WO2014084220A1 - Élément électroluminescent organique, et dispositif d'affichage d'image et dispositif d'éclairage équipés dudit élément électroluminescent organique - Google Patents

Élément électroluminescent organique, et dispositif d'affichage d'image et dispositif d'éclairage équipés dudit élément électroluminescent organique Download PDF

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Publication number
WO2014084220A1
WO2014084220A1 PCT/JP2013/081820 JP2013081820W WO2014084220A1 WO 2014084220 A1 WO2014084220 A1 WO 2014084220A1 JP 2013081820 W JP2013081820 W JP 2013081820W WO 2014084220 A1 WO2014084220 A1 WO 2014084220A1
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organic
light
cathode
anode
substrate
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PCT/JP2013/081820
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English (en)
Japanese (ja)
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祥貴 下平
祐介 山▲崎▼
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昭和電工株式会社
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the present invention relates to an organic EL element, and an image display device and an illumination device including the organic EL element.
  • Organic EL elements have features such as a wide viewing angle, high-speed response, and clear self-luminous display. They are thin, lightweight, and have low power consumption. As expected. Organic EL elements are classified into a bottom emission type in which light is extracted from the support substrate side and a top emission type in which light is extracted from the opposite side of the support substrate, depending on the direction in which the light generated in the organic light emitting layer is extracted. .
  • a bottom emission type organic EL device out of light emitted from the light emitting layer, light incident perpendicularly to the transparent substrate passes through the transparent substrate and is extracted outside the device.
  • a small incident angle incident light and incident light
  • the critical angle at the interface between the transparent substrate for example, glass (refractive index: 1.52)
  • air refracted at the interface and extracted outside the device.
  • these lights are called external mode lights.
  • the light incident on the interface between the transparent substrate and air at an incident angle larger than the critical angle is totally reflected at the interface and is not taken out of the device, and finally Can be absorbed by the material.
  • this light is referred to as substrate mode light, and the loss due to this is referred to as substrate loss.
  • the light incident on the interface between the substrate and the cathode at an incident angle greater than the critical angle is also totally reflected at the interface and is not extracted outside the device, but is finally absorbed by the material. sell.
  • an anode made of a transparent conductive oxide (for example, indium tin oxide (ITO (refractive index: 1.82)) and a transparent substrate (for example, glass (refractive index: 1) .52)
  • ITO indium tin oxide
  • a transparent substrate for example, glass (refractive index: 1) .52)
  • waveguide mode light This loss is called waveguide loss.
  • the light extraction efficiency of the organic EL element is generally limited to about 20% (for example, Patent Document 1). That is, about 80% of the light emitted from the light emitting layer is lost, and it is a big problem to reduce these losses and improve the light extraction efficiency.
  • the extraction of the substrate mode light can be dealt with by providing a light diffusion sheet or the like on the transparent substrate (for example, Patent Document 2).
  • Patent Document 2 research on the reduction and extraction of guided mode light and SPP mode light, particularly reduction and extraction of SPP mode light, has just started.
  • Patent Document 3 discloses a configuration in which a high refractive index layer having a higher refractive index than that of an organic light emitting layer or a transparent electrode is inserted in the vicinity of the organic light emitting layer.
  • Patent Document 2 discloses a configuration in which the refractive index of the organic light emitting layer and the transparent electrode is equivalently lowered by dispersing fine particles having a refractive index lower than that of the organic light emitting layer and the transparent electrode in the organic light emitting layer and the transparent electrode. ing.
  • Patent Documents 4 and 5 disclose a configuration in which holes (cavities) are formed in an anode layer and a dielectric layer that are sequentially formed on a substrate. Light incident on the side surface of the cavity (interface extending perpendicular to the substrate) is refracted toward the substrate at this interface. By this effect, the ratio of light that causes total reflection can be reduced by changing the incident angle of the waveguide mode light to a shallow angle.
  • Patent Documents 6 to 9 As a method for extracting the SPP mode light trapped on the metal surface, a configuration in which a periodic uneven structure is formed on the surface of the cathode is known (Patent Documents 6 to 9).
  • a configuration is also known in which a diffractive lens is provided on the opposite side of the light emitting layer of the cathode (Patent Document 10).
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide an organic EL element in which SPP mode light is effectively extracted to improve light extraction efficiency, and an image display device and an illumination device including the organic EL element. To do.
  • the inventors first extract SPP mode light as guided mode light and then take out the guided mode light to the outside of the device. Therefore, an effective structure for improving the light extraction efficiency was intensively studied based on simulations. Since it is difficult to directly measure the light extraction efficiency, we examined it based on simulation.
  • the two-step light extraction mechanism is a reflective electrode side structure having a plurality of radiation starting points arranged periodically to enable generation of SPP mode light and extraction of the generated SPP mode light into an organic layer;
  • the light transmission electrode side structure is provided with a plurality of diffraction lenses to extract the light extracted into the organic layer to the outside.
  • the radiation starting point portion of the reflective electrode side structure is a portion that becomes a starting point from which the SPP mode light trapped on the metal surface is re-radiated.
  • Each of the plurality of diffractive lenses provided in the light transmission electrode side structure of the present invention has a configuration in which a plurality of bands are arranged at equal intervals, or a plurality of bands so that the intervals are narrowed from the center of the lens toward the periphery. Is provided.
  • the belt portions are arranged so as to be parallel to each other in a line extending in one direction in the plane.
  • the belt portions are annular and arranged concentrically with each other.
  • One lens is composed of two types of belt portions, a high refractive index belt portion and a low refractive index belt portion, and the refractive indexes of adjacent belt portions are different from each other. That is, the refractive index of the belt portion is configured to be “high, low, high, low ...” or “low, high, low, high ...” in order from the lens center.
