WO2014121563A1 - Display substrate, display panel and method for fabricating display substrate - Google Patents

Abstract

A display substrate, a display panel comprising the display substrate, and a method for fabricating the display substrate. The display substrate comprises: a photovoltaic conversion component (21) and a capacitor (21) located on the display substrate. An end (3) of the capacitor (21) is connected to an electrode (5) of the photovoltaic conversion component (21), and the other end (1) of the capacitor (21) is connected to the other electrode (7) of the photovoltaic conversion component (21); and the photovoltaic conversion component (21) is used for converting energy of light absorbed by the photovoltaic conversion component (21) into electric energy, and the capacitor (21) is used for storing the electric energy converted by the photovoltaic conversion component (21), thereby improving the endurance capability of a device.

Description

 Display substrate, display panel, and method of manufacturing display substrate

 The present invention relates to a display substrate, a display panel, and a method of manufacturing a display substrate. Background technique

 Currently, there are more and more high-performance mobile terminals. The power consumption of high-performance mobile terminals is also relatively increased. Moreover, a large number of high-performance mobile terminals use touch screens, which greatly increases the power consumption of mobile terminals. The current approach is to reduce the power consumption of the display panel itself, such as using new low-power materials such as organic resin materials, or using higher performance thin film transistors to reduce the power consumption of the display panel. However, there is a limit to the power consumption reduction caused by the device structure itself, which causes the battery life of the mobile phone and the like to be greatly improved, and the power cannot be replenished at any time, and the function of storing excess power in the device after the photoelectric conversion component is fully charged.

 In summary, in the prior art, when low-power materials or high-performance thin film transistors are used to reduce the power consumption of the display panel, the requirements for improving the endurance of the device cannot be sufficiently satisfied. Summary of the invention

 A display substrate provided by the embodiment of the invention includes: a photoelectric conversion component on the display substrate and a capacitor on the display substrate, one end of the capacitor is connected to one electrode of the photoelectric conversion component, The other end of the capacitor is connected to another electrode of the photoelectric conversion member, and the photoelectric conversion member is configured to convert energy of light absorbed by the photoelectric conversion member into electrical energy, and the capacitor is used to store the photoelectric conversion member Converted electrical energy.

A display panel provided by the embodiment of the invention includes the display substrate provided by the embodiment of the invention. The embodiment of the invention further provides a method for manufacturing a display substrate provided by an embodiment of the invention, comprising: forming the photoelectric conversion component and the capacitor on a display substrate; and one end of the capacitor and the photoelectric conversion component One electrode is connected, and the other end of the capacitor is connected to the other electrode of the photoelectric conversion member. DRAWINGS FIG. 1A is a cross-sectional view showing a structure of a color filter substrate in a region where a photoelectric conversion device is located above a capacitor on a color filter substrate when the display substrate is a color filter substrate according to an embodiment of the present invention;

 2a-2d are cross-sectional views showing the structure of a color filter substrate in a region where a capacitor is disposed on a color filter substrate in a region above the photoelectric conversion device when the display substrate is a color filter substrate according to an embodiment of the present invention;

 3a and 3b are cross-sectional views showing the structure of a color filter substrate in a region where only a photoelectric conversion member exists on a color film substrate when the display substrate is a color filter substrate according to an embodiment of the present invention;

 4a and FIG. 4b are cross-sectional views showing the structure of a color filter substrate in a region where only a capacitor exists on a color filter substrate when the display substrate is a color filter substrate according to an embodiment of the present invention;

 5 is a plan view showing a structure of a color filter substrate when the display substrate is a color filter substrate according to an embodiment of the present invention;

 6 is a schematic diagram showing a connection between a photoelectric conversion component on a color filter substrate and an external power supply when the display substrate is a color film substrate according to an embodiment of the present invention;

 7 is a plan view showing the structure of an array substrate after forming data lines, gate lines, and TFTs on the array substrate provided by the embodiment of the present invention;

 8a-8h are cross-sectional views showing the structure of an array substrate including a data line, a gate line, and a TFT when the display substrate is an array substrate according to an embodiment of the present invention;

 FIG. 9 is a flow chart of manufacturing a display substrate according to an embodiment of the present invention. detailed description

Unless otherwise defined, technical terms or scientific terms used herein shall be of ordinary meaning as understood by those of ordinary skill in the art to which the invention pertains. The words "first", "second" and similar terms used in the specification and claims of the invention are not intended to indicate any order, quantity or importance, but are merely used to distinguish different components. Similarly, the words "a", "an", "the" and the like do not denote a quantity limitation, but mean that there is at least one. The words "including" or "comprising", etc., are intended to mean that the elements or objects preceding "including" or "comprising" are intended to encompass the elements or Component or object. "Connected" or "connected" and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Upper", "Bottom", "Left", "Right", etc. are only used to indicate the relative positional relationship. When the absolute position of the object to be described is changed, the relative positional relationship may also change accordingly. The display substrate, the display panel, and the method for manufacturing the display substrate provided by the embodiment of the present invention, by forming a capacitor on the substrate and a photoelectric conversion member capable of converting the absorbed light energy into electrical energy, thereby being a display panel using the display substrate and / or powering the device provided with the display panel, reducing the power consumption of the display panel using the display substrate and/or the device using the display panel.

 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific embodiment of a display substrate, a display panel, and a method of manufacturing a display substrate according to an embodiment of the present invention will be described below with reference to the accompanying drawings.

 A display substrate provided by an embodiment of the invention includes: a photoelectric conversion component on the display substrate and a capacitor on the display substrate, one end of the capacitor is connected to one electrode of the photoelectric conversion component, and the other end of the capacitor is photoelectrically converted The other electrode of the piece is connected; the photoelectric conversion member is for converting energy of light absorbed by the photoelectric conversion member into electric energy, and the capacitor is for storing electric energy converted by the photoelectric conversion member.

 In order to connect one end of the capacitor to one electrode of the photoelectric conversion member, the other end of the capacitor is connected to the other electrode of the photoelectric conversion member, for example, a capacitor can be formed at both ends of the capacitor while forming a capacitor and a photoelectric conversion member, and In the two-pole lead-out line of the photoelectric conversion member, two connection points are arranged at the edge of the display substrate, and the lead wire at one end of the capacitor and the lead wire of one electrode of the photoelectric conversion member are connected to one connection point, and the lead wire at the other end of the capacitor is connected. The leads of the other electrode of the photoelectric conversion member are connected to another wiring point.

 The display substrate may be a color film substrate, and the photoelectric conversion component is located outside the color resistance of the color filter substrate, and the capacitor is located outside the color resistance of the color filter substrate. For example, the color resist may include a red color resist, a blue color resist, and a green color resist, that is, a red, green, and blue filter layer. The color resistance is not limited to three colors of red, green and blue, and may be a combination of red, green, blue and white color resistance.

 Therefore, if the area covered by the capacitor and the photoelectric conversion member exceeds half of the area outside the color resistance of the color filter substrate, the photoelectric conversion member and the capacitor in a partial region on the color filter substrate are stacked, and the color film substrate region is not laminated. A photoelectric conversion member is formed in a portion of the region, and a capacitance is formed in a portion of the region of the other portion of the unstacked color filter substrate. Preferably, the photoelectric conversion member is formed in all of the outer regions of the color film substrate, and the capacitor is formed in the outer region of the color film substrate.

In the region of the color filter substrate on which the photoelectric conversion member is located above the capacitor, a cross-sectional view of the color filter substrate is shown in FIG. 1a, which is an embodiment, and another embodiment is shown in FIG. When the dielectric layer in the capacitor is a light transmissive material, a cross-sectional view of the color filter substrate is shown as an embodiment in FIG. 1c, and another embodiment is shown in FIG. In FIGS. 1a and 1c, the capacitor includes an electrode layer 1 on the glass substrate 17, a dielectric layer 2 on the electrode layer 1 as one end of the capacitor, a common electrode layer 3 on the dielectric layer 2, and a photoelectric conversion member. The common electrode layer 3, the P-type silicon layer 4 on the common electrode layer 3, the I-type silicon layer 5 on the P-type silicon layer 4, the N-type silicon layer 6 on the I-type silicon layer 5, and the N-type An electrode layer 7 on the silicon layer 6 as one electrode of the photoelectric conversion member.

