CN203054399U - Display substrate and display panel - Google Patents
Display substrate and display panel Download PDFInfo
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- CN203054399U CN203054399U CN 201320071875 CN201320071875U CN203054399U CN 203054399 U CN203054399 U CN 203054399U CN 201320071875 CN201320071875 CN 201320071875 CN 201320071875 U CN201320071875 U CN 201320071875U CN 203054399 U CN203054399 U CN 203054399U
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Abstract
The utility model discloses an embodiment which provides a display substrate and a display panel. The display substrate and the display panel solve the problem that the existing electronic equipment in the prior art cannot substantially improve cruising power, power of the existing electronic equipment cannot be supplemented at any time, and the equipment does not have a function for storing surplus electric energy after a photovoltaic conversion piece is charged. The display substrate comprises the photovoltaic conversion piece located on the display substrate and a capacitor located on the display substrate, one end of the capacitor is connected with an electrode of the photovoltaic conversion piece, the other end of the capacitor is connected with the other electrode of the photovoltaic conversion piece, the photovoltaic conversion piece is used for converting energy of light absorbed by the photovoltaic conversion piece into electric energy, and the capacitor is used for storing the electric energy converted by the photovoltaic conversion piece, enabling the electric energy to be supplied for an external photovoltaic conversion piece of the display panel to achieve a charging function and storing the surplus electric energy of the external photovoltaic conversion piece when charging of the external photovoltaic conversion piece is completed. The display substrate and the display panel can improve cruising power of the equipment.
Description
Technical field
The utility model relates to field of liquid crystal display, relates in particular to a kind of display base plate and display panel.
Background technology
At present, high performance portable terminal is more and more, and the power consumption of high performance portable terminal also increases relatively.And a large amount of Touch Screens that adopt in the high performance portable terminal, this has also increased the power consumption of portable terminal greatly.Usually the way that adopts is to reduce the power consumption levels of display panel self now, such as, adopt new low-power consumption materials such as organic resin material, perhaps adopt more high performance thin film transistor (TFT) to reduce the power consumption of display panel, but there is the limit in the power consumption that device architecture itself causes reduction, cause equipment flying power such as mobile phone significantly to improve, can not replenish electric power at any time simultaneously, and photoelectric converting piece is full of the function that electricity is not afterwards stored unnecessary electric energy in the equipment.
In sum, when adopting low-power consumption material or high performance thin film transistor (TFT) to reduce the power consumption of display panel, can not fully satisfy the requirement of raising equipment flying power in the prior art.
The utility model content
The utility model embodiment provides a kind of display base plate and display panel, when reducing the power consumption of display panel in order to solve available technology adopting low-power consumption material or high performance thin film transistor (TFT).
Based on the problems referred to above, a kind of display base plate that the utility model embodiment provides comprises:
Be positioned at photoelectric converting piece and the electric capacity that is positioned on the described display base plate on the described display base plate, one end of described electric capacity links to each other with an electrode of described photoelectric converting piece, the other end of described electric capacity is connected with another electrode of described photoelectric converting piece, the energy conversion that described photoelectric converting piece is used for the light of described photoelectric converting piece absorption is electric energy, and described electric capacity is used for the electric energy of the described photoelectric converting piece conversion of storage.
A kind of display panel that the utility model embodiment provides comprises the display base plate that the utility model embodiment provides.
The beneficial effect of the utility model embodiment comprises:
The display base plate that the utility model embodiment provides and display panel, by forming photoelectric converting piece and electric capacity at display base plate, thereby after photoelectric converting piece is electric energy with the energy conversion of the light that absorbs, can be with power storage in electric capacity, when the display base plate that employing is provided with electric capacity and photoelectric converting piece is made display panel, photoelectric converting piece on the display base plate and electric capacity can be for this display panel power supplies and/or for being provided with the power devices of this display panel, the power consumption that has reduced display panel and be provided with the equipment of this display panel, thus needn't adopt low-power consumption material or high performance thin film transistor (TFT) to reduce the power consumption of display panel.
Description of drawings
Fig. 1 a-Fig. 1 d is display base plate that the utility model embodiment provides when being color membrane substrates, is arranged in the cut-open view of the structure of the zone color membrane substrates on the electric capacity at photoelectric converting piece on the color membrane substrates;
Fig. 2 a-Fig. 2 d is display base plate that the utility model embodiment provides when being color membrane substrates, is arranged in the cut-open view of the structure of the zone color membrane substrates on the photoelectric converting piece at electric capacity on the color membrane substrates;
Fig. 3 a and Fig. 3 b are display base plates that the utility model embodiment provides when being color membrane substrates, only have the cut-open view of the structure of color membrane substrates in the zone of photoelectric converting piece on color membrane substrates;
Fig. 4 a and Fig. 4 b are display base plates that the utility model embodiment provides when being color membrane substrates, only have the cut-open view of the structure of color membrane substrates in the zone of electric capacity on color membrane substrates;
When the display base plate that Fig. 5 provides for the utility model embodiment is color membrane substrates, the vertical view of the structure of color membrane substrates;
When the display base plate that Fig. 6 provides for the utility model embodiment is color membrane substrates, the synoptic diagram that the photoelectric converting piece on the color membrane substrates is connected with external power supply;
Fig. 7 forms for the array base palte that provides at the utility model embodiment after data line, gate line and the TFT, the vertical view of the structure of array base palte;
When the display base plate that Fig. 8 a-Fig. 8 h provides for the utility model embodiment is array base palte, comprise the cut-open view of structure of the array base palte of data line, gate line and TFT.
