WO2014135209A1 - Apparatus for high side transistor bridge driver - Google Patents

Apparatus for high side transistor bridge driver Download PDF

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Publication number
WO2014135209A1
WO2014135209A1 PCT/EP2013/054526 EP2013054526W WO2014135209A1 WO 2014135209 A1 WO2014135209 A1 WO 2014135209A1 EP 2013054526 W EP2013054526 W EP 2013054526W WO 2014135209 A1 WO2014135209 A1 WO 2014135209A1
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WO
WIPO (PCT)
Prior art keywords
driver
power
isolation
controlling
isolated
Prior art date
Application number
PCT/EP2013/054526
Other languages
French (fr)
Inventor
Janez Trontelj
Gregor ERGAVER
Jurij Podrzaj
Aleksander Sesek
Original Assignee
SiEVA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SiEVA filed Critical SiEVA
Priority to DE112013006773.0T priority Critical patent/DE112013006773T5/en
Priority to PCT/EP2013/054526 priority patent/WO2014135209A1/en
Publication of WO2014135209A1 publication Critical patent/WO2014135209A1/en

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/081—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters wherein the phase of the control voltage is adjustable with reference to the AC source
    • H02M1/082—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters wherein the phase of the control voltage is adjustable with reference to the AC source with digital control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load

