JPS6286159A - Target material for sputtering - Google Patents

Target material for sputtering

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Publication number
JPS6286159A
JPS6286159A JP60228042A JP22804285A JPS6286159A JP S6286159 A JPS6286159 A JP S6286159A JP 60228042 A JP60228042 A JP 60228042A JP 22804285 A JP22804285 A JP 22804285A JP S6286159 A JPS6286159 A JP S6286159A
Authority
JP
Japan
Prior art keywords
target material
sputtering target
alloy
composition
tbfeco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60228042A
Other languages
Japanese (ja)
Inventor
Kiyoshi Uchida
清 内田
Hideji Kawabata
川端　秀次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60228042A priority Critical patent/JPS6286159A/en
Publication of JPS6286159A publication Critical patent/JPS6286159A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To uniformize the composition distribution of a vapor-deposited thin alloy film by changing the ratio between the constituents of an alloy forming a discoid target material for sputtering in the radial direction. CONSTITUTION:This target material 1 for sputtering is discoid and is made of an alloy of a rare earth element such as Tb or Gd with a transition element such as Fe. The ratio between the elements is changed in the radial direction so that the rare earth element having larger atomic weight is deposited on the central and peripheral parts of a substrate by a smaller amount.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はイオン衝突等を利用した薄膜製造装置の蒸発源
として利用されるスパッタリングターゲット材及び光磁
気記録媒体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sputtering target material used as an evaporation source in a thin film manufacturing apparatus using ion bombardment, etc., and a method for manufacturing a magneto-optical recording medium.

従来の技術 従来から、超ＬＳＩや磁気記録媒体、薄膜ヘッド等の薄
膜作製にはスパッタリング法が用いられてきた。その蒸
発源であるスパッタリングターゲット材は、Ｃｕ、Ｃｒ
、Ｓｉ等の単体元素で構成されるスパッタリングターゲ
ット材やＳｉＯっやＳｉ、Ｎ。BACKGROUND ART Conventionally, sputtering methods have been used to fabricate thin films for VLSIs, magnetic recording media, thin film heads, and the like. The sputtering target material that is the evaporation source is Cu, Cr.
, sputtering target materials composed of simple elements such as Si, SiO, Si, and N.

に代表される酸化物や窒化物等のスパッタリングターゲ
、／）材が市販され実用化されている。近年高密度の垂
直記録用あるいは書換え可能光磁気ディスクの記録媒体
用としてＣｏＣｒ、ＴｂＦｅ、ＴｂＦｅＣ。Sputtering target materials such as oxides and nitrides represented by /) are commercially available and are in practical use. In recent years, CoCr, TbFe, and TbFeC have been used as recording media for high-density perpendicular recording or rewritable magneto-optical disks.

等の合金スパッタリングターゲット材の作製が可能とな
り６イ／チφ、８イ／チφといった大面積ターゲツト材
の作製ができるようになってきた。It has become possible to produce alloy sputtering target materials such as 6 I/inch φ, 8 I/inch φ, and other large-area target materials.

発明が解決しようとする問題点 これらの合金スパッタリングターゲット材にイオン衝突
を行って薄膜作製した場合、ＴｂＦｅ　。Problems to be Solved by the Invention When these alloy sputtering target materials are subjected to ion bombardment to produce a thin film, TbFe.

ＴｂＦｅＣｏ　など原子量の大きさに差がある元素が互
いに合金化されている場合、原子量の小さい元素が原子
量の大きい元素に比べてスパッタリングターゲット材上
のイオン衝突面に対して垂直方向に飛び易く、必ずしも
スパッタリングターゲット材の組成が作製された膜の組
成と一致するわけではない（例えば「ジェイ　エービー
ヒー〃レフィジイックスＪ　（Ｒ，Ｒ，０１ｓｏｎ　ｅ
ｔ　ａｎ、　Ｊ、Ａｐｐｌ、Ｐｈｙｓ、５０（５）　、
　Ｍａｙ　１９γｃａ　　Ｉ）Ｉ）３６７７〜３８８３
　）　）。When elements with different atomic weights, such as TbFeCo, are alloyed with each other, elements with smaller atomic weights are more likely to fly perpendicular to the ion collision surface on the sputtering target material than elements with larger atomic weights, and this is not always the case. The composition of the sputtering target material does not necessarily match the composition of the produced film (for example, "J.A.B. Ref.
Tan, J. Appl, Phys, 50(5),
May 19γca I) I) 3677-3883
) ).

