WO2014061738A1 - 荷電粒子線装置内の異物除去方法、及び荷電粒子線装置 - Google Patents
荷電粒子線装置内の異物除去方法、及び荷電粒子線装置 Download PDFInfo
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- WO2014061738A1 WO2014061738A1 PCT/JP2013/078186 JP2013078186W WO2014061738A1 WO 2014061738 A1 WO2014061738 A1 WO 2014061738A1 JP 2013078186 W JP2013078186 W JP 2013078186W WO 2014061738 A1 WO2014061738 A1 WO 2014061738A1
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- objective lens
- foreign matter
- charged particle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/028—Particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/14—Lenses magnetic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Definitions
- the present invention relates to a charged particle beam apparatus that irradiates a sample with a charged particle beam, and more particularly to a foreign particle removal method and a charged particle beam apparatus in a charged particle beam apparatus that can remove foreign substances present in a vacuum chamber.
- a charged particle beam device typified by a scanning electron microscope (CD-SEM: Critical Dimension Scanning Electron Microscope) for semiconductor wafer measurement uses signals (secondary electrons and reflected electrons) obtained by scanning a charged particle beam on a sample. ) On the basis of ().
- CD-SEM Critical Dimension Scanning Electron Microscope
- Semiconductor devices are being miniaturized to improve device performance and circuit performance. With the miniaturization of semiconductor devices, the demand for killer foreign substances allowed in semiconductor devices has become more severe. Specific examples of the foreign matter include contamination by the outgas of the semiconductor device itself, minute foreign matter brought into the semiconductor device, and dust generation from the CD-SEM sliding portion.
- the above foreign matter floats in the vacuum sample chamber or adheres to the stage, objective lens, sample chamber wall, or the like. If foreign matter adheres to the semiconductor device being measured, the yield may decrease, and management is necessary. At present, foreign matter is regularly measured, and when it is out of specification, the generated part is removed by ethanol cleaning.
- Patent Document 1 when the sample is detached from the lower part of the objective lens for focusing the electron beam, the excitation of the objective lens is turned off or low, or the electron beam is accelerated when passing through the objective lens. For this reason, there is disclosed a technique for effectively removing foreign substances while suppressing the adhesion of foreign substances to the sample by setting the applied voltage of the acceleration cylinder to Off or a low voltage.
- Patent No. 4945267 (corresponding US Pat. No. 7,626,166)
- Ethanol cleaning can remove foreign substances, but the sample chamber must be released to the atmosphere.Even if the vacuum chamber is evacuated after cleaning, foreign matter that has entered the atmosphere is reattached to the stage, objective lens, sample chamber wall, etc. There is a possibility of floating in the sample chamber in vacuum. Moreover, since several hours of downtime occurs due to atmospheric release and evacuation, frequent ethanol cleaning is not practical.
- the excitation of the objective lens is set to Off or low excitation, or the applied voltage of the acceleration cylinder for accelerating the electron beam when passing through the objective lens is set to Off or low voltage.
- the applied voltage of the acceleration cylinder for accelerating the electron beam when passing through the objective lens is set to Off or low voltage.
- One aspect for achieving the above object is an objective lens that focuses a charged particle beam emitted from a charged particle source, a control device that controls the lens intensity of the objective lens, and an object to be irradiated with the charged particle beam.
- a vacuum chamber for maintaining the atmosphere around the sample in a vacuum, and a stage on which the sample is arranged, or a foreign material recovery member for recovering foreign material in the vacuum chamber, the control device is configured such that the foreign material recovery member is the objective lens
- the foreign matter collecting member or the stage is moved so that the foreign matter collecting member or the stage is positioned under the beam passing opening of the objective lens so that the foreign matter collecting member or the stage is positioned under the beam passing opening of the objective lens.
- the foreign matter collecting member or the stage and the objective lens are formed so that a potential difference is formed between the stage and the objective lens. Suggest charged particle beam apparatus for applying electrodes to generate a potential difference, and / or a voltage pole between.
- Another aspect for achieving the above object is a method for removing foreign matter in a charged particle beam device that removes foreign matter in a vacuum chamber of the charged particle beam device, wherein the beam passes through an objective lens that focuses the charged particle beam.
- the foreign substance collection member or the stage for arranging the sample is moved so that the foreign substance collection member for collecting the foreign substance is positioned under the opening, and the foreign substance collection member is placed under the beam passage opening of the objective lens.
