WO2014124308A3 - Multi-level graphene devices and methods for forming same - Google Patents
Multi-level graphene devices and methods for forming same Download PDFInfo
- Publication number
- WO2014124308A3 WO2014124308A3 PCT/US2014/015384 US2014015384W WO2014124308A3 WO 2014124308 A3 WO2014124308 A3 WO 2014124308A3 US 2014015384 W US2014015384 W US 2014015384W WO 2014124308 A3 WO2014124308 A3 WO 2014124308A3
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- graphene
- level
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- forming same
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 13
- 229910021389 graphene Inorganic materials 0.000 title abstract 13
- 239000010410 layer Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000002086 nanomaterial Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
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Abstract
Multi-level graphene devices and methods for forming such devices are provided. A first foundation material is deposited onto a substrate thereby forming a first foundation layer. Graphene is grown on the first foundation layer thereby forming a first graphene level having one or more graphene stacks at least one of which comprises a first graphene based nanostructure. An interlayer is formed on the first graphene level. A second foundation material is deposited onto the interlayer thereby forming a second foundation layer. Graphene is grown on the second foundation layer thereby forming a second graphene level. Like the first graphene level, the second graphene level includes one or more graphene stacks at least one of which comprises a second graphene based nanostructure.
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US201361762776P | 2013-02-08 | 2013-02-08 | |
US61/762,776 | 2013-02-08 |
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WO2014124308A2 WO2014124308A2 (en) | 2014-08-14 |
WO2014124308A3 true WO2014124308A3 (en) | 2014-10-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105825886A (en) * | 2016-03-31 | 2016-08-03 | 东南大学 | Micro-electromechanical multivalued memory device |
CN112708401B (en) * | 2020-12-24 | 2021-07-27 | 广东工业大学 | Processing system and method for graphene film with micro thermal structure pattern |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10490314B2 (en) | 2015-08-12 | 2019-11-26 | King Abdulaziz University | Graphene oxide free-standing film and methods for shielding electromagnetic radiation at microwave frequencies |
CN112766346A (en) * | 2021-01-12 | 2021-05-07 | 合肥黎曼信息科技有限公司 | Multi-example learning method based on graph convolution network |
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US20110157772A1 (en) * | 2009-12-28 | 2011-06-30 | Aruna Zhamu | Spacer-modified nano graphene electrodes for supercapacitors |
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EP2463893A2 (en) * | 2010-12-07 | 2012-06-13 | Samsung Electronics Co., Ltd. | Graphene structure and method of fabricating the same |
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US8664642B1 (en) * | 2013-03-15 | 2014-03-04 | Solan, LLC | Nonplanar graphite-based devices having multiple bandgaps |
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2014
- 2014-02-07 WO PCT/US2014/015384 patent/WO2014124308A2/en active Application Filing
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US20120034707A1 (en) * | 2008-06-02 | 2012-02-09 | Datta Sujit S | Atomically precise nanoribbons and related methods |
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EP2463893A2 (en) * | 2010-12-07 | 2012-06-13 | Samsung Electronics Co., Ltd. | Graphene structure and method of fabricating the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105825886A (en) * | 2016-03-31 | 2016-08-03 | 东南大学 | Micro-electromechanical multivalued memory device |
CN112708401B (en) * | 2020-12-24 | 2021-07-27 | 广东工业大学 | Processing system and method for graphene film with micro thermal structure pattern |
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