WO2014125877A1 - Film barrière aux gaz - Google Patents

Film barrière aux gaz Download PDF

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Publication number
WO2014125877A1
WO2014125877A1 PCT/JP2014/050993 JP2014050993W WO2014125877A1 WO 2014125877 A1 WO2014125877 A1 WO 2014125877A1 JP 2014050993 W JP2014050993 W JP 2014050993W WO 2014125877 A1 WO2014125877 A1 WO 2014125877A1
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Prior art keywords
film
layer
gas
gas barrier
barrier layer
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PCT/JP2014/050993
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English (en)
Japanese (ja)
Inventor
晃矢子 和地
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コニカミノルタ株式会社
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Priority to JP2015500166A priority Critical patent/JPWO2014125877A1/ja
Publication of WO2014125877A1 publication Critical patent/WO2014125877A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin

Definitions

  • the present invention relates to a gas barrier film. More specifically, the present invention relates to a gas barrier film excellent in storage stability, particularly storage stability under severe conditions (high temperature and high humidity conditions).
  • a gas barrier film formed by laminating a plurality of layers including thin films of metal oxides such as aluminum oxide, magnesium oxide, and silicon oxide on the surface of a plastic substrate or film is used to block various gases such as water vapor and oxygen.
  • metal oxides such as aluminum oxide, magnesium oxide, and silicon oxide
  • it is widely used for packaging of articles that require the use of, for example, packaging for preventing deterioration of foods, industrial products, pharmaceuticals, and the like.
  • Patent Document 1 a technology that does not deteriorate performance even if the base material expands or contracts due to environmental changes by providing a stress relaxation layer above the barrier layer (see Patent Document 1), and hardness between the base material and the inorganic layer.
  • Patent Document 2 a technique for improving the flexibility of a film by providing a soft organic layer of 2B or less (see Patent Document 2).
  • these methods improve the gas barrier property and bending resistance, the adhesion between the barrier layer and the substrate during long-term storage is not sufficient.
  • two primer layers made of a thermosetting resin are laminated between the barrier layer and the base material, and the thermosetting contained in the two layers.
  • a gas barrier film in which resins have different compositions has been disclosed (see Patent Document 3).
  • Patent Document 3 can withstand long-term storage under high humidity under conditions where the temperature is not so high, but under high temperature and high humidity, the adhesiveness with the barrier layer may decrease due to hydrolysis or the like. There was a problem of deterioration.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a gas barrier film having excellent storage stability, particularly storage stability under severe conditions (high temperature and high humidity conditions).
  • the present inventor conducted intensive research to solve the above problems.
  • the first anchor layer containing the curable resin and the active energy ray-curable resin between the resin base material and the barrier layer and the surface hardness measured by the nanoindentation method are the first
  • the present inventors have found that the above problem can be solved by a gas barrier film containing a second anchor layer different from the anchor layer of the present invention, and have completed the present invention.
  • the present invention includes a resin base material, a first anchor layer containing a curable resin, an active energy ray-curable resin, and a surface hardness measured by a nanoindentation method is the first anchor layer.
  • a gas barrier film comprising a different second anchor layer and a barrier layer containing an inorganic compound in this order.
  • a gas barrier film excellent in storage stability, particularly storage stability under severe conditions (high temperature and high humidity conditions) is provided.
  • FIG. 1 is a gas barrier film
  • 2 is an anchor layer-formed substrate
  • 3 is a barrier layer
  • 31 is a manufacturing apparatus
  • 32 is a delivery roller
  • 33, 34, 35 and 36 are transport rollers
  • 39 and 40 are film forming rollers
  • 42 is a plasma generating power source
  • 43 and 44 are magnetic field generators
  • 45 is a winding roller.
  • the present invention includes a resin substrate, a first anchor layer containing a curable resin, an ultraviolet curable resin, and a second hardness different from that of the first anchor layer as measured by a nanoindentation method.
  • a gas barrier film comprising an anchor layer and a barrier layer containing an inorganic compound in this order.
  • Patent Document 1 a technology that does not deteriorate the performance even when the base material expands / shrinks due to environmental changes by providing a stress relaxation layer above the barrier layer (the above-mentioned Patent Document 1), and the hardness between the base material and the inorganic layer.
  • Patent Document 2 a technique for improving the flexibility of the film by providing a soft organic layer of 2B or less (Patent Document 2).
  • Patent Document 3 a technique of laminating two layers of primers having different compositions between the barrier layer and the base material is disclosed (Patent Document 3).
  • Patent Document 3 can withstand long-term storage under high humidity under conditions where the temperature is not so high, but under high temperature and high humidity, the adhesiveness with the barrier layer is reduced due to hydrolysis or the like. There was a problem of deterioration.
  • the inventor of the present invention has a first anchor layer and a second anchor layer having different surface hardness laminated between a resin base material and a barrier layer. It was found that this gas barrier film exhibited high barrier properties with almost no cracking or peeling of the barrier layer. Further, in the conventional gas barrier film, as a result of hygroscopic expansion and thermal expansion, phenomena such as a decrease in transmittance and an increase in HAZE due to the deformation of the substrate were observed. It was found that the characteristics were hardly impaired and high transmittance and HAZE could be maintained.
  • gas barrier film of the present invention is excellent in storage stability, particularly storage stability under high temperature and high humidity is unknown, but is considered to be as follows.
  • a chemical deposition method (plasma CVD) is used in which an organic silicon compound such as tetraethoxysilane (TEOS) is used and a film is formed on a substrate while being oxidized with oxygen plasma under reduced pressure.
  • vapor phase methods such as chemical vapor deposition (chemical vapor deposition) and physical deposition methods (vacuum evaporation method and sputtering method) that vaporize metal Si using a semiconductor laser and deposit it on the substrate in the presence of oxygen.
  • chemical vapor deposition chemical vapor deposition
  • physical deposition methods vacuum evaporation method and sputtering method
  • the configuration of the present invention it is also effective for the deformation of the resin base material generated by the gas phase method as described above.
  • This effect is more remarkable in a resin base material having a large expansion and contraction due to heat, such as a triacetyl cellulose (TAC) film or a polycarbonate (PC) film. Therefore, it is possible to provide a gas barrier film that is suitable for optical applications such as OLED and has low retardation and excellent long-term storage stability.
  • TAC triacetyl cellulose
  • PC polycarbonate
  • X to Y indicating a range means “X or more and Y or less”, “weight” and “mass”, “weight%” and “mass%”, “part by weight” and “weight part”. “Part by mass” is treated as a synonym. Unless otherwise specified, measurement of operation and physical properties is performed under conditions of room temperature (20 to 25 ° C.) / Relative humidity 40 to 50%.
  • the gas barrier film of the present invention has a resin base material, a first anchor layer, a second anchor layer, and a barrier layer in this order.
  • the gas barrier film of the present invention may further contain other members.
  • the gas barrier film of the present invention is, for example, between the resin base material and the first anchor layer, between the first anchor layer and the second anchor layer, between the second anchor layer and the barrier layer, Another member may be provided on the barrier layer or on the other surface of the base material on which the barrier layer is not formed.
  • the other members are not particularly limited, and members used for conventional gas barrier films can be used similarly or appropriately modified. Specific examples include a smooth layer, an anchor coat layer, an overcoat layer, a bleed-out prevention layer, a protective layer, a functional layer of a moisture absorption layer and an antistatic layer, and the like.
  • the gas barrier unit having the first anchor layer, the second anchor layer, and the barrier layer may be formed on one surface of the resin base material, or formed on both surfaces of the resin base material. May be.
  • the gas barrier unit may include a layer that does not necessarily have a gas barrier property.
  • a plastic film or a plastic sheet is used as a resin substrate, and a film or sheet made of a colorless and transparent resin is preferably used.
  • the plastic film to be used is not particularly limited in material, thickness and the like as long as it can hold the first anchor layer, the second anchor layer, the barrier layer, and the like, and can be appropriately selected according to the purpose of use.
  • Specific examples of the plastic film include polyester resin, methacrylic resin, methacrylic acid-maleic acid copolymer, polystyrene resin, transparent fluororesin, polyimide, fluorinated polyimide resin, polyamide resin, polyamideimide resin, and polyetherimide.
  • Resin cellulose acylate resin, polyurethane resin, polyether ether ketone resin, polycarbonate resin, alicyclic polyolefin resin, polyarylate resin, polyether sulfone resin, polysulfone resin, cycloolefin copolymer, fluorene ring modified polycarbonate resin, alicyclic modification
  • thermoplastic resins such as polycarbonate resin, fluorene ring-modified polyester resin, and acryloyl compound.
  • the resin base material is preferably made of a heat resistant material. Specifically, a resin base material having a linear expansion coefficient of 15 ppm / K or more and 100 ppm / K or less and a glass transition temperature (Tg) of 100 ° C. or more and 300 ° C. or less is used.
  • Tg glass transition temperature
  • the base material satisfies the requirements for use as a laminated film for electronic parts and displays. That is, when the gas barrier film of the present invention is used for these applications, the gas barrier film may be exposed to a process at 150 ° C. or higher.
  • the substrate dimensions are not stable when the gas barrier film is passed through the temperature process as described above, and thermal expansion and contraction occur. Inconvenience that the shut-off performance is deteriorated or a problem that the thermal process cannot withstand is likely to occur. If it is less than 15 ppm / K, the film may break like glass and the flexibility may deteriorate.
  • Polyolefin for example, ZEONOR (registered trademark) 1600: 160 ° C) manufactured by Nippon Zeon Co., Ltd., polyarylate (PAr: 210 ° C), polyethersulfone (PES: 220 ° C), polysulfone (PSF: 190 ° C), cycloolefin Copolymer (COC: Compound described in JP-A No. 2001-150584: 162 ° C.), polyimide (for example, Neoprim (registered trademark): 260 ° C. manufactured by Mitsubishi Gas Chemical Co., Ltd.), fluorene ring-modified polycarbonate (BCF-PC: special Kai 2000-227603 Compound described in JP-A No.
  • the gas barrier film according to the present invention is used in combination with, for example, a polarizing plate, it is preferable to arrange the gas barrier film so that the barrier layer of the gas barrier film faces the inside of the cell. More preferably, the barrier layer of the gas barrier film is disposed on the innermost side of the cell (adjacent to the element). At this time, since the gas barrier film is disposed inside the cell from the polarizing plate, the retardation value of the gas barrier film is important.
  • the usage form of the gas barrier film in such an embodiment includes a gas barrier film using a resin base film having a retardation value of 10 nm or less and a circularly polarizing plate (1 ⁇ 4 wavelength plate + (1 ⁇ 2 wavelength plate) + A linear polarizing plate in combination with a gas barrier film using a resin base film having a retardation value of 100 nm to 180 nm, which can be used as a quarter wavelength plate. Is preferred.
  • Examples of the resin base film having a retardation value of 10 nm or less include a triacetyl cellulose film (manufactured by Konica Minolta Advanced Layer Co., Ltd .: Konica Minolta Tack KC6UY, Fuji Film Co., Ltd .: Fujitac (registered trademark)), polycarbonate film, and the like.
  • the quarter wavelength plate a film adjusted to a desired retardation value by appropriately stretching the above film can be used.
  • a triacetyl cellulose film and a polycarbonate film are preferable, and a triacetyl cellulose film is more preferable.
  • the substrate is preferably transparent. That is, the light transmittance is usually 80% or more, preferably 85% or more, and more preferably 90% or more.
  • the light transmittance is calculated by measuring the total light transmittance and the amount of scattered light using the method described in JIS K7105: 1981, that is, using an integrating sphere light transmittance measuring device, and subtracting the diffuse transmittance from the total light transmittance. can do.
  • an opaque material can be used as the base material.
  • the opaque material include polyimide, polyacrylonitrile, and known liquid crystal polymers.
