WO2014113168A1 - Finned shutter disk for a substrate process chamber - Google Patents
Finned shutter disk for a substrate process chamber Download PDFInfo
- Publication number
- WO2014113168A1 WO2014113168A1 PCT/US2013/075570 US2013075570W WO2014113168A1 WO 2014113168 A1 WO2014113168 A1 WO 2014113168A1 US 2013075570 W US2013075570 W US 2013075570W WO 2014113168 A1 WO2014113168 A1 WO 2014113168A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- shutter disk
- angled
- process chamber
- disposed
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Definitions
- Embodiments of the present invention generally relate to substrate processing chambers.
- conditioning operations are periodically performed.
- one such conditioning operation is a pasting process, wherein a covering is applied over materials deposited on process chamber surfaces to prevent the deposited materials from flaking off the process chamber surfaces and contaminating the substrate during subsequent processes.
- a shutter disk may be positioned via a transfer robot atop a substrate support disposed in the process chamber to prevent the deposition of any materials upon the substrate support.
- target material on the shutter disk may be removed from the shutter disk and pasted onto the process kit to prevent flaking.
- shutter disks are provided herein than may provide improved pasting uniformity.
- a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.
- a process chamber may include a chamber body defining an inner volume, a process kite disposed in the chamber body, a substrate support disposed within the chamber body for supporting a substrate, a shutter disk fabricated from a target material, and a transfer robot movably coupled to the chamber body for transferring the shutter disk to and from the substrate support.
- the shutter disk may include a top surface of the body, wherein the top surface includes at least one substantially horizontal planar surface, and at least one angled structure, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter.
- Figure 1 a is a top view of an exemplary shutter disk in accordance with some embodiments of the present invention.
- Figure 2 depicts a partial cross sectional view of an exemplary shutter disk, in accordance with some embodiments of the present invention.
- Figure 3 depicts an isometric view of an exemplary shutter disk, in accordance with some embodiments of the present invention.
- Figure 4 is a schematic diagram of an exemplary process chamber suitable for use in connection with some embodiments of the present invention.
- identical reference numerals have been used, where possible, to designate identical elements that are common to the figures.
- the figures are not drawn to scale and may be simplified for clarity. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
- Embodiments of the present invention generally relate to a shutter disk for use in substrate process chambers, such as, for example, semiconductor manufacturing process chambers, and to substrate process chambers incorporating such shutter disks.
- the inventive apparatus includes a shutter disk for use in conditioning and cleaning operations of process chambers.
- the inventive apparatus may advantageously provide a shutter disk that provides better pasting uniformity of shutter disk target material onto the walls of a process kit or process chamber.
- Figure 1 is a top view of the exemplary shutter disk 100, in accordance with some embodiments of the present invention.
- Figure 2 depicts a cross sectional side view of the exemplary shutter disk of Figure 1 , in accordance with some embodiments of the present invention.
- the reader should refer simultaneously to Figures 1 and 2.
- relational terms such as first and second, top and bottom, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
- the shutter disk and its components may have any suitable geometry as required for use within a particular process chamber
- Exemplary shutter disk 100 generally comprises a body 102 having an outer diameter 1 18 and a central axis 104.
- the shutter disk is a solid disk and configured to substantially cover a substrate support when disposed over the substrate support.
- the shutter disk 100 is fabricated from a target material to be deposited on walls of a process chamber, or a process kit disposed in a process chamber, during a process chamber process such as, for example, a pasting process or other preclean process.
- the target materials used may include any suitable pasting material, such as ductile materials with a lower Young's Modulus to help to reduce shear stress and brittleness, while having a higher sputtering rate. Examples of such materials include aluminum, an aluminum alloy, titanium, copper, silver, gold, a metal composite, and the like.
- a top surface of the body 102 of shutter disk 100 may include a central portion 106 having a substantially horizontal planar surface.
- the central portion 106 may be circular as shown in Figure 1 , however any suitable geometry may be used.
- the top surface of the body 102 of shutter disk 100 may also include one or more angled structures 108, or "fins", disposed radially outward of the central portion 106.
- the height of the central portion 106 from the top surface of the body 102 may be about 0.03 inches to about 0.3 inches.
- each of the one or more angled structures has a top portion 210 and an angled surface 220 disposed at a downward angle in a radially outward direction from the top portion 210 toward the outer perimeter 1 18.
