WO2014069718A1 - Composition de film de sous-couche de réserve et procédé de formation de motif à l'aide de ladite composition de film de sous-couche de réserve - Google Patents

Composition de film de sous-couche de réserve et procédé de formation de motif à l'aide de ladite composition de film de sous-couche de réserve Download PDF

Info

Publication number
WO2014069718A1
WO2014069718A1 PCT/KR2013/000179 KR2013000179W WO2014069718A1 WO 2014069718 A1 WO2014069718 A1 WO 2014069718A1 KR 2013000179 W KR2013000179 W KR 2013000179W WO 2014069718 A1 WO2014069718 A1 WO 2014069718A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
substituted
unsubstituted
resist underlayer
underlayer film
Prior art date
Application number
PCT/KR2013/000179
Other languages
English (en)
Korean (ko)
Inventor
박유정
권효영
신승욱
이성재
조연진
윤용운
이철호
Original Assignee
제일모직 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제일모직 주식회사 filed Critical 제일모직 주식회사
Publication of WO2014069718A1 publication Critical patent/WO2014069718A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Definitions

  • a pattern forming method using the composition for resist underlayer films and the composition for resist underlayer films is a pattern forming method using the composition for resist underlayer films and the composition for resist underlayer films.
  • a typical lithographic technique involves forming a material layer on a semiconductor substrate, coating a photoresist layer thereon, exposing and developing a photoresist pattern, and then etching the material layer using the photoresist pattern as a mask. do.
  • a fine pattern may be formed by forming an underlayer called a resist underlayer between the material layer and the photoresist layer to be etched.
  • the resist underlayer film can be formed using a composition for resist underlayer films having high etching selectivity and sufficient resistance to multiple etching.
  • the resist underlayer film composition is important for determining exposure characteristics such as resolution, lithography speed and residue of the photoresist layer.
  • the composition for the resist underlayer film also requires adhesion with the photoresist layer in order to prevent collapse of the micronized photoresist pattern positioned thereon.
  • One embodiment provides a composition for a resist underlayer film capable of improving adhesion with a photoresist layer.
  • Another embodiment provides a pattern forming method using the resist underlayer film composition.
  • composition for a resist underlayer film comprising a polymer having a moiety represented by the following Chemical Formula 1, and a solvent.
  • R 1 and R 2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C7 to C20 arylalkyl group, substituted or unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or un
  • the polymer may be represented by the following formula (2).
  • R 1 and R 2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof ,
  • R 3 to R 5 are each independently hydrogen or a methyl group
  • R 6 to R 8 are different from each other, hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof ,
  • At least one of a, c and d is not 0,
  • At least one of R 6 to R 8 is a C1 to C30 alkyl group substituted with a hydroxy group, a C3 to C30 cycloalkyl group substituted with a hydroxy group, a C6 to C30 aryl group substituted with a hydroxy group, a C7 to C20 arylalkyl group substituted with a hydroxy group, a hydroxyl group A C1 to C20 heteroalkyl group substituted with a C2 to C30 heterocycloalkyl group substituted with a hydroxy group, a C2 to C30 heteroaryl group substituted with a hydroxy group, or a combination thereof,
  • At least one of R 6 to R 8 is a halogen substituted C1 to C30 alkyl group, halogen substituted C3 to C30 cycloalkyl group, halogen substituted C6 to C30 aryl group, halogen substituted C7 to C20 arylalkyl group, halogen substituted C1 to C20 heteroalkyl group, halogen substituted C2 to C30 heterocycloalkyl group, halogen substituted C2 to C30 heteroaryl group, halogen group or a combination thereof.
  • B may satisfy 0.05 ⁇ b ⁇ 0.95.
  • the polymer may have a weight average molecular weight of about 1,000 to 100,000 g / mol.
  • the polymer may have a weight average molecular weight of about 3,000 to 30,000 g / mol.
  • the polymer may be included in an amount of about 0.3 kPa to 20 kPa with respect to 100 parts by weight of the solvent.
  • the polymer may be included in an amount of about 0.3 kPa to 10 kPa with respect to 100 parts by weight of the solvent.
  • the resist underlayer film coating composition may further include at least one of a surfactant, an acid catalyst, and a crosslinking agent.
  • the surfactant, the acid catalyst and the crosslinking agent may be included in an amount of 0.001 to 3 parts by weight, respectively, based on 100 parts by weight of the composition for resist underlayer film.
