JPH0715144B2 - Sputtering target material - Google Patents
Sputtering target materialInfo
- Publication number
- JPH0715144B2 JPH0715144B2 JP60174519A JP17451985A JPH0715144B2 JP H0715144 B2 JPH0715144 B2 JP H0715144B2 JP 60174519 A JP60174519 A JP 60174519A JP 17451985 A JP17451985 A JP 17451985A JP H0715144 B2 JPH0715144 B2 JP H0715144B2
- Authority
- JP
- Japan
- Prior art keywords
- target material
- sputtering target
- substrate
- sputtered
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Magnetic Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はイオン衝突等を利用した薄膜製造装置の蒸発源
として利用されるスパッタリングターゲット材に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target material used as an evaporation source of a thin film manufacturing apparatus utilizing ion collision or the like.
従来の技術 従来から、超LSIや磁気記録媒体、薄膜ヘッド等の薄膜
作製にはスパッタリング法が用いられ、その蒸発源であ
るスパッタリングターゲット材は円板形や角型などの形
状を有したものが市販されている。これらのスパッタリ
ングターゲット材は被スパッタリング面が平面であり、
基板上に成膜を行った場合膜厚に分布を持っていた。
（例えば「ハンドブック オブ スィン フィルム テ
クノロジー」（L.I。Maiseel,R.Glanged“Handbook of
Thin Film Technologe",（1970年）,McGrawHill,P.1-5
7）） 近年、大面積の基板上に均一な膜厚を有する膜を作製す
る場合、ターゲット材に対する基板の運動や、膜厚分布
の補正用のマスクを用いる等の方法により膜厚分布補正
を行っていた。2. Description of the Related Art Conventionally, a sputtering method has been used for forming a thin film of a ULSI, a magnetic recording medium, a thin film head, etc., and a sputtering target material that is an evaporation source thereof has a disk shape, a square shape, or the like. It is commercially available. These sputtering target materials have a flat surface to be sputtered,
When the film was formed on the substrate, the film thickness had a distribution.
(For example, “Handbook of Thin Film Technology” (LI. Maiseel, R. Granged “Handbook of
Thin Film Technologe ", (1970), McGrawHill, P.1-5
7)) In recent years, when a film having a uniform film thickness is formed on a large-area substrate, the film thickness distribution can be corrected by a method such as movement of the substrate with respect to the target material or using a mask for correcting the film thickness distribution. I was going.
発明が解決しようとする問題点 しかしながら、基板の運動の方法では、駆動部の磨滅に
伴う塵埃の発生、マスクを用いた方法では、マスク上に
付着した膜の剥離などのために、作製した膜中にピンホ
ール等の欠陥が生じるという問題点を有していた。Problems to be Solved by the Invention However, in the method of moving the substrate, dust is generated due to abrasion of the driving unit, and in the method using the mask, the film formed is peeled off due to peeling of the film attached to the mask. There was a problem that defects such as pinholes occurred inside.
そこで、膜厚分布を均一にし、しかも作製した膜中に欠
陥が生じない薄膜の作製法の開発が望まれていた。Therefore, it has been desired to develop a method for producing a thin film that has a uniform film thickness distribution and does not cause defects in the produced film.
本発明は上記従来技術に鑑みてなされたもので、欠陥の
発生が無く、しかも膜厚分布の均一性が良好な膜を作る
ことができるスパッタリングターゲット材を提供するも
のである。The present invention has been made in view of the above-mentioned prior art, and provides a sputtering target material capable of forming a film without causing defects and having good film thickness distribution uniformity.
問題点を解決するための手段 この目的を達成するために、本発明のスパッタリングタ
ーゲット材は、その被スパッタリング面が例えば凸部平
面、凹部平面及び斜面等を有するもので、内周から外周
に向かって肉厚が連続的に変化する構成となっている。Means for Solving the Problems In order to achieve this object, the sputtering target material of the present invention is such that the surface to be sputtered has, for example, a convex flat surface, a concave flat surface, and a sloped surface, and the like. The thickness of the wall changes continuously.