- a foreign matter removing method in a charged particle beam apparatus is proposed in which a potential difference is formed between the foreign matter collecting member or stage and the objective lens in a positioned state.
- the foreign matter can be detached from the objective lens or the like with the foreign matter collecting member positioned below the beam passage opening of the objective lens, the foreign matter can be attached to the sample or the foreign matter can be diffused in the vacuum chamber. It becomes possible to collect foreign substances while suppressing the possibility.
- summary of a scanning electron microscope. The flowchart which shows the collection and collection
- summary of the scanning electron microscope provided with the electrode which controls the electric field on a sample The figure which shows an example of the acceleration cylinder and objective lens for accelerating a beam. The figure which shows an example of the objective lens which used the accelerator for accelerating a beam for a part of magnetic pole.
- the flowchart which shows the process of collect
- the time chart which shows the time change of the voltage applied to the electrode around a sample.
- the electrode arranged around the objective lens before collecting the foreign matter, the electrode arranged around the objective lens generates an electric field that is higher than that of the normal use so that the magnetic field of the objective lens is higher than that of the normal use.
- the excitation current and / or the applied voltage are controlled so that both the magnetic field and the electric field are larger than those during normal use.
- the foreign matter attached or attracted to the periphery is forced to the foreign matter recovery member provided near the sample stage by forming a potential difference between the objective lens or the electrode placed around the objective lens and the electrode placed around the stage.
- the foreign matter can be removed while suppressing the possibility of the foreign matter adhering to the sample or scattering of the foreign matter.
- by periodically minimizing the potential difference between the maximum and the minimum it is possible to promote the detachment of the foreign matter adhering to the objective lens and the like and to improve the recovery efficiency.
- FIG. 1 is a schematic configuration diagram of a scanning electron microscope according to the present invention.
- An electron beam 103 extracted from the electron source 101 by the extraction electrode 102 and accelerated by an accelerating electrode (not shown) is focused by a condenser lens 104 which is a form of a focusing lens, and then is scanned on a sample 109 by a scanning deflector 105.
- a condenser lens 104 which is a form of a focusing lens
- the electron beam 103 is decelerated by a negative voltage applied to an electrode built in the sample stage 108 and is focused by the lens action of the objective lens 106 and irradiated onto the sample 109.
- secondary electrons and electrons 110 such as backscattered electrons are emitted from the irradiated portion.
- the emitted electrons 110 are accelerated in the direction of the electron source by an acceleration action based on a negative voltage applied to the sample, and collide with the conversion electrode 112 to generate secondary electrons 111.
- the secondary electrons 111 emitted from the conversion electrode 112 are captured by the detector 113, and the output of the detector 113 changes depending on the amount of captured secondary electrons.
- the luminance of a display device (not shown) changes. For example, in the case of forming a two-dimensional image, an image of the scanning region is formed by synchronizing the deflection signal to the scanning deflector 105 and the output of the detector 113.
- the scanning deflector 105 may be supplied with a deflection signal for moving the field of view in addition to a deflection signal for performing two-dimensional scanning within the field of view.
- This deflection by the deflection signal is also called image shift deflection, and enables movement of the field of view of the electron microscope without moving the sample by the sample stage.
- image shift deflection and scanning deflection are performed by a common deflector, but an image shift deflector and a scanning deflector may be provided separately.
- the control device 120 controls each component of the scanning electron microscope, and forms a pattern on the sample based on the function of forming an image based on detected electrons and the intensity distribution of detected electrons called a line profile. It has a function to measure the pattern width.
- the scanning electron microscope illustrated in FIG. 1 is provided with a pre-exhaust chamber 115 for pre-exhausting the sample atmosphere when a sample is introduced into the sample chamber 107 and a mini-en 117 for forming an air cleaning space. Further, vacuum valves 114 and 116 for performing vacuum sealing are provided between these spaces.
- a positive or negative voltage is applied to the electric field forming electrode 118 according to an instruction from the control device 120 to control the surface electric field of the sample 109.
- the electric field forming electrode 118 is used to form an electric field for pulling up electrons emitted from the sample 109 toward the electron source 101, or to form an electric field for repelling electrons having low energy.
- a foreign substance collection member 119 is provided on the sample stage 108. As illustrated in FIG. 3, the foreign material recovery member 119 is provided at a position other than the mounting position of the sample 109 on the sample stage 108.
