JP2010245202A - Solid-state image pickup device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state image pickup device which is improved in uniformity of sensitivity in an imaging plane and in smear characteristics. <P>SOLUTION: An in-layer lower convex lens 6 on a light receiving portion 1 positioned in the center of the imaging plane is in a shape which is symmetrical about an axis passing a lens lowest point such that the axis is aligned with the center of an opening 16 of a light shielding film 4. An in-layer lower convex lens 6 on a light receiving portion 1 positioned closer to a periphery of the image plane than the center of the imaging plane has a lens lowest point shifted from the center of the opening 16 of the light shielding film 4 toward the periphery of the imaging plane, and the amount of shifting of the axis is larger as each light receiving portion 1 is farther away from the center of the imaging plane. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a structure that realizes in-plane uniformity of sensitivity and low smear.

  In recent years, solid-state imaging devices have been used in a wide range of applications such as digital video cameras (movies) and digital still cameras, such as mobile phones, surveillance cameras, medical cameras, and in-vehicle cameras. As the application expands, there is a strong demand for downsizing a system including an optical system, and there is a strong demand for downsizing of a solid-state imaging device. A CCD (Charge Coupled Device) will be described as a representative of the solid-state imaging device.

  When the optical system is miniaturized, the physical distance from the lens or diaphragm to the CCD is reduced, and incident light has a larger incident angle around the CCD chip than at the center. As a result, incident light is “erased” by the light-shielding film above the photodiode in the peripheral region, and nonuniform sensitivity and smear deterioration have become apparent in the imaging region plane.

  FIG. 13 is a schematic cross-sectional view of an imaging region of a conventional solid-state imaging device. A light receiving portion 1 such as a photodiode is formed in the substrate S, and a transfer gate 3 (a vertical transfer path (not shown) (also referred to as a vertical CCD or VCCD) not shown) is formed on the substrate S through a gate insulating film 2. The light-shielding film 4 having the opening 16 above the light-receiving portion 1, the in-layer upward convex lens 7, the top lens (not shown), and the like are formed. A diaphragm 13 is provided above the solid-state imaging device.

  In such a solid-state imaging device, incident light is irradiated from the diaphragm 13 to the entire surface of the imaging surface. At the center of the imaging region, the light enters the light receiving unit 1 vertically through the in-layer upper convex lens 7, while the periphery of the imaging region. The angle formed with the center line of the light-receiving unit 1 increases as the distance from increases. Regardless of the position in the imaging region, if the upper convex lens 7 is provided with the opening 16 aligned with the center line, only a small amount of light is incident on the light receiving unit 1 around the imaging region.

  Therefore, for example, in Patent Document 1, as the distance of the light receiving unit 1 from the center of the imaging region is larger, a so-called scaling technique that shifts the in-layer upward convex lens 7 formed thereon closer to the center of the imaging region can be applied. Proposed. By making the light incident on the light receiving unit 1 at each position through the intra-layer upper convex lens 7, the uniformity of sensitivity within the imaging surface is improved. A scaling technique may be used for a top lens (not shown).

JP-A-10-229180

  In the above-described solid-state imaging device, although the incident effect is increased particularly in the photodiode around the imaging region by application of the scaling technique, the focused position is outside the center of the opening 16, that is, closer to the vertical transfer path. Therefore, so-called smear deterioration becomes a problem.

  In view of the above problems, an object of the present invention is to provide a solid-state imaging device having improved sensitivity uniformity and smear characteristics in an imaging plane.

  In order to achieve the above object, a solid-state imaging device of the present invention includes a plurality of light-receiving portions that perform photoelectric conversion, and a light-shielding film that covers an imaging region of a substrate on which the plurality of light-receiving portions are formed and that is opened above each light-receiving portion. And a downwardly convex lens on the light receiving portion located at the center of the imaging region in a solid-state imaging device comprising at least a convex lens below the respective openings of the light shielding film The axis of light passing through the lens bottom point coincides with the center of the opening of the light-shielding film, has a symmetrical shape with the axis as the center, and is positioned closer to the periphery than the center of the imaging region. In the downward convex lens on the part, the lowest point of the lens is shifted from the center of the opening of the light shielding film toward the periphery of the imaging region, and the amount of the shift is determined by each light receiving unit in the imaging region. It is characterized by being larger as it gets away from the center.