  • the thickness of the base material used for the gas barrier film according to the present invention is not particularly limited because it is appropriately selected depending on the application, but is typically 1 to 800 ⁇ m, preferably 10 to 200 ⁇ m.
  • These plastic films may have functional layers such as a transparent conductive layer and a primer layer.
  • As the functional layer in addition to those described above, those described in paragraph numbers “0036” to “0038” of JP-A-2006-289627 (corresponding to US Patent Application Publication No. 2006/251905) are preferably used. Can be adopted.
  • the substrate preferably has a high surface smoothness.
  • the surface smoothness those having an average surface roughness (Ra) of 2 nm or less are preferable. Although there is no particular lower limit, it is practically 0.01 nm or more. If necessary, both surfaces of the substrate, at least the side on which the barrier layer is provided, may be polished to improve smoothness.
  • the resin base material listed above may be an unstretched film or a stretched film.
  • a stretched film is preferable, a stretched triacetyl cellulose film, and a stretched polycarbonate film are more preferable, and stretched.
  • a triacetyl cellulose film is more preferable.
  • the barrier layer is formed by a vacuum film formation method such as a chemical vapor deposition method, it is preferable to use a stretched film.
  • the resin substrate used in the present invention can be produced by a conventionally known general method.
  • an unstretched substrate that is substantially amorphous and not oriented can be produced by melting a resin as a material with an extruder, extruding it with an annular die or a T-die, and quenching.
  • the unstretched resin base material is uniaxially stretched, tenter-type sequential biaxial stretching, tenter-type simultaneous biaxial stretching, tubular simultaneous biaxial stretching, and other known methods, such as the base material flow (vertical axis) direction
  • a stretched resin substrate can be produced by stretching in a direction perpendicular to the flow direction of the substrate (horizontal axis).
  • the draw ratio in this case can be appropriately selected according to the resin used as the raw material of the resin base material, but is preferably 2 to 10 times in the vertical axis direction and the horizontal axis direction.
  • At least the first anchor layer according to the present invention on the side where the first anchor layer is provided is known various treatments for improving adhesion, such as corona discharge treatment, flame treatment, oxidation treatment, or plasma treatment, and smoothing described later. Layer stacking or the like may be performed, and it is preferable to combine the above treatments as necessary.
  • the gas barrier film of the present invention includes a first anchor layer containing a curable resin and an active energy ray curable resin on the top of a resin substrate (between the resin substrate and the barrier layer), and a nanoindene. It has the 2nd anchor layer in which the surface hardness measured by a tentation method differs from the said 1st anchor layer in this order. By setting it as such a structure, even if it preserve
  • the first anchor layer includes a curable resin.
  • the curable resin is not particularly limited, and the active energy ray curable material is irradiated with an active energy ray such as an ultraviolet ray, an electron beam, an X ray, an ⁇ ray, a ⁇ ray, a ⁇ ray, and a neutron ray to be cured. Examples thereof include an active energy ray curable resin obtained and a thermosetting resin obtained by curing by heating a thermosetting material. These curable resins may be used alone or in combination of two or more.
  • the active energy ray-curable material examples include a composition containing an acrylate compound, a composition containing an acrylate compound and a mercapto compound containing a thiol group, epoxy acrylate, urethane acrylate, polyester acrylate, polyether acrylate, polyethylene
  • examples thereof include compositions containing polyfunctional acrylate monomers such as glycol acrylate and glycerol methacrylate.
  • OPSTAR registered trademark
  • JSR Corporation JSR Corporation. It is also possible to use any mixture of the above-mentioned compositions, and an active energy ray-curable material containing a reactive monomer having at least one photopolymerizable unsaturated bond in the molecule. If there is no particular limitation.
  • Examples of reactive monomers having at least one photopolymerizable unsaturated bond in the molecule include methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, tert-butyl acrylate, and n-pentyl.
  • active energy ray curing also includes polyester resins, silicone resins, and the like having an active energy ray-curable functional group that causes a curing reaction when irradiated with active energy rays such as ethylenically unsaturated double bonds. It can be used as a property material.
  • composition containing the active energy ray-curable material contains a photopolymerization initiator.
  • photopolymerization initiator examples include benzophenone, methyl o-benzoylbenzoate, 4,4-bis (dimethylamine) benzophenone, 4,4-bis (diethylamine) benzophenone, ⁇ -amino acetophenone, 4,4-dichloro Benzophenone, 4-benzoyl-4-methyldiphenyl ketone, dibenzyl ketone, fluorenone, 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methylpropiophenone, p- tert-Butyldichloroacetophenone, thioxanthone, 2-methylthioxanthone, 2-chlorothioxanthone, 2-isopropylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, benzylmethoxyethyl acetal, benzo Methyl ether
  • the active energy ray-curable material may be a commercially available product or a synthetic product.
  • commercially available products include, for example, OPSTAR (registered trademark) Z7527 (manufactured by JSR Corporation), MP-6103 (manufactured by Washin Chemical Industry Co., Ltd.), Unidic (registered trademark) V-4025 (urethane acrylate, DIC Corporation) And Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.).
  • thermosetting materials include thermosetting urethane resins composed of acrylic polyols and isocyanate prepolymers, phenol resins, melamine resins, urea melamine resins, epoxy resins, unsaturated polyester resins, silicon resins, and polyamidoamines. -Epichlorohydrin resins, mixtures of polyester resins and isocyanate resins, and the like.
  • the thermosetting material may be a commercially available product or a synthetic product.
  • commercially available products include, for example, TutProm Series (Organic Polysilazane) manufactured by Clariant, SP COAT heat-resistant clear paint manufactured by Ceramic Co., Ltd., Nanohybrid Silicone manufactured by Adeka, Unidick manufactured by DIC Corporation ( (Registered trademark) V-8000 series, EPICLON (registered trademark) EXA-4710 (super high heat resistance epoxy resin), silicon resin X-12-2400 (trade name) manufactured by Shin-Etsu Chemical Co., Ltd., manufactured by Nitto Boseki Co., Ltd.
  • examples include inorganic / organic nanocomposite material SSG coat.
  • the first anchor layer preferably contains an active energy ray curable resin.
  • the method for forming the first anchor layer is not particularly limited, but a bar coating method using a wire bar or the like, a spin coating method, a spray method, a blade coating method, a dip method, or a gravure printing method.
  • a wet coating method such as vapor deposition or a dry coating method such as vapor deposition to form a coating film
  • active energy such as visible light, infrared light, ultraviolet light, X-rays, ⁇ -rays, ⁇ -rays, ⁇ -rays, and electron beams
  • a method in which the coating film is cured and formed by irradiation with rays and / or heating is preferred.
  • an ultra-high pressure mercury lamp, a high-pressure mercury lamp, a low-pressure mercury lamp, a carbon arc, a metal halide lamp or the like is used, and ultraviolet rays in a wavelength region of preferably 100 to 400 nm, more preferably 200 to 400 nm are irradiated.
  • a method of irradiating an electron beam having a wavelength region of 100 nm or less emitted from a scanning or curtain type electron beam accelerator is preferably 0.1 to 1 J / cm 2 .
  • examples of the heat curing method include a method of heating using an oven, a hot air oven, a hot air dryer, a hot plate, or the like.
  • the heating temperature for heating is preferably 50 to 150 ° C.
  • the heating time is preferably 30 seconds to 5 minutes.
  • Solvents used when forming the first anchor layer using a coating solution in which a curable material is dissolved or dispersed in a solvent include methanol, ethanol, n-propyl alcohol, isopropyl alcohol, ethylene glycol, propylene glycol, etc.
  • the first anchor layer can contain additives such as a thermoplastic resin, an antioxidant, an ultraviolet absorber, and a plasticizer, if necessary, in addition to the curable material described above. Further, it may contain an appropriate resin, additives such as a silane coupling agent and metal oxide particles for improving the film formability, preventing the occurrence of pinholes in the film, and adjusting the surface hardness of the film.
  • the thermoplastic resin include cellulose derivatives such as acetylcellulose, nitrocellulose, acetylbutylcellulose, ethylcellulose and methylcellulose, vinyl acetate and copolymers thereof, vinyl chloride and copolymers thereof, vinylidene chloride and copolymers thereof and the like.
  • Examples include resins, acetal resins such as polyvinyl formal and polyvinyl butyral, acrylic resins and copolymers thereof, acrylic resins such as methacrylic resins and copolymers thereof, polystyrene resins, polyamide resins, linear polyester resins, and polycarbonate resins.
  • the thickness of the first anchor layer is not particularly limited, but is preferably 0.025 to 10 ⁇ m, more preferably 0.5 to 4 ⁇ m from the viewpoint of suppressing curling of the gas barrier film.
  • the surface hardness (hereinafter also simply referred to as “SHA”) of the first anchor layer measured by the nanoindentation method is 0.15 to 0.00 from the viewpoint of obtaining the above-described effect of the present invention more efficiently. It is preferably 4 GPa, more preferably 0.25 to 0.4 GPa.
  • the nanoindentation method is a method in which the indenter is continuously loaded and unloaded with a very small load, and the hardness and elastic modulus are measured from the obtained load-displacement curve.
  • the nanoindentation method is a measurement of indentation hardness at the nano level by adding an indentation hardness measurement module (configured with a transducer and an indentation tip) to an atomic force microscope (AFM). It is a measuring method that can be performed. While applying a load of ⁇ N or less, a diamond indenter is pushed into the sample, and the indentation depth is measured with nanometer accuracy. A load-displacement curve diagram can be obtained from this measurement, and the properties of the material relating to elasto-plastic deformation can be quantitatively evaluated. In the case of a thin film, in order to perform measurement without being affected by the base material, it is necessary to push in to a depth of 1/10 to 1/3 of the film thickness.
  • AFM atomic force microscope
  • the surface hardness of the first anchor layer, the second anchor layer, and the barrier layer is measured using a Triscope from Hysitoron attached to a scanning probe microscope (SPI3800N from Seiko Instruments Inc.). .
  • the working indenter is a cube corner tip (90 °).
  • the SHa can be controlled by the type of curable resin, conditions for curing, and the like.
  • the second anchor layer contains an active energy ray-curable resin, and the surface hardness measured by the nanoindentation method is different from that of the first anchor layer.
  • active energy ray-curable resin contained in the second anchor layer are the same as those described in the section of the first anchor layer, and the description thereof is omitted here.
  • the active energy ray-curable resin used for the second anchor layer may be a commercially available product or a synthetic product.
  • Examples of commercially available active energy ray-curable resins used for the second anchor layer include, for example, OPSTAR (registered trademark) Z7527 (manufactured by JSR Corporation), Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.) Etc.
  • UV curable resins ultraviolet curable resins
  • the active energy ray-curable resin in addition to the active energy ray-curable resin, it contains additives such as a thermoplastic resin, an antioxidant, an ultraviolet absorber, and a plasticizer as necessary. Can do. Further, it may contain an appropriate resin, additives such as a silane coupling agent and metal oxide particles for improving the film formability, preventing the occurrence of pinholes in the film, and adjusting the surface hardness of the film.
  • the method for forming the second anchor layer is also the same as the method described in the section of the first anchor layer, and the description is omitted here.
  • the film thickness of the second anchor layer is not particularly limited, but is preferably 0.025 to 10 ⁇ m, more preferably 0.5 to 4 ⁇ m.
  • the film thickness of the second anchor layer is more preferably smaller than the film thickness of the first anchor layer. With such a film thickness relationship, the effects of the present invention can be obtained more efficiently.
  • the surface hardness (hereinafter also simply referred to as SHb) of the second anchor layer measured by the nanoindentation method is different from the surface hardness (SHA) of the first anchor layer (SHa ⁇ SHb). Specifically, it is preferably 0.15 to 0.4 GPa, more preferably 0.25 to 0.4 GPa.
  • the SHb can be controlled by the type of active energy ray-curable resin, the conditions for curing, and the like.