この状況と図面を用いて説明する。第６図はマグネｌ−
ロンスパッタ装置のカソード電極の概略斜視図である。This situation will be explained using this situation and drawings. Figure 6 shows the magnet l-
FIG. 2 is a schematic perspective view of a cathode electrode of the Ron sputtering device.

第６図において、３は円板状のＴｂＦｅＣｏ合金スパッ
タリングターゲット材、４は角型ドーナツ状のＮ極磁石
、６は円柱状のＳ極磁石である。In FIG. 6, 3 is a disk-shaped TbFeCo alloy sputtering target material, 4 is a square donut-shaped north pole magnet, and 6 is a cylindrical south pole magnet.

組成の偏析が０．１ａｔ％以下の円板状ＴｂＦ　ｅＣ。Disc-shaped TbF eC with compositional segregation of 0.1 at% or less.

合金スパッタリングターゲット材を、第６図に示した構
成のカソード電極に組み込み、マグネトロン放電を行う
と、第６図中のＴｂＦｅＣｏ合金スパッタリングターゲ
ット材表面に斜線で示した領域がイオン衝突面となシ、
この表面からＴｂＦｅＣ。When the alloy sputtering target material is incorporated into the cathode electrode having the configuration shown in FIG. 6 and magnetron discharge is performed, the area indicated by diagonal lines on the surface of the TbFeCo alloy sputtering target material in FIG. 6 becomes an ion collision surface.
TbFeC from this surface.

がスパッタリング放出される。is emitted by sputtering.

ＴｂＦｅＣｏ合金スパッタリングターゲット材上に置い
た基板上に、前述のＴｂＦｅＣｏを付着させ、ＴｂＦｅ
Ｃｏ膜を作製した。The above-mentioned TbFeCo is deposited on the substrate placed on the TbFeCo alloy sputtering target material, and the TbFeCo is
A Co film was produced.

第７図に、作製したＴｂＦｅＣｏ膜のＴｂ組成分布を示
す。第７図において縦軸はＴｂの組成比、横軸は円板状
ＴｂＦｅＣｏ合金スパッタリングターゲット材の円板中
心軸と基板面との交点からの基板上の半径位置を示して
いる。FIG. 7 shows the Tb composition distribution of the produced TbFeCo film. In FIG. 7, the vertical axis shows the composition ratio of Tb, and the horizontal axis shows the radial position on the substrate from the intersection of the disk center axis of the disk-shaped TbFeCo alloy sputtering target material and the substrate surface.

第７図から明らかなように、基板上の径方向にＴｂ組成
比の分布が存在する。この分布は第６図に斜線で示した
イオン衝突面の領域が変わると変化する。As is clear from FIG. 7, there is a distribution of Tb composition ratio in the radial direction on the substrate. This distribution changes as the area of the ion collision surface shown by diagonal lines in FIG. 6 changes.

以上説明したように、均一な組成分布を有する合金薄膜
を作製する際には、均一な組成分布を有するスパッタリ
ングターゲット材ではその目的は達成されない。As explained above, when producing an alloy thin film having a uniform composition distribution, a sputtering target material having a uniform composition distribution cannot achieve the purpose.

特に、希土類遷移金属光磁気記録媒体を形成する場合、
記録消去条件あるいは記録信号の保存性を決定する保磁
力の大きさが、組成変化に敏感に依存するため、組成分
布を厳密に制御することが要求されていた。In particular, when forming a rare earth transition metal magneto-optical recording medium,
Since the magnitude of the coercive force, which determines the recording/erasing conditions or the storage stability of recorded signals, is sensitively dependent on changes in composition, it has been required to strictly control the composition distribution.

そこで、均一な組成分布を有する合金薄膜を作製する合
金スパッタリングターゲット材の開発が望まれていた。Therefore, it has been desired to develop an alloy sputtering target material that can produce an alloy thin film having a uniform composition distribution.

本発明は上記従来技術に鑑みてなされたもので、均一な
組成分布を有する合金薄膜を作製するスパッタリングタ
ーゲット材を提供するものである。The present invention has been made in view of the above-mentioned prior art, and provides a sputtering target material for producing an alloy thin film having a uniform composition distribution.