  Further, in the above solid-state imaging device, a convex lens is formed above each of the bottom convex lenses, and the top convex lens is centered on an axis passing through the lens top point. It is characterized by a symmetrical shape.

  Further, in the above solid-state imaging device, a convex lens is formed above each of the bottom convex lenses, and the top convex lens is centered on an axis passing through the lens top point. The upwardly convex lens on the light receiving unit located in the center of the imaging region has a symmetrical shape, and the uppermost point of the lens coincides with the center of the opening of the light shielding film, and the center of the imaging region In the upward convex lens on the light receiving unit located closer to the periphery, the uppermost point of the lens is shifted from the center of the opening of the light shielding film toward the center of the imaging region, and the amount of shift is Each of the light receiving portions is larger as the distance from the center of the imaging region increases.

  Further, in the solid-state imaging device, a convex lens is formed above each of the convex lenses below, and the convex lens on the light receiving unit located at the center of the imaging region. The lens has a symmetrical shape with the axis passing through the lens top point coincident with the center of the opening of the light-shielding film and is centered on the axis, and is located closer to the periphery than the center of the imaging region. In the upwardly convex lens on the part, the uppermost point of the lens is shifted from the center of the opening of the light shielding film toward the center of the imaging region, and the amount of shift is determined by each light receiving unit at the center of the imaging region. It is characterized by being larger as it gets away from.

  Further, a color filter and a top lens are formed above each of the lower convex lenses. The top lens on the light receiving unit located at the center of the imaging region has the lens uppermost point coincident with the center of the opening of the light shielding film, and is located closer to the periphery than the center of the imaging region The top lens of the upper lens has its lens top point shifted from the center of the opening of the light shielding film toward the center of the imaging region, and the amount of shift is as each light receiving unit moves away from the center of the imaging region. It is large.

  The method for manufacturing a solid-state imaging device according to the present invention includes a step of forming a plurality of light receiving portions in an imaging region of a substrate, and a step of forming on the substrate a light shielding film having an opening above each of the plurality of light receiving portions. Forming a first insulating film having a concave shape above each of the plurality of light receiving portions on the light shielding film, and a second insulating film having a refractive index higher than that of the first insulating film. Forming the first insulating film on the first insulating film, and the step of forming the first insulating film comprises forming the first insulating film at the bottom of the concave shape at the center of the imaging region. The point is located at the center of the opening of the light shielding film, and the concave lowest point located closer to the periphery than the center of the imaging region is shifted to the outside of the imaging region from the center of the opening of the light shielding film. It is characterized by forming in.

  In the method of manufacturing the solid-state imaging device, the step of forming the first insulating film includes a step of forming a flowable insulating film having a concave portion along the surface shape on the light shielding film, The method includes a step of removing each portion of the concave shape portion located nearer to the periphery than the center of the imaging region, and a step of flowing the flowable insulating film.

  The step of forming the first insulating film includes a step of forming a first flowable insulating film having a concave portion along the surface shape on the light shielding film, and a step closer to the periphery than the center of the imaging region. Forming a second flow insulating film on the concave portion located at a position near the center of the imaging region; and the first flow insulating film and the second flow insulating film. And a flow process.

  Before the step of forming the first insulating film, a convex pattern is formed on the light-shielding film closer to the center of the imaging region than the light-receiving unit for each light-receiving unit located closer to the periphery than the center of the imaging region. The method further comprises the step of forming

  Before the step of forming the light shielding film, a step of forming a convex pattern on the substrate closer to the center of the imaging region than the light receiving unit for each light receiving unit located closer to the periphery than the center of the imaging region Is further provided.

  According to the present invention, the shape of the downwardly convex intralayer lens is made optimal in accordance with the position in the imaging region, so that incident light is condensed near the center of the opening even in the vicinity of the imaging region. Thus, it is possible to realize uniformity of sensitivity in the imaging surface and improvement of smear characteristics.

