WO2014119810A1

WO2014119810A1 - Mems device manufacturing method

Info

Publication number: WO2014119810A1
Application number: PCT/KR2013/000832
Authority: WO
Inventors: 임성규; 김영수; 김희연; 강민호; 오재섭; 이귀로
Original assignee: 한국과학기술원
Priority date: 2013-02-01
Filing date: 2013-02-01
Publication date: 2014-08-07
Also published as: CN104955765B; CN104955765A

Abstract

A MEMS device manufacturing method using an amorphous carbon film as a sacrificial layer is provided. According to an embodiment of the present invention, a lower structure is formed. An amorphous carbon film is formed as a sacrificial layer on the lower structure. An upper structure including a sensor structure is formed on the amorphous carbon film. The amorphous carbon film is removed so that the lower structure and the upper structure are spaced apart from each other.

Description

MEMS device manufacturing method

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly, to a MEMS (Micro Electro Mechanical Systems) device and a manufacturing method thereof.

In general, MEMS devices refer to devices incorporating mechanical component parts, sensors, actuators, and electronic circuits on a single silicon substrate, and are currently available as printer heads, pressure sensors, acceleration sensors, gyroscopes, and DMDs. Projector).

Although the main part is manufactured using a semiconductor process, a process called sacrificial layer etching, which is not used for fabricating a semiconductor integrated circuit, needs to be formed because the semiconductor integrated circuit is manufactured as a process of processing a plane. Included. This process uses a sacrificial layer and a structure thin film on a silicon substrate to pattern the shape of the structure and remove the sacrificial layer to fabricate the structure. Silicon or organic polyimide (Polyimide) has been used as a sacrificial layer for maintaining a constant space between the lower electrode or the lower structure and the upper structure.

However, in the conventional MEMS device fabrication, when the silicon is used as the sacrificial layer, the etching selectivity with the oxide film is excellent, but the etching selectivity with the metal such as nitride film and tungsten is not good, and the polyimide is used as the sacrificial layer. There is a problem that the quality is reduced by using a lift off method that is contained, and proceeds at a low temperature in the subsequent process.

The present invention is to solve the various problems including the above problems, has an excellent etching selectivity with various kinds of inorganic materials, and can easily adjust the thickness of the film according to the device, the conventional MEMS in terms of performance and shape It is an object of the present invention to provide a MEMS device and a manufacturing method which are superior to devices and can utilize existing semiconductor processes. However, these problems are exemplary, and the scope of the present invention is not limited thereby.

MEMS device manufacturing method according to an aspect of the present invention is provided. The method of manufacturing a MEMS device includes forming a lower structure; Forming an amorphous carbon film on the lower structure as a sacrificial layer; Forming an insulating support layer on the amorphous carbon film; Forming an etch passivation layer on the insulating support layer and etching the insulating support layer and the amorphous carbon film at once to form via holes through the insulating support layer and the amorphous carbon film to expose the lower structure; Forming an upper structure including a sensor structure on the insulating support layer; Forming at least one through hole penetrating the insulating support layer; And removing all of the amorphous carbon film through the through holes so that the lower structure and the upper structure are spaced apart from each other.

In the manufacturing method, the step of forming the amorphous carbon film may be performed using chemical vapor deposition (CVD).

In the manufacturing method, removing the amorphous carbon film may include a dry etching method. In addition, the dry etching method may be performed by using an oxygen (O ₂ ) plasma.

In the manufacturing method, the forming of the upper structure may further include forming an insulating support layer on the amorphous carbon film.

The manufacturing method may further include forming metal anchors on the lower electrodes to be connected to the lower electrodes through the via holes.

In the manufacturing method, the forming of the upper structure may further include forming an absorbing layer on the insulating support layer.

In the manufacturing method, the lower structure may include a read integrated circuit (ROIC) for controlling the sensor structure.

In the manufacturing method, the sensor structure may include an infrared sensor.

In the manufacturing method, forming the via holes exposing the lower structure through the insulating support layer and the amorphous carbon film may be performed by only one photolithography process.

According to one embodiment of the present invention made as described above, it has an excellent etching selectivity with various kinds of inorganic materials, it is easy to adjust the thickness of the film according to the device is superior to the conventional MEMS device in terms of performance and shape In addition, MEMS devices that can utilize existing semiconductor processes can be implemented. Of course, the scope of the present invention is not limited by these effects.