  • the step of providing a material layer on a substrate applying the above-described composition for a resist underlayer film on the material layer, heat-treating the composition for the resist underlayer film to form a resist underlayer film, on the resist underlayer film Forming a photoresist layer, exposing and developing the photoresist layer to form a photoresist pattern, selectively removing the resist underlayer film using the photoresist pattern and exposing a portion of the material layer, And etching the exposed portion of the material layer.
  • Forming the resist underlayer film may be performed by a spin-on-coating method.
  • the resist underlayer film may have a thickness variation within about ⁇ 5%.
  • Adhesion with the photoresist layer may be improved to prevent collapse of the photoresist pattern during the patterning process.
  • substituted means that the hydrogen atom in the compound is a halogen atom (F, Br, Cl or I), hydroxy group, alkoxy group, nitro group, cyano group, amino group, azido group, amidino Group, hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or salt thereof, sulfonic acid group or salt thereof, phosphoric acid or salt thereof, C1 to C20 alkyl group, C2 to C20 alkenyl group, C2 to C2 C20 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C4 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to
  • hetero means containing one to three hetero atoms selected from N, O, S and P.
  • the resist underlayer film composition according to the embodiment includes a polymer having a moiety represented by the following Chemical Formula 1, and a solvent.
  • R 1 and R 2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C7 to C20 arylalkyl group, substituted or unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or un
  • the moiety represented by Chemical Formula 1 is a structure in which carbon of ⁇ -butyrolactone is directly bonded to the main chain portion of the polymer, thereby increasing the density of the polymer and providing structural stability.
  • the part represented by Chemical Formula 1 may be formed by polymerizing a monomer represented by Chemical Formula 1a.
  • R 1 and R 2 are as described above.
  • the polymer may be prepared by copolymerization of the monomer represented by Formula 1a with at least one photosensitive monomer.
  • the polymer may have a portion obtained from the monomer represented by Formula 1a and a photosensitive portion obtained from the photosensitive monomer.
  • the polymer when synthesizing a polymer from the monomer represented by Formula 1a and at least one selected from the first photosensitive monomer, the second photosensitive monomer, and the third photosensitive monomer, the polymer may be represented by the following Formula 2.
  • R 1 and R 2 are as described above.
  • R 3 to R 5 are each independently hydrogen or a methyl group
  • R 6 to R 8 are different from each other, hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof .
  • R 6 to R 8 is a C1 to C30 alkyl group substituted with a hydroxy group, a C3 to C30 cycloalkyl group substituted with a hydroxy group, a C6 to C30 aryl group substituted with a hydroxy group, a C7 to C20 arylalkyl group substituted with a hydroxy group, Or a C1 to C20 heteroalkyl group substituted with a hydroxy group, a C2 to C30 heterocycloalkyl group substituted with a hydroxy group, a C2 to C30 heteroaryl group substituted with a hydroxy group, or a combination thereof.
  • the crosslinking force can be improved at the time of forming a resist underlayer film.
  • At least one of R 6 to R 8 is a halogen substituted C1 to C30 alkyl group, halogen substituted C3 to C30 cycloalkyl group, halogen substituted C6 to C30 aryl group, halogen substituted C7 to C20 arylalkyl group, halogen substituted C1 to C20 heteroalkyl group, halogen substituted C2 to C30 heterocycloalkyl group, halogen substituted C2 to C30 heteroaryl group, halogen group or a combination thereof.
  • the mole fraction (b) of the part represented by Chemical Formula 1 may be about 0.05 kPa to 0.95 kPa.
  • the polymer may have a weight average molecular weight of about 1,000 to 100,000 g / mol. Within this range, the polymer may have a weight average molecular weight of about 3,000 to 30,000 g / mol. By having the weight average molecular weight of the said range, the solubility and coating property of the composition for resist underlayer films can be ensured.
  • the solvent is not particularly limited as long as it has sufficient solubility or dispersibility in the polymer, for example, propylene glycol, propylene glycol diacetate, methoxy propanediol, diethylene glycol, diethylene glycol butyl ether, tri (ethylene glycol) mono At least one selected from methyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone (or 'anone'), ethyl lactate, gamma-butyrolactone, and acetyl acetone. have.
