CN102254968A - Novel solar thin film cell structure with capacitor structure - Google Patents
Novel solar thin film cell structure with capacitor structure Download PDFInfo
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- CN102254968A CN102254968A CN2011101980018A CN201110198001A CN102254968A CN 102254968 A CN102254968 A CN 102254968A CN 2011101980018 A CN2011101980018 A CN 2011101980018A CN 201110198001 A CN201110198001 A CN 201110198001A CN 102254968 A CN102254968 A CN 102254968A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention relates to the technical field of solar cells, in particular to a novel solar thin film cell structure with a capacitor structure. The novel solar thin film cell comprises a transparent electrode, a P layer, an I layer, an N layer and an electrode which are laminated in turn; the electrode is connected with an insulating layer and a back electrode in turn; and the transparent electrode is connected with the back electrode and applies a voltage. By the novel solar cell with the capacitor structure, a depletion layer of a PN junction is widened further due to an external electric field, so that an electron-hole pair in a photon-generated carrier is rapidly separated and shifts to the electrodes on two sides; therefore, the photoelectric conversion efficiency of the solar cell is improved; meanwhile, the sensitivity of other photoelectric elements can be improved, so that the novel solar thin film cell is more widely applied.
Description
Technical field
The present invention relates to technical field of solar batteries, especially a kind of new solar film battery structure that adopts capacitance structure.
Background technology
Along with people are more and more higher to the degree of concern of environmental problem and using energy source, solar cell also more and more is subjected to people's attention as being the transfer medium of efficient energy with solar energy converting.Solar cell is directly to be transform light energy the device of electric energy by photoelectric effect, and it is a kind of novel clean energy resource, and market prospects are wide.Traditional solar cell
,Monocrystalline silicon, polycrystal silicon cell sheet for example commonly used at present, the P-I-N solar film battery, existing P-I-N solar film battery is to be stacked gradually by transparency electrode 1, P layer 2, I layer 3, N layer 4 and electrode 5 to form, it is low that this structure is captured the photo-generated carrier ability, thereby cause photoelectric conversion efficiency low.
Summary of the invention
In order to overcome the low deficiency of existing solar cell photoelectric conversion efficiency, the invention provides a kind of new solar film battery structure that adopts capacitance structure.
The technical solution adopted for the present invention to solve the technical problems is: a kind of new solar film battery structure that adopts capacitance structure, comprise the transparency electrode, P layer, I layer, N layer and the electrode that stack gradually, described electrode also connects insulating barrier and backplate successively, described transparency electrode is connected with backplate, and applies voltage.
According to another embodiment of the invention, the stacked pass that further comprises described P layer, I layer and N layer is P layer, I layer, the N layer stacks gradually or N layer, I layer, P layer stack gradually.
According to another embodiment of the invention, comprise that further described front electrode is connected with backplate.
According to another embodiment of the invention, comprise that further described insulating barrier is PP, PET, polyimides or silicon dioxide.
The invention has the beneficial effects as follows, this new capacitance structure solar cell is further widened the depletion layer of PN junction by increasing extra electric field, electron-hole pair is separated fast shift to two lateral electrodes, thereby improve the photoelectric conversion efficiency of solar cell, simultaneously, it can also improve the sensitivity of Other Devices, thereby is more widely used.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a structural representation of the present invention;
Fig. 2 is an alternative embodiment of the invention structural representation.
Among the figure 1, transparency electrode, 2, the P layer, 3, the I layer, 4, the N layer, 5, electrode, 6, insulating barrier, 7, backplate.
Embodiment
As Fig. 1 is structural representation of the present invention, and a kind of new solar film battery structure that adopts capacitance structure comprises the transparency electrode 1, P layer 2, I layer 3, N layer 4 and the electrode 5 that stack gradually, and described electrode 5 also connects insulating barrier 6 and backplate 7 successively.
Described transparency electrode 1 is connected with backplate 7, and applies voltage, forms extra electric field.By increasing extra electric field, the separating ranges that light induced electron-hole is right expands whole solar silicon wafers to, and this extra electric field is at least greater than the field intensity size of internal electric field simultaneously.