1 to 6 are cross-sectional views schematically showing a MEMS device and a method of manufacturing the same according to an embodiment of the present invention.

7 is a schematic cross-sectional view of a MEMS device manufactured in accordance with another embodiment of the present invention.

8 to 11 are cross-sectional views illustrating a method of manufacturing a MEMS device according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms, and the following embodiments are intended to complete the disclosure of the present invention, to those skilled in the art It is provided to inform you completely. In addition, the components may be exaggerated or reduced in size in the drawings for convenience of description.

Referring to FIG. 1, a lower structure 12 may be provided. For example, the lower structure 12 may include a suitable logic circuit, such as a Read Out Integrated Circuit (ROIC). The read integrated circuit can be manufactured by forming a CMOS device on a substrate. Further, the lower structure 12 may further include an insulating layer 15 on the substrate, a lower electrode 14b and a reflective layer 14c on the insulating layer 15.

The lower electrode 14b may be used to electrically connect the circuit element and the sensor element in the logic circuit. The lower electrode 14b may be formed to protrude on the insulating layer 15 or may be formed by forming a trench pattern in the insulating layer 15 and then filling it with a metal layer. Reflective layer 14c may be used to reflect light incident on underlying structure 12. In particular, in the case of using the damascene method of forming a trench pattern in the insulating layer 15 and then filling it with a metal layer to implement the lower electrode 14b and the reflective layer 14c, the amorphous carbon film, which will be described later, is formed by chemical vapor deposition. It can be very advantageous in terms of planarization when forming.

Referring to FIG. 2, the sacrificial layer 16 may be formed on the lower structure 12. The sacrificial layer 16 is used to support the upper structure (23 of FIG. 6) described below on the lower structure 12, but finally at least some or all may be removed. For example, the sacrificial layer 16 may include an amorphous carbon film.

For example, the sacrificial layer 16 may be formed using chemical vapor deposition (CVD). The amorphous carbon film 16 may be deposited by various techniques, but for example, plasma enhanced CVD (PECVD) may be used due to the cost efficiency and the possibility of adjusting the film properties. In the plasma enhanced chemical vapor deposition method, helium and argon may be introduced into the chamber as a plasma starting gas and a material including a liquid or gaseous hydrocarbon in a carrier gas. The plasma can be transferred into the chamber to produce excited CH-radicals, which can be chemically constrained to the surface of the substrate located in the chamber to form an a-C: H film on the surface of the substrate. In an embodiment of the present invention, as described above, a damascene method may be used to form a trench pattern in the insulating layer 15 and then embed it with a metal layer to implement the lower electrode 14b and the reflective layer 14c. In this case, the sacrificial layer 16 composed of the amorphous carbon film does not need to perform a separate planarization process such as CMP. If depositing the amorphous carbon film on the uneven lower metal structure and planarizing the amorphous carbon film through the CMP, peeling may occur because the adhesion between the metal and the amorphous carbon film is not good.

Therefore, the process of forming the sacrificial layer 16 may be performed to be compatible with a back-end process such as a metal wiring process of a semiconductor device. That is, the sacrificial layer 16 may be formed using a post-process used in manufacturing a conventional semiconductor device, not a MEMS process. Therefore, following the formation of the lower structure 12, it is possible to proceed with the sacrificial layer 16 and the subsequent metal process by applying most of the process technology used in the existing semiconductor post-process as it is to reduce the manufacturing cost and easy mass production Become.

On the other hand, when the sacrificial layer 16 is formed using a material such as polyimide, it is not easy to apply a high temperature process in a subsequent metal deposition process due to problems such as moisture resorption, so that lift off is performed instead of CVD. The metal must be deposited using the method. In this case, there is a disadvantage in that the step coverage is not good and many impurities remain inside the metal.

However, in this embodiment, the sacrificial layer 16 may be formed of an amorphous carbon film using the CVD method in the medium temperature range, about 200 ° C to 600 ° C. In this case, the metal deposition process can be performed using the CVD method. The CVD method is excellent in step coverage and excellent in the shape and electrical properties of the wiring, and can increase the reliability of the metal deposition process.