Definitions

  • the invention relates to a power stage of various products in power electronics. These products consists of half bridge or of full bridge switches configuration. Isolated drivers are used to control, monitor the performance of power switches, especially such drivers are required in power systems where switching at high voltages is performed. Some of the prior art solutions introduce different realizations of isolated drivers where some offers integrated control and safety features, features which offer a higher level of controlling of the switching devices (e.g. detecting faults, temperature
  • This patent introduces a new method of isolation driver realization which comprises both isolation features and controlling signals for connected high voltage devices. Besides ensuring high galvanic isolation between the controlling circuit and driver the proposed solution also introduces a solution how required electrical energy for isolated driver power supply is provided. Both, transmission path (controlling signals) and power supply path from/to isolation driver is realized with coupled resonance circuit. This new method using coupled resonance circuit provides several advantages compared to known solutions.
  • Potential barrier is used to separate two or more electrical circuits which operate on different potential in regard of avoiding uncontrolled circuit/components voltage breakdowns. This is often accomplished by using magnetically coupled coils, capacitive coupled lines or optocouplers.
  • the power supply for secondary circuit must also be isolated or potentially separated from primary circuit power supply, which is usually realized with transformer.
  • Primary side in power electronics usually consists of the microcontroller unit, where implemented algorithm generates appropriate control signals (e.g. PWM signals) and of the secondary side which contains the driver connected to power switches of the power stage.
  • Gate driver circuit is designed for optimal control of half bridge switches.
  • the driver in some prior- art solutions is also employed as a monitor for power switch parameters (e.g. current, voltage capabilities and temperature). Parameters are monitored to keep the power device within the specified safe operating area SOA. Potential barrier has significant influence on secondary side circuitry, reliability, immunity, emissions and cost.
  • Patent US 2008/0068062 Al introduces a method intended for transmitting signals from primary side to secondary side via magnetically coupled coils. It also provides means of controlling drivers on primary side and detecting sent signals on secondary side by integrated circuit.
  • Patent GB 2 293 933 A describes a method of controlling IGBT switch by transformer- coupled FET driver.
  • Transformer provides a mean of transporting energy and signal to switch IGBT.
  • This approach is that switching performance of IGBT, temperature, overcurrent, short-circuit detection, open-circuit detection cannot be monitored and therefore the possibility of implementing safety functions is very limited.
  • Patent GB 2474476 A presents method transferring electrical energy and controlling signals using the approach with capacitive coupling.
  • the capacitive coupling is realized by using two or more parallel PCB metal layers.
  • the main purpose of this solution is to provide signal paths for digital feedback from secondary side to primary driving side. This method is cheaper and less power consuming alternative to conventional capacitor, transformers or opto-isolators, but galvanic isolated power supply is still needed.
  • Patent US 2010/0019808 Al shows driving circuit for controlling power
  • Driver circuit controls power semiconductor element with switchable high and low resistance resistor, which is serially added to gate and thus reducing surge voltage and switching loss.
  • Control circuit switches high or low resistance resistor by monitoring power semiconductor voltage. Again isolated power supply has to be realized separately.
  • Patent EP 1 814 273 A2 shows input and output isolation with combination of optocoupling in one branch and capacitor coupling in other branch of input and output.
  • the isolation offers only routing signal over the potential barrier.
  • the solution with optocoupler requires high power densities in order to ensure acceptable propagation time delays and adequate quality of the transmitted signal from input to output.
  • the first signal galvanic isolation is realized with optocoupler, and the second additional signal transmission path is realized with galvanic isolation component (e.g. capacitor).
  • the second transmission path realized with capacitor is mainly used for transmitting the dynamic part(s) of the signal so that high power densities for supplying the optocoupler could be optimized.
  • Patent WO 2008/024839 A2 presents an integrated bidirectional capacitive galvanic isolation by capacitive coupled differential signal line. This method improves the common-mode rejection ratio is improved.
  • the capacitive coupling can be integrated into common package. Any type of structure located close to signal links can also be used to create proper differential capacitive coupling or just fine tune it. Isolated power supply is needed.
  • Patent US 2012/0002377 Al presents a novel in galvanic isolation using a transformer integrated on silicon. It proposes integrated transformer within integrated driver circuit itself. The integrated transformer provides a potential barrier between primary and secondary circuit. Proper design of integrated circuit is needed to insure galvanic isolation of high voltage. Special attention should be paid in order to minimize any leakage currents and to prevent dielectric breakdown to the substrate. Quartz wafer is used in process to remove breakdown from high voltage transformer winding to substrate.
  • Patent EP 2 387 154 A 1 shows alternative for potential barrier created by capacitive H- bridge.
  • Proposed circuit is intended for MOSFET controlling. No transistor parameters can be monitored with this circuit.
  • Problem of the solution is capacitor value difference, which creates common-mode interference.
  • the proposed solution is suitable only for transmitting signal pulses.
  • the capacitance ratio and the absolute capacitance of the capacitors in H bridge determine the maximum pulse duration (pulse width).
  • the main advantage of the proposed method is in low electrical energy consumption and low price (meant as price compared of four standard capacitors in relation to the galvanic solutions realized whether with optical or inductive isolation).