- the top portion 210 of angled structure 108 may be rounded to providing arcing during pasting and other plasma processes performed.
- the downward angle 270 of the angled surface 220 is about 15 degrees to about 60 degrees.
- Each of the one or more angled structures includes a backside (not shown) that opposes the angled surface 220.
- the one or more angled structures 108 include a plurality of angled structures 108 (e.g., fins) sufficient to uniformly deposit target pasting material onto side walls and corners of a process chamber and/or process kit (as will be described in more detail below with respect to Figure 4).
- each of the plurality of angled structures 108 is radially separated by a substantially horizontal planar surface 224.
- the distance 252 between the top portion 210 of two adjacent fins may be about 0.1 inches to about 1 .0 inches.
- the corner 212 between each angled structure 108 and the substantially horizontal planar surface 224 is rounded to prevent arcing that may occur at sharp corners.
- each angled structure 108 from a top surface of the shutter disk 100 may be about 0.06 inches to about 0.3 inches.
- the one or more angled structures 108 may be annular structures disposed at different radial distances from the central axis 104 of the shutter disk 100.
- a plurality of radial support ridges 1 10 are disposed on the top surface of the body 102 to provide structural strength to substantially prevent the shutter disk 100 from bowing/warping during high power and/or high temperature processing.
- the plurality of support ridges 1 10 may extend radially outward from the central axis 104 of the shutter disk 100 and may be equidistantly spaced from each other.
- At least some of the plurality of ridges 1 10 may be extend directly and radially outward from the central portion 106 of the shutter disk 100, and/or at least some of the plurality of ridges 1 10 may extend directly and radially inward from the top portion 210 of the outermost angled structures 108 on the shutter disk 100.
- the bottom of shutter disk 100 may include a double step connecting the bottom surface to the outer diameter 1 18 of the shutter disk 100.
- the double step may include an outer step 1 12 and an inner step 1 14, the outer step extending upward further into the body than the inner step.
- the outer step 1 12 may help avoid stacking tolerance, material accumulation at the edge, and possible bonding the of shutter disk to an adjacent supporting structure. For example, when multiple components are assembled together, or sitting on top of each other such as shutter disk 100 sitting on a substrate support, the dimensional tolerance of each component will be the addition of the maximum of each design. In a situation where flatness is critical, designing the components to avoid or minimize the stacking tolerance is important. As such, the outer step 1 12 may help avoid stacking tolerance.
- the inner step 1 14 may be used to facilitate centering of the shutter disk on a supporting structure such as a shutter disk carrier.
- the outer step 1 12 may have a depth 254 extending upward into the body 102 by about 0.05 inches to about 0.1 inches from the bottom surface of the body 102.
- the outer step 1 12 may be disposed about 0.1 inches to about 0.5 inches from the outer diameter 1 18 (shown as length 266).
- the inner step 1 14 may have a depth 258 extending upward into the body 102 by about 0.05 inches to about 0.1 inches from the bottom surface of the body 102.
- the inner step 1 14 may be disposed about 0.5 inches to about 1 .0 inches from the outer step 1 12 (shown as length 260).
- the body 102 of shutter disk 100 may also include a cutout portion 214 formed in the bottom surface at step feature 1 16 and disposed radially inward of the double step.
- the cutout portion 214 may be used to reduce material usage and weight.
- the cutout portion 214 may have a depth 264 extending upward into the body 102 up to about 0.1 inches from the bottom surface of the body 102.
- the step feature 1 16 may be disposed about 0.1 inches to about 4.5 inches from the beginning of the double step (i.e., inner step 1 14) (shown as length 262).
- Figure 3 depicts an isometric view of shutter disk 100 showing the body 102, angled structures 108, center portion 106 and the support ridges 1 10.
- the shutter disk 100 may be fabricated from a target material to be deposited on walls of a process chamber, or a process kit disposed in a process chamber, during a process chamber preclean process, for example. Typically, the shutter disk 100 and all its features comprised of the same target material to prevent any relative deformation between the features. In some embodiments, the shutter disk may be fabricated from a target material selected from a group consisting of aluminum, an aluminum alloy, titanium, and a metal composite. The shutter disk 100 may be constructed of any suitable material having a mechanical stiffness sufficient enough to resist deformation due to the additional weight of materials which may be deposited atop the shutter disk 100.