Sectional drawing of the solid-state imaging device concerning the 1st Embodiment of this invention Sectional drawing of the solid-state imaging device which concerns on the 2nd Embodiment of this invention. Sectional drawing of the solid-state imaging device which concerns on the 3rd Embodiment of this invention. Sectional drawing of the solid-state imaging device which concerns on the 4th Embodiment of this invention. Sectional drawing of the solid-state imaging device concerning the 5th Embodiment of this invention Sectional drawing of the solid-state imaging device concerning the 6th Embodiment of this invention Process sectional drawing which shows the 1st manufacturing method of the solid-state imaging device of this invention Schematic showing partial removal of the insulating film in the manufacturing method of FIG. Sectional drawing which shows the modification of the manufacturing method of FIG. Process sectional drawing which shows the 2nd manufacturing method of the solid-state imaging device of this invention Process sectional drawing which shows the 3rd manufacturing method of the solid-state imaging device of this invention Process sectional drawing which shows the 4th manufacturing method of the solid-state imaging device of this invention Sectional view of a conventional solid-state imaging device

Embodiments of the present invention will be described below with reference to the drawings. In each figure, the same components as those shown in FIG. 13 are given the same reference numerals as those in FIG.
FIG. 1 is a schematic sectional view of a solid-state imaging device according to a first embodiment of the present invention. A plurality of light receiving portions 1 made of photodiodes (PD) are formed on a silicon substrate S, a vertical CCD portion (not shown) is formed between them, and a horizontal CCD portion (not shown) connected to the vertical CCD portion. ) Is arranged.

  A gate insulating film 2 is formed on the silicon substrate S, and a transfer gate 3 is formed by being separated from the vertical CCD portion by the gate insulating film 2. A light shielding film having an opening 16 on each light receiving portion 1. 4 is formed. The light shielding film 4 covers the transfer gate 3 and prevents unnecessary light from entering the vertical CCD portion below the transfer gate 3.

  A light-transmitting insulating film 5 is formed on the light-shielding film 4 and in the opening 16, and on the insulating film 5 and above the light-receiving part 1 and the opening 16, a convex lens 6 ( Hereinafter, the in-layer downward convex lens 6) and the in-layer upward convex lens 7 are formed.

  Although other components and regions are not shown, an intermediate layer, a color filter, a microlens, and the like for adjusting the reflectance and the lens position are formed above the intra-layer upper convex lens 7. (See FIG. 2 described later). A lens (not shown) and a diaphragm 13 of the camera system are disposed above the solid-state imaging device.

  Accordingly, the light from the outside is condensed by the diaphragm 13, taken in by the microlens, transmitted through the color filter and the intermediate layer, and further condensed by the in-layer upper convex lens 7 and the in-layer lower convex lens 6 to be received by the light receiving unit 1. The charge is accumulated by photoelectric conversion in the light receiving unit 1.

  The electric charge accumulated in each light receiving portion 1 is transferred to the vertical CCD portion through a readout gate (not shown) by a potential applied to the transfer gate 3, and further transferred to the horizontal CCD portion by a potential sequentially applied to the transfer gate 3. In the horizontal CCD unit, the data is transferred in a predetermined direction, output from the amplifier unit, and processed as an image signal.

  At this time, incident light incident through the diaphragm 13 is irradiated on the entire imaging surface of the solid-state imaging device. However, as described above, the incident light is incident in a direction perpendicular to the light receiving surface of the light receiving unit 1 at the center of the imaging region. On the other hand, the angle formed with the perpendicular to the light receiving surface of the light receiving unit 1 increases as the distance from the center of the imaging region increases.

  For this reason, with respect to the light receiving unit 1 existing directly below the center of the stop 13 (usually referred to as the center of the imaging region since it is the center of the imaging region), the in-layer upward convex lens 7 and the in-layer downward convex lens 6 include hemispheres Are formed in a smooth and point-symmetrical shape (hereinafter referred to as a hemispherical shape) such as a shape of a part of the sphere, and with the apex and the lowest point at the center of the opening 16. Note that the “center” of the imaging region and the opening 16 means the center or the vicinity of the center.