  • the first anchor layer and the second anchor layer are preferably smooth because a barrier layer is provided on the top.
  • the surface roughness (Ra value) is preferably 0.3 to 3 nm, and more preferably 0.5 to 1.5 nm. If the thickness is smaller than 0.3 nm, the surface is too smooth, roll conveyance is deteriorated, and there is a possibility that the barrier layer formation by the CVD method may be hindered. On the other hand, if the thickness is larger than 3 nm, minute defects are likely to be formed in the barrier layer, and the gas barrier property and adhesion may be lowered.
  • the surface roughness is calculated from an uneven cross-sectional curve continuously measured with an AFM (Atomic Force Microscope), for example, DI3100 manufactured by Digital Instruments, with a detector having a stylus with a minimum tip radius, and the minimum tip This is the roughness related to the amplitude of fine irregularities, measured many times in a section whose measurement direction is several tens of ⁇ m with a radius stylus.
  • AFM Acoustic Force Microscope
  • an intermediate layer such as an adhesive layer may be further provided between the first anchor layer and the second anchor layer.
  • an intermediate layer such as an adhesive layer
  • a form in which the first anchor layer and the second anchor layer are in contact with each other without an intermediate layer is preferable.
  • the total film thickness of the first anchor layer and the second anchor layer is preferably in the range of 0.3 to 20 ⁇ m, and more preferably in the range of 0.5 to 10 ⁇ m. Within such a range, curling of the gas barrier film can be suppressed.
  • said 1st anchor layer and 2nd anchor layer can also suppress the phenomenon (bleed out) which an unreacted oligomer etc. transfer from a resin base material to a barrier layer, and is contaminated.
  • the barrier layer according to the present invention formed on the second anchor layer includes an inorganic compound. Although it does not specifically limit as an inorganic compound contained in a barrier layer, For example, a metal oxide, a metal nitride, a metal carbide, a metal oxynitride, or a metal oxycarbide is mentioned.
  • oxides, nitrides, carbides, oxynitrides or oxycarbides containing one or more metals selected from Si, Al, In, Sn, Zn, Ti, Cu, Ce and Ta in terms of gas barrier performance are preferably used, and an oxide, nitride or oxynitride of a metal selected from Si, Al, In, Sn, Zn and Ti is more preferable, and in particular, an oxide of at least one of Si and Al, Nitride or oxynitride is preferred.
  • suitable inorganic compounds include composites such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, aluminum oxide, titanium oxide, and aluminum silicate. You may contain another element as a secondary component.
  • the content of the inorganic compound contained in the barrier layer is not particularly limited, but is preferably 50% by weight or more, more preferably 80% by weight or more, and more preferably 95% by weight or more in the barrier layer. It is preferably 98% by weight or more, and most preferably 100% by weight (that is, the barrier layer is made of an inorganic compound).
  • the barrier layer contains an inorganic compound and thus has a gas barrier property.
  • the gas barrier property of the barrier layer is calculated with a laminate in which the barrier layer is formed on the substrate, the water vapor transmission rate (WVTR) measured by the method described in Examples below is 0.1 g / preferably (m 2 ⁇ day) or less, more preferably 0.01g / (m 2 ⁇ day) or less.
  • the method for forming the barrier layer is not particularly limited, but includes a vacuum film-forming method such as physical vapor deposition (PVD method), chemical vapor deposition (chemical vapor deposition, hereinafter also simply referred to as CVD), or a silicon compound.
  • PVD method physical vapor deposition
  • CVD chemical vapor deposition
  • silicon compound a silicon compound.
  • a method in which a coating film formed by applying a liquid to be formed is subjected to a modification treatment (hereinafter also simply referred to as a coating method) is preferable.
  • the physical vapor deposition method is a method of depositing a target material, for example, a thin film such as a carbon film, on the surface of the material in a gas phase by a physical method.
  • a sputtering method DC sputtering, RF sputtering
  • Ion beam sputtering, magnetron sputtering, etc. vacuum deposition method, ion plating method and the like.
  • Sputtering is a method in which a target is placed in a vacuum chamber, a rare gas element (usually argon) ionized by applying a high voltage is collided with the target, and atoms on the target surface are ejected and adhered to the substrate.
  • a reactive sputtering method may be used in which an inorganic layer is formed by causing nitrogen and oxygen gas to flow into the chamber to react the element ejected from the target with argon gas with nitrogen and oxygen. .
  • Chemical vapor deposition (chemical vapor deposition, Chemical Vapor Deposition) supplies a raw material gas containing the desired thin film components onto a resin substrate, and the film is formed by a chemical reaction on the surface of the resin substrate or in the gas phase. It is a method of depositing. In addition, for the purpose of activating the chemical reaction, there is a method of generating plasma or the like.
  • Known CVD such as thermal CVD method, catalytic chemical vapor deposition method, photo CVD method, vacuum plasma CVD method, atmospheric pressure plasma CVD method, etc. The method etc. are mentioned. Although not particularly limited, it is preferable to apply the plasma CVD method from the viewpoint of the film formation speed and the processing area.
  • the conditions such as the raw material (also referred to as raw material) metal compound, decomposition gas, decomposition temperature, input power, etc. are selected. Therefore, the target compound can be produced, which is preferable.
  • silicon oxide is generated.
  • highly active charged particles and active radicals exist in the plasma space at a high density, so that multistage chemical reactions are accelerated at high speed in the plasma space, and the elements present in the plasma space are thermodynamic. This is because it is converted into an extremely stable compound in a very short time.
  • a raw material compound used in the vacuum film-forming method it is preferable to use a silicon compound, a titanium compound, and an aluminum compound.
  • a raw material compound it is preferable to use a silicon compound, a titanium compound, and an aluminum compound.
  • silicon compounds silane, tetramethoxysilane, tetraethoxysilane, tetra n-propoxysilane, tetraisopropoxysilane, tetra n-butoxysilane, tetra t-butoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, Examples include diethyldimethoxysilane and diphenyldimethoxysilane.
  • titanium compounds include titanium methoxide, titanium ethoxide, titanium isopropoxide, titanium tetraisoporopoxide, titanium n-butoxide, and the like.
  • a decomposition gas for decomposing a raw material gas containing these metals to obtain an inorganic compound hydrogen gas, methane gas, acetylene gas, carbon monoxide gas, carbon dioxide gas, nitrogen gas, ammonia gas, nitrous oxide
  • examples include gas, nitrogen oxide gas, nitrogen dioxide gas, oxygen gas, and water vapor.
  • the decomposition gas may be mixed with an inert gas such as argon gas or helium gas.
  • a decomposition gas for decomposing a raw material gas containing these metals to obtain an inorganic compound hydrogen gas, methane gas, acetylene gas, carbon monoxide gas, carbon dioxide gas, nitrogen gas, ammonia gas, nitrous oxide
  • examples include gas, nitrogen oxide gas, nitrogen dioxide gas, oxygen gas, and water vapor.
  • the decomposition gas may be mixed with an inert gas such as argon gas or helium gas.
  • the barrier layer according to the present invention may be formed by a method (coating method) in which a coating film formed by applying a liquid containing a silicon compound is reformed.
  • the silicon compound used in the coating method is not particularly limited as long as a coating solution containing a silicon compound can be prepared.
  • the silicon compound is not particularly limited as long as a coating liquid containing a silicon compound can be prepared.
  • perhydropolysilazane perhydropolysilazane, organopolysilazane, silsesquioxane, tetramethylsilane, trimethylmethoxysilane, dimethyldimethoxysilane, methyltrimethoxysilane, trimethylethoxysilane, dimethyldiethoxysilane, methyltriethoxysilane, Examples thereof include tetramethoxysilane.
  • polysilazane such as perhydropolysilazane and organopolysilazane; polysiloxane such as silsesquioxane, etc. are preferable in terms of film formation, fewer defects such as cracks, and less residual organic matter, and high gas barrier performance.
  • Polysilazane is more preferable, and perhydropolysilazane is particularly preferable because the barrier performance is maintained even when bent and under high temperature and high humidity conditions.
  • Polysilazane is a polymer having a silicon-nitrogen bond, such as SiO 2 , Si 3 N 4 having a bond such as Si—N, Si—H, or N—H, and ceramics such as both intermediate solid solutions SiO x N y. It is a precursor inorganic polymer.
  • the polysilazane preferably has the following structure.
  • R 1 , R 2 and R 3 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, aryl group, vinyl group or (trialkoxysilyl) alkyl group. .
  • R 1 , R 2 and R 3 may be the same or different.
  • examples of the alkyl group include linear, branched or cyclic alkyl groups having 1 to 8 carbon atoms.
  • n is an integer
  • the polysilazane having the structure represented by the general formula (I) is determined to have a number average molecular weight of 150 to 150,000 g / mol. preferable.
  • one of preferred embodiments is perhydropolysilazane in which all of R 1 , R 2 and R 3 are hydrogen atoms.
  • Perhydropolysilazane is presumed to have a linear structure and a ring structure centered on 6- and 8-membered rings.
  • the number average molecular weight (Mn) is about 600 to 2000 (polystyrene conversion), and there are liquid or solid substances, and the state varies depending on the molecular weight.
  • Polysilazane is commercially available in the form of a solution dissolved in an organic solvent, and the commercially available product can be used as it is as a coating solution for forming a polysilazane layer.
  • Examples of commercially available polysilazane solutions include AQUAMICA (registered trademark) NN120-10, NN120-20, NAX120-20, NN110, NN310, NN320, NL110A, NL120A, NL120-20, NL150A, and NP110 manufactured by AZ Electronic Materials Co., Ltd. NP140, SP140 and the like.
  • the film thickness (dry film thickness) of the barrier layer is not particularly limited, but the film thickness per layer of the barrier layer is preferably 20 to 3000 nm, more preferably 50 to 2500 nm, and more preferably 100 to Particularly preferred is 1000 nm. With such a film thickness, the gas barrier film can exhibit excellent gas barrier properties and the effect of suppressing / preventing cracking during bending. In addition, when the barrier layer formed by said plasma CVD method is comprised from 2 or more layers, it is preferable that each barrier layer has a film thickness as mentioned above.
  • the barrier layer can be formed, for example, by the method described in paragraphs “0035” to “0058” of JP2012-131194A.
  • the barrier layer preferably contains carbon, silicon, and oxygen as constituent elements.
  • a more preferable form is a layer that satisfies the following requirements (i) to (iii).
  • the barrier layer comprises (i) a distance (L) from the surface of the barrier layer in the film thickness direction of the barrier layer and a ratio of the amount of silicon atoms to the total amount of silicon atoms, oxygen atoms, and carbon atoms (silicon A silicon distribution curve showing a relationship with the atomic ratio), an oxygen distribution curve showing a relationship between the L and the ratio of the amount of oxygen atoms to the total amount of silicon atoms, oxygen atoms, and carbon atoms (atomic ratio of oxygen), and 90% or more of the thickness of the barrier layer (upper limit) in the carbon distribution curve showing the relationship between the L and the ratio of the amount of carbon atoms to the total amount of silicon atoms, oxygen atoms, and carbon atoms (the atomic ratio of carbon) : 100%) in the order of (atomic ratio of oxygen), (atomic ratio of silicon), and (atomic ratio of carbon) (atomic ratio is preferably O> Si> C).
  • the gas barrier property and flexibility of the resulting gas barrier film may be insufficient.
  • the relationship of the above (atomic ratio of oxygen), (atomic ratio of silicon) and (atomic ratio of carbon) is at least 90% or more (upper limit: 100%) of the thickness of the barrier layer. ) And more preferably at least 93% or more (upper limit: 100%).
  • “at least 90% or more of the thickness of the barrier layer” does not need to be continuous in the barrier layer, and only needs to satisfy the above-described relationship at a portion of 90% or more.
  • the barrier layer has (ii) the carbon distribution curve has at least two extreme values.