作用 本発明は、被スパッタ粒子が余弦則に従った角度分布を
持ってスパッタリングターゲット材の被スパッタ面から
射出される特性を見いだし、この特性に着目して、基板
上の膜厚が薄くなる部分に多くの粒子が付着するように
斜面部の傾き角と面積を設定することにより、基板上に
付着する膜の膜厚分布の均一性を向上させたものであ
る。Action The present invention finds out a characteristic that sputtered particles have an angular distribution according to the cosine law and is ejected from the sputtered surface of a sputtering target material, and paying attention to this characteristic, the portion where the film thickness on the substrate becomes thin By setting the inclination angle and area of the slope so that many particles adhere to the substrate, the uniformity of the film thickness distribution of the film deposited on the substrate is improved.
余弦則に従った角度分布とは、スパッタリングターゲッ
ト材の表面において、被スパッタ粒子が射出する起点の
面の法線に対する、被スパッタ粒子の射出する方向の角
度の余弦値に、概略比例した量の被スパッタ粒子が射出
することを表している。The angle distribution according to the cosine law means that, on the surface of the sputtering target material, the cosine value of the angle of the direction in which the sputtered particles are emitted with respect to the normal to the surface of the starting point from which the sputtered particles are emitted This means that sputtered particles are ejected.
従って、形状が円板状であり、内周から外周に向かって
肉厚が連続的に変化するスパッタリングターゲット材に
おいて、スパッタリングターゲット材の被スパッタリン
グ面に対面して設置した基板上の任意の点と前記スパッ
タリングターゲット材の中心とを結ぶ直線が前記被スパ
ッタリング面に対してつくる入射面が、前記被スパッタ
リング面に対してつくる交線上の各点と前記基板上の点
とを結ぶ直線と、前記交線上の各点の法線とがなす角の
余弦値の和が、前記基板上の任意の点に対して概略等し
いというスパッタリング材の表面形状を達成することに
より、基板上に付着する膜の膜厚分布の均一性が向上す
る。Therefore, in the shape of a disk, in the sputtering target material whose wall thickness continuously changes from the inner circumference to the outer circumference, at an arbitrary point on the substrate placed facing the surface to be sputtered of the sputtering target material, The incident surface formed by the straight line connecting the center of the sputtering target material with respect to the surface to be sputtered, the straight line connecting each point on the line of intersection formed with the surface to be sputtered and the point on the substrate, A film of a film deposited on the substrate by achieving a surface shape of the sputtering material in which the sum of the cosine values of the angles formed by the normals of the points on the line is approximately equal to any point on the substrate. Uniformity of thickness distribution is improved.
実施例 以下、本発明の一実施例について、図面を参照しながら
説明する。第１図は本発明の第１の実施例におけるスパ
ッタリングターゲット材の要部断面斜視図である。Embodiment One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional perspective view of a main part of a sputtering target material according to the first embodiment of the present invention.
第１図において、１は、被スパッタ粒子が余弦則に従っ
た角度分布を持って被スパッタ面から射出されるように
した表面形状を持ち、中心から一定長の位置、即ち複数
の半径位置の肉厚が等しいAlターゲット材、２は裏板で
ある。In FIG. 1, reference numeral 1 denotes a surface shape in which particles to be sputtered are ejected from a surface to be sputtered with an angular distribution according to the cosine law, and a position of a constant length from the center, that is, a plurality of radial positions. An Al target material having the same wall thickness and 2 are back plates.
このスパッタリングターゲット材を平行円板電極構造を
有するスパッタリング装置に組み込み、基板運動やマス
ク設置を行わずに薄膜作成を行った。ターゲットサイズ
はφ６インチであり、従来の平面状の被ターゲット面を
有するターゲット材に比べると、０〜φ140mmまでの膜
厚分布が±20％から±８％に向上した。This sputtering target material was incorporated into a sputtering apparatus having a parallel disk electrode structure, and a thin film was formed without moving the substrate or setting a mask. The target size is φ6 inch, and the film thickness distribution from 0 to φ140 mm is improved from ± 20% to ± 8% as compared with the conventional target material having a flat target surface.
