CN105825886A - Micro-electromechanical multivalued memory device - Google Patents
Micro-electromechanical multivalued memory device Download PDFInfo
- Publication number
- CN105825886A CN105825886A CN201610200300.3A CN201610200300A CN105825886A CN 105825886 A CN105825886 A CN 105825886A CN 201610200300 A CN201610200300 A CN 201610200300A CN 105825886 A CN105825886 A CN 105825886A
- Authority
- CN
- China
- Prior art keywords
- graphene electrodes
- contact
- graphene
- electrodes
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention discloses a micro-electromechanical multivalued memory device. The device comprises a silicon substrate, as well as a first graphene electrode and an actuator which are overhung on the silicon substrate through silicon support columns respectively, and a second graphene electrode arranged at the end of the actuator and arranged by being corresponding to the first graphene electrode, metal electrodes are both arranged on the upper sides of the first graphene electrode and the second graphene electrode, and the actuator is in insulation connection with the second graphene electrode. The micro-electromechanical multivalued memory device disclosed by the invention has simple structure, high reliability, high sensitivity, large numerical value distinction degree, low energy consumption and strong anti-interference ability.
Description
Technical field
The present invention relates to a kind of micro electronmechanical multivalued memory device using Graphene or graphene oxide, belong to sophisticated semiconductor material and devices field.
Background technology
Memorizer includes the equipment that a class can save historical data.Internal memory within such as CD, disk, flash memory and computer etc..These equipment use different methods for recording data.Such as, the mode of usage of CD-ROM light carries out data record, and disk uses the mode of magnetic to carry out data record, and internal memory then makes the mode of electricity consumption carry out data record.All these modes have a common ground, namely carry out the record of data based on stagnant method of whirling, and data medium can be changed between " 0 " and " 1 " two states, and make data have certain keeping quality.It practice, whirl, stagnant characteristic is the basis of all memory technologies, and the material or the mechanism that are generally of stagnant characteristic of whirling can be applied to memory technology.In recent years, along with gradually going deep into of semiconductor technology research, the method that there has been proposed multilevel storage.Multilevel storage proposes, and data are in addition to may be at " 0 " and " 1 " two states, it is also possible to be in other stable intermediatenesses, namely may be at such as " 0 ", " 1 ", " 2 ", " 3 " etc. state.If being capable of " 0 ", " 1 ", " 2 ", " 3 " etc. state, it is likely that realize computing and the storage of the mode such as ternary or the quaternary.This computing mode can improve arithmetic speed and the storage capacity of computer greatly.
At present, it is achieved the method for multilevel storage is mainly the characteristic by some material with multiple different intermediateness, such as TiO2, V2O5, silicon oxide etc..The shortcomings such as it is indefinite that but these materials have mechanism, and stability is not good enough, however, it is difficult to device.
Summary of the invention
Technical problem:The present invention provides a kind of simple in construction, reliability high, highly sensitive, the micro electronmechanical multivalued memory device that value distinguishing degree is big, energy consumption is low, capacity of resisting disturbance is strong.
Technical scheme:The micro electronmechanical multivalued memory device of the present invention, including silicon substrate, respectively by unsettled the first Graphene electrodes being arranged on described silicon substrate of silicon support column and executor, be arranged on described executor end the second Graphene electrodes being correspondingly arranged with the first Graphene electrodes, being provided with metal electrode on the upside of described first Graphene electrodes and the second Graphene electrodes, described executor is connected with the second Graphene electrodes insulation.
Further, in device of the present invention, described executor is magnetostriction, electrostriction, thermic stretches, cause mechanical shifting mechanism that is flexible or that singly deposit or parts, it is possible to applying magnetic field, voltage, be heated, produce telescopic shape change under electrostatic field or Mechanical Moving effect, it is achieved the first Graphene electrodes and the break-make of the second Graphene electrodes.
Further, in device of the present invention, described first Graphene electrodes and the second Graphene electrodes are stretchable flexible structure.
Further, in device of the present invention, described first Graphene electrodes and the second Graphene electrodes are cellular, the spongy or wavy stretchable flexible structure of band.
