WO2014092414A1 - Composition d'encre semi-conductrice d'oxyde d'indium-zinc dans laquelle une réaction de combustion spontanée a lieu et film mince semi-conducteur inorganique produit ainsi - Google Patents

Composition d'encre semi-conductrice d'oxyde d'indium-zinc dans laquelle une réaction de combustion spontanée a lieu et film mince semi-conducteur inorganique produit ainsi Download PDF

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Publication number
WO2014092414A1
WO2014092414A1 PCT/KR2013/011357 KR2013011357W WO2014092414A1 WO 2014092414 A1 WO2014092414 A1 WO 2014092414A1 KR 2013011357 W KR2013011357 W KR 2013011357W WO 2014092414 A1 WO2014092414 A1 WO 2014092414A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
thin film
ink composition
zinc
indium
Prior art date
Application number
PCT/KR2013/011357
Other languages
English (en)
Korean (ko)
Inventor
조성윤
이창진
강영훈
Original Assignee
한국화학연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130149940A external-priority patent/KR20140078543A/ko
Application filed by 한국화학연구원 filed Critical 한국화학연구원
Publication of WO2014092414A1 publication Critical patent/WO2014092414A1/fr
Priority to US14/736,789 priority Critical patent/US9969896B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds

Definitions

  • the sol-gel method which is mainly used in the production of inorganic oxide semiconductors, is applied to a substrate by spin coating or inkjet printing with a metal precursor solution having a suitable P H and then thermally treated. During the heat treatment, the inorganic precursor undergoes hydrolysis and condensation reactions, and forms metal oxides due to the combination of metal and oxygen generated from these reactions.
  • inorganic precursors include metal alkoxides, metal acetates, metal nitrides, metal halides, and the like.
  • It provides a method for producing a semiconductor thin film using a semiconductor ink composition comprising the step (step 2) of heat-treating the film prepared in step 1.
  • ⁇ 4S> 1 substrate (gate electrode)
  • the metal C is one kind of metal selected from the group consisting of indium, gallium, zinc, titanium, aluminum, litop and zirconium, and the metal C is preferably different from the metal A and the metal B.
  • It provides a method for producing a semiconductor thin film using a semiconductor ink composition comprising the step (step 2) of heat-treating the film prepared in step 1.
  • step 2 the semiconductor thin film is manufactured by thermally treating the thin film coated on the substrate in step 1, and the zinc oxide nanostructure is homogeneously formed inside the manufactured semiconductor thin film, thereby providing excellent charge mobility. Its electrical properties are shown. In addition, due to spontaneous combustion reactions generated by mixing two metal precursor solutions, a compact and uniform thin film can be manufactured, and thus, reliability can be improved.
  • the spontaneous combustion reaction is an important feature of forming a semiconductor thin film from the inorganic semiconductor ink composition according to the present invention, a metal precursor (oxidizing material) having an oxidizing property and a metal precursor (combusting material) having a burning property.
  • Internal heat generated from the combustion reaction can be used as energy for the conversion from precursor to oxide. Accordingly, the external energy applied to the oxide formation, that is, the temperature required for heat treatment can be considerably lowered. Therefore, it is possible to reduce the high process temperature, which is considered a major disadvantage in the solution process of oxide semiconductors.
  • Example 3 when the zinc: indium is mixed in a molar ratio of 1: 1, as shown in Example 3 and Example 8 according to the present invention it can be seen that it shows an excellent charge mobility.
  • Example 3 according to the present invention it was confirmed that the remarkably excellent charge exhibited the same value at a maximum of 13.8 cm 2 / V ⁇ s.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)

Abstract

La présente invention a pour but de proposer une composition d'encre semi-conductrice d'oxyde d'indium-zinc dans laquelle une réaction de combustion spontanée a lieu, et de proposer un film mince semi-conducteur inorganique produit ainsi. Dans ce but, la présente invention fournit une composition d'encre semi-conductrice qui comprend un complexe, représenté par la formule 1, incorporant un nitrate d'un métal A qui est une matière oxydante et incorporant un métal B qui est une matière combustible ; le métal A et le métal B représentant chacun respectivement un métal choisi dans le groupe consistant en indium, gallium, zinc, titane, aluminium, lithium et zirconium, et le métal A et le métal B étant différents l'un de l'autre. Selon la présente invention, la composition d'encre semi-conductrice d'oxyde d'indium-zinc dans laquelle une réaction de combustion spontanée a lieu, et le film mince semi-conducteur inorganique produit ainsi, peuvent être utilisés comme matière de canal d'un élément transistor, et par conséquent peuvent produire des transistors de film mince inorganique ayant une performance électrique améliorée. Également, la présente invention est appropriée pour traitement en solution et donc est facile à produire sous la forme d'un film mince et apte à traitement à basse température, et peut produire des films minces qui sont denses et uniformes dû à une réaction de combustion spontanée qui a lieu lors du mélange des deux précurseurs métalliques coordonnés avec une matière combustible et une matière oxydante.
PCT/KR2013/011357 2012-12-14 2013-12-09 Composition d'encre semi-conductrice d'oxyde d'indium-zinc dans laquelle une réaction de combustion spontanée a lieu et film mince semi-conducteur inorganique produit ainsi WO2014092414A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/736,789 US9969896B2 (en) 2012-12-14 2015-06-11 Indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and inorganic semiconductor thin film produced thereby

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20120146086 2012-12-14
KR10-2012-0146086 2012-12-14
KR10-2013-0149940 2013-12-04
KR1020130149940A KR20140078543A (ko) 2012-12-14 2013-12-04 자발적 연소 반응이 발생하는 인듐아연 산화물계 반도체 잉크 조성물 및 이를 통해 제조되는 무기 반도체 박막

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/736,789 Continuation US9969896B2 (en) 2012-12-14 2015-06-11 Indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and inorganic semiconductor thin film produced thereby

Publications (1)

Publication Number Publication Date
WO2014092414A1 true WO2014092414A1 (fr) 2014-06-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/011357 WO2014092414A1 (fr) 2012-12-14 2013-12-09 Composition d'encre semi-conductrice d'oxyde d'indium-zinc dans laquelle une réaction de combustion spontanée a lieu et film mince semi-conducteur inorganique produit ainsi

Country Status (1)

Country Link
WO (1) WO2014092414A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110106175A (ko) * 2010-03-22 2011-09-28 삼성전자주식회사 양자점 제조 방법
KR20110108064A (ko) * 2010-03-26 2011-10-05 삼성전자주식회사 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자
KR20110119880A (ko) * 2010-04-28 2011-11-03 한국과학기술원 박막트랜지스터용 금속 산화물 반도체 제조용 용액 조성물

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110106175A (ko) * 2010-03-22 2011-09-28 삼성전자주식회사 양자점 제조 방법
KR20110108064A (ko) * 2010-03-26 2011-10-05 삼성전자주식회사 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자
KR20110119880A (ko) * 2010-04-28 2011-11-03 한국과학기술원 박막트랜지스터용 금속 산화물 반도체 제조용 용액 조성물

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