問題点を解決するだめの手段 この目的を達成するために、本発明のスパッタリングタ
ーゲット材は、円板形状を有し、円板の径方向に対して
組成比が変化し、かつ、ある半径位置での周方向の組成
が同一であるという構成である。Means for Solving the Problems In order to achieve this object, the sputtering target material of the present invention has a disc shape, the composition ratio changes in the radial direction of the disc, and The composition is the same in the circumferential direction.

作　　用 この構成によって、基板上の内周部及び外周部に付着す
るＴｂ　（すなわち原子量の大きな元素）が少なくなる
ようにスパッタリングターゲット材の組成を径方向に偏
析させることによシ組成分布が均一な合金薄膜が作製で
きることになる。Effect: With this configuration, the composition of the sputtering target material is segregated in the radial direction so that less Tb (that is, an element with a large atomic weight) adheres to the inner and outer circumferences of the substrate, resulting in a uniform composition distribution. This means that a thin alloy film can be produced.

実施例 以下、本発明の一実施例について、図面を参照しながら
説明する。第１図は本発明の第１の実施例におけるスパ
ッタリングターゲット材の要部断面斜視図である。第１
図において、１は均一な組成を有する角型ドーナツ形状
のＴｂＦｅＣｏ合金、２は裏板である。角型ドーナツ形
状のＴｂＦｅＣ。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1 is a sectional perspective view of a main part of a sputtering target material in a first embodiment of the present invention. 1st
In the figure, 1 is a square donut-shaped TbFeCo alloy having a uniform composition, and 2 is a back plate. Square donut-shaped TbFeC.

合金１は同心円上に密に配置され裏板２上に接着されて
いる。そして、それぞれＴｂ、Ｆｅ、Ｃｏの組酸比が異
なる。従来の組成偏析のないＴｂＦｅＣ。Alloy 1 is densely arranged concentrically and bonded onto back plate 2. The compositional acid ratios of Tb, Fe, and Co are different from each other. TbFeC without conventional composition segregation.

合金スパッタリングターゲット材を用いて薄膜作製を行
った時に、ＴｂＦθＣＯ薄膜のＴｂの組成分布が第３図
に示したようになる場合には、内周部及び外周部の角形
ドーナツ形状のＴｂＦｅＣｏ合金１のＴｂ組成比を少な
くする。When a thin film is fabricated using an alloy sputtering target material, if the Tb composition distribution of the TbFθCO thin film is as shown in FIG. Decrease the Tb composition ratio.

例えばＴｂＦｅＣｏ合金にて光磁気記録媒体を作製する
場合に利用するＴｂＦｅＣｏ合金スパッタリングターゲ
ット材は、第２図に示した組成分布を有するものがよい
。第２図において、縦軸はＴｂ組成、横軸は円形スパノ
タリングターゲ、７）材の半径方向の位置である。For example, a TbFeCo alloy sputtering target material used when producing a magneto-optical recording medium using a TbFeCo alloy preferably has a composition distribution as shown in FIG. In FIG. 2, the vertical axis is the Tb composition, the horizontal axis is the circular spanotaring target, and 7) the radial position of the material.

第２図に示したＴｂ組成分布を有するＴｂＦｅＣ。TbFeC having the Tb composition distribution shown in FIG.

合金スパッタリングターゲット材を用いて光磁気記録媒
体を作製した場合のＴｂｉ成分面分布３図に示す。Figure 3 shows the Tbi component surface distribution when a magneto-optical recording medium is manufactured using an alloy sputtering target material.

第３図において縦軸はＴｂ組成比、横軸は従来例の第７
図の横軸と同様な基板半径位置である。In Fig. 3, the vertical axis is the Tb composition ratio, and the horizontal axis is the Tb composition ratio of the conventional example.
This is the substrate radial position similar to the horizontal axis in the figure.

第３図より明らかなように、Ｔｂ組成分布がほぼ均一に
なっている。As is clear from FIG. 3, the Tb composition distribution is almost uniform.

以上のように本実施例によれば、Ｔｂ組成比の異なる角
形ドーナツ状のＴｂＦｅＣｏ合金を組み合わせたＴｂＦ
ｅＣｏ合金スパッタリングターゲット材を用いることに
よりＴｂ組成が均一な光磁気記録媒体ＴｂＦｅＣｏ薄膜
を作製することができる。As described above, according to this embodiment, TbF is a combination of square donut-shaped TbFeCo alloys having different Tb composition ratios.
By using an eCo alloy sputtering target material, a magneto-optical recording medium TbFeCo thin film having a uniform Tb composition can be produced.

