the above.

The phase difference detection pixels 24 are scattered and arranged in a plurality of imaging pixels 23 that are two-dimensionally arranged in a matrix. Specifically, the phase difference detection pixels 24 are regularly arranged in a specific pattern by replacing a part of predetermined imaging pixels 23 among the plurality of imaging pixels 23 arranged in a two-dimensional matrix. Has been.

Each pixel 22 (imaging pixel 23 and phase difference detection pixel 24) is separated by an element isolation region 27. The element isolation region 27 is formed of a p-type semiconductor region and is grounded, for example. In the pixel transistor Tr, an n-type source region and a drain region (not shown) are formed in a p-type semiconductor well region 28 formed on the substrate surface 21a side of the semiconductor substrate 21, and a gate insulating film is formed on the substrate surface between the two regions. A gate electrode 29 is formed through the structure. In FIG. 2, a plurality of pixel transistors are represented by a single pixel transistor Tr and are schematically represented by a gate electrode 29.

On the substrate surface 21 a of the semiconductor substrate 21, a so-called multilayer wiring layer 33 is formed, in which a plurality of layers of wirings 32 are arranged via an interlayer insulating film 31. Since no light is incident on the multilayer wiring layer 33 side, the layout of the wiring 32 is freely set.

An insulating layer is formed on the substrate back surface 21b which becomes the light receiving surface 34 of the photodiode PD. This insulating layer is formed of an antireflection film 36 in this example. The antireflection film 36 is formed of a plurality of layers having different refractive indexes. In this example, the antireflection film 36 is formed of two layers of a hafnium oxide (HfO 2) film 38 and a silicon oxide film 37.

A light shielding film 39 is formed at the pixel boundary on the antireflection film 36. The light-shielding film 39 may be any material that shields light, and is a metal, for example, aluminum (Al), tungsten (W), or copper (as a material that has a strong light-shielding property and can be precisely processed by fine processing, for example, etching. It is preferable to form a Cu) film.

The light shielding film 39 has a shape as shown in FIG. As shown in FIG. 3, the light shielding film 39 has a grid-like region that suppresses flare caused by light mixture of pixels or light having a large incident angle at pixel boundaries. Further, the light shielding film 39 covers the outside of the pixel area, and the OPB (Optical Black) clamp area 39b for detecting a black level that is a reference for dark output, and light from different exit pupils in the phase difference detection pixel 24 And a separation part 39p for separating the.

Note that, as shown in FIG. 2, in the phase difference detection pixel 24, the left half of the photodiode PD is shielded from light by the separation unit 39p.

These regions in the light shielding film 39 do not need to be formed at the same time, and may be formed separately. In addition, for example, when priority is given to improvement in sensitivity over suppression of color mixing and flare, the width of the grid-like region may be reduced.

A planarizing film 41 is formed on the antireflection film 36 including the light shielding film 39, and a color filter 42 is formed on the planarizing film 41 for each pixel 22.

The planarization film 41 is formed, for example, by spin-coating an organic material such as resin. The flattening film 41 is formed in order to avoid unevenness generated in the spin coating process when forming the color filter 42. However, the flattening film 41 is not formed if the unevenness is within an allowable range. Also good. Further, the planarizing film 41 may be formed by depositing an inorganic film such as SiO2 and planarizing by CMP (Chemical-Mechanical-Polishing).

The color filter 42 is formed by, for example, spin coating a pigment or a dye. For example, a Bayer color filter is used as the color filter 42, but other color filters may be used.

On the color filter 42, a micro lens 43 is formed for each pixel 22.

The microlens 43 is made of a material having a refractive index of 1.4 or more, and is made of an organic material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin. The refractive index of the styrene resin is about 1.6, the refractive index of the acrylic resin is about 1.5, the refractive index of the styrene-acrylic copolymer resin is about 1.5 to 1.6, and the refractive index of the siloxane resin is about 1.45.

The microlens 43 may be formed of the above-described styrene resin, acrylic resin, styrene-acrylic copolymer resin, siloxane resin, or an organic / inorganic hybrid material in which TiO fine particles are dispersed in a polyimide resin. Good.

Furthermore, the microlens 43 may be formed of an SiN-based or SiON-based inorganic material. The refractive index of SiN is about 1.9 to 2.0, and the refractive index of SiON is about 1.45 to 1.9.

A low n planarization film 44 is formed on the microlens 43. Here, “low n” means a low refractive index. The low n planarization film 44 is formed of a material lower than the refractive index of the microlens 43 (material having a refractive index of 1.5 or less), and is formed by adding fluorine or hollow silica to, for example, an acrylic resin or a siloxane resin. Is done. In this case, the refractive index of the low n planarization film 44 is about 1.2 to 1.45.

