WO2014119955A1 - Appareil de dépôt par lots - Google Patents

Appareil de dépôt par lots Download PDF

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Publication number
WO2014119955A1
WO2014119955A1 PCT/KR2014/000900 KR2014000900W WO2014119955A1 WO 2014119955 A1 WO2014119955 A1 WO 2014119955A1 KR 2014000900 W KR2014000900 W KR 2014000900W WO 2014119955 A1 WO2014119955 A1 WO 2014119955A1
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WO
WIPO (PCT)
Prior art keywords
process gas
inner tube
gas
chamber
deposition layer
Prior art date
Application number
PCT/KR2014/000900
Other languages
English (en)
Korean (ko)
Inventor
연세훈
이유진
이재학
Original Assignee
주식회사 티지오테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority claimed from KR1020140011304A external-priority patent/KR101555021B1/ko
Application filed by 주식회사 티지오테크 filed Critical 주식회사 티지오테크
Publication of WO2014119955A1 publication Critical patent/WO2014119955A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the present invention relates to a batch deposition layer forming apparatus. More specifically, the present invention relates to a batch deposition layer forming apparatus capable of stably supplying a metal halide gas.
  • LEDs Light Emitting Diodes
  • LEDs are semiconductor light emitting devices that convert current into light and have been widely used as light sources for display images of electronic devices including information and communication devices.
  • LED lamps unlike conventional lighting such as incandescent lamps, fluorescent lamps, it is known that the efficiency of converting electrical energy into light energy can be saved up to 90%, and it is widely used as a device that can replace fluorescent lamps or incandescent bulbs. I am getting it.
  • the manufacturing process of such an LED device can be largely classified into an epi process, a chip process, and a package process.
  • the epitaxial process refers to a process for epitaxial growth of a compound semiconductor on a substrate
  • the chip process refers to a process of manufacturing an epi chip by forming electrodes on each part of the epitaxially grown substrate. It refers to a process of connecting leads to the manufactured epi chip and packaging so that light is emitted to the outside as much as possible.
  • the epi process is the most important process for determining the luminous efficiency of the LED device. This is because when the compound semiconductor is not epitaxially grown on the substrate, defects occur in the crystal and these defects act as nonradiative centers, thereby lowering the luminous efficiency of the LED device.
  • a liquid phase epitaxy (LPE), a vapor phase epitaxy (VPE), a molecular beam epitaxy (MBE), and a chemical vapor deposition (CVD) method are used.
  • LPE liquid phase epitaxy
  • VPE vapor phase epitaxy
  • MBE molecular beam epitaxy
  • CVD chemical vapor deposition
  • MOCVD metal-organic chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • a process gas supply for supplying the process gas necessary for causing a reaction to form an epitaxial layer on the substrate is included in the apparatus for forming the epitaxial layer, wherein the process gas supply includes the process gas. It is most important to supply stably.
  • GaCl gas is supplied through the process gas supply unit as one of the process gases, and GaCl has a property of liquefying or condensing at 600 ° C or lower. Therefore, the temperature of the process gas supply unit for supplying GaCl should be maintained at a high temperature exceeding 600 ° C.
  • the process gas supply unit since the process gas supply unit is disposed outside the chamber, the temperature of the process gas supply unit is maintained at a high temperature. There was a difficulty in maintaining. Therefore, GaCl is liquefied or condensed in the process gas supply part, so that GaCl gas is not stably supplied into the chamber.
  • the present invention has been made to solve the above-mentioned problems of the prior art, and an object thereof is to provide a process gas reaction apparatus capable of stably supplying a supply gas and a batch epitaxial layer forming apparatus including the same.
  • a batch deposition layer forming apparatus for forming a deposition layer on a plurality of substrates, the space in which the deposition layer is formed
  • a chamber providing a;
  • a heater disposed outside the chamber to apply heat to a plurality of substrates;
  • a substrate support disposed inside the chamber and in which the plurality of substrates are seated;
  • a process gas supply unit arranged to penetrate a center of the substrate support inside the chamber and supply process gas to the plurality of substrates;
  • a process gas exhaust unit configured to exhaust the process gas;
  • a process gas generating unit disposed inside the chamber and generating a first process gas by reacting a metal in the metal source with a halogen-containing gas, and supplying the first process gas to the process gas supply unit.
  • FIG. 1 is a view showing the configuration of a batch deposition layer forming apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a structure of a process gas supply unit according to an exemplary embodiment of the present invention.
  • FIG 3 is a cross-sectional view illustrating a structure of a process gas generating unit according to an embodiment of the present invention.
