WO2014101255A1 - 一种led封装结构 - Google Patents

一种led封装结构 Download PDF

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Publication number
WO2014101255A1
WO2014101255A1 PCT/CN2013/000735 CN2013000735W WO2014101255A1 WO 2014101255 A1 WO2014101255 A1 WO 2014101255A1 CN 2013000735 W CN2013000735 W CN 2013000735W WO 2014101255 A1 WO2014101255 A1 WO 2014101255A1
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Prior art keywords
light
conversion layer
package structure
led package
led
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English (en)
French (fr)
Inventor
郑天航
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Opple Lighting Co Ltd
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Opple Lighting Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

Definitions

  • the present invention relates to a package structure of a semiconductor lighting device, and more particularly to an LED package structure.
  • Another package structure is side-illuminated, that is, by emitting the LED side on the edge of the light guide plate, such as US Patent No. 2005185113, in which the packaged LED component is placed on the side of the light guide plate, and then Irradiation perpendicular to the side of the light guide plate, and then through the light mixing in the light guide plate to achieve the effect of surface illumination.
  • the packaged LED components the light conversion efficiency between the LED and the light guide plate is usually greatly reduced, on the one hand, because the direction of illumination of the packaged LED is difficult to control, and on the other hand, the packaging process itself Say, a small portion of the light emitted from the LED chip is lost. Summary of invention
  • the object of the present invention is to solve the above problems of the LED package structure and to provide a LED surface light source which is low in cost, simple in structure and simple in process, and thin.
  • the present invention solves the above technical problem, and the technical solution adopted is to provide an LED package structure, which is characterized by:
  • Matrix At least one LED illuminator disposed on the substrate;
  • a planar light conversion layer is disposed on the substrate, including at least one light incident surface and a light exiting surface, wherein the light emitting surface is on the opposite side or the same side of the substrate, and the light incident surface and the light emitting surface form a clip An angle, the LED illuminator is adjacent to the light incident surface, and provides light of a first wavelength to the planar light conversion layer;
  • the phosphor is distributed in the form of particles in the planar light conversion layer, and converts at least a portion of the light of the first wavelength into light having a wavelength different from the first wavelength, the light of the first wavelength and the wavelength after the conversion Light is emitted together from the light exit surface of the planar light conversion layer.
  • opposite sides refer to opposite sides.
  • the phosphor is a remote phosphor.
  • the phosphor is uniformly distributed in the planar light conversion layer.
  • the phosphors are unevenly distributed in the planar light conversion layer, and the distribution density thereof increases as the distance from the light incident surface of the planar light conversion layer increases.
  • the phosphor is unevenly distributed in the planar light conversion layer, and the distribution density thereof decreases as the distance from the light exit surface of the planar light conversion layer increases.
  • the phosphor is a single characteristic wavelength phosphor, or a multi- signature wavelength mixed phosphor.
  • the opposite side of the light-emitting surface is further provided with a light reflecting surface for reflecting light toward the light-emitting surface, wherein the light-reflecting surface is a metal reflective coating on the surface of the substrate, or a diffusion film, or an embossed surface.
  • the light-reflecting surface is a metal reflective coating on the surface of the substrate, or a diffusion film, or an embossed surface. Surface topology.
  • the light-emitting side is further provided with a second light-emitting surface.
  • the planar light conversion layer is a colloid-cured sheet profile mixed with the phosphor.
  • the planar light conversion layer is a sheet having a uniform thickness.
  • the planar light conversion layer is a wedge shape with a thickness gradient.
  • the planar light conversion layer is square, circular, elliptical or polygonal.
  • the LED illuminator is located on one side of the planar light conversion layer, or two opposite sides, or three or more sides.
  • the surface of the planar light conversion layer has a microstructure.
  • a scattering layer is further disposed on the light emitting surface of the surface of the planar light conversion layer, and the scattering layer is a high polymer-prepared scattering film microstructure or a solution sprayed scattering structure.
  • a light extraction layer is further disposed on the light-emitting surface of the surface of the planar light conversion layer, and the light extraction layer is a multilayer film structure composed of a material having a refractive index greater than 1.5 alone or mixed with other materials.
  • the LED package structure further includes a heat dissipation device, and the heat dissipation device is connected to the LED illuminator.
  • the LED illuminator is an LED chip, or a packaged LED component, or an LED module.