Further, in device of the present invention, the Young's modulus of the first Graphene electrodes and the second Graphene electrodes is more than 1KPa and less than 1GPa.
Further, in device of the present invention, between the first Graphene electrodes and the second Graphene electrodes, the fracture strength of contact point is more than 5MPa and less than 10GPa.
Further, in device of the present invention, during first Graphene electrodes and the mutual convergence of the second Graphene electrodes, the contact point of more than 1 can be sequentially formed between the two, first Graphene electrodes and the second Graphene electrodes are during being separated from each other, and contact point between the two can disconnect according to the order contrary with the order in mutual approach procedure.
Further, in device of the present invention, the contact point between described first Graphene electrodes and the second Graphene electrodes have contact whirl residual effect should, what each contact produced whirls stagnant window size more than 0.1 nanometer.
Further, in device of the present invention, the multiple contact points between described first Graphene electrodes and the second Graphene electrodes, the size of the stagnant window of whirling being smaller than described later contact of the contact that mutual approach procedure is initially formed and its later contact.
Further, in device of the present invention, the size of the stagnant window of whirling being smaller than last contact point of the multiple contact points between described first Graphene electrodes and the second Graphene electrodes, first contact point that mutual approach procedure is initially formed and last contact point.
The present invention proposes to use Graphene or graphene oxide or gold as the method for multivalued memory device, utilizes the mechanically and electrically characteristic that material is special, builds a kind of memory device based on new mechanism.Can apply to the purposes of multilevel storage.
Beneficial effect:The present invention compared with prior art, has the advantage that
1. simple in construction: only include two relative electrodes.At least one electrode therein can be driven by modes such as piezoelectricity.There is no the plural layers in traditional devices, the structure of upper/lower electrode, there is the better simply feature of structure.
2. reliability is high: present invention utilizes deformation and the contact performance of Graphene.Grapheme material has the maximum intensity being currently known material, and its mechanical performance and fatigue resistance are excellent, and its electric conductivity is also superior to major part metal material, and the contact of formation is stable.Above characteristic ensure that device has good reliability.
The most highly sensitive, value distinguishing degree is big: is different from traditional memory device and uses the movement of electronics or hole to realize the differentiation that in Digital Logic, "ON" or "Off" state are carried out, this device directly uses the break-make of device to carry out switching the storage of numerical quantities, being " on-off " element on practical significance, therefore its value distinguishing degree can be the biggest.
4. energy consumption is low.Traditional devices still has electric current to pass through when "Off" state, and the device of the present invention due to when the contact of device is in "Off" state between contact no current pass through, so device power consumption is relatively low.
5. capacity of resisting disturbance is strong: owing to the mechanical strength of grapheme material is high, electrical properties is stable, and its capacity of resisting disturbance is stronger.It addition, select different type of drive can carry out storing for different external environments and do not respond to other interference signals, it has good selective response characteristic and preferable capacity of resisting disturbance.
Accompanying drawing explanation
Fig. 1 is the state-location diagram of diadic memory device.
Fig. 2 is original state figure, the state of the A point in corresponding diagram 1.
Fig. 3 is the state diagram that electrode has just contacted, the state of the B point in corresponding diagram 1, and now electric current can produce saltus step, is i.e. skipped to state " 1 " by state " 0 ".
Fig. 4 is the electrode fixed electrode further towards rear extruding opposite, can be with the state of the C point in corresponding diagram 1
Fig. 5 is the schematic diagram that movable electrode returns to original state, and fixing electrode receives stretching, but electrical contact still keeps.
Fig. 6 is schematic diagram during two-value storage state, and the region (dash area) that between two electrodes, initial distance should meet, after this initial distance is also storage pulse, stores the last length after being complete.
Fig. 7 is schematic diagram during three value storage states, and the region (dash area) that between two electrodes, initial distance should meet, after this initial distance is also storage pulse, stores the last length after being complete.
Fig. 8 is schematic diagram during Four state storage state, the region (dash area) that between two electrodes, initial distance should meet, and after this initial distance is also storage pulse, stores the last length after being complete.
