WO2014069718A1 - Composition for resist underlayer film, and method for forming pattern using said composition for resist underlayer film - Google Patents

Abstract

The present invention relates to a polymer having a moiety expressed by the following Formula I, a composition for a resist underlayer film including a solvent, and a method for forming a pattern using the composition for a resist underlayer film.

Description

The pattern formation method using the composition for resist underlayer films and the said composition for resist underlayer films

A pattern forming method using the composition for resist underlayer films and the composition for resist underlayer films.

Recently, the semiconductor industry has been developed from ultra-fine technology having a pattern of several hundred nanometers to several tens of nanometers. Effective lithographic techniques are essential to realizing this ultrafine technology.

A typical lithographic technique involves forming a material layer on a semiconductor substrate, coating a photoresist layer thereon, exposing and developing a photoresist pattern, and then etching the material layer using the photoresist pattern as a mask. do.

Recently, exposure light sources with short wavelengths, such as 248 nm, 193 nm and 13.5 nm, have been used, and it is difficult to form fine patterns with good profiles only with the typical lithographic techniques described above. Accordingly, a fine pattern may be formed by forming an underlayer called a resist underlayer between the material layer and the photoresist layer to be etched.

The resist underlayer film can be formed using a composition for resist underlayer films having high etching selectivity and sufficient resistance to multiple etching. 　

The resist underlayer film composition is important for determining exposure characteristics such as resolution, lithography speed and residue of the photoresist layer. In particular, the composition for the resist underlayer film also requires adhesion with the photoresist layer in order to prevent collapse of the micronized photoresist pattern positioned thereon.

One embodiment provides a composition for a resist underlayer film capable of improving adhesion with a photoresist layer.

Another embodiment provides a pattern forming method using the resist underlayer film composition.

According to one embodiment, there is provided a composition for a resist underlayer film comprising a polymer having a moiety represented by the following Chemical Formula 1, and a solvent.

[Formula 1]

In Chemical Formula 1,

R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C7 to C20 arylalkyl group, substituted or unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted amino group, halogen group, halogen-containing group or a combination thereof ego,

* Indicates the part linked to the polymer.

The polymer may be represented by the following formula (2).

[Formula 2]

In Chemical Formula 2,

R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof ,

R ³ to R ⁵ are each independently hydrogen or a methyl group,

R ⁶ to R ⁸ are different from each other, hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof ,

a≥0, b> 0, c≥0, d≥0,

at least one of a, c and d is not 0,

a + b + c + d = 1.

At least one of R ⁶ to R ⁸ is a C1 to C30 alkyl group substituted with a hydroxy group, a C3 to C30 cycloalkyl group substituted with a hydroxy group, a C6 to C30 aryl group substituted with a hydroxy group, a C7 to C20 arylalkyl group substituted with a hydroxy group, a hydroxyl group A C1 to C20 heteroalkyl group substituted with a C2 to C30 heterocycloalkyl group substituted with a hydroxy group, a C2 to C30 heteroaryl group substituted with a hydroxy group, or a combination thereof,

At least one of R ⁶ to R ⁸ is a halogen substituted C1 to C30 alkyl group, halogen substituted C3 to C30 cycloalkyl group, halogen substituted C6 to C30 aryl group, halogen substituted C7 to C20 arylalkyl group, halogen substituted C1 to C20 heteroalkyl group, halogen substituted C2 to C30 heterocycloalkyl group, halogen substituted C2 to C30 heteroaryl group, halogen group or a combination thereof.

B may satisfy 0.05 ≦ b ≦ 0.95.

The polymer may have a weight average molecular weight of about 1,000 to 100,000 g / mol.

The polymer may have a weight average molecular weight of about 3,000 to 30,000 g / mol.

The polymer may be included in an amount of about 0.3 kPa to 20 kPa with respect to 100 parts by weight of the solvent.

The polymer may be included in an amount of about 0.3 kPa to 10 kPa with respect to 100 parts by weight of the solvent.

The resist underlayer film coating composition may further include at least one of a surfactant, an acid catalyst, and a crosslinking agent.

The surfactant, the acid catalyst and the crosslinking agent may be included in an amount of 0.001 to 3 parts by weight, respectively, based on 100 parts by weight of the composition for resist underlayer film.