The low n planarization film 44 may be formed by depositing an inorganic film such as SiO 2 and planarizing by CMP. In this case, the refractive index of the low n planarization film 44 is about 1.45.

Then, the upper microlens 45 is formed only on the low n planarization film 44 of the phase difference detection pixel 24. The microlens 45 on the layer is formed of a material having a refractive index of 1.4 or more, like the microlens 43, and is made of an organic material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin. It is formed. The on-layer microlens 45 may be formed of these organic materials, an organic / inorganic hybrid material in which TiO fine particles are dispersed in a polyimide resin, or an SiN-based or SiON-based inorganic material. Also good.

[Flow of manufacturing process of solid-state imaging device]
Next, a manufacturing process of the solid-state imaging device 20 in FIG. 2 will be described with reference to FIGS. FIG. 4 is a flowchart for explaining the manufacturing process of the solid-state imaging device 20, and FIGS. 5 to 7 show cross-sectional views of the solid-state imaging device 20 in the manufacturing process.

First, in step S11, the photodiode PD corresponding to each pixel 22 separated by the element isolation region 27 by the p-type semiconductor region is formed in the region where the pixel region of the semiconductor substrate 21 is to be formed.

In step S12, a plurality of pixel transistors Tr are formed in a p-type semiconductor well region 28 formed in a region corresponding to each pixel 22 on the substrate surface 21a.

In step S13, a multilayer wiring layer 33 in which a plurality of wirings 32 are arranged via an interlayer insulating film 31 is formed on the substrate surface 21a.

In step S14, as shown in FIG. 5A, an antireflection film 36 is formed on the substrate back surface 21b serving as a light receiving surface, and a light shielding film material layer 39a is further formed on the antireflection film 36.

In step S15, a resist mask is selectively formed on the light shielding film material layer 39a by lithography. This resist mask is formed in a shape as shown in FIG. Then, as shown in FIG. 5B, the light shielding film material layer 39a is selectively removed by etching through the resist mask to form the light shielding film 39. Etching can be wet etching or dry etching. When dry etching is used, the fine line width of the light shielding film 39 can be obtained with high accuracy.

In step S16, as shown in FIG. 6A, a planarizing film 41 is formed on the antireflection film 36 including the light shielding film 39.

In step S 17, for example, a Bayer array color filter 42 is formed on the planarizing film 41 for each pixel 22.

In step S18, as shown in FIG. 6B, the micro lens 43 is formed on the color filter 42 for each pixel 22. Specifically, a photoresist, for example, a photosensitive material mainly composed of a novolak resin is patterned by lithography. The patterned photoresist is heat-treated at a temperature higher than the thermal softening point to form a lens shape. Then, using the photoresist formed in the lens shape as a mask, the microlens 43 is formed for all the pixels 22 by pattern-transferring the lens shape to the underlying lens material using dry etching.

In step S19, as shown in FIG. 7A, a low n planarization film 44 is formed on the microlens 43.

In step S20, the upper microlens 45 is formed only on the low n planarization film 44 of the phase difference detection pixel 24, as shown in FIG. 7B. The on-layer microlens 45 is formed in the same manner as the method in which the microlens 43 is formed in step S17.

The formation of the microlens 43 and the layered microlens 45 is not limited to the above-described method. For example, a lens material made of a photosensitive resin is formed, and prebake, exposure, development, and bleaching exposure processes are performed. A method of performing a heat treatment at a temperature higher than the thermal softening point of the lens material after sequentially performing may be used.

In the above processing, in order to improve the separability of the phase difference detection pixels 24, the layer thickness of the entire solid-state imaging device 20 and the curvature of the microlens are adjusted so that the condensing point matches the light shielding film 39. Is called.

The layer thickness of the entire solid-state imaging device 20 is adjusted by, for example, the film thickness of the low n planarization film 44, the film thickness of the lens material of the microlens 43 and the on-layer microlens 45, and the etching amount of the lens material.

The curvature of the microlens is adjusted by lithography resist film thickness, reflow, dry etching conditions (gas type, processing time, power, etc.) at the time of lens formation. Further, the microlens 43 and the layered microlens 45 are formed in a lens shape so that the curvature is constant from any direction so that the condensing points are aligned. Specifically, by finding the lithography reticle shape (square, octagon, circle) suitable for the pixel size, its dimensions, reflow temperature, and dry etching conditions, the lens shape that makes the curvature constant from any direction A microlens 43 and a layered microlens 45 are formed.