 In FIGS. 1b and 1d, the capacitor includes an electrode layer 1 on the glass substrate 17, a dielectric layer 2 on the electrode layer 1 as one end of the capacitor, and a common electrode layer 3 on the dielectric layer 2; The common electrode layer 3, the N-type silicon layer 6 on the common electrode layer 3, the I-type silicon layer 5 on the N-type silicon layer 6, the P-type silicon layer 4 on the I-type silicon layer 5, and the P-type An electrode layer 7 on the silicon layer 4 as one electrode of the photoelectric conversion member. The N-type silicon layer 6, the I-type silicon layer 5, and the P-type silicon layer 4 constitute a PN junction in the photoelectric conversion element.

 The difference between FIG. 1a and FIG. 1b is that, in FIG. 1a, the N-type silicon layer 6 is located above the I-type silicon layer 5, and the P-type silicon layer 4 is located below the I-type silicon layer 5; and in FIG. 1b, the P-type silicon layer is 4 is located above the I-type silicon layer 5, and the N-type silicon layer 6 is located under the I-type silicon layer 5.

 The difference between FIG. 1c and FIG. 1d is that the N-type silicon layer 6 is located on the I-type silicon layer 5 in FIG.

The P-type silicon layer 4 is located under the I-type silicon layer 5; and in Figure Id, the P-type silicon layer 4 is located on the I-type silicon layer 5, and the N-type silicon layer 6 is located below the I-type silicon layer 5.

 Color resists 16 are also included in Figures la, lb, lc, and Id. In FIGS. 1a and 1b, the color resist 16 is disposed on, for example, the glass substrate 17; in FIGS. 1c and 1d, the color resist 16 is disposed on the dielectric layer 2, and the dielectric layer 2 is formed on, for example, the glass substrate 17, The dielectric layer 2 is formed of a light transmissive material. The dielectric layer 2 in Figures la and lb can be formed of a light transmissive or non-transmissive material.

 In the structures shown in Figs. la, lb, lc, and Id, the common electrode layer 3 serves as the other electrode of the photoelectric conversion member, and serves as the other end of the capacitor. The electrode layer 7 as one electrode of the photoelectric conversion member in the photoelectric conversion member transmits light, so that the light of the backlight is irradiated onto the PN junction in the photoelectric conversion member; the electrode layer 1 and the common electrode layer 3 which are one end of the capacitor in the capacitor At least one of the layers is opaque, and the electrode layer 1 and the common electrode layer 3 are spaced apart from the adjacent color resists 16, so that the stacked black matrix on the color filter substrate can be replaced by the laminated capacitor and the photoelectric conversion member.

In the above-mentioned FIG. 1a-Id, the color film substrate is combined with the array substrate to form a liquid crystal panel. If the capacitor and the photoelectric conversion component are located on the outer surface of the liquid crystal panel, the photoelectric conversion component can absorb the environment other than the backlight. Light, such as natural light, that converts ambient light into electrical energy; that is, the capacitance and light The electric conversion member is located outside the glass substrate 17. In the structure shown in FIG. 1A to FIG. 1D, the color filter substrate and the array substrate are combined to form a liquid crystal panel. If the capacitor and the photoelectric conversion component are located inside the liquid crystal panel, the photoelectric conversion component can absorb the backlight. Light, which turns it into electricity.

 In the region of the color filter substrate where the capacitance is located above the photoelectric conversion member, a cross-sectional view of the color filter substrate is shown in Fig. 2a as an embodiment, and another embodiment is shown in Fig. 2b. When the dielectric layer in the capacitor is transparent, a cross-sectional view of the color filter substrate is shown in Figure 2c as an embodiment, as shown in Figure 2d.

 In FIGS. 2a and 2c, the photoelectric conversion member includes an electrode layer 7 as one electrode of the photoelectric conversion member on the glass substrate 17, an N-type silicon layer 6 on the electrode layer 7 as one electrode of the photoelectric conversion member, An I-type silicon layer 5 on the N-type silicon layer 6, a P-type silicon layer 4 on the I-type silicon layer 5, and a common electrode layer 3 on the P-type silicon layer 4; the capacitor includes the common electrode layer 3, and is located in the common The dielectric layer 2 on the electrode layer 3 is an electrode layer 1 on the dielectric layer 2 as one end of the capacitor.

 In FIGS. 2b and 2d, the photoelectric conversion member includes an electrode layer 7 as one electrode of the photoelectric conversion member on the glass substrate 17, a P-type silicon layer 4 on the electrode layer 7 as one electrode of the photoelectric conversion member, An I-type silicon layer 5 on the P-type silicon layer 4, an N-type silicon layer 6 on the I-type silicon layer 5, and a common electrode layer 3 on the N-type silicon layer 6; the capacitor includes the common electrode layer 3, and is located in the common The dielectric layer 2 on the electrode layer 3 is an electrode layer 1 on the dielectric layer 2 as one end of the capacitor. The N-type silicon layer 6, the I-type silicon layer 5 and the P-type silicon layer 4 constitute a PN junction in the photoelectric conversion element.

 2a and 2b differ in that, in FIG. 2a, the N-type silicon layer 6 is located below the I-type silicon layer 5, and the P-type silicon layer 4 is located above the I-type silicon layer 5; and in FIG. 2b, the P-type silicon layer is 4 is located below the I-type silicon layer 5, and the N-type silicon layer 6 is located above the I-type silicon layer 5. 2c and 2d differ in that, in FIG. 2c, the N-type silicon layer 6 is located under the I-type silicon layer 5, and the P-type silicon layer 4 is located above the I-type silicon layer 5; and in FIG. 2d, the P-type silicon layer is 4 is located below the I-type silicon layer 5, and the N-type silicon layer 6 is located above the I-type silicon layer 5.

 A color resist 16 may also be included in Figures 2a, 2b, 2c, and 2d. In Figs. 2a and 2b, the color resist 16 is disposed on the glass substrate 17; in Figs. 2c and 2d, the color resist 16 is disposed on the dielectric layer 2. The dielectric layer 2 is formed on a glass substrate 17, which is formed of a light transmissive material. The dielectric layer 2 of Figures 2a and 2b can be formed of a light transmissive or non-transmissive material.

In the structure shown in Figs. 2a, 2b, 2c and 2d, the common electrode layer 3 is the other electrode of the photoelectric conversion member, and is the other end of the capacitor. The electrode layer 7 as one electrode of the photoelectric conversion member in the photoelectric conversion member transmits light, so that the light of the external light source is irradiated onto the PN junction in the photoelectric conversion member, and the electrode layer 1 and the common electrode layer which are one end of the capacitor in the capacitor At least one layer in 3 Light transmission. The electrode layer 1 and the common electrode layer 3 are spaced apart from the adjacent color resists 16, so that the stacked black matrix on the color filter substrate can be replaced by the laminated capacitor and the photoelectric conversion member.

 In the structure shown in FIG. 2a to FIG. 2d, the color film substrate is combined with the array substrate to form a liquid crystal panel. If the capacitor and the photoelectric conversion component are located inside the liquid crystal panel, the photoelectric conversion component can absorb the backlight. Ambient light, such as natural light, converts ambient light into electrical energy. The capacitor and the photoelectric conversion member are located inside the glass substrate 17. In addition, in the structure shown in FIG. 2a - FIG. 2d, the color film substrate is combined with the array substrate to form a liquid crystal panel. If the capacitor and the photoelectric conversion component are located on the outer surface of the liquid crystal panel, the photoelectric conversion component can absorb the backlight. The light that turns it into electricity.