  On the other hand, for each light receiving part 1 closer to the periphery than the center of the imaging region, the axis passing through the lowest point of the in-layer lower convex lens 6 (axis in the direction perpendicular to the light receiving surface) is shifted from the center of the opening 16. It is formed into a shape. The amount of deviation increases as the distance from the center of the imaging region increases.

  For example, for the right-side light receiving unit 1 in the figure, the opening 16 has a width of 0.6 μm, and the axis passing through the lowest point of the in-layer convex lens 6 is 0.2 μm from the center of the opening 16. It is formed in a shape shifted toward the part. The amount of deviation is appropriately about 50 nm to 300 nm. The in-layer upward convex lens 7 is shifted in position by using the scaling technique described above so that its apex is closer to the center of the imaging region than the center of the opening 16.

  By adopting such a structure, incident light is condensed near the center of the opening 16 by the in-layer upper convex lens 7 and then condensed near the center of the opening 16 by the in-layer lower convex lens 6. Therefore, the light is condensed near the center of the opening 16 not only at the center of the imaging area but also around the imaging area. Therefore, it is possible to improve the uniformity of sensitivity in the imaging surface and further suppress the in-plane variation of smear.

  However, a feature of the present invention is that, for the light receiving unit 1 closer to the periphery than the center of the imaging region, the in-layer lower convex lens 6 is formed in a shape in which its lowest point is shifted from the center of the opening 16 In this case, the in-layer upper convex lens 7 is not necessarily required as long as the light can be condensed near the center of the opening 16 only by the in-layer lower convex lens 6.

  In the solid-state imaging device according to the second embodiment of the present invention shown in FIG. 2, a color filter 17 and an upper-convex top lens 18 are provided above the upper convex lens 7 in each layer as compared with the solid-state imaging device shown in FIG. Are provided via an intermediate layer 19, and this upwardly convex top lens 18 is formed using a scaling technique.

  In the solid-state imaging device according to the third embodiment of the present invention shown in FIG. 3, the top lens 18 is hemispherical for the center of the imaging region as compared with the solid-state imaging device shown in FIG. The lens closer to the periphery than the center is formed by changing the lens curvature so that the uppermost point is shifted from the center of the opening 16. The amount of deviation increases as the distance from the center of the imaging region increases.

  In the solid-state imaging device according to the fourth embodiment of the present invention shown in FIG. 4, each light receiving unit 1 closer to the periphery than the center of the imaging region is compared with the solid-state imaging device shown in FIG. 1. 7 is formed in a shape in which the uppermost point is shifted from the center of the opening 16, that is, a shape in which the curvature is changed (or a shape in which the curvature is changed on the lens surface). The amount of deviation increases as the distance from the center of the imaging region increases.

  In the solid-state imaging device according to the fifth embodiment of the present invention shown in FIG. 5, the color filter 17 and the hemispherical upward convex type are provided above the upper convex lens 7 in each layer as compared with the solid-state imaging device shown in FIG. 4. The top lens 18 is provided via an intermediate layer 19, and the top convex top lens 18 is formed using a scaling technique.

  In the solid-state imaging device according to the sixth embodiment of the present invention shown in FIG. 6, the top lens 18 is hemispherical with respect to the center of the imaging region, as compared with the solid-state imaging device shown in FIG. 5. The lens closer to the periphery than the center is formed by changing the lens curvature so that the uppermost point is shifted from the center of the opening 16. The amount of deviation increases as the distance from the center of the imaging region increases.

By providing the in-layer upward convex lens 7 and the top lens 18 as described above, the light is condensed near the center of the opening 16 even around the imaging region.
The color filter 17 may be an RGB primary color or a complementary color, and can be selected according to the application of the camera system.

Next, a method for manufacturing a solid-state imaging device according to the present invention will be described.
FIG. 7 shows a first manufacturing method of the solid-state imaging device of the present invention. As shown in FIG. 7A, a desired impurity diffusion layer such as the light receiving portion 1 and the transfer path 12 is formed on the silicon substrate S by using ion implantation or a thermal diffusion technique in some cases, and then thermal oxidation or A gate insulating film 2 is deposited by a CVD (Chemical Vapor Deposition) method. The gate insulating film 2 may be a single oxide film or a laminated film of two or more layers including an oxide film and a nitride film.