Here, in the configuration in which a step is provided in the microlens of the phase difference detection pixel disclosed in Patent Document 2, for example, when considering forming this step before the microlens, in lithography for lens formation, When the resist is applied, unevenness due to a level difference occurs, or the focus control of lithography with respect to different heights becomes difficult, so that the lens shape may be crushed. If this step is formed after the microlens, the phase difference detection pixel may be masked with a resist, and the imaging pixel may be etched to make it lower, but the lens shape is crushed by excessive etching. There is a risk.

Furthermore, when considering the assembly process of the configuration disclosed in Patent Document 2, there is a risk that the BGR tape cannot be applied due to the step, or the structure with the step is damaged when the tape is peeled off.

Also, the light reflected by the difference in refractive index with air at the wall portion formed by the step may affect adjacent pixels.

As described above, in the configuration disclosed in Patent Document 2, in the back-illuminated solid-state imaging device having the imaging element and the phase difference detection pixel, the imaging pixel is reduced in height and the phase difference detection pixel is increased in height. It is difficult to eliminate the trade-off that is required.

On the other hand, according to the above processing, there is no risk of unevenness in the lens forming lithography, or the lens shape may be crushed due to lithography defocusing or excessive etching, and a wall portion for a step is formed. Therefore, it is possible to realize a configuration that eliminates the trade-off of reducing the height of the imaging pixel and increasing the height of the phase difference detection pixel without fear of affecting adjacent pixels. Both the incident light characteristic and the AF characteristic of the phase difference detection pixel can be improved.

In order to suppress reflection at an interface having a different refractive index, specifically, an interface between the microlens 43 and the low n planarization film 44 or an interface between the upper microlens 45 and the air, the microlens 43 or the layer An antireflection film may be formed on the surface of the upper microlens 45.

Specifically, an oxide film is formed conformally on the surface of the upper microlens 45, or SiON is formed conformally on the surface of the microlens 43. Note that the thickness of the antireflection film is determined in consideration of interference of incident light.

In the following, modifications of the present embodiment will be described.

[Modification 1]
FIG. 8 shows a modification of the first embodiment of the solid-state imaging device of the present technology.

In addition, in the solid-state imaging device 60 of FIG. 8, about the structure provided with the function similar to what was provided in the solid-state imaging device 20 of FIG. 2, the same name and the same code | symbol shall be attached | subjected, and the description is abbreviate | omitted suitably. It shall be.

8 is configured such that the micro lens 43 is not formed on the phase difference detection pixel 61.

In the phase difference detection pixel, it is required that the condensing point matches the light shielding film, but in the case of condensing through a plurality of lenses as in the phase difference detection pixel 24 of FIG. There is a risk of affecting the light collection characteristics.

On the other hand, in the phase difference detection pixel 61 of FIG. 8, since the light is condensed only by the upper microlens 45, the light condensing characteristic is not affected by variations in lens formation, and the accuracy of the phase difference AF is not affected. Can be improved. The phase difference detection pixel 61 has a light condensing power lower than that of the phase difference detection pixel 24, but this can be improved by increasing the height of the upper microlens 45 or increasing the curvature of the upper microlens 45. Can do. On the contrary, the phase difference detection pixel 24 has a higher condensing power than the phase difference detection pixel 61, so that the layer thickness of the entire solid-state imaging device can be kept low.

[Modification 2]
FIG. 9 shows another modification of the first embodiment of the solid-state imaging device of the present technology.

In addition, in the solid-state imaging device 70 of FIG. 9, about the structure provided with the function similar to what was provided in the solid-state imaging device 20 of FIG. 2, the same name and the same code | symbol shall be attached | subjected, and the description is abbreviate | omitted suitably. It shall be.

The solid-state imaging device 70 of FIG. 9 has a configuration in which an upper microlens 72 is formed on the low n planarization film 44 of the phase difference detection pixel 71.

The upper microlens 72 has the same composition as the low n planarization film 44. In step S20 in the flowchart of FIG. 4, the upper microlens 72 forms a lens shape by lithography and reflow on the low n planarization film 44, and uses dry etching to form the low n planarization film 44 serving as a base. It is formed by pattern transfer of the lens shape.

Such a configuration can reduce the step of applying the lens material of the on-layer microlens.

[Modification 3]
FIG. 10 shows still another modification of the first embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 80 in FIG. 10, configurations having the same functions as those provided in the solid-state imaging device 60 in FIG. 8 are given the same names and the same reference numerals, and descriptions thereof are omitted as appropriate. It shall be.