 In the region where only the photoelectric conversion member is present on the color filter substrate, the cross-sectional view of the color filter substrate may adopt a structure as shown in Fig. 3a, which is an embodiment, and the structure shown in Fig. 3b is another embodiment. In Fig. 3a, the electrode layer 7 is located on the glass substrate 17 as an electrode of the photoelectric conversion member, the N-type silicon layer 6 is located on the electrode layer 7 as an electrode of the photoelectric conversion member, and the I-type silicon layer 5 is located in the N-type silicon. On the layer 6, the P-type silicon layer 4 is on the I-type silicon layer 5, and the electrode layer 19 is on the P-type silicon layer 4 as the other electrode as the photoelectric conversion member. In Fig. 3b, the electrode layer 7 is located on the glass substrate 17 as an electrode of the photoelectric conversion member, the P-type silicon layer 4 is located on the electrode layer 7 as one electrode of the photoelectric conversion member, and the I-type silicon layer 5 is located in the P-type silicon. On the layer 4, the N-type silicon layer 6 is on the I-type silicon layer 5, and the electrode layer 19 is located on the N-type silicon layer 6 as the other electrode of the photoelectric conversion member. The N-type silicon layer 6, the I-type silicon layer 5 and the P-type silicon layer 4 constitute a PN junction in the photoelectric conversion element. A color resist 16 and a color resist 16 may be included on the glass substrate 17 in Figs. 3a and 3b.

 There is only a region of the photoelectric conversion substrate on the color filter substrate, that is, no capacitance exists in this region. Only one layer of the electrode layer as one electrode of the photoelectric conversion member and the other electrode as the photoelectric conversion member in the photoelectric conversion member is opaque, whereby the photoelectric conversion member can replace black on the color filter substrate matrix. When the electrode layer 7 as one electrode of the photoelectric conversion member is opaque, and the electrode layer 19 as the other electrode of the photoelectric conversion member transmits light, the photoelectric conversion member can absorb light in the backlight to convert it into electric energy. . When the electrode layer 7 as one electrode of the photoelectric conversion member transmits light, and the electrode layer 19 as the other electrode of the photoelectric conversion member does not transmit light, the photoelectric conversion member can absorb light in the external light source, thereby converting it into electric energy. . As shown in FIG. 3a to FIG. 3b, the color film substrate is combined with the array substrate to form a liquid crystal panel. The capacitor and the photoelectric conversion member are located inside the liquid crystal panel, or the capacitor and the photoelectric conversion member are located on the outer surface of the liquid crystal panel.

In the region where only the capacitor exists on the color filter substrate, the electrode serving as one end of the capacitor At least one of the layer and the electrode layer that is the other end of the capacitor is opaque, and the capacitor can replace the black matrix on the color filter substrate.

 In the region where only the capacitor is present on the color filter substrate, the cross-sectional view of the color filter substrate is as shown in FIG. 4a; or, when the dielectric layer in the capacitor is transparent, the cross-sectional view of the color filter substrate is as shown in FIG. 4b. Structure. As shown in FIG. 4a and FIG. 4b, the electrode layer 1 is located on the glass substrate 17 as an electrode at one end of the capacitor, the dielectric layer 2 is located on the motor layer 1, and the electrode layer 20 is located on the dielectric layer 2 as the other end of the capacitor. Electrode. 4a and 4b may further include a color resist. 16, in Fig. 4a, a color resist 16 is overlaid on the glass substrate 17, and in Fig. 4b, a color resist 16 is overlaid on the dielectric layer 2. The dielectric layer 2 in Fig. 4a may or may not be transparent. The electrode layer 1 as one end of the capacitor and the electrode layer 20 as the other end of the capacitor are opaque, and the two electrode layers may not be permeable to light.

 The top view of the substrate provided by the embodiment of the present invention may be as shown in FIG. 5, that is, the color is formed on the display substrate, when the photoelectric conversion component is located outside the color-blocking area of the color filter substrate, and the capacitor is located outside the color-blocking area of the color filter substrate. The material of the photoelectric conversion member and the material of the capacitor in the resisting region are etched away to expose the glass substrate under the photoelectric conversion member and the capacitor, and a color resist is formed in a region where the color resist is formed on the glass substrate. The capacitor and/or photoelectric conversion member 21 and the color resistance 16 are included in FIG. The photoelectric conversion member and the capacitor on the color filter substrate after etching can replace the black matrix, and in the display panel fabricated using the display substrate, the photoelectric conversion member on the display substrate can also absorb light scattered on both sides of the pixel.

 As shown in FIG. 6, the anode of the photoelectric conversion member on the color filter substrate is connected to the anode of the external power source 24 through the power source circuit 23, and the cathode of the photoelectric conversion member on the color filter substrate is connected to the cathode of the external power source 24 through the power source circuit 23. Forming a structure in which the photoelectric conversion member on the color filter substrate is connected in parallel with the external power source, thereby supplying power to the device including the color filter substrate together with the external power source. Also included in Fig. 6 are photoelectric conversion elements and/or capacitors 21 and color resistors 16.

 The display substrate may be an array substrate, and the photoelectric conversion component is located outside the pixel electrode layer on the array substrate, and the capacitor is located outside the pixel electrode layer on the array substrate.

Therefore, when the area covered by the capacitor exceeds half of the area outside the pixel electrode layer on the array substrate, and the area covered by the photoelectric conversion member also exceeds half of the area outside the pixel electrode layer on the array substrate, photoelectric conversion in a partial area on the array substrate The components and capacitors are stacked, and only a portion of the array substrate has a photoelectric conversion member, and only a portion of the region has a capacitance. Preferably, all of the photoelectric conversion members may be formed on the outer surface of the pixel electrode layer on the array substrate, and a capacitor is formed on all of the outer regions of the pixel electrode layer on the array substrate. Since the photoelectric conversion elements on the array substrate are located under the gate lines and the data lines, and the gate lines and the data lines are generally opaque, the photoelectric conversion elements on the array substrate can only absorb light in the backlight.

 Therefore, in the region where the capacitor and the photoelectric conversion member are stacked on the array substrate, the capacitance is located above the photoelectric conversion member, so that the cross-sectional view of the array substrate is similar to that shown in FIGS. 2a and 2b, and the dielectric layer in the capacitor is transparent. In the case of light, similar to the structure shown in Fig. 2c or Fig. 2d, the color resists 16 in Figs. 2a, 2b, 2c and 2d are replaced with protective layers. The material of the protective layer may be a resin. The same points will not be described here. However, at this time, the electrode layer 7 as one electrode of the photoelectric conversion member in the photoelectric conversion member transmits light, so that the light of the backlight is irradiated onto the PN junction in the photoelectric conversion member, and the electrode layer 1 as one end of the capacitor in the capacitor It may or may not be transparent; the common electrode layer 3 may be transparent or opaque.

 In the region where only the photoelectric conversion member is present on the array substrate, the cross-sectional view of the array substrate may adopt the structure shown in FIG. 3a or FIG. 3b, and only the color resistor 16 in FIGS. 3a and 3b needs to be replaced with a protective layer. The material of the layer is a resin, and the same portions will not be described herein. At this time, however, the electrode layer 7 as one electrode of the photoelectric conversion member which is in close contact with the glass substrate 17 transmits light, so that the photoelectric conversion member can absorb light in the backlight; and the electrode layer 19 as the other electrode of the photoelectric conversion member It can be light or opaque.

 In the region where only the capacitor exists on the array substrate, the array substrate can adopt the structure shown in FIG. 4a. When the dielectric layer in the capacitor transmits light, the array substrate can have the structure shown in FIG. 4b, and FIG. 4a and FIG. 4b. The color resist 16 in the middle is replaced by a protective layer, and the material of the protective layer is a resin, and the same portions will not be described herein. However, at this time, the electrode layer 1 as one end of the capacitor may be transparent or opaque; and the electrode layer 20 as the other end of the capacitor may be transparent or opaque.

