CN111384077B - Semiconductor sensor package and method of forming the same - Google Patents

Semiconductor sensor package and method of forming the same Download PDF

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Publication number
CN111384077B
CN111384077B CN202010296867.1A CN202010296867A CN111384077B CN 111384077 B CN111384077 B CN 111384077B CN 202010296867 A CN202010296867 A CN 202010296867A CN 111384077 B CN111384077 B CN 111384077B
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trench
forming
semiconductor substrate
isolation structure
layer
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CN202010296867.1A
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CN111384077A (en
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侯红伟
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Shanghai Yaokai Electronic Technology Co ltd
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Shanghai Yaokai Electronic Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Abstract

The invention provides a semiconductor sensor package and a method of forming the same, the method comprising the steps of: a semiconductor substrate includes a plurality of photodiode arrays arranged in a matrix, a first trench formed in a peripheral region of each photodiode in the photodiode arrays, and a second trench formed in a facing region of each photodiode, forming an isolation structure in the first trench and filling a flexible material in the second trench, then forming an anti-reflective layer on the second surface of the semiconductor substrate, then forming a photoresist layer, forming a third groove in the region corresponding to the isolation structure, further etching the isolation structure to form a fourth groove communicated with the third groove, then filling metal materials in the third groove and the fourth groove to form an optical isolation structure, then, a color filter unit is formed in an area surrounded by the optical isolation structure, and a microlens is formed on the color filter unit.