According to another embodiment, the step of providing a material layer on a substrate, applying the above-described composition for a resist underlayer film on the material layer, heat-treating the composition for the resist underlayer film to form a resist underlayer film, on the resist underlayer film Forming a photoresist layer, exposing and developing the photoresist layer to form a photoresist pattern, selectively removing the resist underlayer film using the photoresist pattern and exposing a portion of the material layer, And etching the exposed portion of the material layer.

Forming the resist underlayer film may be performed by a spin-on-coating method.

The resist underlayer film may have a thickness variation within about ± 5%.

Adhesion with the photoresist layer may be improved to prevent collapse of the photoresist pattern during the patterning process.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily practice. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Unless otherwise defined herein, "substituted" means that the hydrogen atom in the compound is a halogen atom (F, Br, Cl or I), hydroxy group, alkoxy group, nitro group, cyano group, amino group, azido group, amidino Group, hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or salt thereof, sulfonic acid group or salt thereof, phosphoric acid or salt thereof, C1 to C20 alkyl group, C2 to C20 alkenyl group, C2 to C2 C20 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C4 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to Substituted with a substituent selected from C15 cycloalkynyl group, C2 to C20 heterocycloalkyl group and combinations thereof.

In addition, unless otherwise defined herein, "hetero" means containing one to three hetero atoms selected from N, O, S and P.

Hereinafter, a composition for resist underlayer films according to one embodiment is described.

The resist underlayer film composition according to the embodiment includes a polymer having a moiety represented by the following Chemical Formula 1, and a solvent.

[Formula 1]

In Chemical Formula 1,

R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C7 to C20 arylalkyl group, substituted or unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted amino group, halogen group, halogen-containing group or a combination thereof ego,

* Indicates the part linked to the polymer.

The moiety represented by Chemical Formula 1 is a structure in which carbon of γ-butyrolactone is directly bonded to the main chain portion of the polymer, thereby increasing the density of the polymer and providing structural stability.

The part represented by Chemical Formula 1 may be formed by polymerizing a monomer represented by Chemical Formula 1a.

[Formula 1a]

In Formula 1a, R ¹ and R ² are as described above.

The polymer may be prepared by copolymerization of the monomer represented by Formula 1a with at least one photosensitive monomer. In this case, the polymer may have a portion obtained from the monomer represented by Formula 1a and a photosensitive portion obtained from the photosensitive monomer.

For example, when synthesizing a polymer from the monomer represented by Formula 1a and at least one selected from the first photosensitive monomer, the second photosensitive monomer, and the third photosensitive monomer, the polymer may be represented by the following Formula 2.

[Formula 2]

In Chemical Formula 2,

R ¹ and R ² are as described above.

R ³ to R ⁵ are each independently hydrogen or a methyl group,

R ⁶ to R ⁸ are different from each other, hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof .

Wherein at least one of R ⁶ to R ⁸ is a C1 to C30 alkyl group substituted with a hydroxy group, a C3 to C30 cycloalkyl group substituted with a hydroxy group, a C6 to C30 aryl group substituted with a hydroxy group, a C7 to C20 arylalkyl group substituted with a hydroxy group, Or a C1 to C20 heteroalkyl group substituted with a hydroxy group, a C2 to C30 heterocycloalkyl group substituted with a hydroxy group, a C2 to C30 heteroaryl group substituted with a hydroxy group, or a combination thereof. By having a group substituted with the hydroxyl group as mentioned above, the crosslinking force can be improved at the time of forming a resist underlayer film.

At least one of R ⁶ to R ⁸ is a halogen substituted C1 to C30 alkyl group, halogen substituted C3 to C30 cycloalkyl group, halogen substituted C6 to C30 aryl group, halogen substituted C7 to C20 arylalkyl group, halogen substituted C1 to C20 heteroalkyl group, halogen substituted C2 to C30 heterocycloalkyl group, halogen substituted C2 to C30 heteroaryl group, halogen group or a combination thereof. By having a halogen-substituted group as mentioned above, the film density of a resist underlayer film can be improved.