  • FIG. 1 is a view showing the configuration of a batch deposition layer forming apparatus according to an embodiment of the present invention.
  • the material of the substrate 10 loaded in the batch deposition layer forming apparatus is not particularly limited, and the substrate 10 may be loaded with various materials, such as glass, plastic, polymer, silicon wafer, stainless steel, and sapphire.
  • the substrate 10 may be loaded with various materials, such as glass, plastic, polymer, silicon wafer, stainless steel, and sapphire.
  • a circular sapphire substrate 10 used in the light emitting diode field will be described.
  • a batch deposition layer forming apparatus includes a chamber 110.
  • the chamber 110 may be configured to substantially seal the internal space during the process to provide a space for forming a deposition layer (epitaxial layer) on the plurality of substrates 10.
  • the chamber 110 is configured to maintain optimal process conditions, and the shape may be manufactured in a square or circular shape.
  • the material of the chamber 110 is preferably quartz, but is not necessarily limited thereto.
  • the batch deposition layer forming apparatus may include a heater 120.
  • the heater 120 may be installed outside the chamber 110 to perform a function of applying heat required in an epitaxial process to the plurality of substrates 10.
  • the heater 120 may heat the substrate 10 to a temperature of about 1,200 ° C. or more.
  • a heating method using a halogen lamp or a resistive heating element may be used to heat the substrate 10, but preferably an induction heating method may be used.
  • Induction heating refers to a method of heating a conductive object such as a metal by using electromagnetic induction.
  • the heater 120 includes a coil-type heater 120 capable of induction heating the inside of the chamber 110, and the susceptor 133 installed on the substrate support 131 includes a conductive material. Can be configured.
  • the heating of the substrate 10 using the coil heater 120 is based on the principle that the susceptor 133 including a conductive material is heated as a high frequency alternating current is applied from the coil heater 120 into the chamber 110. Can be implemented.
  • components of the batch deposition layer forming apparatus except for the susceptor 133 may be formed of non-conductors (eg, quartz). Accordingly, only the susceptor 133 is heated by the coil heater 120, thereby minimizing deposition of deposition material on the remaining components inside the chamber 110.
  • the batch deposition layer forming apparatus may include a lower support 130.
  • the lower supporter 130 may be installed inside the chamber 110 to support a plurality of substrates 10 during the epitaxial process.
  • the lower support 130 may be configured to be rotatable in the chamber 110.
  • various known rotation driving means may be employed in the lower support 130.
  • the substrate support 131 which is a component of the lower support 130, also rotates, so that the process gas is supplied in an unbiased position to the substrate 10. Can be prevented. As a result, the process gas can be more uniformly supplied on the plurality of substrates 10.
  • the lower supporter 130 may include a substrate support 131 on which the substrate 10 is mounted.
  • the substrate support 131 is preferably configured in the form of a disc for smooth rotation of the lower support 130, but is not necessarily limited thereto.
  • the substrate support 131 may be installed to be arranged in a plurality of layers.
  • the substrate support 131 of the plurality of layers may be connected and fixed to each other by the connection member 132.
  • the substrate support 131 is illustrated as having six layers in FIG. 1, the substrate support 131 is not necessarily limited thereto.
  • the number of layers of the substrate support 131 may be variously changed according to the purpose of the present invention.
  • the material of the substrate support 131 is preferably quartz, but is not necessarily limited thereto.
  • the process gas supply unit 140 supplies the process gas in a state where the process gas supply unit 140 penetrates the center of the substrate support 131 of the lower support unit 130.
  • the process gas is supplied from the center of the substrate support 131, a problem may occur in that more process gas is supplied to a position on the substrate 10 close to the center of the substrate support 131.
  • the plurality of substrates 10 mounted on the substrate support 131 may be independently rotated. In other words, while the epitaxial process is performed, each substrate 10 may be rotated in a horizontal direction with respect to the substrate support 131, but may be rotated at different rotational speeds or different rotational directions. This independent rotation of the substrate 10 may be made by the rotation of the susceptor 133 on which the substrate 10 is seated. As the substrate 10 rotates independently, the process gas can be uniformly supplied onto the plurality of substrates 10.
  • each of the substrate supports 131 may be provided with a plurality of susceptors 133.
  • the susceptor 133 may support the substrate 10 during the epitaxial process to prevent deformation of the substrate 10.
  • the number of susceptors 133 installed on each substrate support 131 may be the same as the number of substrates 10 disposed on each substrate support 131.
  • the susceptor 133 may perform a function of heating the substrate 10 together with the coil type heater 120.