On the other hand, the thickness of the sacrificial layer 16 may be appropriately selected in consideration of the separation distance between the lower structure 12 and the upper structure and the subsequent removal burden. For example, in the MEMS structure such as this embodiment, the thickness of the sacrificial layer 16 may be selected in the range of 0.5 to 5 μm. However, in another embodiment, the thickness of the sacrificial layer 16 may be selected without being limited to this range.

Optionally, an insulating support layer 17 may be formed on the sacrificial layer 16. For example, the insulating support layer 17 can be formed of an oxide film using the CVD method.

Referring to FIG. 3, the insulating support layer 17 and the sacrificial layer 16 may be patterned by a single photolithography process to simultaneously form the sacrificial layer 16d having the via holes 19 and the insulating support layer 17a. have. For example, the via holes 19 may be formed by forming a photoresist pattern using photolithography, and simultaneously etching the insulating support layer 17 and the sacrificial layer 16 using the photoresist pattern as an etch protective film. . For example, the via holes 19 may be formed to expose the lower electrodes 14b, and then may be used as a passage connecting the lower electrodes 14b to the upper structure. If the sacrificial layer 16 is made of organic polyimide, after the sacrificial layer 16 is etched by the first photolithography process to form the via holes 19, the insulating support layer 17 may be formed. 2 It must be separately etched by a photolithography process. Since outgassing occurs in the polyimide exposed by the first photolithography process, a separate process for covering the exposed portion of the polyimide is required before the second photolithography process. to be. However, in the embodiments of the present application, since the sacrificial layer 16 is composed of an amorphous carbon film, the above-described problem of outgassing does not occur, and thus, there is no need to prevent the exposure of the amorphous carbon film in the etching process. By the lithography process, the insulating support layer 17 and the sacrificial layer 16 can be etched at once, that is, simultaneously. By replacing the sacrificial layer 16 with an amorphous carbon film in polyimide, the inventor not only avoids the problems such as water resorption, poor step coverage, impurities in subsequent processes, etc., but also uses the characteristics of the amorphous carbon film. In the process of forming the via holes 19, the number of photolithography processes is simplified from two times to one time, thereby providing a manufacturing method that can significantly reduce the manufacturing cost.

Referring to FIG. 4, metal anchors 21 may be formed to be connected to the lower electrodes 14b through the via holes 19. For example, the metal anchors 21 may be formed by forming and patterning a metal layer on the lower electrodes 14b exposed by the via holes 19 using the CVD method. As such a metal layer, a tungsten (W) layer is mentioned, for example. These metal anchors 21 may be used as via plugs that electrically connect the lower electrodes 14b with the upper structure.

Referring to FIG. 5, an upper structure may be formed on the sacrificial layer 16d. For example, the absorbent layer 22 may be formed on the resultant metal anchors 21 formed thereon and the sensor structure 23 may be formed on the absorbent layer 22. The absorber layer 22 can be patterned to include a plurality of holes. For example, the absorber layer 22 may include a metal capable of absorbing infrared rays.

The sensor structure 23 may include various sensors used in the MEMS structure, and may include, for example, an infrared sensor, an ultraviolet sensor, an X-ray sensor, a laser sensor, and the like. For example, an infrared sensor may include a resistance element, a thermoelectric element, and the like. In the case of a bolometer including a resistive element, the resistance may vary depending on the degree of infrared rays absorbed, for example, amorphous silicon, vanadium oxide, or the like.

Referring to FIG. 6, a second insulating support layer 25 may be formed on the sensor structure 23. For example, the second insulating support layer 25 may include an oxide film.

Subsequently, through holes 27 penetrating through the second insulating support layer 25, the sensor structure 23, the absorbing layer 22, and the insulating support layer 17a may be formed. For example, the through holes 27 form a photoresist pattern using a photolithography technique, and the second insulating support layer 25, the sensor structure 23, and the absorption layer 22 using the photoresist pattern as an etch protective film. ) And the insulating support layer 17a may be formed by etching. The number of through holes 27 may be appropriately selected in one or more ranges in consideration of the etching speed of the sacrificial layer 16d. The shape of the through holes 27 may be variously modified, and a cantilever pattern may be realized by the through holes 27.

Subsequently, the sacrificial layer 16d may be removed through the through holes 27 to define the empty space C. The empty space C may contribute to increasing the infrared absorption efficiency by reflecting the infrared rays through the reflective layer 14c and entering the sensor structure 23 again.