- a method for collecting foreign matter in the scanning electron microscope having the above configuration will be described below.
- a scanning electron microscope will be described as an example.
- the present invention is not limited to this.
- the present invention can be applied to foreign particle recovery of other charged particle beam devices such as a focused ion beam using an ion beam as a probe. Is also possible.
- FIG. 2 is a flowchart showing a foreign matter collection and recovery process.
- the sample 109 is carried out from the sample chamber 107, and the vacuum valve 114 is closed (steps S201 and S202).
- the vacuum valve 114 is closed (steps S201 and S202).
- step S203 by forming a magnetic field that is higher than that for normal use of the objective lens and / or applying an electric field that is higher than that for normal use to the electrodes arranged around the objective lens, foreign objects existing in the sample chamber are removed from the objective lens and the objective. It adheres to or is drawn to the electrodes arranged around the lens. For example, a larger voltage is applied to the electric field forming electrode 118 than in the case of using it as an electron microscope.
- the excitation current of the objective lens is controlled to narrow down the beam, but in this example, a magnetic field etc. is generated for the purpose of collecting foreign matter, so that focusing conditions, etc.
- priority is given to the collection efficiency, and a larger electric field or magnetic field is formed as compared with the case where the apparatus is used as an electron microscope. That is, it is possible to increase the collection efficiency of foreign matters by applying a large voltage or supplying a large current as compared with the case of irradiating a beam.
- FIG. 5A and FIG. 5B are diagrams showing the position of the foreign matter 501 before and after collecting the foreign matter by forming a strong electric field or the like.
- the foreign matter 501 gathers on the objective lens 106 and the electric field forming electrode 118 by strong excitation of the objective lens 106 or application of a high voltage to the electric field forming electrode 118.
- the objective lens is attracted by metallic foreign matter, and the electrodes placed around the objective lens are attracted by electrically charged insulating and non-conductive foreign matter.
- step S204 the stage is moved so that the center of the optical axis is directly above a dedicated stand to which voltage can be applied (step S204).
- the sample stage 108 is moved so that the foreign matter collecting member 119 is positioned immediately below the passage opening through which the electron beam of the objective lens where the foreign matter is most concentrated passes.
- the magnetic field of the objective lens 109 is turned off or relatively weakly excited, and voltage is applied to the electrodes arranged around the objective lens.
- the electric field is formed by the above, and the foreign matter is forcibly dropped on the foreign matter collecting member 119.
- FIG. 5C is a diagram illustrating a state in which foreign matter has fallen on the foreign matter collecting member 119 by electric field control.
- a dedicated stand capable of applying a voltage by periodically setting the potential difference between the electrode arranged around the objective lens and the electrode arranged around the stage after turning off the magnetic field of the objective lens periodically.
- the foreign object is forcibly dropped.
- the reason why the magnetic field of the objective lens is cut is to suppress the foreign matter adhering to the objective lens from being weakened, and at the same time, preventing the foreign matter that has been forcibly dropped from reattaching to the objective lens.
- the potential difference When generating the potential difference between the electrode arranged around the objective lens and the electrode arranged around the stage, it is also possible to generate the potential difference with both voltages or one of the voltages. For example, if the voltage of the electrodes arranged around the objective lens is 5 kV and the voltage of the electrodes arranged around the stage is 0 kV, the potential difference is 5 kV. If the voltage of the electrodes arranged around the objective lens is 5 kV and the voltage of the electrodes arranged around the stage is ⁇ 5 kV, the potential difference is 10 kV. If the voltage of the electrodes arranged around the objective lens is 0 kV and the voltage of the electrodes arranged around the stage is ⁇ 5 kV, the potential difference is 5 kV. That is, the potential difference can be generated by various methods. However, in order to generate a high potential difference with only one of them, it is necessary to provide a large power source. Therefore, it is desirable to generate a higher potential difference between the two voltages.
- FIG. 13 is a time chart showing the time change of the voltage applied to each electrode when collecting foreign matter.
- Vb is a voltage applied to the electric field forming electrode 118
- Vr is a voltage applied to the retarding electrode built in the sample stage.
- Vb and Vr are changed synchronously, and the applied voltage is controlled so that the potential difference between both electrodes repeats maximum (
- Vb1 and Vr1 in FIG. 13 are the maximum values of the applied voltage when performing measurement and observation with an electron microscope. Thus, by applying a large voltage exceeding the voltage range used in the case of using as an electron microscope, it is possible to improve the certainty of falling of foreign matter.