Fig. 9 is the schematic diagram of the situation of Four state storage device original state (" 0 " state), and wherein left electrodes is fixed, and right electrodes is movable.1,2,3 represents position, three contacts respectively.
Figure 10 is Four state storage device one state situation schematic diagram when just setting up.
Figure 11 is Four state storage device " 2 " state situation schematic diagram when just setting up, and now the position at the first place, contact occurs dL1 strain.
Figure 12 is Four state storage device " 3 " state situation schematic diagram when just setting up, and now the position at the first place, contact occurs dL1 ' strain, and the position at the second place, contact occurs dL2 strain.
Figure 13 is Four state storage device movable electrode situation schematic diagram when returning to initial position, now there is dL1 ' ' strain in the position at the first place, contact, there is dL2 ' ' strain in the position of the second place, contact, the position at the 3rd place, contact occurs dL3 ' ' strain.
Figure 14 is the schematic diagram of the Four state storage device a kind of possible structure when two electrodes all have prominent contact.
Figure 15 uses nano silver wire as conductive electrode, the memory device that grapheme material builds as memory carrier.Wherein left electrodes is fixed, and right electrodes is driven by piezoelectric device.Atrous is silver electrode, translucent for loose Graphene.
The original state that two Graphene electrodes of Figure 16 are not in contact with
The state slightly compressed after two Graphene electrodes contacts of Figure 17
Two Graphene electrodes move toward one another of Figure 18 still the most undivided state
Two further move toward one another of Graphene electrodes of Figure 19 still the most undivided state, now left electrodes receives stretching
Figure 20 electrode contact point disconnects after being stretched
Electric current-location diagram corresponding to the storage of Figure 21 two-value.
Figure 22 original state, two electrodes not in contact with
Two electrodes of Figure 23 form first contact
Two electrodes of Figure 24 further towards, first contact keep, second contact is not yet formed
Two electrodes of Figure 25 further towards, first contact keep, second contact formed
Two electrodes of Figure 26 initially move off, and first contact keeps, and second contact disconnects
Two electrodes of Figure 27 further away from, second contact disconnect, first contact disconnect
Electric current-location diagram corresponding to Figure 28 tri-value storage.
Figure 29 is device architecture schematic diagram of the present invention, and the structure that two of which electrode is depended on separately, can be individually the most movable.
Figure 30 is device architecture schematic diagram of the present invention, and the structure that two of which electrode is depended on is on one substrate.
In figure: 1 be silicon support column, 2 be silicon substrate, 3 be executor, 4 be the first Graphene electrodes, 5 be the second Graphene electrodes.
Detailed description of the invention
Below in conjunction with embodiment and Figure of description, the present invention is further illustrated.
In Fig. 1, it is assumed that the position of an electrode is fixed, the position of another electrode changes.X-direction is the direction that two electrodes are close.State shown in Y-axis can correspond to size of current.High electric current corresponds to state " 1 ", and low current corresponds to state " 0 ".The wherein moving direction of movable electrode in the corresponding cycle of the direction of arrow instruction.Namely electrode is the most close, separates afterwards.A, B, C, D corresponding diagram 2 respectively is to contact condition illustrated in Figure 5.
In Fig. 2 to Fig. 5, right side band square represents drive mechanism.Reticulate pattern Regional Representative's Graphene or graphene oxide.
Figure 15 to Figure 21 is the accompanying drawings of embodiment one: wherein two-value storage, and electrode both sides all use the grapheme material being attached on nano silver wire, form the contact structures containing a contact.Grapheme material therein has loose structure, to ensure that it has suitably compression and elongation eleasticity factor.
Figure 21 to Figure 28 is the accompanying drawings of embodiment two: wherein three value storage, electrode both sides all use the grapheme material being attached on nano silver wire, form the contact structures containing a contact.Grapheme material therein has loose structure, to ensure that it has suitably compression and elongation eleasticity factor.