For example, when the sacrificial layer 16d is an amorphous carbon film, the sacrificial layer 16d may be etched using wet etching or dry etching. However, when wet etching is used, stiction may occur, but dry etching may be free from such a problem. For example, dry etching may be performed using an oxygen (O ₂ ) plasma.

The MEMS device thus formed may comprise an upper structure including a lower structure 12 and a sensor structure 23. An empty space C from which the

sacrificial layers

16 and 16d are removed may be defined between the lower structure 12 and the sensor structure 23. The sensor structure 23 may be electrically connected to the lower electrodes 14b through the metal anchors 21. Accordingly, the sensor circuit 23 and the logic circuits of the lower structure 12, such as the read integrated circuit, may be structurally connected to each other to constitute a MEMS device. Such MEMS devices may include a variety of sensor structures, such as infrared sensors, ultraviolet sensors, X-ray sensors, laser sensors, and the like.

Referring to FIG. 7, a lower electrode 14 may be formed in the first substrate 12a. The lower electrode 14 may be formed by implanting impurities of the second conductive type into the first substrate 12a of the first conductive type and heat treating the first substrate 12a. Herein, the first conductive type and the second conductive type may be n-type and p-type, or vice versa. In a modified embodiment, the lower electrode 14 may be disposed to protrude on the top surface of the first substrate 12a without being formed in the first substrate 12a.

An amorphous carbon film pattern 16c may be formed on a portion of the first substrate 12a. The amorphous carbon film pattern 16c does not exist on the remaining portion of the first substrate 12a. For example, the amorphous carbon film pattern 16c may be formed to expose at least a portion of the first substrate 12a around the upper surface of the lower electrode 14 and the lower electrode 14. The second substrate 18a and the upper electrode 20 are disposed on the amorphous carbon film pattern 16c. The upper electrode 20 may be disposed at a position facing the lower electrode 14. Therefore, the lower electrode 14 may be spaced apart from the upper electrode 20 by the amorphous carbon film pattern 16c. Of course, the amorphous carbon film pattern 16c may not be interposed between the lower electrode 14 and the upper electrode 20.

For convenience, the structure including the first substrate 12a and / or the lower electrode 14 described above is referred to as a lower structure, and the structure including the second substrate 18a and / or the upper electrode 20 is referred to as an upper structure. You can name it. In this case, the upper structure and the lower structure may be spaced apart by the amorphous carbon film pattern 16c.

As described above, an upper structure may be disposed on the first substrate 12a and the amorphous carbon film pattern 16c. The upper structure may further include a solder bonding layer 24 and a packaging cap layer 26 in addition to the second substrate 18a and the upper electrode 20. The second substrate 18a may correspond to a device layer in the MEMS device. The thickness of the device layer can be arbitrarily adjusted and can have various types of structures. The second substrate 18a may include an upper electrode 20, and the upper electrode 20 injects a second conductive material into a predetermined portion of the second substrate 18a and the second substrate. (18a) can be formed by heat treatment. The upper electrode 20 may be formed at a position facing the lower electrode 14 through the amorphous carbon film pattern 16c.

The upper electrode 20 and the lower electrode 14 are spaced apart by a distance d1 corresponding to the thickness of the amorphous carbon film pattern 16c. Therefore, the upper electrode 20 may be formed so that the position on the lower electrode 14 can be changed.

When the upper electrode 20 and the lower electrode 14, each of which is a conductive plate, are disposed to face each other side by side, the capacitance between the two electrodes is proportional to the area of the two electrodes facing the dielectric constant of the medium between the two electrodes, It may be approximated to a value inversely proportional to the separation distance d1 between two electrodes. When the two electrodes move relative to each other up and down and / or left and right relatively, the gap or overlapping area between the two electrodes changes to change the capacitance. Therefore, by outputting the change in capacitance as an electrical signal it is possible to measure the relative displacement between the two electrodes.

The packaging cap layer 26 may be disposed on the second substrate 18a. The packaging cap layer 26 may serve to protect the MEMS device from the outside. The interior 28 of the packaging cap layer 26 may be sealed to maintain vacuum. A solder joint layer 24 may be interposed between the second substrate 18a and the packaging cap layer 26. The solder joint layer 24 may include at least one of gold, silver, copper, tin, indium, and silicon.