  • the invention adopts the above technical solution, so that the function of the original structure of the light guide plate and the phosphor layer is realized by using one layer structure compared with the prior art, so the scheme adopted by the invention has a simple structure and reduces the cost. , simplifies the process.
  • the remote phosphor technology is used to reduce the self-absorption of the light emitted by the chip, improve the light extraction efficiency, and reduce the operating temperature of the phosphor, prolonging the service life.
  • the side-illuminated mode reduces the chance of glare and makes it easier to convert from point source to surface source.
  • Embodiment 1 is a schematic structural view of Embodiment 1 of the present invention.
  • Embodiment 2 is a schematic structural view of Embodiment 2 of the present invention
  • FIG. 3 is a schematic structural view of a planar light conversion layer according to Embodiment 2 of the present invention.
  • Figure 4 is a schematic view showing the distribution density of phosphor in the planar light conversion layer of the present invention.
  • the LED package structure proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
  • FIG. 1 and 2 are two preferred embodiments of the present invention, FIG. 1 is a first embodiment, and FIG. 2 is a second embodiment.
  • the package structure provided by the present invention includes a substrate 1 and a substrate used in the invention. 1, can choose a variety of materials, including not limited to glass, plastic acrylic sheet, metal foil and so on. Further, a re-modification can be performed on the surface of the substrate 1, and a reflective layer 3 is further provided on the substrate 1 in the first embodiment and the second embodiment.
  • the reflective layer 3 is formed by spraying a reflective material (such as a metal film).
  • the reflective layer 3 is a diffusion film (such as a polymer scattering layer.
  • other treatments may be performed on the surface of the substrate 1 For example, roughening of the surface, or imprinting of the microstructure, etc. Further, the shape of the substrate 1 can also be flexibly selected.
  • a planar light conversion layer 4 is disposed on the substrate 1.
  • the planar light conversion layer 4 is a translucent phosphor layer composed of phosphor (including ordinary phosphor or semiconductor quantum dot luminescent material, etc.) and silica gel, glass or Other types of solvent-based materials mix and cure the formed sheet profiles.
  • the planar light conversion layer 4 includes a light incident surface and a light exit surface. Please refer to FIG. 1 and FIG. 2 because it is a flat plate structure, and the light exit surface is a plane of a flat plate, that is, a surface substantially parallel to the base body, and may be on the side of the base body. Can be on the opposite side of the substrate.
  • the light exiting surface may be emitted on one side of the substrate or on both sides.
  • the surface connecting the bottom surface and the light exit surface is the light incident surface.
  • the light-emitting surface is perpendicular to the light-incident surface.
  • the light-incident surface may not be perpendicular to the light-emitting surface.
  • the planar light-converting layer 4 may have a trapezoidal cross section, and the light-incident surface is not It must be a plane, it can be a circular arc surface.
  • the bottom surface refers to the side of the planar light conversion layer 4 that is in contact with the substrate.
  • the opposite side refers to the opposite sides.
  • an LED illuminator 2 is disposed on the substrate 1 adjacent to the light incident surface of the planar light conversion layer 4, and the fixed wavelength light emitted therefrom is incident on the planar light conversion layer 4 perpendicularly to the light incident surface.
  • the planar light conversion layer 4 can select various shapes including, but not limited to, square, circular, elliptical and polygonal
  • the LED illuminator 2 can also be flexibly arranged, such as arranged on one side of the planar light conversion layer 4. side, Alternatively, they may be disposed on opposite sides of the symmetrical shape of the planar light conversion layer 4, and may be arranged on all sides of the entire planar light conversion layer 4.
  • LED illuminators 2 can be arranged on each of the illuminating surfaces to provide light.
  • the LED illuminator 2 can be an LED chip without a package, and can also use a packaged LED component or an LED module, such as an LED component with a proximity phosphor, a process LED, a LED element for packaging a reticle, etc. .
  • the heat sink 7 is also connected to the LED illuminator 2 in consideration of the heat dissipation requirement of the LED.
  • the LED chips involved can use energies corresponding to various characteristic wavelengths higher than the excitation energy of the phosphor used, so that energy can be efficiently converted and reasonable mixing can be realized.
  • the LED chip can select a UV LED, a blue LED, a green LED, etc., and then the corresponding wavelength of the corresponding phosphor has an energy lower than the corresponding wavelength energy of the LED chip, for example, a red phosphor.
  • the selection of the phosphor may be a single characteristic wavelength phosphor or a multi-character wavelength hybrid phosphor.