The memory device of the present invention is made up of the two poles of the earth, and at least a part of which has a pole to be Graphene or graphene oxide composite material.The effect reached, preferably two electrode is all by Graphene or graphene oxide composite material.Two electrodes should unsettled be placed on substrate.Electrode end is fixed with substrate and is formed and electrically connects.Voltage U0 is applied between the two poles of the earth.During original state, two electrodes do not contact with each other.Not having electric current to pass through in device, device is in " 0 " state.Graphene electrodes should be spring-like flexible structure, such as cellular (such as accompanying drawing embodiment), spongy, band is wavy, cannot be the structure incompressible, non-stretchable used in conventional semiconductor devices, to ensure the some requirements described in latter acts process.Meanwhile, Graphene should not contain the material of surface contamination, so that it easily forms electrical contact for cleaning.
Graphene or graphene oxide composite material used in it should be processed into and have multiple contact that can be used for and contacting with face electrode.When only one lateral electrode uses Graphene or graphene oxide composite material, opposite side electrode corresponding thereto can be the electrode material of surfacing, can be especially the electrode material of surfacing in the side relative with Graphene or graphene oxide.Now, in order to realize monodrome storage, namely " 0 " and the storage of " 1 ", Graphene or graphene oxide composite material are processed into only one of which contact, and the electrode of opposite side is forming conductive path after Graphene or graphene oxide composite material contact, now device is in one state (noting: " 0 " or one state can the most arbitrarily define)；When only one lateral electrode uses Graphene or graphene oxide composite material, in order to realize two-value storage, namely " 0 ", " 1 " and the storage of " 2 ", Graphene or graphene oxide composite material are processed into containing two contacts.When electrode and first contact of opposite side, the conducting of device local, the electric current that its inflow is certain, device is in one state.When electrode and second contact of opposite side, device is in " 2 " state, now first and second contact all with the contact electrode on opposite, the electric current flowing to device increases；The like can be pushed into the situation of more multilevel storage.
Above-mentioned different contact should have the spacing different from face electrode.Such as, in turn, it is assumed that on electrode, the distance of first contact and face electrode is L1, the distance of second contact and face electrode is L2, and the distance of the 3rd contact and face electrode is L3, then should meet L1 < L2 < L3.By that analogy.Namely two electrode multiple electric shocks during close to each other sequentially form, adjacent contacts has a certain distance poor during being sequentially formed.
The Graphene used or graphene oxide composite material should have good stretching and compression property, it should have suitable coefficient of elasticity.Specifically, it is assumed that the tensile strength of contact be Pl(wherein P=Fcl/S, Fcl be contact tensile break stress, S is contact area), elongation eleasticity factor is kl；Comprcssive strength be Py(wherein P=Fcy/S, Fcy be contact compression failure stress, S is contact area), elasticity of compression coefficient is ky, then for the memorizer of an independent contact, it should at least meet kl × L1 < Fcl.Memorizer for two contacts, it should at least meet kl × L2 < Fcl, ky × (L2-L1) < Fcy.
Two electrodes can all use Graphene or graphene oxide composite material, and be processed into the form containing multiple prominent contacts, its operation principle is similarly to the above.When two electrodes are all processed into containing multiple prominent contact, do not limited by the electrode material that the side relative with Graphene or graphene oxide described in above-mentioned 2nd can be surfacing, it is only necessary to note making the contact of two relative electrodes good contact just may be used.
In the present invention, storing for two-value, two Graphene electrodes can produce electrical contact after there is relative movement, and forms a contact point.Distance between the conductive characteristic of contact point and two electrodes has stagnant characteristic of whirling.For three value storages, two Graphene electrodes can produce electrical contact after there is relative movement, and sequentially form first contact point and the second contact point.Distance between the conductive characteristic of each contact point and two electrodes has stagnant characteristic of whirling.By that analogy, can be to form other multilevel storage mode.
The rewriting of memorizer can make any one in two electrodes or both moving simultaneously realize.Such as there being three value storages of two contacts, " 2 " to be rewritten as " 1 ", then need to be disconnected by second contact point and retain first contact.Being similar to, whole erasings (being rewritten as " 0 ") of memorizer can also use this mode to make the disconnection of all contacts just may be used.