A, b, c and d are the mole fractions of each repeating unit. Where a ≧ 0, b> 0, c ≧ 0, d ≧ 0 and a + b + c + d = 1, and at least one of a, c and d is not zero.

At this time, the mole fraction (b) of the part represented by Chemical Formula 1 may be about 0.05 kPa to 0.95 kPa.

By having the said range, adhesiveness with a photoresist layer can be improved, ensuring the photosensitivity of the resist underlayer film formed from the said composition for resist underlayer films.

The polymer may have a weight average molecular weight of about 1,000 to 100,000 g / mol. Within this range, the polymer may have a weight average molecular weight of about 3,000 to 30,000 g / mol. By having the weight average molecular weight of the said range, the solubility and coating property of the composition for resist underlayer films can be ensured.

The solvent is not particularly limited as long as it has sufficient solubility or dispersibility in the polymer, for example, propylene glycol, propylene glycol diacetate, methoxy propanediol, diethylene glycol, diethylene glycol butyl ether, tri (ethylene glycol) mono At least one selected from methyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone (or 'anone'), ethyl lactate, gamma-butyrolactone, and acetyl acetone. have.

The polymer may be included in an amount of about 0.3 kPa to 20 kPa with respect to 100 parts by weight of the solvent. Within this range, the polymer may be included in an amount of about 0.3 kPa to 10 parts by weight based on 100 parts by weight of the solvent. Since the polymer is included in the above range, the solubility of the polymer and the coatability at the time of forming the resist underlayer film may be improved.

The resist underlayer film composition may further include at least one of a surfactant, an acid catalyst, and a crosslinking agent.

The surfactant may be, for example, alkylbenzenesulfonic acid salt, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt and the like, but is not limited thereto.

The acid catalyst is preferably a heat activated acid catalyst.

As the acid catalyst, an organic acid such as p-toluene sulfonic acid monohydrate may be used, and a thermal acid generator (TAG) having storage stability may be used. The thermal acid generator is an acid generator that releases acid upon heat treatment, for example pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitro Benzyl tosylate, alkyl esters of euphonic acid, and the like.

The crosslinking agent may crosslink the repeating unit of the polymer by heating, and may include an amino resin such as an etherified amino resin; Glycoluril compounds such as compounds represented by the following formula (A); Bisepoxy compounds, such as a compound represented by following formula (B); Melamine or derivatives thereof such as N-methoxymethyl melamine, N-butoxymethyl melamine or melamine derivatives represented by the following general formula (C); Or mixtures thereof.

[Formula A]

[Formula B]

[Formula C]

The surfactant, the acid catalyst and the crosslinking agent may be included in an amount of about 0.001 to 3 parts by weight based on 100 parts by weight of the resist underlayer film composition. By including in the said range, solubility and crosslinkability can be ensured without affecting the optical characteristic of the composition for resist underlayer films.

As described above, the resist underlayer film composition includes a polymer having a structure in which carbon of γ-butyrolactone is directly bonded to a portion represented by Chemical Formula 1, that is, a main chain portion of the polymer. Accordingly, the resist underlayer film formed from the composition for resist underlayer film may be a high density thin film having a high uniformity in thickness, and thus adhesion with a photoresist layer positioned on the resist underlayer film may be improved.

Hereinafter, the method of forming a pattern using the composition for resist underlayer films mentioned above is demonstrated.

According to one or more exemplary embodiments, there is provided a method of forming a material layer on a substrate, applying a composition for forming a resist underlayer film including the polymer and a solvent on the material layer, and heat treating the composition for forming a resist underlayer film to form a resist underlayer film. Forming a photoresist layer on the resist underlayer film, exposing and developing the photoresist layer to form a photoresist pattern, selectively removing the resist underlayer film using the photoresist pattern, and Exposing a portion of the material layer, and etching the exposed portion of the material layer.

The substrate may be, for example, a silicon wafer, a glass substrate or a polymer substrate.

The material layer is a material to be finally patterned, and may be, for example, a metal layer such as aluminum or copper, a semiconductor layer such as silicon, or an insulating layer such as silicon oxide, silicon nitride, or the like. The material layer can be formed, for example, by chemical vapor deposition.