以下本発明の他の実施例について説明する。Other embodiments of the present invention will be described below.

第４図は本発明の第２の実施例で使用した円板状Ｔｂ　
Ｆ　ｅ　Ｃｏ合金スパッタリングターゲット材のＴｂ組
成分布を示した図である。第４図において縦軸および横
軸は本発明の第１の実施例における第２図と同様である
。第４図に示したＴｂ組成分布を有するＴｂＦｅＣｏ合
金スパッタリングターゲット材は、本発明の第１の実施
例における角形ドーナツ形状ＴｂＦｅＣｏ合金を多数組
み合わせ、真空中加熱による熱拡散処理によって作製す
る。このＴｂＦｅＣｏ合金スパッタリングターゲ、）材
によシ作製した光磁気記録媒体Ｔｂ　Ｆ　ｅ　Ｃｏ合金
薄膜のＴｂ組成分布を第５図に示す。第６図において縦
軸及び横軸は本発明の第１の実施例における第３図と同
様である。第５図からＴｂ組成分布の均一性が非常に良
いことがわかる。Figure 4 shows the disc-shaped Tb used in the second embodiment of the present invention.
It is a figure showing Tb composition distribution of Fe Co alloy sputtering target material. In FIG. 4, the vertical and horizontal axes are the same as in FIG. 2 in the first embodiment of the present invention. The TbFeCo alloy sputtering target material having the Tb composition distribution shown in FIG. 4 is produced by combining a large number of square donut-shaped TbFeCo alloys according to the first embodiment of the present invention and performing a thermal diffusion treatment by heating in vacuum. FIG. 5 shows the Tb composition distribution of the magneto-optical recording medium Tb Fe Co alloy thin film produced using this TbFeCo alloy sputtering target material. In FIG. 6, the vertical and horizontal axes are the same as in FIG. 3 in the first embodiment of the present invention. It can be seen from FIG. 5 that the uniformity of the Tb composition distribution is very good.

以上のように、本実施例によればＴｂＦｅＣｏ合金スパ
ッタリングターゲット材の半径方向の組成変化を連続的
でなめらかＫすることにより、Ｔｂ組成の均一性が格段
に向上した光磁気記録媒体ＴｂＦｅＣｏ合金薄膜を作製
することができる。As described above, according to this example, by making the composition change in the radial direction of the TbFeCo alloy sputtering target material continuous and smooth, a magneto-optical recording medium TbFeCo alloy thin film with significantly improved Tb composition uniformity can be produced. It can be made.

なお、本実施例ではスパソタリングターゲ７）材をＴｂ
ＦｅＣｏ合金としたが、スパッタリングターゲット材の
材質は原子量の差が大きい異種金属で構成された合金金
てに適応でき、例えば他の希土類遷移金属合金のＧｄＴ
ｂＦｅ合金やＧｄＴｂＦｅＣ。In addition, in this example, the spa sotering target 7) material is Tb
Although the FeCo alloy was used, the sputtering target material can be applied to alloys composed of different metals with large differences in atomic weight, such as GdT of other rare earth transition metal alloys.
bFe alloy and GdTbFeC.

あるいはＧｄＴｂＤｙＦｅＣｏでもよく、またこれらの
合金にＣｒ　、Ｓｎ、Ｂｉ　、Ｔｉ　、Ｃｕ、Ｚｒ　、
Ｓｔ　、Ｇｅの少くとも一種類の元素を添加した合金で
も同様の効果が得られる。さらにＡｕＣｒ＋ＡｕＣｕ等
の電極材料用スパッタリングターゲット材やＣｏＣｒ、
ＣｏＮｉ等の垂直磁気記録用のスパッタリングターゲッ
ト材でも同様な効果が得られるものである。Alternatively, GdTbDyFeCo may be used, and these alloys may also contain Cr, Sn, Bi, Ti, Cu, Zr,
A similar effect can be obtained with an alloy to which at least one element of St and Ge is added. In addition, sputtering target materials for electrode materials such as AuCr+AuCu, CoCr,
A similar effect can be obtained with a sputtering target material for perpendicular magnetic recording such as CoNi.

まだ、本実施例ではＴｂｍ成を均一にするスパッタリン
グターゲット材としたが、任意の組成分布を持つ薄膜も
本発明による構成によって実現できることは明らかであ
る。In this example, a sputtering target material with a uniform Tbm composition was used, but it is clear that a thin film having an arbitrary composition distribution can be realized by the configuration according to the present invention.