  • the barrier layer preferably has at least three extreme values in the carbon distribution curve, and more preferably has at least four extreme values, but may have five or more extreme values.
  • the extreme value of the carbon distribution curve is 1 or less, the gas barrier property may be insufficient when the obtained gas barrier film is bent.
  • the upper limit of the number of extreme values in the carbon distribution curve is not particularly limited, but is preferably 30 or less, more preferably 25 or less, for example. Since the number of extreme values is also caused by the film thickness of the barrier layer, it cannot be specified unconditionally.
  • the distance from the surface of the barrier layer in the film thickness direction of the barrier layer at one extreme value of the carbon distribution curve and the extreme value adjacent to the extreme value is preferably 200 nm or less, more preferably 100 nm or less, and particularly preferably 75 nm or less. preferable.
  • distance between extreme values there are portions having a large carbon atom ratio (maximum value) in the barrier layer at an appropriate period, so that appropriate flexibility is imparted to the barrier layer, and the gas barrier film Generation of cracks during bending can be more effectively suppressed / prevented.
  • the “extreme value” refers to the maximum value or the minimum value of the atomic ratio of the element to the distance (L) from the surface of the barrier layer in the film thickness direction of the barrier layer.
  • the “maximum value” is a point where the value of the atomic ratio of an element (oxygen, silicon, or carbon) changes from an increase to a decrease when the distance from the surface of the barrier layer is changed.
  • the “minimum value” in this specification is a point in which the value of the atomic ratio of an element (oxygen, silicon, or carbon) changes from decrease to increase when the distance from the surface of the barrier layer is changed.
  • the atomic ratio value of the element at a position where the distance from the point in the film thickness direction of the barrier layer from the point in the film thickness direction of the barrier layer to the surface of the barrier layer is further changed by 4 to 20 nm is 3 at%. This is the point that increases.
  • the atomic ratio value of the element when changing in the range of 4 to 20 nm, the atomic ratio value of the element only needs to increase by 3 at% or more in any range.
  • the lower limit of the distance between the extreme values in the case of having at least three extreme values is particularly high because the smaller the distance between the extreme values, the higher the effect of suppressing / preventing crack generation when the gas barrier film is bent.
  • the thickness is preferably 10 nm or more, and more preferably 30 nm or more.
  • the barrier layer has (iii) an absolute value of the difference between the maximum value and the minimum value of the atomic ratio of carbon in the carbon distribution curve (hereinafter, also simply referred to as “C max ⁇ C min difference”) of 3 at% or more. Preferably there is.
  • C max ⁇ C min difference is preferably 5 at% or more, more preferably 7 at% or more, and particularly preferably 10 at% or more.
  • the “maximum value” is the atomic ratio of each element that is maximum in the distribution curve of each element, and is the highest value among the maximum values.
  • the “minimum value” is the atomic ratio of each element that is the minimum in the distribution curve of each element, and is the lowest value among the minimum values.
  • the upper limit of the C max -C min difference is not particularly limited, but it is preferably 50 at% or less in consideration of the effect of suppressing / preventing crack generation during bending of the gas barrier film, and is preferably 40 at% or less. It is more preferable that
  • the oxygen distribution curve of the barrier layer preferably has at least one extreme value, more preferably has at least two extreme values, and more preferably has at least three extreme values.
  • the oxygen distribution curve has at least one extreme value, the gas barrier property when the obtained gas barrier film is bent is further improved.
  • the upper limit of the number of extreme values of the oxygen distribution curve is not particularly limited, but is preferably 20 or less, more preferably 10 or less, for example. Even in the number of extreme values of the oxygen distribution curve, there is a portion caused by the thickness of the barrier layer, and it cannot be defined unconditionally.
  • a difference in distance from the surface of the barrier layer in the film thickness direction of the barrier layer at one extreme value of the oxygen distribution curve and an extreme value adjacent to the extreme value are preferably 200 nm or less, more preferably 100 nm or less. With such a distance between extreme values, the occurrence of cracks during bending of the gas barrier film can be more effectively suppressed / prevented.
  • the lower limit of the distance between the extreme values in the case of having at least three extreme values is not particularly limited, but considering the improvement effect of crack generation suppression / prevention when the gas barrier film is bent, the thermal expansion property, etc.
  • the thickness is preferably 10 nm or more, and more preferably 30 nm or more.
  • the absolute value of the difference between the maximum value and the minimum value of the atomic ratio of oxygen in the oxygen distribution curve of the barrier layer (hereinafter also simply referred to as “O max -O min difference”) is 3 at% or more. Preferably, it is 6 at% or more, more preferably 7 at% or more. When the absolute value is 3 at% or more, the gas barrier property when the obtained gas barrier film is bent is further improved.
  • the upper limit of the O max -O min difference is not particularly limited, but is preferably 50 at% or less, and is preferably 40 at% or less in consideration of the effect of suppressing / preventing crack generation when the gas barrier film is bent. It is more preferable that
  • the absolute value of the difference between the maximum value and the minimum value of the atomic ratio of silicon in the silicon distribution curve of the barrier layer (hereinafter also simply referred to as “Si max ⁇ Si min difference”) is preferably 10 at% or less, and 7 at % Or less, more preferably 3 at% or less.
  • Si max ⁇ Si min difference is preferably 10 at% or less, and 7 at % Or less, more preferably 3 at% or less.
  • the lower limit of Si max -Si min difference because the effect of improving the crack generation suppression / prevention during bending of Si max -Si min as gas barrier property difference is small film is high, is not particularly limited, and gas barrier property In consideration, it is preferably 1 at% or more, and more preferably 2 at% or more.
  • the total amount of carbon and oxygen atoms with respect to the film thickness direction of the barrier layer is preferably substantially constant.
  • the ratio of the total amount of oxygen atoms and carbon atoms to the distance (L) from the surface of the barrier layer in the film thickness direction of the barrier layer and the total amount of silicon atoms, oxygen atoms, and carbon atoms (inafter simply referred to as “OC max ”).
  • -OC min difference ) is preferably less than 5 at%, more preferably less than 4 at%, and even more preferably less than 3 at%.
  • the lower limit of the OC max -OC min difference since preferably as OC max -OC min difference is small, but is 0 atomic%, it is sufficient if more than 0.1 at%.
  • the silicon distribution curve, the oxygen distribution curve, the carbon distribution curve, and the oxygen carbon distribution curve are obtained by using X-ray photoelectron spectroscopy (XPS) measurement and rare gas ion sputtering such as argon in combination.
  • XPS X-ray photoelectron spectroscopy
  • rare gas ion sputtering such as argon in combination.
  • XPS depth profile measurement in which surface composition analysis is sequentially performed while exposing the inside of the sample.
  • a distribution curve obtained by such XPS depth profile measurement can be created, for example, with the vertical axis as the atomic ratio (unit: at%) of each element and the horizontal axis as the etching time (sputtering time).
  • the etching time generally correlates with the distance (L) from the surface of the barrier layer in the film thickness direction of the barrier layer in the film thickness direction. Therefore, “Distance from the surface of the barrier layer in the film thickness direction of the barrier layer” is the distance from the surface of the barrier layer calculated from the relationship between the etching rate and the etching time adopted in the XPS depth profile measurement. can do.
  • the silicon distribution curve, oxygen distribution curve, carbon distribution curve, and oxygen carbon distribution curve can be prepared under the following measurement conditions.
  • Etching ion species Argon (Ar + ) Etching rate (SiO 2 thermal oxide equivalent value): 0.05 nm / sec Etching interval (SiO 2 equivalent value): 10 nm
  • X-ray photoelectron spectrometer Model name “VG Theta Probe” manufactured by Thermo Fisher Scientific Irradiation X-ray: Single crystal spectroscopy AlK ⁇ X-ray spot and its size: 800 ⁇ 400 ⁇ m oval.
  • the film thickness (dry film thickness) of the barrier layer formed by the above plasma CVD method is not particularly limited as long as the above (i) to (iii) are satisfied.
  • the thickness of the barrier layer per layer is preferably 20 to 3000 nm, more preferably 50 to 2500 nm, and particularly preferably 100 to 1000 nm. With such a film thickness, the gas barrier film can exhibit excellent gas barrier properties and the effect of suppressing / preventing cracking during bending.
  • each barrier layer has a film thickness as mentioned above.
  • the barrier layer is substantially uniform in the film surface direction (direction parallel to the surface of the barrier layer) from the viewpoint of forming a barrier layer having a uniform and excellent gas barrier property over the entire film surface.
  • the barrier layer is substantially uniform in the film surface direction means that the oxygen distribution curve, the carbon distribution curve, and the oxygen carbon are measured at any two measurement points on the film surface of the barrier layer by XPS depth profile measurement.
  • the carbon distribution curve is substantially continuous.
  • the carbon distribution curve is substantially continuous means that the carbon distribution curve does not include a portion where the atomic ratio of carbon changes discontinuously.
  • the carbon distribution curve is calculated from the etching rate and the etching time. In the relationship between the distance (x, unit: nm) from the surface of the barrier layer in the film thickness direction of at least one of the barrier layers, and the atomic ratio of carbon (C, unit: at%), Satisfying the condition expressed by the following formula 1.
  • the barrier layer satisfying all of the above conditions (i) to (iii) may include only one layer or two or more layers. Furthermore, when two or more such barrier layers are provided, the materials of the plurality of barrier layers may be the same or different.
  • the silicon atomic ratio, the oxygen atomic ratio, and the carbon atomic ratio are in the region of 90% or more of the thickness of the barrier layer (i ).
  • the atomic ratio of the content of silicon atoms to the total amount of silicon atoms, oxygen atoms, and carbon atoms in the barrier layer is preferably 20 to 45 at%, More preferably, it is 25 to 40 at%.
  • the atomic ratio of the oxygen atom content to the total amount of silicon atoms, oxygen atoms, and carbon atoms in the barrier layer is preferably 45 to 75 at%, and more preferably 50 to 70 at%.
  • the atomic ratio of the carbon atom content to the total amount of silicon atoms, oxygen atoms, and carbon atoms in the barrier layer is preferably 0.5 to 25 at%, and preferably 1 to 20 at%. More preferred.
  • the method for forming the barrier layer is not particularly limited, and the conventional method and the method can be applied in the same manner or appropriately modified.
  • the barrier layer is preferably formed by a chemical vapor deposition (CVD) method, particularly a plasma chemical vapor deposition method (plasma CVD, plasma-enhanced chemical vapor deposition (PECVD), hereinafter also simply referred to as “plasma CVD method”).
  • CVD chemical vapor deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • the anchor layer-formed base material is disposed on a pair of film forming rollers, and is formed by a plasma CVD method in which plasma is generated by discharging between the pair of film forming rollers.
  • the barrier layer is formed on the second anchor layer by a plasma CVD method in which the anchor layer-formed base material is disposed on a pair of film forming rollers, and plasma is generated by discharging between the pair of film forming rollers.
  • the forming method will be described below.
  • ⁇ Method of forming barrier layer by plasma CVD process As a method of forming the barrier layer according to the present invention on the surface of the base material on which the anchor layer has been formed, it is preferable to employ a plasma CVD method from the viewpoint of gas barrier properties.
  • the plasma CVD method may be a Penning discharge plasma type plasma CVD method.
  • plasma when plasma is generated in the plasma CVD method, it is preferable to generate plasma discharge in a space between a plurality of film forming rollers.
  • a pair of film forming rollers is used, and each of the pair of film forming rollers is used.
  • an anchor layer-formed base material is disposed and discharged between a pair of film forming rollers to generate plasma.
  • a pair of film forming rollers placing the anchor layer-formed base material on the pair of film forming rollers, and discharging between the pair of film forming rollers, While forming the surface part of the anchor layer-formed base material existing on the film forming roller, it is possible to simultaneously form the surface part of the anchor layer-formed base material existing on the other film forming roller.