  • This diffractive lens has a function of condensing light emitted from the radiation starting point as a whole at a focal point in the normal direction of the substrate surface (a plane parallel to the light emitting surface). Therefore, the guided mode light incident on the diffractive lens is condensed in the normal direction of the substrate surface for each diffractive lens and is incident on the substrate surface or the like.
  • the waveguide mode light changes to an angle at which the incident angle to the substrate (angle with respect to the normal of the substrate surface) is small. Therefore, the light extraction efficiency can be improved by increasing the light that can avoid total reflection at the interface between the substrate and air.
  • the position of the focal point may be at a finite distance from the diffractive lens, or may be at infinity (a diffracted light becomes a plane wave propagating in the normal direction).
  • an organic EL element comprising a light transmissive electrode, an organic layer including a light emitting layer made of an organic EL material, and a reflective electrode in order, and the reflective electrode is periodically formed on the surface of the organic layer.
  • a plurality of radiating origin portions arranged, comprising a plurality of diffractive lenses on the opposite side of the organic layer from the reflective electrode, and the radiating origin portions overlapping the diffractive lenses in plan view An organic EL element characterized by being arranged in the above.
  • a substrate is provided on the opposite side of the light transmissive electrode from the organic layer, and is configured to extract light from the substrate side to the outside.
  • the light transmissive electrode is an anode
  • the reflective electrode is The organic EL element according to (1), wherein the organic EL element is a cathode and includes the plurality of diffraction lenses between an outer surface of the substrate and the organic layer.
  • the diffractive lens is provided so that the center thereof is disposed on the center line of the radiation starting point portion in plan view, according to any one of (1) to (4), The organic EL element of description.
  • an organic EL element in which SPP mode light and waveguide mode light are effectively extracted to improve light extraction efficiency, and an image display device and an illumination device including the organic EL element.
  • FIG. 1 It is a schematic diagram in case the phase of the ring zone part of a diffraction lens and the ring zone part of a light transmissive electrode is reverse (reverse phase), (a) is a cross-sectional schematic diagram, (b) A plane schematic diagram. It is a cross-sectional schematic diagram for demonstrating an example of the organic EL element which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating an example of the organic EL element which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating an example of the image display apparatus provided with the organic EL element of this invention. It is a cross-sectional schematic diagram for demonstrating an example of the illuminating device provided with the organic EL element of this invention.
  • the structure of an organic EL element to which the present invention is applied, an image display apparatus and an illumination apparatus including the organic EL element will be described with reference to the drawings.
  • the portions that become the features may be shown in an enlarged manner for convenience, and the dimensional ratios and the like of the respective components are not always the same as the actual ones.
  • the materials, dimensions, and the like exemplified in the following description are merely examples, and the present invention is not limited to these, and can be appropriately modified and implemented without changing the gist thereof.
  • the configuration of the bottom emission type will be described.
  • the organic EL element according to the present invention may be a top emission type.
  • FIG. 1 is a schematic cross-sectional view for explaining an example of an organic EL element according to an embodiment of the present invention.
  • FIG. 2 is a schematic plan view of a diffractive lens provided in the organic EL element of FIG.
  • An organic EL element 10 according to an embodiment of the present invention includes an anode (light transmission electrode) 2, an organic layer 3 including a light emitting layer made of an organic EL material, and a cathode (reflection electrode) 4 on a substrate 1. It is the organic EL element 10 which comprises in order.
  • the cathode 4 has a plurality of radiation starting points 4a periodically disposed on the surface 4A on the organic layer side.
  • a plurality of diffractive lenses 5 are provided between the substrate 1 and the organic layer 3, and the radiation starting point portion 4 a is disposed at a position overlapping the diffractive lenses 5 in plan view.
  • the diffractive lens only needs to be on the opposite side of the organic layer 3 from the cathode 4, and may be arranged at any position between the outer surface of the substrate 1 and the organic layer 3.
  • the present embodiment is configured to be disposed between the substrate 1 and the organic layer 3 and particularly in the anode 2.
  • the diffractive lens 5 is disposed in the anode 2 and has a plurality of annular portions 5a made of a concentric dielectric.
  • the anode 2 has a plurality of concentric annular zone portions 2a arranged alternately with the annular zone portions 5a.
  • either one of the annular zone 2a of the anode 2 or the annular zone 5a of the diffractive lens 5 includes not only an annular zone having a ring shape but also a central portion of a concentric circle and a circular center portion. Shall be.
  • the anode 2 has a ring zone portion 2 a which is a circular center portion.
  • the organic layer 3 has a layered portion 3 a disposed between the anode 2 and the cathode 4. Furthermore, the organic layer 3 has a part (in the example of FIG.
  • a convex part 3b) corresponding to the shape of the radiation starting point part 4a a convex part 3b corresponding to the shape of the radiation starting point part 4a.
  • the portion 3b corresponding to the shape of the radiation starting point portion 4a is a concave shape (recessed portion) formed on the surface of the reflective electrode on the organic layer side as shown in FIG. It becomes a convex shape, or a concave shape if the radiation starting point 4a is a convex shape.
  • the diffractive lens 5 is provided so that the center thereof is disposed on the center line C1 of the radiation starting point portion 4a in plan view.
  • the substrate 1 is a light-transmitting substrate and usually needs to be transparent to visible light.
  • transparent to visible light means that it is only necessary to transmit visible light having a wavelength emitted from the light emitting layer, and does not need to be transparent over the entire visible light region.
  • a smooth substrate having a transmittance in visible light of 400 to 700 nm of 50% or more is preferable.