 7 is a top plan view of a data line, a gate line, a thin film transistor (TFT), and a pixel electrode formed on the array substrate provided by the embodiment of the present invention. The array substrate of FIG. 7 includes a data line 13, a gate line 9, and a pixel electrode 15. After the array substrate is cut along the AA cross-sectional line in FIG. 7, the cross-sectional view of the array substrate may be any of FIGS. 8a-8h. One.

In FIGS. 8a and 8c, the photoelectric conversion member includes an electrode layer 7 as one electrode of the photoelectric conversion member on the glass substrate 17, an N-type silicon layer 6 on the electrode layer 7 as one electrode of the photoelectric conversion member, An I-type silicon layer 5 on the N-type silicon layer 6, a P-type silicon layer 4 on the I-type silicon layer 5, and a common electrode layer 3 on the P-type silicon layer 4; the capacitor includes the common electrode layer 3, and is located in the common The dielectric layer 2 on the electrode layer 3 is an electrode layer 1 on the dielectric layer 2 as one end of the capacitor. In FIGS. 8b and 8d, the photoelectric conversion member includes an electrode layer 7 as one electrode of the photoelectric conversion member on the glass substrate 17, a P-type silicon layer 4 on the electrode layer 7 as one electrode of the photoelectric conversion member, An I-type silicon layer 5 on the P-type silicon layer 4, an N-type silicon layer 6 on the I-type silicon layer 5, and a common electrode layer 3 on the N-type silicon layer 6; the capacitor includes the common electrode layer 3, and is located in the common The dielectric layer 2 on the electrode layer 3 is an electrode layer 1 on the dielectric layer 2 as one end of the capacitor. The N-type silicon layer 6, the I-type silicon layer 5, and the P-type silicon layer 4 constitute a PN junction in the photoelectric conversion element.

 8a and 8b differ in that, in FIG. 8a, the N-type silicon layer 6 is located under the I-type silicon layer 5, and the P-type silicon layer 4 is located above the I-type silicon layer 5; and in FIG. 8b, the P-type silicon layer is 4 is located below the I-type silicon layer 5, and the N-type silicon layer 6 is located above the I-type silicon layer 5. 8c and 8d differ in that, in Fig. 8c, the N-type silicon layer 6 is located under the I-type silicon layer 5, and the P-type silicon layer 4 is located above the I-type silicon layer 5; and in Figure 8d, the P-type silicon layer is 4 is located below the I-type silicon layer 5, and the N-type silicon layer 6 is located above the I-type silicon layer 5.

 8a, 8b, 8c, 8d further includes a protective layer 8, in which the protective layer 8 is overlaid on the glass substrate 17 and on the electrode layer 1 as one end of the capacitor; In Fig. 8d, a protective layer 8 is overlaid on the dielectric layer 2 and on the electrode layer 1 as one end of the capacitor. The dielectric layer 2 in Figures 8a and 8b may be light transmissive or opaque. The dielectric layer 2 in Figures 8c and 8d is transparent.

 In Fig. 8e, the photoelectric conversion member includes: an electrode layer 7 as one electrode of the photoelectric conversion member on the glass substrate 17, and an N-type silicon layer 6 on the electrode layer 7 as one electrode of the photoelectric conversion member, located at N An I-type silicon layer 5 on the silicon layer 6, a P-type silicon layer 4 on the I-type silicon layer 5, and an electrode layer 19 on the P-type silicon layer 4 as the other electrode of the photoelectric conversion member.

 In Fig. 8f, the photoelectric conversion member includes: an electrode layer 7 as one electrode of the photoelectric conversion member on the glass substrate 17, and a P-type silicon layer 4 on the electrode layer 7 as one electrode of the photoelectric conversion member, located at P The I-type silicon layer 5 on the silicon layer 4, the N-type silicon layer 6 on the I-type silicon layer 5, and the electrode layer 19 on the N-type silicon layer 6 as the other electrode of the photoelectric conversion member. The N-type silicon layer 6, the I-type silicon layer 5 and the P-type silicon layer 4 constitute a PN junction in the photoelectric conversion element.

 Also included in Fig. 8e and Fig. 8f is a protective layer 8, which is overlaid on the glass substrate 17 and on the electrode layer 19 as the other electrode of the photoelectric conversion member.

In FIGS. 8g and 8h, the capacitor includes an electrode layer 20 on one end of the capacitor on the glass substrate 17, a dielectric layer 2 on the electrode layer 20 at one end of the capacitor, and a dielectric layer 2 on the dielectric layer 2. Electrode layer 1 at the other end of the capacitor. In Figure 8g, the dielectric layer 2 in the capacitor can be transparent. It is also possible to be opaque, and in Figure 8h, the dielectric layer 2 in the capacitor is transparent. Also included in Fig. 8g and Fig. 8h is a protective layer 8 overlying the glass substrate 17 and the electrode layer 1 as the other end of the capacitor.

 8a to 8h further include: a gate electrode 9, a gate insulating layer 10, an a-Si layer 11, an N-type amorphous silicon layer 12, a source/drain electrode layer 13, a passivation layer 14, and a pixel electrode 15.

 The top view of the display substrate and the structure shown in FIG. 5 are provided when the photoelectric conversion device is located in the entire area of the pixel electrode layer on the array substrate, and the capacitor is located in the entire area of the pixel electrode layer on the array substrate. Similarly, only the position of the color resist 16 in FIG. 5 no longer forms a color resist, but is filled with a resin material, thereby flattening the surface of the array substrate including the capacitor and/or the photoelectric conversion member, to facilitate the subsequent process flow.

 In an example of the practical application, the structure having the same structure as shown in FIG. 6 may be used, and the positive electrode of the photoelectric conversion component on the array substrate is connected to the positive electrode of the external power source through the power supply circuit, and the negative electrode of the photoelectric conversion component on the array substrate passes. The power circuit is connected to the negative pole of the external power source to form a structure in which the photoelectric conversion component on the array substrate is connected in parallel with the external power source, thereby supplying power to the device including the color film substrate together with the external power source. Only the position of the color resist 16 in Fig. 6 no longer forms a color resist, but is filled with a resin material, thereby flattening the surface of the array substrate including the capacitor and/or the photoelectric conversion member, so as to facilitate the subsequent process.

The material of the light transmissive electrode layer may be indium tin compound (ITO), indium compound (IZO), etc.; the material of the opaque electrode layer may be molybdenum (Mo), aluminum (A1), chromium (Cr) The material of the dielectric layer may be SiN ₃ or other electrical storage material; the material of the N-type silicon layer may be a-Si doped with a trivalent element ion such as boron, and the material of the above-mentioned I-type silicon layer may be The doped a-Si, the P-type silicon material may be a-Si doped with pentavalent element ions such as phosphorus.

 The embodiment of the present invention further provides a display panel including the above-mentioned as shown in FIG. 1A to FIG. 2a to FIG. 2d, FIG. 3a to FIG. 3b, FIG. 4a to FIG. 4b, FIG. 5 to FIG. 7 or FIG. 8a to FIG. A display substrate provided by an embodiment of the invention is shown.

 The embodiment of the present invention further provides a method for manufacturing a display substrate provided by an embodiment of the present invention. As shown in FIG. 9, the method includes:

 5901, forming a capacitor and a photoelectric conversion member on the display substrate;

5902. Connect one end of the capacitor to one electrode of the photoelectric conversion member, and connect the other end of the capacitor to the other electrode of the photoelectric conversion member. When the display substrate is a color filter substrate, a photoelectric conversion member is formed in a partial region of the color exclusion region of the color filter substrate, and a capacitor is formed in a part or all of the region outside the color resistance of the color filter substrate; when the display substrate is an array substrate At this time, a part or all of the area outside the pixel electrode layer on the array substrate forms a photoelectric conversion element, and a capacitance is formed in part or all of the area outside the pixel electrode layer on the array substrate.