The resist underlayer film composition may be prepared in a solution form and applied by a spin-on-coating method. At this time, the coating thickness of the resist underlayer film composition is not particularly limited, but may be applied, for example, to about 80 kPa to 10,000 kPa thickness.

The heat treatment of the resist underlayer film composition may be performed at, for example, about 150 kPa to 500 ° C. In the heat treatment step, the polymer may be crosslinked.

Exposing the photoresist layer may be performed using, for example, ArF, KrF or EUV. After exposure, the process may be performed at about " 100 " to 500 < 0 > C.

The resist underlayer film has a high thickness uniformity over the entire surface, and a thickness variation is within ± 5%. Here, the thickness deviation refers to the rate of change of the surface thickness to the total thickness. As such, the uniformity of the thickness of the resist underlayer film over the entire surface can improve the adhesion with the photoresist layer formed thereon.

Etching the exposed portion of the material layer may be performed by dry etching using an etching gas, which may use, for example, CHF ₃ , CF ₄ , Cl ₂ , BCl ₃ and mixtures thereof.

The etched material layer may be formed in a plurality of patterns, and the plurality of patterns may be a metal pattern, a semiconductor pattern, an insulation pattern, or the like, and may be applied in various patterns in a semiconductor integrated circuit device.

Through the following examples will be described in more detail the embodiment of the present invention. However, the following examples are merely for illustrative purposes and do not limit the scope of the present invention.

Synthesis of Polymer

Synthesis Example 1

27 mmol of α-methylene-γ-butyrolactone, 27 mmol of 4-hydroxyphenyl ester methacrylic acid, and hydroxyisopropyl methacryl in a flask under nitrogen atmosphere Hydroxyisopropyl methacrylate 36mmol and 2-methyl acrylic acid 2,3,5,6-tetrafluoro-4-hydroxybenzyl ester 10 mmol) was added and mixed in methyl ethyl ketone twice the total amount of the monomers. Subsequently, 10 mmol of dimethyl-2,2'-azobis (2-methylpropionate) (V601, manufactured by Wako Chemicals) was added to the mixture and polymerized at a temperature of 80 ° C. for about 4 hours.

After the polymerization was completed, the obtained polymer was slowly precipitated in an excess of hexane solvent, and the obtained precipitate was dried in a vacuum oven to obtain a polymer represented by the following Chemical Formula 2A.

[Formula 2A]

(a = 0.27, b = 0.27, c = 0.36, d = 0.10)

The yield was 89%, the weight average molecular weight (Mw) of the obtained polymer was 7,300, and dispersion degree (Mw / Mn) was # 1.90 GPa.

Synthesis Example 2

1,1,1,1,3,3,3-hexafluoro isopropyl methacrylate (1,1,1 instead of 2-methyl-acrylic acid 2,3,5,6-tetrafluoro-4-hydroxybenzyl ester A polymer represented by the following Chemical Formula 2B was obtained in the same manner as in Synthesis Example 1 except for using 3,3,3-hexafluoro isopropyl methacrylate.

[Formula 2B]

(a = 0.27, b = 0.27, c = 0.36, d = 0.10)

The yield was 88%, the weight average molecular weight (Mw) of the obtained polymer was 6,800 and dispersion degree (Mw / Mn) was # 1.88.

Synthesis Example 3

Except for using 2-methyl-acrylic acid pentafluorophenyl ester instead of 2-methyl-acrylic acid 2,3,5,6-tetrafluoro-4-hydroxybenzyl ester In the same manner as in Synthesis Example 1, a polymer represented by the following formula (2C) was obtained.

[Formula 2C]

(a = 0.27, b = 0.27, c = 0.36, d = 0.10)

The yield was 90%, the weight average molecular weight (Mw) of the obtained polymer was 7,100 and dispersion degree (Mw / Mn) was # 1.92.

Comparative Synthesis Example

In the same manner as in Synthesis Example 3, except that γ-butyrolactonyl methacrylate (GBLMA) was used instead of α-methylene-γ-butyrolactone. A polymer represented by the formula (2D) was obtained.

[Formula 2D]

(a = 0.27, b = 0.27, c = 0.36, d = 0.10)

The yield was 90%, the weight average molecular weight (Mw) of the obtained polymer was 6,900 and dispersion degree (Mw / Mn) was # 1.83.