  • glass plates and polymer plates examples include soda lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
  • the polymer plate examples include polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyether sulfide, polysulfone, and PEN (polyethylene naphthalate).
  • the transmittance is preferably 50% or more and more preferably 70% or more with respect to the wavelength at which light emission has the maximum intensity.
  • the substrate 1 is disposed on the side opposite to the organic layer 3 when viewed from the cathode 4.
  • the substrate 1 can be made of an opaque material in addition to the same as described above. Specifically, for example, Cu, Ag, Au, Pt, W, Ti, Ta, Nb, Al alone, an alloy containing these elements, or a metal material such as stainless steel, Si, SiC, AlN, GaN, Nonmetallic materials such as GaAs and sapphire, and other substrate materials usually used in top emission type organic EL elements can be used.
  • a material having high thermal conductivity is preferably used for the substrate.
  • the anode 2 is an electrode for applying a voltage to the cathode 4 and injecting holes from the anode 2 into the light emitting layer. It is preferable to use a material made of a metal, an alloy, a conductive compound, or a mixture thereof having a high work function. Further, it is preferable to use a material having a work function of 4 eV or more and 6 eV or less so that the difference from the HOMO (Highest ⁇ Occupied Molecular Orbital) level of the organic layer in contact with the anode does not become excessive.
  • HOMO Highest ⁇ Occupied Molecular Orbital
  • the material of the anode 2 is not particularly limited as long as it is a translucent and conductive material.
  • transparent inorganic oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide, zinc oxide, PEDOT: PSS (poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonic acid) ), Conductive polymers such as polyaniline, and conductive polymers doped with any acceptor, and transparent carbon materials such as carbon nanotubes and graphene.
  • the anode 2 can be formed on the substrate 1 by, for example, a sputtering method, a vacuum deposition method, a coating method, or the like.
  • the diffractive lens 5 includes a plurality of annular portions 5 a made of a concentric dielectric, and is made of a material having a refractive index different from that of the anode 2.
  • the refractive index of the diffractive lens 5 is preferably lower than the refractive index of the anode 2.
  • the material of the diffractive lens 5 is not particularly limited as long as it is a light-transmitting material having a refractive index lower than that of the anode 2.
  • the material of the anode 2 is indium tin oxide (ITO (refractive index 1.82)), for example, spin-on glass (SOG (refractive index 1.25)), magnesium fluoride (MgF 2 (refractive index 1.38). )), Metal fluorides such as polytetrafluoroethylene (PTFE (refractive index 1.35)), silicon dioxide (SiO 2 (refractive index 1.45)), various low melting glass, various Examples include porous substances.
  • the thickness of the diffractive lens 5 is not limited, but is, for example, 10 to 2000 nm, and preferably 50 to 1000 nm.
  • the cathode 4 has a plurality of radiation starting points 4a periodically arranged on the surface 4A on the organic layer side.
  • the radiation starting point portion 4a is preferably arranged at a position overlapping the diffraction lens 5 in plan view.
  • the cathode 4 is an electrode for injecting electrons into the light emitting layer. It is preferable to use a material made of a metal, an alloy, a conductive compound, or a mixture thereof having a low work function, and the work function is 1.9 eV or more so that the difference from the LUMO (Lowest Unoccupied Molecular Orbital) level does not become excessive. It is preferable to use a voltage of 5 eV or less. Examples of such materials include simple substances such as Au, Ag, Cu, Zn, Al, Mg, alkali metals and alkaline earth metals, alloys of Au and Ag, alloys of Ag and Cu, and alloys such as brass. It is done.
  • the cathode 4 may have a laminated structure of two or more layers.
  • the thickness of the cathode 4 is not limited, but is, for example, 30 nm to 1 ⁇ m, and preferably 50 to 500 nm. If the thickness of the cathode 4 is less than 30 nm, the sheet resistance increases and the driving voltage rises. If the thickness of the cathode 4 is greater than 1 ⁇ m, heat and radiation damage during film formation and mechanical damage due to film stress accumulate in the electrode and the organic layer.
  • the radiation starting point portion 4a has a concave shape, but is not limited thereto, and may be a convex shape or an uneven shape. Each shape of the radiation starting point portion 4a when viewed in a plan view may be any of a line-shaped unevenness, a dot-shaped unevenness (unevenness that is discretely arranged), and the like.
  • One radiation starting point portion 4a (unit structure of the radiation starting point portion) may be composed of one concavo-convex structure or a plurality of concavo-convex structures.
  • One radiation starting point is preferably smaller than the size of the diffractive lens in plan view.
  • the distance (pitch) between the center lines of the adjacent radiation starting point portions 4a is preferably 10 ⁇ m or less at which SPP mode light can propagate. By setting such a pitch, before the SPP mode light is dissipated as heat, the SPP mode light can be scattered by the radiation starting point portion 4a and re-radiated as propagating light. It is preferable that the diffractive lens is provided so that the center thereof is disposed on the center line of the radiation starting point in plan view. In this case, the pitch of the radiation starting point portion 4a is the same as the pitch of the diffraction lens 5.
  • the organic layer 3 may include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and the like in addition to a light emitting layer (organic light emitting layer) made of an organic EL material.
  • the hole injection layer is a layer that assists hole injection from the anode 2 to the organic layer 3.
  • Such a hole injection layer is preferably a material that injects holes into the light emitting layer with lower electric field strength.
  • the material for forming the hole injection layer is not particularly limited as long as it can perform the above functions, and any material can be selected from known materials.
  • the hole transport layer is a layer that transports holes to the light emitting region, and has a high hole mobility and a small ionization energy of usually 5.5 eV or less.
  • the material to be formed as such a hole transport layer is not particularly limited as long as it has the above function, and any material can be selected and used from known materials.