Description

Semiconductor sensor package and method of forming the same
Technical Field
The present invention relates to the field of semiconductor packaging technology, and more particularly, to a semiconductor sensor package and a method of forming the same.
Background
The photosensitive device is the most core part of an industrial camera, the image sensor comprises a CMOS and a CCD, and compared with the CCD, the CMOS has the advantages of small volume, low power consumption of 1/10 of the CCD and low price of 1/3 compared with the CCD. Compared with CCD product, CMOS is standard technological process, and can utilize available semiconductor equipment without additional investment and quality. Meanwhile, the number of CMOS production lines in wafer factories is large, and cost reduction is facilitated in future production. In addition, the CMOS sensor is most advantageous in that it has a condition of high system integration. Theoretically, all functions required by the image sensor, such as vertical shift, horizontal shift register, timing control, CDS, ADC …, etc., can be integrated ON one wafer, even all the wafers including Back-end Chip, Flash RAM, etc., can be integrated into a single wafer (SYSTEM-ON-Chip), so as to achieve the purpose of reducing the production cost of the whole machine.
Disclosure of Invention
It is an object of the present invention to overcome the above-mentioned deficiencies of the prior art and to provide a semiconductor sensor package and a method of forming the same.
In order to achieve the above object, the present invention provides a method for forming a semiconductor sensor package, comprising the steps of:
(1) providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface opposite to the first surface, the semiconductor substrate comprises a plurality of photodiode arrays arranged in a matrix, and the photodiode arrays are exposed from the first surface of the semiconductor substrate.
(2) And etching the semiconductor substrate from the second surface of the semiconductor substrate to form a first groove in the surrounding area of each photodiode in the photodiode array and a second groove in the opposite area of each photodiode.
(3) An isolation structure is formed in the first trench, and a flexible material is filled in the second trench.
(4) An anti-reflective layer is then formed on the second surface of the semiconductor substrate.
(5) And then forming a photoresist layer on the antireflection layer, forming a third groove in the photoresist layer in a region corresponding to the isolation structure, and further etching the isolation structure to form a fourth groove which is communicated with the third groove.
(6) And then filling metal materials in the third groove and the fourth groove to form an optical isolation structure, and then removing the photoresist layer.
(7) Color filter units are then formed in the area surrounded by the light isolation structure.
(8) Then, microlenses are formed on the color filter units.
Preferably, the first trench and the second trench are formed by wet etching or dry etching, and the depth of the first trench is greater than the depth of the second trench.
Preferably, the isolation structure comprises a first dielectric layer, a metal layer and a second dielectric layer which are sequentially stacked from bottom to top, and the flexible material comprises one or more of polyimide, a polyester compound, a cyclic olefin polymer, a liquid crystal polymer, rubber and silicone resin.
Preferably, the anti-reflection layer comprises one or more of silicon nitride, silicon oxide and silicon oxynitride, and the anti-reflection layer is of a single-layer structure or a multi-layer structure.
Preferably, the metal material is one or more of copper, aluminum, tungsten, gold, silver, platinum, titanium and palladium.
Preferably, the color filter unit is an organic resin containing a dye, and the material of the microlens is a resin.
The invention also provides a semiconductor sensor package which is prepared by adopting the method.
Compared with the prior art, the invention has the following advantages:
in the forming process of the semiconductor sensor package, the second grooves are formed in the opposite areas of the photodiodes, and the flexible materials are filled in the second grooves, so that when the color filter unit expands due to temperature rise in the using process, the flexible materials can deform correspondingly, and further, the semiconductor substrate cannot generate compressive stress, further, dark current of the image sensor cannot be increased, and further, the performance of the image sensor cannot be influenced.
In addition, in the invention, the same patterned mask is used for etching to form the first groove in the peripheral area of each photodiode in the photodiode array and form the second groove in the opposite area of each photodiode, so that the preparation process is saved, the manufacturing difficulty is reduced, and the production efficiency is improved.
Drawings
Fig. 1-7 are schematic structural diagrams illustrating a process of forming a semiconductor sensor package according to an embodiment of the present invention.
Detailed Description
The invention provides a method for forming a semiconductor sensor package, which comprises the following steps:
(1) providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface opposite to the first surface, the semiconductor substrate comprises a plurality of photodiode arrays arranged in a matrix, and the photodiode arrays are exposed from the first surface of the semiconductor substrate.
(2) And etching the semiconductor substrate from the second surface of the semiconductor substrate to form a first groove in the surrounding area of each photodiode in the photodiode array and a second groove in the opposite area of each photodiode.
(3) An isolation structure is formed in the first trench, and a flexible material is filled in the second trench.
(4) An anti-reflective layer is then formed on the second surface of the semiconductor substrate.
(5) And then forming a photoresist layer on the antireflection layer, forming a third groove in the photoresist layer in a region corresponding to the isolation structure, and further etching the isolation structure to form a fourth groove which is communicated with the third groove.
(6) And then filling metal materials in the third groove and the fourth groove to form an optical isolation structure, and then removing the photoresist layer.
(7) Color filter units are then formed in the area surrounded by the light isolation structure.
(8) Then, microlenses are formed on the color filter units.
Preferably, the first trench and the second trench are formed by wet etching or dry etching, and the depth of the first trench is greater than the depth of the second trench.
Preferably, the isolation structure comprises a first dielectric layer, a metal layer and a second dielectric layer which are sequentially stacked from bottom to top, and the flexible material comprises one or more of polyimide, a polyester compound, a cyclic olefin polymer, a liquid crystal polymer, rubber and silicone resin.
Preferably, the anti-reflection layer comprises one or more of silicon nitride, silicon oxide and silicon oxynitride, and the anti-reflection layer is of a single-layer structure or a multi-layer structure.
Preferably, the metal material is one or more of copper, aluminum, tungsten, gold, silver, platinum, titanium and palladium.
Preferably, the color filter unit is an organic resin containing a dye, and the material of the microlens is a resin.
The invention also provides a semiconductor sensor package which is prepared by adopting the method.
The following is a detailed description of the formation process of the semiconductor sensor package in conjunction with the schematic structural diagrams of fig. 1-7.
Referring to fig. 1, a semiconductor substrate 100 is provided, the semiconductor substrate 100 has a first surface and a second surface opposite to the first surface, the semiconductor substrate 100 includes a plurality of photodiode arrays 101 arranged in a matrix, and the photodiode arrays 101 are exposed from the first surface of the semiconductor substrate.
