WO2014076613A1 - Procédé de formation de motifs de graphène et matériaux de type graphène - Google Patents

Procédé de formation de motifs de graphène et matériaux de type graphène Download PDF

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Publication number
WO2014076613A1
WO2014076613A1 PCT/IB2013/059969 IB2013059969W WO2014076613A1 WO 2014076613 A1 WO2014076613 A1 WO 2014076613A1 IB 2013059969 W IB2013059969 W IB 2013059969W WO 2014076613 A1 WO2014076613 A1 WO 2014076613A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
pattern
dimensional crystal
crystal layer
graphene
Prior art date
Application number
PCT/IB2013/059969
Other languages
English (en)
Inventor
Kamal Asadi
Cornelis Eustatius Timmering
Dagobert Michel De Leeuw
Johannes Franciscus Maria Cillessen
Marius Gabriel Ivan
Original Assignee
Koninklijke Philips N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips N.V. filed Critical Koninklijke Philips N.V.
Publication of WO2014076613A1 publication Critical patent/WO2014076613A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

L'invention concerne un procédé de formation de motifs sur une couche cristalline bidimensionnelle telle, que par exemple une couche de graphène, une structure comprenant une couche cristalline bidimensionnelle à motifs et un dispositif d'éclairage comprenant la structure. Les motifs de la couche cristalline bidimensionnelle sont formés par dépôt d'une couche métallique (110) sur la couche cristalline bidimensionnelle (120), par dépôt d'une couche de masquage (130) sur la couche métallique, par création d'un motif (140) dans la couche de masquage, par transfert du motif créé dans la couche de masquage sur la couche métallique et par transfert du motif créé dans la couche métallique sur la couche cristalline bidimensionnelle.
PCT/IB2013/059969 2012-11-14 2013-11-07 Procédé de formation de motifs de graphène et matériaux de type graphène WO2014076613A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261726075P 2012-11-14 2012-11-14
US61/726,075 2012-11-14

Publications (1)

Publication Number Publication Date
WO2014076613A1 true WO2014076613A1 (fr) 2014-05-22

Family

ID=49585466

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2013/059969 WO2014076613A1 (fr) 2012-11-14 2013-11-07 Procédé de formation de motifs de graphène et matériaux de type graphène

Country Status (1)

Country Link
WO (1) WO2014076613A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020167685A1 (fr) * 2019-02-14 2020-08-20 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Films métalliques à orientation cristallographique ayant des couches cristallines bidimensionnelles
EP3723122A1 (fr) * 2019-04-10 2020-10-14 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Support de composant comprenant une structure à double couche
US11033862B2 (en) 2013-05-01 2021-06-15 Koninklijke Philips N.V. Method of manufacturing partially freestanding two-dimensional crystal film and device comprising such a film
WO2022236380A1 (fr) * 2021-05-14 2022-11-17 Commonwealth Scientific And Industrial Research Organisation Dispositif permettant d'interagir avec un rayonnement électromagnétique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1482771A2 (fr) * 2003-05-30 2004-12-01 Dowa Mining Co., Ltd. Panneau à circuit métal/céramique et son procédé de fabrication
US20110220865A1 (en) * 2010-03-11 2011-09-15 Kabushiki Kaisha Toshiba Transistor and manufacturing method thereof
US20120085991A1 (en) * 2010-10-12 2012-04-12 International Business Machines Corporation Graphene nanoribbons, method of fabrication and their use in electronic devices
WO2012094045A2 (fr) 2010-10-11 2012-07-12 William Marsh Rice University Retrait de couches de graphène couche par couche

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1482771A2 (fr) * 2003-05-30 2004-12-01 Dowa Mining Co., Ltd. Panneau à circuit métal/céramique et son procédé de fabrication
US20110220865A1 (en) * 2010-03-11 2011-09-15 Kabushiki Kaisha Toshiba Transistor and manufacturing method thereof
WO2012094045A2 (fr) 2010-10-11 2012-07-12 William Marsh Rice University Retrait de couches de graphène couche par couche
US20120085991A1 (en) * 2010-10-12 2012-04-12 International Business Machines Corporation Graphene nanoribbons, method of fabrication and their use in electronic devices

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHUANXIN LIAN ET AL: "Quantum transport in patterned graphene nanoribbons", SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, 2009. ISDRS '09. INTERNATIONAL, IEEE, PISCATAWAY, NJ, USA, 9 December 2009 (2009-12-09), pages 1 - 2, XP031919907, ISBN: 978-1-4244-6030-4, DOI: 10.1109/ISDRS.2009.5378286 *
GALLAGHER P ET AL: "Disorder-induced gap behavior in graphene nanoribbons", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) AMERICAN PHYSICAL SOCIETY BY AIP USA, vol. 81, no. 11, 5 March 2010 (2010-03-05), XP002719076, ISSN: 1098-0121 *
KUMAR S ET AL: "Reliable processing of graphene using metal etchmasks", NANOSCALE RESEARCH LETTERS SPRINGER-VERLAG USA, vol. 6, December 2011 (2011-12-01), XP002719074, ISSN: 1931-7573 *
YE LU ET AL: "High-On/Off-Ratio Graphene Nanoconstriction Field-Effect Transistor", SMALL WILEY-VCH VERLAG GMBH GERMANY, vol. 6, no. 23, 6 December 2010 (2010-12-06), pages 2748 - 2754, XP002719075, ISSN: 1613-6810 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11033862B2 (en) 2013-05-01 2021-06-15 Koninklijke Philips N.V. Method of manufacturing partially freestanding two-dimensional crystal film and device comprising such a film
WO2020167685A1 (fr) * 2019-02-14 2020-08-20 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Films métalliques à orientation cristallographique ayant des couches cristallines bidimensionnelles
US11694895B2 (en) 2019-02-14 2023-07-04 The Government of the United States of America, as represented by the Secretarv of the Navy Method and use for low-temperature epitaxy and film texturing between a two-dimensional crystalline layer and metal film
EP3723122A1 (fr) * 2019-04-10 2020-10-14 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Support de composant comprenant une structure à double couche
US11197367B2 (en) 2019-04-10 2021-12-07 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier comprising a double layer structure
WO2022236380A1 (fr) * 2021-05-14 2022-11-17 Commonwealth Scientific And Industrial Research Organisation Dispositif permettant d'interagir avec un rayonnement électromagnétique

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