  • the electron injection layer is a layer that assists electron injection from the cathode 4 to the organic layer 3.
  • Such an electron injection layer is preferably a material that injects electrons into the organic layer 3 with lower electric field strength.
  • the material to be formed is not particularly limited as long as it can perform the above functions, and any material can be selected and used from known materials.
  • the electron transport layer is a layer that transports electrons to the light emitting region and has a high electron mobility. The material for forming such an electron transport layer is not particularly limited as long as it can perform the above function, and any material can be selected and used from known materials.
  • the organic layer 3 may be formed by a dry process such as an evaporation method or a transfer method, or may be formed by a wet process such as a spin coating method, a spray coating method, a die coating method, or a gravure printing method.
  • the thickness of the organic layer 3 is not limited, but is, for example, 50 to 2000 nm, and preferably 100 to 1000 nm. If the thickness of the organic layer 3 is less than 50 nm, quenching other than SPP coupling by metal, such as reduction of internal QE due to punch-through current or lossy surface coupling, occurs. When the thickness of the organic layer 3 is greater than 1000 nm, the drive voltage increases.
  • the light (arrow A1) traveling to the cathode 4 side is captured by the surface 4A of the cathode 4 and becomes SPP mode light.
  • the SPP mode light moves along the surface 4A (arrow A2) and is emitted from the radiation starting point 4a1 (4a), and becomes a spherical wave or a cylindrical wave centered on the radiation starting point.
  • the light extracted as the spherical wave or cylindrical wave passes through the organic layer 3 and the like (arrows B1, B2, B3) and is extracted out of the substrate.
  • the light B1 is light that travels perpendicularly to the substrate toward the substrate, and the organic layer 3 and the anode 2 At this interface and the interface between the anode 2 and the substrate 1, the light passes through the dielectric layer 7 and the substrate 1 without being refracted, and is taken out to the outside.
  • the light B2 and the light B3 are diffracted by the diffractive lens 5 so as to be condensed at the focal point on the center line C1 (see FIG. 1) of the radiation starting point portion 4a1 (4a).
  • the incident angle on the substrate 1 is changed to a small angle due to diffraction by the diffraction lens 5.
  • the light is incident at an angle greater than the critical angle at the interface between the substrate (eg, glass) and air, total reflection occurs.
  • the incident angle on the substrate 1 is changed to a small angle by the diffraction by the diffractive lens 5, the light that can avoid total reflection at the interface between the substrate and air is increased, and the light extraction efficiency is improved. That is, by having a configuration including the diffractive lens 5, light extraction efficiency is improved.
  • the organic EL device of the present invention even if the light emitted from the light emitting layer included in the organic layer is captured as SPP mode light on the cathode surface, the SPP mode light is emitted at the radiation starting point on the cathode surface. Can be taken out. Further, the light extracted from the cathode surface can be refracted in the front direction of the substrate by the diffraction lens 5 to increase the amount of light extracted in the front direction of the substrate.
  • FIG. 4 shows a schematic plan view of an example in which the degree of density of the annular zone differs depending on the interval of the annular zone of the diffractive lens.
  • (A) is a rough case (large interval)
  • (c) is a dense case (small interval)
  • (b) is an intermediate case.
  • FIG. 5A and 5B show a cross-sectional schematic view and FIG. 5B a schematic plan view when the phase of the annular zone 5a of the diffractive lens 5 and the annular zone 2a of the anode 2 are reversed (reverse phase).
  • the case of the opposite phase is a case where the positions of the annular portion 5a and the annular portion 2a are interchanged in FIG.
  • the annular zone 5 a of the diffractive lens 5 occupies the circular central portion of the diffractive lens 5.
  • the center of the annular zone 5 a of the diffractive lens 5 occupying the center of the circle is arranged on the center line of the radiation starting point 4 a of the cathode 4.
  • the case of FIG. 1 is called “in-phase”.
  • the annular zone 2 a of the anode 2 occupies the circular center portion, and the center of the annular zone 2 a of the anode 2 occupying the circular center portion is the radiation origin portion of the cathode 4. 4a is arranged on the center line.
  • the “center of the annular zone 5a of the diffractive lens 5 occupying the circular center” is also the “annular zone 2a of the anode 2 occupying the circular central portion in the case of“ in phase ”.
  • “Center of” is also “center of diffraction lens”.
  • the width (interval) of the annular zone 5a is formed so as to decrease from the center of the diffractive lens 5 to the periphery. It is preferable.
  • the annular zone 5a By forming the annular zone 5a in this way, the light incident on the outer periphery of the diffractive lens is bent more greatly (for example, the incident light beam B3 than B2 in FIG. 3), and the lens has a condensing function.
  • the radiation starting point and the diffractive lens arranged at the overlapping position are close to each other (for example, when the radiation starting point 4a and the diffractive lens 5 are close to each other through only the organic layer 3 as shown in FIG.
  • the diffraction lens of the organic EL element of the present invention may be provided at any position as long as it is on the opposite side of the organic layer from the cathode.
  • the diffractive lens is provided in the anode.
  • the diffractive lens may be provided in another layer or component such as in the organic layer or in the substrate, or may be provided in the interface between the layers.
  • a configuration provided on the outer surface of the substrate may be employed.
  • an organic EL element according to another embodiment of the present invention shown in FIG. 6 is an example of a configuration in which a diffraction lens 15 is provided between the substrate 1 and the anode 2.
  • the diffractive lens 15 is formed such that dielectric ring zones 15a having a high refractive index and dielectric ring zones 15b having a low refractive index are alternately arranged.
  • An anti-phase configuration in which the refractive index of the dielectric annular zone 15a is low and the refractive index of the annular zone 15b is higher than that may be used.