The solid-state imaging device 80 in FIG. 10 is formed on the low n planarization film 44 of the phase difference detection pixel 81 in the same manner as the solid-state imaging device 70 in FIG. The lens 72 is formed.

With such a configuration, it is possible to improve the accuracy of the phase difference AF and reduce the step of applying the lens material of the on-layer microlens.

<3. Second Embodiment>
[Configuration of solid-state imaging device]
FIG. 11 illustrates a configuration example of the second embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 100 of FIG. 11, components having the same functions as those provided in the solid-state imaging device 20 of FIG. 2 are denoted by the same names and the same reference numerals, and description thereof is omitted as appropriate. It shall be.

11 has a configuration in which a light shielding wall 102 is formed at a boundary portion between the imaging pixel 23 and the phase difference detection pixel 101 in the low n planarization film 44.

The light shielding wall 102 is formed, for example, by embedding a light shielding material in a groove formed so as to surround a portion of the phase difference detection pixel 101 in the low n planarization film 44.

[Flow of manufacturing process of solid-state imaging device]
Next, the manufacturing process of the solid-state imaging device 100 will be described with reference to the flowchart of FIG.

Note that the processing in steps S111 to S119 and S121 in the flowchart in FIG. 12 is the same as the processing in steps S11 to S20 in the flowchart in FIG.

That is, after the low n planarization film 44 is formed in step S119, the light shielding wall 102 is formed around the phase difference detection pixel 101 in the low n planarization film 44 in step S120.

Specifically, a groove pattern is formed by lithography so as to surround the phase difference detection pixel 101 in the low n planarization film 44, and transferred to the base using dry etching. Note that the low n planarization film 44 may be formed of a photosensitive material, and the groove pattern may be formed by pattern exposure. In this case, the dry etching process can be reduced.

Then, for example, a light shielding material containing carbon black is embedded in the groove pattern by spin coating and flattened by etch back to form the light shielding wall 102.

According to the above processing, in the back-illuminated solid-state imaging device having the imaging element and the phase difference detection pixel, the trade-off that the reduction in the height of the imaging pixel and the increase in the height of the phase difference detection pixel are required is eliminated. It is possible to suppress the color mixture from the imaging pixels around the phase difference detection pixel while realizing the configuration.

Note that the solid-state imaging device 100 of FIG. 11 may be configured such that the microlens 43 is not formed in the phase difference detection pixel 101, or is configured to include the upper microlens 72 instead of the upper microlens 45. You may make it.

Incidentally, in recent years, a chip size package (CSP) structure has been proposed as a simple packaging technology for optical sensors such as CMOS solid-state imaging devices. However, in this CSP structure, if there is a gap (hereinafter referred to as a cavity) between the seal glass and the chip (optical sensor), the chip may be warped due to thermal stress during a thermal process such as reflow. there were.

On the other hand, a CSP structure having no cavity by filling the cavity with resin (hereinafter referred to as a cavityless CSP structure) has been proposed.

Therefore, in the following, a configuration in which the present technology is applied to a solid-state imaging device having a cavityless CSP structure will be described. In the following, the configuration of the solid-state imaging device according to the first embodiment having a cavityless CSP structure will be described. However, the solid-state imaging device according to the second embodiment can of course have a cavityless CSP structure. .

<4. Third Embodiment>
[Configuration of solid-state imaging device]
FIG. 13 illustrates a configuration example of the third embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 200 of FIG. 13, components having the same functions as those provided in the solid-state imaging device 20 of FIG. 2 are denoted by the same names and the same reference numerals, and the description thereof is omitted as appropriate. It shall be.

In the solid-state imaging device 200 of FIG. 13, the low n planarization film 201 is formed on the low n planarization film 44 including the upper microlens 45.

Similarly to the low n planarization film 44, the low n planarization film 201 is formed of a material having a refractive index lower than that of the microlens 43 and the upper microlens 45. For example, an acrylic resin or a siloxane resin is made of fluorine or hollow. It is formed by adding silica. In this case, the refractive index of the low n planarization film 201 is about 1.2 to 1.45.

The low n planarization film 201 may be formed by depositing an inorganic film such as SiO 2 and planarizing by CMP. In this case, the refractive index of the low n planarization film 201 is about 1.45.

Note that the low n planarization film 201 and the low n planarization film 44 may be formed of the same material or different materials.