Embodiment
The display base plate that the utility model embodiment provides and display panel, by form electric capacity and the photoelectric converting piece that the luminous energy that absorbs can be converted into electric energy at substrate, thereby be the display panel that adopts this display base plate and/or the power devices that is provided with this display panel, reduced the display panel that adopts this display base plate and/or adopted the power consumption of the equipment of this display panel.
Below in conjunction with Figure of description, a kind of display base plate that the utility model embodiment is provided and the embodiment of display panel describe.
A kind of display base plate that the utility model embodiment provides, comprise: be positioned at photoelectric converting piece and the electric capacity that is positioned on this display base plate on this display base plate, one end of electric capacity links to each other with an electrode of photoelectric converting piece, the other end of electric capacity is connected with another electrode of photoelectric converting piece, wherein, the energy conversion that photoelectric converting piece is used for the light of described photoelectric converting piece absorption is electric energy, and electric capacity is used for the electric energy of the described photoelectric converting piece conversion of storage.
For an end that makes electric capacity links to each other with an electrode of photoelectric converting piece, the other end of electric capacity is connected with another electrode of photoelectric converting piece, can be when forming electric capacity and photoelectric converting piece, come at the two ends of electric capacity extension line, and it is next at the two poles of the earth of photoelectric converting piece extension line, edge at display base plate arranges two wiring points, the lead-in wire of an electrode of the lead-in wire of electric capacity one end and photoelectric converting piece all is connected on the wiring point, the lead-in wire of another electrode of the lead-in wire of the electric capacity other end and photoelectric converting piece all is connected on another wiring point.
This display base plate can be color membrane substrates, and photoelectric converting piece is positioned at color membrane substrates colouring resistance exterior domain, and electric capacity is positioned at color membrane substrates colouring resistance exterior domain.Wherein, the look resistance comprises red color resistance, the resistance of blue look and the resistance of green look, i.e. RGB filter layer.This look resistance is not limited to redgreenblue, can also be the resistances of red, green, blue and white four look looks.
Therefore, the zone that electric capacity and photoelectric converting piece cover all hinders half of exterior domain above the color membrane substrates colouring, then the photoelectric converting piece in the subregion on the color membrane substrates and electric capacity will be stacked, be formed with photoelectric converting piece in a part of zone in the not stacked color membrane substrates district, be formed with electric capacity in a part of zone in the not stacked color membrane substrates district of another part.Preferably, can all form photoelectric converting piece at color membrane substrates colouring resistance exterior domain, and all form electric capacity at color membrane substrates colouring resistance exterior domain.
Be arranged in zone on the electric capacity at photoelectric converting piece on the color membrane substrates, the cut-open view of color membrane substrates is to be an embodiment as shown in Figure 1a, is another embodiment shown in Fig. 1 b.When the dielectric layer in electric capacity was light-transmitting materials, the cut-open view of color membrane substrates was an embodiment shown in Fig. 1 c, was another embodiment shown in Fig. 1 d.In Fig. 1 a and Fig. 1 c, electric capacity comprises the electrode layer 1 that is positioned on the glass substrate 17, is positioned at as the dielectric layer 2 on the electrode layer 1 of electric capacity one end, is positioned at the common electrode layer 3 on the dielectric layer 2; Photoelectric converting piece comprises common electrode layer 3, be positioned at P type silicon layer 4 on the common electrode layer 3, be positioned at I type silicon layer 5 on the P type silicon layer 4, be positioned at N-type silicon layer 6 on the I type silicon layer 5, be positioned at the electrode layer 7 as an electrode of photoelectric converting piece on the N-type silicon layer 6.In Fig. 1 b and Fig. 1 d, electric capacity comprise be positioned on the glass substrate 17, be positioned at as the dielectric layer 2 on the electrode layer 1 of electric capacity one end, be positioned at the common electrode layer 3 on the dielectric layer 2; Photoelectric converting piece comprises common electrode layer 3, be positioned at N-type