  • the organic EL element according to still another embodiment of the present invention shown in FIG. 7 is an example of a configuration in which the diffraction lens 25 is provided on the outer surface 1A of the substrate 1.
  • the diffractive lens 25 is formed such that dielectric ring zones 25a having a high refractive index and dielectric ring zones 25b having a low refractive index are alternately arranged.
  • An antiphase configuration may be employed in which the refractive index of the dielectric annular zone 25a is low and the refractive index of the annular zone 25b is higher than that.
  • FIG. 8 is a diagram illustrating an example of an image display device including the organic EL element.
  • the image display device 100 shown in FIG. 8 is a so-called passive matrix image display device.
  • an anode wiring 104, an anode auxiliary wiring 106, a cathode wiring 108, an insulating film 110, a cathode partition 112, a sealing plate 116, and a sealing material 118 are provided.
  • a plurality of anode wirings 104 are formed on the substrate 1 of the organic EL element 10.
  • the anode wirings 104 are arranged in parallel at a constant interval.
  • the anode wiring 104 is made of a transparent conductive film, and for example, ITO (Indium Tin Oxide) can be used.
  • the thickness of the anode wiring 104 can be set to 100 nm to 150 nm, for example.
  • An anode auxiliary wiring 106 is formed on the end of each anode wiring 104.
  • the anode auxiliary wiring 106 is electrically connected to the anode wiring 104. With this configuration, the anode auxiliary wiring 106 functions as a terminal for connecting to the external wiring on the end side of the substrate 1.
  • the anode auxiliary wiring 106 is made of a metal film having a thickness of 500 nm to 600 nm, for example.
  • a plurality of cathode wirings 108 are provided on the organic EL element 10.
  • the plurality of cathode wirings 108 are arranged so as to be parallel to each other and orthogonal to the anode wiring 104.
  • Al or an Al alloy can be used for the cathode wiring 108.
  • the thickness of the cathode wiring 108 is, for example, 100 nm to 150 nm.
  • a cathode auxiliary wiring (not shown) is provided at the end of the cathode wiring 108, similarly to the anode auxiliary wiring 106 for the anode wiring 104, and is electrically connected to the cathode wiring 108. Therefore, a current can flow between the cathode wiring 108 and the cathode auxiliary wiring.
  • the organic EL element 10 is located between the anode wiring 104 and the cathode wiring 108 in the opening 120. In this case, the anode 2 of the organic EL element 10 is in contact with the anode wiring 104 and the cathode 4 is in contact with the cathode wiring 108.
  • the thickness of the organic EL element 10 can be set to, for example, 150 nm to 200 nm.
  • a plurality of cathode partition walls 112 are formed on the insulating film 110 along a direction perpendicular to the anode wiring 104.
  • the cathode partition 112 plays a role for spatially separating the plurality of cathode wirings 108 so that the wirings of the cathode wirings 108 do not conduct with each other. Accordingly, the cathode wiring 108 is disposed between the adjacent cathode partition walls 112.
  • the size of the cathode partition 112 for example, the one having a height of 2 ⁇ m to 3 ⁇ m and a width of 10 ⁇ m can be used.
  • the substrate 1 is bonded through a sealing plate 116 and a sealing material 118. Thereby, the space in which the organic EL element 10 is provided can be sealed, and the organic EL element 10 can be prevented from being deteriorated by moisture in the air.
  • a sealing plate 116 for example, a glass substrate having a thickness of 0.7 mm to 1.1 mm can be used.
  • a current can be supplied to the organic EL element 10 via the anode auxiliary wiring 106 and the cathode auxiliary wiring (not shown) by a driving device (not shown) to cause the light emitting layer to emit light. Then, light can be emitted from the substrate 1 through the substrate 1.
  • An image can be displayed on the image display device 100 by controlling the light emission and non-light emission of the organic EL element 10 corresponding to the above-described pixel by the control device.
  • FIG. 9 is a diagram illustrating an example of an illumination device including the organic EL element 10 described above.
  • the lighting device 200 shown in FIG. 9 includes the organic EL element 10 described above, and a terminal 202 that is installed adjacent to the substrate 1 (see FIG. 1) of the organic EL element 10 and connected to the anode 2 (see FIG. 1).
  • the terminal 203 is connected to the cathode 4 (see FIG. 1), and the lighting circuit 201 is connected to the terminal 202 and the terminal 203 to drive the organic EL element 10.
  • the lighting circuit 201 has a DC power supply (not shown) and a control circuit (not shown) inside, and supplies a current between the anode layer 2 and the cathode 4 of the organic EL element 10 through the terminal 202 and the terminal 203. Then, the organic EL element 10 is driven, the light emitting layer emits light, light is emitted from the substrate 1 through the support substrate 101, and is used as illumination light.
  • the light emitting layer may be made of a light emitting material that emits white light, and each of the organic EL elements 10 using light emitting materials that emit green light (G), blue light (B), and red light (R). A plurality of them may be provided so that the combined light is white.
  • the manufacturing method of the organic EL element of this invention is demonstrated.
  • a method for manufacturing the organic EL element shown in FIG. 1 will be described.
  • the method for forming the anode 2 is not particularly limited, and for example, a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, an ion plating method, a CVD method, or the like can be used.
  • the surface treatment includes high-frequency plasma treatment, sputtering treatment, corona treatment, UV ozone irradiation treatment, ultraviolet irradiation treatment, oxygen plasma treatment, and the like.
  • anode buffer layer (not shown) instead of or in addition to the surface treatment of the surface treatment of the anode 2.
  • anode buffer layer is applied by a wet process, spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating
  • the film can be formed using a coating method such as a spray method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, or an inkjet printing method.