第２図は基板の半径方向の膜厚変化の様子を示したもの
である。第２図において、ａは本発明の一実施例におけ
るスパッタリングターゲット材を用いた場合の膜厚分
布、ｂは従来のスパッタリングターゲット材を用いた場
合の膜厚分布である。FIG. 2 shows how the film thickness of the substrate changes in the radial direction. In FIG. 2, a is the film thickness distribution when the sputtering target material in one embodiment of the present invention is used, and b is the film thickness distribution when the conventional sputtering target material is used.
以上のように本実施例によれば、スパッタリングターゲ
ット材の被スパッタリング面を凹凸及び斜面で形成する
ことにより、膜厚分布の均一性を向上することができ
る。また、基板運動やマスク設置は行わずに成膜できる
ため、膜中の欠陥を増加させる要因も除去できる。As described above, according to the present embodiment, it is possible to improve the uniformity of the film thickness distribution by forming the sputtering target surface of the sputtering target material with unevenness and slopes. Further, since the film formation can be performed without performing the substrate movement and the mask installation, the factor that increases the defects in the film can be removed.
以下、本発明の第２の実施例について図面を参照しなが
ら説明する。第３図は本発明の第２の実施例におけるス
パッタリングターゲット材の要部断面斜視図である。Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a perspective view of a main portion of a sputtering target material according to the second embodiment of the present invention.
第３図において、３は、被スパッタ粒子が余弦則に従っ
た角度分布を持って被スパッタ面から射出されるように
した表面形状を持ち、肉厚が略五角形の回転体で形成さ
れた回転対称な円板形状のTbFeからなる合金ターゲット
材、４は裏板である。合金ターゲット材３の断面の被ス
パッタ面にある頂点はターゲット材の中心から半径方向
に21mmに位置している。本実施例では本発明の第１の実
施例と同様の手順で薄膜作製を行った。第４図は基板の
半径方向の膜厚変化の様子を示したものである。第４図
においてｂは従来のスパッタリングターゲット材を用い
た場合の膜厚分布、ｃは本発明の第２の実施例のスパッ
タリングターゲット材を用いた場合の膜厚分布である。
基板径が０〜φ140mmまでの膜厚分布が±20％から±11
％に向上した。In FIG. 3, reference numeral 3 denotes a rotating member having a surface shape in which sputtered particles are ejected from the sputtered surface with an angular distribution according to the cosine law, and is formed by a rotor having a substantially pentagonal thickness. An alloy target material 4 made of TbFe having a symmetrical disk shape is a back plate. The apex of the cross section of the alloy target material 3 on the sputtered surface is located 21 mm in the radial direction from the center of the target material. In this example, a thin film was formed by the same procedure as in the first example of the present invention. FIG. 4 shows how the film thickness of the substrate changes in the radial direction. In FIG. 4, b is the film thickness distribution when the conventional sputtering target material is used, and c is the film thickness distribution when the sputtering target material of the second embodiment of the present invention is used.
Film thickness distribution from substrate diameter 0 to φ140mm is ± 20% to ± 11
Improved to%.
また、第５図は光磁気記録媒体TbFeの保磁力の基板の半
径方向の分布である。第５図において、ｅは本発明の第
２の実施例のスパッタリングターゲット材を用いた場合
の保磁力分布、ｆは従来のスパッタリングターゲットを
用いた場合の保磁力分布である。基板径が０〜φ140mm
の範囲で、従来保磁力2KOe〜7KOeまで分布を持っていた
ものが、3KOe〜5KOeの分布におさえることができた。こ
れは膜中のTbとFeの組成比の分布の均一性を良くしたこ
とに他ならない。Further, FIG. 5 shows the distribution of the coercive force of the magneto-optical recording medium TbFe in the radial direction of the substrate. In FIG. 5, e is the coercive force distribution when the sputtering target material of the second embodiment of the present invention is used, and f is the coercive force distribution when the conventional sputtering target is used. Substrate diameter is 0 to φ140 mm
In the range of, the conventional coercive force distribution of 2 KOe to 7 KOe could be suppressed to the distribution of 3 KOe to 5 KOe. This is nothing but improving the uniformity of the distribution of the composition ratio of Tb and Fe in the film.