Described transparency electrode 1 is connected with electrode 5.
Described insulating barrier 6 is thin-film capacitors such as PP, PET or polyimides thin-film material or silicon dioxide commonly used.Insulating barrier 6 plays the effect of isolated electrode 5 and backplate 7, and the selection of its material should be satisfied its electric field strength that may bear.
The photovoltaic phenomenon need electric field with light induced electron-hole to separating, and it is too narrow by the built-in electromotive force apart of PN junction scope, the present invention expands separating ranges to whole solar silicon wafers by increase extra electric field between transparency electrode 1 and backplate 7, and this extra electric field is greater than the field intensity size of internal electric field at least simultaneously.When extra electric field intensity enough strong, to produce Stark effect simultaneously, the Stark effect of semiconductor silicon causes energy level splitting on the one hand, on the other hand, according to the QCSE(Stark effect), can significantly reduce light induced electron-hole to compound probability, simultaneously when non-loaded, can reduce luminous energy and absorb, thereby reduce the solar cell heating.
As Fig. 2 is an alternative embodiment of the invention structural representation, a kind of new solar film battery structure that adopts capacitance structure, comprise the transparency electrode 1, N layer 4, I layer 3, P layer 2 and the electrode 5 that stack gradually, described electrode 5 also connects insulating barrier 6 and backplate 7 successively, described transparency electrode 1 is connected with backplate 7, and applies voltage.
Described transparency electrode 1 is connected with electrode 5.Described insulating barrier 6 is thin-film capacitors such as PP, PET or polyimides thin-film material or silicon dioxide commonly used.Its photoelectricity transformation principle and embodiment illustrated in fig. 1 same.
This structure can make photo-generated carrier shift to the battery two-stage fast, thereby improves the photoelectric conversion efficiency of solar cell, and simultaneously, it can also improve the sensitivity of Other Devices, thereby is more widely used.
Claims (4)
1. new solar film battery structure that adopts capacitance structure, comprise the transparency electrode (1), P layer (2), I layer (3), N layer (4) and the electrode (5) that stack gradually, it is characterized in that, described electrode (5) also connects insulating barrier (6) and backplate (7) successively, described transparency electrode (1) is connected with backplate (7), and applies voltage.
2. the new solar film battery structure of employing capacitance structure according to claim 1, it is characterized in that the stacked pass of described P layer (2), I layer (3) and N layer (4) is P layer (2), I layer (3), N layer (4) stacks gradually or N layer (4), I layer (3), P layer (2) stack gradually.
3. the new solar film battery structure of employing capacitance structure according to claim 1 is characterized in that, described transparency electrode (1) is connected with electrode (5).
4. the new solar film battery structure of employing capacitance structure according to claim 1 is characterized in that described insulating barrier (6) is PP, PET, polyimides or silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101980018A CN102254968A (en) | 2011-07-15 | 2011-07-15 | Novel solar thin film cell structure with capacitor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101980018A CN102254968A (en) | 2011-07-15 | 2011-07-15 | Novel solar thin film cell structure with capacitor structure |
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| Publication Number | Publication Date |
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| CN102254968A true CN102254968A (en) | 2011-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011101980018A Pending CN102254968A (en) | 2011-07-15 | 2011-07-15 | Novel solar thin film cell structure with capacitor structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103135282A (en) * | 2013-02-07 | 2013-06-05 | 北京京东方光电科技有限公司 | Display substrate, display panel and manufacture method of display substrate |
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2011
- 2011-07-15 CN CN2011101980018A patent/CN102254968A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103135282A (en) * | 2013-02-07 | 2013-06-05 | 北京京东方光电科技有限公司 | Display substrate, display panel and manufacture method of display substrate |
| WO2014121563A1 (en) * | 2013-02-07 | 2014-08-14 | 北京京东方光电科技有限公司 | Display substrate, display panel and method for fabricating display substrate |
| CN103135282B (en) * | 2013-02-07 | 2016-03-16 | 北京京东方光电科技有限公司 | A kind of method of display base plate, display panel and manufacture display base plate |
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Application publication date: 20111123 |