  • the film formation rate can be doubled compared to the plasma CVD method without using a normal roller, and a film with substantially the same structure can be formed, so in the carbon distribution curve It is possible to at least double the extreme value, and it is possible to efficiently form a layer that satisfies all the above conditions (i) to (iii).
  • the film forming gas used in such a plasma CVD method preferably includes an organic silicon compound and oxygen, and the content of oxygen in the film forming gas is determined by the organosilicon compound in the film forming gas. It is preferable that the amount of oxygen be less than the theoretical oxygen amount necessary for complete oxidation.
  • the barrier layer is preferably a layer formed by a continuous film forming process.
  • the gas barrier film according to the present invention preferably forms the barrier layer on the surface of the anchor layer-formed base material by a roll-to-roll method from the viewpoint of productivity.
  • an apparatus that can be used when manufacturing the barrier layer by such a plasma CVD method is not particularly limited, and includes at least a pair of film forming rollers and a plasma power source, and the pair of film forming processes. It is preferable that the apparatus has a configuration capable of discharging between rollers. For example, when the manufacturing apparatus shown in FIG. 1 is used, the apparatus is manufactured by a roll-to-roll method using a plasma CVD method. It is also possible.
  • FIG. 1 is a schematic diagram showing an example of a manufacturing apparatus that can be suitably used for manufacturing a barrier layer by this manufacturing method.
  • the same or corresponding elements are denoted by the same reference numerals, and redundant description is omitted.
  • the 1 includes a feed roller 32, transport rollers 33, 34, 35, and 36, film forming rollers 39 and 40, a gas supply pipe 41, a plasma generating power source 42, and a film forming roller 39. And magnetic field generators 43 and 44 installed inside 40 and a winding roller 45.
  • a manufacturing apparatus at least the film forming rollers 39 and 40, the gas supply pipe 41, the plasma generating power source 42, and the magnetic field generating apparatuses 43 and 44 are arranged in a vacuum chamber (not shown). ing. Further, in such a manufacturing apparatus 31, the vacuum chamber is connected to a vacuum pump (not shown), and the pressure in the vacuum chamber can be appropriately adjusted by the vacuum pump.
  • each film-forming roller has a power source for plasma generation so that the pair of film-forming rollers (the film-forming roller 39 and the film-forming roller 40) can function as a pair of counter electrodes. 42. Therefore, in such a manufacturing apparatus 31, it is possible to discharge into the space between the film forming roller 39 and the film forming roller 40 by supplying electric power from the plasma generating power source 42. Plasma can be generated in the space between the film roller 39 and the film formation roller 40. In this way, when the film forming roller 39 and the film forming roller 40 are also used as electrodes, the material and design thereof may be appropriately changed so that they can also be used as electrodes.
  • a pair of film-forming roller film-forming rollers 39 and 40
  • the film forming rate can be doubled and a film having the same structure can be formed. Can be at least doubled.
  • magnetic field generators 43 and 44 fixed so as not to rotate even when the film forming roller rotates are provided, respectively.
  • the magnetic field generators 43 and 44 provided on the film forming roller 39 and the film forming roller 40 are respectively a magnetic field generating device 43 provided on one film forming roller 39 and a magnetic field generating device provided on the other film forming roller 40. It is preferable to arrange the magnetic poles so that the magnetic field lines do not cross between them and the magnetic field generators 43 and 44 form a substantially closed magnetic circuit. By providing such magnetic field generators 43 and 44, it is possible to promote the formation of a magnetic field in which magnetic lines of force swell near the opposing surface of each film forming roller 39 and 40, and the plasma is converged on the bulging portion. Since it becomes easy, it is excellent at the point which can improve the film-forming efficiency.
  • the magnetic field generators 43 and 44 provided in the film forming roller 39 and the film forming roller 40 respectively have racetrack-shaped magnetic poles that are long in the roller axis direction, and one magnetic field generator 43 and the other magnetic field generator. It is preferable to arrange the magnetic poles so that the magnetic poles facing to 44 have the same polarity.
  • By providing such magnetic field generators 43 and 44 the opposing space along the length direction of the roller shaft without straddling the magnetic field generator on the roller side where the magnetic lines of force of each of the magnetic field generators 43 and 44 are opposed.
  • a racetrack-like magnetic field can be easily formed in the vicinity of the roller surface facing the (discharge region), and the plasma can be focused on the magnetic field, so a wide anchor wound around the roller width direction. It is excellent in that the barrier layer 3 that is a vapor deposition film can be efficiently formed using the layer-formed substrate 2.
  • the film formation roller 39 and the film formation roller 40 known rollers can be used as appropriate. As such film forming rollers 39 and 40, those having the same diameter are preferably used from the viewpoint of forming a thin film more efficiently. Further, the diameter of the film forming rollers 39 and 40 is preferably in the range of 300 to 1000 mm ⁇ , particularly in the range of 300 to 700 mm ⁇ , from the viewpoint of discharge conditions, chamber space, and the like. If the diameter of the film forming roller is 300 mm ⁇ or more, the plasma discharge space will not be reduced, so there is no deterioration in productivity, and it is avoided that the total heat of the plasma discharge is applied to the anchor layer-formed substrate 2 in a short time.
  • the damage to the anchor layer formed base material 2 can be reduced, and it is preferable.
  • the diameter of the film forming roller is 1000 mm ⁇ or less, it is preferable because practicality can be maintained in terms of apparatus design including uniformity of plasma discharge space.
  • the anchor layer formed base material is placed on a pair of film forming rollers (the film forming roller 39 and the film forming roller 40) so that the surfaces of the anchor layer formed base material 2 face each other. 2 is arranged.
  • a pair of film formation rollers It is possible to form the respective surfaces of the anchor layer-formed substrate 2 existing in the film simultaneously. That is, according to such a manufacturing apparatus, a barrier layer component is deposited on the surface of the anchor layer-formed substrate 2 on the film forming roller 39 by the plasma CVD method, and further the barrier is formed on the film forming roller 40. Since the layer component can be deposited, the barrier layer can be efficiently formed on the surface of the anchor layer-formed substrate 2.
  • the take-up roller 45 is not particularly limited as long as it can take up the gas barrier film 1 in which the barrier layer 3 is formed on the anchor layer-formed base material 2, and is a known roller as appropriate. Can be used.
  • gas supply pipe 41 and the vacuum pump those capable of supplying or discharging the raw material gas at a predetermined speed can be appropriately used.
  • the gas supply pipe 41 as a gas supply means is preferably provided in one of the facing spaces (discharge region; film formation zone) between the film formation roller 39 and the film formation roller 40, and is a vacuum as a vacuum exhaust means.
  • a pump (not shown) is preferably provided on the other side of the facing space.
  • the plasma generating power source 42 a known power source of a plasma generating apparatus can be used as appropriate.
  • a plasma generating power supply 42 supplies power to the film forming roller 39 and the film forming roller 40 connected thereto, and makes it possible to use these as counter electrodes for discharge.
  • Such a plasma generating power source 42 can perform plasma CVD more efficiently, and can alternately reverse the polarity of the pair of film forming rollers (AC power source or the like). Is preferably used.
  • the plasma generating power source 42 can perform plasma CVD more efficiently, the applied power can be set to 100 W to 10 kW, and the AC frequency can be set to 50 Hz to 500 kHz. More preferably, it is possible to do this.
  • the magnetic field generators 43 and 44 known magnetic field generators can be used as appropriate.
  • the anchor layer-formed substrate 2 in addition to the substrate used in the present invention, a substrate in which the barrier layer 3 is previously formed can be used. As described above, by using the anchor layer-formed substrate 2 on which the barrier layer 3 is previously formed, it is possible to increase the thickness of the barrier layer 3.
  • the barrier layer according to the present invention can be produced by appropriately adjusting the speed. That is, using the manufacturing apparatus 31 shown in FIG. 1, a discharge is generated between a pair of film forming rollers (film forming rollers 39 and 40) while supplying a film forming gas (raw material gas, etc.) into the vacuum chamber.
  • the film forming gas (raw material gas or the like) is decomposed by plasma, and on the surface of the anchor layer formed substrate 2 on the film forming roller 39 and on the surface of the anchor layer formed substrate 2 on the film forming roller 40
  • the barrier layer 3 is formed by a plasma CVD method.
  • a racetrack-shaped magnetic field is formed in the vicinity of the roller surface facing the facing space (discharge region) along the length direction of the roller axes of the film forming rollers 39 and 40, and the plasma is converged on the magnetic field. For this reason, when the anchor layer-formed substrate 2 passes through the point A of the film forming roller 39 and the point B of the film forming roller 40 in FIG.
  • the maximum value of the carbon distribution curve is formed in the barrier layer.
  • the anchor layer-formed substrate 2 passes through the points C1 and C2 of the film forming roller 39 and the points C3 and C4 of the film forming roller 40 in FIG. The local minimum is formed. For this reason, five extreme values are usually generated for two film forming rollers. Further, the distance between the extreme values of the barrier layer (the difference between the distance (L) from the surface of the barrier layer in the thickness direction of the barrier layer at one extreme value of the carbon distribution curve and the extreme value adjacent to the extreme value) (Absolute value) can be adjusted by the rotation speed of the film forming rollers 39 and 40 (base material transport speed).
  • the anchor layer-formed substrate 2 is conveyed by the delivery roller 32, the film formation roller 39, and the like, respectively, so that the anchor layer is formed by a roll-to-roll continuous film formation process.
  • the barrier layer 3 is formed on the surface of the formed substrate 2 (on the surface of the second anchor layer).
  • a raw material gas, a reactive gas, a carrier gas, or a discharge gas can be used alone or in combination of two or more.
  • the source gas in the film-forming gas used for forming the barrier layer 3 can be appropriately selected and used according to the material of the barrier layer 3 to be formed.
  • a source gas for example, an organic silicon compound containing silicon or an organic compound gas containing carbon can be used.
  • organosilicon compounds examples include hexamethyldisiloxane (HMDSO), hexamethyldisilane (HMDS), 1,1,3,3-tetramethyldisiloxane, vinyltrimethylsilane, methyltrimethylsilane, hexamethyldisilane.
  • HMDSO hexamethyldisiloxane
  • HMDS hexamethyldisilane
  • 1,1,3,3-tetramethyldisiloxane vinyltrimethylsilane
  • methyltrimethylsilane hexamethyldisilane.
  • Methylsilane dimethylsilane, trimethylsilane, diethylsilane, propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane (TMOS), tetraethoxysilane (TEOS), phenyltrimethoxysilane, methyltriethoxy
  • TMOS tetramethoxysilane
  • TEOS tetraethoxysilane
  • phenyltrimethoxysilane methyltriethoxy
  • Examples include silane and octamethylcyclotetrasiloxane.
  • hexamethyldisiloxane and 1,1,3,3-tetramethyldisiloxane are preferable from the viewpoints of handling properties of the compound and gas barrier properties of the resulting barrier layer.
  • organosilicon compounds can be used alone or in combination of two or more.
  • organic compound gas containing carbon examples include methane, ethane, ethylene, and acetylene.
  • an appropriate source gas is selected according to the type of the barrier layer 3.
  • a reactive gas may be used in addition to the raw material gas.
  • a gas that reacts with the raw material gas to become an inorganic compound such as an oxide or a nitride can be appropriately selected and used.
  • a reaction gas for forming an oxide for example, oxygen or ozone can be used.
  • a reactive gas for forming nitride nitrogen and ammonia can be used, for example. These reaction gases can be used singly or in combination of two or more. For example, when forming an oxynitride, a reaction gas for forming an oxide and a nitride are formed. It can be used in combination with a reaction gas.
  • a carrier gas may be used as necessary in order to supply the source gas into the vacuum chamber.
  • a discharge gas may be used as necessary in order to generate plasma discharge.