In a specific manufacturing process, a semiconductor substrate 100 is provided, a photodiode array region and a peripheral region are defined on the semiconductor substrate, a patterned photoresist layer is formed on the semiconductor substrate 100, an ion implantation process or a thermal diffusion process is performed with the photoresist layer as a mask, doped ions are implanted into the semiconductor substrate to form a photodiode array 101, and then the photoresist layer is removed. The thickness of the semiconductor substrate 100 is 300-500 micrometers, preferably the thickness of the semiconductor substrate 100 is 350-450 micrometers, the semiconductor substrate 100 may specifically be a monocrystalline silicon substrate, a polycrystalline silicon substrate, a monocrystalline germanium substrate, a polycrystalline germanium substrate, furthermore, the semiconductor substrate 100 may also be a silicon germanium substrate, a silicon carbide substrate, a gallium arsenide substrate, or gallium nitride, which are suitable for being applied to an image sensor, the semiconductor substrate 100 may also be a silicon-on-insulator substrate, a germanium-on-insulator substrate, or an insulating substrate with an epitaxial functional layer, wherein the insulating layer is a glass substrate or a ceramic substrate.
The method further includes forming at least one dielectric layer on the first surface of the semiconductor substrate 100, wherein the dielectric layer is made of one or more of silicon oxide, silicon nitride, silicon oxynitride and aluminum oxide, the dielectric layer is formed by a PECVD method, a thermal oxidation method or an ALD method, and then at least one metal interconnection process is performed, and the metal interconnection process is electrically connected to the photodiode array 101 through an opening of the dielectric layer. The metal interconnect includes a plurality of metal layers and conductive vias in the plurality of metal layers. The metal interconnects are made of one or more of copper, aluminum, titanium, palladium, silver, tantalum, gold, nickel and cobalt, and are formed by one of evaporation, magnetron sputtering, electroplating and chemical plating.
Referring to fig. 2, the semiconductor substrate 100 is etched from the second surface thereof to form a first trench 110 in the surrounding region of each photodiode in the photodiode array 101, and a second trench 120 in the opposite region of each photodiode, and the first trench 110 and the second trench 120 are formed by wet etching or dry etching, wherein the depth of the first trench 110 is greater than that of the second trench 120, preferably, the depth of the first trench 110 is 250-450 microns, and the depth of the second trench 120 is 150-350 microns. In a specific implementation, a photoresist layer is formed on the second surface of the semiconductor substrate 100, and the photoresist layer is exposed to light and developed through an exposure and development process, a first opening corresponding to a surrounding area of each photodiode in the photodiode array 101 is formed in the photoresist layer, forming a second opening in the photoresist layer at a region opposite to each photodiode, and etching the semiconductor substrate by a laser ablation process or a chemical etching solution, to form a first trench 110 in a surrounding area of each photodiode in the photodiode array 101, and a second trench 120 is formed in a facing area of each of the photodiodes, and when the depth of the etched second trench reaches a target depth, and forming a photoresist mask in a region corresponding to the second trench, and further etching the first trench 110 to make the first trench 110 reach a proper depth.
Referring to fig. 3, an isolation structure 200 is formed in the first trench 110, and a flexible material 300 is filled in the second trench 120, in a specific embodiment, the isolation structure 200 includes a first dielectric layer, a metal layer, and a second dielectric layer that are sequentially stacked from bottom to top, the first dielectric layer and the second dielectric layer are made of one or more of silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide, the first dielectric layer and the second dielectric layer are formed by a plasma enhanced chemical vapor deposition process or an atomic layer deposition process, the metal layer is made of one or more of copper, aluminum, silver, nickel, titanium, and palladium, and is formed by an evaporation or magnetron sputtering process, the metal layer can play a role in shielding, and then a flexible material layer is formed on the second surface of the semiconductor substrate 100 by processes of spin coating, spray coating, slit coating, and the like, thereby allowing a portion of the flexible material to fill the second trench 120, and then processing the semiconductor substrate through a CMP or planarization process to allow the flexible material including one or more of polyimide, polyester compound, cyclic olefin polymer, liquid crystal polymer, rubber, and silicone only in the second trench.
Referring to fig. 4, an anti-reflective layer 400 is then formed on the second surface of the semiconductor substrate 100, wherein the anti-reflective layer 400 includes one or more of silicon nitride, silicon oxide, and silicon oxynitride, and the anti-reflective layer 400 is a single-layer structure or a multi-layer structure and is deposited by a PECVD method or a thermal oxidation method. By providing the antireflection layer, light reflection is effectively reduced, and the sensitivity of the photodiode array 101 is further improved.
Referring to fig. 5, a photoresist layer 500 is formed on the anti-reflective layer 400, a third trench 501 is formed in the photoresist layer 500 in a region corresponding to the isolation structure 200 to expose the isolation structure 200, the isolation structure 200 is further etched to form a fourth trench 502 penetrating the third trench 501, and the third trench 501 and the fourth trench 502 are formed by wet etching or dry etching.
Referring to fig. 6, a metal material is filled in the third trench 501 and the fourth trench 502 to form an optical isolation structure 600, and then the photoresist layer 500 is removed, wherein the metal material is one or more of copper, aluminum, tungsten, gold, silver, platinum, titanium, and palladium, and the optical isolation structure 600 is deposited by thermal evaporation, electron beam evaporation, or magnetron sputtering.
Referring to fig. 7, a color filter unit 700 is then formed in the area surrounded by the optical isolation structure 600. Specifically, the color filter unit 700 is formed by spin-coating a material of a color filter layer, the color filter unit 700 is a resin material containing a dye, specifically a photoresist material containing a dye, and then the microlens 800 is formed on the color filter unit 700, the microlens is made of a resin, specifically a resin material is spin-coated first, and then the microlens 800 is formed by a molding process.
The invention also provides a semiconductor sensor package which is prepared by adopting the method.
In the forming process of the semiconductor sensor package, the second grooves are formed in the opposite areas of the photodiodes, and the flexible materials are filled in the second grooves, so that when the color filter unit expands due to temperature rise in the using process, the flexible materials can deform correspondingly, and further, the semiconductor substrate cannot generate compressive stress, further, dark current of the image sensor cannot be increased, and further, the performance of the image sensor cannot be influenced.
In addition, in the invention, the same patterned mask is used for etching to form the first groove in the peripheral area of each photodiode in the photodiode array and form the second groove in the opposite area of each photodiode, so that the preparation process is saved, the manufacturing difficulty is reduced, and the production efficiency is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (6)