  • the polymer may be included in an amount of about 0.3 kPa to 20 kPa with respect to 100 parts by weight of the solvent. Within this range, the polymer may be included in an amount of about 0.3 kPa to 10 parts by weight based on 100 parts by weight of the solvent. Since the polymer is included in the above range, the solubility of the polymer and the coatability at the time of forming the resist underlayer film may be improved.
  • the resist underlayer film composition may further include at least one of a surfactant, an acid catalyst, and a crosslinking agent.
  • the surfactant may be, for example, alkylbenzenesulfonic acid salt, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt and the like, but is not limited thereto.
  • the acid catalyst is preferably a heat activated acid catalyst.
  • an organic acid such as p-toluene sulfonic acid monohydrate
  • a thermal acid generator TAG having storage stability
  • the thermal acid generator is an acid generator that releases acid upon heat treatment, for example pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitro Benzyl tosylate, alkyl esters of euphonic acid, and the like.
  • the crosslinking agent may crosslink the repeating unit of the polymer by heating, and may include an amino resin such as an etherified amino resin; Glycoluril compounds such as compounds represented by the following formula (A); Bisepoxy compounds, such as a compound represented by following formula (B); Melamine or derivatives thereof such as N-methoxymethyl melamine, N-butoxymethyl melamine or melamine derivatives represented by the following general formula (C); Or mixtures thereof.
  • an amino resin such as an etherified amino resin
  • Glycoluril compounds such as compounds represented by the following formula (A)
  • Bisepoxy compounds such as a compound represented by following formula (B)
  • Melamine or derivatives thereof such as N-methoxymethyl melamine, N-butoxymethyl melamine or melamine derivatives represented by the following general formula (C); Or mixtures thereof.
  • the surfactant, the acid catalyst and the crosslinking agent may be included in an amount of about 0.001 to 3 parts by weight based on 100 parts by weight of the resist underlayer film composition. By including in the said range, solubility and crosslinkability can be ensured without affecting the optical characteristic of the composition for resist underlayer films.
  • the resist underlayer film composition includes a polymer having a structure in which carbon of ⁇ -butyrolactone is directly bonded to a portion represented by Chemical Formula 1, that is, a main chain portion of the polymer. Accordingly, the resist underlayer film formed from the composition for resist underlayer film may be a high density thin film having a high uniformity in thickness, and thus adhesion with a photoresist layer positioned on the resist underlayer film may be improved.
  • a method of forming a material layer on a substrate applying a composition for forming a resist underlayer film including the polymer and a solvent on the material layer, and heat treating the composition for forming a resist underlayer film to form a resist underlayer film.
  • Forming a photoresist layer on the resist underlayer film exposing and developing the photoresist layer to form a photoresist pattern, selectively removing the resist underlayer film using the photoresist pattern, and Exposing a portion of the material layer, and etching the exposed portion of the material layer.
  • the substrate may be, for example, a silicon wafer, a glass substrate or a polymer substrate.
  • the material layer is a material to be finally patterned, and may be, for example, a metal layer such as aluminum or copper, a semiconductor layer such as silicon, or an insulating layer such as silicon oxide, silicon nitride, or the like.
  • the material layer can be formed, for example, by chemical vapor deposition.
  • the resist underlayer film composition may be prepared in a solution form and applied by a spin-on-coating method.
  • the coating thickness of the resist underlayer film composition is not particularly limited, but may be applied, for example, to about 80 kPa to 10,000 kPa thickness.
  • the heat treatment of the resist underlayer film composition may be performed at, for example, about 150 kPa to 500 ° C.
  • the polymer may be crosslinked.
  • Exposing the photoresist layer may be performed using, for example, ArF, KrF or EUV. After exposure, the process may be performed at about " 100 " to 500 < 0 > C.
  • the resist underlayer film has a high thickness uniformity over the entire surface, and a thickness variation is within ⁇ 5%.
  • the thickness deviation refers to the rate of change of the surface thickness to the total thickness.
  • Etching the exposed portion of the material layer may be performed by dry etching using an etching gas, which may use, for example, CHF 3 , CF 4 , Cl 2 , BCl 3 and mixtures thereof.
  • an etching gas which may use, for example, CHF 3 , CF 4 , Cl 2 , BCl 3 and mixtures thereof.