A seal resin 202 is formed on the low n planarization film 201. The seal resin 202 is formed of an acrylic resin, a silicone resin, an epoxy resin, or the like. A seal glass 203 is formed on the seal resin 202.

As described above, the solid-state imaging device 200 has a cavityless CSP structure in which the cavity on the light receiving surface side is sealed with the sealing resin 202 and the sealing glass 203.

[Flow of manufacturing process of solid-state imaging device]
Next, a manufacturing process of the solid-state imaging device 200 will be described with reference to the flowchart of FIG.

Note that the processing of steps S211 to S220 in the flowchart of FIG. 14 is the same as the processing of steps S11 to S20 of the flowchart of FIG.

That is, after the upper microlens 45 is formed in step S220, the low n planarization film 201 is formed on the low n planarization film 44 including the upper microlens 45 in step S221.

In step S222, the cavity is sealed with the sealing resin 202. Specifically, the cavity is sealed by forming the sealing resin 202 on the low n planarization film 201 and further forming the sealing glass 203 thereon.

According to the above processing, in the back-illuminated solid-state imaging device having the imaging element and the phase difference detection pixel, the trade-off that the reduction in the height of the imaging pixel and the increase in the height of the phase difference detection pixel are required is eliminated. It is possible to obtain the effect of the cavityless CSP structure while realizing the configuration.

In the following, modifications of the present embodiment will be described.

[Modification 1]
FIG. 15 illustrates a modification of the third embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 210 in FIG. 15, components having the same functions as those provided in the solid-state imaging device 200 in FIG. 13 are denoted by the same names and the same reference numerals, and description thereof is omitted as appropriate. It shall be.

15 is configured such that the microlens 43 is not formed on the phase difference detection pixel 61. The solid-state imaging device 210 shown in FIG.

With such a configuration, in the solid-state imaging device 210 of FIG. 15, as with the phase difference detection pixel 61 of FIG. 8, the focusing characteristics are not affected by variations in lens formation, and the accuracy of the phase difference AF is improved. Can be improved.

[Modification 2]
FIG. 16 illustrates another modification of the third embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 220 in FIG. 16, components having the same functions as those provided in the solid-state imaging device 200 in FIG. 13 are given the same name and the same reference numerals, and the description thereof is omitted as appropriate. It shall be.

In the solid-state imaging device 220 in FIG. 16, the low n planarization film 201 is not formed on the low n planarization film 44 including the upper microlens 45, and the seal resin 202 is formed. A seal glass 203 is formed on the seal resin 202. In this case, the process of step S221 is skipped in the flowchart of FIG.

In this example, the on-layer microlens 45 is formed of a material having a refractive index higher than that of the sealing resin 202 (generally about 1.5), for example, an SiN-based or SiON-based inorganic material. As described above, the refractive index of SiN is about 1.9 to 2.0, and the refractive index of SiON is about 1.45 to 1.9.

With such a configuration, the process of forming the low n planarization film 201 can be reduced.

[Modification 3]
FIG. 17 shows still another modification of the third embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 230 in FIG. 17, configurations having the same functions as those provided in the solid-state imaging device 220 in FIG. 16 are denoted by the same names and the same reference numerals, and description thereof will be omitted as appropriate. It shall be.

17 is configured such that the micro lens 43 is not formed in the phase difference detection pixel 61.

With such a configuration, the accuracy of the phase difference AF can be improved, and the process of forming the low n planarization film 201 can be reduced.

[Modification 4]
FIG. 18 illustrates still another modification of the third embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 240 in FIG. 18, configurations having the same functions as those provided in the solid-state imaging device 220 in FIG. 16 are denoted by the same names and the same reference numerals, and description thereof is omitted as appropriate. It shall be.

The solid-state imaging device 240 shown in FIG. 18 has a configuration in which a phase-difference detection pixel 241 is formed with a downwardly convex upper-layer microlens 242.

The upper microlens 242 is formed by sealing a sealing resin having a higher refractive index than that of the low n planarization film 44 in a recess formed in the low n planarization film 44 of the phase difference detection pixel 241.

[Flow of manufacturing process of solid-state imaging device]
Next, the manufacturing process of the solid-state imaging device 240 will be described with reference to the flowchart of FIG.

Note that the processing in steps S261 through S269 in the flowchart in FIG. 19 is the same as the processing in steps S211 through S219 in the flowchart in FIG.

That is, after the low n planarization film 44 is formed in step S269, a recess is formed on the low n planarization film 44 in step S270.