  • the material of the susceptor 133 may include a conductive material, for example, amorphous carbon, diamondlike carbon, glasslike carbon, or the like, preferably graphite. (Graphite).
  • Graphite is not only excellent in strength but also excellent in conductivity and may be suitable for heating by induction heating.
  • the surface of graphite may be coated with silicon carbide (SiC). Since silicon carbide has excellent high temperature strength and hardness and high thermal conductivity, it is possible not only to prevent graphite molecules from dispersing during heating, but also to facilitate heat transfer to the substrate 10.
  • the susceptor 133 may perform a function of preventing rotation of the substrate 10 and rotating (rotating) the substrate 10 as described above, in addition to preventing deformation of the substrate 10 and heating the substrate 10.
  • various known rotation drive means may be employed in the susceptor 133.
  • the susceptor 133 preferably has the shape of a disc for smooth rotation, but is not necessarily limited thereto, and may have various shapes according to the object of the present invention.
  • the batch deposition layer forming apparatus may include a process gas supply unit 140.
  • the process gas supply unit 140 may perform a function of supplying a process gas necessary for forming an epitaxial layer into the chamber 110.
  • the process gas supply unit 140 is disposed to penetrate the center of the substrate support 131.
  • the process gas supply unit 140 is disposed to penetrate the through hole 135 formed in the center of the substrate support 131, so that the process gas supply unit 140 is supported by the substrate support 131 from the center of the substrate support 131.
  • the supply of the process gas towards the substrate 10 is characterized by its configuration.
  • the process gas supply unit 140 may be rotated while the epitaxial process is in progress.
  • various known rotation driving means may be employed in the process gas supply unit 140. Accordingly, similar to the rotation of the lower support 130, it is possible to prevent the process gas from being supplied unevenly to any position of each substrate 10. As a result, the process gas can be more uniformly supplied on the plurality of substrates 10.
  • FIG 2 is a cross-sectional view showing the structure of a process gas supply unit 140 according to an embodiment of the present invention.
  • the process gas supply unit 140 may be configured in a multi-pipe structure including a first inner tube 142 and a second inner tube 147 in the exterior 141.
  • the number of the first inner tubes 142 is illustrated as four, but is not limited thereto, and may be variously changed according to the purpose and situation of use.
  • the process gas supply unit 140 may include a plurality of gas injection holes 143 and 145.
  • the plurality of gas injection holes 143 and 145 may perform a function of injecting first and second process gases. Positions of the plurality of gas injection holes 143 and 145 may be formed to correspond to positions of the respective substrate supports 131.
  • the number of gas injection holes is not particularly limited and may be variously changed according to the object of the present invention.
  • the plurality of gas injection holes 143 and 145 are connected to the plurality of first gas injection holes 143 and the appearance 141 of the process gas supply unit 140 connected to the first inner tube 142 of the process gas supply unit 140. It can be seen as a meaning including a plurality of second gas injection holes 145.
  • the first gas injection hole 143 may inject a process gas into a hole formed at an end of the nozzle in the form of a nozzle formed on an outer wall of the first inner tube 142.
  • the first gas injection hole 143 may penetrate the hole 144 formed in the external appearance 141, and an end portion of the first gas injection hole 143 through which the process gas is injected may be exposed to the outside of the external appearance 141. have.
  • the second gas injection hole 145 is in the form of a hole formed in the exterior 141, and a space occupied by the first inner tube 142 and the second inner tube 147 of the exterior 141 through the second gas injection hole 145.
  • Process gas supplied to the internal space 146 except for may be injected to the outside.
  • the shapes of the first and second gas injection holes 143 and 145 are not limited thereto, and various modifications are possible.
  • the process gases supplied on the plurality of substrates 10 may be variously changed according to the type of epitaxial layer to be formed on the substrate 10 or the method of forming the epitaxial layer.
  • the process gases supplied on the plurality of substrates 10 may be variously changed according to the type of epitaxial layer to be formed on the substrate 10 or the method of forming the epitaxial layer.
  • gallium nitride (GaN) layer in order to form an epitaxial gallium nitride (GaN) layer on the plurality of substrates 10 by using the MOCVD method, trimethylgallium (TMG), triethylgallium (TEG), NH 3 gas, or the like may be used as the process gas. have.
  • GaCl, NH 3, H 2 gas, etc., generated by reacting Ga metal with HCl gas may be used as the process gas.
  • the process gas may be used as the process gas.