 When a photoelectric conversion member is formed on a display substrate, a process of depositing one layer or etching one layer may be employed, or a process of depositing multiple layers, etching once, and etching one layer at a time may be employed.

 When a region where the photoelectric conversion member is formed on the display substrate has formed a capacitance, the photoelectric conversion member may be formed on the display substrate according to the following steps, including: depositing a silicon material doped with an N-type ion on the capacitor to form an N-type silicon layer; An N-type ion-doped silicon material is etched away from the N-type silicon layer at a position corresponding to a window in the capacitor, and an undoped silicon material is deposited on the etched N-type silicon layer to form an I-type silicon layer. Etching an undoped silicon material in a position corresponding to a window in the capacitor in the I-type silicon layer, and depositing a silicon material doped with a P-type ion on the etched I-type silicon layer, Forming a P-type silicon layer; etching a silicon material doped with a P-type ion at a position corresponding to the window in the P-type silicon layer, and depositing a first electrode material on the P-type silicon layer after the etching, An electrode layer is formed as one electrode of the photoelectric conversion member. The above "window" is an area of a layer structure having no corresponding capacitance, and is used to form other structures such as a pixel unit or the like.

 Alternatively, forming a photoelectric conversion member on the display substrate according to the following steps, comprising: depositing a silicon material doped with a P-type ion on the capacitor to form a P-type silicon layer; and a position in the P-type silicon layer corresponding to the window in the capacitor a silicon material doped with a P-type ion is etched away, and an undoped silicon material is deposited on the etched P-type silicon layer to form an I-type silicon layer; and the I-type silicon layer is in the window Corresponding positions of the undoped silicon material are etched away, and a silicon material doped with N-type ions is deposited on the etched I-type silicon layer to form an N-type silicon layer; the N-type silicon layer is The N-type ion-doped silicon material at a position corresponding to the window is etched away, and a first electrode material is deposited on the etched N-type silicon layer to form an electrode layer as one electrode of the photoelectric conversion member.

 In the above two methods of forming a photoelectric conversion member, the first method first forms an N-type silicon layer, and then forms a P-type silicon layer; the second method first forms a P-type silicon layer, and then forms an N-type silicon layer. Both of these methods use a process of depositing one layer and etching one layer.

Since the photoelectric conversion member is located on the capacitor, the display substrate can only be a color film substrate. At this time, the position of the window in the capacitor is reserved for the color resistance, and the electrode layer formed by the first electrode material transmits light. In this case, the photoelectric conversion member located in the display panel absorbs light in the backlight.

 When a capacitor is not formed in a region where the photoelectric conversion member is formed on the display substrate, the photoelectric conversion member may be formed on the display substrate according to the following steps, including: depositing a second electrode material on a region where the photoelectric conversion member is formed on the display substrate, and forming the photoelectric material Converting an electrode layer of one electrode of the member, and etching a window in the electrode layer as one electrode of the photoelectric conversion member until the second electrode material in the window is etched away; as a photoelectric conversion member after etching Depositing a silicon material doped with ytterbium ions on the electrode layer of one electrode to form a Ν-type silicon layer; etching a window in the Ν-type silicon layer until the silicon-doped silicon material in the window is Etching away, and depositing an undoped silicon material on the Ν-type silicon layer after etching to form an I-type silicon layer; an undoped silicon material in a position corresponding to the window in the I-type silicon layer Etching off, and depositing a silicon material doped with erbium-type ions on the etched I-type silicon layer to form a bismuth-type silicon layer; doping the position of the bismuth-type silicon layer corresponding to the window Ρ silicon ion etched away, and depositing a third electrode material on Ρ type silicon layer after etching the electrode layer is formed as the other electrode of the photoelectric conversion element.

 Alternatively, forming the photoelectric conversion member on the display substrate according to the following steps includes: depositing a second electrode material on a region where the photoelectric conversion member is formed on the display substrate, forming an electrode layer as one electrode of the photoelectric conversion member, and serving as a photoelectric conversion member a window is etched in the electrode layer of one electrode until the second electrode material in the window is etched away; a silicon material doped with ytterbium ions is deposited on the electrode layer of one electrode of the photoelectric conversion member after etching Forming a germanium-type silicon layer; etching a window in the germanium-type silicon layer until the germanium-doped silicon material in the window is etched away, and depositing on the germanium-type silicon layer after etching a doped silicon material, forming an I-type silicon layer; etching an undoped silicon material in a position corresponding to the window in the I-type silicon layer, and depositing an impurity on the I-type silicon layer after etching a silicon material of a cerium-type ion is formed to form a bismuth-type silicon layer; a silicon material doped with a cerium-type ion at a position corresponding to the window in the bismuth-type silicon layer is etched away, and the germanium-type silicon after etching is formed Deposit on the layer The third electrode material forms an electrode layer as the other electrode of the photoelectric conversion member.

 In the above two methods of forming a photoelectric conversion member, the first method first forms a germanium type silicon layer, and then forms a germanium type silicon layer; the second method first forms a germanium type silicon layer, and then forms a germanium type silicon layer. Both of these methods use a process of depositing one layer and etching one layer.

When the display substrate is a color film substrate, the position of the window in the photoelectric conversion member is reserved for color resistance; if it is not necessary to form a capacitance on the photoelectric conversion member, the electrode layer and the third electrode formed by the second electrode material One of the electrode layers formed by the material is opaque, that is, if the electrode layer formed by the second electrode material is transparent Light, the electrode layer formed by the third electrode material is opaque, in which case the photoelectric conversion member located in the display panel absorbs light in the external light source, and if the electrode layer formed by the second electrode material is opaque, The electrode layer formed by the third electrode material transmits light, in which case the photoelectric conversion member located in the display panel absorbs light in the backlight; if a capacitance needs to be formed on the photoelectric conversion member, the second electrode material is formed The electrode layer is transparent, in which case the photoelectric conversion member located in the display panel absorbs light from the external light source. When the display substrate is an array substrate, the position of the window in the photoelectric conversion member is reserved for the protective layer, and is used for forming a pixel electrode on the protective layer by a subsequent process, and the electrode layer formed by the second electrode material is transparent, third The electrode layer formed of the electrode material may or may not transmit light, in which case the photoelectric conversion member located in the display panel absorbs light in the backlight.

 When a region where the photoelectric conversion member is formed on the display substrate has formed a capacitance, the photoelectric conversion member may be formed on the display substrate according to the following steps, including: depositing a silicon material doped with an N-type ion on the capacitor to form an N-type silicon layer; Depositing an undoped silicon material on the N-type silicon layer to form an I-type silicon layer; depositing a silicon material doped with a P-type ion on the I-type silicon layer to form a P-type silicon layer; depositing a P-type silicon layer on the P-type silicon layer a four-electrode material, an electrode layer forming one electrode as a photoelectric conversion member; a window etched in an electrode layer as an electrode of the photoelectric conversion member, and a silicon material doped with an N-type ion at a position corresponding to the window The undoped silicon material, the silicon material doped with the P-type ions, and the fourth electrode material are etched away.

 Alternatively, forming a photoelectric conversion member on the display substrate according to the following steps, comprising: depositing a silicon material doped with a P-type ion on the capacitor to form a P-type silicon layer; depositing an undoped silicon material on the P-type silicon layer to form a type I silicon layer; depositing a silicon material doped with an N-type ion on the I-type silicon layer to form an N-type silicon layer; depositing a fourth electrode material on the N-type silicon layer to form an electrode as a photoelectric conversion member An electrode layer; a window etched in an electrode layer as one electrode of the photoelectric conversion member, a silicon material doped with an N-type ion, an undoped silicon material, and a P-type ion to be doped at a position corresponding to the window The silicon material and the fourth electrode material are etched away.