Specifically, for example, using a method disclosed in Japanese Patent No. 4705499, a convex lens is formed with a resist on the low n planarization film 44 of the phase difference detection pixel 241, and the etching rate is higher than that of the convex lens. A recess is formed on the low n planarization film 44 by planarizing with a slow material and proceeding with etching.

Note that the method of forming the recess is not limited to the above-described method, and for example, a pinhole may be formed with a resist, and the recess may be formed by isotropic wet etching, or by anisotropic dry etching, A rectangular opening may be formed on the low n planarization film 44, and a lens-shaped recess may be formed by reflow.

In step S271, the cavity is sealed with the sealing resin 202. Specifically, by forming the sealing resin 202 on the low n planarization film 201 and further forming the sealing glass 203 thereon, the downwardly convex layered microlens 242 is formed and the cavity is formed. Sealed.

According to the above processing, the process of applying the lens material of the on-layer microlens can be reduced.

[Modification 5]
FIG. 20 shows still another modification of the third embodiment of the solid-state imaging device of the present technology.

In the solid-state imaging device 250 of FIG. 20, components having the same functions as those provided in the solid-state imaging device 240 of FIG. 18 are denoted by the same names and the same reference numerals, and description thereof will be omitted as appropriate. It shall be.

20 is configured such that the microlens 43 is not formed on the phase difference detection pixel 251.

With such a configuration, in the solid-state imaging device 250 of FIG. 20, as with the phase difference detection pixel 61 of FIG. 8, the light collection characteristics are not affected by variations in lens formation, and the accuracy of the phase difference AF is improved. Can be improved.

In the above, the configuration in which the present technology is applied to a back-illuminated CMOS solid-state imaging device has been described. However, the technology is applied to a solid-state imaging device such as a front-illuminated CMOS solid-state imaging device or a CCD (Charge-Coupled Device) solid-state imaging device. You may make it do.

In addition, this technique is not restricted to application to a solid-state imaging device, It can apply also to an imaging device. Here, the imaging apparatus refers to a camera system such as a digital still camera or a digital video camera, or an electronic apparatus having an imaging function such as a mobile phone. In some cases, a module-like form mounted on an electronic device, that is, a camera module is used as an imaging device.

<5. Fourth Embodiment>
[Configuration example of electronic equipment]
Here, with reference to FIG. 21, the structural example of the electronic device of the 4th Embodiment of this technique is demonstrated.

21 is provided with a solid-state imaging device 301, an optical lens 302, a shutter device 303, a drive circuit 304, and a signal processing circuit 305. As the solid-state imaging device 301, the solid-state imaging device according to the first to third embodiments of the present technology described above is provided.

The optical lens 302 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 301. As a result, signal charges are accumulated in the solid-state imaging device 301 for a certain period. The shutter device 303 controls the light irradiation period and the light shielding period for the solid-state imaging device 301.

The drive circuit 304 supplies a drive signal for controlling the signal transfer operation of the solid-state imaging device 301 and the shutter operation of the shutter device 303. The solid-state imaging device 301 performs signal transfer according to a drive signal (timing signal) supplied from the drive circuit 304. The signal processing circuit 305 performs various signal processing on the signal output from the solid-state imaging device 301. The video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.

By the way, in the solid-state imaging device of the present technology, for example, the solid-state imaging device 20 of the first embodiment, as shown in FIG. A part of the light L is taken into the phase difference detection pixel 24 as the light L ′, so that shading occurs in the imaging pixel 23.

Therefore, the signal processing circuit 305 of the electronic device 300 performs processing for correcting shading generated in the imaging pixel 23 adjacent to the phase difference detection pixel 24 on the signal output from the solid-state imaging device 301.

When a uniform subject is imaged by an electronic device including the solid-state imaging device of the present technology, the signal output from the solid-state imaging device shows different image height dependence at imaging pixels around the phase difference detection pixel. This also depends on the relative position of the imaging pixel with respect to the phase difference detection pixel.

Therefore, a shading function G (x, y, i) representing the degree of shading corresponding to the arrangement of the imaging pixels to be subjected to shading correction is obtained in advance from the signal (pixel value). Here, x and y are coordinates indicating the two-dimensional arrangement of the imaging pixels in the pixel region, and i indicates the relative position of the imaging pixel with respect to the phase difference detection pixel.

The shading function G (x, y, i) is obtained for each lens parameter (lens type, zoom value, F value, etc.) of the optical lens 302 and is made into a database. Here, considering the symmetry of the pixel area, simplify the shading function G (x, y, i) using polynomial approximation, etc., so as to reduce the memory capacity required for creating a database. Also good.