  • the process gas supply unit 140 used in the batch deposition layer forming apparatus may process process gas injected from the first gas injection hole 143 and process gas injected from the second gas injection hole 145. It is desirable to make them different. For example, in order to form an epitaxial gallium nitride layer on the plurality of substrates 10 using the MOCVD method, the first gas injection port 143 injects a TMG gas or a TEG gas, and the second gas injection port 145. ) Can be injected with NH3 gas.
  • the process gas supply part 140 of the present invention since each of the plurality of process gases is injected through the first gas injection port 143 and the second gas injection port 145, the process gas supply part before the process gas reaches the substrate ( Reaction with each other in the 140 may prevent the deposition material from being deposited on the inner wall of the process gas supply unit 140.
  • the second inner tube 147 is positioned in the center of the outer shell 141 and is used to provide a halogen-containing gas (eg, HCl) to the process gas generator 160 to be described later.
  • a halogen-containing gas eg, HCl
  • a batch deposition layer forming apparatus may include a process gas exhaust unit 150.
  • the process gas exhaust unit 150 may perform a function of exhausting the process gas to the outside of the chamber 110.
  • the process gas exhaust unit 150 may be formed in a cylindrical shape surrounding the periphery of the plurality of substrate supports 131.
  • a plurality of exhaust ports 155 for exhausting the process gas may be formed at a height corresponding to each of the substrate supports 131 in the process gas exhaust unit 150.
  • the exhaust port 155 may be formed in a slit shape, but the shape is not limited thereto.
  • the number of exhaust ports 155 may be variously changed according to the purpose of the present invention is used.
  • a suction means for sucking the process gas is connected to the outside of the process gas exhaust unit 150 to exhaust the process gas to the outside through the exhaust port 155.
  • the exhaust port 155 is preferably located near the substrate support 131.
  • a batch deposition layer forming apparatus may include a process gas generator 160.
  • the process gas generator 160 may be formed in the chamber 110, and may be located at an upper portion of the chamber 110. Therefore, the metal halogen gas generated in the process gas generator 160 may be supplied downward from the top of the process gas supply unit 140.
  • a metal source eg, Ga source
  • a halogen-containing gas eg, HCl
  • the generated metal halide gas is supplied to the process gas supply unit 140.
  • the specific structure of the process gas generator 160 will be described later.
  • a batch deposition film forming apparatus may include a baffle unit 170.
  • the baffle unit 170 may be positioned below the substrate support 131 to block the heat generated in the chamber 110 from leaking to the outside.
  • the baffle unit 170 may prevent the heat from flowing out through the lower support 130. You can block.
  • the batch deposition film forming apparatus may be configured such that the rotating unit 180 is positioned.
  • the rotating unit 180 may rotate the process gas supply unit 140 and may be positioned below the process gas supply unit 140.
  • FIG 3 is a cross-sectional view illustrating a structure of a process gas generator 160 according to an embodiment of the present invention.
  • the process gas generating unit 160 includes an inflow passage 161 through which a halogen-containing gas such as HCl supplied from the second inner tube 147 passes and a halogen-containing gas supplied from the inflow passage 161.
  • the storage unit 166 and the discharge path 164 for supplying the metal halogen gas generated by the reaction between the metal source 163 and the halogen-containing gas to the first inner tube 142 may be included.
  • the halogen-containing gas supplied upward through the second inner tube 147 of the supply gas supply unit 140 may be supplied into the process gas generator 160 through the inlet passage 161.
  • the halogen-containing gas supplied into the process gas generator 160 may be supplied to the metal source 163 through the first communicator 162a and the second communicator 162b.
  • the metal source 163 may be, for example, a Ga source.
  • the supply gas generating unit 160 may have a cylindrical shape, and the first communicating unit 162a and the second communicating unit 162b may be supplied from the inlet passage 161 located in the center of the supply gas generating unit 160.
  • the halogen-containing gas may flow along the outer circumference of the generation unit 160 to reach the metal source 163.
  • the area and time of the halogen-containing gas in contact with the metal source 163 can be increased, as compared with the case where the halogen-containing gas is in contact with the metal source 163 immediately after the inflow path 161 is introduced.
  • the probability that the halogen-containing gas reacts with the metal in the metal source 163 to become a metal halogen gas can be increased.
  • the metal source 163 is located inside the chamber 110 maintained at a high temperature by the heater 120, there is no need to use a separate heater to maintain a temperature for the reaction between the halogen-containing gas and the metal and the reaction. Easy temperature control
  • the halogen-containing gas supplied to the metal source 163 reacts with the metal included in the metal source 163 to generate a metal halogen gas, and the generated metal halogen gas is discharged through the discharge passage 164 to the first inner tube 142.