Electrode can be carried out relative to the motion of position in the way of using piezoelectricity；Or use thermic flexible or magnetostrictive effect is carried out；Or simple mechanical displacement effect.Specifically, it is assumed that use piezoelectricity mode carry out, use three value storage modes, namely twice electrode can be sequentially formed two electric contacts, there are " 0 ", " 1 ", " 2 " three kinds of states.The most possible a kind of mode is the electrode of fixing side, and the electrode of opposite side and piezoelectricity start end are fixed.When piezoelectric is encouraged and produces a displacement by an electric pulse, it promotes the right electrodes electrode movement towards left side, when displacement makes to form contact corresponding to the contact of one state time, the in-situ annealing effect formed due to contact makes contact position form certain contact strength, this intensity can ensure that when electric pulse removes, remains in that at piezoelectric reset back contact and be connected to, such that it is able to realize the good preservation of one state.Being similar to, when the displacement of piezoelectric makes to form contact corresponding to the contact of " 2 " state time (now the contact of one state also should have been formed), two electrical contact contacts remain in that connection, such that it is able to the good preservation of " 2 " state of realization.
Further, about the size of contact contact.Principle based on the present invention, contact can provide the path of conduction after being formed.Therefore each contact contact can have relatively uniform size, so has the change of uniform conductive current between different states during switching.The reading of external circuit can be facilitated.
The initial phase of two electrodes is adjusted the distance and is positioned at the stagnant window of whirling given by " position-state relation " curve.Owing to each contact point has the stagnant curve of whirling of oneself, the stagnant curve of whirling of integral device is that several contact point is whirled the superposition of stagnant characteristic, then the stagnant window of whirling of device should be that several contact point is whirled position corresponding to the lap of stagnant window.As Figure 6-Figure 8.Device in the present invention, stagnant window size of whirling that each contact produces (size of the shadow region of namely Fig. 6-illustrated in Figure 8) is more than 0.1 nanometer.
Assuming that the contact that two-value storage uses has stagnant window width of whirling and corresponds to dx, time initial, the distance of two electrodes is L, and what outside " 1 " excitation caused both distances is reduced to dL, then in order to realize two-value storage, need to meet dL > L.
Assuming that in two contacts that three values storages use, what pair of contact was corresponding whirl, and stagnant window width corresponds to dx1, and time initial, the distance of two electrodes is L1, what outside " 1 " excitation caused both distances is reduced to dL1；Stagnant window width of whirling corresponding to the second pair of contact corresponds to dx2, and time initial, the distance of two electrodes is L2, and what outside " 2 " excitation caused both distances is reduced to dL2.Then pair of contact is had, dL1 L1；Second pair of contact is had, dL2 > L2.By that analogy, more many-valued storage should at least meet similar relation.
In the present invention, if using non-the most such as magnetic field (magnetostriction), electric field (electrostriction), the mode such as thermal field (field cause flexible) or simple Mechanical Moving stores, then itself and traditional electric storage mode difference.Now can be considered as a kind of new storage method.What it stored corresponds to magnetic field, electric field, thermal field or the size of simple Mechanical Moving.And playback mode is electrical readout mode.
In other embodiments of the present invention:
1. using the graphene sponge of Young's modulus 1GPa to prepare two electrodes, the intensity of two electrode formation contact points is 10GPa, and the stagnant window cun of whirling of formation is 2 nanometers.Then it can serve as a kind of micro-electromechanical memory part.
2. using the graphene sponge of Young's modulus 1KPa to prepare two electrodes, the intensity of two electrode formation contact points is 5MPa, and the stagnant window cun of whirling of formation is 100 microns.Then it can serve as a kind of micro-electromechanical memory part.
3. using the graphene sponge of Young's modulus 500KPa to prepare two electrodes, the intensity of two electrode formation contact points is 1GPa, and the stagnant window cun of whirling of formation is 500 microns.Then it can serve as a kind of micro-electromechanical memory part.