The signal processing circuit 305 reads the corresponding shading function G (x, y, i) based on the lens parameters of the optical lens 302, and performs the shading function G on the signal output from the solid-state imaging device 301 by actual imaging. Shading is corrected by rebating with (x, y, i).

Note that the shading function G (x, y, i) may be obtained as a model function corresponding to the lens parameter instead of being obtained for each lens parameter.

According to the above configuration, in the solid-state imaging device of the present technology, it is possible to reduce shading that occurs in the imaging pixels adjacent to the upper microlens.

Note that the signal processing circuit 305 corrects shading using the output of the imaging pixel of the same color closest to the imaging pixel to be subjected to shading correction without using the shading function G (x, y, i). It may be.

Note that the embodiments of the present technology are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present technology.

Furthermore, this technique can take the following structures.
(1)
A solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels,
A first microlens formed for each imaging pixel;
A planarizing film formed on the first microlens and having a refractive index lower than that of the first microlens;
A solid-state imaging device comprising: a second microlens formed only on the planarizing film of the phase difference detection pixel.
(2)
The solid-state imaging device according to (1), wherein the first microlens is also formed in the phase difference detection pixel.
(3)
The solid-state imaging device according to (1) or (2), wherein the planarization film has a refractive index of 1.5 or less, and the first and second microlenses have a refractive index of 1.4 or more.
(4)
The solid-state imaging device according to any one of (1) to (3), wherein the second microlens has the same composition as the planarization film.
(5)
The solid-state imaging device according to any one of (1) to (4), wherein the planarizing film is made by adding fluorine or hollow silica to an acrylic resin or a siloxane resin.
(6)
The first and second microlenses are made of an organic material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin. (1) to (5) Imaging device.
(7)
The first and second microlenses are made of an organic / inorganic hybrid material in which TiO fine particles are dispersed in a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, a siloxane resin, or a polyimide resin. The solid-state imaging device according to any one of 1) to (5).
(8)
The solid-state imaging device according to any one of (1) to (5), wherein the first and second microlenses are made of an SiN-based or SiON-based inorganic material.
(9)
The solid-state imaging device according to any one of (1) to (8), wherein a light-shielding wall is formed at a boundary portion between the phase difference pixel and the imaging pixel in the planarizing film.
(10)
The solid-state imaging device according to any one of (1) to (9), wherein a gap on the light-receiving surface side is sealed with a seal glass and a seal resin.
(11)
Further, a planarizing film having a lower refractive index than the first and second microlenses is formed on the second microlens,
The solid-state imaging device according to (10), wherein the gap on the planarizing film is sealed with the seal glass and the seal resin.
(12)
The gap on the second microlens is sealed by the seal glass and the seal resin;
The solid-state imaging device according to (10), wherein a refractive index of the second microlens is sufficiently higher than a refractive index of the seal resin.
(13)
The solid-state imaging according to (10), wherein the second microlens is formed by sealing the sealing resin having a refractive index higher than that of the planarization film in a recess formed on the planarization film. apparatus.
(14)
The solid-state imaging device according to any one of (10) to (13), wherein the seal resin is made of an acrylic resin, a silicone resin, or an epoxy resin.
(15)
A method for manufacturing a solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels,
Forming a first microlens for each imaging pixel;
A planarizing film having a refractive index lower than that of the first microlens is formed on the first microlens,
A method of manufacturing a solid-state imaging device, comprising: forming a second microlens only on the planarizing film of the phase difference detection pixel.
(16)
A solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels,
A first microlens formed for each imaging pixel;
A planarizing film formed on the first microlens and having a refractive index lower than that of the first microlens;
A solid-state imaging device comprising: a second microlens formed only on the planarization film of the phase difference detection pixel;
A signal processing circuit for processing an output signal output from the solid-state imaging device;
An electronic device comprising: a lens that makes incident light incident on the solid-state imaging device.
(17)
The electronic device according to (16), wherein the signal processing circuit corrects shading generated in the imaging pixel disposed in the vicinity of the phase difference pixel.
(18)
The electronic device according to (17), wherein the signal processing circuit corrects the shading using a shading function that is obtained in advance and represents a degree of shading corresponding to an arrangement of the imaging pixels to be subjected to shading correction.
(19)
The electronic device according to (18), wherein the shading function is obtained according to a lens parameter of the lens unit.
(20)
The electronic device according to (17), wherein the signal processing circuit corrects the shading using an output of the imaging pixel of the same color that is closest to the imaging pixel to be subjected to shading correction.