以上のように本実施例によれば、膜厚分布の均一性のみ
ならず組成分布の均一性も向上することができる。As described above, according to this embodiment, not only the uniformity of the film thickness distribution but also the uniformity of the composition distribution can be improved.
なお、本実施例ではスパッタリングターゲット材をAlお
よびTbFeとしたが、スパッタリングターゲット材はTi,C
r,Fe,Co,Ni,Cu,Ag,Au等の単金属、あるいはTiW,NiCr,Co
Cr,TbFeCo,GdTbFe等の合金、SiO2，Si3N4TiN,ZnS,SiC,T
iC等の化合物でもよい。In this example, the sputtering target materials were Al and TbFe, but the sputtering target materials were Ti and C.
Single metal such as r, Fe, Co, Ni, Cu, Ag, Au, or TiW, NiCr, Co
Alloys such as Cr, TbFeCo, GdTbFe, SiO 2 , Si 3 N 4 TiN, ZnS, SiC, T
A compound such as iC may be used.
発明の効果 本発明は、スパッタリングターゲット材の被スパッタリ
ング面に、スパッタリングターゲット材の被スパッタリ
ング面に対面して設置した基板上の任意の点と前記スパ
ッタリングターゲット材の中心とを結ぶ直線が前記被ス
パッタリング面に対してつくる入射面が、前記被スパッ
タリング面に対してつくる交線上の各点と、前記基板上
の任意の点とを結ぶ直線と、前記交線上の各点の法線と
がなす角の余弦値の和が、前記基板上の任意の点に対し
て概略等しくなる形状に、例えば凸部平面、凹部平面及
び斜面等を設け、内周から外周に向かって肉厚が連続的
に変化するように形成することにより、作製した膜の膜
厚分布を均一にすることができ、さらに化合物膜の作製
の場合、組成分布も均一にするという効果を得、さらに
基板運動及びマスク設置を行わないため膜中の欠陥発生
を防止できるという優れたスパッタリングターゲット材
を実現できるものである。EFFECTS OF THE INVENTION The present invention provides that, on the surface to be sputtered of a sputtering target material, a straight line connecting an arbitrary point on the substrate installed facing the surface to be sputtered of the sputtering target material and the center of the sputtering target material is the material to be sputtered. An incident surface formed with respect to the surface, an angle formed by a straight line connecting each point on the line of intersection formed with the surface to be sputtered and an arbitrary point on the substrate, and a normal line of each point on the line of intersection. The sum of the cosine values of the is substantially equal to any point on the substrate, for example, a convex plane, a concave plane, and a slope are provided, and the wall thickness changes continuously from the inner circumference to the outer circumference. By forming the film in such a manner that the film thickness distribution of the formed film can be made uniform, and in the case of the compound film formation, the effect that the composition distribution is also made uniform can be obtained. It is possible to realize an excellent sputtering target material that can prevent the occurrence of defects in the film because movement and mask installation are not performed.
第１図は本発明の第１の実施例におけるスパッタリング
ターゲット材の要部断面斜視図、第２図は本発明の第１
の実施例における膜厚の基板半径方向の分布を示す特性
図、第３図は本発明の第２の実施例におけるスパッタリ
ングターゲット材の要部断面斜視図、第４図は本発明の
第２の実施例における膜厚の基板半径方向の分布を示す
特性図、第５図は本発明の第２の実施例における保磁力
の基板半径方向の分布を示す特性図である。 １……Alターゲット材、2,4……裏板、３……TbFeター
ゲット材。FIG. 1 is a sectional perspective view of an essential part of a sputtering target material in a first embodiment of the present invention, and FIG. 2 is a first embodiment of the present invention.