Above content is to combine concrete preferred implementation further description made for the present invention, it is impossible to think the present invention be embodied as be confined to these explanations.It is noted that, for those skilled in the art; without departing from the inventive concept of the premise; some equivalent replacements, modification and improvement can also be made; the claims in the present invention are improved and technical scheme after equivalent by these, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. a micro electronmechanical multivalued memory device, it is characterized in that, this device include silicon substrate (2), respectively by unsettled the first Graphene electrodes (4) being arranged on described silicon substrate (2) of silicon support column (1) and executor (3), be arranged on described executor (3) end the second Graphene electrodes (5) being correspondingly arranged with the first Graphene electrodes (4), described first Graphene electrodes (4) and the second Graphene electrodes (5) upside are provided with metal electrode, and described executor (3) is connected with the second Graphene electrodes (5) insulation.
Micro electronmechanical multivalued memory device the most according to claim 1, it is characterized in that, described executor (3) is magnetostriction, electrostriction, thermic stretches, cause mechanical shifting mechanism that is flexible or that singly deposit or parts, it is possible to applying magnetic field, voltage, be heated, produce telescopic shape change under electrostatic field or Mechanical Moving effect, it is achieved the first Graphene electrodes (4) and the break-make of the second Graphene electrodes (5).
Micro electronmechanical multivalued memory device the most according to claim 1, it is characterised in that described first Graphene electrodes (4) and the second Graphene electrodes (5) are stretchable flexible structure.
Micro electronmechanical multivalued memory device the most according to claim 3, it is characterised in that described first Graphene electrodes (4) and the second Graphene electrodes (5) are cellular, the spongy or wavy stretchable flexible structure of band.
5. according to the micro electronmechanical multivalued memory device described in claim 1,2,3 or 4, it is characterised in that the Young's modulus of described first Graphene electrodes (4) and the second Graphene electrodes (5) is more than 1KPa and less than 1GPa.
6. according to the micro electronmechanical multivalued memory device described in claim 1,2,3 or 4, it is characterised in that between described first Graphene electrodes (4) and the second Graphene electrodes (5), the fracture strength of contact point is more than 5MPa and less than 10GPa.
7. according to the micro electronmechanical multivalued memory device described in claim 1,2,3 or 4, it is characterized in that, during described first Graphene electrodes (4) and the second Graphene electrodes (5) mutually convergence, the contact point of more than 1 can be sequentially formed between the two, during first Graphene electrodes (4) and the second Graphene electrodes (5) are separated from each other, contact point between the two can disconnect according to the order contrary with the order in mutual approach procedure.
Micro electronmechanical multivalued memory device the most according to claim 7, it is characterized in that, contact point between described first Graphene electrodes (4) and the second Graphene electrodes (5) have contact whirl residual effect should, what each contact produced whirls stagnant window size more than 0.1 nanometer.
Micro electronmechanical multivalued memory device the most according to claim 8, it is characterized in that, the size of the stagnant window of whirling being smaller than described later contact of the multiple contact points between described first Graphene electrodes (4) and the second Graphene electrodes (5), the contact that mutual approach procedure is initially formed and its later contact.
Micro electronmechanical multivalued memory device the most according to claim 8, it is characterized in that, the size of the stagnant window of whirling being smaller than last contact point described of the multiple contact points between described first Graphene electrodes (4) and the second Graphene electrodes (5), first contact point that mutual approach procedure is initially formed and last contact point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610200300.3A CN105825886B (en) | 2016-03-31 | 2016-03-31 | A kind of micro electronmechanical multivalued memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610200300.3A CN105825886B (en) | 2016-03-31 | 2016-03-31 | A kind of micro electronmechanical multivalued memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105825886A true CN105825886A (en) | 2016-08-03 |