- FIG. 6 is a diagram illustrating an example of a sample stage in which a retarding electrode 502 to which a retarding voltage is applied is incorporated.
- the retarding electrode 502 is an embodiment of the electrode arranged around the stage described above.
- an auxiliary power source 602 for generating a strong electric field is provided in addition to a normal retarding voltage power source 601.
- the foreign matter can be forcibly dropped by controlling the voltage applied to the retarding electrode 502 as well, but since the potential on the center side of the sample stage 108 is high when viewed from the foreign matter collection member 119, the foreign matter collection member 119 is used. There is a possibility that a potential gradient is formed around the, and the fallen foreign matter is deflected.
- the potential gradient as described above can be eliminated by switching the switch 603 by the control device 120 and setting the foreign matter collection member 119 itself to a high potential when collecting the foreign matter.
- FIG. 7 is a diagram showing an example in which an electric field forming electrode 702 is provided under the magnetic pole of the objective lens 106.
- 8 and 9 are diagrams for explaining in more detail an installation example of the electric field forming electrode 702.
- FIG. 8 is a diagram showing an example in which an acceleration cylinder 801 for accelerating an electron beam is installed inside the beam passage opening of the objective lens 106.
- the electric field control at the time of collecting the foreign matter can be performed by controlling the voltage applied to the electric field forming electrode 702 and / or the acceleration cylinder 801.
- FIG. 7 is a diagram showing an example in which an electric field forming electrode 702 is provided under the magnetic pole of the objective lens 106.
- 8 and 9 are diagrams for explaining in more detail an installation example of the electric field forming electrode 702.
- FIG. 8 is a diagram showing an example in which an acceleration cylinder 801 for accelerating an electron beam is installed inside the beam passage opening of the objective lens 106.
- the electric field control at the time of collecting the foreign matter can
- FIG. 9 is a diagram showing the structure of the objective lens that accelerates the electron beam by dividing the upper magnetic pole 901 and the lower magnetic pole 902 of the objective lens 106 and selectively applying a high voltage to the upper magnetic pole 901.
- the electric field may be controlled when collecting foreign matter by controlling the voltage applied to the upper magnetic pole 901 and / or the electric field forming electrode 702.
- an electrode for controlling the trajectory of the secondary electrons may be used as an electric field control electrode for collecting foreign matter.
- the electrodes arranged around the stage can be replaced with electrodes other than the retarding electrode 502 and the foreign material collecting member 119.
- FIG. FIG. 10 shows an example in which an electric field forming electrode 1003 is arranged on the bottom of a vacuum sample chamber 1002 of an electron microscope composed of an electron beam column 1001 and a vacuum sample chamber 1002.
- an electrode arranged at the bottom of the sample chamber is used, the distance from the electrode arranged around the objective lens becomes long, so that a larger voltage is required for the forced drop of foreign matter.
- the foreign matter can be recovered even with the retarding electrode and the electrode arranged on the bottom of the sample chamber, but it is necessary to dispose a dedicated base to which voltage can be applied on the upper surface of the electrode to be used.
- the foreign object that has been forcibly dropped may bounce off the upper surface of a dedicated table that can apply voltage, and then float again in the sample chamber. Dust collection efficiency is good when has a mesh structure.
- FIG. 4 is a view showing an example of the foreign matter collecting member 119.
- the foreign material recovery member 119 has a container shape and can accommodate and apply a small amount of vacuum grease. Further, a mesh electrode 401 is provided inside, and a voltage for performing electric field control at the time of collecting foreign matter can be applied.
- the foreign matter can be collected using a bare wafer on the stage or a foreign matter collecting member that can be introduced from the outside of the sample chamber without collecting the dust on a dedicated table to which voltage can be applied.
- FIG. 11 is a view showing an example in which a foreign material collecting member 1101 carried from the outside of the sample chamber is mounted on the sample stage 108. By applying a foreign matter collecting member having a large surface area, foreign matter collecting efficiency can be improved.
- FIG. 12 is a flowchart showing a foreign matter collecting process using the foreign matter collecting member 1101.
- the vacuum valve 114 is closed (steps S1201 and S1202).