silicon layer 6 on the common electrode layer 3, be positioned at I type silicon layer 5 on the N-type silicon layer 6, be positioned at P type silicon layer 4 on the I type silicon layer 5, be positioned at the electrode layer 7 as an electrode of photoelectric converting piece on the P type silicon layer 4.Wherein, the PN junction in N-type silicon layer 6, I type silicon layer 5 and the P type silicon layer 4 formation photoelectric converting pieces.The difference of Fig. 1 a and Fig. 1 b is that N-type silicon layer 6 is positioned on the I type silicon layer 5 in Fig. 1 a, and P type silicon layer 4 is positioned under the I type silicon layer 5; And P type silicon layer 4 is positioned on the I type silicon layer 5 in Fig. 1 b, and N-type silicon layer 6 is positioned under the I type silicon layer 5.The difference of Fig. 1 c and Fig. 1 d is that N-type silicon layer 6 is positioned on the I type silicon layer 5 in Fig. 1 c, and P type silicon layer 4 is positioned under the I type silicon layer 5; And P type silicon layer 4 is positioned on the I type silicon layer 5 in Fig. 1 d, and N-type silicon layer 6 is positioned under the I type silicon layer 5.Also comprise look resistance 16 in Fig. 1 a, Fig. 1 b, Fig. 1 c and Fig. 1 d, look resistance 16 is arranged on the glass substrate 17 in Fig. 1 a and Fig. 1 b; Look resistance 16 is arranged on the dielectric layer 2 in Fig. 1 c and Fig. 1 d, and dielectric layer 2 is formed on the glass substrate 17, and this dielectric layer 2 is formed by light-transmitting materials.Dielectric layer 2 among Fig. 1 a and Fig. 1 b can be formed by printing opacity or non-light-transmitting materials.
In the structure shown in Fig. 1 a, Fig. 1 b, Fig. 1 c and Fig. 1 d, common electrode layer 3 is as another electrode of photoelectric converting piece, and as the other end of electric capacity.Wherein, in the photoelectric converting piece as electrode layer 7 printing opacities of an electrode of photoelectric converting piece, thereby the light that makes backlight shines on the PN junction in the photoelectric converting piece, and in the electric capacity as having at least one deck light tight in the electrode layer 1 of an end of electric capacity and the common electrode layer 3, this electrode layer 1 and common electrode layer 3 is set in distance with adjacent look resistance 16, thereby can be with the black matrix on stacked electric capacity and the alternative color membrane substrates of photoelectric converting piece.
In above-mentioned Fig. 1 a-Fig. 1 d institute diagram shelves, the involutory back of this color membrane substrates and array base palte forms liquid crystal panel, and this electric capacity and photoelectric converting piece are positioned at the outside surface of liquid crystal panel, and photoelectric converting piece can absorb the ambient light except backlight, as natural light, thereby convert surround lighting to electric energy; That is, this electric capacity and photoelectric converting piece are positioned at the outside of glass substrate 17.In addition, in Fig. 1 a-Fig. 1 d institute diagram shelves, the involutory back of this color membrane substrates and array base palte forms liquid crystal panel, and this electric capacity and photoelectric converting piece are positioned at the inboard of liquid crystal panel, and photoelectric converting piece can absorb the light in the backlight, thereby is translated into electric energy.
Be arranged in zone on the photoelectric converting piece at electric capacity on the color membrane substrates, the cut-open view of color membrane substrates is an embodiment shown in Fig. 2 a, is another embodiment shown in Fig. 2 b.When the dielectric layer printing opacity in the electric capacity, the cut-open view of color membrane substrates is an embodiment shown in Fig. 2 c, is another embodiment shown in Fig. 2 d.In Fig. 2 a and Fig. 2 c, photoelectric converting piece comprises the electrode layer 7 as an electrode of photoelectric converting piece that is positioned on the glass substrate 17, be positioned at as the N-type silicon layer 6 on the electrode layer 7 of an electrode of photoelectric converting piece, be positioned at I type silicon layer 5 on the N-type silicon layer 6, be positioned at the P type silicon layer 4 on the I type silicon layer 5 and be positioned at common electrode layer 3 on the P type silicon layer 4; Electric capacity comprises common electrode layer 3, be positioned at dielectric layer 2 on the common electrode layer 3, be positioned at the electrode layer 1 as electric capacity one end on the dielectric layer 2.In Fig. 2 b and Fig. 2 d, photoelectric converting piece comprises the electrode layer 7 as an electrode of photoelectric converting piece that is positioned on the glass substrate 17, be positioned at as the P type silicon layer 4 on the electrode layer 7 of an electrode of photoelectric converting piece, be positioned at I type silicon layer 5 on the P type silicon layer 4, be positioned at