  • the anode buffer layer When the anode buffer layer is produced by a dry process, the anode buffer layer can be formed by using a plasma treatment or the like exemplified in Japanese Patent Application Laid-Open No. 2006-303412.
  • a method of forming a film of a single metal, a metal oxide, a metal nitride, or the like can be given.
  • an electron beam evaporation method, a sputtering method, a chemical reaction method, a coating method, a vacuum evaporation method, or the like can be used.
  • a method using photolithography as described in Patent Document 10 can be used to form the annular zone 2 a of the anode 2.
  • a positive resist solution is applied onto the anode 2, and the excess resist solution is removed by spin coating or the like to form a resist layer.
  • the resist layer has a predetermined corresponding to the annular zone 2a.
  • the pattern is exposed.
  • the resist layer in the exposed pattern portion is removed using a developer.
  • the surface of the anode 2 is exposed corresponding to the exposed pattern portion.
  • the exposed portion of the anode 2 is removed by etching to form the annular portion 2a.
  • etching method either dry etching or wet etching can be used.
  • the shape of the annular zone 2a can be controlled by combining isotropic etching and anisotropic etching.
  • dry etching reactive ion etching (RIE: Reactive Ion Etching) using inductively coupled plasma or capacitively coupled plasma can be used.
  • RIE reactive ion etching
  • wet etching a solution of a metal salt such as an iron chloride aqueous solution or a method of immersing in an acid such as dilute hydrochloric acid or dilute sulfuric acid can be used.
  • a ring zone portion 5 a made of a dielectric is formed to form a diffraction lens 5.
  • the diffractive lens 5 is configured to fill between adjacent ring zones 2a.
  • the formation of the diffractive lens 5 is not limited to the formation of the anode 2.
  • a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, an ion plating method, a CVD method, or the like can be used.
  • an organic layer 3 including a light emitting layer made of an organic EL material is formed on the anode 2 and the diffraction lens 5.
  • polishing or etching for flattening may be appropriately performed.
  • a conventionally known method can be used and is not limited. For example, a method such as a vacuum deposition method, a spin coating method, a casting method, or an LB method can be used.
  • a concavo-convex structure is formed on the surface of the organic layer 3 so as to have a convex portion 3b at a position corresponding to the radiation starting point portion 4a of the cathode 4 to be formed later.
  • a method using photolithography can be used for forming the unevenness. To do this, first, a positive resist solution is applied on the organic layer 3, and the excess resist solution is removed by spin coating or the like to form a resist layer.
  • the resist layer has a predetermined corresponding to the radiation starting point part 4a.
  • the pattern is exposed.
  • the resist layer 11a in the exposed pattern portion is removed using a developer. As a result, the surface of the organic layer 3 is exposed corresponding to the exposed pattern portion.
  • the exposed portion of the organic layer 3 is removed by etching to form a convex portion 3b.
  • etching either dry etching or wet etching can be used.
  • the shape of the convex portion 3b can be controlled by combining isotropic etching and anisotropic etching.
  • dry etching reactive ion etching (RIE: Reactive Ion Etching) using inductively coupled plasma or capacitively coupled plasma, ashing treatment using oxygen plasma, or the like can be used.
  • RIE reactive ion etching
  • wet etching there can be used a method of immersing in various organic solvents in addition to dilute hydrochloric acid and dilute sulfuric acid.
  • a concavo-convex structure including the convex portions 3 b corresponding to the radiation starting point portions 4 a can be formed on the surface of the organic layer 3 corresponding to the pattern. Since photolithography has alignment accuracy up to about 1 ⁇ m, it can be formed such that the radiation starting point of the cathode and the diffraction lens overlap in plan view.
  • a cathode material is vapor-deposited on the organic layer 3, and the cathode 4 having the radiation starting point portion 4a is formed by following the uneven structure of the organic layer 3.
  • a diffractive lens is formed by alternately forming two types of dielectric layers on a substrate 1 by a known film forming technique using a photolithography technique. 15 can be formed. About another structure, it can form by the method similar to the above-mentioned manufacturing method.
  • the organic EL element shown in FIG. 7 for example, a known film forming technique is used in which two types of dielectric layers are alternately formed on the outer surface of the substrate by using a photolithography technique.
  • the diffractive lens 25 can be formed by forming a film. About another structure, it can form by the method similar to the above-mentioned manufacturing method.
  • FIGS. 10 and 11 show a finite difference time domain (FDTD: FDTD) in the case of an embodiment including a diffractive lens in the anode as shown in FIG. 1 as an example in order to confirm the effect of the organic EL element of the present invention.
  • the result of computer simulation calculation using the light intensity of light into the substrate with respect to the total radiation intensity as the light extraction efficiency using the Finite Difference Time Domain Method) method is shown.
  • the FDTD method is an analysis method for tracking the time change of the electromagnetic field at each point in space by differentiating Maxwell's equation describing the time change of the electromagnetic field spatially and temporally.
  • the model of the diffraction lens used in the simulation has the same width of the annular zone and the density of the annular zone is rough.
  • a simulation of a bottom emission type organic EL element is performed, but the top emission type organic EL element also differs only in the direction of light extraction, and exhibits the effects of the present invention.
  • “cathode concavity and convexity + diffraction lens (coarse)” indicates that the cathode radiation starting point portion and the diffraction lens (diameter L (see FIG. 2) is 3.08 ⁇ m) are the same as those described above. This is the case of the configuration of “phase”.
  • the diffractive lens includes four ring zones having a width of 440 nm (the number includes both 2a and 5a, and the central portion is also counted as one ring zone. The same applies to the following. .) This is the case.