- electric field control and / or magnetic field control for collecting foreign matter in the objective lens is performed (step S1203), while maintaining the state, the vacuum valve 114 is opened and the foreign matter collection member 1101 is introduced (step S1204, S1205).
- the vacuum valve 114 is closed, and the sample stage 108 is moved so that the foreign material recovery member 1101 is positioned under the beam passage opening of the objective lens (steps S1206 and S1207).
- the magnetic field of the objective lens 109 is turned off or relatively weakly excited, and voltage is applied to the electrodes arranged around the objective lens.
- an electric field is formed, and the foreign matter is forcibly dropped onto the foreign matter collection member 1101 (step S1208).
- the vacuum valve 114 is opened, and the foreign material recovery member 1101 is carried out (steps S1209 and S1210).
- the foreign matter By collecting the foreign matter through the process as shown in FIG. 12, the foreign matter can be removed efficiently without the foreign matter collecting member being resident in the sample chamber.
- the electric field control for collecting the foreign matter is performed while the foreign matter collecting member 1101 is placed on the sample stage 108, and the movable range of the foreign matter collecting member 1101 is scanned.
- the stage 108 By moving the stage 108, foreign matter removal processing can be performed over a wide range in the sample chamber.
- the product lot is automatically conveyed, and the CD-SEM can grasp the product lot waiting for processing. Therefore, dust collection is executed once after the product lot processing only when there is no product lot waiting to be processed.
- the number of lots to be processed may be small. In such a case, there is a high possibility that a clean atmosphere can be maintained in the sample chamber, and it is not necessary to collect dust for each processing lot. Therefore, it is desirable that a certain threshold can be set for the dust collection timing. For example, when one week has passed since the previous dust collection or the number of processed product lots exceeds 500 and there is no product lot waiting to be processed, the dust collection is performed once after the product lot processing. Furthermore, the apparatus activation and restart can be used as a dust collection trigger.
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Abstract
Description
102…引出電極
103…電子ビーム
104…コンデンサレンズ
105…走査偏向器
106…対物レンズ
107…試料室
108…試料ステージ
109…試料
120…制御装置
Claims (11)
- 荷電粒子源から放出される荷電粒子ビームを集束する対物レンズと、
当該対物レンズのレンズ強度を制御する制御装置と、
前記荷電粒子ビームの照射対象である試料周囲の雰囲気を真空に維持する真空室と、
前記試料が配置されるステージ、或いは真空室内に、異物を回収する異物回収部材とを備え、
前記制御装置は、当該異物回収部材が前記対物レンズのビーム通過開口下に位置付けられるように、前記異物回収部材、或いはステージを移動させ、前記異物回収部材が前記対物レンズのビーム通過開口下に位置付けられた状態で、当該異物回収部材と前記対物レンズ、或いは前記ステージと前記対物レンズとの間に電位差が形成されるように、前記異物回収部材若しくは前記ステージと対物レンズとの間に電位差を発生させる電極、及び/又は磁極に電圧を印加する荷電粒子線装置。 - 前記制御装置は、前記異物回収部材が前記対物レンズのビーム通過開口下に位置付けられた状態で、前記当該異物回収部材と前記対物レンズ、或いは前記ステージと前記対物レンズとの間の電位差を周期的に変化させることを特徴とする、請求項1に記載の荷電粒子線装置。