the N-type silicon layer 6 on the I type silicon layer 5 and be positioned at common electrode layer 3 on the N-type silicon layer 6; Electric capacity comprises common electrode layer 3, be positioned at dielectric layer 2 on the common electrode layer 3, be positioned at the electrode layer 1 as electric capacity one end on the dielectric layer 2.Wherein, the PN junction in N-type silicon layer 6, I type silicon layer 5 and the P type silicon layer 4 formation photoelectric converting pieces.The difference of Fig. 2 a and Fig. 2 b is that N-type silicon layer 6 is positioned under the I type silicon layer 5 in Fig. 2 a, and P type silicon layer 4 is positioned on the I type silicon layer 5; And P type silicon layer 4 is positioned under the I type silicon layer 5 in Fig. 2 b, and N-type silicon layer 6 is positioned on the I type silicon layer 5.The difference of Fig. 2 c and Fig. 2 d is that N-type silicon layer 6 is positioned under the I type silicon layer 5 in Fig. 2 c, and P type silicon layer 4 is positioned on the I type silicon layer 5; And P type silicon layer 4 is positioned under the I type silicon layer 5 in Fig. 2 d, and N-type silicon layer 6 is positioned on the I type silicon layer 5.Also comprise look resistance 16 in Fig. 2 a, Fig. 2 b, Fig. 2 c, Fig. 2 d, in Fig. 2 a and Fig. 2 b, look resistance 16 is arranged on the glass substrate 17; In Fig. 2 c and Fig. 2 d, look resistance 16 is arranged on the dielectric layer 2, and dielectric layer 2 is formed on the glass substrate 17, and this dielectric layer 2 is formed by light-transmitting materials.Dielectric layer 2 among Fig. 2 a and Fig. 2 b can be formed by printing opacity or non-light-transmitting materials.
In the structure shown in Fig. 2 a, Fig. 2 b, Fig. 2 c and Fig. 2 d, common electrode layer 3 is another electrode of photoelectric converting piece, and is the other end of electric capacity.Wherein, in the photoelectric converting piece as electrode layer 7 printing opacities of an electrode of photoelectric converting piece, thereby the light that makes external light source shines on the PN junction in the photoelectric converting piece, and in the electric capacity as having at least one deck light tight in the electrode layer 1 of an end of electric capacity and the common electrode layer 3, this electrode layer 1 and common electrode layer 3 is set in distance with adjacent look resistance 16, thereby can be with the black matrix on stacked electric capacity and the alternative color membrane substrates of photoelectric converting piece.
In above-mentioned Fig. 2 a-Fig. 2 d institute diagram shelves, the involutory back of color membrane substrates and array base palte forms liquid crystal panel, and this electric capacity and photoelectric converting piece are positioned at the inboard of liquid crystal panel, and photoelectric converting piece can absorb the ambient light except backlight, as natural light, thereby convert surround lighting to electric energy; That is, this electric capacity and photoelectric converting piece are positioned at the inboard of glass substrate 17.In addition, in Fig. 2 a-Fig. 2 d institute diagram shelves, the involutory back of this color membrane substrates and array base palte forms liquid crystal panel, and this electric capacity and photoelectric converting piece are positioned at the outside surface of liquid crystal panel, and photoelectric converting piece can absorb the light in the backlight, thereby is translated into electric energy.
It is an embodiment that the structure shown in Fig. 3 a can be adopted in the zone that only has photoelectric converting piece on color membrane substrates, the cut-open view of color membrane substrates, and adopting the structure shown in Fig. 3 b is another embodiment.In Fig. 3 a, electrode layer 7 is positioned at the electrode as photoelectric converting piece on the glass substrate 17, N-type silicon layer 6 is positioned on the electrode layer 7 as an electrode of photoelectric converting piece, I type silicon layer 5 is positioned on the N-type silicon layer 6, P type silicon layer 4 is positioned on the I type silicon layer 5, and electrode layer 19 is positioned at another electrode as photoelectric converting piece on the P type silicon layer 4.In Fig. 3 b, electrode layer 7 is positioned at the electrode as photoelectric converting piece on the glass substrate 17, P type silicon layer 4 is positioned on the electrode layer 7 as an electrode of photoelectric converting piece, I type silicon layer 5 is positioned on the P type silicon layer 4, N-type silicon layer 6 is positioned on the I type silicon layer 5, and electrode layer 19 is positioned at another electrode as photoelectric converting piece on the N-type silicon layer 6.Wherein, the PN junction in N-type silicon layer 6, I type silicon layer 5 and the P type silicon layer 4 formation photoelectric converting pieces.Also comprise look resistance 16 among Fig. 3 a and Fig. 3 b, look resistance 16 is covered on the glass substrate 17.