  • the etched material layer may be formed in a plurality of patterns, and the plurality of patterns may be a metal pattern, a semiconductor pattern, an insulation pattern, or the like, and may be applied in various patterns in a semiconductor integrated circuit device.
  • the yield was 89%, the weight average molecular weight (Mw) of the obtained polymer was 7,300, and dispersion degree (Mw / Mn) was # 1.90 GPa.
  • 1,1,1,1,3,3,3-hexafluoro isopropyl methacrylate (1,1,1 instead of 2-methyl-acrylic acid 2,3,5,6-tetrafluoro-4-hydroxybenzyl ester
  • a polymer represented by the following Chemical Formula 2B was obtained in the same manner as in Synthesis Example 1 except for using 3,3,3-hexafluoro isopropyl methacrylate.
  • the yield was 88%, the weight average molecular weight (Mw) of the obtained polymer was 6,800 and dispersion degree (Mw / Mn) was # 1.88.
  • the yield was 90%, the weight average molecular weight (Mw) of the obtained polymer was 7,100 and dispersion degree (Mw / Mn) was # 1.92.
  • the yield was 90%, the weight average molecular weight (Mw) of the obtained polymer was 6,900 and dispersion degree (Mw / Mn) was # 1.83.
  • a crosslinking agent having a structure of Formula A as follows: PD1174, manufactured by TCI, and pyridinium p-toluenesulfonate having the following structure as an acid catalyst (pyridinium p-toluenesulfonate, pPTS) 0.0125g) was dissolved in 100g of propylene glycol monomethyl ether acetate (PGMEA) and filtered to prepare a composition for resist underlayer film.
  • PGMEA propylene glycol monomethyl ether acetate
  • a composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 2 was used instead of the polymer obtained in Synthesis Example 1.
  • a composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 3 was used instead of the polymer obtained in Synthesis Example 1.
  • composition for resist underlayer films according to Examples 1 to 3 and Comparative Example After applying the composition for resist underlayer films according to Examples 1 to 3 and Comparative Example on a silicon substrate by spin-on coating method, and heat treatment at 205 °C for 60 seconds on a hot plate to form a resist underlayer film of about 100 GPa thick.
  • the contact angle was measured using a contact angle measuring instrument, and the thickness uniformity was measured three times using K-MAC Co., Ltd., a thin film thickness measuring instrument, and the thickness deviation was calculated from the results.
  • the resist underlayer film formed using the resist underlayer film composition according to Examples 1 to 3 had a higher thickness uniformity than the resist underlayer film formed using the resist underlayer film composition according to the comparative example, and about ⁇ 5. It can be seen that there is a thickness deviation within%.
  • the contact angle is a factor capable of confirming the affinity between the resist underlayer film and the photoresist applied to the upper layer, and the resist underlayer film formed by using the resist underlayer film composition according to Examples 1 to 3 and Comparative Examples are all It can be seen that the contact angles are similar to each other at about 70 °. It can be seen from Examples 1 to 3 that the affinity with the photoresist is similar to that of the comparative example and the thickness uniformity of the resist underlayer film is excellent.
  • the resist underlayer film formed using the resist underlayer film composition according to Examples 1 to 3 can be improved in adhesion with the photoresist layer located thereon.
  • composition for resist underlayer films according to Examples 1 to 3 and Comparative Example After applying the composition for resist underlayer films according to Examples 1 to 3 and Comparative Example on a silicon substrate by spin-on coating method, and heat treatment at 205 °C for 60 seconds on a hot plate to form a resist underlayer film of about 100 GPa thick.
  • a photoresist solution was applied on the resist underlayer by spin-on coating, and then heat-treated at 110 ° C. for 1 minute on a hot plate to form a photoresist layer having a thickness of about 60 nm.
  • the photoresist layer was exposed to an acceleration voltage of 100 keV using an e-beam exposure machine (manufactured by Elionix, Inc.), and then heat-treated at 110 ° C. for 60 seconds.
  • the photoresist layer was then developed with a 2.38wt% aqueous tetramethylammonium hydroxide (TMAH) solution and then rinsed in pure water for 15 seconds to form a photoresist pattern, i.e. a line & space pattern with 40 nm resolution. .
  • TMAH aqueous tetramethylammonium hydroxide
  • the resolution was measured using an electron scanning microscope (SEM) S-9260 (manufactured by Hitachi, Inc.), and the collapse of the photoresist pattern was observed by an electron scanning microscope (SEM) in case of good X and in case of poor (pattern collapse). It is marked with ⁇ .
  • SEM electron scanning microscope