  • the phosphor distribution in the planar light conversion layer 4 can be uniformly distributed and in the sheet, as shown in FIG.
  • a non-uniform distribution can be adopted for better light mixing effect, as shown in FIG. 4b.
  • the distribution density of the powder in the planar light conversion layer 4 increases as the distance from the light incident surface of the planar light conversion layer 4 increases, or the phosphor is in the planar light conversion layer 4 as shown in FIG. 4c.
  • the distribution density within the interior decreases as the distance from the exit surface of the planar light converting layer 4 increases.
  • the design of the planar light conversion layer 4 can be selected according to the actual surface illuminating characteristics, including but not limited to the cube sheet having the thickness of the hook, as shown in FIG. 1 of the first embodiment, or the wedge shape having the gradual thickness, as seen in the second embodiment. figure 2.
  • various treatments can be performed on the surface of the planar light conversion layer 4, so that the surface illuminating effect of the final element can be controlled to achieve the desired surface illuminating effect, such as roughening the surface or using a profile having a special microstructure on the surface, which is enlarged.
  • the structure can be referred to Figure 3.
  • the microstructure described in the present invention may be attached to one surface of the planar light conversion layer 4, or both upper and lower surfaces.
  • the microstructure can adopt various structures such as depressions, bumps, corrugations, serrations, etc., and the divisions can also be based on distance light. Different distribution densities are used for the source.
  • the planar light conversion layer 4 is further covered with a scattering layer 6 which may be a scattering film microstructure prepared by a high polymer or a scattering structure directly sprayed by a solution, such as direct
  • a scattering layer 6 which may be a scattering film microstructure prepared by a high polymer or a scattering structure directly sprayed by a solution, such as direct
  • the phosphor layer is coated with silica (SiO 2 ) particles or other particles to form a thin film, and the scattering effect on light is achieved.