The zone that on color membrane substrates, only has photoelectric converting piece, namely exist at this no electric capacity in zone, as only having one deck light tight in the electrode layer of an electrode of this photoelectric converting piece and the electrode layer as another electrode of this photoelectric converting piece, this photoelectric converting piece can substitute the black matrix on the color membrane substrates in the photoelectric converting piece.Light tight when the electrode layer 7 as an electrode of photoelectric converting piece, and during as electrode layer 19 printing opacities of another electrode of photoelectric converting piece, photoelectric converting piece can absorb the light in the backlight, thereby is translated into electric energy.When electrode layer 7 printing opacities as an electrode of photoelectric converting piece, and when light tight as the electrode layer 19 of another electrode of photoelectric converting piece, photoelectric converting piece can absorb the light in the external light source, thereby is translated into electric energy.In Fig. 3 a-Fig. 3 b, the involutory back of color membrane substrates and array base palte forms liquid crystal panel, and this electric capacity and photoelectric converting piece are positioned at the inboard of liquid crystal panel, and perhaps this electric capacity and photoelectric converting piece are positioned at the outside surface of liquid crystal panel.
Only exist on color membrane substrates in the zone of electric capacity, as one deck is light tight at least in the electrode layer of an end of this electric capacity and the electrode layer as the other end of this electric capacity, this electric capacity can substitute the black matrix on the color membrane substrates in this electric capacity.
Only exist on color membrane substrates in the zone of electric capacity, the cut-open view of color membrane substrates is the structure shown in Fig. 4 a; When the dielectric layer printing opacity in the electric capacity, the cut-open view of color membrane substrates is the structure shown in Fig. 4 b.Shown in Fig. 4 a and Fig. 4 b, electrode layer 1 is positioned at the electrode as an end of electric capacity on the glass substrate 17, and dielectric layer 2 is positioned on the motor layer 1, and electrode layer 20 is positioned at the electrode as the other end of electric capacity on the dielectric layer 2.Fig. 4 a and Fig. 4 b also comprise look resistance 16, and in Fig. 4 a, look resistance 16 is covered on the glass substrate 17, and in Fig. 4 b, look resistance 16 is covered on the dielectric layer 2.Dielectric layer 2 among Fig. 4 a can printing opacity, also can be light tight.Wherein, as the electrode layer 1 of an end of electric capacity and light tight as any one electrode layer in the electrode layer 20 of the other end of electric capacity, also can these two electrode layers all light tight.
When photoelectric converting piece is positioned at color membrane substrates colouring resistance exterior domain, and when electric capacity is positioned at color membrane substrates colouring resistance exterior domain, the vertical view of the substrate that the utility model embodiment provides can be as shown in Figure 5, exactly the material of the photoelectric converting piece in the zone of formation look resistance on the display base plate and the material of electric capacity are etched away, expose the glass substrate under photoelectric converting piece and the electric capacity, and in the zone of glass substrate formation look resistance, form the look resistance.Comprise electric capacity and/or photoelectric converting piece 21, look resistance 16 among Fig. 5.Photoelectric converting piece and electric capacity can the replace black matrixes on the color membrane substrates after the etching, and in the display panel that uses this display base plate to make, the photoelectric converting piece on the display base plate can also absorb the light of pixel two sidescatterings.
Structure as shown in Figure 6, the positive pole of the photoelectric converting piece on the color membrane substrates is connected to the positive pole of external power supply 24 by power circuit 23, the negative pole of the photoelectric converting piece on the color membrane substrates is connected to the negative pole of external power supply 24 by power circuit 23, form the photoelectric converting piece structure in parallel with external power supply on the color membrane substrates, thereby be the power devices that comprises this color membrane substrates with external power supply.Also comprise photoelectric converting piece and/or electric capacity 21, look resistance 16 among Fig. 6.
Display base plate is array base palte, and photoelectric converting piece is positioned at pixel electrode layer exterior domain on the array base palte, and electric capacity is positioned at pixel electrode layer exterior domain on the array base palte.
Therefore, surpass half of pixel electrode layer exterior domain on the array base palte when the zone that electric capacity covers, and the zone that photoelectric converting piece covers also surpasses pixel electrode layer exterior domain on the array base palte half, photoelectric converting piece in the subregion on the array base palte and electric capacity will be stacked so, only there is photoelectric converting piece in a part of zone in the array base palte, only has electric capacity in a part of zone.Preferably, can on array base palte, all form photoelectric converting piece by the pixel electrode layer exterior domain, and the pixel electrode layer exterior domain all forms electric capacity on array base palte.
Because the photoelectric converting piece on the array base palte is positioned under gate line and the data line, and gate line and data line are normally lighttight, therefore, the photoelectric converting piece on the array base palte can only absorb the light in the backlight.