  • the halogen-containing gas flowing along the outer circumference of the process gas generator 160 reacts with the metal source 163 to form the first inner tube 142 located at the center side of the supply gas generator 160.
  • a discharge path 164 may be formed in the supply gas generating unit 160 so that the discharge path 164 may flow.
  • the metal halogen gas may be prevented from liquefying or condensing in the discharge path 164.
  • the metal halogen gas supplied to the first inner tube 142 may be injected down the inside of the first inner tube 142 and injected into the plurality of substrates 10 through the first gas injection hole 143.
  • the block 165 may be disposed in the supply gas generator 160.
  • the block 165 may be disposed in the supply gas generator 160 so that a gap is formed between the inner surface of the supply gas generator 160 and the block 165, and the gap is introduced according to the formed position.
  • the furnace 161, the first communication unit 162a, the second communication unit 162b, and the discharge path 164 may be provided.
  • the metal source 163 for generating the metal halide gas and the discharge passage 164 for supplying the metal halide gas to the process gas supply unit 140 may be located inside the chamber 110. Therefore, unlike the conventional deposition layer forming apparatus in which the element supplying the metal halogen gas is located outside the chamber, it is not necessary to separately include a heater for maintaining the reaction temperature of the metal source 163. It is easy to control the reaction temperature of the 163, it is possible to prevent the phenomenon that the metal halide gas flowing along the discharge path 164 liquefied or condensed by the low temperature. Therefore, the metal halogen gas can be stably supplied to the process gas supply unit 140.

Abstract

La présente invention concerne un appareil de dépôt par lots. Ledit appareil comprend, selon un mode de réalisation de la présente invention : une chambre pour fournir un espace permettant de déposer une couche sur une pluralité de substrats ; un élément chauffant agencé sur l'extérieur de la chambre pour chauffer la pluralité de substrats ; un support de substrat agencé sur l'intérieur de la chambre pour soutenir la pluralité de substrats ; une partie alimentation en gaz de traitement agencée sur l'intérieur de la chambre à travers le centre du support de substrat pour alimenter en gaz de traitement la pluralité de substrats ; une partie gaz d'échappement permettant de décharger le gaz de traitement ; et une partie génération de gaz de traitement agencée sur l'intérieur de la chambre pour fournir à la partie alimentation en gaz de traitement un premier gaz de traitement généré par la réaction d'un métal d'une source métallique avec un gaz contenant un halogène.
PCT/KR2014/000900 2013-02-01 2014-02-03 Appareil de dépôt par lots WO2014119955A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20130011869 2013-02-01
KR10-2013-0011869 2013-02-01
KR10-2014-0011304 2014-01-29
KR1020140011304A KR101555021B1 (ko) 2013-02-01 2014-01-29 배치식 증착층 형성장치

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WO2014119955A1 true WO2014119955A1 (fr) 2014-08-07

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US20160289833A1 (en) * 2015-03-31 2016-10-06 Tokyo Electron Limited Vertical Heat Treatment Apparatus

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JPH11260734A (ja) * 1998-03-12 1999-09-24 Nec Corp 半導体装置の製造方法
KR20030088409A (ko) * 2003-10-30 2003-11-19 주식회사 테라텍 리모트 플라즈마를 이용하는 배치형 애싱장치
US20060258157A1 (en) * 2005-05-11 2006-11-16 Weimer Ronald A Deposition methods, and deposition apparatuses
KR20110098443A (ko) * 2010-02-26 2011-09-01 주식회사 티지솔라 발광 다이오드 제조용 금속 질화막 형성 장치
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Publication number Priority date Publication date Assignee Title
JPH11260734A (ja) * 1998-03-12 1999-09-24 Nec Corp 半導体装置の製造方法
KR20030088409A (ko) * 2003-10-30 2003-11-19 주식회사 테라텍 리모트 플라즈마를 이용하는 배치형 애싱장치
US20060258157A1 (en) * 2005-05-11 2006-11-16 Weimer Ronald A Deposition methods, and deposition apparatuses
KR20110098443A (ko) * 2010-02-26 2011-09-01 주식회사 티지솔라 발광 다이오드 제조용 금속 질화막 형성 장치
KR20110103630A (ko) * 2010-03-15 2011-09-21 주식회사 티지솔라 배치식 에피택셜층 형성장치 및 그 형성방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160289833A1 (en) * 2015-03-31 2016-10-06 Tokyo Electron Limited Vertical Heat Treatment Apparatus

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