20 solid-state imaging device, 23 imaging pixels, 24 phase difference detection pixels, 43 microlenses, 44 low n flattened film, 45 upper microlenses, 60 solid-state imaging devices, 61 phase difference detection pixels, 70 solid-state imaging devices, 71st position Phase detection pixel, 72 layer microlens, 80 solid-state imaging device, 81 phase difference detection pixel, 100 solid-state imaging device, 101 phase difference detection pixel, 102 shading wall, 200 solid-state imaging device, 201 low n flattening film, 202 seal Resin, 203 seal glass, 210 solid-state imaging device, 220 solid-state imaging device, 230 solid-state imaging device, 240 solid-state imaging device, 241 phase difference detection pixel, 242 layer upper microlens, 250 solid-state imaging device, 251 phase difference detection pixel 300 electronics, 301 solid-state imaging device, 305 a signal processing circuit

Claims

A solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels,
A first microlens formed for each imaging pixel;
A planarizing film formed on the first microlens and having a refractive index lower than that of the first microlens;
A solid-state imaging device comprising: a second microlens formed only on the planarizing film of the phase difference detection pixel.
The solid-state imaging device according to claim 1, wherein the first microlens is also formed in the phase difference detection pixel.
The solid-state imaging device according to claim 1, wherein a refractive index of the planarizing film is 1.5 or less, and a refractive index of the first and second microlenses is 1.4 or more.
The solid-state imaging device according to claim 1, wherein the second microlens has the same composition as the planarization film.
The solid-state imaging device according to claim 1, wherein the planarizing film is made by adding fluorine or hollow silica to an acrylic resin or a siloxane resin.
The solid-state imaging device according to claim 1, wherein the first and second microlenses are made of an organic material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin.
The first and second microlenses are made of an organic / inorganic hybrid material in which TiO fine particles are dispersed in a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, a siloxane resin, or a polyimide resin. Item 2. The solid-state imaging device according to Item 1.
The solid-state imaging device according to claim 1, wherein the first and second microlenses are made of an SiN-based or SiON-based inorganic material.
The solid-state imaging device according to claim 1, wherein a light shielding wall is formed at a boundary portion between the phase difference pixel and the imaging pixel in the planarizing film.
The solid-state imaging device according to claim 1, wherein the gap on the light receiving surface side is sealed with seal glass and seal resin.
Further, a planarizing film having a lower refractive index than the first and second microlenses is formed on the second microlens,
The solid-state imaging device according to claim 10, wherein the gap on the planarizing film is sealed with the seal glass and the seal resin.
The gap on the second microlens is sealed by the seal glass and the seal resin;
The solid-state imaging device according to claim 10, wherein a refractive index of the second microlens is sufficiently higher than a refractive index of the seal resin.
The solid-state imaging according to claim 10, wherein the second microlens is formed by sealing the sealing resin having a refractive index higher than that of the planarizing film in a recess formed on the planarizing film. apparatus.
The solid-state imaging device according to claim 10, wherein the seal resin is made of an acrylic resin, a silicone resin, or an epoxy resin.
A method for manufacturing a solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels,
Forming a first microlens for each imaging pixel;
A planarizing film having a refractive index lower than that of the first microlens is formed on the first microlens,
A method of manufacturing a solid-state imaging device, comprising: forming a second microlens only on the planarizing film of the phase difference detection pixel.
A solid-state imaging device having a plurality of imaging pixels arranged two-dimensionally in a matrix and phase difference detection pixels arranged scattered in the imaging pixels,
A first microlens formed for each imaging pixel;
A planarizing film formed on the first microlens and having a refractive index lower than that of the first microlens;
A solid-state imaging device comprising: a second microlens formed only on the planarization film of the phase difference detection pixel;
A signal processing circuit for processing an output signal output from the solid-state imaging device;
An electronic device comprising: a lens that makes incident light incident on the solid-state imaging device.
The electronic apparatus according to claim 16, wherein the signal processing circuit corrects shading that occurs in the imaging pixel disposed in the vicinity of the phase difference pixel.
The electronic apparatus according to claim 17, wherein the signal processing circuit corrects the shading using a shading function that is obtained in advance and represents a degree of shading corresponding to an arrangement of the imaging pixels to be subjected to shading correction.
The electronic device according to claim 18, wherein the shading function is obtained according to a lens parameter of the lens unit.
The electronic device according to claim 17, wherein the signal processing circuit corrects the shading using an output of the imaging pixel of the same color that is closest to the imaging pixel to be subjected to shading correction.