Therefore; the stacked zone of electric capacity and photoelectric converting piece on array base palte; electric capacity will be positioned on the photoelectric converting piece; therefore; structure shown in the cut-open view of array base palte and Fig. 2 a, Fig. 2 b is similar, and during the dielectric layer printing opacity in electric capacity, similar with the structure shown in Fig. 2 c or Fig. 2 d; the look resistance 16 that is about among Fig. 2 a, Fig. 2 b, Fig. 2 c and Fig. 2 d replaces with protective seam, and the material of this protective seam is resin.Something in common does not repeat them here.But this moment, in the photoelectric converting piece as electrode layer 7 printing opacities of an electrode of photoelectric converting piece, thereby the light of backlight is shone on the PN junction in the photoelectric converting piece, and can printing opacity as the electrode layer 1 of an end of electric capacity in the electric capacity, also can be light tight; Common electrode layer 3 can printing opacity, also can be light tight.
On array base palte, only exist in the zone of photoelectric converting piece; the cut-open view of array base palte can adopt the structure shown in Fig. 3 a or Fig. 3 b; and only the resistance of the look among Fig. 3 a and Fig. 3 b 16 need be replaced with protective seam, and the material of this protective seam is resin, something in common does not repeat them here.But be close to electrode layer 7 printing opacities as an electrode of photoelectric converting piece of glass substrate 17 this moment, thereby make photoelectric converting piece can absorb light in the backlight; And can printing opacity as the electrode layer 19 of another electrode of photoelectric converting piece, also can be light tight.
On array base palte, only exist in the zone of electric capacity; array base palte can adopt the structure shown in Fig. 4 a; during dielectric layer printing opacity in electric capacity; array base palte can be shown in Fig. 4 b structure; look among Fig. 4 a and Fig. 4 b resistance 16 is replaced with protective seam; the material of this protective seam is resin, and something in common does not repeat them here.But this moment, can printing opacity as the electrode layer 1 of an end of electric capacity, also can be light tight; Can printing opacity as the electrode layer 20 of the other end of electric capacity, also can be light tight.
Fig. 7 forms data line, gate line, thin film transistor (TFT) (TFT, Thin Film Transistor) and pixel electrode vertical view afterwards for the array base palte that provides at the utility model embodiment.Comprise data line 13, gate line 9 and pixel electrode 15 among Fig. 7, after A-A Section line place cut array base palte open in Fig. 7, the cut-open view of array base palte was among Fig. 8 a-Fig. 8 h any one.
In Fig. 8 a and Fig. 8 c, photoelectric converting piece comprises the electrode layer 7 as an electrode of photoelectric converting piece that is positioned on the glass substrate 17, be positioned at as the N-type silicon layer 6 on the electrode layer 7 of an electrode of photoelectric converting piece, be positioned at I type silicon layer 5 on the N-type silicon layer 6, be positioned at the P type silicon layer 4 on the I type silicon layer 5 and be positioned at common electrode layer 3 on the P type silicon layer 4; Electric capacity comprises common electrode layer 3, be positioned at dielectric layer 2 on the common electrode layer 3, be positioned at the electrode layer 1 as electric capacity one end on the dielectric layer 2.In Fig. 8 b and Fig. 8 d, photoelectric converting piece comprises the electrode layer 7 as an electrode of photoelectric converting piece that is positioned on the glass substrate 17, be positioned at as the P type silicon layer 4 on the electrode layer 7 of an electrode of photoelectric converting piece, be positioned at I type silicon layer 5 on the P type silicon layer 4, be positioned at the N-type silicon layer 6 on the I type silicon layer 5 and be positioned at common electrode layer 3 on the N-type silicon layer 6; Electric capacity comprises common electrode layer 3, be positioned at dielectric layer 2 on the common electrode layer 3, be positioned at the electrode layer 1 as electric capacity one end on the dielectric layer 2.Wherein, the PN junction in N-type silicon layer 6, I type silicon layer 5 and the P type silicon layer 4 formation photoelectric converting pieces.The difference of Fig. 8 a and Fig. 8 b is that N-type silicon layer 6 is positioned under the I type silicon layer 5 in Fig. 8 a, and P type silicon layer 4 is positioned on the I type silicon layer 5; And P type silicon layer 4 is positioned under the I type silicon layer 5 in Fig. 8 b, and N-type silicon layer 6 is positioned on the I type silicon layer 5.The difference of Fig. 8 c and Fig. 8 d is that N-type silicon layer 6 is positioned under the I type silicon layer 5 in Fig. 8 c, and P type silicon layer 4 is positioned on the I type silicon layer 5; And P type silicon layer 4 is positioned under the I type silicon layer 5 in Fig. 8 d, and N-type silicon layer 6 is positioned on the I type silicon layer 5.Also comprise protective seam 8 in Fig. 8 a, Fig. 8 b, Fig. 8 c, Fig. 8 d, in Fig. 8 a and Fig. 8 b, protective seam 8 is covered on the glass substrate 17 and on the electrode layer 1 as electric capacity one end; In Fig. 8 c and Fig. 8 d, protective seam 8 is covered on the dielectric layer 2 and on the electrode layer 1 as electric capacity one end.Dielectric layer 2 among Fig. 8 a and Fig. 8 b can printing opacity, also can be light tight.Dielectric layer 2 printing opacities among Fig. 8 c and Fig. 8 d.
In Fig. 8 e, photoelectric converting piece comprises: be positioned at the electrode layer 7 as an electrode of photoelectric converting piece on the glass substrate 17, be positioned at as the N-type silicon layer 6 on the electrode layer 7 of an electrode of photoelectric converting piece, be positioned at I type silicon layer 5 on the N-type silicon layer 6, be positioned at P type silicon layer 4 on the I type silicon layer 5, be positioned at the electrode layer 19 as another electrode of photoelectric converting piece on the P type silicon layer 4.In Fig. 8 f, photoelectric converting piece comprises: be positioned at the electrode layer 7 as an electrode of photoelectric converting piece on the glass substrate 17, be positioned at as the P type silicon layer 4 on the electrode layer 7 of an electrode of photoelectric converting piece, be positioned at I type silicon layer 5 on the P type silicon layer 4, be positioned at N-type silicon layer 6 on the I type silicon layer 5, be positioned at the electrode layer 19 as another electrode of photoelectric converting piece on the N-type silicon layer 6.Wherein, the PN junction in N-type silicon layer 6, I type silicon layer 5 and the P type silicon layer 4 formation photoelectric converting pieces.Also comprise protective seam 8 among Fig. 8 e and Fig. 8 f, protective seam 8 be covered on the glass substrate 17 and the electrode layer 19 as another electrode of photoelectric converting piece on.
In Fig. 8 g and Fig. 8 h, electric capacity comprises: be positioned at the electrode layer 20 as an end of electric capacity on the glass substrate 17, be positioned at as the dielectric layer 2 on the electrode layer 20 of an end of electric capacity, be positioned at the electrode layer 1 as the other end of electric capacity on the dielectric layer 2.In Fig. 8 g, the dielectric layer 2 in the electric capacity can printing opacity, also can be light tight, and in Fig. 8 h, dielectric layer 2 printing opacities in the electric capacity.Also comprise protective seam 8 among Fig. 8 g and Fig. 8 h, protective seam 8 be covered on the glass substrate 17 and the electrode layer 1 as the other end of electric capacity on.
Also comprise among Fig. 8 a-Fig. 8 h: grid 9, gate insulation layer 10, a-Si layer 11, N-type amorphous silicon layer 12, source-drain electrode layer 13, passivation layer 14 and pixel electrode 15.
When photoelectric converting piece is arranged in pixel electrode layer exterior domain Zone Full on the array base palte, and when electric capacity is arranged on the array base palte pixel electrode layer exterior domain Zone Full, the vertical view of the display base plate that the utility model embodiment provides is identical with structure shown in Figure 5, just the position of the look resistance 16 among Fig. 5 no longer forms the look resistance, and want the potting resin material, thereby make the surfacing of the array base palte that comprises electric capacity and/or photoelectric converting piece, so that carry out the subsequent technique flow process.
In actual applications, also can adopt the identical structure of structure shown in Figure 6, the positive pole of the photoelectric converting piece on the array base palte is connected to the positive pole of external power supply by power circuit, the negative pole of the photoelectric converting piece on the array base palte is connected to the negative pole of external power supply by power circuit, form the photoelectric converting piece structure in parallel with external power supply on the array base palte, thereby be the power devices that comprises this color membrane substrates with external power supply.Just the position of the look resistance 16 among Fig. 6 no longer forms the look resistance, and wants the potting resin material, thereby makes the surfacing of the array base palte that comprises electric capacity and/or photoelectric converting piece, so that carry out the subsequent technique flow process.
The material of the electrode layer of above-mentioned printing opacity can be phosphide tin compound (ITO), indium zinc compound (IZO) etc.; The material of above-mentioned lighttight electrode layer can be molybdenum (Mo), aluminium (Al), chromium (Cr) etc.; The material of above-mentioned dielectric layer can be SiN
3Or other accumulate material; The material of above-mentioned N-type silicon layer can be for mixing the a-Si of triad ions such as boron, and the material of above-mentioned I type silicon layer can be unadulterated a-Si, and above-mentioned P type silicon materials can be for mixing the a-Si of pentad ions such as phosphorus.
The utility model embodiment also provides a kind of display panel, comprises the above-mentioned display base plate that utility model embodiment provides shown in Fig. 1 a-Fig. 1 d, Fig. 2 a-Fig. 2 d, Fig. 3 a-Fig. 3 b, Fig. 4 a-Fig. 4 b, Fig. 5-Fig. 7, Fig. 8 a-Fig. 8 h.