 In the above two methods of forming a photoelectric conversion member, the first method first forms an N-type silicon layer, and then forms a P-type silicon layer; the second method first forms a P-type silicon layer, and then forms an N-type silicon layer. Both of these methods use a process of depositing multiple layers, etching once, and etching multiple layers at once.

Since the photoelectric conversion member is located above the capacitor, the display substrate can only be a color film substrate, and the position of the window in the capacitor is reserved for color resistance, and the electrode layer formed by the fourth electrode material is transparent, in which case The photoelectric conversion member located in the display panel absorbs light in the backlight. When a capacitor is not formed in a region where the photoelectric conversion member is formed on the display substrate, the photoelectric conversion member may be formed on the display substrate according to the following steps, including: depositing a fifth electrode material on a region where the photoelectric conversion member is formed on the display substrate, and forming An electrode layer of one electrode of the photoelectric conversion member; a silicon material doped with N ions is deposited on the electrode layer as an electrode of the photoelectric conversion member to form an N-type silicon layer; and an undoped silicon material is deposited on the N-type silicon layer Forming a type I silicon layer; depositing a silicon material doped with a p-type ion on the type I silicon layer to form a p-type silicon layer; depositing a sixth electrode material on the p-type silicon layer to form another electrode as a photoelectric conversion member Electrode layer; a window is etched in the electrode layer as the other electrode of the photoelectric conversion member, and the sixth electrode material at the position corresponding to the window, the silicon material doped with the P-type ion, the undoped silicon The material, the silicon material doped with the N-type ions, and the fifth electrode material are etched away.

 Alternatively, forming the photoelectric conversion member on the display substrate according to the following steps, comprising: depositing a fifth electrode material on a region where the photoelectric conversion member is formed on the display substrate, forming an electrode layer as one electrode of the photoelectric conversion member; and acting as a photoelectric conversion member A silicon material doped with P ions is deposited on the electrode layer of one electrode to form a P-type silicon layer; an undoped silicon material is deposited on the P-type silicon layer to form an I-type silicon layer; and deposition is deposited on the I-type silicon layer. a silicon material of an N-type ion, forming an N-type silicon layer; depositing a sixth electrode material on the N-type silicon layer to form an electrode layer as another electrode of the photoelectric conversion member; and an electrode layer as another electrode of the photoelectric conversion member The window is etched, and the sixth electrode material corresponding to the position of the window, the silicon material doped with P-type ions, the undoped silicon material, the silicon material doped with the N-type ions, and the fifth electrode material are engraved Etched.

 In the above two methods of forming a photoelectric conversion member, the first method first forms an N-type silicon layer, and then forms a P-type silicon layer; the second method first forms a P-type silicon layer, and then forms an N-type silicon layer. Both of these methods are etched once after the deposition process is completed.

When the display substrate is a color filter substrate, the position of the window in the photoelectric conversion member is reserved for color resistance; when it is not necessary to form a capacitance on the photoelectric conversion member, the electrode layer and the sixth electrode material formed by the fifth electrode material One of the formed electrode layers is opaque, that is, if the electrode layer formed by the fifth electrode material transmits light, the electrode layer formed by the sixth electrode material is opaque, in this case, the photoelectric layer located in the display panel The conversion member absorbs light in the external light source; if the electrode layer formed by the fifth electrode material is opaque, the electrode layer formed by the sixth electrode material transmits light, in which case the photoelectric conversion member located in the display panel absorbs the backlight Light in the source; when it is required to form a capacitance on the photoelectric conversion member, the electrode layer formed by the second electrode material transmits light, in which case the photoelectric conversion member located in the display panel absorbs the outside The light in the boundary light source. When the display substrate is an array substrate, the position of the window in the photoelectric conversion member is reserved for the protective layer, and is used for forming a pixel electrode on the protective layer by a subsequent process, and the electrode layer formed by the fifth electrode material is transparent, sixth The electrode layer formed of the electrode material may or may not transmit light, in which case the photoelectric conversion member located in the display panel absorbs light in the backlight.

 When a capacitor is formed on the display substrate, a process of depositing one layer and etching one layer may be used, or a process of depositing multiple layers, etching once, and etching one layer at a time may be employed.

 When the photoelectric conversion member has been formed in the region where the capacitance is formed on the display substrate, the capacitor may be formed on the display substrate according to the following steps, including: depositing a storage material on the photoelectric conversion member to form a dielectric layer, if the dielectric layer is transparent Light, a seventh electrode material is deposited on the dielectric layer to form an electrode layer as one end of the capacitor; and a seventh electrode material in a position corresponding to a window in the photoelectric conversion member in the electrode layer at one end of the capacitor is etched If the dielectric layer is opaque, the storage material in the dielectric layer at a position corresponding to the window in the photoelectric conversion member is etched away, and then, on the dielectric layer after etching An eighth electrode material is deposited to form an electrode layer as one end of the capacitor; and an eighth electrode material in a position corresponding to a window in the photoelectric conversion member in the electrode layer at one end of the capacitor is etched away.

 In this case, when the dielectric layer in the capacitor transmits light, the electrode layer may be deposited directly on the dielectric layer, or the window may be etched in a position corresponding to the window in the photoelectric conversion member in the dielectric layer; When the dielectric layer in the capacitor is opaque, it is necessary to etch the window at a position corresponding to the window in the photoelectric conversion member in the dielectric layer.

 When the display substrate is a color filter substrate, the position of the window in the photoelectric conversion member is reserved for color resistance; when the common electrode layer in the photoelectric conversion member is opaque, the electrode layer formed by the seventh electrode material and the eighth The electrode layer formed by the electrode material may be transparent or opaque, in which case the photoelectric conversion member located in the display panel absorbs light in the external light source; when the common electrode layer in the photoelectric conversion member transmits light, At least one of the electrode layer formed by the seventh electrode material and the electrode layer formed by the eighth electrode material is opaque, in which case the photoelectric conversion member located in the display panel absorbs light in the external light source; when the display substrate is In the case of the array substrate, the position of the window in the photoelectric conversion member is reserved for the protective layer for forming a pixel electrode on the protective layer by a subsequent process; the electrode layer formed by the seventh electrode material and the electrode layer formed by the eighth electrode material It may or may not transmit light, in which case the photoelectric conversion member located in the display panel absorbs light in the backlight.

When the photoelectric conversion member is not formed in the region where the capacitance is formed on the display substrate, the following steps may be used. Forming a capacitance on the display substrate, comprising: depositing a ninth electrode material in a region where the capacitance is formed on the display substrate, forming an electrode layer as one end of the capacitor; etching a window on the electrode layer as one end of the capacitor, up to the window The ninth electrode material is etched away; a storage material is deposited on the electrode layer as one end of the capacitor after etching to form a dielectric layer; and if the dielectric layer is transparent, a deposition layer is deposited on the dielectric layer a ten-electrode material, and etching the tenth electrode material at a position corresponding to the window in the electrode layer at the other end of the capacitor; if the dielectric layer is opaque, storing the position corresponding to the window in the dielectric layer The electrical material is etched away; an eleventh electrode material is deposited on the dielectric layer after etching, and the eleventh electrode material at a position corresponding to the window in the electrode layer at the other end of the capacitor is etched away.

 When the dielectric layer in the capacitor transmits light, the electrode layer may be directly deposited on the dielectric layer, or the storage material at a position corresponding to the window in the electrode layer formed by the ninth electrode material in the dielectric layer may be etched away. And depositing a tenth electrode material on the dielectric layer after etching; when the dielectric layer in the capacitor is opaque, the window in the electrode layer corresponding to the ninth electrode material must be corresponding to the window in the dielectric layer The storage material of the position is etched away, and then the eleventh electrode material is deposited on the dielectric layer after the etching.

 When the display substrate is a color film substrate, the position of the window is reserved for color resistance; at least one of the electrode layer formed by the ninth electrode material and the electrode layer formed by the tenth electrode material is opaque; when the display substrate is When the array substrate is used, the position of the window is reserved for the protective layer, and the pixel electrode is formed on the protective layer by a subsequent process; the electrode layer formed by the ninth electrode material and the electrode layer formed by the tenth electrode material can transmit light, and opaque.