  • the “cathode concavity and convexity + diffractive lens (intermediate)” shows a case where the radiation starting point of the cathode and the diffraction lens (diameter L (see FIG. 2) is 3.63 ⁇ m) are in the above-mentioned “in phase”. It is. In this case, the diffractive lens has six ring zones having a width of 330 nm.
  • the “cathode concavity and convexity + diffraction lens (multiple)” shows a case where the radiation starting point of the cathode and the diffraction lens (diameter L (see FIG. 2) is 3.3 ⁇ m) are in the above “in phase” It is.
  • the diffractive lens has eight ring zones with a width of 220 nm.
  • “reverse phase” indicates that the emission starting point of the cathode and the diffraction lens (diameter L (see FIG. 2) is 3.08 ⁇ m) are the above-mentioned “cathode unevenness + diffraction lens (coarse)”.
  • the diffractive lens has four ring zones having a width of 440 nm.
  • diffractive lens only indicates a case where a diffractive lens having the same configuration as “cathode unevenness + diffractive lens (rough)” is included, but the cathode does not have a radiation starting point portion. These are listed as comparative examples.
  • standard indicates a case in which a layered cathode without an emission starting portion, an organic layer, and an anode are laminated in order and does not have a diffractive lens (solid structure). It is what I put.
  • FIG. 12 is a cross-sectional view showing a model structure of the organic EL element of the embodiment used in the simulation.
  • the structure is the same as in FIG.
  • the substrate 1 is made of glass, and a refractive index of 1.5 is used.
  • the anode 2 is made of ITO, the refractive index is 1.82 + 0.009i at 550 nm, and other wavelengths are extrapolated by the Lorentz model.
  • the diffractive lens 5 is made of SOG, and a refractive index of 1.25 is used. As the refractive index of the organic layer 3, 1.72 was used.
  • the cathode 4 is made of aluminum (Al), the refractive index is 0.649 + 4.32i at 550 nm, and the other wavelengths are extrapolated by the Drude model. Thereafter, unless otherwise noted, the above values are used for the refractive indexes of glass, organic layer, and aluminum, respectively.
  • the layer thicknesses of the anode 2 (or the diffractive lens 5), the layered portion 3a of the organic layer 3, and the cathode 4 were 150 nm, 150 nm, and 150 nm, respectively.
  • the diffractive lenses 5 are arranged in a hexagonal fine shape in plan view so that there is no gap between adjacent diffractive lenses.
  • the radiation starting point 4a is arranged at a position overlapping all the diffraction lenses 5, and the center of the diffraction lens 5 is arranged on the center line of the radiation starting point 4a in plan view.
  • the depth of the recess was 100 nm and the diameter was 100 nm.
  • the light extraction efficiency with a wavelength of 540 nm or less is greatly reduced in the “standard” configuration.
  • the “diffractive lens only” configuration has low light extraction efficiency over the entire wavelength range.
  • the “cathode unevenness + diffractive lens (rough)” configuration, the “cathode unevenness + diffraction lens (intermediate)” configuration, and the “cathode unevenness + diffraction lens (multiple)” configuration which are embodiments of the present invention
  • the light extraction efficiency is higher in the entire wavelength range than in the case of the “diffractive lens only” configuration.
  • the light extraction efficiency for wavelengths below 540 nm is improved compared to the “standard” configuration.
  • the “cathode concavity and convexity + diffraction lens (multiple)” configuration improved light extraction efficiency by +10 several percent to 2 times or more over the entire wavelength range as compared with the “diffractive lens only” configuration.
  • the “standard” configuration it is similar in the range of 570 nm to 620 nm, but is significantly superior in other wavelength ranges.
  • an improvement of about + 30% to 10 times was observed at 450 nm to 550 nm, and an improvement of + 10% or more was observed at 700 nm to 750 nm.
  • the light extraction efficiency is greatly improved by combining the “diffractive lens” configuration and the “cathode unevenness” configuration.
  • the roughness of the annular zone of the diffractive lens increases, that is, the “cathode uneven + diffractive lens (multiple)” configuration, the “cathode uneven + diffractive lens (middle)” configuration, and the “cathode uneven + diffractive lens (rough)” configuration.
  • the degree of improvement decreases.
  • the “reverse phase” configuration improves the light extraction efficiency over the “diffractive lens only” configuration in the wavelength range of 450 nm to 670 nm, and improves over the “standard” configuration in the wavelength range of 540 nm or less.
  • the “cathode unevenness + diffractive lens (multiple)” configuration shows an improvement in light extraction efficiency of + 10% or more in the entire wavelength range as compared with the “diffractive lens only” configuration. It was. Improvements were seen in the wavelength range of 500 nm to 680 nm compared to the “standard” configuration. The “diffractive lens only” configuration had lower light extraction efficiency over the entire wavelength range than the “standard” configuration. Thus, it has been found that the light extraction efficiency is greatly improved by combining the “diffractive lens” configuration and the “cathode unevenness” configuration. This effect is theoretically difficult to predict and can only be known after simulation.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un élément électroluminescent organique (10) qui est pourvu, dans cet ordre, sur un substrat (1), d'anodes (2), d'une couche organique (3) qui comprend une couche électroluminescente qui comprend un matériau électroluminescent organique, et d'une cathode (4). La cathode (4) comporte une pluralité de sections à point de départ d'émission (4a) périodiquement disposées sur une surface (4A) sur le côté couche organique. Une pluralité de lentilles à diffraction (5) est prévue entre le substrat (1) et la couche organique (3). Les sections à point de départ d'émission (4a) sont caractérisées en ce qu'elles sont disposées dans des positions qui chevauchent les lentilles à diffraction (5) en vue en plan.