- 前記制御装置は、前記異物回収部材への印加電圧、前記ステージへの印加電圧、前記試料に対面する対面電極への印加電圧、或いは前記荷電粒子ビームを加速させる加速筒への印加電圧の少なくとも1つを制御することによって、前記電位差を発生させる、請求項1に記載の荷電粒子線装置。
- 前記制御装置は、前記電位差を形成する前に、前記対物レンズの励磁、及び/又は前記ステージと対物レンズとの間に電位差を発生させるための電極への電圧の印加を行う、請求項1に記載の荷電粒子線装置。
- 前記制御装置は、前記電位差を形成する前に、前記試料にビームを照射する場合と比較して大きな電流を前記対物レンズに供給することによる前記対物レンズの励磁を行う、請求項4に記載の荷電粒子線装置。
- 前記制御装置は、前記電位差を形成する前に、前記試料にビームを照射する場合と比較して大きな電圧を、前記ステージと対物レンズとの間に電位差を発生させるための電極、及び又は磁極に印加する、請求項4に記載の荷電粒子線装置。
- 前記異物回収部材は、前記ステージ、或いは前記真空室内に設置されている、請求項1に記載の荷電粒子線装置。
- 前記異物回収部材には真空グリスが塗布されている、請求項7に記載の荷電粒子線装置。
- 前記異物回収部材には、メッシュ状の電極が設けられている、請求項7に記載の荷電粒子線装置。
- 荷電粒子線装置の真空室内の異物を除去する荷電粒子線装置内の異物除去方法であって、
荷電粒子ビームを集束する対物レンズのビーム通過開口下に、異物を回収するための異物回収部材が位置付けられるように、当該異物回収部材、或いは試料が配置されるステージを移動し、
前記異物回収部材が前記対物レンズのビーム通過開口下に位置付けられた状態で、当該異物回収部材或いはステージと、前記対物レンズとの間に電位差を形成する、
荷電粒子線装置内の異物除去方法。 - 荷電粒子源から放出される荷電粒子ビームを集束する対物レンズと、
当該対物レンズのレンズ強度を制御する制御装置と、
前記荷電粒子ビームの照射対象である試料周囲の雰囲気を真空に維持する真空室と、
前記試料が配置されるステージ、或いは真空室内に、異物を回収する異物回収部材とを備え、
前記制御装置は、当該異物回収部材が前記対物レンズのビーム通過開口下に位置付けられるように、前記異物回収部材、或いはステージを移動させ、前記異物回収部材が前記対物レンズのビーム通過開口下に位置付けられた状態で、当該異物回収部材と前記対物レンズ、或いは前記ステージと前記対物レンズとの間に周期的に変化する電位差が形成されるように、前記異物回収部材、前記ステージと対物レンズとの間に電位差を発生させる電極、及び/又は磁極に電圧を印加する
荷電粒子線装置。
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KR1020157009048A KR101711897B1 (ko) | 2012-10-18 | 2013-10-17 | 하전 입자선 장치 내의 이물질 제거 방법 및 하전 입자선 장치 |
US14/433,886 US9368319B2 (en) | 2012-10-18 | 2013-10-17 | Method for removing foreign substances in charged particle beam device, and charged particle beam device |
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Cited By (2)
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CN108604523A (zh) * | 2016-02-01 | 2018-09-28 | 瓦里安半导体设备公司 | 离子束装置中污染控制的装置和方法 |
TWI740242B (zh) * | 2018-11-30 | 2021-09-21 | 日商日立全球先端科技股份有限公司 | 荷電粒子線裝置 |
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JP6093540B2 (ja) * | 2012-10-18 | 2017-03-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置内の異物除去方法、及び荷電粒子線装置 |
US10872742B2 (en) | 2016-11-24 | 2020-12-22 | Hitachi High-Tech Corporation | Charged particle beam device |
US10886101B2 (en) | 2017-03-29 | 2021-01-05 | Hitachi High-Tech Corporation | Charged particle beam device |
JP6814303B2 (ja) * | 2017-09-15 | 2021-01-13 | 株式会社日立ハイテク | イオンミリング装置 |
JP6892810B2 (ja) * | 2017-10-02 | 2021-06-23 | 富士通コンポーネント株式会社 | 電磁継電器 |
IL273836B2 (en) | 2017-10-31 | 2023-09-01 | Asml Netherlands Bv | A measuring device, a method for measuring a structure, a method for making a device |
JP7186230B2 (ja) | 2017-12-28 | 2022-12-08 | エーエスエムエル ネザーランズ ビー.ブイ. | 装置の構成要素から汚染粒子を除去する装置および方法 |
WO2021130805A1 (ja) * | 2019-12-23 | 2021-07-01 | 株式会社日立ハイテク | 荷電粒子線装置 |
EP4068331A1 (en) * | 2021-03-31 | 2022-10-05 | ASML Netherlands B.V. | Electron-optical system and method of operating an electron-optical system |
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TWI740242B (zh) * | 2018-11-30 | 2021-09-21 | 日商日立全球先端科技股份有限公司 | 荷電粒子線裝置 |
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US9368319B2 (en) | 2016-06-14 |
JP6093540B2 (ja) | 2017-03-08 |
KR20150053973A (ko) | 2015-05-19 |
US20150279609A1 (en) | 2015-10-01 |
JP2014082140A (ja) | 2014-05-08 |
KR101711897B1 (ko) | 2017-03-03 |
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