 The above two methods are a process of depositing one layer and etching one layer.

 When the photoelectric conversion member has been formed in the region where the capacitance is formed on the display substrate, the capacitor may be formed on the display substrate according to the following steps, including: depositing a storage material on the photoelectric conversion member to form a dielectric layer; in the dielectric layer A twelfth electrode material is deposited thereon to form an electrode layer as one end of the capacitor; a window is etched in the electrode layer as one end of the capacitor until the twelfth electrode material and the storage material corresponding to the position of the window are etched away.

 The dielectric layer can be either transparent or opaque. However, when the dielectric layer is transparent, it is not necessary to etch the window in the dielectric layer. In this case, it is equivalent to a process of depositing a layer and etching a layer.

When the display substrate is a color film substrate, the position of the window in the photoelectric conversion member is reserved for color resistance; when the common electrode layer in the photoelectric conversion member is opaque, the electrode layer formed by the twelfth electrode material can be transparent Light, or opaque, in this case, the photoelectric conversion member located in the display panel absorbs the outside Light in the boundary light source; when the common electrode layer in the photoelectric conversion member transmits light, the electrode layer formed by the twelfth electrode material is opaque, in which case the photoelectric conversion member located in the display panel absorbs the external light source When the display substrate is an array substrate, the position of the window in the photoelectric conversion member is reserved for the protective layer for forming a pixel electrode on the protective layer by a subsequent process; the electrode layer formed by the twelfth electrode material may be The light transmission may also be opaque, in which case the photoelectric conversion member located in the display panel absorbs light in the backlight.

 When the photoelectric conversion member is not formed in the region where the capacitance is formed on the display substrate, the capacitor may be formed on the display substrate according to the following steps, including: depositing a thirteenth electrode material in a region where the capacitance is formed on the display substrate, forming a capacitance as a capacitor An electrode layer at one end; depositing a storage material on the electrode layer as one end of the capacitor to form a dielectric layer; depositing a fourteenth electrode material on the dielectric layer to form an electrode layer as the other end of the capacitor; The window is etched in the electrode layer at the other end until the fourteenth electrode material, the storage material, and the thirteenth electrode material corresponding to the position of the window are etched away.

 When the dielectric layer in the capacitor transmits light, the electrode layer can be directly deposited on the dielectric layer without etching the storage material in the dielectric layer corresponding to the window. In this case, it is equivalent to A process of depositing a layer and etching a layer.

 When the display substrate is a color film substrate, the position of the window is reserved for color resistance; at least one of the electrode layer formed by the thirteenth electrode material and the electrode layer formed of the fourteenth electrode material is opaque; When the substrate is an array substrate, the position of the window is reserved for the protective layer, and the pixel electrode is formed on the protective layer by a subsequent process; the electrode layer formed by the thirteenth electrode material and the electrode layer formed by the fourteenth electrode material may be Light transmission, can be opaque.

 In the actual manufacturing process, the display substrate can be divided into a region where a photoelectric conversion member needs to be formed, a region where a capacitance needs to be formed, a region where a photoelectric conversion member and a capacitor are required to be formed, and then, a photoelectric conversion member is formed in each of the three regions, Stacking of capacitors, photoelectric converters and capacitors. Alternatively, it is also possible to first form a photoelectric conversion member in a region on the display substrate where a photoelectric conversion member is to be formed, and then form a capacitance in the above-described manner in a region where capacitance is required. Alternatively, first, a capacitor is formed on a region of the display substrate where capacitance is required, and then a photoelectric conversion member is formed in the region where the photoelectric conversion member is to be formed in accordance with the above method.

When depositing materials for forming a light-transmitting electrode layer, such as ruthenium, iridium, etc., it may be deposited by a magnetron sputtering method, and when etching the light-transmitting electrode layer, it may be engraved by a wet etching process. Eclipse; when depositing materials for forming an opaque electrode layer, such as Mo, Al, Cr, etc. It can be deposited by magnetron sputtering. When etching the opaque electrode layer, it can be etched by wet etching. When depositing a storage material for forming a dielectric layer, such as SiN ₃ , it can be used. Plasma enhanced chemical vapor deposition (PECVD) deposition method, when etching the dielectric layer, etching can be performed by a dry etching process; deposition of a PN junction for forming a photoelectric conversion member When the silicon material is used, it can be deposited by PECVD. When etching the layers in the PN junction, it can be etched by a dry etching process. When depositing the storage material for forming the dielectric layer, it can also be used for spinning. The coating method forms an organic material and is etched by a process such as exposure or dry etching.

 After the capacitor and the photoelectric conversion member are formed on the color filter substrate, a color resistance can be formed in the window in the capacitor and the photoelectric conversion member. After the capacitor and the photoelectric conversion member are formed on the array substrate, a resin may be coated on the substrate to form a flat surface, and then a thin film transistor array is formed on the flat surface.

 The serial numbers of the embodiments of the present invention are merely for the description, and do not represent the advantages and disadvantages of the embodiments. The spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of the inventions

Claims

claims

1. A display substrate, comprising: a photoelectric conversion element located on the display substrate; a photoelectric conversion element located on the display substrate; and a capacitor located on the display substrate,

Wherein, one end of the capacitor is connected to one electrode of the photoelectric conversion element, and the other end of the capacitor is connected to the other electrode of the photoelectric conversion element. The photoelectric conversion element photoelectric conversion element The capacitor is used to convert the energy of light absorbed by the photoelectric conversion element into electrical energy, and the capacitor is used to store the electrical energy converted by the photoelectric conversion element.

2. The display substrate according to claim 1, wherein the display substrate is a color filter substrate, the photoelectric conversion element is located in an area outside the color resistor on the color filter substrate; the capacitor is located on the color filter substrate Area outside the color barrier.

3. The display substrate according to claim 2, wherein the photoelectric conversion element is located on the capacitor, and a common electrode is provided under the PN junction in the photoelectric conversion element and on the dielectric layer in the capacitor. layer, the common electrode layer is an electrode of the photoelectric conversion element, and is one end of the capacitor; the electrode layer in the photoelectric conversion element, which is the other electrode of the photoelectric conversion element, is light-transmitting, and the capacitor At least one layer among the electrode layer serving as the other end of the capacitor and the common electrode layer is opaque.

4. The display substrate of claim 2, wherein the capacitor is located on the photoelectric conversion element, and a common electrode is provided under the dielectric layer in the capacitor and on the PN junction in the photoelectric conversion element. layer, the common electrode layer is an electrode of the photoelectric conversion element, and is one end of the capacitor; the electrode layer in the photoelectric conversion element, which is the other electrode of the photoelectric conversion element, is light-transmitting, and the capacitor At least one layer among the electrode layer serving as the other end of the capacitor and the common electrode layer is opaque.

5. The display substrate according to claim 2, wherein in the photoelectric conversion element, there is only one electrode layer serving as one electrode of the photoelectric conversion element and an electrode layer serving as the other electrode of the photoelectric conversion element. opaque.

6. The display substrate of claim 2, wherein at least one of the electrode layer serving as one end of the capacitor and the electrode layer serving as the other end of the capacitor is opaque to light.

7. The display substrate according to claim 1, wherein the display substrate is an array substrate, the photoelectric conversion element is located in an area outside the pixel electrode layer on the array substrate; the capacitor is located in the array substrate. The area outside the pixel electrode layer on the column substrate.

8. The display substrate of claim 7, wherein the capacitor is located on the photoelectric conversion element, and a common electrode is provided under the dielectric layer in the capacitor and on the PN junction in the photoelectric conversion element. layer, the common electrode layer is one electrode of the photoelectric conversion element and one end of the capacitor; the electrode layer in the photoelectric conversion element that is the other electrode of the photoelectric conversion element is light-transmitting.