- the material may also be lightweight so as to allow the shutter disk 100 to be easily maneuvered by a transfer robot.
- the shutter disk 100 may be fabricated via any method suitable for forming the desired shape, for example, mold casting, die casting, spray casting, spray deposition, machining or the like.
- the shutter disk 100 and all its features are machined from one block of material.
- the shutter disk 100 is comprised of the same material used in the process chamber for depositing/etching substrates.
- FIG. 4 is a schematic diagram of an exemplary process chamber 400 for use in connection with some embodiments of the present invention.
- the process chamber 400 may be one of a plurality of chambers combined to form a multi-chamber processing system (e.g., a cluster tool or inline tool).
- the process chamber 400 may be a standalone process chamber.
- the process chamber 400 may be a deposition chamber, for example, a physical vapor deposition (PVD) chamber.
- the process chamber 400 may be any suitable process chamber in which a shutter disk 100 may be used during chamber cleaning and or seasoning processes.
- the process chamber 400 includes a chamber body 402 and a lid assembly 404 that defines an evacuable process volume 406.
- the chamber body 402 generally includes one or more sidewalls 408 and a bottom wall 410.
- the one or more sidewalls 408 may be a single circular sidewall or multiple sidewalls in process chambers having non-circular configurations.
- a shutter garage located outside of process chamber 400 may store the shutter disk 100 and move it into process chamber 400 through an opening 412 in process chamber 400.
- the lid assembly 404 of the chamber body 402 generally supports an annular shield 418.
- the lid assembly 404 generally comprises a target and a magnetron (not shown).
- the shutter disk 100 provides material that is deposited the chamber walls during a preclean or similar process to condition the chamber for substrate processing.
- the angled structures 108 on the shutter disk 100 enhances uniform consumption of the target material that shutter disk 100 is coated with, or fabricated from, during processing.
- the shield 418 and substrate support 426 are biased relative each other by a power source 428.
- An inert gas for example, argon, is supplied to the process volume 406 from a gas source (not shown).
- a plasma is formed between the shutter disk 100 and the shield 418 from the gas. Ions within the plasma are accelerated toward shutter disk 100 and cause material to become dislodged from the shutter disk 100.
- the dislodged target material is attracted towards the chamber walls 404, 408, 410, shield walls 418 and process kit 432 and deposits a film of material thereon.
- the substrate support 426 is generally disposed in the chamber body 402 and supports shutter disk 100.
- a lower carrier member 430 may be used to form a two piece shutter disk assembly when shutter disk 100 is disposed on the lower carrier member 430.
- the shutter disk 100 and the lower carrier member 430 are movably disposed or coupled with respect to each other such that the lower carrier member 430 and the shutter disk 100 may move in relation to each, for example, to allow for independent thermal expansion and contraction of the components. In some embodiments, the shutter disk 100 may merely rest upon the lower carrier member 430.
- the lower carrier member 430 supports the shutter disk 100.
- a bottom surface of the lower carrier member 430 and the bottom surface of the shutter disk 100 define a substantially planar surface which contacts, and is supported by, substrate support 426.
- substrate support 426 In other embodiments, only the lower carrier member 430 is in contact with substrate support 426, which may be used to control/change RF coupling.
- the carrier member 430 may not be a ring, and may support shutter disk 100 along the entire bottom surface.
- the lower carrier member 430 may be a solid disk (not shown) with no central opening, similar to shutter disk 100.
- the lower carrier member 430 may comprise a thermally stable material to minimize thermal deformation of the lower carrier member 430.
- lower carrier member 430 may comprise at least one of ceramic, silicon carbide coated graphite, solid silicon carbide, solid sintered silicon carbide, or solid sintered silicon carbide fabricated with metal-free sintering agents, such as PUREBETA®, available from Bridgestone, or the like.
- the lower carrier member 430 may comprise a material with a coefficient of thermal expansion of about 5.6E-6 m/m K to about 22.2E-6 m/m K.
- the lower carrier member 430 may comprise a thermally conductive material.
- the lower carrier member 430 may comprise an electrically insulating material.
- the lower carrier member 430 may be constructed of suitable materials having a mechanical stiffness sufficient enough to substantially resist deformation due to the additional weight of the shutter disk 100 and materials which may be deposited atop the shutter disk 100 during use.