| CN105825886B CN105825886B (en) | 2018-06-01 |
Family
ID=56526484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610200300.3A Active CN105825886B (en) | 2016-03-31 | 2016-03-31 | A kind of micro electronmechanical multivalued memory device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105825886B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110362208A (en) * | 2019-07-17 | 2019-10-22 | 京东方科技集团股份有限公司 | Deformation unit, display panel and driving circuit for touch feedback |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7948042B2 (en) * | 2008-03-03 | 2011-05-24 | The Regents Of The University Of California | Suspended structures |
| CN102257610A (en) * | 2008-09-23 | 2011-11-23 | 新加坡国立大学 | Graphene memory cell and fabrication methods thereof |
| CN103035842A (en) * | 2013-01-04 | 2013-04-10 | 福州大学 | Organic resistive random access memory based on graphene quantum dot doping and preparation method thereof |
| CN103824938A (en) * | 2014-03-03 | 2014-05-28 | 南京大学 | Resistive random access memory structure and preparation method thereof |
| WO2014124308A3 (en) * | 2013-02-08 | 2014-10-09 | Solan, LLC | Multi-level graphene devices and methods for forming same |
-
2016
- 2016-03-31 CN CN201610200300.3A patent/CN105825886B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7948042B2 (en) * | 2008-03-03 | 2011-05-24 | The Regents Of The University Of California | Suspended structures |
| CN102257610A (en) * | 2008-09-23 | 2011-11-23 | 新加坡国立大学 | Graphene memory cell and fabrication methods thereof |
| CN103035842A (en) * | 2013-01-04 | 2013-04-10 | 福州大学 | Organic resistive random access memory based on graphene quantum dot doping and preparation method thereof |
| WO2014124308A3 (en) * | 2013-02-08 | 2014-10-09 | Solan, LLC | Multi-level graphene devices and methods for forming same |
| CN103824938A (en) * | 2014-03-03 | 2014-05-28 | 南京大学 | Resistive random access memory structure and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| KHURANA等: "Multilevel resistive memory switching in graphene sandwiched organic polymer heterostructure", 《CARBON》 * |
| 史文贤: "石墨烯电极及其在有机光电子器件中的应用", 《科技信息》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110362208A (en) * | 2019-07-17 | 2019-10-22 | 京东方科技集团股份有限公司 | Deformation unit, display panel and driving circuit for touch feedback |
| CN110362208B (en) * | 2019-07-17 | 2021-05-04 | 京东方科技集团股份有限公司 | Deformation unit for tactile feedback, display panel and driving circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105825886B (en) | 2018-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111771280B (en) | Three-dimensional nonvolatile ferroelectric memory | |
| CN102257610B (en) | Graphene memory cell and fabrication methods thereof | |
| JP7052148B2 (en) | Fluctuating low resistance line non-volatile memory element and its operation method | |
| CN102640314B (en) | Coupling structure and method of forming such | |
| CN1197167C (en) | Information processing structure | |
| CN103296922B (en) | Nanopiezoelectric generator and its manufacture method | |
| JP2021518654A (en) | Vertical transmon cubit device | |
| JP2009536015A (en) | Electrostatic actuator | |
| CN108417574B (en) | Method for manufacturing SOI-based ferroelectric memory | |
| KR101366133B1 (en) | Fiber for Fabricating Fabric Using Polymer Piezoelectrics and Fabrication Method Thereof | |
| CN103636016A (en) | 4-terminal piezoelectronic transistor (PET) | |
| CN101023493A (en) | An organic ferroelectric or electret memory circuit and a method for making same | |
| CN105825886A (en) | Micro-electromechanical multivalued memory device | |
| CN103065679A (en) | Electric field write-in and resistance readout solid-state storage component, storer and read-write method of storer | |
| CN103050623A (en) | Second-order memristor with multi-resistance state characteristic and modulation method thereof | |
| CN207398179U (en) | A kind of magnetoelectricity Memory Storage Unit structure | |
| CN113013252B (en) | Synaptic transistor and preparation method thereof | |
| US20130009143A1 (en) | Photo sensor and method of fabricating the same | |
| CN106299109B (en) | Complementary type resistance-variable storing device and its non-destructive read out method | |
| EP2862187A1 (en) | Mems lifetime enhancement | |
| CN103840080A (en) | Voltage control storage based on one-dimensional cadmium doping zinc oxide nanowire and preparing method of voltage control storage | |
| KR102246248B1 (en) | Variable low resistance area based electronic device and controlling thereof | |
| KR20210028064A (en) | Memory device | |
| CN113013248A (en) | Synaptic transistor and preparation method thereof | |
| US20220254982A1 (en) | Technologies for microelectromechanical systems with composable piezoelectric actuators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |