CN109166895B - Array substrate and display device - Google Patents
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- CN109166895B CN109166895B CN201811013833.6A CN201811013833A CN109166895B CN 109166895 B CN109166895 B CN 109166895B CN 201811013833 A CN201811013833 A CN 201811013833A CN 109166895 B CN109166895 B CN 109166895B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3035—Edge emission
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Abstract
The application provides an array substrate and display device, wherein array substrate is bottom emission OLED array substrate, including a plurality of pixel unit, each pixel unit divides into light-emitting region and light-transmitting area, the array substrate of light-emitting region includes: the display device comprises a substrate, a driving transistor and a storage capacitor, wherein the driving transistor and the storage capacitor are arranged on the substrate, and display light rays penetrate through the storage capacitor to be emitted. This application technical scheme realizes transparent demonstration through the OLED array substrate of end emission structure, luminous region is provided with the storage capacitor that can pass the display light, owing to be end emission structure, so need not to set up structures such as black matrix on array substrate's the encapsulation apron, and then the pixel unit on the array substrate need not to carry out the accuracy with structures such as black matrix on the encapsulation apron and aim at, compare in the technique that current top emission structure realized transparent demonstration, the array substrate that this application provided can reduce to closing the precision, simplified process.
Description
Technical Field
The invention relates to the technical field of display, in particular to an array substrate and a display device.
Background
With the development of the information society, novel display technologies such as transparent display devices and the like obtain good user experience and have wide market prospects. However, the transparent display panel and the transparent display apparatus including the transparent display panel are not currently commercialized because transparency of the transparent display apparatus and luminous efficiency of the panel compete. Designs that enhance the transparency of transparent display panels come at the cost of reducing the light emitting area, thereby reducing the light emitting efficiency, and vice versa.
In the prior art, in order to improve transparency, a top emission structure is usually adopted to manufacture a transparent display panel, and since a color film, a black matrix and other structures corresponding to a pixel region of a lower cover plate are arranged on an upper cover plate of the top emission structure, alignment deviation greatly affects luminous efficiency, the requirement on the alignment precision of the upper cover plate and the lower cover plate of the top emission transparent display panel is high, and the process is complex.
Disclosure of Invention
The invention provides an array substrate and a display device, which are used for simplifying the process.
In order to solve the above problems, the present invention discloses an array substrate, wherein the array substrate is a bottom emission OLED array substrate, and includes a plurality of pixel units, each of the pixel units is divided into a light-emitting region and a light-transmitting region, and the array substrate of the light-emitting region includes:
the display device comprises a substrate, a driving transistor and a storage capacitor, wherein the driving transistor and the storage capacitor are arranged on the substrate, and display light rays penetrate through the storage capacitor to be emitted.
Optionally, the storage capacitor includes:
the first polar plate, the first dielectric layer and the second polar plate are sequentially arranged on one side of the substrate in a stacking mode, and the first polar plate is close to the substrate;
the first polar plate is connected with the grid electrode of the driving transistor, and the second polar plate is connected with the active layer of the driving transistor.
Optionally, the driving transistor includes:
the active layer, the grid insulation layer, the grid, the second dielectric layer and the source drain electrode are sequentially arranged on the substrate in a stacking mode, and the active layer is arranged close to the substrate;
the active layer comprises a channel region, a first conducting region and a second conducting region, the orthographic projection of the grid electrode on the substrate covers the orthographic projection of the channel region on the substrate, and the source and drain electrodes are connected with the first conducting region through via holes arranged on the second dielectric layer;
the first polar plate is arranged on one side, away from the substrate, of the second medium layer and is connected with the grid through a through hole formed in the second medium layer, and the second polar plate is connected with the second conduction area through a through hole formed in the first medium layer and the second medium layer.
Optionally, the array substrate of the light-emitting region further includes:
patterning a pixel defining layer arranged on one side, away from the substrate, of the second polar plate;
and the organic material layer and the first electrode layer are stacked and covered on one side, away from the substrate, of the second polar plate and the pixel defining layer, and the organic material layer is arranged close to the substrate.
Optionally, the array substrate of the light-emitting region further includes:
the first reflecting layer covers one side, away from the substrate, of the first electrode layer, and the orthographic projection of the first reflecting layer on the substrate covers the light emitting region.
Optionally, the substrate comprises:
the color-resisting layer is arranged close to the substrate, and the orthographic projection of the color-resisting layer on the substrate covers the orthographic projection of the driving transistor and the storage capacitor on the substrate.
Optionally, the array substrate of the light-transmitting region includes:
the substrate, and the buffer layer, the first dielectric layer, the second dielectric layer, the organic material layer and the first electrode layer which are sequentially stacked on the substrate, wherein the buffer layer is arranged close to the substrate.
In order to solve the above problem, the invention further discloses a display device, which includes a stacked package cover plate and the array substrate according to any embodiment.
Optionally, the package cover plate includes:
the light-emitting diode comprises a packaging substrate and a second reflecting layer arranged on one side, close to the array substrate, of the packaging substrate, wherein the orthographic projection of the second reflecting layer on the array substrate covers the light-emitting region.
Optionally, the second reflective layer is made of a conductive material and is connected to the first electrode layer in the array substrate.
Compared with the prior art, the invention has the following advantages:
the application provides an array substrate and display device, wherein array substrate is bottom emission OLED array substrate, including a plurality of pixel unit, each pixel unit divides into light-emitting region and light-transmitting area, the array substrate of light-emitting region includes: the display device comprises a substrate, a driving transistor and a storage capacitor, wherein the driving transistor and the storage capacitor are arranged on the substrate, and display light rays penetrate through the storage capacitor to be emitted. This application technical scheme realizes transparent demonstration through the OLED array substrate of end emission structure, it can make the storage capacitor that shows light and pass to send out the region, owing to be end emission structure, so need not to set up structures such as black matrix on array substrate's the encapsulation apron, and then the pixel unit on the array substrate need not to carry out the accuracy with structures such as black matrix on the encapsulation apron and aim at, compare in the technique that current top emission structure realized transparent demonstration, the array substrate that this application provided can reduce and to closing the precision, simplified process.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic cross-sectional view illustrating an array substrate according to an embodiment of the present disclosure;
fig. 2 is a schematic plan view illustrating an array substrate according to an embodiment of the present disclosure;
fig. 3 is a flowchart illustrating steps of a method for manufacturing an array substrate according to an embodiment of the present disclosure;
fig. 4 is a flowchart illustrating steps of a method for manufacturing a substrate according to an embodiment of the present disclosure;
FIG. 5 is a flow chart illustrating steps of a method for manufacturing a driving transistor and a storage capacitor according to an embodiment of the present disclosure;
fig. 6 is a schematic cross-sectional view illustrating a display device according to an embodiment of the present application;
fig. 7 is a schematic cross-sectional view illustrating a completed substrate in a method for manufacturing an array substrate according to an embodiment of the present disclosure;
fig. 8 is a schematic cross-sectional view illustrating a completed driving transistor in a method for manufacturing an array substrate according to an embodiment of the present disclosure;
fig. 9 is a schematic cross-sectional view illustrating a storage capacitor fabricated in a method for fabricating an array substrate according to an embodiment of the present disclosure;
fig. 10 is a schematic cross-sectional structure diagram illustrating that the fabrication of the organic material layer and the first electrode layer is completed in the method for manufacturing the array substrate according to an embodiment of the present disclosure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing and simplifying the description, but do not indicate or imply that the machine or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
An embodiment of the present application provides an array substrate, referring to fig. 1 and 2, the array substrate is a bottom emission OLED array substrate, and includes a plurality of pixel units, each pixel unit is divided into a light emitting region 10a and a light transmitting region 10b, and the array substrate of the light emitting region 10a includes: the substrate 11, and the driving transistor 12 and the storage capacitor 13 disposed on the substrate 11, display light is emitted through the storage capacitor 13.
Specifically, the driving transistor 12 includes a gate electrode, an active layer, a source electrode, a drain electrode, and the like, and may be a top gate structure or a bottom gate structure, and the specific structure thereof is not limited in the present application. In practical applications, the drain of the driving transistor 12 may be connected to an electrode of the organic light emitting layer for driving the organic light emitting layer to emit light.
The storage capacitor 13 may be a capacitor including two plates, for example, one plate may be connected to the gate of the driving transistor 12, the other plate may be connected to the source of the driving transistor 12, and the storage capacitor 13 is used for storing the gate voltage of the driving transistor 12. The storage capacitor 13 may also be a stacked capacitor including three plates, for example, the middle plate is connected to the gate, and the plates on the two sides are respectively connected to the source, and the specific structure of the storage capacitor 13 is not limited in this application.
When the storage capacitor 13 has two plates and a dielectric layer between the two plates, the display light passing through the storage capacitor 13 is emitted through the whole structure of the two plates and the dielectric layer, that is, the storage capacitor 13 can pass through the display light, and the specific transmittance can be determined according to the factors such as the structural design and the material of the storage capacitor 13. The plate of the storage capacitor 13 may be a transparent conductive material such as ITO to improve transmittance. Compared with the storage capacitor in the prior art formed by a data line or a gate electrode, the light emitting efficiency of the light emitting region can be improved by the storage capacitor structure capable of passing through display light in the embodiment.
In practical applications, the array substrate of the light emitting region may further include a pixel defining layer, an organic light emitting layer, and the like, which are sequentially formed on the driving transistor 12 and the storage capacitor 13 on a side away from the substrate 11. In order to realize bottom emission, the array substrate of the light-emitting region may further include a reflective layer disposed on a side of the organic light-emitting layer away from the substrate 11, and the reflective layer may be further disposed on a side of the package cover plate facing the array substrate, the side being close to the array substrate, so as to reflect the display light and emit the display light from a side of the substrate away from the driving transistor and the storage capacitor. The present embodiment does not limit the specific arrangement position of the reflective layer.
The array substrate that this embodiment provided, OLED array substrate through end emission structure realizes transparent demonstration, it can make the storage capacitor that display light passed to send out the district to send, because it is end emission structure, display light directly sends from the base plate side, need not through encapsulation apron and array substrate and encapsulation apron between clearance etc, consequently, need not to set up structures such as black matrix on array substrate's the encapsulation apron, and then pixel element on the array substrate need not to carry out accurate alignment with structures such as black matrix on the encapsulation apron, compare in the technique that adopts top emission structure to realize transparent demonstration, the array substrate that this application provided can reduce and involutes the precision, simplified process.
The active layer material of the driving transistor 12 may be various oxides, silicon materials, organic materials, and the like, and for example, the active layer material may include at least one of the following: a-IGZO, ZnON, IZTO, a-Si, p-Si, hexathiophene, polythiophene, and the like. The array substrate provided by this embodiment can be manufactured by Oxide technology, silicon technology, and organic technology.
In one implementation of the above embodiment, referring to fig. 1 and 2, the storage capacitor 13 may include: the first pole plate 131, the first dielectric layer 132 and the second pole plate 133 are sequentially stacked on one side of the substrate 11, and the first pole plate 131 is arranged close to the substrate 11; the first plate 131 is connected to the gate electrode 123 of the driving transistor 12, and the second plate 133 is connected to the active layer of the driving transistor 12.
Specifically, there are various ways to connect the first plate 131 to the gate of the driving transistor 12 and connect the second plate 133 to the active layer of the driving transistor 12, and the connection manner is not limited in this application, and is related to the structure of the driving transistor 12 in practical applications. A structure of the driving transistor 12 will be described as an example.
Referring to fig. 1 and 2, the driving transistor 12 may include: an active layer 121, a gate insulating layer 122, a gate electrode 123, a second dielectric layer 124 and a source-drain electrode 125 which are sequentially stacked on the substrate 11, wherein the active layer 121 is disposed close to the substrate 11; the active layer 121 comprises a channel region 121a, a first conduction region 121b and a second conduction region 121c, an orthographic projection of the gate electrode 123 on the substrate 11 covers an orthographic projection of the channel region 121a on the substrate 11, and the source-drain electrode 125 is connected with the first conduction region 121b through a via hole arranged on the second dielectric layer 124; the first plate 131 is disposed on a side of the second dielectric layer 124 away from the substrate 11 and connected to the gate 123 through a via hole disposed on the second dielectric layer 124, and the second plate 133 is connected to the second conducting region 121c through a via hole disposed on the first dielectric layer 132 and the second dielectric layer 124.
In the array substrate structure provided by this embodiment, the second conducting region 121c of the active layer 121, the first plate 131 and the second plate 133 may form a stacked capacitor, wherein the second conducting region 121c of the active layer 121 and the second plate 133 have the same potential.
The material of the first conductive region 121b and the second conductive region 121c may be a conductive channel region 121a material or other conductive materials.
Referring to fig. 1, the array substrate of the light emitting region 10a may further include: the pixel defining layer 16 disposed on the side of the second plate 133 facing away from the substrate 11 is patterned to define an open region and a non-open region. The orthographic projection of the driving transistor 12 on the substrate 11 is located in the non-opening region, and the orthographic projection of the storage capacitor 13 on the substrate 11 is located in the opening region.
Referring to fig. 1, the array substrate of the light emitting region 10a may further include: the organic material layer 14 and the first electrode layer 15 covering the second electrode 133 and the pixel defining layer 16 on the side facing away from the substrate 11 are stacked, and the organic material layer 14 is disposed close to the substrate 11. Wherein the second electrode plate 133 and the first electrode layer 15 respectively serve as an anode and a cathode, or a cathode and an anode, of the organic material layer 14.
In order to realize bottom emission, the array substrate of the light emitting region 10a may further include: a first reflective layer covering the first electrode layer 15 on the side facing away from the substrate 11, the light-emitting region 10a being covered by an orthographic projection of the first reflective layer on the substrate 11, or the orthographic projection of the first reflective layer on the substrate 11 coinciding with the light-emitting region 10 a.
In the above embodiments, the substrate 11 may further include: the liquid crystal display device comprises a substrate 111, and a color resistance layer 112, a flat layer 113 and a buffer layer 114 which are sequentially stacked on the substrate 111, wherein the color resistance layer 112 is arranged close to the substrate 111, and the orthographic projection of the color resistance layer 112 on the substrate 111 covers the orthographic projection of the driving transistor 12 and the storage capacitor 13 on the substrate 111.
The color-resist layer 112 may include a red color-resist layer, a green color-resist layer, and a blue color-resist layer.
In order to prevent the threshold of the driving transistor 12 from being affected by light, especially in the case that the active layer material is IGZO, a metal light shielding layer may be disposed on the substrate 111 to shield the driving transistor 12 from light, but the metal is connected to the source of the driving transistor 12, and may generate current during operation to generate a metal heating effect. In this embodiment, the color resistance layer 112 is used as a light shielding layer of the driving transistor 12, so that a metal heating effect can be generated on the surface, and the reliability of the array substrate is improved.
It should be noted that the structure of the color resist layer 112 in this embodiment is not necessary, and in practical applications, color display can also be realized by printing organic material layers 14 of different colors in different pixel units.
Referring to fig. 1, the array substrate of the light transmission region 10b may include a substrate 111, and a buffer layer 114, a first dielectric layer 132, a second dielectric layer 124, an organic material layer 14, and a first electrode layer 15 sequentially stacked on the substrate 111, wherein the buffer layer 114 is disposed adjacent to the substrate 111. The array substrate of the light-transmitting region 10b removes the pixel defining layer 16 and the planarization layer 113 to improve transparency.
The materials of the electrodes (such as the first electrode layer 15, etc.), the capacitor plates (such as the first plate 131 and the second plate 133, etc.), and the signal traces (such as the gate electrode, the source drain electrode, etc.) in the above embodiments may be common metal materials, such as Ag, Cu, Al, Mo, etc., or multilayer metals, such as MoNb/Cu/MoNb, etc., or alloy materials of the above metals, such as AlNd, MoNb, etc., or stack structures formed by metals and transparent conductive oxides (such as ITO, AZO, etc.), such as ITO/Ag/ITO, etc.
The materials of the dielectric layer (e.g., the first dielectric layer 132, the second dielectric layer 124, etc.), the insulating layer (e.g., the gate insulating layer 122, etc.), the pixel defining layer 16, and the buffer layer (e.g., the buffer layer 114, etc.) in the above embodiments include, but are not limited to, conventional dielectric materials such as SiOx, SiNx, SiON, etc., or various novel organic insulating materials, or High k materials such as AlOx, HfOx, TaOx, etc.
The material of the planarization layer 113 in the above embodiments includes, but is not limited to, a planarization material such as a silicone-based material, an acrylic-based material, or a polyimide-based material.
The array substrate in the above embodiment may be obtained by the following preparation method, and referring to fig. 3, the preparation method of the array substrate of the light emitting region may include:
step 301: a substrate is provided.
Step 302: a driving transistor and a storage capacitor are formed on a substrate, and display light passes through the storage capacitor to be emitted.
Referring to fig. 4, the step of step 301 may include:
step 401: a substrate is provided.
Step 402: a color resistance layer, a flat layer and a buffer layer are sequentially formed on the substrate, and the orthographic projection of the color resistance layer on the substrate covers the orthographic projection of the driving transistor and the storage capacitor on the substrate.
Specifically, a substrate such as glass or the like is initially cleaned, R, G, B three kinds of color resist layers are sequentially formed on the substrate, then a planarization layer (Resin) is spin-coated and patterned, and then an entire surface inorganic insulating material is PECVD (low temperature) deposited as a buffer layer. Fig. 7 shows a schematic cross-sectional structure of the completed substrate.
Referring to fig. 5, the step of forming the driving transistor and the storage capacitor on the substrate in step 302 may include:
step 501: an active layer, a grid insulation layer, a grid, a second dielectric layer and a source drain electrode are sequentially formed on the substrate; the active layer comprises a channel region, a first conducting region and a second conducting region, the orthographic projection of the grid electrode on the substrate covers the orthographic projection of the channel region on the substrate, and the source and drain electrodes are connected with the first conducting region through via holes formed in the second dielectric layer.
Specifically, depositing an active layer ACT material on a substrate and patterning, then sequentially depositing a Gate insulating layer GI and a Gate metal and patterning, depositing a second dielectric layer material through PECVD and opening holes; and then depositing and imaging source and drain electrode S/D metal serving as a metal wire, wherein the source and drain electrodes are connected with the first conduction region through via holes arranged on the second dielectric layer. A schematic cross-sectional structure of the completed driving transistor is shown in fig. 8.
Step 502: and a first polar plate, a first dielectric layer and a second polar plate are sequentially formed on one side of the second dielectric layer, which is far away from the substrate, the first polar plate is connected with the grid through a through hole arranged on the second dielectric layer, and the second polar plate is connected with the second conduction region through holes arranged on the first dielectric layer and the second dielectric layer.
Specifically, a first plate material such as ITO is deposited on one side, away from the substrate, of the second dielectric layer and is subjected to wet etching, the patterned ITO is connected with the grid electrode of the driving transistor, and a first plate of the storage capacitor is formed.
Then a first dielectric layer material is deposited and Via holes are etched, a second layer of a material such as ITO is deposited and patterned, and the layer of ITO is connected to the second conducting region of the drive transistor Via holes. Fig. 9 is a schematic cross-sectional view of a completed storage capacitor.
In practical application, the preparation method may further include: coating a pixel defining layer material on one side of the second polar plate, which is away from the substrate, and patterning the pixel defining layer material to ensure that the defined opening region is positioned right above the first polar plate; then, an organic material layer and a first electrode layer such as IZO are sequentially formed over the second plate and the pixel defining layer. The organic material layer may be formed by evaporation or the like. Fig. 10 shows a schematic cross-sectional structure of the completed organic material layer and first electrode layer. Wherein the second electrode plate and the first electrode layer respectively serve as an anode and a cathode, or a cathode and an anode, of the organic material layer.
It should be noted that, the structures of the layers in the array substrate of the light-transmitting region may refer to the preparation method of the array substrate of the light-emitting region, and are not described herein again.
In another embodiment of the present application, a display device is further provided, and referring to fig. 6, the display device may include a package cover plate 61 and an array substrate 62 according to any of the above embodiments.
The display device in this embodiment may be: any product or component with a display function, such as a display panel, electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator and the like.
According to the display device provided by the embodiment, due to the adoption of the array substrate with bottom emission, the thickness of the film layer through which light passes before being emitted is smaller, so that the light emitting efficiency of the light emitting region is higher, and the display brightness is improved; the light emitted from the top of the array substrate needs to pass through the filler between the array substrate and the package cover plate and the color-resist layer and the flat layer on the package cover plate before being emitted, and these film layers have large thickness, resulting in large loss and low light-emitting efficiency.
Wherein, the package cover plate 61 may include: the light emitting diode package comprises a package base 611 and a second reflecting layer 612 arranged on one side of the package base 611 close to the array substrate 62, wherein the orthographic projection of the second reflecting layer 612 on the array substrate 62 covers the light emitting region. The material of the second reflective layer 612 may be a conductive material, and is connected to the first electrode layer.
In the display device provided in this embodiment, the conductive second reflective layer 612 is used for reflecting light incident on the package cover 61; on the other hand, the second reflective layer 612 is in contact with the first electrode layer on the array substrate, so that IR drop of the first electrode layer can be reduced, and signal uniformity can be improved. The material of the second reflective layer 612 may be ITO/Ag/ITO, etc. The second reflective layer 612 may be formed by depositing and patterning a reflective cathode metal on the encapsulation substrate 611.
The display device provided by the embodiment adopts the storage capacitor capable of passing through the display light, the color resistance layer can be arranged right below the storage capacitor, and the second reflection layer is manufactured on the encapsulation cover plate at the corresponding position right above the storage capacitor to jointly form the light emitting area of the transparent display device. Meanwhile, other areas of the backboard are transparent areas, the pixel defining layer and the flat layer are removed to improve the transparency, and the corresponding packaging cover plate area is free of metal.
The embodiment of the application provides an array substrate and a display device, wherein the array substrate is a bottom-emitting OLED array substrate and comprises a plurality of pixel units, each pixel unit is divided into a light-emitting area and a light-transmitting area, and the array substrate of the light-emitting area comprises: the display device comprises a substrate, a driving transistor and a storage capacitor, wherein the driving transistor and the storage capacitor are arranged on the substrate, and display light rays penetrate through the storage capacitor to be emitted. This application technical scheme realizes transparent demonstration through the OLED array substrate of end emission structure, it can make the storage capacitor that shows light and pass to send out the region, owing to be end emission structure, so need not to set up structures such as black matrix on array substrate's the encapsulation apron, and then the pixel unit on the array substrate need not to carry out the accuracy with structures such as black matrix on the encapsulation apron and aim at, compare in the technique that current top emission structure realized transparent demonstration, the array substrate that this application provided can reduce and to closing the precision, simplified process.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The array substrate and the display device provided by the present invention are described in detail above, and the principle and the embodiment of the present invention are explained in detail herein by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (8)
1. An array substrate, wherein the array substrate is a bottom-emitting OLED array substrate and comprises a plurality of pixel units, each pixel unit is divided into a light-emitting area and a light-transmitting area, and the array substrate of the light-emitting area comprises:
the display device comprises a substrate, a driving transistor and a storage capacitor, wherein the driving transistor and the storage capacitor are arranged on the substrate, and display light rays are emitted through the storage capacitor;
the array substrate further comprises a substrate and a color resistance layer arranged on the substrate; the orthographic projection of the color resistance layer on the substrate covers the orthographic projection of the driving transistor and the storage capacitor on the substrate, and the color resistance layer also serves as a light shielding layer of the driving transistor;
wherein the storage capacitor comprises:
the first polar plate, the first dielectric layer and the second polar plate are sequentially arranged on one side of the substrate in a stacking mode, and the first polar plate is close to the substrate;
the first polar plate is connected with the grid electrode of the driving transistor, and the second polar plate is connected with the active layer of the driving transistor;
the driving transistor includes:
the active layer, the grid insulation layer, the grid, the second dielectric layer and the source drain electrode are sequentially arranged on the substrate in a stacking mode, and the active layer is arranged close to the substrate;
the active layer comprises a channel region, a first conducting region and a second conducting region, the orthographic projection of the grid electrode on the substrate covers the orthographic projection of the channel region on the substrate, and the source and drain electrodes are connected with the first conducting region through via holes arranged on the second dielectric layer;
the first polar plate is arranged on one side, away from the substrate, of the second medium layer and is connected with the grid through a through hole formed in the second medium layer, and the second polar plate is connected with the second conduction area through a through hole formed in the first medium layer and the second medium layer.
2. The array substrate of claim 1, wherein the array substrate of the light-emitting area further comprises:
patterning a pixel defining layer arranged on one side, away from the substrate, of the second polar plate;
and the organic material layer and the first electrode layer are stacked and covered on one side, away from the substrate, of the second polar plate and the pixel defining layer, and the organic material layer is arranged close to the substrate.
3. The array substrate of claim 2, wherein the array substrate of the light-emitting area further comprises:
the first reflecting layer covers one side, away from the substrate, of the first electrode layer, and the orthographic projection of the first reflecting layer on the substrate covers the light emitting region.
4. The array substrate of claim 2, wherein the substrate further comprises:
and a flat layer and a buffer layer sequentially stacked on the color resist layer.
5. The array substrate of claim 4, wherein the array substrate of the light-transmissive region comprises:
the substrate, and the buffer layer, the first dielectric layer, the second dielectric layer, the organic material layer and the first electrode layer which are sequentially stacked on the substrate, wherein the buffer layer is arranged close to the substrate.
6. A display device comprising a package cover and the array substrate of any one of claims 1 to 5 stacked together.
7. The display device according to claim 6, wherein the encapsulation cover plate comprises:
the light-emitting diode comprises a packaging substrate and a second reflecting layer arranged on one side, close to the array substrate, of the packaging substrate, wherein the orthographic projection of the second reflecting layer on the array substrate covers the light-emitting region.
8. The display device according to claim 7, wherein the material of the second reflective layer is a conductive material, and is connected to the first electrode layer in the array substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811013833.6A CN109166895B (en) | 2018-08-31 | 2018-08-31 | Array substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811013833.6A CN109166895B (en) | 2018-08-31 | 2018-08-31 | Array substrate and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109166895A CN109166895A (en) | 2019-01-08 |
| CN109166895B true CN109166895B (en) | 2021-01-22 |
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| CN110085648B (en) * | 2019-05-17 | 2021-03-16 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN113330577A (en) * | 2019-05-28 | 2021-08-31 | 深圳市柔宇科技股份有限公司 | OLED double-sided display panel |
| CN110225439B (en) * | 2019-06-06 | 2020-08-14 | 京东方科技集团股份有限公司 | Array substrate and sound generating device |
| CN110416263A (en) | 2019-07-22 | 2019-11-05 | 深圳市华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| CN110600517B (en) | 2019-09-16 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110854162B (en) * | 2019-10-23 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel, preparation method thereof and display device thereof |
| CN110838511A (en) * | 2019-11-25 | 2020-02-25 | 深圳市华星光电半导体显示技术有限公司 | OLED display device and forming method thereof |
| CN110854176B (en) * | 2019-11-26 | 2022-04-19 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof |
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| CN103904099A (en) * | 2012-12-26 | 2014-07-02 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| CN104752471A (en) * | 2013-12-30 | 2015-07-01 | 乐金显示有限公司 | Organic light emitting diode display device |
| CN107885004A (en) * | 2017-12-06 | 2018-04-06 | 京东方科技集团股份有限公司 | A kind of array base palte, display panel, display device and its manufacture craft |
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| CN107681063A (en) * | 2017-10-11 | 2018-02-09 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
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| CN103904099A (en) * | 2012-12-26 | 2014-07-02 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| CN104752471A (en) * | 2013-12-30 | 2015-07-01 | 乐金显示有限公司 | Organic light emitting diode display device |
| CN107885004A (en) * | 2017-12-06 | 2018-04-06 | 京东方科技集团股份有限公司 | A kind of array base palte, display panel, display device and its manufacture craft |
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