  • the solution also enables a space optimization needed for realization and on the other hand also promises longer live time of the system.
  • the main disadvantage in the proposed method is that the maximum "allowable" pulse duration of transmitted signals are direct depended of the H bridge component capacitance selection.
  • Patent US 7,535,303 Bl shows a method for providing electrical power through two terminals to load with feedback circuit.
  • Feedback circuit controls AC voltage on load by sensing voltage across sensing capacitor. The voltage is substantially increased at resonance frequency. Circuit damps voltage increase at resonance frequency and thus decreases excessive load voltage. Circuit does not offer signal transmitting.
  • the patent DE 10 2010 029 470 Al proposes a method for galvanic isolation with the use of two magnetic coils constructed on an insulated, low dielectric losses substrate. On each magnetic coil a pulse detector is connected.
  • CLT Coreless Transformer
  • piezoelectric transformer Usage of piezoelectric transformer is also known as an alternative to transformer with magnetic core [Dejan Vasic, Francois Costa, Emmanuel Sarraute, "Piezoelectric Transformer for Integrated MOSFET and IGBT Gate Driver", IEEE Transactions on Power Electronics, Vol. 21, No. 1 , January 2006].
  • Piezoelectric transformer presented in the paper is used to isolate microcontroller low voltage side from power stage half bridge together with a solution how to transfer energy from primary to secondary side to control half bridge switches. Amplitude modulation with proper carrier frequency is chosen for optimal energy transfer.
  • Amplitude modulation with proper carrier frequency is chosen for optimal energy transfer.
  • the goal of the invention is to propose a method of providing interface between low voltage microcontroller unit and power components.
  • the method provides required electrical power to the smart driver and also provides a communication link between smart driver and microcontroller.
  • Proposed method optimizes production costs, decreases number of components, reduces electromagnetic interference and increases electromagnetic immunity of power stage.
  • the isolated driver for power stages is used at high voltage systems, because the source of the high-side transistor of the half bridge is connected between high positive potential of the system power supply and floating potential (e.g. phase of the 3-phase motor).
  • Galvanic isolation is used to protect low voltage microcontroller side from damages that could occur during high voltage switching of the power transistor in power stage.
  • the coupled LC resonant circuit provides a galvanic separation and energy transfer from primary, low voltage control side, to secondary, high voltage power stage side.
  • Smart driver provides performance optimized switch driving, switch performance monitoring, fault detection, overcurrent detection, short current detection and also good energy management. The use of expensive DC-DC converter with transformer is therefore avoided.
  • FIG. 1 block scheme of proposed invention
  • Fig. 2 block scheme of the functions of Smart Driver.
  • Modulator/Demodulator that modulates microcontroller signal with carrier frequency fO, defined by LI, CI, and demodulates signal from smart driver
  • Coupled LC circuit that provides means to galvanic isolate primary side and secondary side and to transfer energy and signal.
  • Smart driver receives and demodulates signals from microcontroller
  • Modulator/ Demodulator block generates high frequency carrier (e.g. 13,65MHz). On this carrier low frequency information is uploaded as amplitude modulation (small modulation index ⁇ 3%). Modulated signal is provided to first communication coil on primary side. Information is send via galvanic isolated coupled inductors (two vertically aligned coils placed on two printed circuit board layers). At second coil of resonant circuit, signal is received and provided to Smart Driver.
  • high frequency carrier e.g. 13,65MHz
  • amplitude modulation small modulation index ⁇ 3%
  • Modulated signal is provided to first communication coil on primary side. Information is send via galvanic isolated coupled inductors (two vertically aligned coils placed on two printed circuit board layers). At second coil of resonant circuit, signal is received and provided to Smart Driver.
  • Smart Driver has integrated several functions, shown on figure 2.
  • the first function is demodulation of received signal with envelope detector and filtering.
  • the second function is driving external high voltage high side transistor switch.
  • Very important functionality is storage of received energy to an external capacitor CST, which is needed for Smart driver operation.
  • Voltage on the storage capacitor CST can be higher as smart driver includes also voltage regulators.
  • Driver needs two voltage levels for operation - first is internal driver voltage Vddi in the range from 3.3V to 5V, needed for integrated circuit operation, second voltage is required for switching signals for the high voltage power transistor driving (e.g. 10V).
  • the ratio of the power transistor gate capacitance (e.g. lOnF) and external capacitor CST must be 100 or more (e.g.
  • Smart driver also offers many other functions as over voltage protection, over current protection, over temperature monitoring and shut down etc.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention relates to a power stage of various products in power electronics. These products consists of half bridge or of full bridge switches configuration. Isolated drivers are used to control, monitor the performance of power switches, especially such drivers are required in power systems where switching at high voltages is performed. Some of the prior art solutions introduce different realizations of isolated drivers where some offers integrated control and safety features, features which offer a higher level of controlling of the switching devices (e.g. detecting faults, temperature measurements). This patent introduces a new method of isolation driver realization which comprises both isolation features and controlling signals for connected high voltage devices. Besides ensuring high galvanic isolation between the controlling circuit and driver the proposed solution also introduces a solution how required electrical energy for isolated driver power supply is provided. Both, transmission path (controlling signals) and power supply path from/to isolation driver is realized with coupled resonance circuit. This new method using coupled resonance circuit provides several advantages compared to known solutions.