  Thereafter, a film to be the transfer gate 3 is deposited by a CVD method and patterned by photolithography, an etching process, and the like. Next, a light shielding film 4 made of W or the like is formed by thermal oxidation, CVD, or etching technique so as to cover the transfer gate 3 and have the opening 16 on the light receiving portion 1. Further, after an insulating film such as NSG is deposited to 50 nm to 250 nm, a flowable insulating film 5 such as BPSG (Boro-Phospho-Silicate-Glass) is deposited. The insulating film 5 has a recess 5 a on the opening 16 depending on the thickness of the transfer gate 3.

  As shown in FIG. 7B, a resist 8 is applied on the insulating film 5, the resist 8 is patterned into a shape corresponding to the peripheral portion of the light receiving portion 1, and the resist 8 is masked. As a result, at least a part of the insulating film 5 is removed by an etching technique.

  As shown in FIG. 7C, the resist 8 is removed and the insulating film 5 is allowed to flow at 600 ° C. to 800 ° C., so that the removed portion and the surrounding portion are particularly depressed in the recess 5a. In other words, a shape in which the lowest point is shifted from the center of the opening 16 is obtained.

  As shown in FIG. 7D, on the insulating film 5, a material having a higher refractive index than that of BPSG, such as silicon oxide or silicon nitride (n = 1.5 to 2.2), has a first high refractive index. An insulating film 9 is deposited, and the upper portion thereof is planarized by an etch back technique or a CMP technique. The convex portion of the insulating film 9 becomes the above-mentioned lower convex lens 6 in the layer.

  Further, as shown in FIG. 7E, a second high-refractive-index insulating film 10 such as, for example, silicon oxide or silicon nitride (n = 1.5 to 2.2) is deposited, and is projected upward by an etch back technique. Form into a mold. The convex portion of the insulating film 10 becomes the above-mentioned upper convex lens 7 in the layer.

  FIGS. 8A and 8B schematically show partial removal of the insulating film 5 described above with reference to FIG. In order to change the shape of the in-layer lower convex lens 6 above each of the light receiving portions 1 in the imaging region, a punched portion of the resist 8 and a removed portion of the insulating film 5 (shown by a broken line) thereby are formed. The distance from the center of the aperture 16 is increased as the distance from the center of the imaging region increases.

  In place of the steps of FIGS. 7D and 7E, as shown in FIG. 9A, a material having a refractive index higher than that of BPSG, such as silicon oxide or silicon nitride, is formed on the flowed insulating film 5. An insulating film 9 made of (n = 1.5-2) is deposited to a thickness equal to or greater than the uppermost point of the above-mentioned intra-layer upward convex lens 7, and this is convex upward as shown in FIG. It may be formed into a mold. The in-layer lower convex lens 6 and the in-layer upper convex lens 7 are integrally formed at a time.

The in-layer lower convex lens 6 and the in-layer upper convex lens 7 have been illustrated and described as being a single layer, but the present invention is not limited to this and may be composed of a plurality of layers having different refractive indexes.
FIG. 10 shows a second manufacturing method of the solid-state imaging device of the present invention. As shown in FIG. 10A, after forming a desired impurity diffusion layer such as the light receiving unit 1 and the transfer path 12 on the silicon substrate S and depositing the gate insulating film 2, the transfer gate 3 and the opening 16 are formed. And a light shielding film 4 having Further, a flowable insulating film 5 is deposited thereon. The process up to this point is the same as described above with reference to FIG.

  Next, a resist 14 is applied on the insulating film 5, exposed and developed using a mask 11 that changes the light transmittance of a partial region called a gray scaling mask, and developed as shown in the figure. Resist patterns having partially different thicknesses are formed.