  • carrier gas and discharge gas known ones can be used as appropriate, for example, rare gases such as helium, argon, neon, xenon; hydrogen can be used.
  • the ratio of the source gas and the reactive gas is the reaction gas that is theoretically necessary for completely reacting the source gas and the reactive gas. It is preferable not to make the ratio of the reaction gas excessive rather than the ratio of the amount. By not excessively increasing the ratio of the reactive gas, the barrier layer 3 formed is excellent in that excellent barrier properties and bending resistance can be obtained. Further, when the film forming gas contains the organosilicon compound and oxygen, the amount is less than the theoretical oxygen amount necessary for complete oxidation of the entire amount of the organosilicon compound in the film forming gas. It is preferable.
  • hexamethyldisiloxane organosilicon compound, HMDSO, (CH 3 ) 6 Si 2 O
  • oxygen (O 2 ) oxygen
  • the preferred ratio of the raw material gas to the reactive gas in the film forming gas will be described in more detail.
  • a film-forming gas containing hexamethyldisiloxane (HMDSO, (CH 3 ) 6 Si 2 O) as a source gas and oxygen (O 2 ) as a reactive gas is reacted by plasma CVD to form a silicon-oxygen-based system
  • HMDSO, (CH 3 ) 6 Si 2 O hexamethyldisiloxane
  • O 2 oxygen
  • the amount of oxygen required to completely oxidize 1 mol of hexamethyldisiloxane is 12 mol. Therefore, a uniform silicon dioxide film is formed when oxygen is contained in the film forming gas in an amount of 12 moles or more per mole of hexamethyldisiloxane and a uniform silicon dioxide film is formed (a carbon distribution curve exists). Therefore, it becomes impossible to form a barrier layer that satisfies all of the above conditions (i) to (iii).
  • the amount of oxygen is set to a stoichiometric ratio of 12 with respect to 1 mole of hexamethyldisiloxane so that the reaction of the above reaction formula 1 does not proceed completely. It is preferable to make it less than a mole.
  • the raw material hexamethyldisiloxane and the reaction gas oxygen are supplied from the gas supply unit to the film formation region to form a film, so the molar amount of oxygen in the reaction gas Even if the (flow rate) is 12 times the molar amount (flow rate) of the raw material hexamethyldisiloxane (flow rate), the reaction cannot actually proceed completely, and the oxygen content is reduced. It is considered that the reaction is completed only when a large excess is supplied compared to the stoichiometric ratio (for example, in order to obtain silicon oxide by complete oxidation by CVD, the molar amount (flow rate) of oxygen is changed to the hexamethyldioxide raw material.
  • the molar amount (flow rate) of oxygen with respect to the molar amount (flow rate) of the raw material hexamethyldisiloxane is preferably an amount of 12 times or less (more preferably 10 times or less) which is the stoichiometric ratio. .
  • the molar amount of oxygen relative to the molar amount (flow rate) of hexamethyldisiloxane in the deposition gas is preferably greater than 0.1 times the molar amount (flow rate) of hexamethyldisiloxane, more preferably greater than 0.5 times.
  • the pressure (degree of vacuum) in the vacuum chamber can be appropriately adjusted according to the type of the raw material gas, but is preferably in the range of 0.5 Pa to 50 Pa.
  • an electrode drum connected to the plasma generating power source 42 (in this embodiment, the film forming roller 39) is used.
  • the power applied to the power source can be adjusted as appropriate according to the type of the source gas, the pressure in the vacuum chamber, and the like. It is preferable to be in the range. If such an applied power is 100 W or more, the generation of particles can be sufficiently suppressed, and if it is 10 kW or less, the amount of heat generated during film formation can be suppressed, and the substrate during film formation can be suppressed. An increase in surface temperature can be suppressed. Therefore, it is excellent in that wrinkles can be prevented during film formation without causing the substrate to lose heat.
  • the conveyance speed (line speed) of the anchor layer-formed substrate 2 can be adjusted as appropriate according to the type of source gas, the pressure in the vacuum chamber, etc., but should be in the range of 0.25 to 100 m / min. Is preferable, and a range of 0.5 to 20 m / min is more preferable. If the line speed is 0.25 m / min or more, generation of wrinkles due to heat in the substrate can be effectively suppressed. On the other hand, if it is 100 m / min or less, it is excellent at the point which can ensure sufficient film thickness as a barrier layer, without impairing productivity.
  • the barrier layer according to the present invention is formed by plasma CVD using the plasma CVD apparatus (roll-to-roll method) having the counter roll electrode shown in FIG. It is characterized by doing.
  • This is excellent in flexibility (flexibility) and mechanical strength, especially when transported by roll-to-roll, when mass-produced using a plasma CVD apparatus (roll-to-roll method) having a counter roll electrode.
  • Such a manufacturing apparatus is also excellent in that it can inexpensively and easily mass-produce gas barrier films that are required for durability against temperature changes used in solar cells and electronic components.
  • the barrier layer according to the present invention may be formed by a method (coating method) in which a coating film formed by applying a liquid containing a silicon compound is reformed.
  • the silicon compound is not particularly limited as long as a coating solution containing a silicon compound can be prepared. Specific examples thereof include compounds described in paragraphs “0110” to “0114” of JP2011-143577A.
  • polysilazane such as perhydropolysilazane and organopolysilazane; polysiloxane such as silsesquioxane, etc. are preferable in terms of film formation, fewer defects such as cracks, and less residual organic matter, and high gas barrier performance.
  • Polysilazane is more preferable, and perhydropolysilazane is particularly preferable because the barrier performance is maintained even when bent and under high temperature and high humidity conditions.
  • Polysilazane is a polymer having a silicon-nitrogen bond, such as SiO 2 , Si 3 N 4 having a bond such as Si—N, Si—H, or N—H, and ceramics such as both intermediate solid solutions SiO x N y. It is a precursor inorganic polymer. More preferred are polysilazanes described in paragraphs “0051” to “0058” of JP2013-022799A.
  • the solvent for preparing the coating solution for forming the silicon compound modified layer is not particularly limited as long as it can dissolve the silicon compound, but water and reactive groups (for example, hydroxyl group) that easily react with the silicon compound.
  • concentration of the coating solution for forming a silicon compound modified layer and the catalyst and additive contained in the coating solution for forming a silicon compound modified layer can also be applied with appropriate reference to JP2013-022799A. .
  • sol-gel method described in JP-A-2005-231039 can also be employed as a method for forming the silicon compound modified layer.
  • Method of applying a coating solution for forming a silicon compound modified layer As a method for applying the silicon compound-modified layer forming coating solution, a conventionally known appropriate wet coating method may be employed. Specific examples include a spin coating method, a roll coating method, a flow coating method, an ink jet method, a spray coating method, a printing method, a dip coating method, a casting film forming method, a bar coating method, and a gravure printing method.
  • the coating thickness can be appropriately set according to the purpose.
  • the coating thickness per barrier layer is preferably about 10 nm to 10 ⁇ m after drying, more preferably 15 nm to 1 ⁇ m, and even more preferably 20 to 500 nm. If the film thickness is 10 nm or more, sufficient barrier properties can be obtained, and if it is 10 ⁇ m or less, stable coating properties can be obtained during layer formation, and high light transmittance can be realized.
  • the coating film After applying the coating solution, it is preferable to dry the coating film.
  • the organic solvent contained in the coating film can be removed. At this time, all of the organic solvent contained in the coating film may be dried or may be partially left. Even when a part of the organic solvent is left, a suitable barrier layer can be obtained. The remaining solvent can be removed later.
  • the drying temperature of the coating film varies depending on the substrate to be applied, but is preferably 50 to 200 ° C.
  • the drying temperature is preferably set to 150 ° C. or less in consideration of deformation of the substrate due to heat.
  • the temperature can be set by using a hot plate, oven, furnace or the like.
  • the drying time is preferably set to a short time. For example, when the drying temperature is 150 ° C., the drying time is preferably set within 30 minutes.
  • the drying atmosphere may be any condition such as an air atmosphere, a nitrogen atmosphere, an argon atmosphere, a vacuum atmosphere, or a reduced pressure atmosphere with a controlled oxygen concentration.
  • a coating film obtained by applying a coating solution for forming a silicon compound modified layer includes a step of removing moisture before or during the modification treatment. Also good. This is a preferred form from the viewpoint of promoting the dehydration reaction of the barrier layer converted to silanol by removing water before or during the modification treatment.
  • the modification treatment of the barrier layer formed by the coating method in the present invention refers to a conversion reaction of a silicon compound into silicon oxide or silicon oxynitride.
  • the gas barrier film of the present invention as a whole has a gas barrier property. The process which forms the inorganic thin film of the level which can contribute to expression.
  • the conversion reaction of the silicon compound to silicon oxide or silicon oxynitride can be applied by appropriately selecting a known method.
  • Specific examples of the modification treatment include plasma treatment, ultraviolet irradiation treatment, and heat treatment.
  • modification by heat treatment formation of a silicon oxide film or a silicon oxynitride layer by a substitution reaction of a silicon compound requires a high temperature of 450 ° C. or higher, so that it is difficult to adapt to a flexible substrate such as plastic. . For this reason, it is preferable to perform the heat treatment in combination with other reforming treatments.
  • a plasma treatment capable of a conversion reaction at a lower temperature or a conversion reaction by ultraviolet irradiation treatment is preferable.
  • the barrier layer may be a single layer or a laminated structure of two or more layers.
  • each barrier layer may have the same composition or a different composition.
  • the barrier layer may consist of only a layer formed by a vacuum film forming method, or may consist of only a layer formed by a coating method, A combination of a layer formed by a vacuum film forming method and a layer formed by a coating method may be used. Preferably, it is a form having both a layer formed by a vacuum film forming method and a layer formed by a coating method.
  • the surface hardness (hereinafter also simply referred to as SHc) of the barrier layer measured by the nanoindentation method is preferably 3.0 to 10.0 GPa, more preferably 3.5 to 6.0 GPa.
  • SHc surface hardness of the barrier layer closest to the second anchor layer
  • the SHc can be controlled by the type of material used for the barrier layer, the conditions at the time of film formation, and the like.
  • the SHa, the SHb, and the SHc satisfy both the following formulas a and b.
  • the gas barrier film of the present invention may have a smooth layer (underlying layer, primer layer) between the surface of the base material having the barrier layer, preferably between the base material and the first anchor layer.
  • the smooth layer is provided for flattening the rough surface of the substrate on which protrusions and the like are present, or for filling the unevenness and pinholes generated in the barrier layer with the protrusions existing on the resin base material.
  • Such a smooth layer may be formed of any material, but preferably includes a carbon-containing polymer, and more preferably includes a carbon-containing polymer. That is, it is preferable that the gas barrier film of the present invention further has a smooth layer containing a carbon-containing polymer between the resin base material and the first anchor layer.
  • the smooth layer also contains a carbon-containing polymer, preferably a curable resin.
  • the curable resin is not particularly limited, and the active energy ray curable resin or the thermosetting material obtained by irradiating the active energy ray curable material or the like with an active energy ray such as an ultraviolet ray to be cured is heated. And thermosetting resins obtained by curing. These curable resins may be used alone or in combination of two or more.
  • Examples of the active energy ray-curable material used for forming the smooth layer include a composition containing an acrylate compound, a composition containing an acrylate compound and a mercapto compound containing a thiol group, epoxy acrylate, urethane acrylate, and polyester.
  • Examples include compositions containing polyfunctional acrylate monomers such as acrylates, polyether acrylates, polyethylene glycol acrylates, and glycerol methacrylates.
  • an organic / inorganic hybrid hard coat material OPSTAR (registered trademark) series compound formed by bonding an organic compound having a polymerizable unsaturated group to silica fine particles
  • OPSTAR registered trademark
  • compositions any mixture of the above-mentioned compositions, and an active energy ray-curable material containing a reactive monomer having at least one photopolymerizable unsaturated bond in the molecule. If there is no particular limitation. A more specific example is the same as the material described in the section of the first anchor layer, and the description is omitted here.