Description

Description
Apparatus for high side transistor bridge driver
The invention relates to a power stage of various products in power electronics. These products consists of half bridge or of full bridge switches configuration. Isolated drivers are used to control, monitor the performance of power switches, especially such drivers are required in power systems where switching at high voltages is performed. Some of the prior art solutions introduce different realizations of isolated drivers where some offers integrated control and safety features, features which offer a higher level of controlling of the switching devices (e.g. detecting faults, temperature
measurements). This patent introduces a new method of isolation driver realization which comprises both isolation features and controlling signals for connected high voltage devices. Besides ensuring high galvanic isolation between the controlling circuit and driver the proposed solution also introduces a solution how required electrical energy for isolated driver power supply is provided. Both, transmission path (controlling signals) and power supply path from/to isolation driver is realized with coupled resonance circuit. This new method using coupled resonance circuit provides several advantages compared to known solutions. Prior art description
Potential barrier is used to separate two or more electrical circuits which operate on different potential in regard of avoiding uncontrolled circuit/components voltage breakdowns. This is often accomplished by using magnetically coupled coils, capacitive coupled lines or optocouplers. The power supply for secondary circuit must also be isolated or potentially separated from primary circuit power supply, which is usually realized with transformer.
Applications using previously described isolation are found in high voltage power electronics' driver circuits for power stages. Primary side in power electronics usually consists of the microcontroller unit, where implemented algorithm generates appropriate control signals (e.g. PWM signals) and of the secondary side which contains the driver connected to power switches of the power stage. Gate driver circuit is designed for optimal control of half bridge switches. The driver in some prior- art solutions is also employed as a monitor for power switch parameters (e.g. current, voltage capabilities and temperature). Parameters are monitored to keep the power device within the specified safe operating area SOA. Potential barrier has significant influence on secondary side circuitry, reliability, immunity, emissions and cost.
Patent US 2008/0068062 Al introduces a method intended for transmitting signals from primary side to secondary side via magnetically coupled coils. It also provides means of controlling drivers on primary side and detecting sent signals on secondary side by integrated circuit.
Patent GB 2 293 933 A describes a method of controlling IGBT switch by transformer- coupled FET driver. Transformer provides a mean of transporting energy and signal to switch IGBT. Downfall of this approach is that switching performance of IGBT, temperature, overcurrent, short-circuit detection, open-circuit detection cannot be monitored and therefore the possibility of implementing safety functions is very limited. Patent GB 2474476 A presents method transferring electrical energy and controlling signals using the approach with capacitive coupling. The capacitive coupling is realized by using two or more parallel PCB metal layers. The main purpose of this solution is to provide signal paths for digital feedback from secondary side to primary driving side. This method is cheaper and less power consuming alternative to conventional capacitor, transformers or opto-isolators, but galvanic isolated power supply is still needed.
Patent US 2010/0019808 Al shows driving circuit for controlling power
semiconductor element. Driver circuit controls power semiconductor element with switchable high and low resistance resistor, which is serially added to gate and thus reducing surge voltage and switching loss. Control circuit switches high or low resistance resistor by monitoring power semiconductor voltage. Again isolated power supply has to be realized separately.
The paper of Raha Vafaei et al.,"Experimental Investigation of an Integrated Optical Interface for Power MOSFET drivers", IEEE Electron Device Letters, Vol. 33, No. 2, February 2012, investigates controlling the modified MOSFET directly with light. Authors present integrated photo receivers within power MOSFET. Complex heterogeneous fabrication processes are required to modify Si power device to facilitate GaAs optical detector. Design also requires powerful laser source to deliver adequate amount of energy within relatively short amount of time to turn on and turn off the power device by laser light, which increases cost of the solution.
Patent EP 1 814 273 A2 shows input and output isolation with combination of optocoupling in one branch and capacitor coupling in other branch of input and output. The isolation offers only routing signal over the potential barrier. The solution with optocoupler requires high power densities in order to ensure acceptable propagation time delays and adequate quality of the transmitted signal from input to output. The first signal galvanic isolation is realized with optocoupler, and the second additional signal transmission path is realized with galvanic isolation component (e.g. capacitor). The second transmission path realized with capacitor is mainly used for transmitting the dynamic part(s) of the signal so that high power densities for supplying the optocoupler could be optimized.
Patent WO 2008/024839 A2 presents an integrated bidirectional capacitive galvanic isolation by capacitive coupled differential signal line. This method improves the common-mode rejection ratio is improved. The capacitive coupling can be integrated into common package. Any type of structure located close to signal links can also be used to create proper differential capacitive coupling or just fine tune it. Isolated power supply is needed.
Patent US 2012/0002377 Al presents a novel in galvanic isolation using a transformer integrated on silicon. It proposes integrated transformer within integrated driver circuit itself. The integrated transformer provides a potential barrier between primary and secondary circuit. Proper design of integrated circuit is needed to insure galvanic isolation of high voltage. Special attention should be paid in order to minimize any leakage currents and to prevent dielectric breakdown to the substrate. Quartz wafer is used in process to remove breakdown from high voltage transformer winding to substrate.