  • a light extraction layer 5 may be further added on the scattering layer 6 to improve the light extraction efficiency.
  • the material of the light extraction layer 5 has a refractive index greater than 1.5, and the light extraction layer is made of a material having a refractive index greater than 1.5.
  • a multilayer film structure composed of a material having a refractive index of more than 1.5 and less than 1.5.
  • various microstructures are prepared thereon as needed to improve the light output efficiency by improving the path of total reflection of the light in the planar light conversion layer 4 and the scattering layer 6.
  • the scattering layer 6 and the light extraction layer 5 are added for the purpose of improving the light output efficiency, and are not intended to limit the scope of the present invention. In other embodiments of the present invention, these structures may not be included, or only both. one of the.

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  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

提供一种发光二极管(LED)封装结构,包括:基体(1);至少一个LED发光体(2),设于所述基体(1);平面光转换层(4),设于所述基体(1),包括至少一个入光面和一出光面,所述出光面在所述基体(1)的对侧或同侧,所述入光面和所述出光面之间形成一个夹角,所述LED发光体(2)和所述入光面相邻,并且向所述平面光转换层(4)提供第一波长的光;荧光粉以微粒形式分布在所述平面光转换层(4)内,将至少一部分所述第一波长的光转换成为波长和所述第一波长不同的光,所述第一波长的光和转换波长后的光一起从所述平面光转换层(4)的出光面射出。与现有技术相比,上述LED封装结构使用一层结构实现了原来导光板和荧光粉层两层结构的功能,因此结构简单,同时降低了成本,简化了工艺。

Description

一种 LED封装结构 技术领域
本发明涉及一种半导体照明器件的封装结构, 尤其是一种 LED封装结 构。 技术背景
目前来说,开发 LED面发光元件主要有两种方法,一种是直下式的,如 韩国专利 KR20090073432, 在这种结构中, 封装好的 LED器件直接放置在 导光板或者光散射板的上方,经过放置方式的优化,最终实现面发光的效果。 这种方式虽然具有较高的光转换效率, 但通常来说, 面发光元件的体积比较 大, 特别是因为叠加了光源与导光板的厚度, 在厚度上很难实现薄型化。
另一种封装结构是侧发光式的, 即通过把 LED侧放于导光板的边缘, 来实现面发光, 如美国专利 US2005185113, 该专利中将封装好的 LED元件 放置于导光板的侧面, 然后垂直于导光板的侧面照射, 进而在导光板内经过 混光达到面发光的效果。 但是, 使用封装好的 LED元件, 通常在 LED与导 光板之间的光转化效率会有很大的降低, 一方面因为封装好的 LED的发光 方向难于控制, 另外一方面, 就封装过程本身来说, 从 LED芯片发出的光 有一小部分被损失了。 发明概要
本发明的目的是为了解决上述 LED封装结构存在的问题, 提供一种低 成本、 结构、 工艺简单的, 薄型化的 LED面光源。
本发明为解决上述技术问题, 所采用的技术方案是提供一种 LED封装 结构, 其特征在于包括:
基体; 至少一个 LED发光体, 设于所述基体;
平面光转换层, 设于所述基体, 包括至少一个入光面和一出光面, 所述 出光面在所述基体的对侧或同侧, 所述入光面和所述出光面相形成一个夹 角, 所述 LED发光体和所述入光面相邻, 并且向所述平面光转换层提供第 一波长的光;
荧光粉以微粒形式分布在所述平面光转换层内,将至少一部分所述第一 波长的光转换成为波长和所述第一波长不同的光,所述第一波长的光和转换 波长后的光一起从所述平面光转换层的出光面射出。
其中, 上述对侧指的是相对的两侧。
可选的, 所述荧光粉为远程荧光粉。
可选的, 所述荧光粉均匀分布在所述平面光转换层内。
可选的, 所述荧光粉在所述平面光转换层内的分布不均匀, 其分布密度 随离开所述平面光转换层入光面的距离的增加而增加。
可选的, 所述荧光粉在所述平面光转换层内的分布不均匀, 其分布密度 随离开所述平面光转换层出光面的距离的增加而减小。
可选的, 所述荧光粉为单一特征波长的荧光粉, 或多特征波长的混合荧 光粉。
可选的, 所述出光面的对侧还设有一光反射面, 用以将光线向出光面反 射, 所述光反射面为在基体表面的金属反光涂层、 或扩散薄膜、 或压印的表 面拓扑结构。
可选的, 所述出光面对侧还设有第二出光面。
可选的,所述平面光转换层为混合有所述荧光粉的胶体固化成型的薄片 型材。
可选的, 所述平面光转换层为厚度均匀的片材。
可选的, 所述平面光转换层为者厚度渐变的楔形。 可选的, 所述平面光转换层为方形、 圆形、 椭圆形或多边形。
可选的, 所述 LED发光体位于所述平面光转换层的一个侧面、 或者相 对的两个侧面、 或者三个以上侧面。
可选的, 所述平面光转换层表面具有微结构。
可选的, 所述平面光转换层表面的出光面上还设有散射层, 所述散射层 为高聚合物制备的散射膜微结构,或者是溶液喷涂而成的散射结构。
可选的, 所述平面光转换层表面的出光面上还设有光提取层, 所述光提 取层采用折射率大于 1.5的材料单独或者混合其他材料组成的多层膜结构。
可选的, 所述 LED封装结构还包括散热装置, 所述散热装置连接所述 LED发光体。
可选的,所述 LED发光体为 LED芯片、或封装后的 LED元件、或 LED 模组。
本发明由于采用了上述技术方案, 使之与现有技术相比, 使用一层结构 实现了原来导光板和荧光粉层两层结构的功能, 因此本发明采用的方案结构 简单, 同时降低了成本, 简化了工艺。 采用了远程荧光粉技术, 降低芯片对 发出的光的自吸收,提高出光效率, 并且降低荧光粉的工作温度,延长了使 用寿命。采用了侧发光模式降低了出现眩光的几率, 更易于实现从点光源到 面光源的转换。 附图说明
图 1是本发明实施例一的结构示意图
图 2是本发明实施例二的结构示意图
图 3是本发明实施例二中平面光转换层的结构示意图
图 4是本发明平面光转换层中荧光粉分布密度的示意图 发明内容 以下结合附图和具体实施例对本发明提出的 LED封装结构作进一步详 细的说明。
图 1、 图 2为本发明的两个较佳的实施例, 图 1为实施例一, 图 2表示 实施例二, 从图中可见本发明提供的封装结构包括基体 1, 发明中使用的基 体 1,可以选择各种材料, 包括单不限于玻璃、 塑料压克力板、 金属箔片等 等。 而且,在基体 1的表面上可以进行再修饰,在实施例一、 实施例二中基 体 1上还有一层反射层 3。在实施例一中反射层 3为喷涂反光材料形成的 (如 金属膜), 在实施例二中反射层 3为扩散薄膜 (如聚合物散射层。 当然还可以 在基体 1的表面进行其它处理, 如表面的粗糙化, 或压印微结构等等。 更进 一步, 基体 1的形状也可以灵活选择。
在基体 1上放置一平面光转换层 4, 在本实施例中平面光转换层 4为半 透明荧光粉层是由荧光粉 (包括普通荧光粉或者半导体量子点发光材料等) 与硅胶、玻璃或者其它类型的溶剂型材料混合并固化成型的薄片型材。平面 光转换层 4包括入光面和出光面, 请参考图 1、 图 2因为其为平板结构, 所 述出光面为平板的平面, 即和基体大致平行的面, 可以在基体一侧, 也可以 在基体对侧。 当然在另外的较佳实施例中, 如果基体采用透明材料, 出光面 也可以在基体一侧, 或者在两侧都有光线射出。连接底面和出光面的面为入 光面。在本实施例中出光面和入光面垂直, 在其他较佳实施例中入光面也可 能和出光面不垂直, 如平面光转换层 4的截面可以是梯形, 所述入光面也不 一定是平面, 可以是一段圆弧面。 其中, 底面是指平面光转换层 4与基体接 触的那一面。 对侧是指相对的两侧。
在基体 1上还设置有 LED发光体 2,其和平面光转换层 4的入光面相邻, 其射出的固定波长的光垂直于入光面照射入平面光转换层 4。 由于平面光转 换层 4可选择各种不同的形状, 包括但不限于方形、 圆形、 椭圆形及多边 形, LED发光体 2也可以灵活的设置,如排布在平面光转换层 4的一个侧边, 或者放置在对称形状的平面光转换层 4相对的两个侧面,还可以排布在整个 平面光转换层 4的所有侧面。 当然可以理解的是, 如果排布在多个侧面, 那 么入光面也将有多个。 同时在每个入光面的都可以安排一个或多个 LED发 光体 2来提供光线。 LED发光体 2可以是没有封装的 LED芯片, 还可以使 用封装好的 LED元件或者 LED模组, 例如加了近程荧光粉的 LED元件, 加 了进程荧光粉和封装光罩的 LED元等等。 同时考虑到 LED散热的需求, 在 本实施例中 LED发光体 2还连接有散热装置 7。
此外, 本发明中, 所涉及到的 LED芯片可以使用各种特征波长对应的 能量高于所用荧光粉的激发能量, 以使能量能够有效转换, 并实现合理的混 光。 例如 LED芯片可以选择 UV LED, 蓝色 LED, 绿色 LED等等, 然后对 应的荧光粉的特征波长对应的能量低于 LED芯片的对应波长能量, 例如, 红色荧光粉等。 当然, 荧光粉的选择上, 可以是单一特征波长的荧光粉, 也 可以是多特征波长的混合荧光粉。 同时, 平面光转换层 4中荧光粉分布可以 是均匀的分布与薄片中, 如图 4a所示, 为达到更好的混光效果可以采用非均 匀的分布, 如图 4b中所示所述荧光粉在所述平面光转换层 4内的分布密度 随离开所述平面光转换层 4入光面的距离的增加而增加, 或如图 4c所示所 述荧光粉在所述平面光转换层 4内的分布密度随离开所述平面光转换层 4出 光面的距离的增加而减小。