3 is a characteristic view showing the distribution of the film thickness in the radial direction of the substrate in the embodiment of FIG. 3, FIG. 3 is a cross-sectional perspective view of the main part of the sputtering target material in the second embodiment of the invention, and FIG. FIG. 5 is a characteristic diagram showing the distribution of the film thickness in the radial direction of the substrate in the example, and FIG. 5 is a characteristic diagram showing the distribution of the coercive force in the radial direction of the substrate in the second example of the present invention. 1 …… Al target material, 2,4 …… Back plate, 3 …… TbFe target material.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01L 21/31
Claims (3)
って肉厚が連続的に変化するスパッタリングターゲット
材であって、 前記スパッタリングターゲット材の被スパッタリング面
に対面して設置した基板上の任意の点と前記スパッタリ
ングターゲット材の中心とを結ぶ直線が前記被スパッタ
リング面に対してつくる入射面が、前記被スパッタリン
グ面に対してつくる交線上の各点と前記基板上の任意の
点とを結ぶ直線と、前記交線上の各点の法線とがなす角
の余弦値の和が、前記基板上の任意の点に対して概略等
しいことを特徴とするスパッタリングターゲット材。1. A sputtering target material having a disk-like shape, the thickness of which continuously changes from the inner circumference to the outer circumference, wherein the substrate is placed facing the surface to be sputtered of the sputtering target material. An incident surface formed by the straight line connecting the arbitrary point above and the center of the sputtering target material with respect to the surface to be sputtered, each point on the line of intersection formed with the surface to be sputtered and any point on the substrate A sputtering target material, characterized in that the sum of the cosine values of the angle formed by the straight line connecting to and the normal line of each point on the intersection line is approximately equal to any point on the substrate.
なる特許請求の範囲第１項記載のスパッタリングターゲ
ット材。2. The sputtering target material according to claim 1, wherein the thickness is formed to be equal at an arbitrary radial position.
対称な形状を持つ特許請求の範囲第１項記載のスパッタ
リングターゲット材。3. The sputtering target material according to claim 1, which has a rotationally symmetric shape formed by a rotating body having a substantially pentagonal wall thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60174519A JPH0715144B2 (en) | 1985-08-08 | 1985-08-08 | Sputtering target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60174519A JPH0715144B2 (en) | 1985-08-08 | 1985-08-08 | Sputtering target material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6237369A JPS6237369A (en) | 1987-02-18 |
| JPH0715144B2 true JPH0715144B2 (en) | 1995-02-22 |
Family
ID=15979937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60174519A Expired - Lifetime JPH0715144B2 (en) | 1985-08-08 | 1985-08-08 | Sputtering target material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715144B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6086735A (en) * | 1998-06-01 | 2000-07-11 | Praxair S.T. Technology, Inc. | Contoured sputtering target |
| KR20010050590A (en) * | 1999-09-23 | 2001-06-15 | 로버트 에이. 바쎄트 | Extended life sputter targets |
| CN102230158B (en) | 2004-11-17 | 2014-04-30 | Jx日矿日石金属株式会社 | Sputtering target, sputtering target backing plate assembly and film deposition system |
| US9611537B2 (en) * | 2010-02-23 | 2017-04-04 | Evatec Ag | Target shaping |
| US9147558B2 (en) * | 2013-01-16 | 2015-09-29 | Applied Materials, Inc. | Finned shutter disk for a substrate process chamber |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4981285A (en) * | 1972-12-13 | 1974-08-06 | ||
| JPS5247308A (en) * | 1975-10-13 | 1977-04-15 | Japan Radio Co Ltd | Signal detection circuit |
-
1985
- 1985-08-08 JP JP60174519A patent/JPH0715144B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237369A (en) | 1987-02-18 |
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