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)

Abstract

La présente invention concerne un polymère ayant une fraction répondant à la formule I, une composition de film de sous-couche de réserve comprenant un solvant et un procédé de formation d'un motif à l'aide de ladite composition de film de sous-couche de réserve.
PCT/KR2013/000179 2012-10-30 2013-01-09 Composition de film de sous-couche de réserve et procédé de formation de motif à l'aide de ladite composition de film de sous-couche de réserve WO2014069718A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120121317A KR20140055050A (ko) 2012-10-30 2012-10-30 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
KR10-2012-0121317 2012-10-30

Publications (1)

Publication Number Publication Date
WO2014069718A1 true WO2014069718A1 (fr) 2014-05-08

Family

ID=50627601

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/000179 WO2014069718A1 (fr) 2012-10-30 2013-01-09 Composition de film de sous-couche de réserve et procédé de formation de motif à l'aide de ladite composition de film de sous-couche de réserve

Country Status (2)

Country Link
KR (1) KR20140055050A (fr)
WO (1) WO2014069718A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102047538B1 (ko) 2017-02-03 2019-11-21 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102067081B1 (ko) 2017-11-01 2020-01-16 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020005950A (ko) * 2000-07-11 2002-01-18 윤종용 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물
JP2003107709A (ja) * 2001-09-28 2003-04-09 Fuji Photo Film Co Ltd ポジ型レジスト組成物
KR20030079907A (ko) * 2000-07-12 2003-10-10 미츠비시 레이온 가부시키가이샤 레지스트용 수지 및 화학 증폭형 레지스트 조성물
KR20110139118A (ko) * 2010-06-21 2011-12-28 신에쓰 가가꾸 고교 가부시끼가이샤 나프탈렌 유도체, 레지스트 하층막 재료, 레지스트 하층막 형성 방법 및 패턴 형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020005950A (ko) * 2000-07-11 2002-01-18 윤종용 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물
KR20030079907A (ko) * 2000-07-12 2003-10-10 미츠비시 레이온 가부시키가이샤 레지스트용 수지 및 화학 증폭형 레지스트 조성물
JP2003107709A (ja) * 2001-09-28 2003-04-09 Fuji Photo Film Co Ltd ポジ型レジスト組成物
KR20110139118A (ko) * 2010-06-21 2011-12-28 신에쓰 가가꾸 고교 가부시끼가이샤 나프탈렌 유도체, 레지스트 하층막 재료, 레지스트 하층막 형성 방법 및 패턴 형성 방법