9. The display substrate of claim 7, wherein an electrode layer serving as an electrode of the photoelectric conversion element is light-transmitting, and the light-transmitting electrode layer is provided on the array substrate.

10. The display substrate according to any one of claims 1 to 9, further comprising a power circuit and an external power supply. The photoelectric conversion element on the display substrate is connected to the external power supply through the power circuit. The photoelectric conversion element can provide External power supply for charging.

11. A display panel, including the display substrate according to any one of claims 1 to 10.

12. A method of manufacturing the display substrate according to any one of claims 1 to 9, comprising: forming the photoelectric conversion element and the capacitor on the display substrate;

One end of the capacitor is connected to one electrode of the photoelectric conversion element, and the other end of the capacitor is connected to the other electrode of the photoelectric conversion element.

13. The method of claim 12, wherein the display substrate is a color filter substrate, a photoelectric conversion element is formed on the color filter outer area of the color filter substrate, and a color resistor outer area of the color filter substrate is formed on the color filter substrate. Form a capacitor; or

The display substrate is an array substrate, a photoelectric conversion element is formed on the array substrate in an area outside the pixel electrode layer, and a photoelectric conversion element is formed on the array substrate in an area outside the pixel electrode layer.

14. The method of claim 13, wherein the photoelectric conversion member is formed according to the following steps:

The area where the photoelectric conversion element is formed on the display substrate overlaps with the area where the capacitor is formed; then an N-type silicon layer, an I-type silicon layer and a P-type silicon layer are sequentially formed on the capacitor, and on the P-type silicon layer Deposit a first electrode material to form an electrode layer serving as an electrode of the photoelectric conversion element; or, sequentially form a P-type silicon layer, an I-type silicon layer and an N-type silicon layer on the capacitor, and place the N-type silicon layer on the capacitor. Deposit a first electrode material on the top to form an electrode layer serving as an electrode of the photoelectric conversion element; or

If no capacitance is formed in the area where the photoelectric conversion element is formed on the display substrate, the second electrode material is deposited on the display substrate in the area where the photoelectric conversion element is to be formed, to form an electrode layer serving as an electrode of the photoelectric conversion element, and in the A window is etched into the electrode layer of one electrode of the converter until The second electrode material in the window is etched away;

After etching, an N-type silicon layer, an I-type silicon layer and a P-type silicon layer are sequentially formed on the electrode layer serving as an electrode of the photoelectric conversion element, and a third electrode material is deposited on the P-type silicon layer to form a photoelectric conversion element. The electrode layer of the other electrode of the conversion element; or, a P-type silicon layer, an I-type silicon layer and an N-type silicon layer are formed in sequence on the electrode layer of one electrode of the photoelectric conversion element after etching, and on the N A third electrode material is deposited on the silicon layer to form an electrode layer serving as another electrode of the photoelectric conversion element; wherein, when the display substrate is a color filter substrate, the position of the window is used to form a color resistor; when the display substrate is a color filter substrate, the position of the window is used to form a color resistor; When the display substrate is an array substrate, the position of the window is used to form a pixel electrode.

15. The method of claim 13, wherein the photoelectric conversion element is formed according to the following steps: the area where the photoelectric conversion element is formed on the display substrate overlaps the area where the capacitor is formed; and an N-type silicon layer is sequentially formed on the capacitor. , I-type silicon layer and P-type silicon layer; deposit a fourth electrode material on the N-type silicon layer to form an electrode layer serving as an electrode of the photoelectric conversion element;

A window is etched into the electrode layer as an electrode of the photoelectric conversion element, and the silicon material doped with N-type ions, the undoped silicon material, and the silicon material doped with P-type ions are used at the position corresponding to the window. and the fourth electrode material is etched away;

or,

If no capacitor is formed in the area where the photoelectric conversion element is formed on the display substrate, a fifth electrode material is deposited on the display substrate in the area where the photoelectric conversion element is required to form an electrode layer serving as an electrode of the photoelectric conversion element;

A P-type silicon layer, an I-type silicon layer and an N-type silicon layer are sequentially formed on the electrode layer serving as one electrode of the photoelectric conversion element; a sixth electrode material is deposited on the N-type silicon layer to form another electrode serving as the photoelectric conversion element. The electrode layer of an electrode;

A window is etched into the electrode layer as the other electrode of the photoelectric conversion element, and the sixth electrode material at the position corresponding to the window, silicon material doped with P-type ions, undoped silicon material, The silicon material of N-type ions and the fifth electrode material are etched away;

Wherein, when the display substrate is a color filter substrate, the position of the window is used to form a color resistor; when the display substrate is an array substrate, the position of the window is used to form a pixel electrode.

16. The method of claim 13, wherein the capacitor is formed according to the following steps: the area where the capacitor is formed on the display substrate overlaps the area where the photoelectric conversion element is formed; depositing a storage material on the photoelectric conversion element , to form a dielectric layer that is light-transmissive, Then deposit a seventh electrode material on the dielectric layer to form an electrode layer serving as one end of the capacitor; deposit the seventh electrode material at a position corresponding to the window in the photoelectric conversion element in the electrode layer serving as one end of the capacitor. Etch away; or if the dielectric layer is opaque, then the power storage material at the position corresponding to the window in the photoelectric conversion element in the dielectric layer is etched away, and then, after etching depositing an eighth electrode material on the dielectric layer to form an electrode layer serving as one end of the capacitor; etching away the eighth electrode material at a position corresponding to the window in the photoelectric conversion element in the electrode layer serving as one end of the capacitor;

or,

No photoelectric conversion element is formed in the area where the capacitor is formed on the display substrate;

Then deposit the ninth electrode material in the area where the capacitor is formed on the display substrate to form an electrode layer serving as one end of the capacitor; etching a window on the electrode layer serving as one end of the capacitor until the ninth electrode material in the window is Etch away; deposit a storage material on the electrode layer serving as one end of the capacitor after etching to form a dielectric layer; if the dielectric layer is light-transmissive, deposit a tenth electrode material on the dielectric layer, and place the The tenth electrode material at the position corresponding to the window in the electrode layer serving as the other end of the capacitor is etched away; or, if the dielectric layer is opaque, then the tenth electrode material at the position corresponding to the window in the dielectric layer is etched away. The storage material is etched away; an eleventh electrode material is deposited on the etched dielectric layer, and the eleventh electrode material at the position corresponding to the window in the electrode layer serving as the other end of the capacitor is etched. Erode away;

Wherein, when the display substrate is a color filter substrate, the position of the window is used to form a color resistor; when the display substrate is an array substrate, the position of the window is used to form a pixel electrode.

17. The method of claim 13, wherein the capacitor is formed according to the following steps: forming a photoelectric conversion element in a region where the capacitor is formed on the display substrate;

Then deposit a storage material on the photoelectric conversion element to form a dielectric layer; deposit a twelfth electrode material on the dielectric layer to form an electrode layer serving as one end of the capacitor; and inscribe in the electrode layer serving as one end of the capacitor. Etch out the window until the twelfth electrode material and power storage material at the corresponding position of the window are etched away; or,

No photoelectric conversion element is formed in the area where the capacitor is formed on the display substrate;

Then deposit a thirteenth electrode material in the area where the capacitor is formed on the display substrate to form an electrode layer serving as one end of the capacitor; deposit a storage material on the electrode layer serving as one end of the capacitor to form a dielectric layer; A fourteenth electrode material is deposited on the electrical layer to form an electrode layer serving as the other end of the capacitor; a window is etched in the electrode layer serving as the other end of the capacitor until the fourteenth electrode material is formed at the corresponding position of the window. The electrode material, storage material and thirteenth electrode material are etched away;

Wherein, when the display substrate is a color filter substrate, the position of the window is used to form a color resistor; when the display substrate is an array substrate, the position of the window is used to form a pixel electrode.