Furthermore, the MEMS device further includes a through electrode 32 penetrating the first substrate 12a and / or the amorphous carbon film pattern 16c to electrically connect the lower electrode 14 and / or the upper electrode 20 to the outside. The lower surface of the first substrate 12a may further include a conductive pad 34 electrically connected to the through electrode 32. According to the cross-sectional direction, although the upper electrode 20 and the second substrate 18a are shown as being separated in FIG. 1, which is a sectional view, the through electrode 32 and the upper electrode ( 20 may be electrically connected. The through electrode 32 may be made of a conductive material, for example, may be made of a material such as copper, tungsten, and aluminum.

For example, the MEMS device according to this embodiment can be used as a gyro sensor, but the scope of this embodiment is not limited thereto.

8 through 11 are cross-sectional views schematically showing a manufacturing process of a MEMS device according to another embodiment of the present invention.

Referring to FIG. 8, first, a first substrate 12 is prepared. The first substrate 12 may be a silicon substrate, and may include various semiconductor materials such as group IV semiconductors, group III-V compound semiconductors, or group II-VI oxide semiconductors. For example, the group IV semiconductor may include germanium or silicon-germanium in addition to silicon. The substrate may be formed of a gallium arsenide substrate, a ceramic substrate, a quartz substrate, a display glass substrate, or the like.

Then, impurities are injected into the first substrate 12 and the first substrate 12 is heat treated to form the lower electrode 14. When the lower electrode 14 is formed by injecting impurities, the lower electrode 14 may be formed in the first substrate 12 without protruding from the upper surface of the first substrate 12. The lower electrode 14 thus formed has the same level as the upper surface of the lower electrode 14 and the upper surface of the first substrate 12. On the other hand, in the modified embodiment, the lower electrode 14 may be disposed to protrude on the upper surface of the first substrate 12a.

The process of injecting impurities may include an ion implant process or a doping process. In the impurity implantation process, for example, an n-type impurity source such as PH ₃ , AsH _3, or the like, or a p-type impurity source such as BF ₃ , BCl _3, or the like may be used. In this case, the lower electrode 14 may have characteristics of a conductor having excellent electrical conductivity.

An amorphous carbon film can be formed on the substrate 12a as a sacrificial layer. Referring to FIG. 9, an amorphous carbon film 16 may be formed on the first substrate 12 having the lower electrode 14 formed therein. In the forming of the amorphous carbon film 16, the amorphous carbon film 16 may be formed using chemical vapor deposition. The amorphous carbon film 16 may be deposited by various techniques, but, for example, plasma enhanced chemical vapor deposition (PECVD) may be used due to the cost efficiency and the possibility of adjusting the film properties.

The temperature for performing the chemical vapor deposition method may be carried out at 200 ℃ to 600 ℃. For example, when argon is used as the diluent gas, the substrate temperature may be reduced to as low as about 300 ° C. during deposition. Lower processing temperatures for the substrate can lower the thermal budget of the process to protect the devices formed on the substrate from dopant movement. In addition, the process may be performed at the same temperature as the semiconductor post-process. Therefore, the manufacturing cost can be lowered because the process technology already used in the existing semiconductor process can be fully utilized.

Referring to FIG. 10, an upper structure may be formed on the first substrate 12 and the amorphous carbon film 16. The upper structure may include a second substrate 18a and an upper electrode 20. The second substrate 18a may be, for example, a silicon substrate. The second substrate 18a may correspond to a device layer in the MEMS device. The thickness of the device layer can be arbitrarily adjusted through bonding and / or thinning of the silicon substrate, for example, can range from 10 μm to 100 μm. Subsequently, the second substrate 18a is subjected to exposure, etching, and cleaning processes. For example, the etching process may be performed by using a so-called Deep RIE (Reactive Ion Etching) method.

The second substrate 18a may include a predetermined structure of various forms. For example, the upper electrode 20 may be formed by implanting impurities into a predetermined portion of the second substrate 18a and heat treating the second substrate 18a. The process of injecting impurities may include an ion implant process or a doping process. In the impurity implantation process, for example, an n-type impurity source such as PH ₃ , AsH _3, or the like, or a p-type impurity source such as BF ₃ or BCl ₃ may be used.