Preparation of resist underlayer film composition

Example 1

0.5 g of the polymer obtained in Synthesis Example 1, 0.125 g of a crosslinking agent having a structure of Formula A as follows: PD1174, manufactured by TCI, and pyridinium p-toluenesulfonate having the following structure as an acid catalyst (pyridinium p-toluenesulfonate, pPTS) 0.0125g) was dissolved in 100g of propylene glycol monomethyl ether acetate (PGMEA) and filtered to prepare a composition for resist underlayer film.

Example 2

A composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 2 was used instead of the polymer obtained in Synthesis Example 1.

Example 3

A composition for a resist underlayer film was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 3 was used instead of the polymer obtained in Synthesis Example 1.

Comparative example

0.5 g of the polymer obtained in the Comparative Synthesis Example, 0.125 g of a crosslinking agent (PD1174) having a structure of Formula A, and 0.0125 g of pyridinium p-toluenesulfonate (pPTS) with an acid catalyst were used as propylene glycol monomethyl ether acetate (PGMEA). ) Dissolved in 100 g and filtered to prepare a composition for a resist underlayer film.

Rating-1

After applying the composition for resist underlayer films according to Examples 1 to 3 and Comparative Example on a silicon substrate by spin-on coating method, and heat treatment at 205 ℃ for 60 seconds on a hot plate to form a resist underlayer film of about 100 GPa thick.

Next, the contact angle and thickness uniformity of the resist underlayer film were measured.

The contact angle was measured using a contact angle measuring instrument, and the thickness uniformity was measured three times using K-MAC Co., Ltd., a thin film thickness measuring instrument, and the thickness deviation was calculated from the results.

The results are shown in Table 1.

Table 1

	Contact angle (°)	Thickness uniformity	Thickness deviation (%)
Example 1	70	103.4 ± 3.3	± 3.19
Example 2	69	100.7 ± 2.9	± 2.88
Example 3	73	99.8 ± 4.2	± 4.21
Comparative example	68	101.9 ± 8.7	± 8.54

Referring to Table 1, the resist underlayer film formed using the resist underlayer film composition according to Examples 1 to 3 had a higher thickness uniformity than the resist underlayer film formed using the resist underlayer film composition according to the comparative example, and about ± 5. It can be seen that there is a thickness deviation within%.

In Table 1, the contact angle is a factor capable of confirming the affinity between the resist underlayer film and the photoresist applied to the upper layer, and the resist underlayer film formed by using the resist underlayer film composition according to Examples 1 to 3 and Comparative Examples are all It can be seen that the contact angles are similar to each other at about 70 °. It can be seen from Examples 1 to 3 that the affinity with the photoresist is similar to that of the comparative example and the thickness uniformity of the resist underlayer film is excellent.

From the thickness uniformity and the contact angle result, it can be seen that the resist underlayer film formed using the resist underlayer film composition according to Examples 1 to 3 can be improved in adhesion with the photoresist layer located thereon.

Rating-2

After applying the composition for resist underlayer films according to Examples 1 to 3 and Comparative Example on a silicon substrate by spin-on coating method, and heat treatment at 205 ℃ for 60 seconds on a hot plate to form a resist underlayer film of about 100 GPa thick.

Subsequently, a photoresist solution was applied on the resist underlayer by spin-on coating, and then heat-treated at 110 ° C. for 1 minute on a hot plate to form a photoresist layer having a thickness of about 60 nm. The photoresist layer was exposed to an acceleration voltage of 100 keV using an e-beam exposure machine (manufactured by Elionix, Inc.), and then heat-treated at 110 ° C. for 60 seconds. The photoresist layer was then developed with a 2.38wt% aqueous tetramethylammonium hydroxide (TMAH) solution and then rinsed in pure water for 15 seconds to form a photoresist pattern, i.e. a line & space pattern with 40 nm resolution. .

The resolution and pattern collapse of the photoresist pattern were confirmed.

The resolution was measured using an electron scanning microscope (SEM) S-9260 (manufactured by Hitachi, Inc.), and the collapse of the photoresist pattern was observed by an electron scanning microscope (SEM) in case of good X and in case of poor (pattern collapse). It is marked with ○.