  • the smoothness of the smooth layer is a value expressed by the surface roughness specified in JIS B 0601: 2001, and the maximum cross-sectional height Rt (p) is preferably 10 nm or more and 30 nm or less.
  • the surface roughness is calculated from an uneven cross-sectional curve continuously measured by an AFM (atomic force microscope) with a detector having a stylus having a minimum tip radius, and the measurement direction is several tens of times with a stylus having a minimum tip radius. It is the roughness related to the amplitude of fine irregularities measured in a section of ⁇ m many times.
  • AFM atomic force microscope
  • the thickness of the smooth layer is not particularly limited, but is preferably in the range of 0.1 to 10 ⁇ m.
  • an anchor coat layer On the surface of the resin base material according to the present invention, an anchor coat layer may be formed as an easy adhesion layer for the purpose of improving adhesiveness (adhesion).
  • the anchor coat agent used in this anchor coat layer include polyester resin, isocyanate resin, urethane resin, acrylic resin, ethylene / vinyl alcohol resin, vinyl-modified resin, epoxy resin, modified styrene resin, modified silicon resin, and alkyl titanate. Can be used alone or in combination of two or more.
  • a commercially available product may be used as the anchor coating agent. Specifically, a siloxane-based UV curable polymer solution (manufactured by Shin-Etsu Chemical Co., Ltd., “X-12-2400” in 3% isopropyl alcohol) can be used.
  • the above-mentioned anchor coating agent is coated on a substrate by a known method such as roll coating, gravure coating, knife coating, dip coating, spray coating, and the like, and is coated by drying and removing the solvent, diluent, etc. Can do.
  • the application amount of the anchor coating agent is preferably about 0.1 to 5 g / m 2 (dry state).
  • a commercially available base material with an easy-adhesion layer may be used.
  • the anchor coat layer can be formed by a vapor phase method such as physical vapor deposition or chemical vapor deposition.
  • a vapor phase method such as physical vapor deposition or chemical vapor deposition.
  • an inorganic film mainly composed of silicon oxide can be formed for the purpose of improving adhesion and the like.
  • the thickness of the anchor coat layer is not particularly limited, but is preferably about 0.5 to 10.0 ⁇ m.
  • the gas barrier film of the present invention can further have a bleed-out preventing layer.
  • the bleed-out prevention layer is used for the purpose of suppressing the phenomenon that unreacted oligomers migrate from the resin base material to the surface when the film having the smooth layer is heated and contaminate the contact surface. It is provided on the opposite surface of the substrate.
  • the bleed-out prevention layer may basically have the same configuration as the smooth layer as long as it has this function.
  • Compounds that can be included in the bleed-out prevention layer include polyunsaturated organic compounds having two or more polymerizable unsaturated groups in the molecule, or one polymerizable unsaturated group in the molecule.
  • Hard coat agents such as unitary unsaturated organic compounds can be mentioned.
  • Matting agents may be added as other additives.
  • the matting agent inorganic particles having an average particle diameter of about 0.1 to 5 ⁇ m are preferable.
  • inorganic particles one or more of silica, alumina, talc, clay, calcium carbonate, magnesium carbonate, barium sulfate, aluminum hydroxide, titanium dioxide, zirconium oxide and the like can be used in combination. .
  • An overcoat layer may be provided on the barrier layer according to the present invention.
  • organic resins such as organic monomers, oligomers, and polymers can be preferably used. These organic resins preferably have a polymerizable group or a crosslinkable group, contain these organic resins, and are formed by coating from an organic resin composition coating solution containing a polymerization initiator, a crosslinking agent, or the like as necessary.
  • the layer is preferably cured by applying light irradiation treatment or heat treatment.
  • the “crosslinkable group” is a group that can crosslink the binder polymer by a chemical reaction that occurs during light irradiation treatment or heat treatment.
  • the chemical structure is not particularly limited as long as it is a group having such a function.
  • Examples of the functional group capable of addition polymerization include cyclic ether groups such as an ethylenically unsaturated group and an epoxy group / oxetanyl group.
  • the functional group which can become a radical by light irradiation may be sufficient, and as such a crosslinkable group, a thiol group, a halogen atom, an onium salt structure etc. are mentioned, for example.
  • ethylenically unsaturated groups are preferable, and include functional groups described in paragraphs “0130” to “0139” of JP-A-2007-17948 (corresponding to US Patent Application Publication No. 2006/263720). .
  • the gas barrier film of the present invention can be preferably used for a device whose performance is deteriorated by chemical components (oxygen, water, nitrogen oxide, sulfur oxide, ozone, etc.) in the air.
  • the device include electronic devices such as an organic EL element, a liquid crystal display element (LCD), a thin film transistor, a touch panel, electronic paper, and a solar cell (PV). From the viewpoint that the effect of the present invention can be obtained more efficiently, it is preferably used for an organic EL device or a solar cell, and particularly preferably used for an organic EL device.
  • the gas barrier film of the present invention can also be used for device film sealing. That is, it is a method of providing the gas barrier film of the present invention on the surface of the device itself as a support.
  • the device may be covered with a protective layer before providing the gas barrier film.
  • the gas barrier film of the present invention can also be used as a device substrate or a film for sealing by a solid sealing method.
  • the solid sealing method is a method in which after a protective layer is formed on a device, an adhesive layer and a gas barrier film are stacked and cured.
  • an adhesive agent A thermosetting epoxy resin, a photocurable acrylate resin, etc. are illustrated.
  • Organic EL device Examples of organic EL elements using a gas barrier film are described in detail in JP-A-2007-30387.
  • the reflective liquid crystal display device has a configuration including a lower substrate, a reflective electrode, a lower alignment film, a liquid crystal layer, an upper alignment film, a transparent electrode, an upper substrate, a ⁇ / 4 plate, and a polarizing film in order from the bottom.
  • the gas barrier film in the present invention can be used as the transparent electrode substrate and the upper substrate. In the case of color display, it is preferable to further provide a color filter layer between the reflective electrode and the lower alignment film, or between the upper alignment film and the transparent electrode.
  • the transmissive liquid crystal display device includes, in order from the bottom, a backlight, a polarizing plate, a ⁇ / 4 plate, a lower transparent electrode, a lower alignment film, a liquid crystal layer, an upper alignment film, an upper transparent electrode, an upper substrate, a ⁇ / 4 plate, and a polarization It has a structure consisting of a film. In the case of color display, it is preferable to further provide a color filter layer between the lower transparent electrode and the lower alignment film, or between the upper alignment film and the transparent electrode.
  • the type of the liquid crystal cell is not particularly limited, but more preferably, a TN type (Twisted Nematic), an STN type (Super Twisted Nematic), a HAN type (Hybrid Aligned Nematic), a VA type (Vertical Alignment Electric), an EC type, a Bt type OCB type (Optically Compensated Bend), IPS type (In-Plane Switching), and CPA type (Continuous Pinwheel Alignment) are preferable.
  • a TN type Transmission Nematic
  • STN type Super Twisted Nematic
  • HAN type Hybrid Aligned Nematic
  • VA type Very Alignment Electric
  • an EC type a Bt type OCB type (Optically Compensated Bend)
  • IPS type In-Plane Switching
  • CPA type Continuous Pinwheel Alignment
  • the gas barrier film of the present invention can also be used as a sealing film for solar cell elements.
  • the gas barrier film of the present invention is preferably sealed so that the barrier layer is closer to the solar cell element.
  • the solar cell element in which the gas barrier film of the present invention is preferably used is not particularly limited. For example, it is a single crystal silicon solar cell element, a polycrystalline silicon solar cell element, a single junction type, or a tandem structure type.
  • Amorphous silicon-based solar cell elements III-V group compound semiconductor solar cell elements such as gallium arsenide (GaAs) and indium phosphorus (InP), II-VI group compound semiconductor solar cell elements such as cadmium tellurium (CdTe), I-III- such as copper / indium / selenium system (so-called CIS system), copper / indium / gallium / selenium system (so-called CIGS system), copper / indium / gallium / selenium / sulfur system (so-called CIGS system), etc.
  • Group VI compound semiconductor solar cell element dye-sensitized solar cell element, organic solar cell element, etc. And the like.
  • the solar cell element is a copper / indium / selenium system (so-called CIS system), a copper / indium / gallium / selenium system (so-called CIGS system), copper / indium / gallium / selenium / sulfur.
  • CIS system copper / indium / selenium system
  • CIGS system copper / indium / gallium / selenium system
  • sulfur copper / indium / gallium / selenium / sulfur.
  • a group I-III-VI compound semiconductor solar cell element such as a system (so-called CIGSS system) is preferable.
  • JP-T-10-512104 corresponding to US Pat. No. 5,776,803
  • JP-A-5-127822 JP-A-2002-48913
  • Examples thereof include a touch panel and electronic paper described in JP-A-2000-98326.
  • the gas barrier film of the present invention can also be used as an optical member.
  • the optical member include a circularly polarizing plate.
  • a circularly polarizing plate can be produced by laminating a ⁇ / 4 plate and a polarizing plate using the gas barrier film in the present invention as a substrate. In this case, the lamination is performed so that the angle formed by the slow axis of the ⁇ / 4 plate and the absorption axis of the polarizing plate is 45 °. It is preferable to use such a polarizing plate that is stretched in a direction of 45 ° with respect to the longitudinal direction (MD).
  • the mask was removed in a vacuum state, and aluminum was vapor-deposited on the entire surface of one side of the sheet and temporarily sealed.
  • the vacuum state is released, and it is immediately transferred to a dry nitrogen gas atmosphere, and a quartz glass with a thickness of 0.2 mm is bonded to the aluminum vapor-deposited surface via an ultraviolet curing resin for sealing (manufactured by Nagase ChemteX Corporation).
  • the water vapor transmission rate evaluation sample was produced by irradiating ultraviolet rays to cure and adhere the resin to perform main sealing.
  • the obtained sample (evaluation cell) was stored under high temperature and high humidity of 60 ° C. and 90% RH, and permeated into the cell from the corrosion amount of metallic calcium based on the method described in JP-A-2005-283561. The amount of moisture was calculated.
  • Each gas barrier film was subjected to forced deterioration treatment by storing for 100 hours under an environment of a temperature of 85 ° C. and a relative humidity of 85% RH as a high temperature and high humidity condition.
  • the total light transmittance (%) and HAZE (%) of the sample after the deterioration test were measured using an ultraviolet visible near infrared spectrophotometer UV3600 (manufactured by Shimadzu Corporation).
  • each anchor layer was applied on a 125 ⁇ m thick PET substrate using a wire bar so that the dry film thickness was 4 ⁇ m, then dried at 80 ° C. for 3 minutes, and air was then used using a high-pressure mercury lamp. Below, it hardened
  • the surface hardness of the obtained anchor layer was measured according to the nanoindentation method described above. Specifically, the surface hardness was measured using a scanning probe microscope (SPI3800N manufactured by Seiko Instruments Inc.) and Triboscope manufactured by Hysitoron. Note that a cube corner tip (90 °) was used as an indenter.
  • the surface hardness of the barrier layer was also measured by the nanoindentation method as described above.
  • Example 1 Production of gas barrier film 1 (Preparation of resin base material)
  • a polycarbonate film manufactured by Teijin Chemicals Ltd., WR-S5, thickness 100 ⁇ m, hereinafter also simply referred to as PC film
  • PC film thickness 100 ⁇ m
  • Aika Eyetron Z842-1 manufactured by Aika Industry Co., Ltd.
  • Aika Eyetron Z842-1 which is an ultraviolet curable resin
  • the dry film thickness was 1 ⁇ m, and then 3 ° C. at 80 ° C.