Patent EP 2 387 154 A 1 shows alternative for potential barrier created by capacitive H- bridge. Proposed circuit is intended for MOSFET controlling. No transistor parameters can be monitored with this circuit. Problem of the solution is capacitor value difference, which creates common-mode interference. The proposed solution is suitable only for transmitting signal pulses. The capacitance ratio and the absolute capacitance of the capacitors in H bridge determine the maximum pulse duration (pulse width). The main advantage of the proposed method is in low electrical energy consumption and low price (meant as price compared of four standard capacitors in relation to the galvanic solutions realized whether with optical or inductive isolation). The solution also enables a space optimization needed for realization and on the other hand also promises longer live time of the system. The main disadvantage in the proposed method is that the maximum "allowable" pulse duration of transmitted signals are direct depended of the H bridge component capacitance selection.
Patent US 7,535,303 Bl shows a method for providing electrical power through two terminals to load with feedback circuit. Feedback circuit controls AC voltage on load by sensing voltage across sensing capacitor. The voltage is substantially increased at resonance frequency. Circuit damps voltage increase at resonance frequency and thus decreases excessive load voltage. Circuit does not offer signal transmitting.
The patent DE 10 2010 029 470 Al proposes a method for galvanic isolation with the use of two magnetic coils constructed on an insulated, low dielectric losses substrate. On each magnetic coil a pulse detector is connected.
A novel Coreless Transformer (CLT) Technology is used in gate drivers and it's implemented on silicon. The introduced approach is only used for providing galvanic isolation to the control signals. The main disadvantage of mentioned approach is the lack of required isolated power source for the driver which has to be realized separately. This is usually done by using isolating transformers.
Usage of piezoelectric transformer is also known as an alternative to transformer with magnetic core [Dejan Vasic, Francois Costa, Emmanuel Sarraute, "Piezoelectric Transformer for Integrated MOSFET and IGBT Gate Driver", IEEE Transactions on Power Electronics, Vol. 21, No. 1 , January 2006]. Piezoelectric transformer presented in the paper is used to isolate microcontroller low voltage side from power stage half bridge together with a solution how to transfer energy from primary to secondary side to control half bridge switches. Amplitude modulation with proper carrier frequency is chosen for optimal energy transfer. Experiment confirms the proposed method and shows good switching performance. Background of the invention
The goal of the invention is to propose a method of providing interface between low voltage microcontroller unit and power components. The method provides required electrical power to the smart driver and also provides a communication link between smart driver and microcontroller. Proposed method optimizes production costs, decreases number of components, reduces electromagnetic interference and increases electromagnetic immunity of power stage.
The isolated driver for power stages is used at high voltage systems, because the source of the high-side transistor of the half bridge is connected between high positive potential of the system power supply and floating potential (e.g. phase of the 3-phase motor). Galvanic isolation is used to protect low voltage microcontroller side from damages that could occur during high voltage switching of the power transistor in power stage.
Commonly floating power supply is built using the power supply transformer, which is expensive, difficult to handle high voltage and also often causes problems regarding EMC emerge. Switching signals from microcontroller are transferred to smart driver by high voltage capacitive coupling, magnetic coupling or piezoelectric effect. Smart driver controls switching of the power transistor and has built in some safety functions.
Detailed Description
The coupled LC resonant circuit provides a galvanic separation and energy transfer from primary, low voltage control side, to secondary, high voltage power stage side. Smart driver provides performance optimized switch driving, switch performance monitoring, fault detection, overcurrent detection, short current detection and also good energy management. The use of expensive DC-DC converter with transformer is therefore avoided. The invention will now be explained in more detail by way of the description embodiment and with the reference to accompanying drawings representing:
Fig. 1 block scheme of proposed invention, and
Fig. 2 block scheme of the functions of Smart Driver.
Proposed solution is presented in Fig. 1 and consists of three basic components:
• Modulator/Demodulator that modulates microcontroller signal with carrier frequency fO, defined by LI, CI, and demodulates signal from smart driver
• Coupled LC circuit that provides means to galvanic isolate primary side and secondary side and to transfer energy and signal.
• Smart driver receives and demodulates signals from microcontroller and
transmits acquired monitor information to the microcontroller. It also drives transistor switches and monitors their condition.
Modulator/ Demodulator block generates high frequency carrier (e.g. 13,65MHz). On this carrier low frequency information is uploaded as amplitude modulation (small modulation index ~3%). Modulated signal is provided to first communication coil on primary side. Information is send via galvanic isolated coupled inductors (two vertically aligned coils placed on two printed circuit board layers). At second coil of resonant circuit, signal is received and provided to Smart Driver.
Smart Driver has integrated several functions, shown on figure 2. The first function is demodulation of received signal with envelope detector and filtering. The second function is driving external high voltage high side transistor switch. Very important functionality is storage of received energy to an external capacitor CST, which is needed for Smart driver operation. Voltage on the storage capacitor CST can be higher as smart driver includes also voltage regulators. Driver needs two voltage levels for operation - first is internal driver voltage Vddi in the range from 3.3V to 5V, needed for integrated circuit operation, second voltage is required for switching signals for the high voltage power transistor driving (e.g. 10V). The ratio of the power transistor gate capacitance (e.g. lOnF) and external capacitor CST must be 100 or more (e.g. luF) in order to ensure minimal amplitude drop during switching events. Last important function is sending monitored information about switch status back to microcontroller unit. Communication is done similar than previous. The information is now formed as impedance variations of the smart driver receive/transmit nodes. Smart driver also offers many other functions as over voltage protection, over current protection, over temperature monitoring and shut down etc.