The results are shown in Table 2.

TABLE 2

	Resolution (nm)	Pattern collapse occurs
Example 1	39.8	X
Example 2	39.2	X
Example 3	40.5	X
Comparative example	41.3	○

Referring to Table 2, it was confirmed that the pattern formed using the resist underlayer film composition according to Examples 1 to 3 was improved in resolution and formed in a good pattern compared to the pattern formed using the resist underlayer film composition according to the comparative example. Can be.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

Claims (13)

1. A polymer having a moiety represented by the following formula (1), and

   menstruum

   A composition for resist underlayer film comprising a.

   [Formula 1]

   

   In Chemical Formula 1,

   R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C7 to C20 arylalkyl group, substituted or unsubstituted C1 to C20 heteroalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted amino group, halogen group, halogen containing group or a combination thereof ego,

   * Indicates the part linked to the polymer.
2. In claim 1,

   The polymer is a composition for a resist underlayer film represented by the following formula (2).

   [Formula 2]

   

   In Chemical Formula 2,

   R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof ,

   R ³ to R ⁵ are each independently hydrogen or a methyl group,

   R ⁶ to R ⁸ are different from each other, hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to A C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a halogen group, a halogen containing group or a combination thereof ,

   a≥0, b> 0, c≥0, d≥0,

   at least one of a, c and d is not 0,

   a + b + c + d = 1.
3. In claim 2,

   At least one of R ⁶ to R ⁸ is a C1 to C30 alkyl group substituted with a hydroxy group, a C3 to C30 cycloalkyl group substituted with a hydroxy group, a C6 to C30 aryl group substituted with a hydroxy group, a C7 to C20 arylalkyl group substituted with a hydroxy group, a hydroxyl group A C1 to C20 heteroalkyl group substituted with a C2 to C30 heterocycloalkyl group substituted with a hydroxy group, a C2 to C30 heteroaryl group substituted with a hydroxy group, or a combination thereof,

   At least one of R ⁶ to R ⁸ is a halogen substituted C1 to C30 alkyl group, halogen substituted C3 to C30 cycloalkyl group, halogen substituted C6 to C30 aryl group, halogen substituted C7 to C20 arylalkyl group, halogen substituted C1 to C20 heteroalkyl group, halogen substituted C2 to C30 heterocycloalkyl group, halogen substituted C2 to C30 heteroaryl group, halogen group or a combination thereof

   A composition for resist underlayer film.
4. In claim 2,

   B is a composition for a resist underlayer film satisfying 0.05 ≦ b ≦ 0.95.
5. In claim 1,

   The polymer has a weight average molecular weight of 1,000 to 100,000 g / mol composition for resist underlayer film.
6. In claim 5,

   The polymer has a weight average molecular weight of 3,000 to 30,000 g / mol composition for resist underlayer film.
7. In claim 1,

   The polymer is a composition for a resist underlayer film contained in 0.3 to 20 parts by weight based on 100 parts by weight of the solvent.
8. In claim 7,

   The polymer is a resist underlayer film composition is contained in 0.3 to 10 Pa by weight based on 100 parts by weight of the solvent.
9. In claim 1,

   The composition for resist underlayer film is a composition for resist underlayer film further comprising at least one of a surfactant, an acid catalyst and a crosslinking agent.
10. In claim 9,

    The surfactant, acid catalyst and crosslinking agent are contained in an amount of 0.001 to 3 parts by weight, respectively, based on 100 parts by weight of the composition for resist underlayer film.
11. Providing a layer of material over the substrate,

    Applying a composition for resist underlayer film according to any one of claims 1 to 10 on the material layer;

    Heat-treating the composition for resist underlayer film to form a resist underlayer film,

    Forming a photoresist layer on the resist underlayer film,

    Exposing and developing the photoresist layer to form a photoresist pattern;

    Selectively removing the resist underlayer film using the photoresist pattern and exposing a portion of the material layer; and

    Etching the exposed portion of the material layer

    Pattern forming method comprising a.
12. In claim 11,

    The forming of the resist underlayer film is performed by a spin-on-coating method.
13. In claim 11,

    And the resist underlayer film has a thickness variation within ± 5%.