Forming the upper structure may further include depositing tungsten by chemical vapor deposition. Tungsten deposition by chemical vapor deposition can be produced using a WF ₆ / H ₂ mixed gas. WF ₆ can be reduced by silicon, hydrogen and silane, and upon contact with silicon, a selective reaction can be started from the reduction reaction of silicon. Hydrogen reduction reactions can rapidly deposit tungsten on the nucleation layer while forming plugs, and silane reduction reactions can achieve faster deposition rates and smaller tungsten grain sizes than those obtainable in hydrogen reduction reactions. The tungsten thin film formed by such a reaction has a good step coverage property and a low resistance component compared to other materials, and thus may be treated as an important conductor material.

10 to 11, a portion of the amorphous carbon film 16 interposed between the lower electrode 14 and the upper electrode 20 may be removed to form the amorphous carbon film pattern 16b. The process of removing a portion of the amorphous carbon film 16 may be removed after forming at least one of the upper structures, for example, the second substrate 18a, and may use wet etching and / or dry etching. For example, a portion of the amorphous carbon film 16 may be easily removed by using an oxygen (O 2) plasma, which is one of dry etching methods. By using an oxygen (O 2) plasma, it is possible to have an excellent etching selectivity with many kinds of inorganic materials and to easily control the film thickness. Therefore, the lower electrode 14 may be easy to adjust the separation distance between the upper electrode 20 and the two, it is easy to ensure the uniformity of the capacitance can ensure a stable operation of the MEMS device.

The upper structure may further include a solder bonding layer 24 and a packaging cap layer 26 in addition to the second substrate 18a and the upper electrode 20. The packaging cap layer 26 may be attached on the second substrate 18a, and the interior 28 of the packaging cap layer 26 may be sealed to maintain a vacuum, and the second substrate 18a and the packaging cap layer ( The solder joint layer 24 can be interposed between 26). The material for forming the solder joint layer 24 may include at least one of gold, silver, copper, tin, indium, and silicon. For example, the solder bonding layer 24 may be made of various binary or ternary solder alloys such as copper / tin, gold / indium, gold / tin, gold / silicon, copper / gold / tin, and the like.

As described above, the MEMS device according to the technical concept of the present invention forms an amorphous carbon film pattern as a sacrificial layer on a silicon substrate, so that a tungsten deposition process by chemical vapor deposition can be used, thereby providing excellent step coverage. In addition, a device excellent in the shape and electrical properties of the wiring can be manufactured. In addition, since the process is performed at the same temperature as the post-semiconductor process, the process technology already used in the existing semiconductor process can be fully utilized.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims

Forming an undercarriage;

Forming an amorphous carbon film on the lower structure as a sacrificial layer;

Forming an insulating support layer on the amorphous carbon film;

Forming an etch passivation layer on the insulating support layer and etching the insulating support layer and the amorphous carbon film at once to form via holes through the insulating support layer and the amorphous carbon film to expose the lower structure;

Forming an upper structure including a sensor structure on the insulating support layer;

Forming at least one through hole penetrating the insulating support layer; And

Removing all of the amorphous carbon film through the through holes such that the lower structure and the upper structure are spaced apart from each other;

Including, MEMS device manufacturing method.
The method of claim 1,

The forming of the amorphous carbon film is performed using chemical vapor deposition (CVD), MEMS device manufacturing method.
The method of claim 2,

The temperature for performing the chemical vapor deposition method is 200 ℃ to 600 ℃, MEMS device manufacturing method.
The method of claim 1,

Removing the amorphous carbon film includes a dry etching method, MEMS device manufacturing method
The method of claim 4, wherein

The dry etching method is performed by using an oxygen (O 2 ) plasma (Plasma), MEMS device manufacturing method.
The method of claim 1, wherein the forming of the upper structure further comprises forming an insulating support layer on the amorphous carbon film.
The method of claim 1, further comprising forming metal anchors on the lower electrodes to be connected to the lower electrodes through the via holes.
The method of claim 6,

The forming of the upper structure further comprises forming an absorbing layer on the insulating support layer.
The method of claim 1,

And the lower structure includes a read integrated circuit (ROIC) for controlling the sensor structure.
The method of claim 8,

And the sensor structure comprises an infrared sensor.
The method of claim 1,

The thickness of the sacrificial layer is in the range of 0.5 to 5㎛, MEMS device manufacturing method.
The method of claim 1,

Forming via holes through the insulating support layer and the amorphous carbon film to expose the underlying structure using only one photolithography process.