尚、光学的特注を満足するためには、以下の各場合の各
組成比は次に示す範囲のものが望ましい。In order to satisfy the optical customization requirements, the composition ratios in each of the following cases are preferably within the ranges shown below.

即ち、Ｋ−Ｆｅ及びＴｂ、Ｇｄを主成分元素とし、Ｔｂ
とＧｄを合わせた組成比は１６〜３０　ａ　を係、Ｔｂ
及びＦｅ、Ｃｏを主成分元素とし、Ｔｂの組成比が１Ｏ
−４０ａｔ％、Ｇｄ、Ｔｂ及びＦｅ、Ｃｏを主成分元素
とし、ＴｂとＧｄを合わせた組成比が１０〜５０　ａ　
ｔ％の範囲内にあるものが良い。That is, K-Fe, Tb, and Gd are the main component elements, and Tb
The combined composition ratio of Gd and Gd is 16 to 30 a, and Tb
and Fe, Co as main component elements, and the composition ratio of Tb is 1O
-40 at%, main component elements are Gd, Tb, Fe, and Co, and the combined composition ratio of Tb and Gd is 10 to 50 a
It is preferable that the content be within the range of t%.

さらに、Ｇｄ、Ｔｂ、Ｄｙの希土類金属の少くとも一種
類と、Ｆｅ、Ｃｏの遷移金属の少くとも一種類を含む希
土類・遷移金属合金にＣｒ、Ｓｎ、Ｂｉ、Ｔｉ。Further, rare earth/transition metal alloys containing at least one kind of rare earth metals such as Gd, Tb, and Dy and at least one kind of transition metals such as Fe and Co include Cr, Sn, Bi, and Ti.

Ｃｕ、Ｚｒ、Ｓｔ、Ｇｅの少くとも一種類を０〜２０ａ
ｔ％添加したものも良い。At least one type of Cu, Zr, St, Ge, 0 to 20a
It is also good to add t%.

発明の効果 本発明は円板状合金スパッタリングターゲット材の合金
組成比を半径方向に変化させることにより、組成分布が
均一な合金薄膜を得ることができ、また任意の組成分布
を有する合金薄膜も得ることができるという潰れたスパ
ッタリングターゲット材を実現できるものである。また
、本発明による構成のスパッタリングターゲット材を用
いることにより、均一な組成分布を有する光磁気記録媒
体を作製することができる優れた光磁気記録媒体の製造
方法を実現するものである。Effects of the Invention The present invention makes it possible to obtain an alloy thin film with a uniform composition distribution by changing the alloy composition ratio of a disc-shaped alloy sputtering target material in the radial direction, and also to obtain an alloy thin film having an arbitrary composition distribution. It is possible to realize a crushed sputtering target material that can be used. Furthermore, by using the sputtering target material having the structure according to the present invention, an excellent method for manufacturing a magneto-optical recording medium is realized, which allows production of a magneto-optical recording medium having a uniform composition distribution.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例におけるスパッタリングター
ゲット材の要部断面斜視図、第２図は同ＴｂＦｅＣｏ合
金スパッタリングターゲット材のＴｂ組成分布図、第３
図は同Ｔｂ　Ｆｅ　Ｃｏ合金スパッタリングターゲット
材にで作製したＴｂＦｅＣｏ膜のＴｂＭｉ成分布成分用
図図は同第２の実施例におけるＴｂＦｅＣｏ合金スパッ
タリングターゲット材のＴｂ組成分布図、第５図は同第
２の実施例におけるＴｂＦｅＣｏ合金スパッタリングタ
ーゲット材にて作製したＴｂ　Ｆ　ｅ　Ｃｏ膜のＴｂ組
成分布図、第６図はマグネトロンスパッタ装置のカンー
ド電極の概略斜視図、第７図は従来のＴｂＦｅＣｏ合金
スパッタリングターゲット材にて作製したＴｂＦｅＣ。 膜のＴｂ組成分布図である。 １・・・・ＴｂＦｅＣｏ合金、２・・・・裏板、３・・
・・・ＴｂＦｅＣｏ合金スパノタリングターゲ、／）材
、４・・・・Ｎ極磁石、５・・・・・Ｓ極磁石。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第４
図 タープしトオイ午倒ケ１□ 第５図 羞１又十径泣、ｊし　− 第６図 第７図 基叛ｆ−壬位ｌ□FIG. 1 is a cross-sectional perspective view of a main part of a sputtering target material according to an embodiment of the present invention, FIG. 2 is a Tb composition distribution diagram of the same TbFeCo alloy sputtering target material, and FIG.
The figure shows the TbMi distribution of the TbFeCo film produced using the same TbFeCo alloy sputtering target material. The figure shows the Tb composition distribution of the TbFeCo alloy sputtering target material in the second example. Fig. 6 is a schematic perspective view of a cando electrode of a magnetron sputtering device, Fig. 7 is a conventional TbFeCo alloy sputtering target material. TbFeC produced in FIG. 3 is a Tb composition distribution diagram of a film. 1...TbFeCo alloy, 2...back plate, 3...
...TbFeCo alloy spanotaring target, /) material, 4...N pole magnet, 5...S pole magnet. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 4
Fig. 5 - Fig. 6 - Fig. 7 - Kii f - Mi position l□