  Thereafter, etching is performed so that the selection ratio between the resist 14 and the insulating film 5 is 0.7 to 1.0, and the resist 14 is removed, and then the insulating film 5 is reflowed at 600 ° C. to 800 ° C. As a result, as shown in FIG. 10B, a part of the recess 5 a of the insulating film 5 is particularly depressed, and the lowest point is shifted from the center of the opening 16.

  Thereafter, as shown in FIG. 10C, an in-layer lower convex lens 6 made of the insulating film 9 and an in-layer upper convex lens 7 made of the insulating film 10 are previously used with reference to FIGS. 7D and 7E. In the same manner as described above, the in-layer lower convex lens 6 and the intra-layer upper convex lens 7 made of the insulating film 9 as shown in FIG. In the same manner as described with reference to (b), they are integrally formed at one time.

  FIG. 11 shows a third manufacturing method of the solid-state imaging device of the present invention. As shown in FIG. 11A, after forming a desired impurity diffusion layer such as the light receiving portion 1 and the transfer path 12 on the silicon substrate S and depositing the gate insulating film 2, the transfer gate 3 and the opening 16 are formed. And a light shielding film 4 having The process up to this point is the same as described above with reference to FIG.

  Next, as shown in the figure, an insulating film 15 is deposited, a resist (not shown) is applied to the insulating film 15, and the resist is patterned into a desired shape and film thickness using the mask 11, and after patterning As shown in FIG. 11B, the insulating film 15 is patterned by an etching technique so as to remain only on a part of the transfer gate 3 as shown in FIG.

  Next, an insulating film such as NSG is deposited to 50 nm to 250 nm, and a flowable insulating film 5 such as BPSG (Boro-Phospho-Silicate-Glass) is further deposited, and this insulating film 5 is deposited at 600 ° C. to 800 ° C. By flowing, a shape in which the lowest point of the recess 5a of the insulating film 5 is shifted from the center of the opening 16 as shown in the drawing is obtained. This shape is formed by the height of the insulating film 5 around the opening 16 being different depending on the insulating film 15.

  Thereafter, as shown in FIG. 11C, the in-layer lower convex lens 6 made of the insulating film 9 and the inner upper convex lens 7 made of the insulating film 10 are previously used with reference to FIGS. 7D and 7E. In the same manner as described above, the in-layer lower convex lens 6 and the intra-layer upper convex lens 7 made of the insulating film 9 as shown in FIG. In the same manner as described with reference to (b), they are integrally formed at one time.

  12A, 12B, and 12C show a fourth manufacturing method of the solid-state imaging device of the present invention. An insulating film 15 that remains only in a part on the transfer gate 3 is formed between the transfer gate 3 and the light shielding film 4. In this case, HTO, a thermal oxide film, or the like may be formed as the insulating film 15, and the choice of usable materials increases, so that the process becomes easy.

  Furthermore, without depositing and patterning the insulating film 15, the NSG or the like deposited prior to the flowable insulating film 5 is deposited thicker than the above film thickness (for example, 100 nm to 800 nm). The height around the opening 16 of the insulating film 5 formed thereon may be varied by etching so that only a part on the transfer gate 3 is thickened.

  As described above, the present invention is useful for improving the sensitivity and uniformity of a solid-state imaging device, improving smear characteristics, and the like.

DESCRIPTION OF SYMBOLS 1 Light-receiving part 2 Gate insulating film 3 Transfer gate 4 Light-shielding film 5 Flowing insulating film 6 In-layer lower convex lens 7 In-layer upper convex lens 9 Insulating film 10 Insulating film 11 Mask 12 Transfer path 13 Aperture 14 Resist 15 Insulating film 16 Opening Part 17 Color filter 18 Top lens S Silicon substrate

Claims (11)