- the material may also be lightweight so as to allow the shutter disk assembly (i.e., shutter disk 100 and lower carrier member 430) to be easily maneuvered by a transfer robot.
- one or more surfaces of the lower carrier member 430 and/or the shutter disk 100 which are in contact with each other may be finished in such a way to facilitate ease of movement due to thermal deformation between the lower carrier member 430 and shutter disk 100.
- shutter disk assembly i.e., shutter disk 100 and lower carrier member 430
- the thickness from the of the top potion 210 of the shutter disk to the bottom surface of the lower support carrier 430 may be about 0.1 to about 0.25 inches, for example, about 0.15 inches. Other sizes may be used depending upon the configuration and size of the substrate support.
- the shutter disk assembly will have an outer diameter equal to that of a diameter of a substrate that is to be processed with a tolerance of +/-50mm.
- the shutter disk assembly and the shutter disk 100 are not limited to round shapes and may have any shape suitable for use in a process chamber as disclosed herein.
- ring or “disc” may be used to describe the shutter disk assembly and components thereof, it is contemplated that the shape of the shutter disk assembly and these components need not be circular and may have a perimeter and/or opening of any shape, including but not limited to, rectangles, polygons, ovals, and the like.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201380073717.2A CN105074867B (en) | 2013-01-16 | 2013-12-17 | Finned Baffle Disks for Substrate Processing Chambers |
| JP2015553732A JP6250704B2 (en) | 2013-01-16 | 2013-12-17 | Finned shutter disk for substrate process chamber |
| SG11201505373QA SG11201505373QA (en) | 2013-01-16 | 2013-12-17 | Finned shutter disk for a substrate process chamber |
| KR1020157021940A KR101724269B1 (en) | 2013-01-16 | 2013-12-17 | Finned shutter disk for a substrate process chamber |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/742,692 US9147558B2 (en) | 2013-01-16 | 2013-01-16 | Finned shutter disk for a substrate process chamber |
| US13/742,692 | 2013-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2014113168A1 true WO2014113168A1 (en) | 2014-07-24 |
Family
ID=51164284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2013/075570 Ceased WO2014113168A1 (en) | 2013-01-16 | 2013-12-17 | Finned shutter disk for a substrate process chamber |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9147558B2 (en) |
| JP (1) | JP6250704B2 (en) |
| KR (1) | KR101724269B1 (en) |
| CN (2) | CN105074867B (en) |
| SG (1) | SG11201505373QA (en) |
| TW (1) | TWI563584B (en) |
| WO (1) | WO2014113168A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9147558B2 (en) * | 2013-01-16 | 2015-09-29 | Applied Materials, Inc. | Finned shutter disk for a substrate process chamber |
| US9564348B2 (en) | 2013-03-15 | 2017-02-07 | Applied Materials, Inc. | Shutter blade and robot blade with CTE compensation |
| US10851453B2 (en) | 2018-04-11 | 2020-12-01 | Applied Materials, Inc. | Methods and apparatus for shutter disk assembly detection |
| JP7404268B2 (en) * | 2018-04-18 | 2023-12-25 | アプライド マテリアルズ インコーポレイテッド | Two-piece shutter disc assembly with self-centering features |
| US12191127B2 (en) * | 2018-10-31 | 2025-01-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus for physical vapor deposition and method for forming a layer |
| US12100577B2 (en) * | 2019-08-28 | 2024-09-24 | Applied Materials, Inc. | High conductance inner shield for process chamber |
| US11171017B2 (en) | 2019-09-06 | 2021-11-09 | Applied Materials, Inc. | Shutter disk |
| US11827970B2 (en) * | 2021-07-22 | 2023-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Shutter disc for a semiconductor processing tool |
