WO2014127569A1 - 掩模板 - Google Patents

掩模板 Download PDF

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Publication number
WO2014127569A1
WO2014127569A1 PCT/CN2013/074138 CN2013074138W WO2014127569A1 WO 2014127569 A1 WO2014127569 A1 WO 2014127569A1 CN 2013074138 W CN2013074138 W CN 2013074138W WO 2014127569 A1 WO2014127569 A1 WO 2014127569A1
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WO
WIPO (PCT)
Prior art keywords
slit
corner
concave arc
arc
mask plate
Prior art date
Application number
PCT/CN2013/074138
Other languages
English (en)
French (fr)
Inventor
黎午升
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP13852352.7A priority Critical patent/EP2960717B1/en
Priority to US14/357,650 priority patent/US9158193B2/en
Publication of WO2014127569A1 publication Critical patent/WO2014127569A1/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Definitions

  • Embodiments of the present invention relate to the field of displays and semiconductor manufacturing, and more particularly to a mask. Background technique
  • the size of the pixel is gradually decreasing, and in order to maintain the aperture ratio, the line width of the pixel metal electrode and the color film black matrix is also required to be narrower. Due to the diffraction effect of light, in a conventional lithography process, it is difficult to achieve a narrow line width process.
  • the current method of achieving a narrow line width is a method of achieving a narrow line width by a zigzag slit, as shown in FIG. 1; adjusting the line by adjusting the width a, the gap b, and the angle ⁇ Wide size.
  • the advantage of this method is that it only needs to change the pattern design of the mask slit to achieve a narrow line width, but the disadvantage is that there are more burrs, not smooth enough, and lack of corner design.
  • a straight-line design and a zigzag design are often combined, that is, a straight line design is not required for a narrow line width direction, and a narrow line width direction is required to use a zigzag design and inserted into a straight line, as shown in FIG. Shown. Due to the lack of a smooth connection design at the joints of the two designs, the line width at the corners is too thin to be easily etched, resulting in poor wire breakage. In addition, when a narrow line width design is required in both directions, the design of Fig. 2 cannot satisfy the requirement of narrow line width in both directions. Summary of the invention
  • embodiments of the present invention provide a reticle including an opaque region and a slit-like light transmissive region, the slit having two opposite edges, wherein each edge is composed of a plurality of Consisting of continuous arcs.
  • the plurality of concave arcs of the two edges of the slit are symmetrical along a central axis, and the concave arc is preferably a semi-circular arc.
  • the slit includes a first slit and a second slit, the first slit and the second slit form a corner, and the first slit and the second slit are concave through the corner Arc connection.
  • the corner includes an inner corner and an outer corner
  • the first slit and the second slit are connected at a corner by a concave arc of an inner corner and a concave arc of an outer corner.
  • the inner angular arc connects the two end points of the circular arc located on both sides of the inner corner closest to the inner corner to each other.
  • outer corner concave arc connects the two end points of the concave arc which are closest to the outer corner and are located on both sides of the outer corner.
  • the central axes of the first and second slits are the same central axis.
  • connecting arc connecting the first slit and the second slit is a quarter arc having a radius of a half of the difference between the first slit and the second slit.
  • FIG. 1 is a schematic structural view of a slit of a mask in the prior art
  • FIG. 2 is a schematic view showing a connection structure of a linear slit and a zigzag slit in the prior art
  • FIG. 3 is a schematic structural view of a mask according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a slit corner of a mask of an embodiment of the present invention.
  • FIG. 5 is a schematic structural view of a mask corner of the embodiment of the present invention at 180 degrees;
  • Figure 6 is a schematic view showing the structure in which concave arcs overlap each other when the corners of the mask are too small;
  • Fig. 7 is a structural schematic view showing the corner of the mask of the embodiment of the present invention being too small. detailed description
  • the mask of the embodiment of the present invention is as shown in FIG. 3, the mask includes an opaque region B and a slit-shaped transparent region T, and the slit is provided on the mask plate, and the slit has two opposite edges, that is, The upper and lower edges e upper and e lower in Fig. 3, each edge is composed of a plurality of continuous concave arcs (i.e., a plurality of concave arcs are connected to each other), the two edges e upper , ei .