Above-mentioned the utility model embodiment sequence number does not represent the quality of embodiment just to description.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (11)
1. display base plate, it is characterized in that, comprise: be positioned at photoelectric converting piece and the electric capacity that is positioned on the described display base plate on the described display base plate, one end of described electric capacity links to each other with an electrode of described photoelectric converting piece, the other end of described electric capacity is connected with another electrode of described photoelectric converting piece, the energy conversion that described photoelectric converting piece is used for the light of described photoelectric converting piece absorption is electric energy, and described electric capacity is used for the electric energy of the described photoelectric converting piece conversion of storage.
2. display base plate as claimed in claim 1 is characterized in that, described display base plate is color membrane substrates, and described photoelectric converting piece is positioned at described color membrane substrates colouring resistance exterior domain; Described electric capacity is positioned at described color membrane substrates colouring resistance exterior domain.
3. display base plate as claimed in claim 2, it is characterized in that, described photoelectric converting piece is positioned on the described electric capacity, dielectric layer under the PN junction in described photoelectric converting piece, in the described electric capacity is provided with the common electrode layer, described common electrode layer is an electrode of described photoelectric converting piece, and is an end of described electric capacity;
In the described photoelectric converting piece as the electrode layer printing opacity of another electrode of described photoelectric converting piece, in the described electric capacity as having at least one deck light tight in the electrode layer of the described electric capacity other end and the described common electrode layer.
4. display base plate as claimed in claim 2, it is characterized in that, described electric capacity is positioned on the described photoelectric converting piece, PN junction under the dielectric layer in described electric capacity, in the described photoelectric converting piece is provided with the common electrode layer, described common electrode layer is an electrode of described photoelectric converting piece, and is an end of described electric capacity;
In the described photoelectric converting piece as the electrode layer printing opacity of another electrode of described photoelectric converting piece, in the described electric capacity as having at least one deck light tight in the electrode layer of the described electric capacity other end and the described common electrode layer.
5. display base plate as claimed in claim 2 is characterized in that, in the described photoelectric converting piece as only having one deck light tight in the electrode layer of an electrode of described photoelectric converting piece and the electrode layer as another electrode of described photoelectric converting piece.
6. display base plate as claimed in claim 2 is characterized in that, in the described electric capacity as the electrode layer of an end of described electric capacity and light tight as the one deck at least in the electrode layer of the other end of described electric capacity.
7. display base plate as claimed in claim 1 is characterized in that, described display base plate is array base palte, and described photoelectric converting piece is positioned at pixel electrode layer exterior domain on the described array base palte; Described electric capacity is positioned at pixel electrode layer exterior domain on the described array base palte.
8. display base plate as claimed in claim 7, it is characterized in that, described electric capacity is positioned on the described photoelectric converting piece, PN junction under the dielectric layer in described electric capacity, in the described photoelectric converting piece is provided with the common electrode layer, described common electrode layer is an electrode of described photoelectric converting piece, and is an end of described electric capacity;
In the described photoelectric converting piece as the electrode layer printing opacity of another electrode of described photoelectric converting piece.
9. display base plate as claimed in claim 7 is characterized in that, as the electrode layer printing opacity of an electrode of described photoelectric converting piece, the electrode layer of this printing opacity is arranged on the described array base palte in the described photoelectric converting piece.
10. as the arbitrary described display base plate of claim 1 ~ 9, it is characterized in that also comprise power circuit and external power supply, the photoelectric converting piece on this display base plate is connected to external power supply by power circuit, this photoelectric converting piece can be given external power charging.
11. a display panel is characterized in that, comprises as the arbitrary described display base plate of claim 1 ~ 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320071875 CN203054399U (en) | 2013-02-07 | 2013-02-07 | Display substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320071875 CN203054399U (en) | 2013-02-07 | 2013-02-07 | Display substrate and display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203054399U true CN203054399U (en) | 2013-07-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320071875 Withdrawn - After Issue CN203054399U (en) | 2013-02-07 | 2013-02-07 | Display substrate and display panel |
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| Country | Link |
|---|---|
| CN (1) | CN203054399U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103135282A (en) * | 2013-02-07 | 2013-06-05 | 北京京东方光电科技有限公司 | Display substrate, display panel and manufacture method of display substrate |
-
2013
- 2013-02-07 CN CN 201320071875 patent/CN203054399U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103135282A (en) * | 2013-02-07 | 2013-06-05 | 北京京东方光电科技有限公司 | Display substrate, display panel and manufacture method of display substrate |
| WO2014121563A1 (en) * | 2013-02-07 | 2014-08-14 | 北京京东方光电科技有限公司 | Display substrate, display panel and method for fabricating display substrate |
| CN103135282B (en) * | 2013-02-07 | 2016-03-16 | 北京京东方光电科技有限公司 | A kind of method of display base plate, display panel and manufacture display base plate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150708 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150708 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150708 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing city in Western Daxing District economic and Technological Development Zone, Road No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20130710 Effective date of abandoning: 20160316 |
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| C25 | Abandonment of patent right or utility model to avoid double patenting |