Claims (1)

【特許請求の範囲】 （１）２種以上の元素で構成され、その組成比が径方向
位置に対する依存性を有し、かつ円板状に形成してなる
スパッタリングターゲット材。 （２）構成元素が希土類遷移金属合金材料で構成された
特許請求の範囲第１項記載のスパッタリングターゲット
材。 （３）Ｆｅ及びＴｂ、Ｇｄを主成分元素とし、ＴｂとＧ
ｄを合わせた組成比が１６〜３０ａｔ％の範囲内にある
特許請求の範囲第２項記載のスパッタリングターゲット
材。 （４）Ｔｂ及びＦｅ、Ｃｏを主成分元素とし、Ｔｂの組
成比が１０〜４０ａｔ％の範囲内にある特許請求の範囲
第２項記載のスパッタリングターゲット材。 （６）Ｇｄ、Ｔｂ及びＦｅ、Ｃｏを主成分元素とし、Ｔ
ｂとＧｄを合わせた組成比が１０〜５０ａｔ％の範囲内
にある特許請求の範囲第２項記載のスパッタリングター
ゲット材。 （６）Ｇｄ、Ｔｂ、Ｄｙの希土類金属の少くとも一種類
と、Ｆｅ、Ｃｏの遷移金属の少くとも一種類を含む希土
類・遷移金属合金にＣｒ、Ｓｎ、Ｂｉ、Ｔｉ、Ｃｕ、Ｚ
ｒ、Ｓｉ、Ｇｅの少くとも一種類を０〜２０ａｔ％添加
した特許請求の範囲第２項記載のスパッタリングターゲ
ット材。[Scope of Claims] (1) A sputtering target material composed of two or more kinds of elements, whose composition ratio has dependence on radial position, and formed into a disk shape. (2) The sputtering target material according to claim 1, wherein the constituent element is a rare earth transition metal alloy material. (3) Main component elements are Fe, Tb, and Gd, and Tb and G
The sputtering target material according to claim 2, wherein the combined composition ratio of d is within the range of 16 to 30 at%. (4) The sputtering target material according to claim 2, wherein the main constituent elements are Tb, Fe, and Co, and the composition ratio of Tb is within the range of 10 to 40 at%. (6) Main component elements are Gd, Tb, Fe, and Co, and T
The sputtering target material according to claim 2, wherein the combined composition ratio of b and Gd is within the range of 10 to 50 at%. (6) Rare earth/transition metal alloy containing at least one rare earth metal such as Gd, Tb, and Dy and at least one transition metal such as Fe and Co, including Cr, Sn, Bi, Ti, Cu, and Z.
The sputtering target material according to claim 2, wherein at least one of r, Si, and Ge is added in an amount of 0 to 20 at%.
JP60228042A 1985-10-14 1985-10-14 Target material for sputtering Pending JPS6286159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60228042A JPS6286159A (en) 1985-10-14 1985-10-14 Target material for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60228042A JPS6286159A (en) 1985-10-14 1985-10-14 Target material for sputtering

Publications (1)

Publication Number Publication Date
JPS6286159A true JPS6286159A (en) 1987-04-20

Family

ID=16870286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60228042A Pending JPS6286159A (en) 1985-10-14 1985-10-14 Target material for sputtering

Country Status (1)

Country Link
JP (1) JPS6286159A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307267A (en) * 1987-06-04 1988-12-14 Toshiba Corp Sputtering target and its production
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307267A (en) * 1987-06-04 1988-12-14 Toshiba Corp Sputtering target and its production
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making

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