  • the concave and convex positions of the correspond to each other, and the concave arcs of the upper and lower edges are symmetrical along the central axis of the slit direction.
  • the concave arc is a semi-circular arc
  • the radius of the semi-circular arc is R
  • the radius R of the concave arc is, for example, less than 0.5 ⁇ m, preferably 0.3 ⁇ m, and two straight lines formed through the ends of the semicircular arcs.
  • the distance between the tangent lines of the inner diameter is the inner diameter of the slit (for example, the inner diameters A1, A2 in Fig. 4).
  • the slit includes a first slit and a second slit, and a corner is formed between the first slit and the second slit, and the two are connected by a concave arc.
  • the angle of the corner is an angle formed between the center line of the first slit and the center line of the second slit, for example, ⁇ .
  • the corners are divided into an inner corner and an outer corner.
  • the first and second slits pass through the inner angular arc C mnCT and the outer corner concave arc C at the corner.
  • the radii of the concave arcs are respectively denoted as R1 and R2, wherein the inner diameters A1 and A2 may be the same or different, and the concave arc radii R1 and R2 may be the same or different.
  • the inner angular arc C inner is a radius centered on the inner corner apex
  • the average radius of the arc radii R1 and R2 is a radius (ie, a radius R1 and a second narrow radius of the concave arc of the first slit)
  • the average value of the radius R2 of the concave arc is a concave arc with a curvature of ⁇ .
  • Inner angle two The continuous EJ-shaped arc curves on the side respectively start from the ends of the inner angular arc C mner and extend to the both sides along the tangent of the inner diameter on both sides of the inner corner.
  • the center, the radius and the curvature of the concave arc C mner of the inner corner are not limited to those described in the embodiment, and those skilled in the art can perform various transformations as long as the slit corners are smoothly connected as long as the inner corner concave arc C mner connects the two end points of the concave arc located on both sides of the inner corner closest to the inner corner to each other.
  • the W-shaped arc curves on both sides of the outer corner respectively extend along the inner diameter tangents of the outer corners to the outer corner vertices, and the concave arc curves on both sides of the outer corners are extended to a distance from the outer corner vertices to be smaller than the diameter of the respective concave arcs, and the outer corners are stopped.
  • the uter is a concave semi-circular arc whose diameter is a distance between the ends of the stop at the concave arc curve.
  • the outer corner is concave arc C.
  • the radius and the radiance of the uter are not limited to those described in the embodiment, and those skilled in the art can perform various transformations as long as the slit corners are smoothly connected as long as the outer corners are concave arc c.
  • the uter connects the two end points of the concave arc closest to the outer corner and located on both sides of the outer corner.
  • the embodiment of the present invention provides a mask, which has the same structure as that of Embodiment 1, except that the outer corner is concave arc c.
  • the uter is an outer arc of the vertex at the end of the concave arc curve on both sides of the outer corner and the vertex of the outer corner is the vertex.
  • Embodiments of the present invention provide a mask having a structure substantially the same as that of Embodiment 1 and Embodiment 2, except that: the corner angle ⁇ is 180 degrees, and the central axes of the first and second slits are the same center.
  • the shaft as shown in Figure 5.
  • the inner diameters A1 and ⁇ 2 of the first and second slits are not equal, for example, in the case shown in FIG. 5, the inner diameter tangent and the boundary line of the slit having the smaller inner diameter intersect the two points D and E, and the connecting arc
  • D, E as the center
  • the radius of the two slits A1 and A2 is half of the radius of the quarter arc.
  • the connecting arc is not limited to that described in the embodiment, and those skilled in the art can perform various transformations as needed in the case where the slit corners are smoothly connected.
  • the embodiment of the present invention provides a mask, which has the same structure as that of Embodiment 1, except that when the corner angle is small and the concave arcs on both sides of the inner corner overlap each other, for example, as shown in FIG. 6, the overlapping portions are first removed. a concave arc, and then connecting the two end points of the first slit and the second slit at the inner end of the distance are connected to each other by the concave arc of the inner corner shown in FIG. 7, thereby achieving smoothing between the first and second slits. connection.
  • the concave arc of the inner corner is a concave arc having a radius of a radius of ⁇ from a vertex of the inner corner to a point of the concave arc closest to the inner corner.
  • the slit is formed by a continuous concave arc, and the slits are smoothly connected at the corners of the slit, thereby achieving not only a narrow line width but also a smooth line width without burrs, thereby ensuring the line width.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种掩模板，包括不透光区和狭缝透光区，狭缝具有两个相对的边缘，每个边缘由多个连续的凹状圆弧构成。

Description

掩模板 技术领域
本发明的实施例涉及显示器及半导体制造领域， 特别涉及一种掩模板。 背景技术
随着高分辨率显示技术的发展， 像素的尺寸在逐渐减小， 为了保持开口 率， 像素金属电极和彩膜黑矩阵线宽也要求更窄。 由于光的衍射效应， 在传 统的光刻工艺中， 4艮难实现窄线宽工艺。
为了克服这一效应的影响， 目前实现窄线宽的方法是通过锯齿形狭缝来 实现窄线宽的方法， 如图 1所示； 通过调节宽度 a、 间隙 b以及夹角 Θ , 来 调节线宽的大小。 这种方法的优点是只需要更改掩模狭缝的格局设计就能实 现窄线宽的效果， 但缺点是毛刺较多， 不够平滑， 且缺乏拐角设计。 实际上， 往往采取直线型设计与锯齿形设计相结合的方式， 即不需要窄线宽的方向使 用直线型设计而需要窄线宽的方向使用锯齿形设计并将其插入直线型， 如图 2所示。 两种设计的连接处因缺少平滑连接设计导致拐角处线宽过细易被刻 蚀最终导致断线不良。 另外， 当两个方向都需要窄线宽设计时， 图 2的设计 无法满足两个方向均需窄线宽的要求。 发明内容
因此， 本发明的实施例提供了一种掩模板， 所述掩模板包括不透光区和 狭缝状透光区， 所述狭缝具有两个相对的边缘， 其中， 每个边缘由多个连续 的 状圓弧构成。
在一个实施例中， 所述狭缝两个边缘的多个凹状圓弧的沿中心轴对称， 该凹状圓弧优选为半圓弧。
在一个实施例中， 所述狭缝包括第一狭缝和第二狭缝， 所述第一狭缝与 第二狭缝形成一拐角， 所述第一狭缝与第二狭缝通过拐角凹状圓弧连接。
进一步地， 所述拐角包括内角和外角， 所述第一狭缝与第二狭缝在拐角 处通过内角凹状圓弧和外角凹状圓弧连接。 进一步地， 所述内角 状圓弧将距离内角最近的位于内角两侧的 状圓 弧的两个端点彼此连接。
进一步地， 所述外角凹状圓弧将距离外角最近的、 位于外角两侧的凹状 圓弧的两个端点彼此连接。
在一个实施例中， 当拐角角度为 180度时， 第一和第二狭缝的中心轴为 同一中心轴。
进一步地， 连接第一狭缝和第二狭缝的连接圓弧为以第一狭缝和第二狭 缝内径差的一半为半径的 1/4圓弧。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1是现有技术中掩模板的狭缝的结构示意图；
图 2是现有技术中直线形狭缝与锯齿形狭缝连接结构示意图；
图 3是本发明实施例的掩模板的结构示意图；
图 4是本发明实施例的掩模板狭缝拐角处的结构示意图；
图 5是本发明实施例的掩模板拐角为 180度的结构示意图；
图 6是本发明实施例的掩模板拐角过小时凹状圓弧相互重叠的结构示意 图；
图 7是本发明实施例的掩模板拐角过小时的结构示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。 。
除非另作定义， 此处使用的技术术语或者科学术语应当为本发明所属领 域内具有一般技能的人士所理解的通常意义。 本发明专利申请说明书以及权 利要求书中使用的 "第一" 、 "第二" 以及类似的词语并不表示任何顺序、 数量或者重要性，而只是用来区分不同的组成部分。同样， "一个 "或者 "一" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "包括" 或者 "包 含" 等类似的词语意指出现在 "包括" 或者 "包含" 前面的元件或者物件涵 盖出现在 "包括" 或者 "包含" 后面列举的元件或者物件及其等同， 并不排 除其他元件或者物件。 "连接" 或者 "相连" 等类似的词语并非限定于物理 的或者机械的连接， 而是可以包括电性的连接， 不管是直接的还是间接的。 "上" 、 "下" 、 "左" 、 "右" 等仅用于表示相对位置关系， 当被描述对 象的绝对位置改变后， 则该相对位置关系也可能相应地改变。
实施例 1
本发明实施例的掩模板如图 3所示， 所述掩模板包括不透光区 B和狭缝 状透光区 T, 掩模板上设置有狭缝， 狭缝具有两个相对的边缘， 即图 3中的 上、 下边缘 eupper、 elower, 每个边缘由多个连续的凹状圓弧构成（即多个凹状 圓弧彼此连接） ， 这两个边缘 eupper、 ei。wer的凹凸位置相互对应， 且上下边缘 的凹状圓弧沿狭缝方向的中心轴对称。
优选的， 凹状圓弧为半圓弧， 半圓弧的半径为 R, 所述凹状圓弧的半径 R例如小于 0.5 μ ιη,优选为 0.3 μ m,经过各半圓弧末端形成的两条直线为内 径切线， 两内径切线之间的距离为狭缝的内径（例如， 图 4 中的内径 Al、 A2 ) 。
优选的， 所述狭缝包括第一狭缝和第二狭缝， 所述第一狭缝与第二狭缝 之间形成一拐角， 二者通过拐角凹状圓弧连接。 如图 4所示， 所述拐角的角 度为第一狭缝中心线与第二狭缝中心线之间所形成的夹角， 例如为 β。 所述 拐角分为内角和外角。第一和第二狭缝在拐角处通过内角 状圓弧 CmnCT和外 角凹状圓弧 C。uto连接，第一狭缝和第二狭缝的内径切线相交于内角顶点和外 角顶点， 第一狭缝和第二狭缝的内径分别表示为 Al、 A2, 第一狭缝和第二 狭缝的凹状圓弧的半径分别表示为 Rl、 R2, 其中内径 Al、 A2可以相同也 可以不同， 凹状圓弧半径 Rl、 R2可以相同也可以不同。
具体的， 例如， 所述内角 状圓弧 Cinner为以内角顶点为圓心、 状圓弧 半径 R1和 R2的平均值为半径（即以第一狭缝的凹状圓弧的半径 R1和第二 狭缝凹状圓弧的半径 R2的平均值为半径 ) 的弧度为 β的凹状圓弧。 内角两 侧的连续 EJ状圓弧曲线分别以内角 状圓弧 Cmner两端点为起点，沿内角两侧 的内径切线向两侧延伸。 内角凹状圓弧 Cmner的圓心、半径和弧度不局限于本 实施例所述， 本领域技术人员可根据需要在狭缝拐角连接圓滑的情况下可进 行各种变换，只要所述内角凹状圓弧 Cmner将距离内角最近的位于内角两侧的 凹状圓弧的两个端点彼此连接即可。
所述外角两侧的 W状圓弧曲线分别沿外角两侧的内径切线向外角顶点延 伸， 所述外角两侧凹状圓弧曲线在延伸到距离外角顶点距离小于各自凹状圓 弧直径处停止，外角凹状圓弧 C。uter为以所述凹状圓弧曲线停止处的两端点之 间的距离为直径的凹状半圓弧。外角凹状圓弧 C。uter的半径和弧度不局限于本 实施例所述， 本领域技术人员可根据需要在狭缝拐角连接圓滑的情况下可进 行各种变换， 只要所述外角凹状圓弧 c。uter将距离外角最近的、位于外角两侧 的凹状圓弧的两个端点彼此连接即可。 实施例 2
本发明实施例提供一种掩模板， 其结构与实施例 1基本相同， 不同之处 在于：所述外角凹状圓弧 c。uter为以外角两侧的凹状圓弧曲线停止处的两端点 及外角顶点为顶点的外接圓弧。 实施例 3
本发明实施例提供一种掩模板，其结构与实施例 1和实施例 2基本相同， 不同之处在于： 所述拐角角度 β =180度， 第一和第二狭缝的中心轴为同一中 心轴， 如图 5所示。
当第一和第二狭缝的内径 A1和 Α2相等时，第一和第二狭缝的凹状圓弧 曲线直接连接无需连接圓弧。
当第一和第二狭缝的内径 A1和 Α2不相等时，例如图 5所示的情况， 内 径较小的狭缝的内径切线与分界线交于 D、 E两点， 所述连接圓弧为分别以 D、 E为圓心， 以两狭缝内径 A1和 A2差的一半为半径的 1/4圓弧。 连接圓 弧不局限于本实施例所述， 本领域技术人员可根据需要在狭缝拐角连接圓滑 的情况下可进行各种变换。 实施例 4
本发明实施例提供一种掩模板， 其结构与实施例 1基本相同， 不同之处 在于： 当拐角角度较小， 内角两侧凹状圓弧相互重叠时， 例如如图 6, 先去 掉相互重叠部分的凹状圓弧， 然后将第一狭缝和第二狭缝的距离内角最近的 两个端点用图 7所示的内角凹状圓弧彼此连接， 从而实现第一和第二狭缝之 间的平滑连接。
优选的， 所述内角凹状圓弧为以内角顶点到距内角距离最近的凹状圓弧 端点之间的距离为半径， 弧度为 β的凹状圓弧。
通过上述本发明实施例的掩模板， 采用连续的凹状圓弧构成狭缝， 并对 狭缝拐角处进行平滑连接， 不仅实现了窄线宽， 而且线宽平滑无毛刺， 保证 了线宽的均一度， 能够有效的避免拐角处线宽细线和过刻等问题， 满足了两 个方向窄线宽的需求， 提高了产品生产制造的成品率和品质。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
I、一种掩模板， 所述掩模板包括不透光区和狭缝状透光区， 所述狭缝具 有两个相对的边缘， 其中， 每个边缘由多个连续的凹状圓弧构成。
2、权利要求 1所述的掩模板， 其中， 所述狭缝两个边缘的多个凹状圓弧 的沿中心轴对称。
3、 权利要求 1或 2所述的掩模板， 其中， 所述凹状圓弧为半圓弧。
4、 权利要求 1-3任一项所述的掩模板， 其中， 所述狭缝包括第一狭缝和 第二狭缝， 所述第一狭缝与第二狭缝形成一拐角， 所述第一狭缝与第二狭缝 通过拐角凹状圓弧连接。
5、 权利要求 4所述的掩模板， 其中， 所述拐角包括内角和外角， 所述第 一狭缝与第二狭缝在拐角处通过内角凹状圓弧和外角凹状圓弧连接。
6、权利要求 5所述的掩模板， 其中， 所述内角凹状圓弧以第一狭缝的凹 状圓弧半径与第二狭缝的凹状圓弧半径的平均值为半径， 且内角凹状圓弧的 弧度等于拐角的角度。
7、权利要求 5所述的掩模板， 其中， 所述内角凹状圓弧将距离内角最近 的位于内角两侧的 状圓弧的两个端点彼此连接。
8、权利要求 5所述的掩模板， 其中， 所述外角两侧的凹状圓弧曲线分别 向外角顶点延伸， 所述凹状圓弧曲线在延伸到距离外角顶点小于各自凹状圓 弧直径处停止， 所述外角凹状圓弧为以所述凹状圓弧曲线停止处的两端点之 间的距离为直径的半圓弧。
9、权利要求 5所述的掩模板， 其中， 所述外角两侧的凹状圓弧曲线分别 向外角顶点延伸， 所述凹状圓弧曲线在延伸到距离外角顶点小于各自直径处 停止， 所述外角凹状圓弧为以所述凹状圓弧曲线停止处的两端点及外角顶点 为顶点的外接圓弧。
10、 权利要求 5所述的掩模板， 其中， 所述外角凹状圓弧将距离外角最 近的、 位于外角两侧的凹状圓弧的两个端点彼此连接。
II、 权利要求 4至 10任一项所述的掩模板， 其中， 当拐角角度为 180 度时， 第一和第二狭缝的中心轴为同一中心轴。
12、 权利要求 5所述的掩模板， 其中， 连接第一狭缝和第二狭缝的连接 圓弧为以第一狭缝和第二狭缝内径差的一半为半径的 ι/4圓弧。
PCT/CN2013/074138 2013-02-22 2013-04-12 掩模板 WO2014127569A1 (zh)

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