Claims

Claims
1. Apparatus for high side transistor bridge driver, whereby a inductively coupled resonance circuit is arranged, which enables continuous time high frequency energy transfer.
2. Apparatus according to claim 1, whereby a smart driver is arranged providing full wave rectifier with built-in amplitude detector for transistor switch driving signal generation.
3. Apparatus according to claim 1 or 2, whereby a managing device for energy optimized switching by managing charge transfer between switching transistor gate capacitance and storage capacitor capacitance is arranged.
4. Apparatus according to claim 1, 2 or 3, whereby the apparatus is equipped with a device for half duplex communication with amplitude modulation with coupled coils.
PCT/EP2013/054526 2013-03-06 2013-03-06 Apparatus for high side transistor bridge driver WO2014135209A1 (en)

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Application Number Priority Date Filing Date Title
DE112013006773.0T DE112013006773T5 (en) 2013-03-06 2013-03-06 Device for high-side transistor bridge driver
PCT/EP2013/054526 WO2014135209A1 (en) 2013-03-06 2013-03-06 Apparatus for high side transistor bridge driver

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Application Number Priority Date Filing Date Title
PCT/EP2013/054526 WO2014135209A1 (en) 2013-03-06 2013-03-06 Apparatus for high side transistor bridge driver

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WO2017070103A1 (en) * 2015-10-22 2017-04-27 General Electric Company Isolated control circuit and driver for micro-electromechanical system switch
CN110907042A (en) * 2019-11-21 2020-03-24 深圳供电局有限公司 Transformer temperature rise monitoring device and system
WO2021034964A1 (en) 2019-08-20 2021-02-25 Oregon Health & Science University Modulation of t cell responses by ul18 of human cytomegalovirus
WO2024069451A1 (en) * 2022-09-28 2024-04-04 Delphi Technologies Ip Limited Systems and methods for integrated gate driver for inverter for electric vehicle

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DE102017105140B3 (en) 2017-03-10 2018-06-14 Pierburg Gmbh Method for controlling a controller

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GB2474476A (en) 2009-10-15 2011-04-20 Gigle Semiconductor Ltd An isolating capacitor using a PCB layer as a dielectric
EP2387154A1 (en) 2010-05-12 2011-11-16 Aquametro AG Switch for galvanic separation of electricity circuits
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GB2293933A (en) 1994-09-27 1996-04-10 Abb Industry Oy Transformer-coupled IGBT and FET driver
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US20040232971A1 (en) * 2003-03-06 2004-11-25 Denso Corporation Electrically insulated switching element drive circuit
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DE102005025705B3 (en) * 2005-06-04 2006-06-08 Semikron Elektronik Gmbh & Co. Kg Control switch for power semiconductor in bridge topology has signal transmitter and dc to dc converter between primary and secondary sides and error and status signaling
EP1768257A1 (en) * 2005-09-27 2007-03-28 Marvell World Trade Ltd High voltage high side transistor driver
EP1814273A2 (en) 2006-01-26 2007-08-01 VEGA Grieshaber KG Circuit arrangement for galvanic isolation of signal lines
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