在平面光转换层 4的设计上可以根据实际的面发光特点进行选择,包括 但不限于厚度均勾的立方体片材, 如实施例一见图 1, 或者厚度渐变的楔形, 如实施例二见图 2。 当然在平面光转换层 4表面可以进行多种处理, 以使得 最终元件的面发光效果得到控制,达到所需要的面发光效果, 如表面粗糙化 或者采用表面带有特殊微结构的型材, 其放大结构可以参考图 3。 本发明中 所说的微结构,可以是附在平面光转换层 4的一个表面, 或者上下两个表面。 微结构可采用凹陷、 凸点、 波纹、 锯齿等各种结构, 其分也可以依据距离光 源的远近而采用不同的分布密度。
在实施例一、 二中, 平面光转换层 4上还覆盖有散射层 6, 散射层 6可 以是由高聚合物制备的散射膜微结构,或者直接由溶液喷涂而成的散射结构, 如直接在荧光粉层涂敷二氧化硅 (Si02)微粒或其它粒子等, 形成薄膜后,达 到对光的散射效果。 在散射层 6上面还可以再加一层光提取层 5, 以提高出 光效率, 一般来说, 光提取层 5的材料的折射率大于 1.5, 光提取层采用 折射率大于 1.5的材料制成,或者是由折射率大于 1.5和小于 1.5的材料组成 的多层膜结构。 并且根据需要, 在其上面制备各种微结构, 通过改善光在平 面光转换层 4和散射层 6的全反射的路径, 以达到提高光输出效率的目的。 当然可以理解的散射层 6和光提取层 5的加入是为了提高光输出效率,并不 是为了限定本发明的保护范围,在本发明的其他实施例中也可以不包括这些 结构, 或者只包括两者中的一个。
上文对本发明优选实施例的描述是为了说明和描述,并非想要把本发明 穷尽或局限于所公开的具体形式, 显然, 可能作出许多修改和变化, 这些修 改和变化可能对于本领域技术人员来说是显然的,应当包括在由所附权利要 求书定义的本发明的范围之内。

Claims

权利要求
1. 一种 LED封装结构, 其特征在于包括:
基体;
至少一个 LED发光体, 设于所述基体;
平面光转换层, 设于所述基体, 包括至少一个入光面和一出光面, 所 述出光面在所述基体的对侧或同侧, 所述入光面和所述出光面相形成一个 夹角, 所述 LED发光体和所述入光面相邻, 并且向所述平面光转换层提供 第一波长的光;
荧光粉以微粒形式分布在所述平面光转换层内, 将至少一部分所述第 一波长的光转换成为波长和所述第一波长不同的光, 所述第一波长的光和 转换波长后的光一起从所述平面光转换层的出光面射出。
2. 根据权利要求 1所述的 LED封装结构, 其特征在于所述荧光粉 为远程荧光粉。
3. 根据权利要求 1所述的 LED封装结构, 其特征在于所述荧光粉 均匀分布在所述平面光转换层内。
4. 根据权利要求 1所述的 LED封装结构, 其特征在于所述荧光粉 在所述平面光转换层内的分布不均匀, 其分布密度随离开所述平面光转换 层入光面的距离的增加而增加。
5. 根据权利要求 1所述的 LED封装结构, 其特征在于所述荧光粉 在所述平面光转换层内的分布不均匀, 其分布密度随离开所述平面光转换 层出光面的距离的增加而减小。
6. 根据权利要求 1所述的 LED封装结构, 其特征在于所述荧光粉 为单一特征波长的荧光粉, 或多特征波长的混合荧光粉。
7. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特征 在于所述出光面的对侧还设有一光反射面, 用以将光线向出光面反射, 所 述光反射面为在基体表面的金属反光涂层、 或扩散薄膜、 或压印的表面拓 扑结构。
8. 根据权利要求 1、 2、 3、 4、 5或 6所述的的 LED封装结构, 其特 征在于所述出光面对侧还设有第二出光面。
9. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特征 在于所述平面光转换层为混合有所述荧光粉的胶体固化成型的薄片型材。
10. 根据权利要求 9所述的 LED封装结构,其特征在于所述平面光转 换层为厚度均匀的片材。
11. 根据权利要求 9所述的 LED封装结构,其特征在于所述平面光转 换层为者厚度渐变的楔形。
12. 根据权利要求 10或 11所述的 LED封装结构,其特征在于所述平 面光转换层为方形、 圆形、 椭圆形或多边形。
13. 根据权利要求 12所述的 LED封装结构, 其特征在于所述 LED发 光体位于所述平面光转换层的一个侧面、 或者相对的两个侧面、 或者三个 以上侧面。
14. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特 征在于所述平面光转换层表面具有微结构。
15. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特 征在于所述平面光转换层表面的出光面上还设有散射层, 所述散射层为高 聚合物制备的散射膜微结构, 或者是溶液喷涂而成的散射结构。
16. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特 征在于所述平面光转换层表面的出光面上还设有光提取层, 所述光提取层 采用折射率大于 1. 5的材料单独或者混合其他材料组成的多层膜结构。
17. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特 征在于所述 LED封装结构还包括散热装置, 所述散热装置连接所述 LED发 光体。
18. 根据权利要求 1、 2、 3、 4、 5或 6所述的 LED封装结构, 其特 征在于所述 LED发光体为 LED芯片、 或封装后的 LED元件、 或 LED模组。
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