A plurality of light-receiving portions that perform photoelectric conversion, a light-shielding film that covers an imaging region of the substrate on which the plurality of light-receiving portions are formed, and that is open above each light-receiving portion; In a solid-state imaging device including at least a convex lens,
The downward convex lens on the light receiving unit located at the center of the imaging region is symmetrical with respect to the axis so that the axis passing through the lens lowest point coincides with the center of the opening of the light shielding film. The bottom convex lens on the light receiving unit, which has a shape and is located closer to the periphery than the center of the imaging region, has the lowest lens point from the center of the opening of the light shielding film to the periphery of the imaging region A solid-state image pickup device, wherein the solid-state image pickup device is shifted toward the side, and the amount of shift is larger as each light receiving unit is moved away from the center of the image pickup region.   An upward convex lens is formed above each of the downward convex lenses, and the upward convex lens has a symmetrical shape centered on an axis passing through the uppermost point of the lens. The solid-state imaging device according to claim 1.   An upward convex lens is formed above each of the downward convex lenses, and the upward convex lens has a symmetrical shape centered on an axis passing through the uppermost point of the lens. In the upwardly convex lens on the light receiving portion located at the center of the light receiving portion, the lens uppermost point coincides with the center of the opening of the light shielding film, and is located closer to the periphery than the center of the imaging region. In the upward convex lens on the light receiving unit, the uppermost point of the lens is shifted from the center of the opening of the light shielding film toward the center of the imaging region. The solid-state imaging device according to claim 1, wherein the solid-state imaging device increases as the distance from the center increases.   An upward convex lens is formed above each of the downward convex lenses, and the upward convex lens on the light receiving portion located at the center of the imaging region passes through the lens top point. The axis coincides with the center of the opening of the light-shielding film, has a symmetrical shape with the axis as the center, and is convex upward on the light-receiving unit located closer to the periphery than the center of the imaging region In this lens, the uppermost point of the lens is shifted from the center of the opening of the light shielding film toward the center of the imaging region, and the amount of shift increases as each light receiving unit moves away from the center of the imaging region. The solid-state imaging device according to claim 1.   5. The solid-state imaging device according to claim 1, wherein a color filter and a top lens are formed above each of the lower convex lenses. 6.   The top lens on the light receiving unit located at the center of the imaging region has the lens uppermost point coincident with the center of the opening of the light shielding film, and is located closer to the periphery than the center of the imaging region The top lens of the upper lens has its lens top point shifted from the center of the opening of the light shielding film toward the center of the imaging region, and the amount of shift is as each light receiving unit moves away from the center of the imaging region. 6. The solid-state imaging device according to claim 5, wherein the solid-state imaging device is large. Forming a plurality of light receiving portions in an imaging region of the substrate; forming a light shielding film having an opening above each of the plurality of light receiving portions on the substrate; and above each of the plurality of light receiving portions. Forming a first insulating film having a concave shape on the light shielding film, and forming a second insulating film having a refractive index higher than that of the first insulating film on the first insulating film. And
In the step of forming the first insulating film, the lowermost point of the concave shape is positioned at the center of the opening of the light shielding film at the center of the imaging region. A manufacturing method of a solid-state imaging device, characterized in that the lowest point of the concave shape located closer to the periphery than the center is formed so as to be shifted to the outside of the imaging region from the center of the opening of the light shielding film.   The step of forming the first insulating film is positioned closer to the periphery than the center of the imaging region, and the step of forming a flowable insulating film having a concave portion along the surface shape on the light shielding film. The method for manufacturing a solid-state imaging device according to claim 7, comprising a step of removing each part of the concave shape portion near the periphery of the imaging region and a step of flowing the flowable insulating film. .   The step of forming the first insulating film includes a step of forming a first flowable insulating film having a concave portion along the surface shape on the light shielding film, and a step closer to the periphery than the center of the imaging region. Forming a second flow insulating film on the concave portion located at a position near the center of the imaging region; and the first flow insulating film and the second flow insulating film. The method of manufacturing a solid-state imaging device according to claim 7, further comprising a flow step.   Before the step of forming the first insulating film, a convex pattern is formed on the light-shielding film closer to the center of the imaging region than the light-receiving unit for each light-receiving unit located closer to the periphery than the center of the imaging region. The method of manufacturing a solid-state image pickup device according to claim 7, further comprising a step of forming.   Before the step of forming the light shielding film, a step of forming a convex pattern on the substrate closer to the center of the imaging region than the light receiving unit for each light receiving unit located closer to the periphery than the center of the imaging region The solid-state imaging device manufacturing method according to claim 7, further comprising:

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