| US20240093355A1 (en) * | 2022-09-21 | 2024-03-21 | Applied Materials, Inc. | Glassy Carbon Shutter Disk For Physical Vapor Deposition (PVD) Chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020166762A1 (en) * | 2001-01-05 | 2002-11-14 | Hixson Robert B. | Physical vapor deposition apparatus with modified shutter disk and cover ring |
| KR20040059871A (en) * | 2002-12-30 | 2004-07-06 | 동부전자 주식회사 | Shutter plate of a sputtering apparatus |
| US20040182698A1 (en) * | 2002-02-20 | 2004-09-23 | Applied Materials, Inc. | Shutter disk and blade for physical vapor deposition chamber |
| US20100059181A1 (en) * | 2008-09-10 | 2010-03-11 | Changhun Lee | Low sloped edge ring for plasma processing chamber |
| WO2010033904A2 (en) * | 2008-09-22 | 2010-03-25 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0715144B2 (en) * | 1985-08-08 | 1995-02-22 | 松下電器産業株式会社 | Sputtering target material |
| JP3914287B2 (en) * | 1996-09-12 | 2007-05-16 | アプライド マテリアルズ インコーポレイテッド | Sputtering apparatus and collimator deposit processing method |
| JP3905584B2 (en) * | 1996-10-07 | 2007-04-18 | アプライド マテリアルズ インコーポレイテッド | Sputtering apparatus and collimator deposit processing method |
| JP2003027225A (en) * | 2001-07-13 | 2003-01-29 | Canon Inc | Sputtering target and sputtering device |
| US6908035B2 (en) * | 2003-03-18 | 2005-06-21 | Eastman Kodak Company | Optical security system |
| JP4376637B2 (en) * | 2004-01-14 | 2009-12-02 | Hoya株式会社 | Sputtering target and mask blank manufacturing method using the same |
| US20100089315A1 (en) * | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
| US9752228B2 (en) * | 2009-04-03 | 2017-09-05 | Applied Materials, Inc. | Sputtering target for PVD chamber |
| JP5480290B2 (en) * | 2009-12-04 | 2014-04-23 | キヤノンアネルバ株式会社 | Sputtering apparatus and electronic device manufacturing method |
| WO2011103693A1 (en) * | 2010-02-23 | 2011-09-01 | Oc Oerlikon Balzers Ag | Target shaping |
| CN102586744B (en) * | 2011-12-30 | 2014-05-07 | 余姚康富特电子材料有限公司 | Target blank and forming method thereof |
| US9147558B2 (en) * | 2013-01-16 | 2015-09-29 | Applied Materials, Inc. | Finned shutter disk for a substrate process chamber |
-
2013
- 2013-01-16 US US13/742,692 patent/US9147558B2/en active Active
- 2013-12-17 KR KR1020157021940A patent/KR101724269B1/en active Active
- 2013-12-17 SG SG11201505373QA patent/SG11201505373QA/en unknown
- 2013-12-17 CN CN201380073717.2A patent/CN105074867B/en active Active
- 2013-12-17 CN CN201811141799.0A patent/CN109599319B/en active Active
- 2013-12-17 JP JP2015553732A patent/JP6250704B2/en active Active
- 2013-12-17 WO PCT/US2013/075570 patent/WO2014113168A1/en not_active Ceased
- 2013-12-20 TW TW102147558A patent/TWI563584B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020166762A1 (en) * | 2001-01-05 | 2002-11-14 | Hixson Robert B. | Physical vapor deposition apparatus with modified shutter disk and cover ring |
| US20040182698A1 (en) * | 2002-02-20 | 2004-09-23 | Applied Materials, Inc. | Shutter disk and blade for physical vapor deposition chamber |
| KR20040059871A (en) * | 2002-12-30 | 2004-07-06 | 동부전자 주식회사 | Shutter plate of a sputtering apparatus |
| US20100059181A1 (en) * | 2008-09-10 | 2010-03-11 | Changhun Lee | Low sloped edge ring for plasma processing chamber |
| WO2010033904A2 (en) * | 2008-09-22 | 2010-03-25 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| US9147558B2 (en) | 2015-09-29 |
| KR101724269B1 (en) | 2017-04-07 |
| CN105074867B (en) | 2018-11-30 |
| US20140196848A1 (en) | 2014-07-17 |
| TW201432837A (en) | 2014-08-16 |
| CN109599319A (en) | 2019-04-09 |
| SG11201505373QA (en) | 2015-08-28 |
| JP6250704B2 (en) | 2017-12-20 |
| TWI563584B (en) | 2016-12-21 |
| JP2016509131A (en) | 2016-03-24 |
| KR20150106953A (en) | 2015-09-22 |
| CN105074867A (en) | 2015-11-18 |
| CN109599319B (en) | 2021-03-30 |
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