Also Published As

Publication number Publication date
KR20140055050A (ko) 2014-05-09

Similar Documents

Publication Publication Date Title
WO2018199419A1 (fr) Composition de sous-couche de réserve et procédé de formation de motifs à l'aide de ladite composition de sous-couche de réserve
WO2013100365A1 (fr) Monomère pour une composition de masque dur, composition de masque dur comprenant le monomère et procédé de formation de motif à l'aide de la composition de masque dur
WO2014065500A1 (fr) Composition de masque dur et procédé de formation de motif l'utilisant
WO2014157881A1 (fr) Composition de sous-couche de réserve et procédé pour la formation de motif l'utilisant
WO2013100409A1 (fr) Monomère pour une composition de masque dur, composition de masque dur comprenant le monomère, et procédé permettant de former un motif à l'aide de la composition de masque dur
WO2013066067A1 (fr) Monomère phénolique, polymère servant à former un film de sous-couche de réserve le contenant, et composition pour film de sous-couche de réserve le contenant
WO2014163332A1 (fr) Composition de revêtement pour former un micromotif, et procédé pour former un micromotif au moyen de celle-ci
KR102067081B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
WO2018070785A1 (fr) Composition de masque dur à base de carbone à haute résistance à la gravure et procédé de formation de motifs l'utilisant
WO2013042973A2 (fr) Composition de photorésist à ligne i et procédé de formation de fin motif l'utilisant
WO2014104480A1 (fr) Monomère, composition de masque dur comprenant ledit monomère, et procédé permettant de former un motif à l'aide de ladite composition de masque dur
WO2019245172A1 (fr) Composition de résine photosensible positive amplifiée chimiquement servant à améliorer un profil de motif
WO2011081285A2 (fr) Polymère contenant un cycle aromatique pour une sous-couche de réserve, et composé de sous-couche de réserve comprenant le polymère
WO2020209527A1 (fr) Composition de masque dur très épais en carbone déposé par centrifugation et procédé de formation de motifs l'utilisant
WO2011081321A2 (fr) Composition pour la couche inférieure d'une résine, et procédé utilisant ladite composition pour la fabrication d'un dispositif à circuits intégrés à semi-conducteurs
WO2011081323A2 (fr) Composition pour la couche inférieure d'une photorésine, et procédé d'utilisation de ladite composition pour la fabrication d'un dispositif semi-conducteur
WO2017039235A1 (fr) Composition de résine photosensible négative « i-line » ayant une excellente résistance à la gravure
KR20130079150A (ko) 시아누릭산 유도체, 상기 시아누릭산 유도체를 포함하는 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
WO2019022394A1 (fr) Nouveau polymère pour la formation d'un film de sous-couche de résine photosensible, composition pour la formation d'un film de sous-couche de résine photosensible le comprenant et procédé de fabrication d'élément semi-conducteur à l'aide de celui-ci
WO2010064829A2 (fr) Composition de sous-couche antireflet
WO2023195636A1 (fr) Composition de masque dur en carbone déposé par rotation ayant des performances de planarisation élevées et procédé de formation de motifs l'utilisant
WO2014069718A1 (fr) Composition de film de sous-couche de réserve et procédé de formation de motif à l'aide de ladite composition de film de sous-couche de réserve
WO2022245014A1 (fr) Composition de masque dur à base de carbone déposé par rotation qui présente une faible perte par évaporation, et procédé de formation de motif utilisant la composition
WO2019190065A1 (fr) Composition de masque dur et procédé de formation de motif l'utilisant
WO2012005418A1 (fr) Composé contenant un noyau aromatique pour une sous-couche de réserve, composition de sous-couche de réserve le contenant et procédé de formation de motif de dispositif au moyen de cette composition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13852256

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13852256

Country of ref document: EP

Kind code of ref document: A1