PCT/JP2013/081820 2012-11-27 2013-11-26 Élément électroluminescent organique, et dispositif d'affichage d'image et dispositif d'éclairage équipés dudit élément électroluminescent organique WO2014084220A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020060624A (ja) * 2018-10-05 2020-04-16 セイコーエプソン株式会社 画像表示モジュール、ホログラムレンズアレイおよび画像表示装置
WO2023095622A1 (fr) * 2021-11-26 2023-06-01 ソニーセミコンダクタソリューションズ株式会社 Élément émetteur de lumière, dispositif d'affichage et appareil électronique

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281417A (ja) * 2000-03-29 2001-10-10 Fuji Photo Film Co Ltd 屈折率分布レンズ、レンズアレイ、及び光デバイス
KR20070102944A (ko) * 2006-04-17 2007-10-22 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 전자 기기
US20120032585A1 (en) * 2010-08-06 2012-02-09 Canon Kabushiki Kaisha Light emitting element
WO2012060404A1 (fr) * 2010-11-02 2012-05-10 王子製紙株式会社 Diode électroluminescente organique, procédé de fabrication de celle-ci, dispositif d'affichage d'images et dispositif d'éclairage
EP2498580A1 (fr) * 2011-03-08 2012-09-12 Kabushiki Kaisha Toshiba Dispositif électroluminescent organique et appareil d'éclairage
WO2012127746A1 (fr) * 2011-03-23 2012-09-27 パナソニック株式会社 Dispositif à électroluminescence organique
WO2012147759A1 (fr) * 2011-04-27 2012-11-01 Ｊｘ日鉱日石エネルギー株式会社 Substrat transparent d'extraction de lumière pour éléments électroluminescents organiques et éléments électroluminescents organiques mis en œuvre avec ceux-ci

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281417A (ja) * 2000-03-29 2001-10-10 Fuji Photo Film Co Ltd 屈折率分布レンズ、レンズアレイ、及び光デバイス
KR20070102944A (ko) * 2006-04-17 2007-10-22 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 전자 기기
CN101059925A (zh) * 2006-04-17 2007-10-24 精工爱普生株式会社 电光学装置及电子机器
JP2007287462A (ja) * 2006-04-17 2007-11-01 Seiko Epson Corp 電気光学装置および電子機器
TW200805646A (en) * 2006-04-17 2008-01-16 Seiko Epson Corp Electro optical device and electronic apparatus
US20080037084A1 (en) * 2006-04-17 2008-02-14 Seiko Epson Corporation Electro optical device and electronic apparatus
US20120032585A1 (en) * 2010-08-06 2012-02-09 Canon Kabushiki Kaisha Light emitting element
JP2012038542A (ja) * 2010-08-06 2012-02-23 Canon Inc 発光素子
JP2013157340A (ja) * 2010-11-02 2013-08-15 Oji Holdings Corp 有機発光ダイオードおよびその製造方法、画像表示装置および照明装置
WO2012060404A1 (fr) * 2010-11-02 2012-05-10 王子製紙株式会社 Diode électroluminescente organique, procédé de fabrication de celle-ci, dispositif d'affichage d'images et dispositif d'éclairage
TW201234583A (en) * 2010-11-02 2012-08-16 Oji Paper Co Organic light emitting diode and method for producing the same, image display device and lighting device
EP2637480A1 (fr) * 2010-11-02 2013-09-11 Oji Holdings Corporation Diode électroluminescente organique, procédé de fabrication de celle-ci, dispositif d'affichage d'images et dispositif d'éclairage
EP2498580A1 (fr) * 2011-03-08 2012-09-12 Kabushiki Kaisha Toshiba Dispositif électroluminescent organique et appareil d'éclairage
KR20120102482A (ko) * 2011-03-08 2012-09-18 가부시끼가이샤 도시바 유기 전계 발광 소자 및 조명 장치
CN102683610A (zh) * 2011-03-08 2012-09-19 株式会社东芝 有机电致发光器件和照明设备
JP2012186107A (ja) * 2011-03-08 2012-09-27 Toshiba Corp 有機電界発光素子及び照明装置
TW201238109A (en) * 2011-03-08 2012-09-16 Toshiba Kk Organic electroluminescent device and illumination apparatus
US20120229020A1 (en) * 2011-03-08 2012-09-13 Kabushiki Kaisha Toshiba Organic electroluminescent device and illumination apparatus
WO2012127746A1 (fr) * 2011-03-23 2012-09-27 パナソニック株式会社 Dispositif à électroluminescence organique
JP2012204019A (ja) * 2011-03-23 2012-10-22 Panasonic Corp 有機エレクトロルミネッセンス素子
TW201301600A (zh) * 2011-03-23 2013-01-01 Panasonic Corp 有機電致發光元件
WO2012147759A1 (fr) * 2011-04-27 2012-11-01 Ｊｘ日鉱日石エネルギー株式会社 Substrat transparent d'extraction de lumière pour éléments électroluminescents organiques et éléments électroluminescents organiques mis en œuvre avec ceux-ci
TW201306343A (zh) * 2011-04-27 2013-02-01 Jx Nippon Oil & Energy Corp 有機電激發光元件用之光取出透明基板及使用此之有機電激發光元件

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020060624A (ja) * 2018-10-05 2020-04-16 セイコーエプソン株式会社 画像表示モジュール、ホログラムレンズアレイおよび画像表示装置
JP7192373B2 (ja) 2018-10-05 2022-12-20 セイコーエプソン株式会社 画像表示モジュール、ホログラムレンズアレイおよび画像表示装置
WO2023095622A1 (fr) * 2021-11-26 2023-06-01 ソニーセミコンダクタソリューションズ株式会社 Élément émetteur de lumière, dispositif d'affichage et appareil électronique

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