  • curing was performed at a dose of 0.5 J / cm 2 under air to form a second anchor layer.
  • a 10 wt% dibutyl ether solution of perhydropolysilazane (AQUAMICA (registered trademark) NN120-10, non-catalytic type, manufactured by AZ Electronic Materials Co., Ltd.) was used as a coating solution.
  • the above-mentioned coating solution is applied to the surface of the anchor layer previously formed with a wireless bar so that the (average) film thickness after drying is 300 nm, and treated for 1 minute in an atmosphere of temperature 85 ° C. and humidity 55% RH.
  • the film was further dried, and further kept in an atmosphere of a temperature of 25 ° C. and a humidity of 10% RH (dew point temperature of ⁇ 8 ° C.) for 10 minutes to perform dehumidification, thereby forming a polysilazane layer.
  • the following ultraviolet irradiation apparatus was installed in the chamber for the polysilazane layer formed above, and nitrogen substitution was performed until the oxygen concentration in the apparatus became 0.1% or less, and a reforming process was performed.
  • Excimer lamp light intensity 130 mW / cm 2 (172 nm)
  • Distance between sample and light source 1mm
  • Stage heating temperature 70 ° C
  • Oxygen concentration in the irradiation device 1.0%
  • Excimer lamp irradiation time 5 seconds.
  • the above-described polysilazane layer laminating and modifying processes were repeated once more to form a barrier layer in which two 300 nm thick layers were laminated, and the gas barrier film 1 was completed.
  • Example 2 Production of gas barrier film 2
  • a gas barrier film 2 was produced in the same manner as in Example 1 except that the anchor layer was formed as follows.
  • Aika Eyetron Z842-1 manufactured by Aika Industry Co., Ltd.
  • Aika Eyetron Z842-1 which is an ultraviolet curable resin
  • the dry film thickness was 1 ⁇ m, and then 3 ° C. at 80 ° C.
  • curing was performed at a dose of 0.5 J / cm 2 under air to form a second anchor layer.
  • Example 3 Production of gas barrier film 3 Similar to Example 2, except that Unidic (registered trademark) V-4025 (manufactured by DIC Corporation) was used instead of MP-6103 to form a layer with a dry film thickness of 1 ⁇ m to form the first anchor layer. Thus, a gas barrier film 3 was produced.
  • Unidic registered trademark
  • V-4025 manufactured by DIC Corporation
  • Example 4 Production of gas barrier film 4
  • Unidic registered trademark
  • V-4025 manufactured by DIC Corporation
  • OPSTAR registered
  • Z842-1 OPSTAR
  • a gas barrier film 4 was produced in the same manner as in Example 2 except that a layer having a dry film thickness of 1 ⁇ m was formed using Z7527 (trademark) (manufactured by JSR Corporation) to form the second anchor layer.
  • Example 5 Production of gas barrier film 5
  • a layer with a dry film thickness of 1 ⁇ m is formed by using Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.) instead of MP-6103 to form the first anchor layer, and OPSTAR (instead of Aika Eyetron Z842-1)
  • a gas barrier film 5 was produced in the same manner as in Example 2 except that a layer having a dry film thickness of 1 ⁇ m was formed using registered trademark Z7527 (manufactured by JSR Corporation) to form a second anchor layer.
  • Example 6 Production of gas barrier film 6
  • a layer with a dry film thickness of 2 ⁇ m is formed by using Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.) instead of MP-6103 to form a first anchor layer, and OPSTAR (instead of Aika Eyetron Z842-1)
  • a gas barrier film 6 was produced in the same manner as in Example 2 except that a layer having a dry film thickness of 4 ⁇ m was formed using a registered trademark Z7527 (manufactured by JSR Corporation) to form a second anchor layer.
  • Example 7 Production of gas barrier film 7
  • a layer with a dry film thickness of 3 ⁇ m is formed by using Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.) instead of MP-6103 to form the first anchor layer, and OPSTAR (instead of Aika Eyetron Z842-1)
  • a gas barrier film 7 was produced in the same manner as in Example 2 except that a layer having a dry film thickness of 2 ⁇ m was formed using a registered trademark Z7527 (manufactured by JSR Corporation) to form a second anchor layer.
  • Example 8 Production of gas barrier film 8
  • a layer with a dry film thickness of 5 ⁇ m is formed using Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.) instead of MP-6103 to form the first anchor layer, and OPSTAR (
  • a gas barrier film 8 is produced in the same manner as in Example 2 except that a layer having a dry film thickness of 1.5 ⁇ m is formed using Z7527 (registered trademark) (registered trademark) as a second anchor layer. did.
  • Example 9 Production of gas barrier film 9) Except that the resin base material was changed to a stretched polycarbonate film having a thickness of 50 ⁇ m (manufactured by Teijin Chemicals Ltd., WR-S148, hereinafter also simply referred to as e-PC), the same as in Example 8, A gas barrier film 9 was produced.
  • Example 10 Production of gas barrier film 10
  • the resin substrate was changed to a stretched triacetyl cellulose film (Konica Minolta Advanced Layer Co., Ltd., trade name Konica Minolta VA-TAC, thickness 60 ⁇ m, hereinafter also simply referred to as e-TAC).
  • e-TAC Konica Minolta Advanced Layer Co., Ltd., trade name Konica Minolta VA-TAC, thickness 60 ⁇ m, hereinafter also simply referred to as e-TAC.
  • e-TAC Konica Minolta Advanced Layer Co., Ltd., trade name Konica Minolta VA-TAC, thickness 60 ⁇ m
  • Example 11 Production of gas barrier film 11
  • a gas barrier film 11 was produced in the same manner as in Example 8 except that the barrier layer was formed by the following method.
  • the base material on which the first anchor layer and the second anchor layer are formed is mounted on a film forming apparatus as shown in FIG. 1 so that the surface opposite to the anchor layer is a surface in contact with the roll, A barrier layer was formed to a thickness of 500 nm on the second anchor layer under the following film formation conditions.
  • ⁇ Film formation conditions Feed rate of source gas (hexamethyldisiloxane, HMDSO): 50 sccm (Standard Cubic Centimeter per Minute) Supply amount of oxygen gas (O 2 ): 500 sccm Degree of vacuum in the vacuum chamber: 3Pa Applied power from the power source for plasma generation: 0.8 kW Frequency of power source for plasma generation: 70 kHz Film conveyance speed: 0.8 m / min.
  • HMDSO hexamethyldisiloxane
  • O 2 oxygen gas
  • Example 12 Production of gas barrier film 12
  • a gas barrier film 12 is produced in the same manner as in Example 11, except that the resin base material is changed to a triacetyl cellulose film (manufactured by Konica Minolta Advanced Layer Co., Ltd., trade name Konica Minolta Tack KC6UY, thickness 60 ⁇ m). did.
  • Example 13 Production of gas barrier film 13
  • the resin substrate was changed to a stretched triacetylcellulose film (Konica Minolta Advanced Layer Co., Ltd., trade name Konica Minolta VA-TAC, thickness 60 ⁇ m)
  • Konica Minolta VA-TAC thickness 60 ⁇ m
  • Example 1 Production of gas barrier film 14
  • a gas barrier film 14 was produced in the same manner as in Example 1 except that the anchor layer was only a layer having a dry film thickness of 5 ⁇ m using Aika Eyetron Z842-1 (manufactured by Aika Industry Co., Ltd.).
  • Example 2 Production of gas barrier film 15
  • a gas barrier film 15 was produced in the same manner as in Example 10 except that the anchor layer was only a layer having a dry film thickness of 1.5 ⁇ m using OPSTAR (registered trademark) Z7527 (manufactured by JSR Corporation).
  • Example 3 Production of gas barrier film 16
  • a layer having a dry film thickness of 80 nm was formed using a melamine resin, which is a thermosetting resin, instead of Z842-1 (heating temperature: 80 ° C., heating time: 3 minutes), except that the second anchor layer was used.
  • a gas barrier film 16 was produced in the same manner as Example 1.
  • Aika Itron Z842-1 manufactured by Aika Industry Co., Ltd.
  • Aika Itron Z842-1 manufactured by Aika Industry Co., Ltd.
  • curing was performed at a dose of 0.5 J / cm 2 under air to form a first anchor layer.
  • a mixture (1: 4 weight ratio) of a polyester resin and an isocyanate resin, which is a thermosetting resin, was applied to the surface of the first anchor layer with a wire bar so that the dry film thickness was 100 nm, and then 80 ° C. For 3 minutes to form a second anchor layer.
  • the gas barrier films (Examples 1 to 13) of the present invention have excellent water vapor barrier properties and excellent storage stability.

Landscapes

  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention porte sur un film barrière aux gaz ayant une excellente stabilité au stockage, en particulier dans des conditions difficiles (c'est-à-dire des conditions de haute température et d'humidité élevée). Le film barrière aux gaz comprend, dans l'ordre, un substrat en résine, une première couche d'ancrage contenant une résine durcissable, une résine durcissable par rayonnement d'énergie active, une seconde couche d'ancrage ayant une dureté de surface, mesurée par la technique de nanopénétration, différente de celle de la première couche d'ancrage et une couche barrière contenant un composé inorganique.
PCT/JP2014/050993 2013-02-18 2014-01-20 Film barrière aux gaz WO2014125877A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016043141A1 (fr) * 2014-09-16 2016-03-24 コニカミノルタ株式会社 Film barrière contre les gaz
WO2016097705A3 (fr) * 2014-12-19 2017-07-27 Fujifilm Manufacturing Europe Bv Matériaux en feuilles transparents

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0970917A (ja) * 1995-09-07 1997-03-18 Oike Ind Co Ltd 透明ガスバリア性積層体
JPH11171937A (ja) * 1997-12-12 1999-06-29 Jsr Corp 液状硬化性樹脂組成物
JP2000229383A (ja) * 1999-02-09 2000-08-22 Asahi Glass Co Ltd 透明被覆成形品
JP2000229384A (ja) * 1999-02-12 2000-08-22 Asahi Glass Co Ltd 透明被覆成形品
JP2002137323A (ja) * 2000-11-06 2002-05-14 Mitsubishi Chemicals Corp 帯電防止性ガスバリアフィルム
JP2011143577A (ja) * 2010-01-13 2011-07-28 Konica Minolta Holdings Inc ガスバリアフィルムの製造方法、ガスバリアフィルム及び有機光電変換素子
JP2012016854A (ja) * 2010-07-07 2012-01-26 Konica Minolta Holdings Inc ガスバリア性フィルム、及び有機光電変換素子、有機エレクトロルミネッセンス素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0970917A (ja) * 1995-09-07 1997-03-18 Oike Ind Co Ltd 透明ガスバリア性積層体
JPH11171937A (ja) * 1997-12-12 1999-06-29 Jsr Corp 液状硬化性樹脂組成物
JP2000229383A (ja) * 1999-02-09 2000-08-22 Asahi Glass Co Ltd 透明被覆成形品
JP2000229384A (ja) * 1999-02-12 2000-08-22 Asahi Glass Co Ltd 透明被覆成形品
JP2002137323A (ja) * 2000-11-06 2002-05-14 Mitsubishi Chemicals Corp 帯電防止性ガスバリアフィルム
JP2011143577A (ja) * 2010-01-13 2011-07-28 Konica Minolta Holdings Inc ガスバリアフィルムの製造方法、ガスバリアフィルム及び有機光電変換素子
JP2012016854A (ja) * 2010-07-07 2012-01-26 Konica Minolta Holdings Inc ガスバリア性フィルム、及び有機光電変換素子、有機エレクトロルミネッセンス素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016043141A1 (fr) * 2014-09-16 2016-03-24 コニカミノルタ株式会社 Film barrière contre les gaz
WO2016097705A3 (fr) * 2014-12-19 2017-07-27 Fujifilm Manufacturing Europe Bv Matériaux en feuilles transparents

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