1. A method of forming a semiconductor sensor package, comprising: the method comprises the following steps:
(1) providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface opposite to the first surface, the semiconductor substrate comprises a plurality of photodiode arrays arranged in a matrix, and the photodiode arrays are exposed from the first surface of the semiconductor substrate;
(2) etching the semiconductor substrate from the second surface of the semiconductor substrate to form a first trench in a peripheral region of each photodiode in the photodiode array and a second trench in a facing region of each photodiode;
(3) forming an isolation structure in the first trench, and filling a flexible material in the second trench;
(4) then forming an antireflection layer on the second surface of the semiconductor substrate;
(5) forming a photoresist layer on the antireflection layer, forming a third groove in a region, corresponding to the isolation structure, in the photoresist layer, and further etching the isolation structure to form a fourth groove communicated with the third groove;
(6) filling metal materials in the third groove and the fourth groove to form an optical isolation structure, and then removing the photoresist layer;
(7) then forming a color filter unit in an area surrounded by the optical isolation structure;
(8) then forming a microlens on the color filter unit;
wherein, the first trench and the second trench are formed by wet etching or dry etching, the depth of the first trench is greater than that of the second trench, the depth of the first trench is 250-450 microns, and the depth of the second trench is 150-350 microns;
wherein the flexible material comprises one or more of polyimide, polyester compound, cyclic olefin polymer, liquid crystal polymer, rubber and silicone.
2. The method of forming a semiconductor sensor package of claim 1, wherein: the isolation structure comprises a first dielectric layer, a metal layer and a second dielectric layer which are sequentially stacked from bottom to top.
3. The method of forming a semiconductor sensor package of claim 1, wherein: the antireflection layer comprises one or more of silicon nitride, silicon oxide and silicon oxynitride, and is of a single-layer structure or a multi-layer structure.
4. The method of forming a semiconductor sensor package of claim 1, wherein: the metal material is one or more of copper, aluminum, tungsten, gold, silver, platinum, titanium and palladium.
5. The method of forming a semiconductor sensor package of claim 1, wherein: the color filter unit is organic resin containing dye, and the material of the micro lens is resin.
6. A semiconductor sensor package formed by the method of any of claims 1-5.
CN202010296867.1A 2020-04-15 2020-04-15 Semiconductor sensor package and method of forming the same Expired - Fee Related CN111384077B (en)

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US9659981B2 (en) * 2012-04-25 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor with negatively charged layer
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